WO2018204478A1 - Tunable infrared transmission filters with phase change materials - Google Patents

Tunable infrared transmission filters with phase change materials Download PDF

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Publication number
WO2018204478A1
WO2018204478A1 PCT/US2018/030621 US2018030621W WO2018204478A1 WO 2018204478 A1 WO2018204478 A1 WO 2018204478A1 US 2018030621 W US2018030621 W US 2018030621W WO 2018204478 A1 WO2018204478 A1 WO 2018204478A1
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Prior art keywords
active region
substrate
tunable filter
phase change
resonator structure
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PCT/US2018/030621
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French (fr)
Inventor
Jeffrey Brian CHOU
Vladimir Liberman
Juejun Hu
Yifei Zhang
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Massachusetts Institute Of Technology
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Publication of WO2018204478A1 publication Critical patent/WO2018204478A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/213—Fabry-Perot type

Definitions

  • the invention is related to the field of transmission filters, and in particular to a tunable transmission filter having phase change materials.
  • a tunable filter includes a substrate, and an active region that is positioned on the substrate.
  • the active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state.
  • a resonator structure includes a substrate, and an active region that is positioned on the substrate.
  • the active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state.
  • a method of forming a tunable filter includes providing a substrate, and positioning an active region on the substrate.
  • the active region includes a layer of Ge2Sb2Se 4 Tei (GSS4T1) that allows for switching from an amorphous state to a crystalline state.
  • FIG. 1 A- ID is a schematic diagram and plots illustrating the properties of a Fabry- Perot resonator formed in accordance of the invention
  • FIGs. 2A-2B are plots illustrating the pump-probe transmission switching measurements using the Fabry-Perot resonator of FIG. 1A;
  • FIGs. 3A-3B is a schematic diagram and plots illustrating the properties of a metasurface dielectric resonator array formed in accordance of the invention.
  • the invention involves a solid-state solution for tunable transmission filters by employing a newly developed, low- loss phase change material that includes selenium (Se), such as Ge 2 Sb 2 SeiTe 4 , Ge2Sb 2 Se 2 Te3, Ge 2 Sb2Se 3 Te2, or Ge 2 Sb 2 Se 4 Tei (GSS4T1) in an active region, which is capable of switching from a low index state (amorphous) to a high index state (hexagonal). More commonly used phase change materials, such as Ge2Sb2Te5, have high losses in the long-wave IR due to free-carrier absorption.
  • the experimentally measured optical properties of GSS4T1 are used as the design basis for dielectric IR resonators.
  • the first design is a thin film Fabry- Perot resonator with a target wavelength at 1064 ran, which corresponds to a film thickness of 150 nm on a CaF2 substrate.
  • the second design is a patterned metasurface design consisting of a 2D array of 150 nm thick dielectric cylindrical cavities with a resonance at a wavelength of 3.96 ⁇ formed on a substrate structure such as calcium fluoride (CaF 2 ).
  • FIG.1A is schematic diagram illustrating a Fabry- Perot resonator 2 formed in accordance with the invention.
  • the Fabry-Perot resonator 2 includes a 150 nm thick GSS4T1 film deposited via flash evaporation on CaF 2 IR transparent substrate 6 to form an active region 4.
  • GSS4T1 150 nm thick GSS4T1 film deposited via flash evaporation on CaF 2 IR transparent substrate 6 to form an active region 4.
  • Other low-loss phase change material having selenium (Se) besides GSS4T1 can be used in accordance with the invention, such as Ge2Sb2SeiTe , Ge 2 Sb2Se2Te3, or Ge2Sb2Se3Te2.
  • a protection layer 8 can be formed on the active region 4 to improve durability of the resonator 2, as shown in FIG. IB.
  • the protection layer 8 can include any standard oxide or MgF2.
  • the active region 4 can include additional thin film material layers in addition to the phase change material to form more advanced optical filters.
  • the film material layers can include oxides, silicon, or germanium.
  • the substrate 6 can include a non-transparent substrate to form reflective filters.
