WO2019035186A1

WO2019035186A1 - Noise reduction body, method for manufacturing same, electronic device using same

Info

Publication number: WO2019035186A1
Application number: PCT/JP2017/029440
Authority: WO
Inventors: 徹金城; 泰典樋口
Original assignee: 徹金城; 株式会社京楽産業ホールディングス
Priority date: 2017-08-16
Filing date: 2017-08-16
Publication date: 2019-02-21
Also published as: JP6473553B1; JPWO2019035186A1

Abstract

[Problem] To provide a novel noise reduction body using crystalline nano-diamond semiconductor particles [Solution] The present invention provides a noise reduction body 1 which reduces electromagnetic noise affecting electric circuits. This noise reduction body 1 is composed of a plurality cluster-type cells 2 which are excited independently from each other, have capacitance, and have semiconductor properties. In each cluster-type cell 2, a plurality of crystalline nano-diamond semiconductor particles 3 having a spontaneous charge and coated with amorphous silicon 4 are bonded in a tufted shape. Preferably, the diameter of the cluster-type cell 2 is 15-30 nm, the diameter of the crystalline nano-diamond semiconductor particles 3 is 3-8 nm, and the activation energy level of the crystalline nano-diamond semiconductor particles 3 is 0.3-0.7 eV.

Description

Noise reduction body, method for manufacturing the same, and electronic device using the same

The present invention relates to a noise reducer that reduces electromagnetic noise, a method of manufacturing the same, and an electronic device using the same.

Conventionally, nanodiamond particles are widely used as an abrasive for polishing a glass substrate of a magnetic disk, etc. However, in recent years, applications focused on spontaneous charges possessed by nanodiamond semiconductors have attracted attention. For example, Patent Document 1 discloses a technique in which a crystalline nanodiamond semiconductor having an activation energy level of 0.8 to 2.0 eV having a spontaneous charge is used as a solar cell protective film. This solar cell protective film increases the light absorbing ability by the light scattering effect of nano diamond semiconductor particles having a particle size of 3-8 nm, prevents the adhesion of dirt on the solar cell surface by the spontaneous charge, and prevents the aged deterioration of the output. An ultraviolet wavelength band of 400 nm or less is converted into a wavelength band of 0.5 to 2.0 μm to improve the photoelectric conversion efficiency.

Patent Document 2 discloses a functional fiber in which nano diamond semiconductor particles are dispersed in the fiber. Specifically, by using nanodiamond semiconductor particles having an activation energy level of 0.1 to 1.0 eV for generating charged particles at around room temperature, a large fiber of biological infrared radiation and charged particle activity is created. The semiconductor particles penetrate the gaps of the fiber polymer crystal and are connected in series in a pseudo manner, and a large electromotive force is generated by integrating the potentials between the particles generated by the excitation at heating around body temperature, and the living body Exert an effect.

Further, Patent Document 3 discloses an organic functional material using nano diamond semiconductor particles having ultraviolet absorbing ability and light energy converting ability to convert a wavelength from ultraviolet to infrared light. The organic functional material contains 0.0005 wt% or more of nano diamond semiconductor particles having an activation energy level of 0.2-1.0 eV.

JP, 2014-203985, A JP, 2011-074553, A JP, 2011-10635, A

By the way, the present inventors have previously conducted research on crystalline nano diamond semiconductor particles, and in this research process, a specific structure mainly comprising crystalline nano diamond semiconductor particles affects the electric circuit. It has been found that it has the effect of reducing the electromagnetic noise.

Therefore, an object of the present invention is to provide a novel noise reducer using crystalline nano diamond semiconductor particles.

In order to solve such problems, a first invention provides a noise reduction body that reduces electromagnetic noise that affects an electric circuit. The noise reducer is constituted of a plurality of cluster-type cells which are excited independently of one another, have capacitance, and have semiconductor characteristics. Each cluster type cell has a spontaneous charge, and a plurality of crystalline nano diamond semiconductor particles coated with amorphous silicon are bound in a tufted manner.

The second invention is composed of a plurality of cluster type cells which are excited independently of each other, have capacitance, and have semiconductor characteristics, and each of the cluster type cells has a spontaneous charge, Further, the present invention provides a method of manufacturing a noise reduction body in which crystalline nanodiamond semiconductor particles coated with amorphous silicon are bound in a plurality of tufts and electromagnetic noise affecting the electric circuit is reduced. In this manufacturing method, as the first step, crystalline nanodiamond is applied by applying a DC voltage to pure water mixed with crystalline nanodiamond semiconductor particles and powder of amorphous silicon through a pair of electrodes. The semiconductor particles are coated with amorphous silicon. As a second step, a noise reduction body is generated by applying a pulse voltage to pure water mixed with crystalline nano diamond semiconductor particles coated with amorphous silicon via a pair of electrodes.

