WO2019024768A1 - Light emitting device, backlight module employing same, light source module, and manufacturing method thereof - Google Patents

Abstract

Provided in the present invention is a light emitting device. The light emitting device comprises a light emitting chip, a light emitting layer, and a light guide layer. The light emitting chip comprises an upper surface and a side surface. The light emitting layer is formed on the upper surface of the light emitting chip. The light guide layer is formed on the side surface of the light emitting chip. The light guide layer comprises multiple luminescent particles and multiple microbeads. The light emitting layer and the light guide layer do not contain an adhesive. Further provided in the present invention are a backlight module employing the light emitting device, light source module, and manufacturing method of the light emitting device. The light emitting device of the present invention can reduce light leakage from the side surface of the light emitting chip, thus improving the luminous efficiency of the light emitting device. In addition, the present invention has a simple manufacturing process and low costs.

Description

Light-emitting device, backlight module using same, light source module and preparation method thereof Technical field

The invention relates to a light-emitting device, a backlight module using the same, a light source module and a preparation method thereof.

Background technique

Light Emitting Diode (LED) is widely used in various types of illuminating products and display products because of its high brightness, small size, light weight, low damage, low power consumption and long life. The principle of illumination is mainly by applying a voltage to the diode to drive the electrons in the diode to combine with the hole, and the combined energy is released in the form of light. In addition, the conventional light-emitting device mainly adjusts the wavelength (color) and intensity of the light-emitting diode by modifying the surface of the light-emitting diode die.

In the use of light-emitting diodes, the conventional method mainly involves mixing the luminescent powder into the resin and coating it on the LED dies. However, this modification method not only consumes time and consumables, but also causes uneven mixing of the luminescent powder due to the presence of the resin, thereby reducing the luminous efficiency and uniformity of the illuminating device, and reducing the illuminating brightness thereof.

At present, in order to improve the problem of uneven mixing of the luminescent powder, the luminescent particles are mixed with a solvent containing no glue, and the mixed phase is applied to the luminescent wafer to prepare a luminescent device. However, this modification method is not easy to completely and uniformly cover the side surface of the LED chip, and it is easy to cause side leakage, thereby reducing the luminance and luminous efficiency of the light-emitting device.

Summary of the invention

In view of the above, it is necessary to provide a light-emitting device that reduces side light leakage and improves luminous efficiency and light-emitting brightness, and a method of fabricating the same.

The present invention still further provides a backlight module and a light source module to which the light emitting device is applied.

A light emitting device comprising:

An illuminating wafer having an upper surface and a side surface;

a light emitting layer formed on an upper surface of the light emitting wafer;

A light guiding layer is formed on a side of the light emitting wafer, and the light guiding layer comprises a plurality of luminescent particles and a plurality of beads. The luminescent layer and the light guiding layer are free of a binder.

In one embodiment, the microbeads have a particle size of from 5 μm to 600 μm.

In an embodiment, the microbeads comprise one of reflective microbeads, refractive microbeads or a combination therebetween.

In an embodiment, the reflective microbeads comprise one of a metal material, a metal compound material, or a combination therebetween.

In an embodiment, the metal material comprises aluminum, silver or nickel, and the metal compound material comprises barium sulfate.

In an embodiment, the light guiding layer comprises at least one layer of reflective beads, at least one layer of refractive glass beads or a combination therebetween. The at least one reflective microbead and the at least one refractive microbead are sequentially arranged from a direction of a light path emitted by the luminescent wafer.

The invention also provides a backlight module, comprising:

a backboard

a light emitting device as described above, mounted in the backing plate;

A diffusion plate is mounted on the back plate and above the light emitting device.

The invention also provides a method for preparing a light-emitting device, comprising the steps of:

Providing a plurality of light emitting wafers, each of the light emitting wafers having an upper surface and a lower surface;

Adhering the lower surface of the luminescent wafer to an expanded film;

Dispersing the beads uniformly in the gap formed by the upper surface of the luminescent wafer and the adjacent illuminating wafer;

Removing microbeads that are not adhered to the expansion membrane;

Applying a liquid phase containing luminescent particles to the upper surface of the luminescent wafer and a gap formed by the adjacent luminescent wafer, the liquid being glue-free water or a volatile solvent;

Removing the liquid to condense the luminescent particles and the beads into a block and forming a light-emitting layer and a light guiding layer;

Cutting at a corresponding position to load the beads on the side of the luminescent wafer.

In an embodiment, the microbeads comprise one of reflective microbeads, refractive microbeads or a combination therebetween.

In one embodiment, before the step of applying a liquid phase containing luminescent particles to the upper surface of the luminescent wafer and the gap formed by the adjacent illuminating wafer, the method further includes: The refractive type microbeads are added to the liquid phase.

In one embodiment, when the particle diameter of the microbeads is greater than or equal to the thickness of the light emitting wafer, at least one layer of the microbeads is loaded on a side of the light emitting wafer. When the particle diameter of the microbead is smaller than the thickness of the light emitting wafer, the side surface of the light emitting wafer is loaded with a plurality of layers of the microbeads.

The present invention still further provides a method of fabricating another illuminating device, comprising the steps of:

Providing a plurality of light emitting wafers, each of the light emitting wafers having an upper surface and a lower surface;

Forming a lower surface of the luminescent wafer on a substrate;

Applying a liquid phase containing microbeads and luminescent particles to the upper surface of the luminescent wafer and a gap formed by the adjacent illuminating wafer, the liquid being glue-free water or a volatile solvent, the micro The beads are refractive beads;

Removing the liquid to condense the luminescent particles and the beads into a block and forming a light-emitting layer and a light guiding layer;

Cutting at a corresponding position to load the beads on the side of the luminescent wafer.

In one embodiment, when the particle diameter of the microbeads is greater than or equal to the thickness of the light emitting wafer, at least one layer of the microbeads is loaded on a side of the light emitting wafer. When the particle diameter of the microbead is smaller than the thickness of the light emitting wafer, the side surface of the light emitting wafer is loaded with a plurality of layers of the microbeads.

The invention also provides a light source module comprising:

a substrate;

At least one first electrode mounted on the substrate;

At least one light-emitting device as described above, each of the lower surfaces of the light-emitting device is provided with two opposite second electrodes, and the second electrode is electrically connected to the first electrode.

In an embodiment, the light source module further includes a lens formed above the light emitting device.

