WO2019148599A1 - 一种量子点led、背光模块及显示装置 - Google Patents

一种量子点led、背光模块及显示装置 Download PDF

Info

Publication number
WO2019148599A1
WO2019148599A1 PCT/CN2018/078912 CN2018078912W WO2019148599A1 WO 2019148599 A1 WO2019148599 A1 WO 2019148599A1 CN 2018078912 W CN2018078912 W CN 2018078912W WO 2019148599 A1 WO2019148599 A1 WO 2019148599A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
fiber
layer
led
optical fiber
Prior art date
Application number
PCT/CN2018/078912
Other languages
English (en)
French (fr)
Inventor
樊勇
Original Assignee
惠州市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠州市华星光电技术有限公司 filed Critical 惠州市华星光电技术有限公司
Priority to US16/008,807 priority Critical patent/US10424701B2/en
Publication of WO2019148599A1 publication Critical patent/WO2019148599A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the present invention relates to the field of LED lighting technologies, and in particular, to a quantum dot LED, a backlight module, and a display device.
  • the quantum dot Due to the narrow luminescence peak, the quantum dot can be widely used in backlight products according to the size conditions. However, due to the exposure of quantum dots to water and oxygen, the fluorescence efficiency will be irreversibly and rapidly decreased.
  • the encapsulation of the quantum dots requires good isolation of water and oxygen.
  • the current quantum dot film is composed of PET with a barrier film.
  • the quantum dot diaphragm has stable optical properties and long service life, and the oxygen permeability of the barrier film needs to be ⁇ 10-1 cc/m ⁇ 2.day, and the water permeability is also required to reach ⁇ 10-1 g/m ⁇ 2.day.
  • the quantum dots are sensitive to temperature and the temperature rises, the quantum dot wavelength will be red-shifted, and the luminous efficiency will also decrease.
  • the conventional LED is shown in FIG. 1 , and the metal bracket 11 and the plastic bracket 12 are used.
  • the LED chip 13 is fixed on the metal bracket 11 and connected to the metal bracket 11 through the gold wire 14 , and the phosphor and the silica gel 15 are encapsulated in the metal by the sealing glue 16 .
  • the bracket 11 and the plastic bracket 12 are mounted. Since the oxygen permeability and the water permeability of the plastic support 12 and the encapsulating glue 16 do not meet the requirements of the quantum dot working environment, the thermal conductivity of the plastic support 12 and the encapsulation glue 16 is low, resulting in an increase in the temperature of the quantum dots, and the quantum dots. The luminous efficiency is lowered in the case of an increase in temperature.
  • the present invention provides a quantum dot LED, a backlight module, and a display device.
  • the invention provides a quantum dot LED, wherein the quantum dot comprises a bracket, an LED chip and at least one fiber layer and an encapsulation layer, wherein:
  • the LED chip is fixed on the bracket and connected to the bracket;
  • the fiber layer is disposed above the LED chip, and the fiber layer is composed of an optical fiber that encapsulates the quantum dots;
  • the encapsulation layer encapsulates the at least one fiber layer and the LED chip on the bracket.
  • the material of the optical fiber is silicon dioxide.
  • the fiber layers are stacked.
  • the optical fiber layer includes at least one optical fiber, the optical fiber is hermetically sealed with quantum dots, and the quantum dot material is a red quantum dot or a green quantum dot; each of the optical fibers is closed at both ends, and the quantum dots are in the optical fiber. Silicone material is provided outside.
  • a red quantum dot fiber is packaged and a green quantum dot fiber package is disposed.
  • the encapsulation layer is placed on the bracket to form a closed structure with the bracket, and the LED chip and the optical fiber layer are placed in the closed structure.
  • the quantum dot material includes CdS, CdSe, ZnS, ZnSe, InP, CuInS, CH3NH3PbBr3, and CSPbBr3.
  • the outer layer of the encapsulation layer is provided with a white reflector.
  • Another aspect of the present invention also provides a backlight module using a quantum dot LED as a backlight, the quantum dot LED comprising a bracket, an LED chip, and at least one fiber layer and an encapsulation layer; wherein:
  • the LED chip is fixed on the bracket and connected to the bracket;
  • the fiber layer is disposed above the LED chip, and the fiber layer is composed of an optical fiber that encapsulates the quantum dots;
  • the encapsulation layer encapsulates the at least one fiber layer and the LED chip on the bracket.
  • the material of the optical fiber is silicon dioxide.
  • the fiber layers are stacked.
  • the optical fiber layer includes at least one optical fiber, the optical fiber is sealed and encapsulated with quantum dots, and the quantum dot material is a red quantum dot or a green quantum dot; each of the optical fibers is closed at both ends, and a silica gel is disposed in the optical fiber. material.
  • a red quantum dot fiber is packaged and a green quantum dot fiber package is disposed.
