WO2018117558A1 - Method and apparatus for manufacturing semiconductor manufacturing parts by using jig - Google Patents

Method and apparatus for manufacturing semiconductor manufacturing parts by using jig Download PDF

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Publication number
WO2018117558A1
WO2018117558A1 PCT/KR2017/014906 KR2017014906W WO2018117558A1 WO 2018117558 A1 WO2018117558 A1 WO 2018117558A1 KR 2017014906 W KR2017014906 W KR 2017014906W WO 2018117558 A1 WO2018117558 A1 WO 2018117558A1
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WO
WIPO (PCT)
Prior art keywords
jig
base material
manufacturing
component
semiconductor manufacturing
Prior art date
Application number
PCT/KR2017/014906
Other languages
French (fr)
Korean (ko)
Inventor
김기원
Original Assignee
주식회사 티씨케이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170170790A external-priority patent/KR102040378B1/en
Application filed by 주식회사 티씨케이 filed Critical 주식회사 티씨케이
Priority to US16/466,271 priority Critical patent/US11367612B2/en
Priority to CN201780076235.0A priority patent/CN110073466B/en
Priority to JP2019532782A priority patent/JP7402046B2/en
Publication of WO2018117558A1 publication Critical patent/WO2018117558A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a method for manufacturing a semiconductor manufacturing part used in a dry etching process and a jig that can be used therein.
  • a plasma treatment technique used in a semiconductor manufacturing process is a method of etching an object using a gas as one of dry etching processes. This is followed by a process of injecting an etching gas into the reaction vessel, ionizing and then accelerating to the wafer surface to physically and chemically remove the wafer surface.
  • This method is widely used because it is easy to control the etching, high productivity, and fine pattern formation of several tens of nm.
  • the technique of forming the deposition layer on the base material can greatly influence the quality of the component for semiconductor manufacturing.
  • the related art in order to form a homogeneous deposition layer on a base material, researches on various deposition techniques have been performed to prevent the deposition layer from being formed unevenly.
  • the uniformity of the deposition layer on the surface supported by the jig was inferior.
  • the vicinity of the base material supported by the jig has a problem in that the deposition material is not uniformly deposited (non-deposition generated).
  • An object of the present invention can provide a method that can eliminate the non-uniformity of the deposition layer that may occur when using a jig in the process of forming a deposition layer using CVD in the semiconductor manufacturing component.
  • the deposition uniformity of the deposition layer formed may be increased, thereby improving the quality of the deposition layer of the product.
  • Method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig has a tapered shape in cross section and increases in width of the cross section in a direction closer to the surface of the base material.
  • the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
  • the angle between the jig and the base material of the contact portion may be 95 to 170 degrees.
  • the jig may include at least one of a group consisting of graphite, carbon black, and SiC.
  • the step of processing may be a cutting process so that at least a portion of the base material is included and at least a portion of the jig covered with the deposition layer is included.
  • the base material may include at least one selected from the group consisting of graphite, TaC, reaction sintered SiC, atmospheric pressure sintered SiC, hot press SiC, recrystallized SiC and CVD SiC.
  • the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1.
  • Another method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig may include rounding at least one side of a cross section connected to a surface contacting the base material.
  • An apparatus for manufacturing a component for manufacturing a semiconductor using a jig includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig for supporting a base material connected to one end of the mounting portion, wherein the jig may have a tapered shape in cross section and an increase in a width of the cross section in a direction closer to the surface of the base material.
  • the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
  • the angle between the jig and the base material of the contact portion may be 95 to 170 degrees.
  • Another apparatus for manufacturing a component for manufacturing a semiconductor using a jig of the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig supporting a base material connected to one end of the mounting part, wherein the jig may include a concave rounded at least one side of a cross section connected to a surface contacting the base material.
  • the jig for fabricating components for semiconductor manufacturing of the present invention supports the base material, and the width of the cross section increases in the direction in which the cross section is tapered and close to the surface of the base material.
  • the jig for manufacturing another component for manufacturing a semiconductor of the present invention supports the base material, and at least one side portion of the cross section connected to the surface contacting the base material is rounded.
  • a homogeneous deposition layer is formed including the contact portion between the jig and the deposit or the base material without any deposition. You can expect the effect.
  • FIG. 1 is a flowchart showing each step of a method for manufacturing a component for semiconductor manufacturing using a jig provided in an embodiment of the present invention.
  • Figure 2 is a cross-sectional view of a structure for supporting the base material with a tapered shape jig provided in an embodiment of the present invention.
  • FIG 3 is an enlarged view showing an enlarged structure of a portion supporting the base material by a tapered jig provided in an embodiment of the present invention.
  • Figure 4 is a cross-sectional view of a structure in which at least one side of the cross section and the surface in contact with the base material provided in another embodiment of the present invention supports the base material with a round jig.
  • FIG. 1 is a flowchart showing each step of a method for manufacturing a component for semiconductor manufacturing using a jig provided in an embodiment of the present invention.
  • Method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention preparing a base material (S10); Supporting at least one surface of the base material with a jig (S20); Forming a deposition layer by spraying a source gas on the base material supported by the jig (S30); And processing the base material on which the deposition layer is formed (S40), wherein the jig includes a tapered shape of the cross section and an increase in the width of the cross section in a direction close to the surface of the base material.
  • the base material 200 shown in FIG. 2 may be a base material for manufacturing a focus ring that may be used in a dry plasma etching apparatus as an example of the base material provided in an aspect of the present invention.
  • the base material of the semiconductor manufacturing part may include a stepped structure formed stepwise according to the specifications and characteristics of the semiconductor manufacturing apparatus to which the semiconductor manufacturing part is applied.
  • the cross section of the step may include a curved surface or the surfaces forming the step may have an obtuse angle.
  • a deposition layer may be formed using a source gas on the prepared base material.
  • the method of forming the deposition layer is not particularly limited in the present invention, but the deposition layer may be formed by injecting a raw material gas into the base material using the CVD method in a sealed chamber.
  • the step of forming the deposition layer may be performed at a temperature of 1000 °C to 1900 °C.
  • the deposition layer may be formed of a material having physical properties suitable for use in the semiconductor manufacturing process.
  • a source gas capable of forming a SiC or TaC deposition layer having excellent plasma resistance to prevent etching.
  • a deposition layer may be evenly formed on the entire surface of the base material in an enclosed space.
  • the entire surface of the deposition layer may be etched, so that an even deposition layer is formed on the front surface layer of the base material to expose the base material to the plasma. Since it is necessary to prevent this, even deposition of the entire surface is essential.
  • a jig for supporting the base material in the chamber may be used.
  • the base material may have a shape in which a minimum area is supported by a jig and floats in the air to induce even deposition on the front surface of the chamber.
  • the jig mentioned in the present invention includes any structure that can be mounted to fix the base material in the chamber.
  • the jig is best formed of a point of contact with the base material, in this case, the support of the base material may become unstable. Therefore, the contact between the jig and the base material is formed in the plane can ensure a stable support structure.
  • the jig may cover the deposition surface from the source gas depending on the angle of the jig and the base material or the shape of the jig. In this case, a space in which no deposition is formed may occur near the contact surface formed by the jig and the base material, or a smaller amount of deposition may be formed than other portions even when the deposition is performed.
  • the SiC deposition layer is thinly formed or an empty space is formed in the area adjacent to the jig so that the base material is easily exposed by the plasma. Can occur.
  • the base material is generally a material having a relatively low plasma resistance, which may be scattered into the chamber, causing a great contamination of the inside of the chamber and deteriorating the quality of the semiconductor product.
