WO2019001297A1 - 馈入结构、上电极组件以及物理气相沉积腔室和设备 - Google Patents

馈入结构、上电极组件以及物理气相沉积腔室和设备 Download PDF

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Publication number
WO2019001297A1
WO2019001297A1 PCT/CN2018/091642 CN2018091642W WO2019001297A1 WO 2019001297 A1 WO2019001297 A1 WO 2019001297A1 CN 2018091642 W CN2018091642 W CN 2018091642W WO 2019001297 A1 WO2019001297 A1 WO 2019001297A1
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WO
WIPO (PCT)
Prior art keywords
lead
upper electrode
axis
electrode assembly
target
Prior art date
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Ceased
Application number
PCT/CN2018/091642
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English (en)
French (fr)
Inventor
邓玉春
张超
陈鹏
邱国庆
赵梦欣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2019001297A1 publication Critical patent/WO2019001297A1/zh
Priority to US16/726,023 priority Critical patent/US11107665B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Definitions

  • the present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a feed structure, an upper electrode assembly, and a physical vapor deposition chamber and apparatus.
  • VHF Very high frequency
  • the DC negative pressure on the target can generate plasma by the ionized gas with the aid of the magnetic field, and attract positive ions to bombard the target for sputter deposition.
  • the introduction of VHF RF power can further promote the gas ionization rate, which is beneficial to the gas. Produces a denser film.
  • a feed structure for a physical vapor deposition apparatus comprising:
  • each distribution member is coupled to the second introduction member, and the other end is configured to provide the target to the target power.
  • the first lead-in and the second lead-in are each disposed coaxially with the target.
  • the second lead-in member is provided with a plurality of holes that are symmetric about its center.
  • the plurality of holes are arranged in a multi-turn structure on the second lead-in member, each ring structure includes the same number of holes, and along the center of the second lead-in to the edge The direction of the hole increases in radius.
  • the distribution member has a circular cross section and the distribution member has a diameter of not less than 10 mm.
  • an upper electrode assembly comprising:
  • the method further includes: an RF power source and/or a DC power source coupled to the first lead-in member.
  • the method further includes:
  • a support one end supports the second lead-in member, the other end is used for fixing the target, and the plurality of distribution members are disposed in the support base and configured to couple the target;
  • a magnetron bearing housing mounted to the support seat for converting an external drive along the first axis to an output drive along a second axis, the first axis being offset from the axis of the first lead-through.
  • the support base includes:
  • a support wall having one end supporting the second introduction member and the other end for fixing to the target
  • a spacer layer laterally disposed within the support wall to divide the support wall into a first cavity facing the second lead-in and a second cavity facing the target;
  • the magnetron bearing housing is disposed in the first cavity, and includes:
  • Input shaft receiving the external drive along the first axis
  • An output shaft extending through the spacer layer into the second cavity and outputting the output drive along the second axis, the second axis coincident with an axis of the first lead-in member;
  • the upper electrode assembly further includes:
  • a magnetron assembly is located within the second chamber and mounted on the output shaft.
  • the method further includes:
  • An input shaft of the magnetron bearing housing passes through the second lead-in member and is coupled to an output shaft of the motor.
  • the method further includes:
  • a motor located in the first cavity, and the motor is covered by a shielding structure
  • An input shaft of the magnetron bearing housing is coupled to an output shaft of the motor.
  • the support base includes a support wall and a support cover
  • One end of the support wall is connected to the support cover to form a third cavity, and the other end is used for fixing to the target;
  • the support cover is for supporting the second introduction member
  • the magnetron bearing housing is disposed on the third cavity and covered by the waterproof structure, including:
  • Input shaft receiving the external drive along the first axis
  • An output shaft extending through the spacer layer into the third cavity and outputting the output drive along the second axis, the second axis coincident with an axis of the first lead-in member;
  • the upper electrode assembly further includes:
  • a magnetron assembly is located within the third chamber and mounted on the output shaft.
  • the method further includes:
  • An input shaft of the magnetron bearing housing passes through the support cover and the second lead-through member in sequence and is coupled to an output shaft of the motor.
  • the method further includes:
  • a motor located in the third cavity and covered by a waterproof structure
  • An input shaft of the magnetron bearing housing is coupled to an output shaft of the motor.
  • the method further includes:
  • a shielding plate is disposed on the top end of the shielding cover and is fixed to the top surface of the second introducing member by an insulating spacer, and the first introducing member passes therethrough.
  • a physical vapor deposition chamber comprising:
  • An upper electrode assembly is disposed on top of the chamber body, and the upper electrode assembly employs any of the above upper electrode assemblies.
  • a physical vapor deposition apparatus comprising the above physical vapor deposition chamber.
  • FIG. 1 is a schematic structural view of a feed structure of an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural view of a second introduction member of the feed structure of the embodiment of the present disclosure.
  • FIG. 3 is a simplified schematic diagram of an upper electrode assembly of an embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional structural view of an upper electrode assembly of an embodiment of the present disclosure.
  • FIG 5 is a cross-sectional structural view of a feed structure and a support base of an upper electrode assembly according to an embodiment of the present disclosure.
  • FIG. 6 is a cross-sectional structural view of an upper electrode assembly in accordance with another embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional structural view of an upper electrode assembly in accordance with another embodiment of the present disclosure.
  • FIG. 8 is a cross-sectional structural view of an upper electrode assembly in accordance with another embodiment of the present disclosure.
  • FIG. 9 is a cross-sectional structural view of an upper electrode assembly in accordance with another embodiment of the present disclosure.
  • 211a a first cavity
  • 211b a second cavity
  • 220 magnetron bearing housing
  • Radio Frequency (RF) power and/or Direct Current (DC) power is typically provided to the target through the feed structure.
  • RF Radio Frequency
  • DC Direct Current
  • the feeding structure of the existing Physical Vapor Deposition (PVD) device is generally occupied by the magnetron bearing housing of the upper electrode assembly because the position of the target axis is occupied, and the introduction of the power supply has to be biased.
  • the power supply can only be input from the non-target axis position. This arrangement often affects the film thickness uniformity.
  • the feed structure usually adopts a thin plate-shaped part, and the structure has a large impedance, which easily leads to waste of power. When higher frequency RF power supplies are used, the effects of bias introduced by power and impedance are more prominent.
