WO2018104177A1 - Convertisseur à haut rendement pour systèmes triphasés - Google Patents

Convertisseur à haut rendement pour systèmes triphasés Download PDF

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Publication number
WO2018104177A1
WO2018104177A1 PCT/EP2017/081220 EP2017081220W WO2018104177A1 WO 2018104177 A1 WO2018104177 A1 WO 2018104177A1 EP 2017081220 W EP2017081220 W EP 2017081220W WO 2018104177 A1 WO2018104177 A1 WO 2018104177A1
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WO
WIPO (PCT)
Prior art keywords
circuit
filter
circuits
arm
power semiconductors
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PCT/EP2017/081220
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German (de)
English (en)
Inventor
Marvin TANNHÄUSER
Original Assignee
Siemens Aktiengesellschaft
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Publication of WO2018104177A1 publication Critical patent/WO2018104177A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters

Definitions

  • the invention relates to a circuit for a converter for three-phase systems and to a method for interconnecting a DC system with a three-phase AC system having at least one such circuit.
  • Such a circuit is used, for example, in an exchange ⁇ judge for use in photovoltaics.
  • Other areas of application for the converter for example, electric machines, generators, electric vehicles, hybrid vehicles, vehicles for rail transport and charging ⁇ pillar for electric vehicles.
  • power converters are used in energy storage applications, for example in the field of renewable energies, or in auxiliary power supplies and in power supplies.
  • a power converter is here called an arrangement for converting an electric current into another.
  • a ⁇ such power converter is preferably in the Georgiaschal ⁇ tion of a DC system, for example, with a DC voltage of 450 V, with a three-phase AC voltage system, for example with a star voltage of 230 V, used, depending on the power flow direction of the converter as an inverter or rectifier is operated.
  • An inverter is an electrical device that converts DC voltage to AC voltage.
  • a rectifier is an electrical device that converts AC voltage to DC voltage.
  • the power converter can be used here as a rectifier as well as an inverter.
  • the three-phase AC voltage system basically includes three individual AC voltages same frequency and amplitude, which are out of phase with each other by 120 ° or 240 °.
  • EP 2136465 Al is a single-phase inverter for feeding an output of a DC voltage source, in particular a photovoltaic generator, having at least two clocked in a change ⁇ pannungsnetz with an asymmetrically clocked bridge circuit with power frequency first switches and at least two at a higher clock frequency Clocked second switches known.
  • the invention has for its object to provide a power converter circuit for three-phase systems, which has improved properties relative to the EMC in comparison to the prior art.
  • the power converter circuit comprises an intermediate circuit and in parallel with the intermediate circuit Zvi ⁇ three mutually parallel arms each having a first circuit, a second circuit and a filter circuit.
  • the intermediate circuit has connection contacts for connection to a DC voltage, between which a series connection of two capacitors is arranged.
  • the DC link is designed as a split DC link and used to establish a center point of a DC link chip. provided at the point located between the capacitors.
  • the first circuit of each arm comprises two series cephalic- in preparing first half bridges, wherein the potential points between the capacitors of the intermediate circuit as well as between the ers ⁇ th half bridges each arm are connected to each other.
  • the filter circuit of each arm comprises first terminals, between which a series of a first filter inductance, a filter capacitor and a second filter inductance is connected, wherein the first terminals are connected to the center ⁇ points of the two first half-bridges of the respective arm ,
  • the filter circuit of each arm further includes second terminals at the points between the filter capacitor and the first and between the filter capacitor and the second filter inductor.
  • the second circuit of each arm has a second half-bridge whose center forms an AC output for each phase associated with the arm.
  • the outer potential points of the second half-bridge of each arm are connected to the second terminals of the filter circuit of the arm.
  • the power converter circuit and the method of the invention are preferably used in network applications, for example photovoltaics and energy storage applications, as well as in electric vehicles, hybrid vehicles and vehicles for rail traffic. Further areas of application are auxiliary power supplies and power supplies.
  • the invention provides a power converter circuit with a natively sinusoidal three-phase output voltage. It is also advantageous that such a power converter circuit is readily suitable for parallel connection with other, for example, similar power converter circuits. As a result, the achievable with the circuit power ⁇ range - while maintaining the components used - significantly extended.
  • the region of the circuit in which a pulse-width-modulated voltage occurs with high-frequency voltage changes is narrowly limited.
  • Pulse width modulated voltage occurs only in the Leitererberei ⁇ Chen between the filter inductors and the directly connected switches of the first half-bridges.
