WO2018211355A1

WO2018211355A1 - Display device and method for manufacturing same

Info

Publication number: WO2018211355A1
Application number: PCT/IB2018/053169
Authority: WO
Inventors: 永田貴章; 作石達哉; 横山浩平; 神保安弘; 中野賢; 山下晃央
Original assignee: 株式会社半導体エネルギー研究所
Priority date: 2017-05-19
Filing date: 2018-05-08
Publication date: 2018-11-22
Also published as: JPWO2018211355A1

Abstract

Provided is a low-cost display device. On a first substrate, a transistor and a first conductive layer are formed, and a first insulating layer is formed so as to have a region overlapping the transistor and the first conductive layer. Next, on the first insulating layer, a first opening part reaching either a source or a drain of the transistor and a second opening part reaching the first conductive layer are formed, and a second conductive layer and a third conductive layer are respectively formed in the first opening part and the second opening part. Subsequently, a light-emitting layer having a region overlapping the second conductive layer and an organic layer having a region overlapping the third conductive layer are formed in the same step, and the surface, on which the transistor is formed, of the first substrate and a second substrate are bonded by using an adhesive layer. Next, the second substrate, the adhesive layer, and the organic layer provided in the region overlapping the third conductive layer are separated, and an external input terminal is formed so as to be electrically connected to the third conductive layer.

Description

Display device and manufacturing method thereof

One embodiment of the present invention relates to a display device and a manufacturing method thereof.

Note that one embodiment of the present invention is not limited to the above technical field. Technical fields of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), and a driving method thereof. As an example, a method for producing them can be given.

Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor, a semiconductor circuit, an arithmetic device, a memory device, or the like is one embodiment of a semiconductor device. An imaging device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like) and an electronic device may include a semiconductor device.

A display device to which an organic EL (Electro Luminescence) element is applied and a display device to which a liquid crystal element is applied are known. In addition, a light-emitting device including a light-emitting element such as a light-emitting diode (LED: Light Emitting Diode), an electronic paper that performs display by an electrophoresis method, and the like can be given as examples of the display device.

The basic structure of the organic EL element is such that a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. Light emission can be obtained from the light-emitting organic compound by applying a voltage to this element. A display device to which such an organic EL element is applied can realize a thin, lightweight, high-contrast display device with low power consumption. For example, Patent Document 1 describes an example of a display device using an organic EL element.

A display device having an organic EL element can be manufactured by forming an organic EL element or the like on a manufacturing substrate and then sealing the sealing substrate together. In Patent Document 2, after forming an organic EL element on a manufacturing substrate, a spacer is formed on the outer peripheral side of the organic EL element, and a sealing resin is applied to a portion surrounded by the spacer to thereby form a sealing substrate. to paste together. The display device manufactured by this method has a dam fill structure in which the spacer is a dam material and the sealing resin is a fill material.

JP 2002-324673 A WO2014 / 181515

When the structure of a display element having an organic EL element is a dam-fill structure, for example, a manufacturing process of a display device is complicated as compared with a case where sealing is performed without providing a dam material.

An object of one embodiment of the present invention is to simplify a method for manufacturing a display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with low cost and high productivity. Another object of one embodiment of the present invention is to provide a method for manufacturing a large display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a lightweight display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a thin display device. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with excellent impact resistance. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with reduced power consumption. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with high operation speed. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device with high reliability. Another object of one embodiment of the present invention is to provide a method for manufacturing a display device capable of displaying a high-quality image. Another object of one embodiment of the present invention is to provide a novel method for manufacturing a display device.

Another object of one embodiment of the present invention is to provide a low-cost display device. Another object of one embodiment of the present invention is to provide a large display device. Another object of one embodiment of the present invention is to provide a lightweight display device. Another object of one embodiment of the present invention is to provide a thin display device. Another object of one embodiment of the present invention is to provide a display device with excellent impact resistance. Another object of one embodiment of the present invention is to provide a display device with reduced power consumption. Another object of one embodiment of the present invention is to provide a display device with high operation speed. Another object of one embodiment of the present invention is to provide a highly reliable display device. Another object of one embodiment of the present invention is to provide a display device capable of displaying a high-quality image. Another object of one embodiment of the present invention is to provide a novel display device.

Note that the description of these problems does not disturb the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Issues other than these can be extracted from the description, drawings, and claims.

One embodiment of the present invention includes a first substrate, a second substrate, a light-emitting element, an adhesive layer, and an organic layer. The light-emitting element, the adhesive layer, and the organic layer include: The organic layer is provided between the first substrate and the second substrate, the organic layer has a region in contact with the adhesive layer, the first region where the light-emitting element is provided over the first substrate, and the second substrate A light-emitting element having a light-emitting layer, a first conductive layer, and a second conductive layer, and the organic layer is made of the same material as that of the light-emitting layer. And a display device provided between the first region and the second region.

Alternatively, in the above aspect, the adhesive layer may be provided in contact with the second region, and the organic layer may be provided in contact with a boundary portion between the adhesive layer and the second region.

Or in the said aspect, an organic layer may be provided in the area | region 0.1 mm away toward the direction perpendicular | vertical to a boundary part and moving away from a 2nd area | region.

Or in the said aspect, it has an external input terminal and an external input terminal may be provided in a 2nd area | region.

Alternatively, in the above embodiment, a transistor may be provided, the transistor may be provided in the first region, and the first conductive layer may be electrically connected to one of a source and a drain of the transistor.

Alternatively, in the above aspect, the adhesive layer may have a curable adhesive.

Alternatively, in the above aspect, a colored layer may be provided in the first region.

Alternatively, in the above embodiment, the third conductive layer includes the third conductive layer, the third conductive layer includes a region in contact with the first light-emitting layer, and the third conductive layer is formed using the same material as the second conductive layer. You may have.

Alternatively, in the above embodiment, the first conductive layer may have a function as a pixel electrode of the light-emitting element, and the second conductive layer may have a function as a common electrode of the light-emitting element.

Alternatively, according to one embodiment of the present invention, the first substrate includes a step of forming a transistor and a first conductive layer over the first substrate, and a region overlapping with the transistor and the first conductive layer. Forming an insulating layer; forming a first opening reaching one of a source or a drain of the transistor and a second opening reaching the first conductive layer in the first insulating layer; Forming a second conductive layer in the first opening, forming a third conductive layer in the second opening, and forming a light emitting layer so as to have a region overlapping with the second conductive layer. The step of forming the organic layer so as to have a region overlapping with the third conductive layer, the surface of the first substrate on which the transistor is formed, and the second substrate are bonded together using an adhesive layer. A second substrate, an adhesive layer, provided in a region overlapping with the step and the third conductive layer, And separating the organic layer and so as to be connected the third conductive layer and electrically, a method for manufacturing a display device comprising the steps of: forming an external input terminal.

Alternatively, in the above embodiment, the second substrate or the adhesive layer provided in a region overlapping with the third conductive layer after making a cut in a portion of the second substrate overlapping with the first conductive layer and the organic layer And the organic layer may be separated.

Alternatively, in the above embodiment, the surface of the first substrate on which the transistor is formed may be bonded to the second substrate using an adhesive layer having a curable adhesive.

Alternatively, in the above embodiment, after a colored layer is formed over the second substrate, the surface of the first substrate on which the transistor is formed and the surface of the second substrate on which the colored layer is formed , May be pasted together.

According to one embodiment of the present invention, a method for manufacturing a display device can be simplified. Alternatively, according to one embodiment of the present invention, a method for manufacturing a display device with low cost and high productivity can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a large display device can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a lightweight display device can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a thin display device can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a display device with excellent impact resistance can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a display device with reduced power consumption can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a display device with high operating speed can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. Alternatively, according to one embodiment of the present invention, a method for manufacturing a display device capable of displaying a high-quality image can be provided. Alternatively, according to one embodiment of the present invention, a novel method for manufacturing a display device can be provided.

Alternatively, according to one embodiment of the present invention, a low-cost display device can be provided. Alternatively, according to one embodiment of the present invention, a large display device can be provided. Alternatively, according to one embodiment of the present invention, a lightweight display device can be provided. Alternatively, according to one embodiment of the present invention, a thin display device can be provided. Alternatively, according to one embodiment of the present invention, a display device with excellent impact resistance can be provided. Alternatively, according to one embodiment of the present invention, a display device with reduced power consumption can be provided. Alternatively, according to one embodiment of the present invention, a display device with high operation speed can be provided. Alternatively, according to one embodiment of the present invention, a highly reliable display device can be provided. Alternatively, according to one embodiment of the present invention, a display device capable of displaying a high-quality image can be provided. Alternatively, according to one embodiment of the present invention, a novel display device can be provided.

Note that the description of these effects does not disturb the existence of other effects. One embodiment of the present invention need not necessarily have all of these effects. Effects other than these can be extracted from the description, drawings, and claims.

4A and 4B are a top view and a cross-sectional view illustrating a structure example of a display device. Sectional drawing which shows the structural example of a display apparatus. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Sectional drawing which shows the structural example of a display apparatus. Sectional drawing which shows the structural example of a display apparatus. Sectional drawing which shows the structural example of a display apparatus. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a display device. The perspective view which shows the structural example of a touchscreen. Sectional drawing which shows the structural example of a touchscreen. FIG. 14 illustrates an example of an electronic device. 4A and 4B illustrate a method for manufacturing a display device in Embodiment 1. The image displayed by the display apparatus in Example 1. FIG.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

In this specification and the like, the case where one embodiment of the present invention is applied to a display device is described; however, the present invention is not limited to a display device and can be applied to various semiconductor devices.

Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

Note that in each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for simplicity in some cases. Therefore, it is not necessarily limited to the scale.

