WO2019033344A1 - 电子设备 - Google Patents

电子设备 Download PDF

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Publication number
WO2019033344A1
WO2019033344A1 PCT/CN2017/097904 CN2017097904W WO2019033344A1 WO 2019033344 A1 WO2019033344 A1 WO 2019033344A1 CN 2017097904 W CN2017097904 W CN 2017097904W WO 2019033344 A1 WO2019033344 A1 WO 2019033344A1
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WO
WIPO (PCT)
Prior art keywords
electronic device
light
photosensitive
imaging element
display
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Application number
PCT/CN2017/097904
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English (en)
French (fr)
Inventor
李问杰
Original Assignee
深圳信炜科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 深圳信炜科技有限公司 filed Critical 深圳信炜科技有限公司
Priority to CN201790000166.0U priority Critical patent/CN210573815U/zh
Priority to PCT/CN2017/097904 priority patent/WO2019033344A1/zh
Publication of WO2019033344A1 publication Critical patent/WO2019033344A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition

Definitions

  • the utility model relates to an electronic device capable of realizing sensing.
  • the optical fingerprint recognition module includes an optical fingerprint sensor 400 and a light source 402.
  • the optical fingerprint sensor 400 is disposed under the protective cover 401 of the mobile terminal.
  • the light source 402 is disposed adjacent to one side of the optical fingerprint sensor 400.
  • the light signal emitted by the light source 402 passes through the protective cover 401 and reaches the finger F, is reflected by the valleys and ridges of the finger F, and is received by the optical fingerprint sensor 400, and A fingerprint image of the finger F is formed.
  • the above optical fingerprint recognition module is suitable for the non-display area setting of the corresponding mobile terminal, so it is necessary to propose a fingerprint recognition sensing device that can correspond to the display area setting of the mobile terminal.
  • inventions of the present invention aim to at least solve one of the technical problems existing in the prior art. To this end, embodiments of the present invention need to provide an electronic device.
  • An electronic device includes a display screen and a photoelectric sensing device located under the display screen, the display screen includes a plurality of display pixels, and adjacent display pixels have a gap therebetween;
  • the photoelectric sensing device includes a substrate and a plurality of photosensitive devices disposed on the substrate, and the photosensitive device is correspondingly located below the gap.
  • the electronic device of the embodiment of the present invention not only realizes the sensing of the biometric information of the target object in the display area of the electronic device by setting the photoelectric sensing device under the display screen, but also utilizes the optical signal emitted by the display screen. Realizing the biometric information sensing of the target object, thereby eliminating the need to additionally set the light source, and reducing the sensing cost of the electronic device. Moreover, since the photoelectric sensing device is located below the display screen, it does not affect the electronic device. normal display.
  • the photoelectric sensing device is disposed under the display screen of the electronic device, not only the image information of the target object is obtained from the front side of the electronic device, but also the screen ratio of the front surface of the electronic device can be sufficiently large to facilitate the electronic device. Develop in the direction of full screen display.
  • the photosensitive device is disposed under the light-transmitting region, so that the photosensitive device receives the light signal passing through the light-transmitting region, and performs biometric information sense. Measurement.
  • the structure of the display screen does not need to be improved, and the biometric information of the target object can be sensed by using the existing display screen structure, which not only reduces the cost of the electronic device, but also ensures the sense of the target object. Measurement accuracy.
  • a light transmissive region is formed within the gap.
  • the photosensitive device is located directly below the gap to receive an optical signal that passes through the gap. In this way, it is ensured that a sufficient number of optical signals in the optical signal passing through the gap are received by the photosensitive device, thereby improving the sensing accuracy of the photoelectric sensing device.
  • the display screen includes an OLED display.
  • the display pixels include three display pixels of red, green, and blue.
  • the photosensitive devices are distributed in an array on a side of the substrate adjacent the display screen.
  • the optoelectronic sensing device further includes an anti-aliasing imaging element disposed on a substrate provided with the photosensitive device for preventing adjacent photosensitive devices The optical signal received indirectly produces aliasing.
  • the anti-aliasing imaging element is disposed on the substrate provided with the photosensitive device, so that the optical signals received between the adjacent photosensitive devices are not aliased, so that the image obtained after performing the light sensing is clearer, thereby improving the image. Sensing accuracy.
  • the anti-aliasing imaging element includes a light absorbing wall and a plurality of light transmissive regions surrounded by a light absorbing wall.
  • the plurality of light transmissive regions are evenly distributed.
  • the evenly distributed light-transmissive region makes the preparation process of the anti-aliasing imaging element simpler.
  • the light absorbing wall comprises a plurality of light absorbing blocks and height blocks arranged in an alternating stack. Since the thickness of each light absorbing block is smaller than the thickness of the light absorbing wall, the process of etching to form the light transmitting area is relatively easy, so that the process of anti-aliasing imaging element is easy, and the light transmission property of the light transmitting area is also ensured. .
  • the light-absorbing wall is formed by laminating the height blocks and the light-absorbing blocks, which speeds up the process of the anti-aliasing imaging element and ensures the anti-aliasing effect of the anti-aliasing imaging element.
  • the height block is made of a transparent material.
  • the light transmissive region is filled with a transparent material. Filling the transparent material with a transparent material, It not only increases the strength of the anti-aliasing imaging element, but also prevents impurities from entering the light-transmitting area and affecting the light-transmitting effect.
  • the anti-aliasing imaging element comprises a plurality of layers of light absorbing layers and transparent support layers arranged alternately; the light absorbing layer comprises a plurality of spaced apart light absorbing blocks; the transparent supporting layer is filled with a transparent material Forming, and filling the interval between the light absorbing blocks together; wherein the area corresponding to the interval forms a light transmitting area.
  • the thickness of each of the transparent support layers is unequal.
  • the thickness of the transparent support layer increases layer by layer.
  • the optical signal outside the preset angular range with respect to the vertical direction of the photosensitive die is prevented from passing through the anti-aliasing imaging element, thereby improving the anti-aliasing effect of the anti-aliasing imaging element.
  • the photosensor device further includes a filter film disposed on a side of the anti-aliasing imaging element away from the substrate, or the filter film is disposed on Between the anti-aliasing imaging element and the photosensitive device.
  • the filter film is used to filter out optical signals other than blue or green light signals.
  • the interference signal in the ambient light can be effectively filtered, thereby improving the sensing accuracy.
  • the photosensor device further includes a package for performing the substrate, and the photosensitive device, the anti-aliasing imaging element, and the filter film on the substrate Package.
  • the area of the display corresponding to or facing the photo-sensing device is a sensing area, and the sensing area is located at a lower-middle position of the display area of the display screen. In this way, it will be convenient for the user to operate.
  • the photosensor device is a sensor chip for sensing biometric information.
  • the optoelectronic sensing device is a fingerprint sensing device.
  • FIG. 1 is a schematic diagram of an optical sensing structure applied to an electronic device in the prior art
  • FIG. 2 is a schematic front view showing an embodiment of an electronic device to which the photoelectric sensing device of the present invention is applied;
  • FIG. 3 is a cross-sectional structural view of the electronic device of FIG. 2 taken along line I-I, in which only the part of the electronic device is shown Substructure
  • FIG. 4 is a partial structural schematic view of a photoelectric sensing device according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a range of optical signals that an anti-aliasing imaging element of an embodiment of the photoelectric sensing device shown in FIG. 4 can pass through;
  • FIG. 6 is a partial structural schematic view of an anti-aliasing imaging element according to an embodiment of the present invention.
  • FIG. 7 is a partial structural schematic view of an anti-aliasing imaging element according to another embodiment of the present invention.
  • Figure 8 is a schematic view showing the preparation process of the anti-aliasing imaging element shown in Figure 6;
  • FIG. 9 is a partial structural schematic view of an anti-aliasing imaging element according to still another embodiment of the present invention.
  • FIG. 10 is a partial structural schematic view of a photoelectric sensing device according to another embodiment of the present invention.
  • FIG. 11 is a schematic structural view of a photoelectric sensor device according to still another embodiment of the present invention.
  • FIG. 12 is a partial structural schematic view of a photosensitive die according to an embodiment of the present invention.
  • FIG. 13 is a block diagram showing the structure of a photoelectric sensor device according to still another embodiment of the present invention.
  • FIG. 14 is a schematic diagram showing the circuit structure of a photosensitive pixel according to an embodiment of the present invention.
  • FIG. 15 is a schematic circuit diagram of a photosensitive pixel according to another embodiment of the present invention.
  • FIG. 16 is a schematic structural view of a display screen according to an embodiment of the present invention.
  • 17 is a schematic diagram showing the relative positional relationship between a display pixel and a photosensitive device in a photoelectric display device according to an embodiment of the present invention.
  • FIG. 18 is a schematic front view showing another embodiment of an electronic device to which the photoelectric sensor device of the present invention is applied.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. .
  • features defining “first” or “second” may include one or more of the described features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined otherwise.
  • Contact or “touch” includes direct or indirect contact.
  • the photoelectric sensing device disclosed hereinafter is disposed inside the electronic device, such as under the display screen, and the user's finger indirectly contacts the photoelectric sensing device through the protective cover and the display screen.
