WO2019104957A1 - 一种电子设备 - Google Patents

一种电子设备 Download PDF

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Publication number
WO2019104957A1
WO2019104957A1 PCT/CN2018/087798 CN2018087798W WO2019104957A1 WO 2019104957 A1 WO2019104957 A1 WO 2019104957A1 CN 2018087798 W CN2018087798 W CN 2018087798W WO 2019104957 A1 WO2019104957 A1 WO 2019104957A1
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WO
WIPO (PCT)
Prior art keywords
preset
identity
identification information
information
electronic device
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PCT/CN2018/087798
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English (en)
French (fr)
Inventor
黄建东
Original Assignee
上海耕岩智能科技有限公司
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Application filed by 上海耕岩智能科技有限公司 filed Critical 上海耕岩智能科技有限公司
Publication of WO2019104957A1 publication Critical patent/WO2019104957A1/zh
Priority to US16/886,763 priority Critical patent/US11533180B1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/40—Network security protocols
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/32—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials

Definitions

  • the present invention relates to the field of security authentication, and in particular to an electronic device.
  • a Universal Integrated Circuit Card is a general term for smart cards with physical characteristics. If applied to a terminal device of a broadband mobile network, the UICC can serve as a removable smart card in the terminal for storing user information, an authentication key (including a public key and a key), and a payment method.
  • the ISO/IEC Internationalization Standards Organization has developed a series of smart card security feature protocols to ensure secure access to UICC files by terminal devices of broadband mobile network users.
  • UICC introduces the concept of a multi-application platform and implements a multi-channel mechanism in which multiple logical applications run simultaneously.
  • the UICC can include multiple logic modules, such as a Subscriber Identity Module (SIM), a Universal Subscriber Identity Module (USIM), and an IP Multimedia Service Identity Module (ISIM). Other non-telecom application modules such as electronic signature authentication and electronic wallet.
  • SIM Subscriber Identity Module
  • USIM Universal Subscriber Identity Module
  • ISIM IP Multimedia Service Identity Module
  • Other non-telecom application modules such as electronic signature authentication and electronic wallet.
  • the UICC has been applied to application modules related to user privacy such as electronic signature authentication, electronic wallet, etc. in the terminal device, and the security feature protocol of the ISO/IEC international standard organization guarantees secure access of the terminal device to the UICC file, More and more popular mobile terminal identification does not apply.
  • fingerprint recognition, face recognition, etc. the current method is still implemented by relying on the sensor components and application programs configured by the terminal.
  • identification functions are mainly for unlocking the terminal device, or relatively consider information security.
  • the unlocking function is implemented on the application, and the application having the identification function or the hardware processor is only the identification image (such as fingerprint information) that the user presses the input, and the software or hardware configured by the terminal device is stored in the terminal.
  • the image pre-set fingerprint image
  • cloud servers For the back-end computing processing platform.
  • the cloud computing server generally performs security verification on the legitimacy of the terminal device in order to ensure that the terminal device that transmits the physiological feature information is a registered terminal device.
  • the cloud platform after the user sends an authentication request to the financial transaction cloud platform, the cloud platform usually sends a security verification code to the same terminal device or a different terminal device, prompting the user to input a verification code to improve the financial The security of the transaction. Even so, the cloud verification platform cannot improve the user who operates the terminal device.
  • the inventors provide an electronic device including a main circuit board, a processor, a sensor device, and a storage medium; the main circuit board is provided with a universal integrated circuit card slot, the universal A universal integrated circuit card is disposed in the integrated circuit card slot; the sensor device is coupled to the processor; the storage medium stores an executable computer program, and the computer program is executed by the processor to implement the following steps:
  • the step of “receiving preset identification information and writing the preset identification information to the universal integrated circuit card” includes: receiving the preset identity collected by the external identity sensor device. Identifying information and writing the preset identification information to a universal integrated circuit card, the external identity sensor device being a sensor device that is disposed independently of the electronic device.
  • implementing the step of “receiving preset identification information and writing the preset identification information into the universal integrated circuit card” includes: receiving a preset collected by the sensor component of the electronic device Identifying the information and writing the preset identification information to a universal integrated circuit card.
  • the sensor component includes any one or more of a common camera, an infrared camera, and a microphone
  • the preset identification information includes any one of face information, eyeball information, iris information, and voice information. A variety.
  • the preset identification information is converted into a preset identity information summary by using a cryptographic hash function, and the preset identity identification information is stored in a general-purpose integrated circuit card in the form of a preset identity identification information summary.
  • the number of the sensor components is multiple, which are respectively used to collect different preset identification information; when the computer program is executed by the processor, the following steps are implemented:
  • the authentication key is stored in an integrated circuit card, and the authentication key includes a public key and a private key;
  • the cryptographic hash function is used to convert the identity information to be authenticated into a digest of the identity information to be authenticated; and the RSA encryption algorithm public key is used to encrypt the identity information to be authenticated, and the encrypted information to be authenticated is obtained.
  • the authentication encrypted information includes an encrypted identity information to be authenticated;
  • Obtain a private key in the universal integrated circuit card use the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information, obtain a preset identity identification information summary, and compare the preset identity identification information summary with the identity information to be authenticated, if If the match is successful, the identity authentication succeeds, otherwise the authentication fails.
  • the preset encryption After receiving the preset identification information, randomly generating the first random digital string and the first random padding blank, where the first random padding blank is a character randomly generated and filled in the preset identity information digest; the preset encryption The information further includes the encrypted first random digital string and the first random filled blank;
  • the identity information to be authenticated After receiving the identity information to be authenticated, randomly generating a second random number string and a second random padding blank, where the second random padding blank is a character randomly generated and filled in the digest of the identity information to be authenticated;
  • Receiving an encryption level setting instruction setting an encryption level of the electronic device, where the encryption level includes a first encryption level, a second encryption level, and a third encryption level;
  • the condition for determining the identity authentication success is a preset identity identification information digest and a to-be-authenticated identity information digest, a first random digit string and a second random digit string, a first random padding blank and The three random fill blanks are all successfully matched;
  • the condition for determining that the identity authentication succeeds is that the preset identity information summary is successfully matched with the identity to be authenticated, and the first random number string and the second random number word, the first random padding Any one of the blank and the second random fill blank is successfully matched;
  • the condition for determining the identity authentication success is that the preset identity information digest is successfully matched with the identity information to be authenticated.
  • the invention stores the user's physiological characteristic information in the UICC card, and does not need to perform verification by the cloud server in the identification and authentication process, but acquires the preset identification information in the UICC card through the processor, and collects the same with the sensor component.
  • the identity information to be authenticated is compared to implement the identity authentication process. Since the identity information is collected in real time and authenticated in real time, it can ensure that the verification operator of the device is the legal registered user, which effectively improves the security of the authentication process.
  • FIG. 1 is a schematic diagram of an electronic device according to an embodiment of the present invention.
  • FIG. 2 is a circuit diagram of a pixel detection area according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a photodetecting film according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a photodetecting film according to another embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a structure of a source and a drain according to an embodiment of the present invention.
  • FIG. 6 is a schematic view showing a distribution mode of an optical device according to an embodiment of the present invention.
  • FIG. 7 is a flow chart of a method of fabricating a photodetecting film according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a photodetecting film according to an embodiment of the present invention.
  • FIG. 9 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention.
  • FIG. 10 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention.
  • FIG. 11 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention.
  • FIG. 12 is a flow chart showing the steps when a computer program is executed by a processor according to an embodiment of the present invention.
  • Figure 13 is a flow chart showing the steps when a computer program is executed by a processor according to another embodiment of the present invention.
  • 101 touch screen or cover glass
  • 102 display unit
  • 103 low refractive index glue
  • 105 flexible circuit board
  • 106 main circuit board
  • 107 universal integrated circuit card slot
  • 108 universal integrated circuit card.
  • the electronic device is a device with a touch display screen, such as a smart mobile device such as a mobile phone, a tablet computer, a personal digital assistant, or a personal computer.
  • Electronic equipment such as computers for industrial equipment.
  • the electronic device includes a main circuit board 106, a processor, a sensor device and a storage medium; the main circuit board 106 is provided with a universal integrated circuit card slot 107, and the universal integrated circuit card slot 107 is provided with universal integration.
  • the processor is an electronic component having a data processing function, such as a central processing unit (CPU), a digital signal processor (DSP), or a system on chip (SoC).
  • the storage medium is an electronic component having a data storage function, including but not limited to: RAM, ROM, magnetic disk, magnetic tape, optical disk, flash memory, USB flash drive, mobile hard disk, memory card, memory stick, and the like.
  • the storage medium stores an executable computer program, and when the computer program is executed by the processor, the following steps are performed: receiving preset identification information, and writing the preset identification information to a universal integrated circuit card; receiving the identity
  • the authentication request and the identity information to be authenticated collected by the sensor component obtain the preset identity identification information from the universal integrated circuit card, and compare the identity information to be authenticated with the corresponding preset identity identification information. The authentication succeeded, otherwise the authentication failed.
  • the processor can acquire the preset identification information in the UICC card and compare it with the identity information to be authenticated. Identification and authentication process. Because the identity information is collected in real time and authenticated in real time, it can ensure that the verification operator of the device is the legally registered user. Compared with the method of authentication in the cloud server, the security of the authentication process is effectively improved.
  • the sensor component includes any one or more of a common camera, an infrared camera, and a microphone
  • the preset identity identification information includes any of face information, eyeball information, iris information, and voice information.
  • the ordinary camera can be used to collect face information and eyeball information
  • the infrared camera can be used to collect iris information
  • the microphone can be used to collect voice information.
  • Users can turn on different sensor devices on the electronic device to collect identity information according to actual needs. The setting of various sensor components provides users with more choices, which effectively improves the user's sensory experience.
