WO2018128236A1 - Power supply device for plasma generation - Google Patents

Power supply device for plasma generation Download PDF

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Publication number
WO2018128236A1
WO2018128236A1 PCT/KR2017/007908 KR2017007908W WO2018128236A1 WO 2018128236 A1 WO2018128236 A1 WO 2018128236A1 KR 2017007908 W KR2017007908 W KR 2017007908W WO 2018128236 A1 WO2018128236 A1 WO 2018128236A1
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Prior art keywords
impedance
voltage
variable
high frequency
load
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PCT/KR2017/007908
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French (fr)
Korean (ko)
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박승진
권순구
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주식회사 메디플
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Publication of WO2018128236A1 publication Critical patent/WO2018128236A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop

Definitions

  • the present invention relates to a power supply for generating a plasma, and more particularly, a power supply for generating a plasma that can provide maximum transmission power by removing reflected power through automatic impedance matching even when a load size is changed. Relates to a device.
  • the plasma is generated by operating under atmospheric pressure rather than under low pressure that can be realized in a vacuum chamber, such as plasma used in semiconductor processes.
  • a plasma generating device that can be requested.
  • the related art is KR 10-1012345 B.
  • Korean Patent No. 10-1012345 a low power portable microwave plasma generator capable of generating plasma by operating under atmospheric pressure has been introduced.
  • This prior document discloses an apparatus for generating a plasma using resonant energy of microwaves provided by a coaxial cable. That is, the plasma generating apparatus disclosed in the above-mentioned prior document is configured to inject gas into the space between two conductors constituting the coaxial cable and to inject the injected gas into a plasma state by the resonance energy of microwaves provided to the conductors of the coaxial cable. .
  • a power supply device In order to supply energy-containing microwaves to such a conventional plasma generating device, a power supply device is required.
  • a plasma generation power supply generates and outputs a microwave having a predetermined power, and the output terminal to which the microwave is output is designed to output desired power based on 50 ⁇ .
  • the load connected to the output stage is frequently generated according to various environmental conditions.
  • the delivered power varies depending on the size of the load. The fluctuations can cause problems that do not provide the desired power.
  • an object of the present invention is to provide a power supply device for generating a plasma capable of providing maximum transmission power by removing reflected power through automatic impedance matching even when the size of the bottom is changed.
  • the present invention as a means for solving the above technical problem
  • a power supply apparatus for generating plasma for supplying a high frequency signal amplified to have energy for generating plasma comprising:
  • a frequency generator for generating a signal having a frequency of said high frequency signal
  • a power amplifier for amplifying the power of the signal generated by the frequency generator and providing it to the output terminal of the power supply device
  • a voltage / current sensor for detecting a voltage, a current of a high frequency signal output from the power amplifier, and a phase difference between the voltage and the current;
  • variable impedance element unit connected between the power amplifier and the output terminal and including a plurality of variable passive elements
  • An impedance regulator for deriving an impedance of a load connected to the output terminal based on the voltage, the current, and the phase difference detected by the voltage / current sensor, and adjusting an impedance of the variable passive element based on the impedance of the load;
  • It provides a power supply for generating a plasma comprising a.
  • the frequency generator may include a crystal oscillator for outputting an oscillation signal and a phase-locked loop (PLL) for changing the frequency of the oscillation signal to the frequency of the high frequency signal.
  • PLL phase-locked loop
  • the frequency generator may include a voltage controlled oscillator for output frequency is adjusted by a control voltage to output the frequency of the high frequency signal.
  • the voltage / current sensor may be implemented as a voltage-current probe.
  • the impedance regulator In one embodiment of the invention, the impedance regulator, the impedance regulator, and
  • the impedance of the load can be determined by the current value, ⁇ : phase difference detected by the voltage / current sensor.
  • the impedance regulator may adjust the impedance of the variable passive element such that the combined impedance of the impedance of the load and the impedance of the plurality of variable passive elements is a preset reference impedance.
  • variable impedance element unit may include a variable capacitor that can change the capacitance value or a variable inductor that can change the inductance value.
  • variable capacitor or the variable inductor may be connected in series or in parallel between the power amplifier and the output terminal.
  • the power supply device for generating plasma having the above-described problem solving means, even if the load impedance of the power supply does not maintain the reference impedance 50 according to the operating state or the surrounding environment of the plasma generating device. Accordingly, the impedance matching is performed to reduce the power loss by removing the reflected power and to secure the reliability of the operation of the plasma generator.
  • FIG. 1 is a diagram schematically illustrating a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied.
  • FIG. 2 is a block diagram illustrating a power supply device for generating plasma according to an embodiment of the present invention.
  • FIG. 3 is a diagram illustrating in more detail an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention.
  • FIG. 4 is a Smith chart illustrating a process of impedance matching according to an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention illustrated in FIG. 3.
  • FIG. 1 is a diagram schematically illustrating a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied.
  • a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied includes a power supply device 10 and a gas supplying gas, according to an embodiment of the present invention. It may be configured to include a resonator 30 for generating a plasma by discharging the gas supplied from the gas supply device 20 with the resonance energy of the high frequency signal supplied from the supply device 20 and the power supply device 10.
  • Prior art document 10-1012345 discloses a configuration of the resonator 30 in such a plasma generation system, and thus a detailed description of the resonator 30 will be omitted.
  • the power supply device 10 is provided to provide a high frequency signal of a predetermined power to the resonator 30 that generates plasma through discharge of gas, and has a predetermined high frequency having a predetermined constant power for stable plasma generation. It should be configured to provide a signal to the resonator 30.
  • the signal output terminal of the power supply device 10 is designed to output transmission power based on a predetermined impedance (for example, 50 ⁇ ) in advance, when the impedance of the output terminal is changed, the reflection is reflected and input back to the output terminal. As power is generated, it becomes impossible to provide a high frequency signal of sufficient power required by the resonator 30.
  • the electrical equivalent impedance is changed when the plasma itself generated in the resonator 30 directly touches the processing unit, or before and after ignition of the plasma in the resonator 30 There may be a case where the difference in the reflection characteristic is very severe, or the cable length between the power supply device 10 and the resonator 30 is changed.
  • the power supply device 10 should be configured to output the power required by the resonator 30 to the output terminal by suppressing the reflected power even when the load impedance is changed.
  • the power supply device for plasma generation to output the high frequency signal of the preset power (required in the resonator 30) by removing the reflected power is shown in FIG. Have the same configuration.
  • FIG. 2 is a block diagram illustrating a power supply device for plasma generation according to an embodiment of the present invention
  • FIG. 3 is an impedance regulator and a variable impedance of the power supply device for plasma generation according to an embodiment of the present invention. An example of the device is shown in more detail.
  • a power supply apparatus for generating plasma includes a frequency generator 11, a power amplifier 12, a voltage / current sensor 13, and an impedance. It may be configured to include a regulator 14 and the variable impedance element unit 15.
  • the frequency generator 11 is an element for generating and outputting a signal of a desired frequency.
  • the frequency of the signal generated in the frequency generator 11 can be set in various ways as needed, the signal of the millimeter wave band of approximately several hundred kHz to several GHz can be generated that can be applied to the system for low temperature plasma generation.
  • the frequency generator 11 may be applied to various frequency generators known in the art.
