WO2019072185A1 - 一种增益耦合分布反馈半导体激光器及其制作方法 - Google Patents

一种增益耦合分布反馈半导体激光器及其制作方法 Download PDF

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WO2019072185A1
WO2019072185A1 PCT/CN2018/109593 CN2018109593W WO2019072185A1 WO 2019072185 A1 WO2019072185 A1 WO 2019072185A1 CN 2018109593 W CN2018109593 W CN 2018109593W WO 2019072185 A1 WO2019072185 A1 WO 2019072185A1
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layer
periodic
waveguide layer
gain
substrate
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PCT/CN2018/109593
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English (en)
French (fr)
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陈泳屹
贾鹏
秦莉
宁永强
王立军
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中国科学院长春光学精密机械与物理研究所
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Publication of WO2019072185A1 publication Critical patent/WO2019072185A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Definitions

  • the present invention relates to the field of semiconductor laser fabrication technologies, and in particular, to a gain coupled distributed feedback semiconductor laser and a method of fabricating the same.
  • DFB laser Distributed feedback laser
  • a single longitudinal mode lasing can be achieved by preparing a periodic absorption medium in the active region of the gain coupled DFB laser and introducing periodic losses.
  • the optical waveguide is usually fabricated into a periodic structure by a photolithography process, thereby realizing a single longitudinal mode lasing of the gain-coupled distributed feedback semiconductor laser, but the power-integrated gain-integrated feedback semiconductor laser thus formed has a low power and efficiency. And the spectral line width is wider.
  • the present invention provides a gain-coupled distributed feedback semiconductor laser and a fabrication method thereof to solve the problem that the power-coupled distributed feedback semiconductor laser of the prior art has low power and low spectral line width.
  • the present invention provides the following technical solutions:
  • a method for manufacturing a gain-coupled distributed feedback semiconductor laser comprising:
  • N-face waveguide layer Forming an N-face waveguide layer, an active layer, and a P-plane waveguide layer on the substrate, the P-plane waveguide layer having a convex structure, the P-plane waveguide layer having a convex structure, and the active layer And the N-face waveguide layer constitutes an optical waveguide;
  • a P-side electrode and an N-side electrode were prepared.
  • the method for forming a periodic conductive region along the extending direction of the optical waveguide in the convex structure of the P-plane waveguide layer by using a carrier concentration control method includes:
  • the barrier layer Patterning the barrier layer, the barrier layer opening corresponding to a location where the periodic conductive region is to be formed;
  • the P-plane waveguide layer is subjected to carrier control by ion implantation or carrier diffusion to form the periodic conductive region.
  • the present invention also provides a gain-coupled distributed feedback semiconductor laser fabricated by the fabrication method described above, the gain-coupled distributed feedback laser comprising:
  • the substrate including opposite first and second surfaces;
  • the P-plane waveguide layer of the structure and the active layer and the N-face waveguide layer constitute an optical waveguide;
  • the raised structure has a periodic conductive region formed by carrier control;
  • An N-face electrode located on the second surface of the substrate.
  • the periodic conductive region comprises a plurality of periodic cells, each of the periodic cells comprising a conductive region.
  • the periodic conductive region comprises a plurality of periodic cells, each of the periodic cells comprising a plurality of conductive regions.
  • the protruding structure further has a groove, the extending direction of the groove is the same as the extending direction of the optical waveguide, and the groove divides the optical waveguide into a first periodic conductive region and a second periodic conductive region;
  • the periods of the first periodic conductive region and the second periodic conductive region are different.
  • the invention also provides a method for manufacturing a gain-coupled distributed feedback semiconductor laser, comprising:
  • the P-plane waveguide layer Removing a portion of the highly doped cap layer and the P-plane waveguide layer to form a raised structure, the P-plane waveguide layer having a convex structure and the active layer and the N-face waveguide layer forming an optical waveguide, and located at the a highly doped cap layer of the surface of the raised structure forms a periodic structure along a direction in which the raised structure extends;
  • a P-side electrode and an N-side electrode were prepared.
  • the present invention also provides a gain-coupled distributed feedback semiconductor laser formed by the fabrication method described above, the gain-coupled distributed feedback laser comprising:
  • the substrate including opposite first and second surfaces;
  • the P-plane waveguide layer of the structure and the active layer and the N-face waveguide layer constitute an optical waveguide;
  • the doped concentration of the highly doped cap layer being on the order of 1*10 18 cm -3 to 1*10 19 cm -3 , the highly doped cap layer Forming a periodic conductive region;
  • An N-face electrode located on the second surface of the substrate.
  • the P-face electrode includes a first P-face electrode and a second P-face electrode, and the first P-surface electrode and the second P-face electrode extend in the same direction as the optical waveguide extends;
  • the high-doped cap layer covered by the first P-face electrode forms a first periodic conductive structure
  • the highly doped cap layer covered by the second P-face electrode forms a second periodic conductive structure
  • the periods of the first periodic conductive region and the second periodic conductive region are different.
  • a carrier concentration control method is adopted, and the carrier concentration control method includes The flow-injection is used to prepare a periodic conductive region, or a portion of the original highly conductive layer is periodically removed by etching, oxidation, or the like to form a periodic conductive region. Since the carrier concentration control method does not damage the optical waveguide, the property of the optical waveguide such as stress, oxidation, etc. is changed. Moreover, by using carrier concentration control, high-concentration carriers are formed in a specific region, and no carrier injection is performed in an unnecessary region, so that the loss introduced by carriers is minimized for the entire optical waveguide. Especially when there is a back-end integrated device, low loss can ensure that the energy of the laser is efficiently injected into the back-end integrated device along the optical waveguide, improving energy utilization efficiency.
  • the carrier concentration control has one step less etching process on the optical waveguide, the etching condition is not required to be replaced by the etching material, so that the processing process is simpler and lower, and the processing is reduced. Cost of production.
