WO2018086730A9 - Metal complexes containing cyclopentadienyl ligands - Google Patents

Metal complexes containing cyclopentadienyl ligands Download PDF

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Publication number
WO2018086730A9
WO2018086730A9 PCT/EP2017/001283 EP2017001283W WO2018086730A9 WO 2018086730 A9 WO2018086730 A9 WO 2018086730A9 EP 2017001283 W EP2017001283 W EP 2017001283W WO 2018086730 A9 WO2018086730 A9 WO 2018086730A9
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Prior art keywords
methyl
alkyl
independently hydrogen
ethyl
silyl
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PCT/EP2017/001283
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French (fr)
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WO2018086730A8 (en
WO2018086730A1 (en
Inventor
Ming Fang
Joby ELDO
Charles DEZELAH
Daniel Moser
Ravi Kanjolia
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Merck Patent Gmbh
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Priority to KR1020227040503A priority Critical patent/KR102638657B1/en
Priority to KR1020247005275A priority patent/KR20240024372A/en
Priority to KR1020197016420A priority patent/KR102470237B1/en
Priority to JP2019521798A priority patent/JP7026683B2/en
Priority to US16/347,028 priority patent/US11312730B2/en
Priority to CN201780067987.0A priority patent/CN109906228A/en
Priority to EP17807699.8A priority patent/EP3538533A1/en
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of WO2018086730A8 publication Critical patent/WO2018086730A8/en
Publication of WO2018086730A1 publication Critical patent/WO2018086730A1/en
Priority to IL266352A priority patent/IL266352A/en
Publication of WO2018086730A9 publication Critical patent/WO2018086730A9/en
Priority to JP2022021191A priority patent/JP7385687B2/en
Priority to JP2022021192A priority patent/JP2022065093A/en
Priority to US17/692,998 priority patent/US20220194963A1/en
Priority to JP2023192115A priority patent/JP2024023276A/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present technology relates generally to metal complexes including cyclopentadienyl ligands, methods of preparing such complexes and methods of preparing metal-containing thin films using such complexes.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • CVD and ALD processes are increasingly used as they have the advantages of enhanced compositional control, high film uniformity, and effective control of doping.
  • CVD and ALD processes provide excellent conformal step coverage on highly non-planar geometries associated with modern microelectronic devices.
  • CVD is a chemical process whereby precursors are used to form a thin film on a substrate surface.
  • the precursors are passed over the surface of a substrate (e.g a wafer) in a low pressure or ambient pressure reaction chamber.
  • the precursors react and/or decompose on the substrate surface creating a thin film of deposited material.
  • Volatile by-products are removed by gas flow through the reaction chamber.
  • the deposited film thickness can be difficult to control because it depends on coordination of many parameters such as temperature, pressure, gas flow volumes and uniformity, chemical depletion effects, and time.
  • ALD is also a method for the deposition of thin films. It is a self-limiting, sequential, unique film growth technique based on surface reactions that can provide precise thickness control and deposit conformal thin films of materials provided by precursors onto surfaces substrates of varying compositions.
  • the precursors are separated during the reaction. The first precursor is passed over the substrate surface producing a monolayer on the substrate surface. Any excess unreacted precursor is pumped out of the reaction chamber. A second precursor is then passed over the substrate surface and reacts with the first precursor, forming a second monolayer of film over the first-formed monolayer of film on the substrate surface. This cycle is repeated to create a film of desired thickness.
  • Thin films, and in particular thin metal-containing films have a variety of important applications, such as in nanotechnology and the fabrication of semiconductor devices. Examples of such applications include high-refractive index optical coatings, corrosion-protection coatings, photocatalytic self-cleaning glass coatings, biocompatible coatings, dielectric capacitor layers and gate dielectric insulating films in field-effect transistors (FETs), capacitor electrodes, gate electrodes, adhesive diffusion barriers, and integrated circuits.
  • Dielectric thin films are also used in microelectronics applications, such as the high-k dielectric oxide for dynamic random access memory (DRAM) applications and the ferroelectric perovskites used in infrared detectors and non-volatile ferroelectric random access memories (NV-FeRAMs).
  • DRAM dynamic random access memory
  • NV-FeRAMs non-volatile ferroelectric random access memories
  • scandium-containing and yttrium-containing thin films are of particular interest.
  • scandium-containing films have found numerous practical applications in areas such as catalysts, batteries, memory devices, displays, sensors, and nano- and microelectronics and semiconductor devices.
  • commercial viable deposition methods using scandium-containing and yttrium-containing precursors having suitable properties including volatility, low melting point, reactivity and stability are needed.
  • scandium and yttrium complexes with performance characteristics which make them suitable for use as precursor materials in vapor deposition processes to prepare scandium- containing and yttrium-containing films.
  • scandium-containing and yttrium-containing precursors with improved performance characteristics e.g., thermal stabilities, vapor pressures, and deposition rates
  • improved performance characteristics e.g., thermal stabilities, vapor pressures, and deposition rates
  • a metal complex of Formula 1 is provided:
  • R 1 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R 1 is independently hydrogen, Ci-C 5 -alkyl or silyl; n is 1 , 2, 3, 4, or 5; Cp is cyclopentadienyl ring; and L 1 is selected from the group consisting of: NR 2 R 3 ; N(SiR 4 R 5 R 6 ) 2 ; 3,5-R 7 R 8 -C 3 HN 2 ; l-(R 32 )C 3 H 4 ; l -R 33 -3-R 34 -C 3 H 3 ; and R 35 ,R 36 -C 3 H0 2 ; wherein R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or Ci-Cs-alkyl; and R 32 , R 33 , R 34 ,
  • M 2 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R 9 is independently hydrogen or C i-C -alkyl; n is 1, 2, 3, 4 or 5; Cp is cyclopentadienyl ring; and L 2 is selected from the group consisting of: Cl, F, Br, I, and 3,5-R 10 R M -C 3 HN 2 ; wherein R 10 and R 1 1 are each independently hydrogen or C - C 5 -alkyl; wherein when M is scandium and L is Cl, R is Ci-Cs-alkyl.
  • M 2 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum)
  • each R 9 is independently hydrogen or C i-C -alkyl
  • n is 1, 2, 3, 4 or 5
  • Cp is cyclopentadienyl ring
  • L 2 is selected from the group consist
  • the method comprises vaporizing at least one metal complex corresponding in structure to Formula 1: (R l Cp) 2 M l L l (I), wherein M 1 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R 1 is independently hydrogen, Ci-Cs-alkyl or silyl; Cp is cyclopentadienyl ring; and L is selected from the group consisting of: NR R ; N(SiR- 4 R 5 R 6 ) 2 ; 3,5-R 7 R 8 -C 3 HN 2 ; l-(R 32 )C 3 H 4 ; l-R 33 -3-R 34 -C 3 H 3 ; and R 35 ,R 36 -C 3 H0 2 ; wherein R 2 , R 3 , R 4 , R 5
  • Fig. 1 illustrates XPS (X-ray Photoelectron Spectroscopy) analysis of
  • Fig. 2 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 3 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 4 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate.
  • Fig. 5 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 6 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 7 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 8 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 9 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 10 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 1 1 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- di methyl-pyrazolate) .
  • Fig. 12 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 13 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl-pyrazolate).
  • Fig. 14 illustrates XPS analysis of Sc 2 0 3 films using Sc(MeCp) 2 (3,5- dimethyl -pyrazolate) .
  • Fig. 15 illustrates dependence of ALD Y 2 0 3 growth rate per cycle on the deposition temperature when depositing [Y(MeCp) 2 (3,5-MePn-C 3 HN 2 )] 2 .
  • Fig. 16 illustrates dependence of ALD Y 2 0 3 growth rate per cycle on H 2 0 purge time when depositing [Y(MeCp) 2 (3,5-MePn-C 3 HN 2 )] 2 at l25°C, l50°C and 200°C.
  • Fig. 17 illustrates ALD Y 2 0 3 growth rate per cycle at 3 different positions in a cross-flow reactor along the precursor/carrier gas flow direction, the precursor inlet, the reactor center, and precursor outlet.
  • metal complexes methods of making such metal complexes, and methods of using such metal complexes to form thin metal-containing films via vapor deposition processes, are provided.
  • the terms“metal complex” (or more simply,“complex”) and “precursor” are used interchangeably and refer to metal-containing molecule or compound which can be used to prepare a metal-containing film by a vapor deposition process such as, for example, ALD or CVD.
  • the metal complex may be deposited on, adsorbed to, decomposed on, delivered to, and/or passed over a substrate or surface thereof, as to form a metal-containing film.
  • the metal complexes disclosed herein are nickel complexes.
  • the term“metal-containing film” includes not only an elemental metal film as more fully defined below, but also a film which includes a metal along with one or more elements, for example a metal oxide film, metal nitride film, metal silicide film, and the like.
  • the terms“elemental metal film” and“pure metal film” are used interchangeably and refer to a film which consists of, or consists essentially of, pure metal.
  • the elemental metal film may include 100% pure metal or the elemental metal film may include at least about 90%, at least about 95%, at least about 96%, at least about 97%, at least about 98%, at least about 99%, at least about 99.9%, or at least about 99.99% pure metal along with one or more impurities.
  • the term“metal film” shall be interpreted to mean an elemental metal film.
  • the metal-containing film is an elemental scandium or yttrium film.
  • the metal-containing film is scandium oxide, yttrium oxide, scandium nitride, yttrium nitride, scandium silicide or yttrium silicide film.
  • Such scandium-containing and yttrium-containing films may be prepared from various scandium and yttrium complexes described herein.
  • CVD may take the form of conventional (i.e ., continuous flow) CVD, liquid injection CVD, or photo-assisted CVD.
  • CVD may also take the form of a pulsed technique, i.e., pulsed CVD.
  • ALD may take the form of conventional (i.e., pulsed injection) ALD, liquid injection ALD, photo-assisted ALD, plasma-assisted ALD, or plasma-enhanced ALD.
  • vapor deposition process further includes various vapor deposition techniques described in Chemical Vapour Deposition: Precursors, Processes, and Applications, Jones, A. C.; Hitchman, M. L., Eds. The Royal Society of Chemistry: Cambridge, 2009; Chapter 1, pp 1-36.
  • alkyl refers to a saturated hydrocarbon chain of 1 to about 12 carbon atoms in length, such as, but not limited to, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, decyl, and so forth.
  • the alkyl group may be straight-chain or branched-chain.
  • Alkyl is intended to embrace all structural isomeric forms of an alkyl group.
  • propyl encompasses both n-propyl and isopropyl; butyl encompasses rc-butyl, sec-butyl, isobutyl and /er/-butyl; pentyl encompasses n-pentyl, / -pentyl, neopentyl, isopentyl, sec-pentyl and 3-pentyl.
  • alkyl groups are C 1 -C 5 - or Ci-C 4 -alkyl groups.
  • allyl refers to an allyl (C3H5) ligand which is bound to a metal center.
  • the allyl ligand has a resonating double bond and all three carbon atoms of the allyl ligand are bound to the metal center in r -coordination by p bonding. Therefore, the complexes of the invention are p complexes. Both of these features are represented by the dashed bonds.
  • the X 1 group replaces an allylic hydrogen to become [X’C 3 H4]; when substituted with two X groups X 1 and X 2 , it becomes [X'X 2 C 3 H 3 ] where X 1 and X 2 are the same or different, and so forth.
  • sil refers to a— SiZ'Z 2 Z 3 radical, where each of Z 1 , Z 2 , and
  • Z 3 is independently selected from the group consisting of hydrogen and optionally substituted alkyl, alkenyl, alkynyl, aryl, alkoxy, aryloxy, amino, and combinations thereof.
  • Z 7 are alkyl, and wherein Z 5 , Z 6 , and Z 7 can be the same or different alkyls.
  • a trialkylsilyl include trimethylsilyl (TMS), triethylsilyl (TES), triisopropylsilyl (TIPS) and /cr/-butyldimethylsilyl (TBDMS).
  • M 1 may be selected from the group consisting of scandium, yttrium and lanthanum. In other embodiments, M 1 may be selected from the group consisting of scandium and yttrium. In particular, M 1 may be scandium.
  • L 1 is selected from the group consisting of: NR 2 R 3 ;
  • L 1 is selected from the group consisting of: NR 2 R 3 ;
  • R 1 at each occurrence, can be the same or different. For example, if n is 2,
  • each R 1 may all be hydrogen or all be an alkyl (e.g ., Ci-C 5 -alkyl) or all be silyl.
  • each R 1 may be different.
  • a first R 1 may be hydrogen and a second R 1 may be an alkyl (e.g., Ci-Cs-alkyl) or silyl.
  • R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 at each occurrence, can be the same or different.
  • R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 may all be hydrogen or all be an alkyl (e.g., Ci-C 5 -alkyl).
  • R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 may each be hydrogen.
  • at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of, at least twelve of, at least thirteen of, at least fourteen of, at least fifteen of, or at least sixteen of R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 may be hydrogen.
  • R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be an alkyl.
  • at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of, at least twelve of, at least thirteen of, at least fourteen of, at least fifteen of, or at least sixteen of R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 may be an alkyl.
  • R 32 , R 33 , and R 34 at each occurrence can be the same or different.
  • R 32 , R 33 , and R 34 may all be an alkyl (e.g., Ci-Cs-alkyl) or may all be silyl (e.g. , SiMe 3 ).
  • R 35 and R 36 at each occurrence can be the same or different.
  • R 35 and R 36 at each occurrence can be the same or different.
  • R 35 and R 36 may all be the same or different alkyl ( e.g . , -Cs-alkyl), R 35 and R 36 may all be the same or different silyl (e.g. , SiMe 3 ) or R 35 and R 36 may be an alkyl (e.g. , C 1 -C 5 - alkyl) and a silyl (e.g. , SiMe 3 ).
  • R 32 , R 33 , R 34 , R 35 , and R 36 up to and including two of R 32 , R 33 , R 34 , R 35 , and R 36
  • R 32 33 each independently may be alkyl.
  • at least one of or at least two of R , R , R 34 , R 35 , and R 36 may be an alkyl.
  • R each independently may be silyl.
  • at least one of or at least two of R , R 33 , R 34 , R 35 , and R 36 may be an silyl.
  • the alkyl groups discussed herein can be Ci-Cg-alkyl, C
  • the alkyl is Ci-Cs-alkyl, Ci-C 4 -alkyl, Ci-C 3 -alkyl, Ci-C 2 -alkyl or -alkyl.
  • the alkyl group may be straight-chained or branch. In particular, the alkyl is straight- chained.
  • the alkyl is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, /ert-butyl, pentyl, and neopentyl.
  • silyl group discussed herein can be, but is not limited to Si(alkyl) 3 ,
  • Si(alkyl) 2 H, andSi(alkyl)H 2 wherein the alkyl is as described above.
  • the silyl include, but are not limited to SiH 3 , SiMeH 2 , SiMe 2 H, SiMe 3 SiEtH 2 , SiEt 2 H, SiEt 3 SiPrH 2 , SiPr 2 H, SiPr 3 , SiBuH 2 , SiBu 2 H, SiBu 3, where “Pr” includes /-Pr and “Bu” includes /-Bu.
