WO2018119600A1 - 磁控溅射阴极系统 - Google Patents

磁控溅射阴极系统 Download PDF

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Publication number
WO2018119600A1
WO2018119600A1 PCT/CN2016/112183 CN2016112183W WO2018119600A1 WO 2018119600 A1 WO2018119600 A1 WO 2018119600A1 CN 2016112183 W CN2016112183 W CN 2016112183W WO 2018119600 A1 WO2018119600 A1 WO 2018119600A1
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WIPO (PCT)
Prior art keywords
magnetic
magnetron sputtering
sputtering cathode
cathode system
annular target
Prior art date
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Ceased
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PCT/CN2016/112183
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English (en)
French (fr)
Inventor
王三军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to PCT/CN2016/112183 priority Critical patent/WO2018119600A1/zh
Priority to CN201680042990.2A priority patent/CN107995932B/zh
Publication of WO2018119600A1 publication Critical patent/WO2018119600A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour

Definitions

  • the invention relates to the field of sputter coating, in particular to a magnetron sputtering cathode system.
  • the target material has a boundary effect under a fixed magnetic field, and the loss is uneven, which affects the coating quality.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the present invention proposes a magnetron sputtering cathode system.
  • a magnetic assembly disposed within the annular target is rotated, the magnetic field lines of the magnetic assembly passing through the annular target.
  • the magnetic component moves relative to the target, and the magnetic field line formed on the surface of the magnetic component changes, thereby avoiding the boundary effect of the target under the action of the fixed magnetic field, reducing the local loss of the target, and improving The quality of the coating.
  • the annular target is annular, square or triangular.
  • the magnetic component includes a magnetic component that includes a plurality of E-shaped magnetic elements or U-shaped magnet elements stacked along an axial direction of the annular target.
  • the magnetic element comprises a permanent magnet element and/or an electromagnetic element.
  • the magnetic element comprises a plurality of electromagnetic elements that operate independently.
  • the magnetic component includes a magnetic component including a plurality of magnetic elements and a telescopic component stacked along an axial direction of the annular target, the telescopic component being fixed at one end The other end is connected to the magnetic element.
  • the telescoping member comprises a push rod or cylinder.
  • the magnetic assembly includes a rotating shaft and a magnetic member that is coupled to the spindle bearing.
  • the magnetic assembly further includes a telescoping member that connects the shaft and the magnetic member.
  • the magnetron sputtering cathode system further comprises:
  • An annular target back tube disposed within the annular target, the magnetic assembly being disposed within the annular target back tube.
  • the material of the annular target back tube comprises oxygen free copper, metallic molybdenum, stainless steel or ceramic.
  • FIG. 1 is a top plan view of a magnetron sputtering cathode system in accordance with an embodiment of the present invention.
  • FIG. 2 is a side view of a magnetic component in accordance with an embodiment of the present invention.
  • Ring target 10 annular target back tube 12;
  • the magnetic component 20, the magnetic member 22, the magnetic element 222, the telescopic member 24, and the rotating shaft 26 The magnetic component 20, the magnetic member 22, the magnetic element 222, the telescopic member 24, and the rotating shaft 26.
  • a magnetron sputtering cathode system 100 includes an annular target 10 and a magnetic component 20 rotatably disposed in the annular target 10.
  • the magnetic field lines of the magnetic component 20 pass through the annular target. Material 10.
  • the magnetic component 20 moves relative to the annular target 10, and the magnetic field line formed by the magnetic component 20 on the surface of the annular target 10 changes, thereby avoiding the etching target of the annular target 10 under the action of a fixed magnetic field, reducing the ring shape.
  • the local loss of the target 10 improves the quality of the coating.
  • the magnetron sputtering cathode system 100 is a physical vapor deposition technique used in a sputtering coating process to prepare various materials such as metals, semiconductors, and insulators.
  • the apparatus of the magnetron sputtering cathode system 100 is simple and easy to control, and the magnetron sputtering cathode system 100 has the advantages of large coating area and strong adhesion.