  • the area of the circuit with high EMC radiation due to the placement of the internal filter is advantageously narrowly limited to two short conductor pieces per phase.
  • These can be well provided with a shield, for example by being arranged in a multi-layer board in a middle layer between shielding metal surfaces.
  • the switches of the second circuit are not in the range of high switching frequencies. Rather, the voltage is smoothed by the filter circuit even before the switches of the second circuit. This reduces the burden of
  • the circuit can be bi-directional by the circuit topology according to the invention, that is, depending on the power flow as
  • Rectifier and / or as an inverter operated.
  • the two series-connected capacitors of the intermediate circuit may also consist of several, at ⁇ play, made in series or parallel connected condensers ⁇ ren respectively. This may be necessary if there is no capacitor specified for the required current and / or voltage.
  • the capacitors can have the same capacitance values.
  • the intermediate circuit which is divided symmetrically by the use of equal capacitance values, divides the DC link voltage symmetrically about the center point. Therefore, the same power semiconductors can be used in the first half bridges, which are uniformly and optimally controlled. This increases the efficiency of the power converter circuit and reduces the complexity.
  • the first circuits may comprise power semiconductors, which are provided for a modulation of the AC voltage.
  • the second circuits may include power semiconductors intended for clocking at a lower fundamental frequency. For example, while the modulation frequency of the AC voltage is in the range of several kHz to several MHz, the fundamental frequency is 50 Hz. Since the power semiconductors for different tasks at different frequencies within the
  • the specified circuit topology allows use of adapted power semiconductors ⁇ . This is beneficial because of the Use of the power semiconductor adapted to the task increases the efficiency of the converter circuit.
  • the power semiconductors of the first circuits can be optimized with regard to low switching losses.
  • the Leis ⁇ processing semiconductor of the second circuits can be optimized for low conduction losses.
  • An essential factor for limiting the achievable efficiency lies in the losses that occur in the power semiconductors used. In this case, the switching losses that occur at the moment of opening and closing the switch and increase with the switching frequency used, as well as the forward losses, the auftre ⁇ th in the conductive state of the switch, play a role.
  • the power semiconductors such as MOSFETs, IGBTs or GaN HEMT switch with respect to the
  • Power semiconductors of the first circuits which are provided for the modulation of the AC voltage to be optimized in terms of low switching losses, while comparatively ⁇ as slow switching power semiconductors of the second circuits, which are provided for a clocking with a fundamental frequency, can be optimized in terms of low forward losses.
  • the power semiconductors of the first circuits can have a dielectric strength which corresponds to at least half the intermediate circuit voltage.
  • the power semiconductor of the second circuits may have a withstand voltage alswei ⁇ sen at least equal to around the intermediate circuit voltage.
  • the circuit topology with the ge ⁇ shared intermediate circuit which acts as a capacitive voltage divider and preferably at the same capacity, the intermediate circuit voltage to the center values symmetrically distributed.
  • the ge ⁇ shared intermediate circuit which acts as a capacitive voltage divider and preferably at the same capacity, the intermediate circuit voltage to the center values symmetrically distributed.
  • power semiconductors which have a higher dielectric strength and are therefore suitable for switching higher voltages, generate significantly higher switching losses than power semiconductors, which have a lower dielectric strength.
  • the specified circuit topology allows the power semiconductors of the first circuit to have only a voltage resistance which corresponds to half the intermediate circuit voltage. Since the adapted power semiconductors are optimally used in each case, this results in a high efficiency of the converter circuit.
  • power semiconductors of the first circuits are preferably GaN switch used. These allow very high switching speeds and therefore make it possible to reduce the size of the filter elements.
  • the power semiconductors of the first circuits can be driven with a frequency of more than 100 kHz, in particular a frequency of more than 300 kHz.
  • Switching speed makes it possible to reduce the size of the filter ⁇ elements.
  • the first capacitor and the upper first half-bridges may be formed as a first commutation cell; the second capacitor and the lower first half-bridges may be formed as a second commutation cell.
  • commutation is the process in which a current flows from one branch to the other.
  • the commutation takes place, for example, in operation as an inverter, from the first capacitor to the first half-bridges connected in parallel thereto and from the second capacitor to the second half-bridges connected in parallel thereto.
  • the formation of a commutation cell in particular by a salinduk ⁇ tive arrangement of the components is advantageous because such a very good commutation and switching behavior is achieved, which increases the efficiency of the present circuit.
