WO2019037223A1 - 一种调试方法及蒸镀机 - Google Patents

一种调试方法及蒸镀机 Download PDF

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Publication number
WO2019037223A1
WO2019037223A1 PCT/CN2017/106986 CN2017106986W WO2019037223A1 WO 2019037223 A1 WO2019037223 A1 WO 2019037223A1 CN 2017106986 W CN2017106986 W CN 2017106986W WO 2019037223 A1 WO2019037223 A1 WO 2019037223A1
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Prior art keywords
debugging
substrate
layer
photochromic
patterned
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PCT/CN2017/106986
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English (en)
French (fr)
Inventor
蒋谦
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/737,311 priority Critical patent/US10510959B2/en
Publication of WO2019037223A1 publication Critical patent/WO2019037223A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a debugging method and an evaporation machine.
  • OLED Organic Light Emitting Diode
  • an OLED film is prepared by using a vacuum evaporation technique. Specifically, the organic material is heated in a vacuum environment, so that the organic material is sublimated by heat, and the sub-pixel is printed on the substrate through a patterned mask. A corresponding organic film (also referred to as a light-emitting layer) is formed on the corresponding anode pattern, wherein different color sub-pixels correspond to different precision masks, and each color sub-pixel requires a precision mask. board. Upon continuous deposition of a plurality of materials, a OLED structure having a multilayer film structure can be formed.
  • the alignment accuracy can usually be controlled within the range of ⁇ 3 ⁇ m, but even if the alignment is up to the specification, the position of the organic film actually deposited on the anode pattern of the sub-pixel will be When an offset occurs, when the organic film or the metal film on the anode pattern of the sub-pixel is shifted, the color mixing effect is likely to occur after the display panel is lit. Therefore, before the fully automatic production, the precision mask is required.
  • the position is compensated so that after vapor deposition into a film, the film formation pattern is overlaid on the sub-pixel anode pattern, and the anode pattern is located at the center of the film formation pattern.
  • the existing method for adjusting the position of the film pattern of the precision mask is wasteful of the film-forming material, and the debugging speed is slow.
  • the technical problem to be solved by the present invention is to provide a debugging method for adjusting the relative position of a precision mask and a substrate to be processed, which can omit the organic material in the process of adjusting the relative position of the precision mask to the substrate to be processed. And improve debugging speed.
  • a technical solution adopted by the present invention is to provide a debugging method for adjusting the relative positions of the precision mask and the substrate to be processed, including:
  • the substrate for debugging includes a substrate and a photochromic layer and an anode film layer disposed on the substrate, and one of the photochromic layer and the anode film layer Pre-patterned;
  • the precision mask comprises a light transmitting region and a light shielding region
  • the light source in the debugging vapor deposition chamber is turned on, and the light on the debugging substrate is irradiated through the precision mask a color changing layer in which a portion of the photochromic layer irradiated with the irradiated light is discolored;
  • the patterned photochromic layer is disposed on the anode film layer, and the debugging is performed by evaporation.
  • a step of illuminating the photochromic layer on the debugging substrate through the precision type mask comprising: irradiating light through the light transmitting area in the precision mask to illuminate To the patterned photochromic layer such that a discoloration phenomenon occurs in a region of the photochromic layer that is patterned corresponding to the light-transmitting region, wherein discoloration occurs in the photochromic layer
  • the area is the area between the edge of the light transmissive area of the precision type mask to the edge of the patterned photochromic layer.
  • another technical solution adopted by the present invention is to provide a debugging method for adjusting the relative positions of the precision mask and the substrate to be processed, including:
  • the substrate for debugging includes a substrate and a photochromic layer and an anode film layer disposed on the substrate, and one of the photochromic layer and the anode film layer Pre-patterned;
  • the light source in the debugging vapor deposition chamber is turned on, and the light on the debugging substrate is irradiated through the precision mask a color changing layer in which a portion of the photochromic layer irradiated with the irradiated light is discolored;
  • an evaporation machine comprising a plurality of working vapor deposition chambers and at least one debugging evaporation chamber, wherein the debugging evaporation chamber Obtaining a compensation value for obtaining a precision mask for the vapor deposition machine to adjust a relative position of the precision mask in the vapor working chamber of the normal operation and a substrate to be processed, the steaming for debugging
  • the debugging method for obtaining the compensation value of the precision mask by the plating chamber includes:
  • the substrate for debugging includes a substrate and a photochromic layer and an anode film layer disposed on the substrate, the photochromic layer and the anode film layer One of which is pre-patterned;
  • the precision mask comprises a light transmitting region and a light shielding region
  • the light source in the debugging vapor deposition chamber is turned on, and the light on the debugging substrate is irradiated through the precision mask a color changing layer in which a portion of the photochromic layer irradiated with the irradiated light is discolored;
  • a compensation value of the precision mask is obtained according to a position of a partial region in the photochromic layer where discoloration occurs.
  • the present invention obtains the compensation value of the precision mask by the position of the partial region where the photochromic layer is discolored in the substrate for debugging, and further the vapor deposition machine according to the compensation
  • the value adjusts the relative position of the precision mask to the substrate to be processed.
  • the above method can replace the traditional evaporation organic material to obtain the compensation value of the precision mask. By this method, expensive organic materials can be omitted in the adjustment process. And speed up debugging.
  • FIG. 1 is a schematic view of a debugging substrate and a precision mask in a debugging process in the prior art
  • FIG. 2 is a schematic structural view of an embodiment of an evaporation machine in the prior art
  • FIG. 3 is a schematic flow chart of an embodiment of a debugging method of the present invention.
  • FIG. 4 is a schematic diagram of the debugging method of FIG. 3 in the debugging process of the debugging substrate and the precision mask in an application scenario;
  • FIG. 5 is a schematic diagram of the debugging method of the debugging method of FIG. 3 in another debugging scenario of the debugging substrate and the precision mask;
  • Figure 6 is a schematic view showing the structure of an embodiment of the vapor deposition machine of the present invention.
  • Fig. 7 is a partial structural schematic view showing an embodiment of the vapor deposition chamber for debugging in Fig. 6.
  • FIG. 1 is a schematic diagram of a debugging substrate and a precision mask in a debugging process according to the prior art.
  • the substrate for debugging includes: a substrate 101 , a buffer layer 102 , a metal layer 103 , an anode film layer 104 , and a photoresist Layer 105.
