WO2018184280A1 - Manufacturing method for complementary type tft devices and manufacturing method for oled display panel - Google Patents

Manufacturing method for complementary type tft devices and manufacturing method for oled display panel Download PDF

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Publication number
WO2018184280A1
WO2018184280A1 PCT/CN2017/084606 CN2017084606W WO2018184280A1 WO 2018184280 A1 WO2018184280 A1 WO 2018184280A1 CN 2017084606 W CN2017084606 W CN 2017084606W WO 2018184280 A1 WO2018184280 A1 WO 2018184280A1
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active layer
metal oxide
electrode
oxide semiconductor
film
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PCT/CN2017/084606
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French (fr)
Chinese (zh)
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刘哲
王选芸
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武汉华星光电技术有限公司
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Priority to US15/541,471 priority Critical patent/US10096656B1/en
Publication of WO2018184280A1 publication Critical patent/WO2018184280A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a complementary TFT device and a method for fabricating the OLED display panel.
  • the flat display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing flat display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
  • the organic light-emitting diode display device has the advantages of self-luminescence, no backlight, high contrast, thin thickness, wide viewing angle, fast response speed, flexible panel, wide temperature range, simple structure and simple process. It is considered to be an emerging application technology for next-generation flat panel displays.
  • An OLED display device generally includes a substrate, an anode disposed on the substrate, an organic light-emitting layer disposed on the anode, an electron transport layer disposed on the organic light-emitting layer, and a cathode disposed on the electron transport layer.
  • the holes from the anode and the electrons from the cathode are emitted to the organic light-emitting layer, and these electrons and holes are combined to generate an excited electron-hole pair, and the excited electron-hole pair is converted from the excited state to the ground state. Achieve light.
  • the preparation of electronic films, electronic devices and electronic circuits by solution method has the advantages of simple process, low cost and large area realization.
  • the process of preparing electronic thin films by solution method and the research of electronic devices based on solution method have made great progress, and the performance of various aspects can be compared with or even surpassed the electronic thin films and corresponding electronic devices obtained by the conventional vacuum process.
  • a complementary thin film transistor (TFT) device is composed of a P-type communication thin film transistor and an N-channel communication thin film transistor, and a complementary TFT device is a circuit structure commonly used in a flat panel display.
  • the material of the active layer of the TFT is usually a metal oxide semiconductor, and the manufacturing process is complicated, and a large amount of vacuum equipment and high-temperature equipment are required, and the manufacturing cost is high.
  • An organic thin film transistor is a thin film transistor device using an organic semiconductor material as an active layer.
  • the solution method is a common method for preparing an organic semiconductor thin film transistor, and has the advantages of simple process, low cost, and large area realization.
  • An object of the present invention is to provide a method for fabricating a complementary TFT device, which can reduce product manufacturing cost and enhance product competitiveness.
  • Another object of the present invention is to provide a method for fabricating an OLED display panel, which can reduce product manufacturing cost and enhance product competitiveness.
  • the present invention provides a method of fabricating a complementary TFT device, comprising the steps of:
  • Step 1 providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
  • Step 2 forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
  • Step 3 covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form a via above the first electrode exposing a portion of the first electrode;
  • Step 4 forming a first active layer on the first gate dielectric layer above the first gate;
  • Step 5 forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
  • one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel;
  • the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
  • the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
  • the manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  • the first active layer is an N-type channel metal oxide semiconductor active layer
  • the second active layer is a P-type channel organic semiconductor active layer.
  • the step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P-type organic a thin film of an organic dielectric material on the semiconductor film, and a thin metal covering the film of the organic dielectric material is formed on the film of the organic dielectric material by an evaporation process or a sputtering process a film, patterning the metal film to obtain a second gate, and simultaneously etching the P-type organic semiconductor film and the organic dielectric material film with the second gate as a mask to obtain a second active layer And a second gate dielectric layer.
  • the step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide semiconductor precursor The bulk film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
  • the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated.
  • the thickness uniformity of the oxide semiconductor precursor film is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated.
  • the invention also provides a method for manufacturing an OLED display panel, comprising the following steps:
  • Step 1 ' providing a substrate, forming a first gate, a first electrode, a second electrode, and a capacitor lower electrode plate spaced apart on the substrate;
  • Step 2 ′ forming a second active layer and a second gate sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region a dielectric layer and a second gate;
  • Step 3 ′ covering the first gate dielectric layer on the substrate, the first gate, the first electrode, the second electrode, and the second gate, and patterning the first gate dielectric layer a first via located above the first electrode and a second via above the second gate, the first via and the second via exposing the first and second gates, respectively a part of the pole;
  • Step 4' forming a first active layer on the first gate dielectric layer above the first gate
  • Step 5 ′ forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer and a capacitor upper electrode above the lower electrode plate of the capacitor a fourth electrode is in contact with the first electrode through the first via, and the capacitor upper electrode plate is in contact with the second gate through the second via;
  • Step 6 ′ forming a flat layer on the third electrode, the fourth electrode, the capacitor upper electrode plate, the first active layer, and the first gate dielectric layer, and sequentially forming a pixel electrode on the flat layer, a pixel defining layer, and an organic light emitting layer;
  • one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel;
  • the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
  • the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide Semiconductor film Metal oxide semiconductor film is patterned to form a metal oxide semiconductor active layer;
  • the manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  • the first active layer is an N-type channel metal oxide semiconductor active layer
  • the second active layer is a P-type channel organic semiconductor active layer.
  • the step 2 ′ specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P-type a thin film of an organic dielectric material on the organic semiconductor film, a metal film covering the film of the organic dielectric material is formed on the film of the organic dielectric material by an evaporation process or a sputtering process, and the metal film is patterned to obtain a film
  • the second gate is used as a mask to simultaneously dry-etch the P-type organic semiconductor film and the organic dielectric material film to obtain a second active layer and a second gate dielectric layer.
  • the step 4 ′ specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide semiconductor The precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
  • the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated.
  • the thickness uniformity of the oxide semiconductor precursor film is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated.
  • the invention also provides a method for fabricating a complementary TFT device, comprising the following steps:
  • Step 1 providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
  • Step 2 forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
  • Step 3 covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form a via above the first electrode exposing a portion of the first electrode;
  • Step 4 forming a first active layer on the first gate dielectric layer above the first gate;
  • Step 5 forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
  • one of the first active layer and the second active layer is an active layer of an N-type channel, The other is an active layer of a P-type channel; one of the first active layer and the second active layer is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
  • the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
  • the manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor.
  • Source layer
  • the first active layer is an N-type channel metal oxide semiconductor active layer
  • the second active layer is a P-type channel organic semiconductor active layer
  • the step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P Forming an organic dielectric material film on the organic semiconductor film, forming a metal film covering the organic dielectric material film on the organic dielectric material film by an evaporation process or a sputtering process, and patterning the metal film a second gate, the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate as a mask to obtain a second active layer and a second gate dielectric layer;
  • the step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide The semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
  • the present invention provides a method of fabricating a complementary TFT device, which is capable of continuously fabricating a metal oxide semiconductor thin film transistor and an organic semiconductor thin film transistor by a solution method, the metal oxide The semiconductor thin film transistor and the organic semiconductor thin film transistor are electrically connected, and one of the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor is an N-channel thin film transistor, and the other is a P-channel thin film transistor, capable of Reduce the use of vacuum equipment and high-temperature equipment, make full use of the large-area realization and low-cost advantages of the solution method, reduce the production cost of products, and enhance the competitiveness of products.
  • the invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.
  • the invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.
  • FIG. 1 is a schematic view showing a step 1 of a method of fabricating a complementary TFT device of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating a complementary TFT device of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating a complementary TFT device of the present invention
  • step 4 is a schematic diagram of step 4 of a method for fabricating a complementary TFT device of the present invention.
  • step 5 is a schematic diagram of step 5 of a method for fabricating a complementary TFT device of the present invention.
  • FIG. 6 is a schematic diagram of a step 1' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 7 is a schematic diagram of a step 2' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 8 is a schematic diagram of a step 3' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 9 is a schematic view showing a step 4' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 10 is a schematic diagram of a step 5' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 11 is a schematic diagram of a step 6' of a method of fabricating an OLED display panel of the present invention.
  • FIG. 12 is a flow chart showing a method of fabricating a complementary TFT device of the present invention.
  • FIG. 13 is a flow chart of a method of fabricating an OLED display panel of the present invention.
  • the present invention provides a method for fabricating a complementary TFT device, including the following steps:
  • Step 1 Referring to FIG. 1, a substrate 1 is provided. A first gate electrode 11, a first electrode 21, and a second electrode 22 are formed on the substrate 1.