  • connection is to be understood broadly, and may be, for example, a fixed connection or a Disassembling the connection, or connecting integrally; may be mechanical connection, electrical connection or communication with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or mutual interaction of two elements Role relationship.
  • installation is to be understood broadly, and may be, for example, a fixed connection or a Disassembling the connection, or connecting integrally; may be mechanical connection, electrical connection or communication with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or mutual interaction of two elements Role relationship.
  • the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
  • the embodiment of the present invention provides a photoelectric sensing device disposed in an electronic device, especially disposed under the display screen of the electronic device.
  • the display screen has a display device that emits an optical signal, such as, but not limited to, an OLED display panel.
  • the display screen emits an optical signal to achieve the corresponding display effect.
  • the target object touches the electronic device, the light signal emitted by the display screen reaches the target object and then reflects, and the reflected light signal passes through the display screen and is received by the photoelectric sensing device, and the photoelectric sensing device receives the received signal.
  • the optical signal is converted into an electrical signal corresponding to the optical signal. Based on the electrical signals generated by the photoelectric sensing device, predetermined biometric information of the target object can be obtained.
  • the above electronic device is, for example, but not limited to, a suitable type of electronic product such as a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, or a financial terminal product.
  • consumer electronic products such as mobile phones, tablets, notebook computers, desktop monitors, computer integrated machines.
  • Home-based electronic products such as smart door locks, TVs, refrigerators, wearable devices, etc.
  • Vehicle-mounted electronic products such as car navigation systems, car DVDs, etc.
  • Financial terminal products such as ATM machines, terminals for self-service business, etc.
  • the following embodiments are described by taking a mobile terminal of the mobile phone as an example. However, as described above, the following embodiments are also applicable to other suitable electronic products, and are not limited to mobile terminals.
  • the predetermined biometric information (or image information) of the target object is, for example but not limited to, skin texture information such as fingerprints, palm prints, ear prints, and soles, and other suitable biometric information such as heart rate, blood oxygen concentration, veins, and arteries. interest.
  • the predetermined biometric information may be any one or more of the aforementioned enumerated information.
  • the target object may be, for example but not limited to, a human body, and may be other suitable types of organisms.
  • FIG. 2 shows a front structure of an embodiment of an electronic device to which the photoelectric sensor device of the present invention is applied
  • FIG. 3 shows a partial cross-sectional structure of the electronic device of FIG. 2 along line II.
  • FIG. 3 only shows a partial structure of the electronic device.
  • the photoelectric sensor device 20 of the embodiment of the present invention is applied to a mobile terminal 100.
  • the front surface of the mobile terminal 100 is provided with a display screen 10, and a protective cover 30 is disposed above the display screen 10.
  • the screen of the display screen 10 is relatively high, for example, 80% or more.
  • the screen ratio refers to the ratio of the display area S1 of the display screen 10 to the front area of the mobile terminal 100.
  • the photoelectric sensing device 20 is disposed correspondingly below the display screen 10 and is disposed corresponding to a partial region of the display region S1 of the display screen 10.
  • the area defining the front side of the mobile terminal 100 corresponding to or facing the photoelectric sensing device 20 is the sensing area S2.
  • the photoelectric sensing device 20 is configured to sense predetermined biometric information contacting or approaching a target object above the sensing region S2. It can be understood that the photoelectric sensing device 20 can also be disposed under the protective cover 30 and located in the front non-display area of the mobile terminal 100.
  • the sensing area S2 can be any position on the display area.
  • the sensing area S2 is disposed at a mid-lower position corresponding to the display area of the display screen 10. It can be understood that the sensing area S2 is disposed at a middle-lower position corresponding to the display screen 10 for the convenience of the user. For example, when the user holds the mobile terminal 100, the thumb of the user can conveniently touch the location of the sensing area S2.
  • the sensing area S2 can also be placed at other suitable locations that are convenient for the user to touch.
  • the display screen 10 When the mobile terminal 100 is in a bright screen state and is in the biometric information sensing mode, the display screen 10 emits an optical signal.
  • the photoelectric sensing device 20 receives the light reflected by the object, converts the received light into a corresponding electrical signal, and acquires a predetermined creature of the object according to the electrical signal.
  • Feature information for example, fingerprint image information.
  • the photoelectric sensing device 20 can perform biometric information sensing on a target object that contacts or approaches a local area above the display area.
  • FIG. 4 shows a partial structure of a photoelectric sensing device 20 according to an embodiment of the present invention.
  • the photosensor device 20 includes a photosensitive die 24, and the photosensitive die 24 includes a plurality of photosensitive pixels 22.
  • the photosensitive pixel 22 is configured to receive an optical signal from above and convert the received optical signal into a corresponding electrical signal.
  • the photosensitive die 24 is provided with an anti-aliasing imaging element 28 for preventing aliasing of received optical signals between adjacent photosensitive pixels 22.
  • an anti-aliasing imaging element 28 is disposed on the photosensitive die 24, so that the image obtained by the photosensitive pixel 22 after performing light sensing is relatively clear, thereby improving the sensing accuracy of the photoelectric sensing device 20.
  • the anti-aliasing imaging element 28 has light absorbing properties that illuminate the optical signal on the anti-aliasing imaging element 28, only the optical signal that is approximately perpendicular to the photosensitive die 24 can pass through the anti-aliasing Imaging element 28 is received by photosensitive pixel 22, and the remaining optical signals are absorbed by anti-aliasing imaging element 28. In this way, it is possible to prevent aliasing of optical signals received between adjacent photosensitive pixels 22.
  • the optical signal that is approximately perpendicular to the photosensitive die 24 includes an optical signal that is perpendicular to the photosensitive die 24, and is offset from the vertical direction of the photosensitive die 24 by a predetermined range of optical signals. The preset angle range is within ⁇ 20°.
  • the anti-aliasing imaging element 28 includes a light absorbing wall 281 and a plurality of light transmissive regions 282 surrounded by a light absorbing wall 281.
  • the light absorbing wall 281 is formed of a light absorbing material.
  • the light absorbing material includes a metal oxide, a carbon black paint, a black ink, and the like.
  • the metal in the metal oxide is, for example but not limited to, one of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo) or Several.
  • the extending direction of the light transmitting region 282 is a direction perpendicular to the photosensitive die 24 so that the light signal in the direction perpendicular to the photosensitive die 24 can be transmitted through the light signal irradiated to the anti-aliasing imaging element 28.
  • the remaining optical signals are absorbed by the light absorbing wall 281.
  • FIG. 5 illustrates a range of optical signals that pass through the anti-aliasing imaging element 28. Due to the light absorbing characteristics of the anti-aliasing imaging element 28, only the optical signal between the optical signal L1 and the optical signal L2 can pass through the light-transmitting region 282 to the photosensitive pixel 22, and the remaining optical signals are absorbed by the absorption wall 281 of the anti-aliasing imaging element 28. absorb. As can be seen from FIG. 5, the smaller the cross-sectional area of the light-transmitting region 282, the smaller the range of the angle ⁇ of the light signal passing through the light-transmitting region 282, and therefore the anti-aliasing effect of the anti-aliasing imaging element 28 is better.
  • the anti-aliasing effect of the anti-aliasing imaging element 28 can be improved by the relatively small area of the light-transmitting region 282 provided by the anti-aliasing imaging element 28.
  • the cross-sectional area of the light-transmitting region 282 of the anti-aliasing imaging element 28 is small, each of the photosensitive pixels 22 will correspond to the plurality of light-transmitting regions 282, so that the photosensitive pixels 22 can sense sufficient light signals, The sensing accuracy of the photoelectric sensing device 20 is improved.
  • the light absorbing wall 281 has a multi-layer structure, and the light absorbing wall includes a light absorbing block 281a and a height block 281b which are alternately stacked.
  • the light absorbing block 281a is formed of a light absorbing material.
  • the light absorbing material is, for example but not limited to, a metal oxide, a carbon black paint, a black ink, or the like.
  • the metal in the metal oxide is, for example but not limited to, one of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo) or Several.
  • the height block 281b is, for example but not limited to, a transparent layer formed of a transparent material such as a translucent material, a light absorbing material, or the like.
  • the plurality of light absorbing blocks 281a located in the same layer are spaced apart, and the area corresponding to the interval between the light absorbing blocks 281a in the same layer is the light transmitting area 282.
  • a plurality of light absorbing blocks of the same layer 281a and a plurality of padding blocks 281b can be made at one time.
  • the mask is an integrally formed diaphragm, and the diaphragm forms an opening corresponding to the position of the light absorbing block 281a, and the shape and size of the opening are consistent with the shape and size of the light absorbing block 283.
  • the light absorbing block 281a and the height block 281b which are alternately disposed are sequentially vapor-deposited on a carrier by the mask, thereby forming the anti-aliasing imaging element 28.
  • the padding block 281b By the arrangement of the padding block 281b, not only the process of the anti-aliasing imaging element 28 is accelerated, but also the anti-aliasing effect of the anti-aliasing imaging element 28 can be ensured by the height setting of the padding block 281b.
  • the transparent region 282 may be filled with a transparent material to increase the strength of the anti-aliasing imaging element layer, and also to prevent impurities from entering the light-transmitting region 282 to affect the light-transmitting effect.