  • the jig may have a tapered shape in cross section and an increase in width of the cross section in a direction closer to the surface of the base material.
  • the structure of the jig 110 including a tapered shape of the lower surface of the base material (focus ring) is confirmed.
  • a plurality of the jig may be included to form a stable support structure according to the size, shape of the base material.
  • the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
  • the base material When the angle between the jig and the base material forms an acute angle at the contact portion of the jig and the base material, the base material may be covered by the jig. In this case, the source gas may not be uniformly deposited on the contact portion of the jig and the base material.
  • FIG 3 is an enlarged view showing an enlarged structure of a portion supporting the base material 300 with a tapered jig provided in an embodiment of the present invention.
  • the angle between the jig and the base material forms an obtuse angle at the contact portion of the jig and the base material so that the jig does not cover the surface of the base material from the source gas.
  • the angle between the jig and the base material of the contact portion may be 95 to 170 degrees. According to one embodiment of the invention, the angle between the jig and the base material of the contact portion may be greater than 95 degrees. When the angle is less than 95 degrees, there may be a problem that a homogeneous deposition layer is not formed at the contact portion between the base material and the jig. Meanwhile, an angle formed between the jig and the base material of the contact portion may be less than 170 degrees.
  • the jig may include at least one of a group consisting of graphite, carbon black, and SiC. According to an aspect of the present invention, the jig may be covered with the base material in the deposition layer and then processed together. Therefore, it may be good to select a material on which the source gas can be well deposited.
  • the step of processing may be a cutting process so that at least a portion of the base material is included and at least a portion of the jig covered with the deposition layer is included.
  • the processing step may be to process at least a portion of the formed deposition layer flat.
  • the step of processing may be a cutting process to meet the specifications of the semiconductor manufacturing part, the base material on which the deposition layer is formed.
  • the semiconductor manufacturing component to be formed may include at least a portion of the base material and a deposition layer covered with at least a portion of the jig.
  • the deposition layer is covered thereon in a state in which the jig supports the base material, and the jig and the base material may be in contact with each other to form a component for manufacturing a semiconductor.
  • a part of the jig may be included together in the semiconductor manufacturing part finally formed.
  • the base material may include at least one selected from the group consisting of graphite, TaC, reaction sintered SiC, atmospheric pressure sintered SiC, hot press SiC, recrystallized SiC and CVD SiC.
  • the components of the base material are components that are not easily separated from the SiC deposition layer, and any material that is not easily separated from the SiC layer formed on the surface of the base material may be included as additional components.
  • the base material is preferably a material that is good to be homogeneously formed without separating the deposition layer on the top.
  • the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1.
  • the present invention including the base material may be deposited.
  • the deposition layer may be a material requiring high physical properties, and in this case, the cost of the deposition layer material may be relatively higher than that of the base material. Therefore, according to one embodiment of the present invention, the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1.
  • the ratio of the base material to the thickness of the deposition layer is less than 1, the thickness of the deposition layer is thick, there may be a problem that the production cost increases, and if it exceeds 100, the deposition layer is too thin to expose the base material to the plasma There is a risk.
  • the thickness of the SiC deposition layer means the sum of the vertical length of the thickness deposited on the upper and lower portions of the base material.
  • the thickness of the base material means the vertical length at any arbitrary position even if the base material is a stepped structure, not a rectangular block shape.
  • Another method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig may include rounding at least one side of a cross section connected to a surface contacting the base material.
  • FIG. 4 is a cross-sectional view of a structure in which at least one side of a surface contacting the base material provided in another embodiment of the present invention supports the base material with the rounded jig 120.
  • the shape of the jig provided in one aspect of the present invention may be at least one side of the cross-section rounded.
  • the rounded shape may be formed along the imaginary sphere having the center of the sphere on the outside of the jig.
  • the cross section of the jig thus formed is shown in FIG. 4.
  • the rounded form is not particularly limited in the present invention, as long as it is a structure in which a deposition layer may be evenly formed between the jig and the base material in contact with the jig, but may be formed in a variety of curved surfaces.
  • An apparatus for manufacturing a component for manufacturing a semiconductor using a jig includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig for supporting a base material connected to one end of the mounting portion, wherein the jig may have a tapered shape in cross section and an increase in a width of the cross section in a direction closer to the surface of the base material.
  • the present invention provides an apparatus for manufacturing a component for manufacturing a semiconductor.
  • the manufacturing apparatus may include a mounting unit and a jig connected to one end of the mounting unit.
  • the jig may be replaceable as the deposition of the deposit is completed once.
  • the jig formed at one end of the mount may be separated and replaced while leaving the mount as it is.
  • the mounting part may also be replaced. Although the jig and the mounting part are described separately, they may be formed integrally.
  • the mounting portion may have a structure in which an opposite end of the jig is fixed to at least one side of the chamber.
  • the manufacturing apparatus may be a CVD apparatus.
  • the jig may have a tapered shape in cross section to form a homogeneous deposition layer at the contact portion with the base material as described above.
  • the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
  • the angle formed by the base material of the jig and the contact portion may be 95 to 170 degrees.
  • Another apparatus for manufacturing a component for manufacturing a semiconductor using a jig of the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig supporting a base material connected to one end of the mounting part, wherein the jig may include a concave rounded at least one side of a cross section connected to a surface contacting the base material.
  • the rounded shape may be formed along the imaginary sphere having the center of the sphere on the outside of the jig.
  • the rounded form is not particularly limited in the present invention as long as it is a structure in which a deposition layer may be evenly formed between the jig and the base material in contact with the jig, but may be formed in a variety of curved surfaces.
  • the jig for manufacturing a component for semiconductor manufacturing of the present invention supports the base material, and the width of the cross section increases in the direction in which the cross section is tapered in shape and close to the surface of the base material.
  • the jig for manufacturing another component for manufacturing a semiconductor of the present invention supports the base material, and at least one side portion of the cross section connected to the surface contacting the base material is rounded.

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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention relates to a method for manufacturing semiconductor manufacturing parts used in a dry etching process, and a jig usable therein, and the method for manufacturing semiconductor manufacturing parts by using the jig, of the present invention, comprises the steps of: preparing a base material; supporting at least one surface of the base material by the jig; forming a deposition layer by spraying source gas on the base material supported by the jig; and processing the base material on which the deposition layer is formed, wherein the jig has a tapered cross-section of which the width increases in the direction of approaching the surface of the base material.

Description

지그를 이용한 반도체 제조용 부품의 제조방법 및 제조장치Manufacturing method and manufacturing apparatus for semiconductor manufacturing parts using jig
본 발명은 건식 식각 공정에서 이용되는 반도체 제조용 부품의 제조방법 및이에 이용될 수 있는 지그에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor manufacturing part used in a dry etching process and a jig that can be used therein.
일반적으로, 반도체 제조공정에서 사용되는 플라즈마 처리 기법은, 건식 식각공정 중 하나로서, 가스를 사용하여 대상을 식각하는 방법이다. 이는, 식각 가스를 반응용기 내로 주입시키고, 이온화시킨 후, 웨이퍼 표면으로 가속시켜, 웨이퍼 표면을 물리적, 화학적으로 제거하는 공정을 따른다. 이 방법은 식각의 조절이 용이하고, 생산성이 높으며, 수십 nm 수준의 미세 패턴형성이 가능하여 널리 사용되고 있다.In general, a plasma treatment technique used in a semiconductor manufacturing process is a method of etching an object using a gas as one of dry etching processes. This is followed by a process of injecting an etching gas into the reaction vessel, ionizing and then accelerating to the wafer surface to physically and chemically remove the wafer surface. This method is widely used because it is easy to control the etching, high productivity, and fine pattern formation of several tens of nm.
