WO2018088080A1 - Semiconductor device and method for producing same - Google Patents

Semiconductor device and method for producing same Download PDF

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Publication number
WO2018088080A1
WO2018088080A1 PCT/JP2017/036353 JP2017036353W WO2018088080A1 WO 2018088080 A1 WO2018088080 A1 WO 2018088080A1 JP 2017036353 W JP2017036353 W JP 2017036353W WO 2018088080 A1 WO2018088080 A1 WO 2018088080A1
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forming
semiconductor device
lead frame
lead
resin
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PCT/JP2017/036353
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French (fr)
Japanese (ja)
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啓年 草間
匠 野村
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株式会社デンソー
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • the present disclosure relates to a semiconductor device and a manufacturing method thereof.
  • the sealing body ie, the package and the lead are supported by the die, and the tie bar that connects the leads is cut by shearing with a cut punch. A process is performed.
  • Residual resin burrs are in a state where cracks are generated due to impact during shearing and chipping is likely to occur.
  • the lead is made of metal, the adhesiveness is low at the interface between the residual resin burr and the lead, and peeling between the residual resin burr and the lead tends to occur or chipping easily occurs.
  • Patent Document 1 proposes a method for suppressing resin burrs from remaining during tie bar cutting. Specifically, the die and the resin burr are separated from each other, and the resin burr between the leads is hit with a cut punch to cut. Then, since the resin burr adhering to the side surface of the lead is not supported by the die, it peels off at the interface with the side surface of the lead.
  • the resin burr is integrated with the sealing body, even if it is peeled off from the side surface of the lead, it may remain in a state of protruding from the sealing body. As a result, there is a possibility that the resin burrs are likely to fall off in a subsequent process, and there is a possibility that problems such as biting of foreign matter may occur.
  • This indication aims at providing the semiconductor device which can suppress generation
  • a semiconductor device includes a lead having one side, another side opposite to the one side, and a side connecting the one side and the other side, and a seal integrated with the lead by a resin And a resin burr that protrudes from the sealing body and adheres to the lead, and adheres between the lead and the resin burr at the corner between one side and the side.
  • a peeling prevention part is formed to prevent the resin burr from peeling off from the lead.
  • the peeling prevention part which improves adhesion between the lead and the resin burr and prevents the resin burr from peeling off from the lead is formed, it is possible to suppress the occurrence of problems due to the peeling of the resin burr. it can.
  • a method of manufacturing a semiconductor device includes: forming a lead frame having one surface, another surface opposite to the one surface, and a side surface connecting the one surface and the other surface; Forming an integrated sealing body, and removing a tie bar connecting the leads of the lead frame together with a part of the resin burr attached to the lead frame by forming the sealing body. Before forming the sealing body, in the portion of the lead frame outside the sealing body, the adhesion between the resin burr and the lead frame is increased at the corner between one surface and the side surface. Forming a peeling prevention portion for preventing the lead from peeling off from the lead frame.
  • the adhesion prevention between the resin burr and the lead frame is improved, and the peeling prevention part for preventing the resin burr from peeling off from the lead frame is formed. Can do.
  • FIG. 1 is a plan view of a semiconductor device according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
  • FIG. 3 is a cross-sectional view showing a manufacturing process of the semiconductor device shown in FIG. 1.
  • FIG. 3B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3A;
  • FIG. 3B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3B.
  • FIG. 3D is a cross-sectional view showing a manufacturing step of the semiconductor device following that of FIG. 3C;
  • FIG. 3D is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3D.
  • FIG. 3B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3D.
  • FIG. 3 is a plan view showing a manufacturing process of the semiconductor device shown in FIG. 1. It is sectional drawing of the semiconductor device concerning 2nd Embodiment, Comprising: It is a figure corresponded in FIG. 2 of 1st Embodiment. It is sectional drawing of the semiconductor device concerning 3rd Embodiment, Comprising: It is a figure corresponded in FIG. 2 of 1st Embodiment.
  • FIG. 7 is a cross-sectional view showing a manufacturing step of the semiconductor device shown in FIG. 6.
  • FIG. 7B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 7A;
  • the semiconductor device according to the present embodiment is a resin-encapsulated semiconductor device, and includes a sealing body 1, leads 2, tie bars 3, and resin burrs 4, as shown in FIG.
  • the sealing body 1 is a resin sealing body including a semiconductor chip, a die pad, and the like inside.
  • the sealing body 1 is composed of a general epoxy resin or the like, and is molded by a transfer molding method using a mold or the like.
  • the semiconductor device includes a plurality of leads 2, and the sealing body 1 is integrated with the plurality of leads 2 by resin.
  • the lead 2 is for connecting a semiconductor chip included in the sealing body 1 to an external circuit, and extends from the inside to the outside of the sealing body 1.
  • the lead 2 is a part of a lead frame 6 to be described later.
  • the lead 2 includes one surface 21, another surface 22 opposite to the one surface 21, and a side surface 23 that connects the one surface 21 and the other surface 22.
  • the resin burr 4 is attached to the side surface 23, and the adhesiveness between the lead 2 and the resin burr 4 is enhanced at the corner portion 24 between the one surface 21 and the side surface 23, and the resin burr 4 is peeled off from the lead 2.
  • a peeling prevention portion 25 is formed to prevent this.
  • the surface of the corner portion 24 is a curved inclined surface 26 that is inclined with respect to the one surface 21 and the side surface 23, and fine unevenness is formed on the inclined surface 26.
  • the peeling prevention part 25 is comprised by the inclined surface 26 in which the unevenness
  • the lead frame 6 is formed by pressing a metal plate 5.
  • the inclined surface 26 is formed by the processing sag generated during the press processing.
  • the inclined surface 26 has a length in the normal direction of the side surface 23 of 0.2 mm or less, and a length of the one surface 21 in the normal direction of 0.1 mm or less.
  • the lead 2 and the tie bar 3 are integrated as a part of the lead frame 6 before the tie bar cut is performed, and the two adjacent leads 2 are connected by the tie bar 3. A part of the tie bar 3 is removed by tie bar cutting, and the other part is left protruding from the lead 2.
