WO2018214593A1

WO2018214593A1 - Wavelength conversion device

Info

Publication number: WO2018214593A1
Application number: PCT/CN2018/074750
Authority: WO
Inventors: 陈雨叁; 李乾; 许颜正
Original assignee: 深圳市光峰光电技术有限公司
Priority date: 2017-05-24
Filing date: 2018-01-31
Publication date: 2018-11-29
Also published as: CN207350253U

Abstract

A wavelength conversion device, comprising: an incident layer (101), a fluorescent layer (102), and an emergent layer (103). The incident layer (101) is disposed at the side of the fluorescent layer (102) distant from the emergent layer (103), and comprises an incident film guiding incident light into the wavelength conversion device; the fluorescent layer (102) comprises a wavelength conversion material; the emergent layer (103) is disposed on the fluorescent layer (102), and comprises an light filtering unit array consisting of a plurality of light filtering units of which the borders are closely connected to each other; when the wavelength conversion material in the fluorescent layer (102) is illuminated by the incident light entering through the incident layer (101), the wavelength conversion material is excited to emit light of different wavelengths, and mixed light formed by mixing the emitted light and the incident light exits from the wavelength conversion device through the light filtering unit array. The wavelength conversion device achieves high light exit efficiency per unit area, and good uniformity of the color and luminance of the emergent light.

Description

Wavelength conversion device

Technical field

The utility model relates to the technical field of display and illumination, in particular to a wavelength conversion device.

Background technique

In the related art solution, in most array wavelength conversion light-emitting devices, a reflective grating needs to be added between two light-emitting units to solve the crosstalk problem of the intermediate light of the light-emitting unit. Moreover, in order to obtain monochromatic light of different wavelengths, it is necessary to fill different reflective materials in the reflective grid. This technical solution is complicated in the manufacturing process and is difficult to implement. Moreover, in the case where the width of the grid is large, the area occupied by the grid occupies a large proportion in a unit area, so that the light-emitting area per unit area is reduced, which reduces the light-emitting efficiency per unit area; In the case, the precision of the processing is high, which is difficult to achieve in the related art. Therefore, in the case of the same area size, how to increase the proportion of the light-emitting area per unit area and increase the light-emitting efficiency are urgent problems to be solved.

technical problem

In view of this, the technical problem to be solved by the present invention is how to increase the proportion of the light-emitting area per unit area and increase the light-emitting efficiency.

Technical solution

solution

In order to solve the above technical problem, according to an embodiment of the present invention, a wavelength conversion device is provided, including: an incident layer, a fluorescent layer, and an exit layer, wherein the incident layer is disposed on the fluorescent layer away from the exit layer a side of the incident layer comprising an incident film for directing incident light into the wavelength conversion device; the phosphor layer comprising a wavelength converting material for converting at least a portion of the incident light into emitted light of a different wavelength; The emission layer is disposed on the fluorescent layer, and comprises an array of filter units composed of a plurality of filter units closely connected to each other;

Wherein, in the case where the incident light entering through the incident layer is irradiated onto the wavelength conversion material in the fluorescent layer, the wavelength converting material is excited to emit emitted light of different wavelengths, the emitted light and The mixed light formed by the mixing of the incident light is emitted from the wavelength conversion device via the filter unit array.

In a possible implementation, the incident layer is in close contact with the fluorescent layer.

In a possible implementation, the method further includes a dielectric layer covering a region of the surface of the phosphor layer that is not in contact with the incident layer and the exit layer, the dielectric layer for reflecting the Light and/or the incident light is emitted.

In a possible implementation, the method further includes a dielectric layer disposed on a side of the fluorescent layer away from the exit layer, the dielectric layer being located between the incident layer and the fluorescent layer The dielectric layer is configured to reflect the emitted light and/or the incident light.

In a possible implementation, the method further includes a dielectric layer disposed on a side of the fluorescent layer away from the exit layer, the dielectric layer includes a through hole, and the incident layer is disposed in the The through hole, the dielectric layer is for reflecting the emitted light and/or the incident light.

In a possible implementation manner, the dielectric layer includes at least one of an air gap, a reflective film, and a first transparent substrate coated with a reflective film, wherein the reflective film reflects the emitted light and/or The incident light is described.

In a possible implementation, the method further includes: a heat dissipation frame, encapsulating the incident layer, the fluorescent layer, and the exit layer, or encapsulating the dielectric layer to enable the incident light to pass from the incident layer Enter, from the exit layer.

