WO2019000164A1 - 等离子体设备和等离子体处理方法 - Google Patents

等离子体设备和等离子体处理方法 Download PDF

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Publication number
WO2019000164A1
WO2019000164A1 PCT/CN2017/089989 CN2017089989W WO2019000164A1 WO 2019000164 A1 WO2019000164 A1 WO 2019000164A1 CN 2017089989 W CN2017089989 W CN 2017089989W WO 2019000164 A1 WO2019000164 A1 WO 2019000164A1
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electrode
plasma
chambers
anode layer
concentration
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English (en)
French (fr)
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叶江波
钱俊
肖禄
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to CN201780050105.XA priority Critical patent/CN109564987B/zh
Priority to PCT/CN2017/089989 priority patent/WO2019000164A1/zh
Publication of WO2019000164A1 publication Critical patent/WO2019000164A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • the present invention relates to the field of plasma processing technologies, and in particular, to a plasma device and a plasma processing method.
  • the multilayer film structure of an Organic Light-Emitting Diode includes an anode layer, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode layer.
  • the multilayer film structure of the OLED forms a stepped energy level state, so that the holes provided by the anode layer and the electrons provided by the cathode layer are more easily transported to the organic light-emitting layer, and the holes and electrons combine to emit photons.
  • an excessive potential difference between the anode layer and the hole injection layer may cause a Schindler barrier, making it difficult to inject holes.
  • the saturation of the oxygen atoms in the anode layer is generally increased by plasma treatment of the anode layer by the plasma device to achieve the purpose of improving the work function of the anode layer.
  • Current plasma devices are monolithic structures that have an integral effect on the anode layer and do not eliminate the difference in work function between regions of the anode layer.
  • Embodiments of the present invention provide a plasma apparatus and a plasma processing method.
  • a plasma apparatus is configured to perform plasma treatment on an anode layer of an OLED multilayer film structure, the plasma apparatus including a plurality of chambers disposed at intervals, and an air conduit connected to the plurality of chambers And a plurality of adjustment modules respectively correspondingly connected to the plurality of chambers, wherein the plurality of chambers are for processing gas entering from the air conduit to generate plasma and discharge the plasma, the plurality of The adjustment module is configured to separately adjust the concentration of the plasma generated by the plurality of chambers.
  • the air guiding tube forms a plurality of air guiding channels
  • each of the adjusting modules includes a valve disposed on a plurality of the air guiding channels, the valve being used to adjust access to the chamber
  • the flow rate of the gas is to adjust the concentration of the plasma generated by the chamber.
  • the airway tube includes a main road with an air inlet and a plurality of branches corresponding to the plurality of chambers, the chamber being connected to the The main road, a plurality of the valves are respectively disposed on a plurality of the branches.
  • each of the chambers includes a first electrode and a second electrode, the first electrode and the second electrode are disposed opposite each other, and each of the adjustment modules includes a voltage regulator, the voltage Regulator for adjustment A voltage of the first electrode and/or the second electrode to adjust a concentration of the plasma generated by the chamber.
  • each of the second electrodes is provided with a plurality of gas outlets that are evenly distributed.
  • each of the chambers further includes opposing two insulator sidewalls, two of the insulator sidewalls connecting the first electrode and the second electrode, and two adjacent ones The two first electrodes of the chamber are spaced apart, and two of the second electrodes of two adjacent chambers are spaced apart, and two adjacent chambers share an insulator sidewall.
  • the plurality of chambers are spaced apart by an insulator.
  • the first electrode and the second electrode are metal electrodes.
  • the anode layer is made of an indium tin oxide material.
  • a plasma processing method is used for plasma processing an anode layer of an OLED multilayer film structure, the plasma processing method comprising:
  • the plasma apparatus comprising a plurality of chambers disposed at intervals, an air conduit connected to the plurality of chambers, and a plurality of adjustment modules respectively correspondingly connected to the plurality of the chambers, and a plurality of The chamber is configured to process a gas entering from the air conduit to generate a plasma and discharge the plasma, and the plurality of adjustment modules are configured to separately adjust the plasma generated by the plurality of chambers Concentration; and
  • a plurality of the adjustment modules are controlled to adjust a concentration of the plasma generated by a plurality of the chambers according to a difference in work function between regions of the anode layer.
  • the air guiding tube forms a plurality of air guiding channels
  • each of the adjusting modules includes a valve disposed on a plurality of the air guiding channels.
  • each of the chambers includes a first electrode and a second electrode, the first electrode and the second electrode are disposed opposite each other, and each of the adjustment modules includes a voltage regulator,
  • the voltage of the first electrode and/or the second electrode is implemented.
  • the air guiding tube forms a plurality of air guiding channels
  • each of the adjusting modules includes a valve disposed on a plurality of the air guiding channels
  • each of the chambers including a first electrode and a first a second electrode, the first electrode and the second electrode are oppositely disposed
  • each of the adjustment modules includes a voltage regulator
  • Controlling, by the plurality of the adjustment modules, the concentration of the plasma generated by the plurality of chambers according to a difference in work function between regions of the anode layer is by controlling an open area of a plurality of the valves, and Controlling a plurality of voltage regulators applied to the voltage of the first electrode and/or the second electrode is implemented.
  • the concentration of the plasma generated by the plurality of chambers can be adjusted by the adjustment module, thereby eliminating the difference in the work function between the regions of the anode layer and ensuring the work of the anode layer.
  • the uniformity of the function can be adjusted by the adjustment module, thereby eliminating the difference in the work function between the regions of the anode layer and ensuring the work of the anode layer.
  • FIG. 1 is a schematic structural view of a plasma apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of an OLED multilayer film structure according to an embodiment of the present invention.
  • FIG. 3 is a schematic flow chart of a plasma processing method according to an embodiment of the present invention.