  • the substrate 101 is a substrate having a two-layer structure of a glass substrate, a glass substrate, or a polyimide film.
  • the material of the buffer layer 102 is silicon nitride or silicon oxide.
  • the buffer layer 102 may be more than one layer, and may be two layers.
  • the buffer layer 102 is schematically illustrated in FIG.
  • the metal layer 103 is a metal thin molybdenum layer or a multi-layered thin film layer formed of a plurality of metals for forming a alignment mark of the substrate for debugging.
  • the anode film layer 104 is a multi-layered structure formed of indium tin oxide or metallic silver.
  • the anode film layer 104 undergoes a process of coating, baking, exposing, developing, etching, cleaning, etc. to form an anode pattern corresponding to the sub-pixel.
  • the photoresist layer 105 undergoes processes such as exposure, development, and baking, on which an opening 106 defining an anode pattern to be formed by the anode film layer 104 is formed, the opening 106 being in the same position as the anode pattern to be formed by the anode film layer 104.
  • the precision mask 107 When the precision mask is placed in the vapor deposition chamber in the vapor deposition machine, the precision mask 107 is aligned with the substrate for debugging, and a schematic view as shown in FIG. 1 is formed.
  • the lower organic material is evaporated by heat to form a material molecular gas stream 108 upward, and a thin film pattern is formed on the debugging substrate through the precision mask 107.
  • Case 109 Theoretically, the exposed anode pattern of the open region 106 on the photoresist layer 105 should be in the middle of the grown film pattern 109, but in practice, the thin film pattern 109 may be locally offset due to fabrication errors of the precision mask.
  • OLED display panels usually include three sub-pixels of red (R), green (G), and blue (B) light. Therefore, in the process of preparing an OLED display panel, three types of precision masks are needed, different colors. The sub-pixels correspond to different precision masks.
  • the precision mask corresponding to the debug substrate and a sub-pixel (for example, a red photo sub-pixel) is loaded into the vapor deposition chamber of the vapor deposition machine, and a thin film pattern is deposited on the anode pattern corresponding to the sub-pixel, and the actual thin film pattern is formed. It will fall near the anode pattern of the sub-pixel, and measure the distance between the four sides of the thin film pattern from the four sides of the anode pattern of the sub-pixel. According to the measurement data, the compensation value of the sub-pixel corresponding to the precision mask is measured by a certain algorithm.
  • the compensation value is input into the vapor deposition machine, a new debugging substrate is replaced, the film is formed again, and the distance between the film pattern and the four sides of the sub-pixel anode pattern is measured, and it is judged again whether the anode pattern falls in the middle position of the film pattern. If the anode pattern falls at the intermediate position of the film pattern at this time, the compensation of the position of the precision mask is ended, otherwise the new substrate for debugging is continuously replaced and vapor-deposited until the anode pattern falls in the middle of the film pattern.
  • the precision mask corresponding to the other sub-pixels (for example, the R sub-pixel or the B-sub-pixel) is replaced to compensate for the precision mask corresponding to the three sub-pixels.
  • the autoclave can be fully automated and mass-produced, producing a color screen, and ensuring that the screen produced does not have a color mixing effect.
  • FIG. 2 is a schematic structural view of an embodiment of a conventional vapor deposition machine.
  • the substrate to be processed (not shown) or the substrate for vapor deposition (not shown) is input from the cleaning machine port P1 and undergoes multiple cleaning.
  • the unit (described in Unit 2, Unit2, Unit3, Unit44 cleaning unit in Figure 2) enters the baking unit A, and then cools in the B chamber, and then the substrate to be processed or the substrate for vapor deposition realizes environmental conversion in the L1 cavity.
  • the atmospheric environment is converted to a vacuum environment, and all chambers are in a vacuum after the L1 cavity.
  • the chambers 1-1 to 1-5 and 2-1 to 2-5 are vapor deposition chambers, some of the chambers are loaded with precision masks, and S1-1 and S2-1 are precision mask loading chambers.
  • a precision type mask corresponding to a red photon pixel is mounted in the vapor deposition chamber 1-2 as an example.
  • the precision mask corresponding to the red photon pixel is transferred from the S1-1 to the vapor deposition chamber 1-2 through the robot arm, and the debugging substrate is put in from the P1 port, subjected to cleaning, baking and cooling, and enters the vacuum environment after passing through the L1 cavity.
  • the robot arm transfers the debugging substrate to the vapor deposition chamber 1-2, and then the coating compensation compensation of the red photo sub-pixel precision mask is started.
  • the debugging substrate is exited through S1-1, and the external measurement and debugging is performed.
  • the compensation value of the precision mask corresponding to the red sub-pixel is calculated, and then the debugging is performed again.
  • the compensation mask corresponding to the green photo sub-pixel and the blue sub-pixel is compensated and debugged according to the above steps until the precision mask corresponding to the three sub-pixels The board is fully compensated.
  • Waste film-forming material The above-mentioned compensation debugging method must use an evaporation film-forming material (usually an organic material), and each precision mask must be debugged with 3-5 pieces of debugging substrate to complete the debugging work. For a product, in the process of debugging, it is necessary to use 27 to 75 debugging substrates, which wastes the film forming material, and the film forming material is expensive.
  • an evaporation film-forming material usually an organic material
  • each vapor deposition machine has 3 to 5 evaporation chambers, and the above-mentioned method is used to compensate and debug the precision mask, which must occupy the red, green and blue evaporation chambers.
  • the entire product line cannot be subjected to normal product operation, and the vapor deposition machine must wait for the compensation of the precision mask to complete the normal manufacturing operation.
  • the present invention provides a debugging method and an evaporation machine.
  • the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It is obvious that the described embodiments are only It is a part of the embodiments of the invention, not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without departing from the inventive scope are the scope of the present invention.
  • FIG. 3 is a schematic flow chart of an embodiment of a debugging method according to the present invention.
  • the method is used for adjusting a relative position of a precision mask to a substrate to be processed, including:
  • the substrate for debugging comprises a substrate and a photochromic layer and an anode film layer disposed on the substrate, and one of the photochromic layer and the anode film layer is pre-patterned .
  • the patterned photochromic layer 405 is disposed over the anode film layer 404.
  • the substrate for debugging further includes: a substrate 401, a buffer layer 402, and a metal layer 403, wherein the substrate 401, the buffer layer 402, and the metal layer 403 are combined with a common debugging substrate.