  • implementing the step of “receiving preset identification information and writing the preset identification information to the universal integrated circuit card” includes: receiving an external identity sensor component to collect The preset identification information is written to the universal integrated circuit card, and the external identity sensor is a sensor device that is independent of the electronic device.
  • the step of “receiving preset identification information and writing the preset identification information into the universal integrated circuit card” includes: receiving the sensor component of the electronic device. The preset identification information is collected, and the preset identification information is written into a universal integrated circuit card.
  • the input of the preset identification information can be collected by the sensor component on the electronic device (such as a camera integrated with the electronic device, a microphone, etc.), or can be dependent on an external identity sensor component (such as an external device). Camera, external microphone, etc.) to complete, so that more application scenarios.
  • the electronic device further includes a display unit 102 disposed above the main circuit board 106, and the display unit 102 is a display screen for driving and transmitting data with an active array thin film transistor.
  • the display screen includes an AMOLED display or a micro LED display.
  • the light transmittance of the display screen is greater than 3%, so that during the light detection function, the light flux of the light passing through the display screen is sufficiently large, and then received by the light detecting device disposed under the display screen, thereby realizing light detection.
  • a touch screen or cover glass 101 is further disposed above the display unit 102 to meet the requirements of different end products.
  • the display unit 102 is coupled to the main circuit board 106 via a flexible circuit board 105 that includes a chip having an image signal reading and recognition function.
  • the chip for the identification function includes a fingerprint image reading chip, a fingerprint recognition algorithm chip, and the like, and the chip type is an ADAS1256 chip of Analog Devices.
  • Flexible circuit boards are also called flexible circuit boards and flexible circuit boards. Referring to the soft board or FPC, the flexible circuit board has the advantages of high wiring density, light weight, thin thickness, less wiring space limitation, and high flexibility compared with ordinary hard resin circuit boards. The setting of the flexible circuit board can make the overall light detecting device thinner and lighter, and meet the market demand.
  • the preset identification information is converted into a preset identity information summary by using a cryptographic hash function, and the preset identity identification information is stored in a general-purpose integrated circuit card in the form of a preset identity identification information summary.
  • the cryptographic hash function which is a Hash Function (also directly transliterated as "hash"), converts an input of arbitrary length (also called pre-map) into a fixed-length output through a hashing algorithm. Is the hash value.
  • This conversion is a compression map, that is, the space of the hash value is usually much smaller than the input space, and different inputs may be hashed to the same output.
  • the cryptographic hash function is a function of compressing a message of any length into a fixed length message digest. The conversion can compress the storage space of the preset identification information to preset the identification information. Better storage.
  • the number of the sensor devices is multiple, respectively for collecting different preset identification information; when the computer program is executed by the processor, the following steps are implemented: receiving the collected by the plurality of sensor devices Different preset identification information is used to convert the collected plurality of preset identification information into a preset identity identification information summary by using a cryptographic hash function. In other embodiments, when the computer program is executed by the processor, the following steps are performed: receiving a plurality of preset identification information collected by the same sensor component, and using the cryptographic hash function to collect the plurality of preset identities. The identification information is converted into a summary of the preset identification information.
  • the preset identification information may be multi-segment voice information, and the user may sequentially input multiple pieces of different voice information through the microphone of the electronic device, and the processor receives multiple pieces of voice information (ie, multiple preset identification information collected by the same sensor device).
  • the collected multi-segment voice information is converted into a voice summary by using a cryptographic hash function.
  • the plurality of preset identification information includes a certain piece of voice information and face information
  • the face information and the voice information are converted into corresponding identity abstracts by using a cryptographic hash function.
  • the preset identification information is multiple, which provides users with more choices on the one hand, and effectively improves the security and accuracy of identity information authentication on the other hand.
  • FIG. 12 is a flow chart showing the steps when a computer program according to an embodiment of the present invention is executed by a processor.
  • the computer program is also executed by the processor to implement the following steps:
  • step S1201 the process proceeds to step S1201 to store the authentication key in the integrated circuit card, where the authentication key includes a public key and a private key;
  • step S1202 the method proceeds to step S1202 to obtain the public key in the universal integrated circuit card, and uses the RSA encryption algorithm to apply the public key to encrypt the preset identification information summary to obtain preset encrypted information, where the preset encrypted information includes the encrypted preset identity.
  • Identification information summary ;
  • the identity information to be authenticated is converted into a summary of the identity information to be authenticated by using a cryptographic hash function; and the abstraction of the identity information to be authenticated is encrypted by using the RSA encryption algorithm public key to obtain the identity to be authenticated. Encrypting information, the encrypted information to be authenticated includes an encrypted identity information to be authenticated;
  • step S1204 proceeding to step S1204 to obtain a private key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information to obtain a preset identity identification information summary;
  • step S1205 the preset identity identification information digest is compared with the digested identity information digest. If the matching is successful, the process proceeds to step S1207, and the identity authentication succeeds. Otherwise, the process proceeds to step S1206, and the authentication fails.
  • public key encryption and private key decryption are adopted. Since the public key and the private key are stored in the UICC card, the extraction security of extracting the preset identification information summary in the UICC card is greatly improved.
  • the algorithm for encrypting or decrypting the digest is not limited to the RSA algorithm, and may be other existing encryption and decryption algorithms.
  • the first random digit string and the first random padding blank are randomly generated.
  • the first random padding blank is a character that is randomly generated and filled in the preset identity information digest; the preset encryption information further includes the encrypted first random digit string and the first random padding blank; and then proceeds to step S1302.
  • the second random padding string and the second random padding blank are randomly generated, and the second random padding blank is a character randomly generated and filled in the digest of the identity information to be authenticated; and then proceeds to step S1303 to obtain a universal
  • the private key in the integrated circuit card uses the RSA encryption algorithm to decrypt the preset encrypted information by using the private key to obtain the first random digital string and the first random filled blank; then proceeds to step S1304 to compare the first random digital string with the first Whether the two random number string, the first random padding blank and the second random padding blank match successfully, if yes, the process proceeds to step S1306, the identity authentication is successful, otherwise the process proceeds to step S1305, and the authentication fails.
  • the first random digit string and the second random digit string are also required.
  • the first random padding blank matches one or more of the second random padding blanks, thereby effectively improving the security of the identity information authentication.
  • the computer program is executed by the processor to implement the following steps:
  • Receiving an encryption level setting instruction setting an encryption level of the electronic device, where the encryption level includes a first encryption level, a second encryption level, and a third encryption level;
  • the condition for determining the identity authentication success is a preset identity identification information digest and a to-be-authenticated identity information digest, a first random digit string and a second random digit string, a first random padding blank and The three random fill blanks are all successfully matched;
  • the condition for determining that the identity authentication succeeds is that the preset identity information summary is successfully matched with the identity to be authenticated, and the first random number string and the second random number word, the first random padding Any one of the blank and the second random fill blank is successfully matched;
  • the condition for determining the identity authentication success is that the preset identity information digest is successfully matched with the identity information to be authenticated.
  • the degree of encryption from high to low is the first encryption level, the second encryption level, and the third encryption level.
  • applications that require strong encryption such as software involving financial transactions, trade secret data, and online payment passwords
  • users can set the encryption level of these applications to the first encryption level so that only the identity authentication process can be used.
  • the preset identity identification information digest and the identity to be authenticated identity digest, the first random digit string and the second random digit string, the first random padding blank and the second random padding blank are all successfully matched.
  • the user can set the encryption level of the application to the second encryption level or the third encryption level according to their own needs.
  • the electronic device further includes a photo detecting device
  • the display unit is provided with an identification area
  • the photo detecting device is disposed under the identification area
  • the display unit 102 is under
  • the end face and the upper end face of the photodetecting device may be bonded by a low refractive index adhesive having a refractive index of less than 1.4.
  • the low refractive index adhesive can act as a bonding function, so that the light detecting film is fastened to the bottom surface of the display unit, and is not easy to be sent off; on the other hand, a low refractive index glue is used, and when the light is transmitted through the display unit, the light is detected.
  • the portion of the photodetecting film that is in contact with the low refractive index adhesive is usually The refractive index is 1.4 or more, so that the light can be incident on the photodetecting film in the vertical direction as much as possible after being refracted at the position of the low refractive index adhesive, which can effectively improve the photoelectric conversion rate.
  • the low refractive index adhesive is an organic compound adhesive having a carbon-fluorine bond.
  • the preset identification information may also be blood volume information, fingerprint information, or the like.
  • blood volume information when light passes through the skin of the human body and enters other tissues of the human body below the body surface, some light will be absorbed, some light will be reflected, scattered, etc., and the change of the light path depends on The structure of the tissue below the skin. In general, human blood can absorb more light than the surrounding tissue, so when the light signal encounters more blood, the less light signal is reflected back.
  • the blood volume information corresponding to the user can be obtained, and according to the blood volume information corresponding to the user, other preset identification information of the user (such as blood pressure index and body fat content) can be obtained by conversion. , blood oxygen saturation, cardiopulmonary index, electrocardiogram, etc.).
  • the body part of the pre-acquired identification information is illuminated by a preset array of pixels on the display unit, and the light detecting device receives the reflected light signal to obtain Identification information.
  • the computer program may cooperatively encode the array pixel groups on the display unit, illuminate the body part with the encrypted combined light source, and receive the light information fed back by the body part.
  • the preset array pixel combination may be a pixel array in which a certain portion of the display unit is arranged in a preset pattern, and the preset pattern may be set according to actual needs. Compared with the manner in which all the array pixels on the display unit emit light sources, the above method can further improve the security of information collection.
  • the photodetecting device is a TFT image sensing array film, including MxN pixel detecting regions, and each pixel detecting region is correspondingly provided with one or more thin film transistors to form a set of scan driving and a pixel film circuit for transmitting data and a light detecting film;
  • the light detecting film comprises a photodiode or a photosensitive transistor.