A third invention provides an electronic device having a circuit element and a noise reducer. The circuit elements form part of an electric circuit, generate electromagnetic noise, or are affected by electromagnetic noise. The noise reducer is provided in contact with the circuit element or in the vicinity of the circuit element to reduce electromagnetic noise. The noise reducer is constituted of a plurality of cluster-type cells which are excited independently of one another, have capacitance, and have semiconductor characteristics. Each cluster type cell has a spontaneous charge, and a plurality of crystalline nano diamond semiconductor particles coated with amorphous silicon are bound in a tufted manner.

Here, in the first to third inventions, the diameter of the cluster type cell is 15 nm to 30 nm, the diameter of the crystalline nano diamond semiconductor particle is 3 nm to 8 nm, and the activation energy of the crystalline nano diamond semiconductor particle The level is preferably 0.3 eV or more and 0.7 eV or less.

According to the present invention, electromagnetic noise affecting the electric circuit can be effectively reduced. Typically, the noise reducer is provided in contact with or in the vicinity of a circuit element generating electromagnetic noise or a circuit element affected by the electromagnetic noise, and the adverse effect on the electronic device to which the electromagnetic noise is applied. Reduce.

Schematic diagram of noise reduction body Electron micrograph of noise reduction body Enlarged view of the electron micrograph of the noise reduction body Illustration of the method of manufacturing the noise reduction body Principal part sectional view of electronic device according to first example Principal part sectional view of electronic device according to second example Principal part sectional view of electronic device according to third example Principal part sectional view of electronic device according to fourth example Principal part sectional view of electronic device according to fifth example Principal part sectional view of electronic device according to sixth example Principal part sectional view of electronic device according to seventh example Comparison of output ripple noise before and after application of noise reducer Comparison of output ripple noise before and after the interposition of the paper to which the noise reduction body is applied

FIG. 1 is a schematic view of a noise reduction body according to the present embodiment, FIG. 2 is an electron micrograph of the noise reduction body, and FIG. 3 is an enlarged view thereof. The individual cluster-type cells 2 constituting the noise reduction body 1 vibrate at normal temperature, so it is not possible to take a fine electron micrograph at normal temperature. Therefore, imaging with an electron microscope is performed in a cryogenic environment (for example, -60.degree. C.) in which the vibration of the cluster type cell 2 stops.

The noise reduction body 1 is constituted by a large number of cluster cells 2 which are excited independently of each other. Each cluster type cell 2 has a substantially spherical shape, has a capacitance, and has a characteristic as a semiconductor. One cluster type cell 2 has a structure in which a plurality of crystalline nano diamond semiconductor particles 3 are bound in a tufted form (cluster form), that is, a cluster structure, and the diameter thereof is 15 nm or more and 30 nm or less. Each cluster type cell 2 is formed of an odd number and the same number of crystalline nano diamond semiconductor particles 3. Crystalline nano diamond semiconductor particles 3 have a spontaneous charge and are coated (coated) with amorphous silicon 4.

In the present embodiment, as the crystalline nano diamond semiconductor particles 3, those having a particle diameter of 3 nm or more and 8 nm or less are used. Particles of this size have the following characteristics. First, since the surface carbon SP2 layer becomes thin, the generation efficiency of excited charged particles is good, and the blending amount can be small. Second, it has spontaneous polarization and has high performance due to spontaneous charge. Third, the activation energy level of the spontaneous charge is 0.3 eV or more and 0.7 eV or less, and a large number of excited charged particles are generated.

Crystalline nano diamond semiconductor particles 3 can typically be obtained by shock compression. This method is also referred to as an explosion method or a detonation method, and is generated by finely crushing using explosive energy of explosives. When explosives (including elemental carbon) are detonated in an environment where air exists, if the explosive energy is huge, nano-sized diamonds are naturally produced. Thus, it is not necessary to prepare a mass of material to be ground. The history of synthetic diamond synthesis is long, and around 1953 the Soviet Union announced the first reproducible synthetic method using high temperature high pressure synthesis (HPHT) and chemical vapor deposition (CVD) methods. Later, detonation was developed in the late 1990's using explosives containing carbon elements. Therefore, the method of manufacturing the crystalline nano diamond semiconductor particles 3 itself is the technical common sense at the time of the application of the present application.