  • a resin burr 4 is formed in a region surrounded by the sealing body 1, two adjacent leads 2, and a tie bar 3.
  • the resin burr 4 is constituted by a part of the resin used for forming the sealing body 1, protrudes from the sealing body 1 and adheres to the lead 2 and the tie bar 3.
  • the resin burr 4 is attached to the side surface 23, the surface of the corner portion 24, and the surface of the protruding portion 27.
  • Such a semiconductor device is manufactured by the steps shown in FIGS. 3A to 4.
  • a metal plate 5 having a structure in which a metal thin film is formed on the surface of a substrate is prepared.
  • the base material of the metal plate 5 is made of, for example, Cu, Fe, Al, Ni, an iron alloy, or the like, and the metal thin film is made of, for example, Ni, Au, Ag, or the like.
  • a lead frame 6 having leads 2 and tie bars 3 is formed by pressing the metal plate 5.
  • the press work is performed so that a curved inclined surface 26 is formed at the corner portion 24 between the one surface 21 and the side surface 23 of the lead 2.
  • a protrusion 27 that is a processing burr that protrudes to the opposite side of the one surface 21 is formed at the tip of the other surface 22.
  • the lead frame 6 is irradiated with a pulse laser from the one surface 21 side. Specifically, the light source or the lead frame 6 is moved so that the irradiation point of the laser light moves on the one surface 21 and the inclined surface 26 while periodically blinking the light source of the laser light. Then, the surface 21 and the inclined surface are formed by a portion cut by the laser and a portion in which the metal oxide produced by the laser irradiation or the alloy of the base material of the metal plate 5 and the metal thin film material is accumulated. Unevenness is formed in 26.
  • a semiconductor chip (not shown) is mounted on the lead frame 6, the semiconductor chip is resin-sealed by a transfer molding method using a mold, etc., and the sealing body 1 integrated with the lead frame 6. Form.
  • a resin burr 4 is formed in a region surrounded by the sealing body 1, the lead 2 and the tie bar 3 by the resin flowing out from the mold, as shown in FIGS.
  • the resin burr 4 adheres to the side surface 23 and the inclined surface 26 on which the unevenness is formed. Further, the resin burr 4 covers the protruding portion 27 and adheres to the end portion of the other surface 22.
  • the lead frame 6 is sheared so that a part of the tie bar 3 is punched from the one surface 21 toward the other surface 22.
  • the lead frame 6 and the resin burr 4 are supported by the die 7, and the cut punch 8 is applied to the one surface 21 side of the lead frame 6 to perform shearing.
  • the sealing body 1 is also supported by the die 7. As a result, a part of the tie bar 3 is removed, and the two adjacent leads 2 are separated. At this time, a part of the resin burr 4 is removed together with the tie bar 3.
  • the remaining part of the resin burr 4 protrudes from the sealing body 1 and is attached to the lead 2 as shown in FIG.
  • the peeling prevention part 25 is formed, and the adhesiveness of the resin burr
  • a lead cut process for separating an island (not shown) on which a semiconductor chip is mounted and the lead 2 is performed.
  • a semiconductor device is manufactured as described above.
  • a planar inclined surface 28 that is inclined with respect to the one surface 21 and the side surface 23 is formed in the corner portion 24, and the peeling prevention portion 25 is formed by the inclined surface 28. It is configured.
  • the area of the inclined surface 28 is made larger than the area of the inclined surface formed by machining sagging.
  • Such an inclined surface 28 is formed by grinding the corner portion 24 and the like after forming the sealing body 1 after performing the steps shown in FIGS. 3A and 3B as in the first embodiment.
  • the contact area between the lead 2 and the resin burr 4 is increased, and the peeling of the resin burr 4 is suppressed.
  • the unevenness is not formed on the one surface 21 and the inclined surface 28, but the unevenness may be formed on the inclined surface 28 as in the first embodiment. Thereby, the adhesiveness between the lead 2 and the resin burr 4 is further improved.
  • a protruding portion 29 is formed at the tip of the corner portion 24 so as to protrude from the one surface 21 toward the opposite side to the other surface 22.
  • the peeling prevention part 25 is constituted by a protrusion 29.
  • the surface of the corner between the other surface 22 and the side surface 23 is a curved inclined surface that is inclined with respect to the other surface 22 and the side surface 23.
  • the lead frame 6 and the resin burr 4 are supported by the die 7 and the cut punch 8 is applied to the one surface 21 side of the lead frame 6 on which the protrusion 29 is formed, so that the tie bar 3 is one surface. Shearing is performed so that the sheet 21 is punched from 21 toward the other surface 22.
  • the peeling of the resin burr 4 is suppressed by the close contact between the protruding portion 29 and the resin burr 4.
  • irregularities are formed in the corners 24 by laser processing, but irregularities may be formed by etching the corners 24. Further, irregularities may be formed by blasting the corners 24, and irregularities may be formed by roughening the corners 24.
  • the corners 24 may be uneven only in the portion of the lead 2 located outside the sealing body 1. Further, the unevenness may be formed only in a part of the lead 2 where the resin burr 4 adheres. Moreover, in the said 1st Embodiment, although the unevenness
  • FIG. 1st Embodiment although the unevenness

Abstract

This semiconductor device is provided with: a lead (2) which has one surface (21), the other surface (22) that is on the reverse side of the one surface (21), and a lateral surface (23) that connects the one surface (21) and the other surface (22) to each other; a sealing body which is integrated with the lead (2) by means of a resin; and a resin burr (4) which is composed of a part of the resin and adheres to the lead (2), while protruding from the sealing body. A peel-off prevention part (25) which prevents the resin burr (4) from peeling off from the lead (2) by enhancing the adhesion between the lead (2) and the resin burr (4) is formed at a corner part (24) between the one surface (21) and the lateral surface (23).

Description

半導体装置およびその製造方法Semiconductor device and manufacturing method thereof 関連出願への相互参照Cross-reference to related applications
 本出願は、2016年11月14日に出願された日本特許出願番号2016-221771号に基づくもので、ここにその記載内容が参照により組み入れられる。 This application is based on Japanese Patent Application No. 2016-221771 filed on Nov. 14, 2016, the contents of which are incorporated herein by reference.
