WO2018097445A1 - Cooler of substrate processing chamber - Google Patents

Cooler of substrate processing chamber Download PDF

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Publication number
WO2018097445A1
WO2018097445A1 PCT/KR2017/007548 KR2017007548W WO2018097445A1 WO 2018097445 A1 WO2018097445 A1 WO 2018097445A1 KR 2017007548 W KR2017007548 W KR 2017007548W WO 2018097445 A1 WO2018097445 A1 WO 2018097445A1
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Prior art keywords
cooler
processing chamber
substrate processing
cooling
cylindrical shield
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PCT/KR2017/007548
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French (fr)
Korean (ko)
Inventor
정용철
유태혁
박제민
Original Assignee
주식회사 조인솔루션
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Priority to CN201780063969.5A priority Critical patent/CN109844925A/en
Publication of WO2018097445A1 publication Critical patent/WO2018097445A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Definitions

  • the present invention relates to a cooler, and more particularly, to a cooler provided in a substrate processing chamber to cool the chamber wall and the shield.
  • a substrate is placed in a processing chamber and sets processing conditions to deposit or etch a material on the substrate.
  • a typical substrate processing chamber has a chamber wall surrounding the processing zone, a gas supply for supplying gas into the chamber, a substrate support for supporting the substrate, a gas exhaust for maintaining gas pressure in the chamber, and the like.
  • Examples of such substrate processing chambers include chemical vapor deposition (CVD) chambers, sputtering chambers, and etching chambers.
  • Conventional sputtering chambers may have a process kit to reduce deposits from forming in the interior chamber walls or in areas other than the substrate.
  • process kits located around the substrate such as deposition rings, coverings, and shadow rings, prevent sputter deposits from depositing on the exposed back surface of the substrate or on the side of the substrate support.
  • a shield that protects the sidewall of the chamber prevents sputter deposits from depositing on the sidewall of the chamber. That is, the process kit serves to reduce the accumulation of sputtered deposits on the surfaces, and if sputtered deposits accumulate, they will eventually peel off and become a source of contamination in the chamber.
  • Such process kits are designed to be easily separable to remove accumulated deposits.
  • heat can be quickly transferred to the chamber wall by a process kit such as a shield, so that a heat-sensitive part such as an O-ring is damaged.
  • the technical problem to be solved by the present invention is to provide a cooler of the substrate processing chamber to prevent damage due to heat transferred through the shield even when the high temperature processing in the substrate processing chamber.
  • an embodiment of a cooler of the substrate processing chamber is a substrate processing chamber for cooling the cylindrical shield and the chamber sidewall of the substrate processing chamber having a substrate support and a cylindrical shield therein
  • the cooler of claim 1 wherein the cooler comprises: a cooler body disposed between the chamber sidewall and the cylindrical shield and configured to fit with the cylindrical shield; And a cooling flow path formed inside the cooler body, the cooling flow passage being formed so that cooling fluid flows along the circumference of the cooler body, wherein the cooling flow path is formed to have a height greater than a width, and the cooling flow path is cylindrical It is disposed around the lower part of the shield and is formed to surround the substrate support, and the cross section of the upper end portion of the cooling passage is arc-shaped.
  • the ratio of the height of the cooling passage to the width of the cooling passage may be 1: 2 to 1: 3.
  • the cooling fluid flowing inside the cooler increases and is disposed closer to the heat source than the cooling flow path in which the cooling fluid flows, so that the cooling effect of the cylindrical shield and the side wall of the substrate processing chamber is excellent.
  • damage to the O-rings or components inside the substrate processing chamber is avoided, and deposits deposited on the cylindrical shield are reduced.
  • the upper portion of the cooling flow path is formed in an arc shape, even if the pressure of the cooling fluid increases, the pressure is dispersed and the possibility of breaking the cooler is significantly reduced.
  • FIG. 1 is a schematic representation of a substrate processing chamber with a process kit and a cooler.
  • FIG. 1 An example of a substrate processing chamber with a process kit and a cooler is shown in FIG. 1.
  • the substrate processing chamber 100 processes the substrate 104 and includes a chamber sidewall 105 that surrounds the processing zone 106.
  • the substrate processing chamber 100 may be a sputtering chamber as shown in FIG. 1, which may deposit and deposit materials such as metals, metal nitrides, and metal oxides on the substrate 104.
  • the substrate processing chamber 100 has a substrate support 110 for supporting a substrate 104.
  • the substrate 104 is positioned on the upper surface of the substrate support 110, and the substrate 104 may be fixed by an electrostatic chuck.
  • Substrate support 110 may include a heater that may increase the temperature during processing.
  • the substrate processing chamber 100 has a sputtering target 120 facing the substrate support 110.
  • the sputtering target 120 includes a material sputtered on the substrate 104.
