WO2019037388A1 - 彩膜基板及其制作方法、显示面板 - Google Patents

彩膜基板及其制作方法、显示面板 Download PDF

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Publication number
WO2019037388A1
WO2019037388A1 PCT/CN2018/074102 CN2018074102W WO2019037388A1 WO 2019037388 A1 WO2019037388 A1 WO 2019037388A1 CN 2018074102 W CN2018074102 W CN 2018074102W WO 2019037388 A1 WO2019037388 A1 WO 2019037388A1
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Prior art keywords
quantum dot
regions
layer
substrate
colored photoresist
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English (en)
French (fr)
Inventor
史文
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/081,382 priority Critical patent/US20200348562A1/en
Publication of WO2019037388A1 publication Critical patent/WO2019037388A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color film substrate and a method for fabricating the same, and a display panel and a display.
  • the color gamut of ordinary liquid crystal displays currently on the market is generally between 68-72% NTSC, and cannot provide high quality display effects.
  • the quantum dot material is a photoluminescent material and refers to inorganic semiconductor nanocrystallites having a particle diameter of between 1 and 100 nm. Due to the small particle size of the quantum dots, electrons and holes in the quantum dots The motion in the three-dimensional direction is limited, and the continuous band structure becomes a discrete level structure with molecular characteristics, which can emit fluorescence after being excited.
  • the spectral half-wave width is narrow, so the emitted light color purity is high, and the color gamut of the display panel can be significantly improved.
  • the wavelength of the emitted light can be adjusted simply by adjusting the size of the quantum dot, and the display effect of the display panel can be further improved.
  • the red, green, and blue colors are generally displayed by using a blue or violet backlight to excite the quantum dot layer on the color filter substrate, but part of the short-wavelength light emitted by the backlight cannot be completely absorbed by the quantum dot. Therefore, light leakage of the quantum dot layer is generated, thereby affecting the light purity of the color filter substrate.
  • the short-wavelength light of the backlight is absorbed by the colored photoresist layer and transmitted through the quantum dot layer.
  • the formation of the colored photoresist layer and the quantum dot layer needs to be separately formed, and the manufacturing process of the color filter substrate is increased, and the manufacturing cost is high.
  • the invention provides a color film substrate, and simultaneously forms the colored photoresist layer and the quantum dot layer, reduces the manufacturing process of the color film substrate, and reduces the manufacturing cost.
  • the color filter substrate includes a substrate, a colored photoresist layer and a quantum dot layer sequentially stacked on the substrate, an emission wavelength of the quantum dot layer is the same as a transmission wavelength of the colored photoresist layer, and the quantum The outer surface of the spot is bonded to a surface modifying group.
  • the color film substrate further includes a black matrix, the black matrix is stacked on the substrate, the black matrix includes a plurality of deposition grooves arranged in an array, and a bottom wall of the deposition groove is the substrate.
  • the quantum dot layer includes a plurality of arrays of quantum dot layer regions
  • the colored photoresist layer includes a plurality of arrays of colored photoresist layer regions
  • one of the quantum dot layers is deposited in each of the deposition trenches. a region and one of the colored photoresist layer regions, and the colored photoresist layer region is located between the quantum dot layer region and the substrate.
  • the plurality of quantum dot layer regions include a plurality of red light quantum dot regions and a plurality of green light quantum dot regions, or include a plurality of red light quantum dot regions, a plurality of green light quantum dot regions, and a plurality of blue light quantum dot regions;
  • the colored photoresist layer region includes a plurality of red photoresist regions and a plurality of green photoresist regions, or includes a plurality of red photoresist regions, a plurality of green photoresist regions, and a plurality of blue photoresist regions, each of the The luminescent color of the quantum dot layer region deposited in the deposition trench is the same as the color of the colored photoresist layer region.
  • the surface modifying group is a fluorine-containing group.
  • the invention also provides a method for manufacturing a color film substrate, comprising the steps of:
  • the colored film mixture solution is dried to obtain a colored photoresist layer and a quantum dot layer laminated on the colored photoresist layer, and the colored photoresist layer is located between the substrate and the quantum dot layer.
  • step of "drying the color film mixed solution” includes:
  • the surface modifying group is a fluorine-containing group.
  • the solvent comprises any one of water, alcohol or glycerin.
  • the present invention also provides a display panel, the display panel includes a liquid crystal layer, an array substrate, and the color filter substrate, wherein the array substrate is disposed opposite to the color filter substrate, and the liquid crystal layer is located on the color filter substrate and Between the array substrates.
