WO2019139337A1 - Carte mère, procédé de fabrication d'une cellule solaire à semi-conducteurs composite au moyen de ladite carte mère et cellule solaire à semi-conducteurs composite - Google Patents

Carte mère, procédé de fabrication d'une cellule solaire à semi-conducteurs composite au moyen de ladite carte mère et cellule solaire à semi-conducteurs composite Download PDF

Info

Publication number
WO2019139337A1
WO2019139337A1 PCT/KR2019/000302 KR2019000302W WO2019139337A1 WO 2019139337 A1 WO2019139337 A1 WO 2019139337A1 KR 2019000302 W KR2019000302 W KR 2019000302W WO 2019139337 A1 WO2019139337 A1 WO 2019139337A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
lattice constant
single crystal
crystal wafer
compound semiconductor
Prior art date
Application number
PCT/KR2019/000302
Other languages
English (en)
Korean (ko)
Inventor
김수현
권구한
김건호
이홍철
최원석
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2019139337A1 publication Critical patent/WO2019139337A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a mosquito board, a method of manufacturing a compound semiconductor solar cell using the mother board, and a compound semiconductor solar cell, and more particularly, to a mosquito board capable of producing a high efficiency compound semiconductor solar cell, A method of manufacturing a compound semiconductor solar cell, and a compound semiconductor solar cell.
  • the compound semiconductor is not a single element such as silicon or germanium, but two or more elements are combined to operate as a semiconductor.
  • various kinds of compound semiconductors have been developed and used in various fields. Typical examples of such compound semiconductors include light emitting devices such as light emitting diodes and laser diodes using solar cells, solar cells, and thermoelectric conversion devices using Peltier effect .
  • the compound semiconductor solar cell is composed of gallium arsenide (hereinafter referred to as GaAs), gallium indium phosphor (hereinafter referred to as GaInP), gallium aluminum arsenide (hereinafter referred to as GaAlAs), gallium indium arsenide II-VI compound semiconductors such as cadmium sulphide (CdS), cadmium tellurium (CdTe), zinc sulfide (ZnS), and the like; I-III-VI compound semiconductors typified by copper indium-selenium (CuInSe2) or the like are used to form various layers.
  • GaAs gallium arsenide
  • GaInP gallium indium phosphor
  • GaAlAs gallium aluminum arsenide
  • GaInS gallium indium arsenide II-VI compound semiconductors
  • CdS cadmium sulphide
  • CdTe cadmium tellurium
  • ZnS zinc sulfide
  • a compound semiconductor layer may be formed by a metal organic chemical vapor deposition (MOCVD) method, an MBE (Molecular Beam Epitaxy) method, or any other suitable method for forming an epitaxial layer.
  • MOCVD metal organic chemical vapor deposition
  • MBE Molecular Beam Epitaxy
  • the compound semiconductor layer formed on the mother substrate and formed on the mother substrate is formed as a single junction structure or a multiple junction structure.
  • the single-junction compound semiconductor layer is for forming a compound semiconductor solar cell having a single junction structure
  • the compound semiconductor solar cell having a single junction structure has one cell including a base layer and an emitter layer do.
  • the compound semiconductor layer of the multiple junction structure is for forming a compound semiconductor solar cell having a multi junction structure, and the compound semiconductor solar cell of the multiple junction structure comprises two or more cells including the base layer and the emitter layer.
  • a compound semiconductor solar cell having a double junction structure has a bottom cell and a top cell
  • a compound semiconductor solar cell having a junction structure of triple junction structure or more has a bottom cell and a top cell, And has at least one middle cell positioned therein.
  • the mother substrate for forming the compound semiconductor layer is formed of a GaAs single crystal wafer or a Ge single crystal wafer, and a GaAs single crystal wafer or a Ge single crystal wafer has a lattice constant of 5.65 angstroms.
  • the compound semiconductor layer formed on the mother substrate has the same lattice constant as the mother substrate.
  • the compound semiconductor layer forming the bottom cell located on the rear electrode side has a lower band gap energy than the compound semiconductor layer forming the top cell located on the front electrode side
  • the compound semiconductor layer forming the top cell is formed of a material having a higher band gap energy than the bottom cell, for example, GaInP.
  • the bottom cell when a compound semiconductor layer having a double junction structure is grown on a GaAs single crystal wafer or a Ge single crystal wafer having 5.65 angstroms, the bottom cell has a base layer formed on the basis of GaAs or Ge , The band gap energy of the bottom cell has a band gap energy of 1.42 eV which is equal to the band gap energy of the base layer of the bottom cell.
  • the band gap energy of the top cell must have a band gap energy of 1.88 eV which is equal to the band gap energy of the base layer of the top cell.
  • a mother substrate comprises a GaAs single crystal wafer or a Ge single crystal wafer; And a metamorphic layer in direct physical contact with one side of the GaAs single crystal wafer or the Ge single crystal wafer and having a lattice constant varying along the thickness direction.
  • the lattice constant of the first surface contacting the GaAs single crystal wafer or the Ge single crystal wafer is formed to be smaller than the lattice constant of the second surface located on the opposite side of the first surface from both surfaces of the modified layer,
  • the lattice constant of the first surface may increase stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the lattice constant on the first surface of the modified layer may be equal to the lattice constant of the GaAs single crystal wafer or the Ge single crystal wafer.
  • the GaAs single crystal wafer or the Ge single crystal wafer may have a lattice constant of 5.65 A and the modified layer may have a lattice constant of 5.70 A to 5.77 A larger than the lattice constant of the GaAs single crystal wafer or Ge single crystal wafer.
  • the modified layer having the above-mentioned lattice constant may be formed of In x Ga 1-x P or In x Ga 1 -x As, wherein x on the first surface is zero, X in the plane is 0.19.
  • x means atomic% (atomic%).
  • the mother substrate may further include a sacrificial layer in direct physical contact with the second surface of the modified layer.
  • the sacrificial layer may have the same lattice constant as the GaAs single crystal wafer or the Ge single crystal wafer or may have the same lattice constant as the lattice constant on the second surface of the modified layer.
  • the sacrifice layer is preferably formed to a thickness of 1 nm to 10 nm, and may be formed based on AlAs or AlGaAs.
  • the sacrificial layer may be formed based on AlInAs or AlAsSb.
  • a compound semiconductor solar cell having such a configuration includes a step of forming a sacrificial layer on one side of a mother substrate; And forming a compound semiconductor layer for forming at least one cell on the sacrificial layer.