  • the power semiconductors of the first circuits are preferably driven with a pulse width modulation and the power semiconductors of the second circuits are reversed with a lower fundamental frequency.
  • the first half-bridges are always appropriately switched so that one of the power half ⁇ conductor is turned on, while the other power semiconductor ⁇ conductor is turned off.
  • the power semiconductors within one or more of the first circuits can be controlled so that they switch synchronously. In other words, for one or more of the first circuits, switching of the power semiconductors of the first two half-bridges of this first circuit occurs simultaneously.
  • the synchronous circuit is made in all three arms, ie the arms behave in a similar way, with a power semiconductor of a first arm and a power arm of a second arm usually not switching simultaneously. In this operating mode, the Therefore, the voltage between the first circuit and the filter circuit of an arm always lies between the full value of the intermediate circuit voltage and zero, ie an association of the midpoint potential. In this case, either the two outer power semiconductors of the first two are at one time
  • power semiconductors of one or more of the first circuits can be controlled in such a way that the power semiconductors of the upper first half-bridge of one arm alternate with the power semiconductors of the lower first half-bridge of this arm.
  • the power semiconductors are controlled by means of a carrier signal, this can be achieved, for example, by means of a corresponding phase shift of the carrier signal for the lower first half-bridge with respect to the upper first half-bridge.
  • the voltage present at the input of the filter circuit changes in this switching mode between the full intermediate circuit voltage, half the intermediate circuit voltage and zero.
  • the present characterized ⁇ switching frequency is doubled compared with the switching frequency at the synchronous switching of the half-bridge.
  • the size of the filter inductors used in the filter circuit can be reduced because the filter effect is inversely proportional to the frequency of the signal.
  • Be ⁇ Sonders is advantageous that this mode of operation is well-known single-phase circuits forth, now is also applicable to a three-phase circuit with its three parallel arms.
  • the switching concept which is referred to as diagonal clocking in two parallel half bridges, for example, is not transferable to corresponding three-phase circuits such as the classic ⁇ forensic bridge inverter.
  • the specific topology of the converter according to the invention allows the be ⁇ signed mode, thus allowing to achieve the benefits of frequency doubling even with a three-phase circuit.
  • FIG. 1 shows a block diagram of a detail of a photovoltaic system
  • FIG. 2 shows a circuit diagram of an embodiment of the power converter circuit according to the invention for three-phase systems
  • FIG. 8 is a timing diagram of a voltage generated within the current sense circuit
  • FIG. 9 shows a block diagram of an embodiment of an energy storage system
  • FIG. 1 shows a block diagram of a section of a photovoltaic system 10.
  • the photovoltaic system 10 comprises a number of solar modules 11, which are organized in series circuits, so-called. Strings. Because of the overview are in Figure 1 shows only two of these strings.
  • Strings includes its own DC / DC converter 12, via which the string is connected to a DC bus 13.
  • the DC bus 13 is in turn connected to a converter circuit 20 according to the invention, which generates a three-phase AC voltage from the DC current of the DC bus 13.
  • the power converter 20 is connected to the supply network 14.
  • the three-phase AC voltage has the frequency f G of the supply network, for example, 50 Hz or 60 Hz.
  • FIG. 2 shows a circuit diagram of an embodiment of the three-phase system power converter circuit 20 according to the invention, wherein the power converter circuit comprises three parallel arms which generate the alternating voltages for the three phases. Each of the arms includes a first one
  • the power converter circuit 20 is connected between a DC voltage system 1 and an AC voltage system (not shown in FIG. 2).
  • the inverter circuit 20 includes at ⁇ circuit contacts 24a, 24b for connection to the DC voltage and AC voltage system 1 contacts 25 for connection to the AC power system.
  • the first circuits 21U, 21V, 21W each comprise two series-connected half-bridges and are connected in parallel with each other. Parallel to the half-bridges, an intermediate circuit 27 is furthermore arranged, which has a series connection of two capacitors C 1, C 2.
  • the outer terminals of the half bridges of the first circuits 21U, 21V, 21W and the intermediate circuit 27 are connected to the terminal contacts 24a, 24b and thus form the DC voltage input of the power converter circuit 20.
  • the DC link 27 is designed as a shared intermediate circuit and for producing a center point M. a DC link voltage UZK am between provided the capacitors Cl, C2 and the half-bridges potential point.
  • the first capacitor C1 is connected in parallel to the upper half bridges of the first circuits 21U, 21V, 21W and the second capacitor C2 is connected in parallel to the lower half bridges of the first circuits 21U, 21V, 21W.
