WO2019105126A1

WO2019105126A1 - Composite insulator and method for manufacturing same, and composite casing

Info

Publication number: WO2019105126A1
Application number: PCT/CN2018/108773
Authority: WO
Inventors: 马斌; 方江
Original assignee: 江苏神马电力股份有限公司
Priority date: 2017-12-01
Filing date: 2018-09-29
Publication date: 2019-06-06
Also published as: CN109872848A

Abstract

Disclosed is a composite insulator, comprising an insulating tube and an umbrella skirt coating the outside of said insulating tube; the insulating tube comprises a first winding layer, a first semiconductor material layer, and a second winding layer; said first winding layer is away from the umbrella skirt; the first semiconductor material layer is located between the first winding layer and the second winding layer and is located on part of the cross-section of the outer side of the first winding layer. Also disclosed are a method for manufacturing a composite insulator and a composite bushing. In such a manner, the semiconductor material layer is arranged inside the insulating pipe, thus improving the interference of an electric field on a composite insulator, improving the local electric field distribution, alleviating electric field concentration, preventing the surface of the umbrella skirt from discharging and being galvanically corroded, and preventing reduction in the service life of an insulating tube after long-term use; the composite insulator may be applied to post insulators, composite bushings, or other high-voltage electrical equipment.

Description

Composite insulator and manufacturing method thereof, composite casing

Technical field

The invention relates to the technical field of power transmission external insulation, and more particularly to a composite insulator, a manufacturing method thereof and a composite sleeve.

Background technique

At present, the composite casings widely used in high-voltage equipment such as GIS, H-GIS, DCB, PASS, and COMPASS in the power system are mostly inflated (SF6) casing structures. The composite bushing comprises a composite insulator and an inner central conductor. The composite insulator comprises a FRP insulated tube and an outer silicone rubber shed. The center conductor is fixed on the upper and lower flanges at both ends of the FRP insulated tube, and the outer side of the upper flange is provided with a connecting terminal. And has a high potential, one end of the lower flange is in contact with the outer casing of the high-voltage equipment, is a shield part close to the ground, the lower part of the composite sleeve is connected with the high-voltage equipment, and the electric field distribution between the center conductor and the FRP insulated tube is improved by the grounding shield electrode However, the electric field concentration is likely to occur at the end of the grounding shield electrode, and the corresponding silicone rubber shed surface is prone to discharge and is electrically etched. The FRP insulation tube has a long-term insulation life at high field strength; at the same time, in order to satisfy a certain electric field concentration Strength, to prevent damage of FRP insulation pipe during long-term use, FRP insulation pipe needs to have a larger inner diameter and pipe wall thickness, and material loss is large, which is not conducive to cost reduction.

Summary of the invention

The object of the present invention is to provide a composite insulator, a manufacturing method thereof and a composite sleeve, which can solve the problem that the electric field interferes with the composite insulator, the shed is electrically etched and the service life of the insulating tube is reduced, and the composite insulator can be solved for compounding. The problem is that the inner diameter of the casing is large and the wall of the pipe is thick.

In order to achieve the above object, a technical solution adopted by the present invention is to provide a composite insulator comprising an insulating tube and a shed covering the outside of the insulating tube, the insulating tube comprising a first winding layer, a first semiconductor material layer and a a second wound layer, the first wound layer being away from the shed, the first layer of semiconductor material being located between the first wound layer and the second wound layer and on a portion of the cross section outside the first wound layer.

In this way, the semiconductor material layer is disposed inside the insulating tube, which can improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid the electric discharge of the surface of the shed skirt, and avoid the life after the long-term use of the insulating tube. Down, the composite insulator can be used in post insulators, composite bushings or other high voltage power equipment.

Wherein, the first semiconductor material layer is formed by coating a semiconductor coating on the first wound layer.

Forming a first semiconductor material layer having a certain thickness on a partial cross section of the first wound layer by brushing, the process is relatively simple, and the interface between the semiconductor coating layer and the first wound layer and the second wound layer is more tightly avoided. Interface separation problem.

Wherein, the semiconductor coating is a semiconductor silicone rubber coating containing a conductive filler.

The use of a semiconductor silicone rubber coating containing a conductive filler can better affect the electric field distribution and improve the electric field concentration phenomenon.

Wherein, the first semiconductor material layer is wound and formed on the first wound layer by the semiconductor fiber yarn.