In a possible implementation manner, in a case where the reflective film is plated on a side of the first transparent substrate away from the fluorescent layer, the thickness of the first transparent substrate is less than or equal to 0.35 mm; or In the case where the reflective film is plated on the first transparent substrate near the side of the fluorescent layer, the thickness of the first transparent substrate is less than or equal to 5 mm.

In a possible implementation manner, the reflective film is a metal reflective film, and the metal reflective film has a thickness of 500 nm to 2000 nm.

In a possible implementation manner, the reflective film is a dielectric reflective film, and an air gap exists between the dielectric reflective film and an interface of an adjacent layer.

In a possible implementation manner, the incident film transmits the incident light whose incident angle is less than or equal to a predetermined angle threshold, and reflects the incident light whose incident angle is greater than the predetermined angle threshold, and the predetermined angle threshold is 7 °.

In a possible implementation manner, the filter unit includes at least two of a red filter unit, a blue filter unit, a green filter unit, and a yellow filter unit, and the filters that closely form a boundary are closely connected. Each of the filter units of the cell array is periodically arranged.

In a possible implementation manner, the filter unit is a filter film, and the filter film is plated on the phosphor layer.

In a possible implementation manner, the exit layer further includes a second transparent substrate, the filter unit is disposed on the second transparent substrate, and the second transparent substrate has a thickness less than or equal to 0.35 mm, and the filtering The unit is a filter film, and the filter film is plated on the second transparent substrate.

In a possible implementation manner, the material of the heat dissipation frame includes at least one of sapphire, aluminum nitride, silicon, aluminum oxide, aluminum metal, and copper, and the heat dissipation frame has a thickness of 0.3 mm to 2 mm.

In a possible implementation manner, the wavelength converting material comprises at least one of a phosphor, a quantum dot and a fluorescent dye, and the fluorescent layer has a thickness of 0.3 mm to 0.5 mm.

Beneficial effect

According to the wavelength conversion device provided by the present invention, incident light entering through the incident layer is irradiated onto the wavelength conversion material in the fluorescent layer, and the wavelength conversion material is excited to emit emitted light of different wavelengths, and the emitted light and the incident light are mixed through the filter. The cell array is emitted, the light-emitting efficiency per unit area is high, the uniformity of the color and brightness of the emitted light is good, and the processing technology of the device is simple.

Further features and aspects of the present invention will become apparent from the following detailed description of exemplary embodiments.

DRAWINGS

The accompanying drawings, which are incorporated in FIG

1 shows a cross-sectional view of a wavelength conversion device in accordance with an embodiment of the present invention;

2 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

FIG. 3 illustrates a rear view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention; FIG.

4 shows a front view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

FIG. 5 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention; FIG.

6 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

FIG. 7 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

FIG. 8 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

9 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

Figure 10 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

11 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

12 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

Figure 13 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

Figure 14 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

Figure 15 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention;

16 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention.

Embodiments of the invention

Various exemplary embodiments, features, and aspects of the invention are described in detail below with reference to the drawings. The same reference numerals in the drawings denote the same or similar elements. Although the various aspects of the embodiments are illustrated in the drawings, the drawings are not necessarily drawn to scale unless otherwise indicated.

The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustrative." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or preferred.

In addition, numerous specific details are set forth in the Detailed Description of the <RTIgt; Those skilled in the art will appreciate that the present invention may be practiced without some specific details. In some instances, methods, means, components, and circuits that are well known to those skilled in the art are not described in detail in order to facilitate the invention.

Example 1

1 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention. As shown in FIG. 1, the wavelength conversion device may include an incident layer 101, a fluorescent layer 102, and an exit layer 103.

The incident layer 101 is disposed on a side of the phosphor layer 102 remote from the exit layer 103, and the incident layer 101 includes an incident film for guiding incident light into the wavelength conversion device; the phosphor layer 102 includes a wavelength converting material for converting the incident light into a different one. The emitted light of the wavelength; the exit layer 103 is disposed on the fluorescent layer 102, and includes an array of filter units composed of a plurality of filter units closely connected to each other.

Wherein, in the case where incident light entering through the incident layer 101 is irradiated onto the wavelength conversion material in the fluorescent layer 102, the wavelength converting material is excited to emit emitted light of different wavelengths, and the mixed light formed by mixing the emitted light and the incident light is via The filter unit array is emitted from the wavelength conversion device.

