WO2019031755A1

WO2019031755A1 - Light emitting device having nitride-based thin film, manufacturing method therefor and template for manufacturing semiconductor device

Info

Publication number: WO2019031755A1
Application number: PCT/KR2018/008670
Authority: WO
Inventors: 최유항
Original assignee: 주식회사 루미스타
Priority date: 2017-08-09
Filing date: 2018-07-31
Publication date: 2019-02-14
Also published as: KR101868423B1

Abstract

Provided are a light emitting device having a nitride-based thin film, a manufacturing method therefor and a template for manufacturing a semiconductor device. The light emitting device having a nitride-based thin film, according to an embodiment of the present invention, comprises: a separation layer, which comprises an aperture part and remains after a separation process using a laser lift-off method; a first conductive base semiconductor layer, which has the outer wall exposed to the aperture part and is formed of a nitride-based semiconductor on the separation layer; a first conductive semiconductor layer comprising a first conductive additional semiconductor layer; an active layer and a second conductive semiconductor layer sequentially arranged on the first conductive semiconductor layer; and electrodes connected to the first and second conductive semiconductor layers, and spaced from each other, wherein the separation layer has higher separation process selectivity than the first conductive base semiconductor layer when the laser lift-off method is carried out.

Description

LIGHT-EMITTING DEVICE HAVING NITRIDE-BASED FILM, TEMPERATURE MANUFACTURING METHOD, AND TEMPLATE

The present invention relates to a light emitting device having a nitride-based thin film and a method of manufacturing the same, and more particularly, to a light emitting device having a nitride-based thin film and a method of manufacturing the same, Type nitride semiconductor layer and minimizes damage to the nitride-based semiconductor layer of the nitride semiconductor layer, as well as a specific pattern for maximizing the light extraction efficiency on the surface of the semiconductor layer without any additional process, a method for producing the same, and a template for semiconductor device fabrication.

In general, nitrides of a Group III element such as gallium nitride (GaN) and aluminum nitride (AlN) have excellent thermal stability and have a direct bandgap energy band structure. Recently, nitride materials for blue and ultraviolet light Has received a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel displays, traffic lights, indoor lighting, high-density light sources, high resolution output systems and optical communication.

It is difficult to fabricate a nitride semiconductor layer of such a group III element, particularly a substrate of the same type on which gallium nitride can be grown. In the case of a heterogeneous substrate having a similar crystal structure, metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy MBE), the nitride semiconductor layer is grown. A sapphire substrate having a hexagonal system structure is mainly used as a heterogeneous substrate. However, since sapphire is an electrically non-conductive material, the structure of the light emitting device is limited, and it is mechanically and chemically very stable, making it difficult to cut and shape the sapphire. Accordingly, in recent years, techniques for growing nitride semiconductor layers on different substrates such as sapphire and then separating the different substrates have been studied.

A laser lift-off method is used to separate a sapphire substrate having poor thermal conductivity from the light emitting structure in the fabrication of the nitride-based light emitting device. Such a laser lift-off method leads to thermal and mechanical deformation of the light-emitting laminated structure including the active layer. When the laser beam as the strong energy source is irradiated to the rear surface of the transparent sapphire substrate, strong laser beam absorption occurs at the interface between the nitride semiconductor layer of the predetermined conductivity type and the sapphire substrate. As a result, a temperature of 900 degrees or more occurs instantaneously, the nitride semiconductor at the interface is thermally decomposed, and the sialic substrate can be separated. However, mechanical and thermal damage is caused by the pressure of nitrogen generated during thermochemical decomposition of the nitride semiconductor layer and the high power of the laser beam.

Damage to the thin film of the laminated light emitting structure causes not only a large leakage current but also a significant decrease in the chip yield of the light emitting device and a deterioration in the overall performance of the light emitting device.

In the production of the nitride-based light-emitting device, the portion that can significantly improve the light output of the device is the n-type semiconductor layer. Since the refractive index of the semiconductor layer made of the flat plane of the n-type semiconductor layer is greatly different from the refractive index of the atmosphere, total reflection occurring at the interface between the atmosphere and the semiconductor layer occurs and a large part of the light generated in the active layer can not be leaked to the outside. As a result, a high light output can not be expected. Therefore, it is necessary to artificially deform the surface of the semiconductor layer to prevent the total reflection from occurring, and to allow the light to leak to the outside with a minimum loss.

Thus, conventionally, a protruding structure is formed on a semiconductor layer by wet etching using a basic solution such as KOH or NaOH on the surface of a semiconductor layer of a predetermined conductivity type.

However, in the case of using wet etching, it is difficult to uniformly form the protruding structure over the entire surface, and the size of the structure is also limited in the process, which limits the light extraction.

SUMMARY OF THE INVENTION The present invention is directed to a light emitting device having a nitride-based thin film that minimizes damage to a nitride-based semiconductor layer caused by heat and gas pressure in a manufacturing process accompanied by a laser lift-off method, A method for manufacturing the same, and a template for manufacturing a semiconductor device.

Another aspect of the present invention is to provide a light emitting device, a method of manufacturing the same, and a template for manufacturing a semiconductor device, which realizes a specific pattern maximizing light extraction efficiency on the surface of a semiconductor layer without any additional process.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a light emitting device having a nitride-based thin film, including: an isolation layer having an opening and remaining through a separation process by a laser lift-off method; A first conductive base semiconductor layer formed on the isolation layer, the first conductive base semiconductor layer being formed of a nitride-based semiconductor, the first conductive base semiconductor layer being exposed on the outer wall through the opening, A second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, The first conductivity type semiconductor layer, and the second conductivity type semiconductor layer, wherein when the laser lift-off method is performed, 1 conductivity type base semiconductor layer.

In another embodiment, the nitride-based thin film having an acute angle with respect to the surface of the first conductive type additional semiconductor layer in which the inclination angle of the outer wall of the first conductive base semiconductor layer adjacent to the opening overlaps with the opening may be provided.

In still another embodiment, the isolation layer may be formed of a nitride semiconductor film that is undoped so that no impurities are implanted, a non-doped material film of the same component as the first conductive base semiconductor layer, a metal oxide film, and a metal nitride film Can be formed.

In another embodiment, openings around the lamination patterns may be connected when viewed from above the separation layer, such that each of the lamination patterns composed of the separation layer and the first conductive base semiconductor layer are spaced apart from each other.

In still another embodiment, the isolation layer and the first conductive base semiconductor layer may be formed to a thickness of 1 탆 or more and 5 탆 or less, respectively.

In another embodiment, the opening disposed near the upper side of the first conductive type base semiconductor layer adjacent to the first conductive type additional semiconductor layer may have a width of 0.5 占 퐉 or more and 5 占 퐉 or less.

In another embodiment, the base substrate may be any one of a printed circuit board, a nonconductive resin substrate, a silicon substrate, and a ceramic substrate.