  • the basic circuit composition of each pixel detecting area is as shown in FIG. 2 .
  • the photodiode is a main sensor device for forming a photodetecting film
  • the gate scan line operates the thin film transistor (TFT) in an open mode at a fixed frame rate, and when the photo detecting device detects the optical signal,
  • the thin film transistor is turned on to transfer the capacitor voltage data to the read chip.
  • TFT thin film transistor
  • the photodetecting device is a TFT image sensing array film, and the light detecting wavelength range includes a visible light band or an infrared light band.
  • the TFT image sensing array film is composed of MXN photodetecting films, and each photo detecting film correspondingly detects one pixel. Therefore, the TFT image sensing array film can be used to detect MXN pixels to form a corresponding image.
  • each photodetecting film there are several implementations:
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the TFT image sensing array film is an array formed by photodiodes, and the array formed by the photodiodes includes a photodiode sensing region.
  • Existing liquid crystal display (LCD) panels or organic light emitting diode (OLED) display panels are all driven by a TFT structure to scan a single pixel to realize the display function of the pixel array on the panel.
  • the main structure for forming the TFT switching function is a semiconductor field effect transistor (FET), and the well-known semiconductor layer material mainly includes amorphous silicon, polycrystalline silicon, indium gallium zinc oxide (IGZO), or an organic compound mixed with carbon nano materials. .
  • the TFT photodetecting diode (ie, the photodiode) has been produced by the TFT array preparation method.
  • the specific structure of the existing photodiode reference may be made to the description of the structure of the photodetecting device in US Pat. No. 6,943,070 B2 and the Patent No. CN204808361U of the People's Republic of China.
  • the production process of the TFT image sensing array film is different from that of the display panel TFT in that the pixel opening area of the display panel is changed to the light sensing area in the production process.
  • the TFT can be prepared by using a thin glass substrate or a high temperature resistant plastic material as described in US Pat. No. 6,943,070 B2.
  • the existing TFT image sensing array film is susceptible to reflection or refraction of visible light emitted by ambient light or display pixels, causing optical interference, which seriously affects the TFT image sensing array film embedded under the display panel.
  • Signal-to-Noise Ratio SNR
  • the photodetecting film of the present invention is further improved, so that the improved TFT image sensing array film can detect and reflect the body part of the user. Infrared signal.
  • SNR Signal-to-Noise Ratio
  • the photodiode layer includes a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked from top to bottom, and the i-type semiconductor layer is micro A crystalline silicon structure or an amorphous silicon germanium structure.
  • the microcrystalline silicon structure is a semiconductor layer formed by chemical vapor deposition of silane and hydrogen. The crystallinity of the microcrystalline silicon is greater than 40%, and the forbidden band width is less than 1.7 eV.
  • the amorphous silicon germanium structure is an amorphous semiconductor layer formed by chemical vapor deposition of silane, hydrogen and germane, and has a forbidden band width of less than 1.7 eV.
  • Band gap refers to the width of a band gap (in electron volts (eV)).
  • the energy of electrons in a solid cannot be continuously valued, but some discontinuous energy bands.
  • the existence of free electrons, the energy band in which free electrons exist is called the conduction band (which can conduct electricity). If the bound electrons become free electrons, they must obtain enough energy to jump from the valence band to the conduction band.
  • the minimum value of this energy is the forbidden band width. .
  • the forbidden band width is an important characteristic parameter of the semiconductor, and its size is mainly determined by the band structure of the semiconductor, that is, the crystal structure and the bonding property of the atoms.
  • the forbidden band width of ruthenium is about 0.66 ev.
  • the silane contains yttrium element. When the yttrium element is doped, the forbidden band width of the i-type semiconductor layer is decreased. When less than 1.7 eV is satisfied, The i-type semiconductor layer can receive optical signals in the wavelength range of visible light to infrared light (or near-infrared light).
  • concentration of GeH4 deposited by chemical weather the operating wavelength range of a photodiode containing an amorphous or microcrystalline silicon germanium structure can be extended to a wavelength range of 600 nm to 2000 nm.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the amorphous silicon photodiode can also be formed by stacking a p-type/i-type/n-type structure with a double junction or more.
  • the first junction p-type/i-type/n-type material of the photodiode is still an amorphous silicon structure, and the p-type/i-type/n-type material above the second junction layer may be a microcrystalline structure, a polycrystalline structure or a doped Compound materials that extend the range of photosensitive wavelengths.
  • a plurality of sets of p-type/i-type/n-type structures can be stacked on top of each other to realize a photodiode structure.
  • the photodiode structure described in Embodiment 1 is used. .
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • the p-type semiconductor layer included therein may be a multilayer structure of more than two layers.
  • the p-type semiconductor layer has a three-layer structure, and includes a first p-type semiconductor layer (p1 layer), a second p-type semiconductor layer (p2 layer), and a third p-type semiconductor layer (p3 layer) from top to bottom.
  • the p1 layer can adopt an amorphous structure and is heavily doped with boron (the boron concentration is more than twice that of the standard process); p2 and p3 adopt a microcrystalline structure, and the normal doping boron (doped according to the standard process concentration) depends on
  • the thinned p2 layer and p3 layer reduce the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, thereby increasing the photoelectric conversion rate; on the other hand, the p2 layer and the p3 layer are doped with normal boron. It is possible to effectively avoid deterioration of the built-in potential due to heavy doping of the p1 layer.
  • the p-type semiconductor layer includes a multilayer structure which is other layers, it is similar here, and will not be described herein.
  • the n-type semiconductor layer may also be a multilayer structure of more than two layers.
  • the n-type semiconductor layer has a three-layer structure, and includes a first n-type semiconductor layer (n1 layer), a second n-type semiconductor layer (n2 layer), and a third n-type semiconductor layer (n3 layer) from top to bottom.
  • the n3 layer can adopt an amorphous structure and is heavily doped with phosphorus (the phosphorus content is more than twice that of the standard process); n1 and n2 adopt a microcrystalline structure, and the normal doped phosphorus (according to the standard production process) depends on the thickness reduction
  • the n1 layer and the n2 layer reduce the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, thereby improving the photoelectric conversion rate; on the other hand, the normal phosphorus doping of the n1 layer and the n2 layer can effectively avoid The built-in potential is degraded due to heavy doping of the n3 layer.
  • the n-type semiconductor layer includes a multilayer structure which is other layers, it is similar here, and will not be described again here.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • This embodiment is a further improvement of the first or second or third embodiment, as shown in FIG. 6( a ), specifically including: providing a first optical device on an upper end surface of the p-type semiconductor layer, the first An optical device is used to reduce the reflectance of light on the upper end surface of the p-type semiconductor layer or to reduce the angle of refraction of the light in the p-type semiconductor layer to increase the amount of light incident.
  • the first optical device is disposed on the upper end surface of the uppermost p-type semiconductor layer.
  • the first optical device includes a photonic crystal structure or a microlens array structure in which the refractive index changes periodically, or a diffuse scattering structure in which the refractive index changes non-periodically.
  • the refractive index of the first optical device is smaller than the refractive index of the p-type semiconductor layer, so that the incident angle of the light after the first optical device is refracted is smaller than the angle of refraction, that is, the light is incident into the p-type as close as possible to the vertical direction.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • This embodiment is a further improvement for the first or second or third or fourth embodiment.
  • the lower end surface of the n-type semiconductor layer is further provided with a second optical device.
  • the second optical device is for increasing the multiple reflectance of light at the lower end surface of the n-type semiconductor layer.
  • the multiple reflectance means that the light enters the i-type semiconductor layer after being reflected by the second optical device, and is again absorbed by the i-type semiconductor layer, and the absorbed light is again reflected by the second optical device and enters the i-type semiconductor layer. This is repeated several times to increase the photoelectric conversion ratio of the i-type semiconductor layer.
  • the second optical device is disposed on the lower end surface of the lowermost one of the n-type semiconductor layers.
  • the second optical device includes a photonic crystal structure whose refractive index changes periodically, or a diffuse scattering structure whose refractive index changes non-periodically, and the refractive index of the second optical device is smaller than that of the n-type semiconductor layer .
  • the light can be reflected as much as possible on the lower end surface of the n-type semiconductor layer, so that the reflected light is again absorbed by the i-type semiconductor layer, thereby appropriately amplifying the signal in the wavelength range of light that can be absorbed by the i-type semiconductor layer. Increase the photoelectric flow rate in this wavelength range.
  • the TFT image sensing array film (ie, the photodetecting device) is an array formed by a photosensitive electroplating tube, and the array formed by the photo transistor comprises a photosensitive electromagnet sensing region.
  • the photosensitive transistor sensing region is provided with a photosensitive thin film transistor including a gate 1, a source 2, a drain 3, an insulating layer 4, and a light absorbing semiconductor layer 5; the photosensitive thin film transistor is an inverted coplanar
  • the inverted coplanar structure includes: the gate 1, the insulating layer 4, and the source 2 are longitudinally disposed from the bottom to the top, and the drain 3 and the source 2 are laterally coplanar; the insulating layer 4 wrapping the gate 1 so that the gate 1 and the source 2 are not in contact with each other between the gate 1 and the drain 3; the gap between the source 2 and the drain 3 is matched, and the source 2 and the drain 3 are A photosensitive leakage current path is formed between the lateral directions, and the light absorbing semiconductor layer 5 is disposed in the photosensitive leakage
  • the TFT when the TFT is operated in the off state by the gate voltage, no current flows between the source and the drain; however, when the TFT is irradiated by the light source, the electron-hole pair is excited by the energy of the light in the semiconductor, and the TFT The field effect of the structure separates the electron-hole pairs, which in turn causes the TFT to generate a photosensitive leakage current.
  • photosensitive leakage current characteristics allow the TFT array to be applied to the technology of light detection or light detection.