  • the color film substrate provided by the invention and the manufacturing method thereof, the surface modification of the quantum dot material by a surface modifying agent, thereby reducing the surface energy of the quantum dot material, and the quantum dot material and the colored photoresist The materials were mixed, and the mixed color film solution obtained by the mixing was dried. Since the quantum dot material has a low surface energy, the quantum dot material and the colored photoresist material are automatically layered during drying of the color film mixed material, thereby simultaneously forming a quantum dot layer. And a colored photoresist layer. Further, the manufacturing process of the color filter substrate is reduced, and the manufacturing cost is reduced.
  • FIG. 1 is a schematic cross-sectional view showing a color filter substrate according to an embodiment of the present invention
  • FIG. 2 is a flow chart of preparation of the color filter substrate of FIG. 1;
  • FIG. 3 to FIG. 5 are schematic cross-sectional views showing respective steps of preparing the color filter substrate of FIG. 1.
  • the present invention provides a color filter substrate 100.
  • the color filter substrate 100 includes a substrate 10, a black matrix 20 laminated on the substrate 10, and a colored photoresist layer 30 and a quantum dot layer 40 which are sequentially laminated on the substrate 10.
  • the substrate 10 is a transparent substrate and may be a rigid glass substrate or a flexible plastic substrate. In this embodiment, the substrate 10 is a transparent glass substrate.
  • the black matrix 20 is laminated on the substrate 10.
  • the black matrix 20 includes a plurality of deposition slots 21 arranged in an array.
  • the deposition tank 21 includes a sidewall 22 and a bottom wall 23, and the bottom wall 23 is a side of the substrate 10 facing the black matrix 20.
  • the colored photoresist layer 30 is a colored photoresist film laminated on the surface of the substrate 10.
  • the colored photoresist layer 30 includes a plurality of colored photoresist layer regions 31 arranged in an array.
  • One of the colored photoresist layer regions 31 is deposited in each of the deposition grooves 21, that is, the colored photoresist layer regions 31 are in one-to-one correspondence with the deposition grooves 21 and are accommodated in the deposition grooves 21, and
  • the colored photoresist layer region 31 is deposited on the bottom wall 23 of the deposition bath.
  • the plurality of colored photoresist layer regions 31 include a plurality of red photoresist regions, a plurality of green photoresist regions, and a plurality of blue photoresist regions. It can be understood that when the backlight is blue, the blue backlight can directly pass through the substrate 10 to emit blue light. Therefore, only a plurality of the colored photoresist layer regions 31 can be The red photoresist region and the plurality of green photoresist regions are included, and the blue photoresist region is not included.
  • the quantum dot layer 40 is laminated on one side of the colored photoresist layer 30 facing away from the substrate 10.
  • the quantum dot layer 40 is a thin film formed of quantum dots.
  • the quantum dot layer 40 includes a plurality of quantum dot layer regions 41 arranged in an array. Each of the quantum dot layer regions 41 is also in one-to-one correspondence with the deposition tank 21 and is housed in the deposition tank 21.
  • the plurality of quantum dot layer regions 41 include a plurality of red light quantum dot regions, a plurality of green light quantum dot regions, and a plurality of blue light quantum dot regions. It can be understood that when the backlight is blue, the blue backlight can directly pass through the substrate 10 to emit blue light. Therefore, a plurality of the quantum dot layer regions 41 may include only A plurality of red light quantum dot regions and a plurality of green light quantum dot regions do not include the blue light quantum dot regions.
  • the light-emitting wavelength of the quantum dot layer 40 is the same as the light-transmitting wavelength of the colored photoresist layer 30, so that light emitted by the quantum dot layer 40 can be transmitted through the organic photoresist layer 30 and transmitted through the
  • the substrate 10 is emitted, and other short-wavelength light that the quantum dot 40 cannot absorb and convert cannot pass through the organic photoresist layer 30, thereby ensuring light transmission through the colored photoresist layer 30 and the substrate 10.
  • the color purity is high, so that a better display effect is obtained.
  • the luminescent color of the quantum dot layer region 41 deposited in each of the deposition grooves 21 is the same as the color of the colored photoresist layer region 31. That is, one of the red photoresist regions and one of the red light quantum dot regions are sequentially stacked and housed in one of the deposition grooves 21; one of the green photoresist regions and one of the green light quantum dot regions are sequentially stacked and housed in one In the deposition tank 21, one of the blue photoresist regions and one of the blue quantum dot regions are sequentially stacked and housed in one of the deposition grooves 21, thereby ensuring the emission wavelength of the quantum dot layer 40 and the colored
  • the light transmission layer 30 has the same light transmission wavelength.
  • the quantum dot layer 40 is formed of quantum dots, and the outer surface of the quantum dots is bonded with a surface modifying group.
  • the surface energy of the quantum dots is reduced by the surface modifying groups.
  • the surface modifying group is a fluorine-containing group. It will be appreciated that the surface modifying group may also be other groups capable of reducing the surface energy of the quantum dots.