  • each R 1 independently may be hydrogen, C 1- C 4 - alkyl or silyl. In another embodiment, each R 1 independently may be hydrogen, methyl, ethyl, propyl or silyl. In another embodiment, each R 1 independently may be hydrogen, methyl, or ethyl. In particular, each R 1 may be methyl.
  • R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be hydrogen or C
  • R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be hydrogen, methyl, ethyl or propyl.
  • R , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may hydrogen, methyl, or ethyl.
  • R , R , R , R , R , R , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be hydrogen or methyl.
  • each R 1 independently may be hydrogen, C
  • each R 1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R i 8 , R 19 , R 20 , and R 21 each independently may be hydrogen, methyl, ethyl or propyl.
  • each R 1 independently may be hydrogen, methyl, or ethyl; and R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 may be methyl and R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 12 , R 13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 each independently may be hydrogen or methyl.
  • R 32 , R 33 , R 34 , R 35 , and R 36 each independently may be Ci-Cs-alkyl or silyl. In other embodiments, R 32 , R 33 , R 34 , R 35 , and R 36 each independently may be C
  • R , and R each independently may silyl, such as but not limited to, SiH 3 , SiMeH 2 , SiMe 2 H, SiMe 3, SiEtH 2 , SiEt 2 H, SiEt 3 SiPrH 2 , SiPr 2 H, SiPr 3 , SiBuH 2 , SiBu 2 H, SiBu 3 .
  • R 32 , R 33 , R 34 , R 35 , and R 36 each independently may be SiMe 3 .
  • R 32 , R 33 , and R 34 each independently may be SiMe 3 .
  • R 35 and R 36 may each independently be C -C 4 -alkyl, particularly methyl and/or butyl.
  • L 1 is selected from the group consisting of: NR 2 R 3 ;
  • L 1 may be selected from the group consisting of:
  • each R 1 independently may be hydrogen, C -C 4 - alkyl or silyl; and L 1 is NR 2 R 3 , wherein R 2 and R 3 each independently may be hydrogen or Ci-C 4 -alkyl.
  • each R 1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R 2 and R 3 each independently may be hydrogen, methyl, ethyl or propyl.
  • each R 1 independently may be hydrogen, methyl, or ethyl; and R 2 and R 3 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 may be methyl; and R 2 and R 3 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 independently may be hydrogen, Ci-C 4 - alkyl or silyl; and L 1 is N(SiR 4 R 5 R 6 ) 2 , wherein R 4 , R 5 , and R 6 each independently may be hydrogen or C
  • each R 1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R 4 , R 5 , and R 6 each independently may be hydrogen, methyl, ethyl or propyl.
  • each R 1 independently may be hydrogen, methyl, or ethyl; and R 4 , R 5 , and R 6 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 may be methyl; and R 4 , R 5 , and R 6 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 may be methyl; and R 4 , R 5 , and R 6 each independently may be hydrogen, methyl, or ethyl.
  • each R 1 independently may be hydrogen, Ci-C 4 - alkyl or silyl; and L 1 may be 3,5-R 7 R 8 -C 3 HN 2 , wherein R 7 and R 8 each independently may be hydrogen or Ci-Cs-alkyl.
  • each R 1 independently may be hydrogen, methyl, ethyl, propyl or silyl.
  • each R 1 independently may be hydrogen, methyl, or ethyl.
  • each R 1 may be methyl.
  • R and R each independently may be hydrogen or Ci-C 4 -alkyl or hydrogen.
  • R and R each independently may be methyl, ethyl, propyl or hydrogen.
  • R 7 and R 8 each independently may be methyl or ethyl.
  • each R 1 independently may be hydrogen, C
  • each R independently may be hydrogen, methyl or ethyl and R may be a silyl, such as but not limited to, SiH 3 , SiMeH 2 , SiMe 2 H, SiMe 3 SiEtH 2 , SiEt 2 H, SiEt 3 SiPrH 2 , SiPr 2 H, SiPr 3 , SiBuH 2 , SiBu 2 H, SiBu 3 .
  • each R 1 independently may be methyl or ethyl and R 32 may be SiMe 3 .
  • each R 1 independently may be hydrogen, Ci-C 4 - alkyl or silyl; and L 1 may wherein R 33 and R 34 may be Ci-C 5 -alkyl or silyl.
  • each R 1 independently may be hydrogen, methyl, ethyl or silyl and R 33 and R 34 may each independently be Ci-C 4 -alkyl or silyl and R 32 may be silyl.
  • each R 1 independently may be hydrogen, methyl or ethyl and R 33 and R 34 may each independently be a silyl, such as but not limited to, SiH 3 , SiMeH 2 , SiMe 2 H, SiMe 3, SiEtH 2 , SiEt 2 H, SiEt 3, SiPrH 2 , SiPr 2 H, SiPr 3 , SiBuH 2 , SiBu 2 H, SiBu 3 .
  • each R 1 independently may be methyl or ethyl and R 33 and R 34 may be SiMe 3 .
  • each R 1 independently may be hydrogen, C 1 -C 4 - alkyl or silyl; and L 1 may be R 35 ,R 36 -C 3 H0 2 , wherein R 35 and R 36 may be Ci-C 5 -alkyl or silyl.
  • each R 1 independently may be hydrogen, methyl, ethyl or silyl and R 35 and R 36 may each independently be Ci-C 4 -alkyl or silyl.
  • each R 1 independently may be hydrogen, methyl or ethyl and R 35 and R 36 may each independently be a silyl, such as but not limited to, SiH 3 , SiMeH 2 , SiMe 2 H, SiMe 3, SiEtH 2 , SiEt 2 H, SiEt 3, SiPrH 2 , SiPr H, SiPr 3 , SiBuH 2 , SiBu 2 H, SiBu 3 .
  • each R 1 independently may be hydrogen, methyl or ethyl and R 35 and R 36 may each independently be Ci-C 4 -alkyl, particularly methyl and/or butyl.
  • each R 1 independently may be methyl or ethyl and R 35 and R 36 may independently each be methyl or butyl.
  • each R 1 independently may be methyl or ethyl and R 35 and R 36 may be SiMe 3.
  • M 2 may be selected from the group consisting of scandium, yttrium and lanthanum. In other embodiments, M may be selected from the group consisting of scandium and yttrium. In particular, M may be scandium.
  • R is C- i-Cs-alkyl
  • L 2 is selected from the group consisting of: Cl; F;
  • R 9 at each occurrence, can be the same or different. For example, if n is 2,
  • each R 9 may all be hydrogen or all be an alkyl (e.g ., Ci-Cs-alkyl).
  • each R 1 may be different.
  • a first R 9 may be hydrogen and a second R 9 may be an alkyl (e.g., Ci-C 5 -alkyl).
  • R 10 , R 1 1 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 at each occurrence, can be the same or different.
  • R 10 , R 1 1 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 may all be hydrogen or all be an alkyl ( e. g ., Ci-C 5 -alkyl).
  • R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 may each be hydrogen.
  • at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of R , R , R , R , R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 may be hydrogen.
  • R 24 , R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 each independently may be an alkyl.
  • at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of R 10 , R 1 1 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , R 28 , R 29 , R 30 , and R 31 may be an alkyl.
  • the alkyl groups discussed herein can be C
  • the alkyl is C
  • the alkyl group may be straight-chained or branch. In particular, the alkyl is straight- chained.
  • the alkyl is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, /er/-butyl, pentyl, and neopentyl.
  • each R 9 independently may be Ci-Cs-alkyl. In other embodiments, each R 9 independently may be hydrogen or Ci-C 4 -alkyl. In another embodiment, each R 9 independently may be hydrogen, methyl, ethyl, or propyl. In another embodiment, each R 9 independently may be hydrogen, methyl, or ethyl ln particular, each R 9 may be methyl.
  • M may be scandium and each R independently may be a Ci-C 4 -alkyl.
  • M 2 may be scandium
  • L 2 may be Cl and each R 9 independently may be methyl, ethyl or propyl.
  • each R 9 may independently be methyl or ethyl.
  • M 2 may be yttrium and each R 9 independently may be a Ci-C 4 -alkyl.
  • M may be yttrium
  • L may be 3,5-R l0 R n -C 3 HN 2
  • each R 9 independently may be methyl, ethyl or propyl
  • R 10 and R 9 each independently may be a Ci-C 5 -alkyl.
  • each R 9 independently may be methyl or ethyl.
  • Additional other metal complexes include Y(MeCp) 2 (3,5- tBu 2 -C 3 HN 2 )(THF), Y (MeCp) 2 (3,5-MePn-C 3 HN 2 )(THF), and Y(MeCp) 2 (3,5-tBu, iBu- C 3 HN 2 )(THF).
  • “THF” refers to tetrahydrofuran
  • metal complexes provided herein may be prepared, for example, as shown below in Scheme A.
  • the metal complexes provided herein may be used to prepare metal- containing films such as, for example, elemental scandium, elemental yttrium, scandium oxide, yttrium oxide, scandium nitride, yttrium nitride and scandium silicide and yttrium silicide films.
  • a method of forming a metal-containing film by a vapor deposition process comprises vaporizing at least one organometallic complex corresponding in structure to Formula I, Formula II, or a combination thereof, as disclosed herein.
  • this may include ( 1) vaporizing the at least one complex and (2) delivering the at least one complex to a substrate surface or passing the at least one complex over a substrate (and/or decomposing the at least one complex on the substrate surface).
  • a variety of substrates can be used in the deposition methods disclosed herein.
  • metal complexes as disclosed herein may be delivered to, passed over, or deposited on a variety of substrates or surfaces thereof such as, but not limited to, silicon, crystalline silicon, Si(l00), Si(l 1 1), silicon oxide, glass, strained silicon, silicon on insulator (SOI), doped silicon or silicon oxide(s) (e.g ., carbon doped silicon oxides), silicon nitride, germanium, gallium arsenide, tantalum, tantalum nitride, aluminum, copper, ruthenium, titanium, titanium nitride, tungsten, tungsten nitride, and any number of other substrates commonly encountered in nanoscale device fabrication processes (e.g., semiconductor fabrication processes).
  • substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface.
  • the substrate surface contains a hydrogen-terminated surface.
  • the metal complex may be dissolved in a suitable solvent such as a hydrocarbon or an amine solvent to facilitate the vapor deposition process.
  • suitable solvent such as a hydrocarbon or an amine solvent
  • hydrocarbon solvents include, but are not limited to, aliphatic hydrocarbons, such as hexane, heptane and nonane; aromatic hydrocarbons, such as toluene and xylene; and aliphatic and cyclic ethers, such as diglyme, triglyme, and tetraglyme.
  • appropriate amine solvents include, without limitation, octylamine and /V/V-dimethyldodecylamine.
  • the metal complex may be dissolved in toluene to yield a solution with a concentration from about 0.05 M to about 1 M.
  • the at least one metal complex may be delivered
  • the vapor deposition process is chemical vapor deposition. [0089] ln another embodiment, the vapor deposition process is atomic layer deposition.
  • the ALD and CVD methods encompass various types of ALD and CVD processes such as, but not limited to, continuous or pulsed injection processes, liquid injection processes, photo-assisted processes, plasma-assisted, and plasma-enhanced processes.
  • the methods of the present technology specifically include direct liquid injection processes.
  • direct liquid injection CVD (“DLI-CVD”)
  • DLI-CVD direct liquid injection CVD
  • a solid or liquid metal complex may be dissolved in a suitable solvent and the solution formed therefrom injected into a vaporization chamber as a means to vaporize the metal complex. The vaporized metal complex is then transported/delivered to the substrate surface.
  • DLI-CVD may be particularly useful in those instances where a metal complex displays relatively low volatility or is otherwise difficult to vaporize.
  • conventional or pulsed CVD is used to form a metal- containing film vaporizing and/or passing the at least one metal complex over a substrate surface.
  • conventional CVD processes see, for example Smith, Donald (1995). Thin- Film Deposition: Principles and Practice. McGraw-Hill.
  • CVD growth conditions for the metal complexes disclosed herein include, but are not limited to: a. Substrate temperature: 50 - 600 °C
  • Oxygen flow rate 0 - 500 seem
  • photo-assisted CVD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface.
  • conventional (i.e., pulsed injection) ALD is used to form a metal-containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface.
  • pulsed injection i.e., pulsed injection
  • liquid injection ALD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface, wherein at least one metal complex is delivered to the reaction chamber by direct liquid injection as opposed to vapor draw by a bubbler.
  • liquid injection ALD processes see, for example, Potter R. J., et al., Chem. Vap. Deposition, 2005, 7/(3), 159-169.
  • Examples of ALD growth conditions for metal complexes disclosed herein include, but are not limited to: a. Substrate temperature: 0 - 400 °C
  • Pulse sequence (metal complex/purge/reactive gas/purge): will vary according to chamber size
  • photo-assisted ALD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface.
  • photo-assisted ALD processes see, for example, U.S. Patent
  • plasma-assisted or plasma-enhanced ALD is used to form a metal-containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface.
  • a method of forming a metal-containing film on a substrate surface comprises: during an ALD process, exposing a substrate to a vapor phase metal complex according to one or more of the embodiments described herein, such that a layer is formed on the surface comprising the metal complex bound to the surface by the metal center (e.g ., nickel); during an ALD process, exposing the substrate having bound metal complex with a co-reactant such that an exchange reaction occurs between the bound metal complex and co-reactant, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate; and sequentially repeating the ALD process and the treatment.
  • a metal center e.g ., nickel
  • the reaction time, temperature and pressure are selected to create a metal- surface interaction and achieve a layer on the surface of the substrate.
  • the reaction conditions for the ALD reaction will be selected based on the properties of the metal complex.
  • the deposition can be carried out at atmospheric pressure but is more commonly carried out at a reduced pressure.
  • the vapor pressure of the metal complex should be low enough to be practical in such applications.
  • the substrate temperature should be high enough to keep the bonds between the metal atoms at the surface intact and to prevent thermal decomposition of gaseous reactants. However, the substrate temperature should also be high enough to keep the source materials (i.e., the reactants) in the gaseous phase and to provide sufficient activation energy for the surface reaction.
  • the appropriate temperature depends on various parameters, including the particular metal complex used and the pressure.
  • the properties of a specific metal complex for use in the ALD deposition methods disclosed herein can be evaluated using methods known in the art, allowing selection of appropriate temperature and pressure for the reaction.
  • lower molecular weight and the presence of functional groups that increase the rotational entropy of the ligand sphere result in a melting point that yields liquids at typical delivery temperatures and increased vapor pressure.
  • a metal complex for use in the deposition methods will have all of the requirements for sufficient vapor pressure, sufficient thermal stability at the selected substrate temperature and sufficient reactivity to produce a reaction on the surface of the substrate without unwanted impurities in the thin film.
  • Sufficient vapor pressure ensures that molecules of the source compound are present at the substrate surface in sufficient concentration to enable a complete self-saturating reaction.
  • Sufficient thermal stability ensures that the source compound will not be subject to the thermal decomposition which produces impurities in the thin film.
  • the metal complexes disclosed herein utilized in these methods may be liquid, solid, or gaseous. Typically, the metal complexes are liquids or solids at ambient temperatures with a vapor pressure sufficient to allow for consistent transport of the vapor to the process chamber.