  • the mother substrate may be a GaAs single crystal wafer or a Ge single crystal wafer; And a metamorphic layer in direct physical contact with one side of the GaAs single crystal wafer or the Ge single crystal wafer and having a lattice constant varying along the thickness direction.
  • the lattice constant of the first surface contacting the GaAs single crystal wafer or the Ge single crystal wafer from both surfaces of the modified layer is smaller than the lattice constant of the second surface located on the opposite side of the first surface .
  • the lattice constant of the modified layer can be increased stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the lattice constant on the first surface of the modified layer may be equal to the lattice constant of the GaAs single crystal wafer or the Ge single crystal wafer.
  • the modified layer is In x Ga 1 -x P or In x Ga 1 having a lattice constant of 5.70 ⁇ to 5.77 ⁇ - can be formed as x As.
  • x means atomic%
  • x on the first side is zero
  • x on the second side is 0.19.
  • the sacrificial layer may be formed to be in direct physical contact with the second surface of the modified layer, and may be formed based on AlAs or AlGaAs having the same lattice constant as the GaAs single crystal wafer or the Ge single crystal wafer, Can be formed based on AlInAs or AlAsSb having the same lattice constant as the lattice constant on the second surface.
  • Layer is preferably formed to a thickness of 1 nm to 10 nm.
  • the base layer of the bottom cell may be formed of In y Ga 1 - y As having a band gap energy of 0.95 eV to 1.20 eV and a lattice constant of 5.70 ⁇ to 5.77 ⁇ ,
  • y and z mean atomic%, y is 0.13 to 0.30, and z is 0.24 to 0.40.
  • a back electrode having a sheet electrode shape may be formed on a back surface of the bottom cell and a grid electrode may be formed on a front surface of the top cell.
  • a compound semiconductor solar cell having a multi junction structure of this structure particularly a compound semiconductor solar cell having a double junction structure, has a band gap energy of 0.95 eV to 1.20 eV and a lattice constant of In y Ga 1 - y As having a lattice constant of 5.70 ⁇ to 5.77 ⁇
  • a base layer of a bottom cell formed;
  • a base layer of a top cell formed of Ga z In 1 - z P having a band gap energy of 1.60 eV to 1.80 eV and a lattice constant of 5.70 A to 5.77 A;
  • a rear electrode disposed on a back surface of the bottom cell and formed in the form of a sheet electrode;
  • a front electrode formed on a front surface of the top cell and formed in a grid shape.
  • y is from 0.13 to 0.30
  • z is from 0.24 to 0.40.
  • a mother substrate comprises a GaAs single crystal wafer or a Ge single crystal wafer; A metamorphic layer formed of Ga v In 1 -v P and located on one side of the GaAs single crystal wafer or the Ge single crystal wafer and having a lattice constant varying along the thickness direction; And a protective layer formed of In w Ga 1 - w As and located on one side of the modified layer.
  • v and w mean atomic%, respectively.
  • the lattice constant of the GaAs monocrystalline wafer or the Ge monocrystalline wafer on both sides of the modified layer is the same as the lattice constant of the GaAs single crystal wafer or the Ge single crystal wafer
  • the lattice constant on the second surface is greater than the lattice constant on the first surface and is equal to the lattice constant of the protective layer.
  • the lattice constant of the modified layer may increase stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the GaAs single crystal wafer or the Ge single crystal wafer has a lattice constant of 5.65 A and the denaturing layer and the protective layer have a lattice constant of 5.70 A to 5.77 A larger than the lattice constant of the GaAs single crystal wafer or Ge single crystal wafer.
  • the modified layer on the first side is formed of Ga 0.52 In 0.48 P having a band gap energy of 1.60 to 1.80 eV, and v on the second side is 0.24 to 0.40.
  • w 0.13 to 0.30.
  • the mother substrate may further include a sacrificial layer located on the protective layer.
  • the sacrificial layer may have the same lattice constant as the GaAs single crystal wafer or the Ge single crystal wafer or may have the same lattice constant as the lattice constant on the second surface of the modified layer.
  • the sacrifice layer is preferably formed to a thickness of 1 nm to 10 nm, and may be formed based on AlAs or AlGaAs.
  • the sacrificial layer may be formed based on AlInAs or AlAsSb.
  • a compound semiconductor solar cell having such a configuration includes a step of forming a sacrificial layer on one side of a mother substrate; And forming a compound semiconductor layer for forming at least one cell on the sacrificial layer.
  • the mother substrate may be a GaAs single crystal wafer or a Ge single crystal wafer; A metamorphic layer formed of Ga v In 1 -v P and located on one side of the GaAs single crystal wafer or the Ge single crystal wafer and having a lattice constant varying along the thickness direction; And In w Ga 1 - w As, and may include a protective layer located on one side of the modified layer, and the first side contacting the GaAs single crystal wafer or the Ge single crystal wafer from both sides of the modified layer Wherein the lattice constant at the second surface located on the opposite side of the first surface is larger than the lattice constant at the first surface and the lattice constant at the second surface located at the opposite side of the first surface is larger than the lattice constant of the GaAs single crystal wafer or the Ge single crystal wafer, Lt; / RTI >
  • v and w mean atomic%, respectively.
  • the lattice constant of the modified layer can be increased stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the modified layer on the first side is formed of Ga 0.52 In 0.48 P having a band gap energy of 1.60 to 1.80 eV, and v on the second side is 0.24 to 0.40.
  • the sacrificial layer may be formed on the protective layer.
  • the sacrificial layer may be formed on the GaAs single crystal wafer or the Ge single crystal wafer based on AlAs or AlGaAs having the same lattice constant, or may be formed on the second surface of the modified layer, Can be formed based on AlInAs or AlAsSb having the same lattice constant.
  • Layer is preferably formed to a thickness of 1 nm to 10 nm.
  • the mother substrate has a modified layer (and a protective layer for protecting the denatured layer) having an increased lattice constant as compared with a GaAs single crystal wafer or a Ge single crystal wafer, and the compound semiconductor layer is a denatured layer Lt; / RTI >
  • the band gap energy of the bottom cell and the top cell can be lowered as compared with the prior art.
  • the band gap energy of the bottom cell is 1.42 eV and the band gap energy of the top cell is 1.88 eV, the theoretical efficiency is limited to about 34.9%.
  • the band gap energy of the bottom cell can be reduced to 1.1 eV
  • the band gap energy of the top cell can be reduced to 1.7 eV.
  • the bottom cell and the top cell of the compound semiconductor solar cell can be formed so as to have a band gap energy close to the maximum theoretical efficiency obtained in a compound semiconductor solar cell having a double junction structure.