  • a white reflector is disposed outside the encapsulation layer.
  • Still another aspect of the present invention provides a display device using a backlight module using a quantum dot LED as a backlight, the quantum dot LED including a bracket, an LED chip, and at least one fiber layer and Encapsulation layer, where:
  • the LED chip is fixed on the bracket and connected to the bracket;
  • the fiber layer is disposed above the LED chip, and the fiber layer is composed of an optical fiber that encapsulates the quantum dots;
  • the encapsulation layer encapsulates the at least one fiber layer and the LED chip on the bracket.
  • the material of the optical fiber is silicon dioxide.
  • the fiber layers are stacked.
  • the optical fiber layer includes at least one optical fiber, the optical fiber is sealed and encapsulated with quantum dots, and the quantum dot material is a red quantum dot or a green quantum dot; each of the optical fibers is closed at both ends, and a silica gel is disposed in the optical fiber. material.
  • a red quantum dot fiber is packaged and a green quantum dot fiber package is disposed.
  • a white reflector is disposed outside the encapsulation layer.
  • the invention provides a low oxygen permeability, a low water permeability and a high thermal conductivity environment for the quantum body by encapsulating the quantum body, so that the quantum body can ensure high luminous efficiency.
  • FIG. 1 is a structural diagram of a conventional LED package provided by the background art.
  • FIG. 2 is a schematic view showing the structure of a quantum dot LED provided by the present invention.
  • the core content of the patent is a fiber-optic encapsulated quantum dot using silicon dioxide to provide an environment with low oxygen permeability and low water permeability for quantum dots, and to ensure that the quantum dot temperature does not rise, affecting luminous efficiency, the following with reference to the accompanying drawings and embodiments The specific implementation of the system is further explained.
  • a quantum dot LED provided by an embodiment of the present invention includes a bracket 21, an LED chip 22 fixed on the bracket 21, an optical fiber layer 23, an encapsulation layer 24, and white reflective light. Cup 25.
  • the bracket 21 and the LED chip 22 fixed on the bracket 21 may be connected by a gold wire, or may be directly disposed on the bracket 21 and the LED chip 22 so that the two are directly connected; the bracket 21 may be a metal bracket or a ceramic. Bracket or other polymeric material holder.
  • a fiber layer 23 is disposed above the LED chip 22, and at least one fiber layer is disposed therein.
  • the fiber layers are stacked; each fiber layer includes at least one fiber 231, which is generally For multiple fibers, the purpose of using multiple fibers is to make the quantum dots more uniform in light distribution; the fibers 231 are tightly encapsulated with quantum dots 233, which may be red quantum dots or green quantum dots;
  • quantum dots 233 which may be red quantum dots or green quantum dots;
  • a silica gel 232 is disposed in the optical fiber 231, and the position of the quantum dot is fixed by heating the silica gel; in order to create an environment in which the oxygen barrier rate is high and the thermal conductivity is high,
  • the material of the fiber is made of silicon dioxide and is sealed at both ends of each fiber.
  • the material of the quantum dot 233 is optional, and includes one or more of CdS, CdSe, ZnS, ZnSe, InP, CuInS, CH3NH3PbBr3, and CSPbBr3.
  • a red quantum dot fiber is packaged and a green quantum dot fiber is packaged, and the purpose of the setting is also for high color purity of light.
  • the encapsulation layer 24 may be composed of glue, and the LED chip 22 and the optical fiber layer 23 are encapsulated on the bracket 21 by solidification of the glue.
  • the LED chip 22 and the optical fiber layer 23 may be packaged on the bracket 21 by other materials, as long as The fiber layer 23 is fixed, and the material capable of transmitting light is optional.
  • a white reflector cup 25 may be disposed on the side of the encapsulation layer 24 for better reflecting the white light to achieve better luminous efficiency of the quantum dot LED.
  • the backlight module uses the above-mentioned quantum dot LED as a backlight.
  • the quantum dot LED uses the above-mentioned quantum dot LED as a backlight.
  • a further embodiment of the present invention provides a display device using the backlight module.
  • the backlight module uses the quantum dot LED as a backlight.
  • quantum dot LED As a backlight.
  • the invention provides a low oxygen permeability, a low water permeability and a high thermal conductivity environment for the quantum body by performing optical fiber encapsulation on the quantum body, so that the quantum body can ensure high luminous efficiency.
  • the storage medium may be a magnetic disk, an optical disk, a read-only memory (ROM), or a random access memory (RAM).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Planar Illumination Modules (AREA)

