WO2019087157A1 - Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation - Google Patents

Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation Download PDF

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Publication number
WO2019087157A1
WO2019087157A1 PCT/IB2018/058671 IB2018058671W WO2019087157A1 WO 2019087157 A1 WO2019087157 A1 WO 2019087157A1 IB 2018058671 W IB2018058671 W IB 2018058671W WO 2019087157 A1 WO2019087157 A1 WO 2019087157A1
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substrate
thin film
bonding
previous
consists solely
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PCT/IB2018/058671
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French (fr)
Inventor
Anna Fontcuberta I Morral
Paul RAJRUPA
Andrea GIUNTO
Anna KUKOLOVA
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Ecole Polytechnique Federale De Lausanne (Epfl)
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Publication of WO2019087157A1 publication Critical patent/WO2019087157A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Definitions

  • the present invention is directed to the integration of high quality materials obtained by epitaxy or thin film growth and that do not easily find a substrate matching the lattice constants and/or coefficient of thermal expansion.
  • This process involves thermal treatments for the creation of the covalent bond of the transferred layer with the new substrate but especially for the separation of the layer from the original substrate (see US5374564).
  • This thermal treatment can be problematic if the transferred material decomposes or degrades upon a certain temperature. This would be the case for example of GeSn alloys, but also other materials.
  • the present invention addresses the above-mentioned limitations by providing a method to transfer thin films, comprising the steps of:
  • a first substrate including a thin film attached to the first substrate by a non-covalent force, a non-metallic force or a non-ionic force, or any combination of these; or attached to the first substrate by an attractive force that is of lower strength than a covalent bond, metallic bond or ionic bond;
  • a thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without, for example, need of a Smart-cut type of process, e.g. avoiding the need of ion implantation.
  • the present disclosure makes use of these weak bonds to allow the transfer of the thin film to a device substrate.
  • a substrate as a platform for the growth of the thin film is provided, the interfacial forces between the substrate and a deposited layer is of the non- covalent, non-metallic and/or non-ionic type (e.g. van der Waals).
  • the weak interaction between the substrate and the thin film is used to allow the detachment of the layer from the substrate where it has been grown towards a device substrate.
  • the drawing represents an exemplary flowchart of different processes according to exemplary embodiments of the present invention.
  • identical reference numerals are used, where possible, to designate identical elements that are common to the Figures.
  • a substrate 11 is used such that any thin film 13 grown on top will be bound by non-covalent, non-metallic and/or non-ionic forces e.g. by van der Waals, hydrogen bond.
  • Example substrate 11 bulk substrate such as mica, highly oriented pyrolytic graphite (HOPG), graphite or any layered material such as graphene (monolayer, bilayer, or multilayer), transition metal dichalcogenides, hexagonal boron nitride, which could be free standing or on a supporting substrate such as silicon, oxidized silicon, metal, glass, silicon carbide.
  • HOPG highly oriented pyrolytic graphite
  • graphite or any layered material such as graphene (monolayer, bilayer, or multilayer)
  • transition metal dichalcogenides hexagonal boron nitride
  • thin film 13 is obtained on top of the substrate 11 for example by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), metal organic chemical vapor deposition/epitaxy (MOCVD/MOVPE), thermal or electron-beam evaporation or sputtering.
  • the thin film 13 can consist solely of or comprises of a combination of thin films, for example, ZmF2, ZnP 2 , Ge, Gei- x Sn x , Ge x Si y Sn z , GaN, FeGe, Co x Zn y Mn z , multilayer/superlattice structure or alike. That is, the thin film material is one, but not only, that does not have an easily available commercial substrate that is lattice-matched.
  • the thin film 13 is, for example, attached to the first substrate 11 by an attractive force that is of lower strength than a covalent bond, metallic bond or ionic bond.
  • Step 2 may additionally include rapid annealing to crystallize the layer 13.
  • the duration of the annealing step can be between 1 ns and 30 min depending on the material. It can be performed via a flash lamp, rapid thermal annealing set-up (or equivalent) or a laser.
  • a device substrate 15 is bonded on top of the thin film 13, for example can consist solely of or comprise Si, glass, or a metal foil (device substrate 15 can for example provide additional functionality). Bonding is performed by putting the two pristine and dust-free surfaces of the device substrate 15 and the thin film/substrate stack 13-11 in contact. The initial bonding between the surfaces of the device substrate 15 and the thin layer 13 is van der Waals and becomes covalent after a thermal process that involves the application of pressure perpendicularly to the interface. The thin film forms a stronger bond to the device substrate because of its bond nature with the thin film (ionic, covalent, metallic).