In the present specification and the like, ordinal numbers such as “first” and “second” are used for avoiding confusion between components, and are not limited numerically.

In this specification and the like, the terms “film” and “layer” can be interchanged with each other. For example, the term “conductive layer” may be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” may be changed to the term “insulating layer” in some cases.

A transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like. The transistors in this specification include an IGFET (Insulated Gate Field Effect Transistor) and a thin film transistor (TFT: Thin Film Transistor).

In addition, the functions of “source” and “drain” may be switched when transistors having different polarities are employed, or when the direction of current changes during circuit operation. Therefore, in this specification, the terms “source” and “drain” can be used interchangeably.

Further, in this specification and the like, “electrically connected” includes a case of being connected through “something having an electric action”. Here, the “thing having some electric action” is not particularly limited as long as it can exchange electric signals between connection targets. For example, “things having some electric action” include electrodes, wirings, switching elements such as transistors, resistance elements, coils, capacitive elements, and other elements having various functions.

In this specification and the like, a display device has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display device is an embodiment of the output device.

In this specification and the like, the touch sensor has a function of detecting that a detection target such as a finger or a stylus touches, presses, or approaches. Moreover, you may have the function to detect the positional information. Therefore, the touch sensor is an aspect of the input device. For example, the touch sensor can be configured to have one or more sensor elements.

In this specification and the like, a substrate having a touch sensor may be referred to as a touch sensor panel or simply a touch sensor. In addition, in this specification and the like, a touch sensor panel substrate, for example, an FPC or TCP connector attached, or a substrate on which an IC is mounted by a COG method, etc. is referred to as a touch sensor panel module, a touch sensor. It may be called a module, a sensor module, or simply a touch sensor.

Note that in this specification and the like, a touch panel that is one embodiment of a display device has a function of displaying (outputting) an image or the like on a display surface, and a detection target such as a finger or a stylus touches, presses, or approaches the display surface. And a function as a touch sensor for detecting the above. Accordingly, the touch panel is an embodiment of an input / output device.

The touch panel can be configured to include a display device and a touch sensor panel. Alternatively, the display device can have a function as a touch sensor inside or on the surface thereof.

(Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention and a method for manufacturing the display device will be described with reference to drawings.

In the method for manufacturing a display device of one embodiment of the present invention, after formation of a transistor, a display element, and the like over a manufacturing substrate, an adhesive layer is applied to the entire surface of the manufacturing substrate where the transistor, the display element, and the like are formed, A sealing substrate is attached. That is, the size of the sealing substrate can be made equal to the size of the manufacturing substrate. Next, a part of the sealing substrate and a part of the adhesive layer are separated by making a cut in the sealing substrate. Thereafter, an external input terminal such as an FPC is formed in the separated portion.

In the above manufacturing method, an adhesive layer is applied to the entire surface of the manufacturing substrate. Therefore, the manufacturing process of the display device can be simplified as compared with a case where an adhesive layer is applied to a part of the manufacturing substrate as a dam fill structure or the like. Further, in the case where an adhesive layer is applied to part of a manufacturing substrate, a screen mask or the like used for application of the adhesive layer needs to be changed when the arrangement of various elements such as a transistor on the manufacturing substrate is changed. On the other hand, when the adhesive layer is applied to the entire surface of the manufacturing substrate, if the size of the manufacturing substrate is the same, even if the arrangement of various elements such as transistors on the manufacturing substrate changes, the screen mask or the like does not change. Good. Therefore, in the case of manufacturing a large display device in particular, it is possible to provide a method for manufacturing a display device with low cost and high productivity.

<Configuration Example 1 of Display Device>
FIG. 1A is a top view illustrating a structure example of a display device 10 which is a display device of one embodiment of the present invention. As shown in FIG. 1A, the display device 10 includes a display area 11 and a driver circuit area 12. The display area 11 is provided with pixels, and the drive circuit area 12 is provided with circuits necessary for driving the display device 10 such as a gate driver and a source driver. Further, the display device 10 is provided with an external input terminal for transmitting an external signal or potential to the drive circuit region 12. FIG. 1A shows an example in which an FPC 13 is provided as an external input terminal. In the following drawings, an example in which an FPC is provided as an external input terminal is shown.

FIG. 1B is a cross-sectional view illustrating a configuration example of the display device 10. FIG. 1B shows a top emission structure to which a color filter method is applied as a configuration example of the display device 10. FIG. 1B corresponds to a cross-sectional view taken along dashed-dotted line A1-A2 in FIG.

The display device 10 includes a substrate 201, an insulating layer 205, a transistor 301, a transistor 302, a transistor 303, a capacitor 305, an insulating layer 312, an insulating layer 313, an insulating layer 314, an insulating layer 315, a light emitting element 304, an organic layer 322a, and a conductive layer. A layer 323a, a connection region 306, an adhesive layer 317, a coloring layer 325, a light-blocking layer 326, a substrate 211, and an insulating layer 215 are included. The transistor 301 is provided in the driver circuit region 12, and the transistor 302, the transistor 303, the capacitor 305, and the light-emitting element 304 are provided in the display region 11. The colored layer means a so-called color filter.

In the display device 10 having the structure illustrated in FIG. 1B, the insulating layer 205 is provided over the substrate 201, and the transistor 301, the transistor 302, the transistor 303, and the capacitor 305 are provided over the insulating layer 205.

The transistor 301 includes a conductive layer 411, an insulating layer 311, a semiconductor layer 412, a conductive layer 413, and a conductive layer 414. The transistor 302 includes a conductive layer 421, an insulating layer 311, a semiconductor layer 422, a conductive layer 423, and a conductive layer 424. The transistor 303 includes a conductive layer 431, an insulating layer 311, a semiconductor layer 432, a conductive layer 433, and a conductive layer 434. The capacitor 305 includes a conductive layer 424, an insulating layer 311, and a conductive layer 451.

The conductive layer 411 functions as the gate of the transistor 301. The conductive layer 421 functions as the gate of the transistor 302. The conductive layer 431 functions as the gate of the transistor 303. The conductive layer 451 functions as one electrode of the capacitor 305. The insulating layer 311 functions as a gate insulating layer of the transistor 301, the transistor 302, and the transistor 303 and a dielectric layer of the capacitor 305.

The conductive layer 413 functions as one of a source and a drain of the transistor 301. The conductive layer 414 functions as the other of the source and the drain of the transistor 301. The conductive layer 423 functions as one of a source and a drain of the transistor 302. The conductive layer 424 functions as the other of the source and the drain of the transistor 302 and the other electrode of the capacitor 305. The conductive layer 433 functions as one of a source and a drain of the transistor 303. The conductive layer 434 functions as the other of the source and the drain of the transistor 303.

The conductive layer 411 and the semiconductor layer 412, the conductive layer 421 and the semiconductor layer 422, the conductive layer 431 and the semiconductor layer 432, and the conductive layer 451 and the conductive layer 424 each have a region overlapping with the insulating layer 311 interposed therebetween.

The

transistors

301, 302, and 303 may have different structures. For example, the structure of the transistor 301 included in the driver circuit region 12 may be different from the structures of the transistor 302 and the transistor 303 included in the display region 11.

An insulating layer 312 is provided so as to cover the transistor 301, the transistor 302, the transistor 303, and the capacitor 305, and an insulating layer 313 is provided over the insulating layer 312. Note that one of the insulating layer 312 and the insulating layer 313 may be omitted. In addition to the insulating layer 312 and the insulating layer 313, an insulating layer may be further formed.

An insulating layer 314 is provided over the insulating layer 313. Although details will be described later, the insulating layer 314 functions as an interlayer insulating layer that separates the layer in which the transistor 301, the transistor 302, the transistor 303, and the capacitor 305 are provided from the layer in which the light-emitting element 304 is provided. Have As shown in FIG. 1B, the insulating layer 314 is preferably planarized, but may not be planarized.

Over the insulating layer 314, the light-emitting element 304, the insulating layer 315, the organic layer 322a, and the conductive layer 323a are provided. Here, it is preferable that at least one of the insulating layer 312, the insulating layer 313, and the insulating layer 314 be formed using a material in which impurities such as water or hydrogen hardly diffuse. Accordingly, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, and the reliability of the display device 10 can be improved.

The light-emitting element 304 includes a conductive layer 321, a light-emitting layer 322, and a conductive layer 323. In addition, the light-emitting element 304 may include an optical adjustment layer 324 as illustrated in FIG. The light emitting element 304 emits light to the substrate 211 side. The optical adjustment layer means a so-called microcavity.

By providing the transistor, the capacitor, and the like and the light-emitting element 304 in layers, the aperture ratio of the display region 11 can be increased as compared with the case where the light-emitting element 304 is provided in the same layer as the transistor, the capacitor, and the like.

One of the

conductive layers

321 and 323 has a function as an anode, and the other has a function as a cathode. When a voltage higher than the threshold voltage of the light-emitting element 304 is applied between the conductive layer 321 and the conductive layer 323, holes are injected into the light-emitting layer 322 from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the light emitting layer 322, and the light emitting material contained in the light emitting layer 322 emits light.

The conductive layer 321 is electrically connected to the conductive layer 434. These are connected directly or via another conductive layer. The conductive layer 321 functions as a pixel electrode, and one conductive layer 321 is provided for each light-emitting element 304. Two adjacent conductive layers 321 are electrically insulated by an insulating layer 315. Note that in FIG. 1B, only one light-emitting element 304 is illustrated.