Abstract

一种量子点LED、背光模块及显示装置，量子点LED包括支架（21）、LED芯片（22）和至少一层光纤层（23）以及封装层（24），LED芯片（22）固定在支架（21）上，且与支架（21）连接，光纤层（23）设置在LED芯片（22）上方，光纤层（23）由密闭封装量子点（233）的光纤（231）组成，封装层（24）将至少一层光纤层（23）和LED芯片（22）封装在支架（21）上。通过采用低透氧率、低透水率且高热导的二氧化硅光纤对量子点进行封装，保证了量子点的高发光效率。

Description

一种量子点LED、背光模块及显示装置
本申请要求于2018年1月31日提交中国专利局、申请号为201810094907.7、发明名称为“一种量子点LED、背光模块及显示装置”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及LED照明技术领域，尤其涉及一种量子点LED、背光模块及显示装置。
背景技术
量子点由于发光峰窄，发光波长可随尺寸条件，目前广泛应用于背光产品中。但由于量子点暴露在水氧环境下，荧光效率会存在不可逆的迅速下降，所目量子点的封装需要很好的隔绝水氧,目前的量子点膜片上下为具有阻隔膜的PET组成，为了使量子点膜片具有稳定的光学特性和使用寿命，需要阻隔膜的透氧能力达到<10-1cc/m^2.day,而透水能力也需要达到<10-1g/m^2.day。此外由于量子点对温度敏感，温度升高，量子点波长会产生红移，发光效率也会下降。
传统的LED如图1所示，采用金属支架11和塑料支架12，LED芯片13固定在金属支架11上且通过金线14与金属支架11连接，荧光粉和硅胶15用封装胶水16封装在金属支架11和塑料支架12上。由于塑料支架12和封装胶水16的透氧率和透水率都达不到量子点工作环境要求，另外塑料支架12和封装胶水16的热导系数较低，导致量子点温度升高，而量子点在温度升高的情况下发光效率会降低。
发明内容
为解决上述技术问题，本发明提供一种量子点LED、背光模块及显示装置。
本发明提供的一种量子点LED，上述量子点包括支架、LED芯片和至少一层光纤层以及封装层，其中：
所述LED芯片固定在所述支架上，且与所述支架连接；
所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
进一步地，所述光纤的材质为二氧化硅。
进一步地，所述光纤层层叠布置。
进一步地，所述光纤层包括至少一根光纤，所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内量子点外设置硅胶材料。
进一步地，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
进一步地，所述封装层置于所述支架上，与所述支架形成封闭结构，所述LED芯片与所述光纤层置于所述封闭结构内。
进一步地，所述量子点材料包括CdS、CdSe、ZnS、ZnSe、InP、CuInS、CH3NH3PbBr3和CSPbBr3。
进一步地，所述封装层外层设置有白色反光杯。
本发明的另一方面还提供一种背光模块，所述背光模块使用量子点LED作为背光源，所述量子点LED包括支架、LED芯片和至少一层光纤层以及封装层；其中：
所述LED芯片固定在所述支架上，且与所述支架连接；
所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
进一步地，所述光纤的材质为二氧化硅。
进一步地，所述光纤层层叠布置。
进一步地，所述光纤层包括至少一根光纤，所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内设置硅胶材料。
进一步地，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
进一步地，所述所述封装层外侧设置有白色反光杯。
本发明的再一方面还提供一种显示装置，所述显示装置使用背光模块，所述背光模块使用量子点LED作为背光源，所述量子点LED包括支架、LED芯片和至少一层光纤层以及封装层，其中：
所述LED芯片固定在所述支架上，且与所述支架连接；
