WO2018110577A1

WO2018110577A1 - High frequency module and communication device

Info

Publication number: WO2018110577A1
Application number: PCT/JP2017/044633
Authority: WO
Inventors: 輝道喜多
Original assignee: 株式会社村田製作所
Priority date: 2016-12-16
Filing date: 2017-12-12
Publication date: 2018-06-21

Abstract

This high frequency module (1) is provided with: a filter (20); a switch IC (10) which comprises a semiconductor substrate (12), a switch (SW1) that is provided on the semiconductor substrate (12), and an inductor (L1) that is provided on the semiconductor substrate (12) and is connected to the switch (SW1) and the filter (20); an inductor (L2) which is connected to the filter (20); and a substrate (30) on which the switch IC (10), the filter (20) and the inductor (L2) are provided. A circuit element that constitutes the filter (20) is connected between the inductor (L1) and the inductor (L2); and the inductor (L1) and the inductor (L2) are electromagnetically coupled to each other.

Description

High frequency module and communication device

The present invention relates to a high-frequency module and a communication device.

2. Description of the Related Art Conventionally, a high-frequency device has a filter, a front-stage inductor that is a matching circuit connected to the front stage of the filter, and a rear-stage inductor that is a matching circuit connected to the rear stage of the filter, and the front-stage inductor and the rear-stage inductor are electromagnetically coupled. A module is known (for example, Patent Document 1). With such a configuration, a coupling path by electromagnetic coupling is formed separately from the main path that passes through the filter. The unwanted wave signal flowing through the main path at the connection point between the main path and the coupling path can be obtained by causing the unwanted wave suppression signal having the opposite phase to the unwanted wave signal flowing through the main path to flow through the coupling path. It is canceled out by the unwanted wave suppression signal flowing through the coupling path. Thereby, the attenuation characteristic outside the pass band of the filter can be improved.

International Publication No. 2015/019794

In recent years, further miniaturization of high-frequency modules has been demanded as components are mounted with high density. However, the conventional high-frequency module has a problem that it is difficult to reduce the size (reducing the height) of the high-frequency module because wirings constituting the inductor are arranged in multiple layers in the substrate included in the high-frequency module. It was.

Therefore, an object of the present invention is to provide a high-frequency module and a communication device that can realize downsizing while improving attenuation characteristics outside the passband.

In order to achieve the above object, a high-frequency module according to one embodiment of the present invention includes a filter, a semiconductor substrate, a switch provided in the semiconductor substrate, a switch provided in the semiconductor substrate, and connected to the switch and the filter A switch IC having a first inductor, a second inductor connected to the filter, and a substrate on which the switch IC, the filter and the second inductor are provided, the first inductor and the A circuit element constituting the filter is connected between the second inductor and the first inductor and the second inductor are electromagnetically coupled.

As a result, a coupling path by electromagnetic coupling between the first inductor and the second inductor is formed separately from the main path passing through the filter, and the unwanted wave suppression signal having an opposite phase to the unwanted wave signal outside the passband flowing through the main path. By flowing through the coupling path, the unnecessary wave signal flowing through the main path at the connection point between the main path and the coupling path can be canceled by the unnecessary wave suppression signal flowing through the coupling path. Therefore, attenuation characteristics outside the pass band of the filter can be improved. Further, since the first inductor is not arranged as a wiring over multiple layers in the substrate or mounted on the surface of the substrate and is provided on the semiconductor substrate constituting the switch IC, the high-frequency module can be reduced in size. In this way, it is possible to reduce the size of the high-frequency module while improving the attenuation characteristics outside the passband.

The first inductor may be provided on an electrode forming surface of the semiconductor substrate.

The semiconductor substrate is provided with an electrode forming surface on which electrodes for connecting to other components (for example, a filter or the like) are formed. Therefore, by providing the first inductor using the pattern for forming the electrode on the electrode formation surface of the switch IC, the first inductor can be provided in the switch IC while maintaining the size of the switch IC. Therefore, the high-frequency module can be reduced in size (reduced in height).

Further, the first inductor and the second inductor may overlap in a plan view of the substrate.

Thereby, the first inductor and the second inductor overlap with each other in plan view of the substrate, so that the coupling degree of the electromagnetic coupling between the first inductor and the second inductor can be increased.