  • a metal thin film is formed on the substrate 1 by evaporation or sputtering, and then the metal thin film is patterned to obtain the first gate electrode 11, the first electrode 21, and
  • the second electrode 22 the material of the metal thin film is preferably one or a combination of metals such as aluminum, molybdenum, and copper.
  • Step 2 referring to FIG. 2, a spacer layer is formed between the first electrode 21 and the second electrode 22, and a portion of the first electrode 21 and the second electrode 22 adjacent to the spacer region is sequentially formed.
  • Step 3 referring to FIG. 3, covering the substrate 1, the first gate 11, the first electrode 21, the second electrode 22, and the second gate 25 with a first gate dielectric layer 12, a gate dielectric layer 12 performing patterning to form a via hole 26 above the first electrode 21 to expose a portion of the first electrode 21;
  • Step 4 Referring to FIG. 4, a first active layer 13 is formed on the first gate dielectric layer 12 above the first gate 11.
  • Step 5 referring to FIG. 5, forming a third electrode 14 and a fourth electrode 15 respectively contacting the two ends of the first active layer 13 and spaced apart from each other on the first gate dielectric layer 12, The fourth electrode 15 is in contact with the first electrode 21 through the via hole 26.
  • the first gate 11, the first active layer 13, the third electrode 14, and the fourth electrode 15 constitute a first thin film transistor.
  • the third electrode 14 and the fourth electrode 15 are respectively a source and a drain of the first thin film transistor;
  • the second gate 25, the second active layer 23, the first electrode 21, and the second electrode 22 constitute a second thin film transistor, optionally, the An electrode 21 and a second electrode 22 are respectively a source and a drain of the second thin film transistor.
  • one of the first active layer 13 and the second active layer 23 is an active layer of an N-type channel, and the other is a P.
  • the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor film in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form A metal oxide semiconductor thin film is patterned to form a metal oxide semiconductor active layer.
  • the metal oxide semiconductor precursor solution is provided in the metal oxide semiconductor active layer by a coating or spin coating method in the above process.
  • the manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  • the organic semiconductor solution is disposed in a region to be formed of the organic semiconductor active layer by a coating or spin coating method in the above process.
  • the first active layer 13 is an N-type channel metal oxide semiconductor active layer
  • the second active layer 23 is a P-type channel organic semiconductor active layer.
  • the step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate 1, the first gate 11, the first electrode 21, and the second electrode 22 by a solution coating and baking process, and a thin film of an organic dielectric material laminated on the P-type organic semiconductor film, followed by forming an overlay organic layer on the organic dielectric material film by an evaporation process or a sputtering process a metal thin film of a thin film of an electrical material, followed by patterning the metal thin film to obtain a second gate electrode 25, and finally using the second gate electrode 25 as a mask for simultaneously coating the P-type organic semiconductor film and the organic dielectric material film Dry etching is performed to obtain a second active layer 23 and a second gate dielectric layer 24.
  • the organic semiconductor film and the organic dielectric material film are both produced by a solution coating and a baking curing process.
  • the step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer 12 to form an N-type metal oxide semiconductor precursor film, and then performing the N-type The metal oxide semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and finally the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer 13.
  • the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in an organic solvent such as nitrile, and is also controlled by an ethylene glycol solvent when the N-type metal oxide semiconductor precursor solution is coated.
  • the thickness of the formed N-type metal oxide semiconductor precursor film is uniform.
  • the metal halide may be indium trichloride (InCl 3 ), and the metal oxide semiconductor may include indium (In).
  • a metal oxide semiconductor of a metal element such as gallium (Ga), zinc (Zn) or tin (Sn).
  • the process of patterning the N-type metal oxide semiconductor film includes exposure, development, and etching.
  • the second active layer 23 is a P-type organic organic layer.
  • the technical solution of the semiconductor active layer, the present invention is equally applicable to the organic active semiconductor layer in which the first active layer 13 is a P-type channel and the organic layer in which the second active layer 23 is an N-type channel.
  • a semiconductor active layer, the second active layer 23 is a P-type metal oxide semiconductor active layer, and the first active layer 13 is an N-type organic semiconductor active layer, the first The two active layers 23 are a metal oxide semiconductor active layer of an N-type channel and the first active layer 13 is a P-type organic semiconductor active layer.
  • the present invention further provides a method for fabricating an OLED display panel.
  • the OLED display panel includes the above-mentioned complementary TFT device, and the manufacturing process specifically includes the following steps:
  • Step 1 ⁇ a substrate 10 is provided on which a first gate electrode 110 , a first electrode 210 , a second electrode 220 , and a capacitor lower electrode plate 310 are formed on the substrate 10 .
  • a metal thin film is formed on the substrate 10 by evaporation or sputtering, and then the metal thin film is patterned to obtain the first gate 110 and the first electrode 210.
  • the material of the metal thin film is preferably one or a combination of metals such as aluminum, molybdenum and copper.
  • the OLED display panel is a flexible OLED display panel
  • the substrate 10 The invention includes a glass substrate 101 and a flexible substrate 102 disposed on the glass substrate 101.
  • Step 2 ′ referring to FIG. 7 , a spacer region between the first electrode 210 and the second electrode 220 and a portion of the first electrode 210 and the second electrode 220 adjacent to the spacer region are sequentially stacked.
  • the second active layer 230, the second gate dielectric layer 240, and the second gate 250 are sequentially stacked.
  • Step 3 ′ referring to FIG. 8 , covering the substrate 10 , the first gate 110 , the first electrode 210 , the second electrode 220 , and the second gate 250 with a first gate dielectric layer 120
  • the first gate dielectric layer 120 is patterned to form a first via 260 above the first electrode 210 and a second via 270 above the second gate 250, the first via 260 And the second via 270 exposes a portion of the first electrode 210 and the second gate 250, respectively.
  • Step 4 ′ referring to FIG. 9 , a first active layer 130 is formed on the first gate dielectric layer 120 above the first gate 110 .
  • Step 5 ′ referring to FIG. 10 , forming third and second electrodes 140 and a fourth electrode 150 respectively contacting the two ends of the first active layer 130 and spaced apart from each other on the first gate dielectric layer 120 and a capacitor upper electrode plate 320 above the capacitor lower electrode plate 310, the fourth electrode 150 is in contact with the first electrode 210 through the first via hole 260, and the capacitor upper electrode plate 320 passes through the second via hole 270 Contact with the second gate 250.
  • Step 6 ′ referring to FIG. 11 , forming a flat layer 400 on the third electrode 140 , the fourth electrode 150 , the capacitor upper electrode plate 320 , the first active layer 130 , and the first gate dielectric layer 120 , A pixel electrode 500, a pixel defining layer 600, and an organic light emitting layer 700 are sequentially formed on the flat layer 400.
  • the planarization layer 400 specifically includes: an inorganic passivation layer and an organic planarization layer disposed in a stacked manner, and the pixel electrode 500 is in contact with the third electrode 140 through a via hole penetrating through the planarization layer 400, the pixel definition A layer 600 corresponding to the pixel electrode 500 is formed with a recess exposing the pixel electrode 500.
  • the organic light emitting layer 700 is formed in the recess and is in contact with the pixel electrode 500.
  • the organic light emitting layer 700 is disposed on the organic light emitting layer 700.
  • An encapsulation layer (not shown) is also formed.
  • the first gate 11, the first active layer 13, the third electrode 14, and the fourth electrode 15 constitute a first thin film transistor.
  • the third electrode 14 and the fourth electrode 15 are respectively a source and a drain of the first thin film transistor;
  • the second gate 25, the second active layer 23, the first electrode 21, and the second electrode 22 constitute a second thin film transistor, optionally, the An electrode 21 and a second electrode 22 are respectively a source and a drain of the second thin film transistor;
  • the capacitor upper electrode plate 320 and the capacitor lower electrode plate 310 constitute a storage capacitor.
  • one of the first active layer 130 and the second active layer 230 is an active layer of an N-type channel, and the other is an active layer of a P-type channel;
  • One of the source layer 130 and the second active layer 230 is a metal oxide semiconductor active layer, and the other is an organic semiconductor. Active layer.
  • the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor film in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form A metal oxide semiconductor thin film is patterned to form a metal oxide semiconductor active layer.
  • the metal oxide semiconductor precursor solution is provided in the metal oxide semiconductor active layer by a coating or spin coating method in the above process.
  • the manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  • the organic semiconductor solution is disposed in a region to be formed of the organic semiconductor active layer by a coating or spin coating method in the above process.