  • the initial bonding between the surfaces of the device substrate 15 and the thin layer 13 can be by van der Waals bonding or weak electrostatic bonds. Following annealing procedure, which includes uniaxial pressure applied perpendicularly to the interface, chemical electronic bonding occurs and this initial bonding becomes covalent, ionic and/or metallic. The device substrate 15 and the surface thin film 13 are held via covalent, ionic and/or metallic bonds.
  • the thin film 13 is mechanically detached from the original substrate 11.
  • the thin film 13 is then solidary with the device substrate 15 and it is not part from the original substrate 11 anymore. Detachment can imply the application of a force at the interface with 11 and the thin film 13, separating the thin film 13 in a direction away from to the original substrate 11.
  • the tools used for this process can be a razor-blade, flat tweezers to name a few.
  • the thin film 13 is bonded (for example, in the same manner as indicated above in relation to step 3) to a polymer substrate 17 to allow easier peel-off from the original substrate 11.
  • the polymer substrate 17 may consist solely of or comprise PMMA (Poly(methyl methacrylate)), SU-8, or PDMS (Polydimethylsiloxane).
  • step 4 b the thin film 13 and polymer substrate 17 are detached (for example by a peel-off process) from the original substrate 11.
  • the thin film 13/polymer substrate 17 duo is bonded to (for example, by joining of the two defect- free, pristine and dust-free surfaces of the thin film 13 and a further foreign substrate 15 so that they form a bond, the initial bonding is for example van der Waals and then becomes covalent after an anneal in the manner set out above) a further foreign substrate 15.
  • the foreign substrate 15 consists solely of or comprises Si, glass, or metal foil (foreign substrate 15 can provide additional functionality).
  • the polymer substrate 17 is peeled-off (the peel-off can be done by mechanically removing the polymer substrate, e.g. with a razor blade) or selectively etched (for example, by plasma etching in an oxygen or chlorine containing gas, or chemically etched) to expose and leave the thin film 13 on the new foreign substrate 15, for example a thickness of 1 ⁇ ; a length of 5 cm and a width of 5 cm.
  • the substrate 11 may include one or multiple layers.
  • the substrate 11 may include different materials.
  • the device substrate 15 and the further the foreign substrate 15 may have similar or identical dimensions.
  • the layer 13 can have a thickness of between lnm and ⁇ . While the invention has been disclosed with reference to certain preferred embodiments, numerous modifications, alterations, and changes to the described embodiments, and equivalents thereof, are possible without departing from the sphere and scope of the invention. The features of any one of the described embodiments may be included in any other of the described embodiments. Accordingly, it is intended that the invention not be limited to the described embodiments and be given the broadest reasonable interpretation in accordance with the language of the appended claims.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without the need of a Smart-cut type of process, e.g. without the need of ion implantation. We propose to make use of these weak bonds to ease the transfer of the thin film to another foreign substrate. This can be performed in two alternative ways: a) by bonding it either directly to the selected foreign substrate and then peeling off from the original growth substrate; b) by bonding it to a polymer layer that eases the peeling of the thin film from the growth substrate; the thin film is then bonded to a foreign substrate and the polymer detached or selectively etched away.

Description

LAYER TRANSFER OF EPITAXIAL LAYERS AND THIN FILMS OBTAINED BY VAN
DER WAALS GROWTH INITIATION CROSS-REFERENCE TO RELATED APPLICATIONS
The present application claims priority to international patent application PCT/IB2017/056861 filed on November 3rd 2017, the entire contents thereof being herewith incorporated by reference. List of co-authors: Anna Fontcuberta i Morral, Rajrupa Paul, Andrea Giunto, Anna Kukolova FIELD OF THE INVENTION
The present invention is directed to the integration of high quality materials obtained by epitaxy or thin film growth and that do not easily find a substrate matching the lattice constants and/or coefficient of thermal expansion.