  • FIG. 1 is a schematic structural view of a feed structure as a component of an upper electrode assembly for more uniformly supplying power to a target to achieve uniform sputtering of a target according to an embodiment of the present disclosure.
  • Shoot is a schematic structural view of a feed structure as a component of an upper electrode assembly for more uniformly supplying power to a target to achieve uniform sputtering of a target according to an embodiment of the present disclosure.
  • the feedthrough structure 100 of the present disclosure includes a first introducer 110, a second introducer 120, and a plurality of dispenses 130.
  • the first introducing member 110 may have a rod-like structure, and the second introducing member 120 may have a plate-like structure.
  • One end of the first lead-in member 110 is coupled to a power source (not shown) to receive power output by the power source (for example, DC power or RF power, etc.), and the other end is coupled to the second lead-in member 120.
  • the sub-assembly 130 may be a metal screw, such as copper, having a diameter of 10 mm or more. The large-section metal screw can reduce the impedance of the transmission path, reduce power consumption, and reduce power waste.
  • the plurality of distribution members 130 are evenly distributed around the axis of the first introduction member 110, and one end of each distribution member 130 is coupled to the second introduction member 120, and the other end is used to couple the target 300 to provide power to the target 300.
  • the axis 310 of the target 300 coincides with the axes of the first and second introducer members 110, 120, and the three are coaxially disposed.
  • the first lead-in member 110 of the feed-in structure of the present embodiment is coupled to the second lead-in member 120 along the axis of the second lead-in member 120.
  • power is supplied to the center of the second lead-in member 120 along the first lead-in member 110, and is uniformly dispersed from the center of the second lead-in member 120 to the edge of the second lead-in member 120.
  • the plurality of distribution members 130 are evenly distributed around the axis of the first introduction member 110, that is, evenly distributed around the axis of the second introduction member 120, and the power source power is evenly distributed to the respective distribution members 130 by the edges of the second introduction member 120.
  • each of the distribution members 130 is also uniformly distributed about the axis 310 of the target 300, and the distribution member 130 uniformly feeds power to the target 300.
  • the feed structure 100 includes six distribution members 130 , but the number is merely an exemplary description. In other examples, the number of the distribution members 130 may be set as needed, such as, but not limited to, eight, 12 1, 16, 24, etc.
  • the axis of the second lead-in member 120 also coincides with the axis 310 of the first lead-in member 110 and the target member 300.
  • the present disclosure is not limited thereto.
  • the shape and size of the second introducing member 120 and the target member 300 may not be identical, and the positions thereof may not be completely opposite.
  • the axis of the second lead-in member 120 may not coincide with the axis 310 of the first lead-in member 110 and the target 300, but the axis of the first lead-in member 110 remains coincident with the axis 310 of the target 300,
  • the plurality of distribution members 130 are evenly distributed around the axis 310, so that the power supply power can be uniformly fed to the target 300.
  • the conventional feed-in structure when assembled to the upper electrode assembly, causes the position of the first lead-in member to be biased due to the position of the axis of the second lead-in member and the target due to the magnetron bearing seat of the upper electrode assembly.
  • the structure of the "biased feed, magnetron center” affects the uniformity of the thickness of the sputtered film.
  • the first lead-in member 110 is fed centrally, and the distribution member 130 is evenly distributed around the axis of the first lead-in member 110 to achieve uniform power distribution.
  • the axis 310 of the target 300 coincides with the axis of the first lead-in member 110, and power can be uniformly fed to the target 300.
  • FIG. 2 is a schematic structural view of a second introduction member of an embodiment of the present disclosure.
  • the second introduction member 120 is provided with a plurality of holes 121 symmetric about its center.
  • the plurality of holes 121 may be arranged in a multi-turn structure on the second lead-in member 120, and the number of the holes 121 included in each ring structure may be the same or different.
  • the radius of the hole 121 is increased in the direction from the center to the edge of the second lead-in member 120. That is, as shown in FIG. 2, in the direction in which the radius of the second introduction member 120 is increased, the diameter of the hole 121 in each of the ring structures is gradually increased.
  • the holes 121 on each turn are evenly arranged in the circumferential direction, and the holes 121 on each turn are aligned with each other in the radial direction.
  • the plurality of holes 121 of the second introduction member 120 are formed in a shape similar to "galaxies", and the second introduction member 120 may be referred to as a "galaxy" circular plate.
  • the plurality of holes 121 of the second lead-in member 120 are arranged in a three-turn structure, and each turn structure includes six holes 121, but this is only an illustrative description, the number of holes of the hole, the number of holes per ring, The size of the holes can be set as needed.
  • the outer periphery of the feedthrough structure 100 is typically covered by a shield structure to eliminate the external effects of power supply.
  • the second lead-in member 120 having the hole 121 can reduce the capacitive reactance between the second lead-in member 120 and the shielding structure on the one hand, reduce power consumption and reduce waste of power; on the other hand, facilitate the second lead-in member 120
  • the installation is beautiful and beautiful.
  • the embodiment 2 of the present disclosure is merely an example of a second lead-in, but the embodiment is not limited thereto.
  • This embodiment does not limit the shape and arrangement of the holes.
  • the second lead-in member has a plurality of holes symmetric about its center, the effect of reducing the capacitive reactance and reducing the power consumption can be achieved.
  • FIG. 3 is a simplified schematic diagram of the upper electrode assembly 200 of the embodiment
  • FIG. 4 is a cross-sectional structural view of the upper electrode assembly 200.
  • the upper electrode assembly 200 includes the feedthrough structure 100 of the previous embodiment for achieving uniform sputtering of the target 300.
  • the upper electrode assembly 200 further includes a radio frequency power source (not shown) and/or a DC power source (not shown) coupled to the first lead-in member 110 in the feed structure 100 for An introducer 110 provides power.
  • the upper electrode assembly 200 of the structure of the present embodiment includes the feed structure 100 of the foregoing embodiment, such that the power provided by the RF power source and/or the DC power source can be fed into the second lead-in member along the first lead-in member 110 during the process.
  • the center of 120 is evenly distributed to each of the distribution members 130 so that power can be uniformly fed into the target 300 through the plurality of distribution members 130.
  • the upper electrode assembly 200 of the structure of the embodiment can not only uniformly feed the RF power into the target 300, but also can uniformly feed the DC power into the target 300.