  • the present invention arranges a light absorbing semiconductor layer on an uppermost light absorbing layer in an inverted coplanar field effect transistor structure, which greatly increases photoelectron excitation and improves photoelectric conversion efficiency.
  • FIG. 7 is a flow chart showing a method of fabricating a photodetecting film according to an embodiment of the present invention. The method is used to prepare the photosensitive thin film transistor (ie, the photodetecting film) of the sixth embodiment, and specifically includes the following steps:
  • step S801 deposit a gate electrode by magnetron sputtering on the substrate of the pixel thin film transistor.
  • the substrate of the pixel thin film transistor may be a hard plate or a flexible material such as polyimide;
  • the insulating layer is coated by chemical vapor deposition or magnetron sputtering on the gate;
  • the n-type doped semiconductor layer of the source and the drain is deposited by chemical vapor deposition over the insulating layer, and the metal layer of the source and the drain is plated by magnetron sputtering, and the yellow light is passed through the yellow light.
  • the etching process defines a source and a drain of the predetermined structure, and the source and the drain are laterally coplanar, and the gap is matched, and a photosensitive leakage current path is formed between the source and the drain;
  • step S804 a light absorbing semiconductor layer is deposited by chemical vapor deposition in the photosensitive leakage current channel.
  • the TFT as the scan driving and data transfer switch does not need to be specially designed for the structure of collecting photocurrent between the source and the drain; however, the field effect transistor is applied to the detection of the photosensitive leakage current.
  • the drift path driven by the electric field is too long, and it is very likely that the photoelectrons will re-enter the holes before they reach the electrode smoothly. Recombination, or the Dangling Bond defect of the light absorbing semiconductor layer itself, cannot effectively contribute to the photocurrent output for photodetection.
  • the source and the drain of the fourth embodiment are used in this embodiment.
  • a new step was made to propose a new structure of source and drain.
  • the source and the drain are both in plurality, the source and the source are connected in parallel with each other, and the drain and the drain are connected in parallel; the gap between the source and the drain is Cooperating, forming a photosensitive leakage current channel between the source and the drain lateral direction includes: forming a first gap between adjacent sources, one drain being disposed in the first gap, and forming a first gap between adjacent drains Two gaps, one source is placed in the second gap, and the source and the drain are staggered and gap-fitted. The distance between each source and the adjacent drain is less than the electron drift distance, which is the distance that the electron can survive under field effect.
  • the plurality of sources belonging to the same pixel are connected in parallel, and the plurality of drains belonging to the same pixel are also connected in parallel, which can effectively reduce the probability of recombination of the photoexcited electrons and holes.
  • the successful probability of collecting photoelectrons by the electrodes under the effect of field effect is improved, and the photosensitivity of the TFT leakage current photosensitive thin film transistor is maximized.
  • the process for the stepwise preparation of the photosensitive thin film transistor (i.e., photodetecting film) of the seventh embodiment is similar to that of the photosensitive thin film transistor of the sixth embodiment.
  • the difference is that, in preparing the source and the drain, in step S803, “the source and the drain of the predetermined structure are defined by a yellow etching process, and the source and the drain are laterally coplanar, and the gap is matched, and the source is made.
  • Forming a photosensitive leakage current path between the pole and the drain lateral direction includes: defining a source electrode group and a drain electrode group by a yellow etching process, each of the source electrode groups including a plurality of sources, a source and a source Parallel to each other; each of the drain electrode groups includes a plurality of drains, and the drain and the drain are connected in parallel with each other; a first gap is formed between adjacent sources, and a drain is disposed in the first gap, A second gap is formed between adjacent drains, one source is disposed in the second gap, and the source and the drain are staggered and gap-fitted.
  • the photodetecting device is configured to receive a detection trigger signal, is in a light detecting state, and receives an optical signal reflected by a detecting portion (such as a fingerprint, an eyeball, an iris, etc.) to capture a user's detection. Measuring part information; and for receiving a light source trigger signal, in a state of emitting a light source (such as an infrared light source).
  • a detection trigger signal is in a light detecting state, and receives an optical signal reflected by a detecting portion (such as a fingerprint, an eyeball, an iris, etc.) to capture a user's detection.