건식 식각 장치 내의 포커스링을 비롯한 다양한 반도체 제조용 부품들은 플라즈마가 존재하는 가혹한 조건의 반응용기 내에서 식각 처리가 이루어지는 웨이퍼 주변에 플라즈마가 집중되도록 하는 역할들을 수행하며 부품 스스로도 플라즈마에 노출되어 손상되게 된다. 따라서, 반도체 제조용 부품의 내플라즈마 특성을 증가시키기 위한 연구는 지속적으로 수행되어 왔다. 그 중 하나로서, Si 재질 대신 SiC 재질로 형성된 증착층을 반도체 의 포커스링이나 전극 등의 부품에 형성하는 방법에 대한 연구가 수행되어 왔다. Various semiconductor manufacturing components, including focus rings in dry etching apparatuses, serve to concentrate plasma around wafers subjected to etching treatment in reaction vessels in harsh conditions where plasma is present, and the components themselves are exposed to the plasma and are damaged. Therefore, research to increase the plasma resistance of semiconductor manufacturing parts has been continuously conducted. As one of them, research has been conducted on a method of forming a deposition layer formed of a SiC material instead of a Si material on a component such as a focus ring or an electrode of a semiconductor.
이 때, 모재 상에 증착층을 형성하는 기술이 반도체 제조용 부품의 품질을 크게 좌우할 수 있다. 종래에는 모재에 균질한 증착층을 형성하기 위하여, 증착층이 불균일하게 형성되는 것을 방지하기 위한 다양한 방식의 증착 기술에 대한 연구가 수행되어 왔다. At this time, the technique of forming the deposition layer on the base material can greatly influence the quality of the component for semiconductor manufacturing. In the related art, in order to form a homogeneous deposition layer on a base material, researches on various deposition techniques have been performed to prevent the deposition layer from being formed unevenly.
종래의 기술들은 증착 챔버 내에서 피증착물 또는 모재를 지그로 지지한 상태에서 전면에 증착을 수행하였기 때문에, 지그로 지지하고 있는 면의 증착층의 균일성이 떨어지는 문제가 있었다. 특히, 지그가 각진 형태 또는 볼록한 형태로 형성된 구조의 경우, 지그에 의하여 지지되는 모재의 부근은 증착 물질이 균질하게 증착되지 않는(비증착부 발생) 문제가 있었다. In the prior art, since the deposition was performed on the entire surface of the deposition chamber or the base material in the deposition chamber with the jig, the uniformity of the deposition layer on the surface supported by the jig was inferior. In particular, in the case of the structure in which the jig is formed in an angular form or convex form, the vicinity of the base material supported by the jig has a problem in that the deposition material is not uniformly deposited (non-deposition generated).
본 발명의 목적은 반도체 제조용 부품에 CVD 를 이용하여 증착층을 형성하는 과정에서 지그를 사용할 경우 발생할 수 있는 증착층의 불균일성을 해소할 수 있는 방법을 제공할 수 있다. 본 발명의 일 측면에서 사용하는 지그를 이용하여 증착층을 형성할 경우 형성되는 증착층의 증착 균일도가 증가하여, 제품의 증착층의 품질을 높일 수 있다. An object of the present invention can provide a method that can eliminate the non-uniformity of the deposition layer that may occur when using a jig in the process of forming a deposition layer using CVD in the semiconductor manufacturing component. When the deposition layer is formed using the jig used in one aspect of the present invention, the deposition uniformity of the deposition layer formed may be increased, thereby improving the quality of the deposition layer of the product.
그러나, 본 발명이 해결하고자 하는 과제는 이상에서 언급한 과제로 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 해당 기술분야의 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.However, the problem to be solved by the present invention is not limited to the above-mentioned problem, another task that is not mentioned will be clearly understood by those skilled in the art from the following description.
본 발명의 지그를 이용한 반도체 제조용 부품의 제조방법은, 모재를 준비하는 단계; 지그로 상기 모재의 적어도 일 면을 지지하는 단계; 상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계; 및 증착층이 형성된 상기 모재를 가공하는 단계;를 포함하고, 상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것이다.Method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention, preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig has a tapered shape in cross section and increases in width of the cross section in a direction closer to the surface of the base material.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 모재의 접촉 부분에서, 상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것일 수 있다.According to one embodiment of the present invention, in the contact portion of the jig and the base material, the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 내지 170 도인 것일 수 있다.According to one embodiment of the present invention, the angle between the jig and the base material of the contact portion may be 95 to 170 degrees.
본 발명의 일 실시예에 따르면, 상기 지그는, 그라파이트, 카본블랙 및 SiC 로 이루어진 군에서 적어도 어느 하나를 포함하는 것일 수 있다. According to one embodiment of the present invention, the jig may include at least one of a group consisting of graphite, carbon black, and SiC.
본 발명의 일 실시예에 따르면, 상기 가공하는 단계는, 상기 모재의 적어도 일부가 포함되고 상기 지그의 적어도 일부가 덮인 증착층이 포함되도록 절삭 가공하는 것일 수 있다.According to one embodiment of the invention, the step of processing, may be a cutting process so that at least a portion of the base material is included and at least a portion of the jig covered with the deposition layer is included.
본 발명의 일 실시예에 따르면, 상기 모재는, 그라파이트, TaC, 반응소결 SiC, 상압소결 SiC, 핫프레스 SiC, 재결정 SiC 및 CVD SiC로 이루어진 군에서 선택되는 적어도 어느 하나를 포함하는 것일 수 있다.According to an embodiment of the present invention, the base material may include at least one selected from the group consisting of graphite, TaC, reaction sintered SiC, atmospheric pressure sintered SiC, hot press SiC, recrystallized SiC and CVD SiC.
본 발명의 일 실시예에 따르면, 상기 모재 및 증착층의 두께 비는 1 : 1 내지 100 : 1 인 것일 수 있다.According to one embodiment of the present invention, the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1.
본 발명의 지그를 이용한 반도체 제조용 부품의 다른 제조방법은, 모재를 준비하는 단계; 지그로 상기 모재의 적어도 일 면을 지지하는 단계; 상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계; 및 상기 증착층이 형성된 상기 모재를 가공하는 단계;를 포함하고, 상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 것을 포함할 수 있다.Another method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention, preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig may include rounding at least one side of a cross section connected to a surface contacting the base material.
본 발명의 지그를 이용한 반도체 제조용 부품의 제조장치는, 챔버; 상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐; 상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및 상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고, 상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것일 수 있다. An apparatus for manufacturing a component for manufacturing a semiconductor using a jig according to the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig for supporting a base material connected to one end of the mounting portion, wherein the jig may have a tapered shape in cross section and an increase in a width of the cross section in a direction closer to the surface of the base material.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 모재의 접촉 부분에서, 상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것일 수 있다.According to one embodiment of the present invention, in the contact portion of the jig and the base material, the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 내지 170 도인 것일 수 있다.According to one embodiment of the present invention, the angle between the jig and the base material of the contact portion may be 95 to 170 degrees.
본 발명의 지그를 이용한 반도체 제조용 부품의 다른 제조장치는, 챔버; 상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐; 상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및 상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고, 상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 오목하게 라운드진 것을 포함할 수 있다.Another apparatus for manufacturing a component for manufacturing a semiconductor using a jig of the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig supporting a base material connected to one end of the mounting part, wherein the jig may include a concave rounded at least one side of a cross section connected to a surface contacting the base material.