  • FIG. 4 is a schematic view showing an operation state of a plasma apparatus according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a plasma apparatus according to another embodiment of the present invention.
  • the plasma device 10 The plasma device 10, the chamber 12, the first electrode 122, the second electrode 124, the air outlet 1242, the insulator sidewall 126, the air duct 14, the air guiding passage 14a, the main road 142, the air inlet 1422, the branch 144, Adjustment module 16, valve 162, voltage regulator 164, OLED multilayer film structure 20, anode layer 21, hole injection layer 22, hole transport layer 23, organic light-emitting layer 24, electron transport layer 25, electron injection layer 26, Cathode layer 27.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Or implicitly indicate the number of technical features indicated. Thus, features defining “first” or “second” may include one or more of the described features either explicitly or implicitly. In the description of the embodiments of the present invention, the meaning of "a plurality" is two or more unless specifically defined otherwise.
  • installation In the description of the embodiments of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed connections, for example, or They are detachable or integrally connected; they can be mechanically connected, they can be electrically connected or can communicate with each other; they can be connected directly or indirectly through an intermediate medium, which can be internal or two components of two components. Interaction relationship.
  • an intermediate medium which can be internal or two components of two components.
  • the "on" or “below” of the second feature may include direct contact of the first and second features, and may also include the first sum, unless otherwise specifically defined and defined.
  • the second feature is not in direct contact but through additional features between them.
  • the first feature “above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature includes the first feature directly below and below the second feature, or merely the first feature level being less than the second feature.
  • a plasma apparatus 10 is used for plasma treatment of the anode layer 21 of the OLED multilayer film structure 20.
  • the plasma apparatus 10 includes a plurality of chambers 12 disposed at intervals, an air duct 14 connected to the plurality of chambers 12, and a plurality of adjustment modules 16 respectively connected to the plurality of chambers 12.
  • a plurality of chambers 12 are used to treat the gas entering from the air tube 14 to generate a plasma and discharge the plasma.
  • a plurality of conditioning modules 16 are used to separately adjust the concentration of plasma generated by the plurality of chambers 12.
  • a plasma processing method is used for plasma processing an anode layer 21 of an OLED multilayer film structure 20.
  • the plasma processing method includes:
  • Step S10 providing a plasma device 10 including a plurality of chambers 12 disposed at intervals, an air duct 14 connected to the plurality of chambers 12, and a plurality of adjustment modules respectively connected to the plurality of chambers 12 16, a plurality of chambers 12 for treating the gas entering from the air duct 14 to generate plasma and discharge the plasma, Adjustment modules 16 for respectively adjusting the concentration of plasma generated by the plurality of chambers 12;
  • Step S20 The plurality of adjustment modules 16 are controlled to adjust the concentration of the plasma generated by the plurality of chambers 12 according to the difference in work function between the respective regions of the anode layer 21.
  • the concentration of the plasma generated by the plurality of chambers 12 is adjusted by the adjustment module 16, thereby During the plasma treatment of the anode layer 21, the difference in work function between the respective regions of the anode layer 21 is eliminated, and the uniformity of the work function of the anode layer 21 is ensured.
  • the OLED multilayer film structure 20 includes, in order from bottom to top, an anode layer 21, a hole injection layer 22, a hole transport layer 23, an organic light-emitting layer 24, an electron transport layer 25, an electron injection layer 26, and a cathode layer. 27.
  • the multilayer structure of the OLED multilayer film structure 20 forms a stepped energy level state, so that the holes provided by the anode layer 21 and the electrons provided by the cathode layer 27 are more easily transported to the organic light-emitting layer 24, and the holes and electrons combine to emit photons. .
  • the plasma apparatus 10 and the plasma processing method of the embodiment of the present invention are used for plasma treatment of the anode layer 21 to increase the work function of the anode layer 21, thereby reducing the potential difference between the anode layer 21 and the hole injection layer 22. And adjusting the concentration of the plasma generated by the corresponding independent chambers 12 through the plurality of adjustment modules 16, so that the work between the regions of the anode layer 21 is eliminated on the basis of improving the work function of the anode layer 21 as a whole. The effect of the difference in the function.
  • controlling the plurality of adjustment modules 16 to adjust the concentration of the plasma generated by the plurality of chambers 12 according to the difference in the work function between the respective regions of the anode layer 21 includes: the work function in a certain region of the anode layer 21 is relatively larger than that in other regions When low, the corresponding adjustment module 16 is adjusted to increase the concentration of plasma generated by the chamber 12 acting on the region to enhance the plasma treatment effect such that the work function between the regions of the anode layer 21 remains uniform; When the work function of a region of layer 21 is higher relative to other regions, the corresponding conditioning module 16 adjusts to reduce the concentration of plasma generated by chamber 12 acting on the region to attenuate the plasma treatment effect such that anode layer 21 The work function between the various regions remains uniform.
  • the work function of the region A of the anode layer 21 is lower than that of the other regions B, and the corresponding chamber 12 is adjusted by the corresponding adjustment module 16 (from the top to the bottom of the second chamber 12)
  • the concentration of the generated plasma is enhanced to enhance the plasma treatment effect.
  • the work function of the entire region of the anode layer 21 is improved, and the work function of the region A is also the same as that of the other regions B, so that the work of the entire region of the anode layer 21 is performed.
  • the difference of the work function can be detected by a general surface work function tester, and the present invention
  • the plasma processing method of the embodiment does not limit the detection method of the difference in the work function.
  • the anode layer 21 of the OLED multilayer film structure 20 is plasma-treated by spraying a plasma generated by the plasma device 10 on the anode layer 21 to increase oxygen atoms in the anode layer 21.
  • the saturation thereby increasing the work function of the anode layer 21.