The first semiconductor material layer is wound and formed by using a semiconductor fiber yarn, which is similar to the process of the original wound layer, and is easy to realize industrial production automation.

Wherein, the first wound layer and the second wound layer are each formed by winding a glass fiber yarn impregnated with the base material.

Wherein, the insulating tube further comprises a second layer of semiconductor material, the second layer of semiconductor material being located on a partial section inside the first wound layer or on a partial section outside the second wound layer.

By adding a second layer of semiconductor material on a part of the inner or outer side of the insulating tube, the thickness of the insulating tube has a factor of disturbing the electric field distribution, which can further avoid electric field concentration and further alleviate the effect.

By disposing the second layer of semiconductor material on a portion of the cross section outside the second wound layer, corrosion of the filling gas such as SF6 gas after corona discharge in the insulating tube can be avoided to some extent.

Wherein the first semiconductor material layer and the second semiconductor material layer have different resistivities.

By providing the first semiconductor material layer and the second semiconductor material layer with different resistivities, the optimized combination can be performed according to the actual situation, and the utility model is stronger and the adaptation range is wider.

Wherein, the first semiconductor material layer and the second semiconductor material layer have the same thickness, and the first semiconductor material layer and the second semiconductor material layer have different widths.

In order to achieve the above object, another technical solution provided by the present invention is to provide a method for manufacturing a composite insulator, including:

Providing a core mold;

Forming a first wound layer on the mandrel;

Forming a first semiconductor material layer on a partial section outside the first wound layer;

Forming a second wound layer on the first wound layer and the first semiconductor material layer to form an insulating tube;

The shed is formed on the outer side of the insulating tube.

Wherein the step of forming the first semiconductor material layer on a partial cross section outside the first wound layer comprises:

A semiconductor coating is applied to a portion of the cross section outside the first wound layer to form a first layer of semiconductor material.

A semiconductor fiber yarn is wound on a partial section outside the first wound layer to form a first semiconductor material layer.

Wherein, the step of forming the first wound layer on the core mold comprises:

Forming a second layer of semiconductor material on the mandrel;

A first wound layer is formed on the core mold and the second layer of semiconductor material.

Wherein, after the step of forming the second wound layer on the first wound layer and the first semiconductor material layer, the method comprises:

A second layer of semiconductor material is formed on a portion of the cross section outside the second wound layer.

In order to achieve the above object, another technical solution provided by the present invention is to provide a composite sleeve including the above composite insulator.

Wherein, the composite sleeve further comprises a ground shield electrode, and the first semiconductor material layer corresponds to the position of the ground shield electrode.

The composite insulator is applied to the composite casing, which can improve the electric field distribution near the grounding shielding electrode, moderate the electric field concentration, avoid the electric corrosion phenomenon on the shed surface, prolong the service life of the insulating tube, and make the electric field tolerance of the composite casing stronger. Therefore, at the same voltage level, compared with the conventional composite bushing, the inner diameter of the composite insulator of the composite bushing can be reduced, and the wall thickness can also be reduced, thereby further reducing the production cost. The above composite insulator is applied to the composite bushing, and in some applications, the grounding shield electrode can be eliminated, and the composite bushing structure is more compact and miniaturized.

DRAWINGS

1 is a cross-sectional structural view showing a first embodiment of a composite insulator of the present invention;

2 is a cross-sectional structural view showing a second embodiment of the composite insulator of the present invention;

3 is a cross-sectional structural view showing a third embodiment of the composite insulator of the present invention;

Figure 4 is a cross-sectional structural view showing a fourth embodiment of the composite insulator of the present invention;

5 is a schematic flow chart of a first embodiment of a method for manufacturing a composite insulator of the present invention;

6 is a schematic flow chart of a second embodiment of a method for manufacturing a composite insulator of the present invention;

7 is a schematic flow chart of a third embodiment of a method for manufacturing a composite insulator of the present invention;

Figure 8 is a cross-sectional structural view showing a composite embodiment of the composite sleeve of the present invention.

Detailed ways

Specific embodiments of the invention are disclosed herein as required. However, it should be understood that the embodiments disclosed herein are merely exemplary of the invention and may be embodied in various forms. Therefore, the specific details disclosed herein are not to be construed as limiting, but rather as the basis of the claims, and as a representative basis for teaching the skilled in the art to apply the present invention differently in any suitable manner in practice. This includes the use of various features disclosed herein in conjunction with features that may not be explicitly disclosed herein.