 本開示は、半導体装置およびその製造方法に関するものである。 The present disclosure relates to a semiconductor device and a manufacturing method thereof.
 半導体装置の製造では、半導体チップおよびダイパッド等を樹脂封止する工程の後に、封止体すなわちパッケージとリードとをダイによって支持し、リードを連結するタイバーをカットパンチによるせん断加工で切断するタイバーカット工程が行われる。 In the manufacture of semiconductor devices, after the step of resin-sealing semiconductor chips and die pads, etc., the sealing body, ie, the package and the lead are supported by the die, and the tie bar that connects the leads is cut by shearing with a cut punch. A process is performed.
 タイバーカット工程では、カットパンチが封止体に接触することを避けるために、封止体から少し離れた場所が切断される。封止体と、隣り合う2つのリードと、タイバーとで囲まれる領域には、樹脂封止の際に金型の間から流出した樹脂による樹脂バリが発生している。この樹脂バリの一部はタイバーカットにより除去され、残りの部分は封止体から突出するとともにリードに付着して残留する。 In the tie bar cutting process, in order to avoid the cut punch coming into contact with the sealing body, a place slightly separated from the sealing body is cut. In a region surrounded by the sealing body, two adjacent leads, and a tie bar, resin burrs are generated due to the resin flowing out from between the molds during resin sealing. A part of the resin burr is removed by tie bar cutting, and the remaining part protrudes from the sealing body and remains attached to the lead.
 残留樹脂バリは、せん断時の衝撃でクラックが発生し、欠けが発生しやすい状態となっている。特に、リードは金属で構成されているため、残留樹脂バリとリードとの界面では接着性が低く、残留樹脂バリとリードとの間で剥離が発生し、あるいは欠けが発生しやすくなる。 Residual resin burrs are in a state where cracks are generated due to impact during shearing and chipping is likely to occur. In particular, since the lead is made of metal, the adhesiveness is low at the interface between the residual resin burr and the lead, and peeling between the residual resin burr and the lead tends to occur or chipping easily occurs.
 そのため、後工程のハンドリングや搬送等で加わる振動や衝撃により、残留樹脂バリがリードから容易に脱落するようになる。樹脂バリが脱落して、次製品のリードフレームやパッケージに付着すると、切断金型等でリードフレームをクランプした際、付着した樹脂の介在によって段差が生じることがある。そして、リードの付け根のパッケージ部分に大きな力が作用して、パッケージにクラックや欠け等が発生する場合がある。 Therefore, residual resin burrs easily fall off the leads due to vibrations and impacts applied during handling and conveyance in the post-process. If the resin burr falls off and adheres to the lead frame or package of the next product, when the lead frame is clamped with a cutting die or the like, a step may be generated due to the presence of the adhered resin. A large force acts on the package portion at the base of the lead, and the package may be cracked or chipped.
 これについて、特許文献1では、タイバーカットの際に樹脂バリが残留することを抑制するための方法が提案されている。具体的には、ダイと樹脂バリとを互いに離された状態として、カットパンチでリード間の樹脂バリを叩いて切断する。すると、リードの側面に付着している樹脂バリはダイにより支持されていないため、リード側面との界面で剥離するようになる。 In this regard, Patent Document 1 proposes a method for suppressing resin burrs from remaining during tie bar cutting. Specifically, the die and the resin burr are separated from each other, and the resin burr between the leads is hit with a cut punch to cut. Then, since the resin burr adhering to the side surface of the lead is not supported by the die, it peels off at the interface with the side surface of the lead.
特開2003-17643号公報JP 2003-17643 A
 しかしながら、樹脂バリは封止体と一体になっているため、リード側面からは剥離しても、封止体から突出した状態で残留する可能性がある。そして、これにより、後工程で樹脂バリが脱落しやすくなる可能性があり、異物噛み込み等の不具合が生じるおそれがある。 However, since the resin burr is integrated with the sealing body, even if it is peeled off from the side surface of the lead, it may remain in a state of protruding from the sealing body. As a result, there is a possibility that the resin burrs are likely to fall off in a subsequent process, and there is a possibility that problems such as biting of foreign matter may occur.
 本開示は上記点に鑑みて、樹脂バリによる不具合の発生を抑制することができる半導体装置およびその製造方法を提供することを目的とする。 This indication aims at providing the semiconductor device which can suppress generation | occurrence | production of the malfunction by a resin burr | flash, and its manufacturing method in view of the said point.
 本開示の1つの観点によれば、半導体装置は、一面、一面と反対側の他面、および、一面と他面とを連結する側面を有するリードと、樹脂によってリードと一体化された封止体と、樹脂の一部で構成されており、封止体から突出するとともにリードに付着した樹脂バリと、を備え、一面と側面との間の角部に、リードと樹脂バリとの密着性を高めて樹脂バリがリードから剥落することを防止する剥落防止部が形成されている。 According to one aspect of the present disclosure, a semiconductor device includes a lead having one side, another side opposite to the one side, and a side connecting the one side and the other side, and a seal integrated with the lead by a resin And a resin burr that protrudes from the sealing body and adheres to the lead, and adheres between the lead and the resin burr at the corner between one side and the side. A peeling prevention part is formed to prevent the resin burr from peeling off from the lead.
 これによれば、リードと樹脂バリとの密着性を高めて樹脂バリがリードから剥落することを防止する剥落防止部が形成されているため、樹脂バリの剥落による不具合の発生を抑制することができる。 According to this, since the peeling prevention part which improves adhesion between the lead and the resin burr and prevents the resin burr from peeling off from the lead is formed, it is possible to suppress the occurrence of problems due to the peeling of the resin burr. it can.
