WO2018047760A1 - Cured product, wavelength conversion sheet, light-emitting device, sealing member, and semiconductor light-emitting device - Google Patents

Cured product, wavelength conversion sheet, light-emitting device, sealing member, and semiconductor light-emitting device Download PDF

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Publication number
WO2018047760A1
WO2018047760A1 PCT/JP2017/031732 JP2017031732W WO2018047760A1 WO 2018047760 A1 WO2018047760 A1 WO 2018047760A1 JP 2017031732 W JP2017031732 W JP 2017031732W WO 2018047760 A1 WO2018047760 A1 WO 2018047760A1
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Prior art keywords
cured product
silicone resin
formula
group
wavelength conversion
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PCT/JP2017/031732
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French (fr)
Japanese (ja)
Inventor
理彦 西田
篤典 土居
建太朗 増井
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住友化学株式会社
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Priority to KR1020197009931A priority Critical patent/KR20190053875A/en
Priority to CN201780054504.3A priority patent/CN109689790A/en
Publication of WO2018047760A1 publication Critical patent/WO2018047760A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K3/1006Materials in mouldable or extrudable form for sealing or packing joints or covers characterised by the chemical nature of one of its constituents
    • C09K3/1018Macromolecular compounds having one or more carbon-to-silicon linkages
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping

Definitions

  • the present invention relates to a cured product, a wavelength conversion sheet, a light emitting device, a sealing member, and a semiconductor light emitting device.
  • a light emitting device using a semiconductor laser (LD, Laser Diode) or a light emitting diode (LED, Light Emitting Diode) has been studied.
  • the semiconductor laser can maintain high conversion efficiency even in a high current density region.
  • the semiconductor laser can be downsized by separating the light emitting portion and the excitation portion. Therefore, it is expected that a semiconductor laser is used for the lighting device.
  • Light-emitting diodes are becoming brighter due to recent technological developments.
  • a cured silicone resin is known as a transparent material used in a light emitting device.
  • Patent Document 1 describes that a cured product of a polymerizable silicone resin is used as a matrix material of a phosphor sheet of an LED.
  • the cured silicone resin not only has excellent light transmittance, but also has excellent heat resistance and UV resistance. Therefore, a member using a cured silicone resin as a forming material is suitable because it hardly deteriorates even when used in a light-emitting device that is used for a long period of time.
  • a member made of a hardened silicone resin cured material has an advantage that it is difficult to be damaged.
  • the hardened silicone resin cured product has a disadvantage that the yield tends to decrease because cracks are likely to occur during curing.
  • a hardened silicone resin cured product has a drawback that cracks due to thermal stress or the like are likely to occur during use. Therefore, there has been a demand for a cured silicone resin having a high hardness, which is less likely to crack during curing and less likely to crack during heating.
  • crack resistance the property that cracks hardly occur during curing
  • heat resistance the property that cracks are less likely to occur during heating
  • a member In a light emitting device using a semiconductor laser or UV-LED, a member may be irradiated with light having a high energy density. Moreover, in the light-emitting device using high-intensity LED, a member may be exposed to high temperature by the heat_generation
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a cured product having both high hardness, high crack resistance, and high heat resistance. It is another object of the present invention to provide a wavelength conversion sheet, a light emitting device, a sealing member, and a semiconductor light emitting device using the cured product as a forming material.
  • the present invention provides the following [1] to [13].
  • a cured product that includes a cured cured silicone resin and satisfies the following (1) and (2).
  • (1) In the solid 29 Si-nuclear magnetic resonance spectrum of the cured silicone resin cured product, there is a peak attributed to the silicon atom of the T form. (Here, the silicon atom of the T form means a silicon atom bonded to three oxygen atoms.)
  • (2) The following non-uniform domain size is 50 mm or more.
  • non-uniform domain size means The measurement value of small-angle X-ray scattering of a sample obtained by impregnating tetrahydrofuran of the condensed silicone resin cured product with swelling, A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering, It is a value obtained by fitting with the following formula (A).
  • the T3 silicon atom means a silicon atom in which all three oxygen atoms are bonded to other silicon atoms in the T-body silicon atoms.
  • the cured silicone resin cured product includes a structural unit represented by formula (A1), formula (A1 ′), formula (A2), or formula (A3) Cured product according to crab.
  • R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
  • R 2 represents an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group.
  • R 1 and R 2 may be the same or different.
  • R 1 is a methyl group
  • R 2 is an alkoxy group having 1 to 3 carbon atoms or a hydroxyl group
  • a plurality of R 2 may be the same or different.