  • Simultaneous formation of the quantum dot layer 40 and the colored photoresist layer 30 is achieved by bonding surface modifying groups on the surface of the quantum dot material to reduce the surface energy of the quantum dot material.
  • the invention also provides a method for fabricating a color film substrate.
  • the method for fabricating the color filter substrate is used to fabricate the color film substrate 100 described above, including the steps of:
  • Step 201 referring to FIG. 3, a substrate 10 is provided, and a black matrix material layer 20a is deposited on the substrate 10.
  • the substrate 10 is a transparent substrate and may be a rigid glass substrate or a flexible plastic substrate. In this embodiment, the substrate 10 is a transparent glass substrate.
  • the black matrix material layer 20a is formed on either side of the substrate 10 by inkjet printing, printing or spin coating.
  • Step 202 referring to FIG. 4, patterning the black matrix material layer 20a to obtain a black matrix 20.
  • the black matrix 20 is obtained by applying a photoresist layer on the black matrix material layer 20a, developing and exposing the photoresist layer, and etching the black matrix material layer 20a.
  • the black matrix 20 includes a plurality of deposition slots 21 arranged in an array.
  • the deposition tank 21 includes a sidewall 22 and a bottom wall 23, and the bottom wall 23 is a side of the substrate 10 facing the black matrix 20.
  • Step 203 synthesizing a quantum dot, the outer surface of the quantum dot being bonded with a surface modifying group.
  • a surface modifying agent is added to the raw material of the quantum dot, and after the quantum dot is synthesized, the outer surface of the quantum dot is bound with a surface modifying group.
  • the obtained quantum dot having no surface modifying group on the outer surface is reacted with the surface modifying agent to obtain an outer surface combined with a surface modifying group.
  • the quantum dots of the group is added to the raw material of the quantum dot, and after the quantum dot is synthesized, the outer surface of the quantum dot is bound with a surface modifying group.
  • the surface of the quantum dot material is modified to reduce the surface energy of the quantum dot material by bonding a surface modifying group to the outer surface of the quantum dot.
  • the surface modifying agent is a fluorine-containing ligand.
  • the quantum dots include green light quantum dots, red light quantum dots, and blue light quantum dots.
  • Step 204 providing a colored photoresist material and a solvent, and mixing the colored photoresist material and the synthesized quantum dots by a solvent to obtain a color film mixing solution 50.
  • the color film mixture material 50 is obtained by mixing the colored photoresist material and the synthesized quantum dots by the solvent.
  • the solvent includes any one of water, alcohol or glycerin.
  • the colored photoresist material comprises a blue photoresist material, a red photoresist material, and a green photoresist material.
  • the color film mixing solution 50 having different colors can be obtained by mixing the colored photoresist materials of different colors with the quantum dots capable of emitting light of different colors.
  • a red mixed solution is obtained by mixing the red light quantum dots, the red photoresist material, and a solvent; and the green mixed solution is obtained by mixing the green light quantum dots, the green photoresist material, and a solvent;
  • the blue quantum dots, the blue photoresist material, and the solvent are mixed to obtain a blue mixed solution.
  • Step 205 referring to FIG. 5, a color film mixing solution 50 is deposited in each of the deposition tanks 21.
  • the color film mixing solution 50 of different colors is separately deposited in the deposition tank 21 by inkjet printing, printing or spin coating.
  • Step 206 referring back to FIG. 1, drying the color film mixing solution 50, and simultaneously obtaining a colored photoresist layer 30 and a quantum dot layer 40 laminated on the colored photoresist layer 30.
  • drying the color film mixing solution 50 includes the steps of: first naturally drying the color film mixing solution 50, and naturally stratifying the quantum dots and the colored photoresist material in the color film mixing solution 50; Drying or heating the color film mixing solution to rapidly remove the solvent in the color film mixing solution to simultaneously obtain the colored photoresist layer 30 and the quantum dot layer 40 laminated on the colored photoresist layer. And the colored photoresist layer 40 is located between the substrate 10 and the quantum dot layer 40. After drying the color film mixing solution 50, the colored photoresist material in the color film mixing solution 50 forms the colored photoresist layer 30, and the quantum dot material forming body in the color film mixing solution 50 is formed. The quantum dot layer 40 is described.
  • the red light quantum dot is dried to form a red light quantum dot layer region, and the red photoresist material is dried to form a red light photoresist layer region; the green light quantum dot is dried to form a green light quantum dot layer. a region, the green photoresist material is dried to form a green photoresist layer region; the blue quantum dot is dried to form a blue quantum dot layer region, and the blue photoresist material is dried to form a blue photoresist layer region.