In another embodiment, the semiconductor light emitting device further includes a plurality of layers stacked on the first conductivity type semiconductor layer and having different refractive indices, wherein the plurality of layers has a refractive index smaller from the first conductivity type semiconductor layer toward the opening Can be arranged in a losing order.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device having a nitride-based thin film, the method including: preparing a substrate for a template having transparency, a separating layer formed on the substrate for template, A first conductive base semiconductor layer formed of a nitride semiconductor and an opening penetrating the first conductive base semiconductor layer and the separation layer to expose the template substrate, Preparing a template for fabricating a semiconductor device having a separation degree higher than that of the first conductivity type base semiconductor layer by a separation step by a laser lift-off method for separating the first conductivity type base semiconductor layer Forming a first conductive type additional semiconductor layer on the first conductive type base semiconductor layer, forming a first conductive type additional semiconductor layer on the first conductive type base semiconductor layer, Forming an active layer and a second conductive type semiconductor layer sequentially on the body layer, forming electrodes which are connected to the first conductive type additional semiconductor layer and the second conductive type semiconductor layer and are spaced apart from each other, And separating the light emitting structure formed on the upper part of the separation layer from the substrate for template by a laser lift-off method for the layer.

In another embodiment, the separation layer includes a first buffer layer provided on the template substrate and a second buffer layer provided on the first buffer layer, wherein the first and second buffer layers are formed to have a ratio Wherein the first buffer layer is formed of an undoped nitride semiconductor film, a non-doped material film of the same component as the first conductive base semiconductor layer, a metal oxide film, and a metal nitride film, Wherein the first buffer layer is formed of a film having a density lower than that of the buffer layer, and in the step of separating the light emitting structure from the substrate for template, the second buffer layer may be cut in the first buffer layer to remain in the first conductive base semiconductor layer have.

In yet another embodiment, the first buffer layer may be formed to a thickness of 10 nm or more and 1 μm or less, and the second buffer layer and the first conductive base semiconductor layer may be formed to a thickness of 1 μm or more and 5 μm or less, respectively.

In another embodiment, the separation layer adjacent to the template substrate may be formed to have a width of 3 m or less.

In yet another embodiment, the method may further include forming conductive balls spaced apart from the electrodes before separating the light emitting structure from the substrate for the template, and forming a space between the conductive balls to expose the conductive balls to the outside And disposing a base substrate on the conductive balls, wherein the base substrate may be any one of a printed circuit board, a nonconductive resin substrate, a silicon substrate, a ceramic substrate, and a glass substrate.

In another embodiment, before the step of separating the light emitting structure from the template substrate, the step of attaching the first transfer substrate through the tape onto the light emitting structure located on the opposite side of the template substrate A step of separating the first transfer substrate from the light emitting structure after the step of separating the light emitting structure from the substrate for template and transferring the second transfer substrate through the tape to the opposite side of the side to which the first transfer substrate is attached, And transferring the first transfer substrate having the light emitting structure attached thereon to a predetermined position to form conductive balls spaced apart from the electrodes and arranging the base substrate on the conductive balls Step < / RTI >

According to another aspect of the present invention, a template for fabricating a semiconductor device includes a template substrate, a separation layer formed on the template substrate, and a base semiconductor layer formed on the separation layer, and an opening penetrating the base semiconductor layer and the isolation layer to expose the template substrate, wherein the isolation layer includes a laser lift off region for separating the template substrate from the base semiconductor layer, Method, the selectivity of the separation process is higher than that of the base semiconductor layer.

The details of other embodiments are included in the detailed description and drawings.

According to the present invention, it is possible to prevent cracks and the like caused in the nitride-based semiconductor layer of a predetermined conductivity type due to heat and gas pressure in a manufacturing process accompanied by a laser lift-off method have.

In addition, by manufacturing the light emitting device using the template for semiconductor device fabrication, a specific pattern of the protruding semiconductor layer for maximizing the light extraction efficiency can be formed without any additional process.

1A and 1B are cross-sectional views of a template for manufacturing a semiconductor device used in a method of manufacturing a light emitting device having a nitride-based thin film according to an embodiment of the present invention.

Figs. 2A to 2C are plan views showing various types of openings of templates for fabricating semiconductor devices according to embodiments of the present invention. Fig.

3 is a cross-sectional view illustrating a process of manufacturing a template for fabricating a semiconductor device according to an embodiment of the present invention.

4A to 4D are cross-sectional views illustrating a method of manufacturing a light emitting device having a nitride-based thin film according to an embodiment of the present invention.

5A to 5C are cross-sectional views illustrating a method of manufacturing a light emitting device having a nitride-based thin film according to another embodiment of the present invention.

6A and 6B are microscope images of the first and second conductivity type semiconductor layers on the manufacturing method according to another embodiment of the present invention.

7A and 7B are SEM images of the first conductivity type semiconductor layer of the light emitting device according to the manufacturing method according to the embodiment of the present invention.

8A to 8C are cross-sectional views showing a part of the structure of a light emitting device manufactured according to an embodiment of the present invention.

9 is a graph showing the power profile of the light emitting devices shown in Figs. 8A to 8C.

10A to 10C are graphs showing results of simulations assuming that a laser is irradiated according to a laser lift-off method in a combination of a template for fabricating a semiconductor device according to the present invention and a gallium nitride film covering a sapphire substrate according to the prior art, admit.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings and the following description. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are being provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Like reference numerals designate like elements throughout the specification.

It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. In addition, the expression of the positional relationship used in the specification, for example, the upper, lower, left, and right sides is described for convenience of explanation, and when the drawings shown in this specification are reversed, the positional relationship described in the specification is reversed .

&Quot; comprises " and / or " comprising ", as used herein, unless the recited element, step, operation, and / Or additions.

In the drawings, the thickness and size of each layer are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not fully reflect the actual size.

Hereinafter, templates for fabricating semiconductor devices according to embodiments of the present invention will be described in detail with reference to FIGS. 1 to 2C. FIGS. 1A and 1B are cross-sectional views of a template for manufacturing a semiconductor device used in a method of manufacturing a light emitting device having a nitride-based thin film according to an embodiment of the present invention. FIGS. 2A to 2C are cross- Are plan views illustrating the shapes of the various openings of the templates.

Semiconductor devices may be light emitting devices, various amplifiers using conventional diodes and semiconductor layers, switching devices, and the like. Hereinafter, the case where the semiconductor element is a light emitting element will be mainly described.

Referring to FIG. 1, a template 100 for fabricating a semiconductor device according to an embodiment of the present invention includes a template substrate 110 having transparency, a separation layer 160 formed on the template substrate 110, The base semiconductor layer 140 and the separation layer 160 are formed to penetrate through the first conductive base semiconductor layer and the template substrate 110 to expose the first conductive base semiconductor layer and the template substrate 110, (Not shown).

Here, the light emitting element includes an LED using a compound semiconductor layer of a plurality of compound semiconductor layers, for example, a group III-V element, and the LED may be a colored LED emitting light such as blue, green, or red, : UltraViolet) LED. The emitted light of the light emitting device can be implemented using various semiconductors, but is not limited thereto.

The substrate 110 for a template is formed of a substrate having transparency so that a separation process can be performed by a laser lift-off method. For example, the substrate 110 may be a substrate such as sapphire (Aluminum oxide), GaN, GaAs, InP, . Various electronic device structures and the like are formed on the template substrate 110 and the template substrate 110 is separated by the separation layer 160 so that various types of light emitting devices can be manufactured.