  • the substrate 101, the buffer layer 102, and the metal layer 103 are the same or similar, and are not described herein again. For details, refer to the above description.
  • the patterned photochromic layer 405 is disposed on the anode film layer 404, specifically: the patterned photochromic layer 405 is disposed on a side of the anode film layer 404 away from the substrate 401.
  • the photochromic layer 405 is subjected to a coating, baking, exposing, developing, etc. process to produce an opening 406 defining an anode pattern to be formed by the anode film layer 404.
  • the opening 406 is positioned the same as the anode pattern that the anode film layer 404 needs to form.
  • the photochromic layer 405 is formed of a photochromic material or is a photoresist layer containing a photochromic material.
  • the photochromic material is first doped into the chemical solution of the photoresist layer, and then the liquid coating method is applied (of course, physical use is also possible. Vapor deposition, chemical vapor deposition, spray coating, dip coating, dipping-spin coating, and other known methods) form a thin film layer, and then undergo baking, exposure, development, and the like to form an anode pattern to be formed to define the anode film layer 404.
  • Opening 406 when the photochromic layer 405 is formed of a photochromic material, the photochromic material is first formed into a stable solution, and then the liquid coating method is applied (of course, physical vapor deposition, chemical vapor deposition, A film layer is formed by a spray coating method, a dip coating method, a dipping-spin coating method, or the like, and then subjected to baking, exposure, development, and the like to form an opening 406 defining an anode pattern to be formed in the anode film layer 404.
  • the liquid coating method of course, physical vapor deposition, chemical vapor deposition, A film layer is formed by a spray coating method, a dip coating method, a dipping-spin coating method, or the like, and then subjected to baking, exposure, development, and the like to form an opening 406 defining an anode pattern to be formed in the anode film layer 404.
  • the photochromic material comprises at least one of an inorganic photochromic material and an organic photochromic material
  • the photochromic material may be an inorganic photochromic material, or an organic photochromic material, or both inorganic light
  • the color changing material in turn includes an organic photochromic material.
  • the inorganic photochromic material may be molybdenum oxide, titanium oxide, calcium iodide, mercury iodide, copper chloride, silver chloride, etc.
  • the organic photochromic material may be a chromene compound, a spiropyran, a spiro
  • a known organic photochromic material such as a azine, a stilbene, an aromatic azo compound, a dipyridamole, a spiro dihydroxy phthalocyanine, a triarylmethane, a diarylethene or an azobenzene.
  • the photochromic material in order to improve the color forming concentration, the initial coloring, the control of the fading speed, the film forming property, and the like, is added with a surfactant, an antioxidant, an ultraviolet absorber, and a viscosity modifier.
  • a surfactant an antioxidant, an ultraviolet absorber, and a viscosity modifier.
  • other additives may also be added, indicating that it is desirable that the known compounds can be used without limitation in the added additives.
  • the photochromic layer 405 needs to undergo five processes of coating, baking, exposing, developing, and baking to form the structure shown in FIG. 4, and the photochromic layer 405 contains photochromism. Material, so every step needs to be adjusted and verified, the operation is more troublesome, the raw substrate for debugging
  • the anode film layer 505 on the substrate for debugging is pre-patterned, the pattern is changed.
  • the anode film layer 505 is disposed over the photochromic layer 504.
  • the substrate for debugging further includes: a substrate 501, a buffer layer 502, and a metal layer 503, wherein the substrate 501, the buffer layer 502, and the metal layer 503 are combined with the substrate 101 and the buffer layer of a common debugging substrate.
  • 102 and the metal layer 103 are the same or similar, and are not described herein again. For details, refer to the above description.
  • the patterned anode film layer 505 is disposed on the photochromic layer 504, specifically: the patterned anode film layer 505 is disposed on a side of the photochromic layer 504 away from the substrate 501.
  • the photochromic layer 504 is a complete film, which can be formed only by two processes of coating and baking. Compared with the above application scenario, in the application scenario, the photochromic layer 504 can be The number of processes is reduced from 5 to 2, which can effectively reduce costs and save time.
  • the anode film layer 505 is pre-patterned to form a plurality of anode patterns 5051.
  • the plurality of anode patterns 5051 are identical in size and position to the openings 406 in the application scenario described above.
  • the anode film layer 404 and the anode film layer 505 may be a multilayer film formed of indium tin oxide and metallic silver.
  • the anode film layer 505 can be a common metal film layer, such as a metal molybdenum film layer, and of course, other metal material layers, which are not limited herein.
  • the precision mask includes a light transmitting region and a light blocking region, so that the illumination light can be irradiated onto the photochromic layer of the substrate for debugging through the light transmitting region.
  • the precision mask 407 includes a light-shielding region 4071 and a light-transmitting region 4072.
  • the precision mask 507 includes a light-shielding region 5071 and a light-transmitting region 5072.
  • the light-emitting chamber for debugging includes a light source capable of discoloring a portion of the photochromic layer that is irradiated.
  • the light source may be an ultraviolet lamp capable of emitting ultraviolet light, but The wavelength of the ultraviolet light is not limited.
  • the light source can be capable of making light Any source that discolors the discoloration layer.
  • the light source in the vapor deposition chamber for debugging When the light source in the vapor deposition chamber for debugging is turned on, light emitted from the light source can pass through the light-transmitting region of the precision mask to be irradiated on the photochromic layer, and a portion of the photochromic layer that is irradiated is discolored.
  • the illumination light 408 emitted by the light source (not shown in FIG. 4) is incident on the patterned photochromic layer 405 through the light transmissive region 4072 of the precision mask 407 to make the light
  • the discoloration layer 405 is discolored according to the partial region 4051 in the light transmissive region 4072 of the precision mask 407. At this time, as shown in FIG.
  • the partial region 4051 in which the discoloration phenomenon occurs in the photochromic layer 405 is a precise type.
  • the area between the edge of the light transmissive area 4072 of the mask 408 to the edge of the patterned photochromic layer 405; in the application scenario of FIG. 5, the illumination light 508 emitted by the light source (not shown in FIG. 5) is precise.
  • the light-transmissive region 5072 and the patterned anode film layer 505 in the type mask 507 are irradiated onto the photochromic layer 504 to cause discoloration of the partial region 5041 in the photochromic layer 504.
  • the partial region 5041 in which the discoloration phenomenon occurs in the photochromic layer 504 is a region between the edge of the light-transmitting region 5072 of the precision type mask 507 to the edge of the patterned anode film layer 505.