As shown in FIG. 1, an embodiment of a composite insulator of the present invention comprises an insulating tube 104 and a shed 105 coated on the outside of the insulating tube 104. The insulating tube 104 includes a winding layer 102, a semiconductor material layer 103 and a winding layer 101, and a winding layer. 102 away from the shed 105, a layer of semiconductor material 103 is located between the wound layer 102 and the wound layer 101 and on a portion of the cross section outside the wound layer 102.

Specifically, the outer side of the composite insulator 10 is provided with a shed 105, which may be generally selected as a silicone rubber shed 105, and the silicone rubber shed 105 is integrally injection molded on the outside of the insulating tube 104.

A layup structure is disposed in the insulating tube 104, including the wound layer 102 and the wound layer 101. The semiconductor material layer 103 is disposed at an electric field concentration with respect to the cross-sectional area of the entire outer surface of the wound layer 102, and is usually wrapped around the outer circumference of the wound layer 102. The radius of the semiconductor material layer 103 is much smaller than the cross-sectional area of the entire outer surface of the wound layer 102, that is, on a portion of the cross section outside the wound layer 102.

The wound layer 101 is located outside the wound layer 102 and the semiconductor material layer 103, a portion of the wound layer 101 is in direct contact with the wound layer 102, and another portion is in direct contact with the semiconductor material layer 103, between the semiconductor material layer 103 and the wound layer 102 and the wound layer 101. With good interfacial bonding, the semiconductor material layer 103 has a certain thickness and width, and the order of thickness and width can be comprehensively considered in consideration of material properties, electric field strength, interface bonding and the like, and is selected according to actual conditions.

In the present embodiment, both the wound layer 102 and the wound layer 101 are wound by a glass fiber yarn impregnated with a base material.

The base material may be epoxy resin, vinyl ester resin or polyurethane resin. In this embodiment, the base material is an epoxy resin. During the molding process of the wound layer 102 and the wound layer 101, the epoxy resin glue and the glass fiber yarn undergo a series of physical and chemical changes to form an epoxy resin cured product. The oxy resin cured product forms an interface layer with excellent structure and performance between the epoxy resin glue and the glass fiber yarn, and the interface layer combines the glass fiber yarn and the epoxy resin into a whole, so that the epoxy resin and the glass fiber The wound layer made of yarn has good mechanical and electrical properties.

In a specific embodiment of the present embodiment, the semiconductor material layer 103 may be optionally formed by coating a semiconductor layer on the wound layer 102, and the semiconductor coating is a semiconductor silicone rubber coating containing a conductive filler.

The semiconductor silicone rubber coating layer 103 containing a conductive filler is mainly composed of a silicone rubber, and a conductive filler is added to have semiconductor characteristics, and a semiconductor material layer 103 having a certain thickness is formed on a partial cross section of the wound layer 102 by brushing. The process is relatively simple, and the interface between the semiconductor silicone rubber coating 103 and the epoxy resin-impregnated glass fiber yarn is relatively tight, thereby avoiding the problem of interface separation.

In another specific embodiment of the embodiment, the semiconductor material layer 103 is formed by winding a semiconductor fiber yarn on the wound layer 102, and the semiconductor fiber yarn is optionally immersed in the epoxy resin to be wound, so that the wound layer 101/ 102 and semiconductor material layer 103 are tightly bonded. The semiconductor material layer 103 is wound by the semiconductor fiber yarn, which is similar to the process of the original wound layer 101/102, and is easy to realize industrial production automation.

In this way, the semiconductor material layer 103 is disposed inside the insulating tube 104, which can improve the interference of the electric field on the composite insulator 10, improve the local electric field distribution, alleviate the electric field concentration, avoid the surface discharge of the shed 105 and be electrically etched, and avoid the insulating tube 104. The composite insulator 10 can be applied to post insulators, composite bushings or other high voltage power equipment with a reduced life after long-term use.