Further, the second inductor may be constituted by a coil pattern.

This makes it possible to realize not only inductive coupling but also capacitive coupling between coil patterns as electromagnetic coupling.

Further, the second inductor may be a mounted component.

Thereby, since a mounting component having a high Q value can be used as the second inductor, the insertion loss in the pass band of the filter and the attenuation in the attenuation band can be improved. In addition, since the second inductor can be selected and used from a plurality of mounted components having different coil winding directions, the coupling degree of electromagnetic coupling can be easily adjusted.

In addition, a ground pattern is provided on the substrate so as to partially overlap the first inductor and the second inductor between the first inductor and the second inductor in a plan view of the substrate. Also good.

Thereby, in the plan view of the substrate, the coupling degree of the electromagnetic coupling between the first inductor and the second inductor can be easily adjusted by adjusting the amount of overlap between the first inductor and the second inductor and the ground pattern. Can do.

The switch IC may be built in the substrate.

Thereby, since the switch IC is built in the substrate, the high-frequency module can be further downsized.

Further, the second inductor may be built in the substrate.

Thereby, since the second inductor is built in the substrate, the surface mounting area of the substrate can be further reduced, and the high-frequency module can be further downsized.

In addition, a communication device according to one embodiment of the present invention includes an RF signal processing circuit that processes a high-frequency signal transmitted and received by an antenna element, and the high-frequency signal that is transmitted between the antenna element and the RF signal processing circuit. And a high-frequency module.

According to this, it is possible to provide a communication device that can realize downsizing while improving attenuation characteristics outside the passband.

The high-frequency module and the communication device according to the present invention can achieve downsizing while improving the attenuation characteristics outside the passband.

FIG. 1 is a circuit configuration diagram of the high-frequency module according to the first embodiment. FIG. 2 is a circuit configuration diagram of the filter according to the first embodiment. FIG. 3 is a cross-sectional view of the high-frequency module according to Embodiment 1. FIG. 4 is a cross-sectional view of a high-frequency module according to a modification of the first embodiment. FIG. 5 is a cross-sectional view of the high-frequency module according to the second embodiment. FIG. 6 is a cross-sectional view of the high-frequency module according to Embodiment 3. FIG. 7 is a configuration diagram of a communication apparatus according to the fourth embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to examples and drawings. It should be noted that each of the embodiments described below shows a comprehensive or specific example. The numerical values, shapes, materials, constituent elements, arrangement of constituent elements, connection forms, and the like shown in the following embodiments are merely examples, and are not intended to limit the present invention. Among the constituent elements in the following embodiments, constituent elements not described in the independent claims are described as optional constituent elements. Also, the size of the components shown in the drawings is not necessarily exact. Moreover, in each figure, the same code | symbol is attached | subjected to the substantially same structure, The overlapping description may be abbreviate | omitted or simplified.

(Embodiment 1)
[1. Circuit configuration of high-frequency module]
FIG. 1 is a circuit configuration diagram of a high-frequency module 1 according to the first embodiment.

The high frequency module 1 is, for example, a module disposed in the front end portion of a multi-mode / multi-band mobile phone. The high-frequency module 1 is incorporated in a multi-band mobile phone that complies with a communication standard such as LTE (Long Term Evolution).

The high-frequency module 1 has, for example, an input / output terminal 11m and an input / output terminal 11n, the input / output terminal 11m is connected to an antenna element, and the input / output terminal 11n is another component (for example, another different from a switch IC 10 described later). It is connected to an RF signal processing circuit (RFIC) via a switch IC or an amplifier circuit. The high frequency module 1 transmits a high frequency signal between the antenna element and the RF signal processing circuit.

As shown in FIG. 1, the high-frequency module 1 includes a switch IC 10, a filter 20, and inductors L1 and L2.

The switch IC 10 includes a semiconductor substrate 12, a switch SW1 provided on the semiconductor substrate 12, and an inductor L1 provided on the semiconductor substrate 12 and connected to the switch SW1 and the filter 20. The semiconductor substrate 12 will be described later with reference to FIG. In the switch IC 10, switching between conduction and non-conduction of the switch SW <b> 1 is switched so that passage and blocking of the high-frequency signal between the input / output terminal 11 m and the input / output terminal 11 n are switched. For example, conduction and non-conduction of the switch SW1 are switched by a control signal from a control unit (not shown) included in the high-frequency module 1 or an RF signal processing circuit. The switch SW1 is, for example, a FET (Field Effect Transistor) switch made of GaAs or CMOS (Complementary Metal Oxide Semiconductor), a diode switch, or the like.