BACKGROUND
Defect-free hetero-epitaxy of materials exhibiting lattice and/or coefficient of expansion mismatch is currently extremely challenging. Especially, it is difficult is to obtain defect-free interfaces or thin enough buffer layers that do not compromise the quality of the intended device. One of the solutions to this challenge corresponds to the layer transfer technology. Similarly to Smartcut (US5374564, Bruel, Michel, "Process for the production of thin semiconductor material films", published 20 December 1994), it is possible to transfer materials of different composition and nature to a foreign substrate. The thin layer is created by ion implantation of He and/or H ions at a desired depth. This process involves thermal treatments for the creation of the covalent bond of the transferred layer with the new substrate but especially for the separation of the layer from the original substrate (see US5374564). This thermal treatment can be problematic if the transferred material decomposes or degrades upon a certain temperature. This would be the case for example of GeSn alloys, but also other materials. SUMMARY OF THE INVENTION
The present invention addresses the above-mentioned limitations by providing a method to transfer thin films, comprising the steps of:
- providing a first substrate including a thin film attached to the first substrate by a non-covalent force, a non-metallic force or a non-ionic force, or any combination of these; or attached to the first substrate by an attractive force that is of lower strength than a covalent bond, metallic bond or ionic bond;
- positioning a second substrate on top (device substrate)
- applying pressure and temperature to release the thin film from the original substrate onto the device substrate; and
- detaching the thin film and the second substrate (device substrate) from the first substrate.
A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without, for example, need of a Smart-cut type of process, e.g. avoiding the need of ion implantation.
The present disclosure makes use of these weak bonds to allow the transfer of the thin film to a device substrate.
This can be performed for example in two alternative ways: a) by bonding it directly to the device substrate and then detaching it off from the original substrate where growth has been performed; b) by bonding it to a polymer layer or substrate that supports the removal of the thin film from the substrate where growth has been performed; the thin film is then bonded to a device substrate and the polymer is peeled-off or selectively etched away.
In one embodiment of the present invention, a substrate as a platform for the growth of the thin film is provided, the interfacial forces between the substrate and a deposited layer is of the non- covalent, non-metallic and/or non-ionic type (e.g. van der Waals). In another embodiment of the present invention, the weak interaction between the substrate and the thin film is used to allow the detachment of the layer from the substrate where it has been grown towards a device substrate. The above and other objects, features and advantages of the present invention and the manner of realizing them will become more apparent, and the invention itself will best be understood from a study of the following description with reference to the attached drawing showing some preferred embodiments of the invention. A BRIEF DESCRIPTION OF THE DRAWING
The drawing represents an exemplary flowchart of different processes according to exemplary embodiments of the present invention. Herein, identical reference numerals are used, where possible, to designate identical elements that are common to the Figures.
DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS In an exemplary step 1 a substrate 11 is used such that any thin film 13 grown on top will be bound by non-covalent, non-metallic and/or non-ionic forces e.g. by van der Waals, hydrogen bond. Example substrate 11 : bulk substrate such as mica, highly oriented pyrolytic graphite (HOPG), graphite or any layered material such as graphene (monolayer, bilayer, or multilayer), transition metal dichalcogenides, hexagonal boron nitride, which could be free standing or on a supporting substrate such as silicon, oxidized silicon, metal, glass, silicon carbide.
In an exemplary step 2 thin film 13 is obtained on top of the substrate 11 for example by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), metal organic chemical vapor deposition/epitaxy (MOCVD/MOVPE), thermal or electron-beam evaporation or sputtering. The thin film 13 can consist solely of or comprises of a combination of thin films, for example, ZmF2, ZnP2, Ge, Gei-xSnx, GexSiySnz, GaN, FeGe, CoxZnyMnz, multilayer/superlattice structure or alike. That is, the thin film material is one, but not only, that does not have an easily available commercial substrate that is lattice-matched.
The thin film 13 is, for example, attached to the first substrate 11 by an attractive force that is of lower strength than a covalent bond, metallic bond or ionic bond.
Step 2 may additionally include rapid annealing to crystallize the layer 13. The duration of the annealing step can be between 1 ns and 30 min depending on the material. It can be performed via a flash lamp, rapid thermal annealing set-up (or equivalent) or a laser.