  • the cured product according to [6], wherein the filler is a wavelength conversion material.
  • the cured product according to [7], wherein the wavelength conversion material is a phosphor.
  • a wavelength conversion sheet using the cured product according to [7] or [8] as a forming material [10] a light source that emits light; A wavelength conversion sheet according to [9], which is disposed at a position where light emitted from the light source is incident. [11] A sealing member comprising the cured product according to any one of [1] to [8] as a forming material. [12] a substrate; A semiconductor light emitting device disposed on the substrate; A sealing member for sealing at least a part of the semiconductor light emitting element, A semiconductor light-emitting device, wherein the sealing member is the sealing member according to [11]. [13] The semiconductor light emitting device according to [12], wherein an emission wavelength of the semiconductor light emitting element is 400 nm or less.
  • a cured product having both high hardness, high crack resistance and high heat resistance can be provided.
  • cured material as a forming material, a light-emitting device, the member for sealing, and a semiconductor light-emitting device can be provided.
  • the structural unit contained in the silicone resin is preferably contained in the silicone resin as a repeating unit.
  • the cured product of the present invention includes a condensed silicone resin cured product and satisfies the following (1) and (2).
  • (1) In the solid 29 Si-nuclear magnetic resonance spectrum of the cured silicone resin cured product, there is a peak attributed to the silicon atom of the T form. (Here, the silicon atom of the T form means a silicon atom bonded to three oxygen atoms.)
  • (2) The following non-uniform domain size is 50 mm or more.
  • non-uniform domain size means The measurement value of small-angle X-ray scattering of a sample obtained by impregnating tetrahydrofuran of the condensed silicone resin cured product with swelling, A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering, It is a value obtained by fitting with the following formula (A). )
  • SAXS small angle X-ray scattering
  • condensation type silicone resin is used as a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment.
  • Condensation type silicone resin may be used individually by 1 type, and may use 2 or more types.
  • the condensation type silicone resin is a resin that undergoes polycondensation by subjecting a hydroxyl group bonded to a silicon atom and an alkoxy group or hydroxyl group bonded to another silicon atom to a dealcoholization reaction or a dehydration reaction.
  • the condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment includes a structural unit represented by the following formula (A3).
  • the condensed silicone resin is one or more selected from the group consisting of a structural unit represented by the formula (A1), a structural unit represented by the formula (A1 ′), and a structural unit represented by the formula (A2).
  • the structural unit is preferably further included, and further includes all of the structural unit represented by the formula (A1), the structural unit represented by the formula (A1 ′), and the structural unit represented by the formula (A2). More preferred.
  • R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
  • R 2 represents an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group. A plurality of R 1 and R 2 may be the same or different.
  • a structural unit including a silicon atom bonded to three oxygen atoms is referred to as a “T body”.
  • a structural unit containing a silicon atom in which all of the three oxygen atoms are bonded to another silicon atom is referred to as a “T3 body”.
  • a structural unit containing a silicon atom in which two of the three oxygen atoms are bonded to another silicon atom is referred to as a “T2 body”.
  • a structural unit including a silicon atom in which one of the three oxygen atoms is bonded to another silicon atom is referred to as a “T1 body”. That is, “T body” means “T1 body”, “T2 body”, and “T3 body”.
  • D-form a structural unit containing a silicon atom bonded to two oxygen atoms
  • M body A structural unit containing a silicon atom bonded to one oxygen atom
  • the structural unit represented by the formula (A3) includes three oxygen atoms bonded to other silicon atoms and a silicon atom bonded to R 1 . Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, the structural unit represented by the formula (A3) is a T3 isomer.
  • the structural unit represented by the formula (A2) includes two oxygen atoms bonded to other silicon atoms, and a silicon atom bonded to R 1 and R 2 . Since R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structural unit represented by the formula (A2) is a T2 isomer.
  • the structural unit represented by the formula (A1) includes one oxygen atom bonded to another silicon atom, a silicon atom bonded to R 1 and two R 2 atoms. Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structural unit represented by the formula (A1) Is T1 body.
  • the structural unit represented by the formula (A1 ′) includes a silicon atom bonded to R 1 and two R 2, and the silicon atom is bonded to a silicon atom in another structural unit. It is bonded to an atom. Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structure represented by the formula (A1 ′) The unit is T1 body.
  • the structural unit represented by the formula (A1) and the structural unit represented by the formula (A1 ′) constitute the end of the organopolysiloxane chain contained in the condensed silicone resin.
  • the structural unit represented by the formula (A3) constitutes a branched structure of an organopolysiloxane chain contained in the condensation type silicone resin. That is, the structural unit represented by the formula (A3) forms a part of a network structure or a ring structure in the condensed silicone resin.
