WO2018179528A1 - Dispositif électroluminescent - Google Patents
Dispositif électroluminescent Download PDFInfo
- Publication number
- WO2018179528A1 WO2018179528A1 PCT/JP2017/036578 JP2017036578W WO2018179528A1 WO 2018179528 A1 WO2018179528 A1 WO 2018179528A1 JP 2017036578 W JP2017036578 W JP 2017036578W WO 2018179528 A1 WO2018179528 A1 WO 2018179528A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- layer
- light
- emitting unit
- electrodes
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 90
- 239000012044 organic layer Substances 0.000 claims abstract description 37
- 238000000295 emission spectrum Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- -1 polyethylene naphthalate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BSUHXFDAHXCSQL-UHFFFAOYSA-N [Zn+2].[W+4].[O-2].[In+3] Chemical compound [Zn+2].[W+4].[O-2].[In+3] BSUHXFDAHXCSQL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Definitions
- the present invention relates to a light emitting device.
- the light emitting unit of this light emitting device has a structure in which an organic light emitting layer is disposed between two electrodes. Depending on the application of the light emitting device, a plurality of light emitting portions having different emission colors may be formed in one light emitting device.
- Patent Document 1 describes that a phosphorescent light emitting material is used as a guest material for a red light emitting portion, and a delayed fluorescent material is used as a guest material for a green light emitting portion.
- Patent Document 2 describes that a first light-emitting layer and a second light-emitting layer having different emission colors are stacked, and one of the first light-emitting layer and the second light-emitting layer is caused to emit light by an applied voltage. Yes.
- a light-emitting device using an organic light-emitting layer when a light-emitting portion is made translucent, a user of the light-emitting device looks at the surroundings through the light-emitting device, and thereby emits light (for example, characters and images) from the light-emitting device. You can try it around.
- the film thickness of each of the light-emitting portions is optimized in accordance with the respective emission color.
- the interference colors may appear to be different from each other in the plurality of light emitting units due to the difference in film thickness of the plurality of light emitting units.
- the invention according to claim 1 includes a first light emitting unit and a second light emitting unit each having an organic layer between electrodes,
- the film thickness between the electrodes of the first light emitting part is 95% or more and 105% or less of the film thickness between the electrodes of the second light emitting part,
- the peak wavelength of the emission spectrum of the first light emitting unit is a light emitting device different from the peak wavelength of the emission spectrum of the second light emitting unit.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is sectional drawing which shows the layer structure of the organic layer which a 1st light emission part has. It is sectional drawing which shows the layer structure of the organic layer which a 2nd light emission part has. It is sectional drawing which shows the modification of FIG.
- FIG. 1 is a plan view showing a configuration of a light emitting device 10 according to the embodiment.
- FIG. 2 is a cross-sectional view taken along the line AA in FIG.
- the light emitting device 10 is, for example, a segment type display device, a display, or a lighting device, and includes a first light emitting unit 140a and a second light emitting unit 140b.
- Each of the first light emitting unit 140a and the second light emitting unit 140b includes an organic layer (120a, 120b) between the electrodes.
- the film thickness between the electrodes of the first light emitting unit 140a is 95% or more and 105% or less of the film thickness between the electrodes of the second light emitting unit 140b.
- the peak wavelength of the emission spectrum of the first light emitting unit 140a is different from the peak wavelength of the emission spectrum of the second light emitting unit 140b.
- the light emitting device 10 will be described in detail.
- the first light emitting unit 140 a and the second light emitting unit 140 b are formed using the substrate 100.
- the light emitting unit 140 is, for example, a bottom emission type, but may be a top emission type or a dual emission type.
- the first light emitting unit 140a and the second light emitting unit 140b are translucent. In other words, the first light emitting unit 140 a and the second light emitting unit 140 b transmit at least visible light in a direction perpendicular to the substrate 100.
- the substrate 100 is formed of a resin material
- an inorganic barrier film such as SiN x or SiON is formed on at least a light emitting surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from passing through the substrate 100. Is preferably formed.
- the substrate 100 may be a substrate (inorganic organic hybrid substrate) having at least one resin layer and at least one inorganic layer.
- substrate 100 does not need to have translucency.
- the substrate 100 may be a metal substrate.
- the first light emitting unit 140a is formed on the first surface 100a of the substrate 100, and has the first electrode 110a, the organic layer 120a, and the second electrode 130a in this order from the first surface 100a side.
- the second light emitting unit 140b is also formed on the first surface 100a of the substrate 100, and has the first electrode 110b, the organic layer 120b, and the second electrode 130b in this order from the first surface 100a side.
- the first electrodes 110a and 110b are formed using the same material, and the second electrodes 130a and 130b are also formed using the same material.
- the first electrodes 110a and 110b and the second electrodes 130a and 130b are all translucent.
- the first electrodes 110a and 110b are formed of a transparent conductive film.
- This transparent conductive film is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide).