  • the sputtering target 120 is electrically insulated from the substrate processing chamber 100 by an insulating portion 123 made of an insulating material.
  • the sputtering target 120 is supported by the backing plate 125.
  • the substrate processing chamber 100 includes a gas supply unit 130 supplying gas into the substrate processing chamber 100.
  • the gas supply unit 130 supplies a processing gas into the substrate processing chamber 100 to generate a plasma.
  • the processing gas may be an inert gas such as argon (Ar), or a gas such as oxygen (O 2 ), ammonia (NH 3 ) for reactive sputtering.
  • the spent processing gas and by-products are exhausted from the substrate processing chamber 100 by the exhaust pump 135.
  • the substrate processing chamber 100 includes a process kit 140.
  • the process kit 140 is installed detachably from the substrate processing chamber 100 to clean deposits accumulated on the surface or to replace or repair corroded parts.
  • the process kit 140 includes a ring assembly 143 installed around the substrate support 110 and a cylindrical shield 145 installed within the sidewall 105 of the substrate processing chamber 100.
  • the ring assembly 143 is used to prevent deposits from depositing on the back side of the exposed substrate 104 or the side of the substrate 104 or to prevent deposits from depositing on the side of the substrate support 110. It may include.
  • the cylindrical shield 145 serves to reduce the deposition of sputter deposits on the surface of the substrate support 110, the sidewalls 105 and the bottom wall of the substrate processing chamber 100. To this end, the cylindrical shield 145 is formed to surround the substrate support 110 inside the sidewall 105 of the substrate processing chamber 100, and the lower end portion may be formed in a U-shaped cylindrical shape.
  • the substrate processing chamber 100 includes a cylindrical shield 145 and / or a cooler 150 for cooling the sidewalls 105 of the substrate processing chamber 100.
  • the cooler 150 includes a cooler body 153 and a cooling passage 155.
  • the cooler body 153 is disposed between the cylindrical shield 145 and the sidewall 105 of the substrate processing chamber 100, and the cooler body 153 and the cylindrical shield 145 are formed to fit. That is, the cylindrical shield 145 is formed in close contact with the inner outer surface of the cooler body 153. Although the cylindrical shield 145 is formed in close proximity to the cooler body 153, the cylindrical shield 145 is detachably installed with the cooler body 153.
  • An insulating part 123 is formed on the cooler main body 153, and the sputtering target 120 and the cooler main body 153 disposed above the insulating part 123 are electrically insulated from each other.
  • An O-ring 124 is inserted between the insulator 123 and the cooler body 153.
  • the cooling passage 155 is formed inside the cooler body 153. Cooling fluid flows inside the cooling passage 155 to cool the cylindrical shield 145 and the sidewalls 105 of the substrate processing chamber 100.
  • the cooling passage 155 is formed in a ring shape so that the cooling fluid flows along the circumference of the cooler body 153.
  • the cylindrical shield 145 may be excessively heated by the plasma formed in the processing zone 106.
  • the temperature of the cylindrical shield 145 is also increased by the heater of the substrate support 100.
  • the temperature of the cylindrical shield 145 is very high.
  • a component made of a low melting point material such as aluminum (Al) may be deformed.
  • thermal expansion may occur due to excessive heating of the cylindrical shield 145, and the substrate 104 may be contaminated by particles formed by peeling of sputtered deposits deposited on the cylindrical shield 145.
  • the O-ring 124 inserted between the cooler 150 and the insulator 123 may be damaged by the heat transferred from the cylindrical shield 145.
  • the cooler 150 is to prevent the cylindrical shield 145 from being overheated, and the cooling channel 155 is formed to surround the substrate support 110 around the lower portion of the cylindrical shield 154 that becomes a heat source in the high temperature processing process. do.
  • the cooling passage 155 may be formed larger in height than in width.
  • the ratio of the height to the width of the cooling passage 155 may be 1: 2 to 1: 3.
  • the cooling effect may not be sufficiently wrapped around the substrate support 110.
  • the cooling passage 155 forms an annular large passage having a height greater than the width and is disposed closer to the heat source, thereby allowing more cooling fluid to flow in the vicinity of the heat source, thereby providing a cylindrical shield 145. And the cooling effect of the sidewall 105 of the substrate processing chamber 100 is excellent.
