WO2019041311A1 - Composite substrate, preparation method therefor and semiconductor device comprising same - Google Patents

Composite substrate, preparation method therefor and semiconductor device comprising same Download PDF

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Publication number
WO2019041311A1
WO2019041311A1 PCT/CN2017/100213 CN2017100213W WO2019041311A1 WO 2019041311 A1 WO2019041311 A1 WO 2019041311A1 CN 2017100213 W CN2017100213 W CN 2017100213W WO 2019041311 A1 WO2019041311 A1 WO 2019041311A1
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substrate
adjustment
conditioning
substrates
base substrate
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PCT/CN2017/100213
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French (fr)
Chinese (zh)
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何宗江
贾志强
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深圳前海小有技术有限公司
深圳佑荟半导体有限公司
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Priority to PCT/CN2017/100213 priority Critical patent/WO2019041311A1/en
Publication of WO2019041311A1 publication Critical patent/WO2019041311A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • the present invention relates to the field of semiconductor technology, and more particularly to a composite substrate and a method of fabricating the same, and a semiconductor device including the same.
  • a substrate supporting the growth of a semiconductor material is required.
  • the nature of the substrate is critical to the quality of the epitaxially grown semiconductor layer.
  • the difference in lattice mismatch and thermal expansion coefficient between the substrate and the epitaxially grown semiconductor material causes stress to cause formation of dislocations and the like in the semiconductor material, deteriorating the performance of the semiconductor device. Therefore, it is preferable to use homoepitaxial growth, that is, the substrate and the epitaxial growth layer use the same material.
  • the substrate and the epitaxial growth layer use the same material.
  • some widely used compound semiconductor materials are difficult to prepare their homogeneous substrates. In this case, a heterogeneous substrate has to be used.
  • the currently widely used substrate materials are mainly sapphire, silicon and silicon carbide. These materials have advantages and disadvantages as substrates.
  • sapphire As an example, the production technology of sapphire substrate is mature, the device quality is good, the stability of sapphire is also very good, and it can be used in high temperature growth process, and the mechanical strength of sapphire is high. Easy to handle and clean.
  • the sapphire material has a thermal expansion coefficient of 8.5*10 -6 /K, which has a large difference in thermal expansion coefficient with various semiconductor epitaxial materials such as gallium nitride (coefficient of thermal expansion: 5.8*10 -6 /K). This will directly affect the growth of the epitaxial material on it.
  • the difference in thermal expansion coefficient between the epitaxial material and the substrate material may not only reduce the film quality of the epitaxial material, but also cause damage to the device due to heat generation during the operation of the device, and it is also difficult to completely eliminate the relationship between the epitaxial material and the epitaxial material.
  • the adverse effects of lattice mismatch may not only reduce the film quality of the epitaxial material, but also cause damage to the device due to heat generation during the operation of the device, and it is also difficult to completely eliminate the relationship between the epitaxial material and the epitaxial material. The adverse effects of lattice mismatch.
  • the present invention provides a composite substrate and a method for preparing the same, which have large differences in thermal expansion coefficients between materials and lattice mismatch problems.
  • One aspect of the present invention provides a composite substrate, which may include: a base substrate and a nitride layer on the base substrate, wherein at least two different thermal expansion coefficients are embedded in the base substrate
  • the conditioning substrate is spaced apart from the underlying substrate material by adjacent conditioning substrates.
  • the conditioning substrate has a rectangular, teardrop-shaped, trapezoidal shape in a section of the thickness direction of the base substrate.
  • the base substrate comprises two kinds of adjustment substrates having different thermal expansion coefficients
  • the material of the first adjustment substrate comprises graphite, graphene or silicon dioxide
  • the second adjustment substrate Materials include silicon carbide or aluminum nitride.
  • the interval between adjacent adjustment substrates may be from 1 to 100 nm.
  • the upper surface of the conditioning substrate is lower than the upper surface of the base substrate, and a nitride layer is deposited on the conditioning substrate.
  • the nitride layer may be a two-layer nitride layer, and the material of the nitride layer is aluminum nitride, gallium nitride or aluminum gallium nitride.
  • Another aspect of the invention provides a method of fabricating a composite substrate, the method comprising:
  • the composite substrate is annealed at a temperature of 1000 to 1200 ° C under a nitrogen atmosphere.
  • the at least two conditioning substrates have different coefficients of thermal expansion, and adjacent conditioning substrates are spaced apart by the base substrate material.
  • n kinds of conditioning substrates are formed in the base substrate, and the "forming n kinds of conditioning substrates in the base substrate" is performed as follows:
  • n is an integer of 2 or more.
  • the thickness of the first adjustment substrate to the nth adjustment substrate is smaller than the depth of the first adjustment substrate groove to the nth adjustment substrate groove, such that A space is formed above the first adjustment substrate to the nth adjustment substrate.
  • the method further comprises: depositing a base substrate material in the space before the step of "depositing a nitride material to form a nitride layer on the base substrate".
  • the interval between adjacent adjustment substrates may be from 1 to 100 nm.
  • Yet another aspect of the present invention provides a semiconductor device including the composite substrate of the present application.
  • the present application provides a composite substrate and a method of fabricating the same, by introducing a conditioning substrate having different thermal expansion coefficients in a base substrate while forming a nitride template layer on the base substrate, thereby preparing a composite substrate,
  • the defect that the difference between the thermal expansion coefficients of the base substrate and the epitaxial semiconductor material is large is improved, and the setting of the template layer can improve the crystal quality of the epitaxial semiconductor material growth, and the quality of the semiconductor device formed by using the composite substrate of the present application is greatly improved. performance.
  • FIG. 1 is a schematic view of a composite substrate according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic view of a composite substrate according to Embodiment 2 of the present invention.
  • FIG. 3 is a schematic view of a composite substrate according to Embodiment 3 of the present invention.
  • One aspect of the present invention provides a composite substrate, which may include: a base substrate and a nitride layer on the base substrate, wherein at least two different thermal expansion coefficients are embedded in the base substrate
  • the conditioning substrate is spaced apart from the underlying substrate material by adjacent conditioning substrates.
  • the base substrate may use a conventional substrate material such as sapphire, silicon, silicon carbide or aluminum nitride.
  • the composite substrate of the present invention is introduced by introducing adjustments having different thermal expansion coefficients in the base substrate
  • the substrate can adjust the thermal expansion coefficient of the base substrate to reduce the difference in thermal expansion coefficient between the base substrate and the epitaxial material, and the composite substrate of the present application can embed the adjustment substrate into the base substrate by a convenient processing method to achieve
  • the adjustment of the thermal expansion coefficient of the base substrate can also maintain the thermal expansion coefficient while maintaining the excellent properties of the base substrate such as stability and high mechanical strength, and introducing a nitride layer as a template layer on the base substrate can further enhance the epitaxial semiconductor The quality of the crystal grown by the material.
  • the conditioning substrate has a rectangular, teardrop-shaped, trapezoidal shape in a section of the thickness direction of the base substrate.
  • the conditioning substrate of the present invention is embedded in the base substrate in different shapes, and may have different patterned shapes in the thickness direction of the base substrate, preferably having a shape of a rectangle, a teardrop, a trapezoid or the like, more preferably Has a teardrop shape.
  • the upper surface of the conditioning substrate may be located at the interface of the base substrate and the nitride layer, or may also be lower than the interface between the base substrate and the nitride layer, completely within the base substrate.
  • the base substrate may be first deposited to adjust the upper space of the substrate until the interface between the base substrate and the nitride layer is reached, and the nitride layer is deposited, or directly All nitride layers are deposited.
  • the base substrate comprises two adjustment substrates having different thermal expansion coefficients
  • the material of the first adjustment substrate comprises graphite, graphene or silicon dioxide
  • the second adjustment substrate Materials include silicon carbide or aluminum nitride.
  • the interval between adjacent adjustment substrates may be from 1 to 100 nm.
  • the adjustment substrate in the base substrate is dispersed and arranged at the nanometer scale, so that the thermal expansion coefficient of the base substrate can be more uniformly adjusted, so that the inclusion
  • the composite substrate device is more stable.
  • the size of the adjustment substrate itself is also on the nanometer scale, for example, 1 to 100 nm.
  • the upper surface of the conditioning substrate may be made lower than the upper surface of the base substrate, and a nitride layer is deposited on the conditioning substrate.