  • the working principle of the magnetron sputtering cathode system 100 is: placing the magnetron sputtering cathode system 100 under an argon atmosphere, applying a sufficient voltage between the magnetron sputtering cathode system 100 and the anode substrate to form an electric field of a certain intensity.
  • the electrons fly toward the substrate under the action of the electric field and collide with the argon atoms of the argon gas to ionize the argon atoms to generate argon ions and new electrons.
  • the new electrons fly to the substrate, and the argon ions carry high energy under the electric field.
  • the surface of the annular target 10 is bombarded to cause sputtering on the surface of the annular target 10.
  • Neutral target atoms or molecules in the sputtered particles are deposited on the substrate to complete the coating of the substrate.
  • argon can also be replaced by other low pressure inert gases.
  • the reaction environment of the magnetron sputtering cathode system 100 is easily satisfied, and the processing cost of the magnetron sputtering coating is reduced.
  • Magnetron sputtering has a higher deposition rate, high equipment movement, and lower pressure required for magnetron sputtering, saving energy, so magnetron sputtering is more widely used.
  • the sputter coating method mainly includes three-stage sputtering, two-radio-frequency sputtering, and reactive sputtering.
  • the annular target 10 is annular, square or triangular.
  • the annular target 10 used in the embodiment of the present invention not only occupies less space, but also makes the structure of the magnetron sputtering cathode system 100 more compact, and realizes the integration of the magnetron sputtering cathode system 100.
  • the etch pit is formed on the local surface of the annular target 10 by the magnetic field, the utilization of the annular target 10 is improved, and the production cost of the sputter coating is reduced.
  • the annular target 10 adopts an annular shape, a square ring shape or a triangular ring shape, and has a simple shape and is convenient for processing.
  • the annular target 10 also enables target atoms that are sputtered outward from the surface of the annular target 10 to be directed toward the substrate from different directions.
  • the annular target 10 can also adopt a special shape such as an S shape or a taper according to different sputter coating requirements.
  • the magnetic assembly 20 includes a magnetic component 22 that includes a plurality of E-shaped magnetic elements 222 or U-shaped magnet elements 222 stacked along the axial direction of the annular target 10.
  • the magnetron sputtering cathode system 100 since the magnetron sputtering cathode system 100 performs high-speed sputtering under low pressure, it is necessary to effectively improve the ionization rate of argon gas or other low-pressure inert gas to ensure the quality of the sputter coating, and multiple axial stacking.
  • the E-type magnetic element 222 or the U-shaped magnet element 222 increases the magnetic field strength of the magnetic component 20, and the charged particles are restrained by the magnetic field, so that the argon ions can carry enough energy when impacting the annular target 10 to cause the surface of the annular target 10 to occur.
  • Sputtering avoids a decrease in the radius of the electron spiral when the magnetic field strength is small, thereby correspondingly reducing the probability of collision with the argon atoms, resulting in a decrease in the sputter deposition rate.
  • the magnetic element adopts a common E-type magnetic element 222 or U-shaped element 222, and the magnetic field formed by the single magnetic element 222 can control the flight path of the argon ion, thereby avoiding the necessity of using two or more magnets when using the strip magnet.
  • the magnetic element 222 portion of the system 100 makes the entire magnetron sputtering cathode system 100 more compact, while the E-type magnetic element 222 or the U-shaped magnetic element 222 is low in cost and easy to manufacture, which facilitates production.
  • the shape of the magnetic field should be as smooth as possible, and the magnetic field of the track should be uniformly amplified as much as possible, especially in the curved part, a wider magnetic field should be designed.
  • the magnetic element 222 includes a permanent magnet element and/or an electromagnetic element.
  • the magnetic element 222 can adopt a permanent magnet element.
  • the magnetron sputtering cathode system 100 has a simple structure and does not need to supply the magnetic element 222, which saves energy and reduces production cost.
  • the permanent magnet elements in the magnetron sputtering cathode system 100 may be made of ferrite and neodymium iron boron alloy.
  • Ferrite is sintered from iron oxide and other ingredients. It is more commonly used.
  • the magnetic field strength of the permanent ferrite after magnetization is high, and the residual magnetic field can be maintained for a long time.
