WO2018214258A1 - Oled显示装置的ovss电压降的补偿方法及像素驱动电路 - Google Patents

Oled显示装置的ovss电压降的补偿方法及像素驱动电路 Download PDF

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WO2018214258A1
WO2018214258A1 PCT/CN2017/092876 CN2017092876W WO2018214258A1 WO 2018214258 A1 WO2018214258 A1 WO 2018214258A1 CN 2017092876 W CN2017092876 W CN 2017092876W WO 2018214258 A1 WO2018214258 A1 WO 2018214258A1
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thin film
electrically connected
film transistor
ovss
voltage
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French (fr)
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王振岭
黄泰钧
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
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    • G09G2320/00—Control of display operating conditions
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    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for compensating an OVSS voltage drop of an OLED display device and a pixel driving circuit.
  • OLED Organic Light Emitting Display
  • OLED Organic Light Emitting Display
  • OLED can be divided into two categories: passive driving and active driving, namely direct addressing and Thin Film Transistor (TFT) matrix addressing.
  • TFT Thin Film Transistor
  • the active drive is also called an Active Matrix (AM) type, and each of the light-emitting units in the AMOLED is independently controlled by TFT addressing.
  • a pixel driving circuit composed of a light emitting unit and a TFT addressing circuit needs to be driven by a wire to load an OLED cathode point voltage (OVSS).
  • OVSS OLED cathode point voltage
  • large-size, high-resolution AMOLED display devices have gradually developed. Accordingly, large-size AMOLED display devices also require larger-sized panels and a larger number of pixels, and the length of the panel wires will become increasingly The longer the wire, the greater the wire resistance. Inevitably, the OVSS voltage will generate a voltage drop (IR Drop) on the wire.
  • the resistance of the wire causes the OVSS voltage obtained by each pixel drive circuit to be different, so that different pixels are different under the same data signal voltage input.
  • the current and brightness output causes the display brightness of the entire panel to be uneven.
  • a conventional AMOLED display device includes: a substrate 10 , a plurality of sub-pixels arranged in an array on the substrate 10 , and a plurality of strips disposed on the substrate 10 .
  • the OVSS traces 20 are arranged in parallel, and each row of sub-pixels is electrically connected to an OVSS trace 20 and the OVSS voltage is supplied from the corresponding OVSS trace 20 from the OVSS trace 20 located at the edge of the substrate 10.
  • the two ends are input to the OVSS trace 20, and the voltage drop caused by the resistance of the OVSS trace 20 causes the actual voltage in the middle of the OVSS trace 20 to be less than the voltage input across the OVSS trace 20, that is,
  • the OVSS voltage received by the sub-pixels in the middle of the substrate 10 is smaller than the OVSS voltage received by the sub-pixels located at both ends of the substrate 10, eventually resulting in uneven display brightness of the entire panel.
  • An object of the present invention is to provide a method for compensating an OVSS voltage drop of an OLED display device, which can compensate for a voltage drop of an OVSS voltage in an OLED display device and improve uniformity of display brightness of the OLED display device.
  • the present invention provides a method for compensating an OVSS voltage drop of an OLED display device, comprising the following steps:
  • Step S1 providing an OLED display device, comprising: a substrate, a plurality of sub-pixels arranged in an array on the substrate, and a plurality of horizontally spaced horizontal OVSS traces disposed on the substrate, Each row of sub-pixels is electrically connected to an OVSS trace; at least one of the plurality of OVSS traces is a detection trace, and at least three sub-pixels of a row of sub-pixels electrically connected to the detection trace are connected. In order to detect the sub-pixels, the detection ends of the traces are electrically connected to a detection sub-pixel;
  • the OVSS trace is used to input an OVSS voltage to each sub-pixel, and the detection sub-pixel is provided with a first pixel driving circuit for detecting a magnitude of an OVSS voltage input to the detection sub-pixel;
  • Step S2 acquiring the gradation to be detected, and detecting, by the first pixel driving circuit, the magnitude of the OVSS voltage input to each of the detecting sub-pixels in the gradation to input the OVSS voltage in each detecting sub-pixel.
  • the size is based on the magnitude of the OVSS voltage input to all the sub-pixels by interpolation, and the OVSS voltage compensation look-up table of the gray scale is obtained according to the magnitude of the OVSS voltage input to all the sub-pixels;
  • Step S3 repeating step S2 a plurality of times until an OVSS voltage compensation lookup table of all gray levels of the OLED display device is obtained;
  • Step S4 Acquire a data signal voltage to be displayed, and compensate a data table voltage to be displayed according to a data signal voltage to be displayed and an OVSS voltage corresponding to the data signal voltage to be displayed, and compensate the data signal voltage to be displayed. And driving the OLED display device to perform screen display by using the compensated data signal voltage.
  • the first pixel driving circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a first capacitor, and a first organic light emitting diode;
  • the gate of the first thin film transistor is connected to the scan signal, the source is connected to the data signal, and the drain is electrically connected to the first node; the gate of the second thin film transistor is electrically connected to the first node, and the drain is connected. a power supply voltage, the source is electrically connected to the second node; and the gate of the third thin film transistor is connected a first control signal, the source is electrically connected to the second node, and the drain is electrically connected to the third node; the gate of the fourth thin film transistor is connected to the detection control signal, and the source is electrically connected to the third node and the drain Electrically connecting the detecting chip, the gate of the fifth thin film transistor is electrically connected to the second control signal, the source is electrically connected to the cathode of the first organic light emitting diode, and the drain is electrically connected to the third node; One end of the capacitor is electrically connected to the first node, and the other end is electrically connected to the drain of the second thin film transistor; the anode of the first
  • a second pixel driving circuit is disposed in each of the plurality of sub-pixels except the detecting sub-pixel, and the second pixel driving circuit includes: a sixth thin film transistor, a seventh thin film transistor, and an eighth thin film transistor. a second capacitor, and a second organic light emitting diode;
  • the gate of the sixth thin film transistor is connected to the scan signal, the source is connected to the data signal, and the drain is electrically connected to the gate of the seventh thin film transistor; the drain of the seventh thin film transistor is connected to the power supply voltage, the source Electrically connecting the anode of the second organic light emitting diode; the gate of the eighth thin film transistor is connected to the detection control signal, the source is electrically connected to the anode of the second organic light emitting diode, and the drain is electrically connected to the detecting chip; One end of the second capacitor is electrically connected to the gate of the seventh thin film transistor, and the other end is electrically connected to the drain of the seventh thin film transistor; the cathode of the second organic light emitting diode is electrically connected to the second pixel driving circuit.
  • the OVSS trace corresponding to the sub-pixel.