  • the cross section of the upper portion of the cooling passage 155 may be arc-shaped. If the upper portion of the cooling channel 155 is cornered, when the pressure of the cooling fluid is increased, the pressure increases rapidly at the corners of the cooling passage 155 compared to other portions, and the cooling fluid may flow into the substrate processing chamber 100. However, if the upper portion of the cooling passage 155 is formed in an arc shape, even if the pressure of the cooling fluid increases, the pressure is dispersed and the possibility that the cooler 150 is damaged is significantly reduced.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

The present invention relates to a cooler provided at a substrate processing chamber so as to cool a chamber wall and a shield. According to one embodiment of the present invention, the cooler of the substrate processing chamber for cooling a cylindrical shield and a chamber lateral wall of the substrate processing chamber having a substrate support and the cylindrical shield therein comprises: a cooler main body disposed between the chamber lateral wall and the cylindrical shield, and formed so as to fit to the cylindrical shield; and a cooling flow path formed inside the cooler main body and penetrated such that cooling fluid flows along the periphery of the cooler main body, wherein the cooling flow path is formed such that the height is greater than the width thereof, the cooling flow path is disposed near the lower part of the cylindrical shield and formed so as to surround the substrate support, and a cross section of the upper end portion of the cooling flow path has an arc shape.

Description

기판 프로세싱 챔버의 냉각기Cooler in the substrate processing chamber
본 발명은 냉각기에 관한 것으로, 보다 상세하게는 기판 프로세싱 챔버에 구비되어 챔버 벽과 실드를 냉각하는 냉각기에 관한 것이다.The present invention relates to a cooler, and more particularly, to a cooler provided in a substrate processing chamber to cool the chamber wall and the shield.
반도체 및 디스플레이를 제조하는 프로세싱 중에, 기판은 프로세싱 챔버 내에 배치되고, 프로세싱 조건들을 세팅하여 기판 상에 물질을 증착하거나 에칭한다. 통상의 기판 프로세싱 챔버는 프로세싱 존을 둘러싸는 챔버 벽, 챔버 내로 가스를 공급하는 가스 공급부, 기판을 지지하는 기판 지지부 및 챔버 내의 가스 압력을 유지하기 위한 가스 배기부 등을 구비한다. 이러한 기판 프로세싱 챔버의 예로 CVD(Chemical Vapor Deposition) 챔버, 스퍼터링(sputtering) 챔버, 식각(Etching) 챔버 등이 있다.During processing to manufacture semiconductors and displays, a substrate is placed in a processing chamber and sets processing conditions to deposit or etch a material on the substrate. A typical substrate processing chamber has a chamber wall surrounding the processing zone, a gas supply for supplying gas into the chamber, a substrate support for supporting the substrate, a gas exhaust for maintaining gas pressure in the chamber, and the like. Examples of such substrate processing chambers include chemical vapor deposition (CVD) chambers, sputtering chambers, and etching chambers.
통상적인 스퍼터링 챔버는 증착물이 내부 챔버 벽이나 기판 외의 영역에 형성되는 것을 감소시키도록 하는 프로세스 키트(process kit)를 구비할 수 있다. 이러한 프로세스 키트 중 증착링, 커버링, 새도우 링과 같이 기판의 주위에 위치하는 프로세스 키트는 기판의 노출된 후방 표면이나 기판 지지부의 측면에 스퍼터링 증착물이 증착되는 것을 방지한다. 그리고 챔버의 측벽을 보호하는 실드(shield)는 스퍼터링 증착물이 챔버의 측벽에 증착되는 것을 방지한다. 즉, 프로세스 키트는 상기 표면들에 스퍼터링 증착물이 축적되는 것을 감소시키는 역할을 하는 것으로서, 만약, 스퍼터링 증착물들이 축적된다면 결국 박리되어 챔버 내에 오염원이 된다. 이러한 프로세스 키트는 용이하게 분리 가능하게 설계되어 축적된 증착물을 제거할 수 있게 된다.Conventional sputtering chambers may have a process kit to reduce deposits from forming in the interior chamber walls or in areas other than the substrate. Among these process kits, process kits located around the substrate, such as deposition rings, coverings, and shadow rings, prevent sputter deposits from depositing on the exposed back surface of the substrate or on the side of the substrate support. And a shield that protects the sidewall of the chamber prevents sputter deposits from depositing on the sidewall of the chamber. That is, the process kit serves to reduce the accumulation of sputtered deposits on the surfaces, and if sputtered deposits accumulate, they will eventually peel off and become a source of contamination in the chamber. Such process kits are designed to be easily separable to remove accumulated deposits.
그러나 고온에서 프로세싱이 이루어질 경우에는 실드와 같은 프로세스 키트에 의해 열이 챔버 벽으로 빠르게 전달될 수 있어, 오링(O-ring)과 같이 열에 취약한 부품이 손상을 받게 되는 문제점이 있다.However, when processing is performed at a high temperature, heat can be quickly transferred to the chamber wall by a process kit such as a shield, so that a heat-sensitive part such as an O-ring is damaged.