  • an elemental metal, a metal nitride, a metal oxide, or a metal silicide film can be formed by delivering for deposition at least one metal complex as disclosed herein, independently or in combination with a co-reactant.
  • the co-reactant may be deposited or delivered to or passed over a substrate surface, independently or in combination with the at least one metal complex.
  • the particular co-reactant used will determine the type of metal-containing film is obtained.
  • co-reactants include, but are not limited to hydrogen, hydrogen plasma, oxygen, air, water, an alcohol, H 2 0 2 , N 2 0, ammonia, a hydrazine, a borane, a silane, ozone, or a combination of any two or more thereof.
  • suitable alcohols include, without limitation, methanol, ethanol, propanol, isopropanol, ier/-butanol, and the like.
  • suitable boranes include, without limitation, hydridic (i.e., reducing) boranes such as borane, diborane, triborane and the like.
  • silanes include, without limitation, hydridic silanes such as silane, disilane, trisilane, and the like.
  • suitable hydrazines include, without limitation, hydrazine (N 2 H 4 ), a hydrazine optionally substituted with one or more alkyl groups (i.e., an alkyl-substituted hydrazine) such as methylhydrazine, tert- butylhydrazine, N,N- or /V,/V'-dimethylhydrazine, a hydrazine optionally substituted with one or more aryl groups (i.e., an aryl-substituted hydrazine) such as phenylhydrazine, and the like.
  • alkyl groups i.e., an alkyl-substituted hydrazine
  • aryl groups i.e., an aryl-substituted hydrazine
  • the metal complexes disclosed herein are delivered to the substrate surface in pulses alternating with pulses of an oxygen-containing co-reactant as to provide metal oxide films.
  • oxygen-containing co-reactants include, without limitation, H 2 0, H 2 0 2 , 0 2 , ozone, air, /-PrOH, ⁇ -BuOH, or N 2 0.
  • a co-reactant comprises a reducing reagent such as hydrogen.
  • a reducing reagent such as hydrogen.
  • an elemental metal film is obtained.
  • the elemental metal film consists of, or consists essentially of, pure metal.
  • Such a pure metal film may contain more than about 80, 85, 90, 95, or 98% metal.
  • the elemental metal film is a scandium film or a yttrium film.
  • a co-reactant is used to form a metal nitride film by delivering for deposition at least one metal complex as disclosed herein, independently or in combination, with a co-reactant such as, but not limited to, ammonia, a hydrazine, and/or other nitrogen-containing compounds (e.g ., an amine) to a reaction chamber.
  • a co-reactant such as, but not limited to, ammonia, a hydrazine, and/or other nitrogen-containing compounds (e.g ., an amine) to a reaction chamber.
  • a co-reactant such as, but not limited to, ammonia, a hydrazine, and/or other nitrogen-containing compounds (e.g ., an amine) to a reaction chamber.
  • a co-reactant such as, but not limited to, ammonia, a hydrazine, and/or other nitrogen-containing compounds (e.g ., an amine) to a reaction
  • a mixed-metal film can be formed by a vapor deposition process which vaporizes at least one metal complex as disclosed herein in combination, but not necessarily at the same time, with a second metal complex comprising a metal other than that of the at least one metal complex disclosed herein.
  • the methods of the present technology are utilized for applications such as dynamic random access memory (DRAM) and complementary metal oxide semi-conductor (CMOS) for memory and logic applications, on substrates such as silicon chips.
  • DRAM dynamic random access memory
  • CMOS complementary metal oxide semi-conductor
  • any of the metal complexes disclosed herein may be used to prepare thin films of the elemental metal, metal oxide, metal nitride, and/or metal silicide.
  • Such films may find application as oxidation catalysts, anode materials (e.g., SOFC or LIB anodes), conducting layers, sensors, diffusion barriers/coatings, super- and non-superconducting materials/coatings, tribological coatings, and/or, protective coatings.
  • the film properties (e.g., conductivity) will depend on a number of factors, such as the metal(s) used for deposition, the presence or absence of co- reactants and/or co-complexes, the thickness of the film created, the parameters and substrate employed during growth and subsequent processing.
  • Formula I metal complexes possess enough thermal stability and reactivity toward select co-reactants to function as ALD precursors, and they possess clean decomposition pathways at higher temperatures to form desired materials through CVD processes as well. Therefore, the metal complexes described by Formula I are advantageously useful as viable ALD and CVD precursors.
  • Embodiment 1 A metal complex corresponding in structure to Formula I: [(R'l n Cp M'L 1 (I), wherein M 1 is a Group 3 metal or a lanthanide ( e.
  • Embodiment 2 The metal complex of embodiment 1 , wherein each R 1 is independently hydrogen, Ci-C 4 -alkyl or silyl; and R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or Ci-C 4 -alkyl; and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently Ci-Cs-alkyl or silyl.
  • Embodiment 3 The metal complex of embodiment 1 or 2, wherein each R 1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl or ethyl, more preferably methyl; and R , R , R , R , R , and R are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen methyl or ethyl, more preferably hydrogen or methyl; and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently Ci-C 4 -alkyl or silyl, preferably methyl, ethyl, propyl or silyl, more preferably SiMe 3 .
  • Embodiment 4 The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, Ci-C 4 -alkyl or silyl; and L 1 is NR 2 R 3 , wherein R 2 and R 3 are each independently hydrogen or C
  • Embodiment 5 The metal complex of embodiment 4, wherein each R 1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl; and R 2 and R 3 are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl or ethyl.
  • Embodiment 6. The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, Ci-C 4 -alkyl or silyl; and L 1 is N(SiR 4 R 5 R 6 ) 2 , wherein R 4 , R 5 , and R 6 are each independently hydrogen or C
  • Embodiment 7 The metal complex of embodiment 6, wherein each R 1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl; and R 4 , R 5 , and R 6 are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl or ethyl.
  • Embodiment 8 The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, C
  • Embodiment 9 The metal complex of embodiment 8, wherein each R 1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl.
  • Embodiment 10 The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, Ci-C 4 -alkyl or silyl, preferably hydrogen, methyl, ethyl or silyl; and L 1 is l -(R 32 )C 3 H 4 , wherein R 32 is Ci-Cs-alkyl or silyl, preferably R is methyl, ethyl or silyl, more preferably L is l -(SiMe 3 )C 3 H 4 .
  • Embodiment 1 The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, Ci-C 4 -alkyl or silyl, preferably hydrogen, methyl, ethyl or silyl; and L 1 is l -R 33 -3-R 34 -C 3 H 3 , wherein R 33 and R 34 are each independently Ci-Cs-alkyl or silyl, preferably R 33 and R 34 are each independently methyl, ethyl or silyl, more preferably L 1 is l,3-bis-(SiMe 3 ) 2 C 3 H 3 .
  • Embodiment 12 The metal complex of any one of the previous embodiments, wherein each R 1 is independently hydrogen, C
  • Embodiment 15 The metal complex of embodiment 14, wherein each R 9 is independently Ci-Cs-alkyl
  • Embodiment 16 The metal complex of embodiment 14 or 15, wherein each R 9 is independently hydrogen or C i-C 4 -alkyl, preferably hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl, or ethyl, more preferably methyl.
  • Embodiment 17 The metal complex of embodiments 14, 15 or 16, wherein M 2 is scandium; each R 9 is independently a Ci-C 4 -alkyl, preferably methyl, ethyl or propyl, more preferably methyl; and preferably L 2 is Cl.
  • Embodiment 18 The metal complex of embodiments 14, 15 or 16, wherein M 2 is yttrium; each R 9 is independently a C
  • Embodiment 19 The metal complex of embodiments 14, 15, 16, 17 or 18, wherein the complex is [Sc(MeCp) 2 ]Cl] 2 ; and [Y(MeCp) 2 (3,5-MePn-C 3 HN 2 )] 2 .
  • Embodiment 20 A method of forming a metal-containing film by a vapor deposition process, the method comprising vaporizing at least one metal complex according to any one of the previous embodiments.
  • Embodiment 21 The method of embodiment 20, wherein the vapor deposition process is chemical vapor deposition, preferably pulsed chemical vapor deposition, continuous flow chemical vapor deposition, and/or liquid injection chemical vapor deposition.
  • Embodiment 22 The method of embodiment 20, wherein the vapor deposition process is atomic layer deposition, preferably liquid injection atomic layer deposition or plasma-enhanced atomic layer deposition.
  • Embodiment 23 The method of any one of embodiments 20, 21 or 22, wherein the metal complex is delivered to a substrate in pulses alternating with pulses of an oxygen source, preferably the oxygen source is selected from the group consisting of H 2 0, H 2 0 2, 0 2 , ozone, air, /-PrOH, ⁇ -BuOH, and N 2 0.
  • the oxygen source is selected from the group consisting of H 2 0, H 2 0 2, 0 2 , ozone, air, /-PrOH, ⁇ -BuOH, and N 2 0.
  • Embodiment 24 The method of any one of embodiments 20, 21, 22, or 23 further comprising vaporizing at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone, and a combination of any two or more thereof, preferably the at least one co-reactant is a hydrazine ( e.g ., hydrazine (N 2 H 4 ), NN- dimethylhydrazine).
  • a co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone, and a combination of any two or more thereof, preferably the at least one co-reactant is a hydrazine ( e.g ., hydrazine (N 2 H 4 ), NN- dimethylhydrazine).
  • Embodiment 25 The method of any one of embodiments 20, 21, 22, 23 or 24, wherein the method is used for a DRAM or CMOS application.
  • Example 9 ALD of Sc ? C film using complex 4 (Sc(MeCp)?(3.5-dimethyl- pyrazolate) and water
  • Sc(MeCp) 2 (3,5-dimethyl-pyrazolate) was heated to 100-1 l5°C in a stainless steel bubbler and delivered into an ALD reactor using about 20 seem of nitrogen as the carrier gas, and pulsed for about 2 seconds followed by a -28-58 second purge. A pulse of water vapor ( 1 second) was then delivered from a room temperature cylinder of water followed by a 60-second nitrogen purge. A needle valve was present between the deposition chamber and the water cylinder, and was adjusted so as to have an adequate water vapor dose. The scandium oxide was deposited at about l75-300°C for up to 300 cycles onto silicon chips having a thin layer of native oxide, Si0 2 .
  • the film was cooled down in the reactor to about 60°C under vacuum with nitrogen purge before unloading. Film thicknesses in the range of 60-260A were obtained, and preliminary results show a growth rate of -1 Angstrom/cycle.
  • XPS X-ray Photoelectron Spectroscopy
  • the XPS data in Figures 1-14 shows the films have no more than 1 % of any element except the desired scandium and oxygen once the surface contamination has been removed by sputtering. In the bulk, only Sc and O were detected, and the stoichiometry measured matched the theoretical composition of Sc 2 0 3 .
  • Example 10 ALD of Y ? CL film using complex 12 ([Y(MeCp)?(3,5-MePn-C ⁇ HN?)]?)
  • [00149] [Y(MeCp) 2 (3,5-MePn-C 3 HN 2 )] 2 was heated to l30-l 80°C in a stainless steel bubbler, delivered into a cross-flow ALD reactor using nitrogen as a carrier gas and deposited by ALD using water.
  • H 2 0 was delivered by vapor draw from a stainless steel ampule at room temperature.
  • Silicon chips having a native Si0 2 layer in the range of 14- nA thick were used as substrates.
  • As-deposited films were used for thickness and optical property measurements using an optical ellipsometer. Selected samples were analyzed by XPS for film composition and impurity concentrations.
  • ALD reactor using 20 seem of nitrogen as the carrier gas, and pulsed for 7 seconds from a bubbler followed by a 20 second of N 2 purge, followed by a 0.015 second pulse of H 2 0 and 90 second of N 2 purge in each ALD cycle, and deposited at multiple temperatures from 125 to 250°C for 200 or more cycles. As-deposited films were cooled down in the reactor to ⁇ 80°C under nitrogen purge before unloading. Film thickness in the range of 150 to 420 A was deposited. Growth rate per cycle data at a fixed reactor inlet position were plotted in Figure 15.
  • the curve in Figure 15 indicates that the growth rate of Y 2 0 3 from an un optimized H 2 0 ALD process appeared to be temperature dependent under the same deposition conditions. The higher the temperature, the higher the growth rate. Further tests revealed that the growth rate at higher temperatures appeared to be affected by the H 2 0 purge time, which may be due to initial formation of Y(OH) 3 and/or strong absorption of H 2 0 by the Y 2 0 3 film at higher temperatures. For example, no saturation was reached even after 120 seconds of H 2 0 purge at 200°C, while its dependence on the H 2 0 purge time is much smaller at ⁇ l50°C or lower as shown in Figure 16.
  • [00152] [Y(MeCp) 2 (3,5-MePn-C 3 HN 2 )] 2 was heated to l70-l76°C, delivered into an ALD reactor using 20 seem of nitrogen as the carrier gas, and pulsed from 3 to 13 seconds from a bubbler to generate various precursor doses, followed by a 60 second of N 2 purge, then by a 0.015 second pulse of H 2 0 and 30 second of N 2 purge in each ALD cycle, and deposited at 135 °C for 350 cycles.
  • the film thickness was monitored at 3 different positions in the cross-flow reactor along the precursor/carrier gas flow direction, the precursor inlet, the reactor center, and precursor outlet. Growth rate per cycle data are plotted in Figure 17.

Abstract

Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.

Description

METAL COMPLEXES CONTAINING C Y CLOPENTADIENYL LIGANDS
FIELD OF THE INVENTION
[0001] The present technology relates generally to metal complexes including cyclopentadienyl ligands, methods of preparing such complexes and methods of preparing metal-containing thin films using such complexes.
BACKGROUND
[0002] Various precursors are used to form thin films and a variety of deposition techniques have been employed. Such techniques include reactive sputtering, ion-assisted deposition, sol-gel deposition, chemical vapor deposition (CVD) (also known as metalorganic CVD or MOCVD), and atomic layer deposition (ALD) (also known as atomic layer epitaxy). CVD and ALD processes are increasingly used as they have the advantages of enhanced compositional control, high film uniformity, and effective control of doping. Moreover, CVD and ALD processes provide excellent conformal step coverage on highly non-planar geometries associated with modern microelectronic devices.
[0003] CVD is a chemical process whereby precursors are used to form a thin film on a substrate surface. In a typical CVD process, the precursors are passed over the surface of a substrate ( e.g a wafer) in a low pressure or ambient pressure reaction chamber. The precursors react and/or decompose on the substrate surface creating a thin film of deposited material. Volatile by-products are removed by gas flow through the reaction chamber. The deposited film thickness can be difficult to control because it depends on coordination of many parameters such as temperature, pressure, gas flow volumes and uniformity, chemical depletion effects, and time.
[0004] ALD is also a method for the deposition of thin films. It is a self-limiting, sequential, unique film growth technique based on surface reactions that can provide precise thickness control and deposit conformal thin films of materials provided by precursors onto surfaces substrates of varying compositions. In ALD, the precursors are separated during the reaction. The first precursor is passed over the substrate surface producing a monolayer on the substrate surface. Any excess unreacted precursor is pumped out of the reaction chamber. A second precursor is then passed over the substrate surface and reacts with the first precursor, forming a second monolayer of film over the first-formed monolayer of film on the substrate surface. This cycle is repeated to create a film of desired thickness.