As shown in FIG. 2, a second embodiment of the composite insulator of the present invention includes an insulating tube 206 and a shed 205 coated on the outside of the insulating tube 206. The insulating tube 206 includes a wound layer 201, a wound layer 202, a semiconductor material layer 203, and a semiconductor. The material layer 204, the wound layer 201 is away from the shed 205, the semiconductor material layer 203 is located between the wound layer 201 and the wound layer 202 and is located on a partial section outside the wound layer 201, and the semiconductor material layer 204 is located on a partial section outside the wound layer 202. .

Specifically, the outer side of the composite insulator 20 is provided with a shed 205, which may be generally selected as a silicone rubber shed 205, and the silicone rubber shed 205 is integrally injection molded on the outside of the insulating tube 206. Both the wound layer 201 and the wound layer 202 are wound by a glass fiber yarn impregnated with a base material.

The semiconductor material layer 203 is disposed at an electric field concentration, and is generally wrapped around the outer circumference of the winding layer 201. The cross-sectional area of the semiconductor material layer 203 is much smaller than the cross-sectional area of the entire outer surface of the winding layer 201, that is, located outside the winding layer 201. Part of the section.

The semiconductor material layer 204 is located between the wound layer 202 and the shed 205, and the position of the semiconductor material layer 204 corresponds to the position of the semiconductor material layer 203, so that there are factors that interfere with the electric field distribution at different thicknesses of the insulating tube 206, and can be more Further avoiding electric field concentration and further alleviating the effect.

The material of the semiconductor material layer 203 and the semiconductor material layer 204 may be the same or different. For example, if the semiconductor material layer 203 is formed by brushing a semiconductor silicone rubber coating containing a conductive filler, the semiconductor material layer 204 may also be selected. The semiconductor silicon rubber coating layer containing the conductive filler is formed by brushing. Of course, the semiconductor material layer 204 can also be formed by brushing other semiconductor coatings; if the semiconductor material layer 203 is wound by the semiconductor fiber yarn Forming, the layer of semiconductor material 204 can also optionally be formed by winding a semiconductor fiber yarn.

In the present embodiment, the semiconductor material layer 203 and the semiconductor material layer 204 have different resistivities. Specifically, the semiconductor material layer 203 and the semiconductor material layer 204 have the same thickness, and the semiconductor material layer 203 and the semiconductor material layer 204 have different widths.

By providing the semiconductor material layer 203 and the semiconductor material layer 204 of different resistivities, compared with the case of providing a single semiconductor material layer, the optimal combination can be performed according to the actual situation, the electric field range that can be adjusted is wider, and the interference ability to the electric field is stronger. More practical and adaptable.

By disposing the semiconductor material layer 204 on a portion of the cross section outside the wound layer 202, corrosion of the filling gas such as SF6 gas after corona discharge in the insulating tube 206 can be avoided to some extent.

As shown in FIG. 3, a third embodiment of the composite insulator of the present invention includes an insulating tube 306 and a shed 305 wrapped on the outside of the insulating tube 306. The insulating tube 306 includes a wound layer 301, a wound layer 302, a semiconductor material layer 303, and a semiconductor. The material layer 304, the wound layer 301 is away from the shed 305, the semiconductor material layer 303 is located between the wound layer 301 and the wound layer 302 and is located on a portion of the cross section outside the wound layer 301, and the semiconductor material layer 304 is located on a portion of the inside of the wound layer 301. .

Specifically, the outer side of the composite insulator 30 is provided with a shed 305, which may be generally selected as a silicone rubber shed 305, and the silicone rubber shed 305 is integrally injection molded on the outside of the insulating tube 306. Both the wound layer 301 and the wound layer 302 are wound by a glass fiber yarn impregnated with a base material.

The semiconductor material layer 304 is used as an inner liner of the wound layer 301, and is bonded to a partial cross section of the inner side of the wound layer 301. The semiconductor material layer 303 is located on a portion of the outer side of the wound layer 301, and the positions of the two are corresponding to each other, and are generally disposed in the electric field concentration. At the office.

The material of the semiconductor material layer 303 and the semiconductor material layer 304 may be the same or different. For example, if the semiconductor material layer 303 is formed by brushing a semiconductor silicone rubber coating containing a conductive filler, the semiconductor material layer 304 may also be selected. The semiconductor silicon rubber coating layer containing the conductive filler is formed by brushing. Of course, the semiconductor material layer 304 can also be formed by brushing other semiconductor coatings; if the semiconductor material layer 303 is wound by the semiconductor fiber yarn Forming, the layer of semiconductor material 304 can also optionally be wound from a semiconductor fiber yarn.