  • the plasma processing method further includes, after step S20, spraying plasma generated by the plurality of chambers 12 on respective regions of the anode layer 21 corresponding to the plurality of chambers 12, respectively.
  • the plasma treatment is an O2-Plasma treatment (oxygen plasma treatment).
  • the gas entering the chamber 12 from the air duct 14 may be air, and thus, the cost is low.
  • the gas entering the chamber 12 from the air guiding tube 14 may also be oxygen, or other mixed gas containing a higher concentration of oxygen.
  • the airway tube 14 defines a plurality of air guiding channels 14a.
  • Each adjustment module 16 includes a valve 162 disposed on a plurality of air guide passages 14a. Valve 162 is used to regulate the flow of gas into chamber 12 to regulate the concentration of plasma generated by chamber 12.
  • the airway tube 14 forms a plurality of air conduction channels 14a.
  • Each adjustment module 16 includes a valve 162 disposed on each of the air guide passages 14a. Step S20 can be achieved by controlling the open area of the plurality of valves 162.
  • step S20 controls the open areas of the plurality of valves 162 in accordance with the difference in work function between the respective regions of the anode layer 21 to adjust the concentration of plasma generated by the corresponding plurality of chambers 12.
  • the airway tube 14 includes a total path 142 with an air inlet 1422 and a plurality of branches 144 corresponding to the plurality of chambers 12.
  • the chamber 12 is connected to the main road 142 by a corresponding branch 144.
  • a plurality of valves 162 are disposed on the plurality of branches 144, respectively.
  • a plurality of branches 144 are connected to the main road 142. Gas enters from the intake port 1422 of the main path 142 and is split into the branches 144 to reach the respective chambers 12. Each branch 144 does not need to be provided with a separate air inlet 1422, which simplifies the structure of the air duct 14. Valves 162 are disposed on each of the branches 144 to regulate the flow of gas from each of the branches 144 to adjust the concentration of plasma generated by the respective chambers 12.
  • each chamber 12 includes a first electrode 122 and a second electrode 124 .
  • the first electrode 122 and the second electrode 124 are oppositely disposed.
  • the adjustment module 16 is a voltage regulator 164.
  • Each voltage regulator 164 corresponds to a chamber 12, and the voltage regulator 164 is used to adjust the first electricity of the corresponding chamber 12.
  • the voltage of the pole 122 and/or the second electrode 124 of the corresponding chamber 12 is adjusted to adjust the concentration of plasma generated by the corresponding chamber 12.
  • each chamber 12 includes a first electrode 122 and a second electrode 124.
  • the first electrode 122 and the second electrode 124 are oppositely disposed.
  • Each adjustment module 16 includes a voltage regulator 164. Step S20 can be implemented by controlling the voltages applied to the first electrode 122 and/or the second electrode 124 by the plurality of voltage regulators 164.
  • the voltage regulator 164 is connected to the power source through a power line.
  • the power source is used to supply power to the first electrode 122 and the second electrode 124 to form an alternating electric field between the first electrode 122 and the second electrode 124, and the gas is dissociated and ionized by the electric field to generate plasma.
  • the plasma is an ionized gaseous substance composed of positive and negative ions generated by ionization of atoms and atomic groups after partial electrons are deprived.
  • the voltage regulator 164 is coupled to the first electrode 122 of the corresponding chamber 12, and the second electrode 124 of the corresponding chamber 12 is coupled to ground.
  • the voltage regulator 164 is used to adjust the voltage of the first electrode 122 to adjust the concentration of plasma generated by the corresponding chamber 12.
  • the voltage regulator 164 is coupled to the second electrode 124 of the corresponding chamber 12, and the first electrode 122 of the corresponding chamber 12 is grounded.
  • the voltage regulator 164 is used to adjust the voltage of the second electrode 124 to adjust the concentration of plasma generated by the corresponding chamber 12.
  • the voltage regulator 164 connects the first electrode 122 of the corresponding chamber 12 and the second electrode 124 of the corresponding chamber 12.
  • the voltage regulator 164 is used to adjust the voltage of the first electrode 122 of the corresponding chamber 12 and the voltage of the second electrode 124 of the corresponding chamber 12, thereby adjusting the concentration of plasma generated by the chamber 12.
  • the voltage regulator 164 adjusts the voltage applied to the first electrode 122 and/or the second electrode 124 such that the intensity of the electric field is enhanced, the higher the concentration of plasma generated by the corresponding chamber 12, the stronger the plasma treatment effect;
  • the voltage regulator 164 adjusts the voltage applied to the first electrode 122 and/or the second electrode 124 such that the intensity of the electric field is weakened, the lower the concentration of plasma generated by the corresponding chamber 12, the weaker the plasma treatment effect.
  • step S20 controls the voltages applied to the first electrode 122 and/or the second electrode 124 by the plurality of voltage regulators 164 according to the difference in work function between the regions of the anode layer 21 to adjust the plurality of voltages, respectively.
  • the airway tube 14 forms a plurality of air conduction channels 14a.
  • Each adjustment module 16 includes a valve 162 disposed on each of the air guide passages 14a.
  • Each chamber 12 includes a first electrode 122 and a second electrode 124. The first electrode 122 and the second electrode 124 are oppositely disposed.
  • Each adjustment module 16 includes a voltage regulator 164. Step S20 can be achieved by controlling the open area of the plurality of valves 162 and controlling the voltage applied to the first electrode 122 and/or the second electrode 124 by the plurality of voltage regulators 164.
  • the conditioning module 16 can include both a valve 162 for regulating the flow of gas entering the chamber 12 and a voltage regulator 164 for regulating the first electrode 122 and/or the second electrode.
  • the voltage of 124 In the present embodiment, step S20 controls the open areas of the plurality of valves 162 according to the difference in work function between the regions of the anode layer 21, and controls the plurality of voltage regulators 164 to be applied to the first electrode 122 and/or the second.