In an embodiment, the light source module further includes a reflector, and the at least one illumination device is disposed in the reflective cup. Compared with the prior art, the light-emitting device of the present invention prepares a light guiding layer by mixing the luminescent particles and the beads, and then coating the light guiding layer on the side surface of the light-emitting chip, so that the light-emitting chip is The light emitted from the side is guided to the light-emitting layer via the beads, thereby reducing the problem of light leakage on the side of the light-emitting device. Further, since the light guiding layer and the light emitting layer do not have an adhesive, and the microbeads have a function of refraction or reflection, it is possible to further provide luminous efficiency and light emission luminance of the light emitting device. The preparation method of the light-emitting device of the invention is characterized in that the process is simple and the cost is low by mixing the liquid mixed phase containing no binder with the phosphor particles, and then coating the mixed liquid with the light-emitting chip. The backlight module using the above-mentioned light-emitting device has high luminous efficiency and light-emitting brightness.

DRAWINGS

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a light-emitting device according to a first embodiment of the present invention.

Figure 2 is a cross-sectional view showing a light-emitting device of a second embodiment of the present invention.

Figure 3 is a cross-sectional view showing a light-emitting device of a third embodiment of the present invention.

Figure 4 is a cross-sectional view showing a light-emitting device of a fourth embodiment of the present invention.

Figure 5 is a cross-sectional view showing a light-emitting device of a fifth embodiment of the present invention.

Figure 6 is a cross-sectional view showing a light-emitting device of a sixth embodiment of the present invention.

FIG. 7 is a schematic structural view of a light source module according to a first embodiment of the present invention.

8 is a schematic structural view of a light source module according to a second embodiment of the present invention.

9 is a schematic structural view of a light source module according to a third embodiment of the present invention.

FIG. 10 is a schematic structural view of a light source module according to a fourth embodiment of the present invention.

Figure 11 is a schematic view showing the preparation of the first embodiment of the light-emitting device of the present invention.

Figure 12 is a flow chart showing the preparation of the first embodiment of the light-emitting device of the present invention.

Figure 13 is a schematic view showing the preparation of a second embodiment of the light-emitting device of the present invention.

Figure 14 is a flow chart showing the preparation of the second embodiment of the light-emitting device of the present invention.

Figure 15 is a schematic view showing the preparation of a third embodiment of the light-emitting device of the present invention.

Figure 16 is a flow chart showing the preparation of a third embodiment of the light-emitting device of the present invention.

Figure 17 is a schematic view showing the preparation of a fourth embodiment of the light-emitting device of the present invention.

Figure 18 is a flow chart showing the preparation of a fourth embodiment of the light-emitting device of the present invention.

Main component symbol description

Illuminating device	100,200,300,400,500,600
Light emitting chip	10
Upper surface	11
lower surface	12
side	13
Luminous layer	20
Luminous powder	twenty one
Microbeads	22,32
Refractive microbeads	33
Reflective beads	34
Light guiding layer	30
The protective layer	40
Expansion membrane	50

Light source module	700, 700a, 700b, 700c
Substrate	1
First electrode	3
Second electrode	5
lens	7
Reflective cup	9
Cup bottom	91
Cup wall	92
Reflective surface	920

The invention will be further illustrated by the following detailed description in conjunction with the accompanying drawings.

Detailed ways

For the sake of clarity and clarity, where appropriate, the same reference numerals are used to identify corresponding or similar elements in different drawings. In addition, many specific details are mentioned in the specification in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those skilled in the art that the embodiments described herein may also be practiced without these specific details. In other instances, some methods, procedures, and components have not been described in detail in order not to obscure the technical features being described. The schema does not necessarily need to be the same as the size of the object. In order to better illustrate the details and technical features, the proportions of the specific parts of the drawing may be magnified. The description in the specification is not to be construed as limiting the scope of the embodiments described herein.

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment of the present invention. The light emitting device 100 includes an illuminating wafer 10, a luminescent layer 20, a light guiding layer 30, and a protective layer 40. The luminescent wafer 10 has an upper surface 11, a lower surface 12 and a side surface 13. The light emitting layer 20 is formed on the upper surface 11 of the light emitting wafer 10. The light guiding layer 30 is formed on the side surface 13 of the light emitting wafer 10. The protective layer 40 covers the light emitting layer 20 and the light guiding layer 30.

The light-emitting wafer 10 has a thickness of from 90 μm to 600 μm. The light-emitting layer 20 has a thickness of 10 μm to 650 μm. The light emitting layer 20 includes a plurality of luminescent particles 21 .

The luminescent particles 21 are capable of absorbing light emitted from the luminescent wafer 10 to form light of a specific color. Further, the light emitted by the light-emitting chip that is not absorbed by the luminescent particles 21 can be mixed with the light emitted by the luminescent particles 21 to form a color light desired by the user.

It can be understood that, in order to uniformly disperse the luminescent particles 21 in the luminescent layer 20, the luminescent layer 20 does not contain a binder (glue), so that the luminescent particles 21 can be uniformly dispersed in the The periphery of the luminescent wafer 10 is described. The binder is, for example, an epoxy resin, an organic polymer, a silica gel material or the like.

In the present embodiment, the luminescent particles 21 include a phosphor.

The phosphor is, for example, a sulfide phosphor or a non-sulfide phosphor. The non-sulfide phosphor is, for example, but not limited to, Yttrium Aluminum Garnet (YAG), Terbium Aluminum Garnet (TAG), nitride or silicic acid. One of the salts or a combination between them.

The thickness of the light guiding layer 30 is 10 μm to 650 μm. The light guiding layer 30 includes a plurality of luminescent particles 31 and a plurality of beads 32. The light guiding layer 30 also contains no binder. The binder is, for example, an epoxy resin, an organic polymer, a silica gel material or the like.

It can be understood that the components and functions of the luminescent particles 31 of the light guiding layer 30 and the luminescent particles 21 of the luminescent layer 20 are the same and will not be described herein.

The microbeads 32 include one of reflective bead 34 (see FIG. 2), refractive microbead 33 (see FIG. 2), or a combination therebetween. The reflective beads 34 are, for example, reflective glass beads or reflective ceramic beads. The refractive beads 33 are refractive glass beads and refractive ceramic beads. The refractive glass microbeads have a refractive index of 1.5 to 2.5. The reflective glass microspheres comprise one of a metal material, a metal compound material, or a combination therebetween.