The light emitting layer 322 is a layer containing a light emitting material. As the light-emitting element 304, an organic EL element using an organic compound as a light-emitting material can be preferably used. Note that a light emitting diode (LED), an organic EL element, an inorganic EL element, or the like may be used as the light emitting element 304. Note that in the case where an inorganic EL element is used as the light-emitting element 304, the organic layer 322a is an inorganic layer.

The light-emitting layer 322 includes at least one light-emitting layer.

The conductive layer 323 functions as a common electrode. That is, one conductive layer 323 is provided in common for the plurality of light-emitting elements 304. A constant potential can be supplied to the conductive layer 323.

Note that one embodiment of the present invention is not limited to the color filter method, and a color separation method, a color conversion method, a quantum dot method, or the like may be applied.

An insulating layer 215, a coloring layer 325, and a light shielding layer 326 are provided over the substrate 211, and the substrate 201 and the substrate 211 are attached to each other with an adhesive layer 317. That is, the display device 10 having the structure illustrated in FIG. 1B includes a transistor 301, a transistor 302, a transistor 303, a capacitor 305, a light-emitting element 304, an organic layer 322a, a conductive layer 323a, and the like between the substrate 201 and the substrate 211. Is provided. Note that details of the organic layer 322a and the conductive layer 323a will be described later.

As the insulating layer 205 and the insulating layer 215, it is preferable to use an insulating film which does not easily transmit impurities, that is, has a high barrier property. In particular, as the insulating layer 205 and the insulating layer 215, it is preferable to use an insulating film with high moisture resistance, that is, with a low water vapor transmission amount. Thereby, it is possible to prevent impurities such as water from entering various elements provided between the insulating layer 205 and the insulating layer 215 and to improve the reliability of the display device 10.

Examples of the highly moisture-proof insulating film include inorganic insulating films such as a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used. Two or more of the above insulating films may be stacked. For example, a two-layer structure of a silicon nitride film and a silicon oxide film can be used.

For example, the moisture permeation amount of the highly moisture-proof insulating film is 1 × 10 ⁻⁵ [g / (m ² · day)] or less, preferably 1 × 10 ⁻⁶ [g / (m ² · day)] or less, More preferably, it is 1 × 10 ⁻⁷ [g / (m ² · day)] or less, and further preferably 1 × 10 ⁻⁸ [g / (m ² · day)] or less.

For the adhesive layer 317, various curable adhesives such as an ultraviolet curable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. By using a curable adhesive as the adhesive layer 317, it is possible to suppress peeling of each layer or the like included in the light-emitting element 304. Further, leakage of the adhesive layer 317 to the outside of the display device 10 can be suppressed. As described above, the reliability of the display device 10 can be improved. Note that an adhesive sheet or the like may be used as the adhesive layer 317.

The adhesive layer 317 may contain a desiccant. For example, a substance that adsorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (calcium oxide, barium oxide, or the like) can be used. Alternatively, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. It is preferable that a desiccant is contained because impurities such as moisture can be prevented from entering the functional element and the reliability of the display device 10 is improved.

In addition, when the adhesive layer 317 includes a filler having a high refractive index or a light scattering member, light extraction efficiency from the light emitting element can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium, or the like can be used.

The colored layer 325 is provided so that the light-emitting region of the light-emitting element 304, that is, the conductive layer 321, the light-emitting layer 322, and the conductive layer 323 are all overlapped with the region where the light-emitting layer 322 emits light. Light emitted from the light-emitting layer 322 is extracted to the substrate 211 side through the colored layer 325. That is, the display device 10 illustrated in FIG. 1B has a top emission structure.

In the color filter display device as illustrated in FIG. 1B, the light-emitting layer 322 can be a light-emitting layer that emits white light. The colored layer 325 is a colored layer that transmits light in a specific wavelength band. For example, a color filter that transmits light in a wavelength band such as red, green, blue, or yellow can be used. As a material that can be used for the colored layer 325, a metal material, a resin material, a resin material containing a pigment or a dye, or the like can be given. With the structure of the display device 10, light of each color such as red, green, blue, or yellow can be extracted even when the light-emitting layer 322 is provided in common for the plurality of light-emitting elements 304. Accordingly, the definition of the pixel including the light emitting element 304 can be increased.

In addition, by providing the light-emitting element 304 with the optical adjustment layer 324 and using a conductive film that reflects visible light as the conductive layer 321 and a conductive film that transmits visible light as the conductive layer 323, the conductive layer 321 and the conductive layer 323 are formed. The optical distance between them can be adjusted according to the color of light to be extracted, and light can be extracted efficiently. As a result, the color gamut that can be displayed by the display device 10 can be expanded, and the power consumption can be further reduced.

The colored layer 325 is provided between the adjacent light shielding layers 326. The light-blocking layer 326 blocks light from the light-emitting elements 304 provided in adjacent pixels and suppresses color mixing between the adjacent light-emitting elements 304. Here, light leakage can be suppressed by providing the end portion of the colored layer 325 so as to overlap the light shielding layer 326. As the light-blocking layer 326, a material that blocks light from the light-emitting element 304 can be used. For example, a black matrix can be formed using a metal material or a resin material containing a pigment or a dye. Note that the light shielding layer 326 is preferably provided in a region other than the display region 11 such as the drive circuit region 12 because unintended light leakage due to guided light or the like can be suppressed.

The display device 10 may have an overcoat (not shown). The overcoat can prevent diffusion of impurities and the like contained in the colored layer 325 to the light emitting element 304. The overcoat is made of a material that transmits light from the light emitting element 304. For example, an inorganic insulating film such as a silicon nitride film or a silicon oxide film, or an organic insulating film such as an acrylic film or a polyimide film can be used, and a stacked structure of an organic insulating film and an inorganic insulating film may be used.

The connection region 306 includes a conductive layer 307 and a conductive layer 355. The conductive layer 307 and the conductive layer 355 are electrically connected. The conductive layer 307 can be formed using the same material and step as the source and drain of the transistor. The conductive layer 355 can be formed using the same material and the same process as the conductive layer 321. The conductive layer 355 is electrically connected to the FPC 13 that transmits a signal and a potential from the outside to the drive circuit region 12 through a connection body 319.

As the connection body 319, various anisotropic conductive films (ACF: Anisotropic Conductive Film), anisotropic conductive pastes (ACP: Anisotropic Conductive Paste), and the like can be used.

The conductive layer 355, the connection body 319, and the FPC 13 are provided in a region over the substrate 201 that does not overlap with the substrate 211. A region that does not overlap the substrate 211 in the substrate 201 is referred to as a region 400.

The organic layer 322a and the conductive layer 323a are provided so as to be in contact with a boundary portion between the region 400 and the adhesive layer 317. Further, as described above, the organic layer 322 a and the conductive layer 323 a are provided so as to overlap with the substrate 211. Although details will be described later, the organic layer 322a is formed using the same material and the same process as the light-emitting layer 322, and the conductive layer 323a is formed using the same material and the same process as the conductive layer 323.

Note that the organic layer 322a can be provided from a boundary portion between the region 400 and the adhesive layer 317 to a region that is 0.1 mm away from the boundary portion in a direction perpendicular to the boundary portion and away from the region 400. . That is, the value x shown in FIG. 1B can be set to 0.1 mm. Note that the value of x may be less than 0.1 mm or greater than 0.1 mm. For example, the value of x may be 1 μm or 10 μm. For example, the value of x may be 0.2 mm, 0.5 mm, or 1 mm. The value of x is preferably 2 mm or less.

As shown in FIG. 1B, the conductive layer 323a can be provided so as to cover the organic layer 322a. Further, the conductive layer 323a can be provided so that an end portion of the organic layer 322a is exposed. In addition, as illustrated in FIG. 2, the conductive layer 323a may be omitted.

Next, each component of the display device 10 illustrated in FIG. 1B will be described.

〔substrate〕
A material having a flat surface can be used for the substrate 201 and the substrate 211. The substrate 201 and the substrate 211 can be formed using a material that transmits visible light. For example, materials such as glass, quartz, ceramic, sapphire, and organic resin can be used. Note that the substrate 201 may not be formed using a material that transmits visible light.

Alternatively, thin substrates may be used as the substrate 201 and the substrate 211. Thereby, weight reduction and thickness reduction of the display apparatus 10 can be achieved.

Further, as the substrate 201 and the substrate 211, a material having high toughness may be used. Thereby, it is possible to realize a display device that is excellent in impact resistance and is not easily damaged. For example, by using a resin substrate, or a thin metal substrate or alloy substrate, a display device that is lighter and less likely to be damaged can be realized as compared with the case of using a glass substrate.

Metal materials and alloy materials are preferable because they have high thermal conductivity and can easily conduct heat to the entire substrate, which can suppress a local temperature increase of the display device 10. The thickness of the substrate using a metal material or an alloy material is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less.

The material constituting the metal substrate or the alloy substrate is not particularly limited. For example, aluminum, copper, nickel, or an alloy of a metal such as an aluminum alloy or stainless steel can be preferably used. Examples of the material constituting the semiconductor substrate include silicon.

In addition, when a material having a high thermal emissivity is used for the substrate 201 and the substrate 211, it is possible to suppress an increase in the surface temperature of the display panel, and it is possible to suppress destruction of the display device 10 and a decrease in reliability. For example, the substrate 201 and the substrate 211 may have a stacked structure of a metal substrate and a layer having a high thermal emissivity (for example, a metal oxide or a ceramic material can be used).

[Transistor]
The structure of the transistor included in the display device 10 is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor may be used. Further, a top-gate or bottom-gate transistor structure may be employed. Alternatively, gate electrodes may be provided above and below the channel.

There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.

There is no particular limitation on the semiconductor material used for the transistor, and for example, a Group 14 element, a compound semiconductor, or a metal oxide can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, a metal oxide containing indium, or the like can be used.