  • the voltage of the electrode 124 is adjusted to adjust the concentration of plasma generated by the plurality of chambers 12.
  • each of the second electrodes 124 is provided with a plurality of evenly distributed air outlets 1242.
  • the plurality of air outlets 1242 are evenly distributed, so that the plasma discharged from each of the chambers 12 acts uniformly on the corresponding region on the anode layer 21, facilitating the same chamber 12 acting on the corresponding region on the anode layer 21.
  • the work function everywhere is kept even.
  • the air outlet 1242 is circular. In other examples, the air outlet 1242 can also be square, elliptical, triangular, and the like.
  • each chamber 12 also includes opposing two insulator sidewalls 126.
  • Two insulator sidewalls 126 are connected to the first electrode 122 and the second electrode 124, and the two first electrodes 122 of the adjacent two chambers 12 are spaced apart, and two of the two adjacent chambers 12 are The two electrodes 124 are spaced apart.
  • the adjacent two chambers 12 share a single insulator sidewall 126.
  • the insulator sidewalls 126 may be ceramic materials.
  • the ceramic material has good corrosion resistance to oxygen plasma and has good electrical insulation, can withstand the high voltage applied on the first electrode 122 and/or the second electrode 124, and can realize two adjacent chambers.
  • the plurality of chambers 12 are spaced apart by an insulator.
  • the insulator can be made of ceramic material and will not be described in detail here.
  • the first electrode 122 and the second electrode 124 are metal electrodes.
  • the first electrode 122 and the second electrode 124 may be made of a single metal, an alloy, a metal oxide, or the like.
  • the first electrode 122 and the second electrode 124 when they are a single metal, they may be Ni, Fe, Pb, Pt, Any of Hg, Ti, and the like.
  • the first electrode 122 and the second electrode 124 are alloys, they may be any of a Pt-Rh alloy, a Pt-Au alloy, and a Pt-Pd alloy.
  • the first electrode 122 and the second electrode 124 are metal oxides, they may be any of RuO 2 , MnO 2 , PbO 2 , and NIO.
  • the anode layer 21 is made of an indium tin oxide material. Since the indium tin oxide (ITO) material has good electrical conductivity and transparency, the anode layer 21 can block electron radiation, ultraviolet rays, and far infrared rays harmful to the human body.
  • ITO indium tin oxide
  • the number of chambers 12 and adjustment modules 16 of embodiments of the present invention may be determined based on actual conditions, such as It can be determined according to the size of, for example, a glass generation (for example, the anode layer 21). In the case where the sizes of the glasses are the same, the more the number of the chambers 12, the better the plasma treatment is achieved. Of course, technical difficulty and cost issues should also be considered when determining the number of chambers 12.
  • the plurality of chambers 12 are distributed in one row or column, and each of the chambers 12 corresponds to a row or a column of the anode layer 21. It should be noted that the plurality of chambers 12 may also be distributed in a matrix.
  • a "computer-readable medium” can be any apparatus that can contain, store, communicate, propagate, or transport a program for use in an instruction execution system, apparatus, or device, or in conjunction with the instruction execution system, apparatus, or device.
  • computer readable media include the following: electrical connections (control methods) having one or more wires, portable computer disk cartridges (magnetic devices), random access memory (RAM), Read only memory (ROM), erasable editable read only memory (EPROM or flash memory), fiber optic devices, and portable compact disk read only memory (CDROM).
  • the computer readable medium may even be a paper or other suitable medium on which the program can be printed, as it may be optically scanned, for example by paper or other medium, followed by editing, interpretation or, if appropriate, other suitable The method is processed to obtain the program electronically and then stored in computer memory.
  • portions of the embodiments of the invention may be implemented in hardware, software, firmware or a combination thereof.
  • multiple steps or methods may be stored in the memory and executed by appropriate instructions
  • the software or firmware executed by the system is implemented.
  • it can be implemented by any one or combination of the following techniques well known in the art: having logic gates for implementing logic functions on data signals. Discrete logic circuits, application specific integrated circuits with suitable combinational logic gates, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.
  • each functional unit in each embodiment of the present invention may be integrated into one processing module, or each unit may exist physically separately, or two or more units may be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or in the form of software functional modules.
  • the integrated modules, if implemented in the form of software functional modules and sold or used as stand-alone products, may also be stored in a computer readable storage medium.
  • the above mentioned storage medium may be a read only memory, a magnetic disk or an optical disk or the like.