  • the quantum dots spontaneously move toward the surface of the color film mixing solution, thereby causing the quantum dots and colored
  • the photoresist material is automatically layered, and the layer of colored photoresist material is between the quantum dot material layer and the substrate 10. Further, after the drying of the color film mixing solution 50 is completed, the colored photoresist layer 30 and the quantum dot layer 40 laminated on the colored photoresist layer 30 can be simultaneously formed. That is, the formation of the colored photoresist layer 30 and the quantum dot layer 40 is completed in one step, which reduces the manufacturing process of the color filter substrate 100 and reduces the manufacturing cost.
  • the present invention also provides a display panel comprising a liquid crystal layer, an array substrate, and the color film substrate 100 described above.
  • the array substrate is disposed opposite to the color filter substrate 100.
  • the liquid crystal layer is located between the color filter substrate 100 and the array substrate.
  • the present invention also provides a display including a backlight and the display panel described above, the backlight being located on a side of the array substrate of the display panel away from the color filter substrate 100.
  • Light is emitted to the display panel by the backlight, and the light passes through the colored photoresist layer 30 and the quantum dot layer 40 in the plurality of deposition grooves 21 to emit three primary colors (red, blue, green) light.
  • the combination of light thus showing a rich display.
  • the photo-luminescent quantum dot material emits light, the light color purity of the emitted light can be made high.
  • the colored photoresist layer 30 is added between the quantum dot layer 40 and the substrate 10 to prevent light leakage of the quantum dot layer 40, thereby further increasing the light purity of the display.
  • the backlight is a blue or violet backlight.

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Abstract

一种彩膜基板（100）及其制作方法，通过表面修饰剂对量子点材料进行表面修饰，从而降低量子点材料的表面能。再将量子点材料与有色光阻材料进行混合，得到彩膜混合溶液（50），并对彩膜混合溶液（50）进行干燥。由于量子点材料有较低的表面能，在对彩膜混合材料进行干燥的过程中，量子点材料与有色光阻材料会自动进行分层，从而能够同时形成量子点层（40）及有色光阻层（30），进而减少彩膜基板（100）的制作工序，降低制作成本。

Description

彩膜基板及其制作方法、显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种彩膜基板及其制作方法，以及一种显示面板及显示器。