The separation layer 160 is a part to which the separation process of the laser lift-off method is applied in the manufacturing process of the light emitting device, and separates the light emitting structure formed on the isolation layer 160 from the substrate 110 for template by the above- . The separation layer 160 may have a selectivity higher than that of the first conductive base semiconductor layer 140 when performing the separation process for separating the template substrate 110 and the first conductive base semiconductor layer 140. [ (Selective ratio).

Specifically, the separation layer 160 may include a first buffer layer 120 and a second buffer layer 130 sequentially formed on the template substrate 110.

The first buffer layer 120 and the second buffer layer 130 may be formed of an undoped nitride semiconductor film to prevent impurities from being implanted, a non-doped material layer of the same composition as the first conductive base semiconductor layer 140, The first buffer layer 120 may be formed of a film having a lower density than that of the second buffer layer 130. In this case, The undoped material layer having the same composition as that of the first conductive base semiconductor layer 140 is not doped with an impurity such as an n-type impurity in the first conductive base semiconductor layer 140, Lt; RTI ID = 0.0 > 140 < / RTI > When the first conductive base semiconductor layer 140 is formed of a GaN-based film doped with an n-type impurity, the first and second buffer layers 120 and 130 are formed of a GaN film to which no n-type impurity is implanted. When the first or

second buffer layer

120 or 130 is formed of a metal oxide film or a metal nitride film, the first buffer layer 120 and the second buffer layer 130 may be formed of a metal oxide film or a metal nitride film such as TiN, AlN, TaN, CrN, ZrN, NiO, MgO, CaO, TiO, NiO, Y ₂ O ₃ , and the like.

If the first and second buffer layers 120 and 130 contain no impurities, the separation process by the laser lift-off method for removing the template substrate 110 from the first conductive base semiconductor layer 140 can be easily performed And the first conductive base semiconductor layer 140 containing the same major component as the second buffer layer 130 having a high density can be well grown on the second buffer layer 130 without lattice mismatch .

Specifically, according to the laser lift-off method, the semiconductor film into which the n-type impurity is implanted is difficult or poorly cut due to a high lattice bonding force, even when output at a high power. However, the first and second buffer layers 120 and 130 in which the impurities are implanted have a lower bonding strength between the lattice layers compared to the first conductive base semiconductor layer 140, -Type base semiconductor layer 140, as shown in FIG.

The first buffer layer 120 having a low density may be formed at a lower temperature than the second buffer layer 130 during the manufacturing process and may be formed into an agglomerate form of a plurality of particles. Since the second buffer layer 130 is formed as a dense film without voids and the first buffer layer is formed as an aggregate, the first buffer layer 120 has a higher selectivity than the second buffer layer 130 in the separation process. Accordingly, the separation process is preferably performed in the first buffer layer 120, and the second buffer layer 130 may remain in the first conductive base semiconductor layer 140. Although the first buffer layer 120 is described as a separation site, the first buffer layer 120 and the second buffer layer 130 adjacent to the first buffer layer 120 may be partially removed by a separation process. The second buffer layer 130 may be formed as a smooth surface by performing a planarization process on the top surface of the second buffer layer 130.

The second buffer layer 130 is formed at a temperature higher than that of the first buffer layer 120 so that dislocation, melt-back, crack, pit, surface morphology, ) Defects are caused in the second buffer layer 130 to a lesser degree. Accordingly, the first conductive base semiconductor layer 140 can be well grown in the second buffer layer 130 without crystal defects.

The first buffer layer 120 may be formed on the second buffer layer 130 to minimize damage to the first conductive base semiconductor layer 140 and the second buffer layer 130 during the separation process, Can be formed to have a smaller thickness. Specifically, the first buffer layer 120 may be formed to a thickness of 10 nm or more and 1 μm or less, and the second buffer layer 130 may be formed to a thickness of 1 μm or more and 5 μm or less.

If the first buffer layer 120 is formed to be less than 10 nm, it can not have an effective selectivity in the separation step. If the first buffer layer 120 is formed to be more than 1 μm, 110 are not easily separated from each other and cause damage to the second buffer layer 130 and the like.

The second buffer layer 130 and the first conductive base semiconductor layer 140 are affected by crystal defects of the first buffer layer 120 formed as an aggregate. When the second buffer layer 130 is formed to have a size of more than 5 탆, the template substrate 110 is warped due to mismatching between the template substrate 110 and the second buffer layer 130 and different thermal expansion coefficients, The process yield for forming a mask pattern (refer to 170 in FIG. 3) arranged on the first conductive base semiconductor layer 140 is lowered to fabricate the first conductive semiconductor layer 150.

In addition, the separation layer 160 adjacent to the template substrate 110 may be formed to have a width of 3 μm or less. When the first buffer layer 120 of the separation layer 160 is formed larger than the width described above, the separation area for the template substrate 110 of the first buffer layer 120 is widened, The inventors have found that damage occurs in the second buffer layer 130 and the first conductive base semiconductor layer 140 in the separation process according to the laser lift-off method.

The first conductive base semiconductor layer 140 is formed of a nitride based compound semiconductor made of, for example, Group 3-Group 5 or the like as the nitride based semiconductor compound, and may be doped with the first conductive type impurity. For example, the first conductive base semiconductor layer 140 may be a semiconductor material having a composition formula of InxAlyGazN (0? X? 1, 0? Y? 1, 0? Z? 1), GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN compound semiconductors. When the first conductive base semiconductor layer 140 is an n-type semiconductor layer, the first conductive type impurity may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive base semiconductor layer 140 may be formed as a single layer or a multilayer, but is not limited thereto.

1A and 1B, the inclined angle of the outer wall of the first conductive base semiconductor layer 140 adjacent to the opening 150 has an acute angle with respect to the surface of the template substrate 110 overlapping the opening portion . The outer side walls of the acute angle can be realized by reverse arc etching and the outer side inclination angles d1 and d2 of the first conductive base semiconductor layer 140 that can be formed by the reverse arc etching method are 45 degrees or more and 75 degrees or less . Since the refractive indexes of the first conductive base semiconductor layer 140 and the opening portion 150 made of the GaN compound semiconductor are different from each other, the total reflection of the light emitted from the first conductive base semiconductor layer 140 is 23.5 . Thus, when the outer inclination angle is in the above-mentioned range, light is well emitted to the outside of the first conductive base semiconductor layer 140 without total reflection, and the light extraction efficiency is improved.

The first conductive base semiconductor layer 140 may have a thickness of 1 탆 or more and 5 탆 or less. When the first conductive base semiconductor layer 140 is formed to be less than 1 탆, the first conductive type additional semiconductor layer 210 formed on the first conductive base semiconductor layer 140 is poorly grown. If the first conductive base semiconductor layer 140 is formed to have a thickness of more than 5 mu m, mismatching between the template substrate 110, the second buffer layer 130, and the first conductive base semiconductor layer, and different thermal expansion coefficients, The process yield for forming a mask pattern (170 in FIG. 3) arranged on the first conductive base semiconductor layer 140 to fabricate the opening 150 is lowered do.

1A and 1B illustrate that the inclination angle of the outer wall is an acute angle. However, the present invention is not limited thereto, and if it is possible to achieve easy separation and minimization of damage to the first conductive base semiconductor layer 140, The conductive base semiconductor layer 140 and the isolation layer 160 may have substantially right-angled or obtuse-angled outer walls.