  • the process of detecting the magnitude of the OVSS voltage in each of the detecting sub-pixels by the first pixel driving circuit in the step S2 is: first, the scan signal, the first control signal, and the detection control signal all provide a high potential.
  • the second control signal provides a low potential
  • the first, third and fourth thin film transistors are turned on
  • the fifth thin film transistor is turned off
  • the first node writes a detected data signal voltage corresponding to the gray level to be detected
  • the detection control signal and the second control signal provide a high potential
  • the first and third thin film transistors are turned off
  • the fourth thin film transistor and the fifth thin film transistor are turned on, and the voltage difference between the gate and the source of the second thin film transistor is kept unchanged, and the OVSS voltage is detected by the detecting chip.
  • the substrate includes: a first detection area, a second detection area, and a third detection area that are sequentially arranged in a vertical direction.
  • One of the plurality of OVSS traces has an OVSS trace as a detection trace, and the one trace is located in the second detection area of the substrate.
  • the three OVSS traces of the plurality of OVSS traces are detection traces, and the three detection traces are respectively located in the first detection area, the second detection area, and the third detection area of the substrate. .
  • the second control signal controls the fifth thin film transistor to be turned off.
  • the present invention also provides a pixel driving circuit comprising: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a first capacitor, and a first organic light emitting diode;
  • the gate of the first thin film transistor is connected to the scan signal, the source is connected to the data signal, and the drain is electrically connected to the first node; the gate of the second thin film transistor is electrically connected to the first node, and the drain is connected. a power supply voltage, the source is electrically connected to the second node; the gate of the third thin film transistor is connected to the first control signal, the source is electrically connected to the second node, and the drain is electrically connected to the third node;
  • the gate of the thin film transistor is connected to the detection control signal, the source is electrically connected to the third node, the drain is electrically connected to the detection chip, and the gate of the fifth thin film transistor is electrically connected to the second control signal, and the source is electrically Connected to the cathode of the first organic light emitting diode, the drain is electrically connected to the third node; one end of the first capacitor is electrically connected to the first node, and the other end is electrically connected to the drain of the second thin film transistor;
  • the invention also provides a method for compensating the OVSS voltage drop of an OLED display device, comprising the following steps:
  • Step S1 providing an OLED display device, comprising: a substrate, a plurality of sub-pixels arranged in an array on the substrate, and a plurality of horizontally spaced horizontal OVSS traces disposed on the substrate, Each row of sub-pixels is electrically connected to an OVSS trace; at least one of the plurality of OVSS traces is a detection trace, and at least three sub-pixels of the row electrically connected to the detection trace are electrically connected.
  • the pixel is a detecting sub-pixel, and the two ends of the detecting line and the middle point are electrically connected to one detecting sub-pixel;
  • the OVSS trace is used to input an OVSS voltage to each sub-pixel, and the detection sub-pixel is provided with a first pixel driving circuit for detecting a magnitude of an OVSS voltage input to the detection sub-pixel;
  • Step S2 acquiring the gradation to be detected, and detecting, by the first pixel driving circuit, the magnitude of the OVSS voltage input to each of the detecting sub-pixels in the gradation to input the OVSS voltage in each detecting sub-pixel.
  • the size is based on the magnitude of the OVSS voltage input to all the sub-pixels by interpolation, and the OVSS voltage compensation look-up table of the gray scale is obtained according to the magnitude of the OVSS voltage input to all the sub-pixels;
  • Step S3 repeating step S2 a plurality of times until an OVSS voltage compensation lookup table of all gray levels of the OLED display device is obtained;
  • Step S4 Acquire a data signal voltage to be displayed, and compensate a data table voltage to be displayed according to a data signal voltage to be displayed and an OVSS voltage corresponding to the data signal voltage to be displayed, and compensate the data signal voltage to be displayed. And driving the OLED display device to perform screen display by using the compensated data signal voltage;
  • the first pixel driving circuit includes: a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a first capacitor, and a first organic light emitting diode;
  • the gate of the first thin film transistor is connected to the scan signal, the source is connected to the data signal, and the drain is electrically connected to the first node; the gate of the second thin film transistor is electrically connected to the first node, and the drain is connected. a power supply voltage, the source is electrically connected to the second node; the gate of the third thin film transistor is connected to the first control signal, the source is electrically connected to the second node, and the drain is electrically connected to the third node;
  • the gate of the thin film transistor is connected to the detection control signal, the source is electrically connected to the third node, the drain is electrically connected to the detection chip, and the gate of the fifth thin film transistor is electrically connected to the second control signal, and the source is electrically Connected to the cathode of the first organic light emitting diode, the drain is electrically connected to the third node; one end of the first capacitor is electrically connected to the first node, and the other end is electrically connected to the drain of the second thin film transistor;
  • the process of detecting the magnitude of the OVSS voltage in each of the detecting sub-pixels by the first pixel driving circuit in the step S2 is: first, the scanning signal, the first control signal, and the detection control signal are both provided high. a potential, a second control signal provides a low potential, the first, third and fourth thin film transistors are turned on, the fifth thin film transistor is turned off, and the first node writes a detected data signal corresponding to the gray level to be detected Voltage, the second node writes a reference voltage; then, the scan signal and the first control signal both provide a low potential, and the detection control signal and the second control signal provide a high potential, the first and third thin film transistors Turning off, the fourth thin film transistor and the fifth thin film transistor are turned on, the voltage difference between the gate and the source of the second thin film transistor is kept unchanged, and the OVSS voltage is detected by the detecting chip;
  • the substrate includes: a first detection area, a second detection area, and a third detection area arranged in a vertical direction;
  • the second control signal controls the fifth thin film transistor to be turned off.
  • the present invention provides a method for compensating an OVSS voltage drop of an OLED display device, by using a first pixel driving circuit having a function of detecting an OVSS voltage in a part of sub-pixels of the OLED display device, and reusing
  • the first pixel driving circuit detects the OVSS voltage of the sub-pixels, and obtains the OVSS voltage of all the sub-pixels of the OLED display device by interpolation according to the detected OVSS voltage of the sub-pixels, and then according to The OVSS voltage of all the sub-pixels of the OLED display device is obtained by the OVSS voltage compensation look-up table, and finally the data signal voltage is compensated by the OVSS voltage compensation look-up table, and then the compensated data signal voltage is used to drive the OLED display device to perform screen display.
  • the voltage drop of the OVSS voltage in the device is used to improve the uniformity of display brightness of the OLED display device.