  • S304 Obtain a compensation value of the precision mask according to a position of a partial region where the color change occurs in the photochromic layer, wherein the compensation value is used for adjusting the relative position of the precision mask to the substrate to be processed by the vaporizer .
  • step S303 the distance between the partial region 4051 of the photochromic layer 405 and the four sides of the opening 406 is measured, and the corresponding precision mask is calculated by a certain algorithm.
  • the compensation value of the vapor deposition machine adjusts the relative position of the precision mask to the substrate to be processed according to the compensation value; in the application scenario of FIG. 5, after step S303, the partial region where the color change occurs in the photochromic layer 504 is measured.
  • the distance between the 5041 and the four sides of the anode pattern 5051 is calculated by a certain algorithm to calculate the compensation value of the corresponding precision mask, and the vapor deposition machine adjusts the relative position of the mask for vapor deposition and the substrate to be processed according to the compensation value.
  • the adjusting the relative position of the precision mask to the substrate to be processed according to the compensation value comprises: when the compensation value does not exceed a preset threshold, the vapor deposition machine adjusts the precision according to the compensation value.
  • the preset threshold can be obtained by the technician based on the experiment or a large amount of data. In principle, when the acquired compensation value does not exceed the preset threshold, the mixed display panel is illuminated and no color mixing effect occurs. .
  • discoloration occurs in the photochromic layer in the substrate for debugging
  • the position of the partial region obtains the compensation value of the precision mask, and the vapor deposition machine adjusts the relative position of the precision mask to the substrate to be processed according to the compensation value.
  • the vapor deposition is not required during the debugging process.
  • the organic film pattern is formed, so that the material can be saved during the adjustment process and the debugging speed can be accelerated.
  • FIG. 6 is a schematic structural view of an embodiment of the vapor deposition machine of the present invention.
  • the vapor deposition machine 600 includes a plurality of normal working vapor deposition chambers 601 and at least one steaming for debugging.
  • the vapor deposition chamber 601 which is normally operated refers to the vapor deposition chamber of the vapor deposition chamber and the vapor deposition chamber of the ordinary vapor deposition machine, for example, the vapor deposition chambers 1-1 to 1-5 and 2-1 to 2-5 in FIG. Traditional evaporation function. It should be noted that there is no limitation on the number of the vapor deposition chambers 601 that are normally operated, and the relative positions of the vapor deposition chambers 602 for debugging and the vapor deposition chambers 601 that are normally operated are not limited.
  • FIG. 7 is a partial structural diagram of an embodiment of the vapor deposition chamber for debugging in FIG. 6.
  • At least one light source is disposed in the vapor deposition chamber for debugging, and the number of light sources is four in FIG. Description, that is, the light source 701, the light source 703, the light source 705, and the light source 707 in FIG.
  • the light source 701, the light source 703, the light source 705, and the light source 707 are disposed in a lower portion of the cavity of the vapor deposition chamber for debugging, and a precision mask is disposed in the vapor deposition chamber for debugging and the alignment substrate is aligned for alignment.
  • the system (not shown in Fig.
  • the upper photochromic layer is irradiated with the illumination light emitted from the light source 701, the light source 703, the light source 705, and the light source 707, and the photochromic layer is irradiated by a portion of the region irradiated with the illumination light, thereby depending on the partial region where the discoloration occurs in the photochromic layer.
  • At least one material evaporation source is further disposed in the vapor deposition chamber for debugging, and the number of material evaporation sources is four in FIG. 7 , that is, the material evaporation source 702 and the material evaporation source. 704, a material evaporation source 706 and a material evaporation source 708, so that the debugging vapor deposition chamber further has a conventional evaporation function, that is, when the precision mask is not required to be compensated and debugged, the debugging evaporation chamber can also be used.
  • the working substrate is subjected to a vapor deposition operation.
  • the number and positional relationship of the light source and the material evaporation source are not limited, and only a schematic explanation is given in FIG. 7, and the relative positional relationship in FIG. 7 is not limited.
  • there is no limitation on the types of light source and material evaporation source as long as the light source and the material evaporation source can emit the required illumination light.
  • the vapor deposition machine includes a plurality of normal working vapor deposition chambers and at least one debugging vapor deposition chamber, and a plurality of normal working vapor deposition chambers and debugging vapor deposition chambers are performed when the working substrate is normally processed.
  • the substrate can be coated on the working substrate.
  • the vapor deposition machine can be switched to the semi-automatic mode.
  • the normal working vapor deposition chamber is coated with the working substrate, and the debugging is performed by using the vapor deposition chamber.
  • the compensation value of the type mask is not interfered with each other, it will not affect the operation of the normal evaporation line, and the equipment utilization rate will be improved, which will help to reduce the production cost.