본 발명의 반도체 제조용 부품 제조를 위한 지그는, 모재를 지지하고, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것이다.The jig for fabricating components for semiconductor manufacturing of the present invention supports the base material, and the width of the cross section increases in the direction in which the cross section is tapered and close to the surface of the base material.
본 발명의 다른 반도체 제조용 부품 제조를 위한 지그는, 모재를 지지하고, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 것이다.The jig for manufacturing another component for manufacturing a semiconductor of the present invention supports the base material, and at least one side portion of the cross section connected to the surface contacting the base material is rounded.
본 발명의 제조방법 또는 지그를 이용할 경우, CVD 등 증착 기법을 이용해서반도체 제조용 부품을 제조할 때, 증착이 되지 않는 면 없이 지그와 피증착물 또는 모재 간의 접촉부를 포함해서 균질한 증착층이 형성되는 효과를 기대할 수 있다. In the case of using the manufacturing method or jig of the present invention, when manufacturing a component for manufacturing a semiconductor using a deposition technique such as CVD, a homogeneous deposition layer is formed including the contact portion between the jig and the deposit or the base material without any deposition. You can expect the effect.
도 1은, 본 발명의 일 실시예에서 제공하는 지그를 이용한 반도체 제조용 부품의 제조방법의 각 단계를 도시한 순서도이다.1 is a flowchart showing each step of a method for manufacturing a component for semiconductor manufacturing using a jig provided in an embodiment of the present invention.
도 2는, 본 발명의 일 실시예에서 제공하는 테이퍼진 형상의 지그로 모재를 지지하는 구조의 단면도가 도시되어 있다.Figure 2 is a cross-sectional view of a structure for supporting the base material with a tapered shape jig provided in an embodiment of the present invention.
도 3은, 본 발명의 일 실시예에서 제공하는 테이퍼진 형상의 지그로 모재를 지지하는 부분의 구조를 확대한 확대도가 도시되어 있다.3 is an enlarged view showing an enlarged structure of a portion supporting the base material by a tapered jig provided in an embodiment of the present invention.
도 4는, 본 발명의 다른 일 실시예에서 제공하는 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 지그로 모재를 지지하는 구조의 단면도가 도시되어 있다.Figure 4 is a cross-sectional view of a structure in which at least one side of the cross section and the surface in contact with the base material provided in another embodiment of the present invention supports the base material with a round jig.
이하에서, 첨부된 도면을 참조하여 실시예들을 상세하게 설명한다. 각 도면에 제시된 동일한 참조 부호는 동일한 부재를 나타낸다.Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.
아래 설명하는 실시예들에는 다양한 변경이 가해질 수 있다. 아래 설명하는 실시예들은 실시 형태에 대해 한정하려는 것이 아니며, 이들에 대한 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.Various modifications may be made to the embodiments described below. The examples described below are not intended to be limited to the embodiments and should be understood to include all modifications, equivalents, and substitutes for them.
실시예에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 실시예를 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 명세서에서, "포함하다" 또는 "가지다" 등의 용어는 명세서 상에 기재된 특징, 숫자, 단계, 동작, 구성 요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성 요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of examples. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described on the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 실시예가 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.
또한, 첨부 도면을 참조하여 설명함에 있어, 도면 부호에 관계없이 동일한 구성 요소는 동일한 참조 부호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다. 실시예를 설명함에 있어서 관련된 공지 기술에 대한 구체적인 설명이 실시예의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다.In addition, in the description with reference to the accompanying drawings, the same components regardless of reference numerals will be given the same reference numerals and redundant description thereof will be omitted. In the following description of the embodiment, when it is determined that the detailed description of the related known technology may unnecessarily obscure the gist of the embodiment, the detailed description thereof will be omitted.
도 1은, 본 발명의 일 실시예에서 제공하는 지그를 이용한 반도체 제조용 부품의 제조방법의 각 단계를 도시한 순서도이다.1 is a flowchart showing each step of a method for manufacturing a component for semiconductor manufacturing using a jig provided in an embodiment of the present invention.
본 발명의 지그를 이용한 반도체 제조용 부품의 제조방법은, 모재를 준비하는 단계(S10); 지그로 상기 모재의 적어도 일 면을 지지하는 단계(S20); 상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계(S30); 및 증착층이 형성된 상기 모재를 가공하는 단계(S40);를 포함하고, 상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것을 포함하는 것이다.Method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention, preparing a base material (S10); Supporting at least one surface of the base material with a jig (S20); Forming a deposition layer by spraying a source gas on the base material supported by the jig (S30); And processing the base material on which the deposition layer is formed (S40), wherein the jig includes a tapered shape of the cross section and an increase in the width of the cross section in a direction close to the surface of the base material.
도 2는, 본 발명의 일 실시예에서 제공하는 테이퍼진 형상의 지그(110) 로 모재를(200) 지지하는 구조의 단면도가 도시되어 있다. 도 2에 도시된 모재(200)는 본 발명의 일 측면에서 제공하는 모재 중 일 예로서, 건식 플라즈마 에칭 장치에서 사용될 수 있는 포커스링을 제조하기 위한 모재일 수 있다. 본 발명의 일 실시예에 따르면, 상기 도 2에는 도시되지 않았으나 상기 반도체 제조용 부품이 적용되는 반도체 제조장치의 스펙과 특성에 따라 상기 반도체 제조용 부품의 모재는 단차있게 형성된 계단식 구조를 포함할 수도 있다. 본 발명의 일 실시예에 따르면, 상기 단차의 단면이, 곡면을 포함하거나 상기 단차를 이루는 면들이 둔각을 이루는 것일 수도 있다. 2 is a cross-sectional view of a structure for supporting the base material 200 with a tapered jig 110 provided in an embodiment of the present invention. The base material 200 shown in FIG. 2 may be a base material for manufacturing a focus ring that may be used in a dry plasma etching apparatus as an example of the base material provided in an aspect of the present invention. According to one embodiment of the present invention, although not shown in FIG. 2, the base material of the semiconductor manufacturing part may include a stepped structure formed stepwise according to the specifications and characteristics of the semiconductor manufacturing apparatus to which the semiconductor manufacturing part is applied. According to an embodiment of the present invention, the cross section of the step may include a curved surface or the surfaces forming the step may have an obtuse angle.
본 발명의 일 측면에 따르면, 준비된 모재 상에 원료 가스를 이용하여 증착층을 형성할 수 있다. 이 때, 증착층을 형성하는 방법은 본 발명에서 특별히 한정하지 아니하나, 밀폐된 챔버 내에서 CVD법을 이용해 모재에 원료 가스를 분사하여 증착층을 형성할 수 있다. 본 발명의 일 측면에 따르면, 상기 증착층을 형성하는 단계는, 1000 ℃ 내지 1900 ℃ 온도에서 수행되는 것일 수 있다.According to an aspect of the present invention, a deposition layer may be formed using a source gas on the prepared base material. In this case, the method of forming the deposition layer is not particularly limited in the present invention, but the deposition layer may be formed by injecting a raw material gas into the base material using the CVD method in a sealed chamber. According to an aspect of the invention, the step of forming the deposition layer may be performed at a temperature of 1000 ℃ to 1900 ℃.
