WO2018118315A1 - Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology - Google Patents
Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology Download PDFInfo
- Publication number
- WO2018118315A1 WO2018118315A1 PCT/US2017/062621 US2017062621W WO2018118315A1 WO 2018118315 A1 WO2018118315 A1 WO 2018118315A1 US 2017062621 W US2017062621 W US 2017062621W WO 2018118315 A1 WO2018118315 A1 WO 2018118315A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor die
- interposer
- major surface
- semiconductor
- pillar
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/4068—Heatconductors between device and heatsink, e.g. compliant heat-spreaders, heat-conducting bands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0652—Bump or bump-like direct electrical connections from substrate to substrate
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06548—Conductive via connections through the substrate, container, or encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06589—Thermal management, e.g. cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020197019913A KR102342690B1 (en) | 2016-12-21 | 2017-11-20 | Semiconductor die assembly and related art having a heat spreader extending through an underlying interposer |
CN201780072758.8A CN109983572B (en) | 2016-12-21 | 2017-11-20 | Semiconductor die assemblies having heat spreaders extending through an underlying interposer and related techniques |
JP2019531054A JP6770648B2 (en) | 2016-12-21 | 2017-11-20 | Semiconductor die assembly and related technologies with a heat spreader that extends through the interposer below |
EP17884980.8A EP3559987A4 (en) | 2016-12-21 | 2017-11-20 | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/386,343 US10062634B2 (en) | 2016-12-21 | 2016-12-21 | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
US15/386,343 | 2016-12-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018118315A1 true WO2018118315A1 (en) | 2018-06-28 |
Family
ID=62556984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2017/062621 WO2018118315A1 (en) | 2016-12-21 | 2017-11-20 | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
Country Status (7)
Country | Link |
---|---|
US (3) | US10062634B2 (en) |
EP (1) | EP3559987A4 (en) |
JP (1) | JP6770648B2 (en) |
KR (1) | KR102342690B1 (en) |
CN (1) | CN109983572B (en) |
TW (1) | TWI683404B (en) |
WO (1) | WO2018118315A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10062634B2 (en) * | 2016-12-21 | 2018-08-28 | Micron Technology, Inc. | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
KR102451167B1 (en) * | 2018-01-23 | 2022-10-06 | 삼성전자주식회사 | Semiconductor package |
KR20200083697A (en) | 2018-12-28 | 2020-07-09 | 삼성전자주식회사 | ADHESIVE FILM, SEMICONDUCTOR DEVICE USING THE SAME, and SEMICONDUCTOR PACKAGE INCLUDING THE SAME |
US11372043B2 (en) * | 2019-08-21 | 2022-06-28 | Micron Technology, Inc. | Heat spreaders for use in semiconductor device testing, such as burn-in testing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130093074A1 (en) * | 2011-10-13 | 2013-04-18 | Xilinx, Inc. | Multi-die integrated circuit structure with heat sink |
EP2631943A2 (en) * | 2012-02-24 | 2013-08-28 | Broadcom Corporation | System-in-package with integrated protection socket |
KR20150049164A (en) * | 2013-10-29 | 2015-05-08 | 삼성전자주식회사 | Semiconductor Package Device |
US20150236002A1 (en) * | 2011-04-22 | 2015-08-20 | Tessera, Inc. | Multi-chip module with stacked face-down connected dies |
US20160254249A1 (en) * | 2010-02-26 | 2016-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D Semiconductor Package Interposer with Die Cavity |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2293487B (en) * | 1994-09-21 | 1998-08-12 | Hewlett Packard Co | Method and apparatus for attaching a heat sink and a fan to an intergrated circuit package |
JP3196762B2 (en) * | 1999-04-20 | 2001-08-06 | 日本電気株式会社 | Semiconductor chip cooling structure |
JP2000349178A (en) * | 1999-06-08 | 2000-12-15 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
JP2001352018A (en) * | 2000-06-07 | 2001-12-21 | Tomohiro Kitayama | Heat transfer member for semiconductor device and cooling structure thereof |
JP2002033411A (en) * | 2000-07-13 | 2002-01-31 | Nec Corp | Semiconductor device with heat spreader and its manufacturing method |
JP2007505478A (en) * | 2003-08-29 | 2007-03-08 | サーマルワークス,インコーポレイティド | Expansion-constrained die stack |
TWI239603B (en) * | 2003-09-12 | 2005-09-11 | Advanced Semiconductor Eng | Cavity down type semiconductor package |
TWI256707B (en) * | 2004-10-21 | 2006-06-11 | Advanced Semiconductor Eng | Cavity-down multiple chip package |
JP4986435B2 (en) * | 2005-10-12 | 2012-07-25 | 株式会社ソニー・コンピュータエンタテインメント | Semiconductor device and method for producing semiconductor device |
KR100700936B1 (en) * | 2006-01-25 | 2007-03-28 | 삼성전자주식회사 | Cooling apparatus and memory module having the same |
JP5211457B2 (en) * | 2006-09-19 | 2013-06-12 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
JP4870584B2 (en) * | 2007-01-19 | 2012-02-08 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP2008218669A (en) * | 2007-03-02 | 2008-09-18 | Nec Electronics Corp | Semiconductor device |