  • the adjustment substrate By making the upper surface of the adjustment substrate lower than the base substrate Interface with the nitride layer, and directly depositing a nitride layer, so that a part of the nitride is deposited in the base substrate, and the nitride layer and the foundation can be improved by adjusting the substrate to be dispersed and arranged in the base substrate on a nanometer scale. Lattice mismatch problem between substrates.
  • the material of the nitride layer may be aluminum nitride, gallium nitride or aluminum gallium nitride.
  • the choice of aluminum nitride, gallium nitride or aluminum gallium nitride to form a nitride layer can improve the lattice mismatch of the base substrate and the epitaxial material.
  • the nitride layer may be a two-layer nitride layer.
  • the nitride layer may include an aluminum nitride layer and a gallium nitride layer. More preferably, the aluminum nitride layer is on the base substrate, and the gallium nitride layer is on the aluminum nitride layer to further enhance the epitaxial material growth. The crystal quality improves the performance of semiconductor devices.
  • Another aspect of the invention provides a method of fabricating a composite substrate, the method comprising:
  • the composite substrate is annealed at a temperature of from 1000 ° C to 1200 ° C under a nitrogen atmosphere.
  • the at least two conditioning substrates have different coefficients of thermal expansion, and adjacent conditioning substrates are spaced apart by the base substrate material.
  • the composite substrate of the present invention having excellent properties can be conveniently obtained by the method for producing a composite substrate of the present invention.
  • n kinds of conditioning substrates are formed in the base substrate, and the "forming n kinds of conditioning substrates in the base substrate" is performed as follows:
  • n is an integer of 2 or more.
  • the composite substrate of the present invention contains two different conditioning substrates in the base substrate.
  • the material of the first conditioning substrate comprises graphite, graphene or silicon dioxide
  • the material of the second conditioning substrate comprises silicon carbide or aluminum nitride.
  • the etching and deposition in the present application can be carried out by conventional etching and deposition techniques, without particular limitation, and in use, suitable etching and deposition techniques can be selected depending on the material to be etched or deposited.
  • the thickness of the first adjustment substrate to the nth adjustment substrate is smaller than the depth of the first adjustment substrate groove to the nth adjustment substrate groove, such that A space is formed above the first adjustment substrate to the nth adjustment substrate.
  • the conditioning substrate it is possible to control the upper surface of the conditioning substrate to be lower than the interface between the base substrate and the nitride layer, thereby forming an empty space between the two interfaces.
  • a base substrate material may be deposited in the empty space.
  • a nitride layer directly, in which a nitride is deposited in the empty space.
  • the spacing between adjacent conditioning substrates is from 1 to 100 nm.
  • a nano-scale dispersed and arranged adjustment substrate can be formed in the base substrate, so that the thermal expansion coefficient of the base substrate is more uniform, and adjustment can be performed more efficiently.
  • the size of the conditioning substrate itself is also on the nanometer scale, for example, 1 to 100 nm.
  • Yet another aspect of the present invention provides a semiconductor device including the composite substrate of the present application.
  • the composite substrate of the present invention can be applied to various types of semiconductor devices, improving its device performance, lifetime, and the like, and can be applied, for example, to light emitting diodes or mos field effect transistors.
  • the composite substrate of the present invention is particularly suitable for light emitting diodes that emit light in front.
  • Embodiment 1 provides a composite substrate comprising a sapphire layer 101 and an aluminum nitride layer 102 on a sapphire layer, and two conditioning substrates 103 and 104 in the sapphire layer, as shown in FIG.
  • the first conditioning substrate 104 is graphite (the coefficient of thermal expansion is a negative number)
  • the second conditioning substrate 103 is silicon carbide (thermal expansion coefficient 4.2*10 -6 /K).
  • the two adjustment substrates are square in the cross section shown in FIG. 1, and their upper surfaces are located at the interface between the sapphire layer and the aluminum nitride layer, and the depth at which the adjustment substrate is located at the deepest point in the sapphire layer is the adjustment substrate.
  • the thickness is 3/5 of the thickness of the sapphire layer.
  • the width of the first adjustment substrate does not coincide with the width of the second adjustment substrate, and the number of the first adjustment substrates is twice the number of the second adjustment substrates.
  • Embodiment 2 provides a composite substrate comprising a sapphire layer 201 and a nitride layer 202 on the sapphire layer, and two adjustment substrates 203 and 204 in the sapphire layer, as shown in FIG.
  • the first conditioning substrate 204 is silicon dioxide (coefficient of thermal expansion 0.5*10 -6 /K)
  • the second conditioning substrate 203 is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K).
  • the two conditioning substrates are in the shape of a drop in the cross section to form a patterned substrate, thereby facilitating the growth of the nitride layer 202.
  • the upper surfaces of the two adjustment substrates are located at the interface of the sapphire layer and the nitride layer, and the depth at which the adjustment substrate is located at the deepest point in the sapphire layer is the thickness of the adjustment substrate, which is 3/5 of the thickness of the sapphire layer.
  • the number of first adjustment substrates is twice the number of second adjustment substrates.
  • the nitride layer 202 is a composite layer of GaN and AlN, wherein the lower layer is AlN and the upper layer is GaN.
  • Embodiment 3 provides a composite substrate comprising a sapphire layer 301 and a nitride layer 302 on the sapphire layer, and two adjustment substrates 303 and 304 in the sapphire layer, as shown in FIG.
  • the first adjustment substrate 304 is graphene (the coefficient of thermal expansion is negative)
  • the second adjustment substrate 303 is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K).
  • the two adjustment substrates are square in the cross section, and their upper surface is lower than the interface between the sapphire layer and the nitride layer, and the depth of the adjustment substrate located at the deepest point in the sapphire layer is greater than the thickness of the adjustment substrate, respectively
  • the thickness of the sapphire layer is 2/3 and 1/2.
  • the number of first adjustment substrates is twice the number of second adjustment substrates.
  • a sapphire material is deposited in a space between the upper surface of the conditioning substrate and the interface of the sapphire layer and the nitride layer, and after the interface between the sapphire layer and the nitride layer, a nitride layer 302 is deposited thereon.
  • the nitride layer 302 is a composite layer of GaN and AlN, wherein the lower layer is AlN and the upper layer is GaN.
  • the thermal expansion coefficient of the composite substrate of the present embodiment was measured, which was close to 5.8*10 -6 /K, which greatly reduced the thermal expansion coefficient of the sapphire substrate and achieved excellent adjustment effects.
  • Embodiment 4 provides a composite substrate comprising a sapphire layer and an aluminum nitride layer on the sapphire layer, the sapphire layer comprising two conditioning substrates, wherein the first conditioning substrate is graphite ( The coefficient of thermal expansion is a negative number), and the second conditioning substrate is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K).
  • the two adjustment substrates are dispersed and spaced in the nanometer scale in the sapphire layer, the width of the substrate is adjusted, and the spacing between adjacent adjustment substrates is 50 nm, and the upper surface of the deposited adjustment substrate is lower than the sapphire layer and nitrogen.
  • the number of first adjustment substrates is twice the number of second adjustment substrates.
  • first adjustment substrate recess After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the depth of the first adjustment substrate recess being 3/5 of the thickness of the sapphire layer;
  • the second adjustment substrate recess After depositing the mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 3/5 of the thickness of the sapphire layer;
  • first adjustment substrate recess After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the depth of the first adjustment substrate recess being 3/5 of the thickness of the sapphire layer;
  • the thickness of the first adjustment substrate being equal to the depth of the first adjustment substrate recess, and at the same time, the first adjustment substrate is on the basis a cut surface having a teardrop shape in a thickness direction of the substrate;
  • the second adjustment substrate recess After depositing the mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 3/5 of the thickness of the sapphire layer;
  • the cut surface in the thickness direction of the substrate also has a shape of a teardrop shape
  • a method for preparing a composite substrate in embodiment 3, comprising the steps of:
  • first adjustment substrate recess After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the first adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer;
  • the sapphire layer After depositing a mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer;
  • the thickness of the second adjustment substrate is 1/2 of the thickness of the sapphire layer
  • a method for preparing a composite substrate according to Embodiment 4 comprising the steps of:
  • the sapphire layer is etched by using a nano-etching technique to form a first adjustment substrate recess, the first adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer and a width of 50 nm;
  • the second adjustment substrate recess has a depth of 2/3 of the thickness of the sapphire layer and a width of 50 nm;
  • a light emitting diode comprising the composite substrate of Embodiment 1 of the present application and an epitaxial wafer on the substrate, and an electrode or the like.