  • the upper electrode assembly 200 further includes a support base 210 which may be made of an insulating material.
  • a support base 210 which may be made of an insulating material.
  • One end of the support base 210 supports the second lead-in member 120, and the other end is used to fix the target 300.
  • a plurality of distribution members 130 are disposed in the support base and are used to couple the target 300.
  • the upper electrode assembly 200 also includes a magnetron bearing housing 220 that is mounted in the support housing 210 for converting external drive along the first axis to output drive along the second axis.
  • first axis is offset from the axis of the first lead-in member 110 and the second axis coincides with the axis of the first lead-in member 110.
  • the support base 210 may include a support wall 211 and a partition layer 212 .
  • One end of the support wall 211 supports the second lead-in member 120, and the other end is used for fixing to the target 300.
  • the barrier layer 212 is laterally disposed within the support wall 211 to divide the support wall 211 into a first cavity 211a toward the second introduction member 120 and a second cavity 211b toward the target 300.
  • the magnetron bearing housing 220 is disposed in the first cavity 211a, for example, on the barrier layer 212.
  • the magnetron bearing housing 220 includes an input shaft and an output shaft.
  • the input shaft receives an external drive along a first axis.
  • the output shaft extends through the barrier layer 212 into the second cavity 211b and outputs the output drive described above along the second axis.
  • the upper electrode assembly 200 further includes a magnetron assembly 230 located in the second cavity 211b and mounted on the output shaft of the magnetron bearing housing 220.
  • the support base 210 of the embodiment adopts a two-layer structure.
  • the input shaft and the output shaft of the magnetron bearing housing 220 are different shafts, the output shaft is still located at the axis 310 of the target, the input shaft is offset from the axis 310 of the target, and the motor 240 passes.
  • the magnetron bearing housing 220 drives the magnetron assembly 230 to rotate.
  • This "central feed, magnetron bias" structure ensures uniform distribution of power supply on the target 300, and does not affect the normal operation of the magnetron bearing housing 220 and the like.
  • the feedthrough structure 100 may include an introduction ring 140 and a take-off ring 150 in addition to the first introduction member 110, the second introduction member 120, and the plurality of distribution members 130.
  • the second lead-in member 120 is fixed to the upper end of the support base 210 through the introduction ring 140, and forms a first cavity 211a with the partition layer 212 and the upper portion of the support base 210.
  • the plurality of distribution members 130 are disposed inside the support wall 211 and are evenly distributed circumferentially along the support wall 211 , and the upper end thereof is coupled to the second introduction member 120 through the introduction ring 140 .
  • the outlet ring 150 is fixed to the lower end of the support wall 211 by screws, and is coupled to the lower end of the distribution member 130.
  • the target 300 is fixed to the outlet ring 150 by screws, for example, and is coupled to the distribution member 130 via the outlet ring 150. Connected to the entire feed structure 100.
  • the power source fed to the second lead-in member 120 along the first lead-in member 110 is uniformly fed to the target 300 via the lead-in ring 140, the distribution member 130, and the take-off ring 150.
  • the second cavity 211b is sealed between the take-up ring 150 and the lower end of the support wall 211, and between the take-up ring 150 and the target 300, for example, by a seal ring.
  • the upper electrode assembly 200 further includes a motor 240.
  • the motor 240 can be located outside of the first cavity 211a.
  • the input shaft of the magnetron bearing housing 220 passes through the second lead-in member 120 and is coupled to the output shaft of the motor 240.
  • the motor 240 may also be located within the first cavity 211a.
  • the motor 240 may be fixed to the barrier layer 212.
  • the input shaft of the magnetron bearing housing 220 is coupled to the output shaft of the motor 240.
  • the motor 240 is covered by the shield structure 281 such that the interference of the RF power and the DC power to the motor 240 can be shielded.
  • the magnetron bearing housing 220 and the motor 240 are both disposed in the first cavity 211a, which can reduce the number of external components, reduce the overall volume of the upper electrode assembly 200, and save space.
  • the support base 210 includes a support wall 211 and a support cover 213.
  • the first of the support walls 211 is coupled to the support cover 213 to form a third cavity 211c, and the other end is for fixing to the target 300.
  • the support cover 213 is for supporting the second introduction member 120.
  • the magnetron bearing housing 220 may be disposed in the third cavity 211c and covered by the waterproof structure 282.
  • the input shaft of the magnetron bearing housing 220 receives external drive along the first axis, and the output shaft extends through the barrier layer 212 into the third cavity 211c and outputs the output drive described above along the second axis.
  • the magnetron assembly 230 is also located within the third cavity 211c and is mounted on the output shaft of the magnetron bearing housing 220.
  • the support base 210 adopts a single cavity (third cavity 211c) structure, and the volume of the support base 210 can be reduced to some extent, thereby reducing the overall volume of the upper electrode assembly 200, and the structure is more compact and space-saving.
  • the motor 240 is also disposed in two ways.
  • the motor 240 may be located in the third cavity 211c. At this time, the motor 240 also needs to be covered by the waterproof structure 282.
  • the input shaft of the magnetron bearing housing 220 is coupled to the output shaft of the motor 240.
  • the motor 240 may be located outside the third cavity 211c, and the input shaft of the magnetron bearing housing 220 passes through the support cover 213 and the second lead-in member 120 in sequence, and the output of the motor 240. Axis connection.
  • the magnetron bearing housing 220 and the motor 240 are both disposed in the third cavity 211c, which can reduce the number of external components, further reduce the overall volume of the upper electrode assembly 200, and save space.
  • the upper electrode assembly 200 may further include a shield case 250 and a shield plate 260.
  • the shield 250 can be placed on the periphery of the support base 210.
  • the shield plate 260 is secured to the top end of the shield 250, such as by screws, and an electrically conductive connection can be enhanced therebetween using, for example, a RF gasket to define a shielded space.
  • the shielding plate 260 can be fixed to the top surface of the second introducing member 120 through the insulating spacer 262.
  • the insulating spacer 262 has a certain thickness such that the second introducing member 120 and the shielding plate 260 are at a certain distance.
  • the top surface of the shielding plate 260 is also symmetrically mounted with four opening mechanism connecting members 261 for mounting the opening cover bracket.
  • the input shaft of the magnetron bearing housing 220 is coupled to the output shaft of the motor 240 along an axis that is offset from the target axis.