所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
进一步地，所述光纤的材质为二氧化硅。
进一步地，所述光纤层层叠布置。
进一步地，所述光纤层包括至少一根光纤，所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内设置硅胶材料。
进一步地，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
进一步地，所述所述封装层外侧设置有白色反光杯。
实施本发明，具有如下有益效果：
本发明通过将量子体进行光纤封装，为量子体提供了低透氧率、低透水率且高热导的环境，使得量子体能够保证高的发光效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是背景技术提供的传统LED封装结构图。
图2是本发明提供的量子点LED结构示意图。
具体实施方式
本专利核心内容为采用二氧化硅的光纤封装量子点，为量子点提供透氧率和透水率低的环境，并且保证量子点温度不会升高，影响发光效率，以下结合附图和实施例对该系统具体实施方式做进一步说明。
下面将详细描述本发明提供的一种量子点LED、背光模块及显示装置的实施例。
在本发明一实施例中，如图2所示，本发明实施例提供的一种量子点LED，包括支架21、固定于支架21上面的LED芯片22、光纤层23、封装层24和白 色反光杯25。
其中，支架21与固定于支架21上面的LED芯片22可以采用金线进行连接，也可以直接在支架21和LED芯片22上设置触点，使得二者直接连接；支架21可以选用金属支架、陶瓷支架或者其他高分子材料支架。
在LED芯片22上方设置了光纤层23，在这里有至少一层光纤层，为达到更好的发光效果，光纤层层叠布置；每一光纤层至少包括至少一根光纤231，一般情况下会有多根光纤，使用多根光纤的目的是为了使量子点能够达到光分布更均匀的效果；光纤231密闭封装了量子点233，量子点233即可以是红色量子点，也可以是绿色量子点；为了使得量子点的位置固定，在光纤231内设置硅胶232，通过加热硅胶固化，固定了量子点的位置；为了给量子点营造隔水隔氧率很高，且同时热传导率很高的环境，光纤的材质采用二氧化硅，且对每一光纤两端进行封闭。
在本发明实施例中，量子点233的材料为可选的，包括CdS、CdSe、ZnS、ZnSe、InP、CuInS、CH3NH3PbBr3和CSPbBr3中一种或者多种。
进一步地，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置，这样的设置目的也是为了光线具有高色纯度。
封装层24可以由胶水组成，通过胶水的凝固把LED芯片22和光纤层23封装在支架21上，当然也可以通过其他材料将LED芯片22和光纤层23进行封装在支架21上，只要能够使光纤层23固定，同时还要能够透光的材料就是可选的。
为了达到更好的发光效果，可以选择在封装层24的侧面设置白色反光杯25，用于将白色的光更好的反射出去，达到量子点LED更好发光效率。
本发明另一实施例提供一种背光模块，所述背光模块使用上述量子点LED作为背光源，所述量子点LED的更多细节可参照前述对图2的描述，在此不进行赘述。
本发明又一实施例提供一种显示装置，所述显示装置使用上述背光模块，所述背光模块使用上述量子点LED作为背光源，所述量子点LED的更多细节可参照前述对图2的描述，在此不进行赘述。
实施本发明，具有如下有益效果：
本发明通过将量子体进行光纤封装，为量子体提供了低透氧率、低透水率 且高热导的环境，使得量子体能够保证高的发光效率。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的程序可存储于一计算机可读取存储介质中，该程序在执行时，可包括如上述各方法的实施例的流程。其中，所述的存储介质可为磁碟、光盘、只读存储记忆体(Read-Only Memory，ROM)或随机存储记忆体(Random Access Memory，RAM)等。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (20)