The filter 20 is, for example, a bandpass filter that passes a signal in a predetermined frequency band. The filter 20 is a filter configured by a circuit element such as a surface acoustic wave (SAW: Surface Acoustic Wave) resonator, a bulk acoustic wave (BAW: Bulk Acoustic Wave) resonator, or an FBAR (Film Bulk Acoustic Resonator). In the case of a SAW filter constituted by SAW resonators, the filter 20 includes a substrate and an IDT (InterDigital Transducer) electrode. The substrate is a substrate having piezoelectricity at least on the surface. The substrate may include, for example, a piezoelectric thin film on the surface, and a laminated body such as a film having a sound speed different from that of the piezoelectric thin film and a supporting substrate. The substrate includes, for example, a laminate including a high sound speed support substrate and a piezoelectric thin film formed on the high sound speed support substrate, a high sound speed support substrate, a low sound speed film formed on the high sound speed support substrate, A laminate including a piezoelectric thin film formed on a sonic film, or a support substrate, a high sonic film formed on the support substrate, a low sonic film formed on the high sonic film, and a low sonic film It may be a laminate including a piezoelectric thin film formed on the substrate. Moreover, the board | substrate may have piezoelectricity in the whole board | substrate. In this case, the substrate is a piezoelectric substrate composed of one piezoelectric layer. The filter 20 may be an LC resonance circuit configured by circuit elements such as an inductor and a capacitor. Here, it is assumed that the filter 20 is a SAW filter. Accordingly, as described above, the filter 20 can be configured by the IDT electrode formed on the piezoelectric substrate, and thus a small and low-profile filter having a high steep passage characteristic can be realized. A specific circuit configuration of the filter 20 will be described later with reference to FIG.

The inductor L1 is a first inductor connected to the switch SW1 and the filter 20. Specifically, the inductor L1 is connected between the connection point x1 between the switch SW1 and the filter 20 and the ground. The inductor L1 is a matching circuit for matching the switch IC 10 (switch SW1) and the filter 20, for example. The inductor L1 may be connected to the filter 20 through other components. Further, the inductor L1 may be connected in series between the switch SW1 and the filter 20.

The inductor L2 is a second inductor connected to the filter 20. Specifically, the inductor L2 is connected between the connection point x2 between the filter 20 and the input / output terminal 11n and the ground. The inductor L2 is a matching circuit for matching the filter 20 with a component (for example, another switch IC or an amplifier circuit) connected to the input / output terminal 11n. The inductor L2 may be connected in series between the filter 20 and the input / output terminal 11n.

The inductor L1 and the inductor L2 are electromagnetically coupled (inductive coupling or capacitive coupling). Since the inductor L1 and the inductor L2 are electromagnetically coupled, a path from the connection point x1 to the connection point x2 via the inductor L1 and the inductor L2 is formed. This route is called a combined path. On the other hand, a route from the connection point x1 through the filter 20 to the connection point x2 is called a main path. By adjusting the coupling degree of the electromagnetic coupling between the inductor L1 and the inductor L2, an unnecessary wave suppression signal having a phase opposite to that of the unnecessary wave signal outside the passband flowing through the main path can be passed through the coupling path. That is, the unnecessary wave signal that flows through the main path at the connection point x2 between the main path and the coupling path can be canceled by the unnecessary wave suppression signal that flows through the coupling path.

Next, the circuit configuration of the filter 20 will be described with reference to FIG.

FIG. 2 is a circuit configuration diagram of the filter 20 according to the first embodiment.