In this specification and the like, a metal oxide is a metal oxide in a broad expression. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), and oxide semiconductors (also referred to as oxide semiconductors or simply OS). For example, in the case where a metal oxide is used for an active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide has at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor, or OS for short. In the case of describing as an OS FET, it can be said to be a transistor including a metal oxide or an oxide semiconductor.

In addition, in this specification and the like, metal oxides containing nitrogen may be collectively referred to as metal oxides. In addition, a metal oxide containing nitrogen may be referred to as a metal oxynitride.

Further, in this specification and the like, there are cases where they are described as CAAC (c-axis aligned crystal) and CAC (Cloud-aligned Composite). Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or a material structure.

In this specification and the like, a CAC-OS or a CAC-metal oxide has a conductive function in part of a material and an insulating function in part of the material, and the whole material is a semiconductor. It has the function of. Note that in the case where CAC-OS or CAC-metal oxide is used for an active layer of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is an electron serving as carriers. It is a function that does not flow. A function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

In this specification and the like, CAC-OS or CAC-metal oxide includes a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

In CAC-OS or CAC-metal oxide, the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.

Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel region of a transistor, high current driving capability, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.

That is, CAC-OS or CAC-metal oxide can also be called a matrix composite material (metal matrix composite) or a metal matrix composite material (metal matrix composite).

In particular, a metal oxide is preferably used for a semiconductor in which a channel of a transistor is formed. In particular, it is preferable to use a metal oxide having a larger band gap than silicon. For example, the energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more. A semiconductor material having a wide band gap and a low carrier density, such as a metal oxide, is preferable because current in an off state of the transistor can be reduced.

For example, the metal oxide preferably contains at least indium (In) or zinc (Zn). More preferably, an oxide represented by an In-M-Zn oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, Hf, or Nd) is included.

[Insulating layer]
An organic insulating material or an inorganic insulating material can be used for the insulating layer included in the display device 10. Examples of the resin include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, and phenol resin. Examples of inorganic insulating films include silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide Examples thereof include a film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film.

[Conductive layer]
Each of the conductive layers included in the display device 10 has a single-layer structure of a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as a main component. Alternatively, a stacked structure can be used. Or indium oxide, ITO, indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, ZnO, ZnO added with gallium, or silicon. A light-transmitting conductive material such as indium tin oxide may be used. Alternatively, a semiconductor such as polycrystalline silicon or an oxide semiconductor, or a silicide such as nickel silicide, which has been reduced in resistance by containing an impurity element or the like, may be used. Alternatively, a film containing graphene can be used. The film containing graphene can be formed by, for example, reducing a film containing graphene oxide. Alternatively, a semiconductor such as an oxide semiconductor containing an impurity element may be used. Alternatively, a conductive paste such as silver, carbon, or copper, or a conductive polymer such as polythiophene may be used. The conductive paste is preferable because it is inexpensive. The conductive polymer is preferable because it is easy to apply.

<Example 1 of Manufacturing Method of Display Device>
Next, an example of a method for manufacturing the display device 10 having the structure illustrated in FIGS. 1A and 1B will be described with reference to FIGS.

Note that a thin film (an insulating film, a semiconductor film, a conductive film, or the like) included in the display device is formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, or pulsed laser deposition (PLD: Pulsed Laser Deposition). ) Method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like. The CVD method may be a plasma enhanced chemical vapor deposition (PECVD) method or a thermal CVD method. As an example of the thermal CVD method, a metal organic chemical vapor deposition (MOCVD) method may be used.

Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices are spin coating, dip, spray coating, ink jet, dispensing, screen printing, offset printing, slit coating, roll coating, curtain coating, knife coating, etc. It can be formed by a method.

When a thin film included in the display device is processed, the thin film can be processed using a lithography method or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like. As a photolithography method, a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. After forming a photosensitive thin film, exposure and development are performed. And a method for processing the thin film into a desired shape.

When light is used in the lithography method, for example, light used for exposure can be i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or light in which these are mixed. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Further, exposure may be performed by an immersion exposure technique. Further, extreme ultraviolet light (EUV: Extreme-violet) or X-rays may be used as light used for exposure. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.

For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.

In manufacturing the display device 10, first, the insulating layer 205 is formed over the substrate 201 (FIG. 3A). As described above, the insulating layer 205 preferably has a high barrier property. In the case where an inorganic insulating film is used as the insulating layer 205, it is preferable to form the insulating layer 205 at a high temperature because a denser and higher barrier property is obtained as the deposition temperature is higher. For example, the temperature during film formation is preferably 100 ° C. or higher, and more preferably 250 ° C. or higher.

Next, the transistor 301, the transistor 302, the transistor 303, and the capacitor 305 are formed over the insulating layer 205 (FIG. 3A).

Specifically, first, the conductive layer 411, the conductive layer 421, the conductive layer 431, and the conductive layer 451 are formed over the insulating layer 205. The conductive layer 411, the conductive layer 421, the conductive layer 431, and the conductive layer 451 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

Subsequently, an insulating layer 311 is formed. As the insulating layer 311, an insulating film that can be used for the insulating layer 205 can be used.

Subsequently, a semiconductor layer 412, a semiconductor layer 422, and a semiconductor layer 432 are formed. The semiconductor layer 412, the semiconductor layer 422, and the semiconductor layer 432 can be formed by forming a semiconductor film, forming a resist mask, etching the semiconductor film, and then removing the resist mask. A metal oxide can be used for the semiconductor film.

The metal oxide film can be formed using one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film. However, in the case of obtaining a transistor with high field effect mobility, the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, and 5% or more and 30% or less. Is more preferably 7% or more and 15% or less.

The metal oxide film can be formed by a sputtering method. In addition, a PLD method, a PECVD method, a thermal CVD method, an ALD method, a vacuum evaporation method, or the like may be used.

Next, a conductive layer 307, a conductive layer 413, a conductive layer 414, a conductive layer 423, a conductive layer 424, a conductive layer 433, and a conductive layer 434 are formed. The conductive layer 307, the conductive layer 413, the conductive layer 414, the conductive layer 423, the conductive layer 424, the conductive layer 433, and the conductive layer 434 were formed using a conductive film, a resist mask was formed, and the conductive film was etched It can be formed by removing the resist mask later. The

conductive layers

413 and 414 are each connected to the semiconductor layer 412, the

conductive layers

423 and 424 are connected to the semiconductor layer 422, and the

conductive layers

433 and 434 are connected to the semiconductor layer 432, respectively. The

Note that although not shown in FIG. 3A, when the conductive film is etched, part of the semiconductor layer 412 that is not covered with the resist mask, part of the semiconductor layer 422, and part of the semiconductor layer 432 May become thinner.

As described above, the transistor 301, the transistor 302, the transistor 303, and the capacitor 305 can be formed. At the same time, a conductive layer 307 electrically connected to the FPC 13 can be formed.

Next, an insulating layer 312 is formed to cover the transistor 301, the transistor 302, the transistor 303, and the capacitor 305. Subsequently, an insulating layer 313 is formed (FIG. 3B). The insulating layer 312 and the insulating layer 313 can be formed by a method similar to that of the insulating layer 205.

The insulating layer 312 is preferably formed in an atmosphere containing oxygen. As the insulating layer 312, for example, a silicon oxide film or an oxynitride insulating film is preferably used. Accordingly, the insulating layer 312 can be an insulating layer that easily releases a large amount of oxygen by heating. The insulating layer 313 is preferably formed using an insulating film that hardly diffuses and transmits oxygen, such as a silicon nitride film.

Heat treatment is preferably performed after the insulating layer 312 and the insulating layer 313 are formed. Accordingly, oxygen can be supplied from the insulating layer 312 to the semiconductor layer 412, the semiconductor layer 422, and the semiconductor layer 432. Accordingly, in the case where the semiconductor layer 412, the semiconductor layer 422, and the semiconductor layer 432 are metal oxide layers, oxygen vacancies formed in the metal oxide layer can be repaired and the defect level can be reduced. Thereby, the reliability of the display apparatus 10 can be improved.

Next, the insulating layer 314 is formed over the insulating layer 313 (FIG. 3B). The insulating layer 314 is a layer having a formation surface of a display element to be formed later, and thus preferably functions as a planarization layer. The planarization can be performed using, for example, a chemical mechanical polishing (CMP) method. As the insulating layer 314, an insulating film that can be used for the insulating layer 205 can be used.

Next, an opening reaching the conductive layer 307 and an opening reaching the conductive layer 434 are formed in the insulating layer 314, the insulating layer 313, and the insulating layer 312.

After that, a conductive layer 355 and a conductive layer 321 are formed (FIG. 3C). The conductive layer 355 is connected to the conductive layer 307 through an opening provided in the insulating layer 314, the insulating layer 313, and the insulating layer 312. The conductive layer 321 is connected to the conductive layer 434 through an opening provided in the insulating layer 314, the insulating layer 313, and the insulating layer 312. The conductive layer 355 and the conductive layer 321 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

Next, the optical adjustment layer 324 is formed (FIG. 3C). The optical adjustment layer 324 can be formed, for example, by forming a conductive film that transmits visible light, forming a resist mask, etching the conductive film, and then removing the resist mask. Note that in FIG. 3C, the optical adjustment layer 324 is formed so as to cover the conductive layer 321, but the optical adjustment layer 324 may be formed so that an end portion of the conductive layer 321 is exposed.