  • the non-transparent substrate can consist of a silicon CMOS chip or the like.
  • the fitted Kramers-Kronig consistent n,k values of the phase change material in its two states (amorphous, crystalline) are shown in FIG. 1C.
  • the crystalline state is hexagonal but it on other embodiments there can be other crystal structures that form.
  • Optical constants were obtained by combining measurements from UV-NIR ellipsometery, near-IR, and Fourier Transform IR (FTIR) measurement systems to span the UV to long- wave IR spectrum. The material was thermally switched via a furnace at 350°C for 30 minutes in a nitrogen environment.
  • the results show the low loss for both the amorphous and hexagonal states.
  • the main cause for the low loss is the reduction of free-carrier absorption. This difference explains the optical and electrical difference from the more commonly used Ge2Sb2Tes films which are electrically conductive and optically absorbing for wavelengths > 2 ⁇ .
  • FIG. ID shows the measured transmission spectrum of the 150 nm thick, un- patterned GSS4T1 film from the visible to the IR. Due to the high index of the film, a Fabry- Perot resonance is observed at a wavelength of 1064 nm in the amorphous state with a transmission of 88%. The resonant wavelength's sensitivity to an incident angle is also significantly mitigated due to the high index of the film: a resonance wavelength shift of less than 10 nm at a 30° incident angle is obtained. This angular insensitivity is important for imaging applications at higher numerical apertures. In the hexagonal state, the transmission at 1064 nm reduces to 5%, which shows a resonance enhanced switching contrast of 12.4 dB.
  • the shift of the peak's resonant wavelength also demonstrates the change in the refractive index and is in agreement with simulations.
  • FIGs. 2A-2B The time-dependent, pump-probe transmission switching measurement using the Fabry-Perot device 2 is shown in FIGs. 2A-2B, where the 54 mW 1064 nm probe beam switches on average from 95.7% ⁇ 19.4% (7 dB) via a 10 ⁇ & pump pulse, as shown in FIG. 2A.
  • the pump beam consists of 3 lasers at 405 nm, 633 nm, and 785 nm with a total power of 136 mW focused down to *10 um diameter spot size via a 50x objective lens.
  • the inset 10 shows the material stack composed of MgF2/GSS4Tl with thicknesses of 50 nm/150 nm on a CaF2 substrate. The highest reversible transmission contrast switching using phase change materials.
  • FIG. 2B shows the photodetector response of the transmitted pump beams.
  • the switching speed can be significantly improved with a higher-powered laser as the material is converted from hexagonal to crystalline via a 4 ns pulse at 40 mJ/cm2 at 532 nm.
  • the fully reversible re-amorphization occurs within 6 ⁇ $ without a second pulse due to the fast cooling time caused by the high thermal diffusivity constants of the MgF2 and CaF2 layers, compared to GSS4T1.
  • More traditional bistable switching can be achieved if less thermally diffuse materials surrounded the GSS4T1, such as S1O2.
  • phase change materials having selenium (Se) besides GSS4T1 can be used in the same fashion as well, such as Ge2Sb2SeiTe , Ge 2 Sb 2 Se 2 Te 3 , or Ge2Sb2Se3Te2, producing similar results discussed above
  • An alternative embodiment of the invention includes forming Midwave IR resonators that are achieved via an electron-beam patterned periodic dielectric resonator array 14.
  • the dielectric resonator array 14 is formed on a transparent substrate 16 having an active region defined by a plurality of cylinders 12, as shown in FIG. 3 A.
  • the cylinders 12 include a period (P), diameter (D), and thickness (T) of 3 ⁇ , 2 pm, and 150 nm, respectively.
  • the measured peak switching contrast from 84% ⁇ 54% (1.9 dB) occurs at a wavelength of 3.96 pm via furnace annealing.
  • FIG. 3B shows the transmission spectra of the patterned metasurface 28, 30 design compared with finite-difference time-domain (FDTD) simulation 22, 24, 26.