  • the axis deviating from the target axis means an axis that is at a distance from the target axis 310 in the radial direction of the target, parallel to the target axis 310.
  • the present disclosure is not limited thereto, and in other examples, the axis deviating from the target axis may also be an axis extending from the target axis and having an angle with the target axis.
  • the shielding plate is fixed to the top of the second introducing member through the insulating spacer, the distance between the second introducing member and the shielding plate is large, and the opposing area is small, so that the DC power or the RF power consumption can be reduced. Reduce the waste of power.
  • the upper electrode assembly 200 of the present embodiment further includes a photodetection assembly 270 for detecting the rotational state of the magnetron assembly 230.
  • the photodetection assembly 270 includes a reflective plate 271 and a photosensor 272.
  • the reflecting plate 271 may be mounted on the surface of the magnetron assembly 230 facing the partitioning layer 212, and the photosensor 272 may be mounted on the shielding plate 402 to correspond to the position of the reflecting plate 271.
  • a transparent quartz window 273 is opened at a corresponding position of the barrier layer 212 and the second lead-in member 120.
  • the reflection plate 271, the transparent quartz window 273, and the photosensor 272 form a photoelectric sensing path, and detect the rotation state of the magnetron assembly 230.
  • the upper electrode assembly 200 of the present embodiment further includes a magnetic inductive detecting component 290 for detecting the rotational state of the magnetron assembly 230 in place of the photodetecting component.
  • the magnetic inductive sensing assembly 290 includes a magnet 291 and a magnetic proximity switch 292.
  • the magnet 291 is mounted on the edge of the magnetron assembly 230
  • the magnetic proximity switch 292 is mounted on the outside of the support wall 211.
  • the magnetron assembly 230 rotates, the distance between the magnet 291 and the magnetic proximity switch 292 varies with the rotation of the magnet 291.
  • the magnetic proximity switch 292 sends a signal when the two approaches, and the rotation state of the magnetron assembly 230 is detected.
  • Another embodiment of the present disclosure further provides a physical vapor deposition chamber including a reaction chamber and an upper electrode assembly of the above embodiment, an upper electrode assembly disposed on a top of the chamber body, and a substrate support disposed in the reaction chamber A component for placing a substrate, the substrate being positioned opposite the target.
  • the upper electrode assembly sputters the target, and the sputtered material is deposited onto the substrate to form a uniform film on the substrate.
  • Another embodiment of the present disclosure also provides a physical vapor deposition apparatus including the above physical vapor deposition chamber, and a loading/unloading chamber and a transfer chamber. a loading/unloading chamber for loading a substrate, the transfer chamber being disposed between the physical vapor deposition chamber and the loading/loading chamber for transporting the substrate loading/unloading the chamber to the physical vapor deposition chamber room.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种用于物理气相沉积设备的馈入结构（100），包括用于接收功率的第一引入件（110）、耦接至第一引入件（110）的第二引入件（120）和用于向靶材均匀分配功率的多个分配件（130），分配件（130）一端耦接第二引入件（120），另一端用于向靶材（300）提供功率，第一引入件（110）和第二引入件（120）围绕靶材（300）的轴线（310）同轴设置。还公开了包括馈入结构（100）的上电极组件以及物理气相沉积腔室和设备。