  • a mos field effect transistor comprising the composite substrate of Embodiment 1 of the present application and other functional layers on the substrate.

Abstract

A composite substrate and a preparation method therefor. The composite substrate comprises base substrates (101, 201, 301) and nitride layers (102, 202, 302) located on the base substrates (101, 201, 301); each base substrate (101, 201, 301) is embedded with at least two adjustment substrates (103, 104, 203, 204, 303, 304) having different thermal expansion coefficients; and the adjacent adjustment substrates (103, 104, 203, 204, 303, 304) are spaced apart by base substrate (101, 201, 301) materials. By introducing in the base substrates (101, 201, 301) the adjustment substrates (103, 104, 203, 204, 303, 304) having the different thermal expansion coefficients, and forming the nitride template layers on the base substrates (101, 201, 301), the composite substrate is prepared, thus curing the defect of large difference in thermal expansion coefficients of the base substrates (101, 201, 301) and an epitaxial semiconductor material; and by setting the template layer, the growth quality of the epitaxial semiconductor material is improved. Further provided is a semiconductor device comprising the composite substrate which greatly improves the quality and performance of the formed semiconductor device.

Description

复合衬底及其制备方法以及包括该复合衬底的半导体器件Composite substrate and preparation method thereof, and semiconductor device including the same 技术领域Technical field
本发明涉及半导体技术领域，更具体而言涉及一种复合衬底及其制备方法，以及包括该复合衬底的半导体器件。The present invention relates to the field of semiconductor technology, and more particularly to a composite substrate and a method of fabricating the same, and a semiconductor device including the same.
背景技术Background technique
在半导体结构和器件的外延生长中，需要支撑半导体材料生长的衬底。而且，衬底的性质对外延生长的半导体层的质量非常关键。衬底与外延生长的半导体材料之间的晶格失配和热膨胀系数差异，会引起应力导致半导体材料中形成位错等，使得半导体器件的性能恶化。因此，最好使用同质外延，即，衬底和外延生长层使用相同材料。可惜的是，由于价格或者工艺等问题，一些广泛使用的化合物半导体材料难以制备他们的同质衬底。在这种情况下，只好使用异质衬底。In the epitaxial growth of semiconductor structures and devices, a substrate supporting the growth of a semiconductor material is required. Moreover, the nature of the substrate is critical to the quality of the epitaxially grown semiconductor layer. The difference in lattice mismatch and thermal expansion coefficient between the substrate and the epitaxially grown semiconductor material causes stress to cause formation of dislocations and the like in the semiconductor material, deteriorating the performance of the semiconductor device. Therefore, it is preferable to use homoepitaxial growth, that is, the substrate and the epitaxial growth layer use the same material. Unfortunately, due to price or process issues, some widely used compound semiconductor materials are difficult to prepare their homogeneous substrates. In this case, a heterogeneous substrate has to be used.
目前广泛使用的衬底材料主要有蓝宝石、硅和碳化硅。这些材料作为衬底各有优缺点，以蓝宝石为例，蓝宝石衬底的生产技术成熟、器件质量较好，蓝宝石的稳定性也很好，能够运用在高温生长过程中，同时蓝宝石的机械强度高，易于处理和清洗。但是，蓝宝石材料的热膨胀系数为8.5＊10-6/K，与常用的各种半导体外延材料，例如氮化镓(热膨胀系数为5.8＊10-6/K)等有较大的热膨胀系数差异，这会直接影响其上外延材料的生长。The currently widely used substrate materials are mainly sapphire, silicon and silicon carbide. These materials have advantages and disadvantages as substrates. Taking sapphire as an example, the production technology of sapphire substrate is mature, the device quality is good, the stability of sapphire is also very good, and it can be used in high temperature growth process, and the mechanical strength of sapphire is high. Easy to handle and clean. However, the sapphire material has a thermal expansion coefficient of 8.5*10 -6 /K, which has a large difference in thermal expansion coefficient with various semiconductor epitaxial materials such as gallium nitride (coefficient of thermal expansion: 5.8*10 -6 /K). This will directly affect the growth of the epitaxial material on it.
外延材料与衬底材料在热膨胀系数上相差过大不仅可能使外延材料的膜质量下降，还会在器件工作过程中，由于发热而造成器件的损坏，而且也很难完全消除与外延材料之间的晶格失配的不利影响。The difference in thermal expansion coefficient between the epitaxial material and the substrate material may not only reduce the film quality of the epitaxial material, but also cause damage to the device due to heat generation during the operation of the device, and it is also difficult to completely eliminate the relationship between the epitaxial material and the epitaxial material. The adverse effects of lattice mismatch.
因此，希望开发一种可以改善衬底材料与外延材料热膨胀系数不匹配的缺陷的复合衬底。Therefore, it is desirable to develop a composite substrate that can improve the defects of the thermal expansion coefficient of the substrate material and the epitaxial material.
发明内容Summary of the invention
针对现有的半导体器件的衬底材料在应用时的诸多问题，尤其是与外延 材料之间热膨胀系数差异较大和晶格失配问题，本发明提供了一种复合衬底及其制备方法。Many problems in the application of substrate materials for existing semiconductor devices, especially with epitaxy The present invention provides a composite substrate and a method for preparing the same, which have large differences in thermal expansion coefficients between materials and lattice mismatch problems.
本发明的一个方面提供一种复合衬底，该复合衬底可以包括：基础衬底和位于所述基础衬底上的氮化物层，所述基础衬底中嵌入有至少两种具有不同热膨胀系数的调节衬底，相邻调节衬底之间由基础衬底材料间隔开。One aspect of the present invention provides a composite substrate, which may include: a base substrate and a nitride layer on the base substrate, wherein at least two different thermal expansion coefficients are embedded in the base substrate The conditioning substrate is spaced apart from the underlying substrate material by adjacent conditioning substrates.
根据本发明的一个优选实施方案，所述调节衬底在基础衬底的厚度方向的切面中具有长方形、水滴形、梯形的形状。According to a preferred embodiment of the present invention, the conditioning substrate has a rectangular, teardrop-shaped, trapezoidal shape in a section of the thickness direction of the base substrate.
根据本发明的另一个优选实施方案，所述基础衬底中包含两种具有不同热膨胀系数的调节衬底，第一调节衬底的材料包括石墨、石墨烯或者二氧化硅，第二调节衬底的材料包括碳化硅或者氮化铝。According to another preferred embodiment of the present invention, the base substrate comprises two kinds of adjustment substrates having different thermal expansion coefficients, and the material of the first adjustment substrate comprises graphite, graphene or silicon dioxide, and the second adjustment substrate Materials include silicon carbide or aluminum nitride.
根据本发明的另一个优选实施方案，相邻调节衬底之间的间隔可以为1至100nm。According to another preferred embodiment of the present invention, the interval between adjacent adjustment substrates may be from 1 to 100 nm.
根据本发明的另一个优选实施方案，所述调节衬底的上表面低于基础衬底的上表面，且在所述调节衬底上沉积氮化物层。According to another preferred embodiment of the present invention, the upper surface of the conditioning substrate is lower than the upper surface of the base substrate, and a nitride layer is deposited on the conditioning substrate.
根据本发明的另一个优选实施方案，所述氮化物层可以为双层氮化物层，所述氮化物层的材料为氮化铝、氮化镓或者氮化铝镓。According to another preferred embodiment of the present invention, the nitride layer may be a two-layer nitride layer, and the material of the nitride layer is aluminum nitride, gallium nitride or aluminum gallium nitride.
本发明的另一个方面提供一种复合衬底的制备方法，所述方法可以包括：Another aspect of the invention provides a method of fabricating a composite substrate, the method comprising:
在基础衬底中形成至少两种调节衬底；Forming at least two conditioning substrates in the base substrate;
在基础衬底上沉积氮化物材料形成氮化物层；Depositing a nitride material on the base substrate to form a nitride layer;
将复合衬底在氮气氛围下从1000至1200℃的温度下退火，The composite substrate is annealed at a temperature of 1000 to 1200 ° C under a nitrogen atmosphere.
其中，所述至少两种调节衬底具有不同的热膨胀系数，且相邻调节衬底之间由基础衬底材料间隔开。Wherein the at least two conditioning substrates have different coefficients of thermal expansion, and adjacent conditioning substrates are spaced apart by the base substrate material.