The filter 20 includes, for example, the series arm resonators s1 to s3 and the parallel arm resonators p1 and p2 as the circuit elements described above, and has a ladder type filter structure as shown in FIG. Filter characteristics can be realized. In the present embodiment, circuit elements constituting the filter 20 are connected between the inductor L1 and the inductor L2. Specifically, series arm resonators s1 to s3 constituting the filter 20 are connected between the inductor L1 and the inductor L2. The inductor L2 is connected between the connection point x2 (connection point between the series arm resonator s3 and the input / output terminal 11n) and the ground, but is connected between the parallel arm resonator p1 or p2 and the ground. May be. For example, when the inductor L2 is connected between the parallel arm resonator p1 and the ground, the series arm resonator s1 and the parallel arm resonator p1 are used as circuit elements constituting the filter 20 between the inductor L1 and the inductor L2. Connected. In other words, the inductor L2 is connected to a parallel arm such as the parallel arm resonator p1 or p2 in addition to the case where the inductor L2 is connected to the connection point x2 (series arm connected to the input / output terminal 11n) as shown in FIG. May be.

[2. Structure of high frequency module]
Next, the structure of the high frequency module 1 will be described with reference to FIG.

FIG. 3 is a cross-sectional view of the high-frequency module 1 according to the first embodiment.

The high-frequency module 1 includes a substrate 30 provided with a switch IC 10, a filter 20, and an inductor L2.

The switch IC 10 and the inductor L2 are built in the substrate 30, for example. Thereby, the surface mounting area of the board | substrate 30 can be reduced more, and the high frequency module 1 can be reduced in size. The substrate 30 is a multilayer substrate such as a printed circuit board or a LTCC (Low Temperature Co-fired Ceramics) substrate. When the switch IC 10 is built in the substrate 30, the substrate 30 may be a printed board that can be easily processed for incorporating the switch IC 10 or the like. The filter 20 is surface-mounted on the substrate 30. The filter 20 may be protected by resin sealing. The filter 20 may be built in the substrate 30.

The inductor L1 is provided on the semiconductor substrate 12 constituting the switch IC10. The semiconductor substrate 12 is, for example, a semiconductor chip or a printed board. The shape of the semiconductor substrate 12 is not limited to a plate shape, but may be a cube, a shape that is not a rectangular parallelepiped (circular or other shape), or the like. A pattern for forming the electrodes is used on an electrode forming surface on which electrodes such as bumps for connecting to other components (for example, the filter 20) are formed on one main surface of the semiconductor substrate 12 constituting the switch IC 10. An inductor L1 is provided. For example, the inductor L1 includes a coil pattern provided on the electrode formation surface.

The inductor L2 is configured by, for example, a coil pattern provided in the inner layer of the substrate 30. As a result, not only inductive coupling but also capacitive coupling between coil patterns can be realized as electromagnetic coupling. FIG. 3 schematically shows the inductors L1 and L2 with horizontal lines. For example, the inductors L1 and L2 are spirally formed on the electrode formation surface and on the inner layer or surface of the substrate 30 in a plan view of the substrate 30. Is formed. 3 shows a coil pattern provided on the inner layer of the substrate 30 as the inductor L2, the inductor L2 may be a coil pattern provided on the surface of the substrate 30.

Further, the inductor L1 and the inductor L2 overlap in a plan view of the substrate 30. The fact that the inductor L1 and the inductor L2 overlap in plan view of the substrate 30 is intended not only that one of the inductors L1 and L2 completely overlaps the other, but also that a part of the inductor L1 and a part of the inductor L2 overlap. To do. Thereby, the coupling degree of the electromagnetic field coupling between the inductor L1 and the inductor L2 can be increased.

For example, the degree of coupling of the electromagnetic field coupling is adjusted by adjusting the amount of the inductor L1 and the inductor L2 that overlap in the plan view of the substrate 30 and the distance between the inductor L1 and the inductor L2 in the thickness direction of the substrate 30. be able to. Note that the degree of coupling of electromagnetic field coupling may be adjusted by the method described in FIG.

FIG. 4 is a cross-sectional view of a high-frequency module 1a according to a modification of the first embodiment. In the high-frequency module 1a, a ground pattern is provided on the substrate 30 so as to partially overlap the inductors L1 and L2 between the inductor L1 and the inductor L2 in a plan view of the substrate 30. For example, the degree of coupling increases as the amount of overlap between the inductors L1 and L2 and the ground pattern decreases, and the degree of coupling decreases as the amount of overlap increases. Therefore, by adjusting the amount of overlap between the inductors L1 and L2 and the ground pattern in the plan view of the substrate 30, the amount of overlap between the inductor L1 and the inductor L2 in the plan view of the substrate 30 or the substrate of the inductor L1 and the inductor L2 is adjusted. Even if the distance in the thickness direction of 30 is not adjusted, the coupling degree of the electromagnetic coupling between the inductor L1 and the inductor L2 can be easily adjusted.