  • a material having a relatively high light transmittance such as glass, PMMA (acrylic), PC (polycarbonate) or the like may be selected as the transparent material.
  • FIG. 7 illustrates the structure of an anti-aliasing imaging element of another embodiment of the present invention.
  • the anti-aliasing imaging element 28 is of a multi-layer structure, and the anti-aliasing imaging element 28 includes a light absorbing layer 283 and a transparent supporting layer 284 which are alternately stacked; the light absorbing layer 283 includes a plurality of spaced light absorbing blocks 283a;
  • the transparent support layer 284 is formed by filling a transparent material and filling the space 283b between the light absorption blocks 283a together; wherein the area corresponding to the space 283b forms the light transmission area 282.
  • FIG. 8 illustrates a process of preparing an anti-aliasing imaging element according to an embodiment of the present invention.
  • a light absorbing material is first coated on a carrier, and a corresponding portion of the light transmitting region 282 is etched away on the light absorbing material layer, and the unetched portion is formed.
  • the etching technique is, for example but not limited to, photolithography, X-ray etching, electron beam etching, and ion beam etching.
  • the etching type may include both dry etching and wet etching.
  • the etched light absorbing block 283 is coated with a transparent material, and the transparent material covers not only the plurality of light absorbing blocks 283a but also the space 283b between the plurality of light absorbing blocks 283a, thereby forming the transparent supporting layer 284. .
  • a plurality of light absorbing blocks 283a are formed on the transparent supporting layer 284 in the manner in which the light absorbing layer 283 is formed, and the light absorbing layer 283 and the transparent supporting layer 284 which are alternately stacked in a plurality of layers are sequentially formed, thereby forming the anti-aliasing imaging element 28.
  • the transparent material forming the transparent supporting layer 284 may be selected from materials having a relatively high light transmittance, such as glass, PMMA, PC (polycarbonate), epoxy resin. Wait.
  • FIG. 9 illustrates the structure of an anti-aliasing imaging element of another embodiment of the present invention.
  • the anti-aliasing imaging element 28 includes a light absorbing layer 283 and a transparent support layer 284 which are alternately stacked, and the thickness of each of the transparent support layers 284 is unequal. That is, the values of the thicknesses h1, h2, and h3 in FIG. 7 are not equal.
  • the thickness of the transparent support layer 284 is increased layer by layer, that is, h1 ⁇ h2 ⁇ h3.
  • the optical signal outside the vertical direction of the photosensitive die 24 is offset by ⁇ 20° and passes through the transparent supporting layer 284 between the light absorbing blocks 283a, thereby improving the Sensing accuracy of the photoelectric sensing device 20.
  • the thickness parameter of each layer of the transparent supporting layer 284 and the width and height parameters of the light absorbing block 283a can be differently set and combined in various combinations to improve the sensing accuracy of the photoelectric sensing device 20.
  • the anti-aliasing imaging element 28 is formed directly on the photosensitive die 24, i.e., the carrier when the anti-aliasing imaging element 28 is formed is a photosensitive die 24 having photosensitive pixels 22.
  • the anti-aliasing imaging element 28 can be modified, for example, to be disposed on the photosensitive die 24 provided with the photosensitive pixels 22, thereby speeding up the process of the photoelectric sensing device 20.
  • the plurality of light transmissive regions 282 in the anti-aliasing imaging element 28 are evenly distributed, thereby making the preparation process of the anti-aliasing imaging element 28 relatively simple.
  • the anti-aliasing imaging element 28 can be, for example, an integrally formed film that is separately fabricated and attached to the photosensitive die 24, thereby accelerating the process of the photosensor device 20.
  • taking the target object as a finger when the finger is located on the protective cover 30, if the ambient light is irradiated on the finger, and the finger has many tissue structures, such as the epidermis, bones, meat, blood vessels, and the like, Therefore, part of the light signal in the ambient light will penetrate the finger, and part of the light signal will be absorbed by the finger. The light signal penetrating the finger will be transmitted to the protective cover 30 under the finger and reach the photoelectric sensing device 20. At this time, the photoelectric sensing device 20 not only senses the light signal reflected by the target object, but also senses the ambient light. The light signal that penetrates the finger is so unable to accurately sense.
  • FIG. 10 shows the structure of the photoelectric sensing device 20 of another embodiment of the present invention.
  • a filter film 23 is disposed on the photosensitive die 24, that is, the filter film 23 is disposed between the photosensitive die 24 and the anti-aliasing imaging element 28.
  • the filter film 23 is for filtering optical signals other than the predetermined wavelength band.
  • the optical signal other than the preset wavelength band is an interference signal formed by ambient light, that is, an optical signal that can penetrate the finger in the ambient light.
  • the filter film 23 filters out the interference signal in the reflected light signal, thereby improving the sensing accuracy of the photoelectric sensor device 20.
  • the filter film 23 can also be disposed on the anti-aliasing imaging element 28, that is, the filter film 23 is disposed on the side of the anti-aliasing imaging element 28 away from the photosensitive die 24.
  • the optical signal other than the optical signal of the preset wavelength band is the optical signal of the longer wavelength band in the ambient light, because the optical signal of the longer wavelength band can penetrate the target object, and the optical signal of the shorter wavelength band is The target object is absorbed. Therefore, by filtering out the optical signal of the longer wavelength band in the ambient light, the optical signal penetrating the finger in the ambient light can be filtered out, thereby achieving the purpose of eliminating the interference signal of the ambient light.
  • the predetermined wavelength band is a wavelength band corresponding to the blue light signal, that is, the filter film 23 filters out optical signals other than the blue light signal.
  • the predetermined band is a band corresponding to the green light signal, that is, the filter film 23 filters out the light signals other than the green light signal.
  • the target object such as a finger absorbs the red light signal the weakest, followed by the green light signal, and absorbs the blue light signal the strongest. That is, ambient light illuminates the finger, and a large amount of blue light signal is absorbed by the finger, and only a small amount or even no blue light signal penetrates the finger. Therefore, selecting the optical signal of the band other than the blue light signal or the green light signal for filtering can greatly eliminate the interference of the ambient light and improve the sensing accuracy of the photoelectric sensing device 20.
  • the photosensor device 20 is a sensor chip for sensing biometric information.
  • FIG. 11 shows the structure of a photoelectric sensing device 20 according to still another embodiment of the present invention.
  • the photosensor device 20 further includes a package 30 for encapsulating the photosensitive die 24 and all of the devices above the photosensitive die 24, such as The aliasing imaging element 28 and the filter film 23 are packaged.
  • the package can fill the light transmissive region 282 together.
  • FIG. 12 shows the structure of a photosensitive die of an embodiment.
  • the photosensitive die (Die) 24 is a semiconductor integrated circuit device further comprising a substrate 26 on which the plurality of photosensitive pixels 22 are formed.
  • a scan line group and a data line group electrically connected to the photosensitive pixel 22 are formed on the substrate 26, and the scan line group is configured to transmit a scan driving signal to the photosensitive pixel 22 to activate the photosensitive pixel 22 to perform light sensing.
  • the data line group is used to output an electrical signal generated by the photosensitive pixel performing light sensing.
  • the substrate 26 is, for example but not limited to, a silicon substrate or the like.
  • FIG. 13 illustrates the structure of a photoelectric sensing device according to another embodiment of the present invention.
  • the photosensitive pixels 22 are distributed in an array, such as a matrix distribution. Of course, it can also be distributed in other rule manners or in an irregular manner.
  • the scan line group includes a plurality of scan lines 201.
  • the data line group includes a plurality of data lines 202.
  • the plurality of scan lines 201 and the plurality of data lines 202 are disposed to cross each other and disposed between adjacent photosensitive pixels 22.
  • a plurality of scanning lines G1, G2, ..., Gm are arranged at intervals in the Y direction, and a plurality of data lines S1, S2, ..., Sn are arranged at intervals in the X direction.
  • the plurality of scanning lines 201 and the plurality of data lines 202 are not limited to the vertical arrangement shown in FIG. 13 , and may be disposed at an angle, for example, 30°, 60°, or the like.
  • the scan lines 201 and the data lines 202 at the intersections are separated by an insulating material.
  • the distribution and the number of the scan lines 201 and the data lines 202 are not limited to the above-exemplified embodiments, and the corresponding scan line groups and data line groups may be correspondingly set according to the structure of the photosensitive pixels. .
  • a plurality of scan lines 201 are connected to a driving circuit 25, and a plurality of data lines 202 are connected to a signal processing circuit 27.
  • the driving circuit 25 is configured to provide a corresponding scan driving signal and transmit it through the corresponding scan line 201.
  • the corresponding photosensitive pixel 22 is applied to activate the photosensitive pixel 22 to perform light sensing.
  • the driving circuit 25 is formed on the substrate 26, and of course, it can also be electrically connected to the photosensitive pixels 22 through a flexible circuit board, that is, a plurality of scanning lines 201 are connected.
  • the signal processing circuit 27 receives an electrical signal generated by the corresponding photosensitive pixel 22 performing light sensing through the data line 202, and acquires biometric information of the target object based on the electrical signal.