Description

馈入结构、上电极组件以及物理气相沉积腔室和设备 技术领域
本公开涉及半导体制造技术领域，尤其涉及一种馈入结构、上电极组件以及物理气相沉积腔室和设备。
背景技术
随着半导体14/16纳米工艺的发展，TiN高密度膜开发已经成为TiN硬掩膜PVD设备研发的重点技术。为获得质量更好的TiN薄膜，需要在耙材上同时加载直流功率与甚高频射频功率，其中甚高频(Very high frequency，VHF)是指30MHz到300MHz的频带。靶材上的直流负压能够在磁场的辅助下，离化气体产生等离子体，并吸引正离子轰击靶材进行溅射沉积，甚高频射频功率的引入能够进一步促进气体离化率，有利于生成更加致密的薄膜。
发明内容
根据本公开的一个方面，提供了一种馈入结构，用于物理气相沉积设备，包括：
第一引入件，用于接收功率；
第二引入件，耦接至所述第一引入件；以及
多个分配件，所述多个分配件围绕所述第一引入件的轴线均匀分布，并且每个分配件的一端耦接到所述第二引入件，另一端用于向靶材提供所述功率。
在本公开的一些实施例中，所述第一引入件、所述第二引入件均与所述 靶材同轴设置。
在本公开的一些实施例中，所述第二引入件设置有关于其中心对称的多个孔。
在本公开的一些实施例中，所述多个孔在所述第二引入件上排列成多圈结构，各圈结构所包括的孔数量相同，并且，沿所述第二引入件中心至边缘的方向，所述孔的半径递增。
在本公开的一些实施例中，所述分配件的横截面呈圆形，且所述分配件的直径不小于10mm。
根据本公开的另一个方面，提供了一种上电极组件，包括：
如任一上述馈入结构；
还包括：射频电源和/或直流电源，耦接所述第一引入件。
在本公开的一些实施例中，还包括：
支撑座，一端支撑所述第二引入件，另一端用于固定所述靶材，所述多个分配件设置在所述支撑座内并用于耦接所述靶材；
磁控管轴承座，安装于所述支撑座，用于将沿第一轴线的外部驱动转换为沿第二轴线的输出驱动，所述第一轴线偏离所述第一引入件的轴线。
在本公开的一些实施例中，所述支撑座包括：
支撑壁，一端支撑所述第二引入件，另一端用于固定到靶材；
隔段层，横向设置在所述支撑壁内，以将所述支撑壁划分为朝向所述第二引入件的第一腔体以及朝向所述靶材的第二腔体；
所述磁控管轴承座设置于所述第一腔体内，包括：
输入轴，沿所述第一轴线接收所述外部驱动；
输出轴，穿过所述隔段层伸入所述第二腔体中，并沿所述第二轴线输出所述输出驱动，所述第二轴线与所述第一引入件的轴线重合；
所述上电极组件还包括：
磁控管装配体，位于所述第二腔体内，并安装在所述输出轴上。
在本公开的一些实施例中，还包括：
电机，位于所述第一腔体外；
所述磁控管轴承座的输入轴穿过所述第二引入件，并与所述电机的输出轴连接。
在本公开的一些实施例中，还包括：
电机，位于所述第一腔体内，且所述电机被屏蔽结构包覆；
所述磁控管轴承座的输入轴与所述电机的输出轴连接。
在本公开的一些实施例中，所述支撑座包括支撑壁和支撑盖；
所述支撑壁的一端与所述支撑盖连接，以形成第三腔体，另一端用于固定到靶材；
所述支撑盖用于支撑所述第二引入件；
所述磁控管轴承座设置于所述第三腔体，并被防水结构包覆，包括：
输入轴，沿所述第一轴线接收所述外部驱动；
输出轴，穿过所述隔段层伸入所述第三腔体内，并沿所述第二轴线输出所述输出驱动，所述第二轴线与所述第一引入件的轴线重合；
所述上电极组件还包括：
磁控管装配体，位于所述第三腔体内，并安装在所述输出轴上。
在本公开的一些实施例中，还包括：
电机，位于所述腔体外；
所述磁控管轴承座的输入轴依次穿过所述支撑盖和第二引入件，并与所述电机的输出轴连接。
在本公开的一些实施例中，还包括：
电机，位于所述第三腔体内，并被防水结构包覆；
所述磁控管轴承座的输入轴与所述电机的输出轴连接。
在本公开的一些实施例中，还包括：
屏蔽罩，置于所述支撑座的外围；
屏蔽板，设置于所述屏蔽罩顶端，通过绝缘垫块固定于所述第二引入件的顶面，所述第一引入件从其穿过。
根据本公开的另一个方面，还提供了一种物理气相沉积腔室，包括：
腔室本体，
上电极组件，设置于所述腔室本体顶部，所述上电极组件采用如任一上述上电极组件。
根据本公开的另一个方面，还提供了一种物理气相沉积设备，包括上述物理气相沉积腔室。
附图说明
通过以下参照附图对本公开实施例的描述，本公开的上述以及其他目的、特征和优点将更为清楚，在附图中：
图1是本公开实施例馈入结构的结构示意图。
图2是本公开实施例馈入结构的第二引入件的结构示意图。
图3是本公开实施例的上电极组件的简化示意图。
图4是本公开实施例的上电极组件的剖面结构图。
图5是本公开实施例上电极组件的馈入结构和支撑座的剖面结构图。
图6是根据本公开另一实施例的上电极组件的剖面结构图。
图7是根据本公开另一实施例的上电极组件的剖面结构图。
图8是根据本公开另一实施例的上电极组件的剖面结构图。
图9是根据本公开另一实施例的上电极组件的剖面结构图。
附图标记：
100：馈入结构
110：第一引入件；
120：第二引入件；
121：孔；
130：分配件；
140：引入环；
150：汇出环；
200：上电极组件；
210：支撑座；
211；支撑壁；
211a：第一腔体；
211b：第二腔体；
211c：第三腔体；
212：隔断层；
213：支撑盖；
220：磁控管轴承座；
230：磁控管装配体；
240：电机；
250：屏蔽罩；
260：屏蔽板；
261：开盖机构连接件；
262：绝缘垫块；
270：光电检测组件；
271：反射板；
272：光电传感器；
273：石英窗；
281：屏蔽结构；
282：防水结构；
290：磁感应式检测组件；
291：磁体；
292：磁性接近开关；
300：靶材；
310：轴线。
具体实施方式
以下将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
射频(Radio Frequency，RF)功率和/或直流(Direct Current，DC)功率一般通过馈入结构提供给靶材。当采用60MHz或40MHz甚高频射频电源及直流电源进行工艺时，电源的电压及电流的引入方式及其在靶材上分布的均匀性会直接影响溅射沉积所获得的薄膜的厚度均匀性。现有的物理气相沉积(Physical Vapor Deposition，PVD)设备的馈入结构，由于靶材轴线的位置一般会被上电极组件的磁控管轴承座所占据，导致电源功率的引入不得不偏置处理，电源功率只能从非靶材轴线位置输入，这样的设置方式往往会影响薄膜厚度均匀性。同时，馈入结构通常采用薄板状零件，该结构阻抗较大，容易导致功率的浪费。当采用较高频率的RF电源时，受功率引入的偏置处理以及阻抗的影响更为突出。
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例并参照相应附图，对本公开进一步详细说明。
图1是根据本公开一实施例的馈入结构的结构示意图，该馈入结构作为上电极组件的一个部件，用于将电源功率更为均匀地提供给靶材，以实现靶 材的均匀溅射。