  • FIG. 1 is a flow chart of a method for fabricating a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a three-dimensional structure of a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional view along line BB' of FIG. 2 of the gain-coupled distributed feedback semiconductor laser after the P-plane waveguide layer is fabricated;
  • FIG. 4 is a schematic cross-sectional view of the gain-coupled distributed feedback semiconductor laser of FIG. 2 taken along line AA of FIG. 2;
  • FIG. 5 is a cross-sectional view of another gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention taken along line AA' of FIG. 2;
  • FIG. 6 is a flowchart of a method for fabricating a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention
  • FIG. 7 is a schematic cross-sectional view of another gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a three-dimensional structure of a gain-coupled distributed feedback semiconductor laser according to an embodiment of the present invention.
  • the reason for the above phenomenon is that when a distributed feedback laser is fabricated in the prior art, the periodic structure of the optical waveguide is usually realized by a photolithography process, thereby introducing periodic loss to realize single longitudinal mode lasing.
  • the damage is often accompanied by the introduction of stress, oxidation and other properties to change the material properties; at the same time, the etching of the optical waveguide couples the energy in a part of the optical waveguide to be diffracted, thereby being in the optical waveguide.
  • the transmitted energy causes losses, reduces power, efficiency, and degrades spectral linewidth.
  • the present invention provides a method for manufacturing a gain coupled distributed feedback laser, comprising:
  • N-face waveguide layer Forming an N-face waveguide layer, an active layer, and a P-plane waveguide layer on the substrate, the P-plane waveguide layer having a convex structure, the P-plane waveguide layer having a convex structure, and the active layer And the N-face waveguide layer constitutes an optical waveguide;
  • a P-side electrode and an N-side electrode were prepared.
  • the carrier concentration control method when the periodic conductive region is fabricated, the carrier concentration control method is adopted, and the carrier concentration control method does not damage the optical waveguide, thereby The properties of optical waveguides such as stress and oxidation are introduced. Moreover, by using carrier concentration control, high-concentration carriers are formed in a specific region, and no carrier injection is performed in an unnecessary region, so that the loss introduced by carriers is minimized for the entire optical waveguide. Especially when there is a back-end integrated device, low loss can ensure that the energy of the laser is efficiently injected into the back-end integrated device along the optical waveguide, improving energy utilization efficiency.
  • the carrier concentration control has one step less etching process on the optical waveguide, the etching condition is not required to be replaced by the etching material, so that the processing process is simpler and lower, and the processing is reduced. Cost of production.
  • the present invention provides a method for fabricating a gain-coupled distributed feedback semiconductor laser, as shown in FIG. 1 , which is a schematic flowchart of the manufacturing method, as shown in FIG. 2 , which is a three-dimensional schematic diagram of a final gain-coupled distributed feedback semiconductor laser; include:
  • the substrate may be an InP substrate or a GaAs substrate.
  • S102 sequentially forming an N-face waveguide layer, an active layer, and a P-plane waveguide layer on the substrate, the P-plane waveguide layer having a convex structure, and the P-plane waveguide layer having a convex structure and the The source layer and the N-face waveguide layer constitute an optical waveguide.
  • an N-face waveguide layer 12, an active layer 13, and a P-plane waveguide layer 14 are sequentially formed on the substrate 11, wherein the P-plane waveguide layer 14 is formed.
  • the upper surface has a convex structure 15A, and the P-plane waveguide layer 14 having the convex structure 15A and the active layer 13 and the N-face waveguide layer constitute an optical waveguide structure.
  • the P-plane waveguide layer having the convex structure, the active layer and the N-face waveguide layer form a ridge-type optical waveguide
  • the P-plane waveguide layer having the convex structure includes a full-layer P-plane waveguide layer on the surface of the active layer and a raised structure protruding from the entire P-plane waveguide layer.
  • the method for fabricating the N-face waveguide layer 12, the active layer 13 and the P-plane waveguide layer 14 is not limited, and alternatively, the MOCVD (Metal-organic Chemical Vapor Deposition) process is used. The growth of each layer.
  • MOCVD Metal-organic Chemical Vapor Deposition
  • the specific structure of the active layer 13 is not limited in this embodiment, and may be a single quantum well structure or a multiple quantum well structure, and includes a plurality of barriers and potential well materials, which are not limited in this embodiment.
  • FIG. 4 it is a cross-sectional view along the line AA' in FIG. 2; a periodic conductive structure 15 having a period of ⁇ is formed on the P-plane waveguide layer 14 by a carrier concentration control method.
  • the specific manufacturing method of the periodic conductive structure in this embodiment includes: forming a barrier layer on the P-plane waveguide layer; patterning the barrier layer, the barrier layer opening corresponding to the periodicity to be formed The location of the conductive area.
  • patterning the barrier layer includes forming an opening on the barrier layer by a photolithography, dry or wet etching process, where the opening region is a position where a periodic conductive region needs to be formed by an ion implantation process. .
  • the P-plane waveguide layer is subjected to carrier control by ion implantation or carrier diffusion to form the periodic conductive region.
  • an ion implantation method or a carrier diffusion process is employed. Since a photolithography process is not required to form a periodic conductive structure, no damage is caused to the optical waveguide, and high-concentration carriers are formed in a specific region. No carrier injection is required in the required area, so that the loss introduced by the carrier is minimized for the entire optical waveguide, especially when there is a back-end integrated device, the low loss can ensure that the energy of the laser is efficient along the optical waveguide. Injection into the back-end integrated device increases energy efficiency.
  • S104 preparing a P-side electrode and an N-side electrode.
  • a P-plane electrode and an N-face electrode are formed, and a P-plane electrode is directly formed on the P-plane waveguide layer by a magnetron sputtering process.
  • the N-side electrode is located on the other surface of the substrate.