  • a sacrificial layer is used to directly form a compound semiconductor layer on a GaAs single crystal wafer or a Ge single crystal wafer without separating the GaAs single crystal wafer or the Ge single crystal wafer from the compound semiconductor layer, thereby forming a modified layer between the compound semiconductor layers
  • the band gap energy may be adjusted by changing the lattice constant between the band gap energy and the band gap energy.
  • the modified layer is formed directly on the GaAs single crystal wafer or the Ge single crystal wafer, and optionally the protective layer is formed directly on the modified layer, after the sacrificial layer is removed through the ELO (epitaxial lift off) Or the mother board comprising the denaturation layer and the protective layer can be reused.
  • manufacturing cost can be reduced and formation time of the compound semiconductor layer can be reduced compared with the case where the lattice constant and the band gap energy are adjusted using the modified layer between the cell and the cell.
  • the mother substrate of the present invention can also be used for the production of a compound semiconductor solar cell having a multi-junction structure of triple junction structure or more including at least one middle cell.
  • FIG. 1 is a graph showing the correlation between the band gap energy and the lattice constant of various materials forming the compound semiconductor layer.
  • FIG. 2 is a graph showing a correlation between band gap energies of a top cell and a bottom cell according to a lattice constant change.
  • 3 is a graph showing the correlation between the lattice constant and the theoretical efficiency in three measurement environments.
  • FIG. 5 is a table showing changes in the band gap energy of the first light absorbing layer of the top cell and the band gap energy of the second light absorbing layer of the bottom cell according to the size of the lattice constant and the theoretical efficiency.
  • FIG. 6 is a sectional view of a mother board according to the first embodiment of the present invention.
  • FIG. 7 is a sectional view of a mother board according to a second embodiment of the present invention.
  • FIG. 8 is a process diagram showing a method of manufacturing a compound semiconductor solar cell using the mother substrate shown in Fig.
  • FIG. 9 is a sectional view of a mother board according to a third embodiment of the present invention.
  • FIG. 10 is a sectional view of a mother board according to a fourth embodiment of the present invention.
  • FIG. 11 is a process diagram showing a method for manufacturing a compound semiconductor solar cell using the mother substrate shown in Fig.
  • FIG. 12 is a cross-sectional view of a compound semiconductor solar cell manufactured by the manufacturing method shown in Fig. 8 or Fig.
  • first, second, etc. may be used to describe various components, but the components may not be limited by the terms. The terms may only be used for the purpose of distinguishing one element from another.
  • the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
  • the term "and / or” may include any combination of a plurality of related listed items or any of a plurality of related listed items.
  • the thickness is enlarged to clearly represent the layers and regions.
  • a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over” another part, it means that there is no other part in the middle.
  • FIG. 1 is a graph showing the correlation between the band gap energy and the lattice constant of various materials forming the compound semiconductor layer.
  • FIG. 2 is a graph showing a correlation between band gap energies of a top cell and a bottom cell according to a lattice constant change.
  • 3 is a graph showing the correlation between the lattice constant and the theoretical efficiency in three measurement environments.
  • FIG. 5 is a table showing changes in the band gap energy of the first light absorbing layer of the top cell and the band gap energy of the second light absorbing layer of the bottom cell according to the size of the lattice constant and the theoretical efficiency.
  • FIG. 6 is a sectional view of a mother board according to the first embodiment of the present invention.
  • FIG. 7 is a sectional view of a mother board according to a second embodiment of the present invention.
  • FIG. 8 is a process diagram showing a method of manufacturing a compound semiconductor solar cell using the mother substrate shown in Fig.
  • FIG. 9 is a sectional view of a mother board according to a third embodiment of the present invention.
  • FIG. 10 is a sectional view of a mother board according to a fourth embodiment of the present invention.
  • FIG. 11 is a process diagram showing a method for manufacturing a compound semiconductor solar cell using the mother substrate shown in Fig.
  • FIG. 12 is a cross-sectional view of a compound semiconductor solar cell manufactured by the manufacturing method shown in Fig. 8 or Fig.
  • the compound semiconductor solar cell having the double junction structure compound semiconductor layer includes a top cell C1, a grid-shaped front electrode 100 located on the front surface of the top cell C1, The first tunnel layer TRJ1 located between the top cell C1 and the bottom cell C2 and the first tunnel layer TRJ1 located between the top cell C1 and the bottom cell C2, and a rear electrode 200 having a sheet electrode shape.
  • the plurality of layers forming the top cell C1, the bottom cell C2 and the first tunnel layer TRJ1 are all formed of a compound semiconductor, and the front electrode 100 and the rear electrode 200 are formed of a conductive metal .
  • the top cell C1 includes a first light absorbing layer PV1, a first surface of the first light absorbing layer PV1, for example, a first window layer WD1 located on a front surface, And a first rear front layer BSF1 located on the second side of the first light absorbing layer PV1, for example, the rear side.
  • the first light absorbing layer PV1 includes a first base layer PV1-1 including an n-type impurity and in contact with the first window layer WD1, a first base layer PV1-1 including a p-type impurity, And a first emitter layer PV1-2 located on the rear surface of the first base layer PV1-1 and forming a pn junction with the first base layer PV1-1 and the first emitter layer PV1-1, 2) is formed of an indium phosphide (hereinafter referred to as InP) -based compound semiconductor.
  • InP indium phosphide
  • the first base layer PV1-1 is formed of n-type Ga z In 1-z P having a band gap energy of 1.60 eV to 1.80 eV and a lattice constant of 5.70 A to 5.77 A
  • (PV1-2) is formed of p-type Ga z In 1-z P having a band gap energy of 1.60 eV to 1.80 eV and a lattice constant of 5.70 ⁇ to 5.77 ⁇ .
  • z is in the range of 0.24 to 0.40.
  • the reason for limiting the range of z is to effectively reduce the bandgap of the top cell by effectively reducing the lattice constant of the top cell.
  • the p-type impurity doped in the first emitter layer PV1-2 may be selected from carbon (C), magnesium (Mg), zinc (Zn), or a combination thereof.
  • the doped n-type impurity may be selected from silicon (Si), selenium (Se), tellurium (Te), or a combination thereof.