In an exemplary step 3 a device substrate 15 is bonded on top of the thin film 13, for example can consist solely of or comprise Si, glass, or a metal foil (device substrate 15 can for example provide additional functionality). Bonding is performed by putting the two pristine and dust-free surfaces of the device substrate 15 and the thin film/substrate stack 13-11 in contact. The initial bonding between the surfaces of the device substrate 15 and the thin layer 13 is van der Waals and becomes covalent after a thermal process that involves the application of pressure perpendicularly to the interface. The thin film forms a stronger bond to the device substrate because of its bond nature with the thin film (ionic, covalent, metallic). The initial bonding between the surfaces of the device substrate 15 and the thin layer 13 can be by van der Waals bonding or weak electrostatic bonds. Following annealing procedure, which includes uniaxial pressure applied perpendicularly to the interface, chemical electronic bonding occurs and this initial bonding becomes covalent, ionic and/or metallic. The device substrate 15 and the surface thin film 13 are held via covalent, ionic and/or metallic bonds.
In an exemplary step 4 a, the thin film 13 is mechanically detached from the original substrate 11. The thin film 13 is then solidary with the device substrate 15 and it is not part from the original substrate 11 anymore. Detachment can imply the application of a force at the interface with 11 and the thin film 13, separating the thin film 13 in a direction away from to the original substrate 11. The tools used for this process can be a razor-blade, flat tweezers to name a few. Alternative embodiment of the present disclosure:
In an exemplary step 3 b: the thin film 13 is bonded (for example, in the same manner as indicated above in relation to step 3) to a polymer substrate 17 to allow easier peel-off from the original substrate 11. For example the polymer substrate 17 may consist solely of or comprise PMMA (Poly(methyl methacrylate)), SU-8, or PDMS (Polydimethylsiloxane).
In an exemplary step 4 b: the thin film 13 and polymer substrate 17 are detached (for example by a peel-off process) from the original substrate 11.
In an exemplary step 5 b: the thin film 13/polymer substrate 17 duo is bonded to (for example, by joining of the two defect- free, pristine and dust-free surfaces of the thin film 13 and a further foreign substrate 15 so that they form a bond, the initial bonding is for example van der Waals and then becomes covalent after an anneal in the manner set out above) a further foreign substrate 15. For example, the foreign substrate 15 consists solely of or comprises Si, glass, or metal foil (foreign substrate 15 can provide additional functionality).
In an exemplary step 6 b: the polymer substrate 17 is peeled-off (the peel-off can be done by mechanically removing the polymer substrate, e.g. with a razor blade) or selectively etched (for example, by plasma etching in an oxygen or chlorine containing gas, or chemically etched) to expose and leave the thin film 13 on the new foreign substrate 15, for example a thickness of 1 μηι; a length of 5 cm and a width of 5 cm. The substrate 11 may include one or multiple layers. The substrate 11 may include different materials. The device substrate 15 and the further the foreign substrate 15 may have similar or identical dimensions.
The layer 13 can have a thickness of between lnm and ΙΟΟμηι. While the invention has been disclosed with reference to certain preferred embodiments, numerous modifications, alterations, and changes to the described embodiments, and equivalents thereof, are possible without departing from the sphere and scope of the invention. The features of any one of the described embodiments may be included in any other of the described embodiments. Accordingly, it is intended that the invention not be limited to the described embodiments and be given the broadest reasonable interpretation in accordance with the language of the appended claims.

Claims

1. Layer transfer method comprising the steps of:
- providing a substrate (11) including a thin film (13) attached to the substrate (11) by a non- covalent force, a non-metallic force or a non-ionic force, or any combination of these; or attached to the first substrate (11) by an attractive force that is of lower strength than a covalent bond, metallic bond or ionic bond;
- growing a thin film on top of the substrate (11) that is attached by bonds that are of van der Waals, hydrogen-bond like or electrostatic type; of significant lower strength than ionic, covalent, or metallic.
- bonding a device substrate (15) to the thin film (13); and
- detaching the thin film (13) and the device substrate (15) from the substrate (11) using a detachment process.
2. Method according to claim 1, wherein the thin film (13) is attached to the substrate (11) by van der Waals force or by hydrogen bonding.
3. Method according to claim 1 or 2, wherein both the thin film (13) and the device substrate (15) together are detached from the substrate (11) using the detachment process.
4. Method according to any one of the previous claims, wherein the detachment process comprises of the removal of the thin film (13) and the device substrate (15) together from the substrate (11).
5. Method according to any one of the previous claims, further including the step of annealing the thin film (13) to crystallize the thin film (13) prior to bonding the device substrate (15).
6. Method according to the previous claims, wherein the step of annealing comprises a rapid annealing using laser energy or a flash lamp exposure of the thin film (13).
7. Method according to any one of the previous claims, wherein the substrate (11) comprises or consists solely of graphite or mica or graphene.