Below, the manufacturing method of the noise reduction body 1 is demonstrated. As shown in FIG. 4, in the processing container, a pair of electrodes consisting of an anode and a cathode are arranged at predetermined intervals, and an alcohol-based liquid such as ethanol is stored. In addition, a DC power supply, a protective resistor, an ammeter, and the like are connected to the wiring connecting the pair of electrodes.

First, crystalline nano diamond semiconductor particles and powder of amorphous silicon are mixed in high purity pure water (chiller) stored in a processing container. Then, a direct current voltage is applied to the liquid in which these are mixed, through the pair of electrodes. Thereby, as shown in FIG. 1, the periphery of the crystalline nano diamond semiconductor particles 3 is coated with amorphous silicon 4. The reason why the coating process of the amorphous silicon 4 is performed is to give the function of passing electrons between the crystalline nano diamond semiconductor particles 3 in the cluster type cell 2, in other words, to form a hole phase shift layer. is there.

Next, a pulse voltage is applied to the pure water mixed with the crystalline nano diamond semiconductor particles 3 coated with the amorphous silicon 4 through the pair of electrodes. The mixed water to which the pulse voltage is to be applied may be the water treated in the process of FIG. 4 as it is, or the crystalline nanodiamond semiconductor particles 3 coated and powdered after the drying process may be pure water. It may be generated by mixing again. By application of the pulse voltage, as shown in FIG. 1, an odd number and an equal number of crystalline nano diamond semiconductor particles 3 are combined and grouped (thrusting). As a result, the noise reducer 1 which is excited independently of one another, has a capacitance, and has characteristics as a semiconductor is generated.

As exemplified below, the noise reducer 1 can be widely used in applications that reduce electromagnetic noise that affects electric circuits. The noise reduction body 1 is provided in contact with or in proximity to at least one of a circuit element (a noise source) generating electromagnetic noise and a circuit element affected by the electromagnetic noise in an electronic device including an electric circuit. Examples of the former include loop antennas and switching circuits. In general, in a circuit in which a high frequency current flows, an unnecessary electromagnetic wave (electromagnetic noise) which is noise is generated due to the inductance of the wiring or the like. Moreover, an IC chip etc. are mentioned as an example of the latter. The following example shows a structure in which the former and the latter exist, but a structure in which only one of them exists may be used.

FIG. 5 is a cross-sectional view of main parts of the electronic device according to the first example. The electronic device 5 </ b> A includes an electric circuit mounted on the substrate 6. Specifically, at least one conductive layer 7 is formed in a predetermined pattern on the printed circuit board 6, and a surface insulating layer 8a having a predetermined pattern is formed on the upper side thereof. The surface insulating layer 8a is partially removed, and the conductive element 7 exposed thereby is connected to the circuit element 9a that generates electromagnetic noise and 9b that is affected by the electromagnetic noise.

The surface insulating layer 8 a includes the noise reducer 1 described above. Such a configuration can be obtained by applying an insulating coating agent in which the noise reducing body 1 is mixed, or after applying the insulating coating agent to form the surface insulating layer 8a, noise may be generated on the surface thereof. It can also be obtained by further applying a liquid agent in which the reducing body 1 is dispersed in silicone oil. In the latter case, even if the applied liquid agent is wiped off after that, the noise reduction body 1 which has penetrated into the minute unevenness of the surface insulating layer 8a remains in a microscopic view, so the noise in the surface insulating layer 8a The state in which the reducing body 1 is included is not impaired.

In this configuration, the noise reducer 1 is present in the vicinity of the lower side of the devices 9a and 9b. The noise reducer 1 present in the lower vicinity of the device 9a reduces the influence of electromagnetic noise generated by the device 9a on other circuit elements such as the device 9b. Further, the noise reducer 1 present in the lower vicinity of the device 9b reduces the influence of electromagnetic noise generated in other circuit elements such as the device 9a on the device 9b. As a result, the electronic device 5A that is less susceptible to the influence of electromagnetic noise can be realized.

FIG. 6 is a cross-sectional view of main parts of the electronic device according to the second example. In the electronic device 5B, a plurality of conductive layers 7 are stacked, and an interlayer insulating film 8b including the noise reduction body 1 is interposed between the upper and lower conductive layers 7. Such a configuration can be obtained by applying an insulating coating agent in which the noise reduction body 1 is mixed as the interlayer insulating film 8 b. The other points are the same as in FIG. 5, so the same reference numerals are given and the description thereof is omitted here (the same applies to FIGS. 7 to 11 below). In this configuration, by providing the noise reduction body 1 in the vicinity of the lower side of the devices 9a and 9b, the electronic device 5B that is less susceptible to the influence of electromagnetic noise can be realized.