본 발명이 해결하고자 하는 기술적 과제는 기판 프로세싱 챔버에서 고온 프로세싱을 하는 경우에도 실드를 통해 전달된 열로 인한 손상을 방지하기 위한 기판 프로세싱 챔버의 냉각기를 제공하는 것이다.The technical problem to be solved by the present invention is to provide a cooler of the substrate processing chamber to prevent damage due to heat transferred through the shield even when the high temperature processing in the substrate processing chamber.
상기의 기술적 과제를 해결하기 위한, 본 발명에 따른 기판 프로세싱 챔버의 냉각기에 대한 일 실시예는 내부에 기판 지지대 및 원통형 실드를 구비한 기판 프로세싱 챔버의 원통형 실드와 챔버 측벽을 냉각시키기 위한 기판 프로세싱 챔버의 냉각기로서, 상기 냉각기는, 상기 챔버 측벽과 상기 원통형 실드 사이에 배치되며, 상기 원통형 실드와 피팅(fit)되도록 형성되는 냉각기 본체; 및 상기 냉각기 본체의 내부에 형성되며, 냉각 유체가 상기 냉각기 본체의 둘레를 따라 유동되도록 관통 형성된 냉각유로;를 포함하며, 상기 냉각유로는 폭보다 높이가 더 크게 형성되고, 상기 냉각유로는 상기 원통형 실드의 하부 주위에 배치되어, 상기 기판 지지대를 감싸도록 형성되며, 상기 냉각유로의 상단 부분의 단면이 호 형상이다.In order to solve the above technical problem, an embodiment of a cooler of the substrate processing chamber according to the present invention is a substrate processing chamber for cooling the cylindrical shield and the chamber sidewall of the substrate processing chamber having a substrate support and a cylindrical shield therein The cooler of claim 1, wherein the cooler comprises: a cooler body disposed between the chamber sidewall and the cylindrical shield and configured to fit with the cylindrical shield; And a cooling flow path formed inside the cooler body, the cooling flow passage being formed so that cooling fluid flows along the circumference of the cooler body, wherein the cooling flow path is formed to have a height greater than a width, and the cooling flow path is cylindrical It is disposed around the lower part of the shield and is formed to surround the substrate support, and the cross section of the upper end portion of the cooling passage is arc-shaped.
본 발명에 따른 기판 프로세싱 챔버의 냉각기에 대한 일부 실시예들에 있어서, 상기 냉각유로의 폭 대비 상기 냉각유로의 높이의 비는 1:2 내지 1:3일 수 있다.In some embodiments of the cooler of the substrate processing chamber according to the present invention, the ratio of the height of the cooling passage to the width of the cooling passage may be 1: 2 to 1: 3.
본 발명에 따르면, 냉각기 내부에 유동되는 냉각 유체가 증가하고 또한, 냉각 유체가 유동되는 냉각유로 보다 열원에 근접하게 배치됨으로써, 원통형 실드 및 기판 프로세싱 챔버의 측벽의 냉각 효과가 우수하게 된다. 따라서 오링이나 기판 프로세싱 챔버 내부 부품의 손상이 방지되며, 원통형 실드에 축적된 증착물이 박리가 감소된다. 또한, 냉각유로의 상단 부분이 호 형상으로 형성되면, 냉각 유체의 압력이 증가하더라도 압력이 분산되어 냉각기가 파손될 가능성이 현저히 감소하게 된다.According to the present invention, the cooling fluid flowing inside the cooler increases and is disposed closer to the heat source than the cooling flow path in which the cooling fluid flows, so that the cooling effect of the cylindrical shield and the side wall of the substrate processing chamber is excellent. Thus, damage to the O-rings or components inside the substrate processing chamber is avoided, and deposits deposited on the cylindrical shield are reduced. In addition, if the upper portion of the cooling flow path is formed in an arc shape, even if the pressure of the cooling fluid increases, the pressure is dispersed and the possibility of breaking the cooler is significantly reduced.
도 1은 프로세스 키트 및 냉각기를 구비한 기판 프로세싱 챔버를 개략적으로 나타내는 도면이다.1 is a schematic representation of a substrate processing chamber with a process kit and a cooler.
이하, 첨부된 도면을 참조하여 본 발명의 실시예를 상세히 설명하기로 한다. 본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 하기 실시예는 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하고, 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following examples can be modified in various other forms, and the scope of the present invention is It is not limited to an Example. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.
도면들에 있어서, 예를 들면, 제조 기술 및/또는 공차(tolerance)에 따라, 도시된 형상의 변형들이 예상될 수 있다. 따라서, 본 발명의 실시예는 본 명세서에 도시된 영역의 특정 형상에 제한된 것으로 해석되어서는 아니되며, 예를 들면 제조상 초래되는 형상의 변화를 포함하여야 한다. 동일한 부호는 시종 동일한 요소를 의미한다. 나아가, 도면에서의 다양한 요소와 영역은 개략적으로 그려진 것이다. 따라서, 본 발명은 첨부한 도면에 그려진 상대적인 크기나 간격에 의해 제한되지 않는다.In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Thus, embodiments of the present invention should not be construed as limited to the specific shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing. Like numbers refer to like elements all the time. Furthermore, various elements and regions in the drawings are schematically drawn. Accordingly, the invention is not limited by the relative size or spacing drawn in the accompanying drawings.