根据本发明的一个优选实施方案，在所述基础衬底中形成n种调节衬底，且所述“在所述基础衬底中形成n种调节衬底”如下进行：According to a preferred embodiment of the present invention, n kinds of conditioning substrates are formed in the base substrate, and the "forming n kinds of conditioning substrates in the base substrate" is performed as follows:
在基础衬底上沉积掩膜材料后，对基础衬底进行蚀刻形成第一调节衬底凹槽；After depositing a mask material on the base substrate, etching the base substrate to form a first adjustment substrate recess;
在第一调节衬底凹槽中沉积第一调节衬底材料形成第一调节衬底；Depositing a first conditioning substrate material in the first conditioning substrate recess to form a first conditioning substrate;
除去掩膜材料并进行洗涤；Removing the mask material and washing;
重复前述三个步骤，直至形成第n种调节衬底；Repeat the foregoing three steps until the nth adjustment substrate is formed;
其中，n为2以上的整数。 Wherein n is an integer of 2 or more.
根据本发明的一个优选实施方案，所述第一调节衬底至所述第n调节衬底的厚度小于所述第一调节衬底凹槽至所述第n调节衬底凹槽的深度，使得在所述第一调节衬底至所述第n调节衬底的上方形成空间。According to a preferred embodiment of the present invention, the thickness of the first adjustment substrate to the nth adjustment substrate is smaller than the depth of the first adjustment substrate groove to the nth adjustment substrate groove, such that A space is formed above the first adjustment substrate to the nth adjustment substrate.
进一步地，所述方法，在“在基础衬底上沉积氮化物材料形成氮化物层”步骤前，进一步包括：在所述空间中沉积基础衬底材料。Further, the method further comprises: depositing a base substrate material in the space before the step of "depositing a nitride material to form a nitride layer on the base substrate".
根据本发明的另一个优选实施方案，相邻调节衬底之间的间隔可以为1至100nm。According to another preferred embodiment of the present invention, the interval between adjacent adjustment substrates may be from 1 to 100 nm.
本发明的又一个方面提供一种半导体器件，其包括本申请的复合衬底。Yet another aspect of the present invention provides a semiconductor device including the composite substrate of the present application.
有益效果Beneficial effect
本申请提供了一种复合衬底及其制备方法，通过在基础衬底中引入具有不同热膨胀系数的调节衬底，同时在基础衬底上形成氮化物模板层，由此制备的复合衬底，改善了基础衬底与外延半导体材料热膨胀系数差较大的缺陷，同时模板层的设置可以提高外延半导体材料生长的晶体质量，极大地提高了使用本申请的复合衬底形成的半导体器件的质量和性能。The present application provides a composite substrate and a method of fabricating the same, by introducing a conditioning substrate having different thermal expansion coefficients in a base substrate while forming a nitride template layer on the base substrate, thereby preparing a composite substrate, The defect that the difference between the thermal expansion coefficients of the base substrate and the epitaxial semiconductor material is large is improved, and the setting of the template layer can improve the crystal quality of the epitaxial semiconductor material growth, and the quality of the semiconductor device formed by using the composite substrate of the present application is greatly improved. performance.
附图说明DRAWINGS
从下面结合附图的详细描述中，将会更加清楚的理解本发明的上述及其他目的、特征和其他优点，其中，The above and other objects, features and other advantages of the present invention will become more <RTIgt;
图1为本发明实施例1的复合衬底的示意图；1 is a schematic view of a composite substrate according to Embodiment 1 of the present invention;
图2为本发明实施例2的复合衬底的示意图；2 is a schematic view of a composite substrate according to Embodiment 2 of the present invention;
图3为本发明实施例3的复合衬底的示意图。3 is a schematic view of a composite substrate according to Embodiment 3 of the present invention.
具体实施方式Detailed ways
本发明的一个方面提供一种复合衬底，该复合衬底可以包括：基础衬底和位于所述基础衬底上的氮化物层，所述基础衬底中嵌入有至少两种具有不同热膨胀系数的调节衬底，相邻调节衬底之间由基础衬底材料间隔开。One aspect of the present invention provides a composite substrate, which may include: a base substrate and a nitride layer on the base substrate, wherein at least two different thermal expansion coefficients are embedded in the base substrate The conditioning substrate is spaced apart from the underlying substrate material by adjacent conditioning substrates.
本发明中，所述基础衬底可以使用常用的衬底材料，例如蓝宝石、硅、碳化硅或者氮化铝等。In the present invention, the base substrate may use a conventional substrate material such as sapphire, silicon, silicon carbide or aluminum nitride.
本发明的复合衬底，通过在基础衬底中引入具有不同热膨胀系数的调节 衬底，可以调节基础衬底的热膨胀系数，减小基础衬底与外延材料的热膨胀系数差，同时本申请的复合衬底可以通过方便的加工方法将调节衬底嵌入基础衬底中，实现对基础衬底热膨胀系数的调节，还可以在调节热膨胀系数的同时维持基础衬底的优异性能例如稳定性和高机械强度，而在基础衬底上引入氮化物层作为模板层，可以进一步提高外延半导体材料生长的晶体质量。The composite substrate of the present invention is introduced by introducing adjustments having different thermal expansion coefficients in the base substrate The substrate can adjust the thermal expansion coefficient of the base substrate to reduce the difference in thermal expansion coefficient between the base substrate and the epitaxial material, and the composite substrate of the present application can embed the adjustment substrate into the base substrate by a convenient processing method to achieve The adjustment of the thermal expansion coefficient of the base substrate can also maintain the thermal expansion coefficient while maintaining the excellent properties of the base substrate such as stability and high mechanical strength, and introducing a nitride layer as a template layer on the base substrate can further enhance the epitaxial semiconductor The quality of the crystal grown by the material.
根据本发明的另一个优选实施方案，所述调节衬底在基础衬底的厚度方向的切面中具有长方形、水滴形、梯形的形状。本发明的调节衬底以不同的形状嵌入基础衬底中，在基础衬底的厚度方向的切面中，可以具有不同的图案化的形状，优选具有长方形、水滴形、梯形等等形状，更优选具有水滴形的形状。通过使调节衬底以图案化的形状嵌入基础衬底中，可以更好地起到调节基础衬底的热膨胀系数的作用。另外，调节衬底的上表面可以位于基础衬底与氮化物层的界面，或者也可以低于基础衬底与氮化物层的界面，完全位于基础衬底中。当调节衬底的上表面位于基础衬底中时，可以先沉积基础衬底至调节衬底的上部空间，直至达到基础衬底与氮化物层的界面，再沉积氮化物层，或者也可以直接全部沉积氮化物层。According to another preferred embodiment of the present invention, the conditioning substrate has a rectangular, teardrop-shaped, trapezoidal shape in a section of the thickness direction of the base substrate. The conditioning substrate of the present invention is embedded in the base substrate in different shapes, and may have different patterned shapes in the thickness direction of the base substrate, preferably having a shape of a rectangle, a teardrop, a trapezoid or the like, more preferably Has a teardrop shape. By embedding the conditioning substrate in the patterned substrate in a patterned shape, it is possible to better function to adjust the coefficient of thermal expansion of the base substrate. In addition, the upper surface of the conditioning substrate may be located at the interface of the base substrate and the nitride layer, or may also be lower than the interface between the base substrate and the nitride layer, completely within the base substrate. When the upper surface of the adjustment substrate is located in the base substrate, the base substrate may be first deposited to adjust the upper space of the substrate until the interface between the base substrate and the nitride layer is reached, and the nitride layer is deposited, or directly All nitride layers are deposited.
根据本发明的一个优选实施方案，所述基础衬底中包含两种具有不同热膨胀系数的调节衬底，第一调节衬底的材料包括石墨、石墨烯或者二氧化硅，第二调节衬底的材料包括碳化硅或者氮化铝。在基础衬底中引入两种具有不同热膨胀系数的调节衬底，分别为热膨胀系数较小的石墨、石墨烯或者二氧化硅，以及热膨胀系数相对高的碳化硅或者氮化铝，可以更有效地调节基础衬底的热膨胀系数至希望的范围。调节衬底的具体数量、宽度、厚度等等可以根据需要进行调节。所述第一调节衬底和所述第二调节衬底的宽度和厚度均可以设定为相同或者不同。According to a preferred embodiment of the present invention, the base substrate comprises two adjustment substrates having different thermal expansion coefficients, the material of the first adjustment substrate comprises graphite, graphene or silicon dioxide, and the second adjustment substrate Materials include silicon carbide or aluminum nitride. Introducing two kinds of adjustment substrates with different thermal expansion coefficients in the base substrate, respectively, graphite, graphene or silicon dioxide with small thermal expansion coefficient, and silicon carbide or aluminum nitride with relatively high thermal expansion coefficient, which can be more effective The coefficient of thermal expansion of the base substrate is adjusted to a desired range. The specific number, width, thickness, etc. of the substrate can be adjusted as needed. The width and thickness of the first adjustment substrate and the second adjustment substrate may be set to be the same or different.