  • the frequency generator 11 includes a crystal oscillator having an oscillation circuit and outputting an oscillation signal for inputting a PLL, and a signal having a frequency required for a microwave plasma generation system by receiving a frequency signal generated by the oscillation circuit. It can be implemented as a phase-locked loop (PLL) that changes frequency.
  • the voltage controlled oscillator (VCO) may be implemented to adjust the frequency of the output signal according to the magnitude of the input control voltage.
  • the crystal oscillator and the PLL may be manufactured in the form of one chip, and the voltage controlled oscillator may also be manufactured in the form of one chip.
  • the power amplifier 12 receives a signal of a predetermined frequency generated by the frequency generator 11 and amplifies its power.
  • the power amplifier 12 may employ a variable gain power amplifier in which a separate control signal is input and the gain (amplification factor) can be adjusted according to the control signal.
  • the voltage / current sensor 13 detects the voltage, current and phase difference between the voltage and the current of the high frequency signal transmitted from the power amplifier 12 to the load side.
  • the voltage / current sensor 13 is a voltage-current probe (VI probe) which is a device capable of detecting the phase difference between voltage, current and voltage-current of a high frequency signal known in the art. Can be implemented.
  • VI probe voltage-current probe
  • the impedance regulator 14 calculates an impedance value of the load connected to the output of the power supply based on the voltage, current, and phase difference detected by the voltage / current sensor 13, and based on the calculated impedance value of the power
  • the impedance value of the variable impedance element unit 15 may be determined such that the impedance value viewed from the output terminal of the amplifier 12 toward the load side becomes a preset reference impedance value.
  • the variable impedance element unit 15 may include a plurality of passive elements whose impedance value may be appropriately changed.
  • the variable impedance element unit 15 is implemented by two variable capacitors connected in a series-parallel relationship, but the present invention is not limited thereto.
  • the variable impedance element unit 15 may include a variable capacitor whose capacitance can be changed and / or a variable inductor which can be changed in inductance.
  • passive elements included in the variable impedance element unit 15 may be connected in series or / and in parallel between the power amplifier 12 and the output terminal.
  • the frequency generator 11 outputs a high frequency signal of a predetermined frequency, and the high frequency signal output from the frequency generator 11 is input to the power amplifier 12 to amplify and output power with a predetermined gain.
  • the gain of power amplification in the power amplifier 12 may be set according to the resonance energy required by the resonator ('30' of FIG. 1) that receives the high frequency signal and generates plasma.
  • the power amplified high frequency signal output from the power amplifier 12 is provided to the load through an output stage.
  • the voltage / current sensor 13 receives the voltage, current and the frequency of the high frequency signal provided from the power amplifier 12 to the load.
  • the voltage-current phase difference is detected and provided to the impedance regulator 14.
  • the impedance regulator 14 first calculates the impedance of the current load by using the values of the voltage, current, and voltage-current phase difference of the high frequency signal provided from the power amplifier 12 to the load by the power amplifier 12. do.
  • Impedance calculation performed by the impedance regulator 14 may be performed through the following Equation 1.
  • Equation 1 Z L represents the impedance of the load, X represents the real part of the impedance of the load, Y represents the imaginary part of the impedance of the load, and V represents the voltage value of the high frequency signal detected by the voltage / current sensor 13. Is a current value of the high frequency signal detected by the voltage / current sensor 13, and ⁇ represents a phase difference between the voltage and the current of the high frequency signal.
  • the impedance regulator 14 determines impedance values of the variable passive elements provided in the variable impedance element unit 15 using the impedance of the load derived by Equation 1 above.
  • variable impedance element unit includes a first capacitor C1 connected in parallel between the power amplifier 12 and the output terminal and a second capacitor C2 connected in series between the power amplifier 12 and the output terminal.
  • first capacitor C1 connected in parallel between the power amplifier 12 and the output terminal
  • second capacitor C2 connected in series between the power amplifier 12 and the output terminal.
  • Reference numerals 'C1' and 'C2' may refer to capacitors included in the variable impedance element unit 15, and will be described as meaning capacitance of each capacitor.
  • the impedance regulator 14 determines the capacitance of each of the variable capacitors C1 and C2 such that the impedance viewed from the power amplifier 12 to the output terminal of the power supply becomes a predetermined reference impedance (for example, 50 ⁇ ). That is, the impedance regulator 14 may determine the capacitor
  • the impedances Zc1 and Zc2 of each capacitor may be determined as shown in Equation 2 below when the frequency of the high frequency signal is 'f'.
  • the combined impedance of the impedances of the two capacitors and the load is equal to that of the second capacitor C2 and the load impedance Z L connected in series with the first capacitor C1 in parallel, and the synthesized impedance is the reference impedance (50).
  • ⁇ should be determined as in Equation 3 below.
  • Equation 4 the capacitances of the variable capacitors C1 and C2 of the variable impedance element unit 15 may be determined. This process is shown in Equation 4 below.
  • Equation 4 Xc1 is '2 ⁇ * f * C1' and Xc2 is '2 ⁇ * f * C2'.
  • the power supply for generating a plasma the impedance value of the variable impedance element included in the variable impedance element unit 15, the voltage / current sensor 13 It can be expressed using X and Y determined by the voltage, current, and phase difference of the detected amplified high frequency signal. That is, the power supply apparatus for generating plasma according to the embodiment of the present invention measures the impedance value of the variable impedance element of the variable impedance element unit 15 by using the voltage, current, and phase difference of the amplified high frequency signal detected in real time. It can be calculated and applied immediately, minimizing the loss of power delivery by quickly performing impedance matching in response to varying load impedances.
  • FIG. 4 is a Smith chart illustrating a process of impedance matching according to an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention illustrated in FIG. 3.
  • the impedance regulator 14 determines the capacitance of the second capacitor C2 of the variable impedance element unit 15
  • the impedance viewed from the power amplifier 12 to the output terminal is shown in FIG. 4 at the load impedance (X + jY).
  • the arrow moves to the center point of the Smith chart to move to the desired reference impedance (50 ⁇ ).
  • the impedance regulator 14, the voltage / current sensor 13 derives the impedance of the load based on the detected value of the voltage, current and voltage-current phase difference of the amplified high frequency signal, and the load impedance and variable Impedance matching is performed by adjusting the impedance of the variable impedance element unit 15 so that the synthesized impedance of the impedance element becomes a desired reference impedance (50 ⁇ ).
  • the load impedance of the power supply apparatus does not maintain the reference impedance 50 depending on the operating state of the plasma generating apparatus or the surrounding environment. Even if changed, impedance matching may be performed accordingly to remove reflected power to reduce power loss and to ensure reliability in the operation of the plasma generator.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

Provided is a power supply device for plasma generation which supplies a high frequency signal amplified to have energy for plasma generation, the power supply device comprising: a frequency generator for generating a signal having a frequency of the high frequency signal; a power amplifier for amplifying power of the signal generated from the frequency generator, and providing same to an output terminal of the power supply device; a voltage/electric current sensor for detecting a voltage and an electric current of the high frequency signal outputted from the power amplifier, and a phase difference between the voltage and the electric current; a variable impedance element unit connected between the power amplifier and the output terminal and comprising a plurality of variable passive elements; and an impedance adjuster for deriving the impedance of a load connected the output terminal, on the basis of the voltage, electric current and phase difference detected by the voltage/electric current sensor, and adjusting the impedance of the variable passive elements on the basis of the impedance of the load.