  • the magnetic component 222 does not need to be replaced frequently, which brings processing. Convenience.
  • the magnetic element 222 can also adopt an electromagnetic element.
  • the magnitude of the magnetic field strength in the magnetron sputtering cathode system 100 can be controlled by the magnitude of the current applied to the electromagnetic element, and the operation is simple and the control is convenient.
  • the iron core in the electromagnetic element is made of soft iron, such as a ferrosilicon alloy and a soft ferrite. It should be noted that the iron core in the electromagnet is made of steel, which causes the electromagnetic circuit to remain magnetic after the current loop in the electromagnetic element is disconnected, and the magnetron sputtering cathode system 100 cannot be changed by changing the current of the electromagnetic component. The size of the medium magnetic field.
  • the magnetic element 222 can also adopt a combination of a permanent magnet element and an electromagnetic element, so that the energy saving effect can be achieved, and the magnetic field strength in the magnetron sputtering cathode system 100 can be adjusted by controlling the electromagnetic element. the size of.
  • the magnetic element 222 includes a plurality of electromagnetic elements that operate independently.
  • each electromagnetic component can be connected to a controller, and the corresponding controller can independently control the working or non-operation of the corresponding electromagnetic component, thereby controlling the magnetic field strength of the magnetron sputtering cathode system 100. It is simple and convenient, and it is necessary to stop the replacement of the magnet when the permanent magnet is used to change the magnetic field strength, which saves time for the processing and improves the equipment.
  • each controller and corresponding electromagnetic component constitute a series circuit.
  • the controller may include buttons, switches, and knives, so that the cost is low, the structure is simple, and the installation is convenient;
  • the controller may include electronic components such as contactors or relays to automatically control the electromagnetic components to work or not.
  • the controller can also include an optoelectronic remote control or an infrared remote control, etc., so that more sensitive control of the electromagnetic component can be achieved.
  • the magnetic assembly 20 includes a magnetic member 22 and a plurality of magnetic members 22 that are stacked along the axial direction of the annular target 10, the telescopic member 24 being fixedly disposed at one end and magnetically Element 222 is connected.
  • the telescopic member 24 drives the magnetic member 222 to be close to or away from the annular target 10. Accordingly, the strength and angle of the magnetic field lines formed on the surface of the annular target 10 by the magnetic member 222 are changed, thereby avoiding the magnetic member 222 being In the case where the magnetic field formed on the surface of the annular target 10 remains unchanged, an etch pit is generated on the surface of the annular target 10, the utilization of the annular target 10 is improved, and the service life of the annular target 10 is prolonged.
  • the telescoping member 24 includes a push rod or cylinder.
  • the push rod has an overload protection capability and does not cause damage to the motor and the mechanical parts.
  • the push rod includes a hydraulic type.
  • Hydraulic pushers are easy to standardize, serialize and generalize, making it easy to achieve professional mass production, which helps to improve the productivity of the putter, product quality and reduce the production cost of the putter.
  • the oil in the hydraulic push rod lubricates the hydraulic push rod, which can reduce the friction of the push rod and other components. Wipe, extend the life of the putter and reduce the maintenance and maintenance of the equipment.
  • the cylinder telescoping member 24 is generally comprised of components such as a cylinder, an end cap, a piston, a piston rod, and a seal.
  • the cylinder telescopic member 24 is simple and compact in structure, small in size, light in weight, and has good sealing performance of the cylinder telescopic member 24, and is not easily leaked.
  • the cylinder telescopic component 24 has less wear during operation and has a long service life, which reduces maintenance and replacement of the equipment and reduces production costs.
  • the magnetic assembly 20 includes a shaft 26 and a magnetic member 22 that is coupled to the shaft 26 for bearing.
  • the bearing connection structure is simple, easy to install, and the manufacturing of the connecting bearing is relatively simple, which greatly reduces the cost of the device.
  • the magnetic member 22 is rotatable to change the strength and angle of the magnetic field formed by the magnetic member 22 on the surface of the annular target 10, thereby preventing the fixed magnetic field on the surface of the annular target 10 from causing severe local loss to the target, and improving the ring shape.