  • the invention also provides a pixel
  • FIG. 1 is a schematic view of a conventional AMOLED display device
  • step S1 is a schematic diagram of step S1 of a method for compensating for an OVSS voltage drop of an OLED display device of the present invention
  • FIG. 3 is a circuit diagram of a first pixel driving circuit and a circuit diagram of a pixel driving circuit of the present invention in a method for compensating an OVSS voltage drop of an OLED display device of the present invention
  • FIG. 4 is a circuit diagram of a second pixel driving circuit in a method for compensating an OVSS voltage drop of an OLED display device of the present invention
  • FIG. 5 is an operation waveform diagram of the pixel driving circuit shown in FIG. 3;
  • FIG. 6 is a flow chart of a method for compensating for a voltage drop of an OVSS of an OLED display device of the present invention.
  • the present invention provides a method for compensating an OVSS voltage drop of an OLED display device, including the following steps:
  • an OLED display device includes: a substrate 1, a plurality of sub-pixels 2 arranged in an array on the substrate 1, and a plurality of parallels disposed on the substrate 1 A horizontally arranged OVSS trace 3, each row of sub-pixels 2 is electrically connected to an OVSS trace 3; at least one of the plurality of OVSS traces 3 is an OVSS trace 3 for detecting traces 31, and The at least three sub-pixels 2 of the row of sub-pixels 2 electrically connected to the trace 31 are the detection sub-pixels 21, and the two ends of the detection trace 31 are electrically connected to a detection sub-pixel 21;
  • the OVSS trace 3 is used to input an OVSS voltage to each of the sub-pixels 2, and the detection sub-pixel 21 is provided with a first pixel driving circuit 210 for detecting the magnitude of the OVSS voltage input to the detection sub-pixel 21. .
  • the first pixel driving circuit 210 includes: a first thin film crystal a tube T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a first capacitor C1, and a first organic light emitting diode D1;
  • the gate of the first thin film transistor T1 is connected to the scan signal SCAN, the source is connected to the data signal Data, the drain is electrically connected to the first node G, and the gate of the second thin film transistor T2 is electrically connected to the first node.
  • G the drain is connected to the power supply voltage OVDD, the source is electrically connected to the second node S;
  • the gate of the third thin film transistor T3 is connected to the first control signal Ctrl1, and the source is electrically connected to the second node S, the drain Electrically connecting the third node P;
  • the gate of the fourth thin film transistor T4 is connected to the detection control signal SEN, the source is electrically connected to the third node P, and the drain is electrically connected to the detection chip SL,
  • the fifth The gate of the thin film transistor T5 is electrically connected to the second control signal Ctrl2, the source is electrically connected to the cathode of the first organic light emitting diode D1, and the drain is electrically connected to the third node P
  • each of the plurality of sub-pixels 2 except the detection sub-pixel 21 is provided with a second pixel driving circuit 220, and the second pixel driving circuit 220 includes: a sixth thin film transistor T6. a seventh thin film transistor T7, an eighth thin film transistor T8, a second capacitor C2, and a second organic light emitting diode D2;
  • the gate of the sixth thin film transistor T6 is connected to the scan signal SCAN, the source is connected to the data signal Data, the drain is electrically connected to the gate of the seventh thin film transistor T7, and the drain of the seventh thin film transistor T7 is connected.
  • the power supply voltage OVDD is electrically connected to the anode of the second organic light emitting diode D2; the gate of the eighth thin film transistor T8 is connected to the detection control signal SEN, and the source is electrically connected to the anode of the second organic light emitting diode D2.
  • the drain is electrically connected to the detecting chip SL; one end of the second capacitor C2 is electrically connected to the gate of the seventh thin film transistor T7, and the other end is electrically connected to the drain of the seventh thin film transistor T7; the second organic light emitting
  • the cathode of the diode D2 is electrically connected to the OVSS trace 3 corresponding to the sub-pixel 2 where the second pixel driving circuit 220 is located.
  • the substrate 1 includes: a first detecting area 11, a second detecting area 12, and a third detecting area 13 which are sequentially arranged in a vertical direction, and the first detecting
  • Each of the area 11, the second detection area 12, and the third detection area 13 is provided with a plurality of OVSS traces 3, preferably, the first detection area 11, the second detection area 12, and the third
  • the detection zones 13 have the same width in the vertical direction.
  • one of the plurality of OVSS traces 3 is an OVSS trace 3 that is a detection trace 31.
  • the one trace is located in the second detection region 12 of the substrate 1.
  • the one detection trace 31 is an OVSS trace 3 located near the horizontal center line of the second detection area 12.
  • the three OVSS traces 3 of the plurality of OVSS traces 3 are the detection traces 31, and the three detection traces 31 are respectively located in the first detection area 11 and the second detection of the substrate 1.
  • the three detection traces 31 are an OVSS trace 3 located at the top of the substrate 1 and located near the horizontal center line of the substrate 1 in the measurement area 12 and the third detection area 13 respectively.
  • each detecting trace 21 may further add more detecting sub-pixels 21 as needed. That is, the pixel driving circuit in the more sub-pixels 2 is replaced with the first pixel driving circuit 210 to improve the accuracy of the OVSS voltage input to all the sub-pixels 2 obtained by the interpolation method.
  • Step S2 Obtaining the gradation to be detected, and detecting, by the first pixel driving circuit 210, the magnitude of the OVSS voltage input to each of the detecting sub-pixels 21 in the gradation for inputting into each detecting sub-pixel 21
  • the magnitude of the OVSS voltage is based on the magnitude of the OVSS voltage input to all of the sub-pixels 2 by interpolation, and the OVSS voltage compensation lookup table of the gradation is obtained according to the magnitude of the OVSS voltage input to all of the sub-pixels 2 .
  • the process of detecting the magnitude of the OVSS voltage in each of the detecting sub-pixels 21 by the first pixel driving circuit 210 in the step S2 is: first, the scanning signal SCAN The first control signal Ctrl1 and the detection control signal SEN both provide a high potential, the second control signal Ctrl2 provides a low potential, and the first, third and fourth thin film transistors T1, T3, T4 are turned on, the fifth thin film transistor T5 is turned off, the first node G writes a detected data signal voltage corresponding to the gray level to be detected, the second node S writes a reference voltage Vref; then, the scan signal SCAN and the first control signal Ctrl1 provides a low potential, the detection control signal SEN and the second control signal Ctrl2 provide a high potential, the first and third thin film transistors T1, T3 are turned off, and the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on.
  • Step S3 repeating step S2 a plurality of times until an OVSS voltage compensation lookup table of all gray levels of the OLED display device is obtained;
  • Step S4 Acquire a data signal voltage to be displayed, and compensate a data table voltage to be displayed according to a data signal voltage to be displayed and an OVSS voltage corresponding to the data signal voltage to be displayed, and compensate the data signal voltage to be displayed. And driving the OLED display device to perform screen display by using the compensated data signal voltage.