이 때, 상기 증착층은 반도체 제조과정에서 이용되기에 적합한 물성을 지닌 소재로 형성되는 것이 좋다. 예를 들어, 건식 식각 장치에서 플라즈마에 노출되기 쉬운 부품일 경우, 식각을 방지하기 위해 내플라즈마 특성이 우수한 SiC 또는 TaC 증착층을 형성할 수 있는 원료 가스를 분사하는 것이 좋다. In this case, the deposition layer may be formed of a material having physical properties suitable for use in the semiconductor manufacturing process. For example, in the case of a component that is easily exposed to plasma in a dry etching apparatus, it is preferable to spray a source gas capable of forming a SiC or TaC deposition layer having excellent plasma resistance to prevent etching.
본 발명의 일 측면에 따르는 반도체 제조용 부품은, 밀폐된 공간 내에서 모재의 전체 면에 고르게 증착층이 형성될 수 있다. 예를 들어 포커스링의 경우, 플라즈마가 포커스링에 가해짐으로써 증착층의 전면(全面)에서 식각을 유발할 수 있기 때문에, 상기 모재의 전면 표층 상에 고른 증착층을 형성하여 모재가 플라즈마에 노출되는 것을 막을 필요가 있기 때문에, 전체 면의 고른 증착이 필수적이다. In the component for manufacturing a semiconductor according to an aspect of the present invention, a deposition layer may be evenly formed on the entire surface of the base material in an enclosed space. For example, in the case of the focus ring, since the plasma is applied to the focus ring, the entire surface of the deposition layer may be etched, so that an even deposition layer is formed on the front surface layer of the base material to expose the base material to the plasma. Since it is necessary to prevent this, even deposition of the entire surface is essential.
이 때, 모재를 챔버 내에서 지지하기 위한 지그가 이용될 수 있다. 상기 모재는 챔버 내에서 전면에 고른 증착을 유도하기 위해 가급적 최소의 면적이 지그에 의해 지지되어 공중에 떠 있는 형태일 수 있다. 본 발명에서 언급하는 지그는, 모재를 챔버 내에서 고정되도록 안착시킬 수 있는 구조라면 모두 포함하여 지칭한다. At this time, a jig for supporting the base material in the chamber may be used. The base material may have a shape in which a minimum area is supported by a jig and floats in the air to induce even deposition on the front surface of the chamber. The jig mentioned in the present invention includes any structure that can be mounted to fix the base material in the chamber.
이 때, 지그는 상기 모재와의 접점이 점으로 형성되는 것이 가장 좋지만, 이 경우 모재의 지지가 불안정해 질 수 있다. 때문에 지그와 모재와의 접점은 면으로 형성되어 안정적인 지지 구조를 확보할 수 있다. At this time, the jig is best formed of a point of contact with the base material, in this case, the support of the base material may become unstable. Therefore, the contact between the jig and the base material is formed in the plane can ensure a stable support structure.
다만, 지그의 형태에 따라 지그와 모재와의 접촉면 부근에서 불균일한 증착이 유도될 수 있다. 특히, 지그와 모재와 이루는 각도 또는 지그의 형태에 따라 원료 가스로부터 증착면을 지그가 가리우는 경우가 생길 수 있다. 이 경우 지그와 모재가 이루는 접촉면 근처에는 증착이 아예 형성되지 않는 공간이 발생하거나 또는 증착이 되더라도 다른 부분에 비해 적은 양의 증착이 형성될 수 있다. However, depending on the shape of the jig, uneven deposition may be induced near the contact surface between the jig and the base material. In particular, the jig may cover the deposition surface from the source gas depending on the angle of the jig and the base material or the shape of the jig. In this case, a space in which no deposition is formed may occur near the contact surface formed by the jig and the base material, or a smaller amount of deposition may be formed than other portions even when the deposition is performed.
예를 들어 포커스 링의 모재에 SiC를 증착할 경우를 생각해 보면, 지그의 형태에 따라 지그와 인접한 부분에는 SiC 증착층이 얇게 형성되거나 또는 빈 공간이 형성되어 플라즈마에 의해 모재가 손쉽게 노출되는 문제가 생길 수 있다. 모재가 플라즈마에 노출되면 모재는 일반적으로 내플라즈마 특성이 상대적으로 약한 소재이기 때문에 챔버 내로 비산되어 챔버 내부를 크게 오염시키고 반도체 제품의 품질을 저하시키는 치명적인 원인이 될 수 있다.For example, in the case of depositing SiC on the base material of the focus ring, depending on the shape of the jig, there is a problem that the SiC deposition layer is thinly formed or an empty space is formed in the area adjacent to the jig so that the base material is easily exposed by the plasma. Can occur. When the base material is exposed to the plasma, the base material is generally a material having a relatively low plasma resistance, which may be scattered into the chamber, causing a great contamination of the inside of the chamber and deteriorating the quality of the semiconductor product.
따라서, 본 발명의 일 측면에서는 상기 지그의 형태를 디자인하여 반도체 제조용 부품을 제조할 경우에 증착층이 형성되지 않는 부분이 없이 지그의 지지에도 불구하고 가급적 균질한 품질의 증착층을 전면(全面)에 형성할 수 있는 방법을 제공하는 것이다.Therefore, in one aspect of the present invention, when manufacturing a component for manufacturing a semiconductor by designing the shape of the jig, there is no portion in which no deposition layer is formed, and despite the support of the jig, the entire deposition layer of homogeneous quality is possible. It is to provide a method that can be formed.
이 때, 본 발명의 일 측면에 따르면 상기 지그는 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것일 수 있다. 도 2를 보면, 모재(포커스링)의 하면을 단면이 테이퍼진 형태를 포함하는 지그(110)들이 지지하고 있는 구조를 확인할 수 있다. 이 때, 상기 지그는 모재의 크기, 형상에 따라 안정된 지지 구조를 형성하도록 복수 개 포함될 수도 있다. At this time, according to an aspect of the present invention, the jig may have a tapered shape in cross section and an increase in width of the cross section in a direction closer to the surface of the base material. Referring to FIG. 2, the structure of the jig 110 including a tapered shape of the lower surface of the base material (focus ring) is confirmed. At this time, a plurality of the jig may be included to form a stable support structure according to the size, shape of the base material.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 모재의 접촉 부분에서, 상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것일 수 있다.According to one embodiment of the present invention, in the contact portion of the jig and the base material, the angle formed by the base material of the jig and the contact portion may be an obtuse angle.
지그와 모재의 접촉 부분에서 지그와 모재가 이루는 각이 예각을 이룰 경우에는 지그에 의해 모재가 가리워질 수 있다. 이 경우 원료 가스가 지그와 모재의 접촉 부분에 균질하게 증착되지 않을 수 있다. When the angle between the jig and the base material forms an acute angle at the contact portion of the jig and the base material, the base material may be covered by the jig. In this case, the source gas may not be uniformly deposited on the contact portion of the jig and the base material.
도 3은, 본 발명의 일 실시예에서 제공하는 테이퍼진 형상의 지그로 모재(300)를 지지하는 부분의 구조를 확대한 확대도가 도시되어 있다.3 is an enlarged view showing an enlarged structure of a portion supporting the base material 300 with a tapered jig provided in an embodiment of the present invention.
도 3을 참고하면, 지그와 모재의 접촉 부분에서 지그와 모재가 이루는 각이 둔각을 이루어야 지그가 모재의 면을 원료 가스로부터 가리지 않게 됨을 확인할 수 있다.Referring to FIG. 3, it can be seen that the angle between the jig and the base material forms an obtuse angle at the contact portion of the jig and the base material so that the jig does not cover the surface of the base material from the source gas.