  • the substrate is thinned to the required thickness of the gain-coupled distributed feedback laser by a thinning process, and then the surface is polished.
  • the N is fabricated by a magnetron sputtering process. Surface electrode.
  • the periodic conductive region described in this embodiment provides an ohmic contact for the P-plane waveguide layer and the P-plane electrode, and improves the conductivity of the region of the medium.
  • the material of the substrate 11, the N-plane waveguide layer 12, the active layer 13, the P-plane waveguide layer 14, the periodic conductive region 15, the P-surface electrode 16, and the N-face electrode 17 are not limited in this embodiment, and may be based on actual structures and Material Characteristics Selection
  • the N-face waveguide layer 12 in this embodiment is N-type doped, and the P-face waveguide layer 14 is an undoped semi-insulating material.
  • a gain-coupled distributed feedback semiconductor laser provided in the present embodiment is a schematic cross-sectional view along the extending direction of the convex structure.
  • the gain-coupled distributed feedback semiconductor laser includes a substrate 11 including a relative arrangement. a first surface and a second surface; an N-face waveguide layer 12, an active layer 13, and a P-plane waveguide layer 14 disposed on the first surface of the substrate in a direction away from the substrate surface, wherein the P-plane waveguide layer 14
  • the P-plane waveguide layer 14 having a convex structure and the active layer 13 and the N-face waveguide layer 12 constitute an optical waveguide;
  • the convex structure has a periodic conductive region 15; and the P-plane electrode 16 on the convex structure An N-face electrode 17 located on the second surface of the substrate 11.
  • the period of the periodic conductive region 15 is ⁇
  • the lasing wavelength of the gain-coupled distributed feedback semiconductor laser satisfies the formula:
  • ⁇ is the operating wavelength of the gain-coupled distributed feedback semiconductor laser
  • ⁇ is the period of the periodic conductive region
  • N eff is the effective refractive index of the optical waveguide in the gain-coupled distributed feedback semiconductor laser
  • N is the gain-coupled distributed feedback semiconductor laser The wavelength order of the shot, where N is a positive integer greater than two.
  • the carrier concentration of the P-plane waveguide layer is controlled by an ion implantation method or a carrier diffusion process, thereby realizing periodic distribution of carriers in the active region of the semiconductor laser, and forming a distributed feedback semiconductor with a gain coupling mechanism. Laser.
  • the depth of the periodic conductive region is controlled by ion implantation or carrier concentration without being realized by etching, so that changes in the properties of the optical waveguide such as stress, oxidation, and the like can be avoided.
  • the carrier concentration control since the carrier concentration control has one step less etching process on the optical waveguide, the etching condition is not required to be replaced by the etching material, which makes the processing process simpler and reduces the production cost. .
  • a periodic distribution of carriers in the active region of the semiconductor laser is realized, and a distributed feedback semiconductor laser with a gain coupling mechanism is formed, which can realize single-sided lasing by coating, thereby solving the existing
  • the technical device has a complicated process and bilateral lasing problems, which reduces the process difficulty and improves the lasing power and energy utilization efficiency.
  • N eff * ⁇ N* ⁇ /2, where N is a positive integer greater than 2, representing a periodic order, indicating that the device is a high-order period, and the longer the corresponding period,
  • the carrier concentration-controlled gain-coupled distributed feedback semiconductor laser formed in the embodiment of the present invention can be used to prepare a protective film on both end faces without preparing a coating film, or can prepare a high-reflection film or anti-reflection on both end faces. Reflective film.
  • the periodic length of the periodic conductive region in the embodiment is allowed to be ⁇ .
  • the periodic conductive region includes a plurality of periodic cells, and each of the periodic cells includes one conductive region.
  • each of the periodic units may be a composite structure including a plurality of conductive regions, wherein the structures of the plurality of conductive regions in all of the periodic cells are the same, but the specific structure of the composite structure is not limited in this embodiment.
  • the structure may be a composite structure including a plurality of periodic conductive regions, or may be a composite structure including a plurality of non-periodic conductive regions, such as including a plurality of conductive regions, but the intervals between the plurality of conductive regions are inconsistent, and the composition is non- Periodic structure.
  • the P-side electrode 14 includes a plurality of periodic cells, and each of the periodic cells includes three periodic conductive regions 15' to constitute a sampling period.
  • the materials and manufacturing processes of the respective structures of the gain-coupled distributed feedback semiconductor laser are not limited.
  • the fabrication process and material selection in the above embodiments may be referred to.
  • each sub-structure of the periodic conductive region has a sub-structure, thereby forming a sampling period, dual-wavelength or multi-wavelength lasing can be realized, and if a structure or technique such as integrated gain switch or Q-value regulation is used to increase the pulse peak value
  • nonlinear applications such as difference frequency, frequency multiplication, and frequency conversion can be realized by using semiconductor materials.
  • the invention also provides another method for fabricating a gain-coupled distributed feedback semiconductor laser, the flow chart of which is shown in FIG. 6 and includes:
  • S202 sequentially forming an N-face waveguide layer, an active layer, a P-plane waveguide layer, and a highly doped cap layer on the substrate, wherein the doping concentration of the highly doped cap layer is 1*10 18 cm -3 ⁇ 1*10 19 cm -3 order of magnitude;
  • S203 removing a portion of the highly doped cap layer and the P-plane waveguide layer to form a convex structure, wherein the P-plane waveguide layer having the convex structure and the active layer and the N-face waveguide layer constitute an optical waveguide, And a highly doped cap layer on the surface of the raised structure forms a periodic structure along a direction in which the raised structure extends;
  • the insulating dielectric layer is formed in a region other than the highly doped cap layer, and specifically includes:
  • the upper surface of the periodic conductive structure is exposed by photolithography and etching to expose the highly doped cap layer, thereby forming an insulating dielectric layer in a region other than the highly doped cap layer.
  • S205 preparing a P-side electrode and an N-side electrode.