  • bearing connections are connected by an interference fit.
  • the magnetic member 22 and the rotating shaft 26 achieve low friction rotation, the friction loss of the rotating shaft 26 and the magnetic member 22 is further reduced, and the service life of the rotating shaft 26 is prolonged.
  • the magnetic assembly 20 further includes a telescoping member 24 that connects the shaft 26 and the magnetic member 22.
  • the magnetic assembly 20 is more integrated, and the structure of the magnetron sputtering cathode system 100 is more compact and smaller, and is easier to handle.
  • the magnetron sputtering cathode system 100 further includes:
  • An annular target backing tube 12 is disposed within the annular target 10 and the magnetic assembly 20 is disposed within the annular target backing tube 12.
  • the magnetic component 20 is located in a sealed environment inside the annular target back tube 12, and impurities are prevented from entering the magnetron sputtering cathode system 100, which affects the magnetic field generated by the magnetic component 20 or the trajectory of the argon atoms. This affects the quality of the sputter coating.
  • the annular target 10 and the annular target back tube 12 are installed in the following manner: a groove of a corresponding size is machined on the surface of the annular target 10 and the annular target back tube 12, and the annular target is 10 and the annular target back tube 12 is formed with a grooved side stacked together, and the groove is filled with a lower hardness material to avoid damage to the annular target 10 and the annular target back tube 12 under vacuum conditions.
  • the annular target 10 is hermetically welded to the annular target back tube 12, and pressure is applied to the annular target 10 and the annular target back tube 12 so that the filling material in the groove is fitted to the annular target 10 and the annular target back.
  • the annular target 10 and the annular target back tube 12 are further fixedly connected, and finally the annular target 10 and the annular target back tube 12 are subjected to heat treatment and finished processing to realize the annular target 10 and the annular target back tube 12 Fixed connection.
  • the shape of the annular target back tube 12 can correspond to the shape of the annular target 10, and can be arranged in an annular shape, a square ring shape or a triangular ring shape.
  • the annular target back tube 12 may be disposed in a cylindrical shape coaxial with the cylindrical annular target 10.
  • annular target back tube 12 is easier to manufacture and the production cost is greatly reduced.
  • the material of the annular target backing tube 12 includes oxygen free copper, metallic molybdenum, stainless steel, or ceramic.
  • the oxygen-free copper since the oxygen-free copper has good electrical conductivity and thermal conductivity and is easy to be mechanically processed, it is a commonly used material for the annular target back tube 12.
  • the annular target back tube 12 made of oxygen-free copper can be reused 10 times or more under the condition of proper maintenance, which greatly saves cost.
  • the annular target back tube 12 requires high temperature bonding, and the annular target back tube 12 is fabricated using metallic molybdenum.
  • the annular target back tube 12 is made of stainless steel.
  • the stainless steel has good strength and thermal conductivity. As the annular target back tube 12, it can provide good support and protection for the magnetic component 20 disposed in the annular target back tube 12, and can timely work the magnetic assembly 20 during operation. The generated heat is dissipated to avoid the excessive temperature of the magnetic component 20 affecting the magnetic field, thereby controlling the product quality of the magnetron sputtering cathode system 100. At the same time, stainless steel is inexpensive and can significantly reduce the production cost of sputter coating.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality” is two or more unless specifically and specifically defined.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical connection, or can be electrical connection; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements.
  • installation can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact.