 別の観点によれば、半導体装置の製造方法は、一面、一面と反対側の他面、および、一面と他面とを連結する側面を有するリードフレームを形成することと、樹脂によってリードフレームと一体化された封止体を形成することと、リードフレームのうちリードを連結するタイバーを、封止体を形成することによりリードフレームに付着する樹脂バリの一部と共に除去することと、を含み、封止体を形成することの前に、リードフレームのうち封止体の外側の部分において、一面と側面との間の角部に、樹脂バリとリードフレームとの密着性を高めて樹脂バリがリードフレームから剥落することを防止する剥落防止部を形成することを備える。 According to another aspect, a method of manufacturing a semiconductor device includes: forming a lead frame having one surface, another surface opposite to the one surface, and a side surface connecting the one surface and the other surface; Forming an integrated sealing body, and removing a tie bar connecting the leads of the lead frame together with a part of the resin burr attached to the lead frame by forming the sealing body. Before forming the sealing body, in the portion of the lead frame outside the sealing body, the adhesion between the resin burr and the lead frame is increased at the corner between one surface and the side surface. Forming a peeling prevention portion for preventing the lead from peeling off from the lead frame.
 これによれば、樹脂バリとリードフレームとの密着性を高めて樹脂バリがリードフレームから剥落することを防止する剥落防止部が形成されるため、樹脂バリの剥落による不具合の発生を抑制することができる。 According to this, the adhesion prevention between the resin burr and the lead frame is improved, and the peeling prevention part for preventing the resin burr from peeling off from the lead frame is formed. Can do.
第1実施形態にかかる半導体装置の平面図である。1 is a plan view of a semiconductor device according to a first embodiment. 図1のII-II断面図である。FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 図1に示す半導体装置の製造工程を示す断面図である。FIG. 3 is a cross-sectional view showing a manufacturing process of the semiconductor device shown in FIG. 1. 図3Aに続く半導体装置の製造工程を示す断面図である。FIG. 3B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3A; 図3Bに続く半導体装置の製造工程を示す断面図である。FIG. 3B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3B. 図3Cに続く半導体装置の製造工程を示す断面図である。FIG. 3D is a cross-sectional view showing a manufacturing step of the semiconductor device following that of FIG. 3C; 図3Dに続く半導体装置の製造工程を示す断面図である。FIG. 3D is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 3D. 図1に示す半導体装置の製造工程を示す平面図である。FIG. 3 is a plan view showing a manufacturing process of the semiconductor device shown in FIG. 1. 第2実施形態にかかる半導体装置の断面図であって、第1実施形態の図2に相当する図である。It is sectional drawing of the semiconductor device concerning 2nd Embodiment, Comprising: It is a figure corresponded in FIG. 2 of 1st Embodiment. 第3実施形態にかかる半導体装置の断面図であって、第1実施形態の図2に相当する図である。It is sectional drawing of the semiconductor device concerning 3rd Embodiment, Comprising: It is a figure corresponded in FIG. 2 of 1st Embodiment. 図6に示す半導体装置の製造工程を示す断面図である。FIG. 7 is a cross-sectional view showing a manufacturing step of the semiconductor device shown in FIG. 6. 図7Aに続く半導体装置の製造工程を示す断面図である。FIG. 7B is a cross-sectional view showing the manufacturing process of the semiconductor device, following FIG. 7A;
 以下、本開示の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。 Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.
 (第1実施形態)
 第1実施形態について説明する。本実施形態の半導体装置は、樹脂封止型の半導体装置であって、図1に示すように、封止体1と、リード2と、タイバー3と、樹脂バリ4と、を備える。
(First embodiment)
A first embodiment will be described. The semiconductor device according to the present embodiment is a resin-encapsulated semiconductor device, and includes a sealing body 1, leads 2, tie bars 3, and resin burrs 4, as shown in FIG.
 封止体1は、内部に半導体チップおよびダイパッド等を含む樹脂封止体である。封止体1は、一般的なエポキシ樹脂等で構成されるものであり、金型を用いたトランスファーモールド法等によって成形される。 The sealing body 1 is a resin sealing body including a semiconductor chip, a die pad, and the like inside. The sealing body 1 is composed of a general epoxy resin or the like, and is molded by a transfer molding method using a mold or the like.
 半導体装置は、複数のリード2を備えており、封止体1は、樹脂によって複数のリード2と一体化されている。リード2は、封止体1に含まれる半導体チップを外部の回路に接続するためのものであり、封止体1の内側から外側へ延設されている。 The semiconductor device includes a plurality of leads 2, and the sealing body 1 is integrated with the plurality of leads 2 by resin. The lead 2 is for connecting a semiconductor chip included in the sealing body 1 to an external circuit, and extends from the inside to the outside of the sealing body 1.
 リード2は、後述するリードフレーム6の一部であり、図2に示すように、一面21、一面21と反対側の他面22、および、一面21と他面22とを連結する側面23を有している。側面23には樹脂バリ4が付着しており、一面21と側面23との間の角部24には、リード2と樹脂バリ4との密着性を高めて樹脂バリ4がリード2から剥落することを防止する剥落防止部25が形成されている。 The lead 2 is a part of a lead frame 6 to be described later. As shown in FIG. 2, the lead 2 includes one surface 21, another surface 22 opposite to the one surface 21, and a side surface 23 that connects the one surface 21 and the other surface 22. Have. The resin burr 4 is attached to the side surface 23, and the adhesiveness between the lead 2 and the resin burr 4 is enhanced at the corner portion 24 between the one surface 21 and the side surface 23, and the resin burr 4 is peeled off from the lead 2. A peeling prevention portion 25 is formed to prevent this.
 本実施形態では、角部24の表面は、一面21および側面23に対して傾斜している曲面状の傾斜面26とされており、傾斜面26には、微細な凹凸が形成されている。剥落防止部25は、凹凸が形成された傾斜面26により構成されている。このように、傾斜面26に凹凸を形成することにより、リード2と樹脂バリ4との接触面積の増加と、凹凸に樹脂バリ4が入り込むことによるアンカー効果とによって、傾斜面26に凹凸が形成されていない場合に比べてリード2と樹脂バリ4との密着性が向上する。 In the present embodiment, the surface of the corner portion 24 is a curved inclined surface 26 that is inclined with respect to the one surface 21 and the side surface 23, and fine unevenness is formed on the inclined surface 26. The peeling prevention part 25 is comprised by the inclined surface 26 in which the unevenness | corrugation was formed. In this way, by forming irregularities on the inclined surface 26, irregularities are formed on the inclined surface 26 due to an increase in the contact area between the lead 2 and the resin burr 4 and an anchor effect due to the resin burr 4 entering the irregularities. The adhesion between the lead 2 and the resin burr 4 is improved as compared with the case where it is not performed.