  • FIG. 7 is a cross-sectional view of the gain-coupled distributed feedback semiconductor laser along the extending direction of the optical waveguide.
  • the active layer 23, and the P-plane waveguide layer 24 is completed on the substrate 21, a high-doped cap layer on the P-plane waveguide layer 24 is first formed.
  • the P-plane waveguide layer having a convex structure and the The source layer and the N-face waveguide layer constitute an optical waveguide, and the remaining highly doped cap layer in the embodiment forms a periodic conductive structure 25 along the extending direction of the optical waveguide, and then the insulating medium 28 is prepared and photolithographically engraved The etched mode exposes the upper surface of the periodic conductive structure 25, and then gold is grown on the highly doped cap layer to form a P-face electrode, and an N-face electrode is formed on the other surface of the substrate to finally form a periodic conductive structure.
  • Distribution feedback Device is
  • a gain-coupled distributed feedback semiconductor laser is further provided, which is formed by the above manufacturing method.
  • the gain-coupled distributed feedback laser includes:
  • the substrate 21 including opposite first and second surfaces;
  • the doped concentration of the highly doped cap layer being on the order of 1*10 18 cm -3 to 1*10 19 cm -3 , the highly doped cap layer Forming a periodic conductive region 25;
  • An N-face electrode 27 located on the second surface of the substrate.
  • the material of each structure of the gain-coupled distributed feedback semiconductor laser and the fabrication process are not limited.
  • the substrate 21 is made of GaN material, the N-face waveguide layer 22, the active layer 23 and the P-plane waveguide layer 24, and the large The area of the highly doped cap layer is formed by MBE epitaxy.
  • the N-face waveguide layer 22 is N-type doped
  • the active layer 23 is a multiple quantum well, and includes a plurality of barriers and potential well materials
  • the P-plane waveguide layer 24 is a P-type doped conductive material, doping concentration On the order of 1*10 15 cm -3 to 1*10 17 cm -3 , the doping concentration of the large-area highly doped cap layer is on the order of 1*10 18 cm -3 to 1*10 19 cm -3 .
  • the material of the periodic conductive region is also prepared by crystal epitaxial growth, and the P-plane waveguide layer is P-type lightly doped, it is suitable for purchase in the market. Ready-made chips are processed and prepared.
  • the P-plane electrode on the convex structure may further include a first P-surface electrode and a second P-side electrode.
  • the extending direction of the first P-surface electrode and the second P-surface electrode is the same as the extending direction of the optical waveguide; wherein the highly doped cap layer covered by the first P-face electrode forms a first periodic conductive
  • the high-doped cap layer covered by the second P-face electrode forms a second periodic conductive structure; the periods of the first periodic conductive region and the second periodic conductive region are different.