The opening 150 is formed in the interface between the separation layer 160 and the template substrate 110 by absorbing heat and gas pressure accompanying separation of the template substrate 110 and the light emitting structure, Thereby relieving stress caused by separation.

As a result of the etching of the first conductive base semiconductor layer 140 and the separation layer 160 by the inverse tilt etching method, the opening 150 is formed to have a gradually decreasing width toward the lower region toward the template substrate 110 And may be formed by etching. As shown in FIG. 1A, the opening 150 may be formed so that the outer walls connecting the isolation layer 160 and the first conductive base semiconductor layer 140 are formed at substantially the same inclination. As shown in FIG. 1B, The opening 150a may be formed so that the layer 160a and the first conductive base semiconductor layer 140a have different inclined outer walls. 1B, the outer wall of the first buffer layer 120a is formed to have a small acute angle with respect to the surface of the template substrate 110 overlapping with the opening 150a, whereby the first buffer layer 120a is formed of a template And a contact area with the substrate 110 for the first substrate. Accordingly, the embodiment of FIG. 1B can realize excellent separation easiness and minimization of damage as compared with FIG. 1A.

The

openings

150 and 150b may be formed of a circular or polygonal shape, such as a honeycomb, as shown in FIGS. 2A and 2B. However, the

openings

150 and 150b may be formed in any shape as long as the shape achieves the above- . 2C, the openings 150c around the lamination patterns are formed on the template substrate 110 so that the patterns in which the isolation layer 160 and the first conductive base semiconductor layer 140c are vertically stacked are separated from each other, When viewed on the upper side of the display unit 110, as shown in FIG. Accordingly, the heat or gas involved in the separation process according to the laser lift-off method easily flows out to the outside of the light emitting structure, and the second buffer layer 130 and the first conductive base semiconductor layer 140 The damage can be further reduced.

Although the present embodiment illustrates that the openings 150 may be formed to have a regular arrangement, they may be irregularly arranged.

In addition, the opening 150 disposed in the vicinity of the upper side of the first conductive base semiconductor layer 140 may have a width W of not less than 0.5 μm and not more than 5 μm.

When the opening 150 is formed to be less than 0.5 탆, the first conductive base semiconductor layer 140 is etched in a reverse arc etching method (etching the film to have an acute angle with respect to the surface of the template substrate 110) .

If the opening 150 is formed to have a size of more than 5 袖 m, the spacing between the adjacent first conductive base semiconductor layers 140 is widened and the size of the first conductive type additional semiconductor layer 210 Defects occur in the lateral growth. In the process of forming the first conductive type additional semiconductor layer 210, the first conductive type additional semiconductor layer 210 through the vertical growth of the surface of the template substrate 110 is laterally grown, As a result of the faster growth, the first conductivity type additional semiconductor layer 210 due to lateral growth is formed including many defects. Accordingly, the opening 150 does not maintain a desired shape, and light emitted from the active layer 230 at a low incident angle is not totally reflected on the sidewalls of the first conductive base semiconductor layer 140, The additional semiconductor layer 210 has low electrical characteristics such as leakage current due to defects such as dislocation, pits, and cracks.

In this embodiment, the base semiconductor layer 140 includes n-type impurities. However, when the semiconductor element is a switching or amplifying element, depending on the design specifications of the semiconductor element, Or a doped state for isolation. In this case, since the first buffer layer 120 is denser than the second buffer layer 130 and the base semiconductor layer 140, the selectivity in the separation step according to the laser lift-off method is high. Accordingly, the first buffer layer 120 functions mainly as a separation site in the laser lift-off method.

Hereinafter, a method for manufacturing a template for semiconductor device fabrication will be described with reference to FIGS. 1A, 1B, and 3. FIG. 3 is a cross-sectional view illustrating a process of manufacturing a template for fabricating a semiconductor device according to an embodiment of the present invention.

A first buffer film 122 is formed on the transparent substrate 110 for a template. The first buffer layer 122 is a material layer having a selectivity of a separation process that is higher than that of the first conductivity type semiconductor film 142. The first buffer layer 122 may be formed of an undoped nitride semiconductor film, A non-doped material layer having the same composition as the semiconductor layer 142, a metal oxide layer, and a metal nitride layer. The first buffer film 122 may be formed at a temperature of 200 degrees to 1000 degrees. When the first buffer film 122 is formed of a nitride semiconductor film or a material film of the same component, hydride vapor phase epitaxy (HVPE) or metal organic chemical vapor deposition (MOCVD) may be applied. If the buffer film 122 is formed of a metal oxide film or a metal nitride film, sputtering or E-beam deposition may be applied.

When the first buffer layer 122 is formed at the above-described temperature, it may be formed into an agglomerate form of a plurality of grains and have a low density. The first buffer layer 122 may have a thickness of 10 nm or more and 1 μm or less.

Next, a second buffer layer 132 is formed on the first buffer layer 122. The second buffer layer 132 is formed of any one of the films listed in the first buffer layer 122 and is formed through a film formation process having a temperature higher than that of the first buffer layer 122, . Accordingly, the second buffer film 132 can be formed with high density so as to have a higher separation selectivity than the first buffer film 122. The second buffer layer 132 may be formed to have a thickness lower than that of the first buffer layer 122 through a film forming process, and may be formed to a thickness of, for example, 1 μm or more and 5 μm or less.

Subsequently, a first conductive base semiconductor film 142 is formed on the second buffer film 132. The first conductive base semiconductor film 142 is formed of a nitride-based semiconductor compound. The first conductive base semiconductor layer 140 may be formed of a compound semiconductor such as a Group III-V element.

The first conductive base semiconductor layer 142 may be formed by a method such as molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD), chemical vapor deposition , Chemical Vapor Deposition (PECVD), and Plasma Enhanced Chemical Vapor Deposition (PECVD), but the present invention is not limited thereto. In addition, n-type impurities may be doped into the first conductive base semiconductor film 142 simultaneously with or at the same time as the process of the above method.

When the first and second buffer films 132 are formed of a non-doped nitride semiconductor film similar to the first conductive base semiconductor film 142 or an undoped material film of the same component, The first buffer layer 142 can be well grown on the second buffer layer 132 without lattice mismatch. The first conductive base semiconductor film 142 may be formed to a thickness of, for example, 1 占 퐉 or more and 5 占 퐉 or less.

Next, a mask pattern 170 having a predetermined opening pattern is arranged on the first conductive base semiconductor film 142. 1A, the opening pattern has the width described above in order to form the width W of the opening 150 to 0.5 mu m or more and 5 mu m or less.

Subsequently, the first conductive base semiconductor film 142, the second buffer film 132, and the first buffer film 122, which are disposed under the mask pattern 170, are sequentially etched by the inverse warp etching method And a plurality of openings 150 are formed.

With respect to an example of a reverse arc etching method, a plasma etching apparatus having an alternating magnetic pole disposed adjacent to the lower portion of the chuck can be applied. In this case, the etching gas is Cl. A mixed gas of BCl 3, Ar, H 2, Hbr, N 2, O 2, or the like can be used and etched so that the surface of the template substrate 110 is exposed. Further, a lot of etching proceeds in a portion adjacent to the template substrate 110, rather than a portion adjacent to the mask pattern 170. This is possible by advancing at a process pressure of 20 to 200 mT and a low bias of 50 to 400 W.