  • the first active layer 130 is an N-type channel metal oxide semiconductor active layer
  • the second active layer 230 is a P-type channel organic semiconductor active layer.
  • the step 2 ′ specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate 10 , the first gate 110 , the first electrode 210 , and the second electrode 220 by a solution coating and baking process, And an organic dielectric material film laminated on the P-type organic semiconductor film, and then forming a metal film covering the organic dielectric material film on the organic dielectric material film by an evaporation process or a sputtering process, and then The metal film is patterned to obtain a second gate 250, and finally the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate 250 as a mask to obtain a second active layer. 230 and a second gate dielectric layer 240.
  • the organic semiconductor film and the organic dielectric material film are both produced by a solution coating and a baking curing process.
  • the step 4 ′ specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer 120 to form an N-type metal oxide semiconductor precursor film, and then oxidizing the N-type metal The semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and finally the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer 130.
  • the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in an organic solvent such as nitrile, and is also controlled by an ethylene glycol solvent when the N-type metal oxide semiconductor precursor solution is coated.
  • the thickness of the formed N-type metal oxide semiconductor precursor film is uniform.
  • the metal halide may be indium trichloride (InCl 3 ), and the metal oxide semiconductor may include indium (In).
  • a metal oxide semiconductor of a metal element such as gallium (Ga), zinc (Zn) or tin (Sn).
  • the process of patterning the N-type metal oxide semiconductor film includes exposure, development, and etching.
  • the second active layer 230 is a P-type channel organic
  • the technical solution of the semiconductor active layer, the present invention is equally applicable to the organic active semiconductor layer in which the first active layer 130 is a P-type channel and the organic layer in which the second active layer 230 is an N-type channel.
  • a semiconductor active layer, the second active layer 230 is a P-type metal oxide semiconductor active layer, and the first active layer 130 is an N-type organic semiconductor active layer, the The two active layers 230 are a metal oxide semiconductor active layer of an N-type channel and the first active layer 13 is a P-type organic semiconductor active layer.
  • the present invention provides a method of fabricating a complementary TFT device in which a metal oxide semiconductor thin film transistor and an organic semiconductor thin film transistor are continuously formed by a solution method, the metal oxide The semiconductor thin film transistor and the organic semiconductor thin film transistor are electrically connected, and one of the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor is an N-channel thin film transistor, and the other is a P-channel thin film transistor, which can be reduced
  • the use of vacuum equipment and high-temperature equipment makes full use of the large-area realization and low-cost advantages of the solution method, reducing product manufacturing costs and enhancing product competitiveness.
  • the invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.
  • the invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.

Abstract

A manufacturing method for complementary type TFT devices and a manufacturing method for an OLED display panel. The manufacture method for the complementary type TFT devices continuously manufactures a metal oxide semiconductor thin film transistor and an organic semiconductor thin film transistor by using a solution method; the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor are electrically connected; one of the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor is a N-channel thin film transistor, and the other one is a P-channel thin film transistor; therefore, the use of vacuum devices and high-temperature devices can be reduced; the advantages of capable of being complemented in a large area and low cost of the solution method are fully utilized; manufacture cost of products is reduced; and product competitiveness is improved. The manufacturing method for the OLED display panel can reduced the manufacture cost of the products and improve product competitiveness.

Description

互补型TFT器件的制作方法及OLED显示面板的制作方法Complementary TFT device manufacturing method and OLED display panel manufacturing method 技术领域Technical field
本发明涉及显示技术领域，尤其涉及一种互补型TFT器件的制作方法及OLED显示面板的制作方法。The present invention relates to the field of display technologies, and in particular, to a method for fabricating a complementary TFT device and a method for fabricating the OLED display panel.
背景技术Background technique
平面显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机发光二极管显示器件(Organic Light Emitting Display，OLED)。The flat display device has many advantages such as thin body, power saving, no radiation, and has been widely used. The existing flat display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
有机发光二极管显示器件由于同时具备自发光，不需背光源、对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异特性，被认为是下一代平面显示器的新兴应用技术。The organic light-emitting diode display device has the advantages of self-luminescence, no backlight, high contrast, thin thickness, wide viewing angle, fast response speed, flexible panel, wide temperature range, simple structure and simple process. It is considered to be an emerging application technology for next-generation flat panel displays.
OLED显示装置通常包括：基板、设于基板上的阳极、设于阳极上的有机发光层，设于有机发光层上的电子传输层、及设于电子传输层上的阴极。工作时向有机发光层发射来自阳极的空穴和来自阴极的电子，将这些电子和空穴组合产生激发性电子-空穴对，并将激发性电子-空穴对从受激态转换为基态实现发光。An OLED display device generally includes a substrate, an anode disposed on the substrate, an organic light-emitting layer disposed on the anode, an electron transport layer disposed on the organic light-emitting layer, and a cathode disposed on the electron transport layer. Working, the holes from the anode and the electrons from the cathode are emitted to the organic light-emitting layer, and these electrons and holes are combined to generate an excited electron-hole pair, and the excited electron-hole pair is converted from the excited state to the ground state. Achieve light.
溶液法制备电子薄膜、电子器件及电子电路，具有工艺简单、成本低及可大面积实现等优点。近年来，溶液法制备电子薄膜的工艺及基于溶液法的电子器件的研究能取得了长足的进步，多个方面的性能可以比拟甚至超越传统利用真空制程得到的电子薄膜及对应的电子器件。The preparation of electronic films, electronic devices and electronic circuits by solution method has the advantages of simple process, low cost and large area realization. In recent years, the process of preparing electronic thin films by solution method and the research of electronic devices based on solution method have made great progress, and the performance of various aspects can be compared with or even surpassed the electronic thin films and corresponding electronic devices obtained by the conventional vacuum process.
互补型薄膜晶体管(Thin Film Transistor，TFT)器件由P型沟通薄膜晶体管以及N型沟道沟通薄膜晶体管共同构成，互补型TFT器件是平板显示器中常用的一种电路结构。目前的互补型TFT器件中TFT有源层的材料通常是金属氧化物半导体，其制作过程复杂，需要使用大量的真空设备和高温设备，制作成本高。A complementary thin film transistor (TFT) device is composed of a P-type communication thin film transistor and an N-channel communication thin film transistor, and a complementary TFT device is a circuit structure commonly used in a flat panel display. In the current complementary TFT device, the material of the active layer of the TFT is usually a metal oxide semiconductor, and the manufacturing process is complicated, and a large amount of vacuum equipment and high-temperature equipment are required, and the manufacturing cost is high.
有机半导体薄膜晶体管(Organic Thin Film Transistor，OTFT)是一种用有机半导体材料作为有源层的薄膜晶体管器件。溶液法是制备有机半导体薄膜晶体管的常用方法，具有工艺简单、成本低及可大面积实现等优点。An organic thin film transistor (OTFT) is a thin film transistor device using an organic semiconductor material as an active layer. The solution method is a common method for preparing an organic semiconductor thin film transistor, and has the advantages of simple process, low cost, and large area realization.
发明内容Summary of the invention
本发明的目的在于提供一种互补型TFT器件的制作方法，能够降低产品制作成本，提升产品竞争力。An object of the present invention is to provide a method for fabricating a complementary TFT device, which can reduce product manufacturing cost and enhance product competitiveness.
本发明的目的还在于提供一种OLED显示面板的制作方法，能够降低产品制作成本，提升产品竞争力。Another object of the present invention is to provide a method for fabricating an OLED display panel, which can reduce product manufacturing cost and enhance product competitiveness.
为实现上述目的，本发明提供了一种互补型TFT器件的制作方法，包括如下步骤：To achieve the above object, the present invention provides a method of fabricating a complementary TFT device, comprising the steps of:
步骤1、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极以及第二电极； Step 1, providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
步骤2、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2, forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
步骤3、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一电极上方的过孔，暴露出所述第一电极的一部分；Step 3: covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form a via above the first electrode exposing a portion of the first electrode;
步骤4、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4, forming a first active layer on the first gate dielectric layer above the first gate;
步骤5、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极，所述第四电极通过所述过孔与第一电极接触；Step 5, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel; the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层。The first active layer is an N-type channel metal oxide semiconductor active layer, and the second active layer is a P-type channel organic semiconductor active layer.
所述步骤2具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄 膜，对所述金属薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层。The step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P-type organic a thin film of an organic dielectric material on the semiconductor film, and a thin metal covering the film of the organic dielectric material is formed on the film of the organic dielectric material by an evaporation process or a sputtering process a film, patterning the metal film to obtain a second gate, and simultaneously etching the P-type organic semiconductor film and the organic dielectric material film with the second gate as a mask to obtain a second active layer And a second gate dielectric layer.