As an example of the present embodiment, the incident light may be blue light or ultraviolet light. For example, it may be blue light having a wavelength ranging from 445 nm to 465 nm.

In one possible implementation, FIG. 2 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention. As shown in FIG. 2, the apparatus may further include a heat dissipation frame 104 for encapsulating the incident layer 101, the phosphor layer 102, and the emission layer 103 to enable incident light to enter from the incident layer 101 and be emitted from the exit layer 103.

It should be noted that the heat dissipation frame 104 may have a plurality of ways of encapsulating the incident layer 101, the fluorescent layer 102, and the exit layer 103. For example, when the shape and the area of the incident layer 101, the fluorescent layer 102, and the exit layer 103 are the same, the heat dissipation frame 104 may only encapsulate the sides of the incident layer 101, the fluorescent layer 102, and the exit layer 103, or may be combined with the incident layer 101. A part of the incident surface is encapsulated together with a part of the exit surface of the exit layer 103.

When the shape of the incident layer 101 and the exit layer 103 is the same as that of the fluorescent layer 102, and the area is smaller than the area of the fluorescent layer 102, the heat-dissipating frame 104 can encapsulate the side of the incident layer 101, the fluorescent layer 102, the exit layer 103, and the fluorescent layer. 102 is not covered by the incident layer 101, the fluorescent layer 102 orthographic projection area;

Of course, there are other cases, such as the shape and area of the incident layer 101 and the fluorescent layer 102 being the same, and the shape of the exit layer 103 and the fluorescent layer 103 are the same, the area is smaller than the area of the fluorescent layer 102; or, the exit layer 103 and the fluorescent layer 102 The shape and the area are the same, and the incident layer 101 and the fluorescent layer 103 have the same shape and the area is smaller than the area of the fluorescent layer 102. Alternatively, the shapes of the incident layer 101, the fluorescent layer 102, and the emission layer 103 are different and the areas are different. For the manner in which the heat dissipation frame 104 encapsulates the incident layer 101, the fluorescent layer 102, and the emission layer 103, reference may be made to the above package structure, as long as incident light can be incident from the incident layer 101, and is emitted from the emission layer 103, and details are not described herein.

As an example of the present embodiment, FIG. 3 illustrates a rear view of an exemplary wavelength conversion device according to an embodiment of the present invention; and FIG. 4 illustrates a front view of an exemplary wavelength conversion device according to an embodiment of the present invention. Figure. As shown in FIG. 3, the heat dissipation frame 104 may not cover the incident layer 101. Or the heat dissipation frame 104 may also cover a portion of the incident layer 101, for example, to cover the periphery of the incident layer 101. In this way, it is ensured that incident light can enter from the incident layer 101. As shown in FIG. 4, the heat dissipation frame 104 may not cover the emission layer 103. Alternatively, the heat-dissipating bezel 104 may also cover a portion of the exit layer 103, for example, to cover the periphery of the exit layer 103. In this way, it is ensured that the mixed light can be emitted from the exit layer 103.

In one possible implementation, as shown in FIG. 2, the incident layer 101 disposed on the side of the phosphor layer 102 remote from the exit layer 103 may be in close contact with the phosphor layer 102.

In a possible implementation manner, the incident film transmits incident light having an incident angle less than or equal to a predetermined angle threshold, and reflects incident light having an incident angle greater than a predetermined angle threshold, and the predetermined angle threshold may be 7°.

As an example of the implementation, the characteristics of the incident layer 101 (for example, adjusting the material, thickness, and the like of the incident layer 101) can be adjusted according to the requirements of the product, thereby adjusting the angle threshold, which is not limited by the present invention.

In a possible implementation manner, the wavelength converting material may include at least one of a phosphor, a quantum dot, and a fluorescent dye, and the fluorescent layer 102 may have a thickness of 0.3 mm to 0.5 mm.

As an example of this implementation, the wavelength converting material within the phosphor layer 102 can absorb incident light, and the color temperature deviation of the mixed light can be adjusted by adjusting the thickness of the phosphor layer 102. The thicker the fluorescent layer 102, the more incident light is absorbed, and the greater the color temperature deviation of the mixed light; the thinner the fluorescent layer 102, the less incident light is absorbed, and the smaller the color temperature deviation of the mixed light.