  • FDTD finite-difference time-domain
  • the FDTD simulation curves 22, 24, 26 match the incident angle of the Schwarzschild microscope objective used in the measurement.
  • the FDTD curve shows the simulated transmission at normal incidence only.
  • Note a non-periodic periodic dielectric resonator array can also be formed using the techniques described herein.
  • Insets 18, 20 show visible microscope images of the fabricated arrays before and after annealing.
  • the design wavelength was 4.31 ⁇ , which was based on finite- difference time-domain (FDTD) simulation using the measured optical constants of GSS4T1.
  • the resonant wavelength can be tuned by adjusting the period and dimensions of the cylinders.
  • phase change materials having selenium (Se) besides GSS4T1 can be used with this embodiment of the invention, such as Ge2Sb2SeiTe 4 , Ge2Sb2Se2Te3, or Ge2Sb2Se3Te2, producing similar results discussed above.
  • FIG. 3B shows the FDTD simulations for both lens NA and normally incident light.
  • the invention presents a solid-state, ultra-thin (150 nm), polarization independent, fast (4 ns), optically tunable infrared transmission filters using phase change dielectric resonators.
  • the invention provides the highest reported reversible transmission switching of 95.7% ⁇ 19.3% (7 dB) at 1064 nm.
  • the invention improves over standard filter arrangements used in MEMS, moving lenses, microfluidics, scanning gratings technologies or the like.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

A tunable filter is provided that includes a substrate, and an active region that is positioned on the substrate. The active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state.

Description

TUNABLE INFRARED TRANSMISSION FILTERS
WITH PHASE CHANGE MATERIALS
PRIORITY INFORMATION
This application claims priority from U.S. Provisional Application Serial No. 62/500,630 filed May 3, 2017, which is incorporated herein by reference in its entirety.
This invention was made with Government support under Contract No. FA8702-15-D-0001 awarded by the U.S. Air Force. The Government has certain rights in the invention.
BACKGROUND OF THE INVENTION
The invention is related to the field of transmission filters, and in particular to a tunable transmission filter having phase change materials.
The current challenge of actively tunable infrared transmission filters is a lack of viable solid-state options for ultrafast and ultra-compact applications. Current methods require bulky optical systems or complex fabrication with low fill factors (e.g., MEMS, moving lenses, microfluidics, scanning gratings). This limitation prohibits advanced applications such as hyperspectral imaging, portable bio/chem sensing systems, thermal emission control, and tunable filters.
SUMMARY OF THE INVENTION
According to one aspect of the invention, there is provided a tunable filter. The tunable filter includes a substrate, and an active region that is positioned on the substrate. The active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state. According to another aspect of the invention, there is provided a resonator structure. The resonator structure includes a substrate, and an active region that is positioned on the substrate. The active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state.
According to another aspect of the invention, there is provided a method of forming a tunable filter. The method includes providing a substrate, and positioning an active region on the substrate. The active region includes a layer of Ge2Sb2Se4Tei (GSS4T1) that allows for switching from an amorphous state to a crystalline state.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 A- ID is a schematic diagram and plots illustrating the properties of a Fabry- Perot resonator formed in accordance of the invention;
FIGs. 2A-2B are plots illustrating the pump-probe transmission switching measurements using the Fabry-Perot resonator of FIG. 1A; and
FIGs. 3A-3B is a schematic diagram and plots illustrating the properties of a metasurface dielectric resonator array formed in accordance of the invention.
DETAILED DESCRIPTION OF THE INVENTION
The invention involves a solid-state solution for tunable transmission filters by employing a newly developed, low- loss phase change material that includes selenium (Se), such as Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, Ge2Sb2Se3Te2, or Ge2Sb2Se4Tei (GSS4T1) in an active region, which is capable of switching from a low index state (amorphous) to a high index state (hexagonal). More commonly used phase change materials, such as Ge2Sb2Te5, have high losses in the long-wave IR due to free-carrier absorption. The experimentally measured optical properties of GSS4T1 are used as the design basis for dielectric IR resonators. The first design is a thin film Fabry- Perot resonator with a target wavelength at 1064 ran, which corresponds to a film thickness of 150 nm on a CaF2 substrate. The second design is a patterned metasurface design consisting of a 2D array of 150 nm thick dielectric cylindrical cavities with a resonance at a wavelength of 3.96 μιη formed on a substrate structure such as calcium fluoride (CaF2).