  • the photoelectric sensing device 20 further includes a controller 29 for controlling the driving circuit to output a corresponding scan driving signal, such as, but not limited to, progressively activating the photosensitive pixel 22 to perform light sensing.
  • the controller 29 is further configured to control the signal processing circuit 27 to receive the electrical signal output by the photosensitive pixel 22, and after receiving the electrical signal output by all the photosensitive pixels 22 performing the light sensing, generate biometric information of the target object based on the electrical signal. .
  • processing circuit 27 and the controller 29 may be formed on the substrate 26 or may be electrically connected to the photosensitive die 24 through a flexible circuit board.
  • the photosensitive pixel 22 includes a photosensitive device 220 and a switching device 222.
  • the switching device 222 has a control terminal C and two signal terminals, such as a first signal terminal Sn1 and a second signal terminal Sn2.
  • the control terminal C of the switching device 222 is connected to the scan line 201.
  • the first signal terminal Sn1 of the switching device 222 is connected to a reference signal L via the photosensitive device 220, and the second signal terminal Sn2 of the switching device 222 is connected to the data line 202.
  • the photosensitive pixel 22 illustrated in FIG. 14 is for illustrative purposes only and is not limited to other constituent structures of the photosensitive pixel 22.
  • the above-mentioned photosensitive device 220 is, for example but not limited to, any one or several of a photodiode, a phototransistor, a photodiode, a photo resistor, and a thin film transistor.
  • a photodiode as an example, a negative voltage is applied across the photodiode.
  • the photodiode receives the optical signal, a photocurrent is generated in a proportional relationship with the optical signal, and the received optical signal is more intense. Larger, the larger the photocurrent generated, the faster the voltage drop on the negative pole of the photodiode.
  • the intensity of the optical signal reflected from different parts of the target object is obtained, and the target is obtained. Biometric information of the object. It can be understood that in order to increase the photosensitive effect of the photosensitive device 220, a plurality of photosensitive devices 220 may be disposed.
  • the switching device 222 is, for example but not limited to, any one or several of a triode, a MOS transistor, and a thin film transistor.
  • the switching device 222 can also include other types of devices, and the number can also be two, three, and the like.
  • the photosensitive device 220 having high sensitivity to the blue light signal may also be selected.
  • the light sensing is performed by selecting the photosensitive device 220 having high sensitivity to the blue light signal and the green light signal, so that the photosensitive device 220 is more sensitive to the light of the blue light signal and the green light signal, and thus the ambient light is also avoided to some extent. Interference caused by red light signals, thereby improving The sensing accuracy of the photoelectric sensing device 20 is obtained.
  • the gate of the thin film transistor TFT serves as the control terminal C of the switching device 222, and the source and the drain of the thin film transistor TFT correspond to the first signal terminal Sn1 of the switching device 222 and The second signal terminal Sn2.
  • the gate of the thin film transistor TFT is connected to the scanning line 201, the source of the thin film transistor TFT is connected to the negative electrode of the photodiode D1, and the drain of the thin film transistor TFT is connected to the data line 202.
  • the anode of the photodiode D1 is connected to a reference signal L, which is, for example, a ground signal or a negative voltage signal.
  • a scan driving signal is applied to the gate of the thin film transistor TFT through the scan line 201 to drive the thin film transistor TFT to be turned on.
  • the data line 202 is connected to a positive voltage signal.
  • the positive voltage signal on the data line 202 is applied to the negative electrode of the photodiode D1 via the thin film transistor TFT. Since the positive electrode of the photodiode D1 is grounded, the photoelectric A reverse voltage is applied across diode D1 such that photodiode D1 is reverse biased, i.e., in operation.
  • the reverse current of the photodiode D1 rapidly increases, thereby causing a change in current on the photodiode D1, which can be obtained from the data line 202. Since the intensity of the optical signal is larger, the reverse current generated is larger. Therefore, according to the current signal acquired on the data line 202, the intensity of the optical signal can be obtained, thereby obtaining the biometric information of the target object.
  • the reference signal L may be a positive voltage signal, a negative voltage signal, a ground signal, or the like. As long as the electrical signal provided on the data line 202 and the reference signal L are applied across the photodiode D1 such that a reverse voltage is formed across the photodiode D1 to perform photo sensing, it is within the scope of protection defined by the present invention.
  • connection manner of the thin film transistor TFT and the photodiode D1 in the photosensitive pixel 22 is not limited to the connection mode shown in FIG. 14, and may be other connection methods.
  • the gate G of the thin film transistor TFT is connected to the scanning line 201
  • the drain D of the thin film transistor TFT is connected to the anode of the photodiode D1
  • the source S of the thin film transistor TFT is connected to the data line 202.
  • the negative terminal of the photodiode D1 is connected to a positive voltage signal.
  • FIG. 16 shows a partial structure of an OLED panel in which the display screen is an embodiment.
  • the display 10 as an OLED display as an example, the display 10 further includes a transparent substrate 101.
  • the display pixel 12 includes an anode 102 formed on a transparent substrate 101, a light-emitting layer 103 formed on the anode 102, and a cathode 104 formed on the light-emitting layer 103.
  • the anode 102 and cathode 104 are made of a conductive material.
  • the anode 102 is made of a suitable conductive material such as indium tin oxide (ITO), which is made of a suitable conductive material such as metal or ITO. to make.
  • ITO indium tin oxide
  • the display screen 10 is not limited to an OLED display, but may be other suitable types of displays.
  • the display screen 10 can be a hard screen of a rigid material or a flexible screen of a flexible material.
  • the OLED display panel of the embodiment of the present invention may be a bottom emission type device, a top emission type device, or other display device of a suitable structure type.
  • FIG. 17 shows an opposite structure of a photosensitive device and a display pixel in a photosensitive pixel according to an embodiment.
  • the display pixel 12 is, for example but not limited to, three display pixels of a red pixel R, a green pixel G, and a blue pixel B, wherein
  • the luminescent layer in the red pixel R is a luminescent material that emits a red light signal
  • the luminescent layer in the green pixel G is a luminescent material that emits a green light signal
  • the luminescent layer in the blue pixel B is a luminescent material that emits a blue light signal.
  • the display screen 10 can also be displayed by other display technologies, such as color conversion technology, which utilizes the light emitted by the blue OLED to absorb the red, green, and blue light signals after being absorbed by the fluorescent dye.
  • color conversion technology which utilizes the light emitted by the blue OLED to absorb the red, green, and blue light signals after being absorbed by the fluorescent dye.
  • the display pixels 12 in the display screen 10 are not limited to the arrangement shown in FIG. 17, and may have other arrangements, such as a pentiel arrangement.
  • the display screen 10 further includes a driving circuit for driving the display pixels 12 to emit light and a corresponding driving circuit (not shown), and the driving circuit and the corresponding driving circuit can be disposed between the display pixels 12, It can be disposed below each display pixel 12.
  • the area where the display pixel, the driving circuit and the corresponding driving line are set is the opaque area, and the remaining area is the light transmitting area.
  • Photosensitive device 220 is located below the light transmissive region for better light sensing. It can be understood that the light transmissive area and the opaque area in the display screen 10 are not strictly limited, and whether the light transmission is determined by the composition of the display screen 10 and the distribution of the constituent structures. For example, when the structure in which the display pixels 12 are formed adopts a transparent structure, the area in which the display pixels are disposed will become a light-transmitting area.
  • a gap H is provided between adjacent display pixels, and the gap H has a light-transmitting region.
  • the photosensitive device 220 in the photosensitive pixel 22 is disposed below the gap H between adjacent display pixels.
  • the lower part here is, for example but not limited to, directly below, and it is possible to ensure that sufficient light signals are received at the position. It can be understood that the more the optical signal passes through the gap H, the higher the sensing accuracy of the photoelectric sensing device 20.
  • FIG. 18 shows the structure of another embodiment of an electronic device.
  • the front side of the electronic device 100 includes a first display area 110 and a second display area 120, wherein the first display area 110 occupies most of the area of the entire display area of the front side for displaying a higher resolution image of the electronic device;
  • the display area 120 is located at a mid-lower position of the front side and occupies a small portion of the entire display area for displaying lower resolution images of the electronic device, such as virtual buttons, navigation bars, prompt information, and the like.
  • the photoelectric sensing device 20 is disposed corresponding to the second display area 120 to perform light sensing on the target object placed on the second display area 120 to obtain biometric information of the target object.
  • the first display area 110 and the second display area 120 are not limited to The distribution structure shown in FIG. 18 can be flexibly set according to the actual use requirements of the electronic device.
  • the first display area 110 includes a plurality of first display pixels
  • the second display area 120 includes a plurality of second display pixels
  • the first gap ratio between adjacent second display pixels is large. Therefore, when the photosensitive device 220 is disposed corresponding to the second gap, more light signals are passed through the second gap, thereby improving the sensing accuracy of the photoelectric sensing device 20.