The first conductive base semiconductor film 142, the second buffer film 132, and the first buffer film 122 may be formed by sequentially performing dry etching and wet etching, And the difference in chemical etching rate between the electrodes.

1A, the inclined angles of the outer walls connecting the first conductive base semiconductor layer 140 and the separation layer 160 are formed to have substantially the same acute angle as in the case of the first embodiment, Alternatively, as shown in FIG. 1B, the inclination angle of the outer wall may be formed to be different from the lower angle. Here, the outer wall of the first conductive base semiconductor layer 140 may be formed at 45 degrees to 75 degrees.

In addition, the first buffer layer 120 of the isolation layer 160 adjacent to the template substrate 110 is formed with a width of 3 μm or less by controlling the process conditions of the reverse oblique etching method.

In this embodiment, the inclination angle of the outer wall is an acute angle. However, the present invention is not limited to this, and if the separation easiness and the minimization of the damage of the first conductive base semiconductor layer 140 in the separation process can be achieved, -Type base semiconductor layer 140 and the isolation layer 160 may have an obtuse angle or a substantially perpendicular outer wall.

The opening 150 may be formed in a polygonal shape such as a circle and a honeycomb as shown in FIGS. 2A and 2B. Alternatively, the isolation layer 160 and the first conductive base semiconductor layer 140 may be formed as shown in FIG. May be formed to have a structure in which each of the vertically stacked patterns is spaced apart from each other and viewed when viewed on top of the template substrate 110. However, the present invention is not limited thereto and can be manufactured in any form.

In this embodiment, the base semiconductor layer 140 includes n-type impurities. However, in the case where the semiconductor element is a switching or amplifying element, the base semiconductor layer 140 may be formed in a non- Or in a doped state for isolation.

Hereinafter, a method of manufacturing a light emitting device having a nitride-based thin film according to an embodiment of the present invention will be described with reference to FIGS. 4A to 4D using a template for semiconductor device fabrication. 4A to 4D are cross-sectional views illustrating a method of manufacturing a light emitting device having a nitride-based thin film according to an embodiment of the present invention.

1A and the like, a first conductive type additional semiconductor layer 210 is formed on the template 100. Then, as shown in FIG.

Like the first conductive base semiconductor layer 140, the first conductive type additional semiconductor layer 210 may include an n-type impurity, and InxAlyGazN (0? X? 1, 0? Y? ? 1), GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN based compound semiconductor. The first conductive type additional semiconductor layer 210 may be formed of the same compound semiconductor as the first conductive type base semiconductor layer 112. The first conductive type additional semiconductor layer 210 may be formed in substantially the same manner as the first conductive base semiconductor film 142. When the n-type impurity is simultaneously or simultaneously with the first conductive type semiconductor layer 142, May be doped to the additional semiconductor layer 210.

1A, since the width W of the upper region of the opening 150 is 5 μm or less, the vertical growth lateral growth of the first conductive type additional semiconductor layer 210 on the surface of the template substrate 110 It does not affect. Accordingly, the first conductive type additional semiconductor layer 210 may be formed laterally in a desired shape.

Next, referring to FIG. 4B, a first interlayer 220, an active layer 230, a second intermediate layer 240, a second conductive semiconductor layer 250 (not shown) are formed on the first conductive type additional semiconductor layer 210, And a reflective layer 260 are sequentially stacked.

The first intermediate layer 120 may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer 130, for example, as a conductive clad layer. The first intermediate layer 120 may include GaN, AlGaN, InAlGaN or a superlattice structure, and may be doped with n-type. In addition, the first intermediate layer 220 may be formed of a current diffusion layer and an electron injection layer.

Electrons injected through the first conductive type semiconductor layer (see 205 in FIG. 4D) and holes injected through the second conductive type semiconductor layer 250 meet with each other to form an energy band unique to the active layer (light emitting layer) Which emits light having an energy determined by < RTI ID = 0.0 > The active layer 230 may include any one of a double heterostructure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure. InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), and / AlGaAs (InGaN / GaN) , GaP (InGaP) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

The active layer 230 may be formed by a method such as MOCVD, CVD, PECVD, molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE). And is not limited thereto. For example, a trimetalgallium gas (TMGa), an ammonia gas (NH3), a nitrogen gas (N2), and a trimethyl indium gas (TMIn) may be implanted to form a multiple quantum well structure.

The second intermediate layer 240 may be, for example, a conductive type cladding layer substantially the same as the first intermediate layer 120.

Specifically, the second intermediate layer 240 may serve as electron blocking and cladding of the active layer (MQW cladding) to improve the light emitting efficiency. For example, the second intermediate layer 240 may be formed of an AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1) semiconductor and may have energy higher than the energy band gap of the active layer 230 Band gap, and may be formed to a thickness of about 100 A to about 600 A, but the present invention is not limited thereto. Also, the second intermediate layer 240 may be formed of AlzGa (1-z) N / GaN (0? Z? 1) superlattice, but is not limited thereto. The second intermediate layer 240 can effectively block the electrons that are ion-implanted into the P-type to overflow and increase the hole injection efficiency.

The second conductive semiconductor layer 250 disposed on the second intermediate layer 240 may be formed of a semiconductor compound. The second conductive semiconductor layer 250 may be formed of a compound semiconductor such as Group 3-Group 5, Group 2 or Group 6, and may be doped with a second conductive impurity. For example, a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1) or a semiconductor material of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, May be formed of one or more. When the second conductivity type semiconductor layer 250 is a P type semiconductor layer, the second conductivity type impurity may be a P type dopant such as Mg, Zn, Ca, Sr, and Ba. The second conductive semiconductor layer 250 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The second conductive semiconductor layer 250 may be formed by a method such as molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), and plasma chemical vapor deposition Method, but the present invention is not limited thereto. In addition, P-type impurities may be doped into the second conductivity type semiconductor layer 250 simultaneously with or at the same time as the process of the above method. As a specific example, a non-cetyl cyclopentadienyl magnesium (EtCp2Mg) {Mg (Mg) containing a P-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH3), nitrogen gas (N2), and magnesium (C 2 H 5 C 5 H 4) 2} is injected, a second conductive semiconductor layer 250 such as a P-type GaN layer can be formed.

The reflective layer 260 disposed on the second conductive semiconductor layer 250 reflects light generated in the active layer 230 and may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Au, Hf, and a combination thereof.

A first electrode 280 is formed on the reflective layer 260 to fill the contact hole connected to the first conductive type additional semiconductor layer 210 and electrically connected to the second conductive type semiconductor layer 250. [ Thereby forming a second electrode 290 to be connected. Of course, the first and

second electrodes

280 and 290 are spaced apart. The first and

second electrodes

280 and 290 may be formed of a conductive material such as a metal. More specifically, the first and

second electrodes

280 and 290 may be formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Hf, and an optional combination thereof, and may be formed as a single layer or a multilayer structure. The contact hole includes a sidewall insulation layer 270 on the sidewall for isolation from the surroundings.

Next, conductive balls 300 are formed on the first and

second electrodes

280 and 290 by soldering or the like.