The resistivity of the semiconductor material layer 303 and the semiconductor material layer 304 may be the same or different, and the semiconductor material layers of different resistivities can be optimally combined, and the electric field can be more controlled and adjusted, and the application range is wider.

As shown in FIG. 4, a fourth embodiment of the composite insulator of the present invention includes an insulating tube 407 and a shed 405 wrapped on the outside of the insulating tube 407. The insulating tube 407 includes a winding layer 401, a winding layer 402, a semiconductor material layer 403, and a semiconductor. The material layer 406 and the semiconductor material layer 404, the wound layer 401 is away from the shed 405, the semiconductor material layer 403 is located between the wound layer 401 and the wound layer 402 and is located on a portion of the outside of the wound layer 401, and the semiconductor material layer 406 is located at the wound layer 401. On a portion of the inner side, the layer of semiconductor material 404 is located on a portion of the cross section outside the wound layer 402.

The resistivity of the semiconductor material layer 406, the semiconductor material layer 403, and the semiconductor material layer 404 may be the same or different, and different resistivities may be arranged in a stepwise manner.

By alternately providing three layers of semiconductor material between the two layers of the wound layer, the utility model has stronger practicability and wider application range, can better alleviate electric field concentration, improve electric field distribution, and avoid electricity to the umbrella skirt 405. The etch damage extends the service life of the insulating tube 407.

As shown in FIG. 5, in the first embodiment of the method for manufacturing a composite insulator of the present invention, in order to facilitate the understanding of the following steps, in conjunction with FIG. 1 of the first embodiment of the composite insulator of the present invention, the manufacturing method comprises the following steps:

S11: providing a core mold;

Specifically, a mandrel for producing a composite insulator is provided, and the mandrel is fixed on a winding machine.

S12: forming a wound layer 102 on the core mold;

Specifically, the wound layer 102 is wound on the mandrel by a glass fiber yarn impregnated with epoxy resin at a certain angle.

S13: forming a semiconductor material layer 103 on a portion of the outer side of the wound layer 102;

Specifically, the step may specifically include:

S101: Applying a semiconductor coating on a portion of the outer portion of the wound layer 102 to form a semiconductor material layer 103, the semiconductor coating optionally including a semiconductor silicone rubber coating 103 containing a conductive filler.

Or S102: winding a semiconductor fiber yarn on a portion of the outer portion of the wound layer 102 to form a semiconductor material layer 103. The semiconductor fiber yarn may be a semiconductor fiber yarn impregnated with epoxy resin, and wound on the outer side of the wound layer 102. It can be well combined, has good interface characteristics, and is not easy to separate.

S14: forming a wound layer 101 on the wound layer 102 and the semiconductor material layer 103, thereby forming an insulating tube 104;

Specifically, the wound layer 101 is optionally wound on the wound layer 102 and the semiconductor material layer 103 by using a glass fiber yarn impregnated with epoxy resin glue at a certain angle, since the semiconductor material layer 103 is located on a portion of the outer side of the wound layer 102, During the molding of the wound layer 101, the portion of the glass fiber yarn impregnated with the epoxy resin directly contacts the wound layer 102, and partially contacts the layer of the semiconductor material 103, and the interface portion has good interfacial properties.

To this end, the glass fiber reinforced plastic insulating tube 104 containing the semiconductor material layer 103 is formed.

S15: The shed 105 is formed on the outer side of the insulating tube 104.

Specifically, a silicone rubber shed 105 can be integrally injection molded on the outside of the insulating tube 104.

In this way, the semiconductor material layer 103 is disposed inside the insulating tube 104, which can improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid the surface discharge of the shed 105 and be electrically etched, and avoid the long-term insulation of the insulating tube 104. The composite insulator can be applied to post insulators, composite bushings or other high voltage power equipment with reduced life after use.

As shown in FIG. 6, in a second embodiment of the method for manufacturing a composite insulator of the present invention, in order to facilitate the understanding of the following steps, in conjunction with FIG. 2 of the second embodiment of the composite insulator of the present invention, the manufacturing method comprises the following steps:

S21: providing a core mold;

S22: forming a wound layer 201 on the core mold;

Specifically, the wound layer 201 is wound on the mandrel by using a glass fiber yarn impregnated with epoxy resin glue at a certain angle.