  • a detecting portion such as a fingerprint, an eyeball, an iris, etc.
  • a light source trigger signal in a state of emitting a light source (such as an infrared light source).
  • the light source trigger signal and the detection trigger signal are alternately switched and conform to a preset frequency.
  • a bias voltage (including a forward bias, or a zero bias or a negative bias) can be applied by a TFT for scanning driving.
  • the TFT image sensing array film emits infrared light.
  • a forward bias or a zero bias or a negative bias, may be alternately applied between the p-type/i-type/n-type infrared photodiodes to trigger the first trigger signal or the second trigger signal.
  • a forward bias is applied to the p-type/i-type/n-type infrared photodiodes in the first period, so that the 10 columns of pixel lattices are all emitting infrared rays.
  • the light source trigger signal ie, the first trigger signal
  • the detection trigger signal ie, the second trigger signal
  • the time interval between adjacent periods may be set according to actual needs.
  • the time interval may be set to a time required for the TFT array to scan and scan each frame of the infrared photodiode array to receive at least one complete image signal. , that is, the preset frequency is switched once every time interval elapsed.
  • the identification area includes a plurality of identification sub-areas, and a photo detecting device is disposed below each of the identification sub-areas.
  • a photo detecting device is disposed below each of the identification sub-areas.
  • the two fingerprint recognition sub-regions may be evenly distributed on the screen one after another or one left and one right, or may be distributed in the screen in other arrangements.
  • the following describes the application process of the terminal with two fingerprint identification sub-areas: in the process of using, the user triggers the activation signal, and the photodetection device under the two fingerprint recognition sub-areas (ie, the photodetection device) ) are set to the on state.
  • the two fingerprint recognition sub-areas are covered by the entire display screen, so that the optical signals entering the display screen when the photodetecting devices under the two fingerprint recognition sub-areas are all set to the on state can be ensured.
  • the TFT image sensing array film ie, photodetection device
  • the user can also set the photodetection device under one of the fingerprint recognition sub-regions to be turned on according to his preference, and the photodetection device under the other fingerprint recognition sub-region is turned off.

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Abstract

本发明提供了一种电子设备，所述电子设备包括主电路板、处理器、传感器件和存储介质；所述主电路板上设置有通用集成电路卡卡槽，所述通用集成电路卡卡槽里设置有通用集成电路卡；所述传感器件与处理器连接。本发明通过将用户生理特征信息存储于UICC卡，在识别认证过程中无需通过云端服务器进行校验，而是通过处理器获取UICC卡中的预设身份识别信息，并将其与传感器件采集得到的待认证的身份信息进行比对，实现身份识别认证过程。由于身份信息是实时采集、实时认证的，可以保证设备的验证操作者即为合法注册用户本人，有效提高了认证过程的安全性。

Description

一种电子设备 技术领域
本发明涉及安全认证领域，特别涉及一种电子设备。
背景技术
通用集成电路卡(Universal Integrated Circuit Card，UICC)是具有物理特性的智能卡的总称。若应用在宽带移动网络的终端装置当中，UICC可作为终端中一个可移动的智能卡，用于存储用户信息、鉴权密钥(包括公钥与密钥)、付费方式等信息。ISO/IEC国际化标准组织制定了一系列的智能卡安全特性协议，以确保宽带移动网络用户的终端装置对UICC文件的安全访问。UICC引入了多应用平台的概念，实现了多个逻辑应用同时运行的多通道机制。在UICC中可以包括多种逻辑模块，如用户标识模块(Subscriber Identity Module，SIM)、通用用户标识模块(Universal Subscriber Identity Module，USIM)、IP多媒体业务标识模块(IP Multimedia Service Identity Module，ISIM)以及其他如电子签名认证、电子钱包等非电信应用模块。UICC中的逻辑模块可以单独存在，也可以多个同时存在。
尽管UICC已被应用在终端装置中有关电子签名认证、电子钱包等涉及用户隐私的应用模块，且ISO/IEC国际化标准组织的安全特性协议保障了终端装置对UICC文件的安全访问，但对于已越来越普及的移动终端身份识别并不适用。例如指纹识别、脸部识别等，目前的方法仍然是依靠终端所配置的传感器件及应用程序来实现，习知这类识别功能是以解锁终端装置为主要目的，或是在相对考虑信息安全的应用程序上实现解锁功能，具有识别功能的应用程序或识硬件处理器仅是将用户按压输入的身份识别图像(如指纹信息)，透过终端装置所配置的软件或硬件与原储存在终端的图像(预先设置好的指纹图像)作比对，并未与UICC的加密功能一起绑定。
然而，在对信息安全较高的金融支付、生理健康监控等应用上，越来越严谨的身份认证与信息加密已是大势所趋，特别是这类要求极端信息安全的应用通常都是以云服务器做为后端运算处理平台。云端运算的服务器为了保证发送生理特征信息的终端装置为注册的终端装置，一般会对终端装置的合法性进行安全验证。例如在进行金融交易的应用程序中，用户在发送认证要求给该金融交易云端平台后，云端平台通常会发送安全验证码到同一个终端装置或不同的终端装置，提示用户输入验证码以提高金融交易的安全性。即便如此，这种云端验证的平台仍无法提高操作该终端装置的用户正是合法注册该用户的本人，即尽管实现了对终端装置合法性的验证，但是无法鉴别使用该终端装置的是否为户主本人(即合法用户)，仍然存在着较大的安全隐患。
发明内容
为此，需要提供一种电子设备，解决目前云端服务器无法对操作终端装置的用户进行认证，导致信息验证过程中存在安全隐患等问题。
为实现上述目的，发明人提供了一种电子设备，所述电子设备包括主电路板、处理器、传感器件和存储介质；所述主电路板上设置有通用集成电路卡卡槽，所述通用集成电路卡卡槽里设置有通用集成电路卡；所述传感器件与处理器连接；所述存储介质中存储有可执行计算机程序，所述计算机程序被处理器执行时实现以下步骤：
接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡；
接收身份认证请求和传感器件采集的待认证的身份信息，从所述通用集成电路卡中获取预设身份识别信息，将待认证的身份信息与对应的预设身份识别信息进行比对，若匹配成功则身份认证成功，否则认证失败。
进一步地，所述计算机程序被处理器执行时实现步骤“接收预设身份识 别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收外部身份传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡，所述外部身份传感器件为独立于电子设备设置的传感器件。
进一步地，所述计算机程序被处理器执行时实现步骤“接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收电子设备的传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡。
进一步地，所述传感器件包括普通摄像头、红外摄像头、麦克风中的任意一种或多种，所述预设身份识别信息包括人脸信息、眼球信息、虹膜信息、语音信息中的任意一种或多种。
进一步地，所述计算机程序被处理器执行时还实现以下步骤：
采用加密散列函数将预设身份识别信息转换为预设身份识别信息摘要，所述预设身份识别信息述以预设身份识别信息摘要的形式存储于通用集成电路卡中。
进一步地，所述传感器件的数量为多个，分别用于采集不同的预设身份识别信息；所述计算机程序被处理器执行时实现以下步骤：
接收多种传感器件采集到的不同的预设身份识别信息，采用加密散列函数将采集到的多种预设身份识别信息转换为预设身份识别信息摘要。
进一步地，所述计算机程序被处理器执行时实现以下步骤：
接收同一种传感器件采集的多个的预设身份识别信息，采用加密散列函数将采集到的多种预设身份识别信息转换为预设身份识别信息摘要。
进一步地，所述计算机程序被处理器执行时还实现以下步骤：
将鉴权密钥存储于集成电路卡中，所述鉴权密钥包括公钥和私钥；
获取通用集成电路卡中的公钥，采用RSA加密算法应用公钥对预设身份识别信息摘要进行加密，得到预设加密信息，所述预设加密信息包括加密后的预设身份识别信息摘要；