所述步骤4具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide semiconductor precursor The bulk film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
所述N型金属氧化物半导体前驱体溶液为溶解在已腈溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性。The N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated. The thickness uniformity of the oxide semiconductor precursor film.
本发明还提供一种OLED显示面板的制作方法，包括如下步骤：The invention also provides a method for manufacturing an OLED display panel, comprising the following steps:
步骤1’、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极、第二电极、以及电容下电极板；Step 1 ', providing a substrate, forming a first gate, a first electrode, a second electrode, and a capacitor lower electrode plate spaced apart on the substrate;
步骤2’、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2 ′, forming a second active layer and a second gate sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region a dielectric layer and a second gate;
步骤3’、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一电极上方的第一过孔以及位于所述第二栅极上方的第二过孔，所述第一过孔和第二过孔分别暴露出所述第一电极和第二栅极的一部分；Step 3 ′, covering the first gate dielectric layer on the substrate, the first gate, the first electrode, the second electrode, and the second gate, and patterning the first gate dielectric layer a first via located above the first electrode and a second via above the second gate, the first via and the second via exposing the first and second gates, respectively a part of the pole;
步骤4’、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4', forming a first active layer on the first gate dielectric layer above the first gate;
步骤5’、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极以及位于所述电容下电极板上方的电容上电极板，所述第四电极通过所述第一过孔与第一电极接触，所述电容上电极板通过第二过孔与所述第二栅极接触；Step 5 ′, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer and a capacitor upper electrode above the lower electrode plate of the capacitor a fourth electrode is in contact with the first electrode through the first via, and the capacitor upper electrode plate is in contact with the second gate through the second via;
步骤6’、在所述第三电极、第四电极、电容上电极板、第一有源层、以及第一栅极介电层上形成平坦层，在所述平坦层上依次形成像素电极、像素定义层、以及有机发光层；Step 6 ′, forming a flat layer on the third electrode, the fourth electrode, the capacitor upper electrode plate, the first active layer, and the first gate dielectric layer, and sequentially forming a pixel electrode on the flat layer, a pixel defining layer, and an organic light emitting layer;
其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel; the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述 金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide Semiconductor film Metal oxide semiconductor film is patterned to form a metal oxide semiconductor active layer;
所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层。The first active layer is an N-type channel metal oxide semiconductor active layer, and the second active layer is a P-type channel organic semiconductor active layer.
所述步骤2’具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，对所述金属薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层。The step 2 ′ specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P-type a thin film of an organic dielectric material on the organic semiconductor film, a metal film covering the film of the organic dielectric material is formed on the film of the organic dielectric material by an evaporation process or a sputtering process, and the metal film is patterned to obtain a film The second gate is used as a mask to simultaneously dry-etch the P-type organic semiconductor film and the organic dielectric material film to obtain a second active layer and a second gate dielectric layer.
所述步骤4’具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The step 4 ′ specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide semiconductor The precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
所述N型金属氧化物半导体前驱体溶液为溶解在已腈溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性。The N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is also controlled by an ethylene glycol solvent to form an N-type metal when the N-type metal oxide semiconductor precursor solution is coated. The thickness uniformity of the oxide semiconductor precursor film.
本发明还提供一种互补型TFT器件的制作方法，包括如下步骤：The invention also provides a method for fabricating a complementary TFT device, comprising the following steps:
步骤1、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极以及第二电极； Step 1, providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
步骤2、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2, forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
步骤3、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一电极上方的过孔，暴露出所述第一电极的一部分；Step 3: covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form a via above the first electrode exposing a portion of the first electrode;
步骤4、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4, forming a first active layer on the first gate dielectric layer above the first gate;
步骤5、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极，所述第四电极通过所述过孔与第一电极接触；Step 5, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层， 另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, The other is an active layer of a P-type channel; one of the first active layer and the second active layer is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层；The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer
其中，所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层；Wherein the first active layer is an N-type channel metal oxide semiconductor active layer, and the second active layer is a P-type channel organic semiconductor active layer;
其中，所述步骤2具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，对所述金属薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层；The step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P Forming an organic dielectric material film on the organic semiconductor film, forming a metal film covering the organic dielectric material film on the organic dielectric material film by an evaporation process or a sputtering process, and patterning the metal film a second gate, the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate as a mask to obtain a second active layer and a second gate dielectric layer;
其中，所述步骤4具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide The semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
本发明的有益效果：本发明提供一种互补型TFT器件的制作方法，该互补型TFT器件的制作方法通过溶液法连续制作一金属氧化物半导体薄膜晶体管和一有机半导体薄膜晶体管，所述金属氧化物半导体薄膜晶体管和有机半导体薄膜晶体管电性连接，且该金属氧化物半导体薄膜晶体管和有机半导体薄膜晶体管中的一个为N型沟道的薄膜晶体管，另一个为P型沟道的薄膜晶体管，能够减少真空设备和高温设备的使用，充分利用溶液法的可大面积实现和低成本的优势，降低产品制作成本，提升产品竞争力。本发明还提供一种OLED显示面板的制作方法，能够降低产品制作成本，提升产品竞争力。本发明还提供一种OLED显示面板的制作方法，能够降低产品制作成本，提升产品竞争力。Advantageous Effects of Invention The present invention provides a method of fabricating a complementary TFT device, which is capable of continuously fabricating a metal oxide semiconductor thin film transistor and an organic semiconductor thin film transistor by a solution method, the metal oxide The semiconductor thin film transistor and the organic semiconductor thin film transistor are electrically connected, and one of the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor is an N-channel thin film transistor, and the other is a P-channel thin film transistor, capable of Reduce the use of vacuum equipment and high-temperature equipment, make full use of the large-area realization and low-cost advantages of the solution method, reduce the production cost of products, and enhance the competitiveness of products. The invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product. The invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.
附图说明 DRAWINGS
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。The detailed description of the present invention and the accompanying drawings are to be understood,
附图中，In the drawings,
图1为本发明的互补型TFT器件的制作方法的步骤1的示意图；1 is a schematic view showing a step 1 of a method of fabricating a complementary TFT device of the present invention;
图2为本发明的互补型TFT器件的制作方法的步骤2的示意图；2 is a schematic diagram of step 2 of a method for fabricating a complementary TFT device of the present invention;
图3为本发明的互补型TFT器件的制作方法的步骤3的示意图；3 is a schematic diagram of step 3 of a method for fabricating a complementary TFT device of the present invention;
图4为本发明的互补型TFT器件的制作方法的步骤4的示意图；4 is a schematic diagram of step 4 of a method for fabricating a complementary TFT device of the present invention;
图5为本发明的互补型TFT器件的制作方法的步骤5的示意图；5 is a schematic diagram of step 5 of a method for fabricating a complementary TFT device of the present invention;
图6为本发明的OLED显示面板的制作方法的步骤1’的示意图；6 is a schematic diagram of a step 1' of a method of fabricating an OLED display panel of the present invention;
图7为本发明的OLED显示面板的制作方法的步骤2’的示意图；7 is a schematic diagram of a step 2' of a method of fabricating an OLED display panel of the present invention;
图8为本发明的OLED显示面板的制作方法的步骤3’的示意图；8 is a schematic diagram of a step 3' of a method of fabricating an OLED display panel of the present invention;
图9为本发明的OLED显示面板的制作方法的步骤4’的示意图；9 is a schematic view showing a step 4' of a method of fabricating an OLED display panel of the present invention;
图10为本发明的OLED显示面板的制作方法的步骤5’的示意图；10 is a schematic diagram of a step 5' of a method of fabricating an OLED display panel of the present invention;
图11为本发明的OLED显示面板的制作方法的步骤6’的示意图；11 is a schematic diagram of a step 6' of a method of fabricating an OLED display panel of the present invention;
图12为本发明的互补型TFT器件的制作方法的流程图；12 is a flow chart showing a method of fabricating a complementary TFT device of the present invention;
图13为本发明的OLED显示面板的制作方法的流程图。13 is a flow chart of a method of fabricating an OLED display panel of the present invention.
具体实施方式detailed description
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。In order to further clarify the technical means and effects of the present invention, the following detailed description will be made in conjunction with the preferred embodiments of the invention and the accompanying drawings.
请参阅图12，本发明提供一种互补型TFT器件的制作方法，包括如下步骤：Referring to FIG. 12, the present invention provides a method for fabricating a complementary TFT device, including the following steps:
步骤1、请参阅图1，提供一基板1，在所述基板1上形成间隔分布的第一栅极11、第一电极21以及第二电极22。 Step 1. Referring to FIG. 1, a substrate 1 is provided. A first gate electrode 11, a first electrode 21, and a second electrode 22 are formed on the substrate 1.