Next, an insulating layer 315 that covers an end portion of the optical adjustment layer 324 is formed (FIG. 3C). The insulating layer 315 can be formed by forming an insulating film, forming a resist mask, etching the insulating film, and then removing the resist mask. Note that an insulating film that can be used for the insulating layer 205 can be used for the insulating layer 315. In addition, when the optical adjustment layer 324 is formed so that the end portion of the conductive layer 321 is exposed, the insulating layer 315 covers the end portion of the conductive layer 321.

Next, the light-emitting layer 322 and the organic layer 322a are formed (FIG. 4A). The light-emitting layer 322 and the organic layer 322a can be formed by a method such as a vapor deposition method, a coating method, a printing method, or a discharge method. Note that the organic layer 322 a is provided so as to cover the conductive layer 355.

Next, a conductive layer 323 and a conductive layer 323a are formed (FIG. 4A). The

conductive layers

323 and 323a can be formed, for example, by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask. As described above, the conductive layer 323a can be provided so as to cover the organic layer 322a. Further, the conductive layer 323a can be provided so that an end portion of the organic layer 322a is exposed. Further, the conductive layer 323a can be omitted. FIG. 4A and the like illustrate the case where the conductive layer 323a is provided so as to cover the organic layer 322a.

Next, an insulating layer 215 is formed over the substrate 211 (FIG. 4B). As the insulating layer 215, an insulating film that can be used for the insulating layer 205 can be used.

Next, a colored layer 325 and a light-blocking layer 326 are formed over the insulating layer 215 (FIG. 4B). Note that the size of the substrate 211 can be the same as the size of the substrate 201.

Next, an adhesive layer 317 is applied to the entire surface of the substrate 201 on which the light emitting element 304 and the like are formed. The adhesive layer 317 can be formed using, for example, screen printing. Alternatively, it can be formed using an inkjet device or a dispensing device. After that, the surface of the substrate 201 on which the light-emitting element 304 and the like are formed is bonded to the surface of the substrate 211 on which the colored layer 325 and the like are formed (FIG. 4C). In this case, the substrate 201 can be referred to as a manufacturing substrate, and the substrate 211 can be referred to as a sealing substrate.

Next, a dividing line 401 is formed on the substrate 211 in a portion overlapping with the organic layer 322a (FIG. 5A). For example, the cutting line 401 can be formed by cutting the substrate 211 by pressing a sharp blade at the tip against the substrate 211. Accordingly, the substrate 211, the organic layer 322a, the conductive layer 323a, and the like outside the dividing line 401 (A1 side) are separated from the display device 10 and the conductive layer 355 can be exposed (FIG. 5B). Further, the organic layer 322a and the conductive layer 323a on the inner side (A2 side) from the dividing line 401 remain without being separated.

In the case where the organic layer 322 a is not provided, a region where the adhesive layer 317 and the insulating layer 314 are in contact with each other is formed outside the dividing line 401. In this region, the adhesive layer 317 and the insulating layer 314 are in close contact with each other, which makes it difficult to separate them. By providing the organic layer 322a, a region where the adhesive layer 317 and the insulating layer 314 are in contact with each other can be eliminated, so that the substrate 211 outside the dividing line 401 can be easily separated.

Note that part of the organic layer 322 a may remain on the conductive layer 355 when the substrate 211 or the like is separated. In this case, the organic layer 322a over the conductive layer 355 can be completely removed by performing acetone cleaning or the like. At this time, the organic layer 322a inside the dividing line 401 may also be removed. Note that even when part of the organic layer 322a remains over the conductive layer 355, the organic layer 322a is not necessarily removed.

Further, a cut may be made by pressing a sharp blade at the tip of the interface between the organic layer 322a and the insulating layer 314 (FIG. 6). This facilitates separation of the substrate 211, the organic layer 322a, the conductive layer 323a, and the like outside the dividing line 401. Note that the cut at the interface between the organic layer 322a and the insulating layer 314 may be made at the same time as the formation of the dividing line 401, or before the forming of the dividing line 401, or after the formation of the dividing line 401. Also good.

Next, the connection body 319 is formed so as to be connected to the conductive layer 355, and the FPC 13 is formed so as to be connected to the connection body 319. The above is an example of a method for manufacturing the display device 10 having the structure illustrated in FIGS.

In the method for manufacturing the display device 10 illustrated in FIGS. 3 to 6, an adhesive layer 317 is applied to the entire surface of the substrate 201. Therefore, the manufacturing process of the display device can be simplified as compared with the case where the adhesive layer 317 is applied to part of the substrate 201 as a dam fill structure or the like. Further, in the case where the adhesive layer 317 is applied to part of the substrate 201, when the arrangement of various elements such as a transistor on the substrate 201 is changed, it is necessary to change a screen mask used when the adhesive layer 317 is applied. On the other hand, when the adhesive layer 317 is applied to the entire surface of the substrate 201, if the size of the substrate 201 is the same, even if the arrangement of various elements such as transistors on the substrate 201 is changed, the screen mask is not changed. It's okay. Therefore, in the case of manufacturing a large display device in particular, it is possible to provide a method for manufacturing a display device with low cost and high productivity.

<Configuration Example 2 of Display Device>
In the display device 10 having the structure illustrated in FIG. 7A, the transistor 301 includes the conductive layer 415, the transistor 302 includes the conductive layer 425, and the transistor 303 includes the conductive layer 435. The configuration of the display device 10 shown in FIG. The conductive layer 415, the conductive layer 425, and the conductive layer 435 are provided so as to be in contact with the insulating layer 313. As the conductive layer 415, the conductive layer 425, and the conductive layer 435, a conductive film that can be used for the conductive layer 411, the conductive layer 421, and the conductive layer 431 can be used.

The conductive layer 415, the conductive layer 425, and the conductive layer 435 each function as a back gate of the transistor. In other words, the transistor 301, the transistor 302, and the transistor 303 have a structure in which a semiconductor layer is sandwiched between two gates.

With the structure of the transistor 301, the transistor 302, and the transistor 303 illustrated in FIG. 7A, the field-effect mobility of the transistor can be increased and the on-state current can be increased. As a result, the operation speed of the display device 10 can be increased. Further, even when the display device 10 is increased in size or definition and the number of wirings is increased, signal delay in each wiring can be reduced, and variation in display luminance between pixels can be reduced. Thereby, the display apparatus 10 can display a high quality image.

<Configuration Example 3 of Display Device>
The display device 10 having the structure illustrated in FIG. 7B is different from the structure of the display device 10 illustrated in FIG. 1B in that the coloring layer 325 and the light-blocking layer 326 are not provided. In the display device 10 having the structure illustrated in FIG. 7B, the light-emitting layer 322 is formed separately for each light-emitting element 304. The light-emitting layer 322 can be a light-emitting layer that emits light in a wavelength band such as red, green, blue, or yellow.

In the display device 10 having the structure illustrated in FIG. 7B, light emitted from the light-emitting layer 322 is not absorbed by the colored layer, so that extraction efficiency of light emitted from the light-emitting layer 322 can be increased. Thereby, the display apparatus 10 can display a high-intensity image, and the power consumption of the display apparatus 10 can be reduced.

Note that the organic layer 322a can be formed using the same material and the same step as any of the light-emitting layers 322. In the display device 10 having the structure illustrated in FIG. 7B, the light-blocking layer 326 may be provided.

<Configuration Example 4 of Display Device>
The display device 10 having the configuration illustrated in FIG. 8A is different from the configuration of the display device 10 illustrated in FIG. 1B in that it has a bottom emission structure. In the display device 10 having the structure illustrated in FIG. 8A, the coloring layer 325 is provided so as to be in contact with the insulating layer 313, that is, below the light-emitting element 304. Light emitted from the light-emitting layer 322 is extracted to the substrate 201 side through the colored layer 325.

In the display device 10 having the structure illustrated in FIG. 8A, a conductive film that transmits visible light is preferably used as the conductive layer 321, and a conductive film that reflects visible light is preferably used as the conductive layer 323. For the substrate 201, a material that transmits visible light is preferably used. Thereby, the light emitted from the light emitting layer 322 can be extracted efficiently. Note that the substrate 211 may not be formed using a material that transmits visible light.

<Configuration Example 5 of Display Device>
The display device 10 having the structure illustrated in FIG. 8B is different from FIG. 1B in that the structures of the transistor 301, the transistor 302, the transistor 303, and the capacitor 305 are different.

In the display device 10 having the structure illustrated in FIG. 8B, the transistor 301 includes a semiconductor layer, an insulating layer 311, and a conductive layer 514. The transistor 302 includes a semiconductor layer, an insulating layer 311, and a conductive layer 524. The transistor 303 includes a semiconductor layer, an insulating layer 311, and a conductive layer 534. In addition, the capacitor 305 includes a semiconductor layer, an insulating layer 311, and a conductive layer 552. Note that the semiconductor layer included in the transistor 302 and the semiconductor layer included in the capacitor 305 are connected to each other.

As the semiconductor layer provided in the display device 10 having the structure illustrated in FIG. 8B, a semiconductor film that can be used for the semiconductor layer 412, the semiconductor layer 422, and the semiconductor layer 432 can be used.

A semiconductor layer provided in the transistor 301 includes a region 511, a region 512, and a region 513. A semiconductor layer provided in the transistor 302 includes a region 521, a region 522, and a region 523. A semiconductor layer provided in the transistor 303 includes a region 531, a region 532, and a region 533. The semiconductor layer provided in the capacitor 305 has a region 551.

The conductive layer 514 functions as the gate of the transistor 301. The conductive layer 524 functions as a gate of the transistor 302. The conductive layer 534 functions as a gate of the transistor 303. The conductive layer 552 functions as one electrode of the capacitor 305.

As the conductive layer 514, the conductive layer 524, the conductive layer 534, and the conductive layer 552, a conductive film that can be used for the conductive layer 411, the conductive layer 421, the conductive layer 431, and the conductive layer 451 can be used.