  • the first capacitor Cl and the upper first half bridges are as a first Kommut réelleszelle formed and the second capacitor C2 and the lower first half-bridge are formed as a second Kommut réelleszelle, whereby parasitic effects minimize wel ⁇ che mainly by parasitic inductance of a capacitor Cl, C2 and the parallel connected half-bridge caused.
  • the filter circuits 23U, 23V, 23W each include first and second filter inductors LU1, LU2, LV1, LV2, LW1, LW2.
  • a first terminal of the first filter inductor LU1, LV1, LW1 is connected to the potential point between the power semiconductors TU1, TU2, TV1, TV2, TW1, TW2 of the respective first half-bridge.
  • Filter inductor LU2, LV2, LW2 is connected to the potential point between the power semiconductors TU3, TU4, TV3, TV4, TW3, TW4 of the second half-bridge.
  • the respective other terminals of the filter inductors LU1, LU2, LV1, LV2, LW1, LW2 are connected together via a respective filter capacitor CU ... W.
  • the filter inductors LU1, LU2, LV1, LV2, LW1, LW2 expediently have the same inductance.
  • the second circuits 22U, 22V, 22W each include a half-bridge.
  • the upper outer terminal of the half-bridge is connected to the potential point between the first filter inductor LU1, LV1, LW1 and the filter capacitor CU ... W.
  • the lower outer terminal of the half-bridge is connected to the potential ⁇ point between the second filter inductor LU2, LV2, LW2 and the filter capacitor CU ... W.
  • the potential point one of the AC ⁇ contacts 25 forms between the power semiconductors TU5, TU6, TV5, TV6, TW5, TW6 of the half bridge each arm.
  • the converter circuit 20 operates with power electro ⁇ African switches TUl ... 8, TV1 ... 8, TW1 ... 8, for example, as insulated gate bipolar transistors (IGBT), metal oxide semiconductor field effect transistors (MOSFET) or
  • Gallium nitride-high electron mobility transistors can be executed.
  • 2 shows MOSFETs and the Fi gur ⁇ 3 shows IGBTs as power electronic switch TUl ... 8, TV1 ... 8, TW1 ... 8, but this is by way of example and it can be used other types of switches.
  • the switches can in particular TUl used ... 8, TV1 ... 8, TW1 ... 8 separate under ⁇ , for example, 21W fast switching GaN switches in the half bridge of first circuits 21U, 21V, can be used, while in the half bridges of the second circuits 22U ... W IGBTs are used.
  • the 4 of the first circuits 21U ... W are provided for a modulation, preferably a pulse width modulation, PWM for short, with a clock having a significantly higher frequency as the fundamental frequency f G.
  • PWM pulse width modulation
  • 10 kHz, 100 kHz or 250 kHz are the Heidelbergver ⁇ losses of the power semiconductor TUl ... 4, TV1 ... 4, TW1 ... 4
  • the first circuits 21U ... W dominant over the Through losses and therefore power semiconductors TUl ... 4, TV1 ... 4, TW1 ... 4 are selected for the first circuits 21U ... W, which are optimized in terms of low switching losses.
  • Circuit topology of the power converter circuit 20 further allows to use for the first circuits 21U ... W power semiconductor TUl ... 4, TV1 ... 4, TW1 ... 4, which have a voltage ⁇ strength, which is half DC link voltage UZK corresponds.
  • the power semiconductors TU5, TU6, TV5, TV6, TW5, TW6 of the second circuits 22U ... W are for clocking with the
  • FIG. 3 shows a detail of the circuit diagram of the embodiment of the converter circuit 20 according to the invention according to FIG. 2.
  • FIG. 3 also shows two regions 31, 32 in the conductor structure of the power converter circuit 20.
  • the high-frequency voltage changes which are produced by the polarity reversal of the half bridges are limited to the regions 31, 32 in the topology according to the invention.
  • Circuit 20, the conductor pieces corresponding to the areas 31, 32 are kept very short.
  • Power converter circuit 20 therefore, can be designed with a low structural complexity. If the power converter circuit 20 is constructed in a multilayer board, the conductor pieces which correspond to the areas 31, 32 can be arranged, for example, in a middle position. Darü- Overlying and / or underlying layers may then have either other shielding suitable parts of the power converter circuit 20 or specially provided metallic surfaces. In turn, the housing of the power converter circuit 20 can be simplified set up, for example as art ⁇ material housing rather than metal housing because the housing Weni ⁇ ger or no Schirmungsauf poly must meet.
  • FIGS. 4 to 7 show the sequence of the switching states of the half bridges of one of the first circuits 21U
  • Half bridges of the second arm 22U ... W associated with the same arm over a period corresponding to one period of the fundamental frequency f G , ie 20 ys at a fundamental frequency of 50 Hz.
  • the half bridges are operated with a PWM according to FIG. 4 and FIG. whose frequency is for better representation only 4 kHz.
  • Figures 4 to 7 show in the horizontal direction a coinciding time axis Z.
  • ver ⁇ tical direction is a normalized axis S, which indicates the switching state of the respective half-bridge.
  • Switching state in this case comprises the state of the two power semiconductors ⁇ TU1 ... 6, TV1 ... 6, TW1 ... 6 of the respective half-bridge, where at ⁇ of the power semiconductors TU1 ... 6, TV1 ... 6, TW1 6 of a half-bridge one each turned on and the other is off ⁇ switched.
  • the half bridges of the first circuit 21U... W always switch in common mode, ie synchronously, and in opposite directions.