프로세스 키트 및 냉각기를 구비한 기판 프로세싱 챔버의 일 예를 도 1에 나타내었다.An example of a substrate processing chamber with a process kit and a cooler is shown in FIG. 1.
기판 프로세싱 챔버(100)는 기판(104)을 프로세싱하는 것으로, 프로세싱 존(106)을 둘러싸는 챔버 측벽(105)을 포함한다. 기판 프로세싱 챔버(100)는 도 1에 도시된 바와 같이 스퍼터링 챔버일 수 있으며, 이러한 스퍼터링 챔버는 금속, 금속질화물, 금속산화물과 같은 물질을 기판(104) 상에 스퍼터링하여 증착시킬 수 있다.The substrate processing chamber 100 processes the substrate 104 and includes a chamber sidewall 105 that surrounds the processing zone 106. The substrate processing chamber 100 may be a sputtering chamber as shown in FIG. 1, which may deposit and deposit materials such as metals, metal nitrides, and metal oxides on the substrate 104.
기판 프로세싱 챔버(100)는 기판(104)을 지지하는 기판 지지부(110)를 구비한다. 기판 지지부(110)의 상면에는 기판(104)이 위치하며, 정전척 등에 의해 기판(104)이 고정될 수 있다. 기판 지지부(110)는 프로세싱 중에 온도를 증가시킬 수 있는 히터를 포함할 수 있다. The substrate processing chamber 100 has a substrate support 110 for supporting a substrate 104. The substrate 104 is positioned on the upper surface of the substrate support 110, and the substrate 104 may be fixed by an electrostatic chuck. Substrate support 110 may include a heater that may increase the temperature during processing.
기판 프로세싱 챔버(100)는 기판 지지부(110)와 마주하는 스퍼터링 타겟(120)을 구비한다. 스퍼터링 타겟(120)은 기판(104) 상에 스퍼터링되는 물질을 포함한다. 스퍼터링 타겟(120)은 절연물질로 이루어진 절연부(123)에 의해 기판 프로세싱 챔버(100)로부터 전기적으로 절연된다. 스퍼터링 타겟(120)은 백킹 플레이트(125)에 의해 지지된다. 기판 프로세싱 챔버(100) 내에 플라즈마를 생성시키면, 생성된 플라즈마가 스퍼터링 타겟(120)의 물질을 스퍼터링하고, 스퍼터링된 물질이 기판(104)에 증착된다.The substrate processing chamber 100 has a sputtering target 120 facing the substrate support 110. The sputtering target 120 includes a material sputtered on the substrate 104. The sputtering target 120 is electrically insulated from the substrate processing chamber 100 by an insulating portion 123 made of an insulating material. The sputtering target 120 is supported by the backing plate 125. When plasma is generated in the substrate processing chamber 100, the generated plasma sputters the material of the sputtering target 120, and the sputtered material is deposited on the substrate 104.
기판 프로세싱 챔버(100)는 기판 프로세싱 챔버(100) 내로 가스를 공급하는 가스 공급부(130)를 구비한다. 가스 공급부(130)는 플라즈마를 생성시키기 위한 프로세싱 가스를 기판 프로세싱 챔버(100) 내로 공급한다. 프로세싱 가스는 아르곤(Ar)과 같은 비활성 가스일 수도 있고, 반응성 스퍼터링을 위해 산소(O2), 암모니아(NH3)와 같은 가스일 수도 있다. 소비된 프로세싱 가스 및 부산물은 배기펌프(135)에 의해 기판 프로세싱 챔버(100)로부터 배기된다.The substrate processing chamber 100 includes a gas supply unit 130 supplying gas into the substrate processing chamber 100. The gas supply unit 130 supplies a processing gas into the substrate processing chamber 100 to generate a plasma. The processing gas may be an inert gas such as argon (Ar), or a gas such as oxygen (O 2 ), ammonia (NH 3 ) for reactive sputtering. The spent processing gas and by-products are exhausted from the substrate processing chamber 100 by the exhaust pump 135.