8. Method according to any one of the preceding claims, wherein the thin film (13) is an epitaxial layer.
9. Method according to any one of the preceding claims, wherein the thin film (13) is grown or deposited on the substrate (11) by molecular beam epitaxy (MBE), or metal organic chemical vapor deposit! on/epitaxy (MOCVD/MOVPE) or sputtering.
10. Method according to any one of the preceding claims, wherein the thin film (13) comprises or consists solely of a material that does not have a lattice matched substrate or a widely available lattice matched substrate; or comprises or consists solely of a material that does not have a substrate having a matching thermal expansion coefficient or a widely available substrate having a similar thermal expansion coefficient.
11. Method according to any one of the preceding claims, wherein the thin film (13) comprises or consists solely of Ge, Zn3P2, Gei-xSnx, FeGe, GaN, CoZnMn, superlattice structure or any combination of the above materials.
12. Method according to any one of the preceding claims, wherein the bonding of the device substrate (15) to the thin film (13) is carried out by placing a surface of the thin film (13) in contact with a surface of the device substrate (15) to form an attachment by van der Waals bonding, and then forming a covalent bonding attachment of the surfaces by annealing.
13. Method according to any one of the preceding claims, wherein the device substrate (15) is configured to provide additional functionality.
14. Method according to any one of the preceding claims, wherein the device substrate (15) comprises or consists solely of Si, glass or a metal foil.
15. Method according to any one of preceding claims 1 to 13, further including the steps of:
- bonding the thin film (13) and the polymer substrate (17) to a foreign substrate (15); and
- mechanically peeling-off the polymer substrate (17) from the thin film (13), or selectively etching the polymer substrate (17) to expose the at least one layer.
16. Method according to the previous claim, wherein the second substrate (15) comprises or consists solely of a polymer.
17. Method according to claim 15 or 16, wherein the polymer substrate (17) comprises or consists solely of PMMA, SU8, or PDMS.
18. Method according to any one of the preceding claims 15 to 17, wherein the foreign substrate (15) comprises or consists solely of Si, glass or a metal foil.
19. Method according to any one of the preceding claims 15 to 18, wherein the foreign substrate (15) is configured to provide additional functionality.
20. Method according to any one of the preceding claims 15 to 19, wherein the bonding of the foreign substrate (15) to the thin film (13) is carried out by placing the surface of the thin film (13) in contact with the surface of the foreign substrate (15) to form an attachment by van der Waals bonding, and then forming a covalent bonding attachment of the surfaces by annealing.
21. Method according to any one of the preceding claims 15 to 20, wherein the detachment of the second substrate (15) from the thin film (13) is carried out using a peel-off process.
22. Method according to the previous claims, wherein the peel-off process comprises peeling off the second substrate (15) from the thin film (13).
23. Structure produced by the method of any one of the preceding claims.
24. Device including the structure of the previous claim.
PCT/IB2018/058671 2017-11-03 2018-11-05 Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation WO2019087157A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114177962A (en) * 2022-01-07 2022-03-15 中国科学院青岛生物能源与过程研究所 Method for manufacturing sandwich micro-fluidic chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374564A (en) 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
WO2014026292A1 (en) * 2012-08-15 2014-02-20 Mcmaster University Arbitrarily thin ultra smooth film with built-in separation ability and method of forming the same
US20140291282A1 (en) * 2013-04-02 2014-10-02 International Business Machines Corporation Wafer scale epitaxial graphene transfer
CN104733522A (en) * 2015-04-07 2015-06-24 杭州电子科技大学 AlGaN/GaN HEMT pressure sensor technology implementation method
WO2018195152A1 (en) * 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374564A (en) 1991-09-18 1994-12-20 Commissariat A L'energie Atomique Process for the production of thin semiconductor material films
WO2014026292A1 (en) * 2012-08-15 2014-02-20 Mcmaster University Arbitrarily thin ultra smooth film with built-in separation ability and method of forming the same
US20140291282A1 (en) * 2013-04-02 2014-10-02 International Business Machines Corporation Wafer scale epitaxial graphene transfer
CN104733522A (en) * 2015-04-07 2015-06-24 杭州电子科技大学 AlGaN/GaN HEMT pressure sensor technology implementation method
WO2018195152A1 (en) * 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114177962A (en) * 2022-01-07 2022-03-15 中国科学院青岛生物能源与过程研究所 Method for manufacturing sandwich micro-fluidic chip

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