S23: forming a semiconductor material layer 203 on a portion of the outer side of the wound layer 201;

The semiconductor material layer 203 is formed by coating a partial cross section of the semiconductor coating on the outside of the wound layer 201, and the semiconductor coating may optionally include a semiconductor silicone rubber coating 203 containing a conductive filler.

S24: forming a wound layer 202 on the wound layer 201 and the semiconductor material layer 203;

Specifically, the wound layer 202 is optionally wound on the wound layer 201 and the semiconductor material layer 203 by using a glass fiber yarn impregnated with epoxy resin glue at a certain angle.

S25: forming a semiconductor material layer 204 on a portion of the outer side of the wound layer 202, thereby forming an insulating tube 206;

The layer of semiconductor material 204 is formed by a partial cross-section of the semiconductor coating on the outside of the wound layer 202, and the semiconductor coating may optionally include a semi-conductive silicone rubber coating 204.

The location of the layer of semiconductor material 204 corresponds to the location of the layer of semiconductor material 203, typically at the concentration of the electric field.

To this end, a glass fiber reinforced plastic insulating tube 206 provided with two layers of semiconductor material is formed.

S26: The shed 205 is formed on the outer side of the insulating tube 206.

Specifically, a silicone rubber shed 205 can be integrally injection molded on the outside of the insulating tube 206.

By this manufacturing method, factors which interfere with the electric field distribution at different thicknesses of the insulating tube 206 can further avoid electric field concentration and further alleviate the effect.

As shown in FIG. 7, in the third embodiment of the method for manufacturing a composite insulator of the present invention, in order to facilitate the understanding of the following steps, in conjunction with FIG. 3 of the third embodiment of the composite insulator of the present invention, the manufacturing method includes the following steps:

S31: providing a core mold;

S32: forming a semiconductor material layer 304 on the core mold;

A layer of semiconductor material 304 is wound around a portion of the mandrel from a semiconductor fiber yarn impregnated with a matrix material, the layer of semiconductor material 304 surrounding the mandrel and covering a portion of the cross-section of the outer surface of the mandrel. The base material is optional epoxy resin, and the semiconductor material layer 304 has a certain thickness and width, and the thickness and width are selected according to actual conditions.

S33: The wound layer 301 is formed on the core mold and the semiconductor material layer 304.

Specifically, the glass fiber yarn impregnated with the epoxy resin is optionally wound on the mandrel to form the wound layer 301 at a certain angle, and the wound layer 301 also covers the semiconductor material layer 304.

S34: forming a semiconductor material layer 303 on a portion of the outer side of the wound layer 301;

On a portion of the outer side of the wound layer 301, that is, at a position corresponding to the semiconductor material layer 303, the semiconductor fiber yarn impregnated with the base material is wound and formed, and the base material may be epoxy resin, which is good with the wound layer 301. Interface integration.

S35: forming a wound layer 302 on the wound layer 301 and the semiconductor material layer 303, thereby forming an insulating tube 306;

Specifically, the wound layer 302 is wound around the wound layer 301 and the semiconductor material layer 303 by a glass fiber yarn impregnated with epoxy resin at a certain angle.

To this end, a glass fiber reinforced plastic insulating tube 306 provided with two layers of semiconductor material is formed.

S36: The shed 305 is formed on the outer side of the insulating tube 306.

Specifically, a silicone rubber shed 305 can be integrally injection molded on the outside of the insulating tube 306.

By this manufacturing method, there are factors that interfere with the electric field distribution at different thicknesses of the insulating tube 306, and the electric field concentration can be further avoided, and the mitigating effect is further improved.

An embodiment of the composite sleeve of the present invention includes the composite insulator of each of the above embodiments.

In a specific embodiment, as shown in FIG. 8, the composite sleeve 500 includes a composite insulator 50 and a ground shield electrode 51. The composite insulator 50 includes an insulating tube 504 and an umbrella skirt 505 wrapped around the outside of the insulating tube 504. The tube 504 includes a wound layer 501, a semiconductor material layer 503, and a wound layer 502, the wound layer 501 being away from the shed, and the semiconductor material layer 503 being located between the wound layer 501 and the wound layer 502 and on a portion of the cross section outside the wound layer 501.

