WO2018117060A1 - Acoustic wave resonator, filter device, and multiplexer - Google Patents

Acoustic wave resonator, filter device, and multiplexer Download PDF

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Publication number
WO2018117060A1
WO2018117060A1 PCT/JP2017/045402 JP2017045402W WO2018117060A1 WO 2018117060 A1 WO2018117060 A1 WO 2018117060A1 JP 2017045402 W JP2017045402 W JP 2017045402W WO 2018117060 A1 WO2018117060 A1 WO 2018117060A1
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Prior art keywords
reflector
bus bar
comb
electrode
idt electrode
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PCT/JP2017/045402
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French (fr)
Japanese (ja)
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明雄 金田
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株式会社村田製作所
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Publication of WO2018117060A1 publication Critical patent/WO2018117060A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves

Definitions

  • the present invention relates to an elastic wave resonator having an IDT (InterDigital Transducer) electrode and a reflector, and a filter device and a multiplexer including the elastic wave resonator.
  • IDT InterDigital Transducer
  • a filter device having a plurality of acoustic wave resonators has been put into practical use, such as a band-pass filter disposed in a front end portion of a mobile communication device.
  • FIG. 4 of Patent Document 1 includes two IDT electrodes arranged in parallel so as to have the same acoustic wave propagation direction, and an acoustic wave propagation direction.
  • An acoustic wave resonator is disclosed that includes one reflector disposed between two IDT electrodes and a plurality of reflectors disposed outside the two IDT electrodes.
  • one reflector disposed between two IDT electrodes is shared by the two IDT electrodes, thereby downsizing the acoustic wave resonator.
  • each of the plurality of acoustic wave resonators constituting the filter device is required to have a steep resonance characteristic.
  • the elastic wave resonator disclosed in Patent Document 1 may have insufficient resonance characteristics.
  • the present invention has been made to solve the above-described problems, and an object thereof is to improve the steepness of resonance characteristics of an acoustic wave resonator or the like.
  • an acoustic wave resonator is an IDT electrode having a piezoelectric substrate and a pair of comb-like electrodes facing each other, and is provided on the piezoelectric substrate.
  • a first IDT electrode and a second IDT electrode disposed along a predetermined direction; a shared reflector provided on the piezoelectric substrate and disposed between the first IDT electrode and the second IDT electrode in the predetermined direction;
  • a second reflector provided on the opposite side of the shared reflector as viewed from the 2IDT electrode, each of the first IDT electrode and the second IDT electrode extending in the predetermined direction and One comb-tooth bus bar and the other comb-tooth bus bar facing each other in the orthogonal direction of the fixed direction, and each of the first reflector and the second reflector extends in the predetermined direction and mutually in the orthogonal direction
  • the other comb bus bar of the second IDT electrode and the other reflector bus bar of the second reflector are arranged along the predetermined direction and connected to each other. At least one of the states that are being used.
  • one reflector bus bar of the first reflector and one comb bus bar of the first IDT electrode face each other with different potentials, and a capacitance is added to the acoustic wave resonator.
  • one comb-tooth bus bar of the second IDT electrode and one reflector bus bar of the second reflector face each other with different potentials, and a capacitance is added to the acoustic wave resonator.
  • the other reflector bus bar of the first reflector and the other comb bus bar of the first IDT electrode are located between the other reflector bus bar and the other comb bus bar.
  • the other comb-tooth busbar of the second IDT electrode and the other reflector busbar of the second reflector are connected via one connection electrode, the other comb-tooth busbar and the other reflector busbar. And may be connected via a second connection electrode located between the two.
  • the adjacent bus bars can be connected at a short distance. Can do. Therefore, it is possible to reduce the electrical resistance for connecting the other reflector bus bar and the other comb-tooth bus bar, and to increase the capacity formed by one reflector bus bar and one comb-tooth bus bar. it can. Thereby, the steepness of the resonance characteristics in the acoustic wave resonator can be improved.
  • a first input / output wiring is connected to the one comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode, and a second comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode is connected to the first comb-tooth bus bar.
  • Two input / output wirings are connected, and the first IDT electrode and the second IDT electrode may be connected in parallel in a path connecting the first input / output wiring and the second input / output wiring.
  • the elastic wave resonator further faces the one reflector bus bar on the side opposite to the other reflector bus bar when viewed from the one reflector bus bar of the first reflector in the orthogonal direction.
  • a first counter electrode is provided, and the first counter electrode is connected to the ground, and in the orthogonal direction, the other reflector bus bar as viewed from the one reflector bus bar of the second reflector.
  • a second counter electrode facing the one reflector bus bar is provided on the opposite side of the first counter bus bar, and the second counter electrode may have at least one state of being connected to the ground. .
  • the elastic wave resonator further includes a first insulating layer provided on the one reflector bus bar of the first reflector, and a third opposing to the one reflector bus bar on the first insulating layer.
  • a counter electrode is provided, and the third counter electrode is connected to the one comb-shaped bus bar of the first IDT electrode, and a second insulation is provided on the one reflector bus bar of the second reflector.
  • a fourth counter electrode facing the one reflector bus bar is provided on the second insulating layer, and the fourth counter electrode is connected to the one comb-tooth bus bar of the second IDT electrode. It may have at least one of the states.
  • a filter device is a ladder-type filter device including one or more series arm resonators and one or more parallel arm resonators, and the series arm resonators At least one of the parallel arm resonators may include the elastic wave resonator.
  • the steepness in the pass band of the filter device can be improved.
  • a multiplexer may include the above filter device.
  • the steepness in the pass band of the multiplexer can be improved.
  • the steepness of the resonance characteristics of the acoustic wave resonator can be improved.
  • steepness in the pass band of the filter device and the multiplexer can be improved.
  • FIG. 1 is a circuit configuration diagram of a multiplexer and a filter device using the acoustic wave resonator according to the first embodiment.
  • 2A and 2B are diagrams illustrating the acoustic wave resonator according to the first embodiment, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line IIB-IIB shown in FIG.
  • FIG. 3 is an equivalent circuit of the acoustic wave resonator according to the first embodiment.
  • FIG. 4 is a plan view showing an acoustic wave resonator in a comparative example.
  • FIG. 5 is a diagram showing insertion loss of the acoustic wave resonator in the first embodiment and the comparative example.
  • FIG. 6 is a diagram showing the insertion loss of the filter device in the first embodiment and the comparative example.
  • 7A and 7B are diagrams illustrating the frequency characteristics of the multiplexer according to the first embodiment and the comparative example, where FIG. 7A is a diagram illustrating insertion loss and FIG. 7B is a diagram illustrating isolation characteristics.
  • FIG. 8 is a plan view illustrating an acoustic wave resonator according to the second embodiment.
  • FIG. 9 is an equivalent circuit of the acoustic wave resonator according to the second embodiment.
  • 10A and 10B are diagrams illustrating an acoustic wave resonator according to the third embodiment.
  • FIG. 10A is a plan view
  • FIG. 10B is a cross-sectional view taken along line XB-XB shown in FIG.
  • FIG. 11 is an equivalent circuit of the acoustic wave resonator according to the third embodiment.
  • the multiplexer and filter device according to the present embodiment are used for communication devices such as mobile phones.
  • a duplexer of Band 5 transmission pass band: 824 to 849 MHz, reception pass band: 869 to 894 MHz
  • transmission pass band: 824 to 849 MHz reception pass band: 869 to 894 MHz
  • FIG. 1 is a circuit configuration diagram of the multiplexer 1 according to the first embodiment.
  • the multiplexer 1 includes a transmission filter 7 that is one filter device, a reception filter 8 that is the other filter device, an input / output terminal 6a on the antenna side, and an input / output terminal on the transmitter side. 6b and an input / output terminal 6c on the receiver side.
  • the transmission filter 7 and the reception filter 8 are connected to the input / output terminal 6a on the antenna side by bundling respective lead wires.
  • the transmission filter 7 is a band pass filter that filters the transmission wave input from the input / output terminal 6b on the transmitter side in each transmission pass band and outputs it to the input / output terminal 6a on the antenna side.
  • the reception filter 8 is a band pass filter that filters the received wave input from the input / output terminal 6a on the antenna side in each reception pass band and outputs it to the input / output terminal 6c on the receiver side.
  • the transmission filter 7 is a ladder-type filter, and series arm resonators 2a, 2b, 2c, 2d provided on a path connecting the input / output terminal 6a on the antenna side and the input / output terminal 6b on the transmitter side, and Parallel arm resonators 3a, 3b, and 3c are connected between a connection path from the series arm resonator 2a to the series arm resonator 2d and a reference terminal (ground).
  • the reception filter 8 includes a series resonator 4 and a longitudinally coupled acoustic wave filter unit 5 provided on a path connecting the input / output terminal 6a on the antenna side and the input / output terminal 6c on the receiver side.
  • the elastic wave resonator 10 is included in the series arm resonator 2b of the transmission filter 7, for example.
  • the acoustic wave resonator 10 may be included in at least one of the series arm resonators 2 a to 2 d in the transmission filter 7 or in the series resonator 4 in the reception filter 8.
  • the elastic wave resonator 10 may be included in the parallel arm resonators 3 a to 3 d of the transmission filter 7 or may be included in the resonators 5 a and 5 b of the longitudinally coupled elastic wave filter unit 5. .
  • the configuration of the acoustic wave resonator 10 will be described.
  • FIG. 2A and 2B are diagrams illustrating the acoustic wave resonator 10 according to the first embodiment, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line IIB-IIB shown in FIG. FIG. 3 is an equivalent circuit of the acoustic wave resonator 10.
  • the acoustic wave resonator 10 is sometimes referred to as a piezoelectric substrate 90, and a first IDT electrode 11 and a second IDT electrode 22 (hereinafter referred to as IDT electrode 11 and IDT electrode 22) provided on the piezoelectric substrate 90.
  • the piezoelectric substrate 90 is made of, for example, LiTaO 3 piezoelectric single crystal, LiNbO 3 piezoelectric single crystal, or piezoelectric ceramic having a predetermined cut angle.
  • the cross-sectional structures of the IDT electrodes 11 and 22, the shared reflector 30, the first reflector 31, and the second reflector 32 will be described.
  • the IDT electrodes 11 and 22 have a laminated structure of an adhesion layer 91 and a main electrode layer 92 provided on the adhesion layer 91.
  • the first reflector 31, the shared reflector 30, and the second reflector 32 have a laminated structure of the adhesion layer 91 and the main electrode layer 92, similarly to the IDT electrodes 11 and 22.
  • the adhesion layer 91 is a layer for improving the adhesion between the piezoelectric substrate 90 and the main electrode layer 92, and, for example, Ti is used as a material.
  • the film thickness of the adhesion layer 91 is, for example, 12 nm.
  • the main electrode layer 92 is made of, for example, Al containing 1% Cu.
  • the film thickness of the main electrode layer 92 is, for example, 162 nm.
  • the protective layer 93 is formed so as to cover the IDT electrodes 11 and 22.
  • the protective layer 93 is a layer for the purpose of protecting the main electrode layer 92 from the external environment, adjusting frequency temperature characteristics, and improving moisture resistance, for example, a film containing silicon dioxide as a main component. .
  • a first input / output wiring 41, a second input / output wiring 42, a first connection electrode 51, and a second connection electrode 52 are provided on the piezoelectric substrate 90.
  • the IDT electrodes 11 and 22 are arranged along a predetermined direction D1.
  • the IDT electrode 11 is composed of a pair of comb-like electrodes 11a and 11b facing each other.
  • the IDT electrode 22 is composed of a pair of comb-like electrodes 22a and 22b facing each other.
  • the predetermined direction D1 in the present embodiment is the same direction as the elastic wave propagation direction.
  • the predetermined direction D1 is not limited to the same direction as the elastic wave propagation direction, and may be a direction slightly inclined with respect to the elastic wave propagation direction.
  • the plus side of the orthogonal direction D2 orthogonal to the predetermined direction D1 is referred to as one and the minus side of the orthogonal direction D2 is referred to as the other.
  • One comb-shaped electrode 11a of the IDT electrode 11 includes one comb-shaped bus bar 15a extending in a predetermined direction D1, a cross electrode finger 16 and an offset electrode connected to the comb-shaped bus bar 15a and extending in the orthogonal direction D2 (minus side). And a finger 17.
  • the other comb-shaped electrode 11b of the IDT electrode 11 includes the other comb-shaped bus bar 15b extending in the predetermined direction D1, the cross electrode finger 16 connected to the comb-shaped bus bar 15b and extending in the orthogonal direction D2 (plus side) and the offset electrode. And a finger 17.
  • One comb-shaped electrode 22a of the IDT electrode 22 includes one comb-shaped bus bar 25a extending in a predetermined direction D1, a cross electrode finger 26 connected to the comb-shaped bus bar 25a and extending in the orthogonal direction D2 (minus side), and an offset electrode.
  • the other comb-shaped electrode 22b of the IDT electrode 22 includes the other comb-shaped bus bar 25b extending in a predetermined direction D1, a cross electrode finger 26 connected to the comb-shaped bus bar 25b and extending in the orthogonal direction D2 (plus side), and an offset electrode. Finger 27.
  • the cross electrode fingers 16 and 26 cross each other as seen from the predetermined direction D1.
  • the offset electrode finger 17 is shorter than the cross electrode fingers 16 and 26 and is disposed to face the cross electrode finger 16 in the orthogonal direction D2.
  • the offset electrode finger 27 is shorter than the cross electrode fingers 16 and 26 and is disposed to face the cross electrode finger 26 in the orthogonal direction D2.
  • the wavelength of the acoustic wave resonator 10 is defined by the repetition pitch ⁇ of the cross electrode fingers 16 and 26 in the predetermined direction D1.
  • the first input / output wiring 41 is connected to one comb-tooth bus bar 15 a of the IDT electrode 11 and one comb-tooth bus bar 25 a of the IDT electrode 22, and the other comb-tooth bus bar 15 b of the IDT electrode 11 and the other of the IDT electrode 22 are connected.
  • a second input / output wiring 42 is connected to the comb-tooth bus bar 25b. That is, the IDT electrode 11 and the IDT electrode 22 are connected in parallel in a path connecting the first input / output wiring 41 and the second input / output wiring 42.
  • the common reflector 30 is disposed between the IDT electrode 11 and the IDT electrode 22 in the predetermined direction 1.
  • the shared reflector 30 is one reflector that is commonly used by the IDT electrodes 11 and 22.
  • the shared reflector 30 has one reflector bus bar 30a, the other reflector bus bar 30b, and a plurality of reflective electrode fingers 30c.
  • Each of the reflector bus bars 30a and 30b is disposed so as to extend in a predetermined direction D1 and to face each other in the orthogonal direction D2.
  • Each of the plurality of reflective electrode fingers 30c is connected to each of the reflector bus bars 30a and 30b and arranged to extend in the orthogonal direction D2.