  1. 一种量子点LED，其中，所述量子点LED包括支架、LED芯片和至少一层光纤层以及封装层；其中：
    所述LED芯片固定在所述支架上，且与所述支架连接；
    所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
    所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
  2. 如权利要求1所述的量子点LED，其中，所述光纤的材质为二氧化硅。
  3. 如权利要求2所述的量子点LED，其中，所述光纤层层叠布置。
  4. 如权利要求2所述的量子点LED，其中，所述光纤层包括至少一根光纤，所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内设置硅胶材料。
  5. 如权利要求4所述的量子点LED，其中，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
  6. 如权利要求5所述的量子点LED，其中，所述封装层置于所述支架上，与所述支架形成封闭结构，所述LED芯片与所述光纤层置于所述封闭结构内。
  7. 如权利要求4所述的量子点LED，其中，所述量子点材料包括CdS、CdSe、ZnS、ZnSe、InP、CuInS、CH3NH3PbBr3和CSPbBr3中至少一种。
  8. 如权利要求1所述的量子点LED，其中，所述封装层外侧设置有白色反光杯。
  9. 一种背光模块，其中，所述背光模块使用量子点LED作为背光源，所述量子点LED包括支架、LED芯片和至少一层光纤层以及封装层；其中：
    所述LED芯片固定在所述支架上，且与所述支架连接；
    所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
    所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
  10. 如权利要求9所述的背光模块，其中，所述光纤的材质为二氧化硅。
  11. 如权利要求10所述的背光模块，其中，所述光纤层层叠布置。
  12. 如权利要求10所述的背光模块，其中，所述光纤层包括至少一根光纤， 所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内设置硅胶材料。
  13. 如权利要求12所述的背光模块，其中，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
  14. 如权利要求9所述的背光模块，其中，所述所述封装层外侧设置有白色反光杯。
  15. 一种显示装置，其中，所述显示装置使用背光模块，所述背光模块使用量子点LED作为背光源，所述量子点LED包括支架、LED芯片和至少一层光纤层以及封装层；其中：
    所述LED芯片固定在所述支架上，且与所述支架连接；
    所述光纤层设置在所述LED芯片上方，所述光纤层由密闭封装量子点的光纤组成；
    所述封装层将所述至少一层光纤层和所述LED芯片封装在所述支架上。
  16. 如权利要求15所述的显示装置，其中，所述光纤的材质为二氧化硅。
  17. 如权利要求16所述的显示装置，其中，所述光纤层层叠布置。
  18. 如权利要求16所述的显示装置，其中，所述光纤层包括至少一根光纤，所述光纤密闭封装有量子点，所述量子点材料为红色量子点或者绿色量子点；每一所述光纤两端封闭，在光纤内设置硅胶材料。
  19. 如权利要求18所述的显示装置，其中，在一层光纤层中，封装有红色量子点光纤和封装有绿色量子点光纤间隔设置。
  20. 如权利要求15所述的显示装置，其中，所述所述封装层外侧设置有白色反光杯。
PCT/CN2018/078912 2018-01-31 2018-03-14 一种量子点led、背光模块及显示装置 WO2019148599A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/008,807 US10424701B2 (en) 2018-01-31 2018-06-14 Quantum dot (QD) LEDs, backlight modules and displays