  • the resulting voltage difference at the outputs of the half bridges thus corresponds either to the intermediate circuit voltage UZK or zero (short-circuited outputs).
  • the filter capacitor CU... W that is to say from the perspective of the half bridges behind the filter inductors LU1, LU2, LV1, LV2, LW1, LW2, a smoothed voltage profile is realized which corresponds to an identically aligned sinusoidal alternating voltage, ie one 1 b
  • FIG. 8 uses the same time axis Z as FIGS. 4 to 7.
  • the PWM used here is designed in such a way that a sequence of half-waves remains after filtering high frequencies.
  • the switching mode thus shown in Figures 4 and 5 is thus made USAGE ⁇ a synchronous circuit of the power semiconductor TU1 ... 4, TV1 ... 4, TW1 ... 4 of the half-bridges of the first circuit 21U shown ... W. It is expedient to use this operation in the other arms, preferably in all three arms.
  • the switching times are tuned within each of the arms from ⁇ , but not the switching times between the arms.
  • the exact switching times of the half bridges are determined by the course of the PWM; because the generated waves are phase-locked to each other are shifted, the switching times of the half-bridges of the arms almost always differ from each other.
  • the voltage on the two output lines of the half-bridge is always symmetrical with respect to the voltage level in the middle M of the intermediate circuit, so Zvi ⁇ rule the two half bridges of the first circuits 21U ... W. Therefore, when this point is connected to ground, the voltage level of the second circuits 22U ... W with respect to ground does not change due to the switching actions in the half bridges. Common mode errors are advantageously significantly reduced or completely avoided.
  • the half-bridges of one, two or preferably all three first circuits 21U... W are switched with respect to one another.
  • the other half-bridge of a first circuit 21U... W does not switch in this operating mode.
  • the switching can be done with any phase shift to each other, in particular with a phase shift of 180 °.
  • the carrier signal for one of the Halbbrü ⁇ bridges relative to the carrier signal for the other half-bridge are correspondingly phase-shifted.
  • the half bridges are switched offset to one another, then for a part of the time in addition to the voltages zero and the value of the intermediate circuit voltage UZK also half of the intermediate circuit voltage UZK at the output of the half bridges. Since the half-bridge switching alternatively, but overall just as frequently as in the syn ⁇ skilled operation, the frequency of the chip doubled voltage change at the output of the half-bridge. Therefore the effective Fre acid sequence of the signal reaches the respective filter circuit 23U ... W is twice as high as in the synchronous Be ⁇ drove.
  • the components of the filter circuit 23U ⁇ ... W in particular the filter inductors LU1, LU2, LV1, LV2, LW1, LW2, be designed for a higher frequency and thus to downsize. Since the components of the filter scarf ⁇ lines 23U ... W and just the filter inductors LU1, LU2, LV1, LV2, LW1, LW represent particularly large and chunky components ⁇ , this is of particular advantage.
  • the switching within one or more, preferably all arms is always considered. Even in staggered operation, switching is largely dictated by the PWM, and the switching times between the arms are not matched.
  • the current ⁇ judge circuit 20 can be operated as a rectifier and / or as an inverter.
  • 9 shows a block diagram of an embodiment of an energy storage system 93 is ge shows ⁇ .
  • the energy storage system 93 has a erfindungsge ⁇ Permitted converter circuit 20 and an energy storage 90.
  • a charging phase 91 is a three-phase AC voltage must voltage source 94 connected to the Ener ⁇ gie Eatsystem 93 via alternating voltage contacts 25 and charges the energy storage 90.
  • the energy storage device 90 may be a rechargeable battery, which is realized for example in lithium-ion technology.
  • the three-phase AC voltage source 94 may, for example, be a generator or a grid connection with an AC voltage of, for example, 50 Hz.
  • the power converter circuit 20 is operated as a rectifier.
  • a consumer 95 via the change is appropriate ⁇ pannungsWallete 25 to the energy storage system 93 concluded and removes power from the energy storage 90.
  • the consumer 95 may for example be an electric motor or a power supply.
  • FIGS. 10 and 11 show circuit topologies which are further exemplary embodiments of the invention.
  • the circuit according to FIG. 10 largely corresponds to the circuit shown in FIG.
  • the filter circuits 1023U ... W in FIG. 10 each comprise a second filter capacitor CbU ... W, which is connected in series between the filter capacitor CU ... W and the second filter inductor LU2, LV2, LW2 ,
  • the circuit according to FIG. 11 largely corresponds to the circuit shown in FIG.
  • the filter circuits 1123U ... W in FIG. 11 each include a third and fourth filter capacitor CcU ... W, CdU ... W.
  • the third filter capacitor CCU ... W is provided between the connecting terminal 24a and the potential point between the ERS th filter inductance LU1, LV1, LW1 and connected to the gate CU Filterkondensa ⁇ ... W.
  • the fourth filter capacitor CDU ... W is provided between the connecting terminal 24b and connected to potential point Zvi ⁇ rule of the second filter LU2, LV2, LW2 and the second filter capacitor CBU ... W.