  • the plurality of reflective electrode fingers 30c are arranged to be parallel to each other at a predetermined interval in the predetermined direction D1.
  • the first reflector 31 is provided on the side opposite to the shared reflector 30 when viewed from the IDT electrode 11 in the predetermined direction D1.
  • the first reflector 31 has one reflector bus bar 31a, the other reflector bus bar 31b, and a plurality of reflective electrode fingers 31c.
  • Each of the reflector bus bars 31a and 31b extends in the predetermined direction D1 and is disposed so as to face each other in the orthogonal direction D2.
  • Each of the plurality of reflective electrode fingers 31c is connected to the reflector bus bars 31a and 31b and arranged to extend in the orthogonal direction D2.
  • the plurality of reflective electrode fingers 31c are arranged in parallel to each other at a predetermined interval in the predetermined direction D1.
  • the second reflector 32 is provided on the side opposite to the shared reflector 30 when viewed from the IDT electrode 22 in the predetermined direction D1.
  • the second reflector 32 has one reflector bus bar 32a, the other reflector bus bar 32b, and a plurality of reflective electrode fingers 32c.
  • Each of the reflector bus bars 32a and 32b extends in the predetermined direction D1, and is disposed so as to face each other in the orthogonal direction D2.
  • Each of the plurality of reflective electrode fingers 32c is connected to the reflector bus bars 32a and 32b and arranged to extend in the orthogonal direction D2.
  • the plurality of reflective electrode fingers 32c are arranged to be parallel to each other with a predetermined interval in the predetermined direction D1.
  • the other reflector bus bar 31b and the other comb bus bar 15b are arranged and connected along a predetermined direction D1.
  • the other comb-tooth bus bar 25b and the other reflector bus bar 32b are arranged and connected along a predetermined direction D1.
  • a first connection electrode 51 is provided between the other reflector bus bar 31b and the other comb bus bar 15b, and the first connection electrode 51 is connected to the other reflector bus bar 31b and the other comb bus bar. 15b.
  • a second connection electrode 52 is provided between the other comb-tooth bus bar 25b and the other reflector bus bar 32b, and the second connection electrode 52 connects the other comb-tooth bus bar 25b and the other reflector bus bar 32b. Connected.
  • the width of the connection electrode 51 is the same as the width of the reflector bus bar 31b and the comb-shaped bus bar 15b, and the thickness of the connection electrode 51 is the same as the thickness of the reflector bus bar 31b and the comb-shaped bus bar 15b. That is, the reflector bus bar 31b, the connection electrode 51, and the comb-shaped bus bar 15b are integrally formed linearly along the predetermined direction D1.
  • the width of the connection electrode 52 is the same as the width of the comb-tooth bus bar 25b and the reflector bus bar 32b, and the thickness of the connection electrode 52 is the same as the thickness of the comb-tooth bus bar 25b and the reflector bus bar 32b.
  • connection electrodes 51 and 52 are formed by the same process (for example, lift-off method) as the comb-tooth bus bars 15b and 25b and the reflector bus bars 31b and 32b, and have the same laminated structure.
  • the acoustic wave resonator 10 has capacitors C1 and C2 corresponding to the respective acoustic wave elements F1 and F2 configured by the IDT electrodes 11 and 22 (see FIG. 3).
  • the capacitor C1 is configured such that one reflector bus bar 31a and one comb tooth bus bar 15a located on the opposite sides of the reflector bus bar 31b and the comb tooth bus bar 15b connected by the connection electrode 51 have different potentials. Formed by facing each other.
  • the capacitor C2 is configured such that one comb-tooth bus bar 25a and one reflector bus bar 32a, which are located on the opposite sides of the comb-tooth bus bar 25b and the reflector bus bar 32b connected by the connection electrode 51, face each other with different potentials. It is formed.
  • the acoustic wave resonator 10 includes the capacitors C1 and C2, the steepness of the resonance characteristics in the acoustic wave resonator 10 can be improved.
  • FIG. 4 is a plan view showing an acoustic wave resonator 510 in a comparative example.
  • the acoustic wave resonator 510 of the comparative example is different from the first embodiment in that the first connection electrode 51 and the second connection electrode 52 are not provided.
  • the acoustic wave resonator 510 since the other reflector bus bar 30b and the other comb-tooth bus bar 15b are not connected, a structure in which capacitance is hardly generated between the one reflector bus bar 31a and the one comb-tooth bus bar 15a. It has become.
  • the other comb-tooth bus bar 25b and the other reflector bus bar 32b are not connected to each other, it is difficult to generate a capacity between the one comb-tooth bus bar 25a and the one reflector bus bar 32a. .
  • FIG. 5 is a diagram showing the insertion loss of the acoustic wave resonator in the first embodiment and the comparative example.
  • the increase value of the insertion loss of the acoustic wave resonator 510 of the comparative example is 5.57 dB
  • the elasticity of the first embodiment is The increase value of the insertion loss of the wave resonator 10 is 5.84 dB, which is higher than the comparative example.
  • FIG. 6 is a diagram showing the insertion loss of the filter device in the first embodiment and the comparative example.
  • the series arm resonator 2b shown in FIG. 1 includes the elastic wave resonator 10 of the present embodiment.
  • the series arm resonator 2b shown in FIG. 1 includes the elastic wave resonator 510 (see FIG. 4) of the comparative example.
  • the increase value of the insertion loss in the pass band of the filter device of the comparative example is 27.37 dB with respect to the change from the frequency 856 MHz to 865 MHz, whereas the filter of the first embodiment
  • the increase value of the insertion loss in the pass band of the device is 29.18 dB, which is higher than the comparative example.
  • FIG. 7 is a diagram showing the frequency characteristics of the multiplexers in the first embodiment and the comparative example, where (a) is an insertion loss and (b) is a diagram showing isolation characteristics.
  • the isolation characteristic was obtained by measuring the insertion loss between Tx and Rx in the multiplexer shown in FIG.
  • the increase value of the insertion loss in the transmission passband of the multiplexer of the comparative example is 27.64 dB.
  • the increase value of the insertion loss in the transmission passband of the multiplexer 1 of the first embodiment is 29.48 dB, which is higher than the comparative example.
  • the first embodiment has a frequency difference ⁇ f of 0.3 MHz between the frequency where the Tx loss is 2 dB and the frequency where the Rx band Iso is 50 dB as compared with the comparative example. Improved (becomes smaller) and improved isolation.
  • the acoustic wave resonator 10 includes a piezoelectric substrate 90, an IDT electrode 11 having a pair of comb-like electrodes 11a and 11b facing each other, and an IDT having a pair of comb-like electrodes 22a and 22b.
  • the electrode 22 is provided on the piezoelectric substrate 90 and disposed along the predetermined direction D1, and the IDT electrode 11 and the IDT electrode 22 are provided on the piezoelectric substrate 90, and the IDT electrode 11 and the IDT electrode in the predetermined direction D1.
  • the IDT electrode 11 has one comb-tooth bus bar 15a and the other comb-tooth bus bar 15b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2.
  • the IDT electrode 22 has one comb-tooth bus bar 25a and the other comb-tooth bus bar 25b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2.
  • the first reflector 31 has one reflector bus bar 31a and the other reflector bus bar 31b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2.
  • the second reflector 32 has one reflector bus bar 32a and the other reflector bus bar 32b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2.
  • the other reflector bus bar 31b of the first reflector 31 and the other comb bus bar 15b of the IDT electrode 11 are arranged along the predetermined direction D1 and connected to each other.
  • the other comb-tooth bus bar 25b of the IDT electrode 22 and the other reflector bus bar 32b of the second reflector 32 are arranged along the predetermined direction D1 and connected to each other.
  • one reflector bus bar 31a and one comb bus bar 15a which are located on opposite sides of the reflector bus bar 31b and the comb bus bar 15b connected to each other, face each other with different potentials. Therefore, a capacitance is added to the acoustic wave resonator 10.
  • the acoustic wave resonator 10 Capacity is added to In this way, by adding the capacitance to the acoustic wave resonator 10, the steepness of the resonance characteristics in the acoustic wave resonator 10 can be improved.
  • At least one of the state where the reflector bus bar 31b and the comb bus bar 15b are connected and the state where the comb bus bar 25b and the reflector bus bar 32b are connected is used. If it has, it has the said effect.
  • FIG. 8 is a plan view showing an acoustic wave resonator 10A according to the second embodiment.
  • FIG. 9 is an equivalent circuit of the acoustic wave resonator 10A.
  • This elastic wave resonator 10A is further provided with a first counter electrode 61 and a second counter electrode 62 in addition to the elastic wave resonator 10 of the first embodiment.
  • the first counter electrode 61 is provided on the opposite side to the other reflector bus bar 31b when viewed from one reflector bus bar 31a of the first reflector 31 in the orthogonal direction D2, and is connected to the ground. Yes.
  • the first counter electrode 61 faces the reflector bus bar 31a by being arranged in parallel with a predetermined distance from the reflector bus bar 31a.
  • the second counter electrode 62 is provided on the opposite side of the second reflector 32 from the other reflector bus bar 32b when viewed from the one reflector bus bar 32a in the orthogonal direction D2, and is connected to the ground.
  • the second counter electrode 62 is opposed to the reflector bus bar 32a by being arranged parallel to the reflector bus bar 32a at a predetermined distance.
  • the same material as that of the protective layer 93 (for example, silicon dioxide) is filled between the reflector bus bar 31a and the first counter electrode 61 and between the reflector bus bar 32a and the second counter electrode 62. ing.
  • the acoustic wave resonator 10A has capacitors C3 and C4 as shown in FIG.
  • the capacitor C3 is formed by one reflector bus bar 31a and the one comb-tooth bus bar 15a facing each other with different potentials, and one reflector bus bar 31a and the first counter electrode 61 facing each other with different potentials.
  • one comb-tooth bus bar 25a and one reflector bus bar 32a face each other with different potentials
  • one reflector bus bar 32a and the second counter electrode 62 face each other with different potentials. It is formed with.
  • the acoustic wave resonator 10A has the capacitors C3 and C4, the steepness of the resonance characteristics of the acoustic wave resonator 10A can be improved.
  • At least one of the state where the reflector bus bar 31a and the first counter electrode 61 face each other and the state where the reflector bus bar 32a and the second counter electrode 62 face each other is set. If it has, it has the said effect.
  • FIG. 10A and 10B are diagrams illustrating an acoustic wave resonator 10B according to the third embodiment, in which FIG. 10A is a plan view and FIG. 10B is a plan view that is a cross-sectional view taken along line XB-XB shown in FIG. is there.
  • FIG. 11 is an equivalent circuit of the acoustic wave resonator 10B.
  • illustration of the adhesion layer 91, the main electrode layer 92, and the protective layer 93 is omitted.
  • This elastic wave resonator 10B further includes a third counter electrode 63 and a fourth counter electrode 64 in addition to the elastic wave resonator 10 of the first embodiment.
  • a first insulating layer 66 is provided on one reflector bus bar 31a of the first reflector 31, and a first opposing bus bar 31a in the thickness direction is provided on the first insulating layer 66.
  • Three counter electrodes 63 are provided.
  • the third counter electrode 63 is formed along the predetermined direction D1, and the positive end of the third counter electrode 63 in the predetermined direction D1 is connected to one comb-tooth bus bar 15a.
  • a second insulating layer 67 is provided on one reflector bus bar 32a of the second reflector 32, and a fourth counter electrode facing the one reflector bus bar 32a in the thickness direction is provided on the second insulating layer 67. 64 is provided.
  • the fourth counter electrode 64 is formed along the predetermined direction D1, and the negative end of the fourth counter electrode 64 in the predetermined direction D1 is connected to one comb-shaped bus bar 25a.
  • the material of the first insulating layer 66 and the second insulating layer 67 is appropriately selected from, for example, silicon dioxide and polyimide.
  • the acoustic wave resonator 10B has capacitors C5 and C6 as shown in FIG.
  • the capacitor C5 is formed by facing one reflector bus bar 31a and one comb-tooth bus bar 15a with different potentials, and facing one reflector bus bar 31a and the third counter electrode 63 with different potentials.
  • one comb bus bar 25a and one reflector bus bar 32a face each other with different potentials
  • one reflector bus bar 32a and the fourth counter electrode 64 face each other with different potentials. It is formed with.
  • the acoustic wave resonator 10B includes the capacitors C5 and C6, the steepness of the resonance characteristics of the acoustic wave resonator 10B can be improved.
  • At least one of the state where the reflector bus bar 31a and the third counter electrode 63 face each other and the state where the reflector bus bar 32a and the fourth counter electrode 64 face each other is set. If it has, it has the said effect.
  • the acoustic wave resonators 10 to 10B are not limited to surface acoustic wave resonators, and may be boundary acoustic wave resonators.
  • the offset electrode fingers 17 and 27 are provided on the comb-shaped electrodes 11a, 11b, 22a, and 22b, thereby suppressing spurious and the like that are unnecessary frequency components caused by harmonics and the like. is doing.
  • the electrode fingers of the comb-shaped electrodes 11a, 11b, 22a, and 22b are not limited thereto, and may include the cross electrode fingers 16 and 26 without the offset electrode fingers 17 and 27.
  • the reflector bus bars 31a and 32a may be formed to be wider and thicker than the reflective electrode fingers 31c and 32c.
  • One comb-tooth bus bar 15a, 25a may be formed to be wider and thicker than the cross electrode fingers 16, 26 and the offset electrode fingers 17, 27.
  • the materials constituting the adhesion layer 91, the main electrode layer 92, and the protective layer 93 of the acoustic wave resonator 10 are not limited to the materials described above.
  • the IDT electrodes 11 and 22 do not have to have the above laminated structure.
  • the IDT electrodes 11 and 22 may be made of, for example, a metal or an alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd. It may be configured.
  • the protective layer 93 may not be formed.
  • the piezoelectric substrate 90 of the acoustic wave resonator 10 may have a laminated structure in which a high sound velocity supporting substrate, a low sound velocity film, and a piezoelectric film are laminated in this order.
  • the piezoelectric film may be, for example, a 50 ° Y-cut X-propagating LiTaO 3 piezoelectric single crystal or a piezoelectric ceramic (a lithium tantalate single crystal cut along a plane whose axis is rotated by 50 ° from the Y axis with the X axis as the central axis, Alternatively, it is made of ceramic and is made of a single crystal or ceramic in which surface acoustic waves propagate in the X-axis direction.
  • the piezoelectric film has a thickness of 600 nm, for example.
  • the high sound velocity support substrate is a substrate that supports the low sound velocity film, the piezoelectric film, and the IDT electrode.
  • the high-sonic support substrate is a substrate in which the acoustic velocity of the bulk wave in the high-sonic support substrate is higher than that of the surface wave or boundary wave that propagates through the piezoelectric film. It functions in such a way that it is confined in the portion where the sonic film is laminated and does not leak below the high sonic support substrate.