  • the first feature "above”, “above” and “above” the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

提供了一种磁控溅射阴极系统，包括环形靶材和转动设置在环形靶材内的磁性组件，所述磁性组件的磁场线穿过所述环形靶材。磁性组件相对于所述靶材运动，磁性组件在靶材表面形成的磁场线变化，避免了靶材在固定磁场作用下产生边界效应，减少了靶材的局部损耗，提高了镀膜质量。

Description

磁控溅射阴极系统 技术领域
本发明涉及溅射镀膜领域，具体涉及一种磁控溅射阴极系统。
背景技术
目前的磁控溅射阴极系统中，靶材在固定磁场作用下产生边界效应，损耗不均，影响镀膜质量。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本发明提出一种磁控溅射阴极系统。
本发明实施方式的磁控溅射阴极系统，包括：
环形靶材；和
转动设置在所述环形靶材内的磁性组件，所述磁性组件的磁场线穿过所述环形靶材。
本发明实施方式中，磁性组件相对于所述靶材运动，磁性组件在靶材表面形成的磁场线变化，避免了靶材在固定磁场作用下产生边界效应，减少了靶材的局部损耗，提高了镀膜质量。
在某些实施方式中，所述环形靶材呈圆环状、方形环状或三角环状。
在某些实施方式中，所述磁性组件包括磁性部件，所述磁性部件包括沿所述环形靶材的轴向堆叠的多个E型磁性元件或U型磁铁元件。
在某些实施方式中，所述磁性元件包括永磁元件和/或电磁元件。
在某些实施方式中，所述磁性元件包括多个电磁元件，所述电磁元件独立工作。
在某些实施方式中，所述磁性组件包括磁性部件，所述磁性部件包括沿所述环形靶材的轴向堆叠的多个磁性元件和伸缩部件，所述伸缩部件一端固定设 置，另一端与所述磁性元件连接。
在某些实施方式中，所述伸缩部件包括推杆或气缸。
在某些实施方式中，所述磁性组件包括转轴和磁性部件，所述磁性部件与所述转轴轴承连接。
在某些实施方式中，所述磁性组件还包括连接所述转轴和所述磁性部件的伸缩部件。
在某些实施方式中，所述磁控溅射阴极系统还包括：
设置在所述环形靶材内的环形靶材背管，所述磁性组件设置在所述环形靶材背管内。
在某些实施方式中，所述环形靶材背管的材料包括无氧铜、金属钼、不锈钢或陶瓷。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本发明实施方式的磁控溅射阴极系统的俯视图。
图2是本发明实施方式的磁性组件的侧视图。
主要元件符号说明：
磁控溅射阴极系统100；
环形靶材10、环形靶材背管12；
磁性组件20、磁性部件22、磁性元件222、伸缩部件24、转轴26。
具体实施方式
以下结合附图对本发明的实施方式作进一步说明。附图中相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。
另外，下面结合附图描述的本发明的实施方式是示例性的，仅用于解释本发明的实施方式，而不能理解为对本发明的限制。
请参阅图1和图2，本发明实施方式的磁控溅射阴极系统100，包括环形靶材10和转动设置在环形靶材10内的磁性组件20，磁性组件20的磁场线穿过环形靶材10。
本发明实施方式中，磁性组件20相对于环形靶材10运动，磁性组件20在环形靶材10表面形成的磁场线变化，避免了环形靶材10在固定磁场作用下产生蚀刻坑，减少了环形靶材10的局部损耗，提高了镀膜质量。
具体地，磁控溅射阴极系统100是一种物理气相沉积技术，用于溅射镀膜工艺，能制备金属、半导体、绝缘体等多种材料。磁控溅射阴极系统100的设备简单、易于控制，且磁控溅射阴极系统100具有镀膜面积大和附着力强的优点。磁控溅射阴极系统100的工作原理是：将磁控溅射阴极系统100置于氩气环境下，在磁控溅射阴极系统100和阳极基板之间施加足够的电压，形成一定强度的电场，电子在电场的作用下飞向基板，并与氩气的氩原子发生碰撞，使氩原子电离产生出氩离子和新的电子，新电子飞向基板，而氩离子在电场作用下携带高能量轰击环形靶材10表面，使环形靶材10表面发生溅射。溅射粒子中的中性靶原子或分子沉积在基板上完成对基板的镀膜。