根据本发明的另一个优选实施方案，相邻调节衬底之间的间隔可以为1至100nm。通过将相邻调节衬底之间的间隔设置在1至100nm范围内，使基础衬底中调节衬底在纳米尺度分散和布置，从而可以更均匀地调节基础衬底的热膨胀系数，使得包含此复合衬底的器件更稳定。在此情况下，可以设置调节衬底自身的尺寸也为纳米尺度，例如，1至100nm。更进一步地，在沉积调节衬底时，可以使得所述调节衬底的上表面低于基础衬底的上表面，且在所述调节衬底上沉积氮化物层。通过使得调节衬底的上表面低于基础衬底 与氮化物层的界面，并直接沉积氮化物层，使得部分氮化物沉积在基础衬底中，由于调节衬底以纳米级尺度分散和排布在基础衬底中，可以改善氮化物层与基础衬底之间的晶格失配问题。According to another preferred embodiment of the present invention, the interval between adjacent adjustment substrates may be from 1 to 100 nm. By arranging the interval between adjacent adjustment substrates in the range of 1 to 100 nm, the adjustment substrate in the base substrate is dispersed and arranged at the nanometer scale, so that the thermal expansion coefficient of the base substrate can be more uniformly adjusted, so that the inclusion The composite substrate device is more stable. In this case, it may be provided that the size of the adjustment substrate itself is also on the nanometer scale, for example, 1 to 100 nm. Further, when depositing the conditioning substrate, the upper surface of the conditioning substrate may be made lower than the upper surface of the base substrate, and a nitride layer is deposited on the conditioning substrate. By making the upper surface of the adjustment substrate lower than the base substrate Interface with the nitride layer, and directly depositing a nitride layer, so that a part of the nitride is deposited in the base substrate, and the nitride layer and the foundation can be improved by adjusting the substrate to be dispersed and arranged in the base substrate on a nanometer scale. Lattice mismatch problem between substrates.
根据本发明的另一个优选实施方案，所述氮化物层的材料可以为氮化铝、氮化镓或者氮化铝镓。选择氮化铝、氮化镓或者氮化铝镓来形成氮化物层，可以改善基础衬底与外延材料的晶格失配的缺陷。进一步地，所述氮化物层可以为双层氮化物层。例如，所述氮化物层可以包括氮化铝层和氮化镓层，更优选地，氮化铝层位于基础衬底上，氮化镓层位于氮化铝层上，可以进一步提高外延材料生长的晶体质量，改善半导体器件性能。According to another preferred embodiment of the present invention, the material of the nitride layer may be aluminum nitride, gallium nitride or aluminum gallium nitride. The choice of aluminum nitride, gallium nitride or aluminum gallium nitride to form a nitride layer can improve the lattice mismatch of the base substrate and the epitaxial material. Further, the nitride layer may be a two-layer nitride layer. For example, the nitride layer may include an aluminum nitride layer and a gallium nitride layer. More preferably, the aluminum nitride layer is on the base substrate, and the gallium nitride layer is on the aluminum nitride layer to further enhance the epitaxial material growth. The crystal quality improves the performance of semiconductor devices.
本发明的另一个方面提供一种复合衬底的制备方法，所述方法可以包括：Another aspect of the invention provides a method of fabricating a composite substrate, the method comprising:
在基础衬底中形成至少两种调节衬底；Forming at least two conditioning substrates in the base substrate;
在基础衬底上沉积氮化物材料形成氮化物层；Depositing a nitride material on the base substrate to form a nitride layer;
将复合衬底在氮气氛围下从1000℃至1200℃的温度下退火，The composite substrate is annealed at a temperature of from 1000 ° C to 1200 ° C under a nitrogen atmosphere.
其中，所述至少两种调节衬底具有不同的热膨胀系数，且相邻调节衬底之间由基础衬底材料间隔开。Wherein the at least two conditioning substrates have different coefficients of thermal expansion, and adjacent conditioning substrates are spaced apart by the base substrate material.
通过本发明的复合衬底的制备方法，可以方便地获得本发明的具有优异性能的复合衬底。The composite substrate of the present invention having excellent properties can be conveniently obtained by the method for producing a composite substrate of the present invention.
根据本发明的一个优选实施方案，在所述基础衬底中形成n种调节衬底，且所述“在所述基础衬底中形成n种调节衬底”如下进行：According to a preferred embodiment of the present invention, n kinds of conditioning substrates are formed in the base substrate, and the "forming n kinds of conditioning substrates in the base substrate" is performed as follows:
在基础衬底上沉积掩膜材料后，对基础衬底进行蚀刻形成第一调节衬底凹槽；After depositing a mask material on the base substrate, etching the base substrate to form a first adjustment substrate recess;
在第一调节衬底凹槽中沉积第一调节衬底材料形成第一调节衬底；Depositing a first conditioning substrate material in the first conditioning substrate recess to form a first conditioning substrate;
除去掩膜材料并进行洗涤；Removing the mask material and washing;
重复前述三个步骤，直至形成第n种调节衬底；Repeat the foregoing three steps until the nth adjustment substrate is formed;
其中，n为2以上的整数。Wherein n is an integer of 2 or more.
在本申请中，通过在基础衬底上沉积掩膜材料，然后根据掩膜的图案，对基础衬底进行蚀刻，可以形成调节衬底的凹槽，之后在凹槽中沉积调节衬底材料即可形成调节衬底，然后可以去除掩膜材料。通过重复这一过程，即可以在基础衬底中形成不同的调节衬底。通过掩膜的图案，即可以控制不同调节衬底的形状和分布，例如，可以控制调节衬底在基础衬底的厚度方向的 切面中具有长方形、水滴形、梯形的形状。优选地，本发明的复合衬底在基础衬底中含有两种不同的调节衬底。更优选地，第一调节衬底的材料包括石墨、石墨烯或者二氧化硅，第二调节衬底的材料包括碳化硅或者氮化铝。本申请中的蚀刻和沉积可以采用常规的蚀刻、沉积技术进行，没有特殊限制，使用时，可以根据刻蚀或者沉积的材料不同，选择合适的蚀刻和沉积技术。In the present application, by depositing a mask material on the base substrate and then etching the base substrate according to the pattern of the mask, a groove for adjusting the substrate can be formed, and then depositing the adjustment substrate material in the groove A conditioning substrate can be formed and the mask material can then be removed. By repeating this process, different conditioning substrates can be formed in the base substrate. The shape and distribution of the different adjustment substrates can be controlled by the pattern of the mask, for example, the adjustment substrate can be controlled in the thickness direction of the base substrate. The cut surface has a rectangular shape, a teardrop shape, and a trapezoidal shape. Preferably, the composite substrate of the present invention contains two different conditioning substrates in the base substrate. More preferably, the material of the first conditioning substrate comprises graphite, graphene or silicon dioxide, and the material of the second conditioning substrate comprises silicon carbide or aluminum nitride. The etching and deposition in the present application can be carried out by conventional etching and deposition techniques, without particular limitation, and in use, suitable etching and deposition techniques can be selected depending on the material to be etched or deposited.
根据本发明的一个优选实施方案，所述第一调节衬底至所述第n调节衬底的厚度小于所述第一调节衬底凹槽至所述第n调节衬底凹槽的深度，使得在所述第一调节衬底至所述第n调节衬底的上方形成空间。换言之，在沉积调节衬底时，可以控制使调节衬底的上表面低于基础衬底与氮化物层的界面，由此在这两个界面之间即形成一种空的空间。According to a preferred embodiment of the present invention, the thickness of the first adjustment substrate to the nth adjustment substrate is smaller than the depth of the first adjustment substrate groove to the nth adjustment substrate groove, such that A space is formed above the first adjustment substrate to the nth adjustment substrate. In other words, when depositing the conditioning substrate, it is possible to control the upper surface of the conditioning substrate to be lower than the interface between the base substrate and the nitride layer, thereby forming an empty space between the two interfaces.