  • the high sound speed support substrate is, for example, a silicon substrate and has a thickness of, for example, 200 ⁇ m.
  • the low acoustic velocity film is a membrane in which the acoustic velocity of the bulk wave in the low acoustic velocity film is lower than the bulk wave propagating through the piezoelectric membrane, and is disposed between the piezoelectric membrane and the high acoustic velocity support substrate. Due to this structure and the property that energy is concentrated in a medium where acoustic waves are essentially low in sound velocity, leakage of surface acoustic wave energy to the outside of the IDT electrode is suppressed.
  • the low acoustic velocity film is, for example, a film mainly composed of silicon dioxide and has a thickness of, for example, 670 nm.
  • the Q value at the resonance frequency and the anti-resonance frequency can be significantly increased as compared with a structure in which the piezoelectric substrate 90 is used as a single layer. That is, since a surface acoustic wave resonator having a high Q value can be configured, a filter with a small insertion loss can be configured using the surface acoustic wave resonator.
  • the predetermined direction D1 is the same direction as the elastic wave propagation direction.
  • the present invention is not limited thereto, and the predetermined direction D1 is a direction slightly inclined with respect to the elastic wave propagation direction.
  • each of the comb-tooth bus bars 15a, 15b, 25a, 25b and the reflector bus bars 30a, 30b, 31a, 31b, 32a, 32b in the first embodiment is 0 ° or more and 10 ° or less with respect to the elastic wave propagation direction. It may be formed extending in an inclined direction.
  • each of the crossed electrode fingers 16, 26, the offset electrode fingers 17, 27, and the reflective electrode fingers 30c, 31c, 32c may be formed so as to extend in a direction orthogonal to the elastic wave propagation direction.
  • the wavelength of the acoustic wave resonator 10 may be defined by the repetition pitch ⁇ of each of the cross electrode fingers 16 and 26 in the acoustic wave propagation direction.
  • the present invention can be widely used in mobile communication devices such as mobile phones as acoustic wave resonators, filter devices, duplexers, and multiplexers with improved resonance characteristics.

Abstract

An acoustic wave resonator (10) that comprises: IDT electrodes (11, 22) that are arranged along a prescribed direction (D1); a shared reflector (30) that is arranged between the IDT electrodes (11, 22); a first reflector (31) that, seen from IDT electrode (11), is provided on the opposite side from the shared reflector (30); and a second reflector (32) that, seen from IDT electrode (22), is provided on the opposite side from the shared reflector (30). IDT electrode (11) has comb busbars (15a, 15b), and IDT electrode (22) has comb busbars (25a, 25b). The first reflector (31) has reflector busbars (31a, 31b), and the second reflector (32) has reflector busbars (32a, 32b). Reflector busbar (31b) and comb busbar (15b) are arranged along the prescribed direction (D1) and connected to each other, and comb busbar (25b) and reflector busbar (32b) are arranged along the prescribed direction (D1) and connected to each other.

Description

弾性波共振器、フィルタ装置およびマルチプレクサElastic wave resonator, filter device, and multiplexer
　本発明は、ＩＤＴ（ＩｎｔｅｒＤｉｇｉｔａｌ　Ｔｒａｎｓｄｕｃｅｒ）電極と反射器とを有する弾性波共振器、および、この弾性波共振器を備えるフィルタ装置およびマルチプレクサに関する。 The present invention relates to an elastic wave resonator having an IDT (InterDigital Transducer) electrode and a reflector, and a filter device and a multiplexer including the elastic wave resonator.
　従来、移動体通信機のフロントエンド部に配置される帯域通過フィルタなどに、複数の弾性波共振器を有するフィルタ装置が実用化されている。 Conventionally, a filter device having a plurality of acoustic wave resonators has been put into practical use, such as a band-pass filter disposed in a front end portion of a mobile communication device.
　この種の弾性波共振器の一例として、特許文献１の図４には、弾性波伝搬方向が互いに同じとなるように配置されて並列接続された２つのＩＤＴ電極と、弾性波伝搬方向において、２つのＩＤＴ電極の間に配置された１つの反射器と、２つのＩＤＴ電極よりも外側に配置された複数の反射器とを備える弾性波共振器が開示されている。 As an example of this type of acoustic wave resonator, FIG. 4 of Patent Document 1 includes two IDT electrodes arranged in parallel so as to have the same acoustic wave propagation direction, and an acoustic wave propagation direction. An acoustic wave resonator is disclosed that includes one reflector disposed between two IDT electrodes and a plurality of reflectors disposed outside the two IDT electrodes.
　この弾性波共振器では、２つのＩＤＴ電極の間に配置された１つの反射器を、２つのＩＤＴ電極にて共用することで、弾性波共振器を小型化している。 In this acoustic wave resonator, one reflector disposed between two IDT electrodes is shared by the two IDT electrodes, thereby downsizing the acoustic wave resonator.
特開２０１１－１３９５１３号公報JP 2011-139513 A
　近年における移動体通信機のマルチバンド化に対応するため、フィルタ装置を構成する複数の弾性波共振器のそれぞれに、共振特性の急峻性が求められている。しかしながら、特許文献１に開示された弾性波共振器では、共振特性の急峻性が不十分な場合がある。 In order to cope with the recent multi-band mobile communication devices, each of the plurality of acoustic wave resonators constituting the filter device is required to have a steep resonance characteristic. However, the elastic wave resonator disclosed in Patent Document 1 may have insufficient resonance characteristics.
　そこで、本発明は、上記課題を解決するためになされたものであって、弾性波共振器等の共振特性の急峻性を向上することを目的とする。 Therefore, the present invention has been made to solve the above-described problems, and an object thereof is to improve the steepness of resonance characteristics of an acoustic wave resonator or the like.
　上記目的を達成するために、本発明の一態様に係る弾性波共振器は、圧電基板と、互いに対向する一対の櫛歯状電極を有するＩＤＴ電極であって、前記圧電基板上に設けられ、所定方向に沿って配置された第１ＩＤＴ電極および第２ＩＤＴ電極と、前記圧電基板上に設けられ、前記所定方向において前記第１ＩＤＴ電極と前記第２ＩＤＴ電極との間に配置された共用反射器と、前記圧電基板上に設けられ、前記所定方向において前記第１ＩＤＴ電極から見て前記共用反射器と反対側に設けられた第１反射器と、前記圧電基板上に設けられ、前記所定方向において前記第２ＩＤＴ電極から見て前記共用反射器と反対側に設けられた第２反射器とを備え、前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれは、前記所定方向に延びて前記所定方向の直交方向に互いに対向する一方の櫛歯バスバーおよび他方の櫛歯バスバーを有し、前記第１反射器および前記第２反射器のそれぞれは、前記所定方向に延びて前記直交方向に互いに対向する一方の反射器バスバーおよび他方の反射器バスバーを有し、前記第１反射器の前記他方の反射器バスバーと、前記第１ＩＤＴ電極の前記他方の櫛歯バスバーとが前記所定方向に沿って配置され、互いに接続されている状態、および、前記第２ＩＤＴ電極の前記他方の櫛歯バスバーと、前記第２反射器の前記他方の反射器バスバーとが前記所定方向に沿って配置され、互いに接続されている状態のうちの少なくとも一方の状態を有する。 To achieve the above object, an acoustic wave resonator according to an aspect of the present invention is an IDT electrode having a piezoelectric substrate and a pair of comb-like electrodes facing each other, and is provided on the piezoelectric substrate. A first IDT electrode and a second IDT electrode disposed along a predetermined direction; a shared reflector provided on the piezoelectric substrate and disposed between the first IDT electrode and the second IDT electrode in the predetermined direction; A first reflector provided on the piezoelectric substrate, provided on the opposite side of the shared reflector as viewed from the first IDT electrode in the predetermined direction; and provided on the piezoelectric substrate, and in the predetermined direction, the first reflector. A second reflector provided on the opposite side of the shared reflector as viewed from the 2IDT electrode, each of the first IDT electrode and the second IDT electrode extending in the predetermined direction and One comb-tooth bus bar and the other comb-tooth bus bar facing each other in the orthogonal direction of the fixed direction, and each of the first reflector and the second reflector extends in the predetermined direction and mutually in the orthogonal direction One reflector bus bar and the other reflector bus bar facing each other, the other reflector bus bar of the first reflector and the other comb-shaped bus bar of the first IDT electrode along the predetermined direction The other comb bus bar of the second IDT electrode and the other reflector bus bar of the second reflector are arranged along the predetermined direction and connected to each other. At least one of the states that are being used.
　これによれば、第１反射器の一方の反射器バスバーと第１ＩＤＴ電極の一方の櫛歯バスバーとが、異なる電位をもって対向し、弾性波共振器に容量が付加される。または、第２ＩＤＴ電極の一方の櫛歯バスバーと第２反射器の一方の反射器バスバーとが、異なる電位をもって対向し、弾性波共振器に容量が付加される。このように、弾性波共振器に容量が付加されることで、弾性波共振器における共振特性の急峻性を向上することができる。 According to this, one reflector bus bar of the first reflector and one comb bus bar of the first IDT electrode face each other with different potentials, and a capacitance is added to the acoustic wave resonator. Alternatively, one comb-tooth bus bar of the second IDT electrode and one reflector bus bar of the second reflector face each other with different potentials, and a capacitance is added to the acoustic wave resonator. Thus, by adding a capacitance to the acoustic wave resonator, the steepness of the resonance characteristics in the acoustic wave resonator can be improved.
　また、前記第１反射器の前記他方の反射器バスバーと、前記第１ＩＤＴ電極の前記他方の櫛歯バスバーとは、当該他方の反射器バスバーと当該他方の櫛歯バスバーとの間に位置する第１接続電極を介して接続され、前記第２ＩＤＴ電極の前記他方の櫛歯バスバーと、前記第２反射器の前記他方の反射器バスバーとは、当該他方の櫛歯バスバーと当該他方の反射器バスバーとの間に位置する第２接続電極を介して接続されていてもよい。 The other reflector bus bar of the first reflector and the other comb bus bar of the first IDT electrode are located between the other reflector bus bar and the other comb bus bar. The other comb-tooth busbar of the second IDT electrode and the other reflector busbar of the second reflector are connected via one connection electrode, the other comb-tooth busbar and the other reflector busbar. And may be connected via a second connection electrode located between the two.
　このように、第１接続電極および第２接続電極のそれぞれを介して、上記に示す他方の反射器バスバーと他方の櫛歯バスバーとを接続することで、隣り合うバスバーを短い距離で接続することができる。そのため、他方の反射器バスバーと他方の櫛歯バスバーとを接続するための電気抵抗を小さくすることができ、一方の反射器バスバーと一方の櫛歯バスバーとによって形成される容量を大きくすることができる。これにより、弾性波共振器における共振特性の急峻性を向上することができる。 In this way, by connecting the other reflector bus bar shown above and the other comb-tooth bus bar through the first connection electrode and the second connection electrode, the adjacent bus bars can be connected at a short distance. Can do. Therefore, it is possible to reduce the electrical resistance for connecting the other reflector bus bar and the other comb-tooth bus bar, and to increase the capacity formed by one reflector bus bar and one comb-tooth bus bar. it can. Thereby, the steepness of the resonance characteristics in the acoustic wave resonator can be improved.
　また、前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれの前記一方の櫛歯バスバーに第１入出力配線が接続され、前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれの前記他方の櫛歯バスバーに第２入出力配線が接続され、前記第１入出力配線と前記第２入出力配線とを結ぶ経路において、前記第１ＩＤＴ電極と前記第２ＩＤＴ電極とは並列接続されていてもよい。 A first input / output wiring is connected to the one comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode, and a second comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode is connected to the first comb-tooth bus bar. Two input / output wirings are connected, and the first IDT electrode and the second IDT electrode may be connected in parallel in a path connecting the first input / output wiring and the second input / output wiring.
　これによれば、第１入出力配線と第２入出力配線とを結ぶ経路において、第１ＩＤＴ電極と第２ＩＤＴ電極とを並列接続しつつ、弾性波共振器に容量を付加することができる。これにより、弾性波共振器における共振特性の急峻性を向上することができる。 According to this, it is possible to add capacitance to the acoustic wave resonator while connecting the first IDT electrode and the second IDT electrode in parallel in the path connecting the first input / output wiring and the second input / output wiring. Thereby, the steepness of the resonance characteristics in the acoustic wave resonator can be improved.
　また、弾性波共振器は、さらに、前記直交方向において、前記第１反射器の前記一方の反射器バスバーから見て前記他方の反射器バスバーと反対側に、当該一方の反射器バスバーと対向する第１対向電極が設けられ、前記第１対向電極はグランドに接続されている状態、および、前記直交方向において、前記第２反射器の前記一方の反射器バスバーから見て前記他方の反射器バスバーと反対側に、当該一方の反射器バスバーと対向する第２対向電極が設けられ、前記第２対向電極は、グランドに接続されている状態のうちの少なくとも一方の状態を有していてもよい。 The elastic wave resonator further faces the one reflector bus bar on the side opposite to the other reflector bus bar when viewed from the one reflector bus bar of the first reflector in the orthogonal direction. A first counter electrode is provided, and the first counter electrode is connected to the ground, and in the orthogonal direction, the other reflector bus bar as viewed from the one reflector bus bar of the second reflector. A second counter electrode facing the one reflector bus bar is provided on the opposite side of the first counter bus bar, and the second counter electrode may have at least one state of being connected to the ground. .
　これによれば、第１反射器の一方の反射器バスバーと第１対向電極とが、異なる電位をもって対向するので、弾性波共振器に容量が付加される。または、第２反射器の一方の反射器バスバーと第２対向電極とが、異なる電位をもって対向するので、弾性波共振器に容量が付加される。これにより、弾性波共振器における共振特性の急峻性を向上することができる。 According to this, since one reflector bus bar of the first reflector and the first counter electrode face each other with different potentials, a capacitance is added to the acoustic wave resonator. Alternatively, since one reflector bus bar of the second reflector and the second counter electrode face each other with different potentials, a capacitance is added to the acoustic wave resonator. Thereby, the steepness of the resonance characteristics in the acoustic wave resonator can be improved.
　また、弾性波共振器は、さらに、前記第１反射器の前記一方の反射器バスバー上に第１絶縁層が設けられ、前記第１絶縁層上に当該一方の反射器バスバーと対向する第３対向電極が設けられ、前記第３対向電極は、前記第１ＩＤＴ電極の前記一方の櫛歯バスバーに接続されている状態、および、前記第２反射器の前記一方の反射器バスバー上に第２絶縁層が設けられ、前記第２絶縁層上に当該一方の反射器バスバーと対向する第４対向電極が設けられ、前記第４対向電極は、前記第２ＩＤＴ電極の前記一方の櫛歯バスバーに接続されている状態のうちの少なくとも一方の状態を有していてもよい。 The elastic wave resonator further includes a first insulating layer provided on the one reflector bus bar of the first reflector, and a third opposing to the one reflector bus bar on the first insulating layer. A counter electrode is provided, and the third counter electrode is connected to the one comb-shaped bus bar of the first IDT electrode, and a second insulation is provided on the one reflector bus bar of the second reflector. And a fourth counter electrode facing the one reflector bus bar is provided on the second insulating layer, and the fourth counter electrode is connected to the one comb-tooth bus bar of the second IDT electrode. It may have at least one of the states.