  • the gain-coupled distributed feedback semiconductor laser includes a substrate 31, an N-face waveguide layer 32 on the substrate 31, an active region 33, a P-plane waveguide layer 34, and a P-plane waveguide layer 34.
  • the formation manner of the periodic conductive structure is not limited.
  • the periodic conductive structure is formed by a carrier concentration control method or formed by a highly doped cap layer when passing through a high doping layer.
  • the gain coupling distributed feedback semiconductor laser further includes an insulating dielectric layer (not shown).
  • the protruding structure 35 further includes a first P-surface electrode and a second P-surface electrode which are the same as the extending direction of the optical waveguide, and the high-doped cap layer covered by the first P-surface electrode is formed.
  • a first periodic conductive structure, the high-doped cap layer covered by the second P-face electrode forms a second periodic conductive structure; wherein periods of the first periodic conductive region and the second periodic conductive region Not the same.
  • the period of one periodic conductive region is ⁇ 1
  • the period of the other periodic conductive region is ⁇ 2
  • the lasing wavelengths of the two periodic conductive regions satisfy the formula:
  • ⁇ i is the operating wavelength of the corresponding periodic conductive region in the gain-coupled distributed feedback semiconductor laser
  • ⁇ i the period of the corresponding periodic conductive region in the gain-coupled distributed feedback semiconductor laser
  • N eff is the gain-coupled distributed feedback semiconductor laser

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Abstract

本申请提供一种增益耦合分布反馈半导体激光器及其制作方法，所述制作方法通过对P面载流子浓度分布进行周期性调控，比如通过载流子注入制备周期性导电区域，或者通过刻蚀、氧化等手段周期性的去掉原本高导电层的部分结构形成周期性导电区域；由于载流子浓度控制方式不会对光波导造成损坏，从而避免引入应力、氧化等光波导的性质改变。而且，采用载流子浓度控制，在特定区域内形成高浓度载流子，在不需要的区域内没有载流子注入，这样对整条光波导而言载流子引入的损耗降到了最低，尤其是有后端集成设备的时候，低损耗可以保证激光器的能量沿着光波导高效注入到后端集成设备中，提高了能量利用效率。

Description

一种增益耦合分布反馈半导体激光器及其制作方法
本申请要求于2017年10月13日提交中国专利局、申请号为201710951488.X、发明名称为“一种增益耦合分布反馈半导体激光器及其制作方法”的国内申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体激光器制作技术领域，尤其涉及一种增益耦合分布反馈半导体激光器及其制作方法。
背景技术
分布反馈激光器(DFB激光器)是一种单纵模激光器，有鉴于其优良的光谱特性，在激光通讯、物联网、互联网、空间通讯、气体探测、海洋探测等领域有着广阔的应用市场。
由于现有商用DFB激光器受限于折射率耦合原理，全同光栅结构通常有2个激射峰，难以实现单纵模工作等问题，不能满足很多应用领域的需求。为解决单纵模激射问题，可以通过在增益耦合DFB激光器的有源区内制备周期性的吸收介质，引入周期性的损耗来实现单纵模激射。
现有技术中通常通过光刻工艺将光波导制作成周期性结构，从而实现增益耦合分布反馈半导体激光器的单纵模激射，但这样制作形成的增益耦合分布反馈半导体激光器的功率、效率较低，且光谱线宽较宽。
发明内容
有鉴于此，本发明提供一种增益耦合分布反馈半导体激光器及其制作方法，以解决现有技术中增益耦合分布反馈半导体激光器存在功率、效率较低，且劣化光谱线宽的问题。
为实现上述目的，本发明提供如下技术方案：
一种增益耦合分布反馈半导体激光器制作方法，包括：
提供衬底；
在所述衬底上依次形成N面波导层、有源层、P面波导层，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；
采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域；
制备P面电极和N面电极。
优选地，所述采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域，具体包括：
在所述P面波导层上制作阻挡层；
图案化所述阻挡层，所述阻挡层开口对应待形成所述周期性导电区域的位置；
采用离子注入或者载流子扩散方式，对所述P面波导层进行载流子控制，形成所述周期性导电区域。
本发明还提供一种增益耦合分布反馈半导体激光器，采用上面所述的制作方法制作形成，所述增益耦合分布反馈激光器包括：
衬底，所述衬底包括相对设置的第一表面和第二表面；
位于所述衬底第一表面上沿背离所述衬底表面的方向依次设置的N面波导层、有源层、P面波导层，其中，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；所述凸起结构具有通过载流子控制形成的周期性导电区域；
位于所述凸起结构上的P面电极；
位于所述衬底第二表面的N面电极。
优选地，所述周期性导电区域包括多个周期单元，每个所述周期单元包括一个导电区域。
优选地，所述周期性导电区域包括多个周期单元，每个所述周期单元包括多个导电区域。