背景技术
目前市面上的普通液晶显示器的色域一般在68-72％NTSC之间，不能提供高质量的显示效果。现有一种量子点显示面板，能够明显提高显示面板的色域，进而得到高质量的显示效果。量子点材料为一种光致发光材料，是指粒径在1-100nm之间的无机半导体纳米晶粒，由于所述量子点的小的粒径，所述量子点内的电子和空穴的三维方向的运动均被限制，连续的能带结构变成具有分子特性的分立能级结构，受激后可以发射荧光。由于其分立能级结构，光谱半波宽较窄，因此发射的光色纯度较高，能够明显提高显示面板的色域。另外，可以简单的通过调整量子点尺寸的大小来调节发射光的波长，能够进一步提高显示面板的显示效果。
现有技术中，一般通过使用蓝光或紫光背光源激发彩膜基板上的量子点层实现红、绿、蓝三色显示，但背光源发出的部分短波长的光不能够完全被量子点吸收转换，从而会产生量子点层的漏光，进而影响所述彩膜基板的出光纯度。现有技术中，为了防止量子点层漏光，需要先在基板上形成与量子点层发光波长相匹配的有色光阻层，再在所述有色光阻层上形成量子点层的在量子点层。通过所述有色光阻层吸收背光源的短波长光，并透过量子点层发射的光。但是，形成所述有色光阻层及所述量子点层需要分别形成，增加了所彩膜基板的制作工序，制作成本较高。
发明内容
本发明提供一种彩膜基板，同时形成所述有色光阻层及量子点层，减少所述彩膜基板的制作工序，降低制作成本。
所述彩膜基板包括基板，依次层叠于所述基板上的有色光阻层及量子点 层，所述量子点层的发光波长与所述有色光阻层的透光波长相同，且所述量子点外表面结合有表面修饰基团。
其中，所述彩膜基板还包括黑矩阵，所述黑矩阵层叠于所述基板上，所述黑矩阵包括多个阵列排布的沉积槽，所述沉积槽的底壁为所述基板，所述量子点层包括多个阵列排布的量子点层区域，所述有色光阻层包括多个阵列排布的有色光阻层区域，每个所述沉积槽内沉积有一个所述量子点层区域及一个所述有色光阻层区域，且所述有色光阻层区域位于所述量子点层区域及所述基板之间。
其中，多个所述量子点层区域包括数个红光量子点区域及数个绿光量子点区域，或者包括数个红光量子点区域、数个绿光量子点区域及数个蓝光量子点区域；多个所述有色光阻层区域中包括数个红色光阻区域及数个绿色光阻区域，或者包括数个红色光阻区域、数个绿色光阻区域及数个蓝色光阻区域，每个所述沉积槽内沉积的所述量子点层区域的发光颜色与所述有色光阻层区域的颜色相同。
其中，所述表面修饰基团为含氟基团。
本发明还提供一种彩膜基板的制作方法，包括步骤：
提供一基板，并在所述基板上沉积黑矩阵材料层；
图案化所述黑矩阵材料层，得到黑矩阵，所述黑矩阵包括多个阵列排布的沉积槽；
合成得到量子点，所述量子点的外表面结合有表面修饰基团；
提供有色光阻材料及溶剂，通过溶剂将所述有色光阻材料及合成得到的所述量子点进行混合得到彩膜混合溶液；
在每个所述沉积槽内沉积所述彩膜混合溶液；
干燥所述彩膜混合溶液，同时得到有色光阻层及层叠于所述有色光阻层上的量子点层，所述有色光阻层位于所述基板及所述量子点层之间。
其中，步骤“干燥所述彩膜混合溶液”包括：
先自然干燥所述彩膜混合溶液，使所述彩膜混合溶液中的量子点与有色光阻材料自然分层；
再真空干燥或加热干燥所述彩膜混合溶液，去除所述彩膜混合溶液中的溶 剂，以同时得所述有色光阻层及层叠于所述有色光阻层上的所述量子点层，且所述有色光阻层位于所述基板及所述量子点层之间。
其中，所述表面修饰基团为含氟基团。
其中，所述溶剂包括水、酒精或甘油中任一种。
本发明还提供一种显示面板，所述显示面板包括液晶层、阵列基板及上述的彩膜基板，所述阵列基板与所述彩膜基板相对设置，所述液晶层位于所述彩膜基板及所述阵列基板之间。
本发明提供的所述彩膜基板及其制作方法，通过表面修饰剂对所述量子点材料进行表面修饰，从而降低所述量子点材料的表面能，并将所述量子点材料与有色光阻材料进行混合，将混合得到的所述彩膜混合溶液进行干燥。由于所述量子点材料有较低的表面能，在对所述彩膜混合材料进行干燥的过程中，所述量子点材料与有色光阻材料会自动进行分层，从而能够同时形成量子点层及有色光阻层。进而减少所述彩膜基板的制作工序，降低制作成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一实施例的彩膜基板的截面示意图；
图2是图1所述彩膜基板的制备流程图；
图3-图5是图1所述彩膜基板的制备各步骤的截面示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种彩膜基板100。所述彩膜基板100包括基板 10，层叠于所述基板10上的黑矩阵20，以及依次层叠于所述基板10上的有色光阻层30及量子点层40。
所述基板10为透明基板，可以为刚性的玻璃基板或者柔性的塑料基板。本实施例中，所述基板10为透明的玻璃基板。
所述黑矩阵20层叠于所述基板10上。所述黑矩阵20包括多个阵列排布的沉积槽21。所述沉积槽21包括侧壁22及底壁23，所述底壁23为所述基板10朝向所述黑矩阵20的一面。
所述有色光阻层30为有色光阻薄膜，层叠于所述基板10的表面。本实施例中，所述有色光阻层30包括多个阵列排布的有色光阻层区域31。每个所述沉积槽21内沉积有一个所述有色光阻层区域31，即所述有色光阻层区域31与所述沉积槽21一一对应并收容于所述沉积槽21内，并且，所述有色光阻层区域31沉积于所述沉积槽的底壁23上。本发明中，多个所述有色光阻层区域31中包括数个红色光阻区域、数个绿色光阻区域及数个蓝色光阻区域。可以理解的是，当所述背光源为蓝色时，蓝色的所述背光源能够直接透过所述基板10以出射出蓝光，因此，多个所述有色光阻层区域31中可以只包括数个红色光阻区域及数个绿色光阻区域，而不包括所述蓝色光阻区域。