본 발명의 일 실시예에 따르면, 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 내지 170 도인 것일 수 있다. 본 발명의 일 실시예에 따르면, 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 초과인 것일 수 있다. 상기 각이 95도 미만의 경우에는 모재와 지그 간의 접촉 부분에 균질한 증착층이 형성되지 않는 문제가 생길 수 있다. 한편 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 170도 미만일 수 있다. According to one embodiment of the present invention, the angle between the jig and the base material of the contact portion may be 95 to 170 degrees. According to one embodiment of the invention, the angle between the jig and the base material of the contact portion may be greater than 95 degrees. When the angle is less than 95 degrees, there may be a problem that a homogeneous deposition layer is not formed at the contact portion between the base material and the jig. Meanwhile, an angle formed between the jig and the base material of the contact portion may be less than 170 degrees.
본 발명의 일 실시예에 따르면, 상기 지그는, 그라파이트, 카본블랙 및 SiC 로 이루어진 군에서 적어도 어느 하나를 포함하는 것일 수 있다. 본 발명의 일 측면에 따르면, 상기 지그는 모재와 함께 증착층에 덮일 수도 있고 이 후 함께 가공될 수도 있다. 따라서 원료 가스가 잘 증착될 수 있는 소재를 선택하는 것이 좋을 수 있다.According to one embodiment of the present invention, the jig may include at least one of a group consisting of graphite, carbon black, and SiC. According to an aspect of the present invention, the jig may be covered with the base material in the deposition layer and then processed together. Therefore, it may be good to select a material on which the source gas can be well deposited.
본 발명의 일 실시예에 따르면, 상기 가공하는 단계는, 상기 모재의 적어도 일부가 포함되고 상기 지그의 적어도 일부가 덮인 증착층이 포함되도록 절삭 가공하는 것일 수 있다.According to one embodiment of the invention, the step of processing, may be a cutting process so that at least a portion of the base material is included and at least a portion of the jig covered with the deposition layer is included.
본 발명에서 상기 가공하는 단계는, 형성된 증착층의 적어도 일부를 평탄하게 가공하는 것일 수 있다. 또한, 상기 가공하는 단계는 증착층이 형성된 모재를 반도체 제조용 부품의 스펙에 맞도록 절삭 가공하는 것일 수 있다. 이 때, 본 발명의 일 측면에 따르면, 형성되는 반도체 제조용 부품에는 모재의 적어도 일부가 포함되고 상기 지그의 적어도 일부가 덮인 증착층이 포함될 수 있다. In the present invention, the processing step may be to process at least a portion of the formed deposition layer flat. In addition, the step of processing may be a cutting process to meet the specifications of the semiconductor manufacturing part, the base material on which the deposition layer is formed. At this time, according to an aspect of the present invention, the semiconductor manufacturing component to be formed may include at least a portion of the base material and a deposition layer covered with at least a portion of the jig.
즉, 지그가 모재를 지지한 상태에서 그 위로 증착층이 덮이고, 가공하는 단계에서 상기 지그와 모재가 접촉한 부분을 포함해서 반도체 제조용 부품을 형성하는 것일 수 있다. 이 때 최종적으로 형성되는 반도체 제조용 부품에는 상기 지그의 일부가 함께 포함되는 것일 수 있다.That is, the deposition layer is covered thereon in a state in which the jig supports the base material, and the jig and the base material may be in contact with each other to form a component for manufacturing a semiconductor. In this case, a part of the jig may be included together in the semiconductor manufacturing part finally formed.
본 발명의 일 실시예에 따르면, 상기 모재는, 그라파이트, TaC, 반응소결 SiC, 상압소결 SiC, 핫프레스 SiC, 재결정 SiC 및 CVD SiC로 이루어진 군에서 선택되는 적어도 어느 하나를 포함하는 것일 수 있다. 상기 모재의 성분들은 SiC 증착층과 쉽게 분리되지 않는 성분들이며, 모재 표면에 형성되는 SiC 층과 쉽게 분리되지 않는 소재라면 어떠한 것이라도 더 추가적인 성분으로 포함될 수 있다. 모재는 증착층이 상부에 분리됨 없이 균질하게 형성되기 좋은 소재인 것이 좋다.According to an embodiment of the present invention, the base material may include at least one selected from the group consisting of graphite, TaC, reaction sintered SiC, atmospheric pressure sintered SiC, hot press SiC, recrystallized SiC and CVD SiC. The components of the base material are components that are not easily separated from the SiC deposition layer, and any material that is not easily separated from the SiC layer formed on the surface of the base material may be included as additional components. The base material is preferably a material that is good to be homogeneously formed without separating the deposition layer on the top.
본 발명의 일 실시예에 따르면, 상기 모재 및 증착층의 두께 비는 1 : 1 내지 100 : 1 인 것일 수 있다.According to one embodiment of the present invention, the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1.
본 발명은, 모재를 포함하여 증착하는 것일 수 있다. 본 발명의 일 실시예에서는 증착층을 포함하면서도 두꺼운 반도체 제조용 부품을 형성할 때에는 모재를 두껍게 형성하면서, 증착층을 상대적으로 얇게 형성할 수 있다. 증착층은 높은 물성을 요구하는 소재가 사용될 수 있고 그 경우 증착층 소재의 비용이 모재의 소재보다 상대적으로 고가일 수 있기 때문이다. 따라서, 본 발명의 일 실시예에 따르면, 상기 모재 및 증착층의 두께 비는 1 : 1 내지 100 : 1 일 수 있다. 상기 증착층의 두께 대비 모재의 비가 1 보다 작을 경우, 증착층의 두께가 두꺼워져, 생산 단가가 증가하는 문제가 있을 수 있고, 100을 넘어갈 경우, 상대적으로 증착층이 너무 얇아져 플라즈마에 모재가 노출될 위험이 있다. The present invention, including the base material may be deposited. In one embodiment of the present invention, when forming a thick semiconductor manufacturing part, including a deposition layer, while forming a thick base material, it is possible to form a relatively thin deposition layer. This is because the deposition layer may be a material requiring high physical properties, and in this case, the cost of the deposition layer material may be relatively higher than that of the base material. Therefore, according to one embodiment of the present invention, the thickness ratio of the base material and the deposition layer may be 1: 1 to 100: 1. When the ratio of the base material to the thickness of the deposition layer is less than 1, the thickness of the deposition layer is thick, there may be a problem that the production cost increases, and if it exceeds 100, the deposition layer is too thin to expose the base material to the plasma There is a risk.
이 때, 상기 SiC 증착층의 두께는 상기 모재의 상부 및 하부에 증착된 두께의 수직 길이의 합을 의미한다. 이 때, 상기 모재의 두께는 모재가 직사각형의 블록 형태가 아닌 단차있게 형성된 구조일지라도 모든 임의의 위치에서의 수직 길이를 의미한다.At this time, the thickness of the SiC deposition layer means the sum of the vertical length of the thickness deposited on the upper and lower portions of the base material. At this time, the thickness of the base material means the vertical length at any arbitrary position even if the base material is a stepped structure, not a rectangular block shape.
본 발명의 지그를 이용한 반도체 제조용 부품의 다른 제조방법은, 모재를 준비하는 단계; 지그로 상기 모재의 적어도 일 면을 지지하는 단계; 상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계; 및 상기 증착층이 형성된 상기 모재를 가공하는 단계;를 포함하고, 상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 것을 포함할 수 있다.Another method for manufacturing a component for manufacturing a semiconductor using a jig of the present invention, preparing a base material; Supporting at least one surface of the base material with a jig; Forming a deposition layer by spraying a source gas on the base material supported by the jig; And processing the base material on which the deposition layer is formed, wherein the jig may include rounding at least one side of a cross section connected to a surface contacting the base material.