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Abstract

一种等离子体设备(10)，用于对OLED多层膜结构(20)的阳极层(21)进行等离子体处理。等离子体设备(10)包括间隔设置的多个腔室(12)、与多个腔室(12)连接的导气管(14)、以及分别与多个腔室(12)对应连接的多个调节模块(16)。多个腔室(12)用于处理从导气管(14)进入的气体以产生等离子体并将等离子体排出。多个调节模块(16)用于分别调节多个腔室(12)产生的等离子体的浓度。一种等离子体处理方法。

Description

等离子体设备和等离子体处理方法 技术领域
本发明涉及等离子体处理技术领域，特别涉及一种等离子体设备和等离子体处理方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)的多层膜结构包括阳极层、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极层。OLED的多层膜结构形成阶梯式的能阶状态，使得阳极层提供的空穴和阴极层提供的电子更容易传输至有机发光层，空穴与电子结合后放出光子。然而，当空穴由阳极层注入空穴注入层时，阳极层与空穴注入层之间过大的位能差会产生萧基能障，使得空穴不易注入。为了降低位能差，一般通过等离子体设备对阳极层进行等离子体处理的方式来增加阳极层中的氧原子的饱和度，以达到提高阳极层的功函数的目的。目前的等离子体设备都是整体式的结构，对阳极层产生整体性的作用，无法消除阳极层的各区域之间的功函数的差异。
发明内容
本发明实施方式提供一种等离子体设备和等离子体处理方法。
本发明实施方式的等离子体设备，用于对OLED多层膜结构的阳极层进行等离子体处理，所述等离子体设备包括间隔设置的多个腔室、与多个所述腔室连接的导气管、以及分别与多个所述腔室对应连接的多个调节模块，多个所述腔室用于处理从所述导气管进入的气体以产生等离子体并将所述等离子体排出，多个所述调节模块用于分别调节多个所述腔室产生的所述等离子体的浓度。
在某些实施方式中，所述导气管形成多条导气通道，每个所述调节模块包括设置在多条所述导气通道上的阀门，所述阀门用于调节进入所述腔室的所述气体的流量以调节所述腔室产生的所述等离子体的浓度。
在某些实施方式中，所述导气管包括开设有进气口的总路及与多个所述腔室对应的多条支路，所述腔室通过对应的所述支路连接至所述总路，多个所述阀门分别设置在多条所述支路上。
在某些实施方式中，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，所述电压调节器用于调节 所述第一电极和/或所述第二电极的电压以调节所述腔室产生的所述等离子体的浓度。
在某些实施方式中，每个所述第二电极设置有均匀分布的多个出气口。
在某些实施方式中，每个所述腔室还包括相对的两个绝缘体侧壁，两个所述绝缘体侧壁连接所述第一电极及所述第二电极，并将相邻的两个所述腔室的两个所述第一电极间隔，及将相邻的两个所述腔室的两个所述第二电极间隔，相邻的两个所述腔室共用一个绝缘体侧壁。
在某些实施方式中，所述多个腔室通过绝缘体间隔设置。
在某些实施方式中，所述第一电极和所述第二电极为金属电极。
在某些实施方式中，所述阳极层采用铟锡氧化物材料。
本发明实施方式的等离子体处理方法，用于对OLED多层膜结构的阳极层进行等离子体处理，所述等离子体处理方法包括：
提供等离子体设备，所述等离子体设备包括间隔设置的多个腔室、与多个所述腔室连接的导气管、以及分别与多个所述腔室对应连接的多个调节模块，多个所述腔室用于处理从所述导气管进入的气体以产生等离子体并将所述等离子体排出，多个所述调节模块用于分别调节多个所述腔室产生的所述等离子体的浓度；及
根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度。
在某些实施方式中，所述导气管形成多条导气通道，每个所述调节模块包括设置在多条所述导气通道上的阀门，
根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度是通过控制多个所述阀门的开放面积来实现的。
在某些实施方式中，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，
根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度是通过控制多个所述电压调节器施加在所述第一电极和/或所述第二电极的电压来实现的。
在某些实施方式中，所述导气管形成多条导气通道，每个所述调节模块包括设置在多条所述导气通道上的阀门，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，
根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度是通过控制多个所述阀门的开放面积，和控制多个所述电压调节器施加在所述第一电极和/或所述第二电极的电压来实现的。
本发明实施方式的等离子体设备和等离子体处理方法，可通过调节模块调节多个腔室产生的等离子体的浓度，从而消除阳极层的各区域之间的功函数的差异，保证阳极层的功函数的均匀性。
本发明实施方式的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点可以从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本发明实施方式的等离子体设备的结构示意图；
图2是本发明实施方式的OLED多层膜结构的结构示意图；
图3是本发明实施方式的等离子体处理方法的流程示意图；
图4是本发明实施方式的等离子体设备的工作状态示意图；
图5是本发明另一实施方式的等离子体设备的结构示意图；
主要元件及符号说明：
等离子体设备10、腔室12、第一电极122、第二电极124、出气口1242、绝缘体侧壁126、导气管14、导气通道14a、总路142、进气口1422、支路144、调节模块16、阀门162、电压调节器164、OLED多层膜结构20、阳极层21、空穴注入层22、空穴传输层23、有机发光层24、电子传输层25、电子注入层26、阴极层27。
具体实施方式