Next, a base substrate 310 is formed on the conductive balls 300 and the space for exposing the conductive balls 300 to the outside. The base substrate 310 may be formed of a printed circuit board, a non-conductive resin substrate, a silicon substrate, a ceramic substrate, or a glass substrate. When the base substrate 310 is formed of a printed circuit board, Not only does it serve to support the light emitting structure connected to the base substrate 310 in the separation process according to the present invention but also remains as a final structure of the light emitting device without being removed even after the separation process.

In addition, the space portion is a portion formed as an empty space without interposing any member between the conductive balls 310 separated during the separation process.

Referring to FIG. 4C, the separation step L according to the laser lift-off method removes the template layer 110 from the second buffer layer 130 with the first buffer layer 120 of the separation layer 160 as a boundary, .

The separation step (L) thermally decomposes the first buffer layer (120) by irradiating the separation layer (160) with a laser beam of a specific wavelength through the transparent template substrate (110). Specifically, the laser lift-off method can use a KrF laser (248 nm) and an ArF laser (194 nm). Heat and gas accompanying the laser lift-off method are supplied through the opening 150 of the template 100 for manufacturing a semiconductor device The first conductive base semiconductor layer 140 can be protected from damage such as cracks and bow. In addition, since the first buffer layer 120 has a lower density than the second buffer layer 130 and the template substrate 110 can be separated by a laser with a lower output power, the first conductive base semiconductor layer 140, Can be further prevented.

In addition, in the semiconductor device fabrication template 100, the first conductive base semiconductor layer 140 is formed in a concavo-convex shape having an acute angle of inclination, so that the protruding first conductive base semiconductor layer 140 may be formed without additional processes such as etching. Further, according to the conventional etching, the protruding pattern is not uniform, but according to the present embodiment, the protruding pattern can be formed very uniformly over the entire surface.

In addition, since the template substrate 110 partially contacts the first buffer layer 120 by the opening 150, when the base substrate 310 supports the light emitting structure during the separation process, There is no need to intervene. Particularly, the separating force acting between the template substrate 110 and the separation layer 160 can be reduced due to the partial contact. Therefore, even when the base substrate 310 and the support such as resin adhered to the light emitting structure are not provided in the space, The separation process can proceed smoothly even with the adhesion force between the base substrate 310 and the conductive balls 300. That is, the separation process can be simplified without adding a separate support.

In addition, since the printed circuit board finally connected to the light emitting structure and the base substrate 310 can remain after the separation process, the process is more efficient than using the temporary support substrate for the separation process.

Subsequently, the second buffer layer 130 remaining on the first conductive base semiconductor layer 140 is subjected to a polishing or etching process to planarize the upper surface of the second buffer layer 130, and HCl and ultrapure water The foreign matter generated in the separation step is removed by a chemical treatment using a mixed solution of the organic solvent and the organic solvent.

After the separation process and the removal of foreign matter are completed, the remaining second buffer layer 130, the first conductive base semiconductor layer 140, and the first conductive type additional semiconductor layer 210 are separated from the first conductive semiconductor layer 205, .

Next, referring to FIG. 4D, in order to maximize the light escape effect to the outside, the first and second adjustment layers 322 and 324 having different refractive indexes are arranged on the first conductivity type semiconductor layer 205 Layer 320 is formed. The first and second control layers 322 and 324 are arranged in order of decreasing refractive index from the first conductive base semiconductor layer 140 to the opening 150 and are formed by CVD, thermal evaporation, sputtering, . The first and second control layers 312 and 314 may have a refractive index lower than that of the GaN first conductivity type semiconductor layer 205 and may be formed of SiN, SiO 2, TiO 2, TiN, ZnO, Al 2 O 3, or the like.

Hereinafter, a light emitting device having a nitride-based thin film according to an embodiment of the present invention will be described with reference to FIG. 4D. The technical meaning of each of the above-described components is omitted, and each configuration is schematically referred to.

The light emitting device manufactured by the manufacturing method of FIGS. 4A to 4D includes an opening 150 and a second buffer layer 130 which is a separation layer remaining through a separation process by a laser lift-off method. The light emitting device includes a first conductive type base semiconductor layer 140 formed by a nitride-based semiconductor at the lower portion of the second buffer layer 130 and an outer side wall exposed through the opening 150 by sharing the opening 150, And an additional semiconductor layer 220 includes a first conductive type semiconductor layer 205 which is sequentially stacked.

Here, the second buffer layer 130 has a selectivity higher than that of the first conductive base semiconductor layer 140 when the laser lift-off method is performed. For example, the second buffer layer 130 may be formed of any one of a non-doped nitride semiconductor film, a non-doped material layer having the same composition as the first conductive base semiconductor layer 140, a metal oxide film, and a metal nitride film .

The first buffer layer (see 120 in FIG. 4B) functions mainly as a separation site, but the second buffer layer 130 is also partially removed due to heat accompanying the laser lift-off method.

The second buffer layer 130 can suppress the electrostatic discharge in the first conductive type semiconductor layer 205, although it remains in the manufacturing process. Since the first conductive semiconductor layer 205 is doped with a high concentration of N-type impurities, electrostatic discharge may be induced, but the second buffer layer 130 may minimize electrostatic discharge.

In addition, impurities of the first conductivity type semiconductor layer 205 are diffused by the heat accompanying the laser lift-off method, so that the doping concentration and conductivity in the first conductivity type semiconductor layer 205 are lowered, and the applied voltage is raised . However, the impurity diffusion is prevented by the second buffer layer 130, so that the doping concentration and the conductivity can be prevented from lowering.

In addition, since the second buffer layer 130 extends to the outer wall of the first conductive base semiconductor layer 140, the light extraction efficiency of the first conductive semiconductor layer 205 can be further improved.

The inclined angle of the outer side wall of the first conductive base semiconductor layer 140 adjacent to the opening 150 may have an acute angle with respect to the surface of the first conductive type additional semiconductor layer 220 which overlaps the opening 150.

The opening 150 may be formed in various shapes as well as the shapes shown in Figs. 2A and 2B. 2C, the openings 150c around the stacked patterns are formed in the second buffer layer 130 so that the stacked patterns composed of the second buffer layer 130 and the first conductive base semiconductor layer 140 are separated from each other. When viewed from above, can be connected.

The second buffer layer 130 and the first conductive base semiconductor layer 140 may be formed to have a thickness of 1 袖 m or more and 5 袖 m or less, respectively, and the first conductive type base semiconductor layer 140, The opening disposed near the bottom side of the layer 140 may have a width of 0.5 占 퐉 or more and 5 占 퐉 or less.

The light emitting device includes a first interlayer 220, an active layer 230, a second intermediate layer 240, a second conductive semiconductor layer 250, and a reflective layer 250, which are sequentially stacked under the first conductive semiconductor layer 205. (260).

The light emitting device includes first and

second electrodes

280 and 290 connected to the first and second conductivity type semiconductor layers 205 and 250 and first and

second electrodes

280 and 290 connected to the first and

second electrodes

280 and 290, Conductive balls 300 disposed to be spaced apart from each other and a base substrate 310 attached to the conductive balls 300. The base substrate 310 may be any one of a printed circuit board, a nonconductive resin substrate, a silicon substrate, a ceramic substrate, and a glass substrate.