进一步地，在该空的空间中可以沉积基础衬底材料。或者，也可以直接沉积氮化物层，则在该空的空间中会沉积氮化物。Further, a base substrate material may be deposited in the empty space. Alternatively, it is also possible to deposit a nitride layer directly, in which a nitride is deposited in the empty space.
根据本发明的另一个优选实施方案，相邻调节衬底之间的间隔为1至100nm。通过纳米刻蚀技术，可以使得在基础衬底中形成纳米尺度分散和排布的调节衬底，从而使得基础衬底的热膨胀系数更均匀，而且可以更有效地进行调节。优选地，调节衬底自身的尺寸也为纳米尺度，例如，1至100nm。According to another preferred embodiment of the invention, the spacing between adjacent conditioning substrates is from 1 to 100 nm. Through the nano-etching technique, a nano-scale dispersed and arranged adjustment substrate can be formed in the base substrate, so that the thermal expansion coefficient of the base substrate is more uniform, and adjustment can be performed more efficiently. Preferably, the size of the conditioning substrate itself is also on the nanometer scale, for example, 1 to 100 nm.
本发明的又一个方面提供一种半导体器件，其包括本申请的复合衬底。本发明的复合衬底可以应用于各种不同类型的半导体器件，改善其器件性能和寿命等，例如，可以应用于发光二极管或者mos场效应晶体管。本发明的复合衬底尤其适合于正面发光的发光二极管。Yet another aspect of the present invention provides a semiconductor device including the composite substrate of the present application. The composite substrate of the present invention can be applied to various types of semiconductor devices, improving its device performance, lifetime, and the like, and can be applied, for example, to light emitting diodes or mos field effect transistors. The composite substrate of the present invention is particularly suitable for light emitting diodes that emit light in front.
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。The present invention will be further described in detail below in conjunction with the drawings and specific embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
实施例1Example 1
实施例1提供了一种复合衬底，如图1所示，该复合衬底包含蓝宝石层101和位于蓝宝石层上的氮化铝层102，在蓝宝石层中包含两种调节衬底103和104，其中，第一调节衬底104为石墨(热膨胀系数为负数)，第二调节衬底103为碳化硅(热膨胀系数4.2＊10-6/K)。两种调节衬底在图1所示的横截 面中呈方形，他们的上表面位于蓝宝石层和氮化铝层的界面，此时调节衬底位于蓝宝石层中最深处的深度即为调节衬底的厚度，为蓝宝石层厚度的3/5。第一调节衬底的宽度和第二调节衬底的宽度不一致，第一调节衬底的数量为第二调节衬底的数量的2倍。Embodiment 1 provides a composite substrate comprising a sapphire layer 101 and an aluminum nitride layer 102 on a sapphire layer, and two conditioning substrates 103 and 104 in the sapphire layer, as shown in FIG. Wherein, the first conditioning substrate 104 is graphite (the coefficient of thermal expansion is a negative number), and the second conditioning substrate 103 is silicon carbide (thermal expansion coefficient 4.2*10 -6 /K). The two adjustment substrates are square in the cross section shown in FIG. 1, and their upper surfaces are located at the interface between the sapphire layer and the aluminum nitride layer, and the depth at which the adjustment substrate is located at the deepest point in the sapphire layer is the adjustment substrate. The thickness is 3/5 of the thickness of the sapphire layer. The width of the first adjustment substrate does not coincide with the width of the second adjustment substrate, and the number of the first adjustment substrates is twice the number of the second adjustment substrates.
实施例2Example 2
实施例2提供了一种复合衬底，如图2所示，该复合衬底包含蓝宝石层201和位于蓝宝石层上的氮化物层202，在蓝宝石层中包含两种调节衬底203和204，其中，第一调节衬底204为二氧化硅(热膨胀系数0.5＊10-6/K)，第二调节衬底203为氮化铝(热膨胀系数4.2＊10-6/K)。两种调节衬底在该横截面上呈水滴形，形成图形化衬底，从而更有利于氮化物层202的生长。两种调节衬底的上表面位于蓝宝石层和氮化物层的界面，此时调节衬底位于蓝宝石层中最深处的深度即为调节衬底的厚度，为蓝宝石层厚度的3/5。第一调节衬底的数量为第二调节衬底的数量的2倍。Embodiment 2 provides a composite substrate comprising a sapphire layer 201 and a nitride layer 202 on the sapphire layer, and two adjustment substrates 203 and 204 in the sapphire layer, as shown in FIG. The first conditioning substrate 204 is silicon dioxide (coefficient of thermal expansion 0.5*10 -6 /K), and the second conditioning substrate 203 is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K). The two conditioning substrates are in the shape of a drop in the cross section to form a patterned substrate, thereby facilitating the growth of the nitride layer 202. The upper surfaces of the two adjustment substrates are located at the interface of the sapphire layer and the nitride layer, and the depth at which the adjustment substrate is located at the deepest point in the sapphire layer is the thickness of the adjustment substrate, which is 3/5 of the thickness of the sapphire layer. The number of first adjustment substrates is twice the number of second adjustment substrates.
氮化物层202为GaN以及AlN的复合层，其中，下层为AlN上层为GaN。The nitride layer 202 is a composite layer of GaN and AlN, wherein the lower layer is AlN and the upper layer is GaN.
实施例3Example 3
实施例3提供了一种复合衬底，如图3所示，该复合衬底包含蓝宝石层301和位于蓝宝石层上的氮化物层302，在蓝宝石层中包含两种调节衬底303和304，其中，第一调节衬底304为石墨烯(热膨胀系数为负数)，第二调节衬底303为氮化铝(热膨胀系数4.2＊10-6/K)。两种调节衬底在该横截面上呈方形，他们的上表面低于蓝宝石层和氮化物层的界面，此时调节衬底位于蓝宝石层中最深处的深度大于调节衬底的厚度，分别为蓝宝石层厚度的2/3和1/2。第一调节衬底的数量为第二调节衬底的数量的2倍。在调节衬底的上表面与蓝宝石层和氮化物层的界面之间的空间沉积蓝宝石材料，至蓝宝石层和氮化物层的界面后，再在上面沉积氮化物层302。Embodiment 3 provides a composite substrate comprising a sapphire layer 301 and a nitride layer 302 on the sapphire layer, and two adjustment substrates 303 and 304 in the sapphire layer, as shown in FIG. The first adjustment substrate 304 is graphene (the coefficient of thermal expansion is negative), and the second adjustment substrate 303 is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K). The two adjustment substrates are square in the cross section, and their upper surface is lower than the interface between the sapphire layer and the nitride layer, and the depth of the adjustment substrate located at the deepest point in the sapphire layer is greater than the thickness of the adjustment substrate, respectively The thickness of the sapphire layer is 2/3 and 1/2. The number of first adjustment substrates is twice the number of second adjustment substrates. A sapphire material is deposited in a space between the upper surface of the conditioning substrate and the interface of the sapphire layer and the nitride layer, and after the interface between the sapphire layer and the nitride layer, a nitride layer 302 is deposited thereon.
氮化物层302为GaN以及AlN的复合层，其中，下层为AlN上层为GaN。The nitride layer 302 is a composite layer of GaN and AlN, wherein the lower layer is AlN and the upper layer is GaN.
对本实施例的复合衬底的热膨胀系数进行了测量，接近5.8＊10-6/K，大大降低了蓝宝石衬底的热膨胀系数，取得了优异的调节效果。 The thermal expansion coefficient of the composite substrate of the present embodiment was measured, which was close to 5.8*10 -6 /K, which greatly reduced the thermal expansion coefficient of the sapphire substrate and achieved excellent adjustment effects.