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Abstract

一种调试方法及蒸镀机，调试方法用于调整精密型掩膜板与待作业基板的相对位置，包括：装载调试用基板至调试用蒸镀腔内；装载精密型掩膜板至调试用蒸镀腔内；开启调试用蒸镀腔内的光源并通过精密型掩膜板而照射调试用基板上的光致变色层，其中，光致变色层中被照射光照射的部分区域发生变色；根据光致变色层中发生变色的部分区域的位置，而获取精密型掩膜板的补偿值。在调整时可以省去有机材料，提高调试速度。

Description

一种调试方法及蒸镀机 【技术领域】
本发明涉及显示技术领域，特别是涉及一种调试方法及蒸镀机。
【背景技术】
有机发光二极管(Organic Light Emitting Diode，OLED)显示面板具有主动发光、亮度高、对比度高、超薄、功耗低、视角大以及工作温度范围宽等诸多优点，是一种具有广泛应用的新型平板显示装置。
在制备OLED显示面板的过程中，需要采用真空蒸镀技术制备OLED薄膜，具体地，在真空环境中加热有机材料，使得有机材料受热升华，通过具有图案的精密型掩膜板，在基板子像素对应的阳极图案上形成具有一定形状的有机薄膜(也称为发光层)，其中，不同颜色的子像素对应不同的精密型掩膜板，每种颜色的子像素都需要一张精密型掩膜板。经历多种材料的连续沉积成膜，即可形成具有多层薄膜结构的OLED结构。目前精密型掩膜板与待作业基板进行对位时，对位精度通常可以控制在＜±3μm范围内，但是即使对位达到规格，实际沉积在子像素阳极图案之上的有机薄膜位置也会发生偏移，当子像素阳极图案上的有机薄膜或金属薄膜发生偏移时，在显示面板被点亮后，容易发生混色效应，因此在全自动生产前，都要对精密型掩膜板的位置进行补偿，使得蒸镀成膜后，成膜图案覆盖在子像素阳极图案上，并且阳极图案位于成膜图案的中央。
现有的调整精密型掩膜板成膜图案位置的方法，浪费较多的成膜材料，且调试速度较慢。
【发明内容】
本发明主要解决的技术问题是提供一种调整精密型掩膜板与待作业基板的相对位置的调试方法，能够在调整精密型掩膜板与待作业基板的相对位置的过程中省去有机材料，并且提高调试速度。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种调试方法，用于调整精密型掩膜板与待作业基板的相对位置，包括：
装载调试用基板至调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板包括透光区和遮光区；
所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值，其中，所述补偿值用于供蒸镀机调整所述精密型掩膜板与所述待作业基板的相对位置，
其中，当所述调试用基板上的所述光致变色层被预先图案化时，图案化的所述光致变色层设置在所述阳极薄膜层之上，所述开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域；
当所述调试用基板上的所述阳极薄膜层被预先图案化时，图案化的所述阳极薄膜层设置在所述光致变色层之上，所述开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种调试方法，用于调整精密型掩膜板与待作业基板的相对位置，包括：
装载调试用基板至调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板 包括透光区和遮光区；
所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值，其中，所述补偿值用于供蒸镀机调整所述精密型掩膜板与所述待作业基板的相对位置。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种蒸镀机，包括多个正常工作的蒸镀腔和至少一个调试用蒸镀腔，其中，所述调试用蒸镀腔用于获取精密型掩膜板的补偿值以供所述蒸镀机调整在所述正常工作的蒸镀腔内的所述精密型掩膜板与待作业基板的相对位置，所述调试用蒸镀腔获取所述精密型掩膜板的补偿值的调试方法包括：
装载调试用基板至所述调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板包括透光区和遮光区；
所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值。
本发明的有益效果是：区别于现有技术的情况，本发明通过调试用基板中光致变色层发生变色的部分区域的位置获取精密型掩膜板的补偿值，进而蒸镀机根据该补偿值调整精密型掩膜板与待作业基板的相对位置，上述方法可以替代传统的蒸发有机材料获取精密型掩膜板补偿值的方法，通过该方法能够在调整过程中省去昂贵的有机材料，并且加快调试速度。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中：
图1是普通技术中调试用基板与精密型掩膜板在调试过程中的示意图；
图2是普通技术中蒸镀机一实施方式的结构示意图；
图3是本发明调试方法一实施方式的流程示意图；
图4是图3中的调试方法在一应用场景下调试用基板与精密型掩膜板在调试过程中的示意图；
图5是图3中的调试方法在另一应用场景下调试用基板与精密型掩膜板在调试过程中的示意图；
图6是本发明蒸镀机一实施方式的结构示意图；
图7是图6中调试用蒸镀腔一实施方式的部分结构示意图。
【具体实施方式】
参阅图1，图1是普通技术中调试用基板与精密型掩膜板在调试过程中的示意图，该调试用基板包括：基板101、缓冲层102、金属层103、阳极薄膜层104以及光阻层105。
基板101为玻璃基板或玻璃基板、聚酰亚胺薄膜的双层结构的基板。缓冲层102的材料为硅的氮化物或者硅的氧化物，其中，缓冲层102可以不止一层，可以为2层，在图1中以缓冲层102为一层进行示意说明。金属层103为金属钼层或多种金属形成的多层状薄膜层，用于形成调试用基板的对位标。阳极薄膜层104为氧化铟锡、金属银形成的多层结构，通常情况下，阳极薄膜层104经历涂胶、烘烤、曝光、显影、蚀刻、清洗等制程形成子像素对应的阳极图案。光阻层105经历曝光、显影和烘烤等制程，其上形成限定阳极薄膜层104需要形成的阳极图案的开口106，开口106与阳极薄膜层104需要形成的阳极图案位置一致。
当精密型掩膜板放入蒸镀机中的蒸镀腔内时，精密型掩膜板107与该调试用基板对位贴合，形成如图1所示的示意图。下部的有机材料经过受热蒸发，向上形成材料分子气流108，经过精密型掩膜板107在调试用基板上形成薄膜图 案109。理论上，光阻层105上开口区106暴露的阳极图案应该在生长形成的薄膜图案109的中间位置，但在实际情况中，因精密型掩膜板制作误差，薄膜图案109会局部偏移。