  • the second control signal Ctrl2 controls the fifth thin film transistor T5 to be turned off.
  • the OLED display device OVSS voltage drop compensation method is adopted in the OLED display
  • a first pixel driving circuit having a function of detecting an OVSS voltage is disposed in a portion of the sub-pixels of the display device, and the OVSS voltage of the sub-pixels is detected by the first pixel driving circuit, and the OVSS of the sub-pixels is detected.
  • the voltage is based on the OVSS voltage of all the sub-pixels of the OLED display device by interpolation, and then the OVSS voltage compensation look-up table is obtained according to the OVSS voltage of all the sub-pixels of the OLED display device, and finally the OVSS voltage compensation look-up table is obtained.
  • the data signal voltage is compensated, and the compensated data signal voltage is used to drive the OLED display device to display the screen, which can effectively compensate the voltage drop of the OVSS voltage in the OLED display device, and improve the uniformity of the display brightness of the OLED display device.
  • the present invention further provides a pixel driving circuit including: a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, and a first capacitor.
  • a first thin film transistor T1 a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, and a first capacitor.
  • C1 a first organic light emitting diode D1;
  • the gate of the first thin film transistor T1 is connected to the scan signal SCAN, the source is connected to the data signal Data, the drain is electrically connected to the first node G, and the gate of the second thin film transistor T2 is electrically connected to the first node.
  • G the drain is connected to the power supply voltage OVDD, the source is electrically connected to the second node S;
  • the gate of the third thin film transistor T3 is connected to the first control signal Ctrl1, and the source is electrically connected to the second node S, the drain Electrically connecting the third node P;
  • the gate of the fourth thin film transistor T4 is connected to the detection control signal SEN, the source is electrically connected to the third node P, and the drain is electrically connected to the detection chip SL,
  • the fifth The gate of the thin film transistor T5 is electrically connected to the second control signal Ctrl2, the source is electrically connected to the cathode of the first organic light emitting diode D1, and the drain is electrically connected to the third node P
  • the pixel driving circuit is the first pixel driving circuit 210 disposed in the detecting sub-pixel 21 in the method for compensating the voltage drop of the OLED display device OVSS, and the working process thereof is opposite to the voltage drop of the OLED display device OVSS.
  • the process in which the first pixel driving circuit 210 detects the magnitude of the OVSS voltage in the detecting sub-pixel 21 is the same, and is not described herein.
  • the pixel driving circuit can detect the OVSS voltage simply and quickly, and can be applied to compensate the OVSS voltage drop of the OLED display device.