具体地，所述步骤1中先在所述基板1上通过蒸镀或溅射形成一金属薄膜，随后对所述金属薄膜进行图案化，得到所述第一栅极11、第一电极21以及第二电极22，所述金属薄膜的材料优选为铝、钼以及铜等金属中的一种或多种组合。Specifically, in the step 1, a metal thin film is formed on the substrate 1 by evaporation or sputtering, and then the metal thin film is patterned to obtain the first gate electrode 11, the first electrode 21, and The second electrode 22, the material of the metal thin film is preferably one or a combination of metals such as aluminum, molybdenum, and copper.
步骤2、请参阅图2，在所述第一电极21以及第二电极22之间的间隔区域、以及第一电极21和第二电极22邻近所述间隔区域的部分上形成依次层叠的第二有源层23、第二栅极介电层24、以及第二栅极25。Step 2, referring to FIG. 2, a spacer layer is formed between the first electrode 21 and the second electrode 22, and a portion of the first electrode 21 and the second electrode 22 adjacent to the spacer region is sequentially formed. The active layer 23, the second gate dielectric layer 24, and the second gate 25.
步骤3、请参阅图3，在所述基板1、第一栅极11、第一电极21、第二电极22、第二栅极25上覆盖第一栅极介电层12，对所述第一栅极介电层 12进行图案化形成位于所述第一电极21上方的过孔26，暴露出所述第一电极21的一部分；Step 3, referring to FIG. 3, covering the substrate 1, the first gate 11, the first electrode 21, the second electrode 22, and the second gate 25 with a first gate dielectric layer 12, a gate dielectric layer 12 performing patterning to form a via hole 26 above the first electrode 21 to expose a portion of the first electrode 21;
步骤4、请参阅图4，在所述第一栅极11上方的第一栅极介电层12上形成第一有源层13。Step 4 Referring to FIG. 4, a first active layer 13 is formed on the first gate dielectric layer 12 above the first gate 11.
步骤5、请参阅图5，在所述第一栅极介电层12上形成分别与所述第一有源层13的两端接触且相互间隔的第三电极14和第四电极15，所述第四电极15通过所述过孔26与第一电极21接触。Step 5, referring to FIG. 5, forming a third electrode 14 and a fourth electrode 15 respectively contacting the two ends of the first active layer 13 and spaced apart from each other on the first gate dielectric layer 12, The fourth electrode 15 is in contact with the first electrode 21 through the via hole 26.
具体地，所述第一栅极11、第一有源层13、第三电极14和第四电极15构成第一薄膜晶体管，可选地，所述第三电极14和第四电极15分别为所述第一薄膜晶体管的源极和漏极；所述第二栅极25、第二有源层23、第一电极21和第二电极22构成第二薄膜晶体管，可选地，所述第一电极21和第二电极22分别为所述第二薄膜晶体管的源极和漏极。Specifically, the first gate 11, the first active layer 13, the third electrode 14, and the fourth electrode 15 constitute a first thin film transistor. Optionally, the third electrode 14 and the fourth electrode 15 are respectively a source and a drain of the first thin film transistor; the second gate 25, the second active layer 23, the first electrode 21, and the second electrode 22 constitute a second thin film transistor, optionally, the An electrode 21 and a second electrode 22 are respectively a source and a drain of the second thin film transistor.
需要说明的是，在本发明提供的互补型TFT器件的制作方法中所述第一有源层13与第二有源层23中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层13与第二有源层23中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层。It should be noted that, in the method for fabricating the complementary TFT device provided by the present invention, one of the first active layer 13 and the second active layer 23 is an active layer of an N-type channel, and the other is a P. An active layer of a type channel; one of the first active layer 13 and the second active layer 23 is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer.
重点的是，所述金属氧化物半导体有源层和有机半导体有源层均采用溶液法制作。具体为所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层。优选地，上述过程中采用涂布或旋涂的方法在金属氧化物半导体有源层设置金属氧化物半导体前驱体溶液。It is important that both the metal oxide semiconductor active layer and the organic semiconductor active layer are formed by a solution method. Specifically, the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor film in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form A metal oxide semiconductor thin film is patterned to form a metal oxide semiconductor active layer. Preferably, the metal oxide semiconductor precursor solution is provided in the metal oxide semiconductor active layer by a coating or spin coating method in the above process.
所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。优选地，上述过程中采用涂布或旋涂的方法在有机半导体有源层的待形成区域设置有机半导体溶液。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer. Preferably, the organic semiconductor solution is disposed in a region to be formed of the organic semiconductor active layer by a coating or spin coating method in the above process.
在本发明的优选实施例中，所述第一有源层13为N型沟道的金属氧化物半导体有源层，所述第二有源层23为P型沟道的有机半导体有源层。In a preferred embodiment of the present invention, the first active layer 13 is an N-type channel metal oxide semiconductor active layer, and the second active layer 23 is a P-type channel organic semiconductor active layer. .
此时，所述步骤2具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板1、第一栅极11、第一电极21以及第二电极22的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，接着在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介 电材料薄膜的金属薄膜，随后对所述金属薄膜进行图案化，得到第二栅极25，最后以第二栅极25为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层23和第二栅极介电层24。详细地，所述有机半导体薄膜和有机介电材料薄膜均通过溶液涂布和烘烤固化工艺制得。At this time, the step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate 1, the first gate 11, the first electrode 21, and the second electrode 22 by a solution coating and baking process, and a thin film of an organic dielectric material laminated on the P-type organic semiconductor film, followed by forming an overlay organic layer on the organic dielectric material film by an evaporation process or a sputtering process a metal thin film of a thin film of an electrical material, followed by patterning the metal thin film to obtain a second gate electrode 25, and finally using the second gate electrode 25 as a mask for simultaneously coating the P-type organic semiconductor film and the organic dielectric material film Dry etching is performed to obtain a second active layer 23 and a second gate dielectric layer 24. In detail, the organic semiconductor film and the organic dielectric material film are both produced by a solution coating and a baking curing process.
相应的，所述步骤4具体包括：在所述第一栅极介电层12上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，接着对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，最后对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层13。Correspondingly, the step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer 12 to form an N-type metal oxide semiconductor precursor film, and then performing the N-type The metal oxide semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and finally the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer 13.
进一步地，所述N型金属氧化物半导体前驱体溶液为溶解在已腈等有机溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性，更详细地，所述金属卤化物可以为三氯化铟(InCl3)，所述金属氧化物半导体可以为包含铟(In)、镓(Ga)、锌(Zn)或锡(Sn)等金属元素的金属氧化物半导体。对所述N型金属氧化物半导体薄膜进行图案化的过程包括曝光、显影以及蚀刻。Further, the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in an organic solvent such as nitrile, and is also controlled by an ethylene glycol solvent when the N-type metal oxide semiconductor precursor solution is coated. The thickness of the formed N-type metal oxide semiconductor precursor film is uniform. In more detail, the metal halide may be indium trichloride (InCl 3 ), and the metal oxide semiconductor may include indium (In). A metal oxide semiconductor of a metal element such as gallium (Ga), zinc (Zn) or tin (Sn). The process of patterning the N-type metal oxide semiconductor film includes exposure, development, and etching.
可以理解的是，除了上述实施例中的采用的所述第一有源层13为N型沟道的金属氧化物半导体有源层，所述第二有源层23为P型沟道的有机半导体有源层的技术方案，本发明同样适用于所述第一有源层13为P型沟道的金属氧化物半导体有源层和所述第二有源层23为N型沟道的有机半导体有源层、所述第二有源层23为P型沟道的金属氧化物半导体有源层和所述第一有源层13为N型沟道的有机半导体有源层、所述第二有源层23为N型沟道的金属氧化物半导体有源层和所述第一有源层13为P型沟道的有机半导体有源层的技术方案。It can be understood that, except that the first active layer 13 employed in the above embodiment is an N-type channel metal oxide semiconductor active layer, the second active layer 23 is a P-type organic organic layer. The technical solution of the semiconductor active layer, the present invention is equally applicable to the organic active semiconductor layer in which the first active layer 13 is a P-type channel and the organic layer in which the second active layer 23 is an N-type channel. a semiconductor active layer, the second active layer 23 is a P-type metal oxide semiconductor active layer, and the first active layer 13 is an N-type organic semiconductor active layer, the first The two active layers 23 are a metal oxide semiconductor active layer of an N-type channel and the first active layer 13 is a P-type organic semiconductor active layer.