It will be appreciated that in other embodiments, the reflective glass microbeads are also capable of being plated directly onto the surface of the body with one of a metallic material, a metallic compound material, or a combination therebetween. The metal material includes aluminum, silver or nickel. The metal compound material includes barium sulfate. The metal material, the metal compound material or a combination thereof is formed on the surface of the reflective glass microsphere by using electroplating, vacuum coating or powder surface coating, so that the surface of the reflective glass microsphere is smooth, and further Increased reflectivity, in addition to increase thermal conductivity and help dissipate heat.

The refractive microbead and the reflective microbead comprise alumina (Al2O3), aluminum nitride (AlN), cerium oxide (SiO2), lanthanum carbide (SiC), zirconia (ZrO3), cerium (Si) One of diamond (C), boron nitride (NB), boron carbide (C4B), and boron oxide (B2O3) or a combination therebetween.

It can be understood that the reflective ceramic microbeads themselves have the ability to reflect light, and the refractive ceramic microbeads have transmissivity. Further, the reflective ceramic microbeads are capable of attaching one of a metal material, a metal compound material, or a combination thereof to the surface thereof. The metal material includes aluminum, silver or nickel. The metal compound material includes barium sulfate. The metal material, the metal compound material or a combination thereof is formed on the surface of the reflective ceramic microsphere by using electroplating, vacuum coating or powder surface coating, so that the surface of the reflective ceramic microsphere is smooth, and further Increased reflectivity, in addition to increase thermal conductivity and help dissipate heat.

It can be understood that, in order to achieve the effect of increasing the luminous intensity, the material of the microbeads 32 has a high light transmittance for light emitted from the light-emitting wafer 10 such as blue light.

It can be understood that, in order to reduce the light leakage problem of the side surface of the luminescent wafer 10 and improve the luminous efficiency and the illuminating brightness of the luminescent wafer 10, the weight ratio of the luminescent particles 31 to the microbeads 32 is 5:100- 50:100.

The luminescent particles 31 have a particle diameter of 0.1 μm to 100 μm. The beads 32 have a particle diameter of from 5 μm to 600 μm.

In the present embodiment, the microbeads 32 are reflective glass microspheres, and the light guiding layer 30 has a layer of the reflective glass microbeads. The reflective glass beads are adhered to the side 10 of the light-emitting wafer 10. The particle size of the reflective glass bead is greater than or equal to the thickness of the light guiding layer 30. Therefore, most of the light emitted by the light emitting chip 10 on the side surface is reflected to the light emitting layer 20 via the reflective glass microbead. Thereby, the light-emitting wafer 10 is greatly reduced in light emitted from the side surface 13, thereby improving the luminous efficiency and the light-emitting brightness of the light-emitting device 100.

It will be appreciated that the microbeads 32 comprise one of solid microbeads, hollow microbeads or a combination therebetween. The microbeads 32 can be transparent or have a color. The microbeads 32 have a smooth and rounded surface, and the microbeads 32 are spherical, ellipsoidal, square or other shapes.

In order to increase luminous efficiency and luminance, the microbeads 32 are preferably spherical.

In order to prevent the surface of the light-emitting layer 20 and the light guiding layer 30 from being scratched, at least one of the protective layers 40 is formed on the surface of the light-emitting layer 20 and the light guiding layer 30. The protective layer 40 covers the upper surface and the side surface of the light emitting layer 20 and extends over the upper surface and the side surface of the light guiding layer 30.

It can be understood that the protective layer 40 is a polymer material layer to isolate the light-emitting layer 20 and the light guiding layer 30 from the outside, thereby avoiding external influences and pollution. The polymer material is, for example, a resin, a silica gel or other material having a soft material. The resin may be, for example, an epoxy resin having a low mixing ratio of a hardener. Preferably, the mass mixing ratio of the hardener and the epoxy resin is 1:1 or 1:4.

Referring to Figure 2, a cross-sectional view of a light emitting device 200 in accordance with a second embodiment of the present invention is shown. The light emitting device 200 includes a light emitting chip 10, a light emitting layer 20, a light guiding layer 30, and a protective layer 40. The light-emitting device 200 provided in this embodiment is substantially identical in structure to the light-emitting device 100 of the first embodiment. The light-emitting layer 20 comprises a plurality of luminescent particles 21 and a plurality of micro-beads 22, the light-guiding layer 30 having a plurality of micro-beads 32, the multi-layered microbeads 32 comprising at least one layer of reflective micro-beads The beads 34 and the at least one layer of refractive beads 33, and the beads 32 have a particle size smaller than the thickness of the light-emitting wafer 10.

In this embodiment, the beads 22 of the light-emitting layer 20 are the refractive glass beads. Therefore, the light emitted from the light-emitting wafer 10 can be more concentrated toward the outside of the light-emitting device 200, thereby improving its light-emitting luminance and luminous efficiency.

The reflective bead 34 and the reflective bead 34 are adhered to the side surface 13 of the light emitting wafer 10.

It can be understood that, in order to enable the light emitted by the illuminating wafer 10 on the side surface 13 to be more irradiated toward the luminescent layer 20, the at least one reflective microbead 34 and the at least one refracting microbead 33 The light path directions emitted from the light-emitting wafers 10 are sequentially arranged, that is, the at least one layer of the refractive beads 33 are positioned above the at least one reflective type beads 34.

Referring to Figure 3, a cross-sectional view of a light emitting device 300 in accordance with a third embodiment of the present invention is shown. The light emitting device 300 includes a light emitting chip 10, a light emitting layer 20, a light guiding layer 30, and a protective layer 40. The light-emitting device 300 provided in this embodiment substantially conforms to the structure of the light-emitting device 100 of the first embodiment. The light-emitting layer 20 includes a plurality of luminescent particles 21 and a plurality of micro-beads 22, the light-guiding layer 30 has a layer of refractive beads 33, and the refractive beads 33 have a larger particle diameter than It is equal to the thickness of the light-emitting wafer 10.

In the present embodiment, the microbeads 22 in the light-emitting layer 20 are the refractive glass microbeads. Therefore, the light emitted from the light-emitting wafer 10 can be more concentrated toward the outside of the light-emitting device 200, thereby improving its light-emitting luminance and luminous efficiency.