Description

플라즈마 생성을 위한 전력 공급 장치Power supply for plasma generation
본 발명은 플라즈마 생성을 위한 전력 공급 장치에 관한 것으로, 더욱 상세하게는 부하의 크기가 변동되는 경우에도 자동 임피던스 매칭을 통해 반사 전력을 제거하여 최대 전송 전력을 제공할 수 있는 플라즈마 생성을 위한 전력 공급 장치에 관한 것이다.The present invention relates to a power supply for generating a plasma, and more particularly, a power supply for generating a plasma that can provide maximum transmission power by removing reflected power through automatic impedance matching even when a load size is changed. Relates to a device.
최근 플라즈마를 이용한 지혈 및 상처소독, 살균, 치아 미백, 암 치료 등 생의학 분야의 다양한 응용에 대한 관심이 증가하고 있다.Recently, interest in various applications in biomedical fields such as hemostasis and wound sterilization using plasma, sterilization, tooth whitening, and cancer treatment is increasing.
이와 같이 플라즈마를 다양한 생의학 분야에 응용하여 사용하기 위해서는, 반도체 공정 등에서 이용되는 플라즈마처럼 진공 챔버(Vacuum chamber)에서 구현될 수 있는 낮은 기압 조건(low pressure)에서 생성하기 보다는 대기압 하에서 동작하여 플라즈마를 생성할 수 있는 플라즈마 발생장치의 개발이 요청되었다.In order to use the plasma in various biomedical fields as described above, the plasma is generated by operating under atmospheric pressure rather than under low pressure that can be realized in a vacuum chamber, such as plasma used in semiconductor processes. The development of a plasma generating device that can be requested.
이에 관한 종래기술로는 KR 10-1012345 B 가 있다. The related art is KR 10-1012345 B.
한국등록특허 제10-1012345호에는 대기압 하에서 동작하여 플라즈마를 생성할 수 있는 저전력 휴대용 마이크로파 플라즈마 생성기가 소개된 바 있다. 상기 선행문헌에는 동축 케이블로 제공되는 마이크로파의 공진 에너지를 이용하여 플라즈마를 생성하기 위한 장치가 개시된다. 즉, 상기 선행문헌에 개시된 플라즈마 생성장치는 동축 케이블을 구성하는 두 도체 사이의 공간에 가스를 주입하고 주입된 가스가 동축 케이블의 도체들에 제공되는 마이크로파의 공진에너지에 의해 플라즈마 상태가 되도록 구성된다.In Korean Patent No. 10-1012345, a low power portable microwave plasma generator capable of generating plasma by operating under atmospheric pressure has been introduced. This prior document discloses an apparatus for generating a plasma using resonant energy of microwaves provided by a coaxial cable. That is, the plasma generating apparatus disclosed in the above-mentioned prior document is configured to inject gas into the space between two conductors constituting the coaxial cable and to inject the injected gas into a plasma state by the resonance energy of microwaves provided to the conductors of the coaxial cable. .
이와 같은 종래의 플라즈마 생성 장치로 에너지를 갖는 마이크로파를 공급하기 위해서는 전력 공급 장치가 요구된다. 통상, 플라즈마 생성용 전력 공급 장치는 소정 전력을 갖는 마이크로파를 생성하여 출력하는데, 마이크로파가 출력되는 출력단은 50 Ω을 기준으로 원하는 전력을 출력할 수 있도록 설계되고 있다.In order to supply energy-containing microwaves to such a conventional plasma generating device, a power supply device is required. In general, a plasma generation power supply generates and outputs a microwave having a predetermined power, and the output terminal to which the microwave is output is designed to output desired power based on 50 Ω.
그러나, 전력 공급 장치가 실제 적용되는 경우에는 다양한 환경 조건에 따라 그 출력단에 연결되는 부하가 50 이 아닌 경우가 빈번하게 발생하게 되며, 이 경우 전송 전력(delivered power)은 부하의 크기에 따라 다양하게 변동됨으로써 원하는 전력을 공급하지 못하게 되는 문제가 발생할 수 있다. However, when the power supply is actually applied, the load connected to the output stage is frequently generated according to various environmental conditions. In this case, the delivered power varies depending on the size of the load. The fluctuations can cause problems that do not provide the desired power.
상기의 배경기술로서 설명된 사항들은 본 발명의 배경에 대한 이해 증진을 위한 것일 뿐, 이 기술분야에서 통상의 지식을 가진 자에게 이미 알려진 종래기술에 해당함을 인정하는 것으로 받아들여져서는 안 될 것이다.The matters described as the background art are only for the purpose of improving the understanding of the background of the present invention, and should not be taken as acknowledging that they correspond to the related art already known to those skilled in the art.
이에 본 발명은, 하의 크기가 변동되는 경우에도 자동 임피던스 매칭을 통해 반사 전력을 제거하여 최대 전송 전력을 제공할 수 있는 플라즈마 생성을 위한 전력 공급 장치를 제공하는 것을 해결하고자 하는 기술적 과제로 한다.Accordingly, an object of the present invention is to provide a power supply device for generating a plasma capable of providing maximum transmission power by removing reflected power through automatic impedance matching even when the size of the bottom is changed.
상기 기술적 과제를 해결하기 위한 수단으로서 본 발명은,The present invention as a means for solving the above technical problem,
플라즈마를 생성하기 위한 에너지를 갖도록 증폭된 고주파 신호를 공급하는 플라즈마 생성을 위한 전력 공급 장치에 있어서,A power supply apparatus for generating plasma for supplying a high frequency signal amplified to have energy for generating plasma, the apparatus comprising:
상기 고주파 신호의 주파수를 갖는 신호를 생성하는 주파수 발생기;A frequency generator for generating a signal having a frequency of said high frequency signal;
상기 주파수 발생기에서 생성된 신호의 전력을 증폭하여 상기 전력 공급 장치의 출력단으로 제공하는 전력 증폭기;A power amplifier for amplifying the power of the signal generated by the frequency generator and providing it to the output terminal of the power supply device;
상기 전력 증폭기로에서 출력되는 고주파 신호의 전압, 전류 및 상기 전압과 전류 사이의 위상차를 검출하는 전압/전류 센서;A voltage / current sensor for detecting a voltage, a current of a high frequency signal output from the power amplifier, and a phase difference between the voltage and the current;
상기 전력 증폭기와 상기 출력단 사이에 연결되며, 복수의 가변 수동소자를 포함하는 가변 임피던스 소자부; 및A variable impedance element unit connected between the power amplifier and the output terminal and including a plurality of variable passive elements; And
상기 전압/전류 센서에서 검출된 상기 전압, 상기 전류 및 상기 위상차에 기반하여 상기 출력단에 연결된 부하의 임피던스를 도출하고, 상기 부하의 임피던스에 기반하여 상기 가변 수동소자의 임피던스를 조정하는 임피던스 조정기;An impedance regulator for deriving an impedance of a load connected to the output terminal based on the voltage, the current, and the phase difference detected by the voltage / current sensor, and adjusting an impedance of the variable passive element based on the impedance of the load;
를 포함하는 플라즈마 생성을 위한 전력 공급 장치를 제공한다.It provides a power supply for generating a plasma comprising a.