 後述するように、リードフレーム6は金属板5をプレス加工して形成される。このプレス加工の際に生じる加工ダレによって、傾斜面26が形成される。本実施形態では、傾斜面26は、側面23の法線方向の長さが0.2mm以下とされており、一面21の法線方向の長さが0.1mm以下とされている。なお、このプレス加工によって、他面22には、他面22から一面21とは反対側に突出する加工バリである突起部27が形成される。 As will be described later, the lead frame 6 is formed by pressing a metal plate 5. The inclined surface 26 is formed by the processing sag generated during the press processing. In the present embodiment, the inclined surface 26 has a length in the normal direction of the side surface 23 of 0.2 mm or less, and a length of the one surface 21 in the normal direction of 0.1 mm or less. By this press working, a protrusion 27 that is a processing burr that protrudes from the other surface 22 to the opposite side of the one surface 21 is formed on the other surface 22.
 後述するように、リード2およびタイバー3は、タイバーカットが行われる前はリードフレーム6の一部として一体化されており、隣り合う2つのリード2はタイバー3によって連結されている。そして、タイバーカットによってタイバー3の一部は除去され、他の部分はリード2から突出した状態で残される。 As will be described later, the lead 2 and the tie bar 3 are integrated as a part of the lead frame 6 before the tie bar cut is performed, and the two adjacent leads 2 are connected by the tie bar 3. A part of the tie bar 3 is removed by tie bar cutting, and the other part is left protruding from the lead 2.
 図1に示すように、封止体1と、隣り合う2つのリード2と、タイバー3とで囲まれる領域には、樹脂バリ4が形成されている。樹脂バリ4は、封止体1の形成に用いられる樹脂の一部で構成されており、封止体1から突出するとともにリード2およびタイバー3に付着している。リード2においては、樹脂バリ4は、側面23、角部24の表面、突起部27の表面に付着している。 As shown in FIG. 1, a resin burr 4 is formed in a region surrounded by the sealing body 1, two adjacent leads 2, and a tie bar 3. The resin burr 4 is constituted by a part of the resin used for forming the sealing body 1, protrudes from the sealing body 1 and adheres to the lead 2 and the tie bar 3. In the lead 2, the resin burr 4 is attached to the side surface 23, the surface of the corner portion 24, and the surface of the protruding portion 27.
 このような半導体装置は、図3A~図4に示す工程によって製造される。図3Aに示す工程では、基材の表面に金属薄膜が形成された構成の金属板5を用意する。金属板5の基材は、例えばCu、Fe、Al、Ni、鉄系合金等で構成され、金属薄膜は、例えばNi、Au、Ag等で構成される。 Such a semiconductor device is manufactured by the steps shown in FIGS. 3A to 4. In the step shown in FIG. 3A, a metal plate 5 having a structure in which a metal thin film is formed on the surface of a substrate is prepared. The base material of the metal plate 5 is made of, for example, Cu, Fe, Al, Ni, an iron alloy, or the like, and the metal thin film is made of, for example, Ni, Au, Ag, or the like.
 図3Bに示す工程では、金属板5をプレス加工することにより、リード2およびタイバー3を有するリードフレーム6を形成する。本実施形態では、リード2の一面21と側面23との間の角部24に曲面状の傾斜面26が形成されるようにプレス加工を行う。これにより、他面22の先端に一面21とは反対側に突出する加工バリである突起部27が形成される。 3B, a lead frame 6 having leads 2 and tie bars 3 is formed by pressing the metal plate 5. In the present embodiment, the press work is performed so that a curved inclined surface 26 is formed at the corner portion 24 between the one surface 21 and the side surface 23 of the lead 2. As a result, a protrusion 27 that is a processing burr that protrudes to the opposite side of the one surface 21 is formed at the tip of the other surface 22.
 図3Cに示す工程では、角部24の表面である傾斜面26に微細な凹凸を形成し、これにより剥落防止部25を形成する。本実施形態では、リードフレーム6に一面21側からパルスレーザを照射する。具体的には、レーザ光の光源を周期的に点滅させながら、レーザ光の照射点が一面21上および傾斜面26上を移動するように光源もしくはリードフレーム6を移動させる。すると、レーザにより削られた部分と、レーザの照射によって生じた金属酸化物、もしくは、金属板5の基材の材料と金属薄膜の材料との合金が積もった部分とによって、一面21および傾斜面26に凹凸が形成される。 In the step shown in FIG. 3C, fine irregularities are formed on the inclined surface 26 that is the surface of the corner portion 24, thereby forming the peeling prevention portion 25. In the present embodiment, the lead frame 6 is irradiated with a pulse laser from the one surface 21 side. Specifically, the light source or the lead frame 6 is moved so that the irradiation point of the laser light moves on the one surface 21 and the inclined surface 26 while periodically blinking the light source of the laser light. Then, the surface 21 and the inclined surface are formed by a portion cut by the laser and a portion in which the metal oxide produced by the laser irradiation or the alloy of the base material of the metal plate 5 and the metal thin film material is accumulated. Unevenness is formed in 26.
 図3Cに示す工程の後、リードフレーム6に図示しない半導体チップを搭載し、金型を用いたトランスファーモールド法等によって半導体チップを樹脂封止し、リードフレーム6と一体化された封止体1を形成する。 After the step shown in FIG. 3C, a semiconductor chip (not shown) is mounted on the lead frame 6, the semiconductor chip is resin-sealed by a transfer molding method using a mold, etc., and the sealing body 1 integrated with the lead frame 6. Form.