기판 프로세싱 챔버(100)는 프로세스 키트(140)를 구비한다. 프로세스 키트(140)는 표면에 축적된 증착물을 세정하거나 부식된 부품을 교체 또는 수리하기 위해 기판 프로세싱 챔버(100)로부터 분리 가능하도록 설치된다. 프로세스 키트(140)는 기판 지지부(110)의 둘레에 설치되는 링 조립체(143)와 기판 프로세싱 챔버(100)의 측벽(105) 내에 설치되는 원통형 실드(145)를 포함한다. 링 조립체(143)는 노출된 기판(104)의 후면이나 기판(104)의 측면에 증착물이 증착되는 것을 방지하거나 기판 지지부(110)의 측면에 증착물이 증착되는 것을 방지하기 위한 것으로 증착링 및 커버링을 포함할 수 있다. 원통형 실드(145)는 스퍼터링 증착물이 기판 지지부(110)의 표면, 기판 프로세싱 챔버(100)의 측벽(105) 및 바닥벽에 증착되는 것을 감소시키는 역할을 한다. 이를 위해 원통형 실드(145)는 기판 프로세싱 챔버(100)의 측벽(105) 내측에 기판 지지부(110)를 둘러싸도록 형성되며, 하단부가 U자형의 원통 형상으로 형성될 수 있다.The substrate processing chamber 100 includes a process kit 140. The process kit 140 is installed detachably from the substrate processing chamber 100 to clean deposits accumulated on the surface or to replace or repair corroded parts. The process kit 140 includes a ring assembly 143 installed around the substrate support 110 and a cylindrical shield 145 installed within the sidewall 105 of the substrate processing chamber 100. The ring assembly 143 is used to prevent deposits from depositing on the back side of the exposed substrate 104 or the side of the substrate 104 or to prevent deposits from depositing on the side of the substrate support 110. It may include. The cylindrical shield 145 serves to reduce the deposition of sputter deposits on the surface of the substrate support 110, the sidewalls 105 and the bottom wall of the substrate processing chamber 100. To this end, the cylindrical shield 145 is formed to surround the substrate support 110 inside the sidewall 105 of the substrate processing chamber 100, and the lower end portion may be formed in a U-shaped cylindrical shape.
기판 프로세싱 챔버(100)는 원통형 실드(145) 및/또는 기판 프로세싱 챔버(100)의 측벽(105)을 냉각하는 냉각기(150)를 구비한다. 냉각기(150)는 냉각기 본체(153)와 냉각유로(155)를 포함한다. The substrate processing chamber 100 includes a cylindrical shield 145 and / or a cooler 150 for cooling the sidewalls 105 of the substrate processing chamber 100. The cooler 150 includes a cooler body 153 and a cooling passage 155.
냉각기 본체(153)는 원통형 실드(145)와 기판 프로세싱 챔버(100)의 측벽(105) 사이에 배치되며, 냉각기 본체(153)와 원통형 실드(145)는 피팅(fit)되도록 형성된다. 즉, 냉각기 본체(153)의 내부 외측면에 거의 근접하도록 밀착하여 원통형 실드(145)가 형성된다. 원통형 실드(145)는 냉각기 본체(153)와 근접하게 형성되더라도 냉각기 본체(153)와 분리가능하게 설치된다. 냉각기 본체(153)의 상부에는 절연부(123)가 형성되어, 절연부(123)의 상부에 배치되는 스퍼터링 타겟(120)과 냉각기 본체(153)는 전기적으로 절연된다. 그리고 절연부(123)와 냉각기 본체(153) 사이에는 오링(O-ring)(124)이 삽입된다.The cooler body 153 is disposed between the cylindrical shield 145 and the sidewall 105 of the substrate processing chamber 100, and the cooler body 153 and the cylindrical shield 145 are formed to fit. That is, the cylindrical shield 145 is formed in close contact with the inner outer surface of the cooler body 153. Although the cylindrical shield 145 is formed in close proximity to the cooler body 153, the cylindrical shield 145 is detachably installed with the cooler body 153. An insulating part 123 is formed on the cooler main body 153, and the sputtering target 120 and the cooler main body 153 disposed above the insulating part 123 are electrically insulated from each other. An O-ring 124 is inserted between the insulator 123 and the cooler body 153.
냉각유로(155)는 냉각기 본체(153) 내부에 형성된다. 냉각유로(155) 내부에는 냉각 유체가 유동하여 원통형 실드(145) 및 기판 프로세싱 챔버(100)의 측벽(105)을 냉각한다. 냉각유로(155)는 환형의 형상으로 냉각 유체가 냉각기 본체(153)의 둘레를 따라 유동되도록 관통 형성된다.The cooling passage 155 is formed inside the cooler body 153. Cooling fluid flows inside the cooling passage 155 to cool the cylindrical shield 145 and the sidewalls 105 of the substrate processing chamber 100. The cooling passage 155 is formed in a ring shape so that the cooling fluid flows along the circumference of the cooler body 153.