JP2009129960A (en) * | 2007-11-20 | 2009-06-11 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
US20090213541A1 (en) * | 2008-02-27 | 2009-08-27 | Matthew Allen Butterbaugh | Cooling Plate Assembly with Fixed and Articulated Interfaces, and Method for Producing Same |
US8273603B2 (en) * | 2008-04-04 | 2012-09-25 | The Charles Stark Draper Laboratory, Inc. | Interposers, electronic modules, and methods for forming the same |
US7928562B2 (en) * | 2008-07-22 | 2011-04-19 | International Business Machines Corporation | Segmentation of a die stack for 3D packaging thermal management |
KR20120019091A (en) * | 2010-08-25 | 2012-03-06 | 삼성전자주식회사 | Multi-chip package and method of manufacturing the same |
US8472190B2 (en) * | 2010-09-24 | 2013-06-25 | Ati Technologies Ulc | Stacked semiconductor chip device with thermal management |
US9147085B2 (en) * | 2010-09-24 | 2015-09-29 | Blackberry Limited | Method for establishing a plurality of modes of operation on a mobile device |
CN103380496A (en) * | 2010-10-06 | 2013-10-30 | 查尔斯.斯塔克.德雷珀实验室公司 | Interposers, electronic modules, and methods for forming the same |
JP2012114334A (en) * | 2010-11-26 | 2012-06-14 | Nec Casio Mobile Communications Ltd | Semiconductor module having cavity substrate, failure analysis method for the same, and method of manufacturing the semiconductor module |
JP2012129335A (en) * | 2010-12-15 | 2012-07-05 | Renesas Electronics Corp | Semiconductor device and method of manufacturing semiconductor device |
US8674519B2 (en) * | 2010-12-17 | 2014-03-18 | Intel Corporation | Microelectronic package and method of manufacturing same |
TWI475651B (en) * | 2011-08-02 | 2015-03-01 | Global Unichip Corp | Semiconductor device and associated method |
US9269646B2 (en) * | 2011-11-14 | 2016-02-23 | Micron Technology, Inc. | Semiconductor die assemblies with enhanced thermal management and semiconductor devices including same |
US20150236003A1 (en) * | 2012-09-14 | 2015-08-20 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US9496199B2 (en) * | 2012-12-04 | 2016-11-15 | General Electric Company | Heat spreader with flexible tolerance mechanism |
US9461000B2 (en) * | 2013-05-21 | 2016-10-04 | Esilicon Corporation | Parallel signal via structure |
US9076754B2 (en) * | 2013-08-02 | 2015-07-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC packages with heat sinks attached to heat dissipating rings |
KR102126977B1 (en) * | 2013-08-21 | 2020-06-25 | 삼성전자주식회사 | Semiconductor package |
CN105874590B (en) * | 2013-09-27 | 2019-08-13 | 英特尔公司 | Bilateral formula die package |
US9269694B2 (en) * | 2013-12-11 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with thermal management features for reduced thermal crosstalk and methods of forming same |
US9287248B2 (en) * | 2013-12-12 | 2016-03-15 | Intel Corporation | Embedded memory and power management subpackage |
KR20150085384A (en) * | 2014-01-15 | 2015-07-23 | 삼성전자주식회사 | Semiconductor package and method for manufacturing the same |
US9269700B2 (en) * | 2014-03-31 | 2016-02-23 | Micron Technology, Inc. | Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods |
US10062634B2 (en) | 2016-12-21 | 2018-08-28 | Micron Technology, Inc. | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
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2016
- 2016-12-21 US US15/386,343 patent/US10062634B2/en active Active
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2017
- 2017-11-20 KR KR1020197019913A patent/KR102342690B1/en active IP Right Grant
- 2017-11-20 WO PCT/US2017/062621 patent/WO2018118315A1/en unknown
- 2017-11-20 EP EP17884980.8A patent/EP3559987A4/en active Pending
- 2017-11-20 JP JP2019531054A patent/JP6770648B2/en active Active
- 2017-11-20 CN CN201780072758.8A patent/CN109983572B/en active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160254249A1 (en) * | 2010-02-26 | 2016-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D Semiconductor Package Interposer with Die Cavity |
US20150236002A1 (en) * | 2011-04-22 | 2015-08-20 | Tessera, Inc. | Multi-chip module with stacked face-down connected dies |
US20130093074A1 (en) * | 2011-10-13 | 2013-04-18 | Xilinx, Inc. | Multi-die integrated circuit structure with heat sink |
EP2631943A2 (en) * | 2012-02-24 | 2013-08-28 | Broadcom Corporation | System-in-package with integrated protection socket |
KR20150049164A (en) * | 2013-10-29 | 2015-05-08 | 삼성전자주식회사 | Semiconductor Package Device |
Non-Patent Citations (1)
Title |
---|
See also references of EP3559987A4 * |
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US20180174943A1 (en) | 2018-06-21 |
US20200013694A1 (en) | 2020-01-09 |
US10418303B2 (en) | 2019-09-17 |
US10062634B2 (en) | 2018-08-28 |
EP3559987A4 (en) | 2020-05-20 |
KR20190085176A (en) | 2019-07-17 |
EP3559987A1 (en) | 2019-10-30 |
US20180374774A1 (en) | 2018-12-27 |
CN109983572B (en) | 2020-10-16 |
JP6770648B2 (en) | 2020-10-14 |
TWI683404B (en) | 2020-01-21 |
KR102342690B1 (en) | 2021-12-24 |
JP2020513694A (en) | 2020-05-14 |
CN109983572A (en) | 2019-07-05 |
US10971422B2 (en) | 2021-04-06 |
TW201842637A (en) | 2018-12-01 |
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