The conductive layer 514, the conductive layer 524, the conductive layer 534, and the conductive layer 552 have a region overlapping with the semiconductor layer with the insulating layer 311 interposed therebetween. In the semiconductor layer included in the transistor 301, the region 511 is provided in a region overlapping with the conductive layer 514 and functions as a channel formation region of the transistor 301. In the semiconductor layer included in the transistor 302, the region 521 is provided in a region overlapping with the conductive layer 524 and functions as a channel formation region of the transistor 302. In the semiconductor layer included in the transistor 303, the region 531 is provided in a region overlapping with the conductive layer 534 and functions as a channel formation region of the transistor 303. In the semiconductor layer included in the capacitor 305, the region 551 is provided in a region overlapping with the conductive layer 552 and functions as the other electrode of the capacitor 305.

The region 512 functions as one of the source and the drain of the transistor 301. The region 513 functions as the other of the source and the drain of the transistor 301. The region 522 functions as one of a source and a drain of the transistor 302. The region 523 functions as the other of the source and the drain of the transistor 302. The region 532 functions as one of the source and the drain of the transistor 303. The region 533 functions as the other of the source and the drain of the transistor 303.

The region 512, the region 513, the region 522, the region 523, the region 532, the region 533, and the region 551 are preferably reduced in resistance. For example, after forming the semiconductor layer, by introducing impurities such as hydrogen, boron, phosphorus, arsenic, or a rare gas into the region 512, the region 513, the region 522, the region 523, the region 532, the region 533, and the region 551, The resistance of the region can be reduced. The introduction of impurities can be performed using an ion implantation method, an ion doping method, a plasma immersion ion implantation method, or the like.

The insulating layer 312 is provided so as to be in contact with the insulating layer 311, the conductive layer 514, the conductive layer 524, the conductive layer 534, and the conductive layer 552. The insulating layer 313 is provided in contact with the insulating layer 312. The insulating layer 313, the insulating layer 312, and the insulating layer 311 include an opening reaching the region 512, an opening reaching the region 513, an opening reaching the region 522, an opening reaching the region 523, an opening reaching the region 532, and reaching the region 533. An opening is provided.

Over the insulating layer 313, a conductive layer 307, a conductive layer 515, a conductive layer 516, a conductive layer 525, a conductive layer 526, a conductive layer 535, and a conductive layer 536 are provided. These conductive layers have a function as a lead wiring.

The conductive layer 515 is electrically connected to the region 512 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311. The conductive layer 516 is electrically connected to the region 513 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311. The conductive layer 525 is electrically connected to the region 522 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311. The conductive layer 526 is electrically connected to the region 523 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311. The conductive layer 535 is electrically connected to the region 532 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311. The conductive layer 536 is electrically connected to the region 533 through an opening provided in the insulating layer 313, the insulating layer 312, and the insulating layer 311.

The conductive layer 515, the conductive layer 516, the conductive layer 525, the conductive layer 526, the conductive layer 535, and the conductive layer 536 are the conductive layer 413, the conductive layer 414, the conductive layer 423, the conductive layer 424, the conductive layer 433, and the conductive layer 434. The electrically conductive film which can be used for can be used.

<Configuration Example 6 of Display Device>
The display device 10 having the structure shown in FIG. 9 is provided with a substrate 202 and an adhesive layer 203 instead of the substrate 201, and a substrate 212 and an adhesive layer 213 instead of the substrate 211, as shown in FIG. The configuration of the display device 10 shown in FIG.

In the display device 10 having the configuration illustrated in FIG. 9, the insulating layer 205 and the substrate 202 are bonded to each other with the adhesive layer 203. The insulating layer 215 and the substrate 212 are attached to each other with an adhesive layer 213.

As the substrate 202 and the substrate 212, flexible substrates can be used. For example, a material having flexibility such as glass, quartz, resin, metal, alloy, or semiconductor can be used. The substrate 212 which is a substrate on the side from which light from the light-emitting element 304 is extracted is formed using a material that transmits the light. For example, the thickness of the substrate is preferably 1 μm to 200 μm, more preferably 1 μm to 100 μm, further preferably 10 μm to 50 μm, and further preferably 10 μm to 25 μm. The thickness and hardness of the flexible substrate are within a range where both mechanical strength and flexibility can be achieved. The flexible substrate may have a single layer structure or a laminated structure.

Since the specific gravity of resin is smaller than that of glass, it is preferable to use a resin as a flexible substrate because the display device 10 can be reduced in weight compared to the case of using glass. As the substrate 202 and the substrate 212, a material having high toughness, a material having high thermal conductivity, or a material having high heat radiation can be used as in the case of the substrate 201 and the substrate 211.

Examples of flexible and translucent materials include polyester resins such as PET and PEN, polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, PC resins, PES resins, polyamide resins (nylon, aramid). Etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, PTFE resin, ABS resin and the like. In particular, a material having a low linear expansion coefficient is preferably used. For example, polyamideimide resin, polyimide resin, polyamide resin, PET, or the like can be suitably used. In addition, a substrate in which a fibrous body is impregnated with a resin, a substrate in which an inorganic filler is mixed with a resin, and a linear expansion coefficient is reduced can be used.

As the flexible substrate, at least one of a layer using the above material is a hard coat layer (for example, a silicon nitride layer) that protects the surface of the device from scratches, a layer of a material that can disperse the pressure, and the like. And may be laminated.

When the flexible substrate has a glass layer, the barrier property against water and oxygen can be improved and the reliability of the display device 10 can be improved.

<Example 2 of Manufacturing Method of Display Device>
Next, an example of a method for manufacturing the display device 10 having the structure illustrated in FIG. 9 will be described with reference to FIGS.

First, the separation layer 603 is formed over the substrate 602 (FIG. 10A). The release layer 603 can be formed using various resin materials (including a resin precursor).

Next, the insulating layer 205 is formed over the separation layer 603. After that, a transistor 301, a transistor 302, a transistor 303, a capacitor 305, a light-emitting element 304, an organic layer 322a, a conductive layer 323a, and the like are formed by a method similar to that shown in FIGS. (FIG. 10B).

Next, a peeling layer 613 is formed over the substrate 612 (FIG. 10C). The release layer 613 can use a material that can be used for the release layer 603.

Next, the insulating layer 215 is formed over the separation layer 613. Subsequently, a colored layer 325 and a light-blocking layer 326 are formed by a method similar to that shown in FIG.

Next, in a manner similar to that shown in FIG. 4C, the surface of the substrate 602 on which the light-emitting element 304 and the like are formed and the surface of the substrate 612 on which the colored layer 325 and the like are formed are Bonding is performed using the adhesive layer 317 (FIG. 11A). In this case, the substrate 602 can be referred to as a manufacturing substrate, and the substrate 612 can be referred to as a sealing substrate.

Next, the separation layer 603 is irradiated with the laser light 65 through the substrate 602 (FIG. 11B). Accordingly, separation occurs at the interface between the separation layer 603 and the insulating layer 205 (FIG. 12A). Note that peeling may occur in the peeling layer 603, and peeling may occur at the interface between the substrate 602 and the peeling layer 603.

A hollow arrow in FIG. 11B indicates the scanning direction of the laser beam 65. In other drawings, the same description may be given.

Next, the insulating layer 205 and the substrate 202 are attached to each other with the use of the adhesive layer 203 (FIG. 12B). Note that an adhesive layer that can be used for the adhesive layer 317 can be used as the adhesive layer 203.

Next, the separation layer 613 is irradiated with laser light 65 through the substrate 612 (FIG. 13A). Thus, peeling occurs at the interface between the peeling layer 613 and the insulating layer 215 (FIG. 13B). Note that peeling may occur in the peeling layer 613 or peeling may occur at the interface between the substrate 612 and the peeling layer 613.

Next, the insulating layer 215 and the substrate 212 are attached using the adhesive layer 213 (FIG. 14A). Note that an adhesive layer that can be used for the adhesive layer 317 can be used as the adhesive layer 213.

Next, a dividing line 401 is formed in a portion overlapping with the organic layer 322a on the substrate 212 by a method similar to that shown in FIG. 5A (FIG. 14B). Thus, as in the case shown in FIG. 5B, the substrate 212, the organic layer 322a, the conductive layer 323a, and the like outside the dividing line 401 are separated from the display device 10, and the conductive layer 355 can be exposed. . In addition, the organic layer 322a and the conductive layer 323a inside the dividing line 401 remain without being separated.

Next, the connection body 319 is formed so as to be connected to the conductive layer 355, and the FPC 13 is formed so as to be connected to the connection body 319. The above is an example of a method for manufacturing the display device 10 having the structure illustrated in FIG.

Note that in this manufacturing method example, the substrate 602 is peeled off and the substrate 202 is attached, and then the substrate 612 is peeled off and the substrate 212 is attached. However, the substrate 612 is peeled off and the substrate 212 is attached. After the alignment, the substrate 602 may be peeled off and the substrate 202 may be bonded.

Further, in this manufacturing method example, after the substrate 612 is peeled and the substrate 212 is bonded, the dividing line 401 is formed, and the substrate 212, the organic layer 322a, the conductive layer 323a, and the like outside the dividing line 401 are separated. Is shown. However, in one embodiment of the present invention, the separation line 401 is formed before the substrate 612 is separated, the substrate 612, the organic layer 322a, the conductive layer 323a, and the like outside the separation line 401 are separated, and then the substrate 612 is separated. The substrate 212 may be bonded together.

<Touch panel>
In one embodiment of the present invention, a touch panel in which an input / output device (also referred to as a touch sensor) is mounted on the display device 10 can be manufactured.