优选地，所述凸起结构上还具有凹槽，所述凹槽的延伸方向与所述光波导的延伸方向相同，且所述凹槽将所述光波导分为第一周期性导电区域 和第二周期性导电区域；
其中，所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。
本发明还提供一种增益耦合分布反馈半导体激光器制作方法，包括：
提供衬底；
在所述衬底上依次形成N面波导层、有源层、P面波导层和高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级；
去除部分高掺杂盖层和P面波导层，形成凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导，且位于所述凸起结构表面的高掺杂盖层形成沿所述凸起结构延伸方向的周期性结构；
在所述高掺杂盖层之外的区域形成绝缘介质层；
制备P面电极和N面电极。
本发明还提供一种增益耦合分布反馈半导体激光器，采用上面所述的制作方法形成，所述增益耦合分布反馈激光器包括：
衬底，所述衬底包括相对设置的第一表面和第二表面；
位于所述衬底第一表面上沿背离所述衬底表面的方向依次设置的N面波导层、有源层、P面波导层，其中，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；
位于所述凸起结构上的高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级，所述高掺杂盖层形成周期性导电区域；
覆盖所述高掺杂盖层之外区域的绝缘介质层；
位于所述高掺杂盖层上的P面电极；
位于所述衬底第二表面的N面电极。
优选地，所述P面电极包括第一P面电极和第二P面电极，所述第一P面电极和所述第二P面电极的延伸方向与所述光波导的延伸方向相同；
其中，所述第一P面电极覆盖的高掺杂盖层形成第一周期性导电结构，所述第二P面电极覆盖的高掺杂盖层形成第二周期性导电结构；
所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。
经由上述的技术方案可知，本发明提供的增益耦合分布反馈半导体激光器的制作方法中，在制作周期性导电区域时，采用的是载流子浓度控制方式，所述载流子浓度控制方式包括载流子注入制备周期性导电区域，或者通过刻蚀、氧化等手段周期性的去掉原本高导电层的部分结构形成周期性导电区域。由于载流子浓度控制方式不会对光波导造成损坏，从而避免引入应力、氧化等光波导的性质改变。而且，采用载流子浓度控制，在特定区域内形成高浓度载流子，在不需要的区域内没有载流子注入，这样对整条光波导而言载流子引入的损耗降到了最低，尤其是有后端集成设备的时候，低损耗可以保证激光器的能量沿着光波导高效注入到后端集成设备中，提高了能量利用效率。
另外，相对于现有技术中的表面光栅，由于载流子浓度控制少了一步对光波导的刻蚀工艺，从而无需因刻蚀材料不同而更换刻蚀条件，使得加工工艺更加简便，降低了生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为本发明实施例提供的一种增益耦合分布反馈半导体激光器的制作方法流程图；
图2为本发明实施例提供的增益耦合分布反馈半导体激光器三维结构示意图；
图3为制作完P面波导层后的增益耦合分布反馈半导体激光器的沿图2中BB’截面示意图；
图4为本发明实施例提供的增益耦合分布反馈半导体激光器沿图2中AA’截面示意图；
图5为本发明实施例提供的另一种增益耦合分布反馈半导体激光器沿 图2中AA’截面示意图；
图6为本发明实施例提供的另一种增益耦合分布反馈半导体激光器的制作方法流程图；
图7为本发明实施例提供的另一种增益耦合分布反馈半导体激光器的截面示意图；
图8为本发明实施例提供的又一种增益耦合分布反馈半导体激光器三维结构示意图。
具体实施方式
正如背景技术部分所述，现有技术中增益耦合分布反馈半导体激光器的功率、效率较低，且光谱线宽较宽。
发明人发现，出现上述现象的原因是，现有技术中制作分布反馈激光器时，通常通过光刻工艺实现光波导的周期性结构，从而引入周期性的损耗来实现单纵模激射。但是由于光刻工艺对光波导造成损坏，这种损坏往往伴随着引入应力、氧化等性质改变材料属性；同时对光波导的刻蚀会耦合一部分光波导内的能量进行衍射，从而对光波导中传输的能量造成损耗，降低功率、效率，劣化光谱线宽。
基于此，本发明提供一种增益耦合分布反馈激光器制作方法，包括：
提供衬底；
在所述衬底上依次形成N面波导层、有源层、P面波导层，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；
采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域；
制备P面电极和N面电极。
本发明提供的增益耦合分布反馈半导体激光器的制作方法中，在制作周期性导电区域时，采用的是载流子浓度控制方式，由于载流子浓度控制方式不会对光波导造成损坏，从而不会引入应力、氧化等光波导的性质改变。而且，采用载流子浓度控制，在特定区域内形成高浓度载流子，在不 需要的区域内没有载流子注入，这样对整条光波导而言载流子引入的损耗降到了最低，尤其是有后端集成设备的时候，低损耗可以保证激光器的能量沿着光波导高效注入到后端集成设备中，提高了能量利用效率。
另外，相对于现有技术中的表面光栅，由于载流子浓度控制少了一步对光波导的刻蚀工艺，从而无需因刻蚀材料不同而更换刻蚀条件，使得加工工艺更加简便，降低了生产成本。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
本发明提供一种增益耦合分布反馈半导体激光器制作方法，如图1所示，为所述制作方法流程示意图，如图2所示，为最终增益耦合分布反馈半导体激光器的三维示意图；所述制作方法包括：
S101：提供衬底；
本实施例中不限定衬底的具体材质，可选的，所述衬底可以为InP衬底或者GaAs衬底。
S102：在所述衬底上依次形成N面波导层、有源层、P面波导层，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导。
请参见图3所示，为沿图2中BB’线的截面图，在衬底11上依次形成N面波导层12、有源层13、P面波导层14，其中，P面波导层14上具有凸起结构15A，具有凸起结构15A的P面波导层14与有源层13和N面波导层构成光波导结构。具有凸起结构的P面波导层、有源层和N面波导层形成脊型光波导，所述具有凸起结构的P面波导层包括位于有源层表面的整层P面波导层以及相对于所述整层的P面波导层突出的凸起结构。
本实施例中不限定N面波导层12、有源层13和P面波导层14的制作方法，可选的，采用MOCVD(Metal-organic Chemical Vapor Deposition，金属有机化合物化学气相淀积)工艺进行各层的生长。
本实施例中不限定有源层13的具体结构，可以是单量子阱结构也可以是多量子阱结构，包含多层势垒和势阱材料，本实施例中对此不作限定。
S103：采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域；
请参见图4所示，为沿图2中AA’线的截面图；采用载流子浓度控制方式在P面波导层14上形成周期为Λ的周期性导电结构15。
需要说明的是，本实施例中周期性导电结构的具体制作方法包括：在所述P面波导层上制作阻挡层；图案化所述阻挡层，所述阻挡层开口对应待形成所述周期性导电区域的位置。