- the refractive index of the material of the transparent electrode is, for example, 1.5 or more and 2.2 or less.
- the thickness of the transparent electrode is, for example, 10 nm or more and 500 nm or less.
- the transparent electrode is formed using, for example, a sputtering method or a vapor deposition method.
- the transparent electrode may be a carbon nanotube, a conductive organic material such as PEDOT / PSS, or a thin metal electrode (for example, MgAg alloy, Mg, or Ag).
- the organic layer 120a is located between the first electrode 110a and the second electrode 130a, and has a plurality of layers.
- One of the plurality of layers is a light emitting layer 123a described later.
- Each layer constituting the organic layer 120a is formed by using, for example, a vapor deposition method, but at least a part of the layers may be formed by a coating method.
- the organic layer 120b is located between the first electrode 110b and the second electrode 130b, and has a plurality of layers.
- One of the plurality of layers is a light emitting layer 123b described later.
- Each layer constituting the organic layer 120b is formed by using, for example, a vapor deposition method, but at least a part of the layers may be formed by a coating method.
- the light emitting layer 123b of the organic layer 120b contains a light emitting material different from that of the light emitting layer 123a of the organic layer 120a. For this reason, the emission color of the organic layer 120a is different from the emission color of the organic layer 120b.
- the peak wavelength of the emission spectrum of the first light emitting unit 140a is different from the peak wavelength of the emission spectrum of the second light emitting unit 140b.
- the structure of the organic layer 120a excluding the light emitting layer 123a is preferably the same as the structure of the organic layer 120b excluding the light emitting layer 123b. If it does in this way, except the light emitting layers 123a and 123b, the manufacturing process of the organic layer 120a and the manufacturing process of the organic layer 120b can be made the same.
- the number of layers between the first electrode 110a and the second electrode 130a that is, the number of layers constituting the organic layer 120a
- the number of layers between the first electrode 110b and the second electrode 130b is the same.
- the second electrode 130 is formed of a transparent conductive film, like the first electrodes 110a and 110b.
- This transparent conductive film has any one of the structures exemplified as the transparent conductive film constituting the first electrodes 110a and 110b.
- the second electrode 130 is formed using a thin metal film such as an MgAg alloy or a metal oxide film such as ITO or IZO.
- An insulating film 150 is formed on the first electrodes 110a and 110b.
- the insulating film 150 has an opening in each of a region to be the first light emitting unit 140a and a region to be the second light emitting unit 140b. In other words, the insulating film 150 defines the first light emitting part 140a and the second light emitting part 140b.
- the insulating film 150 is formed using at least one of inorganic materials such as silicon oxide, silicon oxynitride, and silicon nitride.
- the insulating film 150 is formed using a sputtering method. However, the insulating film 150 may be formed using a photosensitive material such as polyimide resin.
- the insulating film 150 is formed using a sputtering method or a CVD method.
- the light emitting device 10 has a light transmitting part 142. At least a part of the light transmitting unit 142 is, for example, a region between the first light emitting unit 140a and the second light emitting unit 140b, and is a region that does not emit light but transmits light. Note that the light transmitting portion 142 may be provided in another region of the substrate 100 (for example, a region surrounding the first light emitting unit 140a and the second light emitting unit 140b).
- the light emitting device 10 may further include a sealing portion (not shown).
- This sealing part may have a configuration in which, for example, an inorganic film is laminated, or may have a metal layer such as an aluminum foil and an adhesive layer, or an adhesive layer may be formed on the above laminated film. You may have the structure which attached metal foil via.
- FIG. 3 is a cross-sectional view showing the layer structure of the organic layer 120a included in the first light emitting unit 140a.
- the organic layer 120a includes a hole injection layer 121a, a hole transport layer 122a, a light emitting layer 123a, an electron transport layer 124a, and an electron injection layer 125a in this order from the first electrode 110a side.
- the organic layer 120a may further include other layers.
- the hole injection layer 121a may be formed using a coating method such as an inkjet method.
- the light emitting layer 123a includes a first host material and a first guest material.
- the first host material is, for example, CBP
- the first guest material is, for example, Ir (piq) 3 .
- FIG. 4 is a cross-sectional view showing the layer structure of the organic layer 120b included in the second light emitting unit 140b.
- the organic layer 120b includes a hole injection layer 121b, a hole transport layer 122b, a light emitting layer 123b, an electron transport layer 124b, and an electron injection layer 125b in this order from the first electrode 110b side.
- the hole injection layer 121b is the same layer as the hole injection layer 121a
- the hole transport layer 122b is the same layer as the hole transport layer 122a
- the electron transport layer 124b is the same layer as the electron transport layer 124a.
- the electron injection layer 125b is the same layer as the electron injection layer 125a.
- the hole injection layer 121b can be formed in the same process as the hole injection layer 121a.
- the hole transport layer 122b can be formed in the same process as the hole transport layer 122a.
- the electron transport layer 124b can be formed in the same process as the electron transport layer 124a.