As an example of this implementation, the phosphor layer 102 may also be a YAG:Ce pure phase ceramic or a YAG:Ce single crystal. Wherein, the YAG:Ce pure phase ceramic may be a transparent pure phase ceramic composed of alumina and YAG:Ce, the YAG:Ce single crystal may be a single crystal composed of alumina and YAG:Ce; the fluorescent layer 102 may also be YAG:Ce Multiphase ceramics with alumina. It should be noted that the wavelength conversion material in the fluorescent layer 102 may be other wavelength conversion materials having a wider emission spectrum, which is not limited herein.

In a possible implementation manner, the filter unit may include at least two of the red filter unit 103-R, the blue filter unit 103-B, the green filter unit 103-G, and the yellow filter unit 103-Y. The filter units of the filter unit arrays that form closely spaced boundaries are arranged periodically.

As an example of this implementation, as shown in FIG. 4, the filter unit includes a red filter unit 103-R, a blue filter unit 103-B, a green filter unit 103-G, and a yellow filter unit 103- In the case of Y, each of the filter units can be periodically arranged in the form shown in FIG. It should be noted that, the person skilled in the art can set the periodic arrangement manner of each filter unit according to actual needs, which is not limited herein. Each filter unit in the filter unit array can be arranged by RGBY (red, green, blue and yellow) (as shown in FIG. 4), or RGGB (red, green, blue and blue), RGBB (red, green, blue), etc. Arrangement can be made according to product requirements, and the present invention does not limit this.

As an example of this implementation, under the action of the filter unit array, the mixed light emitted through the exit layer 102 may be array white light divided according to RGB (RGB color mode, one color standard). The color temperature, brightness, and color of the array white light can be adjusted by adjusting the area ratio of each of the filter units, and the area ratio of the filter unit is the ratio of the area of the filter unit to the area of the exit layer 103.

In one possible implementation, the filter unit may be a filter film, and the filter film may be plated on the phosphor layer 102.

As an example of this implementation, the filter film may be plated on the side of the phosphor layer 102 remote from the incident layer 101 by multiple masking, sub-region plating. The filter units can be sequentially plated according to the plating temperature of the materials used in different filter units in the filter film from high to low, so as to achieve orderly non-destructive plating of the filter film.

In a possible implementation manner, the exit layer 103 may further include a second transparent substrate, the filter unit is disposed on the second transparent substrate, and the second transparent substrate has a thickness of less than or equal to 0.35 mm, and the filter unit is a filter film, the filter film being plated on the second transparent substrate.

As an example of this implementation, the material of the second transparent substrate may include a sapphire sheet and/or an optical glass, which may have a thickness of 0.1 mm to 0.3 mm. There is a case of lateral propagation during the propagation of the mixed light in the second transparent substrate, that is, the second transparent substrate has a side guiding light phenomenon. If the second transparent substrate is too thick, the side guiding light is conspicuous and the light loss is severe. Therefore, the thickness of the second transparent substrate can be determined according to the light loss and the processing process, and less light loss is ensured if the processing allows.

As an example of the implementation, in a case where the emission layer 103 is a second transparent substrate coated with a filter film, the emission layer 103 and the fluorescent layer 102 can be seamlessly bonded by using a transparent high thermal conductive bonding material such as silica gel. together.

In one possible implementation, as shown in FIG. 2, the area of the exit layer 103 may be smaller than the area of the phosphor layer 102. 5 illustrates a cross-sectional view of an exemplary wavelength conversion device, as shown in FIG. 5, the area of the exit layer 103 may also be equal to the area of the phosphor layer 102, in accordance with an embodiment of the present invention. Thus, it can be ensured that the emitted light energy formed by the mixing of the emitted light and the incident light is emitted from the exit layer 103, so that the light finally emitted from the wavelength conversion device passes through the exit layer 103.

6 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention, and FIG. 7 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention.

In one possible implementation, as shown in FIGS. 6 and 7 , the area of the incident layer 101 may be less than or equal to the area of the phosphor layer 102 . In this way, incident light entering the phosphor layer 102 from the incident layer 101 can be irradiated onto the wavelength conversion material in the phosphor layer 102.

In one possible implementation, the area of the incident layer 101 may be greater than or equal to the area of the spot of the incident light that is displayed on the light incident surface of the incident layer 101. In this way, as much incident light as possible can be incident on the light incident surface of the incident layer 101, thereby avoiding loss of incident light and improving light extraction efficiency.

FIG. 8 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention, and FIG. 9 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention.