  • the present invention provides a method for compensating an OVSS voltage drop of an OLED display device, by using a first pixel driving circuit having a function of detecting an OVSS voltage in a part of sub-pixels of the OLED display device, a pixel driving circuit detects an OVSS voltage of the sub-pixels, and obtains an OVSS voltage of all sub-pixels of the OLED display device by interpolation according to the detected OVSS voltage of the sub-pixels, and then according to the OLED display
  • the OVSS voltage of all the sub-pixels of the display device is obtained by the OVSS voltage compensation look-up table.
  • the data signal voltage is compensated by the OVSS voltage compensation look-up table, and the compensated data signal voltage is used to drive the OLED display device to perform screen display, which can effectively compensate
  • the voltage drop of the OVSS voltage in the OLED display device improves the uniformity of display brightness of the OLED display device.
  • the invention also provides a pixel driving circuit capable of detecting the OVSS voltage simply and quickly.

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Abstract

一种OLED显示装置OVSS电压降的补偿方法及像素驱动电路。补偿方法通过在OLED显示装置的部分子像素（21）中设置具有侦测OVSS电压功能的第一像素驱动电路（210），再利用第一像素驱动电路（210）侦测这些子像素（21）的OVSS电压，并以侦测到的子像素（21）的OVSS电压为依据通过插值法得出OLED显示装置的全部子像素（2）的OVSS电压，然后根据OLED显示装置的全部子像素（2）的OVSS电压得出OVSS电压补偿查找表，最后通过OVSS电压补偿查找表对数据信号电压进行补偿，再用补偿后的数据信号电压驱动OLED显示装置进行画面显示，能够有效补偿OLED显示装置中OVSS电压的电压降，提升OLED显示装置显示亮度的均匀性。

Description

OLED显示装置的OVSS电压降的补偿方法及像素驱动电路 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示装置的OVSS电压降的补偿方法及像素驱动电路。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示装置具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源驱动和有源驱动两大类，即直接寻址和薄膜晶体管(Thin Film Transistor，TFT)矩阵寻址两类。其中，有源驱动也称为有源矩阵(Active Matrix，AM)型，AMOLED中的每个发光单元都由TFT寻址独立控制。发光单元和TFT寻址电路组成的像素驱动电路需要通过导线对其加载OLED阴极点电压(OVSS)进行驱动。
随着时代及技术的进步，大尺寸、高分辨率的AMOLED显示装置逐渐发展起来，相应的，大尺寸AMOLED显示装置也需要较大尺寸的面板及较多数量的像素，面板导线长度将越来越长，导线电阻也越大。不可避免的，OVSS电压会在导线上产生电压降(IR Drop)，导线的电阻值使得每一个像素驱动电路获得的OVSS电压不同，从而使得在相同的数据信号电压输入下，不同的像素有不同的电流、亮度输出，导致整个面板的显示亮度不均匀。
具体地，请参阅图1，现有的一种AMOLED显示装置包括：基板10、设于所述基板10上的呈阵列式排布的多个子像素、以及设于所述基板上10的多条平行间隔排列的OVSS走线20，每一行子像素对应电性连接一条OVSS走线20并由对应的OVSS走线20提供OVSS电压，所述OVSS电压从位于基板10边缘的所述OVSS走线20的两端输入到所述OVSS走线20中，由于OVSS走线20的电阻引起电压降会导致所述OVSS走线20的中间的实际电压小于OVSS走线20两端输入的电压，也即位于所述基板10中间的子像素接收到的OVSS电压小于位于所述基板10的两端的子像素接收到的OVSS电压，最终导致整个面板的显示亮度不均匀。
发明内容
本发明的目的在于提供一种OLED显示装置OVSS电压降的补偿方法，能够补偿OLED显示装置中OVSS电压的电压降，提升OLED显示装置显示亮度的均匀性。
本发明的目的还在于提供一种像素驱动电路，能够简单快捷的侦测OVSS电压。
为实现上述目的，本发明提供了一种OLED显示装置OVSS电压降的补偿方法，包括如下步骤：
步骤S1、提供一OLED显示装置，包括：基板、设于所述基板上的呈阵列式排布的多个子像素、以及设于所述基板上的多条平行间隔排列的水平的OVSS走线，每一行子像素对应电性连接一条OVSS走线；所述多条OVSS走线中至少有一条OVSS走线为侦测走线，与侦测走线电性连接的一行子像素中至少有三个子像素为侦测子像素，且侦测走线的两端点及中点分别电性连接一个侦测子像素；
所述OVSS走线用于向各个子像素输入OVSS电压，所述侦测子像素中设有用于侦测输入到侦测子像素中的OVSS电压的大小的第一像素驱动电路；
步骤S2、获取待侦测的灰度，通过第一像素驱动电路侦测该灰度下输入到各个侦测子像素中的OVSS电压的大小，以输入到各个侦测子像素中的OVSS电压的大小为依据通过插值法得出输入到全部子像素中的OVSS电压的大小，根据所述输入到全部子像素中的OVSS电压的大小得出该灰度的OVSS电压补偿查找表；
步骤S3、多次重复步骤S2，直至得到所述OLED显示装置的所有灰度的OVSS电压补偿查找表；
步骤S4、获取待显示的数据信号电压，根据待显示的数据信号电压和与该待显示的数据信号电压对应的灰度的OVSS电压补偿查找表，对所述待显示的数据信号电压进行补偿，并利用补偿后的数据信号电压驱动所述OLED显示装置进行画面显示。
所述第一像素驱动电路包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入 第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极电性连接该第一像素驱动电路所在的子像素对应的OVSS走线。
所述多个子像素中除侦测子像素以外的各个子像素中均设有第二像素驱动电路，所述第二像素驱动电路包括：第六薄膜晶体管、第七薄膜晶体管、第八薄膜晶体管、第二电容、以及第二有机发光二极管；
所述第六薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第七薄膜晶体管的栅极；所述第七薄膜晶体管的漏极接入电源电压，源极电性连接第二有机发光二极管的阳极；所述第八薄膜晶体管的栅极接入侦测控制信号，源极电性连接第二有机发光二极管的阳极，漏极电性连接侦测芯片；所述第二电容的一端电性连接第七薄膜晶体管的栅极，另一端电性连接第七薄膜晶体管的漏极；所述第二有机发光二极管的阴极电性连接该第二像素驱动电路所在的子像素对应的OVSS走线。