[3. Effect]
As described above, in the high-frequency module 1 according to the first embodiment, in addition to the main path that passes through the filter 20, a coupling path by electromagnetic coupling between the inductor L1 and the inductor L2 is formed, and the passband that flows through the main path An unnecessary wave signal that flows through the main path at the connection point x2 between the main path and the coupling path is converted into an unnecessary wave that flows through the coupling path by allowing the unnecessary wave suppression signal having the opposite phase to the unnecessary wave signal to flow through the coupling path. It can be canceled out by the suppression signal. For example, by adjusting the coupling degree of the electromagnetic coupling between the inductor L1 and the inductor L2, the phase characteristic of the signal flowing through the coupling path can be adjusted, and the unwanted wave suppression signal is a signal having a phase opposite to that of the unwanted wave signal. Can be. Therefore, attenuation characteristics outside the passband of the filter 20 can be improved. Further, the inductor L1 is arranged as a wiring over the layers in the substrate 30 and is not mounted on the surface of the substrate 30, and is provided on the semiconductor substrate 12 (for example, a semiconductor chip) constituting the switch IC 10. The high frequency module 1 can be reduced in size. In this way, it is possible to reduce the size of the high-frequency module while improving the attenuation characteristics outside the passband.

Further, for example, the input / output terminal 11m is shared with the input / output terminal of another high-frequency module (filter) that passes a signal in a frequency band different from the pass band of the filter 20, so that the high-frequency module 1 and the other A multiplexer such as a duplexer is configured with the high-frequency module. Therefore, when the multiplexer is configured, the isolation characteristic between the high-frequency module 1 and another high-frequency module can be improved by improving the attenuation characteristic outside the passband of the filter 20.

In addition, the semiconductor substrate 12 is provided with an electrode forming surface on which electrodes for connecting to other components (for example, the filter 20 and the like) are formed. Therefore, by providing the inductor L1 using the pattern for forming the electrode on the electrode formation surface of the switch IC 10, the inductor L1 can be provided in the switch IC 10 while maintaining the size of the switch IC 10. Therefore, the high frequency module 1 can be reduced in size (reduced in height).

(Embodiment 2)
In the second embodiment, the switch IC 10 is surface-mounted on the substrate 30.

FIG. 5 is a cross-sectional view of the high-frequency module 2 according to the second embodiment. As shown in FIG. 5, the switch IC 10 is surface-mounted on the substrate 30 by connecting bumps on the electrode forming surface of the switch IC 10 to one main surface of the substrate 30. Also in the present embodiment, the inductor L1 is provided on the electrode formation surface.

Further, an electrode 50 is provided on the one main surface of the substrate 30 of the high-frequency module 2. The electrode 50 may be a copper pillar, an electrode such as plating or copper paste, or solder. The high frequency module 2 is mounted on a mother board (not shown), for example, and receives a high frequency signal from the mother board via the electrode 50. Further, the switch IC 10 is protected by resin sealing with the resin 40, and the reliability can be improved. In FIG. 5, the entire one main surface of the substrate 30 is covered with the resin 40, but only the switch IC 10 may be sealed with a resin such as an underfill, for example. Furthermore, a shield electrode may be formed on the resin 40. Thereby, the penetration | invasion of the external noise to the high frequency module 2 can be suppressed, or the spreading | diffusion of the noise radiated | emitted from the high frequency module 2 can be suppressed. Since the other functions of the high frequency module 2 are the same as those of the high frequency module 1, the description thereof is omitted.

(Embodiment 3)
In the third embodiment, the inductor L2 is a mounted component.

FIG. 6 is a cross-sectional view of the high-frequency module 3 according to the third embodiment. As shown in FIG. 6, the inductor L <b> 2 is a mounting component (chip inductor) that is surface-mounted on the substrate 30. The inductor L2 as a mounting component has a high Q value, and can improve the insertion loss in the pass band of the filter 20 to which the inductor L2 having the high Q value is connected and the attenuation in the attenuation band. The filter 20 and the inductor L2 may be protected by resin sealing. Further, the inductor L1 and the inductor L2 (chip inductor) overlap in the plan view of the substrate 30. Further, since the inductor L2 can be selected and used from a plurality of mounted components having different coil winding directions, the coupling degree of electromagnetic coupling can be easily adjusted. The other functions of the high-frequency module 3 are the same as those of the high-frequency module 1, and thus the description thereof is omitted.