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  • Power Engineering (AREA)
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  • Inverter Devices (AREA)

Abstract

L'invention concerne un circuit convertisseur destiné à des systèmes triphasés, comprenant : - un circuit intermédiaire, - parallèlement à ce dernier, trois bras parallèles l'un à l'autre comprenant respectivement un premier circuit, un deuxième circuit et un circuit de filtrage, - le circuit intermédiaire présente des contacts de connexion qui sont destinés à être connectés à une tension continue et entre lesquels est disposé un montage en série de deux condensateurs, - le circuit intermédiaire est réalisé sous la forme d'un circuit intermédiaire divisé et sert à générer un centre d'une tension de circuit intermédiaire au point situé entre les condensateurs, - le premier circuit de chaque bras comprend deux premiers demi-ponts montés en série, - les points de potentiel entre les condensateurs et entre les premiers demi-ponts de chaque bras sont reliés entre eux, - le circuit de filtrage de chaque bras comprend des premières connexions entre lesquelles est montée une série constituée d'une première inductance de filtrage, d'un condensateur de filtrage et d'une deuxième inductance de filtrage, les premières connexions étant reliées aux centres des deux premiers demi-ponts du bras respectif, le circuit de filtrage de chaque bras comprend des deuxièmes connexions aux points entre le condensateur de filtrage et la première inductance de filtrage ainsi qu'entre le condensateur de filtrage et la deuxième inductance de filtrage, - le deuxième circuit de chaque bras comporte un deuxième demi-pont dont le centre forme une sortie de tension alternative pour la phase respective qui est associée au bras, - les points de potentiel extérieurs du deuxième demi-pont de chaque bras sont reliés aux deuxièmes connexions du circuit de filtrage du bras.
PCT/EP2017/081220 2016-12-07 2017-12-01 Convertisseur à haut rendement pour systèmes triphasés WO2018104177A1 (fr)