도 4는, 본 발명의 다른 일 실시예에서 제공하는 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 지그(120)로 모재를 지지하는 구조의 단면도가 도시되어 있다.FIG. 4 is a cross-sectional view of a structure in which at least one side of a surface contacting the base material provided in another embodiment of the present invention supports the base material with the rounded jig 120.
테이퍼진 지그와 동일한 목적으로, 본 발명의 일 측면에서 제공하는 지그의 형상은 단면의 적어도 일 측부가 라운드진 형태일 수 있다. 이 때, 라운드진 형태는 지그의 외부에 구의 중심을 갖는 가상의 구면을 따라 형성되는 것일 수 있다. 이렇게 형성된 지그의 단면이 도 4에 도시되어 있다. 또한 상기 라운드진 형태는 지그와 지그가 접촉하는 모재 간에 고르게 증착층이 형성될 수 있는 구조라면 본 발명에서 특별히 한정하지 아니하나, 다양한 곡면이 이어진 형태로 형성된 것일 수도 있다.For the same purpose as the tapered jig, the shape of the jig provided in one aspect of the present invention may be at least one side of the cross-section rounded. At this time, the rounded shape may be formed along the imaginary sphere having the center of the sphere on the outside of the jig. The cross section of the jig thus formed is shown in FIG. 4. In addition, the rounded form is not particularly limited in the present invention, as long as it is a structure in which a deposition layer may be evenly formed between the jig and the base material in contact with the jig, but may be formed in a variety of curved surfaces.
본 발명의 지그를 이용한 반도체 제조용 부품의 제조장치는, 챔버; 상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐; 상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및 상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고, 상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것일 수 있다. An apparatus for manufacturing a component for manufacturing a semiconductor using a jig according to the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig for supporting a base material connected to one end of the mounting portion, wherein the jig may have a tapered shape in cross section and an increase in a width of the cross section in a direction closer to the surface of the base material.
본 발명의 다른 일 측면에서는 반도체 제조용 부품의 제조장치를 제공한다. 상기 제조장치는 탑재부와 탑재부의 일 단부에 연결 설치되는 지그를 포함할 수 있다. 상기 지그는 피증착물의 증착이 1회 완료됨에 따라 교체 가능한 것일 수 있다.본 발명의 일 측면에 따르면 이 때, 탑재부를 그대로 둔 채, 탑재부의 일 단부에 형성된 지그만 분리 교체 하는 구조일 수 있고, 탑재부도 함께 교체하는 구조일 수도 있다. 상기 지그와 상기 탑재부는 분리하여 기재하였지만 일체로 형성되는 것일 수도 있다. 상기 탑재부는 지그의 반대쪽 단부가 챔버의 적어도 일 측에 고정 설치된 구조일 수 있다. 상기 제조장치는 CVD 장치일 수 있다.In another aspect, the present invention provides an apparatus for manufacturing a component for manufacturing a semiconductor. The manufacturing apparatus may include a mounting unit and a jig connected to one end of the mounting unit. The jig may be replaceable as the deposition of the deposit is completed once. According to an aspect of the present invention, the jig formed at one end of the mount may be separated and replaced while leaving the mount as it is. The mounting part may also be replaced. Although the jig and the mounting part are described separately, they may be formed integrally. The mounting portion may have a structure in which an opposite end of the jig is fixed to at least one side of the chamber. The manufacturing apparatus may be a CVD apparatus.
이 때 상기 지그는 상술했던 바와 같이 모재와의 접촉 부분에서 균질한 증착층을 형성하기 위해 단면이 테이퍼진 형상일 수 있다. 또한, 상기 지그와 상기 모재의 접촉 부분에서, 상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것일 수 있다. 또한, 상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 내지 170 도인 것일 수 있다.At this time, the jig may have a tapered shape in cross section to form a homogeneous deposition layer at the contact portion with the base material as described above. In addition, in the contact portion of the jig and the base material, the angle formed by the base material of the jig and the contact portion may be an obtuse angle. In addition, the angle formed by the base material of the jig and the contact portion may be 95 to 170 degrees.
본 발명의 지그를 이용한 반도체 제조용 부품의 다른 제조장치는, 챔버; 상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐; 상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및 상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고, 상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 오목하게 라운드진 것을 포함할 수 있다. Another apparatus for manufacturing a component for manufacturing a semiconductor using a jig of the present invention includes a chamber; A source gas injection nozzle installed inside the chamber from the outside; A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And a replaceable jig supporting a base material connected to one end of the mounting part, wherein the jig may include a concave rounded at least one side of a cross section connected to a surface contacting the base material.
이 때, 라운드진 형태는 지그의 외부에 구의 중심을 갖는 가상의 구면을 따라 형성되는 것일 수 있다. 또한 상기 라운드진 형태는 지그와 지그가 접촉하는 모재 간에 고르게 증착층이 형성될 수 있는 구조라면 본 발명에서 특별히 한정하지 아니하나, 다양한 곡면이 이어진 형태로 형성된 것일 수도 있다. At this time, the rounded shape may be formed along the imaginary sphere having the center of the sphere on the outside of the jig. In addition, the rounded form is not particularly limited in the present invention as long as it is a structure in which a deposition layer may be evenly formed between the jig and the base material in contact with the jig, but may be formed in a variety of curved surfaces.
본 발명의 반도체 제조용 부품 제조를 위한 지그는, 모재를 지지하고, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것이다..The jig for manufacturing a component for semiconductor manufacturing of the present invention supports the base material, and the width of the cross section increases in the direction in which the cross section is tapered in shape and close to the surface of the base material.
본 발명의 다른 반도체 제조용 부품 제조를 위한 지그는, 모재를 지지하고, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 것이다.The jig for manufacturing another component for manufacturing a semiconductor of the present invention supports the base material, and at least one side portion of the cross section connected to the surface contacting the base material is rounded.
이상과 같이 실시예들이 비록 한정된 실시예와 도면에 의해 설명되었으나, 해당 기술분야에서 통상의 지식을 가진 자라면 상기의 기재로부터 다양한 수정 및 변형이 가능하다. 예를 들어, 설명된 기술들이 설명된 방법과 다른 순서로 수행되거나, 및/또는 설명된 구성요소들이 설명된 방법과 다른 형태로 결합 또는 조합되거나, 다른 구성요소 또는 균등물에 의하여 대치되거나 치환되더라도 적절한 결과가 달성될 수 있다.Although the embodiments have been described by the limited embodiments and the drawings as described above, various modifications and variations are possible to those skilled in the art from the above description. For example, the techniques described may be performed in a different order than the described method, and / or the components described may be combined or combined in a different form than the described method, or replaced or substituted by other components or equivalents. Appropriate results can be achieved.
그러므로, 다른 구현들, 다른 실시예들 및 특허청구범위와 균등한 것들도 후술하는 특허청구범위의 범위에 속한다.Therefore, other implementations, other embodiments, and equivalents to the claims are within the scope of the claims that follow.

Claims (14)

  1. 모재를 준비하는 단계; Preparing a base material;
    지그로 상기 모재의 적어도 일 면을 지지하는 단계;Supporting at least one surface of the base material with a jig;
    상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계; 및Forming a deposition layer by spraying a source gas on the base material supported by the jig; And
    상기 증착층이 형성된 상기 모재를 가공하는 단계;를 포함하고,Processing the base material on which the deposition layer is formed;
    상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것인,The jig is that the cross section is tapered in shape and the width of the cross section increases in a direction approaching the surface of the base material,
    지그를 이용한 반도체 제조용 부품의 제조방법. A method for manufacturing a component for semiconductor manufacturing using a jig.