[0005] Thin films, and in particular thin metal-containing films, have a variety of important applications, such as in nanotechnology and the fabrication of semiconductor devices. Examples of such applications include high-refractive index optical coatings, corrosion-protection coatings, photocatalytic self-cleaning glass coatings, biocompatible coatings, dielectric capacitor layers and gate dielectric insulating films in field-effect transistors (FETs), capacitor electrodes, gate electrodes, adhesive diffusion barriers, and integrated circuits. Dielectric thin films are also used in microelectronics applications, such as the high-k dielectric oxide for dynamic random access memory (DRAM) applications and the ferroelectric perovskites used in infrared detectors and non-volatile ferroelectric random access memories (NV-FeRAMs). The continual decrease in the size of microelectronic components has increased the need for improved thin film technologies.
[0006] Technologies relating to the preparation of scandium-containing and yttrium-containing thin films (e.g., scandium oxide, yttrium oxide, etc.) are of particular interest. For example, scandium-containing films have found numerous practical applications in areas such as catalysts, batteries, memory devices, displays, sensors, and nano- and microelectronics and semiconductor devices. In the case of electronic applications, commercial viable deposition methods using scandium-containing and yttrium-containing precursors having suitable properties including volatility, low melting point, reactivity and stability are needed. However, there are a limited number of available scandium-containing and yttrium-containing compounds which possess such suitable properties. Accordingly, there exists significant interest in the development of scandium and yttrium complexes with performance characteristics which make them suitable for use as precursor materials in vapor deposition processes to prepare scandium- containing and yttrium-containing films. For example, scandium-containing and yttrium- containing precursors with improved performance characteristics (e.g., thermal stabilities, vapor pressures, and deposition rates) are needed, as are methods of depositing thin films from such precursors. SUMMARY
[0007] According to one aspect, a metal complex of Formula 1 is provided:
[(R^nCp^M'L1 (I), wherein M1 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R1 is independently hydrogen, Ci-C5-alkyl or silyl; n is 1 , 2, 3, 4, or 5; Cp is cyclopentadienyl ring; and L1 is selected from the group consisting of: NR2R3; N(SiR4R5R6)2; 3,5-R7R8-C3HN2; l-(R32)C3H4; l -R33-3-R34-C3H3; and R35,R36-C3H02; wherein R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or Ci-Cs-alkyl; and R32, R33, R34, R35, and R36 are each independently alkyl or silyl; wherein when M1 is yttrium and L1 is 3,5- R7R8-C3HN2, R1 is Ci-C5-alkyl or silyl; and wherein when M1 is yttrium and L1 is N(SiR4R5R6)2, n is 1 , 2, 3, or 4.
[0008] In other aspects, a metal complex of Formula II is provided:
[((R9)nCp)2M2L2]2 (II), wherein M2 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R9 is independently hydrogen or C i-C -alkyl; n is 1, 2, 3, 4 or 5; Cp is cyclopentadienyl ring; and L2 is selected from the group consisting of: Cl, F, Br, I, and 3,5-R10RM-C3HN2; wherein R10 and R1 1 are each independently hydrogen or C - C5-alkyl; wherein when M is scandium and L is Cl, R is Ci-Cs-alkyl.
[0009] In other aspects, methods of forming metal-containing films by vapor deposition, such as CVD and ALD, are provided herein. The method comprises vaporizing at least one metal complex corresponding in structure to Formula 1: (RlCp)2MlLl (I), wherein M1 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R1 is independently hydrogen, Ci-Cs-alkyl or silyl; Cp is cyclopentadienyl ring; and L is selected from the group consisting of: NR R ; N(SiR- 4R5R6)2; 3,5-R7R8-C3HN2; l-(R32)C3H4; l-R33-3-R34-C3H3; and R35,R36-C3H02; wherein R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or Ci-C5-alkyl; and R32, R33, R34, R35, and R36 are each independently alkyl or silyl.
[0010] Other embodiments, including particular aspects of the embodiments summarized above, will be evident from the detailed description that follows. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Fig. 1 illustrates XPS (X-ray Photoelectron Spectroscopy) analysis of
Sc203 films using Sc(MeCp)2(3,5-dimethyl-pyrazolate).
[0012] Fig. 2 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0013] Fig. 3 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0014] Fig. 4 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate.
[0015] Fig. 5 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0016] Fig. 6 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0017] Fig. 7 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0018] Fig. 8 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0019] Fig. 9 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0020] Fig. 10 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0021] Fig. 1 1 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- di methyl-pyrazolate) .
[0022] Fig. 12 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate). [0023] Fig. 13 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl-pyrazolate).
[0024] Fig. 14 illustrates XPS analysis of Sc203 films using Sc(MeCp)2(3,5- dimethyl -pyrazolate) .
[0025] Fig. 15 illustrates dependence of ALD Y203 growth rate per cycle on the deposition temperature when depositing [Y(MeCp)2(3,5-MePn-C3HN2)]2.
[0026] Fig. 16 illustrates dependence of ALD Y203 growth rate per cycle on H20 purge time when depositing [Y(MeCp)2(3,5-MePn-C3HN2)]2 at l25°C, l50°C and 200°C.
[0027] Fig. 17 illustrates ALD Y203 growth rate per cycle at 3 different positions in a cross-flow reactor along the precursor/carrier gas flow direction, the precursor inlet, the reactor center, and precursor outlet.
DETAILED DESCRIPTION
[0028] Before describing several exemplary embodiments of the present technology, it is to be understood that the technology is not limited to the details of construction or process steps set forth in the following description. The present technology is capable of other embodiments and of being practiced or being carried out in various ways. It is also to be understood that the metal complexes and other chemical compounds may be illustrated herein using structural formulas which have a particular stereochemistry. These illustrations are intended as examples only and are not to be construed as limiting the disclosed structure to any particular stereochemistry. Rather, the illustrated structures are intended to encompass all such metal complexes and chemical compounds having the indicated chemical formula.
[0029] In various aspects, metal complexes, methods of making such metal complexes, and methods of using such metal complexes to form thin metal-containing films via vapor deposition processes, are provided.
[0030] As used herein, the terms“metal complex” (or more simply,“complex”) and “precursor” are used interchangeably and refer to metal-containing molecule or compound which can be used to prepare a metal-containing film by a vapor deposition process such as, for example, ALD or CVD. The metal complex may be deposited on, adsorbed to, decomposed on, delivered to, and/or passed over a substrate or surface thereof, as to form a metal-containing film. In one or more embodiments, the metal complexes disclosed herein are nickel complexes.
[0031] As used herein, the term“metal-containing film” includes not only an elemental metal film as more fully defined below, but also a film which includes a metal along with one or more elements, for example a metal oxide film, metal nitride film, metal silicide film, and the like. As used herein, the terms“elemental metal film” and“pure metal film” are used interchangeably and refer to a film which consists of, or consists essentially of, pure metal. For example, the elemental metal film may include 100% pure metal or the elemental metal film may include at least about 90%, at least about 95%, at least about 96%, at least about 97%, at least about 98%, at least about 99%, at least about 99.9%, or at least about 99.99% pure metal along with one or more impurities. Unless context dictates otherwise, the term“metal film” shall be interpreted to mean an elemental metal film. In some embodiments, the metal-containing film is an elemental scandium or yttrium film. In other embodiments, the metal-containing film is scandium oxide, yttrium oxide, scandium nitride, yttrium nitride, scandium silicide or yttrium silicide film. Such scandium-containing and yttrium-containing films may be prepared from various scandium and yttrium complexes described herein.
[0032] As used herein, the term“vapor deposition process” is used to refer to any type of vapor deposition technique, including but not limited to, CVD and ALD. In various embodiments, CVD may take the form of conventional ( i.e ., continuous flow) CVD, liquid injection CVD, or photo-assisted CVD. CVD may also take the form of a pulsed technique, i.e., pulsed CVD. In other embodiments, ALD may take the form of conventional (i.e., pulsed injection) ALD, liquid injection ALD, photo-assisted ALD, plasma-assisted ALD, or plasma-enhanced ALD. The term“vapor deposition process” further includes various vapor deposition techniques described in Chemical Vapour Deposition: Precursors, Processes, and Applications, Jones, A. C.; Hitchman, M. L., Eds. The Royal Society of Chemistry: Cambridge, 2009; Chapter 1, pp 1-36.
[0033] The term“alkyl” (alone or in combination with another term(s)) refers to a saturated hydrocarbon chain of 1 to about 12 carbon atoms in length, such as, but not limited to, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, decyl, and so forth. The alkyl group may be straight-chain or branched-chain. “Alkyl” is intended to embrace all structural isomeric forms of an alkyl group. For example, as used herein, propyl encompasses both n-propyl and isopropyl; butyl encompasses rc-butyl, sec-butyl, isobutyl and /er/-butyl; pentyl encompasses n-pentyl, / -pentyl, neopentyl, isopentyl, sec-pentyl and 3-pentyl. Further, as used herein,“Me” refers to methyl,“Et” refers to ethyl,“Pr” refers to propyl,“-Pr” refers to isopropyl,“Bu” refers to butyl,“/-Bu” refers to /er/-butyl, “iBu” refers to isobutyl, “Pn” refers to and “NPn” refers to neopentyl. In some embodiments, alkyl groups are C1-C5- or Ci-C4-alkyl groups.
[0034] The term“allyl” refers to an allyl (C3H5) ligand which is bound to a metal center. As used herein, the allyl ligand has a resonating double bond and all three carbon atoms of the allyl ligand are bound to the metal center in r -coordination by p bonding. Therefore, the complexes of the invention are p complexes. Both of these features are represented by the dashed bonds. When the allyl portion is substituted by one X group, the X1 group replaces an allylic hydrogen to become [X’C3H4]; when substituted with two X groups X1 and X2, it becomes [X'X2C3H3] where X1 and X2 are the same or different, and so forth.
[0035] The term“silyl” refers to a— SiZ'Z2Z3 radical, where each of Z1, Z2, and
Z3 is independently selected from the group consisting of hydrogen and optionally substituted alkyl, alkenyl, alkynyl, aryl, alkoxy, aryloxy, amino, and combinations thereof.
[0036] The term“trialkylsilyl” refers to a— SiZ4Z5Z6 radical, wherein Z5, Z6, and
Z7 are alkyl, and wherein Z5, Z6, and Z7 can be the same or different alkyls. Non-limiting examples of a trialkylsilyl include trimethylsilyl (TMS), triethylsilyl (TES), triisopropylsilyl (TIPS) and /cr/-butyldimethylsilyl (TBDMS).
[0037] Deposition of some metals, including scandium and yttrium, can be difficult to achieve due to thermal stability issues, being either unstable or too stable for deposition. The organometallic complexes disclosed in the embodiments of the invention allow for control of physical properties as well as provide for increased stability and simple high yield synthesis. In this regard, the metal complexes provided herein are excellent candidates for preparation of thin metal-containing films in various vapor deposition processes. [0038] Therefore, according to one aspect, a metal complex of Formula I is provided: [(Rl)nCp]2MlLl (I), wherein M1 is a Group 3 metal or a lanthanide; each R1 is independently hydrogen, Ci-Cs-alkyl or silyl; n is 1, 2, 3, 4, or 5; Cp is cyclopentadienyl ring; and L1 is selected from the group consisting of: NR2R3; N(SiR4R5R6)2; 3,5-R7R8- C3HN2; l-( R32)C3H4; l-R33-3-R34-C3H3; R35,R36-C3H02; R12N=C-C-NR13; R14R15N-CH2- CH2-NRI6-CH2-CH2-NR17R18; and Rl9O-CH2-CH2-NR20-CH2-CH2-OR21 ; wherein R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 are each independently hydrogen or Ci-Cs-alkyl and R32, R33, R34, R35, and R36 are each independently alkyl or silyl.
[0039] In some embodiments, M1 may be selected from the group consisting of scandium, yttrium and lanthanum. In other embodiments, M1 may be selected from the group consisting of scandium and yttrium. In particular, M1 may be scandium.
[0040] In other embodiments, when M 1 is yttrium and L1 is 3,5-R7R8-C3HN2, R1 is
C|-C5-alkyl or silyl and/or wherein when M1 is yttrium and L1 is N(SiR4R5R6)2, n is 1, 2, 3, or 4.
[0041] In some embodiments, L1 is selected from the group consisting of: NR2R3;
N(SiR4R5R6)2; 3,5-R7R8-C3HN2; l -( R32)C3H4; l -R33-3-R34-C3H3, and R35,R36-C3H02.
[0042] In some embodiments, L1 is selected from the group consisting of: NR2R3;
N(SiR4R5R6)2; 3,5-R7R8-C3HN2; l -(SiMe3)C3H4 (trimethyl silylallyl); 1 ,3-bis-
(SiMe3)2C3H3(bis-trimethyl silylallyl), 6-methyl-2,4-heptanedionate.
[0043] R1, at each occurrence, can be the same or different. For example, if n is 2,
3, 4, or 5, each R1 may all be hydrogen or all be an alkyl ( e.g ., Ci-C5-alkyl) or all be silyl. Alternatively, if n is 2, 3, 4, or 5, each R1 may be different. For example if n is 2, a first R1 may be hydrogen and a second R1 may be an alkyl (e.g., Ci-Cs-alkyl) or silyl.
[0044] R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21, at each occurrence, can be the same or different. For example, R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 may all be hydrogen or all be an alkyl (e.g., Ci-C5-alkyl). [0045] In one embodiment, up to and including sixteen of R2, R3, R4, R5, R6, R7,
R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 may each be hydrogen. For example, at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of, at least twelve of, at least thirteen of, at least fourteen of, at least fifteen of, or at least sixteen of R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 may be hydrogen.
[0046] In another embodiment, up to and including sixteen of R2, R3, R4, R5, R6,
R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may be an alkyl. For example, at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of, at least twelve of, at least thirteen of, at least fourteen of, at least fifteen of, or at least sixteen of R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 may be an alkyl.
[0047] R32, R33, and R34 at each occurrence, can be the same or different. For example, R32, R33, and R34 may all be an alkyl (e.g., Ci-Cs-alkyl) or may all be silyl (e.g. , SiMe3).
[0048] R35 and R36 at each occurrence, can be the same or different. For example,
R35 and R36 may all be the same or different alkyl ( e.g . , -Cs-alkyl), R35 and R36 may all be the same or different silyl (e.g. , SiMe3) or R35 and R36 may be an alkyl (e.g. , C 1-C5- alkyl) and a silyl (e.g. , SiMe3).
[0049] In one embodiment, up to and including two of R32, R33, R34, R35, and R36
32 33 each independently may be alkyl. For example, at least one of or at least two of R , R , R34, R35, and R36 may be an alkyl.
[0050] In another embodiment, up to and including two of R32, R33, R34, R35, and
R each independently may be silyl. For example, at least one of or at least two of R , R33, R34, R35, and R36 may be an silyl.
[0051] The alkyl groups discussed herein can be Ci-Cg-alkyl, C|-C7-alkyl, C |-C6- alkyl, Ci-C5-alkyl, Ci-C4-alkyl, Ci-C3-alkyl, C |-C2-alkyl or Ci-alkyl. In a further embodiment, the alkyl is Ci-Cs-alkyl, Ci-C4-alkyl, Ci-C3-alkyl, Ci-C2-alkyl or -alkyl. The alkyl group may be straight-chained or branch. In particular, the alkyl is straight- chained. In a further embodiment the alkyl is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, /ert-butyl, pentyl, and neopentyl.