如图1所示，本公开的馈入结构100包括第一引入件110、第二引入件120和多个分配件130。其中，第一引入件110可以呈杆状结构，第二引入件120可以呈板状结构。该第一引入件110的一端用于耦接电源(图中并未示出)，以接收电源所输出的功率(例如，直流功率或射频功率等)，另一端耦接第二引入件120。分配件130可以为金属螺杆，材料例如为铜，直径为10mm或更大，大截面的金属螺杆可以减小传输路径的阻抗，降低功率耗损，减小功率浪费。多个分配件130围绕第一引入件110的轴线均匀分布，并且每个分配件130的一端耦接第二引入件120，另一端用于耦接靶材300，以向靶材300提供功率。优选地：靶材300的轴线310与第一引入件110和第二引入件120的轴线重合，三者同轴设置。
本实施例馈入结构的第一引入件110沿第二引入件120的轴线耦接第二引入件120。进行工艺时，电源功率沿第一引入件110馈入第二引入件120的中心，并由第二引入件120的中心均匀分散至第二引入件120的边缘。多个分配件130围绕第一引入件110的轴线均匀分布，也就是围绕第二引入件120的轴线均匀分布，则电源功率由第二引入件120的边缘均匀分配给各个分配件130。优选的：各个分配件130同样也是围绕靶材300的轴线310均匀分布的，则分配件130将电源功率均匀馈入至靶材300。
如图1所示，馈入结构100包括6个分配件130，但该数量仅是示例性说明，在其他示例中，分配件130的数量可以根据需要进行设置，例如但不限于8个、12个、16个、24个等。
如图1所示，第二引入件120的轴线与第一引入件110和靶材300的轴线310也是重合的。但本公开实际上并不限于此，例如，第二引入件120与靶材300的形状、尺寸有可能并不一致，二者位置有可能并不完全正对。在这种情况下，第二引入件120的轴线与第一引入件110和靶材300的轴线310 可能并不重合，但第一引入件110的轴线仍与靶材300的轴线310保持重合，且多个分配件130围绕轴线310均匀分布，这样同样可以实现将电源功率均匀馈入至靶材300。
传统的馈入结构，当组装于上电极组件后，由于上电极组件的磁控管轴承座占据第二引入件和靶材的轴线位置，导致第一引入件的位置不得不偏置处理，这种“偏置馈入、磁控中心”的结构会影响溅射薄膜厚度的均匀性。而本实施例的馈入结构100，其第一引入件110中心馈入，分配件130围绕第一引入件110的轴线均匀分布，实现功率的均匀分配。优选的：靶材300的轴线310与第一引入件110的轴线相重合，可以将功率均匀馈入至靶材300。
图2是本公开实施例的第二引入件的结构示意图。如图2所示，第二引入件120设置有关于其中心对称的多个孔121。该多个孔121可以在第二引入件120上排列成多圈结构，各圈结构所包括的孔121的数量可以相同，也可以不同。并且，在沿第二引入件120中心至边缘的方向，孔121的半径递增。也就是说，如图2所示，在沿第二引入件120半径增大方向，各圈结构中的孔121的直径渐增。每一圈上的孔121沿着圆周方向均匀排列，各圈上的孔121沿着径向彼此对准。
第二引入件120的上述多个孔121构成的形状类似于“星系状”，第二引入件120可以称作“星系状”圆板。在图2中，第二引入件120的多个孔121排列成三圈结构，每圈结构包括六个孔121，但这仅是示例性说明，孔的圈数、每圈孔的个数、孔的大小可以根据需要进行设置。馈入结构100的外周一般会由屏蔽结构包覆，以消除电源功率对外部的影响。开有孔121的第二引入件120一方面可以减小第二引入件120与屏蔽结构之间的容抗，降低功率耗损，减小功率的浪费；另一方面，便于对第二引入件120的安装且造型美观。
本公开附图2仅是给出了一种第二引入件的示例，但本实施例并不限于此。本实施例对孔的形状和排列方式不做限定。实际上，只要第二引入件开有关于其中心对称的多个孔，即可达到减小容抗，降低功耗的效果。
本公开另一实施例提供了一种上电极组件200，图3是该实施例上电极组件200的简化示意图，图4是该上电极组件200的剖面结构图。
参见图3至图9，上电极组件200包括前述实施例的馈入结构100，用以实现对靶材300的均匀溅射。该上电极组件200还包括射频电源(图中并未示出)和/或直流电源(图中并未示出)，其耦接馈入结构100中的第一引入件110，用于向第一引入件110提供功率。
本实施例结构的上电极组件200包括前述实施例的馈入结构100，这样，在进行工艺时，射频电源和/或直流电源所提供的功率可以沿第一引入件110馈入第二引入件120的中心，并均匀地分配给各个分配件130，从而可以通过多个分配件130实现将功率均匀馈入至靶材300中。此外，本实施例结构的上电极组件200，不仅可以实现射频功率均匀馈入靶材300中，还可以实现直流功率均匀馈入至靶材300中。
如图3和图4所示，上电极组件200还包括支撑座210，该支撑座210可以采用绝缘材料制成。支撑座210的一端支撑第二引入件120，另一端用于固定靶材300。多个分配件130设置在该支撑座内并用于耦接靶材300。
上电极组件200还包括磁控管轴承座220，该磁控管轴承座220安装于支撑座210中，用于将沿第一轴线的外部驱动转换为沿第二轴线的输出驱动。其中，第一轴线偏离第一引入件110的轴线，第二轴线与第一引入件110的轴线重合。
具体地，如图3和图4所示，作为支撑座210的一种具体结构，支撑座210可以包括支撑壁211和隔断层212。支撑壁211的一端支撑第二引入件120，另一端用于固定到靶材300。隔断层212横向设置在支撑壁211内，以 将支撑壁211划分为朝向第二引入件120的第一腔体211a以及朝向靶材300的第二腔体211b。
其中，磁控管轴承座220设置于第一腔体211a内，例如，固定于隔断层212上。该磁控管轴承座220包括输入轴和输出轴。该输入轴沿第一轴线接收外部驱动。输出轴穿过隔断层212伸入第二腔体211b中，并沿第二轴线输出上述的输出驱动。
此外，如图4所示，上电极组件200还包括磁控管装配体230，该磁控管装配体230位于第二腔体211b内，并安装在磁控管轴承座220的输出轴上。
采用上述实施例馈入结构的上电极组件200，由于馈入结构100的第一引入件110占据了上电极组件200的中心位置，因此将磁控管轴承座220等结构的位置偏置以避免对馈入结构100产生影响。本实施例的支撑座210采用双层结构，磁控管轴承座220的输入轴和输出轴不同轴，输出轴仍位于靶材的轴线310，输入轴偏离靶材的轴线310，电机240通过磁控管轴承座220带动磁控管装配体230旋转。这种“中心馈入、磁控偏置”的结构即保证了电源功率在靶材300上分布的均匀性，也不影响磁控管轴承座220等结构的正常工作。
此外，如图4所示，馈入结构100除包括第一引入件110、第二引入件120和多个分配件130外，还可以包括引入环140和汇出环150。
具体地，如图4所示，第二引入件120通过引入环140固定于支撑座210的上端，与隔断层212、支撑座210的上段形成第一腔体211a。多个分配件130设置于支撑壁211内部，并且沿支撑壁211周向均匀分布，其上端通过引入环140耦接第二引入件120。汇出环150例如通过螺钉固定于支撑壁211的下端，并与分配件130下端耦接，靶材300例如通过螺钉与汇出环150固定，经汇出环150耦接分配件130，从而耦接至整个馈入结构100。沿第一 引入件110馈入第二引入件120的电源功率经引入环140、分配件130和汇出环150均匀馈入至靶材300。汇出环150与支撑壁211的下端之间、以及汇出环150与和靶材300之间例如通过密封圈密封，使第二腔体211b密封。
如图3和图4所示，上电极组件200还包括电机240。该电机240可以位于第一腔体211a外。磁控管轴承座220的输入轴穿过第二引入件120，并与电机240的输出轴连接。