下面详细描述本发明的实施方式，实施方式的示例在附图中示出，其中，相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的实施方式的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明的实施方式和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的实施方式的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性 或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的实施方式的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明的实施方式的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明的实施方式中的具体含义。
在本发明的实施方式中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的实施方式的不同结构。为了简化本发明的实施方式的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明的实施方式可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明的实施方式提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图1和图2，本发明实施方式的等离子体设备10用于对OLED多层膜结构20的阳极层21进行等离子体处理。等离子体设备10包括间隔设置的多个腔室12、与多个腔室12连接的导气管14、以及分别与多个腔室12对应连接的多个调节模块16。多个腔室12用于处理从导气管14进入的气体以产生等离子体并将等离子体排出。多个调节模块16用于分别调节多个腔室12产生的等离子体的浓度。
请参阅图图1-图3，本发明实施方式的等离子体处理方法用于对OLED多层膜结构20的阳极层21进行等离子体处理，等离子体处理方法包括：
步骤S10：提供等离子体设备10，等离子体设备10包括间隔设置的多个腔室12、与多个腔室12连接的导气管14、以及分别与多个腔室12对应连接的多个调节模块16，多个腔室12用于处理从导气管14进入的气体以产生等离子体并将等离子体排出，多 个调节模块16用于分别调节多个腔室12产生的等离子体的浓度；及
步骤S20：根据阳极层21的各区域之间的功函数的差异控制多个调节模块16调节多个腔室12产生的等离子体的浓度。
本发明实施方式的等离子体设备10和等离子体处理方法，能在阳极层21的各区域的功函数存在差异时，通过调节模块16调节多个腔室12产生的等离子体的浓度，从而在对阳极层21进行等离子体处理的过程中消除阳极层21的各区域之间的功函数的差异，保证阳极层21的功函数的均匀性。
请参阅图2，OLED多层膜结构20从下至上依次包括：阳极层21、空穴注入层22、空穴传输层23、有机发光层24、电子传输层25、电子注入层26和阴极层27。OLED多层膜结构20的多层结构形成阶梯式的能阶状态，使得阳极层21提供的空穴和阴极层27提供的电子更容易传输至有机发光层24，空穴与电子结合后放出光子。然而，当空穴由阳极层21注入空穴注入层22时，阳极层21与空穴注入层22之间过大的位能差会产生萧基能障，使得空穴不易注入。本发明实施方式的等离子体设备10和等离子体处理方法用于对阳极层21进行等离子体处理以提高阳极层21的功函数，从而降低阳极层21与空穴注入层22之间的位能差，并可通过多个调节模块16调节对应的各独立腔室12产生的等离子体的浓度，使得在提高阳极层21整体的功函数的基础上，达到消除阳极层21的各区域之间的功函数的差异的效果。
具体地，气体从导气管14进入各个腔室12，腔室12用于容纳气体并对气体进行等离子体处理以产生等离子体，并将等离子体排出以作用于阳极层21上的不同区域。根据阳极层21的各区域之间的功函数的差异控制多个调节模块16调节多个腔室12产生的等离子体的浓度包括：在阳极层21的某一区域的功函数相对于其他区域较低时，对应的调节模块16调节以增大作用于该区域的腔室12产生的等离子体的浓度以加强等离子体处理效果，使得阳极层21的各区域之间的功函数保持均匀；在阳极层21的某一区域的功函数相对于其他区域较高时，对应的调节模块16调节以降低作用于该区域的腔室12产生的等离子体的浓度以减弱等离子体处理效果，使得阳极层21的各区域之间的功函数保持均匀。例如，以图4为例，阳极层21的区域A的功函数相对于其他区域B较低，则通过对应的调节模块16来调节对应的腔室12(从上至下第二个腔室12)所产生的等离子体的浓度(具体为增大该对应的腔室12所产生的等离子体的浓度)以加强等离子体处理效果。在对阳极层21进行等离子体处理后，阳极层21的整个区域的功函数都得到了提高，区域A的功函数也与其他区域B的功函数相同，从而使得阳极层21的整个区域的功函数分布均匀的效果。
可以理解，功函数的差异通过一般的表面功函数测试仪即可检测得到，本发明实 施方式的等离子体处理方法不限制功函数的差异的检测方法。
在本发明实施方式中，对OLED多层膜结构20的阳极层21进行等离子体处理为：将等离子体设备10产生的等离子体喷洒在阳极层21上，以增加阳极层21中的氧原子的饱和度，从而提高阳极层21的功函数。
在某些实施方式中，等离子体处理方法在步骤S20后还包括：将多个腔室12产生的等离子体喷洒在阳极层21上分别与多个腔室12对应的各区域。
在一个例子中，等离子体处理为O2-Plasma处理(氧等离子体处理)。从导气管14进入腔室12的气体可以为空气，如此，成本较低。当然，为了提高氧等离子体处理的效率等，从导气管14进入腔室12的气体也可以为氧气，或其他包含更高浓度的氧气的混合气体。
请再次参阅图1，在某些实施方式中，导气管14形成多条导气通道14a。每个调节模块16包括设置在多条导气通道14a上的阀门162。阀门162用于调节进入腔室12的气体的流量以调节腔室12产生的等离子体的浓度。
在某些实施方式中，导气管14形成多条导气通道14a。每个调节模块16包括设置在每条导气通道14a上的阀门162。步骤S20可通过控制多个阀门162的开放面积来实现。
可以理解，当阀门162的开放面积越大，由导气通道14a进入对应的腔室12的气体的流量越大，腔室12产生的等离子体的浓度越高，等离子体处理效果越强；当阀门162的开放面积越小，由导气通道14a进入对应的腔室12的气体的流量越小，腔室12产生的等离子体的浓度越低，等离子体处理效果越弱。在本实施方式中，步骤S20根据阳极层21的各区域之间的功函数的差异控制多个阀门162的开放面积，以调节对应的多个腔室12产生的等离子体的浓度。
在某些实施方式中，导气管14包括开设有进气口1422的总路142及与多个腔室12对应的多条支路144。腔室12通过对应的支路144连接至总路142。多个阀门162分别设置在多条支路144上。