当然，氩气还能用其他低压惰性气体代替。
如此，磁控溅射阴极系统100的反应环境易于满足，降低了磁控溅射镀膜的加工成本。
磁控溅射沉积速度较高，设备的稼动高，且磁控溅射工作所需气压较低，节省了能源，所以磁控溅射应用更广泛。
除了磁控溅射，溅射镀膜方法主要还包括三级溅射、二射频溅射和反应溅射。
相比较磁控溅射而言，三级溅射较难获得大面积的且分布均匀的膜体，且提高薄膜沉积速率的能力有限；二射频溅射存在较为严重的接地问题；反 应溅射中随着活性气体压力的增加，靶材表面可能形成一层相应的化合物，导致溅射和薄膜沉积速率的降低。
在某些实施方式中，环形靶材10呈圆环状、方形环状或三角环状。
相对于现有技术中采用的平面靶，本发明实施方式采用的环形靶材10不但占用空间更少，使磁控溅射阴极系统100的结构更加紧凑，实现磁控溅射阴极系统100的一体化，而且避免了磁场在环形靶材10上的局部表面形成蚀刻坑的情况，提高了环形靶材10的利用率，降低了溅射镀膜的生产成本。同时，环形靶材10采用圆环状、方形环状或三角环状，造型较为简单，方便加工。
环形靶材10还能使环形靶材10表面向外溅射的靶材原子从不同方向射向基板。
如此，减少了膜的疏孔，使得基板镀膜致密，提高了溅射镀膜的质量。
进一步地，环形靶材10还能根据不同的溅射镀膜需求采用特殊形状，比如S形或锥形。
如此能保证溅射镀膜的质量。
在某些实施方式中，磁性组件20包括磁性部件22，磁性部件22包括沿环形靶材10的轴向堆叠的多个E型磁性元件222或U型磁铁元件222。
本发明实施方式中，由于磁控溅射阴极系统100在低气压下进行高速溅射，必须有效提高氩气或其他低压惰性气体的离化率才能保证溅射镀膜的质量，多个轴向堆叠的E型磁性元件222或U型磁铁元件222增加了磁性组件20的磁场强度，利用磁场对带电粒子进行约束，使氩离子冲击环形靶材10时能携带足够能量，使环形靶材10表面发生溅射，避免了磁场强度较小时电子螺旋运行半径减小，从而相应减小和氩原子碰撞几率，导致溅射沉积速率降低的情况。
同时，磁性元件采用常见的E型磁性元件222或U型元件222，单个磁性元件222形成的磁场即能控制氩离子的飞行轨迹，避免了使用条形磁铁时必须用两个以上的磁铁配合才能完成磁控溅射的操作，精简了磁控溅射阴极 系统100中的磁性元件222部分，使整个磁控溅射阴极系统100变得更加紧凑，同时E型磁性元件222或U型磁性元件222成本低且方便制造，给生产带来了方便。
进一步地，磁场的磁道形状要尽量圆滑，磁道的磁场要尽量均匀放大，尤其是弯曲部分应该设计更宽的磁场。
如此，可以提高溅射镀膜的效率。
在某些实施方式中，磁性元件222包括永磁元件和/或电磁元件。
本发明实施方式中，磁性元件222可以采用永磁元件，如此，磁控溅射阴极系统100结构简单，且无需给磁性元件222供能，节约了能量，降低了生产成本。
具体地，磁控溅射阴极系统100中的永磁元件可以采用铁氧体和铷铁硼合金作为材料。
铁氧体由铁的氧化物和其他配料烧结而成，较为常用，永磁铁氧体充磁后磁场强度较高，且能长时间保持残留磁场，磁性元件222无需经常更换，给加工带来了方便。
本发明实施方式中，磁性元件222也可以采用电磁元件，如此，磁控溅射阴极系统100中磁场强度的大小可以通过施加在电磁元件上的电流的大小控制，操作简单，控制方便。
具体地，电磁元件中的铁芯采用软铁制作，比如铁硅合金和软磁铁氧体。需要注意的是，电磁铁中的铁芯用钢制作会导致电磁元件中的电流回路断开后电磁元件仍然残留磁性，也就无法通过改变电磁元件的电流来改变及时磁控溅射阴极系统100中磁场的大小。