接收待认证的身份信息后，采用加密散列函数将待认证的身份信息转换为待认证身份信息摘要；以及采用RSA加密算法公钥应用对待认证身份信息摘要进行加密，得到待认证加密信息，所述待认证加密信息包括加密后的待认证身份信息摘要；
获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得预设身份识别信息摘要，将预设身份识别信息摘要与待认证身份信息摘要进行比较，若匹配成功则身份认证成功，否则认证失败。
进一步地，所述计算机程序被处理器执行时还实现以下步骤：
接收预设身份识别信息后，随机生成第一随机数字字串与第一随机填充空白，所述第一随机填充空白为随机生成、填充于预设身份识别信息摘要的字符；所述预设加密信息还包括加密后的第一随机数字字串与第一随机填充空白；
接收待认证的身份信息后，随机生成第二随机数字字串与第二随机填充空白，所述第二随机填充空白为随机生成、填充于待认证身份信息摘要的字符；
获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得第一随机数字字串与第一随机填充空白；
比较第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白是否匹配成功，若是则身份认证成功，否则认证失败。
进一步地，所述计算机程序被处理器执行时还实现以下步骤：
接收加密等级设置指令，设置电子设备的加密等级，所述加密等级包括第一加密等级、第二加密等级和第三加密等级；
当电子设备处于第一加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要、第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白之间三者均匹配成功；
当电子设备处于第二加密等级时，判断身份认证成功的条件为预设身份 识别信息摘要与待认证身份信息摘要匹配成功、以及第一随机数字字串与第二随机数字字、第一随机填充空白与第二随机填充空白两者中的任一项匹配成功；
当电子设备处于第三加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要匹配成功。
本发明通过将用户生理特征信息存储于UICC卡，在识别认证过程中无需通过云端服务器进行校验，而是通过处理器获取UICC卡中的预设身份识别信息，并将其与传感器件采集到的待认证的身份信息进行比对，实现身份识别认证过程。由于身份信息是实时采集、实时认证的，可以保证设备的验证操作者即为合法注册用户本人，有效提高了认证过程的安全性。
附图说明
图1为本发明一实施方式涉及的电子设备的示意图；
图2为本发明一实施方式涉及的像素侦测区的电路示意图；
图3为本发明一实施方式涉及的光侦测薄膜的结构示意图；
图4为本发明另一实施方式涉及的光侦测薄膜的结构示意图；
图5为本发明一实施方式涉及的源极和漏极结构配合的示意图；
图6为本发明一实施方式涉及的光学器件的分布方式的示意图；
图7为本发明一实施方式涉及的光侦测薄膜的制备方法的流程图；
图8为本发明一实施方式所述的光侦测薄膜制备过程中的示意图；
图9为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图；
图10为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图；
图11为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图；
图12为本发明一实施方式所述的计算机程序被处理器执行时的步骤流程图；
图13为本发明另一实施方式所述的计算机程序被处理器执行时的步骤流 程图；
附图标记说明：
1、栅极；2、源极；3、漏极；4、绝缘层；5、光吸收半导体层；
101、触摸屏或盖板玻璃；102、显示单元；103、低折射率胶；105、软性电路板；106、主电路板；107、通用集成电路卡卡槽；108、通用集成电路卡。
具体实施方式
为详细说明技术方案的技术内容、构造特征、所实现目的及效果，以下结合具体实施例并配合附图详予说明。
请参阅图1，为本发明一实施方式涉及的电子设备的示意图；所述电子设备为具有触摸显示屏的设备，如手机、平板电脑、个人数字助理等智能移动设备，还可以是个人计算机、工业装备用计算机等电子设备。所述电子设备包括主电路板106、处理器、传感器件和存储介质；所述主电路板106上设置有通用集成电路卡卡槽107，所述通用集成电路卡卡槽107里设置有通用集成电路卡108。所述处理器为具有数据处理功能的电子元件，如中央处理器(Central Processing Unit，简称CPU)、数字信号处理器(Digital Signal Processor，简称DSP)或者系统芯片(System on Chip,简称SoC)。所述存储介质为具有数据存储功能的电子元件，包括但不限于：RAM、ROM、磁碟、磁带、光盘、闪存、U盘、移动硬盘、存储卡、记忆棒等。
所述存储介质中存储有可执行计算机程序，所述计算机程序被处理器执行时实现以下步骤：接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡；接收身份认证请求和传感器件采集的待认证的身份信息，从所述通用集成电路卡中获取预设身份识别信息，将待认证的身份信息与对应的预设身份识别信息进行比对，若匹配成功则身份认证成功，否则认证失 败。
由于预设身份识别信息被预先存储于通用集成电路卡(以下简称UICC卡)中，处理器可以获取UICC卡中的预设身份识别信息，并将其与待认证的身份信息进行比对，实现身份识别认证过程。由于身份信息是实时采集、实时认证的，可以保证设备的验证操作者即为合法注册用户本人，相较于在云端服务器进行认证的方式，有效提高了认证过程的安全性。
在本实施方式中，所述传感器件包括普通摄像头、红外摄像头、麦克风中的任意一种或多种，所述预设身份识别信息包括人脸信息、眼球信息、虹膜信息、语音信息中的任意一种或多种。具体地，普通摄像头可以用于采集人脸信息和眼球信息，红外摄像头可以用于采集虹膜信息，麦克风可以用于采集语音信息。用户可以根据实际需要，开启电子设备上不同的传感器件，进行身份信息的采集。多种传感器件的设置给用户提供了更多的选择，有效提高了用户的感官体验。
在某些实施例中，所述计算机程序被处理器执行时实现步骤“接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收外部身份传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡，所述外部身份传感器件为独立于电子设备设置的传感器件。在另一些实施例中，所述计算机程序被处理器执行时实现步骤“接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收电子设备的传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡。简言之，对于预设身份识别信息的录入，既可以通过电子设备上的传感器件(如集成于电子设备上的摄像头、麦克风等)来采集完成，也可以依赖于外部身份传感器件(如外接的摄像头、外接麦克风等)来完成，从而适用更多的应用场景。
在某些实施例中，所述电子设备还包括显示单元102，所述显示单元102设置于主电路板106的上方，显示单元102为以有源阵列薄膜晶体管作为扫 描驱动与传输数据的显示屏。所述显示屏包括AMOLED显示屏或微发光二极管显示屏。显示屏的透光率大于3％，从而在实现光侦测功能过程中，透过显示屏的光线的光通量足够大，进而被设置于显示屏下方的光侦测器件接收，从而实现光侦测功能。在另一些实施例中，所述显示单元102的上方还设置有触摸屏或盖板玻璃101，从而满足不同终端产品的需求。
在某些实施例中，所述显示单元102与主电路板106通过软性电路板105进行连接，所述软性电路板105包括具有影像信号读取识别功能的芯片。所述识别功能的芯片包括指纹影像读取芯片、指纹识别算法芯片等，芯片型号如Analog Devices公司的ADAS1256芯片。软性电路板又称柔性线路板、挠性线路板。简称软板或FPC，是相对于普通硬树脂线路板而言，软性电路板具有配线密度高、重量轻、厚度薄、配线空间限制较少、灵活度高等优点。软性电路板的设置可以使得光侦测装置整体更加轻薄化，满足市场需求。
为了加强UICC卡中预设身份识别信息的安全性，以及节省预设身份识别信息在UICC卡中的存储空间，在某些实施例中，所述计算机程序被处理器执行时还实现以下步骤：采用加密散列函数将预设身份识别信息转换为预设身份识别信息摘要，所述预设身份识别信息述以预设身份识别信息摘要的形式存储于通用集成电路卡中。加密散列函数即Hash Function(也有直接音译为“哈希”)的，就是把任意长度的输入(又叫做预映射，pre-image)，通过散列算法，变换成固定长度的输出，该输出就是散列值。这种转换是一种压缩映射，也就是，散列值的空间通常远小于输入的空间，不同的输入可能会散列成相同的输出。简言之，加密散列函数就是一种将任意长度的消息压缩到某一固定长度的消息摘要(Digest)的函数，通过转换可以压缩预设身份识别信息的存储空间，以便预设身份识别信息更好地存储。
在某些实施例中，所述传感器件的数量为多个，分别用于采集不同的预设身份识别信息；所述计算机程序被处理器执行时实现以下步骤：接收多种传感器件采集到的不同的预设身份识别信息，采用加密散列函数将采集到的 多种预设身份识别信息转换为预设身份识别信息摘要。在另一些实施例中，所述计算机程序被处理器执行时实现以下步骤：接收同一种传感器件采集的多个的预设身份识别信息，采用加密散列函数将采集到的多种预设身份识别信息转换为预设身份识别信息摘要。
例如预设身份识别信息可以为多段语音信息，用户可以通过电子设备的麦克风依次输入多段不同的语音信息，处理器接收到多段语音信息后(即同一传感器件采集的多个预设身份识别信息)，采用加密散列函数将采集的多段语音信息转换为语音摘要。再比如多个预设身份识别信息包括某一段语音信息以及人脸信息，将采用加密散列函数将人脸信息和该语音信息转换为相应的身份识别摘要。预设身份识别信息为多个，一方面给用户提供了更多的选择，另一方面也有效提高了身份信息认证的安全性和准确性。
如图12所示，为本发明一实施方式所述的计算机程序被处理器执行时的步骤流程图。所述计算机程序被处理器执行时还实现以下步骤：
首先进入步骤S1201将鉴权密钥存储于集成电路卡中，所述鉴权密钥包括公钥和私钥；
而后进入步骤S1202获取通用集成电路卡中的公钥，采用RSA加密算法应用公钥对预设身份识别信息摘要进行加密，得到预设加密信息，所述预设加密信息包括加密后的预设身份识别信息摘要；
而后进入步骤S1203接收待认证的身份信息后，采用加密散列函数将待认证的身份信息转换为待认证身份信息摘要；以及采用RSA加密算法公钥应用对待认证身份信息摘要进行加密，得到待认证加密信息，所述待认证加密信息包括加密后的待认证身份信息摘要；
而后进入步骤S1204获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得预设身份识别信息摘要；
而后进入步骤S1205将预设身份识别信息摘要与待认证身份信息摘要进行比较，若匹配成功则进入步骤S1207身份认证成功，否则进入步骤S1206 认证失败。通过上述方法，采用公钥加密、私钥解密的方式，由于公钥和私钥存储于UICC卡中，使得提取UICC卡中预设身份识别信息摘要的提取安全性大大更加。在另一些实施例中，对摘要进行加密或解密的算法并不局限于RSA算法，也可以是现有的其他加密解密算法。
如图13所示，为了进一步提高信息认证的安全性，在某些实施例中，所述计算机程序被处理器执行时还实现以下步骤：
首先进入步骤S1301接收预设身份识别信息后，随机生成第一随机数字字串与第一随机填充空白。所述第一随机填充空白为随机生成、填充于预设身份识别信息摘要的字符；所述预设加密信息还包括加密后的第一随机数字字串与第一随机填充空白；而后进入步骤S1302接收待认证的身份信息后，随机生成第二随机数字字串与第二随机填充空白，所述第二随机填充空白为随机生成、填充于待认证身份信息摘要的字符；而后进入步骤S1303获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得第一随机数字字串与第一随机填充空白；而后进入步骤S1304比较第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白是否匹配成功，若是则进入步骤S1306身份认证成功，否则进入步骤S1305认证失败。简言之，待认证的身份信息要想通过认证，除了其生成的摘要与UICC卡中的预设身份识别信息摘要相匹配之外，还要求第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白中的一种或多种相匹配，从而有效提高了身份信息认证的安全性。