 このとき、金型から流出した樹脂によって、図3D、図4に示すように、封止体1、リード2、タイバー3で囲まれる領域に樹脂バリ4が形成される。樹脂バリ4は、側面23、および、凹凸が形成された傾斜面26に付着する。また、樹脂バリ4は、突起部27を覆って他面22の端部にも付着する。 At this time, a resin burr 4 is formed in a region surrounded by the sealing body 1, the lead 2 and the tie bar 3 by the resin flowing out from the mold, as shown in FIGS. The resin burr 4 adheres to the side surface 23 and the inclined surface 26 on which the unevenness is formed. Further, the resin burr 4 covers the protruding portion 27 and adheres to the end portion of the other surface 22.
 図3Eに示す工程では、タイバー3の一部が一面21から他面22に向かって打ち抜かれるように、リードフレーム6をせん断加工する。具体的には、リードフレーム6、樹脂バリ4をダイ7によって支持し、リードフレーム6のうち一面21側にカットパンチ8を当ててせん断加工を行う。なお、図3Eでは図示していないが、封止体1もダイ7によって支持されている。これにより、タイバー3の一部が除去され、隣り合う2つのリード2が分離する。このとき、タイバー3と共に樹脂バリ4の一部も除去される。 In the process shown in FIG. 3E, the lead frame 6 is sheared so that a part of the tie bar 3 is punched from the one surface 21 toward the other surface 22. Specifically, the lead frame 6 and the resin burr 4 are supported by the die 7, and the cut punch 8 is applied to the one surface 21 side of the lead frame 6 to perform shearing. Although not shown in FIG. 3E, the sealing body 1 is also supported by the die 7. As a result, a part of the tie bar 3 is removed, and the two adjacent leads 2 are separated. At this time, a part of the resin burr 4 is removed together with the tie bar 3.
 樹脂バリ4の残りの部分は、封止体1から突出するとともに、図2に示すようにリード2に付着した状態となる。本実施形態では、剥落防止部25が形成されて樹脂バリ4とリードフレーム6との密着性が高くなっており、また、一面21と他面22のうち剥落防止部25が形成された側からカットパンチ8が入る。これにより、封止体1と隣り合う2つのリード2とで囲まれた領域に残された樹脂バリ4の剥落が抑制される。 The remaining part of the resin burr 4 protrudes from the sealing body 1 and is attached to the lead 2 as shown in FIG. In this embodiment, the peeling prevention part 25 is formed, and the adhesiveness of the resin burr | flash 4 and the lead frame 6 is high, and also from the side in which the peeling prevention part 25 was formed among the one surface 21 and the other surface 22. Cut punch 8 enters. Thereby, peeling of the resin burr 4 left in the region surrounded by the sealing body 1 and the two adjacent leads 2 is suppressed.
 タイバーカットの後、半導体チップが搭載された図示しないアイランドとリード2とを分離するリードカット工程が行われる。以上のようにして半導体装置が製造される。 After the tie bar cut, a lead cut process for separating an island (not shown) on which a semiconductor chip is mounted and the lead 2 is performed. A semiconductor device is manufactured as described above.
 以上説明したように、本実施形態では、剥落防止部25を形成することにより、タイバーカット後に残る樹脂バリ4の剥落が抑制される。したがって、樹脂バリ4の剥落による不具合の発生を抑制することができる。 As described above, in the present embodiment, by forming the peeling prevention portion 25, peeling of the resin burr 4 remaining after the tie bar cut is suppressed. Therefore, it is possible to suppress the occurrence of problems due to the peeling of the resin burr 4.
 (第2実施形態)
 第2実施形態について説明する。第2実施形態は、第1実施形態に対して剥落防止部25の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
(Second Embodiment)
A second embodiment will be described. In the second embodiment, the configuration of the peeling prevention unit 25 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment. Therefore, only different parts from the first embodiment will be described. .
 図5に示すように、本実施形態では、角部24に一面21および側面23に対して傾斜している平面状の傾斜面28が形成されており、剥落防止部25は、傾斜面28により構成されている。傾斜面28の面積は、加工ダレによって形成される傾斜面の面積よりも大きくされている。このような傾斜面28は、第1実施形態と同様に図3A、図3Bに示す工程を行った後、封止体1を形成する前に、角部24の研削等を行うことによって形成される。 As shown in FIG. 5, in the present embodiment, a planar inclined surface 28 that is inclined with respect to the one surface 21 and the side surface 23 is formed in the corner portion 24, and the peeling prevention portion 25 is formed by the inclined surface 28. It is configured. The area of the inclined surface 28 is made larger than the area of the inclined surface formed by machining sagging. Such an inclined surface 28 is formed by grinding the corner portion 24 and the like after forming the sealing body 1 after performing the steps shown in FIGS. 3A and 3B as in the first embodiment. The
 本実施形態では、傾斜面28の面積を大きくすることにより、リード2と樹脂バリ4との接触面積が増加し、樹脂バリ4の剥落が抑制される。なお、本実施形態では、一面21および傾斜面28に凹凸が形成されていないが、第1実施形態と同様に傾斜面28に凹凸を形成してもよい。これにより、リード2と樹脂バリ4との密着性がさらに向上する。 In this embodiment, by increasing the area of the inclined surface 28, the contact area between the lead 2 and the resin burr 4 is increased, and the peeling of the resin burr 4 is suppressed. In this embodiment, the unevenness is not formed on the one surface 21 and the inclined surface 28, but the unevenness may be formed on the inclined surface 28 as in the first embodiment. Thereby, the adhesiveness between the lead 2 and the resin burr 4 is further improved.
 (第3実施形態)
 第3実施形態について説明する。第3実施形態は、第1実施形態に対して剥落防止部25の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
(Third embodiment)
A third embodiment will be described. In the third embodiment, the configuration of the peeling prevention unit 25 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment. Therefore, only different parts from the first embodiment will be described. .