所述量子点层40层叠于所述有色光阻层30背离所述基板10的一面。所述量子点层40为由量子点形成的薄膜。所述量子点层40包括多个阵列排布的量子点层区域41。每个所述量子点层区域41也与所述沉积槽21一一对应并收容于所述沉积槽21内。本实施例中，多个所述量子点层区域41包括数个红光量子点区域、数个绿光量子点区域及数个蓝光量子点区域。可以理解的是，当所述背光源为蓝色时，蓝色的所述背光源能够直接透过所述基板10以出射出蓝光，因此，多个所述量子点层区域41中可以只包括数个红光量子点区域及数个绿光量子点区域，而不包括所述蓝光量子点区域。
所述量子点层40的发光波长与所述有色光阻层30的透光波长相同，从而能够保证所述量子点层40发出的光能够透过所述有机光阻层30并透过所述基板10进行出射，所述量子点40不能够吸收并转化的其它短波长的光不能透过所述有机光阻层30，进而保证透过所述有色光阻层30及所述基板10的出光的光色纯度高，从而得到较好的显示效果。
本实施例中，每个所述沉积槽21内沉积的所述量子点层区域41的发光颜色与所述有色光阻层区域31的颜色相同。即一个所述红色光阻区域及一个所述红光量子点区域依次层叠并收容于一个所述沉积槽21中；一个所述绿色光阻区域及一个所述绿光量子点区域依次层叠并收容于一个所述沉积槽21中；一个所述蓝色光阻区域及一个所述蓝光量子点区域依次层叠并收容于一个所述沉积槽21中，从而保证所述量子点层40的发光波长与所述有色光阻层30的透光波长相同。
进一步的，本发明中，所述量子点层40由量子点形成，且所述量子点外表面结合有表面修饰基团。通过所述表面修饰基团降低所述量子点的表面能。本实施例中，所述表面修饰基团为含氟基团。可以理解的是，所述表面修饰基团还可以为其它能够降低所述量子点表面能的基团。通过在所述量子点材料表面结合表面修饰基团，降低所述量子点材料的表面能，从而实现对所述量子点层40及所述有色光阻层30的同时形成。
本发明还提供一种彩膜基板的制作方法。请参阅图2，所述彩膜基板的制作方法用于制作上述彩膜基板100，包括步骤：
步骤201，请参阅图3，提供一基板10，并在所述基板10上沉积黑矩阵材料层20a。
所述基板10为透明基板，可以为刚性的玻璃基板或者柔性的塑料基板。本实施例中，所述基板10为透明的玻璃基板。通过喷墨打印、印刷或者旋涂的方式在所述基板10的任意一面上形成所述黑矩阵材料层20a。
步骤202，请参阅图4，图案化所述黑矩阵材料层20a，得到黑矩阵20。
通过在所述黑矩阵材料层20a上涂覆光阻层，并对所述光阻层进行显影、曝光，再对所述黑矩阵材料层20a进行蚀刻，从而得到所述黑矩阵20。所述黑矩阵20包括多个阵列排布的沉积槽21。所述沉积槽21包括侧壁22及底壁23，所述底壁23为所述基板10朝向所述黑矩阵20的一面。
步骤203、合成得到量子点，所述量子点的外表面结合有表面修饰基团。
所述量子点的制作原料中加入表面修饰剂，合成得到所述量子点后，所述量子点的外表面即结合有表面修饰基团。或者，在完成合成外表面不含表面修饰基团的量子点后，再将得到的所述外表面不含表面修饰基团的量子点与表面 修饰剂进行反应，得到外表面结合有表面修饰基团的所述量子点。
通过在所述量子点的外表面结合表面修饰基团，对所述量子点材料的表面进行修饰，以降低所述量子点材料的表面能。本实施例中，所述表面修饰剂为含氟配体。进一步的，通过调整所述量子点的尺寸大小对所述量子点的发射光的波长进行调节，能够得到发出不同颜色光的量子点。本实施例中，所述量子点包括绿光量子点、红光量子点及蓝光量子点。
步骤204、提供有色光阻材料及溶剂，通过溶剂将所述有色光阻材料及合成得到的所述量子点进行混合得到彩膜混合溶液50。
通过所述溶剂将所述有色光阻材料及合成得到的所述量子点进行混合即得到所述彩膜混合材料50。所述溶剂包括水、酒精或甘油中任一种。本实施例中，所述有色光阻材料包括蓝色光阻材料、红色光阻材料及绿色光阻材料。通过将不同颜色的所述有色光阻材料与能够发出不同颜色光的所述量子点进行混合，能够得到具有不同颜色的所述彩膜混合溶液50。本实施例中，通过所述红光量子点、所述红色光阻材料及溶剂混合得到红色混合溶液；通过所述绿光量子点、所述绿色光阻材料及溶剂混合得到绿色混合溶液；通过所述蓝光量子点、所述蓝色光阻材料及溶剂混合得到蓝色混合溶液。
步骤205、请参阅图5，在每个所述沉积槽21内沉积彩膜混合溶液50。
通过喷墨打印、印刷或旋涂等方式在所述沉积槽21内分别沉积不同颜色的所述彩膜混合溶液50。
步骤206、请重新参阅图1，干燥所述彩膜混合溶液50，同时得到有色光阻层30及层叠于所述有色光阻层30上的量子点层40。
本发明中，干燥所述彩膜混合溶液50包括步骤：先自然干燥所述彩膜混合溶液50，使所述彩膜混合溶液50中的量子点与有色光阻材料自然分层；再通过真空干燥或加热干燥所述彩膜混合溶液，快速去除所述彩膜混合溶液中的溶剂，以同时得所述有色光阻层30及层叠于所述有色光阻层上的所述量子点层40，且所述有色光阻层40位于所述基板10及所述量子点层40之间。干燥所述彩膜混合溶液50后，所述彩膜混合溶液50中的所述有色光阻材料形成所述有色光阻层30，所述彩膜混合溶液50中的所述量子点材料形成所述量子点层40。进一步的，本实施例中，所述红光量子点干燥后形成红光量子点层区 域，所述红色光阻材料干燥后形成红光光阻层区域；所述绿光量子点干燥后形成绿光量子点层区域，所述绿色光阻材料干燥后形成绿色光阻层区域；所述蓝光量子点干燥后形成蓝光量子点层区域，所述蓝色光阻材料干燥后形成蓝色光阻层区域。