此外，如图6所示，电机240也可以位于第一腔体211a内，例如，电机240可以固定于隔断层212上。磁控管轴承座220的输入轴与电机240的输出轴连接。另外，电机240被屏蔽结构281所包覆，这样，可以屏蔽射频功率和直流功率对电机240的干扰。在该实施例中，磁控管轴承座220和电机240均设置于第一腔体211a，可以减少外置部件的数量，减小上电极组件200的整体体积，节省空间。
如图7所示，作为支撑座210的第二种具体结构，该支撑座210包括支撑壁211和支撑盖213。支撑壁211的第一与支撑盖213连接，以形成第三腔体211c，另一端用于固定到靶材300。支撑盖213用于支撑第二引入件120。
在具有第二种结构的支撑座210中，如图7所示，磁控管轴承座220可以设置于第三腔体211c中，并被防水结构282包覆。磁控管轴承座220的输入轴沿第一轴线接收外部驱动，输出轴穿过隔断层212伸入第三腔体211c内，并沿第二轴线输出上述的输出驱动。磁控管装配体230也位于第三腔体211c内，并安装在磁控管轴承座220的输出轴上。在该实施例中，支撑座210采用单腔体(第三腔体211c)结构，支撑座210的体积可以一定程度缩小，从而减小上电极组件200的整体体积，结构更紧凑，节省空间。
同样地，在具有第二种结构的支撑座210中，电机240的设置方式也有两种。
第一种情况，如图8所示，电机240可以位于第三腔体211c内，此时， 该电机240也需要被防水结构282包覆。磁控管轴承座220的输入轴与电机240的输出轴连接。
第二种情况，如图9所示，电机240可以位于第三腔体211c外，磁控管轴承座220的输入轴依次穿过支撑盖213和第二引入件120，并与电机240的输出轴连接。磁控管轴承座220和电机240均设置于第三腔体211c中，可以减少外置部件的数量，进一步减小上电极组件200的整体体积，节省空间。
为了对上电极组件200进行电磁屏蔽，如图6至图9所示，上电极组件200还可以包括屏蔽罩250和屏蔽板260。屏蔽罩250可以置于支撑座210的外围。屏蔽板260例如通过螺钉固定于屏蔽罩250顶端，二者之间可以使用例如射频垫片(RF gasket)增强导电连接，以限定一屏蔽空间。同时，屏蔽板260可以通过绝缘垫块262固定于第二引入件120顶面，绝缘垫块262具有一定厚度，使得第二引入件120与屏蔽板260之间相距一定距离。由于第二引入件120开有多个孔121，因而减小了第二引入件120与屏蔽板260之间的容抗，降低了功率耗损，减小了功率的浪费。屏蔽板260顶面还对称安装有四个开盖机构连接件261，用于安装开盖支架。
在一个示例中，如图4所示，磁控管轴承座220的输入轴沿偏离靶材轴线的轴线与电机240的输出轴连接。在此，偏离靶材轴线的轴线是指沿靶材径向与靶材轴线310相距一段距离、与靶材轴线310平行的轴线。但本公开并不限于此，在其他示例中，偏离靶材轴线的轴线也可以是由靶材轴线延伸出的、与靶材轴线具有一定夹角的轴线。同时，由于屏蔽板通过绝缘垫块固定于第二引入件顶部，第二引入件与屏蔽板之间的距离较大，二者正对面积较小，因此可以降低直流功率或射频功率的耗损，减小功率的浪费。
再参照图4，本实施例的上电极组件200还包括光电检测组件270，用于检测磁控管装配体230的旋转状态。例如，光电检测组件270包括反射板271和光电传感器272。反射板271可以安装于磁控管装配体230朝向隔断 层212的表面，光电传感器272可以安装于屏蔽板402，与反射板271位置对应。在隔断层212和第二引入件120的对应位置开有透明石英窗273。反射板271、透明石英窗273、光电传感器272形成光电传感通路，检测磁控管装配体230的旋转状态。
如图9所示，本实施例的上电极组件200还包括磁感应式检测组件290，用以代替光电检测组件，用于检测磁控管装配体230旋转状态。例如，磁感应式检测组件290包括磁铁291和磁性接近开关292。磁铁291安装于磁控管装配体230的边缘，磁性接近开关292安装于支撑壁211外侧，当磁控管装配体230旋转时，磁铁291与磁性接近开关292之间的距离随磁铁291的旋转而发生周期改变，两者接近时磁性接近开关292发出信号，检测磁控管装配体230的旋转状态。
本公开另一实施例还提供了一种物理气相沉积腔室，包括反应腔室和上述实施例的上电极组件，上电极组件设置于所述腔室本体顶部，反应腔室内设有基片支撑部件，用于放置基片，基片与靶材位置相对。上电极组件对靶材进行溅射，溅射的材料沉积到基片，在基片上形成均匀薄膜。
本公开另一实施例还提供了一种物理气相沉积设备，包括上述物理气相沉积腔室，以及加载/载出腔室和传输腔室。加载/载出腔室用于加载基片，传输腔室设置于物理气相沉积腔室和加载/载出腔室之间，用于将加载/载出腔室的基片传输至物理气相沉积腔室。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。
还需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的保护 范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。
并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。另外，在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。
除非有所知名为相反之意，本说明书及所附权利要求中的数值参数是近似值，能够根据通过本公开的内容所得的所需特性改变。具体而言，所有使用于说明书及权利要求中表示组成的含量、反应条件等等的数字，应理解为在所有情况中是受到「约」的用语所修饰。一般情况下，其表达的含义是指包含由特定数量在一些实施例中±10％的变化、在一些实施例中±5％的变化、在一些实施例中±1％的变化、在一些实施例中±0.5％的变化。
再者，单词“包含”不排除存在未列在权利要求中的组件或步骤。位于组件之前的单词“一”或“一个”不排除存在多个这样的组件。
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等的用词，以修饰相应的组件，其本身并不意含及代表该组件有任何的序数，也不代表某一组件与另一组件的顺序、或是制造方法上的顺序，该些序数的使用仅用来使具有某命名的一组件得以和另一具有相同命名的组件能做出清楚区分。
类似地，应当理解，为了精简本公开并帮助理解各个公开方面中的一个或多个，在上面对本公开的示例性实施例的描述中，本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，公开方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利 要求本身都作为本公开的单独实施例。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

  1. 一种馈入结构，用于物理气相沉积设备，其中，包括：
    第一引入件，用于接收功率；
    第二引入件，耦接至所述第一引入件；以及
    多个分配件，所述多个分配件围绕所述第一引入件的轴线均匀分布，并且每个分配件的一端耦接到所述第二引入件，另一端用于向靶材提供所述功率。
  2. 如权利要求1所述的馈入结构，其中，所述第一引入件、所述第二引入件均与所述靶材同轴设置。
  3. 如权利要求1或2所述的馈入结构，其中，所述第二引入件设置有关于其中心对称的多个孔。
  4. 如权利要求3所述的馈入结构，其中，所述多个孔在所述第二引入件上排列成多圈结构，各圈结构所包括的孔数量相同，并且，沿所述第二引入件中心至边缘的方向，所述孔的半径递增。