There is no limitation on the detection elements (also referred to as sensor elements) included in the input / output device. Various sensors that can detect the proximity or contact of a detection target such as a finger or a stylus can be used as the detection element.

For example, various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used as a sensor method.

In this embodiment, a touch panel having a capacitive detection element will be described as an example.

Examples of the electrostatic capacity method include a surface electrostatic capacity method and a projection electrostatic capacity method. In addition, examples of the projected capacitance method include a self-capacitance method and a mutual capacitance method. Use of the mutual capacitance method is preferable because simultaneous multipoint detection is possible.

The touch panel of one embodiment of the present invention has a structure in which a separately manufactured display device 10 and a detection element are attached, and a structure in which an electrode that forms the detection element is provided on one or both of a substrate that supports the display element and a counter substrate Various configurations can be applied.

FIG. 15A is a schematic perspective view of the touch panel 300. FIG. 15B is a schematic perspective view of FIG. 15A developed. For the sake of clarity, only representative components are shown. In FIG. 15B, only some outlines of some components (the substrate 261, the substrate 211, and the like) are clearly shown by broken lines.

The touch panel 300 includes an input device 310 and a display device 10, which are provided so as to overlap each other. The input device 310 includes a substrate 261, an electrode 331, an electrode 332, a plurality of wirings 341, and a plurality of wirings 342. The FPC 350 is electrically connected to each of the plurality of wirings 341 and the plurality of wirings 342. The FPC 350 is provided with an IC 351.

The display device 10 includes a substrate 201 and a substrate 211 that are provided to face each other. The display device 10 includes a display area 11 and a drive circuit area 12. A wiring 383 and the like are provided over the substrate 201. The FPC 13 is electrically connected to the wiring 383. The FPC 13 is provided with an IC 374.

The wiring 383 has a function of supplying a signal and power to the display region 11 and the drive circuit region 12. The signal and power are input to the wiring 383 from the outside or the IC 374 through the FPC 13, respectively.

FIG. 16 shows an example of a cross-sectional view of the touch panel 300. FIG. 16 shows a cross-sectional structure of the display region 11, the drive circuit region 12, a region including the FPC 13, a region including the FPC 350, and the like. Further, in FIG. 16, a wiring formed by processing the same conductive layer as the gate of the transistor and a wiring formed by processing the same conductive layer as the source and drain of the transistor intersect. A cross-sectional structure is shown.

The substrate 201 and the substrate 211 are attached to each other with an adhesive layer 317. The substrate 211 and the substrate 261 are attached to each other with an adhesive layer 396. Here, as shown in FIG. 16, each layer from the substrate 201 to the substrate 211 corresponds to the display device 10. Each layer from the substrate 261 to the electrode 334 corresponds to the input device 310. That is, it can be said that the adhesive layer 396 bonds the display device 10 and the input device 310 together. Alternatively, each layer from the substrate 201 to the insulating layer 215 corresponds to the display device 10. Each layer from the substrate 261 to the substrate 211 corresponds to the input device 310. That is, it can be said that the adhesive layer 317 bonds the display device 10 and the input device 310 together.

An insulating layer 393, an electrode 331, and an electrode 332 are provided on the substrate 211 side of the substrate 261. Here, an example in which the electrode 331 includes the electrode 333 and the electrode 334 is illustrated. As indicated by an intersection 387 in FIG. 16, the electrode 332 and the electrode 333 are formed on the same plane. The insulating layer 395 is provided so as to cover the electrode 332 and the electrode 333. The electrode 334 is electrically connected to two electrodes 333 provided so as to sandwich the electrode 332 through an opening provided in the insulating layer 395.

A connection region 308 is provided in a region near the end of the substrate 261. The connection region 308 includes a wiring 342 and a conductive layer obtained by processing the same conductive layer as the electrode 334. The FPC 350 is electrically connected to the connection region 308 through the connection body 309.

The configurations shown in FIGS. 1, 2, 7 to 9, 15, and 16 can be combined as necessary or appropriately. The manufacturing method of the display device 10 illustrated in FIGS. 3 to 6 and FIGS. 10 to 14 can be combined as appropriate or necessary.

This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 2)
<Configuration of CAC-OS>
In this embodiment, a structure of a CAC-OS that can be used for the transistor disclosed in one embodiment of the present invention will be described.

The CAC-OS is one structure of a material in which an element included in an oxide semiconductor is unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. Note that in the following, in an oxide semiconductor, one or more metal elements are unevenly distributed, and a region including the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. The state mixed with is also referred to as a mosaic or patch.

Note that the oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{_{_{(hereinafter, in X2 Zn Y2 O Z2 (}}} X2, Y2, and Z2 is larger real than 0) and a.) or the like, Gallium oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter Also referred to as a cloud-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite oxide semiconductor having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and may refer to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

On the other hand, CAC-OS relates to a material structure of an oxide semiconductor. CAC-OS refers to a region observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn and O, and nanoparticles mainly composed of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

Instead of gallium, selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

The CAC-OS has a feature that a clear peak is not observed when measurement is performed using a θ / 2θ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and each region is mainly composed of each element. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than the region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.

On the other hand, regions _{GaO X3,} etc. as a main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, the region whose main component is GaO _X3 or the like is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _X3 or the like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

(Embodiment 3)
In this embodiment, electronic devices of one embodiment of the present invention are described with reference to drawings.

An electronic device exemplified below includes the display device of one embodiment of the present invention in a display region. Therefore, the electronic device has a high resolution. In addition, the electronic device can achieve both high resolution and a large screen.

In the display area of the electronic device of one embodiment of the present invention, for example, an image having a resolution of full high vision, 4K2K, 8K4K, 16K8K, or higher can be displayed. The screen size of the display area may be 20 inches or more diagonal, 30 inches diagonal or more, 50 inches diagonal, 60 inches diagonal, or 70 inches diagonal.

Examples of electronic devices include relatively large screens such as television devices, desktop or notebook personal computers, monitors for computers, digital signage (digital signage), and large game machines such as pachinko machines. In addition to electronic devices, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, sound reproduction devices, and the like can be given.

The electronic device or the lighting device of one embodiment of the present invention can be incorporated along a curved surface of an inner wall or an outer wall of a house or a building, or an interior or exterior of an automobile.

The electronic device of one embodiment of the present invention may include an antenna. By receiving the signal with the antenna, it is possible to display video and information in the display area. In the case where the electronic device includes an antenna and a secondary battery, the antenna may be used for non-contact power transmission.

The electronic device of one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, It may have a function of measuring voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared).

The electronic device of one embodiment of the present invention can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) in the display area, a touch panel function, a function for displaying a calendar, date or time, a function for executing various software (programs), and wireless communication A function, a function of reading a program or data recorded on a recording medium, and the like can be provided.

FIG. 17A illustrates an example of a television device. In the television device 7100, a display area 7000 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by a stand 7103 is shown.

A display device manufactured by the manufacturing method of one embodiment of the present invention can be applied to the display region 7000. Thus, the price of the television device 7100 can be reduced.

Operation of the television device 7100 illustrated in FIG. 17A can be performed with an operation switch included in the housing 7101 or a separate remote controller 7111. Alternatively, the display area 7000 may be provided with a touch sensor, and may be operated by touching the display area 7000 with a finger or the like. The remote controller 7111 may have a display area for displaying information output from the remote controller 7111. Channels and volume can be operated with an operation key or a touch panel of the remote controller 7111, and an image displayed in the display area 7000 can be operated.

Note that the television device 7100 is provided with a receiver, a modem, and the like. A general television broadcast can be received by the receiver. In addition, by connecting to a wired or wireless communication network via a modem, information communication is performed in one direction (sender to receiver) or two-way (between sender and receiver, or between receivers). It is also possible.

FIG. 17B illustrates a laptop personal computer 7200. A laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display area 7000 is incorporated in the housing 7211.

A display device manufactured by the manufacturing method of one embodiment of the present invention can be applied to the display region 7000. Thereby, the price of the notebook personal computer 7200 can be reduced.

FIGS. 17C and 17D illustrate an example of digital signage (digital signage).

A digital signage 7300 illustrated in FIG. 17C includes a housing 7301, a display area 7000, a speaker 7303, and the like. Furthermore, an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like can be provided.

FIG. 17D illustrates a digital signage 7400 attached to a columnar column 7401. The digital signage 7400 has a display area 7000 provided along the curved surface of the pillar 7401.

17C and 17D, the display device manufactured by the manufacturing method of one embodiment of the present invention can be applied to the display region 7000. Thereby, the price of the digital signage 7300 and the digital signage 7400 can be reduced.

The larger the display area 7000, the more information can be provided at one time. In addition, the wider the display area 7000, the easier it is for people to see. For example, the advertising effect of advertisement can be enhanced.

By applying a touch panel to the display area 7000, not only an image or a moving image is displayed in the display area 7000, but also a user can operate intuitively, which is preferable. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be improved by an intuitive operation.

In addition, as illustrated in FIGS. 17C and 17D, the digital signage 7300 or the digital signage 7400 can be linked with the information terminal 7311 or the information terminal 7411 such as a smartphone possessed by the user by wireless communication. Is preferred. For example, advertisement information displayed in the display area 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, the display of the display area 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.

Further, the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). Thereby, an unspecified number of users can participate and enjoy the game at the same time.

In this example, the case where an image is displayed using the display device of one embodiment of the present invention will be described.

A method for manufacturing a display device displaying an image in this embodiment will be described with reference to FIGS. Note that the display device is provided with a pixel including a sub-pixel that performs red display, a sub-pixel that performs green display, and a sub-pixel that performs blue display.