FIG. 7 is a cross-sectional view of main parts of an electronic device according to a third example. In the electronic device 5C, the circuit elements 9a and 9b are mounted on the substrate 8 on which the conductive layer 7 and the surface insulating layer 8a are formed, and the liquid agent in which the noise reduction body 1 is dispersed in silicon oil is It is applied to the entire surface. The noise reducer 1 is in contact with or in the vicinity of the devices 9a and 9b. Thereby, the electronic device 5C which is less susceptible to the influence of electromagnetic noise can be realized.

FIG. 8 is a cross-sectional view of main parts of the electronic device according to the fourth example. In the electronic device 5D, the circuit elements 9a and 9b are mounted on the substrate 8 on which the conductive layer 7 and the surface insulating layer 8a are formed, and the liquid agent in which the noise reduction body 1 is dispersed in silicon oil It is partially applied to the contacts (terminals) of the elements 9a, 9b. These contacts are exposed to the outside, and are likely to emit electromagnetic noise to the outside, or to be susceptible to external electromagnetic noise. Therefore, only by partially providing the noise reduction body 1 at these contact points, the electronic device 5D that is less susceptible to the influence of electromagnetic noise can be realized.

FIG. 9 is a cross-sectional view of main parts of the electronic device according to the fifth example. In the electronic device 5E, the circuit elements 9a and 9b are mounted on the substrate 8 on which the conductive layer 7 and the surface insulating layer 8a are formed, and the liquid agent in which the noise reduction body 1 is dispersed in silicon oil Are partially applied to the circuit elements 9a and 9b. These circuit elements 9a and 9b are exposed to the outside, and it is easy to radiate electromagnetic noise to the outside, or external electromagnetic noise is easily incident. Therefore, it is possible to realize the electronic device 5E which is less susceptible to the influence of the electromagnetic noise, even if the noise reducer 1 is partially present.

FIG. 10 is a cross-sectional view of main parts of the electronic device according to the sixth example. In the electronic device 5F, the circuit elements 9a and 9b are mounted on the substrate 8 on which the conductive layer 7 and the surface insulating layer 8a are formed, and the whole is covered with the cover 10 including the noise reduction body 1. The noise reduction body 1 may be mixed in the material forming the cover body 10, or the liquid agent containing the noise reduction body 1 may be applied after the formation of the cover body 10. As a result, the electronic device 5F that is less susceptible to the influence of electromagnetic noise can be realized.

FIG. 11 is a cross-sectional view of main parts of the electronic device according to the seventh example. In the electronic device 5G, the circuit elements 9a and 9b are mounted on the substrate 8 on which the conductive layer 7 and the surface insulating layer 8a are formed, and these circuit elements 9a and 9b are shields for reducing the influence of electromagnetic noise It is covered with The noise reducer 1 may be mixed in the material forming the shield 11 or a liquid agent containing the noise reducer 1 may be applied after the shield 11 is formed. Thereby, the noise reduction effect of the shield 11 is enhanced, and the electronic device 5G which is less susceptible to the influence of the electromagnetic noise can be realized.

According to the present embodiment, it is possible to effectively reduce the electromagnetic noise that affects the electric circuit. Typically, the noise reduction body 1 is provided in contact with or in the vicinity of the circuit element 9 a generating the electromagnetic noise and the circuit element 9 b affected by the electromagnetic noise, to the electronic device to which the electromagnetic noise is applied. Reduce the adverse effects of At present, although it is unclear about the mechanism by which a specific structure mainly composed of crystalline nano diamond semiconductor particles reduces electromagnetic noise, it is proved from the following experimental results that the noise reduction effect is exhibited.

As a first experiment, before and after the application of the noise reduction body 1, characteristics (output ripple noise) regarding the magnetic field emission of the DC / DC converter were measured by a loop antenna. FIG. 12 is a comparison diagram of the output ripple noise before and after application of the noise reduction body 1, and FIG. 12 (a) shows the characteristics before application of the noise reduction body 1, and FIG. 12 (b) shows characteristics after application of the noise reduction body 1. Respectively. Before application, it was 1.252 Vp-p, but after application was 0.457 Vp-p, and the result was obtained in which the height difference between the upper and lower peaks was reduced to about 1/3. From this, it can be understood that electromagnetic noise can be effectively reduced when the noise reducer 1 is provided in direct contact with the DC / DC converter (circuit element).