所述步骤S2中通过第一像素驱动电路侦测各个侦测子像素中的OVSS电压的大小的过程为：首先，所述扫描信号、第一控制信号、和侦测控制信号均提供高电位，第二控制信号提供低电位，第一、第三和第四薄膜晶体管打开，所述第五薄膜晶体管关闭，所述第一节点写入与待侦测的灰度对应的侦测数据信号电压，所述第二节点写入参考电压；接着，所述扫描信号和第一控制信号均提供低电位，侦测控制信号和第二控制信号提供高电位，所述第一和第三薄膜晶体管关闭，所述第四薄膜晶体管和第五薄膜晶体管打开，所述第二薄膜晶体管栅极与源极之间电压差值保持不变，通过侦测芯片侦测OVSS电压。
所述基板包括：沿竖直方向依次排列的第一侦测区、第二侦测区、以及第三侦测区。
所述多条OVSS走线中有一条OVSS走线为侦测走线，该一条侦测走线位于所述基板的第二侦测区内。
所述多条OVSS走线中有三条OVSS走线为侦测走线，该三条侦测走线分别位于所述基板的第一侦测区、第二侦测区、以及第三侦测区内。
所述步骤S4中，所述OLED显示装置进行画面显示时，所述第二控制信号控制所述第五薄膜晶体管关闭。
本发明还提供一种像素驱动电路，包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极接入OVSS电压。
本发明还提供一种OLED显示装置OVSS电压降的补偿方法，包括如下步骤：
步骤S1、提供一OLED显示装置，包括：基板、设于所述基板上的呈阵列式排布的多个子像素、以及设于所述基板上的多条平行间隔排列的水平的OVSS走线，每一行子像素对应电性连接一条OVSS走线；所述多条OVSS走线中至少有一条OVSS走线为侦测走线，与侦测走线对应电性连接的一行子像素中至少有三个子像素为侦测子像素，且侦测走线的两端点及中点分别电性连接一个侦测子像素；
所述OVSS走线用于向各个子像素输入OVSS电压，所述侦测子像素中设有用于侦测输入到侦测子像素中的OVSS电压的大小的第一像素驱动电路；
步骤S2、获取待侦测的灰度，通过第一像素驱动电路侦测该灰度下输入到各个侦测子像素中的OVSS电压的大小，以输入到各个侦测子像素中的OVSS电压的大小为依据通过插值法得出输入到全部子像素中的OVSS电压的大小，根据所述输入到全部子像素中的OVSS电压的大小得出该灰度的OVSS电压补偿查找表；
步骤S3、多次重复步骤S2，直至得到所述OLED显示装置的所有灰度的OVSS电压补偿查找表；
步骤S4、获取待显示的数据信号电压，根据待显示的数据信号电压和与该待显示的数据信号电压对应的灰度的OVSS电压补偿查找表，对所述待显示的数据信号电压进行补偿，并利用补偿后的数据信号电压驱动所述OLED显示装置进行画面显示；
其中，所述第一像素驱动电路包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极电性连接该第一像素驱动电路所在的子像素对应的OVSS走线；
其中，所述步骤S2中通过第一像素驱动电路侦测各个侦测子像素中的OVSS电压的大小的过程为：首先，所述扫描信号、第一控制信号、和侦测控制信号均提供高电位，第二控制信号提供低电位，第一、第三和第四薄膜晶体管打开，所述第五薄膜晶体管关闭，所述第一节点写入与待侦测的灰度对应的侦测数据信号电压，所述第二节点写入参考电压；接着，所述扫描信号和第一控制信号均提供低电位，侦测控制信号和第二控制信号提供高电位，所述第一和第三薄膜晶体管关闭，所述第四薄膜晶体管和第五薄膜晶体管打开，所述第二薄膜晶体管栅极与源极之间电压差值保持不变，通过侦测芯片侦测OVSS电压；
其中，所述基板包括：沿竖直方向依次排列的第一侦测区、第二侦测区、以及第三侦测区；
其中，所述步骤S4中，所述OLED显示装置进行画面显示时，所述第二控制信号控制所述第五薄膜晶体管关闭。
本发明的有益效果：本发明提供了一种OLED显示装置OVSS电压降的补偿方法，通过在所述OLED显示装置的部分子像素中设置具有侦测OVSS电压功能的第一像素驱动电路，再利用第一像素驱动电路侦测该些子像素的OVSS电压，并以侦测到的该些子像素的OVSS电压为依据通过插值法得出所述OLED显示装置的全部子像素的OVSS电压，然后根据所述OLED显示装置的全部子像素的OVSS电压得出OVSS电压补偿查找表，最后通过OVSS电压补偿查找表对数据信号电压进行补偿，再用补偿后的数据信号电压驱动OLED显示装置进行画面显示，能够有效补偿OLED显 示装置中OVSS电压的电压降，提升OLED显示装置显示亮度的均匀性。本发明还提供一种像素驱动电路，能够简单快捷的侦测OVSS电压。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的AMOLED显示装置的示意图；
图2为本发明的OLED显示装置OVSS电压降的补偿方法的步骤S1的示意图；
图3为本发明的OLED显示装置OVSS电压降的补偿方法中第一像素驱动电路的电路图暨本发明的像素驱动电路的电路图；
图4为本发明的OLED显示装置OVSS电压降的补偿方法中第二像素驱动电路的电路图；
图5为图3所示的像素驱动电路的工作波形图；
图6为本发明的OLED显示装置OVSS电压降的补偿方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图6，本发明提供一种OLED显示装置OVSS电压降的补偿方法，包括如下步骤：
步骤S1、请参阅图2，提供一OLED显示装置，包括：基板1、设于所述基板1上的呈阵列式排布的多个子像素2、以及设于所述基板1上的多条平行间隔排列的水平的OVSS走线3，每一行子像素2对应电性连接一条OVSS走线3；所述多条OVSS走线3中至少有一条OVSS走线3为侦测走线31，与侦测走线31电性连接的一行子像素2中至少有三个子像素2为侦测子像素21，且侦测走线31的两端点及中点分别电性连接一个侦测子像素21；
所述OVSS走线3用于向各个子像素2输入OVSS电压，所述侦测子像素21中设有用于侦测输入到侦测子像素21中的OVSS电压的大小的第一像素驱动电路210。
具体地，请参阅图3，所述第一像素驱动电路210包括：第一薄膜晶体 管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第一电容C1、以及第一有机发光二极管D1；
所述第一薄膜晶体管T1的栅极接入扫描信号SCAN，源极接入数据信号Data，漏极电性连接第一节点G；所述第二薄膜晶体管T2的栅极电性连接第一节点G，漏极接入电源电压OVDD，源极电性连接第二节点S；所述第三薄膜晶体管T3的栅极接入第一控制信号Ctrl1，源极电性连接第二节点S，漏极电性连接第三节点P；所述第四薄膜晶体管T4的栅极接入侦测控制信号SEN，源极电性连接第三节点P，漏极电性连接侦测芯片SL，所述第五薄膜晶体管T5的栅极电性连接第二控制信号Ctrl2，源极电性连接第一有机发光二极管D1的阴极，漏极电性连接第三节点P；所述第一电容C1的一端电性连接第一节点G，另一端电性连接第二薄膜晶体管T2的漏极；所述第一有机发光二极管D1的阳极电性连接第二节点S阴极电性连接该第一像素驱动电路210所在的子像素2对应的OVSS走线3。
请参阅图4，所述多个子像素2中除侦测子像素21以外的各个子像素2中均设有第二像素驱动电路220，所述第二像素驱动电路220包括：第六薄膜晶体管T6、第七薄膜晶体管T7、第八薄膜晶体管T8、第二电容C2、以及第二有机发光二极管D2；
所述第六薄膜晶体管T6的栅极接入扫描信号SCAN，源极接入数据信号Data，漏极电性连接第七薄膜晶体管T7的栅极；所述第七薄膜晶体管T7的漏极接入电源电压OVDD，源极电性连接第二有机发光二极管D2的阳极；所述第八薄膜晶体管T8的栅极接入侦测控制信号SEN，源极电性连接第二有机发光二极管D2的阳极，漏极电性连接侦测芯片SL；所述第二电容C2的一端电性连接第七薄膜晶体管T7的栅极，另一端电性连接第七薄膜晶体管T7的漏极；所述第二有机发光二极管D2的阴极电性连接该第二像素驱动电路220所在的子像素2对应的OVSS走线3。