The semiconductor material layer 503 in the composite insulator 50 corresponds to the position of the ground shield electrode 51, can alleviate the electric field concentration, avoids the surface discharge of the corresponding silicone rubber umbrella skirt 505, and is electrically etched, thereby avoiding the long-term insulation life of the insulating tube 504 at high field strength. At the same time, since the electric field strength at the same position decreases, the inner diameter of the insulating tube 504 and the thickness of the tube wall can be reduced, and the requirement of the composite sleeve 500 can still be satisfied. In the case of the same voltage level, the composite sleeve 500 Corresponding composite insulator 50 has a reduced inner diameter and wall thickness, reduced material loss, can significantly reduce production costs, and is advantageous for the realization of miniaturized composite casing.

In some applications, the semiconductor material layer 503 is electrically contacted with the lower flange 52 of the composite sleeve 500, which can replace the role of the ground shield electrode 51, thereby eliminating the arrangement of the ground shield electrode 51, making the composite sleeve structure more compact and Miniaturize, save space and reduce costs.

It should be noted that the point of protection of the composite insulator of the present invention lies in the staggered arrangement of the wound layer and the semiconductor material layer, the number of layers of the wound layer, and the number of layers of the semiconductor material layer are set according to actual conditions, and are not limited to the above embodiments. .

The technical contents and technical features of the present invention have been disclosed above, however, it will be understood that those skilled in the art can make various changes and modifications to the above-described structures and materials, including separately disclosed or claimed herein. Combinations of technical features obviously include other combinations of these features. These variations and/or combinations are all within the technical scope of the present invention and fall within the scope of the claims of the present invention.

Claims

A composite insulator comprising an insulating tube and a shed covering the outside of the insulating tube, the insulating tube comprising a first wound layer, a first semiconductor material layer and a second wound layer, the first The wound layer is away from the shed, and the first layer of semiconductor material is located between the first wound layer and the second wound layer and on a portion of the cross section outside the first wound layer.
The composite insulator of claim 1 wherein said first layer of semiconductor material is formed by brush coating of said first wound layer by a semiconductor coating.
The composite insulator of claim 2 wherein said semiconducting coating is a semiconducting silicone rubber coating comprising a conductive filler.
The composite insulator of claim 1 wherein said first layer of semiconductor material is wound from said semiconductor fiber yarn on said first wound layer.
The composite insulator according to claim 1, wherein said first wound layer and said second wound layer are each wound by glass fiber yarn impregnated with a base material.
The composite insulator according to claim 1, wherein said insulating tube further comprises a second layer of semiconductor material, said second layer of semiconductor material being located on a portion of said inner side of said first wound layer, or at said Part of the cross section outside the second wound layer.
The composite insulator of claim 6 wherein said first layer of semiconductor material and said second layer of semiconductor material have different electrical resistivities.
The composite insulator according to claim 7, wherein said first semiconductor material layer and said second semiconductor material layer have the same thickness, said first semiconductor material layer and said second semiconductor material layer having a width different.
A method of manufacturing a composite insulator, comprising:

Providing a core mold;

Forming a first wound layer on the mandrel;

Forming a first semiconductor material layer on a partial cross section outside the first wound layer;

Forming a second wound layer on the first wound layer and the first semiconductor material layer to form an insulating tube;

An shed is formed on the outer side of the insulating tube.
The manufacturing method according to claim 9, wherein the step of forming the first semiconductor material layer on a partial section outside the first wound layer comprises:

A semiconductor coating is applied to a portion of the outer portion of the first wound layer to form the first layer of semiconductor material.
The manufacturing method according to claim 9, wherein the step of molding the first semiconductor material layer on a partial cross section outside the first wound layer comprises:

A semiconductor fiber yarn is wound on a partial section outside the first wound layer to form the first semiconductor material layer.
The manufacturing method according to claim 9, wherein the step of forming the first wound layer on the mandrel comprises:

Forming a second layer of semiconductor material on the mandrel;

Forming a first wound layer on the core mold and the second layer of semiconductor material.
The manufacturing method according to claim 9, wherein the step of forming the second wound layer on the first wound layer and the first semiconductor material layer comprises:

A second layer of semiconductor material is formed on a portion of the cross section outside the second wound layer.
A composite sleeve comprising the composite insulator of any of claims 1-8.
The composite bushing of claim 14 further comprising a ground shield electrode, said first layer of semiconductor material corresponding to a location of said ground shield electrode.