As a second experiment, the output ripple noise was measured by the loop antenna before and after the paper coated or impregnated with the noise reduction body 1 was interposed between the DC / DC converter and the loop antenna (gap). FIG. 13 is a comparison diagram of output ripple noise before and after the interposition of the paper with noise reduction body 1, and FIG. 13 (a) shows characteristics before interposition of paper and FIG. 13 (b) shows characteristics after intervene of paper. Before intervention, it was 371.25mVp-p, but after intervention it was 165.00mVp-p, and the result was obtained that the height difference between the upper and lower peaks was reduced by 1/2 or more. From this, it can be understood that the electromagnetic noise can be effectively reduced even when the noise reduction body 1 is provided in the vicinity of the DC / DC converter (circuit element).

In the embodiment described above, examples of the electronic devices 5A to 5G include a device functioning as a passive element, a device functioning as an active element, a device functioning as a capacitive element, etc. The noise reduction effect is exhibited when Moreover, the noise reduction body 1 is an application which reduces electromagnetic noise, and can be widely applied to various applied products including the case of an electric device, fibers such as clothes, construction materials, and the like.

REFERENCE SIGNS LIST 1 noise reduction body 2 cluster type cell 3 crystalline nano diamond semiconductor particle 4 amorphous silicon 5 A to 5 G electronic equipment 6 printed circuit board 7 conductive layer 8 a surface insulating layer 8 b interlayer insulating film 9 a, 9 b circuit element 10 cover 11 shield

Claims

In a noise reducer that reduces electromagnetic noise that affects electrical circuits,
It consists of a plurality of cluster-type cells which are excited independently of one another, have capacitance, and have characteristics as a semiconductor,
Each of the plurality of clustered cells is
What is claimed is: 1. A noise reducer characterized in that a plurality of crystalline nano diamond semiconductor particles having a spontaneous charge and coated with amorphous silicon are bound in a tufted manner.
The noise reduction body according to claim 1, wherein the diameter of the cluster type cell is 15 nm or more and 30 nm or less.
The noise reduction body according to claim 1 or 2, wherein a diameter of the crystalline nano diamond semiconductor particles is 3 nm or more and 8 nm or less.
The noise reduction body according to claim 3, wherein an activation energy level of the crystalline nano diamond semiconductor particles is 0.3 eV or more and 0.7 eV or less.
A plurality of cluster-type cells excited independently of one another, having capacitance and having characteristics as a semiconductor, each of the cluster-type cells having a spontaneous charge and being made of amorphous silicon In a method of manufacturing a noise reduction body, in which coated crystalline nano diamond semiconductor particles are bound in a plurality of tufts and electromagnetic noise affecting the electric circuit is reduced,
The crystalline nano diamond semiconductor particles are coated with the amorphous silicon by applying a direct current voltage to pure water mixed with the crystalline nano diamond semiconductor particles and powder of amorphous silicon through a pair of electrodes. The first step,
A second step of generating the noise reduction body by applying a pulse voltage to the pure water mixed with the crystalline nanodiamond semiconductor particles coated with the amorphous silicon through a pair of electrodes A method of manufacturing a noise reduction body characterized in that.
The method of manufacturing a noise reduction body according to claim 5, wherein a diameter of the cluster type cell is 15 nm or more and 30 nm or less.
The diameter of the said crystal | crystallization type nano diamond semiconductor particle | grain is 3 nm or more and 8 nm or less, The manufacturing method of the noise reduction body described in Claim 5 or 6 characterized by the above-mentioned.
The method for producing a noise reduction body according to claim 7, wherein the activation energy level of the crystalline nano diamond semiconductor particles is 0.3 eV or more and 0.7 eV or less.
In electronic devices,
Circuit elements that form part of an electric circuit and generate electromagnetic noise or are affected by electromagnetic noise;
A noise reducer provided in contact with or in the vicinity of the circuit element to reduce the electromagnetic noise;
The noise reducer comprises a plurality of cluster type cells which are excited independently of each other, have a capacitance, and have a characteristic as a semiconductor,
An electronic device characterized in that each of the plurality of cluster-type cells has a spontaneous charge, and a plurality of crystalline nano diamond semiconductor particles coated with amorphous silicon are bound in a chain shape.
The electronic device according to claim 9, wherein a diameter of the cluster type cell is 15 nm or more and 30 nm or less.
11. The electronic device according to claim 9, wherein a diameter of the crystalline nano diamond semiconductor particle is 3 nm or more and 8 nm or less.
The electronic device according to claim 11, wherein the activation energy level of the crystalline nano diamond semiconductor particles is 0.3 eV or more and 0.7 eV or less.