在干燥所述彩膜混合溶液50的过程中，由于所述量子点的低表面能，所述量子点会自发的向所述彩膜混合溶液的表面进行运动，从而使得所述量子点与有色光阻材料自动分层，且所述有色光阻材料层位于所述量子点材料层与所述基板10之间。进而使得完成所述彩膜混合溶液50的干燥后，能够同时形成所述有色光阻层30及层叠于所述有色光阻层30上的所述量子点层40。即通过一步工序即完成了所述有色光阻层30及所述量子点层40的形成，减少了所述彩膜基板100的制作工序，降低制作成本。
本发明还提供一种显示面板，所述显示面板包括液晶层、阵列基板及上述的彩膜基板100。所述阵列基板与所述彩膜基板100相对设置。所述液晶层位于所述彩膜基板100及所述阵列基板之间。
本发明还提供一种显示器，所述显示器包括背光源及上述的显示面板，所述背光源位于所述显示面板的阵列基板远离所述彩膜基板100的一侧。通过所述背光源向所述显示面板发出光线，所述光线经过多个所述沉积槽21内的所述有色光阻层30及所述量子点层40发出三原色(红、蓝、绿色)光的组合光，从而显示出色彩丰富的显示效果。并且，由于通过光致发光的量子点材料进行出光，能够使出光的光色纯度较高。并且，在所述量子点层40与所述基板10之间增加所述有色光阻层30，以防止所述量子点层40的漏光，从而进一步的增加所述显示器的出光纯度。所述背光源为蓝光或紫光背光源。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (12)

  1. 一种彩膜基板，其中，包括基板，依次层叠于所述基板上的有色光阻层及量子点层，所述量子点层的发光波长与所述有色光阻层的透光波长相同，且所述量子点外表面结合有表面修饰基团。
  2. 如权利要求1所述的彩膜基板，其中，所述彩膜基板还包括黑矩阵，所述黑矩阵层叠于所述基板上，所述黑矩阵包括多个阵列排布的沉积槽，所述沉积槽的底壁为所述基板，所述量子点层包括多个阵列排布的量子点层区域，所述有色光阻层包括多个阵列排布的有色光阻层区域，每个所述沉积槽内沉积有一个所述量子点层区域及一个所述有色光阻层区域，且所述有色光阻层区域位于所述量子点层区域及所述基板之间。
  3. 如权利要求2所述的彩膜基板，其中，多个所述量子点层区域包括数个红光量子点区域及数个绿光量子点区域，或者包括数个红光量子点区域、数个绿光量子点区域及数个蓝光量子点区域；多个所述有色光阻层区域中包括数个红色光阻区域及数个绿色光阻区域，或者包括数个红色光阻区域、数个绿色光阻区域及数个蓝色光阻区域，每个所述沉积槽内沉积的所述量子点层区域的发光颜色与所述有色光阻层区域的颜色相同。
  4. 如权利要求1所述的彩膜基板，其中，所述表面修饰基团为含氟基团。
  5. 一种彩膜基板的制作方法，其中，包括步骤：
    提供一基板，并在所述基板上沉积黑矩阵材料层；
    图案化所述黑矩阵材料层，得到黑矩阵，所述黑矩阵包括多个阵列排布的沉积槽；
    合成得到量子点，所述量子点的外表面结合有表面修饰基团；
    提供有色光阻材料及溶剂，通过溶剂将所述有色光阻材料及合成得到的所述量子点进行混合，得到彩膜混合溶液；
    在每个所述沉积槽内沉积所述彩膜混合溶液；
    干燥所述彩膜混合溶液，同时得到有色光阻层及层叠于所述有色光阻层上的量子点层，所述有色光阻层位于所述基板及所述量子点层之间。
  6. 如权利要求5所述的彩膜基板的制作方法，其中，步骤“干燥所述彩 膜混合溶液”包括：
    先自然干燥所述彩膜混合溶液，使所述彩膜混合溶液中的量子点与有色光阻材料自然分层；
    再真空干燥或加热干燥所述彩膜混合溶液，去除所述彩膜混合溶液中的溶剂，以同时得所述有色光阻层及层叠于所述有色光阻层上的所述量子点层，且所述有色光阻层位于所述基板及所述量子点层之间。
  7. 如权利要求5所述的彩膜基板的制作方法，其中，所述表面修饰基团为含氟基团。
  8. 如权利要求5所述的彩膜基板的制作方法，其中，所述溶剂包括水、酒精或甘油中任一种。
  9. 一种显示面板，其中，所述显示面板包括液晶层、阵列基板及彩膜基板，所述阵列基板与所述彩膜基板相对设置，所述液晶层位于所述彩膜基板及所述阵列基板之间；所述彩膜基板包括基板，依次层叠于所述基板上的有色光阻层及量子点层，所述量子点层的发光波长与所述有色光阻层的透光波长相同，且所述量子点外表面结合有表面修饰基团。
  10. 如权利要求9所述的显示面板，其中，所述彩膜基板还包括黑矩阵，所述黑矩阵层叠于所述基板上，所述黑矩阵包括多个阵列排布的沉积槽，所述沉积槽的底壁为所述基板，所述量子点层包括多个阵列排布的量子点层区域，所述有色光阻层包括多个阵列排布的有色光阻层区域，每个所述沉积槽内沉积有一个所述量子点层区域及一个所述有色光阻层区域，且所述有色光阻层区域位于所述量子点层区域及所述基板之间。
  11. 如权利要求10所述的显示面板，其中，多个所述量子点层区域包括数个红光量子点区域及数个绿光量子点区域，或者包括数个红光量子点区域、数个绿光量子点区域及数个蓝光量子点区域；多个所述有色光阻层区域中包括数个红色光阻区域及数个绿色光阻区域，或者包括数个红色光阻区域、数个绿色光阻区域及数个蓝色光阻区域，每个所述沉积槽内沉积的所述量子点层区域的发光颜色与所述有色光阻层区域的颜色相同。