  • a pn junction in which the first emitter layer PV1-2 and the first base layer PV1-1 are joined is formed in the first light-absorbing layer PV1, so that the first light-
  • the electron-hole pairs generated by the light are separated into electrons and holes by the internal potential difference formed by the pn junction of the first light-absorbing layer PV1, the electrons move toward the n-type, and the holes move toward the p-type.
  • the holes generated in the first light absorbing layer PV1 move to the rear electrode 200 through the bottom cell C2, and the electrons generated in the first light absorbing layer PV1 pass through the first window layer WD1, And moves to the front electrode 100 through the front contact layer FC.
  • holes generated in the first light absorbing layer PV1 may be transmitted through the front contact layer FC
  • the electrons generated in the first light absorbing layer PV1 move to the rear electrode 200 through the rear contact layer BC.
  • the first backside front layer BSF1 has the same conductivity type as the first emitter layer PV1-2 physically in direct contact and is made of an InP-based material similar to the first window layer WD1, For example, p-type AlInP.
  • the first backside front layer (BSF1) may be formed of p-type Al 0.67 In 0.33 P having a band gap energy of 2.2 eV and a lattice constant of 5.70 A to 5.77 A.
  • the first rear whole front layer BSF1 is formed of a first rear front layer BSF1 and a second rear front layer BSF2 which are physically in direct contact with each other in order to effectively block charges (holes or electrons) Is formed entirely on the back surface of the emitter layer PV1-2.
  • the first emitter layer PV1-2 and the first base layer PV1-1 can be made of the same material (homogeneous junction) having the same band gap energies and can be made of different materials having different band gap energies It can be made of other materials (heterojunction).
  • the first base layer PV1-1 may be formed of n-type Ga z In 1-z P having a band gap energy of 1.60 eV to 1.80 eV and a lattice constant of 5.70 A to 5.77 A
  • the first emitter layer PV1-2 may be formed of p-type Ga z In 1-z P having a band gap energy of 1.60 eV to 1.80 eV and a lattice constant of 5.70 ⁇ to 5.77 ⁇ .
  • the first window layer WD1 may be formed between the first light absorbing layer PV1 and the front electrode 100 and may be formed by doping an n-type impurity into the III-VI group semiconductor compound.
  • first emitter layer PV1-2 when the first emitter layer PV1-2 is located on the first base layer PV1-1 and the first window layer WD1 is located on the first emitter layer PV1-2, WD1) may include a p-type impurity.
  • the first window layer WD1 functions to passivate the front surface of the first light absorbing layer PV1. Therefore, when carriers (electrons and holes) move to the surface of the first light absorbing layer PV1, the first window layer WD1 can prevent the carriers from recombining on the surface of the first light absorbing layer PV1.
  • the first window layer WD1 is disposed on the front surface of the first light absorbing layer PV1, that is, on the light incident surface, the first light absorbing layer PV1 is formed on the first light absorbing layer PV1, It is necessary to have a band gap energy energy higher than the band gap energy energy of the first photovoltaic element PV1.
  • the first window layer WD1 it is necessary to form the first window layer WD1 with a substance which is hardly dissolved in the ELO process using hydrofluoric acid.
  • the first window layer WD1 may be formed of n-type Al 0.33 In 0.67 P having a band gap energy of 2.2 eV and a lattice constant of 5.70 A to 5.77 A.
  • the first rear whole layer BSF1 may be thicker than the first window layer WD1.
  • the first rear whole layer BSF1 may be formed to a thickness of 50 to 100 nm.
  • the antireflection film (not shown) may be located in a region other than the region where the front electrode 100 and / or the front contact layer FC are located in the front surface of the first window layer WD1.
  • the antireflection film may be disposed on the front contact layer FC and the front electrode 100 as well as the first window layer WD1.
  • the antireflection film having such a configuration may include magnesium fluoride, zinc sulfide, titanium oxide, silicon oxide, derivatives thereof, or a combination thereof.
  • the compound semiconductor solar cell may further include a bus bar electrode physically connecting the plurality of front electrodes 100.
  • the bus bar electrode may be exposed to the outside without being covered by the antireflection film.
  • the front electrode 100 may be formed to extend in the first direction and spaced apart at a predetermined interval along a second direction Y-Y 'orthogonal to the first direction.
  • the front electrode 100 having such a structure may be formed to include an electrically conductive material and may include at least one of gold (Au), germanium (Ge), and nickel (Ni), for example.
  • the front contact layer FC positioned between the first window layer WD1 and the front electrode 100 dopes the Group III-VI semiconductor compound with an n-type impurity at a doping concentration higher than that of the first base layer PV1-1 .
  • the front contact layer (FC) may be formed of n + type In 0.19 Ga 0.81 As having a band gap energy of 1.1 eV and a lattice constant of 5.70 A to 5.77 A.
  • the front contact layer FC forms an ohmic contact between the first window layer WD1 and the front electrode 100. That is, when the front electrode 100 directly contacts the first window layer WD1, the impurity doping concentration of the first window layer WD1 is low, so that the gap between the front electrode 100 and the first light absorbing layer PV1 Ohmic contacts are not well formed.
  • the carrier moved to the first window layer WD1 can not easily move to the front electrode 100 and can be destroyed.
  • the front contact layer FC is formed between the front electrode 100 and the first window layer WD1
  • the movement of the carriers is prevented by the front contact layer FC forming the ohmic contact with the front electrode 100 So that the short circuit current density (Jsc) of the compound semiconductor solar cell increases.
  • the efficiency of the solar cell can be further improved.
  • the front contact layer FC can be formed in the same plane shape as the front electrode 100.
  • the bottom cell C2 includes a second light absorbing layer PV2, a first surface of the second light absorbing layer PV2, for example, a second window layer WD2 located on the front surface, a second light absorbing layer PV2, A second backside front layer BSF2 located on a second side of the first back side layer BS2 and a rear side contact layer BC located on the back side of the second rear front side layer BSF2, .
  • the bottom cell C2 includes a light absorbing layer formed of a compound semiconductor including a second base layer and a second emitter layer based on GaAs.
  • the second base layer and the second emitter layer may be formed of In y Ga 1-y As having a band gap energy of 0.95 eV to 1.20 eV and a lattice constant of 5.70 ⁇ to 5.77 ⁇ .