实施例4Example 4
实施例4提供了一种复合衬底，该复合衬底包含蓝宝石层和位于蓝宝石层上的氮化铝层，在蓝宝石层中包含两种调节衬底，其中，第一调节衬底为石墨(热膨胀系数为负数)，第二调节衬底为氮化铝(热膨胀系数4.2＊10-6/K)。两种调节衬底在蓝宝石层中以纳米尺度分散和间隔，调节衬底的宽度以及相邻调节衬底之间的间隔均为50nm，且沉积的调节衬底的上表面低于蓝宝石层和氮化物层的界面，此时调节衬底位于蓝宝石层中最深处的深度大于调节衬底的厚度。第一调节衬底的数量为第二调节衬底的数量的2倍。在调节衬底沉积完成后，直接沉积氮化铝，从而使得部分氮化铝材料沉积在调节衬底的上表面与蓝宝石层和氮化物层的界面之间的空间内。Embodiment 4 provides a composite substrate comprising a sapphire layer and an aluminum nitride layer on the sapphire layer, the sapphire layer comprising two conditioning substrates, wherein the first conditioning substrate is graphite ( The coefficient of thermal expansion is a negative number), and the second conditioning substrate is aluminum nitride (thermal expansion coefficient 4.2*10 -6 /K). The two adjustment substrates are dispersed and spaced in the nanometer scale in the sapphire layer, the width of the substrate is adjusted, and the spacing between adjacent adjustment substrates is 50 nm, and the upper surface of the deposited adjustment substrate is lower than the sapphire layer and nitrogen. The interface of the layer, at which point the depth of the adjustment substrate at the deepest point in the sapphire layer is greater than the thickness of the conditioning substrate. The number of first adjustment substrates is twice the number of second adjustment substrates. After the deposition of the conditioning substrate is completed, aluminum nitride is directly deposited such that a portion of the aluminum nitride material is deposited in a space between the upper surface of the conditioning substrate and the interface of the sapphire layer and the nitride layer.
实施例5Example 5
一种实施例1中的复合衬底的制备方法，包括如下步骤：A method for preparing a composite substrate according to Embodiment 1, comprising the steps of:
1、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第一调节衬底凹槽，该第一调节衬底凹槽的深度为蓝宝石层厚度的3/5；After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the depth of the first adjustment substrate recess being 3/5 of the thickness of the sapphire layer;
2、在第一调节衬底凹槽中沉积石墨形成第一调节衬底，第一调节衬底的厚度与第一调节衬底凹槽的深度相等；2. depositing graphite in the first adjustment substrate recess to form a first adjustment substrate, the thickness of the first adjustment substrate being equal to the depth of the first adjustment substrate recess;
3、除去掩膜材料并进行洗涤；3. removing the mask material and washing it;
4、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第二调节衬底凹槽，该第二调节衬底凹槽的深度为蓝宝石层厚度的3/5；After depositing the mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 3/5 of the thickness of the sapphire layer;
5、在第二调节衬底凹槽中沉积碳化硅形成第二调节衬底，第二调节衬底的厚度与第二调节衬底凹槽的深度相等；5. depositing silicon carbide in the second adjustment substrate recess to form a second adjustment substrate, the thickness of the second adjustment substrate being equal to the depth of the second adjustment substrate recess;
6、除去掩膜材料并进行洗涤；6. Remove the mask material and wash it;
7、在蓝宝石层上沉积氮化铝材料；7. depositing an aluminum nitride material on the sapphire layer;
8、在氮气氛围下，从1200度温度下，退火。8. Anneal under a nitrogen atmosphere at a temperature of 1200 °C.
实施例6Example 6
一种实施例2中的复合衬底的制备方法，包括如下步骤：A method for preparing a composite substrate in embodiment 2, comprising the steps of:
1、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第一调节衬底凹槽，该第一调节衬底凹槽的深度为蓝宝石层厚度的3/5； After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the depth of the first adjustment substrate recess being 3/5 of the thickness of the sapphire layer;
2、在第一调节衬底凹槽中沉积二氧化硅形成第一调节衬底，第一调节衬底的厚度与第一调节衬底凹槽的深度相等，同时，第一调节衬底在基础衬底的厚度方向的切面中具有水滴形的形状；2. depositing silicon dioxide in the first adjustment substrate recess to form a first adjustment substrate, the thickness of the first adjustment substrate being equal to the depth of the first adjustment substrate recess, and at the same time, the first adjustment substrate is on the basis a cut surface having a teardrop shape in a thickness direction of the substrate;
3、除去掩膜材料并进行洗涤；3. removing the mask material and washing it;
4、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第二调节衬底凹槽，该第二调节衬底凹槽的深度为蓝宝石层厚度的3/5；After depositing the mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 3/5 of the thickness of the sapphire layer;
5、在第二调节衬底凹槽中沉积氮化铝形成第二调节衬底，第二调节衬底的厚度与第二调节衬底凹槽的深度相等，同时，第二调节衬底在基础衬底的厚度方向的切面中也具有水滴形的形状；5. Depositing aluminum nitride in the second adjustment substrate recess to form a second adjustment substrate, the thickness of the second adjustment substrate being equal to the depth of the second adjustment substrate recess, and at the same time, the second adjustment substrate is on the basis The cut surface in the thickness direction of the substrate also has a shape of a teardrop shape;
6、除去掩膜材料并进行洗涤；6. Remove the mask material and wash it;
7、在蓝宝石层上沉积氮化铝材料后，沉积氮化镓材料；7. depositing a gallium nitride material after depositing an aluminum nitride material on the sapphire layer;
8、在氮气氛围下，从1200度温度下，退火。8. Anneal under a nitrogen atmosphere at a temperature of 1200 °C.
实施例7Example 7
一种实施例3中的复合衬底的制备方法，包括如下步骤：A method for preparing a composite substrate in embodiment 3, comprising the steps of:
1、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第一调节衬底凹槽，该第一调节衬底凹槽的深度为蓝宝石层厚度的2/3；After depositing a mask material on the sapphire layer, etching the sapphire layer to form a first adjustment substrate recess, the first adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer;
2、在第一调节衬底凹槽中沉积石墨形成第一调节衬底，第一调节衬底的厚度为蓝宝石层厚度的1/2；2. depositing graphite in the first adjustment substrate recess to form a first adjustment substrate, the thickness of the first adjustment substrate being 1/2 of the thickness of the sapphire layer;
3、除去掩膜材料并进行洗涤；3. removing the mask material and washing it;
4、在蓝宝石层上沉积掩膜材料后，对蓝宝石层进行蚀刻形成第二调节衬底凹槽，该第二调节衬底凹槽的深度为蓝宝石层厚度的2/3；After depositing a mask material on the sapphire layer, etching the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer;
5、在第二调节衬底凹槽中沉积氮化铝形成第二调节衬底，第二调节衬底的厚度为蓝宝石层厚度的1/2；5, depositing aluminum nitride in the second adjustment substrate recess to form a second adjustment substrate, the thickness of the second adjustment substrate is 1/2 of the thickness of the sapphire layer;
6、除去掩膜材料并进行洗涤；6. Remove the mask material and wash it;
7、在第一和第二调节衬底的上表面至蓝宝石层的上表面之间的空间中沉积蓝宝石材料至蓝宝石层的上表面；7. depositing a sapphire material to the upper surface of the sapphire layer in a space between the upper surface of the first and second conditioning substrates to the upper surface of the sapphire layer;
8、在蓝宝石层上沉积氮化铝材料后，沉积氮化镓材料；8. depositing a gallium nitride material after depositing an aluminum nitride material on the sapphire layer;
9、在氮气氛围下，从1200度温度下，退火。 9. Anneal under a nitrogen atmosphere at a temperature of 1200 °C.
实施例8Example 8
一种实施例4中的复合衬底的制备方法，包括如下步骤：A method for preparing a composite substrate according to Embodiment 4, comprising the steps of:
1、采用纳米蚀刻技术对蓝宝石层进行蚀刻形成第一调节衬底凹槽，该第一调节衬底凹槽的深度为蓝宝石层厚度的2/3，宽度为50nm；1. The sapphire layer is etched by using a nano-etching technique to form a first adjustment substrate recess, the first adjustment substrate recess having a depth of 2/3 of the thickness of the sapphire layer and a width of 50 nm;
2、在第一调节衬底凹槽中沉积石墨形成第一调节衬底，第一调节衬底的厚度为蓝宝石层厚度的1/2；2. depositing graphite in the first adjustment substrate recess to form a first adjustment substrate, the thickness of the first adjustment substrate being 1/2 of the thickness of the sapphire layer;
3、采用纳米蚀刻技术对蓝宝石层进行蚀刻形成第二调节衬底凹槽，该第二调节衬底凹槽的深度为蓝宝石层厚度的2/3，宽度为50nm；3, using a nano-etching technique to etch the sapphire layer to form a second adjustment substrate recess, the second adjustment substrate recess has a depth of 2/3 of the thickness of the sapphire layer and a width of 50 nm;
4、在第二调节衬底凹槽中沉积氮化铝形成第二调节衬底，第二调节衬底的厚度为蓝宝石层厚度的1/2；4, depositing aluminum nitride in the second adjustment substrate recess to form a second adjustment substrate, the thickness of the second adjustment substrate is 1/2 of the thickness of the sapphire layer;
5、在蓝宝石层和第一、第二调节衬底上沉积氮化铝材料；5. depositing an aluminum nitride material on the sapphire layer and the first and second conditioning substrates;
6、在氮气氛围下，从1200度温度下，退火。6. Anneal under a nitrogen atmosphere at a temperature of 1200 °C.