FIG.1A is schematic diagram illustrating a Fabry- Perot resonator 2 formed in accordance with the invention. The Fabry-Perot resonator 2 includes a 150 nm thick GSS4T1 film deposited via flash evaporation on CaF2 IR transparent substrate 6 to form an active region 4. Other low-loss phase change material having selenium (Se) besides GSS4T1 can be used in accordance with the invention, such as Ge2Sb2SeiTe , Ge2Sb2Se2Te3, or Ge2Sb2Se3Te2. A protection layer 8 can be formed on the active region 4 to improve durability of the resonator 2, as shown in FIG. IB. The protection layer 8 can include any standard oxide or MgF2. In other embodiments of the invention, the active region 4 can include additional thin film material layers in addition to the phase change material to form more advanced optical filters. The film material layers can include oxides, silicon, or germanium. The substrate 6 can include a non-transparent substrate to form reflective filters. The non-transparent substrate can consist of a silicon CMOS chip or the like.
The fitted Kramers-Kronig consistent n,k values of the phase change material in its two states (amorphous, crystalline) are shown in FIG. 1C. In this case, the crystalline state is hexagonal but it on other embodiments there can be other crystal structures that form. Optical constants were obtained by combining measurements from UV-NIR ellipsometery, near-IR, and Fourier Transform IR (FTIR) measurement systems to span the UV to long- wave IR spectrum. The material was thermally switched via a furnace at 350°C for 30 minutes in a nitrogen environment. The results show the low loss for both the amorphous and hexagonal states. The main cause for the low loss is the reduction of free-carrier absorption. This difference explains the optical and electrical difference from the more commonly used Ge2Sb2Tes films which are electrically conductive and optically absorbing for wavelengths > 2 μιη. The active region
FIG. ID shows the measured transmission spectrum of the 150 nm thick, un- patterned GSS4T1 film from the visible to the IR. Due to the high index of the film, a Fabry- Perot resonance is observed at a wavelength of 1064 nm in the amorphous state with a transmission of 88%. The resonant wavelength's sensitivity to an incident angle is also significantly mitigated due to the high index of the film: a resonance wavelength shift of less than 10 nm at a 30° incident angle is obtained. This angular insensitivity is important for imaging applications at higher numerical apertures. In the hexagonal state, the transmission at 1064 nm reduces to 5%, which shows a resonance enhanced switching contrast of 12.4 dB. The shift of the peak's resonant wavelength also demonstrates the change in the refractive index and is in agreement with simulations. Note other low-loss phase change materials having selenium (Se) besides GSS4T1 can be used in accordance with the invention, such as Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, or Ge2Sb2Se3Te2, producing similar results discussed above.
The time-dependent, pump-probe transmission switching measurement using the Fabry-Perot device 2 is shown in FIGs. 2A-2B, where the 54 mW 1064 nm probe beam switches on average from 95.7% <→ 19.4% (7 dB) via a 10 μ& pump pulse, as shown in FIG. 2A. The pump beam consists of 3 lasers at 405 nm, 633 nm, and 785 nm with a total power of 136 mW focused down to *10 um diameter spot size via a 50x objective lens. The inset 10 shows the material stack composed of MgF2/GSS4Tl with thicknesses of 50 nm/150 nm on a CaF2 substrate. The highest reversible transmission contrast switching using phase change materials. FIG. 2B shows the photodetector response of the transmitted pump beams.