It can be understood that the refractive beads 33 are adhered to the side surface 13 of the light-emitting chip 10 in order to enable the light emitted from the light-emitting wafer 10 on the side surface 13 to be irradiated more toward the light-emitting layer 20 .

Referring to Figure 4, a cross-sectional view of a light emitting device 400 in accordance with a fourth embodiment of the present invention is shown. The light emitting device 400 includes a light emitting chip 10, a light emitting layer 20, a light guiding layer 30, and a protective layer 40. The light-emitting device 400 provided in this embodiment substantially conforms to the structure of the light-emitting device 100 of the first embodiment. The light-emitting layer 20 includes a plurality of luminescent particles 21 and a plurality of micro-beads 22, the light-guiding layer 30 having at least two layers of refractive beads 33, and a particle size of the refractive beads 33. Less than the thickness of the luminescent wafer 10.

In the present embodiment, the microbeads 22 in the light-emitting layer 20 are the refractive glass microbeads. Therefore, the light emitted from the light-emitting wafer 10 can be more concentrated toward the outside of the light-emitting device 200, thereby improving its light-emitting luminance and luminous efficiency.

The refractive type microbeads 33 are adhered to the side surface 13 of the light emitting wafer 10.

It can be understood that, in order to enable the light emitted from the side surface 13 of the light-emitting chip 10 to be irradiated more toward the light-emitting layer 20, the direction of the light path emitted from the light-emitting chip 10 from the light-emitting chip 10 Arrange in order.

Referring to Figure 5, a cross-sectional view of a light emitting device 500 in accordance with a fifth embodiment of the present invention is shown. The light emitting device 500 includes a light emitting chip 10, a light emitting layer 20 and a light guiding layer 30. The light emitting chip 10, the light emitting layer 20, and the light guiding layer 30 are substantially identical in structure to the light emitting device 300 of the third embodiment. The difference is that the surface of the light-emitting layer 20 and the light-guiding layer 30 does not form a protective layer 40 (refer to FIG. 3 ), thereby preventing the protective layer 40 ( FIG. 3 ) from being reduced by heat yellowing. The luminous efficiency of the wafer 10 and its lifetime are reduced.

In the present embodiment, the microbeads 22 in the light-emitting layer 20 are the refractive glass microbeads. Therefore, the light emitted from the light-emitting wafer 10 can be more concentrated toward the outside of the light-emitting device 500, thereby improving its light-emitting luminance and luminous efficiency.

The refractive type microbeads 33 are adhered to the side surface 13 of the light emitting wafer 10.

It can be understood that, in order to enable the light emitted from the side surface 13 of the light-emitting chip 10 to be irradiated more toward the light-emitting layer 20, the direction of the light path emitted from the light-emitting chip 10 from the light-emitting chip 10 Arrange in order.

Referring to Figure 6, a cross-sectional view of a light emitting device 600 in accordance with a sixth embodiment of the present invention is shown. The light emitting device 600 includes a light emitting chip 10, a light emitting layer 20 and a light guiding layer 30. The luminescent wafer 10, the luminescent layer 20, and the light guiding layer 30 are substantially identical in structure to the illuminating device 400 of the fourth embodiment. The difference is that the surface of the light-emitting layer 20 and the light-guiding layer 30 does not form a protective layer 40 (refer to FIG. 4), thereby preventing the protective layer 40 (refer to FIG. 4) from being reduced by heat yellowing. The luminous efficiency of the wafer 10 and its lifetime are reduced.

In the present embodiment, the microbeads 22 in the light-emitting layer 20 are the refractive glass microbeads. Therefore, the light emitted from the light-emitting chip 10 can be more concentrated toward the outside of the light-emitting device 600, thereby improving its light-emitting luminance and luminous efficiency.

The refractive type microbeads 33 are adhered to the side surface 13 of the light emitting wafer 10.

It can be understood that, in order to enable the light emitted from the side surface 13 of the light-emitting chip 10 to be irradiated more toward the light-emitting layer 20, the direction of the light path emitted from the light-emitting chip 10 from the light-emitting chip 10 Arrange in order.

Referring to FIG. 7, a schematic diagram of a light source module 700 according to a first embodiment of the present invention is shown. The light source module 700 includes a substrate 1, at least one first electrode 3, at least one second electrode 5, and at least one light emitting device 100 of the first embodiment (refer to FIG. 1). The at least one first electrode 3 is disposed on the substrate 1 at intervals. The lower surface 12 of each of the luminescent wafers 10 is provided with two opposite second electrodes 5. The first electrode 3 is electrically connected to the second electrode 5 .

It is to be understood that, in other embodiments, the at least one light emitting device 100 may also be selected from one of the light emitting devices in the first to sixth embodiments described above or a combination therebetween.

Referring to FIG. 8, a schematic diagram of a light source module 700a according to a second embodiment of the present invention is shown. The light source module 700a provided in this embodiment has substantially the same structure as the light source module 700 of the first embodiment. The difference is that the surface of the light-emitting layer 20 and the light-guiding layer 30 of the at least one light-emitting device is not formed with the protective layer 40, thereby preventing the protective layer 40 from reducing the luminous efficiency and the reduction of the light-emitting efficiency of the light-emitting chip 10. The light source module 700a further includes a lens 7 formed above the light emitting layer 20.

It is to be understood that, in other embodiments, the at least one illuminating device may also be selected from one of the illuminating devices in the first to sixth embodiments described above or a combination therebetween. Referring to FIG. 9, a schematic diagram of a light source module 700b according to a third embodiment of the present invention is shown. The light source module 700b provided in this embodiment is substantially identical in structure to the light source module 700 of the first embodiment. The light source module 700b further includes a reflective cup 9, and the basic 1, the at least first electrode 3, the second electrode 5, and the at least one light emitting device 100 (refer to FIG. 1) It is disposed in the reflective cup 9.

The reflector cup 9 includes a cup bottom 91 and a cup wall 92 extending obliquely upward from the cup bottom 91.

The cup wall 92 has a reflective surface 920 that faces the illumination device 100. The reflective surface 920 is made of a specularly reflective material. The specularly reflective material is a metallic material. The metal material includes gold, silver, aluminum, chromium, copper, tin or nickel.

The reflector cup 9 is an axisymmetric pattern. The light emitting device 100 is disposed on a center of symmetry of the reflective cup 9.

It is to be understood that, in other embodiments, the at least one light emitting device 100 may also be selected from one of the light emitting devices in the first to sixth embodiments described above or a combination therebetween.