(Embodiment 4)
The high frequency module of the present invention can be applied to a communication device.

FIG. 7 is a configuration diagram of the communication apparatus 100 according to the fourth embodiment. FIG. 7 shows the high-frequency module 4, the antenna element ANT, and the RF signal processing circuit (RFIC) 70. The high frequency module 4 and the RFIC 70 constitute a communication device 100. The antenna element ANT, the high-frequency module 4, and the RFIC 70 are disposed, for example, in a front end portion of a mobile phone that supports multimode / multiband.

The antenna element ANT is a multiband antenna that transmits and receives a high-frequency signal and conforms to a communication standard such as LTE. The antenna element ANT may be built in the communication device 100.

The high frequency module 4 is a circuit that transmits a high frequency signal between the antenna element ANT and the RFIC 70. Specifically, the high frequency module 4 transmits a high frequency signal received by the antenna element ANT to the RFIC 70 via the reception side signal path. The high-frequency module 4 includes switch ICs 10a to 10d, filters 20a to 20e, inductors (first inductors) L1a to L1e, inductors (second inductors) L2a to L2e, inductors L3a to L3d, and

amplifier circuits

60a and 60b.

The switch IC 10a includes a switch SW1a including a common terminal and a plurality of selection terminals that are selectively connected to the common terminal. The common terminal is connected to the antenna element ANT, and the plurality of selection terminals are connected to the filters 20a to 20e, respectively. The switch SW1a is a switch that divides the high-frequency signal received by the antenna element ANT into paths for the filters 20a to 20e.

Each of the filters 20a to 20e is, for example, a band-pass filter that passes signals in different frequency bands.

The inductors L1a to L1e are first inductors connected to the switch IC 10a between the switch IC 10a and the filters 20a to 20e, respectively. The inductors L1a to L1e are, for example, matching circuits for matching the switch IC 10a and the filters 20a to 20e. The inductors L1a to L1e are provided in the switch IC 10a. For example, the inductors L1a to L1e are provided on the switch IC 10a or built in the switch IC 10a.

The inductors L2a to L2e are second inductors connected to the filters 20a to 20e so that circuit elements constituting the filters 20a to 20e are connected between the inductors L1a to L1e. The inductors L2a to L2e are matching circuits for matching the filters 20a to 20e and the

switch ICs

10b and 10c.

The inductor L1a and the inductor L2a are electromagnetically coupled. Similarly, inductors L1b and L2b, inductors L1c and L2c, inductors L1d and L2d, and inductors L1e and L2e are electromagnetically coupled, respectively. As a result, a main path passing through each filter and a coupling path passing through each set of inductors that are electromagnetically coupled are formed. Then, by causing the unwanted wave suppression signal out of the passband flowing through the main path to flow in the coupling path, the unwanted wave signal flowing in the main path is converted into the unwanted wave suppression signal flowing in the coupling path by the unwanted wave suppression signal flowing in the coupling path. Can be offset. Therefore, the attenuation characteristics outside the passband of each filter can be improved, and the isolation characteristics between the main paths can be improved.

The

switch ICs

10b and 10c have a switch composed of a common terminal and a plurality of selection terminals selectively connected to the common terminal. A common terminal included in the switch IC 10b is connected to the inductor L3a, and a plurality of selection terminals included in the switch IC 10b are connected to the

filters

20a and 20b, respectively. A common terminal included in the switch IC 10c is connected to the inductor L3c, and a plurality of selection terminals included in the switch IC 10c are connected to the filters 20c to 20e. The switches included in the

switch ICs

10b and 10c are switches that group paths for the filters 20a to 20e.

The inductors L3a and L3b are matching circuits for matching the switch IC 10b and the amplifier circuit 60a. Similarly, the inductors L3c and L3d are matching circuits for matching the switch IC 10c and the amplifier circuit 60b.