본 발명의 일 실시형태에서, 상기 주파수 발생기는, 발진신호를 출력하는 크리스탈 오실레이터 및 상기 발진 신호의 주파수를 상기 고주파 신호의 주파수로 변경하는 PLL(phase-locked loop)을 포함할 수 있다.In one embodiment of the present invention, the frequency generator may include a crystal oscillator for outputting an oscillation signal and a phase-locked loop (PLL) for changing the frequency of the oscillation signal to the frequency of the high frequency signal.
본 발명의 일 실시형태에서, 상기 주파수 발생기는, 제어 전압에 의해 출력 주파수가 조정되어 상기 고주파 신호의 주파수를 출력하는 전압제어발진기를 포함할 수 있다.In one embodiment of the present invention, the frequency generator may include a voltage controlled oscillator for output frequency is adjusted by a control voltage to output the frequency of the high frequency signal.
본 발명의 일 실시형태에서, 상기 전압/전류 센서는 전압-전류 프로브로 구현될 수 있다.In one embodiment of the invention, the voltage / current sensor may be implemented as a voltage-current probe.
본 발명의 일 실시형태에서, 상기 임피던스 조정기는,In one embodiment of the invention, the impedance regulator,
[식] [expression]
Figure PCTKR2017007908-appb-I000001
Figure PCTKR2017007908-appb-I000001
(X: 상기 부하의 임피던스의 실수부, Y: 상기 부하의 임피던스의 허수부, V는 상기 전압/전류 센서에서 검출된 고주파 신호의 전압값, I: 상기 전압/전류 센서에서 검출된 고주파 신호의 전류값, θ: 상기 전압/전류 센서에서 검출된 위상차)에 의해 상기 부하의 임피던스를 결정할 수 있다.(X: real part of the impedance of the load, Y: imaginary part of the impedance of the load, V is the voltage value of the high frequency signal detected by the voltage / current sensor, I: of the high frequency signal detected by the voltage / current sensor) The impedance of the load can be determined by the current value, θ: phase difference detected by the voltage / current sensor.
본 발명의 일 실시형태에서, 상기 임피던스 조정기는, 상기 부하의 임피던스와 상기 복수의 가변 수동소자의 임피던스의 합성 임피던스가 사전 설정된 기준 임피던스가 되도록 상기 가변 수동소자의 임피던스를 조정할 수 있다.In one embodiment of the present invention, the impedance regulator may adjust the impedance of the variable passive element such that the combined impedance of the impedance of the load and the impedance of the plurality of variable passive elements is a preset reference impedance.
본 발명의 일 실시형태에서, 상기 가변 임피던스 소자부는, 커패시턴스 값을 변경할 수 있는 가변 커패시터 또는 인덕턴스 값을 변경할 수 있는 가변 인덕터를 포함할 수 있다.In one embodiment of the present invention, the variable impedance element unit may include a variable capacitor that can change the capacitance value or a variable inductor that can change the inductance value.
본 발명의 일 실시형태에서, 상기 가변 커패시터 또는 상기 가변 인덕터는 상기 전력 증폭기와 상기 출력단 사이에 직렬 또는 병렬로 연결될 수 있다.In one embodiment of the present invention, the variable capacitor or the variable inductor may be connected in series or in parallel between the power amplifier and the output terminal.
상술한 바와 같은 과제 해결 수단을 갖는 플라즈마 생성을 위한 전력 공급 장치에 따르면, 플라즈마 생성 장치의 동작 상태 혹은 주변 환경에 따라 전력 공급 장치의 부하 임피던스가 기준 임피던스(50 )를 유지하지 못하고 변화되는 경우에도 그에 따라 임피던스 매칭을 수행함으로써 반사전력을 제거하여 전력 손실을 줄이고 플라즈마 생성기의 작동에 신뢰성을 확보할 수 있는 효과가 있다.According to the power supply device for generating plasma having the above-described problem solving means, even if the load impedance of the power supply does not maintain the reference impedance 50 according to the operating state or the surrounding environment of the plasma generating device. Accordingly, the impedance matching is performed to reduce the power loss by removing the reflected power and to secure the reliability of the operation of the plasma generator.
도 1은 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치가 적용되는 플라즈마 생성 시스템을 간략하게 도시한 도면이다. 1 is a diagram schematically illustrating a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied.
도 2는 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치를 도시한 블록 구성도이다.2 is a block diagram illustrating a power supply device for generating plasma according to an embodiment of the present invention.
도 3은 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치의 임피던스 조정기 및 가변 임피던스 소자의 일 예를 더욱 상세하게 도시한 도면이다.3 is a diagram illustrating in more detail an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention.
도 4는 도 3에 도시된 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치의 임피던스 조정기 및 가변 임피던스 소자의 일 예에 의한 임피던스 매칭의 과정을 설명하기 위한 스미스차트이다.FIG. 4 is a Smith chart illustrating a process of impedance matching according to an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention illustrated in FIG. 3.
이하에서는 첨부된 도면을 참조하여 본 발명의 다양한 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치에 대하여 살펴본다.Hereinafter, a power supply apparatus for generating plasma according to various embodiments of the present disclosure will be described with reference to the accompanying drawings.
도 1은 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치가 적용되는 플라즈마 생성 시스템을 간략하게 도시한 도면이다.1 is a diagram schematically illustrating a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied.
도 1을 참조하면, 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치가 적용되는 플라즈마 생성 시스템은, 본 발명의 일 실시형태에 따른 전력 공급 장치(10)와, 가스를 공급하는 가스 공급 장치(20) 및 전력 공급 장치(10)에서 공급되는 고주파 신호의 공진 에너지로 가스 공급 장치(20)에서 공급되는 가스를 방전 시켜 플라즈마를 생성하는 공진기(30)를 포함하여 구성될 수 있다.Referring to FIG. 1, a plasma generation system to which a power supply device for plasma generation according to an embodiment of the present invention is applied includes a power supply device 10 and a gas supplying gas, according to an embodiment of the present invention. It may be configured to include a resonator 30 for generating a plasma by discharging the gas supplied from the gas supply device 20 with the resonance energy of the high frequency signal supplied from the supply device 20 and the power supply device 10.
선행기술문헌인 한국등록특허 제10-1012345호에는 이러한 플라즈마 생성 시스템 중 공진기(30)의 구성이 상세하게 개시되는 바 공진기(30)에 대한 더 이상의 상세한 설명은 생략하기로 한다.Prior art document 10-1012345 discloses a configuration of the resonator 30 in such a plasma generation system, and thus a detailed description of the resonator 30 will be omitted.