Referring to FIG. 10, a schematic diagram of a light source module 700c according to a fourth embodiment of the present invention is shown. The light source module 700c provided in this embodiment has substantially the same structure as the light source module 700b of the third embodiment. The difference is that the surface of the light-emitting layer 20 and the light-guiding layer 30 of the at least one light-emitting device is not formed with the protective layer 40, thereby preventing the protective layer 40 from reducing the luminous efficiency and the reduction of the light-emitting efficiency of the light-emitting chip 10. The light source module 700c further includes a lens 7 formed above the light emitting layer 20.

In this embodiment, the lens 7 can be formed on the upper surface of the light emitting layer 20 of the at least one light emitting device, and the at least one light emitting device and the lens 7 are disposed in the reflective cup 9.

It will be appreciated that in other embodiments, the lens 7 can also be mounted above the cup wall 92 of the reflector cup 9.

It is to be understood that, in other embodiments, the at least one illuminating device may also be selected from one of the illuminating devices in the first to sixth embodiments described above or a combination therebetween.

The light-emitting device of the first embodiment to the fourth embodiment can be applied to a backlight module (not shown). The backlight module includes a backlight module, including a back plate, a light-emitting device, and a light-emitting device. Diffuser plate. The light emitting device is mounted in the backboard. The diffusion plate is mounted on the back plate and above the light emitting device.

It can be understood that, since the backlight module has any of the light-emitting devices of Embodiments 1 to 4, the light measured by the light-emitting device from the side will be guided to the diffusion plate, thereby improving the brightness and the luminous efficiency. .

In other embodiments, the light-emitting devices of the first to fourth embodiments described above can also be applied to a side-entry backlight module.

Referring to FIG. 11 and FIG. 12, a preparation method of a first embodiment of a light-emitting device 100 of the present invention includes the following steps:

Step S101, providing a plurality of light-emitting wafers 10, each of the light-emitting wafers 10 having an upper surface 11, a lower surface 12 and a side surface 13;

Step S102, attaching the lower surface 12 of the luminescent wafer 10 to an expansion film 50;

Step S103, uniformly dispersing the microbeads 32 in the gap formed by the upper surface 11 of the luminescent wafer 10 and the adjacent illuminating wafer 10;

Step S104, removing the beads 32 that are not adhered to the expansion film 50;

Step S105, applying a liquid phase containing the luminescent particles 21, 31 to the upper surface 11 of the luminescent wafer 10 and a gap formed by the adjacent luminescent wafer 10;

Step S106, removing the liquid, so that the luminescent particles 21, 31 and the microbeads 32 are condensed into a block, and forming a luminescent layer 20 and the illuminating chip on the upper surface 11 of the luminescent wafer 10. The side surface 13 of 10 forms a light guiding layer 30;

Step S107, coating the polymer material with the light emitting layer 20 and the light guiding layer 30;

Step S108, cutting at a corresponding position to load the microbeads 32 on the side surface 13 of the luminescent wafer 10.

It can be understood that the expansion film 50 is a commonly used material in the field of crystal expansion. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, Film made of PA), polyvinyl chloride (PVC), polyethylene, polypropylene, polystyrene or other resins. The expanded film 50 further includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

As can be understood by those skilled in the art, the UV film is applied to a surface of a film substrate such as PET, PVC, PO, or polyethylene vinyl acetate (EVA). When the PO film substrate is used, the obtained UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the taking of the light-emitting wafer 10. When the PET film substrate is used, the prepared UV film can be used in a clean room, is suitable for cutting on wafers, glass, ceramic plates, and is peeled off without residue after being irradiated by a UV light source.

It can be understood that the expansion film 50 has a double-adhesive property, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion film adhered on the surface of the light-emitting chip 10. 50, and can ensure the flatness between the luminescent wafers 10. It can be understood that after the removal of the expansion film 50 on the light-emitting wafer 10, the surface cleaning of the semiconductor wafer 10 after the removal of the expansion film 50 is further included.

In the present embodiment, the microbeads 32 are reflective microbeads 34, and the reflective microbeads 34 are made of reflective glass microbeads. It will be appreciated that the microbeads 32 shown in other embodiments may also be reflective ceramic microbeads. The liquid is a gum-free water or a volatile solvent selected from one of an ether, an alcohol or a ketone or a combination thereof. The glue is, for example, an epoxy resin or a silicone material. The liquid phase application method of the luminescent particles 21, 31 is, for example, but not limited to, spraying, dipping, or the like. It can be understood that the immersion method is mainly by placing the luminescent wafer 10 in a liquid container (not shown) containing no glue, so that the luminescent particles 21, 31 are settled or attached to the luminescence. The upper surface 11, the lower surface 12, and the side surface 13 of the wafer 10.

Before the step of applying the liquid phase containing the luminescent particles 21, 31 to the upper surface of the luminescent wafer 10 and the gap formed by the adjacent luminescent wafer 10, further comprising the luminescent particles 21, The refractive glass microbeads (not shown) are added to the liquid phase of 31. Therefore, the upper surface of the luminescent wafer 10 can be loaded with at least one layer of the refractive glass microbeads (not shown), and the side of the luminescent wafer 10 can be loaded with a plurality of layers of the refracting glass beads (Fig. Not shown), thereby improving the luminous efficiency and the luminance of the light-emitting device 100.

It will be appreciated that the step of removing the liquid is primarily by pumping, draining or evaporating the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so that the luminescent particles 21, 31 and the microbeads 32 and the luminescent particles 21, 31 can be tightly coupled by Van der Waals force. together.

It can be understood that when the particle diameter of the microbeads 32 is greater than or equal to the thickness of the luminescent wafer 10, the side surface 13 of the luminescent wafer 10 carries at least one layer of the microbeads 32. When the particle diameter of the microbeads 32 is smaller than the thickness of the light emitting wafer 10, the side faces 13 of the light emitting wafer 10 are loaded with a plurality of layers of the microbeads 32.

It is to be understood that the components and structures of the luminescent particles 21, 31, the beads 32, and the protective layer 40 are identical to those of the first embodiment, and are not described herein again.