  • y is in the range of 0.13 to 0.30. The reason why y is limited to the above range is to effectively reduce the band gap of the bottom cell by effectively reducing the lattice constant of In y Ga 1-y As.
  • the bottom cell C2 includes a second base layer PV2-1 formed of n-type In 0.19 Ga 0.81 As having a band gap energy of 1.1 eV and a lattice constant of 5.70 A to 5.77 A, (PV2-2) formed of p-type In 0.19 Ga 0.81 As having a band gap energy of 1.1 eV and a lattice constant of 5.70 A to 5.77 A, forming a pn junction with the first emitter layer (PV2-1) A second light absorbing layer PV2, an n-type Ga 0.33 layer having a band gap energy of 1.7 eV and a lattice constant of 5.70 A to 5.77 A, located between the first tunnel layer TRJ1 and the second base layer PV2-1, A second window layer WD2 formed of In 0.67 P and a p-type Ga 0.33 In layer having a band gap energy of 1.7 eV and a lattice constant of 5.70 A to 5.77 A, which are located on the back surface of the second emitter layer PV
  • the bottom cell C2 is located at the rear of the top cell C1 to absorb light of long wavelength transmitted through the top cell C1 without being absorbed in the top cell C1.
  • the second base layer PV2-1 and the second emitter layer PV2-2 form the first base layer PV1-1 and the first emitter layer PV1-2 of the top cell C1 A material having a band gap energy lower than the band gap energy of GaInP (approximately 1.9Ev), for example, InGaAs having a band gap energy of approximately 1.1 eV.
  • the second base layer PV2-1 and the second emitter layer PV2-2 may be formed of In 0.19 Ga 0.81 As having a band gap energy of 1.1 eV and a lattice constant of 5.70 A to 5.77 A, respectively have.
  • the second window layer WD2 and the second rear whole front side BSF2 are formed of a material having a higher band gap energy than the second base layer PV2-1 and the second emitter layer PV2-2, GaInP or AlGaInP.
  • the second window layer WD2 and the second rear whole layer BSF2 may be formed of Ga 0.33 In 0.67 P having a band gap energy of 1.7 eV and a lattice constant of 5.70 A to 5.77 A, respectively.
  • the first tunnel layer TRJ1 includes a first layer TRJ1 formed of p ++ type AlInGaAs doped with a higher concentration of p-type impurity than the first rear front layer BSF1 and physically in direct contact with the first rear front layer BSF1 And a second layer TRJ1-2 formed of n ++ -type GaInP doped with n-type impurity at a higher concentration than the second window layer WD2 and physically in direct contact with the second window layer WD2 can do.
  • the rear contact layer BC located on the rear surface of the first rear front layer BSF1 is entirely located on the rear surface of the first rear front layer BSF1 and is formed by doping a Group III- .
  • the back contact layer BC may be formed of p + type In 0.19 Ga 0.81 As having a band gap energy of 1.1 eV and a lattice constant of 5.70 A to 5.77 A.
  • This rear contact layer BC can form an ohmic contact with the rear electrode 200, and the short circuit current density Jsc of the compound semiconductor solar cell can be further improved. As a result, the efficiency of the solar cell can be further improved.
  • the thickness of the front contact layer FC and the rear contact layer BC may each be formed to a thickness of 100 nm to 300 nm.
  • the front contact layer FC may be formed to a thickness of 100 nm and the rear contact layer BC may be formed to a thickness of 300 nm.
  • the rear electrode 200 positioned on the rear surface of the rear contact layer BC may be formed as a sheet-like conductive material positioned entirely on the rear surface of the rear contact layer BC, unlike the front electrode 100 . That is, the rear electrode 200 may be referred to as a sheet electrode located on the entire rear surface of the rear contact layer BC.
  • the rear electrode 200 may be formed in the same plane as the first light absorbing layer PV1, and may be formed of various conductive materials.
  • the rear electrode 200 includes a first electrode layer 200A that directly contacts a bottom layer of the bottom cell C2, for example, a rear surface of the rear contact layer BC to transmit a carrier, And a second electrode layer 200B positioned on the rear surface of the first electrode layer 200A to support the first electrode layer 200A.
  • the first electrode layer 200A for transmitting a carrier is formed of a material having a contact resistance similar to that of a conventional rear electrode forming material, that is, gold (Au), and is formed of a material having a high reflectivity can do.
  • the first electrode layer 200A directly contacting the rear contact layer BC is formed of silver (Ag) having an excellent electrical bonding property with the rear contact layer BC and having an average reflectivity of 95% or more at a wavelength range of 600 nm to 950 nm ) May be formed by physical vapor deposition to a thickness of 50 to 500 nm.
  • the second electrode layer 200B that supports the first electrode layer 200A has a higher contact resistance than silver (Ag) that forms the first electrode layer 200B and has low reflectivity at a wavelength range of 600 nm to 950 nm.
  • Copper (Cu) can be formed by electroplating to a thickness of 1 to 10 ⁇ .
  • the silver (Ag) having a low contact resistance with the rear contact layer BC and having a high average reflectivity in the wavelength range of 600 nm to 950 nm is used as the material for forming the first electrode layer 200A, And the photon recycling can be increased due to the reduction of the optical loss, so that the efficiency of the solar cell can be improved.
  • the compound semiconductor solar cell having such a structure can be manufactured by using any one of the mother board shown in Figs. 6, 7, 9 and 10.
  • Fig. 6 shows the mother board of the first embodiment with the modified layer
  • Fig. 7 shows the mother board of the second embodiment with the modified layer and the sacrificial layer.
  • Fig. 9 shows a mother board of a third embodiment with a denatured layer and a protective layer
  • Fig. 10 shows a mother board of the fourth embodiment with a denatured layer, a protective layer and a sacrificial layer.
  • the mother substrate 300-1, 300-2, 300-3, and 300-4 of the first to fourth embodiments may include a GaAs single crystal wafer or a Ge single crystal wafer, respectively.
  • the mother substrate 300-1, 300-2, 300-3, and 300-4 includes the GaAs wafer 300A will be described as an example.
  • the mother substrate 300-1 of the first embodiment includes a GaAs wafer 300A and a metamorphic layer 300B that is in direct physical contact with one side of the GaAs wafer 300A.
  • the GaAs wafer 300A serves as a base layer for providing a plurality of compound semiconductor layers forming the bottom cell C2 and a plurality of compound semiconductor layers forming the top cell C1 to form a suitable lattice structure.
  • the modified layer 300A has a lattice constant of a plurality of compound semiconductor layers forming the bottom cell C2 and a lattice constant of a plurality of compound semiconductor layers forming the top cell C1 in comparison with the lattice constant of the GaAs wafer 300A Thereby adjusting the band gap energy of the bottom cell C2 and the band gap energy of the top cell C1 so as to obtain an efficiency close to the maximum theoretical efficiency obtained in a compound semiconductor solar cell having a double junction structure.