具体地，如图2所示，所述基板1包括：沿竖直方向依次排列的第一侦测区11、第二侦测区12、以及第三侦测区13，所述第一侦测区11、第二侦测区12、以及第三侦测区13中均设有多条OVSS走线3，优选地，所述第一侦测区11、第二侦测区12、以及第三侦测区13在竖直方向上的宽度相等。
可选地，所述多条OVSS走线3中有一条OVSS走线3为侦测走线31，该一条侦测走线31位于所述基板1的第二侦测区12内，优选地，所述该一条侦测走线31为位于所述第二侦测区12水平中心线附近的一条OVSS走线3。
可选地，所述多条OVSS走线3中有三条OVSS走线3为侦测走线31，该三条侦测走线31分别位于所述基板1的第一侦测区11、第二侦测区12、以及第三侦测区13内，优选地，所述该三条侦测走线31分别为位于所述基板1最上方的一条OVSS走线3、位于基板1的水平中心线附近的一条OVSS走线3、以及位于所述基板1最下方的一条OVSS走线3。
进一步地，除了与侦测走线31的两端点及中点电性连接的三个侦测子像素21以外，每一条侦测走线21上还可以根据需要增设更多的侦测子像素21，也即将更多的子像素2中像素驱动电路替换为第一像素驱动电路210，以提升后续通过插值法得出的输入到全部子像素2的OVSS电压的精度。
步骤S2、获取待侦测的灰度，通过第一像素驱动电路210侦测该灰度下输入到各个侦测子像素21中的OVSS电压的大小，以输入到各个侦测子像素21中的OVSS电压的大小为依据通过插值法得出输入到全部子像素2中的OVSS电压的大小，根据所述输入到全部子像素2中的OVSS电压的大小得出该灰度的OVSS电压补偿查找表。
具体地，请参阅图5，并结合图3，所述步骤S2中通过第一像素驱动电路210侦测各个侦测子像素21中的OVSS电压的大小的过程为：首先，所述扫描信号SCAN、第一控制信号Ctrl1、和侦测控制信号SEN均提供高电位，第二控制信号Ctrl2提供低电位，第一、第三和第四薄膜晶体管T1、T3、T4打开，所述第五薄膜晶体管T5关闭，所述第一节点G写入与待侦测的灰度对应的侦测数据信号电压，所述第二节点S写入参考电压Vref；接着，所述扫描信号SCAN和第一控制信号Ctrl1均提供低电位，侦测控制信号SEN和第二控制信号Ctrl2提供高电位，所述第一和第三薄膜晶体管T1、T3关闭，所述第四薄膜晶体管T4和第五薄膜晶体管T5打开，所述第二薄膜晶体管T2栅极与源极之间电压差值保持不变，通过侦测芯片SL侦测OVSS电压。
步骤S3、多次重复步骤S2，直至得到所述OLED显示装置的所有灰度的OVSS电压补偿查找表；
步骤S4、获取待显示的数据信号电压，根据待显示的数据信号电压和与该待显示的数据信号电压对应的灰度的OVSS电压补偿查找表，对所述待显示的数据信号电压进行补偿，并利用补偿后的数据信号电压驱动所述OLED显示装置进行画面显示。
所述步骤S4中，所述OLED显示装置进行画面显示时，所述第二控制信号Ctrl2控制所述第五薄膜晶体管T5关闭。
上述OLED显示装置OVSS电压降的补偿方法，通过在所述OLED显 示装置的部分子像素中设置具有侦测OVSS电压功能的第一像素驱动电路，再利用第一像素驱动电路侦测该些子像素的OVSS电压，并以侦测到的该些子像素的OVSS电压为依据通过插值法得出所述OLED显示装置的全部子像素的OVSS电压，然后根据所述OLED显示装置的全部子像素的OVSS电压得出OVSS电压补偿查找表，最后通过OVSS电压补偿查找表对数据信号电压进行补偿，再用补偿后的数据信号电压驱动OLED显示装置进行画面显示，能够有效补偿OLED显示装置中OVSS电压的电压降，提升OLED显示装置显示亮度的均匀性。
请参阅图3，本发明还提供一种像素驱动电路，包括：第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4、第五薄膜晶体管T5、第一电容C1、以及第一有机发光二极管D1；
所述第一薄膜晶体管T1的栅极接入扫描信号SCAN，源极接入数据信号Data，漏极电性连接第一节点G；所述第二薄膜晶体管T2的栅极电性连接第一节点G，漏极接入电源电压OVDD，源极电性连接第二节点S；所述第三薄膜晶体管T3的栅极接入第一控制信号Ctrl1，源极电性连接第二节点S，漏极电性连接第三节点P；所述第四薄膜晶体管T4的栅极接入侦测控制信号SEN，源极电性连接第三节点P，漏极电性连接侦测芯片SL，所述第五薄膜晶体管T5的栅极电性连接第二控制信号Ctrl2，源极电性连接第一有机发光二极管D1的阴极，漏极电性连接第三节点P；所述第一电容C1的一端电性连接第一节点G，另一端电性连接第二薄膜晶体管T2的漏极；所述第一有机发光二极管D1的阳极电性连接第二节点S，阴极接入OVSS电压。
需要说明的是，该像素驱动电路即为上述OLED显示装置OVSS电压降的补偿方法中设于侦测子像素21中的第一像素驱动电路210，其工作过程与上述OLED显示装置OVSS电压降的补偿方法的步骤S2中第一像素驱动电路210侦测侦测子像素21中的OVSS电压的大小的过程一致，在此不进行赘述。
上述像素驱动电路，能够简单快捷的侦测OVSS电压，可应用于对OLED显示装置的OVSS电压降进行补偿。
综上所述，本发明提供了一种OLED显示装置OVSS电压降的补偿方法，通过在所述OLED显示装置的部分子像素中设置具有侦测OVSS电压功能的第一像素驱动电路，再利用第一像素驱动电路侦测该些子像素的OVSS电压，并以侦测到的该些子像素的OVSS电压为依据通过插值法得出所述OLED显示装置的全部子像素的OVSS电压，然后根据所述OLED显 示装置的全部子像素的OVSS电压得出OVSS电压补偿查找表，最后通过OVSS电压补偿查找表对数据信号电压进行补偿，再用补偿后的数据信号电压驱动OLED显示装置进行画面显示，能够有效补偿OLED显示装置中OVSS电压的电压降，提升OLED显示装置显示亮度的均匀性。本发明还提供一种像素驱动电路，能够简单快捷的侦测OVSS电压。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED显示装置OVSS电压降的补偿方法，包括如下步骤：
    步骤S1、提供一OLED显示装置，包括：基板、设于所述基板上的呈阵列式排布的多个子像素、以及设于所述基板上的多条平行间隔排列的水平的OVSS走线，每一行子像素对应电性连接一条OVSS走线；所述多条OVSS走线中至少有一条OVSS走线为侦测走线，与侦测走线对应电性连接的一行子像素中至少有三个子像素为侦测子像素，且侦测走线的两端点及中点分别电性连接一个侦测子像素；
    所述OVSS走线用于向各个子像素输入OVSS电压，所述侦测子像素中设有用于侦测输入到侦测子像素中的OVSS电压的大小的第一像素驱动电路；
    步骤S2、获取待侦测的灰度，通过第一像素驱动电路侦测该灰度下输入到各个侦测子像素中的OVSS电压的大小，以输入到各个侦测子像素中的OVSS电压的大小为依据通过插值法得出输入到全部子像素中的OVSS电压的大小，根据所述输入到全部子像素中的OVSS电压的大小得出该灰度的OVSS电压补偿查找表；
    步骤S3、多次重复步骤S2，直至得到所述OLED显示装置的所有灰度的OVSS电压补偿查找表；
    步骤S4、获取待显示的数据信号电压，根据待显示的数据信号电压和与该待显示的数据信号电压对应的灰度的OVSS电压补偿查找表，对所述待显示的数据信号电压进行补偿，并利用补偿后的数据信号电压驱动所述OLED显示装置进行画面显示。
  2. 如权利要求1所述的OLED显示装置OVSS电压降的补偿方法，其中，所述第一像素驱动电路包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
    所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源 极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极电性连接该第一像素驱动电路所在的子像素对应的OVSS走线。