具体地，图案化所述阻挡层包括通过光刻、干法或湿法刻蚀工艺在所述阻挡层上制作开口，所述开口区域即为后续需要通过离子注入工艺形成周期性导电区域的位置。
采用离子注入或载流子扩散方式，对所述P面波导层进行载流子控制，形成所述周期性导电区域。
本实施例中采用离子注入方式或载流子扩散工艺，由于不需要光刻工艺形成周期性导电结构，则对光波导不会造成损伤，而且在特定区域内形成高浓度载流子，在不需要的区域内没有载流子注入，这样对整条光波导而言载流子引入的损耗降到了最低，尤其是有后端集成设备的时候，低损耗可以保证激光器的能量沿着光波导高效注入到后端集成设备中，提高了能量利用效率。
S104：制备P面电极和N面电极。
在完成周期性导电结构制作后，制作形成P面电极和N面电极，其中，在P面波导层上直接采用磁控溅射工艺制作P面电极。
而N面电极位于衬底的另一个表面，首先，通过减薄工艺，将衬底减薄至增益耦合分布反馈激光器的要求厚度，然后再进行表面抛光，最后，通过磁控溅射工艺制作N面电极。
本实施例中所述的周期性导电区域为P面波导层和P面电极提供欧姆接触，并且提高该区域介质的导电性。本实施例中不限定衬底11、N面波导层12、有源层13、P面波导层14，周期性导电区域15、P面电极16，N面电极17的材质，可以依据实际结构和材料特性选择使用本实施例中N面波导层12是N型掺杂的，P面波导层14是非掺杂的半绝缘材料。
如图4所示，为本实施例中提供的增益耦合分布反馈半导体激光器，沿凸起结构的延伸方向截面示意图；所述增益耦合分布反馈半导体激光器包括：衬底11，衬底11包括相对设置的第一表面和第二表面；位于衬底第一表面上沿背离衬底表面的方向依次设置的N面波导层12、有源层13、P面波导层14，其中，P面波导层14具有凸起结构，具有凸起结构的P面波导层14与有源层13和N面波导层12构成光波导；凸起结构具有周期性导电区域15；位于凸起结构上的P面电极16；位于衬底11第二表面的N面电极17。其中，周期性导电区域15的周期为Λ，该增益耦合分布反馈半导体激光器的激射波长满足公式：
N eff*Λ＝N*λ/2
其中，λ为增益耦合分布反馈半导体激光器的工作波长，Λ为周期性导电区域的周期，N eff为增益耦合分布反馈半导体激光器内的光波导的有效折射率，N为增益耦合分布反馈半导体激光器激射的波长阶数，其中，N为大于2的正整数。
本实施例中通过离子注入方式或载流子扩散工艺，控制P面波导层的载流子浓度，从而实现半导体激光器有源区内载流子的周期性分布，形成增益耦合机制的分布反馈半导体激光器。
本实施例中通过离子注入或载流子浓度控制周期性导电区域的深度，无需通过刻蚀实现，从而能够避免引入应力、氧化等光波导的性质改变。相对于现有技术中的表面光栅，由于载流子浓度控制少了一步对光波导的刻蚀工艺，从而无需因刻蚀材料不同而更换刻蚀条件，使得加工工艺更加简便，降低了生产成本。
本实施例中通过制备周期性高导电区域，实现半导体激光器有源区内载流子的周期性分布，形成增益耦合机制的分布反馈半导体激光器，可通 过镀膜实现单面激射，解决了现有技术器件工艺复杂、双边激射的问题，降低了工艺难度，提高了激射功率和能量利用效率。
在布拉格波长激射波长λ激射时满足公式：N eff*Λ＝N*λ/2，其中N为大于2的正整数，代表周期阶数，表明器件是高阶周期，对应周期越长，加工尺寸越大，提高了制作容差，无需昂贵精密的二次外延工艺或纳米光栅或复杂光栅制备技术，仅需常规光刻工艺，降低了制作成本，提高了成品率，容易实现大批量生产和商业化推广。
另外，本发明实施例中形成的载流子浓度控制增益耦合分布反馈半导体激光器可以不经过镀膜处理，可以在两端腔面制备保护性膜，也可以在两端腔面制备高反射膜或抗反射膜。且本实施例中周期性导电区域的周期长度允许有啁啾，如图4所示，周期性导电区域包括多个周期单元，每个所述周期单元包括一个导电区域。在本发明的其他实施例中，每个周期单元可以是复合结构，包括多个导电区域，其中，所有周期单元中的多个导电区域的结构相同，但本实施例中不限定复合结构的具体结构，可以是包括多个周期性导电区域的复合结构，也可以是包括多个非周期性导电区域的复合结构，如包括多个导电区域，但是多个导电区域之间的间隔不一致，组成非周期性结构。
具体的，请参见图5所示，P面电极14中包括多个周期单元，每个周期单元包括三个周期性导电区域15’，从而构成取样周期。
本实施例中不限定增益耦合分布反馈半导体激光器的各个结构的材质以及制作工艺，可选的，可以参见上面实施例中的制作工艺以及材质选择。
本实施例中，由于周期性导电区域的每个周期中都有子结构，因而构成取样周期，可以实现双波长或者多波长激射，如果集成增益开关或Q值调控等结构或技术提高脉冲峰值功率，则可以利用半导体材料实现非线性应用，比如差频、倍频、合频的转换等。
本发明还提供另外一种增益耦合分布反馈半导体激光器制作方法，其流程图如图6所示，包括：
S201：提供衬底；
S202：在所述衬底上依次形成N面波导层、有源层、P面波导层和高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级；
S203：去除部分高掺杂盖层和P面波导层，形成凸起结构，所述具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导，且位于所述凸起结构表面的高掺杂盖层形成沿所述凸起结构延伸方向的周期性结构；
S204：在所述高掺杂盖层之外的区域形成绝缘介质层；
本实施例中，在所述高掺杂盖层之外的区域形成绝缘介质层，具体包括：
制备整层结构的绝缘介质层；
再通过光刻、刻蚀方式裸露出周期性导电结构的上表面，将高掺杂盖层裸露出来，从而在高掺杂盖层之外的区域形成绝缘介质层。
S205：制备P面电极和N面电极。
从上面的制作步骤可以看出，本实施例中与上面实施例中制作周期性导电结构的方式不同，请参见图7，图7为增益耦合分布反馈半导体激光器沿光波导的延伸方向的截面图，本实施例中在衬底21上制作完成N面波导层22、有源层23、P面波导层24的制作后，在P面波导层24上的先制作出整面高掺杂盖层，然后通过光刻、干法/湿法刻蚀、通常半导体工艺，去除部分高掺杂盖层和P面波导层，形成凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导，且本实施例中剩余的高掺杂盖层形成沿光波导的延伸方向的周期性导电结构25，然后制备绝缘介质28并通过光刻、刻蚀方式裸露出周期性导电结构25的上表面，然后再在高掺杂盖层上生长金，形成P面电极，以及在衬底的另一个表面制作N面电极，最终形成具有周期性导电结构的分布反馈激光器。
对应地，本实施例中还提供一种增益耦合分布反馈半导体激光器，采用上述制作方法形成，如图7所示，所述增益耦合分布反馈激光器包括：
衬底21，所述衬底21包括相对设置的第一表面和第二表面；
位于所述衬底第一表面上沿背离所述衬底表面的方向依次设置的N面 波导层22、有源层23、P面波导层24，其中，所述P面波导层24具有凸起结构，具有凸起结构的所述P面波导层24与所述有源层23和所述N面波导层构成22构成光波导；
位于所述凸起结构上的高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级，所述高掺杂盖层形成周期性导电区域25；
覆盖所述高掺杂盖层之外区域的绝缘介质层28；
位于所述高掺杂盖层上的P面电极26；
位于所述衬底第二表面的N面电极27。