원통형 실드(145)는 프로세싱 존(106)에 형성된 플라즈마에 의해 과다하게 가열될 수 있다. 고온 프로세싱 공정인 경우, 기판 지지부(100)의 히터에 의해서도 원통형 실드(145)의 온도가 증가하게 된다. 특히 600℃ 이상의 고온 프로세싱 공정을 수행하게 되면, 원통형 실드(145)의 온도는 매우 높아지게 된다. 이와 같은 고온 프로세싱 공정을 수행하면, 알루미늄(Al)과 같이 녹는점이 낮은 물질로 이루어진 부품은 변형이 발생할 수 있다. 또한, 원통형 실드(145)가 과다한 가열로 인해 열 팽창이 발생하고 이로부터 원통형 실드(145)에 증착되어 있는 스퍼터링 증착물이 박리되어 형성된 파티클(particle)에 의해 기판(104)이 오염될 수도 있다. 그리고 원통형 실드(145)로부터 전달되는 열에 의해 냉각기(150)와 절연부(123) 사이에 삽입되어 있는 오링(124)이 손상될 수 있다.The cylindrical shield 145 may be excessively heated by the plasma formed in the processing zone 106. In the case of a high temperature processing process, the temperature of the cylindrical shield 145 is also increased by the heater of the substrate support 100. In particular, when performing a high temperature processing process of more than 600 ℃, the temperature of the cylindrical shield 145 is very high. When such a high temperature processing process is performed, a component made of a low melting point material such as aluminum (Al) may be deformed. In addition, thermal expansion may occur due to excessive heating of the cylindrical shield 145, and the substrate 104 may be contaminated by particles formed by peeling of sputtered deposits deposited on the cylindrical shield 145. In addition, the O-ring 124 inserted between the cooler 150 and the insulator 123 may be damaged by the heat transferred from the cylindrical shield 145.
냉각기(150)는 원통형 실드(145)가 과다 가열되는 것을 방지하기 위한 것으로, 냉각 유로(155)는 고온 프로세싱 공정에서 열원이 되는 원통형 실드(154) 하부 주위에 기판 지지부(110)를 감싸도록 형성된다. 냉각기(150)의 냉각 효율을 증대시키기 위해, 냉각유로(155)의 체적을 증가시켜, 유동되는 냉각 유체의 양을 증가시키는 것이 바람직하다. 이를 위해, 냉각유로(155)는 폭보다 높이가 더 크게 형성될 수 있다. 이때, 냉각유로(155)의 폭 대비 높이의 비는 1:2 내지 1:3일 수 있다. 냉각유로(155)의 폭 대비 높이의 비가 1:2보다 작으면, 기판 지지부(110) 주위를 충분히 감싸지 못해 냉각 효과가 감소할 수 있다. 그리고 냉각유로(155)의 폭 대비 높이의 비를 1:3보다 크게 가공하는 것은 실질적으로 어려움이 존재한다.The cooler 150 is to prevent the cylindrical shield 145 from being overheated, and the cooling channel 155 is formed to surround the substrate support 110 around the lower portion of the cylindrical shield 154 that becomes a heat source in the high temperature processing process. do. In order to increase the cooling efficiency of the cooler 150, it is preferable to increase the volume of the cooling flow path 155 to increase the amount of cooling fluid flowing. To this end, the cooling passage 155 may be formed larger in height than in width. In this case, the ratio of the height to the width of the cooling passage 155 may be 1: 2 to 1: 3. When the ratio of the height to the width of the cooling channel 155 is smaller than 1: 2, the cooling effect may not be sufficiently wrapped around the substrate support 110. In addition, there is a substantial difficulty in processing the ratio of the height to width of the cooling channel 155 larger than 1: 3.
이와 같이, 냉각유로(155)가 높이가 폭보다 큰 환형의 큰 유로를 형성하고 보다 열원에 근접하게 배치됨으로써, 내부에 보다 많은 냉각 유체가 열원에 근접하여 유동할 수 있게 되어 원통형 실드(145) 및 기판 프로세싱 챔버(100)의 측벽(105)의 냉각 효과가 우수하게 된다.As such, the cooling passage 155 forms an annular large passage having a height greater than the width and is disposed closer to the heat source, thereby allowing more cooling fluid to flow in the vicinity of the heat source, thereby providing a cylindrical shield 145. And the cooling effect of the sidewall 105 of the substrate processing chamber 100 is excellent.