이러한 플라즈마 생성 시스템에서, 전력 공급 장치(10)는 가스의 방전을 통해 플라즈마를 생성하는 공진기(30)로 소정 전력의 고주파 신호를 제공하기 위해 마련된 것으로 안정적인 플라즈마 생성을 위해 사전 설정된 일정한 전력을 갖는 고주파 신호를 공진기(30)로 제공하도록 구성되어야 한다. 하지만, 전력 공급 장치(10)의 신호 출력단은 사전에 일정 임피던스(예를 들어, 50 Ω)를 기준으로 전송 전력을 출력하도록 설계되므로, 출력단의 임피던스가 변경되는 경우 반사되어 출력단으로 다시 입력되는 반사 전력이 발생함에 따라 공진기(30)에서 요구되는 충분한 전력의 고주파 신호를 제공하는 것이 불가능 하게 된다. In such a plasma generation system, the power supply device 10 is provided to provide a high frequency signal of a predetermined power to the resonator 30 that generates plasma through discharge of gas, and has a predetermined high frequency having a predetermined constant power for stable plasma generation. It should be configured to provide a signal to the resonator 30. However, since the signal output terminal of the power supply device 10 is designed to output transmission power based on a predetermined impedance (for example, 50 Ω) in advance, when the impedance of the output terminal is changed, the reflection is reflected and input back to the output terminal. As power is generated, it becomes impossible to provide a high frequency signal of sufficient power required by the resonator 30.
예를 들어, 출력단의 임피던스가 변경되는 경우로는, 공진기(30)에서 생성되는 플라즈마 자체가 처리부에 직접 닿는 경우 전기적인 등가 임피던스가 변화되는 경우, 또는 공진기(30)에서 플라즈마의 점화 전과 후가 반사 특성의 차이가 매우 심한 경우, 또는 전력 공급 장치(10)와 공진기(30) 사이의 케이블 길이가 변경되는 경우 등이 있을 수 있다.For example, when the impedance of the output terminal is changed, the electrical equivalent impedance is changed when the plasma itself generated in the resonator 30 directly touches the processing unit, or before and after ignition of the plasma in the resonator 30 There may be a case where the difference in the reflection characteristic is very severe, or the cable length between the power supply device 10 and the resonator 30 is changed.
따라서, 전력 공급 장치(10)는 부하의 임피던스가 변경되는 경우에도 반사 전력을 억제함으로써 공진기(30)에서 요구되는 전력을 출력단으로 출력할 수 있도록 구성되어야 하는 것이다.Therefore, the power supply device 10 should be configured to output the power required by the resonator 30 to the output terminal by suppressing the reflected power even when the load impedance is changed.
이와 같이, 반사 전력을 제거하여 사전 설정된(공진기(30)에서 요구되는) 전력의 고주파 신호를 출력할 수 있도록 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치는 도 2에 도시된 것과 같은 구성을 갖는다.As such, the power supply device for plasma generation according to the embodiment of the present invention to output the high frequency signal of the preset power (required in the resonator 30) by removing the reflected power is shown in FIG. Have the same configuration.
도 2는 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치를 도시한 블록 구성도이고, 도 3은 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치의 임피던스 조정기 및 가변 임피던스 소자의 일 예를 더욱 상세하게 도시한 도면이다.FIG. 2 is a block diagram illustrating a power supply device for plasma generation according to an embodiment of the present invention, and FIG. 3 is an impedance regulator and a variable impedance of the power supply device for plasma generation according to an embodiment of the present invention. An example of the device is shown in more detail.
도 2 및 도 3을 참조하면, 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치는, 주파수 발생기(11)와, 전력 증폭기(12)와, 전압/전류 센서(13)와, 임피던스 조정기(14) 및 가변 임피던스 소자부(15)를 포함하여 구성될 수 있다.2 and 3, a power supply apparatus for generating plasma according to an embodiment of the present invention includes a frequency generator 11, a power amplifier 12, a voltage / current sensor 13, and an impedance. It may be configured to include a regulator 14 and the variable impedance element unit 15.
주파수 발생기(11)는 원하는 주파수의 신호를 생성하여 출력하는 요소이다. 주파수 발생기(11)에서 생성되는 신호의 주파수는 필요에 따라 다양하게 설정될 수 있는데, 저온 플라즈마 생성을 위한 시스템에 적용될 수 있는 대략 수백 kHz 내지 수 GHz의 밀리미터파 대역의 신호가 생성될 수 있다.The frequency generator 11 is an element for generating and outputting a signal of a desired frequency. The frequency of the signal generated in the frequency generator 11 can be set in various ways as needed, the signal of the millimeter wave band of approximately several hundred kHz to several GHz can be generated that can be applied to the system for low temperature plasma generation.
주파수 발생기(11)는 당 기술분야에 알려진 다양한 주파수 발생 장치가 적용될 수 있다. 예를 들어, 주파수 발생기(11)는 발진회로가 내장되어 PLL의 입력이 되는 발진신호를 출력하는 크리스탈 오실레이터와, 발진회로에서 생성된 주파수 신호를 입력 받아 마이크로파 플라즈마 발생 시스템에서 요구되는 주파수를 갖는 신호로 주파수 변경하는 PLL(phase-locked loop)로 구현될 수 있다. 다른 예로, 입력되는 제어 전압의 크기에 따라 출력 신호의 주파수를 조정하는 전압제어발진기(VCO: Voltage Controlled Oscillator)로 구현될 수 있다. The frequency generator 11 may be applied to various frequency generators known in the art. For example, the frequency generator 11 includes a crystal oscillator having an oscillation circuit and outputting an oscillation signal for inputting a PLL, and a signal having a frequency required for a microwave plasma generation system by receiving a frequency signal generated by the oscillation circuit. It can be implemented as a phase-locked loop (PLL) that changes frequency. As another example, the voltage controlled oscillator (VCO) may be implemented to adjust the frequency of the output signal according to the magnitude of the input control voltage.
여기서, 크리스탈 오실레이터와 PLL은 하나의 칩의 형태로 제작될 수 있으며 전압제어발진기 역시 하나의 칩 형태로 제작될 수 있다.Here, the crystal oscillator and the PLL may be manufactured in the form of one chip, and the voltage controlled oscillator may also be manufactured in the form of one chip.
전력 증폭기(12)는 주파수 발생기(11)에서 생성된 소정 주파수의 신호를 입력 받아 그 전력(power)를 증폭시키는 요소이다. The power amplifier 12 receives a signal of a predetermined frequency generated by the frequency generator 11 and amplifies its power.
본 발명의 여러 실시형태에서, 전력 증폭기(12)는 별도의 제어 신호를 입력 받고 제어 신호에 따라 이득(증폭율)이 조정될 수 있는 가변 이득 전력 증폭기가 채용될 수 있다. In various embodiments of the present invention, the power amplifier 12 may employ a variable gain power amplifier in which a separate control signal is input and the gain (amplification factor) can be adjusted according to the control signal.
전압/전류 센서(13)는 전력 증폭기(12)로부터 부하 측으로 전달되는 고주파 신호의 전압, 전류 및 전압과 전류 간의 위상차를 검출한다. 예를 들어, 전압/전류 센서(13)는 당 기술분야에 알려진 고주파 신호의 전압, 전류 및 전압-전류간 위상차를 검출할 수 있는 장비인 전압-전류 프로브(voltage-current probe: VI probe)로 구현될 수 있다.The voltage / current sensor 13 detects the voltage, current and phase difference between the voltage and the current of the high frequency signal transmitted from the power amplifier 12 to the load side. For example, the voltage / current sensor 13 is a voltage-current probe (VI probe) which is a device capable of detecting the phase difference between voltage, current and voltage-current of a high frequency signal known in the art. Can be implemented.