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Abstract

一种电子设备，包括一显示屏（10）以及位于所述显示屏（10）下方的光电传感装置（20），所述显示屏（10）包括多个显示像素（12），且相邻的显示像素（12）之间具有间隙；所述光电传感装置（20）包括衬底（26）及设置于所述衬底（26）上的多个感光器件（220），且所述感光器件（220）对应位于所述间隙的下方。

Description

电子设备 技术领域
本实用新型涉及一种能够实现感测的电子设备。
背景技术
目前，生物信息传感器，尤其是指纹识别传感器，已逐渐成为移动终端等电子产品的标配组件。由于光学式指纹识别传感器比电容式指纹识别传感器具有更强的穿透能力，因此有人提出一种应用于移动终端的光学式指纹识别模组。如图1所示，该光学式指纹识别模组包括光学式指纹传感器400和光源402。其中，该光学式指纹传感器400设置于移动终端的保护盖板401下方。该光源402临近该光学式指纹识别传感器400的一侧设置。当用户的手指F接触保护盖板401时，光源402发出的光信号穿过保护盖板401并到达手指F，经过手指F的谷和脊的反射后，被光学式指纹识别传感器400接收，并形成手指F的指纹图像。
然，上述光学式指纹识别模组适用于对应移动终端的非显示区设置，因此有必要提出一种可对应移动终端的显示区设置的指纹识别传感装置。
实用新型内容
本实用新型实施方式旨在至少解决现有技术中存在的技术问题之一。为此，本实用新型实施方式需要提供一种电子设备。
本实用新型实施方式的一种电子设备，包括一显示屏以及位于所述显示屏下方的光电传感装置，所述显示屏包括多个显示像素，且相邻的显示像素之间具有间隙；所述光电传感装置包括衬底及设置于所述衬底上的多个感光器件，且所述感光器件对应位于所述间隙的下方。
本实用新型实施方式的电子设备具有如下优点：
一、本实用新型实施方式的电子设备通过将光电传感装置设置于显示屏下方，不但实现了对电子设备的显示区域中的目标物体进行生物特征信息感测，而且利用显示屏发出的光信号实现目标物体的生物特征信息感测，从而不需要额外设置光源，降低了电子设备的感测成本。而且，由于光电传感装置位于显示屏下方，因此不会影响电子设备的 正常显示。
二、由于该光电传感装置设置于电子设备的显示屏下方，不但实现了从电子设备中正面获取目标物体的图像信息，而且还使得电子设备正面的屏占比可以足够大，有利于电子设备朝全屏显示的方向发展。
三、利用相邻的显示像素之间的间隙存在透光区域的特性，将感光器件设置于该透光区域下方，从而使得感光器件接收穿过该透光区域的光信号，进行生物特征信息感测。如此，不需要对显示屏的结构做出改进，利用现有的显示屏结构，即可实现对目标物体的生物特征信息感测，不但降低了电子设备的成本，而且还保证了目标物体的感测精度。
在某些实施方式中，所述间隙内形成透光区域。
在某些实施方式中，所述感光器件位于所述间隙的正下方，以接收穿过所述间隙的光信号。如此，可以保证穿过所述间隙的光信号中足够多的光信号被感光器件接收，从而提高了光电传感装置的感测精度。
在某些实施方式中，所述显示屏包括OLED显示屏。
在某些实施方式中，所述显示像素包括红色、绿色、蓝色三种显示像素。
在某些实施方式中，所述感光器件呈阵列分布于所述衬底靠近所述显示屏的一侧。
在某些实施方式中，所述光电传感装置进一步包括抗混叠成像元件，所述抗混叠成像元件设于设有所述感光器件的衬底上，用于防止相邻的感光器件之间接收到的光信号产生混叠。
通过设有感光器件的衬底上设置抗混叠成像元件，使得相邻的感光器件之间接收到的光信号不会发生混叠，因此执行光感测后获得的图像较清晰，从而提高了感测精度。
在某些实施方式中，所述抗混叠成像元件包括吸光墙以及由吸光墙围成的多个透光区域。
在某些实施方式中，所述多个透光区域均匀分布。均匀分布的透光区域使得抗混叠成像元件的制备工艺更加简单。
在某些实施方式中，所述吸光墙包括多个交替层叠设置的吸光块和垫高块。由于每个吸光块的厚度比吸光墙的厚度小，因此刻蚀形成透光区域的工艺相对较容易，如此使得抗混叠成像元件的工艺较容易，而且还能保证透光区域的透光性能。另外，通过垫高块与吸光块层叠设置形成吸光墙，加快了抗混叠成像元件的制程，而且保证了抗混叠成像元件的抗混叠效果。
在某些实施方式中，所述垫高块为透明材料制成。
在某些实施方式中，所述透光区域内填充透明材料。通过透光区域内填充透明材料， 不但增加抗混叠成像元件的强度，也可避免杂质进入透光区域内而影响透光效果。
在某些实施方式中，所述抗混叠成像元件包括多层交替层叠设置的吸光层和透明支撑层；所述吸光层包括多个间隔设置的吸光块；所述透明支撑层由透明材料填充形成，且一并填充所述吸光块之间的间隔；其中所述间隔对应的区域形成透光区域。
在某些实施方式中，所述每一层透明支撑层的厚度不相等。通过透明支撑层的设置，不但加快了抗混叠成像元件的制备速度，而且通过相邻的两层吸光层之间的距离设置，也可以保证抗混叠成像元件的抗混叠效果。
在某些实施方式中，所述透明支撑层的厚度逐层增大。
通过对透明支撑层的厚度设置，避免了相对感光裸片垂直方向偏移预设角度范围外的光信号穿过抗混叠成像元件，从而提高了抗混叠成像元件的抗混叠效果。
在某些实施方式中，所述光电传感装置进一步包括滤光膜，所述滤光膜设于所述抗混叠成像元件远离所述衬底的一侧，或者所述滤光膜设于抗混叠成像元件与所述感光器件之间。
在某些实施方式中，所述滤光膜用于将蓝色或绿色光信号以外的光信号滤除。
通过滤光膜的设置，使得环境光中的干扰信号能有效地滤除，从而提高了感测精度。
在某些实施方式中，所述光电传感装置进一步包括封装体，所述封装体用于将所述衬底、以及所述衬底上的感光器件、抗混叠成像元件以及滤光膜进行封装。
在某些实施方式中，所述显示屏对应或正对所述光电传感装置的区域为感测区，且所述感测区位于显示屏的显示区的中下位置处。如此，将方便用户操作。
在某些实施方式中，所述光电传感装置为感光芯片，用于感测生物特征信息。
在某些实施方式中，所述光电传感装置为指纹传感装置。
本实用新型实施方式的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本实用新型实施方式的实践了解到。
附图说明
本实用新型实施方式的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是现有技术的一种应用于电子设备的光学感测结构的示意图；
图2是应用本实用新型光电传感装置的电子设备一实施方式的正面结构示意图；
图3是图2中的电子设备沿I-I线的剖面结构示意图，其中仅示出了电子设备的部 分结构；
图4是本实用新型一实施方式的光电传感装置的局部结构示意图；
图5是图4示出的光电传感装置中一实施方式的抗混叠成像元件能穿过的光信号范围示意图；
图6是本实用新型一实施方式的抗混叠成像元件的局部结构示意图；
图7是本实用新型另一实施方式的抗混叠成像元件的局部结构示意图；
图8是图6所示的抗混叠成像元件的制备过程示意图；
图9是本实用新型又一实施方式的抗混叠成像元件的局部结构示意图；
图10是本实用新型另一实施方式的光电传感装置的局部结构示意图；
图11是本实用新型又一实施方式的光电传感装置的结构示意图。
图12是本实用新型一实施方式的感光裸片的局部结构示意图；
图13是本实用新型又一实施方式的光电传感装置的结构框图；
图14是本实用新型一实施方式的感光像素的电路结构示意图；
图15是本实用新型另一实施方式的感光像素的电路结构示意图；
图16是本实用新型一实施方式的显示屏的结构示意图；
图17是本实用新型一实施方式的显示屏中显示像素和光电传感装置中感光器件的相对位置关系示意图；
图18是应用本实用新型光电传感装置的电子设备另一实施方式的正面结构示意图。
具体实施方式
下面详细描述本实用新型的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本实用新型，而不能理解为对本实用新型的限制。
在本实用新型的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本实用新型的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“接触”或“触摸”包括直接接触或间接接触。例如，下文中揭示的光电传感装置，其被设置在电子设备的内部，例如显示屏的下方，则用户手指通过保护盖板以及显示屏间接接触该光电传感装置。
在本实用新型的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通信；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本实用新型中的具体含义。