　これによれば、第１反射器の一方の反射器バスバーと第３対向電極とが、異なる電位をもって対向するので、弾性波共振器に容量が付加される。または、第２反射器の一方の反射器バスバーと第４対向電極とが、異なる電位をもって対向するので、弾性波共振器に容量が付加される。これにより、弾性波共振器の通過帯域における急峻性を向上することができる。 According to this, since one reflector bus bar of the first reflector and the third counter electrode face each other with different potentials, capacitance is added to the acoustic wave resonator. Alternatively, since one reflector bus bar of the second reflector and the fourth counter electrode face each other with different potentials, capacitance is added to the acoustic wave resonator. Thereby, the steepness in the pass band of the acoustic wave resonator can be improved.
　また、本発明の一態様に係るフィルタ装置は、１または複数の直列腕共振子、および、１または複数の並列腕共振子によって構成されるラダー型のフィルタ装置であって、前記直列腕共振子および前記並列腕共振子の少なくとも１つは、上記弾性波共振器を含んでいてもよい。 A filter device according to an aspect of the present invention is a ladder-type filter device including one or more series arm resonators and one or more parallel arm resonators, and the series arm resonators At least one of the parallel arm resonators may include the elastic wave resonator.
　このように、共振特性の急峻性が向上した弾性波共振器でフィルタ装置を構成することで、フィルタ装置の通過帯域における急峻性を向上することができる。 Thus, by configuring the filter device with an acoustic wave resonator having improved resonance characteristics, the steepness in the pass band of the filter device can be improved.
　また、本発明の一態様に係るマルチプレクサは、上記フィルタ装置を含んでいてもよい。 Further, a multiplexer according to one embodiment of the present invention may include the above filter device.
　これによれば、マルチプレクサの通過帯域における急峻性を向上することができる。 According to this, the steepness in the pass band of the multiplexer can be improved.
　本発明によれば、弾性波共振器の共振特性の急峻性を向上することができる。また、フィルタ装置およびマルチプレクサの通過帯域における急峻性を向上することができる。 According to the present invention, the steepness of the resonance characteristics of the acoustic wave resonator can be improved. In addition, steepness in the pass band of the filter device and the multiplexer can be improved.
図１は、実施の形態１に係る弾性波共振器を用いたマルチプレクサおよびフィルタ装置の回路構成図である。FIG. 1 is a circuit configuration diagram of a multiplexer and a filter device using the acoustic wave resonator according to the first embodiment. 図２は、実施の形態１に係る弾性波共振器を表す図であって、（ａ）は平面図、（ｂ）は（ａ）に示すＩＩＢ－ＩＩＢ線の断面図である。2A and 2B are diagrams illustrating the acoustic wave resonator according to the first embodiment, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line IIB-IIB shown in FIG. 図３は、実施の形態１に係る弾性波共振器の等価回路である。FIG. 3 is an equivalent circuit of the acoustic wave resonator according to the first embodiment. 図４は、比較例における弾性波共振器を表す平面図である。FIG. 4 is a plan view showing an acoustic wave resonator in a comparative example. 図５は、実施の形態１および比較例における弾性波共振器の挿入損失を示す図である。FIG. 5 is a diagram showing insertion loss of the acoustic wave resonator in the first embodiment and the comparative example. 図６は、実施の形態１および比較例におけるフィルタ装置の挿入損失を示す図である。FIG. 6 is a diagram showing the insertion loss of the filter device in the first embodiment and the comparative example. 図７は、実施の形態１および比較例におけるマルチプレクサの周波数特性を示す図であって、（ａ）は挿入損失、（ｂ）はアイソレーション特性を示す図である。7A and 7B are diagrams illustrating the frequency characteristics of the multiplexer according to the first embodiment and the comparative example, where FIG. 7A is a diagram illustrating insertion loss and FIG. 7B is a diagram illustrating isolation characteristics. 図８は、実施の形態２に係る弾性波共振器を表す平面図である。FIG. 8 is a plan view illustrating an acoustic wave resonator according to the second embodiment. 図９は、実施の形態２に係る弾性波共振器の等価回路である。FIG. 9 is an equivalent circuit of the acoustic wave resonator according to the second embodiment. 図１０は、実施の形態３に係る弾性波共振器を表す図であって、（ａ）は平面図、（ｂ）は（ａ）に示すＸＢ－ＸＢ線の断面図である。10A and 10B are diagrams illustrating an acoustic wave resonator according to the third embodiment. FIG. 10A is a plan view, and FIG. 10B is a cross-sectional view taken along line XB-XB shown in FIG. 図１１は、実施の形態３に係る弾性波共振器の等価回路である。FIG. 11 is an equivalent circuit of the acoustic wave resonator according to the third embodiment.
　（実施の形態１）
　以下、本発明の実施の形態について、図面を用いて詳細に説明する。なお、以下で説明する実施の形態およびその変形例は、いずれも包括的または具体的な例を示すものである。以下の実施の形態およびその変形例で示される数値、形状、材料、構成要素、構成要素の配置および接続形態などは、一例であり、本発明を限定する主旨ではない。以下の実施の形態およびその変形例における構成要素のうち、独立請求項に記載されていない構成要素については、任意の構成要素として説明される。また、図面に示される構成要素の大きさ、または大きさの比は、必ずしも厳密ではない。 (Embodiment 1)
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that each of the embodiments and modifications thereof described below is a comprehensive or specific example. Numerical values, shapes, materials, constituent elements, arrangement of constituent elements, and connection forms shown in the following embodiments and modifications thereof are merely examples, and are not intended to limit the present invention. Among the constituent elements in the following embodiments and modifications thereof, constituent elements not described in the independent claims are described as arbitrary constituent elements. Further, the size of components shown in the drawings or the ratio of sizes is not necessarily strict.
　［１－１．マルチプレクサおよびフィルタ装置の回路構成］
　本実施の形態に係るマルチプレクサおよびフィルタ装置は、携帯電話などの通信機器に利用される。本実施の形態では、マルチプレクサとして、Ｂａｎｄ５（送信通過帯域：８２４～８４９ＭＨｚ、受信通過帯域：８６９～８９４ＭＨｚ）のデュプレクサを例に挙げて説明する。 [1-1. Circuit configuration of multiplexer and filter device]
The multiplexer and filter device according to the present embodiment are used for communication devices such as mobile phones. In the present embodiment, a duplexer of Band 5 (transmission pass band: 824 to 849 MHz, reception pass band: 869 to 894 MHz) will be described as an example of a multiplexer.
　図１は、実施の形態１に係るマルチプレクサ１の回路構成図である。 FIG. 1 is a circuit configuration diagram of the multiplexer 1 according to the first embodiment.
　マルチプレクサ１は、図１に示すように、一方のフィルタ装置である送信フィルタ７と、もう一方のフィルタ装置である受信フィルタ８と、アンテナ側の入出力端子６ａと、送信機側の入出力端子６ｂと、受信機側の入出力端子６ｃとを備える。送信フィルタ７および受信フィルタ８は、それぞれの引き出し線が束ねられてアンテナ側の入出力端子６ａに接続されている。 As shown in FIG. 1, the multiplexer 1 includes a transmission filter 7 that is one filter device, a reception filter 8 that is the other filter device, an input / output terminal 6a on the antenna side, and an input / output terminal on the transmitter side. 6b and an input / output terminal 6c on the receiver side. The transmission filter 7 and the reception filter 8 are connected to the input / output terminal 6a on the antenna side by bundling respective lead wires.
　送信フィルタ７は、送信機側の入出力端子６ｂから入力された送信波を、各送信通過帯域でフィルタリングしてアンテナ側の入出力端子６ａへ出力する帯域通過フィルタである。受信フィルタ８は、アンテナ側の入出力端子６ａから入力された受信波を、各受信通過帯域でフィルタリングして受信機側の入出力端子６ｃへ出力する帯域通過フィルタである。 The transmission filter 7 is a band pass filter that filters the transmission wave input from the input / output terminal 6b on the transmitter side in each transmission pass band and outputs it to the input / output terminal 6a on the antenna side. The reception filter 8 is a band pass filter that filters the received wave input from the input / output terminal 6a on the antenna side in each reception pass band and outputs it to the input / output terminal 6c on the receiver side.
　送信フィルタ７は、ラダー型フィルタであり、アンテナ側の入出力端子６ａと送信機側の入出力端子６ｂとを結ぶ経路上に設けられた直列腕共振子２ａ、２ｂ、２ｃ、２ｄ、および、直列腕共振子２ａから直列腕共振子２ｄまでの接続経路と基準端子（グランド）との間に接続された並列腕共振子３ａ、３ｂ、３ｃを有する。受信フィルタ８は、アンテナ側の入出力端子６ａと受信機側の入出力端子６ｃとを結ぶ経路上に設けられた直列共振子４および縦結合型弾性波フィルタ部５を有する。 The transmission filter 7 is a ladder-type filter, and series arm resonators 2a, 2b, 2c, 2d provided on a path connecting the input / output terminal 6a on the antenna side and the input / output terminal 6b on the transmitter side, and Parallel arm resonators 3a, 3b, and 3c are connected between a connection path from the series arm resonator 2a to the series arm resonator 2d and a reference terminal (ground). The reception filter 8 includes a series resonator 4 and a longitudinally coupled acoustic wave filter unit 5 provided on a path connecting the input / output terminal 6a on the antenna side and the input / output terminal 6c on the receiver side.
　本実施の形態に係る弾性波共振器１０は、例えば、送信フィルタ７の直列腕共振子２ｂに含まれる。なお、弾性波共振器１０は、送信フィルタ７における直列腕共振子２ａ～２ｄの少なくとも１つ、または、受信フィルタ８における直列共振子４に含まれていてもよい。また、弾性波共振器１０は、送信フィルタ７の並列腕共振子３ａ～３ｄに含まれていてもよいし、縦結合型弾性波フィルタ部５の共振子５ａ、５ｂに含まれていてもよい。以下、弾性波共振器１０の構成について説明する。 The elastic wave resonator 10 according to the present embodiment is included in the series arm resonator 2b of the transmission filter 7, for example. The acoustic wave resonator 10 may be included in at least one of the series arm resonators 2 a to 2 d in the transmission filter 7 or in the series resonator 4 in the reception filter 8. The elastic wave resonator 10 may be included in the parallel arm resonators 3 a to 3 d of the transmission filter 7 or may be included in the resonators 5 a and 5 b of the longitudinally coupled elastic wave filter unit 5. . Hereinafter, the configuration of the acoustic wave resonator 10 will be described.
　［１－２．弾性波共振器の構成］
　図２は、実施の形態１に係る弾性波共振器１０を表す図であって、（ａ）は平面図、（ｂ）は（ａ）に示すＩＩＢ－ＩＩＢ線の断面図である。図３は、弾性波共振器１０の等価回路である。 [1-2. Configuration of elastic wave resonator]
2A and 2B are diagrams illustrating the acoustic wave resonator 10 according to the first embodiment, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line IIB-IIB shown in FIG. FIG. 3 is an equivalent circuit of the acoustic wave resonator 10.
　弾性波共振器１０は、図２に示すように、圧電基板９０と、圧電基板９０上に設けられた第１ＩＤＴ電極１１および第２ＩＤＴ電極２２（以下、ＩＤＴ電極１１、ＩＤＴ電極２２と呼ぶ場合がある）と、圧電基板９０上に設けられた共用反射器３０、第１反射器３１および第２反射器３２とを備えている。 As shown in FIG. 2, the acoustic wave resonator 10 is sometimes referred to as a piezoelectric substrate 90, and a first IDT electrode 11 and a second IDT electrode 22 (hereinafter referred to as IDT electrode 11 and IDT electrode 22) provided on the piezoelectric substrate 90. A common reflector 30, a first reflector 31, and a second reflector 32 provided on the piezoelectric substrate 90.
　圧電基板９０は、例えば、所定のカット角を有するＬｉＴａＯ３圧電単結晶、ＬｉＮｂＯ３圧電単結晶、または圧電セラミックスからなる。 The piezoelectric substrate 90 is made of, for example, LiTaO 3 piezoelectric single crystal, LiNbO 3 piezoelectric single crystal, or piezoelectric ceramic having a predetermined cut angle.
　先に、ＩＤＴ電極１１、２２、共用反射器３０、第１反射器３１および第２反射器３２の断面構造について説明する。ＩＤＴ電極１１、２２は、図２の（ｂ）に示すように、密着層９１と、密着層９１上に設けられた主電極層９２との積層構造となっている。また、第１反射器３１、共用反射器３０および第２反射器３２は、ＩＤＴ電極１１、２２と同様に密着層９１と主電極層９２との積層構造となっている。 First, the cross-sectional structures of the IDT electrodes 11 and 22, the shared reflector 30, the first reflector 31, and the second reflector 32 will be described. As shown in FIG. 2B, the IDT electrodes 11 and 22 have a laminated structure of an adhesion layer 91 and a main electrode layer 92 provided on the adhesion layer 91. Further, the first reflector 31, the shared reflector 30, and the second reflector 32 have a laminated structure of the adhesion layer 91 and the main electrode layer 92, similarly to the IDT electrodes 11 and 22.
　密着層９１は、圧電基板９０と主電極層９２との密着性を向上させるための層であり、材料として、例えば、Ｔｉが用いられる。密着層９１の膜厚は、例えば、１２ｎｍである。主電極層９２は、材料として、例えば、Ｃｕを１％含有したＡｌが用いられる。主電極層９２の膜厚は、例えば１６２ｎｍである。保護層９３は、ＩＤＴ電極１１、２２を覆うように形成されている。保護層９３は、主電極層９２を外部環境から保護する、周波数温度特性を調整する、および、耐湿性を高めるなどを目的とする層であり、例えば、二酸化ケイ素を主成分とする膜である。 The adhesion layer 91 is a layer for improving the adhesion between the piezoelectric substrate 90 and the main electrode layer 92, and, for example, Ti is used as a material. The film thickness of the adhesion layer 91 is, for example, 12 nm. The main electrode layer 92 is made of, for example, Al containing 1% Cu. The film thickness of the main electrode layer 92 is, for example, 162 nm. The protective layer 93 is formed so as to cover the IDT electrodes 11 and 22. The protective layer 93 is a layer for the purpose of protecting the main electrode layer 92 from the external environment, adjusting frequency temperature characteristics, and improving moisture resistance, for example, a film containing silicon dioxide as a main component. .