  3. 如权利要求1所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多个子像素中除侦测子像素以外的各个子像素中均设有第二像素驱动电路，所述第二像素驱动电路包括：第六薄膜晶体管、第七薄膜晶体管、第八薄膜晶体管、第二电容、以及第二有机发光二极管；
    所述第六薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第七薄膜晶体管的栅极；所述第七薄膜晶体管的漏极接入电源电压，源极电性连接第二有机发光二极管的阳极；所述第八薄膜晶体管的栅极接入侦测控制信号，源极电性连接第二有机发光二极管的阳极，漏极电性连接侦测芯片；所述第二电容的一端电性连接第七薄膜晶体管的栅极，另一端电性连接第七薄膜晶体管的漏极；所述第二有机发光二极管的阴极电性连接该第二像素驱动电路所在的子像素对应的OVSS走线。
  4. 如权利要求2所述的OLED显示装置OVSS电压降的补偿方法，其中，所述步骤S2中通过第一像素驱动电路侦测各个侦测子像素中的OVSS电压的大小的过程为：首先，所述扫描信号、第一控制信号、和侦测控制信号均提供高电位，第二控制信号提供低电位，第一、第三和第四薄膜晶体管打开，所述第五薄膜晶体管关闭，所述第一节点写入与待侦测的灰度对应的侦测数据信号电压，所述第二节点写入参考电压；接着，所述扫描信号和第一控制信号均提供低电位，侦测控制信号和第二控制信号提供高电位，所述第一和第三薄膜晶体管关闭，所述第四薄膜晶体管和第五薄膜晶体管打开，所述第二薄膜晶体管栅极与源极之间电压差值保持不变，通过侦测芯片侦测OVSS电压。
  5. 如权利要求1所述的OLED显示装置OVSS电压降的补偿方法，其中，所述基板包括：沿竖直方向依次排列的第一侦测区、第二侦测区、以及第三侦测区。
  6. 如权利要求5所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多条OVSS走线中有一条OVSS走线为侦测走线，该一条侦测走线位于所述基板的第二侦测区内。
  7. 如权利要求5所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多条OVSS走线中有三条OVSS走线为侦测走线，该三条侦测走线分别位于所述基板的第一侦测区、第二侦测区、以及第三侦测区内。
  8. 如权利要求2所述的OLED显示装置OVSS电压降的补偿方法，其中，所述步骤S4中，所述OLED显示装置进行画面显示时，所述第二控制信号控制所述第五薄膜晶体管关闭。
  9. 一种像素驱动电路，包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
    所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极接入OVSS电压。
  10. 一种OLED显示装置OVSS电压降的补偿方法，包括如下步骤：
    步骤S1、提供一OLED显示装置，包括：基板、设于所述基板上的呈阵列式排布的多个子像素、以及设于所述基板上的多条平行间隔排列的水平的OVSS走线，每一行子像素对应电性连接一条OVSS走线；所述多条OVSS走线中至少有一条OVSS走线为侦测走线，与侦测走线对应电性连接的一行子像素中至少有三个子像素为侦测子像素，且侦测走线的两端点及中点分别电性连接一个侦测子像素；
    所述OVSS走线用于向各个子像素输入OVSS电压，所述侦测子像素中设有用于侦测输入到侦测子像素中的OVSS电压的大小的第一像素驱动电路；
    步骤S2、获取待侦测的灰度，通过第一像素驱动电路侦测该灰度下输入到各个侦测子像素中的OVSS电压的大小，以输入到各个侦测子像素中的OVSS电压的大小为依据通过插值法得出输入到全部子像素中的OVSS电压的大小，根据所述输入到全部子像素中的OVSS电压的大小得出该灰度的OVSS电压补偿查找表；
    步骤S3、多次重复步骤S2，直至得到所述OLED显示装置的所有灰度的OVSS电压补偿查找表；
    步骤S4、获取待显示的数据信号电压，根据待显示的数据信号电压和与该待显示的数据信号电压对应的灰度的OVSS电压补偿查找表，对所述 待显示的数据信号电压进行补偿，并利用补偿后的数据信号电压驱动所述OLED显示装置进行画面显示；
    其中，所述第一像素驱动电路包括：第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管、第五薄膜晶体管、第一电容、以及第一有机发光二极管；
    所述第一薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第一节点；所述第二薄膜晶体管的栅极电性连接第一节点，漏极接入电源电压，源极电性连接第二节点；所述第三薄膜晶体管的栅极接入第一控制信号，源极电性连接第二节点，漏极电性连接第三节点；所述第四薄膜晶体管的栅极接入侦测控制信号，源极电性连接第三节点，漏极电性连接侦测芯片，所述第五薄膜晶体管的栅极电性连接第二控制信号，源极电性连接第一有机发光二极管的阴极，漏极电性连接第三节点；所述第一电容的一端电性连接第一节点，另一端电性连接第二薄膜晶体管的漏极；所述第一有机发光二极管的阳极电性连接第二节点，阴极电性连接该第一像素驱动电路所在的子像素对应的OVSS走线；
    其中，所述步骤S2中通过第一像素驱动电路侦测各个侦测子像素中的OVSS电压的大小的过程为：首先，所述扫描信号、第一控制信号、和侦测控制信号均提供高电位，第二控制信号提供低电位，第一、第三和第四薄膜晶体管打开，所述第五薄膜晶体管关闭，所述第一节点写入与待侦测的灰度对应的侦测数据信号电压，所述第二节点写入参考电压；接着，所述扫描信号和第一控制信号均提供低电位，侦测控制信号和第二控制信号提供高电位，所述第一和第三薄膜晶体管关闭，所述第四薄膜晶体管和第五薄膜晶体管打开，所述第二薄膜晶体管栅极与源极之间电压差值保持不变，通过侦测芯片侦测OVSS电压；
    其中，所述基板包括：沿竖直方向依次排列的第一侦测区、第二侦测区、以及第三侦测区；
    其中，所述步骤S4中，所述OLED显示装置进行画面显示时，所述第二控制信号控制所述第五薄膜晶体管关闭。
  11. 如权利要求10所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多个子像素中除侦测子像素以外的各个子像素中均设有第二像素驱动电路，所述第二像素驱动电路包括：第六薄膜晶体管、第七薄膜晶体管、第八薄膜晶体管、第二电容、以及第二有机发光二极管；
    所述第六薄膜晶体管的栅极接入扫描信号，源极接入数据信号，漏极电性连接第七薄膜晶体管的栅极；所述第七薄膜晶体管的漏极接入电源电 压，源极电性连接第二有机发光二极管的阳极；所述第八薄膜晶体管的栅极接入侦测控制信号，源极电性连接第二有机发光二极管的阳极，漏极电性连接侦测芯片；所述第二电容的一端电性连接第七薄膜晶体管的栅极，另一端电性连接第七薄膜晶体管的漏极；所述第二有机发光二极管的阴极电性连接该第二像素驱动电路所在的子像素对应的OVSS走线。
  12. 如权利要求10所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多条OVSS走线中有一条OVSS走线为侦测走线，该一条侦测走线位于所述基板的第二侦测区内。
  13. 如权利要求10所述的OLED显示装置OVSS电压降的补偿方法，其中，所述多条OVSS走线中有三条OVSS走线为侦测走线，该三条侦测走线分别位于所述基板的第一侦测区、第二侦测区、以及第三侦测区内。
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