  • T3 silicon atom A silicon atom contained in the T2 body is referred to as “T2 silicon atom”.
  • T1 silicon atom The silicon atom contained in the T1 body is referred to as “T1 silicon atom”.
  • the total content of T1 body, T2 body and T3 body is preferably 50 mol% or more based on the total content of all structural units of the condensation type silicone resin.
  • the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms in the condensed silicone resin.
  • the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is more preferably 60 mol% or more, and 70 mol% or more based on the total content of all silicon atoms in the condensation type silicone resin. More preferably, it is 80 mol% or more, still more preferably 90 mol% or more.
  • the content of D-form is preferably 30 mol% or less, more preferably 20 mol% or less, and more preferably 10 mol% or less with respect to the total content of all structural units of the condensation-type silicone resin. Is more preferably 5 mol% or less, and still more preferably 4 mol% or less.
  • the total content of T1, T2, and T3 is the total area of signals of all silicon atoms determined by solid-state 29 Si-NMR measurement, and is the signal attributed as T1, T2, and T3 silicon atoms. It can be obtained by dividing the total area.
  • the content of the T3 body is preferably 50 mol% or more with respect to the total content of all structural units of the condensation type silicone resin.
  • the content of T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms in the condensation type silicone resin.
  • the content of T3 silicon atoms is more preferably 60 mol% or more, and further preferably 70 mol% or more, based on the total content of all silicon atoms in the condensation type silicone resin.
  • the content of T3 silicon atoms can be obtained by dividing the area of signals attributed as T3 silicon atoms by the total area of signals of all silicon atoms obtained in solid 29 Si-NMR measurement.
  • the content of silicon atoms other than T3 silicon atoms can be determined in the same manner.
  • the alkyl group having 1 to 10 carbon atoms represented by R 1 may be a linear alkyl group, a branched alkyl group, or an alkyl group having a cyclic structure. Good. Among these, a linear or branched alkyl group is preferable, and a linear alkyl group is more preferable.
  • one or more hydrogen atoms constituting the alkyl group may be substituted with another functional group.
  • substituent of the alkyl group include aryl groups having 6 to 10 carbon atoms such as a phenyl group and a naphthyl group, and a phenyl group is preferable.
  • Examples of the alkyl group having 1 to 10 carbon atoms represented by R 1 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, and an n-pentyl group. And an unsubstituted alkyl group such as a neopentyl group, a hexyl group, an octyl group, a nonyl group and a decyl group, and an aralkyl group such as a phenylmethyl group, a phenylethyl group and a phenylpropyl group.
  • a methyl group, an ethyl group, an n-propyl group or an n-butyl group is preferable, a methyl group, an ethyl group or an isopropyl group is more preferable, and a methyl group is more preferable.
  • one or more hydrogen atoms constituting the aryl group may be substituted with another functional group.
  • substituent for the aryl group include alkyl groups having 1 to 10 carbon atoms such as a methyl group, an ethyl group, a propyl group, and a butyl group.
  • Examples of the aryl group having 6 to 10 carbon atoms represented by R 1 include unsubstituted aryl groups such as a phenyl group and a naphthyl group, and alkylaryl groups such as a methylphenyl group, an ethylphenyl group, and a propylphenyl group. It is done. Among these, a phenyl group is preferable.
  • R 1 is preferably an alkyl group, more preferably a methyl group, an ethyl group or an isopropyl group, and even more preferably a methyl group.
  • the C 1-4 alkoxy group represented by R 2 may be a linear alkoxy group, a branched alkoxy group, or an alkoxy group having a cyclic structure. Good. Among these, a linear or branched alkoxy group is preferable, and a linear alkoxy group is more preferable.
  • the alkoxy group having 1 to 4 carbon atoms represented by R 2 is, for example, preferably a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group or a tert-butoxy group.
  • a group, an ethoxy group or an isopropoxy group is more preferable.
  • R 2 is preferably a methoxy group, an ethoxy group, an isopropoxy group or a hydroxyl group.
  • the condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment is represented by the following formula (C1), formula (C1 ′), formula (C2), formula (C3), or formula (C4). ) May be further included.
  • a structural unit including a silicon atom bonded to four oxygen atoms is referred to as a “Q body”.
  • a structural unit containing a silicon atom in which one of the four oxygen atoms is bonded to another silicon atom is referred to as “Q1 body”.
  • the structural unit represented by the formula (C1) and the structural unit represented by the formula (C1 ′) are Q1 isomers.