请参阅图13，本发明还提供一种OLED显示面板的制作方法，所述OLED显示面板包括上述的互补型TFT器件，制作过程具体包括如下步骤：Referring to FIG. 13 , the present invention further provides a method for fabricating an OLED display panel. The OLED display panel includes the above-mentioned complementary TFT device, and the manufacturing process specifically includes the following steps:
步骤1’、请参阅图6，提供一基板10，在所述基板10上形成间隔分布的第一栅极110、第一电极210、第二电极220、以及电容下电极板310。 Step 1 。 Referring to FIG. 6 , a substrate 10 is provided on which a first gate electrode 110 , a first electrode 210 , a second electrode 220 , and a capacitor lower electrode plate 310 are formed on the substrate 10 .
具体地，所述步骤1’中先在所述基板10上通过蒸镀或溅射形成一金属薄膜，随后对所述金属薄膜进行图案化，得到所述第一栅极110、第一电极210、第二电极220、以及电容下电极板310，所述金属薄膜的材料优选为铝、钼以及铜等金属中的一种或多种组合。Specifically, in the step 1 ′, a metal thin film is formed on the substrate 10 by evaporation or sputtering, and then the metal thin film is patterned to obtain the first gate 110 and the first electrode 210. The second electrode 220 and the capacitor lower electrode plate 310. The material of the metal thin film is preferably one or a combination of metals such as aluminum, molybdenum and copper.
优选地，所述OLED显示面板为柔性OLED显示面板，所述基板10 包括：玻璃基板101、以及设于所述玻璃基板101上的柔性基板102。Preferably, the OLED display panel is a flexible OLED display panel, and the substrate 10 The invention includes a glass substrate 101 and a flexible substrate 102 disposed on the glass substrate 101.
步骤2’、请参阅图7，在所述第一电极210以及第二电极220之间的间隔区域、以及第一电极210和第二电极220邻近所述间隔区域的部分上形成依次层叠的第二有源层230、第二栅极介电层240、以及第二栅极250。Step 2 ′, referring to FIG. 7 , a spacer region between the first electrode 210 and the second electrode 220 and a portion of the first electrode 210 and the second electrode 220 adjacent to the spacer region are sequentially stacked. The second active layer 230, the second gate dielectric layer 240, and the second gate 250.
步骤3’、请参阅图8，在所述基板10、第一栅极110、第一电极210、第二电极220、第二栅极250上覆盖第一栅极介电层120，对所述第一栅极介电层120进行图案化形成位于所述第一电极210上方的第一过孔260以及位于所述第二栅极250上方的第二过孔270，所述第一过孔260和第二过孔270分别暴露出所述第一电极210和第二栅极250的一部分。Step 3 ′, referring to FIG. 8 , covering the substrate 10 , the first gate 110 , the first electrode 210 , the second electrode 220 , and the second gate 250 with a first gate dielectric layer 120 The first gate dielectric layer 120 is patterned to form a first via 260 above the first electrode 210 and a second via 270 above the second gate 250, the first via 260 And the second via 270 exposes a portion of the first electrode 210 and the second gate 250, respectively.
步骤4’、请参阅图9，在所述第一栅极110上方的第一栅极介电层120上形成第一有源层130。Step 4 ′, referring to FIG. 9 , a first active layer 130 is formed on the first gate dielectric layer 120 above the first gate 110 .
步骤5’、请参阅图10，在所述第一栅极介电层120上形成分别与所述第一有源层130的两端接触且相互间隔的第三电极140和第四电极150以及位于所述电容下电极板310上方的电容上电极板320，所述第四电极150通过所述第一过孔260与第一电极210接触，所述电容上电极板320通过第二过孔270与所述第二栅极250接触。Step 5 ′, referring to FIG. 10 , forming third and second electrodes 140 and a fourth electrode 150 respectively contacting the two ends of the first active layer 130 and spaced apart from each other on the first gate dielectric layer 120 and a capacitor upper electrode plate 320 above the capacitor lower electrode plate 310, the fourth electrode 150 is in contact with the first electrode 210 through the first via hole 260, and the capacitor upper electrode plate 320 passes through the second via hole 270 Contact with the second gate 250.
步骤6’、请参阅图11，在所述第三电极140、第四电极150、电容上电极板320、第一有源层130、以及第一栅极介电层120上形成平坦层400，在所述平坦层400上依次形成像素电极500、像素定义层600、以及有机发光层700。Step 6 ′, referring to FIG. 11 , forming a flat layer 400 on the third electrode 140 , the fourth electrode 150 , the capacitor upper electrode plate 320 , the first active layer 130 , and the first gate dielectric layer 120 , A pixel electrode 500, a pixel defining layer 600, and an organic light emitting layer 700 are sequentially formed on the flat layer 400.
具体地，所述平坦层400具体包括：层叠设置的无机钝化层及有机平坦层，像素电极500通过贯穿所述平坦层400的一过孔与所述第三电极140接触，所述像素定义层600对应所述像素电极500的区域形成有暴露出像素电极500的凹槽，所述有机发光层700形成于所述凹槽内并与所述像素电极500接触，所述有机发光层700上还形成有封装层(未图示)。Specifically, the planarization layer 400 specifically includes: an inorganic passivation layer and an organic planarization layer disposed in a stacked manner, and the pixel electrode 500 is in contact with the third electrode 140 through a via hole penetrating through the planarization layer 400, the pixel definition A layer 600 corresponding to the pixel electrode 500 is formed with a recess exposing the pixel electrode 500. The organic light emitting layer 700 is formed in the recess and is in contact with the pixel electrode 500. The organic light emitting layer 700 is disposed on the organic light emitting layer 700. An encapsulation layer (not shown) is also formed.
具体地，所述第一栅极11、第一有源层13、第三电极14和第四电极15构成第一薄膜晶体管，可选地，所述第三电极14和第四电极15分别为所述第一薄膜晶体管的源极和漏极；所述第二栅极25、第二有源层23、第一电极21和第二电极22构成第二薄膜晶体管，可选地，所述第一电极21和第二电极22分别为所述第二薄膜晶体管的源极和漏极；所述电容上电极板320和电容下电极板310构成一存储电容。Specifically, the first gate 11, the first active layer 13, the third electrode 14, and the fourth electrode 15 constitute a first thin film transistor. Optionally, the third electrode 14 and the fourth electrode 15 are respectively a source and a drain of the first thin film transistor; the second gate 25, the second active layer 23, the first electrode 21, and the second electrode 22 constitute a second thin film transistor, optionally, the An electrode 21 and a second electrode 22 are respectively a source and a drain of the second thin film transistor; the capacitor upper electrode plate 320 and the capacitor lower electrode plate 310 constitute a storage capacitor.
需要说明的是，所述第一有源层130与第二有源层230中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层130与第二有源层230中的一个为金属氧化物半导体有源层，另一个为有机半导体 有源层。It should be noted that one of the first active layer 130 and the second active layer 230 is an active layer of an N-type channel, and the other is an active layer of a P-type channel; One of the source layer 130 and the second active layer 230 is a metal oxide semiconductor active layer, and the other is an organic semiconductor. Active layer.
重点的是，所述金属氧化物半导体有源层和有机半导体有源层均采用溶液法制作。具体为所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层。优选地，上述过程中采用涂布或旋涂的方法在金属氧化物半导体有源层设置金属氧化物半导体前驱体溶液。It is important that both the metal oxide semiconductor active layer and the organic semiconductor active layer are formed by a solution method. Specifically, the manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor film in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form A metal oxide semiconductor thin film is patterned to form a metal oxide semiconductor active layer. Preferably, the metal oxide semiconductor precursor solution is provided in the metal oxide semiconductor active layer by a coating or spin coating method in the above process.
所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。优选地，上述过程中采用涂布或旋涂的方法在有机半导体有源层的待形成区域设置有机半导体溶液。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer. Preferably, the organic semiconductor solution is disposed in a region to be formed of the organic semiconductor active layer by a coating or spin coating method in the above process.
在本发明的优选实施例中，所述第一有源层130为N型沟道的金属氧化物半导体有源层，所述第二有源层230为P型沟道的有机半导体有源层。In a preferred embodiment of the present invention, the first active layer 130 is an N-type channel metal oxide semiconductor active layer, and the second active layer 230 is a P-type channel organic semiconductor active layer. .