 本実施形態では、図6に示すように、角部24の先端に一面21から他面22とは反対側に向かって突出した突起部29が形成されている。本実施形態では、剥落防止部25は突起部29により構成されている。そして、他面22と側面23との間の角部の表面が、他面22および側面23に対して傾斜している曲面状の傾斜面とされている。 In the present embodiment, as shown in FIG. 6, a protruding portion 29 is formed at the tip of the corner portion 24 so as to protrude from the one surface 21 toward the opposite side to the other surface 22. In the present embodiment, the peeling prevention part 25 is constituted by a protrusion 29. The surface of the corner between the other surface 22 and the side surface 23 is a curved inclined surface that is inclined with respect to the other surface 22 and the side surface 23.
 すなわち、本実施形態では、図7Aに示すように、リードフレーム6を形成する際に、他面22と側面23との間の角部に加工ダレが発生し、角部24に加工バリである突起部29が形成されるように金属板5がプレス加工される。 That is, in this embodiment, as shown in FIG. 7A, when the lead frame 6 is formed, processing sagging occurs at the corner between the other surface 22 and the side surface 23, and processing burrs occur at the corner 24. The metal plate 5 is pressed so that the protrusions 29 are formed.
 そして、図7Bに示すように、リードフレーム6、樹脂バリ4をダイ7で支持し、リードフレーム6のうち突起部29が形成された一面21側にカットパンチ8を当てて、タイバー3が一面21から他面22に向かって打ち抜かれるようにせん断加工を行う。 Then, as shown in FIG. 7B, the lead frame 6 and the resin burr 4 are supported by the die 7 and the cut punch 8 is applied to the one surface 21 side of the lead frame 6 on which the protrusion 29 is formed, so that the tie bar 3 is one surface. Shearing is performed so that the sheet 21 is punched from 21 toward the other surface 22.
 このように、突起部29が形成された側にカットパンチ8を当ててせん断加工を行う本実施形態では、突起部29と樹脂バリ4との密着によって樹脂バリ4の剥落が抑制される。 As described above, in the present embodiment in which the cut punch 8 is applied to the side on which the protruding portion 29 is formed and shearing is performed, the peeling of the resin burr 4 is suppressed by the close contact between the protruding portion 29 and the resin burr 4.
 なお、本実施形態では、一面21、および、突起部29の表面に凹凸が形成されていないが、第1実施形態と同様に突起部29の表面に凹凸を形成してもよい。これにより、リード2と樹脂バリ4との密着性がさらに向上する。 In this embodiment, no irregularities are formed on the surface 21 and the surface of the projection 29, but irregularities may be formed on the surface of the projection 29 as in the first embodiment. Thereby, the adhesiveness between the lead 2 and the resin burr 4 is further improved.
 (他の実施形態)
 なお、本開示は上記した実施形態に限定されるものではなく、適宜変更が可能である。また、上記各実施形態は、互いに無関係なものではなく、組み合わせが明らかに不可な場合を除き、適宜組み合わせが可能である。また、上記各実施形態において、実施形態を構成する要素は、特に必須であると明示した場合および原理的に明らかに必須であると考えられる場合等を除き、必ずしも必須のものではないことは言うまでもない。また、上記各実施形態において、実施形態の構成要素の個数、数値、量、範囲等の数値が言及されている場合、特に必須であると明示した場合および原理的に明らかに特定の数に限定される場合等を除き、その特定の数に限定されるものではない。また、上記各実施形態において、構成要素等の形状、位置関係等に言及するときは、特に明示した場合および原理的に特定の形状、位置関係等に限定される場合等を除き、その形状、位置関係等に限定されるものではない。
(Other embodiments)
Note that the present disclosure is not limited to the above-described embodiment, and can be modified as appropriate. Further, the above embodiments are not irrelevant to each other, and can be combined as appropriate unless the combination is clearly impossible. In each of the above-described embodiments, it is needless to say that elements constituting the embodiment are not necessarily essential unless explicitly stated as essential and clearly considered essential in principle. Yes. Further, in each of the above embodiments, when numerical values such as the number, numerical value, quantity, range, etc. of the constituent elements of the embodiment are mentioned, it is clearly limited to a specific number when clearly indicated as essential and in principle. The number is not limited to the specific number except for the case. Further, in each of the above embodiments, when referring to the shape, positional relationship, etc. of the component, etc., the shape, unless otherwise specified and in principle limited to a specific shape, positional relationship, etc. It is not limited to the positional relationship or the like.
 例えば、上記第1実施形態では、レーザ加工によって角部24に凹凸を形成したが、角部24をエッチングすることにより凹凸を形成してもよい。また、角部24をブラスト処理することにより凹凸を形成してもよく、角部24を粗化めっき処理することにより凹凸を形成してもよい。 For example, in the first embodiment, irregularities are formed in the corners 24 by laser processing, but irregularities may be formed by etching the corners 24. Further, irregularities may be formed by blasting the corners 24, and irregularities may be formed by roughening the corners 24.
 また、リード2のうち封止体1の外側に位置する部分のみにおいて角部24に凹凸を形成してもよい。また、リード2のうち樹脂バリ4が付着する領域の一部にのみ凹凸を形成してもよい。また、上記第1実施形態では、一面21および傾斜面26に凹凸を形成したが、傾斜面26にのみ凹凸を形成してもよい。 Further, the corners 24 may be uneven only in the portion of the lead 2 located outside the sealing body 1. Further, the unevenness may be formed only in a part of the lead 2 where the resin burr 4 adheres. Moreover, in the said 1st Embodiment, although the unevenness | corrugation was formed in the one surface 21 and the inclined surface 26, you may form an unevenness | corrugation only in the inclined surface 26. FIG.

Claims (14)

  1.  半導体装置であって、
     一面(21)、前記一面と反対側の他面(22)、および、前記一面と前記他面とを連結する側面(23)を有するリード(2)と、
     樹脂によって前記リードと一体化された封止体(1)と、
     前記樹脂の一部で構成されており、前記封止体から突出するとともに前記リードに付着した樹脂バリ(4)と、を備え、
     前記一面と前記側面との間の角部(24)に、前記リードと前記樹脂バリとの密着性を高めて前記樹脂バリが前記リードから剥落することを防止する剥落防止部(25)が形成されている半導体装置。
    A semiconductor device,
    A lead (2) having one surface (21), the other surface (22) opposite to the one surface, and a side surface (23) connecting the one surface and the other surface;
    A sealing body (1) integrated with the lead by resin;
    A resin burr (4) that is formed of a part of the resin and protrudes from the sealing body and adheres to the lead;
    The corner portion (24) between the one surface and the side surface is formed with a peeling prevention portion (25) that improves the adhesion between the lead and the resin burr and prevents the resin burr from peeling off the lead. Semiconductor device.