  • a structural unit containing a silicon atom in which two of the four oxygen atoms are bonded to another silicon atom is referred to as “Q2 body”.
  • the structural unit represented by the formula (C2) is Q2 isomer.
  • a structural unit including a silicon atom in which three oxygen atoms among the four oxygen atoms are bonded to other silicon atoms is referred to as “Q3 body”.
  • the structural unit represented by the formula (C3) is Q3 body.
  • a structural unit containing a silicon atom in which all of the four oxygen atoms are bonded to another silicon atom is referred to as “Q4 body”.
  • the silicon atom contained in Formula (C4) is Q4 body.
  • Q body means Q1, Q2, Q3 and Q4 bodies.
  • the specific gravity of the condensed silicone resin cured product contained in the cured product of this embodiment is preferably 1.20 to 1.35.
  • the specific gravity of the condensed silicone resin cured product can be appropriately adjusted by controlling the content ratio of the D-form, T-form and Q-form.
  • the cured silicone resin cured product was measured for small-angle X-ray scattering, and the specific parameters calculated from the measured values of the small-angle X-ray scattering determined the crack resistance and hardness ( That is, it was found to correlate with the mechanical properties of the cured product. That is, it has been found that a cured product in which a specific parameter satisfies a predetermined requirement is excellent in hardness and crack resistance. Moreover, the hardened
  • a cured product having the following non-uniform domain size of 50 mm or more as a parameter is excellent in hardness, crack resistance and heat resistance.
  • the heterogeneous domain size is a measured value of small-angle X-ray scattering of a sample in which a condensed silicone resin cured product is impregnated with tetrahydrofuran and swollen.
  • the mesh mesh size represented by ⁇ is an index value related to the distance between T3 silicon atoms, which are crosslinking points, in a sample obtained by impregnating and expanding a condensed silicone resin cured product contained in the cured product of this embodiment with tetrahydrofuran. It is.
  • the fitting constants represented by A and B are arbitrary constants used when fitting with the formula (A).
  • Equation (A) means that curve fitting is performed using a Squared Laurentian function and an Ornstein Zernike function.
  • the fitting parameter is obtained by the least square method.
  • the initial value of the fitting is 1 ⁇ ⁇ ⁇ 50 ⁇ and 1 ⁇ ⁇ ⁇ 250 ⁇ .
  • Measurement of small-angle X-ray scattering can be performed using a small-angle X-ray scattering device equipped with a two-dimensional detector.
  • a small-angle X-ray scattering device equipped with a two-dimensional detector.
  • An example of such a device is NanoSTAR (device name, manufactured by Bruker AXS Co., Ltd.).
  • the condensed silicone resin cured product is pulverized using a freeze pulverizer.
  • the freeze pulverizer include JFC-300 manufactured by Nippon Kogyo Co., Ltd.
  • the silicone cured product is pulverized until the average particle size becomes 100 ⁇ m or less.
  • X-rays are generated at an output of 50 kV and 100 mA using, for example, a rotating anti-cathode X-ray generator of a Cu target. Then, the generated X-ray is irradiated to the swollen sample (specimen).
  • X-rays are irradiated to the swollen sample through an X-ray optical system consisting of, for example, a cross-coupled gobel mirror and three pinhole slits (the diameters of the slits are 500 ⁇ m ⁇ , 150 ⁇ m ⁇ and 500 ⁇ m ⁇ from the X-ray generator side). Is done.
  • the X-rays scattered by the swollen sample are detected using a two-dimensional detector (two-dimensional multi wire detector, Hi-STAR).
  • the length from the swollen sample to the detector can be, for example, 106 cm, and the size of the direct beam stopper can be, for example, 2 mm ⁇ .
  • the degree of vacuum in the apparatus is, for example, 40 Pa or less.
  • the range of the scattering angle 2 ⁇ that can be measured is 0.08 to 3 °.
  • a two-dimensional scattered image obtained by detection can be analyzed using, for example, analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS, and a small-angle X-ray small-angle scattering spectrum can be obtained.
  • SAXS Ver. 4.1.29 analysis software manufactured by Bruker AXS
  • the horizontal axis is the wave number of X-rays (unit: ⁇ -1 )
  • the vertical axis is the measured scattering intensity.
  • the horizontal axis represents the wave number of X-rays used in the measurement of small-angle X-ray scattering of the swollen sample, and blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the swollen sample
  • a graph in which the measured values of small-angle X-ray scattering of the swollen sample are plotted with the scattering intensity obtained by subtracting the ordinate as the vertical axis is created.
  • the contrast of electron density in a substance derived from the shape of particles and the density of cross-linking points is generally reflected in the scattering profile.