本发明实施方式中，磁性元件222还可以采用永磁元件和电磁元件的组合，如此，既能达到节能的目的，又能通过对电磁元件的控制来调节磁控溅射阴极系统100中磁场强度的大小。
在某些实施方式中，磁性元件222包括多个电磁元件，所述电磁元件独立工作。
本发明实施方式中，每个电磁元件可对应连接一个控制器，通过对应的控制器，可以独立控制对应电磁元件工作或不工作，也就控制了磁控溅射阴极系统100的磁场强度，操作简单、方便，避免了使用永磁体时需改变磁场强度就必须停机更换磁体的情况，为加工节省了时间，也提高了设备稼动。
具体地，每个控制器和对应电磁元件构成串联电路。
如此，电路简单，易于控制。
进一步地，在电磁元件数目较少的情况下，控制器可以包括按钮、开关和闸刀，如此，成本较低，结构简单，安装方便；
电磁元件数目较多、手动控制较复杂时，控制器可以包括接触器或继电器等电子元件，来自动控制电磁元件工作或不工作。
当然，在某些实施方式中，控制器还能包括光电遥控或红外遥控等，如此，能实现对电磁元件更灵敏的控制。
在某些实施方式中，磁性组件20包括磁性部件22和伸缩部件24，磁性部件22包括沿环形靶材10的轴向堆叠的多个磁性元件222，伸缩部件24一端固定设置，另一端与磁性元件222连接。
本发明实施方式中，伸缩部件24带动磁性元件222靠近或远离环形靶材10，相应地，磁性元件222在环形靶材10表面形成的磁场线的强度和角度发生改变，避免了磁性元件222在环形靶材10表面形成的磁场保持不变的情况下环形靶材10表面产生蚀刻坑的情况，提高了环形靶材10的利用率，延长了环形靶材10的使用寿命。
在某些实施方式中，伸缩部件24包括推杆或气缸。
本发明实施方式中，推杆具有超负荷保护能力，不会对电机和机件造成损坏。
具体地，推杆包括液压式。
液压式推杆易于实现标准化、序列化和泛化，易于实现专业的大规模生产，有利于提高推杆的生产率、产品质量并降低推杆的生产成本。同时，液压式推杆中的机油对液压式推杆起润滑作用，能减少推杆和其他元件的摩 擦，延长推杆的使用寿命，减少设备的维修和维护。
气缸伸缩部件24一般由缸筒、端盖、活塞、活塞杆和密封件等元件组成。
气缸伸缩部件24结构简单紧凑，体积小，重量轻，且气缸伸缩部件24的密封性好，不易漏气。气缸伸缩部件24工作过程中磨损也较小，使用寿命长，减少了设备的维修、更换，降低了生产成本。
在某些实施方式中，磁性组件20包括转轴26和磁性部件22，磁性部件22与转轴26轴承连接。
本发明实施方式中，轴承连接结构简单，易于安装，且连接轴承的制造较为简单，大大降低了设备的成本。此外，磁性部件22可旋转，使磁性部件22在环形靶材10表面形成的磁场的强度和角度发生变化，避免了环形靶材10表面的固定磁场对靶材造成严重的局部损耗，提高了环形靶材10的利用率。
具体地，轴承连接通过过盈配合连接。
如此，磁性部件22和转轴26实现低摩擦转动，转轴26和磁性部件22的摩擦损耗进一步减少，转轴26的使用寿命得到延长。
在某些实施方式中，磁性组件20还包括连接转轴26和磁性部件22的伸缩部件24。
如此，磁性组件20更加一体化，磁控溅射阴极系统100的结构更加紧凑，也更小型化，便于搬运。
在某些实施方式中，磁控溅射阴极系统100还包括：
设置在环形靶材10内的环形靶材背管12，磁性组件20设置在环形靶材背管12内。
本发明实施方式中，磁性组件20位于环形靶材背管12内的密封环境中，避免了杂质进入磁控溅射阴极系统100，对磁性组件20产生的磁场或者氩原子的运行轨迹产生影响，从而影响溅射镀膜的质量的情况。