Referring to FIG. 13 and FIG. 14, a preparation method of a second embodiment of a light-emitting device 200 of the present invention includes the following steps:

Step S201, providing a plurality of light-emitting wafers 10, each of the light-emitting wafers 10 having an upper surface 11, a lower surface 12 and a side surface 13;

Step S202, the lower surface 11 of the luminescent wafer 10 is adhered to an expansion film 50;

Step S203, uniformly dispersing the microbeads 32 in the gap formed by the upper surface 11 of the luminescent wafer 10 and the adjacent illuminating wafer 10;

Step S204, removing the beads 32 that are not adhered to the expansion film 50;

Step S205, applying a liquid phase containing the luminescent particles 21, 31 to the upper surface 11 of the luminescent wafer 10 and a gap formed by the adjacent luminescent wafer 10;

Step S206, applying a liquid phase containing the microbeads 32 and the luminescent particles 21, 31 to the upper surface 11 of the luminescent wafer 10 and a gap formed by the adjacent illuminating wafer 10;

Step S207, removing the liquid, so that the luminescent particles 21, 31 and the microbeads 32 are condensed into a block, and forming a luminescent layer 20 and the illuminating chip on the upper surface 11 of the luminescent wafer 10. The side surface 13 of 10 forms a light guiding layer 30;

Step S208, coating the polymer material with the light emitting layer 20 and the light guiding layer 30;

Step S209, cutting at a corresponding position to load the microbeads 32 on the side surface 13 of the luminescent wafer 10.

It can be understood that the expansion film 50 is a commonly used material in the field of crystal expansion. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, Film made of PA), polyvinyl chloride (PVC), polyethylene, polypropylene, polystyrene or other resins. The expanded film 50 further includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

As can be understood by those skilled in the art, the UV film is applied to a surface of a film substrate such as PET, PVC, PO, or polyethylene vinyl acetate (EVA). When the PO film substrate is used, the obtained UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the taking of the light-emitting wafer 10. When the PET film substrate is used, the prepared UV film can be used in a clean room, is suitable for cutting of wafers, glass, ceramic plates, and is peeled off without residue after being irradiated by a UV light source.

It can be understood that the expansion film 50 has a double-adhesive property, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion film adhered on the surface of the light-emitting chip 10. 50, and can ensure the flatness between the luminescent wafers 10. It can be understood that after the removal of the expansion film 50 on the light-emitting wafer 10, the surface cleaning of the semiconductor wafer 10 after the removal of the expansion film 50 is further included.

In the present embodiment, the microbeads 32 include reflective beads 34 and refractive beads 33, the reflective beads 34 are reflective glass beads, and the refractive beads 33 are made of refractive glass micro. Beads. In step S203, the microbeads 32 are made of reflective beads 34, and in step S206, the microbeads 32 are made of refractive beads 33. It is to be understood that in other embodiments, the illustrated microbeads 32 may also be reflective ceramic microbeads, which may also be refractive ceramic microbeads. Therefore, the light guiding layer 30 can form at least two microbeads 32, and the reflective bead 34 and the at least one refractive microbead 33 are sequentially arranged from the optical path of the luminescent wafer 10. That is, the at least one layer of refractive beads 33 is located above the reflective beads 34. Therefore, the light emitted from the side surface of the light-emitting chip 10 can be more irradiated toward the light-emitting layer 20, thereby improving the light-emitting luminance and the light-emitting efficiency of the light-emitting device.

The liquid is a gum-free water or a volatile solvent selected from one of an ether, an alcohol or a ketone or a combination thereof. The glue is, for example, an epoxy resin or a silicone material. The liquid phase application method of the luminescent particles 21, 31 is, for example, but not limited to, spraying, dipping, or the like. It can be understood that the immersion method is mainly by placing the luminescent wafer 10 in a liquid container (not shown) containing no glue, so that the luminescent particles 21, 31 are settled or attached to the luminescence. The upper surface 11, the lower surface 12, and the side surface 13 of the wafer 10.

It will be appreciated that the step of removing the liquid is primarily by pumping, draining or evaporating the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so that the luminescent particles 21, 31 and the microbeads 32 and the luminescent particles 21, 31 can be tightly coupled by Van der Waals force. together.

Further, when the particle diameter of the microbeads 32 is greater than or equal to the thickness of the luminescent wafer 10, at least one layer of the microbeads 32 is loaded on the side of the luminescent wafer 10. When the particle diameter of the microbeads 32 is smaller than the thickness of the light emitting wafer 10, the side faces of the light emitting wafer 10 are loaded with the plurality of microbeads 32.

It is to be understood that the components and structures of the luminescent particles 21, 31, the beads 32, and the protective layer 40 are identical to those of the first embodiment, and are not described herein again.

Referring to FIG. 15 and FIG. 16, a method for fabricating a third embodiment of a light-emitting device 300 of the present invention includes the following steps:

Step S301, providing a plurality of light-emitting wafers 10, each of the light-emitting wafers 10 having an upper surface 11, a lower surface 12 and a side surface 13;

Step S302, attaching the lower surface 12 of the luminescent wafer 10 to an expansion film 50;

Step S303, applying a liquid phase containing the microbeads 32 and the luminescent particles 21, 31 to the upper surface 11 of the luminescent wafer 10 and the gap formed by the adjacent luminescent wafers 10;

Step S304, removing the liquid, so that the luminescent particles 21, 31 and the microbeads 32 are condensed into a block, and forming a luminescent layer 20 and the illuminating chip on the upper surface 11 of the luminescent wafer 10. The side surface 13 of 10 forms a light guiding layer 30;

Step S305, coating the polymer material with the light emitting layer 20 and the light guiding layer 30;

Step S306, cutting at a corresponding position to load the microbeads 32 on the side surface 13 of the luminescent wafer 10.

In other embodiments, step S302 may be replaced by soldering the lower surface 12 of the light emitting wafer 10 to the substrate 1 of the light source module 700, 700a, 700b, 700d through a die bonding machine (not shown), or It is the back panel of the backlight module (not shown).

The step S305 is to form the protective layer 40 on the surface of the light-emitting layer 20 and the light-guiding layer 30, so that the light-emitting layer 20 and the light-guiding layer 30 are isolated from the outside, thereby avoiding the outside world. Impact and pollution.

It can be understood that in other embodiments, the step S305 can be omitted to avoid the thermal yellowing of the protective layer 40 to reduce the luminous efficiency of the light-emitting chip 10 and reduce the service life thereof.