In a possible implementation manner, as shown in FIG. 8 and FIG. 9 , the area of the incident layer 101 may be less than or equal to the area of the fluorescent layer 102 , the device may further include a dielectric layer 105 disposed on the fluorescent layer 102 . On the side away from the exit layer 103, the dielectric layer 105 includes a via hole, and the incident layer 101 is accommodated in the via hole, and the dielectric layer 105 is used to reflect the emitted light and/or the incident light.

As an example of the implementation, the dielectric layer 105 may be in close contact with the fluorescent layer 102. The dielectric layer may be a functional layer that reflects the emitted light, or a functional layer that reflects the incident light, or may simultaneously reflect the emitted light and the incident light. The functional layer; in addition, the dielectric layer may also be a functional layer that enhances the transmission of incident light. This is not a limitation.

As an example of this implementation, as shown in FIG. 8, the heat dissipation frame 104 may encapsulate the incident layer 101, the phosphor layer 102, the exit layer 103, and the dielectric layer 105, and the heat dissipation frame 104 may completely cover the dielectric layer 105. As shown in FIG. 9, the heat dissipation frame 104 may encapsulate the incident layer 101, the fluorescent layer 102, the exit layer 103, and the dielectric layer 105, but the heat dissipation frame 104 does not completely cover the dielectric layer 105, and only covers the sides of the dielectric layer 105. It should be noted that, the person skilled in the art can set whether the heat dissipation frame 104 covers the dielectric layer 105 and the cladding area of the heat dissipation frame 104 covering the dielectric layer 105 according to actual needs, which is not limited herein.

FIG. 10 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention. In a possible implementation manner, as shown in FIG. 10, the device may further include a dielectric layer 105 disposed on a side of the phosphor layer 102 away from the exit layer 103, and the dielectric layer 105 may be disposed on the incident layer 101. Between the phosphor layer 102 and the phosphor layer 102, the dielectric layer 105 is used to reflect emitted light and/or incident light.

As an example of this implementation, as shown in FIG. 10, the area of the dielectric layer 105 may be equal to the area of the fluorescent layer 102, and the area of the incident layer 101 may be less than or equal to the area of the dielectric layer 105, that is, the area of the incident layer 101. The area may be less than or equal to the area of the fluorescent layer 102, which is not limited herein.

In one possible implementation, the dielectric layer 105 may include at least one of an air gap, a reflective film, and a first transparent substrate coated with a reflective film, wherein the reflective film may reflect the emitted light and/or the incident light. When the structure shown in FIG. 8 and FIG. 9 is selected, the reflective film may reflect only the emitted light, or may simultaneously reflect the emitted light and the incident light, or only the incident light; when the structure shown in FIG. 10 is selected, the reflective film Reflects the emitted light.

As an example of this implementation, the material of the first transparent substrate may be a sapphire sheet and/or an optical glass.

In a possible implementation manner, the dielectric layer 105 may be only an air gap. Since the air gap is a dielectric thinner relative to the fluorescent layer, the large angle light emitted from the fluorescent layer 102 will be at the interface between the fluorescent layer 102 and the air gap. Total reflection occurs to further improve light utilization and enhance brightness.

In a possible implementation manner, the reflective film may be a metal reflective film, and the metal reflective film has a thickness of 500 nm to 2000 nm.

As an example of this implementation, the material of the metal reflective film may be metallic aluminum or metallic silver.

In a possible implementation manner, the reflective film may be a dielectric reflective film, and an air gap exists between the dielectric reflective film and an interface of an adjacent layer.

As an example of this implementation, in the case where the reflective film is a dielectric reflective film, an air gap is required between the dielectric reflective film and the incident layer 101 and between the dielectric reflective film and the fluorescent layer 102.

In a possible implementation manner, when the first transparent substrate coated with the reflective film is used as the dielectric layer 105, in the case where the reflective film is plated on the first transparent substrate away from the side of the fluorescent layer 102, the first transparent substrate The thickness of the first transparent substrate may be less than or equal to 5 mm in the case where the reflective film is plated on the first transparent substrate near the side of the fluorescent layer 102.

In one possible implementation, the reflective film may be directly plated on the phosphor layer 102 as the dielectric layer 105. In this way, the heat conduction effect of the dielectric layer can be improved, and the thermal resistance of the dielectric layer can be reduced.

11 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention.