为了让用户可以根据实际需要设置不同的应用软件或者电子设备开机的加密等级，在某些实施例中，所述计算机程序被处理器执行时还实现以下步骤：
接收加密等级设置指令，设置电子设备的加密等级，所述加密等级包括第一加密等级、第二加密等级和第三加密等级；
当电子设备处于第一加密等级时，判断身份认证成功的条件为预设身份 识别信息摘要与待认证身份信息摘要、第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白之间三者均匹配成功；
当电子设备处于第二加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要匹配成功、以及第一随机数字字串与第二随机数字字、第一随机填充空白与第二随机填充空白两者中的任一项匹配成功；
当电子设备处于第三加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要匹配成功。
简言之，加密程度从高到低为第一加密等级、第二加密等级、第三加密等级。对于一些需要强加密的应用，例如涉及到金融交易、商业秘密数据、在线支付密码的软件，用户可以将这些应用程序的加密等级设置为第一加密等级，以便在身份信息认证过程中，只有当预设身份识别信息摘要与待认证身份信息摘要、第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白之间三者均匹配成功时，才可以完成相应的解锁操作或支付操作，从而提高信息数据的安全性。而对于不需要强加密的应用，例如相册图片的浏览，用户可以根据自身需要将应用程序的加密程度设置为第二加密等级或第三加密等级。
在某些实施例中，所述电子设备还包括光侦测器件，所述显示单元上设置有身份识别区，所述光侦测器件设置于身份识别区的下方，所述显示单元102的下端面与光侦测器件的上端面可以通过低折射率胶粘合，所述低折射率胶的折射率小于1.4。低折射率胶一方面可以起到粘合作用，使得光侦测薄膜紧固于显示单元的底面，不易发送脱落；另一方面采用低折射率的胶，当光线透过显示单元照射入光侦测薄膜时，由于低折射率胶的折射作用(胶的折射率低于光侦测薄膜上与之接触的部位的折射率，通常情况下光侦测薄膜上与低折射率胶接触的部位的折射率在1.4以上)，使得光线在低折射率胶位置发生折射后，可以尽可能以垂直方向入射至光侦测薄膜，可以有效提高光电 转换率。在本实施方式中，所述低折射率胶为具有碳-氟键的有机化合胶材。
当电子设备还包括光侦测器件时，预设身份识别信息还可以为血量信息、指纹信息等。以预设身份识别信息为血量信息为例，当光线穿过人体皮肤进入到体表以下人体其他组织时，有些光线将被吸收，有些光线会发生反射、散射等情况，光路的变化取决于皮肤以下组织的构造。一般情况下，人体血液可以吸收比周围组织更多的光，因而当光信号遇到更多的血液时，反射回的光信号就越少。因此可以通过检测身体部分反射回的光信号信息，得到用户对应的血量信息，而根据用户对应的血量信息又可以通过换算得到用户的其他预设身份识别信息(如血压指数、体脂含量、血氧饱和度、心肺指数、心电图等)。
进一步地，电子设备对待认证的身份信息进行采集时，乃是以显示单元上的预设阵列像素组合，照射预备采集之身份识别信息所在身体部位，并由光侦测器件接受反射光信号以获取身份识别信息。在所述对预设身份识别信息采集时，计算机程序可对显示单元上的阵列像素组合作编码，以加密过的组合光源照射身体部位，并接收身体部位反馈回的光信息。预设阵列像素组合可以是显示单元上某一部分排列成预设图案的像素阵列，预设图案可以根据实际需要进行设置。相较于显示单元上全部阵列像素发出光源的方式，上述方法可以进一步提高信息采集的安全性。
在某些实施例中，所述光侦测器件为TFT影像感测阵列薄膜，包括MxN个像素侦测区，每一像素侦测区对应设置一个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜；所述光侦测薄膜包括光敏二极管或光敏电晶管。以光侦测薄膜包括光敏二极管为例，每一个像素侦测区的基本电路组成如图2所示。光敏二极管为形成光侦测薄膜之主要传感器件，栅极扫描线以固定之帧速率(Frame Rate)将薄膜晶体管(TFT)操作在打开模式，当所述光侦测器件侦测到光信号，打开之薄膜晶体管即可将电容电压数据传输到读取芯片。具体可以参考以下两篇文献：【1】“M.J. Powell,I.D.French,J.R.Hughes,N.C.Bird,O.S.Davies,C.Glasse,and J.E.Curran,【2】“Amorphous silicon image sensor arrays,”in Mater.Res.Soc.Symp.Proc.,1992,vol.258,pp.1127–1137”、“B.Razavi,“Design of Analog CMOS Integrated Circuits,”McGraw-Hill,2000”。
所述光侦测器件为TFT影像感测阵列薄膜，其光侦测波长范围包含可见光波段或是红外光波段。所述TFT影像感测阵列薄膜由MXN个光侦测薄膜组成，每一光侦测薄膜对应侦测一个像素，因而TFT影像感测阵列薄膜可以用于侦测MXN个像素，以形成相应影像。对于每一个光侦测薄膜而言，有以下几种实现方式：
实施例一：
所述TFT影像感测阵列薄膜(即光侦测器件)为光敏二极管所形成的阵列，所述光敏二极管所形成的阵列包括光敏二极管感应区。现有的液晶显示(LCD)面板或有机发光二极管(OLED)显示面板，皆是以TFT结构驱动扫描单一像素，以实现面板上像素阵列的显示功能。形成TFT开关功能的主要结构为半导体场效晶体管(FET)，其中熟知的半导体层材料主要有非晶硅、多晶硅、氧化铟镓锌(IGZO)、或是混有碳纳米材料之有机化合物等等。由于光感测二极管的结构亦可采用此类半导体材料制备，且生产设备也兼容于TFT阵列的生产设备，因此近年来TFT光侦测二极管(即光敏二极管)开始以TFT阵列制备方式进行生产。现有的光敏二极管的具体结构可以参考美国专利US6943070B2、中华人民共和国专利CN204808361U中对光侦测器件结构的描述。TFT影像感测阵列薄膜的生产工艺与显示面板TFT结构不同的是：原本在显示面板的像素开口区域，在生产工艺上改为光感测区域。其TFT制备方式可以采用薄型玻璃为基材，亦可采用耐高温塑性材料为基材，如美国专利US6943070B2所述。
现有的TFT影像感测阵列薄膜易受周围环境光或者显示屏像素所发出的 可见光的反射、折射等因素影响，造成光学干扰，严重影响内嵌于显示面板下方的TFT影像感测阵列薄膜的信号噪声比(SNR)，为了提高信号噪声比，如图3所示，本发明的光侦测薄膜做了进一步改进，使得改进后的TFT影像感测阵列薄膜可以侦测识别用户身体部分反射回的红外信号。具体结构如下：
所述光敏二极管层包括p型半导体层、i型半导体层、n型半导体层，p型半导体层、i型半导体层、n型半导体层自上而下堆叠设置，所述i型半导体层为微晶硅结构或非结晶硅化锗结构。所述微晶硅结构为硅烷与氢气通过化学气相沉积成膜的半导体层，微晶硅的结构的结晶度大于40％，且其禁带宽度小于1.7eV。所述非结晶硅化锗结构为硅烷、氢气与锗烷通过化学气相沉积成膜的非结晶半导体层，且其禁带宽度小于1.7eV。
禁带宽度(Band gap)是指一个带隙宽度(单位是电子伏特(eV))，固体中电子的能量是不可以连续取值的，而是一些不连续的能带，要导电就要有自由电子存在，自由电子存在的能带称为导带(能导电)，被束缚的电子要成为自由电子，就必须获得足够能量从价带跃迁到导带，这个能量的最小值就是禁带宽度。禁带宽度是半导体的一个重要特征参量，其大小主要决定于半导体的能带结构，即与晶体结构和原子的结合性质等有关。
在室温下(300K)，锗的禁带宽度约为0.66ev，硅烷中含有锗元素，当掺入锗元素后，会使得i型半导体层的禁带宽度下降，当满足小于1.7eV时，说明i型半导体层可以接收可见光至红外光(或近红外光)波长范围内的光信号。通过调整化学气象沉积的GeH4浓度，可以将含有非晶或微晶硅化锗结构的光敏二极管的操作波长范围扩展到光波长600nm到2000nm的范围。
实施例二：
在采用实施例一的基础上，为了提高光电转换之量子效率，非晶硅光电二极管也可采用双结以上p型/i型/n型结构堆叠形成。该光电二极管第一结层p型/i型/n型材料仍然为非晶硅结构，第二结层以上p型/i型/n型材料可以为微晶结构、多晶结构或是掺有可扩展光敏波长范围之化合物材料。简 言之，可以采用多组p型/i型/n型结构上下堆叠来实现组成光敏二极管结构，对于每一个p型/i型/n型结构，则采用实施例一所描述的光敏二极管结构。
实施例三：
在采用实施例一或实施例二的基础上，对于每一个p型/i型/n型结构而言，其所包含的p型半导体层可以为大于两层的多层结构。例如p型半导体层为三层结构，自上而下包括第一p型半导体层(p1层)、第二p型半导体层(p2层)、第三p型半导体层(p3层)。其中，p1层可以采用非结晶结构且重掺杂硼(含硼浓度为标准工艺的两倍以上)；p2和p3采用微晶结构，且正常掺杂硼(按照标准工艺浓度掺杂)，依靠厚度减薄的p2层和p3层减少对光线的吸收，使得光线尽可能多地进入i层并被i层所吸收，提高光电转换率；另一方面p2层和p3层采用正常的硼掺杂可以有效避免由于p1层的重掺杂导致劣化内建电位。当p型半导体层包括为其他层数的多层结构与此类似，此处不再赘述。
同样的，n型半导体层也可以为大于两层的多层结构。例如n型半导体层为三层结构，自上而下包括第一n型半导体层(n1层)、第二n型半导体层(n2层)、第三n型半导体层(n3层)。其中，n3层可以采用非结晶结构且重掺杂磷(含磷量为标准工艺两倍以上)；n1和n2采用微晶结构，且正常掺杂磷(按照标准生产工艺)，依靠厚度减薄的n1层和n2层减少对光线的吸收，使得光线尽可能多地进入i层并被i层所吸收，提高光电转换率；另一方面n1层和n2层采用正常的磷掺杂可以有效避免由于n3层的重掺杂导致劣化内建电位。当n型半导体层包括为其他层数的多层结构与此类似，此处不再赘述。
实施例四：
本实施例是针对实施例一或二或三的进一步改进，如图6中的(a)所示，具体包括：在所述p型半导体层的上端面设置有第一光学器件，所述第一光学器件用于降低光线在p型半导体层的上端面的反射率、或是减小光线在p型半导体层的折射角度以增加光入射量。减小光线在p型半导体层的折射角 度，可以让光线尽可能地以接近于垂直方向射入p型半导体层，使得光线尽可能地被p型半导体层下方的i型半导体层所吸收，从而进一步提高光敏二极管的光电转换率。当p型半导体层为多层结构时，第一光学器件设置于最上方的一层p型半导体层的上端面。
所述第一光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构。所述第一光学器件的折射率小于p型半导体层的折射率，可以使得光线在第一光学器件发生折射后，入射角小于折射角，即光线尽可能地以接近于垂直方向射入p型半导体层。
实施例五：
本实施例是针对实施例一或二或三或四的进一步改进，如图6中的(b)(c)所示，所述n型半导体层的下端面还设置有第二光学器件，所述第二光学器件用于提高光线在n型半导体层的下端面的多重反射率。所述多重反射率是指光线在经过第二光学器件反射后进入i型半导体层，再次被i型半导体层所吸收，吸收后的光线又再次经过第二光学器件反射后进入i型半导体层，如此反复多次，提高i型半导体层的光电转换率。当n型半导体层为多层结构时，第二光学器件设置于最下方的一层n型半导体层的下端面。
所述第二光学器件包括折射率呈周期性变化的光子晶体结构、或是折射率呈非周期性变化的漫散射结构，且所述第二光学器件的折射率小于n型半导体层的折射率。这样，可以使得光线在n型半导体层的下端面尽可能发生反射，以便反射后的光线再次被i型半导体层所吸收，进而适量放大属于i型半导体层可吸收的光波长范围内的信号，提高该波长范围内的光电流量。
实施例六：