  • the lattice constant of the modified layer 300B varies along the thickness direction. That is, the denatured layer 300B means a layer whose lattice constant varies along the thickness direction.
  • the lattice constant on the first surface contacting the GaAs wafer 300A on both sides of the modified layer 300B is equal to the lattice constant of the GaAs wafer 300A.
  • lattice constant of the modified layer 300B on the second surface located on the opposite side of the first surface may increase stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the GaAs wafer 300A has a lattice constant of 5.65 ANGSTROM. Therefore, when the lattice constant of the compound semiconductor layer formed on the modified layer 300B is increased by the lattice constant of the GaAs wafer 300A using the modified layer 300B, the top cell and the bottom cell are formed directly on the GaAs wafer The band gap energy of the first light absorbing layer PV1 of the top cell C1 and the band gap energy of the second light absorbing layer PV2 of the bottom cell C2 can be lowered.
  • a top cell (C1) and a first band gap energy is 1.88 of the light absorption layer (PV1)
  • a bottom cell (C2) a second band gap of the light absorbing layer (PV2) to the formation of the GaAs to form a
  • the energy is 1.42.
  • the efficiency (AMO efficiency) when used in a space environment is 31.3%
  • the efficiency (AM1.5G efficiency) when used in a ground environment is 34.9% Is 32.5%.
  • the modified layer 300B having the lattice constant increased to 5.7A on the second surface is formed on the GaAs wafer having the lattice constant of 5.65A and the bottom cell and the top cell are formed on the modified layer 300B Ga 0 . 52
  • a top cell (C1) the first light absorbing layer a second light absorbing layer (PV2) of (PV1) a bottom cell (C2) formed in the band gap energy is lowered to 1.8, with the GaAs to form the P The band gap energy is reduced to 1.2.
  • the efficiency (AMO efficiency) for use in a space environment is 33.8%
  • the efficiency for use in a ground environment is 36.9% Is 33.6%.
  • the modified layer 300B having the lattice constant increased to 5.73A on the second surface is formed on the GaAs wafer having the lattice constant of 5.65A and the bottom cell and the top cell are formed on the modified layer 300B Ga 0 . 52 In 0 .48 a top cell (C1) the first light absorbing layer a second light absorbing layer (PV2) of (PV1) a bottom cell (C2) formed in the band gap energy is lowered to 1.72, with the GaAs to form the P The band gap energy is lowered to 1.09.
  • the efficiency (AMO efficiency) when used in a space environment is 34.2%
  • the efficiency (AM1.5G efficiency) when used in a ground environment is 37.1% Is 34.2%.
  • the modified layer 300B having the lattice constant increased to 5.75A on the second surface is formed on the GaAs wafer having the lattice constant of 5.65A and the bottom cell and the top cell are formed on the modified layer 300B Ga 0 . 52 In 0 .48 a top cell (C1) the first light absorbing layer a second light absorbing layer (PV2) of (PV1) a bottom cell (C2) formed in the band gap energy is lowered to 1.66, with the GaAs to form the P The band gap energy is lowered to 1.03.
  • the efficiency (AMO efficiency) in the space environment is 33.9%
  • the efficiency (AM1.5G efficiency) in the use in the ground environment is 36.6%
  • the efficiency (AM1.5D efficiency) Is 34.8%.
  • the modified layer 300B having the lattice constant increased to 5.76A on the second surface is formed on the GaAs wafer having the lattice constant of 5.65A and the bottom cell and the top cell are formed on the modified layer 300B Ga 0 . 52
  • a top cell (C1) the first light absorbing layer a second light absorbing layer (PV2) of (PV1) a bottom cell (C2) formed in the band gap energy is lowered to 1.63, with the GaAs to form the P The band gap energy is lowered to 1.09.
  • the efficiency (AMO efficiency) when used in a space environment is 33.5%
  • the efficiency (AM1.5G efficiency) when used in a ground environment is 36.3% Is 35.1%.
  • the AMO efficiency and AM1.5G efficiency are the highest when using a dense layer having a lattice constant of 5.73 ⁇ on the second side, and the AM1.5D efficiency is a lattice constant of 5.76 ⁇ on the second side The highest value is obtained in the case of using the modified layer having a high refractive index.
  • a double-junction solar cell can be manufactured by appropriately selecting a modified layer having a lattice constant of 5.7 A to 5.77 A on the second surface in accordance with the use environment of the solar cell.
  • x on the first surface of the modified layer 300B is 0 (zero), and x on the second surface is 0.19.
  • the modified layer 300B may be formed to a thickness of 200 to 300 nm and may be formed of a plurality of films within the thickness range to increase the lattice constant from the first surface to the second surface.
  • a sacrificial layer 400 physically in direct contact with the modified layer 300B of the mother substrate 300-1 is formed on one surface of the modified layer 300B and the bottom cell C2 is formed on the sacrificial layer 400.
  • a compound semiconductor layer CS3 for forming the first tunnel layer TRJ1 and a compound semiconductor layer CS1 for forming the top cell C1 are sequentially formed.
  • the sacrificial layer 400 may be formed of AlAs or AlAsSb having the same lattice constant as the lattice constant of the second surface of the modified layer 300B or may be formed of AlAs or AlGaAs having the same lattice constant as the GaAs wafer 300A, can do.
  • the sacrificial layer 400 has a lattice constant equal to the lattice constant of the second surface of the modified layer 300B, the compound semiconductor layer of the bottom cell C2 formed on the sacrificial layer 400 and the compound semiconductor layer of the top cell C1 ) Has the same lattice constant as that of the modified layer 300B, so there is no particular limitation in forming the sacrifice layer.
  • the sacrifice layer 400 may be formed to a thickness of 20 to 50 nm.
  • the compound semiconductor layer formed on the sacrifice layer 400 is formed in the same lattice as the denatured layer 300B In order to have a constant, the thickness of the sacrificial layer 400 must be very thin.
  • the sacrifice layer 400 when the sacrifice layer 400 is formed to a thickness of 1 nm to 10 nm, the sacrifice layer 400 is formed on the basis of AlAs or AlGaAs having the same lattice constant as the GaAs wafer 300A
  • the compound semiconductor layer of the bottom cell C2 and the compound semiconductor layer of the top cell C1 have the same lattice constant as the lattice constant of the second surface of the modified layer 300B.
  • the sacrifice layer 400 is preferably formed to a thickness of 1 to 10 nm.
  • the compound semiconductor layer formed on the sacrificial layer 400 may be formed by a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method, or any other suitable method for forming an epitaxial layer, And may be formed by a regular growth method or an inverse growth method.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the sacrificial layer is removed by the ELF (epitaxial lift off) method using hydrofluoric acid (HF), so that the mother substrate 300-1 can be separated from the compound semiconductor layer.