实施例9Example 9
一种发光二极管，该发光二极管包括本申请实施例1的复合衬底和位于衬底上的外延片，以及电极等。A light emitting diode comprising the composite substrate of Embodiment 1 of the present application and an epitaxial wafer on the substrate, and an electrode or the like.
实施例10Example 10
一种mos场效应晶体管，包括本申请实施例1的复合衬底与位于衬底上的其他功能层。A mos field effect transistor comprising the composite substrate of Embodiment 1 of the present application and other functional layers on the substrate.
以上所述仅为本发明的较佳实施方式而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。 The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. Within the scope.

Claims (12)

  1. 一种复合衬底，包括：基础衬底和位于所述基础衬底上的氮化物层，所述基础衬底中嵌入有至少两种具有不同热膨胀系数的调节衬底，相邻调节衬底之间由基础衬底材料间隔开。A composite substrate comprising: a base substrate and a nitride layer on the base substrate, wherein the base substrate is embedded with at least two adjustment substrates having different thermal expansion coefficients, adjacent to the adjustment substrate Interposed by the base substrate material.
  2. 如权利要求1所述的复合衬底，其中，所述调节衬底在基础衬底的厚度方向的切面中具有长方形、水滴形、梯形的形状。The composite substrate according to claim 1, wherein the adjustment substrate has a rectangular shape, a teardrop shape, and a trapezoidal shape in a cut surface in a thickness direction of the base substrate.
  3. 如权利要求1所述的复合衬底，其中，所述基础衬底中包含两种具有不同热膨胀系数的调节衬底，第一调节衬底的材料包括石墨、石墨烯或者二氧化硅，第二调节衬底的材料包括碳化硅或者氮化铝。The composite substrate according to claim 1, wherein said base substrate comprises two kinds of conditioning substrates having different coefficients of thermal expansion, and the material of the first conditioning substrate comprises graphite, graphene or silicon dioxide, and second The material for adjusting the substrate includes silicon carbide or aluminum nitride.
  4. 如权利要求1所述的复合衬底，其中，相邻调节衬底之间的间隔为1至100nm。The composite substrate according to claim 1, wherein an interval between adjacent adjustment substrates is 1 to 100 nm.
  5. 如权利要求4所述的复合衬底，其中，所述调节衬底的上表面低于基础衬底的上表面，且在所述调节衬底上沉积氮化物层。The composite substrate according to claim 4, wherein an upper surface of the conditioning substrate is lower than an upper surface of the base substrate, and a nitride layer is deposited on the conditioning substrate.
  6. 如权利要求1所述的复合衬底，其中，所述氮化物层为双层氮化物层，所述氮化物层的材料为氮化铝、氮化镓或者氮化铝镓。The composite substrate according to claim 1, wherein said nitride layer is a two-layer nitride layer, and said nitride layer is made of aluminum nitride, gallium nitride or aluminum gallium nitride.
  7. 一种复合衬底的制备方法，包括：A method for preparing a composite substrate, comprising:
    在基础衬底中形成至少两种调节衬底；Forming at least two conditioning substrates in the base substrate;
    在基础衬底上沉积氮化物材料形成氮化物层；Depositing a nitride material on the base substrate to form a nitride layer;
    将复合衬底在氮气氛围下从1000至1200℃的温度下退火，The composite substrate is annealed at a temperature of 1000 to 1200 ° C under a nitrogen atmosphere.
    其中，所述至少两种调节衬底具有不同的热膨胀系数，且相邻调节衬底之间由基础衬底材料间隔开。Wherein the at least two conditioning substrates have different coefficients of thermal expansion, and adjacent conditioning substrates are spaced apart by the base substrate material.
  8. 如权利要求7所述的复合衬底的制备方法，其中，在所述基础衬底中形成n种调节衬底，且所述“在所述基础衬底中形成n种调节衬底”如下进行：The method of manufacturing a composite substrate according to claim 7, wherein n kinds of adjustment substrates are formed in said base substrate, and said "n-type adjustment substrates are formed in said base substrate" as follows :
    在基础衬底上沉积掩膜材料后，对基础衬底进行蚀刻形成第一调节衬底凹槽；After depositing a mask material on the base substrate, etching the base substrate to form a first adjustment substrate recess;
    在第一调节衬底凹槽中沉积第一调节衬底材料形成第一调节衬底；Depositing a first conditioning substrate material in the first conditioning substrate recess to form a first conditioning substrate;
    除去掩膜材料并进行洗涤；Removing the mask material and washing;
    重复前述三个步骤，直至形成第n种调节衬底； Repeat the foregoing three steps until the nth adjustment substrate is formed;
    其中，n为2以上的整数。Wherein n is an integer of 2 or more.
  9. 如权利要求8所述的复合衬底的制备方法，其中，所述第一调节衬底至所述第n调节衬底的厚度小于所述第一调节衬底凹槽至所述第n调节衬底凹槽的深度，使得在所述第一调节衬底至所述第n调节衬底的上方形成空间。The method of manufacturing a composite substrate according to claim 8, wherein a thickness of said first adjustment substrate to said nth adjustment substrate is smaller than said first adjustment substrate groove to said nth adjustment liner The depth of the bottom groove is such that a space is formed above the first conditioning substrate to the nth conditioning substrate.
  10. 如权利要求9所述的复合衬底的制备方法，其中，所述方法，在“在基础衬底上沉积氮化物材料形成氮化物层”步骤前，进一步包括：在所述空间中沉积基础衬底材料。The method of preparing a composite substrate according to claim 9, wherein the method further comprises: depositing a foundation lining in the space before the step of "depositing a nitride material on the base substrate to form a nitride layer" Bottom material.
  11. 如权利要求9所述的复合衬底的制备方法，其中，相邻调节衬底之间的间隔为1至100nm。The method of producing a composite substrate according to claim 9, wherein an interval between adjacent adjustment substrates is 1 to 100 nm.
  12. 一种半导体器件，包括权利要求1至6中任一项所述的复合衬底。 A semiconductor device comprising the composite substrate of any one of claims 1 to 6.
PCT/CN2017/100213 2017-09-01 2017-09-01 Composite substrate, preparation method therefor and semiconductor device comprising same WO2019041311A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681975A (en) * 2009-03-30 2010-03-24 香港应用科技研究院有限公司 Main substrate of nitride-based illuminating device
CN101807637A (en) * 2009-02-18 2010-08-18 Lg伊诺特有限公司 Semiconductor light emitting device and light emitting device package including the same
US20100208431A1 (en) * 2008-10-09 2010-08-19 Dugas Matthew P Patterned Composite Structures and Methods of Making the Same
CN102339798A (en) * 2010-07-22 2012-02-01 展晶科技(深圳)有限公司 Composite substrate, gallium nitride-based element and method for manufacturing same
CN104078325A (en) * 2013-03-25 2014-10-01 英飞凌科技奥地利有限公司 Method and substrate for thick III-N epitaxy
WO2016126787A1 (en) * 2015-02-05 2016-08-11 Ii-Vi Incorporated Composite substrate with alternating pattern of diamond and metal or metal alloy

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100208431A1 (en) * 2008-10-09 2010-08-19 Dugas Matthew P Patterned Composite Structures and Methods of Making the Same
CN101807637A (en) * 2009-02-18 2010-08-18 Lg伊诺特有限公司 Semiconductor light emitting device and light emitting device package including the same
CN101681975A (en) * 2009-03-30 2010-03-24 香港应用科技研究院有限公司 Main substrate of nitride-based illuminating device
CN102339798A (en) * 2010-07-22 2012-02-01 展晶科技(深圳)有限公司 Composite substrate, gallium nitride-based element and method for manufacturing same
CN104078325A (en) * 2013-03-25 2014-10-01 英飞凌科技奥地利有限公司 Method and substrate for thick III-N epitaxy
WO2016126787A1 (en) * 2015-02-05 2016-08-11 Ii-Vi Incorporated Composite substrate with alternating pattern of diamond and metal or metal alloy

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