此时，所述步骤2’具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板10、第一栅极110、第一电极210以及第二电极220的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，接着在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，随后对所述金属薄膜进行图案化，得到第二栅极250，最后以第二栅极250为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层230和第二栅极介电层240。详细地，所述有机半导体薄膜和有机介电材料薄膜均通过溶液涂布和烘烤固化工艺制得。In this case, the step 2 ′ specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate 10 , the first gate 110 , the first electrode 210 , and the second electrode 220 by a solution coating and baking process, And an organic dielectric material film laminated on the P-type organic semiconductor film, and then forming a metal film covering the organic dielectric material film on the organic dielectric material film by an evaporation process or a sputtering process, and then The metal film is patterned to obtain a second gate 250, and finally the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate 250 as a mask to obtain a second active layer. 230 and a second gate dielectric layer 240. In detail, the organic semiconductor film and the organic dielectric material film are both produced by a solution coating and a baking curing process.
所述步骤4’具体包括：在所述第一栅极介电层120上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，接着对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，最后对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层130。The step 4 ′ specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer 120 to form an N-type metal oxide semiconductor precursor film, and then oxidizing the N-type metal The semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and finally the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer 130.
进一步地，所述N型金属氧化物半导体前驱体溶液为溶解在已腈等有机溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性，更详细地，所述金属卤化物可以为三氯化铟(InCl3)，所述金属氧化物半导体可以为包含铟(In)、镓(Ga)、锌(Zn)或锡(Sn)等金属 元素的金属氧化物半导体。对所述N型金属氧化物半导体薄膜进行图案化的过程包括曝光、显影以及蚀刻。Further, the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in an organic solvent such as nitrile, and is also controlled by an ethylene glycol solvent when the N-type metal oxide semiconductor precursor solution is coated. The thickness of the formed N-type metal oxide semiconductor precursor film is uniform. In more detail, the metal halide may be indium trichloride (InCl 3 ), and the metal oxide semiconductor may include indium (In). A metal oxide semiconductor of a metal element such as gallium (Ga), zinc (Zn) or tin (Sn). The process of patterning the N-type metal oxide semiconductor film includes exposure, development, and etching.
可以理解的是，除了上述实施例中的采用的所述第一有源层130为N型沟道的金属氧化物半导体有源层，所述第二有源层230为P型沟道的有机半导体有源层的技术方案，本发明同样适用于所述第一有源层130为P型沟道的金属氧化物半导体有源层和所述第二有源层230为N型沟道的有机半导体有源层、所述第二有源层230为P型沟道的金属氧化物半导体有源层和所述第一有源层130为N型沟道的有机半导体有源层、所述第二有源层230为N型沟道的金属氧化物半导体有源层和所述第一有源层13为P型沟道的有机半导体有源层的技术方案。It can be understood that, except that the first active layer 130 employed in the above embodiment is an N-type channel metal oxide semiconductor active layer, the second active layer 230 is a P-type channel organic The technical solution of the semiconductor active layer, the present invention is equally applicable to the organic active semiconductor layer in which the first active layer 130 is a P-type channel and the organic layer in which the second active layer 230 is an N-type channel. a semiconductor active layer, the second active layer 230 is a P-type metal oxide semiconductor active layer, and the first active layer 130 is an N-type organic semiconductor active layer, the The two active layers 230 are a metal oxide semiconductor active layer of an N-type channel and the first active layer 13 is a P-type organic semiconductor active layer.
综上所述，本发明提供一种互补型TFT器件的制作方法，该互补型TFT器件的制作方法通过溶液法连续制作一金属氧化物半导体薄膜晶体管和一有机半导体薄膜晶体管，所述金属氧化物半导体薄膜晶体管和有机半导体薄膜晶体管电性连接，且该金属氧化物半导体薄膜晶体管和有机半导体薄膜晶体管中的一个为N型沟道的薄膜晶体管，另一个为P型沟道的薄膜晶体管，能够减少真空设备和高温设备的使用，充分利用溶液法的可大面积实现和低成本的优势，降低产品制作成本，提升产品竞争力。本发明还提供一种OLED显示面板的制作方法，能够降低产品制作成本，提升产品竞争力。本发明还提供一种OLED显示面板的制作方法，能够降低产品制作成本，提升产品竞争力。In summary, the present invention provides a method of fabricating a complementary TFT device in which a metal oxide semiconductor thin film transistor and an organic semiconductor thin film transistor are continuously formed by a solution method, the metal oxide The semiconductor thin film transistor and the organic semiconductor thin film transistor are electrically connected, and one of the metal oxide semiconductor thin film transistor and the organic semiconductor thin film transistor is an N-channel thin film transistor, and the other is a P-channel thin film transistor, which can be reduced The use of vacuum equipment and high-temperature equipment makes full use of the large-area realization and low-cost advantages of the solution method, reducing product manufacturing costs and enhancing product competitiveness. The invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product. The invention also provides a manufacturing method of the OLED display panel, which can reduce the production cost of the product and enhance the competitiveness of the product.
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。 In the above, various other changes and modifications can be made in accordance with the technical solutions and technical concept of the present invention, and all such changes and modifications are within the scope of the claims of the present invention. .

Claims (12)

  1. 一种互补型TFT器件的制作方法，包括如下步骤：A method for fabricating a complementary TFT device includes the following steps:
    步骤1、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极以及第二电极；Step 1, providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
    步骤2、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2, forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
    步骤3、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一电极上方的过孔，暴露出所述第一电极的一部分；Step 3: covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form a via above the first electrode exposing a portion of the first electrode;
    步骤4、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4, forming a first active layer on the first gate dielectric layer above the first gate;
    步骤5、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极，所述第四电极通过所述过孔与第一电极接触；Step 5, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
    其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel; the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
    所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
    所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  2. 如权利要求1所述的互补型TFT器件的制作方法，其中，所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层。The method of fabricating a complementary TFT device according to claim 1, wherein said first active layer is an N-type channel metal oxide semiconductor active layer, and said second active layer is a P-type channel Organic semiconductor active layer.
  3. 如权利要求2所述的互补型TFT器件的制作方法，其中，所述步骤2具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，对所述金属 薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层。The method of fabricating a complementary TFT device according to claim 2, wherein the step 2 comprises: sequentially forming a substrate, a first gate, a first electrode, and a second layer by a solution coating and baking process. a two-electrode P-type organic semiconductor film, and an organic dielectric material film laminated on the P-type organic semiconductor film, and an organic dielectric material is formed on the organic dielectric material film by an evaporation process or a sputtering process a thin film of metal to the metal The film is patterned to obtain a second gate, and the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate as a mask to obtain a second active layer and a second gate. Electrical layer.
  4. 如权利要求2所述的互补型TFT器件的制作方法，其中，所述步骤4具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The method of fabricating a complementary TFT device according to claim 2, wherein the step 4 comprises: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal An oxide semiconductor precursor film, the N-type metal oxide semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor film, and the N-type metal oxide semiconductor film is patterned to obtain a first active layer .
  5. 如权利要求4所述的互补型TFT器件的制作方法，其中，所述N型金属氧化物半导体前驱体溶液为溶解在已腈溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性。The method of fabricating a complementary TFT device according to claim 4, wherein said N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is coated with an N-type metal oxide. The thickness of the N-type metal oxide semiconductor precursor film formed by the ethylene glycol solvent is also controlled by the semiconductor precursor solution.
  6. 一种OLED显示面板的制作方法，包括如下步骤：A method for manufacturing an OLED display panel includes the following steps:
    步骤1’、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极、第二电极、以及电容下电极板；Step 1 ', providing a substrate, forming a first gate, a first electrode, a second electrode, and a capacitor lower electrode plate spaced apart on the substrate;
    步骤2’、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2 ′, forming a second active layer and a second gate sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region a dielectric layer and a second gate;
    步骤3’、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一电极上方的第一过孔以及位于所述第二栅极上方的第二过孔，所述第一过孔和第二过孔分别暴露出所述第一电极和第二栅极的一部分；Step 3 ′, covering the first gate dielectric layer on the substrate, the first gate, the first electrode, the second electrode, and the second gate, and patterning the first gate dielectric layer a first via located above the first electrode and a second via above the second gate, the first via and the second via exposing the first and second gates, respectively a part of the pole;
    步骤4’、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4', forming a first active layer on the first gate dielectric layer above the first gate;
    步骤5’、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极以及位于所述电容下电极板上方的电容上电极板，所述第四电极通过所述第一过孔与第一电极接触，所述电容上电极板通过第二过孔与所述第二栅极接触；Step 5 ′, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer and a capacitor upper electrode above the lower electrode plate of the capacitor a fourth electrode is in contact with the first electrode through the first via, and the capacitor upper electrode plate is in contact with the second gate through the second via;
    步骤6’、在所述第三电极、第四电极、电容上电极板、第一有源层、以及第一栅极介电层上形成平坦层，在所述平坦层上依次形成像素电极、像素定义层、以及有机发光层；Step 6 ′, forming a flat layer on the third electrode, the fourth electrode, the capacitor upper electrode plate, the first active layer, and the first gate dielectric layer, and sequentially forming a pixel electrode on the flat layer, a pixel defining layer, and an organic light emitting layer;
    其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel; the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
    所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金 属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: setting gold in a region to be formed Forming a metal oxide semiconductor precursor film by an oxide semiconductor precursor solution, annealing the metal oxide semiconductor precursor film to form a metal oxide semiconductor film, and patterning the metal oxide semiconductor film to form a metal oxide Semiconductor active layer;
    所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层。The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer.