It can be understood that the expansion film 50 is a commonly used material in the field of crystal expansion. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, Film made of PA), polyvinyl chloride (PVC), polyethylene, polypropylene, polystyrene or other resins. The expanded film 50 further includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

As can be understood by those skilled in the art, the UV film is applied to a surface of a film substrate such as PET, PVC, PO, or polyethylene vinyl acetate (EVA). When the PO film substrate is used, the obtained UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the taking of the light-emitting wafer 10. When the PET film substrate is used, the prepared UV film can be used in a clean room, is suitable for cutting of wafers, glass, ceramic plates, and is peeled off without residue after being irradiated by a UV light source.

It can be understood that the expansion film 50 has a double-adhesive property, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion film adhered on the surface of the light-emitting chip 10. 50, and can ensure the flatness between the luminescent wafers 10. It can be understood that after the removal of the expansion film 50 on the light-emitting wafer 10, the surface cleaning of the semiconductor wafer 10 after the removal of the expansion film 50 is further included.

The liquid is a gum-free water or a volatile solvent selected from one of an ether, an alcohol or a ketone or a combination thereof. The glue is, for example, an epoxy resin or a silicone material. The liquid phase application method of the luminescent particles 21, 31 is, for example, but not limited to, spraying, dipping, or the like. It can be understood that the immersion method is mainly by placing the luminescent wafer 10 in a liquid container (not shown) containing no glue, so that the luminescent particles 21, 31 are settled or attached to the luminescence. The upper surface 11, the lower surface 12, and the side surface 13 of the wafer 10.

It will be appreciated that the step of removing the liquid is primarily by pumping, draining or evaporating the liquid at a temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so that the luminescent particles 21, 31 and the microbeads 32 and the luminescent particles 21, 31 can be tightly coupled by Van der Waals force. together.

It can be understood that when the particle diameter of the microbeads 32 is greater than or equal to the thickness of the luminescent wafer 10, the side surface 13 of the luminescent wafer 10 carries at least one layer of the microbeads 32. When the particle diameter of the microbeads 32 is smaller than the thickness of the light emitting wafer 10, the side surface 13 of the light emitting wafer 10 is loaded with a plurality of layers of the microbeads 32. In the present embodiment, the microbeads 32 are refractive beads 33, and the refractive beads 33 are made of refractive glass beads. In other embodiments, the refractive beads 33 may also be of a refractive type. Ceramic beads.

It is to be understood that the components and structures of the luminescent particles 21, 31, the beads 32, and the protective layer 40 are identical to those of the first embodiment, and are not described herein again.

Referring to FIG. 17 and FIG. 18, a preparation method of a fourth embodiment of a light-emitting device 400 of the present invention includes the following steps:

Step S401, providing a plurality of light-emitting wafers 10, each of the light-emitting wafers 10 having an upper surface 11, a lower surface 12 and a side surface 13;

Step S402, attaching the lower surface 12 of the luminescent wafer 10 to an expansion film 50;

Step S403, applying a liquid phase containing the beads 32 and the luminescent particles 21, 31 to the upper surface 11 of the luminescent wafer 10 and the gap formed by the adjacent luminescent wafer 10;

Step S404, repeatedly applying the liquid phase containing the microbeads 32 and the luminescent particles 21, 31 to the gap formed by the adjacent illuminating wafers 10;

Step S405, removing the liquid to condense the luminescent particles 21, 31 and the microbeads 32 into a block, and forming a luminescent layer 20 on the illuminating wafer 10 on the upper surface 11 of the luminescent wafer 10. Side surface 13 forms a light guiding layer 30;

Step S406, coating the polymer material with the light emitting layer 20 and the light guiding layer 30;

Step S407, cutting at a corresponding position to load the microbeads 32 on the side surface 13 of the luminescent wafer 10.

In other embodiments, step S402 may be replaced by soldering the lower surface 12 of the light emitting wafer 10 to the substrate 1 of the light source module 700, 700a, 700b, 700d through a die bonding machine (not shown), or It is the back panel of the backlight module (not shown).

The step S406 is to form the protective layer 40 on the surface of the light-emitting layer 20 and the light guiding layer 30, so that the light-emitting layer 20 and the light guiding layer 30 are isolated from the outside, thereby avoiding the outside world. Impact and pollution.

It can be understood that in other embodiments, the step S406 can be omitted to avoid the thermal yellowing of the protective layer 40 to reduce the luminous efficiency of the light emitting wafer 10 and reduce the service life thereof.

It can be understood that the expansion film 50 is a commonly used material in the field of crystal expansion. The material of the expansion film 50 is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA), and nylon (Polyamide, Film made of PA), polyvinyl chloride (PVC), polyethylene, polypropylene, polystyrene or other resins. The expanded film 50 further includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.

As can be understood by those skilled in the art, the UV film is applied to a surface of a film substrate such as PET, PVC, PO, or polyethylene vinyl acetate (EVA). When the PO film substrate is used, the obtained UV film is stable, has high adhesion, and can be reduced in viscosity after being irradiated by a UV curing machine to facilitate the taking of the light-emitting wafer 10. When the PET film substrate is used, the prepared UV film can be used in a clean room, is suitable for cutting of wafers, glass, ceramic plates, and is peeled off without residue after being irradiated by a UV light source.

It can be understood that the expansion film 50 has a double-adhesive property, so that the expanded film 50 after the crystal expansion can be pasted on a surface mount device (not shown) to remove the expansion film adhered on the surface of the light-emitting chip 10. 50, and can ensure the flatness between the luminescent wafers 10. It can be understood that after the removal of the expansion film 50 on the light-emitting wafer 10, the surface cleaning of the semiconductor wafer 10 after the removal of the expansion film 50 is further included.

The liquid is a gum-free water or a volatile solvent selected from one of an ether, an alcohol or a ketone or a combination thereof. The glue is, for example, an epoxy resin or a silicone material. The liquid phase application method of the luminescent particles 21, 31 is, for example, but not limited to, spraying, dipping, or the like. It can be understood that the immersion method is mainly by placing the luminescent wafer 10 in a liquid container (not shown) containing no glue, so that the luminescent particles 21, 31 are settled or attached to the luminescence. The upper surface 11, the lower surface 12, and the side surface 13 of the wafer 10.

It will be appreciated that the step of removing the liquid is primarily by pumping, draining or evaporating the liquid at a certain temperature. Preferably, in this embodiment, the liquid is removed by evaporation, so that the luminescent particles 21, 31 and the microbeads 32 and the luminescent particles 21, 31 can be tightly coupled by Van der Waals force. together.