　次に、図２の（ａ）を参照しつつ、圧電基板９０上におけるＩＤＴ電極１１、２２、共用反射器３０、第１反射器３１および第２反射器３２の配置について説明する。なお、圧電基板９０上には、上記の他に第１入出力配線４１、第２入出力配線４２、第１接続電極５１および第２接続電極５２が設けられている。 Next, the arrangement of the IDT electrodes 11 and 22, the shared reflector 30, the first reflector 31, and the second reflector 32 on the piezoelectric substrate 90 will be described with reference to FIG. In addition to the above, a first input / output wiring 41, a second input / output wiring 42, a first connection electrode 51, and a second connection electrode 52 are provided on the piezoelectric substrate 90.
　ＩＤＴ電極１１、２２は、所定方向Ｄ１に沿って配置されている。ＩＤＴ電極１１は、互いに対向する一対の櫛歯状電極１１ａおよび１１ｂにより構成されている。ＩＤＴ電極２２は、互いに対向する一対の櫛歯状電極２２ａおよび２２ｂにより構成されている。本実施の形態における所定方向Ｄ１は、弾性波伝搬方向と同じ方向である。なお、所定方向Ｄ１は、弾性波伝搬方向と同じ方向に限られず、弾性波伝搬方向に対して多少傾いた方向であってもよい。 IDT electrodes 11 and 22 are arranged along a predetermined direction D1. The IDT electrode 11 is composed of a pair of comb- like electrodes 11a and 11b facing each other. The IDT electrode 22 is composed of a pair of comb- like electrodes 22a and 22b facing each other. The predetermined direction D1 in the present embodiment is the same direction as the elastic wave propagation direction. The predetermined direction D1 is not limited to the same direction as the elastic wave propagation direction, and may be a direction slightly inclined with respect to the elastic wave propagation direction.
　以下、図２の（ａ）において、ＩＤＴ電極１１、２２のそれぞれの中心位置を基準として、所定方向Ｄ１に直交する直交方向Ｄ２のプラス側を一方、直交方向Ｄ２のマイナス側を他方と呼ぶことにする。 Hereinafter, in FIG. 2A, with reference to the center positions of the IDT electrodes 11 and 22, the plus side of the orthogonal direction D2 orthogonal to the predetermined direction D1 is referred to as one and the minus side of the orthogonal direction D2 is referred to as the other. To.
　ＩＤＴ電極１１の一方の櫛歯状電極１１ａは、所定方向Ｄ１に延びる一方の櫛歯バスバー１５ａと、櫛歯バスバー１５ａに接続されて直交方向Ｄ２（マイナス側）に延びる交差電極指１６およびオフセット電極指１７と、を有している。ＩＤＴ電極１１の他方の櫛歯状電極１１ｂは、所定方向Ｄ１に延びる他方の櫛歯バスバー１５ｂと、櫛歯バスバー１５ｂに接続されて直交方向Ｄ２（プラス側）に延びる交差電極指１６およびオフセット電極指１７と、を有している。 One comb-shaped electrode 11a of the IDT electrode 11 includes one comb-shaped bus bar 15a extending in a predetermined direction D1, a cross electrode finger 16 and an offset electrode connected to the comb-shaped bus bar 15a and extending in the orthogonal direction D2 (minus side). And a finger 17. The other comb-shaped electrode 11b of the IDT electrode 11 includes the other comb-shaped bus bar 15b extending in the predetermined direction D1, the cross electrode finger 16 connected to the comb-shaped bus bar 15b and extending in the orthogonal direction D2 (plus side) and the offset electrode. And a finger 17.
　ＩＤＴ電極２２の一方の櫛歯状電極２２ａは、所定方向Ｄ１に延びる一方の櫛歯バスバー２５ａと、櫛歯バスバー２５ａに接続されて直交方向Ｄ２（マイナス側）に延びる交差電極指２６およびオフセット電極指２７と、を有している。ＩＤＴ電極２２の他方の櫛歯状電極２２ｂは、所定方向Ｄ１に延びる他方の櫛歯バスバー２５ｂと、櫛歯バスバー２５ｂに接続されて直交方向Ｄ２（プラス側）に延びる交差電極指２６およびオフセット電極指２７と、を有している。 One comb-shaped electrode 22a of the IDT electrode 22 includes one comb-shaped bus bar 25a extending in a predetermined direction D1, a cross electrode finger 26 connected to the comb-shaped bus bar 25a and extending in the orthogonal direction D2 (minus side), and an offset electrode. Finger 27. The other comb-shaped electrode 22b of the IDT electrode 22 includes the other comb-shaped bus bar 25b extending in a predetermined direction D1, a cross electrode finger 26 connected to the comb-shaped bus bar 25b and extending in the orthogonal direction D2 (plus side), and an offset electrode. Finger 27.
　交差電極指１６、２６は、所定方向Ｄ１から見て、互いに交差している。オフセット電極指１７は、交差電極指１６、２６よりも長さが短く、交差電極指１６に対して直交方向Ｄ２に対向して配置されている。オフセット電極指２７は、交差電極指１６、２６よりも長さが短く、交差電極指２６に対して直交方向Ｄ２に対向して配置されている。弾性波共振器１０の波長は、所定方向Ｄ１における交差電極指１６、２６の繰り返しピッチλで規定される。 The cross electrode fingers 16 and 26 cross each other as seen from the predetermined direction D1. The offset electrode finger 17 is shorter than the cross electrode fingers 16 and 26 and is disposed to face the cross electrode finger 16 in the orthogonal direction D2. The offset electrode finger 27 is shorter than the cross electrode fingers 16 and 26 and is disposed to face the cross electrode finger 26 in the orthogonal direction D2. The wavelength of the acoustic wave resonator 10 is defined by the repetition pitch λ of the cross electrode fingers 16 and 26 in the predetermined direction D1.
　ＩＤＴ電極１１の一方の櫛歯バスバー１５ａおよびＩＤＴ電極２２の一方の櫛歯バスバー２５ａには第１入出力配線４１が接続され、ＩＤＴ電極１１の他方の櫛歯バスバー１５ｂおよびＩＤＴ電極２２の他方の櫛歯バスバー２５ｂには第２入出力配線４２が接続されている。すなわち、ＩＤＴ電極１１とＩＤＴ電極２２とは、第１入出力配線４１と第２入出力配線４２とを結ぶ経路において、並列接続されている。 The first input / output wiring 41 is connected to one comb-tooth bus bar 15 a of the IDT electrode 11 and one comb-tooth bus bar 25 a of the IDT electrode 22, and the other comb-tooth bus bar 15 b of the IDT electrode 11 and the other of the IDT electrode 22 are connected. A second input / output wiring 42 is connected to the comb-tooth bus bar 25b. That is, the IDT electrode 11 and the IDT electrode 22 are connected in parallel in a path connecting the first input / output wiring 41 and the second input / output wiring 42.
　共用反射器３０は、所定方向１において、ＩＤＴ電極１１とＩＤＴ電極２２との間に配置されている。共用反射器３０は、ＩＤＴ電極１１、２２で共通して使用される１つの反射器である。 The common reflector 30 is disposed between the IDT electrode 11 and the IDT electrode 22 in the predetermined direction 1. The shared reflector 30 is one reflector that is commonly used by the IDT electrodes 11 and 22.
　共用反射器３０は、一方の反射器バスバー３０ａと、他方の反射器バスバー３０ｂと、複数の反射電極指３０ｃとを有している。反射器バスバー３０ａ、３０ｂのそれぞれは、所定方向Ｄ１に延び、直交方向Ｄ２に互いに対向するように配置されている。複数の反射電極指３０ｃのそれぞれは、反射器バスバー３０ａ、３０ｂのそれぞれに接続され、直交方向Ｄ２に延びるように配置されている。また、複数の反射電極指３０ｃは、所定方向Ｄ１に所定間隔をあけて、互いに平行となるように配置されている。 The shared reflector 30 has one reflector bus bar 30a, the other reflector bus bar 30b, and a plurality of reflective electrode fingers 30c. Each of the reflector bus bars 30a and 30b is disposed so as to extend in a predetermined direction D1 and to face each other in the orthogonal direction D2. Each of the plurality of reflective electrode fingers 30c is connected to each of the reflector bus bars 30a and 30b and arranged to extend in the orthogonal direction D2. The plurality of reflective electrode fingers 30c are arranged to be parallel to each other at a predetermined interval in the predetermined direction D1.
　第１反射器３１は、所定方向Ｄ１においてＩＤＴ電極１１から見て共用反射器３０と反対側に設けられている。第１反射器３１は、一方の反射器バスバー３１ａ、他方の反射器バスバー３１ｂおよび複数の反射電極指３１ｃを有している。反射器バスバー３１ａ、３１ｂのそれぞれは、所定方向Ｄ１に延び、直交方向Ｄ２に互いに対向するように配置されている。複数の反射電極指３１ｃのそれぞれは、反射器バスバー３１ａ、３１ｂに接続され、直交方向Ｄ２に延びるように配置されている。また、複数の反射電極指３１ｃは、所定方向Ｄ１に所定間隔をあけて、互いに平行となるように配置されている。 The first reflector 31 is provided on the side opposite to the shared reflector 30 when viewed from the IDT electrode 11 in the predetermined direction D1. The first reflector 31 has one reflector bus bar 31a, the other reflector bus bar 31b, and a plurality of reflective electrode fingers 31c. Each of the reflector bus bars 31a and 31b extends in the predetermined direction D1 and is disposed so as to face each other in the orthogonal direction D2. Each of the plurality of reflective electrode fingers 31c is connected to the reflector bus bars 31a and 31b and arranged to extend in the orthogonal direction D2. The plurality of reflective electrode fingers 31c are arranged in parallel to each other at a predetermined interval in the predetermined direction D1.
　第２反射器３２は、所定方向Ｄ１においてＩＤＴ電極２２から見て共用反射器３０と反対側に設けられている。第２反射器３２は、一方の反射器バスバー３２ａと、他方の反射器バスバー３２ｂと、複数の反射電極指３２ｃとを有している。反射器バスバー３２ａ、３２ｂのそれぞれは、所定方向Ｄ１に延び、直交方向Ｄ２に互いに対向するように配置されている。複数の反射電極指３２ｃのそれぞれは、反射器バスバー３２ａ、３２ｂに接続され、直交方向Ｄ２に延びるように配置されている。また、複数の反射電極指３２ｃは、所定方向Ｄ１に所定間隔をあけて、互いに平行となるように配置されている。 The second reflector 32 is provided on the side opposite to the shared reflector 30 when viewed from the IDT electrode 22 in the predetermined direction D1. The second reflector 32 has one reflector bus bar 32a, the other reflector bus bar 32b, and a plurality of reflective electrode fingers 32c. Each of the reflector bus bars 32a and 32b extends in the predetermined direction D1, and is disposed so as to face each other in the orthogonal direction D2. Each of the plurality of reflective electrode fingers 32c is connected to the reflector bus bars 32a and 32b and arranged to extend in the orthogonal direction D2. The plurality of reflective electrode fingers 32c are arranged to be parallel to each other with a predetermined interval in the predetermined direction D1.
　本実施の形態では、他方の反射器バスバー３１ｂと他方の櫛歯バスバー１５ｂとが、所定方向Ｄ１に沿って配置され、接続されている。また、他方の櫛歯バスバー２５ｂと他方の反射器バスバー３２ｂとが、所定方向Ｄ１に沿って配置され、接続されている。 In the present embodiment, the other reflector bus bar 31b and the other comb bus bar 15b are arranged and connected along a predetermined direction D1. The other comb-tooth bus bar 25b and the other reflector bus bar 32b are arranged and connected along a predetermined direction D1.
　具体的には、他方の反射器バスバー３１ｂと他方の櫛歯バスバー１５ｂとの間に第１接続電極５１が設けられ、第１接続電極５１は、他方の反射器バスバー３１ｂと他方の櫛歯バスバー１５ｂとを接続している。また、他方の櫛歯バスバー２５ｂと他方の反射器バスバー３２ｂとの間に第２接続電極５２が設けられ、第２接続電極５２は、他方の櫛歯バスバー２５ｂと他方の反射器バスバー３２ｂとを接続している。 Specifically, a first connection electrode 51 is provided between the other reflector bus bar 31b and the other comb bus bar 15b, and the first connection electrode 51 is connected to the other reflector bus bar 31b and the other comb bus bar. 15b. A second connection electrode 52 is provided between the other comb-tooth bus bar 25b and the other reflector bus bar 32b, and the second connection electrode 52 connects the other comb-tooth bus bar 25b and the other reflector bus bar 32b. Connected.
　接続電極５１の幅は、反射器バスバー３１ｂ、櫛歯バスバー１５ｂの幅と同じであり、接続電極５１の厚みは、反射器バスバー３１ｂ、櫛歯バスバー１５ｂの厚みと同じである。すなわち、反射器バスバー３１ｂ、接続電極５１、櫛歯バスバー１５ｂは、所定方向Ｄ１に沿って直線状に一体となって形成されている。接続電極５２の幅は、櫛歯バスバー２５ｂ、反射器バスバー３２ｂの幅と同じであり、接続電極５２の厚みは、櫛歯バスバー２５ｂ、反射器バスバー３２ｂの厚みと同じである。すなわち、櫛歯バスバー２５ｂ、接続電極５２、反射器バスバー３２ｂは、所定方向Ｄ１に沿って直線状に一体となって形成されている。接続電極５１、５２は、櫛歯バスバー１５ｂ、２５ｂおよび反射器バスバー３１ｂ、３２ｂと同一プロセス（例えばリフトオフ法など）により形成され、同じ積層構造を有している。 The width of the connection electrode 51 is the same as the width of the reflector bus bar 31b and the comb-shaped bus bar 15b, and the thickness of the connection electrode 51 is the same as the thickness of the reflector bus bar 31b and the comb-shaped bus bar 15b. That is, the reflector bus bar 31b, the connection electrode 51, and the comb-shaped bus bar 15b are integrally formed linearly along the predetermined direction D1. The width of the connection electrode 52 is the same as the width of the comb-tooth bus bar 25b and the reflector bus bar 32b, and the thickness of the connection electrode 52 is the same as the thickness of the comb-tooth bus bar 25b and the reflector bus bar 32b. That is, the comb-tooth bus bar 25b, the connection electrode 52, and the reflector bus bar 32b are integrally formed linearly along the predetermined direction D1. The connection electrodes 51 and 52 are formed by the same process (for example, lift-off method) as the comb-tooth bus bars 15b and 25b and the reflector bus bars 31b and 32b, and have the same laminated structure.