具体地，多条支路144与总路142连接。气体从总路142的进气口1422进入，再经过分流进入各支路144以到达各个腔室12。各支路144无需设置单独的进气口1422，简化了导气管14的结构。各阀门162设置在各支路144上，以调节各支路144的气体的流量，从而调节对应的各个腔室12产生的等离子体的浓度。
请参阅图1和图5，在某些实施方式中，每个腔室12包括第一电极122和第二电极124。第一电极122和第二电极124相对设置。调节模块16为电压调节器164。每个电压调节器164对应一个腔室12，电压调节器164用于调节对应的腔室12的第一电 极122和/或对应的腔室12的第二电极124的电压以调节对应的腔室12产生的等离子体的浓度。
在某些实施方式中，每个腔室12包括第一电极122和第二电极124。第一电极122和第二电极124相对设置。每个调节模块16包括电压调节器164。步骤S20可通过控制多个电压调节器164施加在第一电极122和/或第二电极124的电压来实现。
具体地，电压调节器164通过电源线连接至电源。电源用于为第一电极122和第二电极124提供电力供应，以使第一电极122和第二电极124之间形成交变电场，气体在电场的作用下放电离解、电离而生成等离子体。可以理解，等离子体是由部分电子被剥夺后的原子及原子团被电离后产生的正负离子组成的离子化气体状物质。
在一个实施方式中，电压调节器164连接对应的腔室12的第一电极122，对应的腔室12的第二电极124接地。电压调节器164用于调节第一电极122的电压，从而调节对应的腔室12产生的等离子体的浓度。
在一个实施方式中，电压调节器164连接对应的腔室12的第二电极124，对应的腔室12的第一电极122接地。电压调节器164用于调节第二电极124的电压，从而调节对应的腔室12产生的等离子体的浓度。
在一个实施方式中，电压调节器164连接对应的腔室12的第一电极122和对应的腔室12的第二电极124。电压调节器164用于调节对应的腔室12的第一电极122的电压和对应的腔室12的第二电极124的电压，从而调节腔室12产生的等离子体的浓度。
当电压调节器164调节施加在第一电极122和/或第二电极124的电压以使得电场的强度增强时，对应的腔室12产生的等离子体的浓度越高，等离子体处理效果越强；当电压调节器164调节施加在第一电极122和/或第二电极124的电压以使得电场的强度减弱时，对应的腔室12产生的等离子体的浓度越低，等离子体处理效果越弱。
在本实施方式中，步骤S20根据阳极层21的各区域之间的功函数的差异控制多个电压调节器164施加在第一电极122和/或第二电极124的电压，以分别调节多个腔室12产生的等离子体的浓度。
在某些实施方式中，导气管14形成多条导气通道14a。每个调节模块16包括设置在每条导气通道14a上的阀门162。每个腔室12包括第一电极122和第二电极124。第一电极122和第二电极124相对设置。每个调节模块16包括电压调节器164。步骤S20可通过控制多个阀门162的开放面积，和控制多个电压调节器164施加在第一电极122和/或第二电极124的电压来实现。
具体地，调节模块16可以同时包括阀门162和电压调节器164，阀门162用于调节进入腔室12的气体的流量，电压调节器164用于调节第一电极122和/或第二电极 124的电压。在本实施方式中，步骤S20根据阳极层21的各区域之间的功函数的差异控制多个阀门162的开放面积，和控制多个电压调节器164施加在第一电极122和/或第二电极124的电压，以调节多个腔室12产生的等离子体的浓度。
请参阅图1，在某些实施方式中，每个第二电极124设置有均匀分布的多个出气口1242。
具体地，多个出气口1242均匀分布，使得每个腔室12排出的等离子体均匀的作用于阳极层21上的对应区域，有利于同一个腔室12作用在阳极层21上的对应区域的各处的功函数保持均匀。
在一个例子中，出气口1242为圆孔状。在其他例子中，出气口1242还可为方孔、椭圆形孔、三角形孔等等各种形状。
在某些实施方式中，每个腔室12还包括相对的两个绝缘体侧壁126。两个绝缘体侧壁126连接第一电极122及第二电极124，并将相邻的两个腔室12的两个第一电极122间隔，及将相邻的两个腔室12的两个第二电极124间隔。相邻的两个腔室12共用一个绝缘体侧壁126。
具体地，绝缘体侧壁126可以采用陶瓷材料。陶瓷材料对氧等离子体具有较好的耐腐蚀性，且具有良好的电绝缘性，能够承受第一电极122和/或第二电极124上施加的高压，并能实现将相邻的两个腔室12的第一电极122和第二电极124的电隔离和相邻的两个腔室12之间的气体隔离。
另外，相邻的两个腔室12共用一个绝缘体侧壁126有利于减小成本和减小占用体积。
在某些实施方式中，多个腔室12通过绝缘体间隔设置。同理，绝缘体可以采用陶瓷材料，在此不再详细说明。
在某些实施方式中，第一电极122和第二电极124为金属电极。
具体地，第一电极122和第二电极124可以采用单一金属、合金或金属氧化物等，例如，第一电极122和第二电极124为单一金属时，可以为Ni、Fe、Pb、Pt、Hg、及Ti等中的任意一种。第一电极122和第二电极124为合金时，可以为Pt-Rh合金、Pt-Au合金、及Pt-Pd合金等中的任意一种。第一电极122和第二电极124为金属氧化物时，可以为RuO2、MnO2、PbO2、及NIO等中的任意一种。
在某些实施方式中，阳极层21采用铟锡氧化物材料。由于铟锡氧化物(ITO)材料具有很好的导电性和透明性，阳极层21可以阻断对人体有害的电子辐射、紫外线及远红外线。
本发明实施方式的腔室12和调节模块16的个数可以根据实际情况来确定，例如 可以根据如玻璃世代(例如，阳极层21)的尺寸来确定。在玻璃的尺寸相同的情况下，腔室12的个数越多，等离子体处理达到的效果越好。当然，在确定腔室12的个数时，也应该考虑到技术难度和成本问题。
本发明实施方式的等离子体设备10的示例中，多个腔室12呈一行或一列分布，每个腔室12对应阳极层21的一行或一列的区域。需要指出的是，多个腔室12也可以呈矩阵分布。
在本说明书的描述中，参考术语“一个实施方式”、“一些实施方式”、“示意性实施方式”、“示例”、“具体示例”或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
流程图中或在此以其他方式描述的任何过程或方法描述可以被理解为，表示包括一个或更多个用于实现特定逻辑功能或过程的步骤的可执行指令的代码的模块、片段或部分，并且本发明的优选实施方式的范围包括另外的实现，其中可以不按所示出或讨论的顺序，包括根据所涉及的功能按基本同时的方式或按相反的顺序，来执行功能，这应被本发明的实施例所属技术领域的技术人员所理解。