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DE102016224312.8 2016-12-07
DE102016224312.8A DE102016224312A1 (de) 2016-12-07 2016-12-07 Hocheffizienter Stromrichter für dreiphasige Systeme

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DE102020201810B4 (de) 2020-02-13 2023-01-12 Siemens Aktiengesellschaft Stromrichter-Schaltung
FR3119951B1 (fr) * 2021-02-12 2023-12-15 Socomec Sa Convertisseur modulaire multiniveaux pour application basse tension comprenant des branches de courant en mode de conduction discontinue

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2136465A1 (fr) 2008-06-18 2009-12-23 SMA Solar Technology AG Onduleur realisé par un pont comportant des commutateurs synchronisant lentement et rapidement
EP2306629A2 (fr) 2009-09-25 2011-04-06 Fuji Electric Holdings Co., Ltd. Convertisseur à cinq niveaux
US20110115532A1 (en) * 2009-11-16 2011-05-19 General Electric Company Multilevel converter operation
DE102012107122A1 (de) * 2011-08-08 2013-02-14 Sma Solar Technology Ag Wechselrichterschaltung
US20130088901A1 (en) * 2010-03-31 2013-04-11 Ce+T Multilevel inverter
DE102012020036A1 (de) * 2011-10-14 2013-04-18 Steca Elektronik Gmbh Schaltungsanordnung mit Wechselrichter
WO2013134904A1 (fr) * 2012-03-12 2013-09-19 丰郅(上海)新能源科技有限公司 Topologie d'onduleur monophasé sans interférences en mode commun
EP2698911A1 (fr) * 2012-05-25 2014-02-19 Huawei Technologies Co., Ltd. Circuit électronique de puissance
US20150016169A1 (en) * 2013-07-09 2015-01-15 Transphorm Inc. Multilevel inverters and their components
DE102013213986A1 (de) * 2013-07-17 2015-02-19 Siemens Aktiengesellschaft Dreipunkt-Stromrichter
WO2016146171A1 (fr) 2015-03-17 2016-09-22 Siemens Aktiengesellschaft Redresseur de haut rendement pour systèmes monophasés
EP3174190A1 (fr) * 2015-11-24 2017-05-31 ABB Schweiz AG Convertisseur à trois niveaux

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211776A (ja) * 1992-01-31 1993-08-20 Fuji Electric Co Ltd インバータ
CH700030B1 (de) * 2007-05-10 2010-06-15 Dirk Schekulin Schaltungsanordnung mit Wechselrichter- und Gleichstromstellerfunktion.

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2136465A1 (fr) 2008-06-18 2009-12-23 SMA Solar Technology AG Onduleur realisé par un pont comportant des commutateurs synchronisant lentement et rapidement
EP2306629A2 (fr) 2009-09-25 2011-04-06 Fuji Electric Holdings Co., Ltd. Convertisseur à cinq niveaux
US20110115532A1 (en) * 2009-11-16 2011-05-19 General Electric Company Multilevel converter operation
US20130088901A1 (en) * 2010-03-31 2013-04-11 Ce+T Multilevel inverter
DE102012107122A1 (de) * 2011-08-08 2013-02-14 Sma Solar Technology Ag Wechselrichterschaltung
DE102012020036A1 (de) * 2011-10-14 2013-04-18 Steca Elektronik Gmbh Schaltungsanordnung mit Wechselrichter
WO2013134904A1 (fr) * 2012-03-12 2013-09-19 丰郅(上海)新能源科技有限公司 Topologie d'onduleur monophasé sans interférences en mode commun
EP2698911A1 (fr) * 2012-05-25 2014-02-19 Huawei Technologies Co., Ltd. Circuit électronique de puissance
US20150016169A1 (en) * 2013-07-09 2015-01-15 Transphorm Inc. Multilevel inverters and their components
DE102013213986A1 (de) * 2013-07-17 2015-02-19 Siemens Aktiengesellschaft Dreipunkt-Stromrichter
WO2016146171A1 (fr) 2015-03-17 2016-09-22 Siemens Aktiengesellschaft Redresseur de haut rendement pour systèmes monophasés
EP3174190A1 (fr) * 2015-11-24 2017-05-31 ABB Schweiz AG Convertisseur à trois niveaux

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