  2. 제1항에 있어서,The method of claim 1,
    상기 지그와 상기 모재의 접촉 부분에서, 상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것인,In the contact portion of the jig and the base material, the angle between the jig and the base material of the contact portion forms an obtuse angle,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  3. 제2항에 있어서,The method of claim 2,
    상기 지그와 상기 접촉 부분의 모재가 이루는 각은 95 도 내지 170 도인 것인,The angle of the base material of the jig and the contact portion is 95 to 170 degrees,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  4. 제1항에 있어서,The method of claim 1,
    상기 지그는, 그라파이트, 카본블랙 및 SiC 로 이루어진 군에서 적어도 어느 하나를 포함하는 것인, The jig, at least one of the group consisting of graphite, carbon black and SiC,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  5. 제1항에 있어서, The method of claim 1,
    상기 가공하는 단계는, 상기 모재의 적어도 일부가 포함되고 상기 지그의 적어도 일부가 덮인 증착층이 포함되도록 절삭 가공하는 것인,The processing step, the cutting process so that at least a portion of the base material is included and at least a portion of the jig covered with the deposition layer,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  6. 제1항에 있어서, The method of claim 1,
    상기 모재는, 그라파이트, TaC, 반응소결 SiC, 상압소결 SiC, 핫프레스 SiC, 재결정 SiC 및 CVD SiC로 이루어진 군에서 선택되는 적어도 어느 하나를 포함하는 것인, The base material, including at least one selected from the group consisting of graphite, TaC, reaction sintered SiC, atmospheric pressure sintered SiC, hot press SiC, recrystallized SiC and CVD SiC,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  7. 제1항에 있어서,The method of claim 1,
    상기 모재 및 증착층의 두께 비는 1: 1 내지 100:1 인 것인, Thickness ratio of the base material and the deposition layer is 1: 1 to 100: 1,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  8. 모재를 준비하는 단계; Preparing a base material;
    지그로 상기 모재의 적어도 일 면을 지지하는 단계;Supporting at least one surface of the base material with a jig;
    상기 지그로 지지된 상기 모재에 원료 가스를 분사하여 증착층을 형성하는 단계; 및Forming a deposition layer by spraying a source gas on the base material supported by the jig; And
    상기 증착층이 형성된 상기 모재를 가공하는 단계;를 포함하고,Processing the base material on which the deposition layer is formed;
    상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진 것을 포함하는,The jig, at least one side of the cross-section and the surface in contact with the base material is rounded,
    지그를 이용한 반도체 제조용 부품의 제조방법.A method for manufacturing a component for semiconductor manufacturing using a jig.
  9. 챔버; chamber;
    상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐;A source gas injection nozzle installed inside the chamber from the outside;
    상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And
    상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고,And a replaceable jig for supporting a base material connected to one end of the mounting portion.
    상기 지그는, 단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는 것인,The jig is that the cross section is tapered in shape and the width of the cross section increases in a direction approaching the surface of the base material,
    지그를 이용한 반도체 제조용 부품의 제조장치.An apparatus for manufacturing a component for semiconductor manufacturing using a jig.
  10. 제9항에 있어서,The method of claim 9,
    상기 지그와 상기 접촉 부분의 모재가 이루는 각이 둔각을 이루는 것인,The angle between the jig and the base metal of the contact portion forms an obtuse angle,
    지그를 이용한 반도체 제조용 부품의 제조장치.An apparatus for manufacturing a component for semiconductor manufacturing using a jig.
  11. 제9항에 있어서,The method of claim 9,
    상기 지그와 상기 접촉 부분의 상기 모재가 이루는 각은 95 도 내지 170 도인 것인,The angle between the jig and the base metal of the contact portion is 95 degrees to 170 degrees,
    지그를 이용한 반도체 제조용 부품의 제조장치.An apparatus for manufacturing a component for semiconductor manufacturing using a jig.
  12. 챔버; chamber;
    상기 챔버 외부에서 내부로 설치되는 원료 가스 분사 노즐;A source gas injection nozzle installed inside the chamber from the outside;
    상기 챔버의 적어도 일 측에서 상기 챔버 내부 중앙 방향으로 연장 설치되는 탑재부; 및A mounting part extending from the at least one side of the chamber in a central direction in the chamber; And
    상기 탑재부 일 단부에 연결 설치되는 모재를 지지하는 교체 가능한 지그;를 포함하고,And a replaceable jig for supporting a base material connected to one end of the mounting portion.
    상기 지그는, 상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 오목하게 라운드진 것을 포함하는,The jig, at least one side of the cross section and the surface in contact with the base material comprises a concave round,
    지그를 이용한 반도체 제조용 부품의 제조장치.An apparatus for manufacturing a component for semiconductor manufacturing using a jig.
  13. 모재를 지지하고, Support the base material,
    단면이 테이퍼진 형상이고 상기 모재의 표면과 가까워지는 방향으로 단면의 폭이 증가하는,The cross section is tapered in shape and the width of the cross section increases in a direction closer to the surface of the base material,
    반도체 제조용 부품 제조를 위한 지그.Jig for manufacturing parts for semiconductor manufacturing.
  14. 모재를 지지하고, Support the base material,
    상기 모재와 접하는 면과 이어진 단면의 적어도 일 측부가 라운드진,At least one side of the cross section and the surface in contact with the base material is rounded,
    반도체 제조용 부품 제조를 위한 지그.Jig for manufacturing parts for semiconductor manufacturing.
PCT/KR2017/014906 2016-12-20 2017-12-18 Method and apparatus for manufacturing semiconductor manufacturing parts by using jig WO2018117558A1 (en)

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US16/466,271 US11367612B2 (en) 2016-12-20 2017-12-18 Method and apparatus for manufacturing semiconductor manufacturing parts by using jig
CN201780076235.0A CN110073466B (en) 2016-12-20 2017-12-18 Method and apparatus for manufacturing semiconductor manufacturing component using jig
JP2019532782A JP7402046B2 (en) 2016-12-20 2017-12-18 Manufacturing method and device for semiconductor manufacturing parts using a jig

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KR10-2016-0174906 2016-12-20
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KR1020170170790A KR102040378B1 (en) 2016-12-20 2017-12-12 Part fabrication method and apparatus for semiconductor manufactoring using jig

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576058A (en) * 1994-03-18 1996-11-19 Sandvik Ab Batch loading system for CVD
KR20100095285A (en) * 2009-02-20 2010-08-30 주식회사 티씨케이 Manufacturing method for silicon carbide substrate
KR20120102548A (en) * 2011-03-08 2012-09-18 이비덴 가부시키가이샤 Holder for ceramic substrate and method for producing ceramic member
KR20160007559A (en) * 2013-06-06 2016-01-20 이비덴 가부시키가이샤 Wafer carrier and epitaxial growth device using same
JP2016169422A (en) * 2015-03-13 2016-09-23 イビデン株式会社 Manufacturing method of ceramic member

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576058A (en) * 1994-03-18 1996-11-19 Sandvik Ab Batch loading system for CVD
KR20100095285A (en) * 2009-02-20 2010-08-30 주식회사 티씨케이 Manufacturing method for silicon carbide substrate
KR20120102548A (en) * 2011-03-08 2012-09-18 이비덴 가부시키가이샤 Holder for ceramic substrate and method for producing ceramic member
KR20160007559A (en) * 2013-06-06 2016-01-20 이비덴 가부시키가이샤 Wafer carrier and epitaxial growth device using same
JP2016169422A (en) * 2015-03-13 2016-09-23 イビデン株式会社 Manufacturing method of ceramic member

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