目前，OLED显示面板中通常包括红(R)、绿(G)、蓝(B)光三种子像素，因此在制备OLED显示面板的过程中，需要使用到三种精密型掩膜板，不同颜色的子像素对应不同的精密型掩膜板。
且通常情况下采用以下方法对精密型掩膜板的位置进行补偿：
将调试用基板和一子像素(例如红光子像素)对应的精密型掩膜板装载到蒸镀机的蒸镀腔内，在该子像素对应的阳极图案上沉积一层薄膜图案，实际薄膜图案会落在该子像素阳极图案附近，测量薄膜图案四条边距离该子像素阳极图案四条边的距离，依据测量数据，经过一定算法测量出该子像素对应精密型掩膜板的补偿值，将该补偿值输入蒸镀机内，更换一张新的调试用基板，再次成膜，并测量薄膜图案距离子像素阳极图案四条边的距离，再次判断阳极图案是否落在薄膜图案的中间位置。如果此时阳极图案落在薄膜图案的中间位置，则结束对精密型掩膜板位置的补偿，否则继续更换新的调试用基板进行蒸镀成膜直至阳极图案落在薄膜图案的中间位置。当该子像素对应的精密型掩膜板补偿结束后，更换其他子像素(例如R子像素或B子像素)对应的精密型掩膜板进行补偿，直至三种子像素对应的精密型掩膜板完全补偿结束，蒸镀机才能全自动大量生产作业，制作出彩色屏幕，且保证制作的屏幕不会发生混色效应。
参阅图2，图2是一种普通的蒸镀机一实施方式的结构示意图，待作业基板(图未示)或蒸镀用基板(图未示)从清洗机端口P1投入，经历多个清洗单元(图2中以Unit1、Unit2、Unit3、Unit44个清洗单元进行说明)后进入烘烤单元A，然后在B腔冷却，接着待作业基板或蒸镀用基板在L1腔内实现环境转换，从大气环境转换为真空环境，L1腔之后所有腔体均处于真空状态。其中，1-1～1-5、2-1～2-5腔为蒸镀腔，部分腔体装载有精密型掩膜板，S1-1、S2-1为精密型掩膜板装载腔。
下面以蒸镀腔1-2装载红光子像素对应的精密型掩膜板为例进行说明。
红光子像素对应的精密型掩膜板从S1-1通过机械手臂转移到蒸镀腔1-2，调试用基板从P1口投入，经历清洗、烘烤以及冷却，经过L1腔后进入真空环境，机械手臂把调试用基板传送到蒸镀腔1-2内，才开始红光子像素精密型掩膜板的镀膜补偿调试，调试完毕后，调试用基板通过S1-1退出，在外部测量调试 用基板表面图案后，计算红光子像素对应的精密型掩膜板的补偿值，然后再次进行调试。当对红光子像素对应的精密型掩膜板进行补偿调试后，再次按照上述步骤对绿光子像素、蓝光子像素对应的精密型掩膜板进行补偿调试，直至三种子像素对应的精密型掩膜板全部补偿结束。
本申请的发明人在长期的研究中，发现上述的补偿调试方法存在以下几个缺点：
(1)浪费成膜材料：上述的补偿调试方法中必须使用蒸镀成膜材料(通常为有机材料)，而且每张精密型掩膜板必须调试3-5片调试用基板才能完成调试工作，对于一款产品来说，在调试的过程中，大概需要使用27～75片调试用基板，从而会浪费成膜材料，且成膜材料价格昂贵。
(2)调试速度慢：在调试的过程中，需要经历材料升温、速率稳定、蒸镀成膜、膜图案测量、计算等几个过程，对于一款产品来说，补偿调试精密型掩膜板需要消耗400～1000分钟。
(3)占用蒸镀机的蒸镀腔：每台蒸镀机有3～5个蒸镀腔，采用上述方法补偿调试精密型掩膜板，必须占用红光、绿光、蓝光蒸镀腔，使得蒸镀整条产线无法进行正常产品作业，蒸镀机必须等待精密型掩膜板补偿调试作业结束后才能开始正常制造作业。
因此，本发明提供了一种调试方法及蒸镀机，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参阅图3，图3是本发明调试方法一实施方式的流程示意图，该方法用于调整精密型掩膜板与待作业基板的相对位置，包括：
S301：装载调试用基板至调试用蒸镀腔内，其中，调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，光致变色层和阳极薄膜层之一被预先图案化。
参阅图4，在本实施方式的一个应用场景中，当调试用基板上的光致变色层405被预先图案化时，图案化的光致变色层405设置在阳极薄膜层404之上。
可选地，在本应用场景下，调试用基板还包括：基板401、缓冲层402、金属层403，其中，基板401、缓冲层402以及金属层403与常见的调试用基板的 基板101、缓冲层102以及金属层103对应相同或相似，在此不再赘述，详见上述说明。
其中，图案化的光致变色层405设置在阳极薄膜层404之上具体指的是：图案化的光致变色层405设置在阳极薄膜层404远离基板401的一侧。光致变色层405经历涂布、烘烤、曝光、显影等制程制作出限定阳极薄膜层404需要形成的阳极图案的开口406，开口406与阳极薄膜层404需要形成的阳极图案位置相同。
可选地，光致变色层405由光致变色材料形成或者为含有光致变色材料的光阻层。当光致变色层405为含有光致变色材料的光阻层时，首先将光致变色材料掺杂到光阻层的化学药液中，然后采用药液旋转涂布法(当然也可采用物理气相沉积、化学气相沉积、喷涂法、浸涂法、浸渍-旋涂法等其他公知方法)形成薄膜层，然后经历烘烤、曝光、显影等制程制作出限定阳极薄膜层404需要形成的阳极图案的开口406；当光致变色层405由光致变色材料形成时，首先将光致变色材料形成稳定的溶液，然后采用药液旋转涂布法(当然也可采用物理气相沉积、化学气相沉积、喷涂法、浸涂法、浸渍-旋涂法等其他公知方法)形成薄膜层，然后经历烘烤、曝光、显影等制程制作出限定阳极薄膜层404需要形成的阳极图案的开口406。
其中，光致变色材料包括无机光致变色材料、有机光致变色材料中的至少一种，例如光致变色材料可以为无机光致变色材料，或者有机光致变色材料，或者既包括无机光致变色材料又包括有机光致变色材料。具体地，无机光致变色材料可以为氧化钼、氧化钛、碘化钙、碘化汞、氯化铜、氯化银等，有机光致变色材料可以为色烯化合物、螺吡喃、螺噁嗪、二苯乙烯、芳族偶氮化合物、双咪咗、螺二羟基吲哚林、三芳基甲烷、二芳基乙烯类、偶氮苯类等已经公知的有机光致变色材料。可选地，在该应用场景中，为了改善成色浓度，初始着色、控制褪色速度、制膜特性等，光致变色材料内添加有界面活性剂、抗氧化剂、紫外线吸收剂和粘度改善剂中的至少一种，当然在其他应用场景中，还可以添加其他添加剂，说明需要的是，添加的这些添加剂中可以无限制地使用公知化合物。
在上述应用场景中，光致变色层405需要经历涂布、烘烤、曝光、显影、烘烤5个制程才能形成图4中所示的结构，而由于光致变色层405中含有光致变色材料，因此每一步都需要调整与验证，操作较为麻烦，对调试用基板的生 产制程改动较大，不利于引入生产制程，因此为了改善这种缺点，参阅图5，在本实施方式的另一个应用场景中，调试用基板上的阳极薄膜层505被预先图案化时，图案化的阳极薄膜层505设置在光致变色层504之上。
同样的，在本应用场景中，调试用基板还包括：基板501、缓冲层502、金属层503，其中，基板501、缓冲层502以及金属层503与常见的调试用基板的基板101、缓冲层102以及金属层103对应相同或相似，在此不再赘述，详见上述说明。