[0052] The silyl group discussed herein can be, but is not limited to Si(alkyl)3,
Si(alkyl)2H, andSi(alkyl)H2, wherein the alkyl is as described above. Examples of the silyl include, but are not limited to SiH3, SiMeH2, SiMe2H, SiMe3 SiEtH2, SiEt2H, SiEt3 SiPrH2, SiPr2H, SiPr3, SiBuH2, SiBu2H, SiBu3, where “Pr” includes /-Pr and “Bu” includes /-Bu.
[0053] ln some embodiments, each R1 independently may be hydrogen, C1-C4- alkyl or silyl. In another embodiment, each R1 independently may be hydrogen, methyl, ethyl, propyl or silyl. In another embodiment, each R1 independently may be hydrogen, methyl, or ethyl. In particular, each R1 may be methyl.
[0054] In some embodiments, R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16,
R17, R18, R19, R20, and R21 each independently may be hydrogen or C |-C4-alkyl. In other embodiments, R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may be hydrogen, methyl, ethyl or propyl. In other embodiments, R , R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may hydrogen, methyl, or ethyl. In particular, R , R , R , R , R , R , R , R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may be hydrogen or methyl.
[0055] In some embodiments, each R1 independently may be hydrogen, C|-C4- alkyl or silyl; and R2, R3, R4, R5, R6, R7, R8, R9, R10, R1 1 , R12, R13, R14, R15, R16, R17, and Rl 8 each independently may be hydrogen or Ci-C4-alkyl.
[0056] In other embodiments, each R1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, Ri 8, R19, R20, and R21 each independently may be hydrogen, methyl, ethyl or propyl. [0057] In some embodiments, each R1 independently may be hydrogen, methyl, or ethyl; and R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may be hydrogen, methyl, or ethyl. In another embodiment, each R1 may be methyl and R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 each independently may be hydrogen or methyl.
[0058] In some embodiments, R32, R33, R34, R35, and R36 each independently may be Ci-Cs-alkyl or silyl. In other embodiments, R32, R33, R34, R35, and R36 each independently may be C |-C4-alkyl or silyl. In other embodiments, R32, R33, R34, R35, and R each independently may be methyl, ethyl, propyl or silyl. In other embodiments, R , R33, R34, R35, and R36 each independently may be methyl, ethyl or silyl. In other embodiments,
Figure imgf000012_0001
R , and R each independently may silyl, such as but not limited to, SiH3, SiMeH2, SiMe2H, SiMe3, SiEtH2, SiEt2H, SiEt3 SiPrH2, SiPr2H, SiPr3, SiBuH2, SiBu2H, SiBu3. In particular, R32, R33, R34, R35, and R36 each independently may be SiMe3. In particular, R32, R33, and R34, each independently may be SiMe3. In other embodiments, R35and R36 may each independently be C -C4-alkyl, particularly methyl and/or butyl.
[0059] In some embodiments, L1 is selected from the group consisting of: NR2R3;
N(SiR4R5R6)2; l -( R32)C3H4; and l -R33-3-R34-C3H3.
[0060] In another embodiment, L1 may be selected from the group consisting of:
NR2R3; N(SiR4R5R6)2; l -(SiMe3)C3H4; l ,3-bis-(SiMe3)2C3H3; and R35,R36-C3H02.
[0061] In another embodiment, each R1 independently may be hydrogen, C -C4- alkyl or silyl; and L1 is NR2R3, wherein R2 and R3 each independently may be hydrogen or Ci-C4-alkyl. In another embodiment, each R1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R2 and R3 each independently may be hydrogen, methyl, ethyl or propyl. In another embodiment, each R1 independently may be hydrogen, methyl, or ethyl; and R2 and R3 each independently may be hydrogen, methyl, or ethyl. In particular, each R1 may be methyl; and R2 and R3 each independently may be hydrogen, methyl, or ethyl.
[0062] In another embodiment, each R1 independently may be hydrogen, Ci-C4- alkyl or silyl; and L1 is N(SiR4R5R6)2, wherein R4, R5, and R6 each independently may be hydrogen or C|-C4-alkyl. In another embodiment, each R1 independently may be hydrogen, methyl, ethyl, propyl or silyl; and R4, R5, and R6 each independently may be hydrogen, methyl, ethyl or propyl. In another embodiment, each R1 independently may be hydrogen, methyl, or ethyl; and R4, R5, and R6 each independently may be hydrogen, methyl, or ethyl. In particular, each R1 may be methyl; and R4, R5, and R6 each independently may be hydrogen, methyl, or ethyl.
[0063] In some embodiments, each R1 independently may be hydrogen, Ci-C4- alkyl or silyl; and L1 may be 3,5-R7R8-C3HN2, wherein R7 and R8 each independently may be hydrogen or Ci-Cs-alkyl. In other embodiments, each R1 independently may be hydrogen, methyl, ethyl, propyl or silyl. In other embodiments, each R1 independently may be hydrogen, methyl, or ethyl. In particular, each R1 may be methyl. In other embodiments, R and R each independently may be hydrogen or Ci-C4-alkyl or hydrogen. In other embodiments, R and R each independently may be methyl, ethyl, propyl or hydrogen. In particular, R7 and R8 each independently may be methyl or ethyl.
[0064] In some embodiments, each R1 independently may be hydrogen, C|-C4- alkyl or silyl; and L1 may be l-( R32)C3H4, wherein R32 may be Ci-Cs-alkyl or silyl. In another embodiment, R32 may be Ci-C4-alkyl or silyl. In other embodiments, each R1 independently may be hydrogen, methyl, ethyl or silyl and R32 may be silyl. In another embodiment, each R independently may be hydrogen, methyl or ethyl and R may be a silyl, such as but not limited to, SiH3, SiMeH2, SiMe2H, SiMe3 SiEtH2, SiEt2H, SiEt3 SiPrH2, SiPr2H, SiPr3, SiBuH2, SiBu2H, SiBu3. In particular, each R1 independently may be methyl or ethyl and R32 may be SiMe3.
[0065] In other embodiments, each R1 independently may be hydrogen, Ci-C4- alkyl or silyl; and L1 may
Figure imgf000013_0001
wherein R33 and R34 may be Ci-C5-alkyl or silyl. In another embodiment, each R1 independently may be hydrogen, methyl, ethyl or silyl and R33 and R34 may each independently be Ci-C4-alkyl or silyl and R32 may be silyl. ln another embodiment, each R1 independently may be hydrogen, methyl or ethyl and R33 and R34 may each independently be a silyl, such as but not limited to, SiH3, SiMeH2, SiMe2H, SiMe3, SiEtH2, SiEt2H, SiEt3, SiPrH2, SiPr2H, SiPr3, SiBuH2, SiBu2H, SiBu3. In particular, each R1 independently may be methyl or ethyl and R33 and R34 may be SiMe3. [0066] In other embodiments, each R1 independently may be hydrogen, C1-C4- alkyl or silyl; and L1 may be R35,R36-C3H02, wherein R35 and R36 may be Ci-C5-alkyl or silyl. In another embodiment, each R1 independently may be hydrogen, methyl, ethyl or silyl and R35 and R36 may each independently be Ci-C4-alkyl or silyl. In another embodiment, each R1 independently may be hydrogen, methyl or ethyl and R35 and R36 may each independently be a silyl, such as but not limited to, SiH3, SiMeH2, SiMe2H, SiMe3, SiEtH2, SiEt2H, SiEt3, SiPrH2, SiPr H, SiPr3, SiBuH2, SiBu2H, SiBu3. In another embodiment, each R1 independently may be hydrogen, methyl or ethyl and R35 and R36 may each independently be Ci-C4-alkyl, particularly methyl and/or butyl. In particular, each R1 independently may be methyl or ethyl and R35 and R36 may independently each be methyl or butyl. In particular, each R1 independently may be methyl or ethyl and R35 and R36 may be SiMe3.
[0067] Examples of metal complexes corresponding in structure to Formula I are provided in Table 1.
Table 1
Figure imgf000014_0001
Figure imgf000015_0001
[0068] In one embodiment, a mixture of two or more organometallic complexes of
Formula I is provided.
[0069] In another embodiment, a metal complex of Formula II is provided: [((R9)nCp)2M2L2]2 (II), wherein M2 is a Group 3 metal or a lanthanide; each R9 is independently hydrogen or Ci-C5-alkyl; n is 1, 2, 3, 4 or 5; Cp is cyclopentadienyl ring; and L2 is selected from the group consisting of: Cl; F; Br; I; 3,5-R10Rn-C3HN2; R22N=C- C-NR23; R24R25N-CH2-NR26-CH2-NR27R28, and R29O-CH2-NR30-CH2-OR31 ; wherein R10, R1 1, R22, R23, R24, R25, R26, R27, R28, R29, R30, and R31 are each independently hydrogen or C,-C5-alkyl.
[0070] In some embodiments, M2 may be selected from the group consisting of scandium, yttrium and lanthanum. In other embodiments, M may be selected from the group consisting of scandium and yttrium. In particular, M may be scandium.
2 2 9
[0071] In other embodiments, wherein when M is scandium and L is Cl, R is C- i-Cs-alkyl.
[0072] In some embodiments, L2 is selected from the group consisting of: Cl; F;
Br; I; and 3,5-R10Rn-C3HN2
[0073] R9, at each occurrence, can be the same or different. For example, if n is 2,
3, 4, or 5, each R9 may all be hydrogen or all be an alkyl ( e.g ., Ci-Cs-alkyl). Alternatively, if n is 2, 3, 4, or 5, each R1 may be different. For example if n is 2, a first R9 may be hydrogen and a second R9 may be an alkyl (e.g., Ci-C5-alkyl). [0074] R10, R1 1, R22, R23, R24, R25, R26, R27, R28, R29, R30, and R31, at each occurrence, can be the same or different. For example, R10, R1 1, R22, R23, R24, R25, R26, R27, R28, R29, R30, and R31 may all be hydrogen or all be an alkyl ( e. g ., Ci-C5-alkyl).
[0075] In one embodiment, up to and including eleven of R10, R1 1, R22, R23, R24,
R25, R26, R27, R28, R29, R30, and R31 may each be hydrogen. For example, at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of R , R , R , R , R25, R26, R27, R28, R29, R30, and R31 may be hydrogen.
[0076] In another embodiment, up to and including eleven of R10, R1 1, R22, R23,
R24, R25, R26, R27, R28, R29, R30, and R31 each independently may be an alkyl. For example, at least one of, at least two of, at least three of, at least four of or at least five of, at least six of, at least seven of, at least eight of, at least nine of, at least ten of, at least eleven of R10, R1 1, R22, R23, R24, R25, R26, R27, R28, R29, R30, and R31 may be an alkyl.
[0077] The alkyl groups discussed herein can be C|-C8-alkyl, Ci-C7-alkyl, C|-C6- alkyl, Ci-C5-alkyl, Ci-C4-alkyl, Ci-C3-alkyl, Ci-C2-alkyl or Ci-alkyl. In a further embodiment, the alkyl is C|-Q;-alkyl, C|-C4-alkyl, Ci-C3-alkyl, Ci-C2-alkyl or Ci-alkyl. The alkyl group may be straight-chained or branch. In particular, the alkyl is straight- chained. In a further embodiment the alkyl is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, /er/-butyl, pentyl, and neopentyl.
[0078] In some embodiments, each R9 independently may be Ci-Cs-alkyl. In other embodiments, each R9 independently may be hydrogen or Ci-C4-alkyl. In another embodiment, each R9 independently may be hydrogen, methyl, ethyl, or propyl. In another embodiment, each R9 independently may be hydrogen, methyl, or ethyl ln particular, each R9 may be methyl.
[0079] ln a particular embodiment, M may be scandium and each R independently may be a Ci-C4-alkyl. In another embodiment, M2 may be scandium, L2 may be Cl and each R9 independently may be methyl, ethyl or propyl. In particular, each R9 may independently be methyl or ethyl. [0080] In another particular embodiment, M 2 may be yttrium and each R 9 independently may be a Ci-C4-alkyl. In another embodiment, M may be yttrium, L may be 3,5-Rl0Rn-C3HN2, each R9 independently may be methyl, ethyl or propyl and R10 and R9 each independently may be a Ci-C5-alkyl. In particular, each R9 independently may be methyl or ethyl.
[0081] Examples of metal complexes corresponding in structure to Formula II are provided in Table 2.
Table 2
Figure imgf000017_0002
[0082] Additional other metal complexes provided herein include Y(MeCp)2(3,5- tBu2-C3HN2)(THF), Y (MeCp)2(3,5-MePn-C3HN2)(THF), and Y(MeCp)2(3,5-tBu, iBu- C3HN2)(THF). AS used herein,“THF” refers to tetrahydrofuran
[0083] The metal complexes provided herein may be prepared, for example, as shown below in Scheme A.
MCI3 + 2KCp(Rn)
Figure imgf000017_0001
Scheme A
[0084] The metal complexes provided herein may be used to prepare metal- containing films such as, for example, elemental scandium, elemental yttrium, scandium oxide, yttrium oxide, scandium nitride, yttrium nitride and scandium silicide and yttrium silicide films. Thus, according to another aspect, a method of forming a metal-containing film by a vapor deposition process is provided. The method comprises vaporizing at least one organometallic complex corresponding in structure to Formula I, Formula II, or a combination thereof, as disclosed herein. For example, this may include ( 1) vaporizing the at least one complex and (2) delivering the at least one complex to a substrate surface or passing the at least one complex over a substrate (and/or decomposing the at least one complex on the substrate surface).
[0085] A variety of substrates can be used in the deposition methods disclosed herein. For example, metal complexes as disclosed herein may be delivered to, passed over, or deposited on a variety of substrates or surfaces thereof such as, but not limited to, silicon, crystalline silicon, Si(l00), Si(l 1 1), silicon oxide, glass, strained silicon, silicon on insulator (SOI), doped silicon or silicon oxide(s) ( e.g ., carbon doped silicon oxides), silicon nitride, germanium, gallium arsenide, tantalum, tantalum nitride, aluminum, copper, ruthenium, titanium, titanium nitride, tungsten, tungsten nitride, and any number of other substrates commonly encountered in nanoscale device fabrication processes (e.g., semiconductor fabrication processes). As will be appreciated by those of skill in the art, substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface. In one or more embodiments, the substrate surface contains a hydrogen-terminated surface.
[0086] In certain embodiments, the metal complex may be dissolved in a suitable solvent such as a hydrocarbon or an amine solvent to facilitate the vapor deposition process. Appropriate hydrocarbon solvents include, but are not limited to, aliphatic hydrocarbons, such as hexane, heptane and nonane; aromatic hydrocarbons, such as toluene and xylene; and aliphatic and cyclic ethers, such as diglyme, triglyme, and tetraglyme. Examples of appropriate amine solvents include, without limitation, octylamine and /V/V-dimethyldodecylamine. For example, the metal complex may be dissolved in toluene to yield a solution with a concentration from about 0.05 M to about 1 M.