如图4所示，所述TFT影像感测阵列薄膜(即光侦测器件)为光敏电晶管所形成的阵列，所述光敏电晶管所形成的阵列包括光敏电晶管感应区，所述光敏电晶管感应区设置有光敏薄膜晶体管，所述光敏薄膜晶体管包括栅极1、源极2、漏极3、绝缘层4、光吸收半导体层5；所述光敏薄膜晶体管为倒 立共平面式结构，所述倒立共平面式结构包括：所述栅极1、绝缘层4、源极2纵向自下而上设置，所述漏极3与所述源极2横向共面设置；绝缘层4包裹所述栅极1，以使得栅极1与源极2、栅极1与漏极3之间均不接触；源极2和漏极3之间间隙配合，源极2和漏极3横向之间形成光敏漏电流通道，所述光吸收半导体层5设置于光敏漏电流通道内。
一般藉由栅极电压控制TFT操作在关闭状态时，源极到漏极之间不会有电流通过；然而当TFT受光源照射时，由于光的能量在半导体激发出电子-空穴对，TFT结构的场效应作用会使电子-空穴对分离，进而使TFT产生光敏漏电流。这样的光敏漏电流特性让TFT阵列可应用在光侦测或光侦测之技术上。相较于一般采用TFT漏电流作光敏薄膜晶体管之器件，本发明以倒立共平面型场效晶体管结构将光吸收半导体层配置于最上方吸光层，大幅增加了光电子的激发，提高了光电转换效率。
如图7所示，为本发明一实施方式涉及的光侦测薄膜的制备方法的流程图。所述方法用于制备实施例六的光敏薄膜晶体管(即光侦测薄膜)，具体包括以下步骤：
首先进入步骤S801在像素薄膜晶体管的基材上通过化磁控溅射镀膜出栅极。像素薄膜晶体管的基材可以采用硬板，也可以采用柔性材料(如聚酰亚胺)；
而后进入步骤S802在所述栅极的上方通过化学气相沉积或是磁控溅射镀膜出绝缘层；
而后进入步骤S803在所述绝缘层的上方通过化学气相沉积镀膜出源极和漏极的n型掺杂半导体层，并通过磁控溅射镀膜出源极和漏极的金属层，通过黄光蚀刻工艺定义出预设结构的源极和漏极，得到源极和漏极横向共面，且间隙配合，并使得源极和漏极横向之间形成光敏漏电流通道；
而后进入步骤S804在所述光敏漏电流通道内化学气相沉积镀膜出光吸收半导体层。
实施例七：
以熟知的场效晶体管结构而言，作为扫描驱动与数据传输开关的TFT不需特别针对源极和漏极之间收集光电流的结构作设计；然而对场效晶体管应用在光敏漏电流的侦测上，如果被光线激发的电子-空穴对被场效分离后，受电场驱动的飘移(Drift)路径太长，极有可能在光电子未能顺利抵达电极之前，就已经与空穴作再结合(Recombination)，或是被光吸收半导体层本身的悬空键结(Dangling Bond)缺陷给捕获，无法有效地贡献作光侦测的光电流输出。
为了改善光敏漏电流受源极与漏极之间通道长度的影响，以达到可增加吸收光半导体面积却不致于劣化光电转换效率的目的，本实施例中对实施例四的源极和漏极进行一步改进，提出了一源极与漏极的新型结构。
如图5所示，所述源极和漏极的数量均为多个，源极和源极之间相互并联，漏极和漏极之间相互并联；所述源极和漏极之间间隙配合，源极和漏极横向之间形成光敏漏电流通道包括：相邻的源极之间形成第一间隙，一个漏极置于所述第一间隙内，相邻的漏极之间形成第二间隙，一个源极置于所述第二间隙内，源极和漏极之间交错设置且间隙配合。每一源极与相邻的漏极之间的距离小于电子飘移距离，所述电子飘移距离为电子在场效作用下能够生存的距离。这样，在每一个侦测像素里，所属同一像素的多个源极都相互并联，且所属同一像素的多个漏极也都相互并联，可以有效降低光激发电子与空穴再复合的机率，提高了场效应作用下电极收集光电子的成功机率，最大化地改善了TFT漏电流光敏薄膜晶体管的光敏度。
如图8至11所示，为逐步制备实施例七的光敏薄膜晶体管(即光侦测薄膜)的过程，其大体步骤与制备实施例六的光敏薄膜晶体管类似。区别在于，在制备源极和漏极时，步骤S803中“通过黄光蚀刻工艺定义出预设结构的源极和漏极，得到源极和漏极横向共面，且间隙配合，并使得源极和漏极横向之间形成光敏漏电流通道”包括：通过黄光蚀刻工艺定义出源极电极组和漏 极电极组，每一个源极电极组包括多个源极，源极和源极之间相互并联；每一个漏极电极组包括多个漏极，漏极和漏极之间相互并联；相邻的源极之间形成第一间隙，一个漏极置于所述第一间隙内，相邻的漏极之间形成第二间隙，一个源极置于所述第二间隙内，源极和漏极之间交错设置且间隙配合。
在某些实施例中，所述光侦测器件用于接收侦测触发信号，处于光侦测状态，并接收侦测部位(如指纹、眼球、虹膜等)反射的光信号以捕捉用户的侦测部位信息；以及用于接收光源触发信号，处于发出光源(如红外光源)状态。优选的，光源触发信号与侦测触发信号交替切换，并符合一预设频率。以光侦测器件为光敏二极管所形成的阵列为例，在实际应用过程中，可借由TFT作扫描驱动外加一偏压(包括正向偏压，或零偏压或负偏压)在p型/i型/n型光电二极管之间，实现TFT影像感测阵列薄膜发出红外光功能。
具体地，可交替在p型/i型/n型红外光敏二极管之间施加正向偏压，或零偏压或负偏压，以触发所述第一触发信号或第二触发信号。以红外光敏二极管所形成的阵列有10列像素点阵为例，在第一周期内对p型/i型/n型红外光敏二极管施加正向偏压，使得10列像素点阵均处于发出红外光状态；在第二周期内对p型/i型/n型红外光敏二极管施加零偏压或负偏压，使得10列像素点阵均处于红外光侦测状态，用于捕捉用户眼球反射回的红外光信息，并生成相应的红外图像输出；在第三周期内又对p型/i型/n型红外光敏二极管施加正向偏压，使得10列像素点阵均处于发出红外光状态，反复交替，以此类推。进一步地，光源触发信号(即第一触发信号)与侦测触发信号(即第二触发信号)交替切换，切换的频率符合一预设频率。相邻的周期之间的时间间隔可以根据实际需要而设置，优选时间间隔可以设置为TFT阵列驱动扫描每一帧(Frame)红外光敏二极管阵列至少能接收到一帧完整的影像信号所需的时间，即预设频率为每经过上述时间间隔进行一次切换。
在某些实施例中，所述身份识别区域包括多个身份识别子区域，每一身份识别子区域的下方对应设置一个光侦测器件。以指纹识别为例，所述计算 机程序被处理器执行时实现以下步骤：接收到对指纹识别子区域(即身份识别子区域)的启动指令，侦测控制电路开启所述指纹识别子区域(即身份识别子区域)的下方的光侦测器件；或者，接收到对指纹识别子区域的关闭指令，侦测控制电路开启所述指纹识别子区域的下方的光侦测器件。
以指纹识别子区域的数量为两个为例，两个指纹识别子区域可以一上一下或一左一右均匀分布于屏幕中，也可以以其他排列方式分布于屏幕中。下面对具有两个指纹识别子区域的终端的应用过程做具体说明：在使用过程中，接收用户触发的启动信号，将两个指纹识别子区域下方的光侦测器件(即光侦测器件)都设置成开启状态。优选的实施例中，两个指纹识别子区域构成的范围覆盖了整个显示屏，这样可以保证当两个指纹识别子区域下方的光侦测器件都设置成开启状态时，进入显示屏的光信号可以被下方的TFT影像感测阵列薄膜(即光侦测器件)所吸收，从而及时捕捉到用户的指纹信息或身体部分信息。当然，用户也可以根据自身喜好，设置某一个指纹识别子区域下方的光侦测器件开启，另一个指纹识别子区域下方的光侦测器件关闭。
需要说明的是，尽管在本文中已经对上述各实施例进行了描述，但并非因此限制本发明的专利保护范围。因此，基于本发明的创新理念，对本文所述实施例进行的变更和修改，或利用本发明说明书及附图内容所作的等效结构或等效流程变换，直接或间接地将以上技术方案运用在其他相关的技术领域，均包括在本发明的专利保护范围之内。

Claims (10)

  1. 一种电子设备，其特征在于，所述电子设备包括主电路板、处理器、传感器件和存储介质；所述主电路板上设置有通用集成电路卡卡槽，所述通用集成电路卡卡槽里设置有通用集成电路卡；所述传感器件与处理器连接；所述存储介质中存储有可执行计算机程序，所述计算机程序被处理器执行时实现以下步骤：
    接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡；
    接收身份认证请求和传感器件采集的待认证的身份信息，从所述通用集成电路卡中获取预设身份识别信息，将待认证的身份信息与对应的预设身份识别信息进行比对，若匹配成功则身份认证成功，否则认证失败。
  2. 如权利要求1所述的电子设备，其特征在于，所述计算机程序被处理器执行时实现步骤“接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收外部身份传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡，所述外部身份传感器件为独立于电子设备设置的传感器件。
  3. 如权利要求1所述的电子设备，其特征在于，所述计算机程序被处理器执行时实现步骤“接收预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡”包括：接收电子设备的传感器件采集的预设身份识别信息，并将所述预设身份识别信息写入通用集成电路卡。
  4. 如权利要求3所述的电子设备，其特征在于，所述传感器件包括普通摄像头、红外摄像头、麦克风中的任意一种或多种，所述预设身份识别信息包括人脸信息、眼球信息、虹膜信息、语音信息中的任意一种或多种。
  5. 如权利要求1至4任一项所述的电子设备，其特征在于，所述计算机程序被处理器执行时还实现以下步骤：
    采用加密散列函数将预设身份识别信息转换为预设身份识别信息摘要，所述预设身份识别信息述以预设身份识别信息摘要的形式存储于通用集成电 路卡中。
  6. 如权利要求1或3或4所述的电子设备，其特征在于，所述传感器件的数量为多个，分别用于采集不同的预设身份识别信息；所述计算机程序被处理器执行时实现以下步骤：
    接收多种传感器件采集到的不同的预设身份识别信息，采用加密散列函数将采集到的多种预设身份识别信息转换为预设身份识别信息摘要。
  7. 如权利要求1或3或4所述的电子设备，其特征在于，所述计算机程序被处理器执行时实现以下步骤：
    接收同一种传感器件采集的多个的预设身份识别信息，采用加密散列函数将采集到的多种预设身份识别信息转换为预设身份识别信息摘要。
  8. 如权利要求5所述的电子设备，其特征在于，所述计算机程序被处理器执行时还实现以下步骤：
    将鉴权密钥存储于集成电路卡中，所述鉴权密钥包括公钥和私钥；
    获取通用集成电路卡中的公钥，采用RSA加密算法应用公钥对预设身份识别信息摘要进行加密，得到预设加密信息，所述预设加密信息包括加密后的预设身份识别信息摘要；
    接收待认证的身份信息后，采用加密散列函数将待认证的身份信息转换为待认证身份信息摘要；以及采用RSA加密算法公钥应用对待认证身份信息摘要进行加密，得到待认证加密信息，所述待认证加密信息包括加密后的待认证身份信息摘要；
    获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得预设身份识别信息摘要，将预设身份识别信息摘要与待认证身份信息摘要进行比较，若匹配成功则身份认证成功，否则认证失败。
  9. 如权利要求8所述的电子设备，其特征在于，所述计算机程序被处理器执行时还实现以下步骤：
    接收预设身份识别信息后，随机生成第一随机数字字串与第一随机填充 空白，所述第一随机填充空白为随机生成、填充于预设身份识别信息摘要的字符；所述预设加密信息还包括加密后的第一随机数字字串与第一随机填充空白；
    接收待认证的身份信息后，随机生成第二随机数字字串与第二随机填充空白，所述第二随机填充空白为随机生成、填充于待认证身份信息摘要的字符；
    获取通用集成电路卡中的私钥，采用RSA加密算法应用私钥对预设加密信息进行解密，获得第一随机数字字串与第一随机填充空白；
    比较第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白是否匹配成功，若是则身份认证成功，否则认证失败。
  10. 如权利要求9所述的电子设备，其特征在于，所述计算机程序被处理器执行时还实现以下步骤：
    接收加密等级设置指令，设置电子设备的加密等级，所述加密等级包括第一加密等级、第二加密等级和第三加密等级；
    当电子设备处于第一加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要、第一随机数字字串与第二随机数字字串、第一随机填充空白与第二随机填充空白之间三者均匹配成功；
    当电子设备处于第二加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要匹配成功、以及第一随机数字字串与第二随机数字字、第一随机填充空白与第二随机填充空白两者中的任一项匹配成功；
    当电子设备处于第三加密等级时，判断身份认证成功的条件为预设身份识别信息摘要与待认证身份信息摘要匹配成功。
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