  7. 如权利要求6所述的OLED显示面板的制作方法，其中，所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层。The method of fabricating an OLED display panel according to claim 6, wherein the first active layer is an N-type channel metal oxide semiconductor active layer, and the second active layer is a P-type channel Organic semiconductor active layer.
  8. 如权利要求7所述的OLED显示面板的制作方法，其中，所述步骤2’具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，对所述金属薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层。The method of fabricating an OLED display panel according to claim 7, wherein the step 2' comprises: sequentially forming a substrate, a first gate, a first electrode, and a second layer by a solution coating and baking process. a two-electrode P-type organic semiconductor film, and an organic dielectric material film laminated on the P-type organic semiconductor film, and an organic dielectric material is formed on the organic dielectric material film by an evaporation process or a sputtering process a metal film of the film, patterning the metal film to obtain a second gate, and simultaneously etching the P-type organic semiconductor film and the organic dielectric material film with the second gate as a mask to obtain a second An active layer and a second gate dielectric layer.
  9. 如权利要求7所述的OLED显示面板的制作方法，其中，所述步骤4’具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The method of fabricating an OLED display panel according to claim 7, wherein the step 4' comprises: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal; An oxide semiconductor precursor film, the N-type metal oxide semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor film, and the N-type metal oxide semiconductor film is patterned to obtain a first active layer .
  10. 如权利要求9所述的OLED显示面板的制作方法，其中，所述N型金属氧化物半导体前驱体溶液为溶解在已腈溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性。The method of fabricating an OLED display panel according to claim 9, wherein the N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is coated with an N-type metal oxide semiconductor. The thickness of the N-type metal oxide semiconductor precursor film formed by the ethylene glycol solvent is also controlled by the precursor solution.
  11. 一种互补型TFT器件的制作方法，包括如下步骤：A method for fabricating a complementary TFT device includes the following steps:
    步骤1、提供一基板，在所述基板上形成间隔分布的第一栅极、第一电极以及第二电极；Step 1, providing a substrate, forming a first gate, a first electrode and a second electrode spaced apart on the substrate;
    步骤2、在所述第一电极以及第二电极之间的间隔区域、以及第一电极和第二电极邻近所述间隔区域的部分上形成依次层叠的第二有源层、第二栅极介电层、以及第二栅极；Step 2, forming a second active layer and a second gate layer sequentially stacked on the interval region between the first electrode and the second electrode and the portion of the first electrode and the second electrode adjacent to the spacer region An electrical layer and a second gate;
    步骤3、在所述基板、第一栅极、第一电极、第二电极、第二栅极上覆盖第一栅极介电层，对所述第一栅极介电层进行图案化形成位于所述第一 电极上方的过孔，暴露出所述第一电极的一部分；Step 3: covering the substrate, the first gate, the first electrode, the second electrode, and the second gate with a first gate dielectric layer, and patterning the first gate dielectric layer to form The first a via above the electrode exposing a portion of the first electrode;
    步骤4、在所述第一栅极上方的第一栅极介电层上形成第一有源层；Step 4, forming a first active layer on the first gate dielectric layer above the first gate;
    步骤5、在所述第一栅极介电层上形成分别与所述第一有源层接触且相互间隔的第三电极和第四电极，所述第四电极通过所述过孔与第一电极接触；Step 5, forming third and fourth electrodes respectively contacting the first active layer and spaced apart from each other on the first gate dielectric layer, the fourth electrode passing through the via and the first Electrode contact
    其中，所述第一有源层与第二有源层中的一个为N型沟道的有源层，另一个为P型沟道的有源层；所述第一有源层与第二有源层中的一个为金属氧化物半导体有源层，另一个为有机半导体有源层；Wherein one of the first active layer and the second active layer is an active layer of an N-type channel, and the other is an active layer of a P-type channel; the first active layer and the second layer One of the active layers is a metal oxide semiconductor active layer, and the other is an organic semiconductor active layer;
    所述金属氧化物半导体有源层的制作过程包括：在待形成区域设置金属氧化物半导体前驱体溶液形成金属氧化物半导体前驱体薄膜，对所述金属氧化物半导体前驱体薄膜进行退火形成金属氧化物半导体薄膜，对所述金属氧化物半导体薄膜进行图案化形成金属氧化物半导体有源层；The manufacturing process of the metal oxide semiconductor active layer includes: forming a metal oxide semiconductor precursor solution in a region to be formed to form a metal oxide semiconductor precursor film, and annealing the metal oxide semiconductor precursor film to form metal oxide a semiconductor thin film, patterning the metal oxide semiconductor thin film to form a metal oxide semiconductor active layer;
    所述有机半导体有源层的制作过程包括：在待形成区域设置有机半导体溶液，对所述有机半导体溶液经过烘烤后固化得到有机半导体薄膜，对所述有机半导体薄膜进行图案化得到有机半导体有源层；The manufacturing process of the organic semiconductor active layer includes: providing an organic semiconductor solution in a region to be formed, curing the organic semiconductor solution to obtain an organic semiconductor film, and patterning the organic semiconductor film to obtain an organic semiconductor. Source layer
    其中，所述第一有源层为N型沟道的金属氧化物半导体有源层，所述第二有源层为P型沟道的有机半导体有源层；Wherein the first active layer is an N-type channel metal oxide semiconductor active layer, and the second active layer is a P-type channel organic semiconductor active layer;
    其中，所述步骤2具体包括：依次通过溶液涂布和烘烤工艺制作得到覆盖所述基板、第一栅极、第一电极以及第二电极的P型有机半导体薄膜、以及层叠于所述P型有机半导体薄膜上的有机介电材料薄膜，在所述有机介电材料薄膜上通过蒸镀工艺或溅射工艺形成覆盖有机介电材料薄膜的金属薄膜，对所述金属薄膜进行图案化，得到第二栅极，以第二栅极为掩膜板对所述P型有机半导体薄膜和有机介电材料薄膜同时进行干蚀刻，得到第二有源层和第二栅极介电层；The step 2 specifically includes: sequentially preparing a P-type organic semiconductor film covering the substrate, the first gate, the first electrode, and the second electrode by a solution coating and baking process, and laminating the P Forming an organic dielectric material film on the organic semiconductor film, forming a metal film covering the organic dielectric material film on the organic dielectric material film by an evaporation process or a sputtering process, and patterning the metal film a second gate, the P-type organic semiconductor film and the organic dielectric material film are simultaneously dry etched by using the second gate as a mask to obtain a second active layer and a second gate dielectric layer;
    其中，所述步骤4具体包括：在所述第一栅极介电层上涂布N型金属氧化物半导体前驱体溶液形成N型金属氧化物半导体前驱体薄膜，对所述N型金属氧化物半导体前驱体薄膜进行退火，得到N型金属氧化物半导体薄膜，对所述N型金属氧化物半导体薄膜进行图案化得到第一有源层。The step 4 specifically includes: coating an N-type metal oxide semiconductor precursor solution on the first gate dielectric layer to form an N-type metal oxide semiconductor precursor film, and the N-type metal oxide The semiconductor precursor film is annealed to obtain an N-type metal oxide semiconductor thin film, and the N-type metal oxide semiconductor thin film is patterned to obtain a first active layer.
  12. 如权利要求11所述的互补型TFT器件的制作方法，其中，所述N型金属氧化物半导体前驱体溶液为溶解在已腈溶剂中的金属卤化物溶液，并且在涂布N型金属氧化物半导体前驱体溶液时还通过乙二醇溶剂控制形成的N型金属氧化物半导体前驱体薄膜的厚度均一性。 The method of fabricating a complementary TFT device according to claim 11, wherein said N-type metal oxide semiconductor precursor solution is a metal halide solution dissolved in a nitrile solvent, and is coated with an N-type metal oxide. The thickness of the N-type metal oxide semiconductor precursor film formed by the ethylene glycol solvent is also controlled by the semiconductor precursor solution.
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