  2.  前記剥落防止部は、前記一面および前記側面に対して傾斜するとともに凹凸が形成された曲面状の傾斜面(26)により構成されている請求項1に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein the peeling prevention portion is configured by a curved inclined surface (26) that is inclined with respect to the one surface and the side surface and has unevenness.
  3.  前記剥落防止部は、前記一面および前記側面に対して傾斜している平面状の傾斜面(28)により構成されている請求項1に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein the exfoliation preventing portion is constituted by a planar inclined surface (28) inclined with respect to the one surface and the side surface.
  4.  前記剥落防止部は、前記一面から前記他面とは反対側に向かって突出した突起部(29)により構成されている請求項1に記載の半導体装置。 2. The semiconductor device according to claim 1, wherein the exfoliation preventing portion is constituted by a protruding portion (29) protruding from the one surface toward the opposite side to the other surface.
  5.  前記剥落防止部の表面には、凹凸が形成されている請求項3または4に記載の半導体装置。 5. The semiconductor device according to claim 3, wherein unevenness is formed on a surface of the peeling prevention portion.
  6.  半導体装置の製造方法であって、
     一面(21)、前記一面と反対側の他面(22)、および、前記一面と前記他面とを連結する側面(23)を有するリードフレーム(6)を形成することと、
     樹脂によって前記リードフレームと一体化された封止体(1)を形成することと、
     前記リードフレームのうちリード(2)を連結するタイバー(3)を、前記封止体を形成することにより前記リードフレームに付着する樹脂バリ(4)の一部と共に除去することと、を含み、
     前記封止体を形成することの前に、前記リードフレームのうち前記封止体の外側の部分において、前記一面と前記側面との間の角部(24)に、前記樹脂バリと前記リードフレームとの密着性を高めて前記樹脂バリが前記リードフレームから剥落することを防止する剥落防止部(25)を形成することを備える半導体装置の製造方法。
    A method for manufacturing a semiconductor device, comprising:
    Forming a lead frame (6) having one surface (21), another surface (22) opposite to the one surface, and a side surface (23) connecting the one surface and the other surface;
    Forming a sealing body (1) integrated with the lead frame by resin;
    Removing the tie bar (3) for connecting the lead (2) of the lead frame together with a part of the resin burr (4) attached to the lead frame by forming the sealing body,
    Before forming the sealing body, the resin burr and the lead frame are formed at a corner (24) between the one surface and the side surface in a portion of the lead frame outside the sealing body. A method for manufacturing a semiconductor device, comprising: forming a peeling prevention portion (25) that enhances adhesion to the lead frame and prevents the resin burr from peeling off from the lead frame.
  7.  前記剥落防止部を形成することの一部は、前記リードフレームを形成することと同時に行われ、
     前記リードフレームを形成することでは、金属板(5)をプレス加工することにより前記リードフレームを形成し、
     前記剥落防止部を形成することは、前記角部の表面に凹凸を形成することを含む請求項6に記載の半導体装置の製造方法。
    Part of forming the peeling prevention part is performed simultaneously with forming the lead frame,
    In forming the lead frame, the lead frame is formed by pressing a metal plate (5),
    The method of manufacturing a semiconductor device according to claim 6, wherein forming the peeling preventing portion includes forming irregularities on a surface of the corner portion.
  8.  前記剥落防止部を形成することは、前記一面および前記側面に対して傾斜している平面状の傾斜面(28)を形成することを含む請求項6に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 6, wherein forming the peeling preventing portion includes forming a flat inclined surface (28) inclined with respect to the one surface and the side surface.
  9.  前記剥落防止部を形成することの一部は、前記リードフレームを形成することと同時に行われ、
     前記リードフレームを形成することでは、金属板(5)をプレス加工することにより前記角部に前記一面から前記他面とは反対側に向かって突出した突起部(29)が形成されるように前記リードフレームを形成し、
     前記除去することでは、前記タイバーが前記一面から前記他面に向かって打ち抜かれるようにカットパンチ(8)を前記一面に当てて前記リードフレームをせん断加工する請求項6に記載の半導体装置の製造方法。
    Part of forming the peeling prevention part is performed simultaneously with forming the lead frame,
    By forming the lead frame, the metal plate (5) is pressed so that a protrusion (29) protruding from the one surface toward the opposite side to the other surface is formed at the corner. Forming the lead frame;
    The semiconductor device manufacturing method according to claim 6, wherein in the removal, the lead frame is sheared by applying a cut punch (8) to the one surface so that the tie bar is punched from the one surface toward the other surface. Method.
  10.  前記剥落防止部を形成することは、前記角部の表面に凹凸を形成することを含む請求項8または9に記載の半導体装置の製造方法。 10. The method for manufacturing a semiconductor device according to claim 8, wherein forming the peeling preventing portion includes forming irregularities on a surface of the corner portion.
  11.  前記凹凸を形成することでは、前記角部にレーザを照射する請求項7または10に記載の半導体装置の製造方法。 11. The method of manufacturing a semiconductor device according to claim 7, wherein forming the unevenness irradiates the corner with a laser.
  12.  前記凹凸を形成することでは、前記角部をエッチングする請求項7または10に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 7 or 10, wherein the corners are etched by forming the irregularities.
  13.  前記凹凸を形成することでは、前記角部をブラスト処理する請求項7または10に記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 7 or 10, wherein the corners are blasted by forming the irregularities.
  14.  前記凹凸を形成することでは、前記角部を粗化めっき処理する請求項7または10に記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 7 or 10, wherein the corners are subjected to rough plating treatment by forming the irregularities.
PCT/JP2017/036353 2016-11-14 2017-10-05 Semiconductor device and method for producing same WO2018088080A1 (en)

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