  • ELF epiaxial lift off
  • HF hydrofluoric acid
  • the mother substrate 300-1 is formed of the GaAs wafer 300A and the modified layer 300B has been described.
  • mother board of the present invention can be modified into various forms.
  • the mother substrate 300-2 may be formed of a GaAs wafer 300A-2, a denatured layer 300B, and a sacrificial layer 400. As shown in FIG.
  • the modified layer 300 and the sacrificial layer 400 provided on the mother substrate of the second embodiment of the present embodiment are the same as those described in the first embodiment.
  • the mother substrate 300-3 of the third embodiment includes a GaAs wafer 300A, a modified layer 300B-3 located on one side of the GaAs wafer 300A, And a protective layer 300C-3 located on one side of the modified layer 300B-3.
  • the modified layer 300B-3 is formed by lattice constants of a plurality of compound semiconductor layers forming the bottom cell C2 and lattice constants of a plurality of compound semiconductor layers forming the top cell C1 to a lattice constant of the GaAs wafer 300A
  • the bandgap energy of the bottom cell C2 and the bandgap energy of the top cell C1 are adjusted so as to obtain an efficiency close to the maximum theoretical efficiency obtained in the compound semiconductor solar cell having the double junction structure.
  • the lattice constant of the modified layer 300B-3 varies along the thickness direction.
  • the lattice constant of the first surface in contact with the GaAs wafer 300A on both sides of the modified layer 300B-3 is equal to the lattice constant of the GaAs wafer 300A, and the lattice constant of the first surface contacting the protective layer 300C-
  • the lattice constant on the second surface is the same as the lattice constant of the protective layer 300C-3.
  • the atomic% of Ga may decrease stepwise, exponentially or logarithmically from the first surface to the second surface. Therefore, the lattice constant of the modified layer 300B-3 may increase stepwise, exponentially or logarithmically from the first surface to the second surface.
  • the modified layer 300B-3 of this embodiment is formed of Ga v In 1 -v P, and the size of v for forming the lattice constant of the second surface of the modified layer 300B-3 from 5.70A to 5.77A Is in the range of 0.24 to 0.40, and the modified layer (300B-3) has a band gap energy of 1.60 to 1.80 eV.
  • the modified layer 300B-3 may be formed to a thickness of 200 to 300 nm, and may be formed of a plurality of films within the thickness range to increase the lattice constant from the first surface to the second surface.
  • the protective layer (300C-3) is formed on the modified layer (300B-3) to protect the modified layer (300B-3) in the ELO process, In w Ga 1 - it is formed of a single layer formed of a w As.
  • the protective layer 300C-3 has a band gap energy of 0.95 to 1.20 eV, and the protective layer 300C-3 has a band gap energy of 0.95 to 1.20 eV, with w having a lattice constant of 5.70 A to 5.77 A of 0.13 to 0.30.
  • a method of manufacturing a compound semiconductor solar cell using a mother substrate 300-3 including a modified layer 300B-3 formed on a GaAs wafer 300A and a protective layer 300C-3 will be described below.
  • the compound semiconductor layer CS3 for forming the first tunnel layer TRJ1 and the compound semiconductor layer CS1 for forming the top cell C1 are sequentially formed.
  • the sacrificial layer 400 may be made of AlAs or AlGaAs having the same lattice constant as the GaAs wafer 300A or AlInAs or AlAsSb having the same lattice constant as the lattice constant of the protective layer 300C-3 .
  • the sacrifice layer 400 has a lattice constant equal to the lattice constant of the protective layer 300C-3, the compound semiconductor layer of the bottom cell C2 formed on the sacrifice layer 400 and the compound of the top cell C1 Since the semiconductor layer also has the same lattice constant as the protective layer 300C-3, there is no particular limitation in forming the sacrificial layer.
  • the sacrifice layer 400 may be formed to a thickness of 20 to 50 nm.
  • the compound semiconductor layer formed on the sacrifice layer 400 is formed on the protective layer 300C-
  • the thickness of the sacrificial layer 400 should be very thin.
  • the sacrifice layer 400 when the sacrifice layer 400 is formed to a thickness of 1 nm to 10 nm, the sacrifice layer 400 is formed on the basis of AlAs or AlGaAs having the same lattice constant as the GaAs wafer 300A
  • the compound semiconductor layer of the bottom cell C2 and the compound semiconductor layer of the top cell C1 have the same lattice constant as the lattice constant of the protective layer 300C-3.
  • the sacrifice layer 400 is preferably formed to a thickness of 1 to 10 nm.
  • the sacrificial layer is removed by the ELF (epitaxial lift off) method using hydrofluoric acid (HF), so that the mother substrate 300-3 can be separated from the compound semiconductor layer
  • the protective layer 300C-3 for protecting the denatured layer 300B-3 in the ELO process is removed by using NH 4 OH / H 2 O 2 / DI water, H 3 PO 4 / H 2 O 2 / DI water, H 2 SO 4 / H 2 O 2 / DI water, or a mixture thereof.
  • the protective layer 300C-3 may not be removed.
  • the mother substrate 300-3 is formed of the GaAs wafer 300A, the modified layer 300B-3, and the protective layer 300C-3 has been described.
  • the mother substrate 300-4 may be formed of the GaAs wafer 300A, the denatured layer 300B-4, the protective layer 300C-4, and the sacrificial layer 400.
  • the manufacturing method of the present invention can also be used in manufacturing a compound semiconductor solar cell having a compound semiconductor layer having a triple junction or more structure.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une carte mère, un procédé de fabrication d'une cellule solaire à semi-conducteurs composite à au moyen de la carte mère, ainsi qu'une cellule solaire à semi-conducteurs composite. Une carte mère, selon un aspect de la présente invention, comprend une tranche de monocristal de GaAs ou une tranche de monocristal de Ge ; une couche métamorphique qui est physiquement en contact direct avec une surface de la tranche de monocristal de GaAs ou de la tranche de monocristal de Ge et qui change de constante du réseau cristallin avec des directions d'épaisseur. Parmi les surfaces opposées de la couche métamorphique, une première surface en contact avec la tranche de monocristal de GaAs ou la tranche de monocristal de Ge est formée de sorte à avoir une constante du réseau cristallin inférieure à celle d'une seconde surface opposée à la première surface, la constante du réseau cristallin de la couche métamorphique pouvant augmenter de manière progressive, exponentielle ou logarithmique de la première surface à la seconde surface.
PCT/KR2019/000302 2018-01-11 2019-01-08 Carte mère, procédé de fabrication d'une cellule solaire à semi-conducteurs composite au moyen de ladite carte mère et cellule solaire à semi-conducteurs composite WO2019139337A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20180004068 2018-01-11
KR20180004065 2018-01-11
KR10-2018-0004068 2018-01-11
KR10-2018-0004065 2018-01-11