其中，图案化的阳极薄膜层505设置在光致变色层504之上具体指的是：图案化的阳极薄膜层505设置在光致变色层504远离基板501的一侧。此时光致变色层504为完整的一层薄膜，只需经历涂布、烘烤2个制程就可以形成，相比较于上述的应用场景，在本应用场景中，可以将光致变色层504的制程由5个减少到2个，能够有效降低成本、节省时间。
在本应用场景中，阳极薄膜层505被预先图案化，形成多个阳极图案5051。在本应用场景中，多个阳极图案5051与上述应用场景中开口406大小和位置一致。
在上述两个应用场景中，阳极薄膜层404和阳极薄膜层505可以为氧化铟锡和金属银形成的多层薄膜，可选地，为了进一步降低成本，在其他实施方式中，阳极薄膜层404和阳极薄膜层505可以为普通的金属薄膜层，例如金属钼薄膜层，当然也可以为其他金属材料层，在此不做限制。
S302：装载精密型掩膜板至调试用蒸镀腔内，其中，精密型掩膜板包括透光区和遮光区。
精密型掩膜板包括透光区以及遮光区，以进而照射光能够穿过透光区照射在调试用基板的光致变色层上。例如，在图4的应用场景中，精密型掩膜板407包括遮光区4071以及透光区4072，在图5的应用场景中，精密型掩膜板507包括遮光区5071以及透光区5072。
S303：精密型掩膜板与调试用基板对位后，开启调试用蒸镀腔内的光源并通过精密型掩膜板而照射调试用基板上的光致变色层，其中，光致变色层中被照射光照射的部分区域发生变色。
调试用蒸镀腔内包括光源，该光源能够使光致变色层被照射的部分区域发生变色，可选地，在本实施方式中该光源可以是紫外灯，能够发出紫外光，但在此对紫外光的波长不做限制。当然在其他实施方式中，光源可以是能够使光 致变色层发生变色的任何光源。
当开启调试用蒸镀腔内的光源后，光源发出的光能够穿过精密型掩膜板的透光区而照射在光致变色层上，光致变色层被照射的部分区域发生变色。例如，在图4的应用场景中，光源(图4未示)发出的照射光408穿过精密型掩膜板407的透光区4072照射在图案化的光致变色层405上，以使光致变色层405对应精密型掩膜板407的透光区4072内的部分区域4051发生变色现象，此时，如图4所示，光致变色层405中发生变色现象的部分区域4051为精密型掩膜板408的透光区4072的边缘处至图案化的光致变色层405的边缘处之间的区域；在图5的应用场景中，光源(图5未示)发出的照射光508精密型掩膜板507中的透光区5072和图案化的阳极薄膜层505而照射至光致变色层504上，以使得光致变色层504中的部分区域5041发生变色现象，此时，如图5所示，光致变色层504中发生变色现象的部分区域5041为精密型掩膜板507的透光区5072的边缘处至图案化的阳极薄膜层505的边缘处之间的区域。
S304：根据光致变色层中发生变色的部分区域的位置，而获取精密型掩膜板的补偿值，其中，补偿值用于供蒸镀机调整精密型掩膜板与待作业基板的相对位置。
具体地，在图4的应用场景中，在步骤S303之后，测量光致变色层405中发生变色的部分区域4051与开口406四条边的距离，进而经过一定算法计算出对应的精密型掩膜板的补偿值，蒸镀机根据该补偿值调整精密型掩膜板与待作业基板的相对位置；在图5的应用场景中，在步骤S303之后，测量光致变色层504中发生变色的部分区域5041与阳极图案5051四条边的距离，经过一定算法计算出对应的精密型掩膜板的补偿值，蒸镀机根据该补偿值调整蒸镀用掩膜版与待作业基板的相对位置。
其中，可选地，蒸镀机根据该补偿值调整精密型掩膜板与待作业基板的相对位置具体包括：当该补偿值不超过预设阈值时，蒸镀机根据该补偿值调整精密型掩膜板与待作业基板的相对位置；当该补偿值超过预设阈值时，重复步骤S301至S303直至获取的补偿值不再超过预设阈值，以进而保证制作出的显示面板在被点亮后不会发生混色效应，其中，预设阈值可由技术人员根据实验或大量数据得出，原则上当获取的补偿值不超过预设阈值时，制作出的显示面板被点亮后不会发生混色效应。
在上述调试方法的实施方式中，通过调试用基板中光致变色层发生变色的 部分区域的位置获取精密型掩膜板的补偿值，进而蒸镀机根据该补偿值调整精密型掩膜板与待作业基板的相对位置，相比较于现有技术，无需在调试过程中蒸镀形成有机薄膜图案，因此通过该方法能够在调整过程中节省材料，加快调试速度。
同时本申请还提供一种蒸镀机，参阅图6，图6是本发明蒸镀机一实施方式的结构示意图，蒸镀机600包括多个正常工作的蒸镀腔601和至少一个调试用蒸镀腔602，其中，调试用蒸镀腔602用于获取精密型掩膜板的补偿值以供蒸镀机调整在正常工作的蒸镀腔601内的精密型掩膜板与待作业基板的相对位置。
正常工作的蒸镀腔601指的是该蒸镀腔与普通蒸镀机的蒸镀腔，例如图2中的蒸镀腔1-1～1-5、2-1～2-5相同，具备传统的蒸镀功能。需要说明的是，在此对正常工作的蒸镀腔601的数量不做限制，对调试用蒸镀腔602和正常工作的蒸镀腔601的相对位置也不做限制。
参阅图7，图7是图6中调试用蒸镀腔一实施方式的部分结构示意图，在该调试用蒸镀腔内设有至少一个光源，在图7中以光源的数量为4个进行示意说明，即图7中的光源701、光源703、光源705和光源707。可选地，光源701、光源703、光源705和光源707设置在调试用蒸镀腔的腔体下部，调试用蒸镀腔内设有精密型掩膜板和调试用基板进行对位的对位系统(图7未示)，且调试用蒸镀腔内的上部设有旋转机构(图7未示)。当调试用基板与精密型掩膜板先后被装载到该调试用蒸镀腔内，且调试用基板与精密型掩膜板进行对位后，旋转机构按照一定的速度进行旋转，进而调试用基板上的光致变色层被光源701、光源703、光源705和光源707发出的照射光照射，光致变色层被照射光照射的部分区域发生照射，从而根据光致变色层中发生变色的部分区域的位置，调试用蒸镀腔获取精密型掩膜板的补偿值。其中，调试用蒸镀腔获取精密型掩膜板的补偿值，以进而对调试用基板/待作业基板与精密型掩膜板的位置进行调试的方法与上述任一项实施方式中的调试方法相同或相似，详见可参见上述，在此不再赘述。
可选地，在本实施方式中，调试用蒸镀腔内还设有至少一个材料蒸发源，在图7中以材料蒸发源的数量为4个进行说明，即材料蒸发源702、材料蒸发源704、材料蒸发源706以及材料蒸发源708，以进而使调试用蒸镀腔还具备传统的蒸镀功能，即当不需要对精密型掩膜板进行补偿调试时，调试用蒸镀腔还可以对待作业基板进行蒸镀作业。
需要说明的是，在本实施方式中对光源以及材料蒸发源的数量和位置关系不做限制，在图7中仅是给出了示意说明，并不局限图7中的相对位置关系。同时对光源和材料蒸发源的种类也不做限制，只要光源和材料蒸发源能够发出满足要求的照射光即可。