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810094907.7A CN108281530A (zh) 2018-01-31 2018-01-31 一种量子点led、背光模块及显示装置
CN201810094907.7 2018-01-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/008,807 Continuation US10424701B2 (en) 2018-01-31 2018-06-14 Quantum dot (QD) LEDs, backlight modules and displays

Publications (1)

Publication Number Publication Date
WO2019148599A1 true WO2019148599A1 (zh) 2019-08-08

Family

ID=62807134

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/078912 WO2019148599A1 (zh) 2018-01-31 2018-03-14 一种量子点led、背光模块及显示装置

Country Status (2)

Country Link
CN (1) CN108281530A (zh)
WO (1) WO2019148599A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112213881A (zh) * 2020-10-13 2021-01-12 南通创亿达新材料股份有限公司 一种量子点发光板及显示装置
CN113659058B (zh) * 2021-08-20 2023-10-20 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120050286A (ko) * 2010-11-10 2012-05-18 삼성엘이디 주식회사 양자점을 이용한 발광 소자 패키지
US20120236587A1 (en) * 2011-03-17 2012-09-20 Lg Electronics Inc. Mobile terminal and manufacturing method thereof
CN104062807A (zh) * 2014-07-15 2014-09-24 纳晶科技股份有限公司 发光单元及具有其的侧发光式液晶显示器
US20160067948A1 (en) * 2014-09-04 2016-03-10 Hon Hai Precision Industry Co., Ltd. Encapsulation structure and method for making same
CN105684555A (zh) * 2013-10-17 2016-06-15 株式会社村田制作所 纳米粒子材料以及发光器件
CN105739012A (zh) * 2016-02-18 2016-07-06 青岛海信电器股份有限公司 光传输结构
CN106129228A (zh) * 2016-07-06 2016-11-16 苏州星烁纳米科技有限公司 量子点封装体及其制备方法、发光装置和显示装置
CN106382474A (zh) * 2016-10-17 2017-02-08 纳晶科技股份有限公司 光致发光器件及具有其的发光器件
US20170176662A1 (en) * 2014-09-03 2017-06-22 Samsung Display Co., Ltd. Method of manufacturing liquid crystal display device
CN106960900A (zh) * 2017-03-15 2017-07-18 惠州市华瑞光源科技有限公司 量子点led封装结构
CN106981562A (zh) * 2017-03-30 2017-07-25 深圳市华星光电技术有限公司 量子点led封装结构
CN107561783A (zh) * 2017-10-25 2018-01-09 青岛海信电器股份有限公司 背光模组及液晶显示装置
CN107565003A (zh) * 2017-07-31 2018-01-09 深圳市华星光电技术有限公司 量子点led封装结构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106058015B (zh) * 2016-06-16 2019-02-26 青岛海信电器股份有限公司 量子点发光装置、背光模组及液晶显示装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120050286A (ko) * 2010-11-10 2012-05-18 삼성엘이디 주식회사 양자점을 이용한 발광 소자 패키지
US20120236587A1 (en) * 2011-03-17 2012-09-20 Lg Electronics Inc. Mobile terminal and manufacturing method thereof
CN105684555A (zh) * 2013-10-17 2016-06-15 株式会社村田制作所 纳米粒子材料以及发光器件
CN104062807A (zh) * 2014-07-15 2014-09-24 纳晶科技股份有限公司 发光单元及具有其的侧发光式液晶显示器
US20170176662A1 (en) * 2014-09-03 2017-06-22 Samsung Display Co., Ltd. Method of manufacturing liquid crystal display device
US20160067948A1 (en) * 2014-09-04 2016-03-10 Hon Hai Precision Industry Co., Ltd. Encapsulation structure and method for making same
CN105739012A (zh) * 2016-02-18 2016-07-06 青岛海信电器股份有限公司 光传输结构
CN106129228A (zh) * 2016-07-06 2016-11-16 苏州星烁纳米科技有限公司 量子点封装体及其制备方法、发光装置和显示装置
CN106382474A (zh) * 2016-10-17 2017-02-08 纳晶科技股份有限公司 光致发光器件及具有其的发光器件
CN106960900A (zh) * 2017-03-15 2017-07-18 惠州市华瑞光源科技有限公司 量子点led封装结构
CN106981562A (zh) * 2017-03-30 2017-07-25 深圳市华星光电技术有限公司 量子点led封装结构
CN107565003A (zh) * 2017-07-31 2018-01-09 深圳市华星光电技术有限公司 量子点led封装结构
CN107561783A (zh) * 2017-10-25 2018-01-09 青岛海信电器股份有限公司 背光模组及液晶显示装置

Also Published As

Publication number Publication date
CN108281530A (zh) 2018-07-13

Similar Documents

Publication Publication Date Title
CN208284498U (zh) 一种led器件、背光灯条和背光模组
US8039862B2 (en) White light emitting diode package having enhanced white lighting efficiency and method of making the same
WO2018040780A1 (zh) 一种量子点发光器件及背光模组
WO2016138693A1 (zh) 白光led、背光模块及液晶显示装置
CN206931619U (zh) 一种具有量子点封装体支架的高色域发光器件
CN106025037B (zh) 一种紫外发光二极管封装结构及其制作方法
CN107180908B (zh) 一种led、背光模组及液晶显示装置
CN106981562A (zh) 量子点led封装结构
WO2019148599A1 (zh) 一种量子点led、背光模块及显示装置
CN106773289A (zh) 一种量子点发光器件和背光模组以及液晶显示装置
WO2019140768A1 (zh) 一种背光源
CN107248547A (zh) 一种大功率led芯片集成封装结构及其封装方法
CN111081691A (zh) 一种实现多基色led光源的混光及光提取目的的模组结构
CN208284497U (zh) 一种led器件、背光灯条和背光模组
CN208521959U (zh) 一种具有卡接式双透镜的led封装结构
CN107561783B (zh) 背光模组及液晶显示装置
WO2019148601A1 (zh) 一种高导热量子点led
CN110645548A (zh) 一种光纤导光装置、系统
CN209087903U (zh) 一种led光源及其背光模组
CN207009476U (zh) 一种大功率led芯片集成封装结构
CN206353544U (zh) 一种cob光源
CN105870294B (zh) 一种高功率led的封装方法及封装结构
CN211957679U (zh) 一种超高ntsc色域led封装结构
US10424701B2 (en) Quantum dot (QD) LEDs, backlight modules and displays
CN202275866U (zh) 一种led光源的封装结构

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18903411

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17-11-2020)

122 Ep: pct application non-entry in european phase

Ref document number: 18903411

Country of ref document: EP

Kind code of ref document: A1