Publications (1)

Publication Number Publication Date
WO2019139337A1 true WO2019139337A1 (fr) 2019-07-18

Family

ID=67219030

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/000302 WO2019139337A1 (fr) 2018-01-11 2019-01-08 Carte mère, procédé de fabrication d'une cellule solaire à semi-conducteurs composite au moyen de ladite carte mère et cellule solaire à semi-conducteurs composite

Country Status (1)

Country Link
WO (1) WO2019139337A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020150137A1 (en) * 2001-04-13 2002-10-17 Beam Edward A. Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
KR20140091077A (ko) * 2007-07-23 2014-07-18 바스프 에스이 광전 탠덤 전지
US20150034142A1 (en) * 2012-04-12 2015-02-05 Azur Space Solar Power Gmbh Solar cell stack
US20150368833A1 (en) * 2014-06-19 2015-12-24 John Farah Laser epitaxial lift-off of high efficiency solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020150137A1 (en) * 2001-04-13 2002-10-17 Beam Edward A. Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers
KR20140091077A (ko) * 2007-07-23 2014-07-18 바스프 에스이 광전 탠덤 전지
US20150034142A1 (en) * 2012-04-12 2015-02-05 Azur Space Solar Power Gmbh Solar cell stack
US20150368833A1 (en) * 2014-06-19 2015-12-24 John Farah Laser epitaxial lift-off of high efficiency solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
STAN, M. ET AL.: "High-efficiency quadruple junction solar cells using OMVPF. with inverted metamorphic device structures", JOURNAL OF CRYSTAL GROWTH, vol. 312, 1 November 2009 (2009-11-01), pages 1370 - 1374, XP007917245, doi:10.1016/j.jcrysgro.2009.10.059 *

Similar Documents

Publication Publication Date Title
US9293615B2 (en) Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
TWI488316B (zh) 反向質變之多接面太陽能電池之替代基板
US20100093127A1 (en) Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
WO2009128669A2 (fr) Dispositif électroluminescent et son procédé de fabrication
WO2014012442A1 (fr) Procédé de fabrication de cellule solaire multijonction efficace
WO2011027951A1 (fr) Cellule solaire
WO2020218740A1 (fr) Cellule solaire et son procédé de production
US11611008B2 (en) Multi-junction laminated laser photovoltaic cell
WO2011002210A2 (fr) Appareil de production d'énergie photovoltaïque
WO2018124641A1 (fr) Cellule solaire à semi-conducteurs composés
EP3614444B1 (fr) Cellule photovoltaïque à laser stratifié à jonctions multiples et son procédé de fabrication
WO2019139337A1 (fr) Carte mère, procédé de fabrication d'une cellule solaire à semi-conducteurs composite au moyen de ladite carte mère et cellule solaire à semi-conducteurs composite
WO2003100868A1 (fr) Dispositifs optoelectroniques a bande interdite multiple, monolithiques et a faible bande interdite
WO2023127991A1 (fr) Cellule solaire et son procédé de fabrication
WO2018155938A1 (fr) Cellule solaire à semi-conducteur composite et son procédé de fabrication
WO2018216984A1 (fr) Cellule solaire à semi-conducteurs composite
WO2019177268A1 (fr) Procédé de fabrication d'une cellule solaire à semi-conducteur composé
WO2017138778A1 (fr) Dispositif à semi-conducteurs
WO2018190569A1 (fr) Cellule solaire à semiconducteur composé
WO2018199555A1 (fr) Cellule solaire à semi-conducteur composite et son procédé de fabrication
US9590131B2 (en) Systems and methods for advanced ultra-high-performance InP solar cells
WO2020040370A1 (fr) Poignée de support et procédé de fabrication d'une batterie solaire à semi-conducteur composé l'utilisant
WO2018199553A1 (fr) Cellule solaire à semi-conducteur composite et son procédé de fabrication
WO2016021806A1 (fr) Élément émetteur sélectif à hautes performances et son procédé de fabrication
WO2018190618A1 (fr) Dispositif semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19738835

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19738835

Country of ref document: EP

Kind code of ref document: A1