  5. 如权利要求1或2所述的馈入结构，其中，所述分配件的横截面呈圆形，且所述分配件的直径不小于10mm。
  6. 一种上电极组件，其中，包括：
    如权利要求1至5任一项所述的馈入结构；
    还包括：
    射频电源和/或直流电源，耦接所述第一引入件。
  7. 如权利要求6所述的上电极组件，其中，还包括：
    支撑座，一端支撑所述第二引入件，另一端用于固定所述靶材，所述多个分配件设置在所述支撑座内并用于耦接所述靶材；
    磁控管轴承座，安装于所述支撑座，用于将沿第一轴线的外部驱动转换为沿第二轴线的输出驱动，所述第一轴线偏离所述第一引入件的轴线。
  8. 如权利要求7所述的上电极组件，其中，所述支撑座包括：
    支撑壁，一端支撑所述第二引入件，另一端用于固定到靶材；
    隔断层，横向设置在所述支撑壁内，以将所述支撑壁划分为朝向所述第二引入件的第一腔体以及朝向所述靶材的第二腔体；
    所述磁控管轴承座设置于所述第一腔体内，包括：
    输入轴，沿所述第一轴线接收所述外部驱动；
    输出轴，穿过所述隔段层伸入所述第二腔体中，并沿所述第二轴线输出所述输出驱动，所述第二轴线与所述第一引入件的轴线重合；
    所述上电极组件还包括：
    磁控管装配体，位于所述第二腔体内，并安装在所述输出轴上。
  9. 如权利要求8所述的上电极组件，其中，还包括：
    电机，位于所述第一腔体外；
    所述磁控管轴承座的输入轴穿过所述第二引入件，并与所述电机的输出轴连接。
  10. 如权利要求8所述的上电极组件，其中，还包括：
    电机，位于所述第一腔体内，且所述电机被屏蔽结构包覆；
    所述磁控管轴承座的输入轴与所述电机的输出轴连接。
  11. 如权利要求7所述的上电极组件，其中，所述支撑座包括支撑壁和 支撑盖；
    所述支撑壁的一端与所述支撑盖连接，以形成第三腔体，另一端用于固定到靶材；
    所述支撑盖用于支撑所述第二引入件；
    所述磁控管轴承座设置于所述第三腔体中，并被防水结构包覆，包括：
    输入轴，沿所述第一轴线接收所述外部驱动；
    输出轴，穿过所述隔段层伸入所述第三腔体内，并沿所述第二轴线输出所述输出驱动，所述第二轴线与所述第一引入件的轴线重合；
    所述上电极组件还包括：
    磁控管装配体，位于所述第三腔体内，并安装在所述输出轴上。
  12. 如权利要求11所述的上电极组件，其中，还包括：
    电机，位于所述腔体外；
    所述磁控管轴承座的输入轴依次穿过所述支撑盖和所述第二引入件，并与所述电机的输出轴连接。
  13. 如权利要求11所述的上电极组件，其中，还包括：
    电机，位于所述第三腔体内，并被防水结构包覆；
    所述磁控管轴承座的输入轴与所述电机的输出轴连接。
  14. 如权利要求7至13任一项所述的上电极组件，其中，还包括：
    屏蔽罩，置于所述支撑座的外围；
    屏蔽板，设置于所述屏蔽罩顶端，通过绝缘垫块固定于所述第二引入件的顶面，所述第一引入件从其穿过。
  15. 一种物理气相沉积腔室，其中，包括：
    腔室本体，
    上电极组件，设置于所述腔室本体顶部，所述上电极组件采用如权利要求6至14中任一项所述的上电极组件。
  16. 一种物理气相沉积设备，其中，包括权利要求15所述的物理气相沉积腔室。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023118965A1 (en) 2021-12-22 2023-06-29 Askar Sinchev Computing network architecture for encryption and decryption

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107090574B (zh) * 2017-06-29 2024-02-27 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备
CN111733391A (zh) * 2020-05-30 2020-10-02 长江存储科技有限责任公司 物理气相沉积装置
CN114959559B (zh) * 2022-05-27 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备及其上电极机构
CN117144309A (zh) * 2023-09-13 2023-12-01 哈尔滨工程大学 一种耐蚀性的压力传感器波纹膜片制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102918175A (zh) * 2010-04-28 2013-02-06 应用材料公司 具有旋转磁铁组件和中央馈送射频功率的物理气相沉积腔室
US20130256127A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Substrate processing system having symmetric rf distribution and return paths
CN105074873A (zh) * 2013-03-05 2015-11-18 应用材料公司 在半导体处理腔室中所使用的溅射源
CN107090574A (zh) * 2017-06-29 2017-08-25 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003147522A (ja) * 2001-11-13 2003-05-21 Seiko Epson Corp マグネトロンスパッタ装置
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
CN102747339A (zh) * 2011-04-22 2012-10-24 英属开曼群岛商精曜有限公司 等离子体辅助式化学气相沉积装置
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源
CN103849848B (zh) * 2012-11-28 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 物理气相沉积装置
US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
CN207072965U (zh) * 2017-06-29 2018-03-06 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102918175A (zh) * 2010-04-28 2013-02-06 应用材料公司 具有旋转磁铁组件和中央馈送射频功率的物理气相沉积腔室
US20130256127A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Substrate processing system having symmetric rf distribution and return paths
CN105074873A (zh) * 2013-03-05 2015-11-18 应用材料公司 在半导体处理腔室中所使用的溅射源
CN107090574A (zh) * 2017-06-29 2017-08-25 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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