在流程图中表示或在此以其他方式描述的逻辑和/或步骤，例如，可以被认为是用于实现逻辑功能的可执行指令的定序列表，可以具体实现在任何计算机可读介质中，以供指令执行系统、装置或设备(如基于计算机的系统、包括处理模块的系统或其他可以从指令执行系统、装置或设备取指令并执行指令的系统)使用，或结合这些指令执行系统、装置或设备而使用。就本说明书而言，"计算机可读介质"可以是任何可以包含、存储、通信、传播或传输程序以供指令执行系统、装置或设备或结合这些指令执行系统、装置或设备而使用的装置。计算机可读介质的更具体的示例(非穷尽性列表)包括以下：具有一个或多个布线的电连接部(控制方法)，便携式计算机盘盒(磁装置)，随机存取存储器(RAM)，只读存储器(ROM)，可擦除可编辑只读存储器(EPROM或闪速存储器)，光纤装置，以及便携式光盘只读存储器(CDROM)。另外，计算机可读介质甚至可以是可在其上打印所述程序的纸或其他合适的介质，因为可以例如通过对纸或其他介质进行光学扫描，接着进行编辑、解译或必要时以其他合适方式进行处理来以电子方式获得所述程序，然后将其存储在计算机存储器中。
应当理解，本发明的实施方式的各部分可以用硬件、软件、固件或它们的组合来实现。在上述实施方式中，多个步骤或方法可以用存储在存储器中且由合适的指令执 行系统执行的软件或固件来实现。例如，如果用硬件来实现，和在另一实施方式中一样，可用本领域公知的下列技术中的任一项或他们的组合来实现：具有用于对数据信号实现逻辑功能的逻辑门电路的离散逻辑电路，具有合适的组合逻辑门电路的专用集成电路，可编程门阵列(PGA)，现场可编程门阵列(FPGA)等。
本技术领域的普通技术人员可以理解实现上述实施例方法携带的全部或部分步骤是可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，该程序在执行时，包括方法实施例的步骤之一或其组合。
此外，在本发明的各个实施例中的各功能单元可以集成在一个处理模块中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个模块中。上述集成的模块既可以采用硬件的形式实现，也可以采用软件功能模块的形式实现。所述集成的模块如果以软件功能模块的形式实现并作为独立的产品销售或使用时，也可以存储在一个计算机可读取存储介质中。
上述提到的存储介质可以是只读存储器，磁盘或光盘等。
尽管上面已经示出和描述了本发明的实施方式，可以理解的是，上述实施方式是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施实施进行变化、修改、替换和变型。

Claims (13)

  1. 一种等离子体设备，用于对OLED多层膜结构的阳极层进行等离子体处理，其特征在于，所述等离子体设备包括间隔设置的多个腔室、与多个所述腔室连接的导气管、以及分别与多个所述腔室对应连接的多个调节模块，多个所述腔室用于处理从所述导气管进入的气体以产生等离子体并将所述等离子体排出，多个所述调节模块用于分别调节多个所述腔室产生的所述等离子体的浓度。
  2. 根据权利要求1所述的等离子体设备，其特征在于，所述导气管形成多条导气通道，每个所述调节模块包括设置在每条所述导气通道上的阀门，所述阀门用于调节进入所述腔室的所述气体的流量以调节所述腔室产生的所述等离子体的浓度。
  3. 根据权利要求2所述的等离子体设备，其特征在于，所述导气管包括开设有进气口的总路及与多个所述腔室对应的多条支路，所述腔室通过对应的所述支路连接至所述总路，多个所述阀门分别设置在多条所述支路上。
  4. 根据权利要求1-3任意一项所述的等离子体设备，其特征在于，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，所述电压调节器用于调节所述第一电极和/或所述第二电极的电压以调节所述腔室产生的所述等离子体的浓度。
  5. 根据权利要求4所述的等离子体设备，其特征在于，每个所述第二电极设置有均匀分布的多个出气口。
  6. 根据权利要求4所述的等离子体设备，其特征在于，每个所述腔室还包括相对的两个绝缘体侧壁，两个所述绝缘体侧壁连接所述第一电极及所述第二电极，并将相邻的两个所述腔室的两个所述第一电极间隔，及将相邻的两个所述腔室的两个所述第二电极间隔，相邻的两个所述腔室共用一个绝缘体侧壁。
  7. 根据权利要求1所述的等离子体设备，其特征在于，所述多个腔室通过绝缘体间隔设置。
  8. 根据权利要求4所述的等离子体设备，其特征在于，所述第一电极和所述第二电极为金属电极。
  9. 根据权利要求1所述的等离子体设备，其特征在于，所述阳极层采用铟锡氧化物材料。
  10. 一种等离子体处理方法，用于对OLED多层膜结构的阳极层进行等离子体处理，其特征在于，所述等离子体处理方法包括：
    提供等离子体设备，所述等离子体设备包括间隔设置的多个腔室、与多个所述腔室连接的导气管、以及分别与多个所述腔室对应连接的多个调节模块，多个所述腔室用于处理从所述导气管进入的气体以产生等离子体并将所述等离子体排出，多个所述调节模块用于分别调节多个所述腔室产生的所述等离子体的浓度；及
    根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度。
  11. 根据权利要求10所述的等离子体处理方法，其特征在于，所述导气管形成多条导气通道，每个所述调节模块包括设置在多条所述导气通道上的阀门，
    根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度是通过控制多个所述阀门的开放面积来实现的。
  12. 根据权利要求10所述的等离子体处理方法，其特征在于，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，
    根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所述腔室产生的所述等离子体的浓度是通过控制多个所述电压调节器施加在所述第一电极和/或所述第二电极的电压来实现的。
  13. 根据权利要求10所述的等离子体处理方法，其特征在于，所述导气管形成多条导气通道，每个所述调节模块包括设置在每条所述导气通道上的阀门，每个所述腔室包括第一电极和第二电极，所述第一电极和所述第二电极相对设置，每个所述调节模块包括电压调节器，
    根据所述阳极层的各区域之间的功函数的差异控制多个所述调节模块调节多个所 述腔室产生的所述等离子体的浓度是通过控制多个所述阀门的开放面积，和控制多个所述电压调节器施加在所述第一电极和/或所述第二电极的电压来实现的。
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