Amplifying

circuits

60a and 60b are circuits that amplify high-frequency signals propagating through the paths integrated by the

switch ICs

10b and 10c. The

amplifier circuits

60a and 60b are, for example, low noise amplifiers that amplify a high frequency received signal. The

amplifier circuits

60a and 60b are not limited to low noise amplifiers, and may be power amplifiers that amplify high-frequency transmission signals, for example. The

amplifier circuits

60a and 60b may be incorporated in any of the switch ICs 10a to 10d.

The switch IC 10d includes a switch including a common terminal and a plurality of selection terminals that are selectively connected to the common terminal. The common terminal is connected to the RFIC 70, and the plurality of selection terminals are connected to the

amplifier circuits

60a and 60b, respectively. The switch included in the switch IC 10d is a switch that combines a plurality of paths through which the high-frequency signals amplified by the

amplifier circuits

60a and 60b propagate into paths connected to terminals for acquiring the high-frequency signals included in the RFIC 70.

The RFIC 70 is an RF signal processing circuit that processes high-frequency signals transmitted and received by the antenna element ANT. Specifically, the RFIC 70 performs signal processing on the high-frequency signal input from the antenna element ANT via the reception-side signal path of the high-frequency module 4 by down-conversion or the like, and based on the reception signal generated by the signal processing Output to a band signal processing circuit (not shown).

As with the high frequency module 1, the high frequency module 4 can improve the attenuation characteristics outside the passband, and can be reduced in size because the inductors L1a to L1e are provided in the switch IC 10a. Therefore, it is possible to provide a communication device that can achieve downsizing while improving attenuation characteristics outside the passband.

The communication device 100 includes the high frequency module 4, but may include the

high frequency module

1, 1a, 2 or 3.

(Other embodiments)
As described above, the high-frequency module and the communication device according to the embodiment of the present invention have been described with reference to the first to fourth embodiments. However, the present invention is not limited to the above-described embodiment. Another embodiment realized by combining arbitrary constituent elements in the above-described embodiment, and modifications obtained by applying various modifications conceivable by those skilled in the art to the above-described embodiment without departing from the gist of the present invention. Examples are also included in the present invention.

The present invention can be widely used in communication devices such as mobile phones as small high-frequency modules and communication devices applicable to multiband systems.

1, 1a, 2, 3, 4 High-

frequency module

10, 10a-10d Switch IC
11m, 11n I / O terminal 12

Semiconductor substrate

20, 20a to 20e Filter 30 Substrate 40 Resin 50

Electrode

60a, 60b Amplifier circuit 70 RF signal processing circuit (RFIC)
100 Communication device SW1, SW1a Switch L1, L1a to L1e Inductor (first inductor)
L2, L2a to L2e Inductor (second inductor)
L3a to L3d Inductors s1 to s3 Series arm resonator p1, p2 Parallel arm resonator x1, x2 Connection point ANT Antenna element

Claims

Filters,
A switch IC having a semiconductor substrate, a switch provided on the semiconductor substrate, and a first inductor provided on the semiconductor substrate and connected to the switch and the filter;
A second inductor connected to the filter;
A board provided with the switch IC, the filter, and the second inductor,
A circuit element constituting the filter is connected between the first inductor and the second inductor;
The first inductor and the second inductor are electromagnetically coupled to each other.
The high-frequency module according to claim 1, wherein the first inductor is provided on an electrode formation surface of the semiconductor substrate.
The high-frequency module according to claim 1, wherein the first inductor and the second inductor overlap in a plan view of the substrate.
The high-frequency module according to any one of claims 1 to 3, wherein the second inductor includes a coil pattern.
The high-frequency module according to any one of claims 1 to 3, wherein the second inductor is a mounting component.
The ground pattern is provided on the substrate so as to partially overlap the first inductor and the second inductor between the first inductor and the second inductor in a plan view of the substrate. 6. The high frequency module according to any one of 1 to 5.
The high-frequency module according to any one of claims 1 to 6, wherein the switch IC is built in the substrate.
The high-frequency module according to any one of claims 1 to 7, wherein the second inductor is built in the substrate.
An RF signal processing circuit for processing a high-frequency signal transmitted and received by the antenna element;
A high-frequency module according to any one of claims 1 to 8, wherein the high-frequency signal is transmitted between the antenna element and the RF signal processing circuit.