In a possible implementation manner, as shown in FIG. 11, the device may further include a dielectric layer 105. In the case where the dielectric layer 105 is disposed between the incident layer 101 and the fluorescent layer 102, the dielectric layer 105 may coat the fluorescent layer. In the region of the 102 surface that is not in contact with the exit layer 103, the heat dissipation frame 104 may cover the dielectric layer 105.

As an example of this implementation, as shown in FIG. 11, in the case where the area of the emission layer 103 is smaller than the area of the fluorescent layer 102, the dielectric layer 105 needs to cover a region of the surface of the fluorescent layer 102 that is not in contact with the emission layer 103, In order to ensure that the dielectric layer 105 can reflect the emitted light that the phosphor layer 102 is excited. 12 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention, and FIG. 13 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention. In the case where the area of the emission layer 103 is equal to the area of the fluorescent layer 102, as shown in FIG. 12, the dielectric layer 105 may coat a region of the surface of the fluorescent layer 102 that is not in contact with the emission layer 103. In the case where the area of the emission layer 103 is equal to the area of the fluorescent layer 102, as shown in FIG. 13, the dielectric layer 105 may also coat the side of the emission layer 103 and the region of the surface of the fluorescent layer 102 that is not in contact with the emission layer 103. The dielectric layer 105 has a reflective effect, and can reflect the emitted light of different wavelengths generated by the wavelength conversion material in the fluorescent layer 102. The specific manner in which the dielectric layer 105 coats the fluorescent layer 102 can be set according to actual needs, as long as the method is ensured. The reflection of the dielectric layer 105 is sufficient, and is not limited herein.

Figure 14 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention.

In a possible implementation manner, as shown in FIG. 14, the device may further include a dielectric layer 105, which may cover a region of the surface of the fluorescent layer 102 that is not in contact with the incident layer 101 and the exit layer 103, and the dielectric layer 105 is for reflecting emitted light and/or incident light.

As an example of this implementation, the heat dissipation bezel 104 may wrap the dielectric layer 105. 15 shows a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention, and FIG. 16 illustrates a cross-sectional view of an exemplary wavelength conversion device in accordance with an embodiment of the present invention. In the case where the area of the emission layer 103 is equal to the area of the fluorescent layer 102, as shown in FIG. 15, the dielectric layer 105 may be in addition to the region of the surface of the fluorescent layer 102 that is not in contact with the incident layer 101 and the exit layer 103. The side of the exit layer 103 is coated; or, as shown in FIG. 16, the dielectric layer 105 may only cover a region of the surface of the phosphor layer 102 that is not in contact with the incident layer 101 and the exit layer 103, and does not cover the side of the exit layer 103. side.

In a possible implementation manner, the material of the heat dissipation frame 104 may include at least one of sapphire, aluminum nitride, silicon, aluminum oxide, metal aluminum, and copper, and the heat dissipation frame 104 may have a thickness of 0.3 mm to 2 mm.

As an example of this implementation, the material of the heat-dissipating bezel 104 may be a glass, metal or inorganic high thermal conductivity material. For example, the material of the heat dissipation frame 104 may be pure copper or structural aluminum. In this way, the internal structure of the entire device can be protected from external damage, and high heat conduction is ensured, and the heat inside the device is quickly transmitted to the outside to achieve the purpose of heat dissipation. Of course, the inner wall of the heat-dissipating bezel 104 can also be polished, instead of the dielectric layer serving as a reflection. As an example of the implementation, since the incident layer 101, the fluorescent layer 102, the exit layer 103, and the dielectric layer 105 in contact with the heat dissipation frame 104 are in low temperature contact, the heat dissipation frame 104 and each layer can be utilized with a high thermal conductive adhesive. Bonding, it is also possible to press the heat-dissipating bezel 104 and the layers with a highly thermally conductive material. In a possible implementation manner, the incident layer 101 may further include a third transparent substrate, the incident film may be plated on the third transparent substrate, and the incident layer 101 and the fluorescent layer may be formed by using a transparent high thermal conductive bonding material such as silica gel. 102 seamless glued.

In a possible implementation, in the case where the incident layer 101 includes only the incident film, and the exit layer 103 includes only the filter film, the incident film may be directly plated on one side of the fluorescent layer 102, and the filter film is plated. It is made on the other side of the fluorescent layer 102.