在本实施方式中，蒸镀机包括多个正常工作的蒸镀腔和至少一个调试用蒸镀腔，在正常对待作业基板进行作业时，多个正常工作的蒸镀腔和调试用蒸镀腔均可以对待作业基板进行镀膜，当需要对精密型掩膜板进行补偿调试时，可以将蒸镀机切换为半自动模式，正常工作的蒸镀腔对待作业基板进行镀膜，调试用蒸镀腔获取精密型掩膜板的补偿值，两者之间互不干扰，不会影响正常蒸镀产线的作业，提高设备使用率，有助于降低生产成本。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (14)

  1. 一种调试方法，用于调整精密型掩膜板与待作业基板的相对位置，其中，包括：
    装载调试用基板至调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
    装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板包括透光区和遮光区；
    所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
    根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值，其中，所述补偿值用于供蒸镀机调整所述精密型掩膜板与所述待作业基板的相对位置，
    其中，当所述调试用基板上的所述光致变色层被预先图案化时，图案化的所述光致变色层设置在所述阳极薄膜层之上，所述开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域；
    当所述调试用基板上的所述阳极薄膜层被预先图案化时，图案化的所述阳极薄膜层设置在所述光致变色层之上，所述开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域。
  2. 根据权利要求1所述的调试方法，其中，所述光致变色层由光致变色材料形成或者为含有光致变色材料的光阻层。
  3. 根据权利要求2所述的调试方法，其中，所述光致变色材料包括无机光致变色材料、有机光致变色材料中的至少一种。
  4. 根据权利要求3所述的调试方法，其中，所述光致变色材料内添加有界面活性剂、抗氧化剂、紫外线吸收剂和粘度改善剂中的至少一种。
  5. 一种调试方法，用于调整精密型掩膜板与待作业基板的相对位置，其中，包括：
    装载调试用基板至调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
    装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板包括透光区和遮光区；
    所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
    根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值，其中，所述补偿值用于供蒸镀机调整所述精密型掩膜板与所述待作业基板的相对位置。
  6. 根据权利要求5所述的调试方法，其中，当所述调试用基板上的所述光致变色层被预先图案化时，图案化的所述光致变色层设置在所述阳极薄膜层之上，其中，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：
    照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域。
  7. 根据权利要求5所述的调试方法，其中，当所述调试用基板上的所述阳极薄膜层被预先图案化时，图案化的所述阳极薄膜层设置在所述光致变色层之上，其中，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：
    照射光穿过所述精密型掩膜板中的所述透光区和图案化的所述阳极薄膜层而照射至所述光致变色层，以使得所述光致变色层中的部分区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述阳极薄膜层的边缘处之间的区域。
  8. 根据权利要求5所述的调试方法，其中，所述光致变色层由光致变色材料形成或者为含有光致变色材料的光阻层。
  9. 根据权利要求8所述的调试方法，其中，所述光致变色材料包括无机光致变色材料、有机光致变色材料中的至少一种。
  10. 根据权利要求9所述的调试方法，其中，所述光致变色材料内添加有界面活性剂、抗氧化剂、紫外线吸收剂和粘度改善剂中的至少一种。
  11. 一种蒸镀机，其中，包括多个正常工作的蒸镀腔和至少一个调试用蒸镀腔，其中，所述调试用蒸镀腔用于获取精密型掩膜板的补偿值以供所述蒸镀机调整在所述正常工作的蒸镀腔内的所述精密型掩膜板与待作业基板的相对位置，所述调试用蒸镀腔获取所述精密型掩膜板的补偿值的调试方法包括：
    装载调试用基板至所述调试用蒸镀腔内，其中，所述调试用基板包括基板以及设置在基板上的光致变色层和阳极薄膜层，所述光致变色层和所述阳极薄膜层之一被预先图案化；
    装载所述精密型掩膜板至所述调试用蒸镀腔内，其中，所述精密型掩膜板包括透光区和遮光区；
    所述精密型掩膜板和所述调试用基板对位后，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层，其中，所述光致变色层中被照射光照射的部分区域发生变色；
    根据所述光致变色层中发生变色的部分区域的位置，而获取所述精密型掩膜板的补偿值。
  12. 根据权利要求11所述的蒸镀机，其中，当所述调试用基板上的所述光致变色层被预先图案化时，图案化的所述光致变色层设置在所述阳极薄膜层之上，其中，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：
    照射光穿过所述精密型掩膜板中的所述透光区而照射至图案化的所述光致变色层，以使得图案化的所述光致变色层中的对应于所述透光区内的区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板 的所述透光区的边缘处至图案化的所述光致变色层的边缘处之间的区域。
  13. 根据权利要求11所述的蒸镀机，其中，当所述调试用基板上的所述阳极薄膜层被预先图案化时，图案化的所述阳极薄膜层设置在所述光致变色层之上，其中，开启所述调试用蒸镀腔内的光源并通过所述精密型掩膜板而照射所述调试用基板上的所述光致变色层的步骤，包括：
    照射光穿过所述精密型掩膜板中的所述透光区和图案化的所述阳极薄膜层而照射至所述光致变色层，以使得所述光致变色层中的部分区域发生变色现象，其中，所述光致变色层中发生变色现象的区域为所述精密型掩膜板的所述透光区的边缘处至图案化的所述阳极薄膜层的边缘处之间的区域。
  14. 根据权利要求11所述的蒸镀机，其中，所述光致变色层由光致变色材料形成或者为含有光致变色材料的光阻层。
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