임피던스 조정기(14)는 전압/전류 센서(13)에서 검출된 전압, 전류 및 위상차를 기반으로 전력 공급 장치의 출력단에 연결되는 부하의 임피던스 값을 연산하고, 연산된 부하의 임피던스 값에 기반하여 전력 증폭기(12)의 출력단에서 부하측으로 바라본 임피던스 값이 사전 설정된 기준 임피던스 값이 될 수 있도록 가변 임피던스 소자부(15)의 임피던스 값을 결정할 수 있다.The impedance regulator 14 calculates an impedance value of the load connected to the output of the power supply based on the voltage, current, and phase difference detected by the voltage / current sensor 13, and based on the calculated impedance value of the power The impedance value of the variable impedance element unit 15 may be determined such that the impedance value viewed from the output terminal of the amplifier 12 toward the load side becomes a preset reference impedance value.
가변 임피던스 소자부(15)은 임피던스 값이 적절하게 변경될 수 있는 복수의 수동 소자들을 포함할 수 있다. 도 3에 도시된 예는 직병렬 관계로 연결된 두 개의 가변 커패시터로 가변 임피던스 소자부(15)를 구현한 것이나, 본 발명은 이에 한정되지 않는다. 예를 들어, 가변 임피던스 소자부(15)는 커패시턴스가 변경될 수 있는 가변 커패시터 및/또는 인덕턴스가 변경될 수 있는 가변 인덕터를 포함할 수 있다. 또한, 가변 임피던스 소자부(15)에 포함되는 수동 소자들은 전력 증폭기(12)와 출력단 사이에 직렬 또는/및 병렬로 연결될 수 있다. The variable impedance element unit 15 may include a plurality of passive elements whose impedance value may be appropriately changed. In the example shown in FIG. 3, the variable impedance element unit 15 is implemented by two variable capacitors connected in a series-parallel relationship, but the present invention is not limited thereto. For example, the variable impedance element unit 15 may include a variable capacitor whose capacitance can be changed and / or a variable inductor which can be changed in inductance. In addition, passive elements included in the variable impedance element unit 15 may be connected in series or / and in parallel between the power amplifier 12 and the output terminal.
이상과 같은 구성을 갖는 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치의 작용 및 효과에 대해 설명한다.The operation and effects of the power supply device for plasma generation according to the embodiment of the present invention having the above configuration will be described.
주파수 발생기(11)에서 소정 주파수의 고주파 신호를 출력하고, 주파수 발생기(11)에서 출력된 고주파 신호는 전력 증폭기(12)로 입력되어 사전 설정된 이득으로 전력이 증폭되어 출력된다. 전력 증폭기(12)에서 이루어지는 전력 증폭의 이득은 고주파 신호를 입력 받아 플라즈마를 생성하는 공진기(도 1의 '30')에서 요구하는 공진 에너지에 따라 설정될 수 있다.The frequency generator 11 outputs a high frequency signal of a predetermined frequency, and the high frequency signal output from the frequency generator 11 is input to the power amplifier 12 to amplify and output power with a predetermined gain. The gain of power amplification in the power amplifier 12 may be set according to the resonance energy required by the resonator ('30' of FIG. 1) that receives the high frequency signal and generates plasma.
전력 증폭기(12)에서 출력되는 전력 증폭된 고주파 신호는 출력단을 통해 부하로 제공되는데, 이 과정에서 전압/전류 센서(13)는 전력 증폭기(12)에서 부하로 제공되는 고주파 신호의 전압, 전류 및 전압-전류 위상차를 검출하여 임피던스 조정기(14)로 제공한다.The power amplified high frequency signal output from the power amplifier 12 is provided to the load through an output stage. In this process, the voltage / current sensor 13 receives the voltage, current and the frequency of the high frequency signal provided from the power amplifier 12 to the load. The voltage-current phase difference is detected and provided to the impedance regulator 14.
임피던스 조정기(14)는 먼저, 전압/전류 센서(13)는 전력 증폭기(12)에서 부하로 제공되는 고주파 신호의 전압, 전류 및 전압-전류 위상차를 검출한 값을 이용하여 현재 부하의 임피던스를 연산한다.The impedance regulator 14 first calculates the impedance of the current load by using the values of the voltage, current, and voltage-current phase difference of the high frequency signal provided from the power amplifier 12 to the load by the power amplifier 12. do.
임피던스 조정기(14)에 의해 이루어지는 임피던스 연산은 다음의 식 1을 통해 이루어질 수 있다.Impedance calculation performed by the impedance regulator 14 may be performed through the following Equation 1.
[식 1][Equation 1]
Figure PCTKR2017007908-appb-I000002
Figure PCTKR2017007908-appb-I000002
상기 식 1에서 ZL은 부하의 임피던스를 나타내며, X는 부하의 임피던스의 실수부를 나타내고, Y는 부하의 임피던스의 허수부를 나타내며, V는 전압/전류 센서(13)에서 검출된 고주파 신호의 전압값, I는 전압/전류 센서(13)에서 검출된 고주파 신호의 전류값, θ는 고주파 신호의 전압과 전류 사이의 위상차를 나타낸다.In Equation 1, Z L represents the impedance of the load, X represents the real part of the impedance of the load, Y represents the imaginary part of the impedance of the load, and V represents the voltage value of the high frequency signal detected by the voltage / current sensor 13. Is a current value of the high frequency signal detected by the voltage / current sensor 13, and θ represents a phase difference between the voltage and the current of the high frequency signal.
임피던스 조정기(14)는 상기 식 1에 의해 도출된 부하의 임피던스를 이용하여 가변 임피던스 소자부(15)에 마련된 가변 수동 소자들의 임피던스 값을 결정한다.The impedance regulator 14 determines impedance values of the variable passive elements provided in the variable impedance element unit 15 using the impedance of the load derived by Equation 1 above.
도 3에 도시된 것과 같이, 전력 증폭기(12)와 출력단 사이에 병렬로 연결된 제1 커패시터(C1)와 전력 증폭기(12)와 출력단 사이에 직렬로 연결된 제2 커패시터(C2)로 가변 임피던스 소자부(15)가 구현된 경우를 예로 설명하면 다음과 같다. 여기서, 참조부호 'C1', 'C2'는 가변 임피던스 소자부(15)에 포함된 커패시터를 의미하기도 하며, 각 커패시터의 커패시턴스를 의미하는 것으로 설명될 것이다.As shown in FIG. 3, the variable impedance element unit includes a first capacitor C1 connected in parallel between the power amplifier 12 and the output terminal and a second capacitor C2 connected in series between the power amplifier 12 and the output terminal. An example of implementing (15) is as follows. Here, reference numerals 'C1' and 'C2' may refer to capacitors included in the variable impedance element unit 15, and will be described as meaning capacitance of each capacitor.