　これらの構造により、弾性波共振器１０は、ＩＤＴ電極１１、２２で構成されるそれぞれの弾性波素子Ｆ１、Ｆ２に対応して、容量Ｃ１、Ｃ２を有する（図３参照）。具体的には、容量Ｃ１は、接続電極５１で接続された反射器バスバー３１ｂおよび櫛歯バスバー１５ｂの反対側に位置する、一方の反射器バスバー３１ａと一方の櫛歯バスバー１５ａとが、異なる電位をもって対向することで形成される。容量Ｃ２は、接続電極５１で接続された櫛歯バスバー２５ｂおよび反射器バスバー３２ｂの反対側に位置する、一方の櫛歯バスバー２５ａと一方の反射器バスバー３２ａとが、異なる電位をもって対向することで形成される。このように、弾性波共振器１０が容量Ｃ１、Ｃ２を有することで、弾性波共振器１０における共振特性の急峻性を向上することができる。 With these structures, the acoustic wave resonator 10 has capacitors C1 and C2 corresponding to the respective acoustic wave elements F1 and F2 configured by the IDT electrodes 11 and 22 (see FIG. 3). Specifically, the capacitor C1 is configured such that one reflector bus bar 31a and one comb tooth bus bar 15a located on the opposite sides of the reflector bus bar 31b and the comb tooth bus bar 15b connected by the connection electrode 51 have different potentials. Formed by facing each other. The capacitor C2 is configured such that one comb-tooth bus bar 25a and one reflector bus bar 32a, which are located on the opposite sides of the comb-tooth bus bar 25b and the reflector bus bar 32b connected by the connection electrode 51, face each other with different potentials. It is formed. As described above, since the acoustic wave resonator 10 includes the capacitors C1 and C2, the steepness of the resonance characteristics in the acoustic wave resonator 10 can be improved.
　［１－３．効果等］
　ここで、本実施の形態に係る弾性波共振器１０の効果等を説明するため、比較例における弾性波共振器５１０を例に挙げて説明する。 [1-3. Effect]
Here, in order to explain the effect of the acoustic wave resonator 10 according to the present embodiment, the acoustic wave resonator 510 in the comparative example will be described as an example.
　図４は、比較例における弾性波共振器５１０を表す平面図である。 FIG. 4 is a plan view showing an acoustic wave resonator 510 in a comparative example.
　比較例の弾性波共振器５１０は、第１接続電極５１および第２接続電極５２を有していない点で、実施の形態１と異なる。弾性波共振器５１０では、他方の反射器バスバー３０ｂと他方の櫛歯バスバー１５ｂが接続されていないため、一方の反射器バスバー３１ａと一方の櫛歯バスバー１５ａとの間で容量が発生しにくい構造となっている。また、他方の櫛歯バスバー２５ｂと他方の反射器バスバー３２ｂとが接続されていないため、一方の櫛歯バスバー２５ａと一方の反射器バスバー３２ａとの間で容量が発生しにくい構造となっている。 The acoustic wave resonator 510 of the comparative example is different from the first embodiment in that the first connection electrode 51 and the second connection electrode 52 are not provided. In the acoustic wave resonator 510, since the other reflector bus bar 30b and the other comb-tooth bus bar 15b are not connected, a structure in which capacitance is hardly generated between the one reflector bus bar 31a and the one comb-tooth bus bar 15a. It has become. In addition, since the other comb-tooth bus bar 25b and the other reflector bus bar 32b are not connected to each other, it is difficult to generate a capacity between the one comb-tooth bus bar 25a and the one reflector bus bar 32a. .
　図５は、実施の形態１および比較例における弾性波共振器の挿入損失を示す図である。 FIG. 5 is a diagram showing the insertion loss of the acoustic wave resonator in the first embodiment and the comparative example.
　図５に示すように、例えば、周波数８４６ＭＨｚから８５７ＭＨｚへの変化に対して、比較例の弾性波共振器５１０の挿入損失の増大値が５．５７ｄＢであるのに対し、実施の形態１の弾性波共振器１０の挿入損失の増大値は、５．８４ｄＢであり、比較例に比べて急峻性が高くなっている。 As shown in FIG. 5, for example, with respect to a change from a frequency of 846 MHz to 857 MHz, the increase value of the insertion loss of the acoustic wave resonator 510 of the comparative example is 5.57 dB, whereas the elasticity of the first embodiment is The increase value of the insertion loss of the wave resonator 10 is 5.84 dB, which is higher than the comparative example.
　図６は、実施の形態１および比較例におけるフィルタ装置の挿入損失を示す図である。 FIG. 6 is a diagram showing the insertion loss of the filter device in the first embodiment and the comparative example.
　実施の形態１のフィルタ装置（送信フィルタ７）では、図１に示す直列腕共振子２ｂが、本実施の形態の弾性波共振器１０を含む構成となっている。それに対し、比較例のフィルタ装置では、図１に示す直列腕共振子２ｂが、比較例の弾性波共振器５１０（図４参照）を含む構成となっている。 In the filter device (transmission filter 7) of the first embodiment, the series arm resonator 2b shown in FIG. 1 includes the elastic wave resonator 10 of the present embodiment. On the other hand, in the filter device of the comparative example, the series arm resonator 2b shown in FIG. 1 includes the elastic wave resonator 510 (see FIG. 4) of the comparative example.
　図６に示すように、例えば、周波数８５６ＭＨｚから８６５ＭＨｚへの変化に対して、比較例のフィルタ装置の通過帯域における挿入損失の増大値が２７．３７ｄＢであるのに対し、実施の形態１のフィルタ装置の通過帯域における挿入損失の増大値は、２９．１８ｄＢであり、比較例に比べて急峻性が高くなっている。 As shown in FIG. 6, for example, the increase value of the insertion loss in the pass band of the filter device of the comparative example is 27.37 dB with respect to the change from the frequency 856 MHz to 865 MHz, whereas the filter of the first embodiment The increase value of the insertion loss in the pass band of the device is 29.18 dB, which is higher than the comparative example.
　図７は、実施の形態１および比較例におけるマルチプレクサの周波数特性を示す図であって、（ａ）は挿入損失、（ｂ）はアイソレーション特性を示す図である。なお、アイソレーション特性は、図１に示すマルチプレクサにおいて、Ｔｘ－Ｒｘ間の挿入損失を測定することで求めた。 FIG. 7 is a diagram showing the frequency characteristics of the multiplexers in the first embodiment and the comparative example, where (a) is an insertion loss and (b) is a diagram showing isolation characteristics. The isolation characteristic was obtained by measuring the insertion loss between Tx and Rx in the multiplexer shown in FIG.
　図７の（ａ）に示すように、例えば、周波数８５６ＭＨｚから８６５ＭＨｚへの変化に対して、比較例のマルチプレクサの送信通過帯域における挿入損失の増大値が２７．６４ｄＢであるのに対し、実施の形態１のマルチプレクサ１の送信通過帯域における挿入損失の増大値は、２９．４８ｄＢであり、比較例に比べて急峻性が高くなっている。 As shown in FIG. 7A, for example, with respect to a change from a frequency of 856 MHz to 865 MHz, the increase value of the insertion loss in the transmission passband of the multiplexer of the comparative example is 27.64 dB. The increase value of the insertion loss in the transmission passband of the multiplexer 1 of the first embodiment is 29.48 dB, which is higher than the comparative example.
　また、図７の（ｂ）に示すように、実施の形態１は、比較例に対して、Ｔｘロスが２ｄＢである周波数とＲｘ帯Ｉｓｏが５０ｄＢである周波数との周波数差Δｆが０．３ＭＨｚ改善し（小さくなり）、アイソレーション性が向上している。 As shown in FIG. 7B, the first embodiment has a frequency difference Δf of 0.3 MHz between the frequency where the Tx loss is 2 dB and the frequency where the Rx band Iso is 50 dB as compared with the comparative example. Improved (becomes smaller) and improved isolation.
　［１－４．まとめ］
　本実施の形態に係る弾性波共振器１０は、圧電基板９０と、互いに対向する一対の櫛歯状電極１１ａ、１１ｂを有するＩＤＴ電極１１、および、一対の櫛歯状電極２２ａ、２２ｂを有するＩＤＴ電極２２であって、圧電基板９０上に設けられ、所定方向Ｄ１に沿って配置されたＩＤＴ電極１１およびＩＤＴ電極２２と、圧電基板９０上に設けられ、所定方向Ｄ１においてＩＤＴ電極１１とＩＤＴ電極２２との間に配置された共用反射器３０と、圧電基板９０上に設けられ、所定方向Ｄ１においてＩＤＴ電極１１から見て共用反射器３０と反対側に設けられた第１反射器３１と、圧電基板９０上に設けられ、所定方向Ｄ１においてＩＤＴ電極２２から見て共用反射器３０と反対側に設けられた第２反射器３２とを備えている。ＩＤＴ電極１１は、所定方向Ｄ１に延びて直交方向Ｄ２に互いに対向する一方の櫛歯バスバー１５ａおよび他方の櫛歯バスバー１５ｂを有している。ＩＤＴ電極２２は、所定方向Ｄ１に延びて直交方向Ｄ２に互いに対向する一方の櫛歯バスバー２５ａおよび他方の櫛歯バスバー２５ｂを有している。第１反射器３１は、所定方向Ｄ１に延びて直交方向Ｄ２に互いに対向する一方の反射器バスバー３１ａおよび他方の反射器バスバー３１ｂを有している。第２反射器３２は、所定方向Ｄ１に延びて直交方向Ｄ２に互いに対向する一方の反射器バスバー３２ａおよび他方の反射器バスバー３２ｂを有している。そして、第１反射器３１の他方の反射器バスバー３１ｂと、ＩＤＴ電極１１の他方の櫛歯バスバー１５ｂとが所定方向Ｄ１に沿って配置され、互いに接続されている。また、ＩＤＴ電極２２の他方の櫛歯バスバー２５ｂと、第２反射器３２の他方の反射器バスバー３２ｂとが所定方向Ｄ１に沿って配置され、互いに接続されている。 [1-4. Summary]
The acoustic wave resonator 10 according to the present embodiment includes a piezoelectric substrate 90, an IDT electrode 11 having a pair of comb- like electrodes 11a and 11b facing each other, and an IDT having a pair of comb- like electrodes 22a and 22b. The electrode 22 is provided on the piezoelectric substrate 90 and disposed along the predetermined direction D1, and the IDT electrode 11 and the IDT electrode 22 are provided on the piezoelectric substrate 90, and the IDT electrode 11 and the IDT electrode in the predetermined direction D1. 22 and the first reflector 31 provided on the piezoelectric substrate 90 and provided on the opposite side of the common reflector 30 when viewed from the IDT electrode 11 in the predetermined direction D1; The second reflector 32 is provided on the piezoelectric substrate 90 and provided on the opposite side of the shared reflector 30 when viewed from the IDT electrode 22 in the predetermined direction D1. The IDT electrode 11 has one comb-tooth bus bar 15a and the other comb-tooth bus bar 15b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2. The IDT electrode 22 has one comb-tooth bus bar 25a and the other comb-tooth bus bar 25b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2. The first reflector 31 has one reflector bus bar 31a and the other reflector bus bar 31b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2. The second reflector 32 has one reflector bus bar 32a and the other reflector bus bar 32b extending in the predetermined direction D1 and facing each other in the orthogonal direction D2. The other reflector bus bar 31b of the first reflector 31 and the other comb bus bar 15b of the IDT electrode 11 are arranged along the predetermined direction D1 and connected to each other. Further, the other comb-tooth bus bar 25b of the IDT electrode 22 and the other reflector bus bar 32b of the second reflector 32 are arranged along the predetermined direction D1 and connected to each other.
　このように弾性波共振器１０では、互いに接続された反射器バスバー３１ｂおよび櫛歯バスバー１５ｂの反対側に位置する、一方の反射器バスバー３１ａと一方の櫛歯バスバー１５ａとが、異なる電位をもって対向するので、弾性波共振器１０に容量が付加される。また、互いに接続された櫛歯バスバー２５ｂおよび反射器バスバー３２ｂの反対側に位置する、一方の櫛歯バスバー２５ａと一方の反射器バスバー３２ａとが、異なる電位をもって対向するので、弾性波共振器１０に容量が付加される。このように、弾性波共振器１０に容量が付加されることで、弾性波共振器１０における共振特性の急峻性を向上することができる。 As described above, in the acoustic wave resonator 10, one reflector bus bar 31a and one comb bus bar 15a, which are located on opposite sides of the reflector bus bar 31b and the comb bus bar 15b connected to each other, face each other with different potentials. Therefore, a capacitance is added to the acoustic wave resonator 10. Since one comb-tooth bus bar 25a and one reflector bus bar 32a located on the opposite sides of the comb-tooth bus bar 25b and the reflector bus bar 32b connected to each other face each other with different potentials, the acoustic wave resonator 10 Capacity is added to In this way, by adding the capacitance to the acoustic wave resonator 10, the steepness of the resonance characteristics in the acoustic wave resonator 10 can be improved.
　なお、弾性波共振器１０では、反射器バスバー３１ｂと櫛歯バスバー１５ｂとが接続された状態、および、櫛歯バスバー２５ｂと反射器バスバー３２ｂとが接続された状態のうち、少なくとも一方の状態を有していれば上記効果を有する。 In the acoustic wave resonator 10, at least one of the state where the reflector bus bar 31b and the comb bus bar 15b are connected and the state where the comb bus bar 25b and the reflector bus bar 32b are connected is used. If it has, it has the said effect.
　（実施の形態２）
　図８は、実施の形態２に係る弾性波共振器１０Ａを表す平面図である。図９は、弾性波共振器１０Ａの等価回路である。 (Embodiment 2)
FIG. 8 is a plan view showing an acoustic wave resonator 10A according to the second embodiment. FIG. 9 is an equivalent circuit of the acoustic wave resonator 10A.
　この弾性波共振器１０Ａは、実施の形態１の弾性波共振器１０に、さらに、第１対向電極６１および第２対向電極６２を備えている。 This elastic wave resonator 10A is further provided with a first counter electrode 61 and a second counter electrode 62 in addition to the elastic wave resonator 10 of the first embodiment.
　具体的には、第１対向電極６１は、直交方向Ｄ２において、第１反射器３１の一方の反射器バスバー３１ａから見て他方の反射器バスバー３１ｂと反対側に設けられ、グランドに接続されている。第１対向電極６１は、反射器バスバー３１ａに対して所定距離をあけて平行に配置されることで反射器バスバー３１ａと対向している。 Specifically, the first counter electrode 61 is provided on the opposite side to the other reflector bus bar 31b when viewed from one reflector bus bar 31a of the first reflector 31 in the orthogonal direction D2, and is connected to the ground. Yes. The first counter electrode 61 faces the reflector bus bar 31a by being arranged in parallel with a predetermined distance from the reflector bus bar 31a.