[0087] In another embodiment, the at least one metal complex may be delivered
“neat” (undiluted by a carrier gas) to a substrate surface.
[0088] In one embodiment, the vapor deposition process is chemical vapor deposition. [0089] ln another embodiment, the vapor deposition process is atomic layer deposition.
[0090] The ALD and CVD methods encompass various types of ALD and CVD processes such as, but not limited to, continuous or pulsed injection processes, liquid injection processes, photo-assisted processes, plasma-assisted, and plasma-enhanced processes. For purposes of clarity, the methods of the present technology specifically include direct liquid injection processes. For example, in direct liquid injection CVD (“DLI-CVD”), a solid or liquid metal complex may be dissolved in a suitable solvent and the solution formed therefrom injected into a vaporization chamber as a means to vaporize the metal complex. The vaporized metal complex is then transported/delivered to the substrate surface. In general, DLI-CVD may be particularly useful in those instances where a metal complex displays relatively low volatility or is otherwise difficult to vaporize.
[0091] In one embodiment, conventional or pulsed CVD is used to form a metal- containing film vaporizing and/or passing the at least one metal complex over a substrate surface. For conventional CVD processes see, for example Smith, Donald (1995). Thin- Film Deposition: Principles and Practice. McGraw-Hill.
[0092] In one embodiment, CVD growth conditions for the metal complexes disclosed herein include, but are not limited to: a. Substrate temperature: 50 - 600 °C
b. Evaporator temperature (metal precursor temperature): 0 - 200 °C c. Reactor pressure: 0 - l00 Torr
d. Argon or nitrogen carrier gas flow rate: 0 - 500 seem
e. Oxygen flow rate: 0 - 500 seem
f. Hydrogen flow rate: 0 - 500 seem
g. Run time: will vary according to desired film thickness
[0093] In another embodiment, photo-assisted CVD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface. [0094] In a further embodiment, conventional (i.e., pulsed injection) ALD is used to form a metal-containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface. For conventional ALD processes see, for example, George S. M., et al. J. Phys. Chem., 1996, 100, 13121-13131.
[0095] In another embodiment, liquid injection ALD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface, wherein at least one metal complex is delivered to the reaction chamber by direct liquid injection as opposed to vapor draw by a bubbler. For liquid injection ALD processes see, for example, Potter R. J., et al., Chem. Vap. Deposition, 2005, 7/(3), 159-169.
[0096] Examples of ALD growth conditions for metal complexes disclosed herein include, but are not limited to: a. Substrate temperature: 0 - 400 °C
b. Evaporator temperature (metal precursor temperature): 0 - 200 °C c. Reactor pressure: 0 - 100 Torr
d. Argon or nitrogen carrier gas flow rate: 0 - 500 seem
e. Reactive gas flow rate: 0-500 seem
f. Pulse sequence (metal complex/purge/reactive gas/purge): will vary according to chamber size
g. Number of cycles: will vary according to desired film thickness
[0097] In another embodiment, photo-assisted ALD is used to form a metal- containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface. For photo-assisted ALD processes see, for example, U.S. Patent
No. 4,581,249.
[0098] In another embodiment, plasma-assisted or plasma-enhanced ALD is used to form a metal-containing film by vaporizing and/or passing at least one metal complex disclosed herein over a substrate surface.
[0099] In another embodiment, a method of forming a metal-containing film on a substrate surface comprises: during an ALD process, exposing a substrate to a vapor phase metal complex according to one or more of the embodiments described herein, such that a layer is formed on the surface comprising the metal complex bound to the surface by the metal center ( e.g ., nickel); during an ALD process, exposing the substrate having bound metal complex with a co-reactant such that an exchange reaction occurs between the bound metal complex and co-reactant, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate; and sequentially repeating the ALD process and the treatment.
[00100] The reaction time, temperature and pressure are selected to create a metal- surface interaction and achieve a layer on the surface of the substrate. The reaction conditions for the ALD reaction will be selected based on the properties of the metal complex. The deposition can be carried out at atmospheric pressure but is more commonly carried out at a reduced pressure. The vapor pressure of the metal complex should be low enough to be practical in such applications. The substrate temperature should be high enough to keep the bonds between the metal atoms at the surface intact and to prevent thermal decomposition of gaseous reactants. However, the substrate temperature should also be high enough to keep the source materials (i.e., the reactants) in the gaseous phase and to provide sufficient activation energy for the surface reaction. The appropriate temperature depends on various parameters, including the particular metal complex used and the pressure. The properties of a specific metal complex for use in the ALD deposition methods disclosed herein can be evaluated using methods known in the art, allowing selection of appropriate temperature and pressure for the reaction. In general, lower molecular weight and the presence of functional groups that increase the rotational entropy of the ligand sphere result in a melting point that yields liquids at typical delivery temperatures and increased vapor pressure.
[00101] A metal complex for use in the deposition methods will have all of the requirements for sufficient vapor pressure, sufficient thermal stability at the selected substrate temperature and sufficient reactivity to produce a reaction on the surface of the substrate without unwanted impurities in the thin film. Sufficient vapor pressure ensures that molecules of the source compound are present at the substrate surface in sufficient concentration to enable a complete self-saturating reaction. Sufficient thermal stability ensures that the source compound will not be subject to the thermal decomposition which produces impurities in the thin film. [00102] Thus, the metal complexes disclosed herein utilized in these methods may be liquid, solid, or gaseous. Typically, the metal complexes are liquids or solids at ambient temperatures with a vapor pressure sufficient to allow for consistent transport of the vapor to the process chamber.
[00103] In one embodiment, an elemental metal, a metal nitride, a metal oxide, or a metal silicide film can be formed by delivering for deposition at least one metal complex as disclosed herein, independently or in combination with a co-reactant. In this regard, the co-reactant may be deposited or delivered to or passed over a substrate surface, independently or in combination with the at least one metal complex. As will be readily appreciated, the particular co-reactant used will determine the type of metal-containing film is obtained. Examples of such co-reactants include, but are not limited to hydrogen, hydrogen plasma, oxygen, air, water, an alcohol, H202, N20, ammonia, a hydrazine, a borane, a silane, ozone, or a combination of any two or more thereof. Examples of suitable alcohols include, without limitation, methanol, ethanol, propanol, isopropanol, ier/-butanol, and the like. Examples of suitable boranes include, without limitation, hydridic (i.e., reducing) boranes such as borane, diborane, triborane and the like. Examples of suitable silanes include, without limitation, hydridic silanes such as silane, disilane, trisilane, and the like. Examples of suitable hydrazines include, without limitation, hydrazine (N2H4), a hydrazine optionally substituted with one or more alkyl groups (i.e., an alkyl-substituted hydrazine) such as methylhydrazine, tert- butylhydrazine, N,N- or /V,/V'-dimethylhydrazine, a hydrazine optionally substituted with one or more aryl groups (i.e., an aryl-substituted hydrazine) such as phenylhydrazine, and the like.
[00104] In one embodiment, the metal complexes disclosed herein are delivered to the substrate surface in pulses alternating with pulses of an oxygen-containing co-reactant as to provide metal oxide films. Examples of such oxygen-containing co-reactants include, without limitation, H20, H202, 02, ozone, air, /-PrOH, ί-BuOH, or N20.
[00105] In other embodiments, a co-reactant comprises a reducing reagent such as hydrogen. In such embodiments, an elemental metal film is obtained. In particular embodiments, the elemental metal film consists of, or consists essentially of, pure metal. Such a pure metal film may contain more than about 80, 85, 90, 95, or 98% metal. In even more particular embodiments, the elemental metal film is a scandium film or a yttrium film.
[00106] In other embodiments, a co-reactant is used to form a metal nitride film by delivering for deposition at least one metal complex as disclosed herein, independently or in combination, with a co-reactant such as, but not limited to, ammonia, a hydrazine, and/or other nitrogen-containing compounds ( e.g ., an amine) to a reaction chamber. A plurality of such co-reactants may be used. In further embodiments, the metal nitride film is a nickel nitride film.
[00107] ln another embodiment, a mixed-metal film can be formed by a vapor deposition process which vaporizes at least one metal complex as disclosed herein in combination, but not necessarily at the same time, with a second metal complex comprising a metal other than that of the at least one metal complex disclosed herein.
[00108] In a particular embodiment, the methods of the present technology are utilized for applications such as dynamic random access memory (DRAM) and complementary metal oxide semi-conductor (CMOS) for memory and logic applications, on substrates such as silicon chips.
[00109] Any of the metal complexes disclosed herein may be used to prepare thin films of the elemental metal, metal oxide, metal nitride, and/or metal silicide. Such films may find application as oxidation catalysts, anode materials (e.g., SOFC or LIB anodes), conducting layers, sensors, diffusion barriers/coatings, super- and non-superconducting materials/coatings, tribological coatings, and/or, protective coatings. It is understood by one of ordinary skill in the art that the film properties (e.g., conductivity) will depend on a number of factors, such as the metal(s) used for deposition, the presence or absence of co- reactants and/or co-complexes, the thickness of the film created, the parameters and substrate employed during growth and subsequent processing.
[00110] Fundamental differences exist between the thermally-driven CVD process and the reactivity-driven ALD process. The requirements for precursor properties to achieve optimum performance vary greatly. In CVD a clean thermal decomposition of the complex to deposit the required species onto the substrate is critical. However, in ALD such a thermal decomposition is to be avoided at all costs ln ALD, the reaction between the input reagents must be rapid at the surface resulting in formation of the target material on the substrate. However, in CVD, any such reaction between species is detrimental due to their gas phase mixing before reaching the substrate, which could lead to particle formation. In general it is accepted that good CVD precursors do not necessarily make good ALD precursors due to the relaxed thermal stability requirement for CVD precursors. In this invention, Formula I metal complexes possess enough thermal stability and reactivity toward select co-reactants to function as ALD precursors, and they possess clean decomposition pathways at higher temperatures to form desired materials through CVD processes as well. Therefore, the metal complexes described by Formula I are advantageously useful as viable ALD and CVD precursors.
[00111] Reference throughout this specification to "one embodiment," "certain embodiments," "one or more embodiments" or "an embodiment" means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the present technology. Thus, the appearances of the phrases such as "in one or more embodiments," "in certain embodiments," "in one embodiment" or "in an embodiment" in various· places throughout this specification are not necessarily referring to the same embodiment of the present technology. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.
[00112] Although the present technology herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present technology. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and apparatus of the present technology without departing from the spirit and scope of the present technology. Thus, it is intended that the present technology include modifications and variations that are within the scope of the appended claims and their equivalents. The present technology, thus generally described, will be understood more readily by reference to the following examples, which is provided by way of illustration and is not intended to be limiting.
[00113] The invention can additionally or alternatively include one or more of the following embodiments. [00114] Embodiment 1. A metal complex corresponding in structure to Formula I: [(R'lnCp M'L1 (I), wherein M1 is a Group 3 metal or a lanthanide ( e. g ., scandium, yttrium and lanthanum); each R1 is independently hydrogen, -Cs-alkyl or silyl; n is 1 , 2, 3, 4, or 5; Cp is cyclopentadienyl ring; and L1 is selected from the group consisting of: NR2R3; N(SiR4R5R6)2; 3,5-R7R8-C3HN2; l-(R32)C3H4; l-R33-3-R34-C3H3; and R35,R36-C3H02; R12N=C-C-NR13; RI4R15N-CH2-CH2-NR16-CH2-CH2-NRI7R18; and R190-CH2-CH2-NR20- CH2-CH2-OR21 ; wherein R2, R3, R4, R5, R6, R7, R8, R12, R13, R14, R15, R16, R17, R18, R19, R20, and R21 are each independently hydrogen or Ci-Cs-alkyl; and R32, R33, R34, R35, and R36 are each independently alkyl or silyl; optionally, wherein when M1 is yttrium and L1 is 3,5-R7R8-C3HN2, R1 is Ci-C5-alkyl or silyl; and optionally, wherein when M1 is yttrium and L1 is N(SiR4R5R6)2, n is 1 , 2, 3, or 4.
[00115] Embodiment 2. The metal complex of embodiment 1 , wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or Ci-C4-alkyl; and R32, R33, R34, R35, and R36 are each independently Ci-Cs-alkyl or silyl.
[00116] Embodiment 3. The metal complex of embodiment 1 or 2, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl or ethyl, more preferably methyl; and R , R , R , R , R , R , and R are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen methyl or ethyl, more preferably hydrogen or methyl; and R32, R33, R34, R35, and R36 are each independently Ci-C4-alkyl or silyl, preferably methyl, ethyl, propyl or silyl, more preferably SiMe3.
[00117] Embodiment 4. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and L1 is NR2R3, wherein R2 and R3 are each independently hydrogen or C|-C4-alkyl.
[00118] Embodiment 5. The metal complex of embodiment 4, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl; and R2 and R3 are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl or ethyl. [00119] Embodiment 6. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and L1 is N(SiR4R5R6)2, wherein R4, R5, and R6 are each independently hydrogen or C|-C4-alkyl.
[00120] Embodiment 7. The metal complex of embodiment 6, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl; and R4, R5, and R6 are each independently hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl or ethyl.
[00121] Embodiment 8. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, C|-C4-alkyl or silyl; and L1 is 3,5-R7R8-C3HN2, wherein R7 and R8 are each independently hydrogen or Ci-C5-alkyl.
[00122] Embodiment 9. The metal complex of embodiment 8, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl, preferably hydrogen, methyl, or ethyl, more preferably methyl.
[00123] Embodiment 10. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl, preferably hydrogen, methyl, ethyl or silyl; and L1 is l -(R32)C3H4, wherein R32 is Ci-Cs-alkyl or silyl, preferably R is methyl, ethyl or silyl, more preferably L is l -(SiMe3)C3H4 .
[00124] Embodiment 1 1. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl, preferably hydrogen, methyl, ethyl or silyl; and L1 is l -R33-3-R34-C3H3, wherein R33 and R34 are each independently Ci-Cs-alkyl or silyl, preferably R33 and R34 are each independently methyl, ethyl or silyl, more preferably L1 is l,3-bis-(SiMe3)2C3H3.
[00125] Embodiment 12. The metal complex of any one of the previous embodiments, wherein each R1 is independently hydrogen, C|-C4-alkyl or silyl, preferably hydrogen, methyl, ethyl or silyl; and L1 is R35,R36-C3H02, wherein R33 and R36 are each independently Ci-Cs-alkyl or silyl, preferably R35 and R36 are each independently methyl, ethyl, propyl, butyl, or silyl, more preferably L1 is 6-methyl-2,4-heptanedionate, i.e., Me,iBu-C3H02. [00126] Embodiment 13. The metal complex of any one of the previous embodiments, wherein the complex is: Sc(MeCp)2[ l-(SiMe3)C3H4]; Sc(MeCp)2[ l ,3-bis- (SiMe3)2C3H3];Sc(MeCp)2[N(SiMe3)2]; Sc(MeCp)2(3,5-Me2-C3HN2); Sc(MeCp)2(Me,iBu- C3H02), preferably Sc(MeCp)2[ l-(SiMe3)C3H4]; Sc(MeCp)2[ l ,3-bis-
(SiMe3)2C3H3] ;Sc(MeCp)2[N(SiMe3)2] ; and Sc(MeCp)2(3,5-Me2-C3HN2).