本实施例中不限定增益耦合分布反馈半导体激光器的各个结构的材质以及制作工艺，可选的，衬底21为GaN材质，N面波导层22、有源层23和P面波导层24以及大面积的高掺杂盖层采用MBE外延方式制备形成。其中，N面波导层22是N型掺杂的，有源层23是多量子阱，包含多层势垒和势阱材料，P面波导层24是P型掺杂的导电材料，掺杂浓度在1*10 15cm -3～1*10 17cm -3数量级，大面积高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级。
与上一实施例不同的是，本实施例中，由于周期性导电区域的材料也是通过晶体外延生长方式制备的，并且P面波导层是P型轻掺杂的，因而适合于在市面上购买现成芯片进行加工制备。
需要说明的是，本发明上面两个实施例中提供的制作方法形成的增益耦合分布反馈半导体激光器中，凸起结构上的P面电极还可以包括第一P面电极和第二P面电极，所述第一P面电极和所述第二P面电极的延伸方向与所述光波导的延伸方向相同；其中，所述第一P面电极覆盖的高掺杂盖层形成第一周期性导电结构，所述第二P面电极覆盖的高掺杂盖层形成第二周期性导电结构；所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。
具体的，如图8所示，增益耦合分布反馈半导体激光器包括衬底31，位于衬底31上的N面波导层32、有源区33、P面波导层34，P面波导层34上具有凸起结构35，以及位于凸起结构上的P面电极36和位于衬底31另一个表面 的N面电极37。
需要说明的是，本实施例中不限定周期性导电结构的形成方式，可选的，周期性导电结构采用载流子浓度控制方式形成或者通过高掺杂的盖层形成，当通过高掺杂盖层形成时，所述增益耦合分布反馈半导体激光器还包括绝缘介质层(图中未示出)。
另外，本实施例中凸起结构35上还包括与所述光波导的延伸方向相同的第一P面电极和第二P面电极，所述第一P面电极覆盖的高掺杂盖层形成第一周期性导电结构，所述第二P面电极覆盖的高掺杂盖层形成第二周期性导电结构；其中，所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。如图8所示，一个周期性导电区域的周期为Λ 1，另一个周期性导电区域的周期为Λ 2，其中，两个周期性导电区域的激射波长满足公式：
N eff*Λ i＝N*λ i/2
其中，λ i为增益耦合分布反馈半导体激光器中对应的周期性导电区域的工作波长，Λ i为增益耦合分布反馈半导体激光器中对应的周期性导电区域的周期，N eff为增益耦合分布反馈半导体激光器内的光波导的有效折射率，N为增益耦合分布反馈半导体激光器激射的波长阶数，其中，N为大于2的正整数，i＝1，2。
本实施例中，由于具有两种周期结构，通过两侧P面电极分别注入电流，因而可以通过调整注入电流方式，使得同一个激光器分别工作在不同的波长。还可以通过调整注入电流区域，实现不同波长分别激射，也可以通过温度和电流的控制对波长进行调谐，在同样长度的单个激光器上获得更高的调谐范围，简化了封装工艺。同样，可以利用半导体材料实现非线性应用，比如差频、倍频、合频的转换等。
需要说明的是，本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显 而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (9)

  1. 一种增益耦合分布反馈半导体激光器制作方法，其特征在于，包括：
    提供衬底；
    在所述衬底上依次形成N面波导层、有源层、P面波导层，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；
    采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域；
    制备P面电极和N面电极。
  2. 根据权利要求1所述的增益耦合分布反馈半导体激光器制作方法，其特征在于，所述采用载流子浓度控制方式在所述P面波导层的凸起结构沿所述光波导的延伸方向形成周期性导电区域，具体包括：
    在所述P面波导层上制作阻挡层；
    图案化所述阻挡层，所述阻挡层开口对应待形成所述周期性导电区域的位置；
    采用离子注入或者载流子扩散方式，对所述P面波导层进行载流子控制，形成所述周期性导电区域。
  3. 一种增益耦合分布反馈半导体激光器，其特征在于，采用权利要求1或2所述的制作方法制作形成，所述增益耦合分布反馈激光器包括：
    衬底，所述衬底包括相对设置的第一表面和第二表面；
    位于所述衬底第一表面上沿背离所述衬底表面的方向依次设置的N面波导层、有源层、P面波导层，其中，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；所述凸起结构具有通过载流子控制形成的周期性导电区域；
    位于所述凸起结构上的P面电极；
    位于所述衬底第二表面的N面电极。
  4. 根据权利要求3所述的增益耦合分布反馈半导体激光器，其特征在于，所述周期性导电区域包括多个周期单元，每个所述周期单元包括一个 导电区域。
  5. 根据权利要求3所述的增益耦合分布反馈半导体激光器，其特征在于，所述周期性导电区域包括多个周期单元，每个所述周期单元包括多个导电区域。
  6. 根据权利要求3所述的增益耦合分布反馈半导体激光器，其特征在于，所述凸起结构上还具有凹槽，所述凹槽的延伸方向与所述光波导的延伸方向相同，且所述凹槽将所述光波导分为第一周期性导电区域和第二周期性导电区域；
    其中，所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。
  7. 一种增益耦合分布反馈半导体激光器制作方法，其特征在于，包括：
    提供衬底；
    在所述衬底上依次形成N面波导层、有源层、P面波导层和高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级；
    去除部分高掺杂盖层和P面波导层，形成凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导，且位于所述凸起结构表面的高掺杂盖层形成沿所述凸起结构延伸方向的周期性结构；
    在所述高掺杂盖层之外的区域形成绝缘介质层；
    制备P面电极和N面电极。
  8. 一种增益耦合分布反馈半导体激光器，其特征在于，采用权利要求7所述的制作方法形成，所述增益耦合分布反馈激光器包括：
    衬底，所述衬底包括相对设置的第一表面和第二表面；
    位于所述衬底第一表面上沿背离所述衬底表面的方向依次设置的N面波导层、有源层、P面波导层，其中，所述P面波导层具有凸起结构，具有凸起结构的所述P面波导层与所述有源层和所述N面波导层构成光波导；
    位于所述凸起结构上的高掺杂盖层，所述高掺杂盖层的掺杂浓度在1*10 18cm -3～1*10 19cm -3数量级，所述高掺杂盖层形成周期性导电区域；
    覆盖所述高掺杂盖层之外区域的绝缘介质层；
    位于所述高掺杂盖层上的P面电极；
    位于所述衬底第二表面的N面电极。
  9. 根据权利要求8所述的增益耦合分布反馈半导体激光器，其特征在于，所述P面电极包括第一P面电极和第二P面电极，所述第一P面电极和所述第二P面电极的延伸方向与所述光波导的延伸方向相同；
    其中，所述第一P面电极覆盖的高掺杂盖层形成第一周期性导电结构，所述第二P面电极覆盖的高掺杂盖层形成第二周期性导电结构；
    所述第一周期性导电区域和所述第二周期性导电区域的周期不相同。
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