　また、第２対向電極６２は、直交方向Ｄ２において、第２反射器３２の一方の反射器バスバー３２ａから見て他方の反射器バスバー３２ｂと反対側に設けられ、グランドに接続されている。第２対向電極６２は、反射器バスバー３２ａに対して所定距離をあけて平行に配置されることで反射器バスバー３２ａと対向している。 Further, the second counter electrode 62 is provided on the opposite side of the second reflector 32 from the other reflector bus bar 32b when viewed from the one reflector bus bar 32a in the orthogonal direction D2, and is connected to the ground. The second counter electrode 62 is opposed to the reflector bus bar 32a by being arranged parallel to the reflector bus bar 32a at a predetermined distance.
　なお、反射器バスバー３１ａと第１対向電極６１との間、および、反射器バスバー３２ａと第２対向電極６２との間には、前述した保護層９３（例えば二酸化ケイ素）と同じ材料が充填されている。 The same material as that of the protective layer 93 (for example, silicon dioxide) is filled between the reflector bus bar 31a and the first counter electrode 61 and between the reflector bus bar 32a and the second counter electrode 62. ing.
　この構造により、弾性波共振器１０Ａは、図９に示すように、容量Ｃ３、Ｃ４を有する。容量Ｃ３は、一方の反射器バスバー３１ａと一方の櫛歯バスバー１５ａとが異なる電位をもって対向すること、および、一方の反射器バスバー３１ａと第１対向電極６１とが異なる電位をもって対向することで形成されている。また、容量Ｃ４は、一方の櫛歯バスバー２５ａと一方の反射器バスバー３２ａとが異なる電位をもって対向すること、および、一方の反射器バスバー３２ａと第２対向電極６２とが異なる電位をもって対向することで形成されている。このように、弾性波共振器１０Ａが、容量Ｃ３、Ｃ４を有することで、弾性波共振器１０Ａの共振特性の急峻性を向上することができる。 With this structure, the acoustic wave resonator 10A has capacitors C3 and C4 as shown in FIG. The capacitor C3 is formed by one reflector bus bar 31a and the one comb-tooth bus bar 15a facing each other with different potentials, and one reflector bus bar 31a and the first counter electrode 61 facing each other with different potentials. Has been. In the capacitor C4, one comb-tooth bus bar 25a and one reflector bus bar 32a face each other with different potentials, and one reflector bus bar 32a and the second counter electrode 62 face each other with different potentials. It is formed with. Thus, since the acoustic wave resonator 10A has the capacitors C3 and C4, the steepness of the resonance characteristics of the acoustic wave resonator 10A can be improved.
　なお、弾性波共振器１０Ａでは、反射器バスバー３１ａと第１対向電極６１とが対向する状態、および、反射器バスバー３２ａと第２対向電極６２とが対向する状態のうちの少なくとも一方の状態を有していれば上記効果を有する。 In the acoustic wave resonator 10A, at least one of the state where the reflector bus bar 31a and the first counter electrode 61 face each other and the state where the reflector bus bar 32a and the second counter electrode 62 face each other is set. If it has, it has the said effect.
　（実施の形態３）
　図１０は、実施の形態３に係る弾性波共振器１０Ｂを表す図であって、（ａ）は平面図、（ｂ）は（ａ）に示すＸＢ－ＸＢ線の断面図である平面図である。図１１は、弾性波共振器１０Ｂの等価回路である。なお、図１０の（ｂ）では、密着層９１、主電極層９２および保護層９３の図示を省略している。 (Embodiment 3)
10A and 10B are diagrams illustrating an acoustic wave resonator 10B according to the third embodiment, in which FIG. 10A is a plan view and FIG. 10B is a plan view that is a cross-sectional view taken along line XB-XB shown in FIG. is there. FIG. 11 is an equivalent circuit of the acoustic wave resonator 10B. In FIG. 10B, illustration of the adhesion layer 91, the main electrode layer 92, and the protective layer 93 is omitted.
　この弾性波共振器１０Ｂは、実施の形態１の弾性波共振器１０に、さらに、第３対向電極６３および第４対向電極６４を備えている。 This elastic wave resonator 10B further includes a third counter electrode 63 and a fourth counter electrode 64 in addition to the elastic wave resonator 10 of the first embodiment.
　具体的には、第１反射器３１の一方の反射器バスバー３１ａ上に第１絶縁層６６が設けられ、第１絶縁層６６上には、一方の反射器バスバー３１ａと厚み方向に対向する第３対向電極６３が設けられている。第３対向電極６３は、所定方向Ｄ１に沿って形成され、第３対向電極６３の所定方向Ｄ１のプラス側の端部は、一方の櫛歯バスバー１５ａに接続されている。 Specifically, a first insulating layer 66 is provided on one reflector bus bar 31a of the first reflector 31, and a first opposing bus bar 31a in the thickness direction is provided on the first insulating layer 66. Three counter electrodes 63 are provided. The third counter electrode 63 is formed along the predetermined direction D1, and the positive end of the third counter electrode 63 in the predetermined direction D1 is connected to one comb-tooth bus bar 15a.
　また、第２反射器３２の一方の反射器バスバー３２ａ上に第２絶縁層６７が設けられ、第２絶縁層６７上には、一方の反射器バスバー３２ａと厚み方向に対向する第４対向電極６４が設けられている。第４対向電極６４は、所定方向Ｄ１に沿って形成され、第４対向電極６４の所定方向Ｄ１のマイナス側の端部は一方の櫛歯バスバー２５ａに接続されている。第１絶縁層６６および第２絶縁層６７の材質は、例えば、二酸化ケイ素、ポリイミドから適宜選択される。 Further, a second insulating layer 67 is provided on one reflector bus bar 32a of the second reflector 32, and a fourth counter electrode facing the one reflector bus bar 32a in the thickness direction is provided on the second insulating layer 67. 64 is provided. The fourth counter electrode 64 is formed along the predetermined direction D1, and the negative end of the fourth counter electrode 64 in the predetermined direction D1 is connected to one comb-shaped bus bar 25a. The material of the first insulating layer 66 and the second insulating layer 67 is appropriately selected from, for example, silicon dioxide and polyimide.
　この構造により、弾性波共振器１０Ｂは、図１１に示すように、容量Ｃ５、Ｃ６を有する。容量Ｃ５は、一方の反射器バスバー３１ａと一方の櫛歯バスバー１５ａとが異なる電位をもって対向すること、および、一方の反射器バスバー３１ａと第３対向電極６３とが異なる電位をもって対向することで形成されている。また、容量Ｃ６は、一方の櫛歯バスバー２５ａと一方の反射器バスバー３２ａとが異なる電位をもって対向すること、および、一方の反射器バスバー３２ａと第４対向電極６４とが異なる電位をもって対向することで形成されている。このように、弾性波共振器１０Ｂが、容量Ｃ５、Ｃ６を有することで、弾性波共振器１０Ｂの共振特性の急峻性を向上することができる。 With this structure, the acoustic wave resonator 10B has capacitors C5 and C6 as shown in FIG. The capacitor C5 is formed by facing one reflector bus bar 31a and one comb-tooth bus bar 15a with different potentials, and facing one reflector bus bar 31a and the third counter electrode 63 with different potentials. Has been. In the capacitor C6, one comb bus bar 25a and one reflector bus bar 32a face each other with different potentials, and one reflector bus bar 32a and the fourth counter electrode 64 face each other with different potentials. It is formed with. As described above, since the acoustic wave resonator 10B includes the capacitors C5 and C6, the steepness of the resonance characteristics of the acoustic wave resonator 10B can be improved.
　なお、弾性波共振器１０Ｂでは、反射器バスバー３１ａと第３対向電極６３とが対向する状態、および、反射器バスバー３２ａと第４対向電極６４とが対向する状態のうちの少なくとも一方の状態を有していれば上記効果を有する。 In the acoustic wave resonator 10B, at least one of the state where the reflector bus bar 31a and the third counter electrode 63 face each other and the state where the reflector bus bar 32a and the fourth counter electrode 64 face each other is set. If it has, it has the said effect.
　（その他の形態など）
　以上、本発明の実施の形態に係る弾性波共振器、フィルタ装置およびマルチプレクサについて説明したが、本発明は、上記実施の形態には限定されない。例えば、上記実施の形態に次のような変形を施した態様も、本発明に含まれる。 (Other forms etc.)
The acoustic wave resonator, the filter device, and the multiplexer according to the embodiment of the present invention have been described above, but the present invention is not limited to the above embodiment. For example, an aspect in which the following embodiment is modified as described below is also included in the present invention.
　例えば、弾性波共振器１０～１０Ｂは、弾性表面波共振器に限られず、弾性境界波共振器であってもよい。 For example, the acoustic wave resonators 10 to 10B are not limited to surface acoustic wave resonators, and may be boundary acoustic wave resonators.
　例えば、弾性波共振器１０～１０Ｂでは、櫛歯状電極１１ａ、１１ｂ、２２ａ、２２ｂにオフセット電極指１７、２７を設けることで、高調波などに起因する不要な周波数成分であるスプリアスなどを抑制している。ただし、それに限られず、櫛歯状電極１１ａ、１１ｂ、２２ａ、２２ｂの電極指は、オフセット電極指１７、２７を有せず、交差電極指１６、２６のみで構成されていてもよい。 For example, in the acoustic wave resonators 10 to 10B, the offset electrode fingers 17 and 27 are provided on the comb-shaped electrodes 11a, 11b, 22a, and 22b, thereby suppressing spurious and the like that are unnecessary frequency components caused by harmonics and the like. is doing. However, the electrode fingers of the comb-shaped electrodes 11a, 11b, 22a, and 22b are not limited thereto, and may include the cross electrode fingers 16 and 26 without the offset electrode fingers 17 and 27.
　例えば、反射器バスバー３１ａ、３２ａは、反射電極指３１ｃ、３２ｃよりも幅が広く、また、厚さが厚くなるように形成されていてもよい。一方の櫛歯バスバー１５ａ、２５ａは、交差電極指１６、２６およびオフセット電極指１７、２７よりも幅が広く、また、厚さが厚くなるように形成されていてもよい。反射器バスバー３１ａ、３２ａ、櫛歯バスバー１５ａ、２５ａの幅を広くまたは厚さを厚くすることで、対向面積を増やし、容量Ｃ１、Ｃ２を大きくすることができる。これにより、弾性波共振器１０～１０Ｂの共振特性の急峻性を向上することができる。 For example, the reflector bus bars 31a and 32a may be formed to be wider and thicker than the reflective electrode fingers 31c and 32c. One comb- tooth bus bar 15a, 25a may be formed to be wider and thicker than the cross electrode fingers 16, 26 and the offset electrode fingers 17, 27. By increasing the width of the reflector bus bars 31a and 32a and the comb- tooth bus bars 15a and 25a or increasing the thickness, the facing area can be increased and the capacities C1 and C2 can be increased. Thereby, the steepness of the resonance characteristics of the acoustic wave resonators 10 to 10B can be improved.
　また、弾性波共振器１０の密着層９１、主電極層９２および保護層９３を構成する材料は、上述した材料に限定されない。さらに、ＩＤＴ電極１１、２２は、上記積層構造でなくてもよい。ＩＤＴ電極１１、２２は、例えば、Ｔｉ、Ａｌ、Ｃｕ、Ｐｔ、Ａｕ、Ａｇ、Ｐｄなどの金属または合金から構成されてもよく、また、上記の金属または合金から構成される複数の積層体から構成されてもよい。また、保護層９３は、形成されていなくてもよい。 Further, the materials constituting the adhesion layer 91, the main electrode layer 92, and the protective layer 93 of the acoustic wave resonator 10 are not limited to the materials described above. Furthermore, the IDT electrodes 11 and 22 do not have to have the above laminated structure. The IDT electrodes 11 and 22 may be made of, for example, a metal or an alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd. It may be configured. Further, the protective layer 93 may not be formed.
　また、弾性波共振器１０の圧電基板９０は、高音速支持基板と、低音速膜と、圧電膜とがこの順で積層された積層構造であってもよい。圧電膜は、例えば、５０°ＹカットＸ伝搬ＬｉＴａＯ３圧電単結晶または圧電セラミックス（Ｘ軸を中心軸としてＹ軸から５０°回転した軸を法線とする面で切断したタンタル酸リチウム単結晶、またはセラミックスであって、Ｘ軸方向に弾性表面波が伝搬する単結晶またはセラミックス）からなる。圧電膜は、例えば、厚みが６００ｎｍである。高音速支持基板は、低音速膜、圧電膜ならびにＩＤＴ電極を支持する基板である。高音速支持基板は、さらに、圧電膜を伝搬する表面波や境界波の弾性波よりも、高音速支持基板中のバルク波の音速が高速となる基板であり、弾性表面波を圧電膜および低音速膜が積層されている部分に閉じ込め、高音速支持基板より下方に漏れないように機能する。高音速支持基板は、例えば、シリコン基板であり、厚みは、例えば２００μｍである。低音速膜は、圧電膜を伝搬するバルク波よりも、低音速膜中のバルク波の音速が低速となる膜であり、圧電膜と高音速支持基板との間に配置される。この構造と、弾性波が本質的に低音速な媒質にエネルギーが集中するという性質とにより、弾性表面波エネルギーのＩＤＴ電極外への漏れが抑制される。低音速膜は、例えば、二酸化ケイ素を主成分とする膜であり、厚みは、例えば６７０ｎｍである。この積層構造によれば、圧電基板９０を単層で使用している構造と比較して、共振周波数および反共振周波数におけるＱ値を大幅に高めることが可能となる。すなわち、Ｑ値が高い弾性表面波共振器を構成し得るので、当該弾性表面波共振器を用いて、挿入損失が小さいフィルタを構成することが可能となる。 Further, the piezoelectric substrate 90 of the acoustic wave resonator 10 may have a laminated structure in which a high sound velocity supporting substrate, a low sound velocity film, and a piezoelectric film are laminated in this order. The piezoelectric film may be, for example, a 50 ° Y-cut X-propagating LiTaO 3 piezoelectric single crystal or a piezoelectric ceramic (a lithium tantalate single crystal cut along a plane whose axis is rotated by 50 ° from the Y axis with the X axis as the central axis, Alternatively, it is made of ceramic and is made of a single crystal or ceramic in which surface acoustic waves propagate in the X-axis direction. The piezoelectric film has a thickness of 600 nm, for example. The high sound velocity support substrate is a substrate that supports the low sound velocity film, the piezoelectric film, and the IDT electrode. The high-sonic support substrate is a substrate in which the acoustic velocity of the bulk wave in the high-sonic support substrate is higher than that of the surface wave or boundary wave that propagates through the piezoelectric film. It functions in such a way that it is confined in the portion where the sonic film is laminated and does not leak below the high sonic support substrate. The high sound speed support substrate is, for example, a silicon substrate and has a thickness of, for example, 200 μm. The low acoustic velocity film is a membrane in which the acoustic velocity of the bulk wave in the low acoustic velocity film is lower than the bulk wave propagating through the piezoelectric membrane, and is disposed between the piezoelectric membrane and the high acoustic velocity support substrate. Due to this structure and the property that energy is concentrated in a medium where acoustic waves are essentially low in sound velocity, leakage of surface acoustic wave energy to the outside of the IDT electrode is suppressed. The low acoustic velocity film is, for example, a film mainly composed of silicon dioxide and has a thickness of, for example, 670 nm. According to this laminated structure, the Q value at the resonance frequency and the anti-resonance frequency can be significantly increased as compared with a structure in which the piezoelectric substrate 90 is used as a single layer. That is, since a surface acoustic wave resonator having a high Q value can be configured, a filter with a small insertion loss can be configured using the surface acoustic wave resonator.