[00127] Embodiment 14. A metal complex corresponding in structure to Formula II: [((R9)nCp)2M2L2]2 (II), wherein M2 is a Group 3 metal or a lanthanide (e.g., scandium, yttrium and lanthanum); each R9 is independently hydrogen or Ci-Cs-alkyl; n is 1 , 2, 3, 4 or 5; Cp is cyclopentadienyl ring; and L2 is selected from the group consisting of: Cl; F; Br; I; 3,5-Rl 0R" -C3HN2; R22N=C-C-NR23; R24R25N-CH2-NR26-CH2-NR27R28, and R290- CH2-NR30-CH2-OR31 ; wherein R10, R1 1 , R22, R23, R24, R25, R26, R27, R28, R29, R30, and R31 are each independently hydrogen or Ci-Cs-alkyl, optionally wherein when M is scandium and L2 is Cl, R9 is Ci-Cs-alkyl.
[00128] Embodiment 15. The metal complex of embodiment 14, wherein each R9 is independently Ci-Cs-alkyl
[00129] Embodiment 16. The metal complex of embodiment 14 or 15, wherein each R9 is independently hydrogen or C i-C4-alkyl, preferably hydrogen, methyl, ethyl or propyl, preferably hydrogen, methyl, or ethyl, more preferably methyl.
[00130] Embodiment 17. The metal complex of embodiments 14, 15 or 16, wherein M2 is scandium; each R9 is independently a Ci-C4-alkyl, preferably methyl, ethyl or propyl, more preferably methyl; and preferably L2 is Cl.
[00131] Embodiment 18. The metal complex of embodiments 14, 15 or 16, wherein M2 is yttrium; each R9 is independently a C |-C5-alkyl, preferably methyl, ethyl or propyl; more preferably methyl or ethyl; and preferably L2 is 3,5-Rl 0Rn-C3HN2 and each R9 is independently.
[00132] Embodiment 19. The metal complex of embodiments 14, 15, 16, 17 or 18, wherein the complex is [Sc(MeCp)2]Cl]2; and [Y(MeCp)2(3,5-MePn-C3HN2)]2. [00133] Embodiment 20. A method of forming a metal-containing film by a vapor deposition process, the method comprising vaporizing at least one metal complex according to any one of the previous embodiments.
[00134] Embodiment 21. The method of embodiment 20, wherein the vapor deposition process is chemical vapor deposition, preferably pulsed chemical vapor deposition, continuous flow chemical vapor deposition, and/or liquid injection chemical vapor deposition.
[00135] Embodiment 22. The method of embodiment 20, wherein the vapor deposition process is atomic layer deposition, preferably liquid injection atomic layer deposition or plasma-enhanced atomic layer deposition.
[00136] Embodiment 23. The method of any one of embodiments 20, 21 or 22, wherein the metal complex is delivered to a substrate in pulses alternating with pulses of an oxygen source, preferably the oxygen source is selected from the group consisting of H20, H202, 02, ozone, air, /-PrOH, ί-BuOH, and N20.
[00137] Embodiment 24. The method of any one of embodiments 20, 21, 22, or 23 further comprising vaporizing at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone, and a combination of any two or more thereof, preferably the at least one co-reactant is a hydrazine ( e.g ., hydrazine (N2H4), NN- dimethylhydrazine).
[00138] Embodiment 25. The method of any one of embodiments 20, 21, 22, 23 or 24, wherein the method is used for a DRAM or CMOS application.
EXAMPLES
[00139] Unless otherwise noted, all synthetic manipulations are performed under an inert atmosphere (e.g., purified nitrogen or argon) using techniques for handling air- sensitive materials commonly known in the art (e.g., Schlenk techniques).
Example 1: Preparation of complex 11
Figure imgf000028_0001
[00140] A 500 mL Schlenk flask equipped with a magnetic stirrer was charged with ScCl3 (15.5g, 0.102 mol) and KMeCp (24.2g, 0.205 mol) followed by anhydrous diethyl ether (200mL). The mixture was stirred at room temperature (~l8°C to ~24°C) for 12 hours under a nitrogen atmosphere, giving a maroon colored suspension. The solvent was removed under pressure and the resulting solid was extracted with 5 x 50 mL toluene, and filtered through a medium frit. The filtrate was removed from the solvent under reduced pressure to afford the final product as a yellow powder (16.4 g, 0.0344 mol, 67% yield). 1H NMR (C6D6) of product: d 2.02 (12H, MeC5H4), 6.09 (8H, MeC5H4), 6.24 (8H, MeC5H4). I3C NMR (C6D6) of product: d 15.4 (MeC5H4), 1 14.4 (MeC5H4), 1 16.0 (MeC5H4), 124.9 (MeC5H4).
Example 2: Preparation of complex 3 (SclMeCpLfNlSiMevbl)
[00141] A 250 mL Schlenk flask equipped with magnetic stirrer was charged with [Sc(MeCp)2Cl]2 (4.6 g, 0.0098 mol) and KN(SiMe3)2 (3.9 g, 0.020mol) followed by anhydrous diethyl ether (100 mL). The mixture was stirred at room temperature (~l8°C to ~24°C) for 12 hours under a nitrogen atmosphere, giving a peach-colored suspension. The solvent was removed under pressure and the resulting solid was extracted with 3 x 30 mL hexane, and filtered through a medium frit. The filtrate was removed from the solvent under reduced pressure to afford the final product as a yellow powder. (6.7 g, 0.018 mol, 90% yield. 1H NMR (C6D6) of product: d 1.10 (18H, SiMe3), 2.04 (6H, MeC5H4), 5.85 (4H, MeC5H4), 6.00 (4H, MeC5H4). I3C NMR (C6D6) of product: d 4.2 (SiMe3), 15.7 (MeC5H4), 1 14.3 (MeC5H4), 1 15.9 (MeC5H4), 125.0 (MeC5H4).
Example 3: Synthesis of complex 2 (Sc(MeCp)?[1.3-bis(trimethylsilyl)allyl1)
[00142] A 250 mL Schlenk flask equipped with a magnetic stirrer was charged with [Sc(MeCp)2Cl]2 (1.0 g, 2.1 mmol) and K(l,3-bis-trimethylsilyl-allyl) (1.05 g, 4.7 mmol) followed by addition of anhydrous diethyl ether (100 mL). The mixture was stirred at room temperature (~18°C to ~24°C) for 12 hours under a nitrogen atmosphere, giving an orange suspension. The solvent was removed under reduced pressure and the resulting solid was extracted with 3 x 30 mL hexane, and filtered through a medium frit. The filtrate was removed of solvent under reduced pressure to afford the final product as a red liquid. (1.0 g, 2.6 mmol, 62% yield). 1H NMR (C6D6) of product: d 0.04 (18H, Si Me3), 1.84 (3H, Me C5H4), 1.94 (3H, MeC5 H4), 4.90 (2H, allyl C//(TMS)), 5.97 (2H, MeC5H4), 6.04 (4H, MeCsH4), 6.29 (2H, McC5H4), 7.67 (1H, allyl CH).
Example 4; Synthesis of complex 1 (Sc(MeCp)?(l-trimethylsilyIallyl))
[00143] A 250 mL Schlenk flask equipped with a magnetic stirrer was charged with [Sc(MeCp)2Cl]2 (5.2 g, 10.9 mmol) and K(trimethylsilyl-allyl) (3.3 g, 21.8 mmol) followed by addition of anhydrous diethyl ether (100 mL). The mixture was stirred at room temperature (~l8°C to ~24°C) for 12 hours under a nitrogen atmosphere, giving an orange suspension. The solvent was removed under reduced pressure and the resulting solid was extracted with 3 x 30 mL pentane, and filtered through a medium frit. The filtrate was removed of solvent under reduced pressure to afford the final product as a red liquid. (3.7 g, 11.7 mmol, 54% yield). 1H NMR (C6D6) of product: d -0.02 (9H, SiM^), 1.82 (6H, MeC5 H4), 2.29 (1 H, allyl CH2 ), 4.15 (1H, allyl CH2 ), 4.73 (1H, allyl C//(TMS)), 5.94 (8H, MeC5H4), 7.47 (1H, allyl CH).
Example 5: Synthesis of complex 4 (Sc(MeCp)?(3.5-dimethyl-pyrazolate))
[00144] A 500 mL Schlenk flask equipped with a magnetic stirrer was charged with [Sc(MeCp)2Cl]2 (12.0 g, 25.1 mmol) and KMe2Pz (6.75 g, 50.3 mmol) followed by addition of anhydrous THF (150 mL). The mixture was stirred at room temperature (~l8°C to ~24°C) for 12 hours under a nitrogen atmosphere. The solvent was removed under reduced pressure and the resulting yellow sticky solid was extracted with 5 x 20 mL toluene, and filtered through a medium frit. The filtrate was removed of solvent under reduced pressure to provide a red oil. Further distillation under vacuum afforded the final product as a light yellow liquid (10.7 g, 35.9 mmol, 72% yield). 'H NMR (C6D6) of product: d 1.85 (6H, MeC5H4), 2.28 (6H, Me2Pz), 5.84 (4H, MeC5H4), 5.96 (1H, Me2Pz), 6.20 (4H, MeC5H4).
Example 6: Synthesis of complex 8 (Y(MeCp) (3-methvI-5-pentyl-pyrazolate))
Figure imgf000030_0001
[00145] A 500 mL Schlenk flask equipped with a magnetic stirrer was charged with [Y(MeCp)2Cl]2 (9.33 g, 16.5 mmol) and K(Me,Pn)Pz (6.28 g, 33.0 mmol) followed by addition of anhydrous THF (150 mL). The mixture was stirred at room temperature for 12 hours (~l8°C to ~24°C) under a nitrogen atmosphere. The solvent was removed under reduced pressure and the resulting yellow sticky solid was extracted with 5 x 20 mL toluene, and filtered through a medium frit. The filtrated was removed of solvent under reduced pressure to provide a red oil. Further distillation under vacuum afforded the final product as a light yellow liquid (7.7 g, 19.3 mmol, 58% yield). 1H NMR (C6D6) of product: d 0.94 (3H, Pentyl), 1.40 (4H, Pentyl), 1.75 (2H, Pentyl), 2.16 (6H, MeC5H4), 2.17 (3H, Me PnPz), 2.65 (2H, Pentyl), 5.66 (4H, MeC5H4), 5.90 (1H, Me PnPz), 5.96 (4H, MeC5H4).
Example 7: Synthesis of complex 9 (Sc(MeCp)?(6-methyl-2,4-heptanedionate))
[00146] A 500 mL Schlenk flask equipped with a magnetic stirrer was charged with [Sc(MeCp)2Cl]2 (1.0 g, 1.8 mmol) and K(6-Methyl-2,4-heptanedionate) (0.67 g, 3.7 mmol) followed by addition of anhydrous THF (150 mL). The mixture was stirred at room temperature for 12 hours (~l8°C to ~24°C) under a nitrogen atmosphere. The solvent was removed under reduced pressure and the resulting yellow sticky solid was extracted with 3 x 20 mL toluene, and filtered through a medium frit. The filtrated was removed of solvent under reduced pressure to provide an orange oil (0.8 g, 2.1 mmol, 58% yield). 'H NMR (C6D6) of product: d 0.89 (6H, !Bu), 1.71 (3H, Me), 1.89 (2H, 'Bu), 2.03 (6H, Me C5H4), 2.04 (1H,‘Bu), 5.24 (1H, diketonate), 5.85 (4H, MeC5H4), 6.05 (2H, MeC5H ), 6.14 (2H, MeC 5H4).
Figure imgf000031_0001
-Methyl-2,4-heptanedionate))
[00147] A 500 mL Schlenk flask equipped with a magnetic stirrer was charged with [Y(MeCp)2Cl]2 (1.5 g, 2.4 mmol) and K(6-Methyl-2,4-heptanedionate) (0.89 g, 4.9 mmol) followed by addition of anhydrous THF (150 mL). The mixture was stirred at room temperature for 12 hours (~l 8°C to ~24°C) under a nitrogen atmosphere. The solvent was removed under reduced pressure and the resulting yellow sticky solid was extracted with 3 x 20 mL toluene, and filtered through a medium frit. The filtrated was removed of solvent under reduced pressure to provide an orange oil (1.2 g, 2.9 mmol, 60% yield). 1H NMR (C6D6) of product: d 0.89 (6H, 'Bu), 1.72 (3H, Me), 1.91 (2H,‘Bu), 2.04 (1H, 'Bu), 2.10 (6H, Me C5H4), 5.25 ( 1H, diketonate), 5.95 (4H, MeC5H4), 6.10 (2H, MeC5H4), 6.15 (2H, MeC 5H4).
Example 9: ALD of Sc?C film using complex 4 (Sc(MeCp)?(3.5-dimethyl- pyrazolate) and water
Figure imgf000032_0001
[00148] Sc(MeCp)2(3,5-dimethyl-pyrazolate) was heated to 100-1 l5°C in a stainless steel bubbler and delivered into an ALD reactor using about 20 seem of nitrogen as the carrier gas, and pulsed for about 2 seconds followed by a -28-58 second purge. A pulse of water vapor ( 1 second) was then delivered from a room temperature cylinder of water followed by a 60-second nitrogen purge. A needle valve was present between the deposition chamber and the water cylinder, and was adjusted so as to have an adequate water vapor dose. The scandium oxide was deposited at about l75-300°C for up to 300 cycles onto silicon chips having a thin layer of native oxide, Si02. The film was cooled down in the reactor to about 60°C under vacuum with nitrogen purge before unloading. Film thicknesses in the range of 60-260A were obtained, and preliminary results show a growth rate of -1 Angstrom/cycle. XPS (X-ray Photoelectron Spectroscopy) analysis confirmed the existence of scandium oxide with N and C contaminants on the top surface, which were removed during the XPS analysis. The XPS data in Figures 1-14 shows the films have no more than 1 % of any element except the desired scandium and oxygen once the surface contamination has been removed by sputtering. In the bulk, only Sc and O were detected, and the stoichiometry measured matched the theoretical composition of Sc203.
Example 10: ALD of Y?CL film using complex 12 ([Y(MeCp)?(3,5-MePn-C^HN?)]?)
General Methods
[00149] [Y(MeCp)2(3,5-MePn-C3HN2)]2 was heated to l30-l 80°C in a stainless steel bubbler, delivered into a cross-flow ALD reactor using nitrogen as a carrier gas and deposited by ALD using water. H20 was delivered by vapor draw from a stainless steel ampule at room temperature. Silicon chips having a native Si02 layer in the range of 14- nA thick were used as substrates. As-deposited films were used for thickness and optical property measurements using an optical ellipsometer. Selected samples were analyzed by XPS for film composition and impurity concentrations.
Figure imgf000033_0001
[00150] [Y(MeCp)2(3,5-MePn-C3HN2)]2 was heated to l70°C, delivered into an
ALD reactor using 20 seem of nitrogen as the carrier gas, and pulsed for 7 seconds from a bubbler followed by a 20 second of N2 purge, followed by a 0.015 second pulse of H20 and 90 second of N2 purge in each ALD cycle, and deposited at multiple temperatures from 125 to 250°C for 200 or more cycles. As-deposited films were cooled down in the reactor to ~80°C under nitrogen purge before unloading. Film thickness in the range of 150 to 420 A was deposited. Growth rate per cycle data at a fixed reactor inlet position were plotted in Figure 15.