The switching speed can be significantly improved with a higher-powered laser as the material is converted from hexagonal to crystalline via a 4 ns pulse at 40 mJ/cm2 at 532 nm. The fully reversible re-amorphization occurs within 6 μ$ without a second pulse due to the fast cooling time caused by the high thermal diffusivity constants of the MgF2 and CaF2 layers, compared to GSS4T1. More traditional bistable switching can be achieved if less thermally diffuse materials surrounded the GSS4T1, such as S1O2. Note other low-loss phase change materials having selenium (Se) besides GSS4T1 can be used in the same fashion as well, such as Ge2Sb2SeiTe , Ge2Sb2Se2Te3, or Ge2Sb2Se3Te2, producing similar results discussed above
An alternative embodiment of the invention includes forming Midwave IR resonators that are achieved via an electron-beam patterned periodic dielectric resonator array 14. The dielectric resonator array 14 is formed on a transparent substrate 16 having an active region defined by a plurality of cylinders 12, as shown in FIG. 3 A. The cylinders 12 include a period (P), diameter (D), and thickness (T) of 3 μηι, 2 pm, and 150 nm, respectively. The measured peak switching contrast from 84%→ 54% (1.9 dB) occurs at a wavelength of 3.96 pm via furnace annealing. FIG. 3B shows the transmission spectra of the patterned metasurface 28, 30 design compared with finite-difference time-domain (FDTD) simulation 22, 24, 26. The FDTD simulation curves 22, 24, 26 match the incident angle of the Schwarzschild microscope objective used in the measurement. The FDTD curve shows the simulated transmission at normal incidence only. Note a non-periodic periodic dielectric resonator array can also be formed using the techniques described herein. Insets 18, 20 show visible microscope images of the fabricated arrays before and after annealing. The design wavelength was 4.31 μηι, which was based on finite- difference time-domain (FDTD) simulation using the measured optical constants of GSS4T1. The resonant wavelength can be tuned by adjusting the period and dimensions of the cylinders. Note other low-loss phase change materials having selenium (Se) besides GSS4T1 can be used with this embodiment of the invention, such as Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, or Ge2Sb2Se3Te2, producing similar results discussed above.
The discrepancy between simulation and measurement can be attributed to the deviations in the optical properties of the material as well as deviations in the geometry of the fabricated cylinders. The numerical aperture (NA) of the FTIR lens used also mitigates the transmission contrast since the metasurface design is angle sensitive. FIG. 3B shows the FDTD simulations for both lens NA and normally incident light.
The invention presents a solid-state, ultra-thin (150 nm), polarization independent, fast (4 ns), optically tunable infrared transmission filters using phase change dielectric resonators. The invention provides the highest reported reversible transmission switching of 95.7%<→ 19.3% (7 dB) at 1064 nm. The invention improves over standard filter arrangements used in MEMS, moving lenses, microfluidics, scanning gratings technologies or the like.
Although the present invention has been shown and described with respect to several preferred embodiments thereof, various changes, omissions and additions to the form and detail thereof, may be made therein, without departing from the spirit and scope of the invention.

Claims

What is claimed is: CLAIMS
1. A tunable filter comprising:
a substrate; and
an active region that is positioned on the substrate, the active region includes a phase change material having selenium (Se) that allows for switching from an amorphous state to a crystalline state.
2. The tunable filter of claim 1, wherein the substrate comprises a transparent substrate.
3. The tunable filter of claim 2. wherein the transparent substrate includes calcium fluoride (CaF2).
4. The tunable filter of claim 3, wherein the substrate and active region are formed into a Fabry- Perot resonator.
5. The tunable filter of claim 3, wherein the substrate and active region are formed into a periodic or non-periodic dielectric resonator array.
6. The tunable filter of claim 4, wherein the active region comprises a thickness of approximately 150 nm.
7. The tunable filter of claim 5, wherein the active region includes a plurality of cylinders having a selective period, diameter, and thickness.
8. The tunable filter of claim 1, wherein the crystalline state comprises a hexagonal state.
9. The tunable filter of claim 1 , wherein the active region comprises one or more thin film material layers.
10. The tunable filter of claim 1, wherein the substrate comprises a non-transparent substrate.
11. The tunable filter of claim 1, wherein the phase change material comprises Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, Ge2Sb2Se3Te2, or Ge2Sb2Se4Tei (GSS4T1).