The light emitting device may include first and second control layers 312 and 314 that are stacked on the first conductive type semiconductor layer 205 and have different refractive indices from each other and the first and second control layers 312 And 314 may be arranged in the order of decreasing refractive index from the first conductivity type semiconductor layer 205 to the opening 150.

4A and 4B, a first interlayer 220, an active layer 230, and a third interlayer are formed on the first conductive type additional semiconductor layer 210 by using the template 100 for fabricating a semiconductor device, The second intermediate layer 240, the second conductive semiconductor layer 250 and the reflective layer 260 are sequentially stacked to form the first conductive type additional semiconductor layer 210 and the second conductive type semiconductor layer 250 electrically The first and

second electrodes

280 and 290 are formed.

The first transfer substrate 340 is then attached to the first and

second electrodes

280 and 290 located on the opposite side of the template substrate 110 through the tape 330. The first transfer substrate 340 may be formed of any one of silicon, glass, metal, and film. Although the first transfer substrate 340 is attached to one light emitting structure in the present embodiment, in the actual manufacturing process, the first transfer substrate 340 is attached to the plurality of light emitting structures, .

Referring to FIG. 5B, the light emitting structure is separated from the template substrate 110 by a laser lift-off method. Since the separation process has been described in detail with reference to FIG. 4C, a description thereof will be omitted.

By performing the laser lift-off method using the template 100 for semiconductor device fabrication that is partially in contact with the first buffer layer 120 by the opening 150 as in the present embodiment, The separating force is significantly reduced compared to the template without the opening. Accordingly, even if the light emitting structure is adhered to the first transfer substrate 340 with a weak adhesive force, the light emitting structure is stably fixed to the first transfer substrate 340 at the time of separation, and a plurality of light emitting structures Position.

Referring to FIG. 5C, the first and second control layers 322 and 324 (see FIG. 5C) having different refractive indexes are formed on the first conductive base semiconductor layer 140 in a state where the light emitting structure is attached to the first transfer substrate 340. (Not shown).

The first transfer substrate 340 is detached from the light emitting structure and a tape 350 is attached to the first and

second electrodes

280 and 290 opposite to the side to which the first transfer substrate 340 is attached The second transfer substrate 360 is attached. The second transfer substrate 360 may be formed of the same material as the first transfer substrate 340, and may transfer a plurality of the light emitting structures simultaneously for a subsequent process.

Next, in the state where the light emitting structure is attached to or removed from the second transfer substrate 360, as in FIG. 4B, the conductive balls are formed apart from the first and

second electrodes

280 and 290 , And the base substrate is placed on the conductive balls. The base substrate may be formed of the substrate described in Fig. 4B.

6A, when the template substrate 110 is separated by the laser lift-off method in a state where the light emitting structure is attached to the first transfer substrate 340, the first conductive semiconductor layer 205). &Lt; / RTI > 6B shows a state in which the light emitting structure is separated from the first transfer substrate 340 and attached to the second transfer substrate 360 and the surface of the second conductive semiconductor layer 250 It is a microscopic image.

6A, heat and gas accompanying the laser lift-off process are released through the opening 150 of the template 100 for fabricating a semiconductor device, so that cracks and bowling are formed on the surface of the first conductive base semiconductor layer 205 side, And it was confirmed that there was no damage such as damage.

6B, the first transport substrate 340 stably adheres to the surface of the second conductive type semiconductor layer 360 while the laser lift-off method is in progress, And the tape 330 are not left at all.

The light emitting device shown in FIGS. 7A and 7B was manufactured by separating the template substrate 110 from the second buffer layer 130 by a laser lift-off method.

As can be seen from the SEM images, the second buffer layer 130 or the first conductive base semiconductor layer 140 is formed by the heat and the gas which are released during the separation process through the opening 150 of the template 100 for fabricating a semiconductor device, Crystal defects such as cracks and pits do not occur on the surface of the substrate.

FIGS. 8A to 8C are cross-sectional views showing a part of the structure of the light emitting devices manufactured according to the conventional and the embodiments of the present invention, and FIG. 9 is a graph showing the power profile of the light emitting devices shown in FIGS. 8A to 8C.

8A is a conventional light emitting device 700a, which is a light emitting device 700a in which an encapsulation layer 720a for a package is stacked on a flat first conductivity type semiconductor layer 710a.

8B is a light emitting device 700b manufactured using a template for fabricating a semiconductor device according to an embodiment of the present invention. The light emitting device 700b includes a first conductive type additional semiconductor layer 702, a first conductive type base semiconductor layer 704 having a protruding shape, And a second buffer layer 706 which is left in a dummy shape. The light emitting device 700b is formed by laminating an encapsulation layer 720b on a first conductive type semiconductor layer 710b.

8C shows a conventional light emitting device 700c in which a first conductivity type semiconductor layer 710c conformally formed on a protruding insulating substrate 730c and an encapsulation layer 720c Element 700c.

In Fig. 9, the x-axis is the distance in the light emitting element from " 0 " corresponding to " 0 " shown in Figs. 6A to 6C and the y-axis is the light emitting power.

Referring to FIG. 9, it can be seen that the power profile 820 of the light emitting device 700b according to FIG. 6b has a higher light output power than the power profile 810 of the light emitting device 700a according to FIG. 8a. 8C has a structure in which the first conductivity type semiconductor layer 710c has a structure in which the light extraction efficiency is increased by the protruding pattern of the insulating substrate 730c. However, in the light emitting device 700c of FIG. It can be seen that the power profile 820 of the light emitting element 700b has a higher light output power than the power profile 830 of the light emitting element 700c of FIG. 8C.

10A to 10C are simulation results derived from a predetermined analytical modeling equation when a laser lift-off method is applied to a GaN film laminated on a template substrate formed of sapphire or the like.

Specifically, FIGS. 10A and 10B are the results calculated by the modeling equation when the laser lift-off method in which the laser fluence is 0.3 J / cm 2 and the pulse width is 25 ns is applied.

In Fig. 10A, the x-axis is time and the y-axis is the temperature in the GaN film of the portion irradiated with the laser. "910" is a simulation result at a portion irradiated with a laser when a laser lift-off method is performed on a template for fabricating a semiconductor device formed of a GaN film having an opening according to this embodiment. &Quot; 920 " refers to a portion irradiated with a laser in a GaN film covering the entire surface of a sapphire substrate according to the prior art.

As a result, it can be seen that the temperature profile for the GaN film in this embodiment is lower over the entire time than in the prior art. This is because the thermal characteristics of the openings in the present embodiment are different from those in the prior art, and the heat generated in the separation process can be concentrated in the openings.

In Fig. 10B, the x-axis is the distance on the GaN film from the irradiated portion of the laser set to " 0 ", and the y-axis is the temperature along the distance. &Quot; 930 " is the simulation result when the laser lift-off method is performed in this embodiment. &Quot; 940 " is a result of simulation according to the prior art.

It can be confirmed that the temperature profile of the GaN film in this embodiment is lower than that of the prior art over both sides based on the irradiated portion. This is also attributed to the above-mentioned reason.