It should be noted that although the wavelength conversion device has been described above by way of example 1, those skilled in the art can understand that the present invention is not limited thereto. For example, the heat dissipation frame in the wavelength conversion device illustrated in FIGS. 2 to 16 can be removed. In fact, the user can flexibly set the part according to personal preference and/or actual application scenario, as long as the technical solution of the present invention is satisfied.

In the application of the illumination field, according to the wavelength conversion device of the present invention, the color temperature adjustment, the brightness adjustment, and the color adjustment can be achieved by adjusting the type, size, and area ratio of the filter regions of the respective filter units. Flexibly adjust the properties of the light.

The above description is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or within the technical scope disclosed by the present invention. Replacement should be covered by the scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

A wavelength conversion device comprising: an incident layer, a fluorescent layer, and an exit layer,

The incident layer is disposed on a side of the phosphor layer away from the exit layer, and the incident layer includes an incident film for guiding incident light into the wavelength conversion device;

The phosphor layer includes a wavelength converting material for converting at least a portion of the incident light into emitted light of a different wavelength;

The emission layer is disposed on the fluorescent layer, and comprises an array of filter units composed of a plurality of filter units closely connected to each other;

2. Apparatus according to claim 1 wherein said incident layer is in intimate contact with said phosphor layer.

3. The apparatus according to claim 1, further comprising a dielectric layer covering a region of the surface of the phosphor layer that is not in contact with the incident layer and the exit layer, the medium The layer is for reflecting the emitted light and/or the incident light.

4. The apparatus of claim 1 further comprising a dielectric layer disposed on a side of said phosphor layer remote from said exit layer, said dielectric layer being located at said incident layer Between the phosphor layers, the dielectric layer serves to reflect the emitted light and/or the incident light.

5. The apparatus according to claim 1, further comprising a dielectric layer disposed on a side of the fluorescent layer remote from the exit layer, the dielectric layer including a through hole, The incident layer is received in the through hole, and the dielectric layer is used to reflect the emitted light and/or the incident light.

The apparatus according to any one of claims 3 to 5, wherein the dielectric layer comprises at least one of an air gap, a reflective film, and a first transparent substrate coated with a reflective film,

Wherein the reflective film reflects the emitted light and/or the incident light.

The device according to any one of claims 1 to 5, further comprising:

a heat dissipating frame encapsulating the incident layer, the phosphor layer and the exit layer, or encapsulating the dielectric layer such that the incident light can enter from the incident layer and be emitted from the exit layer.

8. Apparatus according to claim 6 wherein:

In a case where the reflective film is plated on a side of the first transparent substrate away from the fluorescent layer, the thickness of the first transparent substrate is less than or equal to 0.35 mm; or

In the case where the reflective film is plated on the first transparent substrate near the side of the fluorescent layer, the thickness of the first transparent substrate is less than or equal to 5 mm.

9. The apparatus according to claim 6, wherein the reflective film is a metal reflective film, and the metal reflective film has a thickness of 500 nm to 2000 nm.

10. Apparatus according to claim 6 wherein said reflective film is a dielectric reflective film and an air gap exists between said dielectric reflective film and an interface of an adjacent layer.

The device according to any one of claims 1 to 5, wherein the incident film transmits the incident light whose incident angle is less than or equal to a predetermined angle threshold, and the reflected incident angle is greater than the predetermined angle threshold. The incident light is described, and the predetermined angle threshold is 7°.

The device according to any one of claims 1 to 5, wherein the filter unit comprises at least two of a red filter unit, a blue filter unit, a green filter unit, and a yellow filter unit. Each of the filter units of the filter unit array that closely borders the boundary is arranged periodically.

13. Apparatus according to claim 12 wherein said filter unit is a filter film and said filter film is plated on said phosphor layer.

The device according to any one of claims 1 to 5, wherein the exit layer further comprises a second transparent substrate, the filter unit is disposed on the second transparent substrate, and the second transparent substrate The thickness is less than or equal to 0.35 mm, the filter unit is a filter film, and the filter film is plated on the second transparent substrate.

The device according to claim 7, wherein the material of the heat dissipation frame comprises at least one of sapphire, aluminum nitride, silicon, aluminum oxide, aluminum metal and copper, and the thickness of the heat dissipation frame is 0.3mm~2mm.

The device according to any one of claims 1 to 5, wherein the wavelength converting material comprises at least one of a phosphor, a quantum dot and a fluorescent dye, and the thickness of the fluorescent layer is 0.3 mm. 0.5mm.