- the electron injection layer 125b can be formed in the same process as the electron injection layer 125a.
- At least one of the hole injection layer 121b, the hole transport layer 122b, the electron transport layer 124b, and the electron injection layer 125b is between the first light emitting unit 140a and the second light emitting unit 140b in the insulating film 150. It may also be formed on the portion that is positioned (that is, the translucent portion 142). In this case, as shown in FIG. 5, at least one layer of the organic layer 120 b is connected to the organic layer 120 a through the insulating film 150.
- the light emitting layer 123b includes the same first host material as the light emitting layer 123a and a second guest material different from the light emitting layer 123a. By doing in this way, the luminescent color of the organic layer 120a and the luminescent color of the organic layer 120b can be varied only by changing the guest material.
- the second guest material is, for example, Ir (ppy) 3 .
- the thickness t a of the organic layer 120a is equal to or less than 105% to 95% or more the thickness t b of the organic layer 120b. Therefore, the thickness of the film between the first electrode 110a and the second electrode 130a of the first light emitting unit 140a is equal to the thickness of the film between the first electrode 110b and the second electrode 130b of the second light emitting unit 140b. It is 95% or more and 105% or less. In order to do this, these layers may be formed so that the thickness of the light emitting layer 123a is equal to the thickness of the light emitting layer 123b.
- the guest material included in the light emitting layer 123a of the first light emitting unit 140a is different from the guest material included in the light emitting layer 123b of the second light emitting unit 140b. For this reason, the light emission color of the 1st light emission part 140a differs from the light emission color of the 2nd light emission part 140b.
- the thickness t a of the organic layer 120a of the first light emitting portion 140a is equal to or less than 105% to 95% or more the thickness t b of the organic layer 120b of the second light-emitting portion 140b. For this reason, when the first light emitting unit 140a and the second light emitting unit 140b are not emitting light, the difference between the interference color generated in the first light emitting unit 140a and the interference color generated in the second light emitting unit 140b can be reduced.
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Selon la présente invention, une première partie électroluminescente (140a) et une seconde partie électroluminescente (140b) comprennent des couches organiques (120a, 120b) entre des électrodes, respectivement. L'épaisseur de film entre les électrodes de la première partie électroluminescente (140a) est d'au moins 95 % et pas plus de 105 % de l'épaisseur de film entre les électrodes de la seconde partie électroluminescente (140b). Additionnellement, la longueur d'onde de crête du spectre d'émission de la première partie électroluminescente (140a) diffère de la longueur d'onde de crête du spectre d'émission de la seconde partie électroluminescente (140b). Le nombre de couches entre les électrodes de la première partie électroluminescente (140a) est identique au nombre de couches entre les électrodes de la seconde partie électroluminescente (140b).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017060831 | 2017-03-27 | ||
JP2017-060831 | 2017-03-27 |
Publications (1)
Publication Number | Publication Date |
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WO2018179528A1 true WO2018179528A1 (fr) | 2018-10-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2017/036578 WO2018179528A1 (fr) | 2017-03-27 | 2017-10-10 | Dispositif électroluminescent |
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WO (1) | WO2018179528A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012053402A1 (fr) * | 2010-10-19 | 2012-04-26 | シャープ株式会社 | Dispositif de dépôt en phase vapeur, procédé de dépôt en phase vapeur et procédé pour produire un dispositif d'affichage électroluminescent organique |
WO2012099011A1 (fr) * | 2011-01-20 | 2012-07-26 | シャープ株式会社 | Substrat sur lequel une couche est formée, procédé de fabrication et dispositif d'affichage électroluminescent organique |
WO2012133458A1 (fr) * | 2011-03-31 | 2012-10-04 | シャープ株式会社 | Substrat d'affichage, dispositif d'affichage organique électroluminescent et procédé de fabrication de substrat d'affichage et de dispositif d'affichage organique électroluminescent |
US20160035802A1 (en) * | 2013-10-28 | 2016-02-04 | Boe Technology Group Co., Ltd. | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device |
-
2017
- 2017-10-10 WO PCT/JP2017/036578 patent/WO2018179528A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012053402A1 (fr) * | 2010-10-19 | 2012-04-26 | シャープ株式会社 | Dispositif de dépôt en phase vapeur, procédé de dépôt en phase vapeur et procédé pour produire un dispositif d'affichage électroluminescent organique |
WO2012099011A1 (fr) * | 2011-01-20 | 2012-07-26 | シャープ株式会社 | Substrat sur lequel une couche est formée, procédé de fabrication et dispositif d'affichage électroluminescent organique |
WO2012133458A1 (fr) * | 2011-03-31 | 2012-10-04 | シャープ株式会社 | Substrat d'affichage, dispositif d'affichage organique électroluminescent et procédé de fabrication de substrat d'affichage et de dispositif d'affichage organique électroluminescent |
US20160035802A1 (en) * | 2013-10-28 | 2016-02-04 | Boe Technology Group Co., Ltd. | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device |
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