下文的公开提供了许多不同的实施方式或例子用来实现本实用新型的不同结构。为了简化本实用新型的公开，下文中对特定例子的部件和设定进行描述。当然，它们仅仅为示例，并且目的不在于限制本实用新型。此外，本实用新型可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设定之间的关系。此外，本实用新型提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
进一步地，所描述的特征、结构可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本实用新型的实施方式的充分理解。然而，本领域技术人员应意识到，没有所述特定细节中的一个或更多，或者采用其它的结构、组元等，也可以实践本实用新型的技术方案。在其它情况下，不详细示出或描述公知结构或者操作以避免模糊本实用新型。
本实用新型实施方式提出一种设置于电子设备内的光电传感装置，尤其设置于电子设备的显示屏下方。该显示屏例如但不限于OLED显示面板等具有发出光信号的显示装置。电子设备工作时，显示屏发出光信号，以实现相应的显示效果。此时，若有目标物体触摸该电子设备，显示屏发出的光信号到达目标物体后发生反射，反射回来的光信号穿过显示屏后被光电传感装置接收，光电传感装置将接收到的光信号转换为与光信号对应的电信号。根据该光电传感装置产生的电信号，可获得目标物体的预定生物特征信息。
上述电子设备例如但不局限为消费性电子产品、家居式电子产品、车载式电子产品、金融终端产品等合适类型的电子产品。其中，消费性电子产品如为手机、平板电脑、笔记本电脑、桌面显示器、电脑一体机等。家居式电子产品如为智能门锁、电视、冰箱、穿戴式设备等。车载式电子产品如为车载导航仪、车载DVD等。金融终端产品如为ATM机、自助办理业务的终端等。以下实施例是以手机类的移动终端为例进行描述，但如前所述，以下各实施例也可适用于其它合适的电子产品，并不局限于手机类的移动终端。
上述目标物体的预定生物特征信息(或为：图像信息)例如但不限于指纹、掌纹、耳纹、脚掌等皮肤纹路信息，以及心率、血氧浓度、静脉、动脉等其它合适的生物特征信 息。该预定生物特征信息可为前述列举的信息中的任意一种或几种。该目标物体例如但不限于人体，也可以为其它合适类型的生物体。
请参照图2以及图3，图2示出了应用本实用新型光电传感装置的电子设备一实施方式的正面结构，图3示出了图2中的电子设备沿I-I线的局部剖面结构，而且图3仅示出了电子设备的部分结构。本实用新型实施方式的光电传感装置20应用于一移动终端100，该移动终端100的正面设有一显示屏10，该显示屏10上方设有保护盖板30。可选地，该显示屏10的屏占比较高，例如80％以上。屏占比是指显示屏10的显示区域S1占移动终端100的正面区域的比例。该光电传感装置20对应设置在该显示屏10的下方，对应该显示屏10的显示区域S1的局部区域设置。定义该移动终端100的正面对应或正对该光电传感装置20的区域为感测区S2。该光电传感装置20用于感测接触或接近该感测区S2上方的目标物体的预定生物特征信息。可以理解的是，该光电传感装置20也可以设置于保护盖板30下方，且位于移动终端100的正面非显示区域。
该感测区S2可为显示区上的任一位置。例如，该感测区S2对应该显示屏10的显示区的中下位置处设置。可以理解地是，该感测区S2对应该显示屏10的中下位置处设置是为了方便用户进行操作。例如，当用户手持移动终端100时，用户的大拇指可方便触摸该感测区S2的位置。当然，该感测区S2也可以放置于用户方便触摸的其它合适位置。
当移动终端100处于亮屏状态、且处于生物特征信息感测模式时，该显示屏10发出光信号。当一物体接触或接近该感测区S2时，该光电传感装置20接收由该物体反射回来的光线，转换接收到的光线为相应的电信号，并根据该电信号获取该物体的预定生物特征信息，例如，指纹图像信息。从而，该光电传感装置20可实现对接触或接近显示区上方的局部区域的目标物体进行生物特征信息感测。
请参照图4，图4示出了本实用新型一实施方式的光电传感装置20的局部结构。该光电传感装置20包括一感光裸片24，且该感光裸片24包括多个感光像素22。感光像素22用于接收上方来的光信号，并将接收到的光信号转换为相应的电信号。该感光裸片24上设有抗混叠成像元件28，抗混叠成像元件28用于防止相邻的感光像素22之间接收到的光信号发生混叠。
由于目标物体不同部位对光信号的反射存在差异，而且目标物体表面的不平整，目标物体有些部位与保护盖板30(见图3)接触，有些部位与保护盖板30未接触，从而造成接触的位置发生漫反射，未接触的位置发生镜面反射，因此相邻的感光像素22之间感测到的光信号会存在混叠，从而造成获取的感测图像模糊。对此，本实用新型实施 方式在感光裸片24上设置一抗混叠成像元件28，因此感光像素22执行光感测后获得的图像较清晰，从而提高了光电传感装置20的感测精度。
在某些实施方式中，抗混叠成像元件28具有吸光特性，照射到抗混叠成像元件28上的光信号中，只有与所述感光裸片24近似垂直的光信号才能穿过抗混叠成像元件28并被感光像素22接收，其余的光信号则均被抗混叠成像元件28吸收。如此，可以防止相邻的感光像素22之间接收的光信号产生混叠。需要说明的是，与感光裸片24近似垂直的光信号包括垂直于所述感光裸片24的光信号，以及相对所述感光裸片24的垂直方向偏移预设角度范围内的光信号。该预设角度范围为±20°内。
具体地，该抗混叠成像元件28包括吸光墙281和由吸光墙281围合成的多个透光区域282。吸光墙281由吸光材料形成。该吸光材料包括金属氧化物、炭黑涂料、黑色油墨等。其中，金属氧化物中的金属例如但不限于铬(Cr)、镍(Ni)、铁(Fe)、钽(Ta)、钨(W)、钛(Ti)、钼(Mo)的一种或几种。透光区域282的延伸方向为与感光裸片24垂直的方向，以使照射到抗混叠成像元件28的光信号中，与感光裸片24近似垂直的方向上的光信号可以穿过透光区域282，其余的光信号则被吸光墙281吸收。
在某些实施方式中，如图5所示，图5示出了穿过抗混叠成像元件28的光信号范围。由于抗混叠成像元件28的吸光特性，只有光信号L1和光信号L2之间的光信号可以通过透光区域282到达感光像素22，其余的光信号均被抗混叠成像元件28的吸光墙281吸收。由图5可知，透光区域282的横截面积越小，通过透光区域282的光信号的角度α的范围越小，因此抗混叠成像元件28的抗混叠效果越好。如此，通过抗混叠成像元件28设置的较小面积的透光区域282，能提高抗混叠成像元件28的抗混叠效果。另外，由于抗混叠成像元件28的透光区域282的横截面积较小，因此每一感光像素22将对应多个透光区域282，从而使得感光像素22能感测到足够的光信号，提高了光电传感装置20的感测精度。
进一步地，请参照图6，图6示出了本实用新型一实施方式的抗混叠成像元件28的结构。吸光墙281为多层结构，且该吸光墙包括交替层叠设置的吸光块281a和垫高块281b。一实施方式中，该吸光块281a由吸光材料形成。该吸光材料例如但不限于金属氧化物、炭黑涂料、黑色油墨等。其中，金属氧化物中的金属例如但不限于铬(Cr)、镍(Ni)、铁(Fe)、钽(Ta)、钨(W)、钛(Ti)、钼(Mo)的一种或几种。垫高块281b例如但不限于由透明材料形成的透明层，例如半透明材料、吸光材料等。
在某些实施方式中，位于同一层的多个吸光块281a间隔设置，且该同一层中各吸光块281a之间的间隔所对应的区域为透光区域282。进一步地，同一层的多个吸光块 281a以及多个垫高块281b可以一次制成。具体地，通过提供一掩膜，所述掩膜为一体成型的膜片，且该膜片对应吸光块281a的位置形成开孔，且该开孔的形状与大小与吸光块283的形状大小一致。通过该掩膜依次在一承载物上蒸镀形成交替设置的吸光块281a以及垫高块281b，从而形成抗混叠成像元件28。
通过垫高块281b的设置，不但加快了抗混叠成像元件28的制程，而且通过垫高块281b的高度设置，能保证抗混叠成像元件28的抗混叠效果。
在某些实施方式中，上述透光区域282内均可以填充透明材料，以增加抗混叠成像元件层的强度，也可避免杂质进入透光区域282内而影响透光效果。为了保证透光区域282的透光效果，透明材料可以选用透光率较大的材料，例如玻璃、PMMA(亚克力)、PC(聚碳酸酯)等等。
在某些实施方式中，请参照图7，图7示出了本实用新型另一实施方式的抗混叠成像元件的结构。该抗混叠成像元件28为多层结构，且该抗混叠成像元件28包括交替层叠设置的吸光层283和透明支撑层284；所述吸光层283包括多个间隔设置的吸光块283a；所述透明支撑层284由透明材料填充形成，且一并填充所述吸光块283a之间的间隔283b；其中所述间隔283b对应的区域形成所述透光区域282。