임피던스 조정기(14)는 전력 증폭기(12)에서 전력 공급 장치의 출력단으로 바라본 임피던스가 사전 설정된 기준 임피던스(예를 들어, 50 Ω)이 되도록 각각의 가변 커패시터(C1, C2)의 커패시턴스를 결정한다. 즉, 임피던스 조정기(14)는, 가변 임피던스 소자부(15)에 의한 임피던스와 부하의 임피던스(X + jY)의 합성 임피던스가 기준 임피던스가 되도록 가변 커패시터의 커패시터를 결정하면 된다.The impedance regulator 14 determines the capacitance of each of the variable capacitors C1 and C2 such that the impedance viewed from the power amplifier 12 to the output terminal of the power supply becomes a predetermined reference impedance (for example, 50 Ω). That is, the impedance regulator 14 may determine the capacitor | capacitor of a variable capacitor so that the combined impedance of the impedance by the variable impedance element part 15 and the impedance (X + jY) of a load may become a reference impedance.
각각의 커패시터의 임피던스(Zc1, Zc2)는 고주파 신호의 주파수가 'f'라고 할 때 다음의 식 2와 같이 결정될 수 있다. The impedances Zc1 and Zc2 of each capacitor may be determined as shown in Equation 2 below when the frequency of the high frequency signal is 'f'.
[식 2][Equation 2]
Zc1 = 1 / (j * 2π * f * C1)Zc1 = 1 / (j * 2π * f * C1)
Zc2 = 1 / (j * 2π * f * C2)Zc2 = 1 / (j * 2π * f * C2)
또한, 두 커패시터와 부하의 임피던스의 합성 임피던스는 제1 커패시터(C1)과 상호 직렬 연결된 제2 커패시터(C2) 및 부하 임피던스(ZL)가 병렬로 연결된 것과 같으며, 합성 임피던스가 기준 임피던스(50 Ω)가 되도록 다음의 식 3과 같이 결정되어야 한다.In addition, the combined impedance of the impedances of the two capacitors and the load is equal to that of the second capacitor C2 and the load impedance Z L connected in series with the first capacitor C1 in parallel, and the synthesized impedance is the reference impedance (50). Ω) should be determined as in Equation 3 below.
[식 3][Equation 3]
Figure PCTKR2017007908-appb-I000003
Figure PCTKR2017007908-appb-I000003
식 3에 식 1과 식 2를 대입하고, C1과 C2에 대해 정리하면 가변 임피던스 소자부(15)의 가변 커패시터(C1, C2)의 커패시턴스가 결정될 수 있다. 이 과정은 다음의 식 4와 같다.By substituting Equation 1 and Equation 2 into Equation 3 and arranging for C1 and C2, the capacitances of the variable capacitors C1 and C2 of the variable impedance element unit 15 may be determined. This process is shown in Equation 4 below.
[식 4][Equation 4]
Figure PCTKR2017007908-appb-I000004
Figure PCTKR2017007908-appb-I000004
Figure PCTKR2017007908-appb-I000005
Figure PCTKR2017007908-appb-I000005
Figure PCTKR2017007908-appb-I000006
Figure PCTKR2017007908-appb-I000006
Figure PCTKR2017007908-appb-I000007
Figure PCTKR2017007908-appb-I000007
Figure PCTKR2017007908-appb-I000008
Figure PCTKR2017007908-appb-I000008
Figure PCTKR2017007908-appb-I000009
Figure PCTKR2017007908-appb-I000009
Figure PCTKR2017007908-appb-I000010
Figure PCTKR2017007908-appb-I000010
Figure PCTKR2017007908-appb-I000011
Figure PCTKR2017007908-appb-I000011
식 4에서, Xc1은 '2π * f * C1'이며, Xc2는 '2π * f * C2'이다.In Equation 4, Xc1 is '2π * f * C1' and Xc2 is '2π * f * C2'.
상기 식 4에 나타난 것과 같이, 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치는 가변 임피던스 소자부(15)에 포함된 가변 임피던스 소자의 임피던스 값을, 전압/전류 센서(13)에서 검출된 증폭된 고주파 신호의 전압, 전류 및 위상차로 결정되는 X와 Y를 이용하여 표현할 수 있다. 즉, 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치는 실시간으로 검출되는 증폭된 고주파 신호의 전압, 전류 및 위상차를 이용하여 가변 임피던스 소자부(15)의 가변 임피던스 소자의 임피던스 값을 즉각 연산하여 적용할 수 있으므로 가변하는 부하의 임피던스에 대응하여 신속하게 임피던스 매칭을 수행함으로써 전력 전달의 손실을 최소화할 수 있게 된다.As shown in Equation 4, the power supply for generating a plasma according to an embodiment of the present invention, the impedance value of the variable impedance element included in the variable impedance element unit 15, the voltage / current sensor 13 It can be expressed using X and Y determined by the voltage, current, and phase difference of the detected amplified high frequency signal. That is, the power supply apparatus for generating plasma according to the embodiment of the present invention measures the impedance value of the variable impedance element of the variable impedance element unit 15 by using the voltage, current, and phase difference of the amplified high frequency signal detected in real time. It can be calculated and applied immediately, minimizing the loss of power delivery by quickly performing impedance matching in response to varying load impedances.
도 4는 도 3에 도시된 본 발명의 일 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치의 임피던스 조정기 및 가변 임피던스 소자의 일 예에 의한 임피던스 매칭의 과정을 설명하기 위한 스미스차트이다. FIG. 4 is a Smith chart illustrating a process of impedance matching according to an example of an impedance regulator and a variable impedance element of a power supply device for generating plasma according to an embodiment of the present invention illustrated in FIG. 3.
임퍼던스 조정기(14)가, 가변 임피던스 소자부(15)의 제2 커패시터(C2)의 커패시턴스를 결정함에 따라 전력 증폭기(12)에서 출력단으로 바라본 임피던스는 부하 임피던스(X + jY)에서 도 4에서 'C2'로 표시된 화살표를 따라 이동하게 되고, 가변 임피던스 소자부(15)의 제1 커패시터(C1)의 커패시턴스를 결정함에 따라 전력 증폭기(12)에서 출력단으로 바라본 임피던스는 다시 도 4에서 'C1'로 표시된 화살표를 따라 이동하게 되어 스미스차트의 중심점으로 이동하게 되어 원하는 기준 임피던스(50 Ω)가 될 수 있다.As the impedance regulator 14 determines the capacitance of the second capacitor C2 of the variable impedance element unit 15, the impedance viewed from the power amplifier 12 to the output terminal is shown in FIG. 4 at the load impedance (X + jY). The impedance seen from the power amplifier 12 to the output terminal as the capacitor moves along the arrow denoted by 'C2' and determines the capacitance of the first capacitor C1 of the variable impedance element unit 15 again becomes 'C1' in FIG. 4. The arrow moves to the center point of the Smith chart to move to the desired reference impedance (50 Ω).
이와 같이, 임피던스 조정기(14)는, 증폭된 고주파 신호의 전압, 전류 및 전압-전류 위상차를 검출한 값에 기반하여 전압/전류 센서(13)가 부하의 임피던스를 도출하고, 부하의 임피던스와 가변 임피던스 소자의 합성 임피던스를 원하는 기준 임피던스(50 Ω)가 되도록 가변 임피던스 소자부(15)의 임피던스를 조정함으로써 임피던스 매칭을 수행하게 된다.In this way, the impedance regulator 14, the voltage / current sensor 13 derives the impedance of the load based on the detected value of the voltage, current and voltage-current phase difference of the amplified high frequency signal, and the load impedance and variable Impedance matching is performed by adjusting the impedance of the variable impedance element unit 15 so that the synthesized impedance of the impedance element becomes a desired reference impedance (50 Ω).