[00151] The curve in Figure 15 indicates that the growth rate of Y203 from an un optimized H20 ALD process appeared to be temperature dependent under the same deposition conditions. The higher the temperature, the higher the growth rate. Further tests revealed that the growth rate at higher temperatures appeared to be affected by the H20 purge time, which may be due to initial formation of Y(OH)3 and/or strong absorption of H20 by the Y203 film at higher temperatures. For example, no saturation was reached even after 120 seconds of H20 purge at 200°C, while its dependence on the H20 purge time is much smaller at ~l50°C or lower as shown in Figure 16.
Example lOb
[00152] [Y(MeCp)2(3,5-MePn-C3HN2)]2 was heated to l70-l76°C, delivered into an ALD reactor using 20 seem of nitrogen as the carrier gas, and pulsed from 3 to 13 seconds from a bubbler to generate various precursor doses, followed by a 60 second of N2 purge, then by a 0.015 second pulse of H20 and 30 second of N2 purge in each ALD cycle, and deposited at 135 °C for 350 cycles. The film thickness was monitored at 3 different positions in the cross-flow reactor along the precursor/carrier gas flow direction, the precursor inlet, the reactor center, and precursor outlet. Growth rate per cycle data are plotted in Figure 17.
[00153] The saturation of the growth rate per cycle (GPC) at ~0.79A/cycle with the precursor dose as well as the convergence of the growth rates at the three different positions suggest that the process at 135°C is truly an ALD process with insignificant contribution of any CVD component to the growth rate. Under optimized saturated growth conditions, an excellent thickness uniformity of < ±1.3% over a 6~7” diameter area of the cross-flow reactor has been achieved.
[00154] The full ALD window with deposition temperature has not yet been determined. This precursor was thermally stable at higher temperatures > 250°C. [00155] All publications, patent applications, issued patents and other documents referred to in this specification are herein incorporated by reference as if each individual publication, patent application, issued patent, or other document was specifically and individually indicated to be incorporated by reference in its entirety. Definitions that are contained in text incorporated by reference are excluded to the extent that they contradict definitions in this disclosure.
[00156] The words“comprise”,“comprises”, and“comprising” are to be interpreted inclusively rather than exclusively.

Claims

WHAT IS CLAIMED IS:
1. A metal complex corresponding in structure to Formula I:
[(R1)nCp]2M'L1
(I)
wherein
M1 is scandium and yttrium;
each R1 is independently hydrogen, Ci-C5-alkyl or silyl;
n is 1 , 2, 3, 4, or 5;
Cp is cyclopentadienyl ring; and
L1 is selected from the group consisting of: NR2R3; N(SiR4R5R6)2; 3,5-R7R8- C3HN2; l-(R32)C3H4; l-R33-3-R34-C3H3; and R35,R36-C3H02; wherein R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or C)-C5-alkyl; and R32, R33, R34, R35, and R36 are each independently alkyl or silyl;
wherein when M 1 is yttrium and L1 is 3,5-R7R8-C3HN2, R1 is Ci-Cs-alkyl or silyl; and
wherein when M1 is yttrium and L1 is N(SiR4R5R6)2, n is 1, 2, 3, or 4.
2. The metal complex of claim 1 , wherein each R1 is independently hydrogen, C1-C4- alkyl or silyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or C|-C4-alkyl; and R32, R33, R34, R35, and R36 are each independently Ci-Cs-alkyl or silyl.
3. The metal complex of claim 1 or claim 2, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen, methyl, ethyl or propyl; and R32, R33, R34, R35, and R36 are each independently Ci-C4-alkyl or silyl.
4. The metal complex of any one of the previous claims, wherein each R1 is independently hydrogen, methyl or ethyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen, methyl, or ethyl; and R32, R33, R34, R35, and R36 are each independently methyl, ethyl, propyl or silyl.
5. The metal complex of any one of the previous claims, wherein each R1 is methyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or methyl; and R32, R33, R34, R35, and R36 are each SiMe3.
6. The metal complex of claim 1, wherein each R1 is independently hydrogen, C -C4- alkyl or silyl; and L1 is NR2R3, wherein R2 and R3 are each independently hydrogen or Ci-C4-alkyl.
7. The metal complex of claim 6, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl; and R 2 and R are each independently hydrogen, methyl, ethyl or propyl.
8. The metal complex of claim 6 or claim 7, wherein each R1 is independently hydrogen, methyl, or ethyl; and R 2 and R 3 are each independently hydrogen, methyl, or ethyl.
9. The metal complex of any one of claims 6 to 8, wherein each R is methyl; and R and R3 are each independently hydrogen, methyl, or ethyl.
10. The metal complex of claim 1 , wherein each R1 is independently hydrogen, C 1-C4- alkyl or silyl; and L1 is N(SiR4R5R6)2, wherein R4, R5, and R6 are each independently hydrogen or Ci-C4-alkyl.
11. The metal complex of claim 10, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl; and R4, R5, and R6 are each independently hydrogen, methyl, ethyl or propyl.
12. The metal complex of claim 10 or claim 1 1 , wherein each R1 is independently hydrogen, methyl, or ethyl; and R4, R3, and R6 are each independently hydrogen, methyl, or ethyl.
13. The metal complex of any one of claims 10 to 12, wherein each R1 is methyl; and R4, R5, and R6 are each independently hydrogen, methyl, or ethyl.
14. The metal complex of claim 1, wherein each R1 is independently hydrogen, C|-C4- alkyl or silyl; and L1 is 3,5-R7R8-C3HN2, wherein R7 and R8 are each independently hydrogen or C]-C5-alkyl.
15. The metal complex of claim 14, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl.
16. The metal complex of claim 14 or claim 15, wherein each R1 is independently hydrogen, methyl, or ethyl.
17. The metal complex of any one of claims 14 to 16, wherein each R1 is methyl.
18. The metal complex of claim 1 , wherein each R1 is independently hydrogen, C 1-C4- alkyl or silyl; and L1 is l-(R32)C3H4, wherein R32 is -Cs-alkyl or silyl
19. The metal complex of claim 18, wherein each R1 is independently hydrogen, methyl, ethyl or silyl and R32 is methyl, ethyl or silyl.
20. The metal complex of claim 1 , wherein each R1 is independently hydrogen, C 1-C4- alkyl or silyl; and L1 is l-(SiMe3)C3H4.
21. The metal complex of claim 1, wherein each R1 is independently hydrogen, C1-C4- alkyl or silyl; and L1 is l-R33-3-R34-C3H3, wherein R33 and R34 are each independently C|-C5-alkyl or silyl.
22. The metal complex of claim 21, wherein each R1 is independently hydrogen, methyl or ethyl and R33 and R34 are each independently methyl, ethyl or silyl.
23. The metal complex of claim 1 , wherein each R1 is independently hydrogen, C 1-C4- alkyl or silyl; and L1 is l,3-bis-(SiMe3)2C3H3.
24. The metal complex of claim 1 , wherein the complex is:
Sc(MeCp)2[ 1 -(SiMe3)C3H4] ;
Sc(MeCp)2[l,3-bis-(SiMe3)2C3H3]; Sc(MeCp)2LN(SiMe3)2J; and
Sc(MeCp)2(3,5-Me2-C3HN2).
25. A metal complex corresponding in structure to Formula II:
[((R9)nCp)2M2L2]2
(P)
wherein
M is scandium and yttrium;
each R9 is independently hydrogen or Ci-Cs-alkyl;
n is 1 , 2, 3, 4 or 5;
Cp is cyclopentadienyl ring; and
L2 is selected from the group consisting of: Cl, F, Br, I, and 3,5-R10R' '-C3HN2; wherein R10 and R1 1 are each independently hydrogen or Ci-Cs-alkyl;
wherein when M 2 is scandium and L 2 is Cl, R 9 s C,-C5-alkyl.
26. The metal complex of claim 25, wherein each R9 is independently Ci-C5-alkyl.
27. The metal complex of claim 25 or claim 26, wherein each R9 is independently hydrogen or Ci-C4 -alkyl.
28. The metal complex of any one of claims 25 to 27, wherein each R9 is independently hydrogen, methyl, ethyl or propyl.
29. The metal complex of any one of claims 25 to 28, wherein each R9 is independently hydrogen, methyl, or ethyl.
30. The metal complex of any one of claims 25 to 29, wherein each R9 is methyl.
31. The metal complex of claim 25, wherein M 2 is scandium and each R 9 is independently a C|-C4-alkyl.
32. The metal complex of claim 31 , wherein L2 is Cl and each R9 is independently methyl, ethyl or propyl.
33. The metal complex of claim 32, wherein each R9 is independently methyl or ethyl.
34. The metal complex of claim 25, wherein M2 is yttrium and each R9 is independently a Ci-C4-alkyl.
35. The metal complex of claim 34, wherein L2 is 3,5-Rl0Rl l-C3HN2 and each R9 is independently methyl, ethyl or propyl.
36. The metal complex of claim 34 or claim 35, wherein each R9 is independently methyl or ethyl.
37. The metal complex of Claim 25, wherein the complex is:
[Sc(MeCp)2JCl]2; and
[Y(MeCp)2(3,5-MePn-C3HN2)]2.
38. A method of forming a metal-containing film by a vapor deposition process, the method comprising vaporizing at least one metal complex corresponding in structure to Formula I:
(R'Cp^M'L1
(I)
wherein
M1 is scandium and yttrium;
each R1 is independently hydrogen, Ci-C5-alkyl or silyl;
Cp is cyclopentadienyl ring; and
L1 is selected from the group consisting of: NR2R3; N(SiR4R5R6)2; 3,5-R7R8- C3HN2; l-(R32)C3H4; l-R33-3-R34-C3H3; and R35,R36-C3H02; wherein R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or Ci-C5-alkyl; and R32, R33, R34, R35, and R36 are each independently alkyl or silyl.
39. The method of claim 38, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or C|-C4- alkyl; and R32, R33, R34, R35, and R36 are each independently Ci-C5-alkyl or silyl.
40. The method of claim 38 or claim 39, wherein each R1 is independently hydrogen, methyl, ethyl, propyl, or silyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen, methyl, ethyl or propyl; and R32, R33, R34, R35, and R36 are each independently Ci-C4-alkyl or silyl.
41. The method of any one of claims 38 to 40, wherein each R1 is independently hydrogen, methyl, or ethyl; and R2, R3, R4, R5, R6, R7, R8 are each independently hydrogen, methyl, or ethyl; and R32, R33, R34, R35, and R36 are each independently methyl, ethyl, propyl or silyl.
42. The method of any one of claims 38 to 41, wherein each R1 is methyl; R2, R3, R4, R5, R6, R7, and R8 are each independently hydrogen or methyl; and R32, R33, R34,
R35, and R36 are each SiMe3.
43. The method of claim 38, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and L1 is NR2R3, wherein R2 and R3 are each independently hydrogen or Ci-C4-alkyl.
44. The method of claim 43, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl; and R2 and R3 are each independently hydrogen, methyl, ethyl or propyl.
45. The method of claim 43 or claim 44, wherein each R1 is independently hydrogen, methyl, or ethyl; and R2 and R3 are each independently hydrogen, methyl, or ethyl.
46. The method of any one of claims 43 to 45, wherein each R is methyl; and R and
R3 are each independently hydrogen, methyl, or ethyl.
47. The method of claim 38, wherein each R1 is independently hydrogen or Ci-C4- alkyl or silyl; and L1 is N(SiR4R5R6)2, wherein R4, R5, and R6 are each independently hydrogen or C -C4-alkyl.
48. The method of claim 47, wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl; and R4, R5, and R6 are each independently hydrogen, methyl, ethyl or propyl.
49. The method of claim 47 or claim 48, wherein each R1 is independently hydrogen, methyl, or ethyl; and R4, R5, and R6 are each independently hydrogen, methyl, or ethyl.
50. The method of any one of claims 47 to 50, wherein each R1 is methyl; and R4, R5, and R6 are each independently hydrogen, methyl, or ethyl.
51. The method of claim 38, wherein each R1 is independently hydrogen, C)-C4-alkyl or silyl; and L1 is 3,5-R7R8-C3HN2, wherein R7 and R8 are each independently hydrogen or Ci-Cs-alkyl.
52. The method of claim 51 , wherein each R1 is independently hydrogen, methyl, ethyl, propyl or silyl.
53. The method of claim 51 or claim 52, wherein each R1 is independently hydrogen, methyl, or ethyl.
54. The method of any one of claims 51 to 53, wherein each R1 is methyl.
55. The method of claim 38, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and L1 is l-(R32)C3H4, wherein R32 is -Cs-alkyl or silyl.
56. The method of claim 55, wherein each R1 is independently hydrogen, methyl, ethyl or silyl and R32 is methyl, ethyl or silyl.
57. The method of claim 38, wherein each R1 is independently hydrogen, Ci-C4-alkyl or silyl; and L1 is l -(SiMe3)C3H4.
58. The method of claim 38, wherein each R1 is independently hydrogen, C|-C4-alkyl or silyl; and L1 is l-R33-3-R34-C3H3, wherein R33 and R34 are each independently Ci-Ci-alkyl or sily.
59. The method of claim 58, wherein each R1 is independently hydrogen, methyl, or ethyl and R33 and R34 are each independently methyl, ethyl or silyl.
60. The method of claim 38, wherein each R1 is independently hydrogen, C -C4-alkyl or silyl; and L1 is l ,3-bis-(SiMe3)2C3H3.
61. The method of claim 38, wherein the complex is:
Sc(MeCp)2L 1 -(SiMe3)C3H4] ;
Sc(MeCp)2[ 1 ,3-bis-(SiMe3)2C3H3] ;
Sc(MeCp)2[N(SiMe3)2] ; and
Sc(MeCp)2(3,5-Me2-C3HN2).
62. The method of any one of claims 38 to 61, wherein the vapor deposition process is chemical vapor deposition.
63. The method of claim 62, wherein the chemical vapor deposition is pulsed chemical vapor deposition or continuous flow chemical vapor deposition.
64. The method of claim 62, wherein the chemical vapor deposition is liquid injection chemical vapor deposition.
65. The method of any one of claims 38 to 61, wherein the vapor deposition process is atomic layer deposition.
66. The method of claim 65, wherein the atomic layer deposition is liquid injection atomic layer deposition or plasma-enhanced atomic layer deposition.
67. The method of any one of claims 38 to claim 66, wherein the metal complex is delivered to a substrate in pulses alternating with pulses of an oxygen source.
68. The method of claim 67, wherein the oxygen source is selected from the group consisting of H20, H202, 02, ozone, air, /-PrOH, /-BuOH, and N20.
69. The method of any one of claims 38 to 68, further comprising vaporizing at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone, and a combination of any two or more thereof.
70. The method of claim 69, wherein the at least one co-reactant is a hydrazine.
71. The method of claim 70, wherein the hydrazine is hydrazine (N2H4) or N,N- dimethylhydrazine.
72. The method of any one of claims 38 to 71, wherein the method is used for a DRAM or CMOS application.
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