进一步地，请参照图8，图8示出了本实用新型一实施方式的抗混叠成像元件的制备过程。具体地，在制备抗混叠成像元件28时，在一承载物上先涂覆一层吸光材料，并在吸光材料层上将透光区域282对应的部分刻蚀掉，未被蚀刻的部分形成多个吸光块283a。该刻蚀技术例如但不局限于光刻蚀、X射线刻蚀、电子束刻蚀和离子束刻蚀。而且刻蚀类型可包括干法刻蚀和湿法刻蚀两种。然后，在蚀刻后的吸光块283上涂覆一层透明材料，且该透明材料不但覆盖多个吸光块283a，还一并填充多个吸光块283a之间的间隔283b，从而形成透明支撑层284。然后，按照吸光层283的形成方式在透明支撑层284上形成多个吸光块283a，依次类推形成多层交替层叠的吸光层283和透明支撑层284，从而形成抗混叠成像元件28。
进一步地，为了保证透光区域282的透光效果，形成透明支撑层284的透明材料可以选用透光率较大的材料，例如玻璃、PMMA(亚克力)、PC(聚碳酸酯)、环氧树脂等。
在某些实施方式中，请参照图9，图9示出了本实用新型另一实施方式的抗混叠成像元件的结构。该抗混叠成像元件28包括交替层叠设置的吸光层283和透明支撑层284，且每层透明支撑层284的厚度不相等。即图7中厚度h1、h2和h3的值不相等。可选地，该透明支撑层284的厚度逐层增大，即h1<h2<h3。如此可以避免相对感光裸片24垂直方向偏移±20°以外的光信号穿过吸光块283a之间的透明支撑层284，从而提高了 光电传感装置20的感测精度。需要说明的是，每层透明支撑层284的厚度参数，以及吸光块283a的宽度和高度参数，可进行不同的设置以及多种设置组合方式，来提高光电传感装置20的感测精度。
在某些实施方式中，抗混叠成像元件28直接形成于感光裸片24上，即上述抗混叠成像元件28形成时的承载物为设有感光像素22的感光裸片24。然，可变更地，该抗混叠成像元件28例如独立制成后再设置于设有感光像素22的感光裸片24上，从而加快了光电传感装置20的制程。
在某些实施方式中，抗混叠成像元件28中多个透光区域282均匀分布，从而使得抗混叠成像元件28的制备工艺较简单。而且，该抗混叠成像元件28例如可为一体成型的薄膜，独立制成后再贴合于感光裸片24上，从而加快了光电传感装置20的制程。
在某些实施方式中，以目标物体为手指为例，当手指位于保护盖板30时，若有环境光照射于手指上，而手指具有很多组织结构，例如表皮、骨头、肉、血管等，因此环境光中的部分光信号会穿透手指，部分光信号则被手指吸收。穿透手指的光信号将向手指下方的保护盖板30传输并到达光电传感装置20，此时光电传感装置20不但感测到经目标物体反射回来的光信号，还感测到环境光穿透手指的光信号，如此无法进行准确地感测。因此，为了避免环境光影响光电传感装置20对目标物体F的生物特征信息感测，如图10所示，图10示出了本实用新型另一实施方式的光电传感装置20的结构。该感光裸片24上设有滤光膜23，即滤光膜23设置于感光裸片24与抗混叠成像元件28之间。该滤光膜23用于将预设波段以外的光信号进行过滤。本实施方式中，该预设波段以外的光信号为环境光形成的干扰信号，即环境光中能穿透手指的光信号。通过该滤光膜23，将反射回来的光信号中的干扰信号滤除，从而提高了光电传感装置20的感测精度。然，可变更地，该滤光膜23还可以设置于抗混叠成像元件28上，即滤光膜23设于抗混叠成像元件28远离感光裸片24的一侧。
在某些实施方式中，预设波段的光信号以外的光信号为环境光中较长波段的光信号，因为较长波段的光信号可以穿透目标物体，而较短波段的光信号则被目标物体吸收。因此通过对环境光中较长波段的光信号进行滤除，就能滤除环境光中穿透手指的光信号，达到消除环境光的干扰信号的目的。
在某些实施方式中，预设波段为蓝色光信号对应的波段，即滤光膜23将蓝色光信号以外的光信号滤除。
在某些实施方式中，预设波段为绿色光信号对应的波段，即滤光膜23将绿色光信号以外的光信号滤除。
在环境光的红色光信号、蓝色光信号以及绿色光信号中，手指等目标物体对红色光信号的吸收最弱，其次是绿色光信号，对蓝色光信号的吸收最强。即环境光照射于手指上，大量的蓝色光信号被手指吸收，只有少量的，甚至没有蓝色光信号穿透手指。因此，选择蓝色光信号或绿色光信号以外波段的光信号进行过滤，可以大大消除环境光的干扰，提高光电传感装置20的感测精度。
在某些实施方式中，所述光电传感装置20为一感光芯片，用于感测生物特征信息。
在某些实施方式中，请参照图11，图11示出了本实用新型又一实施方式的光电传感装置20的结构。在某些实施方式中，所述光电传感装置20进一步包括一封装体30，所述封装体用于将所述感光裸片24以及所述感光裸片24上方的所有器件进行封装，例如抗混叠成像元件28以及滤光膜23进行封装。尤其地，当抗混叠成像元件28位于该滤光膜23上方时，该封装体可以一并填充透光区域282。
请参照图12，图12示出了一实施方式的感光裸片的结构。该感光裸片(Die)24为一半导体集成电路器件，其进一步包括一衬底26，该多个感光像素22形成在该衬底26上。另外，该衬底26上例如还形成有与感光像素22电性连接的扫描线组和数据线组，扫描线组用于传输扫描驱动信号给感光像素22，以激活感光像素22执行光感测，数据线组用于将感光像素执行光感测而产生的电信号输出。该衬底26例如但不限于硅基板等。
具体地，在某些实施方式中，请参照图13，图13示出了本实用新型另一实施方式的光电传感装置的结构。感光像素22呈阵列分布，例如矩阵分布。当然，也可以为其他规则方式分布或非规则方式分布。扫描线组包括多条扫描线201，数据线组包括多条数据线202，多条扫描线201与多条数据线202相互交叉设置，且设置在相邻的感光像素22之间。例如，多条扫描线G1、G2…Gm沿Y方向间隔布设，多条数据线S1、S2…Sn沿X方向间隔布设。然，可变更地，该多条扫描线201与多条数据线202不限定图13中示出的垂直设置，也可以呈一定角度的设置，例如30°、60°等。另外，由于扫描线201和数据线202的导电性，因此处于交叉位置的扫描线201和数据线202之间通过绝缘材料进行隔离。
需要说明的是，上述扫描线201和数据线202的分布以及数量的设置并不局限于上述例举的实施方式，可以根据感光像素的结构的不同而对应设置相应的扫描线组和数据线组。
进一步地，多条扫描线201均连接一驱动电路25，多条数据线202均连接一信号处理电路27。驱动电路25用于提供相应的扫描驱动信号，并通过对应的扫描线201传输 给相应的感光像素22，以激活该感光像素22执行光感测。该驱动电路25形成在衬底26上，当然也可以通过柔性电路板与感光像素22电性连接，即连接多条扫描线201。信号处理电路27通过数据线202接收相应的感光像素22执行光感测而产生的电信号，并根据该电信号来获取目标物体的生物特征信息。
在某些实施方式中，光电传感装置20还包括一控制器29，该控制器29用于控制驱动电路输出相应的扫描驱动信号，例如但不局限于逐行激活感光像素22执行光感测。该控制器29还用于控制信号处理电路27接收感光像素22输出的电信号，并在接收执行光感测的所有感光像素22输出的电信号后，根据该电信号生成目标物体的生物特征信息。
进一步地，上述处理电路27以及控制器29可形成在衬底26上，也可通过柔性电路板与感光裸片24电性连接。
在某些实施方式中，如图14所示，示出了一个感光像素22的具体结构。该感光像素22包括一感光器件220和一开关器件222。该开关器件222具有一控制端C以及两信号端，例如第一信号端Sn1和第二信号端Sn2。其中，开关器件222的控制端C与扫描线201连接，开关器件222的第一信号端Sn1经感光器件220连接一参考信号L，开关器件222的第二信号端Sn2与数据线202连接。需要说明的是，图14示出的感光像素22仅用于举例说明，并不限于感光像素22的其他组成结构。
具体地，上述感光器件220例如但不限于光敏二极管、光敏三极管、光电二极管、光电阻、薄膜晶体管的任意一个或几个。以光电二极管为例，通过在光电二极管的两端施加负向电压，此时，若光电二极管接收到光信号时，将产生与光信号成一定比例关系的光电流，接收到的光信号强度越大，产生的光电流则越大，光电二极管负极上的电压下降的速度也就越快，因此通过采集光电二极管负极上的电压信号，从而获得目标物体不同部位反射的光信号强度，进而获得目标物体的生物特征信息。可以理解的是，为了增大感光器件220的感光效果，可以设置多个感光器件220。
进一步地，开关器件222例如但不限于三极管、MOS管、薄膜晶体管中的任意一个或几个。当然，该开关器件222也可以包括其他类型的器件，数量也可以为2个、3个等。
在某些实施方式中，为了进一步提高光电传感装置20的感测精度，也可以选择对蓝色光信号的感光灵敏度高的感光器件220。通过选择对蓝色光信号和绿色光信号的感光灵敏度高的感光器件220执行光感测，使得该感光器件220对蓝色光信号和绿色光信号的感光更灵敏，因此一定程度上也避免了环境光中红色光信号造成的干扰，从而提高 了光电传感装置20的感测精度。
以图14示出的感光像素22结构为例，该薄膜晶体管TFT的栅极作为开关器件222的控制端C，薄膜晶体管TFT的源极和漏极对应作为开关器件222的第一信号端Sn1和第二信号端Sn2。薄膜晶体管TFT的栅极与扫描线201连接，薄膜晶体管TFT的源极与光电二极管D1的负极连接，薄膜晶体管TFT的漏极与数据线202连接。光电二极管D1的正极连接参考信号L，该参考信号L例如为地信号或负电压信号。