It can be understood that when the particle diameter of the microbeads 32 is greater than or equal to the thickness of the luminescent wafer 10, the side surface 13 of the luminescent wafer 10 carries at least one layer of the microbeads 32. When the particle diameter of the microbeads 32 is smaller than the thickness of the light emitting wafer 10, the side surface 13 of the light emitting wafer 10 is loaded with a plurality of layers of the microbeads 32. In the present embodiment, the microbeads 32 are refractive beads 33, and the refractive beads 33 are made of refractive glass beads. In other embodiments, the refractive beads 33 may also be of a refractive type. Ceramic beads.

It is to be understood that the components and structures of the luminescent particles 21, 31, the beads 32, and the protective layer 40 are identical to those of the first embodiment, and are not described herein again.

In the method for fabricating the light-emitting device of the present invention, the light-emitting layer and the light-guiding layer can be directly formed on the surface of the light-emitting wafer by using the mutual attraction between the microbeads and the luminescent particles. In addition, since the luminescent particles and the microbeads are prepared by dispersing a solvent without a gel, the luminescent particles and the microbeads can be uniformly mixed, thereby making the luminescent layer and the light guiding layer uniform. Dispersion, thereby enabling improved luminous efficiency of the illuminating device and avoiding subsequent squeegee processing. In summary, the method for fabricating the light-emitting device of the present invention is simple in process and low in cost. The light-emitting device produced by the invention can reduce the side leakage of the light-emitting device and can improve the luminous efficiency and the light-emitting brightness of the light-emitting device.

The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above embodiments, and the above embodiments are merely for explaining the claims. However, the scope of protection of the present invention is not limited to the description. Any changes or substitutions that are easily conceivable within the scope of the present invention are intended to be included within the scope of the present invention.

Claims (16)

1. A light emitting device comprising:

   An illuminating wafer having an upper surface and a side surface;

   a light emitting layer formed on an upper surface of the light emitting wafer;

   A light guiding layer is formed on a side surface of the light emitting wafer, the light guiding layer includes a plurality of luminescent particles and a plurality of beads, and the luminescent layer and the light guiding layer are free of a binder.
2. The light-emitting device according to claim 1, wherein the microbeads have a particle diameter of from 5 μm to 600 μm.
3. The illuminating device according to claim 1, wherein the microbeads comprise one of reflective microbeads, refractive microbeads or a combination thereof.
4. The light-emitting device according to claim 3, wherein the reflective microbeads comprise one of a metal material, a metal compound material, or a combination thereof.
5. The light emitting device according to claim 4, wherein said metal material comprises aluminum, silver or nickel, and said metal compound material comprises barium sulfate.
6. A light emitting device according to claim 3, wherein said light guiding layer comprises at least one layer of reflective beads, at least one layer of refractive glass beads or a combination thereof, said at least one layer of reflective micro The beads and the at least one layer of refractive beads are sequentially arranged from the direction of the light path emitted by the light-emitting wafer.
7. A backlight module comprising:

   a backboard

   A light-emitting device according to any one of claims 1 to 6, mounted in the back sheet;

   A diffusion plate is mounted on the back plate and above the light emitting device.
8. A method of fabricating a light emitting device, comprising the steps of:

   Providing a plurality of light emitting wafers, each of the light emitting wafers having an upper surface and a lower surface;

   Adhering the lower surface of the luminescent wafer to an expanded film;

   Dispersing the beads uniformly in the gap between the upper surface of the luminescent wafer and the adjacent illuminating wafer;

   Removing microbeads that are not adhered to the expansion membrane;

   Applying a liquid phase containing luminescent particles to the upper surface of the luminescent wafer and a gap formed by the adjacent luminescent wafer, the liquid being binder-free water or a volatile solvent;

   Removing the liquid to condense the luminescent particles and the beads into a block and forming a light-emitting layer and a light guiding layer;

   Cutting at a corresponding position to load the beads on the side of the luminescent wafer.
9. The method of producing a light-emitting device according to claim 8, wherein the microbeads comprise one of reflective microbeads, refractive microbeads, or a combination thereof.
10. A method of fabricating a light-emitting device according to claim 9, wherein in said step, a liquid phase containing luminescent particles is applied to an upper surface of said luminescent wafer and a gap formed by said adjacent luminescent wafer And further comprising adding the refractive type microbead to the liquid phase containing the luminescent particles.
11. The method of manufacturing a light-emitting device according to claim 8 or claim 10, wherein when the particle diameter of the microbead is greater than or equal to the thickness of the light-emitting chip, at least one layer of the side surface of the light-emitting chip is loaded The microbeads; when the particle diameter of the microbeads is smaller than the thickness of the light emitting wafer, the side surface of the light emitting wafer is loaded with the plurality of microbeads.
12. A method of fabricating a light emitting device, comprising the steps of:

    Providing a plurality of light emitting wafers, each of the light emitting wafers having an upper surface and a lower surface;

    Forming a lower surface of the luminescent wafer on a substrate;

    Applying a liquid phase containing microbeads and luminescent particles to the upper surface of the luminescent wafer and a gap formed by the adjacent illuminating wafer, the liquid being a binder-free water or a volatile solvent, The microbeads are refractive microbeads;

    Removing the liquid to condense the luminescent particles and the beads into a block and forming a light-emitting layer and a light guiding layer;

    Cutting at a corresponding position to load the beads on the side of the luminescent wafer.
13. The method of manufacturing a light-emitting device according to claim 12, wherein when the particle diameter of the microbead is greater than or equal to the thickness of the light-emitting chip, at least one layer of the micro-bead is loaded on a side surface of the light-emitting chip; When the particle diameter of the microbead is smaller than the thickness of the light emitting wafer, the side surface of the light emitting wafer is loaded with a plurality of layers of the microbeads.
14. A light source module comprising:

    a substrate;

    At least one first electrode mounted on the substrate;

    The light-emitting device according to any one of claims 1 to 6, wherein a lower surface of each of the light-emitting wafers is provided with two opposite second electrodes, and the second electrode is electrically connected to the first electrode.
15. The light source module according to claim 14, wherein the light source module further comprises a lens, and the lens is formed above the light emitting device.
16. The light source module of claim 14, wherein the light source module further comprises a reflector, and the illumination device is disposed in the reflector.

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