이상에서 설명한 바와 같이, 본 발명의 여러 실시형태에 따른 플라즈마 생성을 위한 전력 공급 장치는, 플라즈마 생성 장치의 동작 상태 혹은 주변 환경에 따라 전력 공급 장치의 부하 임피던스가 기준 임피던스(50 )를 유지하지 못하고 변화되는 경우에도 그에 따라 임피던스 매칭을 수행함으로써 반사전력을 제거하여 전력 손실을 줄이고 플라즈마 생성기의 작동에 신뢰성을 확보할 수 있다.As described above, in the power supply apparatus for generating plasma according to various embodiments of the present disclosure, the load impedance of the power supply apparatus does not maintain the reference impedance 50 depending on the operating state of the plasma generating apparatus or the surrounding environment. Even if changed, impedance matching may be performed accordingly to remove reflected power to reduce power loss and to ensure reliability in the operation of the plasma generator.
본 발명은 특정한 실시형태에 관련하여 도시하고 설명하였지만, 이하의 특허청구범위에 의해 제공되는 본 발명의 기술적 사상을 벗어나지 않는 한도 내에서, 본 발명이 다양하게 개량 및 변화될 수 있다는 것은 당 업계에서 통상의 지식을 가진 자에게 있어서 자명할 것이다.While the invention has been shown and described in connection with specific embodiments, it is within the skill of the art that various changes and modifications can be made therein without departing from the spirit of the invention provided by the following claims. It will be self-evident for those of ordinary knowledge.
[부호의 설명][Description of the code]
11: 주파수 발생기 12: 전력 증폭기11: frequency generator 12: power amplifier
13: 전압/전류 센서 14: 임피던스 조정기13: voltage / current sensor 14: impedance regulator
15: 가변 임피던스 소자부15: variable impedance element

Claims (8)

  1. 플라즈마를 생성하기 위한 에너지를 갖도록 증폭된 고주파 신호를 공급하는 플라즈마 생성을 위한 전력 공급 장치에 있어서,A power supply apparatus for generating plasma for supplying a high frequency signal amplified to have energy for generating plasma, the apparatus comprising:
    상기 고주파 신호의 주파수를 갖는 신호를 생성하는 주파수 발생기;A frequency generator for generating a signal having a frequency of said high frequency signal;
    상기 주파수 발생기에서 생성된 신호의 전력을 증폭하여 상기 전력 공급 장치의 출력단으로 제공하는 전력 증폭기;A power amplifier for amplifying the power of the signal generated by the frequency generator and providing it to the output terminal of the power supply device;
    상기 전력 증폭기로에서 출력되는 고주파 신호의 전압, 전류 및 상기 전압과 전류 사이의 위상차를 검출하는 전압/전류 센서;A voltage / current sensor for detecting a voltage, a current of a high frequency signal output from the power amplifier, and a phase difference between the voltage and the current;
    상기 전력 증폭기와 상기 출력단 사이에 연결되며, 복수의 가변 수동소자를 포함하는 가변 임피던스 소자부; 및A variable impedance element unit connected between the power amplifier and the output terminal and including a plurality of variable passive elements; And
    상기 전압/전류 센서에서 검출된 상기 전압, 상기 전류 및 상기 위상차에 기반하여 상기 출력단에 연결된 부하의 임피던스를 도출하고, 상기 부하의 임피던스에 기반하여 상기 가변 수동소자의 임피던스를 조정하는 임피던스 조정기;An impedance regulator for deriving an impedance of a load connected to the output terminal based on the voltage, the current, and the phase difference detected by the voltage / current sensor, and adjusting an impedance of the variable passive element based on the impedance of the load;
    를 포함하는 플라즈마 생성을 위한 전력 공급 장치.Power supply for plasma generation comprising a.
  2. 청구항 1에 있어서,The method according to claim 1,
    상기 주파수 발생기는, 발진신호를 출력하는 크리스탈 오실레이터 및 상기 발진 신호의 주파수를 상기 고주파 신호의 주파수로 변경하는 PLL(phase-locked loop)을 포함하는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.The frequency generator includes a crystal oscillator for outputting an oscillation signal and a phase-locked loop (PLL) for changing the frequency of the oscillation signal to the frequency of the high frequency signal.
  3. 청구항 1에 있어서, The method according to claim 1,
    상기 주파수 발생기는, 제어 전압에 의해 출력 주파수가 조정되어 상기 고주파 신호의 주파수를 출력하는 전압제어발진기를 포함하는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.The frequency generator includes a voltage controlled oscillator for output frequency is adjusted by a control voltage to output the frequency of the high frequency signal.
  4. 청구항 1에 있어서,The method according to claim 1,
    상기 전압/전류 센서는 전압-전류 프로브인 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.And said voltage / current sensor is a voltage-current probe.
  5. 청구항 1에 있어서,The method according to claim 1,
    상기 임피던스 조정기는,The impedance regulator,
    [식] [expression]
    Figure PCTKR2017007908-appb-I000012
    Figure PCTKR2017007908-appb-I000012
    (X: 상기 부하의 임피던스의 실수부, Y: 상기 부하의 임피던스의 허수부, V는 상기 전압/전류 센서에서 검출된 고주파 신호의 전압값, I: 상기 전압/전류 센서에서 검출된 고주파 신호의 전류값, θ: 상기 전압/전류 센서에서 검출된 위상차)에 의해 상기 부하의 임피던스를 결정하는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치. (X: real part of the impedance of the load, Y: imaginary part of the impedance of the load, V is the voltage value of the high frequency signal detected by the voltage / current sensor, I: of the high frequency signal detected by the voltage / current sensor) Current value (theta): the impedance of the load is determined by the phase difference detected by the voltage / current sensor).
  6. 청구항 1 또는 청구항 5에 있어서,The method according to claim 1 or 5,
    상기 임피던스 조정기는, 상기 부하의 임피던스와 상기 복수의 가변 수동소자의 임피던스의 합성 임피던스가 사전 설정된 기준 임피던스가 되도록 상기 가변 수동소자의 임피던스를 조정하는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.The impedance regulator adjusts the impedance of the variable passive element so that the combined impedance of the impedance of the load and the impedance of the plurality of variable passive elements is a predetermined reference impedance.
  7. 청구항 5에 있어서,The method according to claim 5,
    상기 가변 임피던스 소자부는, 커패시턴스 값을 변경할 수 있는 가변 커패시터 또는 인덕턴스 값을 변경할 수 있는 가변 인덕터를 포함하는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.The variable impedance device unit may include a variable capacitor capable of changing a capacitance value or a variable inductor capable of changing an inductance value.
  8. 청구항 7에 있어서,The method according to claim 7,
    상기 가변 커패시터 또는 상기 가변 인덕터는 상기 전력 증폭기와 상기 출력단 사이에 직렬 또는 병렬로 연결되는 것을 특징으로 하는 플라즈마 생성을 위한 전력 공급 장치.The variable capacitor or the variable inductor is connected between the power amplifier and the output terminal in series or in parallel.
PCT/KR2017/007908 2017-01-04 2017-07-21 Power supply device for plasma generation WO2018128236A1 (en)

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