在上述感光像素22执行光感测时，通过扫描线201给薄膜晶体管TFT的栅极施加一扫描驱动信号，以驱动薄膜晶体管TFT导通。此时，数据线202连接一正电压信号，当薄膜晶体管TFT导通后，数据线202上的正电压信号经薄膜晶体管TFT施加至光电二极管D1的负极，由于光电二极管D1的正极接地，因此光电二极管D1两端将施加一反向电压，使得光电二极管D1处于反向偏置，即处于工作状态。此时，当有光信号照射到该光电二极管D1时，光电二极管D1的反向电流迅速增大，从而引起光电二极管D1上的电流变化，该变化的电流可以从数据线202上获取。由于光信号的强度越大，产生的反向电流也越大，因此根据数据线202上获取到的电流信号，可以获得光信号的强度，进而获得目标物体的生物特征信息。
在某些实施方式中，上述参考信号L可以为正电压信号、负电压信号、地信号等。只要数据线202上提供的电信号与该参考信号L施加在光电二极管D1两端，使得光电二极管D1两端形成反向电压，以执行光感测，均在本实用新型限定的保护范围内。
可以理解的是，上述感光像素22中薄膜晶体管TFT和光电二极管D1的连接方式并不局限于图14示出的连接方式，也可以为其他连接方式。例如，如图15所示，薄膜晶体管TFT的栅极G与扫描线201连接，薄膜晶体管TFT的漏极D与光电二极管D1的正极连接，薄膜晶体管TFT的源极S与数据线202连接。光电二极管D1的负极连接正电压信号。
请参照图16，图16示出了显示屏为一实施方式的OLED屏的局部结构。以显示屏10为OLED显示屏为例，该显示屏10进一步包括透明基板101。该显示像素12包括形成在透明基板101上的阳极102、形成在阳极102上的发光层103、和形成在发光层103的阴极104。当阳极102与阴极104上对应施加电压信号时，聚集在阳极102与阴极104上的大量载流子将向发光层103移动并进入发光层103，从而激发发光层103发出相应的光信号。
在某些实施方式中，该阳极102和阴极104由导电材料制成。例如，该阳极102由氧化铟锡(ITO)等合适的导电材料制成，该阴极104由金属或ITO等合适的导电材料制 成。该显示屏10并不局限为OLED显示屏，也可为其它合适类型的显示屏。另外，该显示屏10可以为刚性材质的硬屏，也可以为柔性材质的柔性屏。而且，本实用新型实施方式的OLED显示屏可以为底发射型器件、顶发射型器件或其它合适结构类型的显示器件。
参照图17，图17示出了一实施方式的感光像素中感光器件与显示像素的相对结构，显示像素12例如但不限于红色像素R、绿色像素G和蓝色像素B三种显示像素，其中红色像素R中的发光层采用发出红色光信号的发光材料，绿色像素G中的发光层采用发出绿色光信号的发光材料，蓝色像素B中的发光层采用发出蓝色光信号的发光材料。当然，上述显示屏10还可以采用其他显示技术实现显示，例如色转换技术，利用蓝光OLED发出的光利用荧光染料吸收后再转放出红色、绿色、蓝色的光信号。需要说明的是，显示屏10中的显示像素12并不局限于图17示出的排列方式，还可以有其他的排列方式，例如pentiel排列方式等。
进一步地，显示屏10还包括驱动各显示像素12发光的驱动电路和相应的驱动线路(图中未示出)，而且该驱动电路和相应的驱动线路可以设置于各显示像素12之间，也可以设置于各显示像素12下方。为了更好的显示效果，设置显示像素、驱动电路和相应的驱动线路的区域为不透光区域，其余的区域则为透光区域。而感光器件220则位于该透光区域下方，以便进行更好地光感测。可以理解的是，显示屏10中的透光区域和不透光区域并没有严格的限制，是否透光由显示屏10的组成结构以及组成结构的分布来决定。例如，当形成显示像素12的结构采用透明结构时，设置显示像素的区域将变为透光区域。
请继续参照图17，相邻的显示像素之间设有间隙H，且该间隙H内具有透光区域。感光像素22中的感光器件220对应设置于相邻的显示像素之间的间隙H的下方。这里的下方例如但不限于正下方，能保证足够的光信号被接收到的位置均可。可以理解的是，若穿过该间隙H的光信号越多，则光电传感装置20的感测精度越高。
在某些实施方式中，请参照图18，图18示出了电子设备的另一实施方式的结构。该电子设备100的正面包括第一显示区110和第二显示区120，其中第一显示区110占正面整个显示区域的大部分面积，用于显示电子设备的较高分辨率的图像；第二显示区120位于正面的中下位置且占整个显示区域的小部分面积，用于显示电子设备的较低分辨率的图像，例如虚拟按钮、导航栏、提示信息等等。上述光电传感装置20对应于第二显示区120设置，以对放置于第二显示区120上的目标物体执行光感测，获得该目标物体的生物特征信息。需要说明的是，该第一显示区110和第二显示区120并不局限于 图18示出的分布结构，可以根据电子设备的实际使用需要而灵活设置。
在某些实施方式中，第一显示区110内包括多个第一显示像素，第二显示区120内包括多个第二显示像素，且相邻的第二显示像素之间的第一间隙比相邻的第一显示像素之间的第二间隙大。因此，当感光器件220对应第二间隙设置时，从该第二间隙穿过的光信号更多，从而提高了光电传感装置20的感测精度。
在本说明书的描述中，参考术语“一个实施方式”、“某些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本实用新型的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
尽管上面已经示出和描述了本实用新型的实施方式，可以理解的是，上述实施方式是示例性的，不能理解为对本实用新型的限制，本领域的普通技术人员在本实用新型的范围内可以对上述实施方式进行变化、修改、替换和变型。

Claims (21)

  1. 一种电子设备，其特征在于：包括一显示屏以及位于所述显示屏下方的光电传感装置，所述显示屏包括多个显示像素，且相邻的显示像素之间具有间隙；所述光电传感装置包括衬底及设置于所述衬底上的多个感光器件，且所述感光器件对应位于所述间隙的下方。
  2. 如权利要求1所述的电子设备，其特征在于：所述间隙内形成透光区域。
  3. 如权利要求2所述的电子设备，其特征在于：所述感光器件位于所述间隙的正下方，以接收穿过所述间隙的光信号。
  4. 如权利要求1所述的电子设备，其特征在于：所述显示屏包括OLED显示屏。
  5. 如权利要求4所述的电子设备，其特征在于：所述显示像素包括红色、绿色、蓝色三种显示像素。
  6. 如权利要求1所述的电子设备，其特征在于：所述感光器件呈阵列分布于所述衬底靠近所述显示屏的一侧。
  7. 如权利要求1所述的电子设备，其特征在于：所述光电传感装置进一步包括抗混叠成像元件，所述抗混叠成像元件设于设有所述感光器件的衬底上，用于防止相邻的感光器件之间接收到的光信号产生混叠。
  8. 如权利要求7所述的电子设备，其特征在于：所述抗混叠成像元件包括吸光墙以及由吸光墙围成的多个透光区域。
  9. 如权利要求8所述的电子设备，其特征在于：所述多个透光区域均匀分布。
  10. 如权利要求8所述的电子设备，其特征在于：所述吸光墙包括多个交替层叠设置的吸光块和垫高块。
  11. 如权利要求10所述的电子设备，其特征在于：所述垫高块为透明材料制成。
  12. 如权利要求8所述的电子设备，其特征在于：所述透光区域内填充透明材料。
  13. 如权利要求7所述的电子设备，其特征在于：所述抗混叠成像元件包括多层交替层叠设置的吸光层和透明支撑层；所述吸光层包括多个间隔设置的吸光块；所述透明支撑层由透明材料填充形成，且一并填充所述吸光块之间的间隔；其中所述间隔对应的区域形成透光区域。
  14. 如权利要求13所述的电子设备，其特征在于：所述每一层透明支撑层的厚度不相等。
  15. 如权利要求14所述的电子设备，其特征在于：所述透明支撑层的厚度逐层增大。
  16. 如权利要求7所述的电子设备，其特征在于：所述光电传感装置进一步包括滤光膜，所述滤光膜设于所述抗混叠成像元件远离所述衬底的一侧，或者所述滤光膜设于抗混叠成像 元件与所述感光器件之间。
  17. 如权利要求16所述的电子设备，其特征在于：所述滤光膜用于将蓝色或绿色光信号以外的光信号滤除。
  18. 如权利要求16所述的电子设备，其特征在于：所述光电传感装置进一步包括封装体，所述封装体用于将所述衬底、以及所述衬底上的感光器件、抗混叠成像元件以及滤光膜进行封装。
  19. 如权利要求1所述的电子设备，其特征在于：所述显示屏对应或正对所述光电传感装置的区域为感测区，且所述感测区位于显示屏的显示区的中下位置处。
  20. 如权利要求1-19任一项所述的电子设备，其特征在于：所述光电传感装置为感光芯片，用于感测生物特征信息。
  21. 如权利要求1-19任一项所述的电子设备，其特征在于：所述光电传感装置为指纹传感装置。
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