First, the peeling layer 702 was formed over the glass substrate 701. The peeling layer 702 was tungsten with a thickness of 30 nm. Next, an insulating layer 703 was formed over the peeling layer 702. The insulating layer 703 includes, from the bottom, a stacked structure of silicon oxynitride with a thickness of 100 nm, silicon nitride with a thickness of 100 nm, silicon oxynitride with a thickness of 200 nm, silicon nitride with a thickness of 200 nm, and silicon oxynitride with a thickness of 600 nm. did. After that, a circuit 704 including a transistor included in the pixel, a capacitor, a driver circuit, and the like was formed over the insulating layer 703.

Next, a pixel electrode 705 was formed over the circuit 704. The pixel electrode 705 has a stacked structure of titanium having a thickness of 5 nm, aluminum having a thickness of 200 nm, and aluminum having a thickness of 50 nm from the lower side. Next, an optical adjustment layer 720 was formed over the pixel electrode 705. ITO was used as the optical adjustment layer 720. The film thickness of the optical adjustment layer was 95 nm for the sub-pixel for displaying red, 45 nm for the sub-pixel for displaying green, and 5 nm for the sub-pixel for displaying blue.

Next, an organic EL layer 706 was formed on the optical adjustment layer 720, and an organic EL layer 706a was formed on the circuit 704 by using the same material and the same process as the organic EL layer 706. As the organic EL layer 706, a light emitting layer emitting white light was used. Thereafter, a common electrode 707 was formed on the organic EL layer 706, and a conductive layer 707a was formed on the organic EL layer 706a by using the same material and the same process as the common electrode 707. The common electrode 707 and the conductive layer 707a are made of ITO having a thickness of 70 nm. Through the above steps, the organic EL element 708 including the pixel electrode 705, the optical adjustment layer 720, the organic EL layer 706, and the common electrode 707 was formed (FIG. 18A).

Next, a colored layer 710 was formed over the glass substrate 709. The thickness of the coloring layer 710 was 2.0 μm for the sub-pixel that performs red display, 2.0 μm for the sub-pixel that performs green display, and 1.0 μm for the sub-pixel that performs blue display.

Subsequently, the surface of the glass substrate 701 on which the circuit 704 and the organic EL element 708 are formed and the surface of the glass substrate 709 on which the colored layer 710 is formed are bonded using an adhesive layer 711 ( FIG. 18 (B)). CEP-5 resin was used as the adhesive layer 711 and was applied by screen printing.

Next, separation was caused between the separation layer 702 and the insulating layer 703 to separate the glass substrate 701 (FIG. 18C). Subsequently, the glass substrate 712 and the insulating layer 703 were attached to each other using the adhesive layer 713 (FIG. 18D). The adhesive layer 713 was formed using the same material and the same method as the adhesive layer 711.

Next, a sharp blade at the tip was pressed against the portion of the glass substrate 709 overlapping the organic EL layer 706a. Thus, a cut was made in the glass substrate 709 to form a dividing line 714 (FIG. 18E). Subsequently, the circuit 704 was exposed by separating the organic EL layer 706a, the conductive layer 707a, the glass substrate 709, and the adhesive layer 711 outside the dividing line 714 (FIG. 18F). Thereafter, terminals were exposed to the exposed circuit 704.

A display device was manufactured by the above procedure, and an image was displayed. Note that in the display device, the diagonal length of the display area is 2.78 inches, the driving method is the active matrix method, the resolution is 2560 × 1440 (WQHD), the color expression method is the RGB method, the pixel density is 1058 ppi, and the aperture ratio Was 10.80%. In addition, pixels that extract red light, pixels that extract green light, and pixels that extract green light are arranged in a zigzag pattern. In addition to the organic EL element 708, one pixel has two transistors and one capacitor element. The source driver was mounted by a COF (Chip On Film) method using a demultiplexer. The gate driver was integrated on the substrate.

FIG. 19 shows the display result. It was confirmed that the display device of one embodiment of the present invention operates normally and can display an image.

10: display device, 11: display region, 12: drive circuit region, 13: FPC, 65: laser light, 201: substrate, 202: substrate, 203: adhesive layer, 205: insulating layer, 211: substrate, 212: substrate 213: Adhesive layer, 215: Insulating layer, 261: Substrate, 300: Touch panel, 301: Transistor, 302: Transistor, 303: Transistor, 304: Light emitting element, 305: Capacitor element, 306: Connection region, 307: Conductive layer 308: connection region 309: connection body 310: input device 311: insulating layer 312: insulating layer 313: insulating layer 314: insulating layer 315: insulating layer 317: adhesive layer 319: connecting body 321: Conductive layer, 322: Light emitting layer, 322a: Organic layer, 323: Conductive layer, 323a: Conductive layer, 324: Optical adjustment layer, 325: Colored layer, 326: Optical layer, 331: electrode, 332: electrode, 333: electrode, 334: electrode, 341: wiring, 342: wiring, 350: FPC, 351: IC, 355: conductive layer, 374: IC, 383: wiring, 387: Intersection, 393: insulating layer, 395: insulating layer, 396: adhesive layer, 400: region, 401: dividing line, 411: conductive layer, 412: semiconductor layer, 413: conductive layer, 414: conductive layer, 415: conductive Layer, 421: conductive layer, 422: semiconductor layer, 423: conductive layer, 424: conductive layer, 425: conductive layer, 431: conductive layer, 432: semiconductor layer, 433: conductive layer, 434: conductive layer, 435: conductive Layer, 451: conductive layer, 511: region, 512: region, 513: region, 514: conductive layer, 515: conductive layer, 516: conductive layer, 521: region, 522: region, 523: region, 524: Electrical layer 525: Conductive layer 526: Conductive layer 531: Region 532: Region 533: Region 534: Conductive layer 535: Conductive layer 536: Conductive layer 551: Region 552: Conductive layer 602 : Substrate, 603: release layer, 612: substrate, 613: release layer, 701: glass substrate, 702: release layer, 703: insulating layer, 704: circuit, 705: pixel electrode, 706: organic EL layer, 706a: organic EL layer, 707: common electrode, 707a: conductive layer, 708: organic EL element, 709: glass substrate, 710: colored layer, 711: adhesive layer, 712: glass substrate, 713: adhesive layer, 714: dividing line, 720 : Optical adjustment layer, 7000: Display area, 7100: Television apparatus, 7101: Case, 7103: Stand 7111: Remote control device, 7200: Notebook personal Computer, 7211: Case, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Case, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar 7411: Information terminal,

Claims

A first substrate, a second substrate, a light emitting element, an adhesive layer, and an organic layer;
The light emitting element, the adhesive layer, and the organic layer are provided between the first substrate and the second substrate,
The organic layer has a region in contact with the adhesive layer,
On the first substrate, a first region where the light emitting element is provided and a second region which does not overlap the second substrate are provided,
The light emitting element includes a light emitting layer, a first conductive layer, and a second conductive layer,
The display device, wherein the organic layer has the same material as the light-emitting layer and is provided between the first region and the second region.
In claim 1,
The adhesive layer is provided in contact with the second region,
The display device, wherein the organic layer is provided so as to be in contact with a boundary portion between the adhesive layer and the second region.
In claim 2,
The display device, wherein the organic layer is provided in a region perpendicular to the boundary portion and 0.1 mm away in a direction away from the second region.
In any one of Claims 1 thru | or 3,
Has an external input terminal,
The display device, wherein the external input terminal is provided in the second region.
In any one of Claims 1 thru | or 3,
Having a transistor,
The transistor is provided in the first region;
The display device is characterized in that the first conductive layer is electrically connected to one of a source and a drain of the transistor.
In any one of Claims 1 thru | or 3,
The display device, wherein the adhesive layer includes a curable adhesive.
In any one of Claims 1 thru | or 3,
A display device, wherein a colored layer is provided in the first region.
In any one of Claims 1 thru | or 3,
Having a third conductive layer;
The third conductive layer has a region in contact with the first light emitting layer,
The display device, wherein the third conductive layer has the same material as the second conductive layer.
In any one of Claims 1 thru | or 3,
The first conductive layer has a function as a pixel electrode of the light emitting element,
The display device, wherein the second conductive layer has a function as a common electrode of the light emitting element.
Forming a transistor and a first conductive layer on a first substrate;
Forming a first insulating layer so as to have a region overlapping with the transistor and the first conductive layer;
Forming a first opening reaching one of a source or a drain of the transistor and a second opening reaching the first conductive layer in the first insulating layer;
Forming a second conductive layer in the first opening and forming a third conductive layer in the second opening;
Forming a light emitting layer so as to have a region overlapping with the second conductive layer, and forming an organic layer so as to have a region overlapping with the third conductive layer;
Bonding the surface of the first substrate on which the transistor is formed and the second substrate using an adhesive layer;
Separating the second substrate, the adhesive layer, and the organic layer provided in a region overlapping with the third conductive layer;
And a step of forming an external input terminal so as to be electrically connected to the third conductive layer.
In claim 10,
The second substrate and the adhesive layer provided in a region overlapping the third conductive layer after a cut is made in a portion overlapping the first conductive layer and the organic layer of the second substrate And a method for manufacturing a display device, wherein the organic layer is separated.
In claim 10 or 11,
A method for manufacturing a display device, wherein a surface of the first substrate on which the transistor is formed and the second substrate are bonded together using an adhesive layer having a hard adhesive.
In any one of Claims 10 thru | or 11,
After forming a colored layer on the second substrate,
A method for manufacturing a display device, wherein a surface of the first substrate on which the transistor is formed is bonded to a surface of the second substrate on which the colored layer is formed.