또한, 냉각유로(155)의 상단 부분의 단면은 호 형상일 수 있다. 냉각 유로(155)의 상단 부분이 모서리져 있다면, 냉각 유체의 압력이 커질 경우 모서리 부분에 압력이 다른 부분에 비해 급격히 증가하여 파손되어 냉각 유체가 기판 프로세싱 챔버(100) 내로 유입될 수 있다. 그러나 냉각유로(155)의 상단 부분이 호 형상으로 형성되면, 냉각 유체의 압력이 증가하더라도 압력이 분산되어 냉각기(150)가 파손될 가능성이 현저히 감소하게 된다.In addition, the cross section of the upper portion of the cooling passage 155 may be arc-shaped. If the upper portion of the cooling channel 155 is cornered, when the pressure of the cooling fluid is increased, the pressure increases rapidly at the corners of the cooling passage 155 compared to other portions, and the cooling fluid may flow into the substrate processing chamber 100. However, if the upper portion of the cooling passage 155 is formed in an arc shape, even if the pressure of the cooling fluid increases, the pressure is dispersed and the possibility that the cooler 150 is damaged is significantly reduced.
이상에서 본 발명의 실시예에 대해 도시하고 설명하였으나, 본 발명은 상술한 특정의 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 청구범위 기재의 범위 내에 있게 된다.Although the embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described specific embodiments, and the present invention is not limited to the specific scope of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

Claims (2)

  1. 내부에 기판 지지대 및 원통형 실드를 구비한 기판 프로세싱 챔버의 원통형 실드와 챔버 측벽을 냉각시키기 위한 기판 프로세싱 챔버의 냉각기로서,A cooler in a substrate processing chamber for cooling a cylindrical sidewall and a chamber sidewall of a substrate processing chamber having a substrate support and a cylindrical shield therein,
    상기 냉각기는, The cooler,
    상기 챔버 측벽과 상기 원통형 실드 사이에 배치되며, 상기 원통형 실드와 피팅(fit)되도록 형성되는 냉각기 본체; 및A cooler body disposed between the chamber sidewall and the cylindrical shield and configured to fit with the cylindrical shield; And
    상기 냉각기 본체의 내부에 형성되며, 냉각 유체가 상기 냉각기 본체의 둘레를 따라 유동되도록 관통 형성된 냉각유로;를 포함하며,And a cooling flow path formed inside the cooler body, the cooling flow passage being formed to flow along a circumference of the cooler body.
    상기 냉각유로는 폭보다 높이가 더 크게 형성되고, The cooling flow path is formed larger than the width,
    상기 냉각유로는 상기 원통형 실드의 하부 주위에 배치되어, 상기 기판 지지대를 감싸도록 형성되며,The cooling passage is disposed around the lower portion of the cylindrical shield, is formed to surround the substrate support,
    상기 냉각유로의 상단 부분의 단면이 호 형상인 것을 특징으로 하는 기판 프로세싱 챔버의 냉각기.And a cross section of an upper portion of the cooling passage is arc shaped.
  2. 제1항에 있어서,The method of claim 1,
    상기 냉각유로의 폭 대비 상기 냉각유로의 높이의 비는 1:2 내지 1:3인 것을 특징으로 하는 기판 프로세싱 챔버의 냉각기.The ratio of the height of the cooling passage to the width of the cooling passage is 1: 2 to 1: 3 cooler of the substrate processing chamber.
PCT/KR2017/007548 2016-11-23 2017-07-14 Cooler of substrate processing chamber WO2018097445A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990070951A (en) * 1998-02-26 1999-09-15 윤종용 Single Layer Chemical Vapor Deposition Equipment
KR100713334B1 (en) * 2006-05-15 2007-05-04 동부일렉트로닉스 주식회사 Device and method for controling temperature inetching apparatus
KR100882059B1 (en) * 2006-07-14 2009-02-10 어플라이드 머티어리얼스, 인코포레이티드 Cooled anodes
KR101375742B1 (en) * 2012-12-18 2014-03-19 주식회사 유진테크 Apparatus for processing substrate
KR101394085B1 (en) * 2005-10-31 2014-05-13 어플라이드 머티어리얼스, 인코포레이티드 Process kit and target for substrate processing chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980085020A (en) * 1997-05-27 1998-12-05 김영환 Chamber device and its cooling method
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
KR101659414B1 (en) * 2014-03-11 2016-09-23 주식회사 삼원진공 sputter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990070951A (en) * 1998-02-26 1999-09-15 윤종용 Single Layer Chemical Vapor Deposition Equipment
KR101394085B1 (en) * 2005-10-31 2014-05-13 어플라이드 머티어리얼스, 인코포레이티드 Process kit and target for substrate processing chamber
KR100713334B1 (en) * 2006-05-15 2007-05-04 동부일렉트로닉스 주식회사 Device and method for controling temperature inetching apparatus
KR100882059B1 (en) * 2006-07-14 2009-02-10 어플라이드 머티어리얼스, 인코포레이티드 Cooled anodes
KR101375742B1 (en) * 2012-12-18 2014-03-19 주식회사 유진테크 Apparatus for processing substrate

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