12. A resonator structure comprising:
a substrate;
an active region that is positioned on the substrate, the active region includes a layer of Ge2Sb2Se4Tei (GSS4T1) that allows for switching from an amorphous state to a crystalline state.
13. The resonator structure of claim 12, wherein the substrate comprises a transparent substrate.
14. The resonator structure of claim 13, wherein the transparent substrate includes calcium fluoride (CaF2).
15. The resonator structure of claim 14, wherein the substrate and active region are formed into a Fabry- Perot resonator.
16. The resonator structure of claim 14, wherein the substrate and active region are formed into a periodic or non-periodic dielectric resonator array.
17. The resonator structure of claim 15, wherein the active region comprises a thickness of approximately 150 nm.
18. The resonator structure of claim 16, wherein the active region includes a plurality of cylinders having a selective period, diameter, and thickness.
19. The resonator structure of claim 12, wherein the crystalline state comprises a hexagonal state.
20. The resonator structure of claim 12, wherein the active region comprises one or more thin film material layers.
21. The resonator structure of claim 12, wherein the substrate comprises a non- transparent substrate.
22. The resonator structure of claim 12, wherein the phase change material comprises Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, Ge2Sb2Se3Te2, or Ge2Sb2Se4Tei (GSS4T1).
23. A method of forming a tunable filter comprising:
providing a substrate; and
positioning an active region on the substrate, the active region includes a layer of Ge2Sb2Se4Tei (GSS4T1) that allows for switching from an amorphous state to a crystalline state.
24. The method of claim 23, wherein the substrate comprises a transparent substrate.
25. The method of claim 24, wherein the transparent substrate includes calcium fluoride (CaF2).
26. The method of claim 25, wherein the substrate and active region are formed into a Fabry- Perot resonator.
27. The method of claim 25, wherein the substrate and active region are formed into a periodic or non-periodic dielectric resonator array.
28. The method of claim 26, wherein the active region comprises a thickness of approximately 150 nm.
29. The method of claim 27, wherein the active region includes a plurality of cylinders having a selective period, diameter, and thickness.
30. The method of claim 23, wherein the crystalline state comprises a hexagonal state.
31. The method of claim 23, wherein the active region comprises one or more thin film material layers.
32. The method of claim 23, wherein the substrate comprises a non-transparent substrate.
33. The method of claim 23, wherein the phase change material comprises
Ge2Sb2SeiTe4, Ge2Sb2Se2Te3, Ge2Sb2Se3Te2, or Ge2Sb2Se4Tei (GSS4T1).
PCT/US2018/030621 2017-05-03 2018-05-02 Tunable infrared transmission filters with phase change materials WO2018204478A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112068234A (en) * 2020-09-10 2020-12-11 天津津航技术物理研究所 Intelligent protection narrowband optical filter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110038093A1 (en) * 2008-04-18 2011-02-17 Nxp B.V. Turnable capacitor and switch using mems with phase change material
WO2015097468A1 (en) * 2013-12-23 2015-07-02 Isis Innovation Limited Display device based on phase-change materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110038093A1 (en) * 2008-04-18 2011-02-17 Nxp B.V. Turnable capacitor and switch using mems with phase change material
WO2015097468A1 (en) * 2013-12-23 2015-07-02 Isis Innovation Limited Display device based on phase-change materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MIQUEL RUDÉ ET AL: "Ultrafast and Broadband Tuning of Resonant Optical Nanostructures Using Phase-Change Materials", ADVANCED OPTICAL MATERIALS, vol. 4, no. 7, 1 July 2016 (2016-07-01), DE, pages 1060 - 1066, XP055498240, ISSN: 2195-1071, DOI: 10.1002/adom.201600079 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112068234A (en) * 2020-09-10 2020-12-11 天津津航技术物理研究所 Intelligent protection narrowband optical filter

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