　また、本実施の形態では、所定方向Ｄ１が弾性波伝搬方向と同じ方向である例を示したが、それに限られず、所定方向Ｄ１は、弾性波伝搬方向に対して多少傾いた方向であってもよい。例えば、実施の形態１における櫛歯バスバー１５ａ、１５ｂ、２５ａ、２５ｂおよび反射器バスバー３０ａ、３０ｂ、３１ａ、３１ｂ、３２ａ、３２ｂのそれぞれが、弾性波伝搬方向に対して、０°以上１０°以下傾いた方向に延びて形成されていてもよい。その場合、交差電極指１６、２６、オフセット電極指１７、２７および反射電極指３０ｃ、３１ｃ、３２ｃのそれぞれは、弾性波伝搬方向に対して直交する方向に延びて形成されていればよい。また、その場合、弾性波共振器１０の波長は、弾性波伝搬方向における交差電極指１６、２６のそれぞれの繰り返しピッチλで規定すればよい。 In the present embodiment, an example in which the predetermined direction D1 is the same direction as the elastic wave propagation direction has been described. However, the present invention is not limited thereto, and the predetermined direction D1 is a direction slightly inclined with respect to the elastic wave propagation direction. Also good. For example, each of the comb- tooth bus bars 15a, 15b, 25a, 25b and the reflector bus bars 30a, 30b, 31a, 31b, 32a, 32b in the first embodiment is 0 ° or more and 10 ° or less with respect to the elastic wave propagation direction. It may be formed extending in an inclined direction. In that case, each of the crossed electrode fingers 16, 26, the offset electrode fingers 17, 27, and the reflective electrode fingers 30c, 31c, 32c may be formed so as to extend in a direction orthogonal to the elastic wave propagation direction. In this case, the wavelength of the acoustic wave resonator 10 may be defined by the repetition pitch λ of each of the cross electrode fingers 16 and 26 in the acoustic wave propagation direction.
　本発明は、共振特性の急峻性が向上した弾性波共振器、フィルタ装置、デュプレクサおよびマルチプレクサとして、携帯電話などの移動体通信機に広く利用できる。 The present invention can be widely used in mobile communication devices such as mobile phones as acoustic wave resonators, filter devices, duplexers, and multiplexers with improved resonance characteristics.
　１　　　マルチプレクサ
　２ａ、２ｂ、２ｃ、２ｄ　直列腕共振子
　３ａ、３ｂ、３ｃ　並列腕共振子
　４　　　　直列共振子
　５　　　　縦結合型弾性波フィルタ部
　６ａ、６ｂ、６ｃ　入出力端子
　７　　　　送信フィルタ（フィルタ装置）
　８　　　　受信フィルタ（フィルタ装置）
　１０、１０Ａ、１０Ｂ　弾性波共振器
　１１　　第１ＩＤＴ電極
　１１ａ　一方の櫛歯状電極
　１１ｂ　他方の櫛歯状電極
　１５ａ　一方の櫛歯バスバー
　１５ｂ　他方の櫛歯バスバー
　１６　　交差電極指
　１７　　オフセット電極指
　２２　　第２ＩＤＴ電極
　２２ａ　一方の櫛歯状電極
　２２ｂ　他方の櫛歯状電極
　２５ａ　一方の櫛歯バスバー
　２５ｂ　他方の櫛歯バスバー
　２６　　交差電極指
　２７　　オフセット電極指
　３０　　共用反射器
　３０ａ　一方の反射器バスバー
　３０ｂ　他方の反射器バスバー
　３０ｃ　反射電極指
　３１　　第１反射器
　３１ａ　一方の反射器バスバー
　３１ｂ　他方の反射器バスバー
　３１ｃ　反射電極指
　３２　　第２反射器
　３２ａ　一方の反射器バスバー
　３２ｂ　他方の反射器バスバー
　３２ｃ　反射電極指
　４１　　第１入出力配線
　４２　　第２入出力配線
　５１　　第１接続電極
　５２　　第２接続電極
　６１　　第１対向電極
　６２　　第２対向電極
　６３　　第３対向電極
　６４　　第４対向電極
　６６　　第１絶縁層
　６７　　第２絶縁層
　９０　　圧電基板
　９１　　密着層
　９２　　主電極層
　９３　　保護層
　Ｄ１　　所定方向
　Ｄ２　　直交方向
　Ｆ１、Ｆ２　弾性波素子 DESCRIPTION OF SYMBOLS 1 Multiplexer 2a, 2b, 2c, 2d Series arm resonator 3a, 3b, 3c Parallel arm resonator 4 Series resonator 5 Longitudinal coupling type | mold elastic wave filter part 6a, 6b, 6c Input / output terminal 7 Transmission filter (filter apparatus)
8 Reception filter (filter device)
10, 10A, 10B Elastic wave resonator 11 First IDT electrode 11a One comb-shaped electrode 11b The other comb-shaped electrode 15a One comb-shaped bus bar 15b The other comb-shaped bus bar 16 Cross electrode finger 17 Offset electrode finger 22 Second IDT Electrode 22a One comb-shaped electrode 22b The other comb-shaped electrode 25a One comb-shaped bus bar 25b The other comb-shaped bus bar 26 Crossed electrode finger 27 Offset electrode finger 30 Shared reflector 30a One reflector bus bar 30b The other reflector Bus bar 30c Reflective electrode finger 31 First reflector 31a One reflector bus bar 31b The other reflector bus bar 31c Reflective electrode finger 32 Second reflector 32a One reflector bus bar 32b The other reflector bus bar 32c Reflective electrode finger 41 First Input / output wiring 42 Second input / output wiring 51 First connection electrode 2 2nd connection electrode 61 1st counter electrode 62 2nd counter electrode 63 3rd counter electrode 64 4th counter electrode 66 1st insulating layer 67 2nd insulating layer 90 Piezoelectric substrate 91 Adhesion layer 92 Main electrode layer 93 Protection layer D1 Predetermined Direction D2 Orthogonal direction F1, F2 Elastic wave element

Claims (7)

  1. 　圧電基板と、
    　互いに対向する一対の櫛歯状電極を有するＩＤＴ電極であって、前記圧電基板上に設けられ、所定方向に沿って配置された第１ＩＤＴ電極および第２ＩＤＴ電極と、
    　前記圧電基板上に設けられ、前記所定方向において前記第１ＩＤＴ電極と前記第２ＩＤＴ電極との間に配置された共用反射器と、
    　前記圧電基板上に設けられ、前記所定方向において前記第１ＩＤＴ電極から見て前記共用反射器と反対側に設けられた第１反射器と、
    　前記圧電基板上に設けられ、前記所定方向において前記第２ＩＤＴ電極から見て前記共用反射器と反対側に設けられた第２反射器と
    　を備え、
    　前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれは、前記所定方向に延びて前記所定方向の直交方向に互いに対向する一方の櫛歯バスバーおよび他方の櫛歯バスバーを有し、
    　前記第１反射器および前記第２反射器のそれぞれは、前記所定方向に延びて前記直交方向に互いに対向する一方の反射器バスバーおよび他方の反射器バスバーを有し、
    　前記第１反射器の前記他方の反射器バスバーと、前記第１ＩＤＴ電極の前記他方の櫛歯バスバーとが前記所定方向に沿って配置され、互いに接続されている状態、および、前記第２ＩＤＴ電極の前記他方の櫛歯バスバーと、前記第２反射器の前記他方の反射器バスバーとが前記所定方向に沿って配置され、互いに接続されている状態のうちの少なくとも一方の状態を有する
    　弾性波共振器。     A piezoelectric substrate;
    An IDT electrode having a pair of comb-like electrodes facing each other, the first IDT electrode and the second IDT electrode provided on the piezoelectric substrate and arranged along a predetermined direction;
    A shared reflector provided on the piezoelectric substrate and disposed between the first IDT electrode and the second IDT electrode in the predetermined direction;
    A first reflector provided on the piezoelectric substrate and provided on a side opposite to the shared reflector as viewed from the first IDT electrode in the predetermined direction;
    A second reflector provided on the piezoelectric substrate and provided on the opposite side of the shared reflector as viewed from the second IDT electrode in the predetermined direction;
    Each of the first IDT electrode and the second IDT electrode has one comb-shaped bus bar and the other comb-shaped bus bar that extend in the predetermined direction and face each other in a direction orthogonal to the predetermined direction,
    Each of the first reflector and the second reflector has one reflector bus bar and the other reflector bus bar extending in the predetermined direction and facing each other in the orthogonal direction,
    A state in which the other reflector bus bar of the first reflector and the other comb-tooth bus bar of the first IDT electrode are arranged along the predetermined direction and connected to each other; and the second IDT electrode The other comb-tooth bus bar and the other reflector bus bar of the second reflector are arranged along the predetermined direction and have at least one state of being connected to each other. .
  2. 　前記第１反射器の前記他方の反射器バスバーと、前記第１ＩＤＴ電極の前記他方の櫛歯バスバーとは、当該他方の反射器バスバーと当該他方の櫛歯バスバーとの間に位置する第１接続電極を介して接続され、
    　前記第２ＩＤＴ電極の前記他方の櫛歯バスバーと、前記第２反射器の前記他方の反射器バスバーとは、当該他方の櫛歯バスバーと当該他方の反射器バスバーとの間に位置する第２接続電極を介して接続されている
    　請求項１に記載の弾性波共振器。     The other reflector bus bar of the first reflector and the other comb-shaped bus bar of the first IDT electrode are located between the other reflector bus bar and the other comb-shaped bus bar. Connected through electrodes,
    The other comb-tooth bus bar of the second IDT electrode and the other reflector bus bar of the second reflector are located between the other comb-tooth bus bar and the other reflector bus bar. The elastic wave resonator according to claim 1, wherein the elastic wave resonators are connected via electrodes.
  3. 　前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれの前記一方の櫛歯バスバーに第１入出力配線が接続され、
    　前記第１ＩＤＴ電極および前記第２ＩＤＴ電極のそれぞれの前記他方の櫛歯バスバーに第２入出力配線が接続され、
    　前記第１入出力配線と前記第２入出力配線とを結ぶ経路において、前記第１ＩＤＴ電極と前記第２ＩＤＴ電極とは並列接続されている
    　請求項２に記載の弾性波共振器。     A first input / output wiring is connected to the one comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode;
    A second input / output wiring is connected to the other comb-tooth bus bar of each of the first IDT electrode and the second IDT electrode;
    The acoustic wave resonator according to claim 2, wherein the first IDT electrode and the second IDT electrode are connected in parallel in a path connecting the first input / output wiring and the second input / output wiring.
  4. 　さらに、
    　前記直交方向において、前記第１反射器の前記一方の反射器バスバーから見て前記他方の反射器バスバーと反対側に、当該一方の反射器バスバーと対向する第１対向電極が設けられ、前記第１対向電極はグランドに接続されている状態、および、前記直交方向において、前記第２反射器の前記一方の反射器バスバーから見て前記他方の反射器バスバーと反対側に、当該一方の反射器バスバーと対向する第２対向電極が設けられ、前記第２対向電極は、グランドに接続されている状態のうちの少なくとも一方の状態を有する
    　請求項１～３のいずれか１項に記載の弾性波共振器。     further,
    In the orthogonal direction, a first counter electrode facing the one reflector bus bar is provided on the side opposite to the other reflector bus bar when viewed from the one reflector bus bar of the first reflector. One counter electrode is connected to the ground, and in the orthogonal direction, the one reflector is located on the opposite side of the second reflector bus bar as viewed from the one reflector bus bar of the second reflector. The elastic wave according to any one of claims 1 to 3, wherein a second counter electrode facing the bus bar is provided, and the second counter electrode has at least one state of being connected to the ground. Resonator.
  5. 　さらに、
    　前記第１反射器の前記一方の反射器バスバー上に第１絶縁層が設けられ、前記第１絶縁層上に当該一方の反射器バスバーと対向する第３対向電極が設けられ、前記第３対向電極は、前記第１ＩＤＴ電極の前記一方の櫛歯バスバーに接続されている状態、および、前記第２反射器の前記一方の反射器バスバー上に第２絶縁層が設けられ、前記第２絶縁層上に当該一方の反射器バスバーと対向する第４対向電極が設けられ、前記第４対向電極は、前記第２ＩＤＴ電極の前記一方の櫛歯バスバーに接続されている状態のうちの少なくとも一方の状態を有する
    　請求項１～４のいずれか１項に記載の弾性波共振器。     further,
    A first insulating layer is provided on the one reflector bus bar of the first reflector, a third counter electrode facing the one reflector bus bar is provided on the first insulating layer, and the third counter electrode is provided. The electrode is connected to the one comb-tooth busbar of the first IDT electrode, and a second insulating layer is provided on the one reflector busbar of the second reflector, and the second insulating layer A fourth counter electrode facing the one reflector bus bar is provided above, and the fourth counter electrode is at least one of the states connected to the one comb-shaped bus bar of the second IDT electrode The elastic wave resonator according to any one of claims 1 to 4, comprising:
  6. 　１または複数の直列腕共振子、および、１または複数の並列腕共振子によって構成されるラダー型のフィルタ装置であって、
    　前記直列腕共振子および前記並列腕共振子の少なくとも１つは、請求項１～５のいずれか１項に記載の弾性波共振器を含む
    　フィルタ装置。     A ladder-type filter device including one or more series arm resonators and one or more parallel arm resonators,
    6. The filter device including at least one of the series arm resonator and the parallel arm resonator including the acoustic wave resonator according to claim 1.
  7. 　請求項６に記載のフィルタ装置を含む
    　マルチプレクサ。     A multiplexer comprising the filter device according to claim 6.
PCT/JP2017/045402 2016-12-19 2017-12-18 Acoustic wave resonator, filter device, and multiplexer WO2018117060A1 (en)

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WO2022070885A1 (en) * 2020-09-29 2022-04-07 株式会社村田製作所 Vertically coupled resonator-type elastic wave filter and elastic wave filter

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WO2020100744A1 (en) * 2018-11-16 2020-05-22 株式会社村田製作所 Elastic wave device
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