10C is a simulation result for calculating a threshold value of laser fluence according to the laser pulse width in the laser lift-off method. The x-axis is the pulse width of the irradiated laser, and the y-axis is the threshold of laser fluence with respect to the pulse width.

&Quot; 950 " is a simulation result when the laser lift-off method is performed in this embodiment. And " 960 " is the result of simulation according to the prior art.

Although the threshold value of laser fluence increases as the laser pulse width increases, it can be seen that the threshold value of laser fluence in the GaN film according to this embodiment is lower than that of the prior art over the entire pulse width. This is also attributed to the above-mentioned reason.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, I will understand. Therefore, the scope of the present invention should not be limited to the above-described embodiments, but should be determined by all changes or modifications derived from the scope of the appended claims and the appended claims.

Claims

A separation layer having an opening and remaining through a separation process by a laser lift-off method;

A first conductive base semiconductor layer formed on the isolation layer, the first conductive base semiconductor layer being formed of a nitride-based semiconductor, the first conductive base semiconductor layer being exposed on the outer wall through the opening, A first conductive type semiconductor layer including a first conductive type additional semiconductor layer formed on the first conductive type semiconductor layer;

An active layer disposed on the first conductive semiconductor layer;

A second conductive semiconductor layer disposed on the active layer; And

And electrodes connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,

Wherein the separation layer has a selectivity higher than that of the first conductive base semiconductor layer when the laser lift-off method is performed,

The isolation layer may include a nitride based semiconductor film that is not doped with impurities, a non-doped material film that is the same as the first conductive type base semiconductor layer, a nitride based film that is formed of any one of a metal oxide film and a metal nitride film A light emitting device having a thin film.
The method according to claim 1,

And a nitride-based thin film having an acute angle with respect to a surface of the first conductive type additional semiconductor layer in which an inclination angle of an outer wall of the first conductive base semiconductor layer adjacent to the opening overlaps the opening.
The method according to claim 1,

Wherein the opening around the lamination patterns has a nitride-based thin film that is connected when viewed from the top of the isolation layer, such that each of the lamination patterns composed of the isolation layer and the first conductive base semiconductor layer is separated from each other.
The method according to claim 1,

Wherein the isolation layer and the first conductive base semiconductor layer each have a thickness of 1 占 퐉 or more and 5 占 퐉 or less.
The method according to claim 1,

Wherein the opening disposed near the upper side of the first conductive type base semiconductor layer adjacent to the first conductive type additional semiconductor layer has a nitride based thin film having a width of 0.5 占 퐉 or more and 5 占 퐉 or less.
The method according to claim 1,

Conductive balls spaced apart from the electrodes; And

And a base substrate attached to the conductive balls,

Wherein the base substrate has a nitride-based thin film that is any one of a printed circuit board, a non-conductive resin substrate, a silicon substrate, a ceramic substrate, and a glass substrate.
The method according to claim 1,

Further comprising a plurality of layers stacked on the first conductivity type semiconductor layer and having different refractive indices,

Wherein the plurality of layers are arranged in the order of decreasing refractive index from the first conductivity type semiconductor layer to the opening.
A semiconductor device comprising: a template substrate having transparency; a separation layer formed on the template substrate; a first conductivity type base semiconductor layer formed on the separation layer by a nitride semiconductor; The first conductive base semiconductor layer and the first conductive base semiconductor layer are separated from each other by a laser lift-off method that separates the template substrate and the first conductive base semiconductor layer, Preparing a template for semiconductor device fabrication having selectivity of a separation process higher than that of the first conductive base semiconductor layer;

Forming a first conductive type additional semiconductor layer on the first conductive base semiconductor layer;

Sequentially forming an active layer and a second conductive type semiconductor layer on the first conductive type additional semiconductor layer; And

And forming electrodes connected to the first conductive type additional semiconductor layer and the second conductive type semiconductor layer,

Separating the light emitting structure formed on the isolation layer from the template substrate by a laser lift-off method for the isolation layer,

Wherein the separation layer comprises a first buffer layer provided on the template substrate and a second buffer layer provided on the first buffer layer,

The first and second buffer layers may be formed of an undoped nitride based semiconductor film to prevent impurities from being implanted, a non-doped material layer of the same component as the first conductive type base semiconductor layer, a metal oxide film, Are formed of different films,

Wherein the first buffer layer is formed of a film having a lower density than the second buffer layer,

And separating the light emitting structure from the substrate for template, wherein the second buffer layer is cut in the first buffer layer to leave a nitride-based thin film remaining in the first conductive base semiconductor layer.
9. The method of claim 8,

Wherein the first buffer layer is formed to a thickness of 10 nm or more and 1 μm or less and the second buffer layer and the first conductive base semiconductor layer are each formed to a thickness of 1 μm or more and 5 μm or less, Way.
9. The method of claim 8,

The opening portions around the lamination patterns are connected to each other when viewed from the top of the isolation layer such that each of the lamination patterns composed of the isolation layer and the first conductive base semiconductor layer is separated from each other, Gt;
9. The method of claim 8,

Wherein the separation layer adjacent to the substrate for template has a nitride-based thin film formed to have a width of 3 mu m or less.
9. The method of claim 8,

Wherein the opening portion disposed in the vicinity of the upper side of the first conductive type base semiconductor layer adjacent to the first conductive type additional semiconductor layer has a nitride-based thin film formed to have a width of 0.5 탆 or more and 5 탆 or less .
9. The method of claim 8,

Before separating the light emitting structure from the template substrate,

Forming conductive balls spaced apart from the electrodes; And

Further comprising disposing a base substrate on the conductive balls, and a space for exposing the conductive balls to the outside between the conductive balls,

Wherein the base substrate has a nitride-based thin film that is any one of a printed circuit board, a non-conductive resin substrate, a silicon substrate, a ceramic substrate, and a glass substrate.
9. The method of claim 8,

Before separating the light emitting structure from the template substrate,

Further comprising the step of attaching a first transfer substrate via a tape onto the light emitting structure located on the side opposite to the template substrate,

After separating the light emitting structure from the template substrate,

Removing the first transfer substrate from the light emitting structure and attaching a second transfer substrate through a tape to the opposite side of the side to which the first transfer substrate is attached; And

Further comprising the step of transferring the second transfer substrate having the light emitting structure attached thereto to a predetermined position to form conductive balls spaced apart from the electrodes and disposing a base substrate on the conductive balls, Based thin film.
9. The method of claim 8,

Further comprising forming a plurality of layers having different refractive indices on the first conductive base semiconductor layer and the first conductive type additional semiconductor layer,

Wherein the plurality of layers are arranged in the order of decreasing refractive index from the first conductive base semiconductor layer and the first conductive type additional semiconductor layer toward the opening.
A template substrate;

A separation layer formed on the template substrate;

A base semiconductor layer formed of a nitride-based semiconductor on the isolation layer; And

And an opening penetrating the base semiconductor layer and the separation layer to expose the template substrate,

Wherein the separation layer has a selectivity higher than that of the base semiconductor layer when performing a laser lift-off method for separating the substrate for template and the base semiconductor layer,

Wherein the isolation layer is formed of any one of an undoped nitride based semiconductor film, a non-doped material film having the same composition as the base semiconductor layer, a metal oxide film, and a metal nitride film so as to prevent impurities from being implanted.