具体地，本发明实施方式中环形靶材10和环形靶材背管12的安装方式如下：在环形靶材10与环形靶材背管12的表面加工出对应尺寸的凹槽，将环形靶材10和环形靶材背管12形成有凹槽的一面叠放在一起，在凹槽中填充硬度较低的材料以避免环形靶材10和环形靶材背管12收到损伤，在真空条件下将环形靶材10与环形靶材背管12封焊成一体，向环形靶材10和环形靶材背管12施加压力使凹槽中的填充材料嵌合在环形靶材10和环形靶材背管12中，进一步固定连接环形靶材10和环形靶材背管12，最后将环形靶材10和环形靶材背管12进行热处理和成品加工，实现环形靶材10与环形靶材背管12的固定连接。
相应地，环形靶材背管12的形状可对应环形靶材10的形状，可设置成圆环状、方形环状或三角环状，比如环形靶材10为圆柱形时，环形靶材背管12可设置为与圆柱形环形靶材10同轴的圆柱形。
如此，环形靶材背管12更便于制造，生产成本大大降低。
在某些实施方式中，环形靶材背管12的材料包括无氧铜、金属钼、不锈钢或陶瓷。
本发明实施方式中，由于无氧铜具有良好的导电性和导热性，且容易进行机械加工，是常用的环形靶材背管12材料。在保养适当的情况下，无氧铜制作的环形靶材背管12能重复使用10次甚至更多，大大节省了成本。
具体地，在某些实施方式中，环形靶材背管12需要进行高温帖合，则采用金属钼制作环形靶材背管12。
如此，可避免环形靶材背管12表面被氧化或者发生翘曲；
在某些实施方式中，环形靶材背管12由不锈钢制成。
不锈钢具有良好的强度和导热性，作为环形靶材背管12既能为设置在环形靶材背管12中的磁性组件20提供良好的支撑和保护作用，又能及时将磁性组件20工作过程中产生的热量散发出去，避免了磁性组件20温度过高影响磁场，从而磁控溅射阴极系统100的产品质量。同时，不锈钢价格低廉，能大幅降低溅射镀膜的生产成本。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示 例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (11)

  1. 一种磁控溅射阴极系统，其特征在于包括：
    环形靶材；和
    转动设置在所述环形靶材内的磁性组件，所述磁性组件的磁场线穿过所述环形靶材。
  2. 如权利要求1所述的磁控溅射阴极系统，其特征在于，所述环形靶材呈圆环状、方形环状或三角环状。
  3. 如权利要求1所述的磁控溅射阴极系统，其特征在于，所述磁性组件包括磁性部件，所述磁性部件包括沿所述环形靶材的轴向堆叠的多个E型磁性元件或U型磁铁元件。
  4. 如权利要求3所述的磁控溅射阴极系统，其特征在于，所述磁性元件包括永磁元件和/或电磁元件。
  5. 如权利要求4所述的磁控溅射阴极系统，其特征在于，所述磁性元件包括多个电磁元件，所述电磁元件独立工作。
  6. 如权利要求1所述的磁控溅射阴极系统，其特征在于，所述磁性组件包括磁性部件和伸缩部件，所述磁性部件包括沿所述环形靶材的轴向堆叠的多个磁性元件，所述伸缩部件一端固定设置，另一端与所述磁性元件连接。
  7. 如权利要求6所述的磁控溅射阴极系统，其特征在于，所述伸缩部件包括推杆或气缸。
  8. 如权利要求1所述的磁控溅射阴极系统，其特征在于，所述磁性组件包括转轴和磁性部件，所述磁性部件与所述转轴轴承连接。
  9. 如权利要求8所述的磁控溅射阴极系统，其特征在于，所述磁性组件还包括连接所述转轴和所述磁性部件的伸缩部件。
  10. 如权利要求1所述的磁控溅射阴极系统，其特征在于，所述磁控溅射阴极系统还包括：
    设置在所述环形靶材内的环形靶材背管，所述磁性组件设置在所述环形 靶材背管内。
  11. 如权利要求10所述的磁控溅射阴极系统，其特征在于，所述环形靶材背管的材料包括无氧铜、金属钼、不锈钢或陶瓷。
PCT/CN2016/112183 2016-12-26 2016-12-26 磁控溅射阴极系统 Ceased WO2018119600A1 (zh)

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