  12. 如权利要求9所述的显示面板，其中，所述表面修饰基团为含氟基团。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201675A (zh) * 2020-09-15 2021-01-08 云谷（固安）科技有限公司 显示基板及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107329314A (zh) * 2017-08-24 2017-11-07 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法、显示面板及显示器
TWI678009B (zh) * 2018-06-22 2019-11-21 友達光電股份有限公司 顯示面板及其製作方法
CN111668254A (zh) * 2019-03-05 2020-09-15 恒煦电子材料股份有限公司 具量子点的像素基板及其制作方法
CN112965287B (zh) * 2020-05-08 2022-11-29 重庆康佳光电技术研究院有限公司 一种彩膜基板的制备方法、显示装置与显示背板
CN112133734B (zh) * 2020-09-29 2022-08-30 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
CN112349745B (zh) * 2020-11-10 2021-06-11 厦门强力巨彩光电科技有限公司 Micro-LED显示面板和Micro-LED显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105116604A (zh) * 2015-09-24 2015-12-02 深圳市华星光电技术有限公司 量子点显示装置及其制作方法
US20150369989A1 (en) * 2014-06-20 2015-12-24 Hon Hai Precision Industry Co., Ltd. Backlight module and display device
CN105319765A (zh) * 2015-11-16 2016-02-10 深圳市华星光电技术有限公司 量子点显示面板的制作方法
CN105388660A (zh) * 2015-12-17 2016-03-09 深圳市华星光电技术有限公司 Coa型阵列基板的制备方法
CN105404046A (zh) * 2015-12-04 2016-03-16 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
CN107329314A (zh) * 2017-08-24 2017-11-07 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法、显示面板及显示器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120050632A1 (en) * 2010-08-31 2012-03-01 Chi Lin Technology Co., Ltd. Display apparatus having quantum dot layer
TWI580031B (zh) * 2013-12-26 2017-04-21 鴻海精密工業股份有限公司 顏色轉換層、有機電致發光顯示面板及液晶顯示面板
CN104932136B (zh) * 2015-07-01 2018-01-26 合肥鑫晟光电科技有限公司 彩膜基板及其制作方法、显示面板和显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150369989A1 (en) * 2014-06-20 2015-12-24 Hon Hai Precision Industry Co., Ltd. Backlight module and display device
CN105116604A (zh) * 2015-09-24 2015-12-02 深圳市华星光电技术有限公司 量子点显示装置及其制作方法
CN105319765A (zh) * 2015-11-16 2016-02-10 深圳市华星光电技术有限公司 量子点显示面板的制作方法
CN105404046A (zh) * 2015-12-04 2016-03-16 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
CN105388660A (zh) * 2015-12-17 2016-03-09 深圳市华星光电技术有限公司 Coa型阵列基板的制备方法
CN107329314A (zh) * 2017-08-24 2017-11-07 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法、显示面板及显示器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201675A (zh) * 2020-09-15 2021-01-08 云谷（固安）科技有限公司 显示基板及其制备方法

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