  • a region having a high crosslinking density for example, a region where T3 silicon atoms are dense
  • scattering due to an electron density difference at a crosslinking point cannot be obtained by ordinary small-angle X-ray scattering.
  • the network structure in the cured product is expanded and the contrast between the solvent and the cured product is increased, so that scattering resulting from the non-uniformity of the crosslinking points in the cured product is obtained. Can do.
  • FIG. 1 is a schematic diagram showing the above-described polymerization state, and shows the distribution of T3 silicon atoms contained in the condensed silicone resin cured product.
  • the shades of color indicate the amount of T3 silicon atoms.
  • a lightly colored portion indicates that the region has few T3 silicon atoms, and a darkly colored portion indicates that the region has many T3 silicon atoms.
  • a scattering profile is obtained based on the contrast of the electron density between region A and region B.
  • the non-uniform domain size ⁇ ⁇ ⁇ ⁇ described above corresponds to the average distance of the center-to-center distance d between the region A1 and the region A2 schematically shown in FIG.
  • the center of the area A1 is indicated by reference numeral P1
  • the center of the area A2 is indicated by reference numeral P2.
  • the center of the area corresponds to the center of gravity of each area. That is, P1 that is the center of the region A1 and P1 that is the center of the region A2 correspond to the centers of gravity of the region A1 and the region A2, respectively.
  • the T3 silicon atoms are uniformly distributed in the cured product, the T3 silicon atoms are uniformly distributed even in the swollen sample, so that the non-uniform domain size is small. That is, it means that the distribution of T3 silicon atoms is uniform in a cured product having a small heterogeneous domain size ⁇ .
  • T3 silicon atoms are distributed more unevenly than the predetermined standard in the cured product, even if stress is applied to the cured product, the stress can be dispersed throughout the cured product. Therefore, a cured product in which T3 silicon atoms are distributed more unevenly than a predetermined standard has high crack resistance.
  • a cured product having a non-uniform domain size ⁇ of 50 ⁇ or more has both high hardness and high crack resistance. This is because the strength is maintained in the region where the T3 silicon atoms are dense and the stress is relaxed in the region where the T3 silicon atoms are sparse.
  • the cured silicone resin cured product contained in the cured product of this embodiment preferably has a non-uniform domain size of 50 to 600 cm.
  • the heterogeneous domain size wrinkle is preferably 60 mm or more, more preferably 70 mm or more, further preferably 80 mm or more, particularly preferably 90 mm or more, and particularly preferably 100 mm or more. Preferably, it is 110 mm or more, even more preferably 120 mm or more, even more preferably 130 kg or more.
  • the heterogeneous domain size wrinkle is preferably 500 mm or less, more preferably 400 mm or less, further preferably 300 mm or less, particularly preferably 200 mm or less, and preferably 150 mm or less. Even more preferred.
  • a cured product having a non-uniform domain size ⁇ within this range satisfies a high hardness (Shore D hardness of 70 or more) and a high crack resistance, and thus is suitable for device application.
  • the hardness measured at a descending speed of 1 mm / second using a type D durometer is defined as Shore D hardness.
  • the condensed silicone resin cured product contained in the cured product of the present embodiment is a condensed silicone obtained by blending a silicone resin as a main ingredient (hereinafter referred to as “silicone resin A”) and an oligomer component described later. It is preferable that it is a hardened
  • the heterogeneous domain size wrinkles can be controlled by adjusting the types and blending ratios of the silicone resin A and the oligomer component as raw materials, and adjusting the curing conditions at the time of curing. Adjustment of the curing conditions during curing is more effective for controlling the non-uniform domain size wrinkles.
  • Silicone resin A is a material containing many crosslinking points (branched structures) that form a network structure.
  • the oligomer component has a linear structure such as a T2 body or a D body structure, and is a material having fewer crosslinking points than the silicone resin A.
  • the silicone resin A and the oligomer component will be described.
  • Silicone resin A includes a structural unit represented by the above formula (A3).
  • the silicone resin A is selected from the group consisting of a structural unit represented by the above formula (A1), a structural unit represented by the above formula (A1 ′), and a structural unit represented by the above formula (A2). It is preferable that a structural unit of more than seeds is further included.
  • the total content of the T1 body, the T2 body, and the T3 body is usually 70 mol% or more with respect to the total content of all the structural units of the silicone resin A.
  • the content of the T3 body is usually 60 mol% or more and 90 mol% or less with respect to the total content of all the structural units of the silicone resin A.
  • the polystyrene-reduced weight average molecular weight of the silicone resin A is usually 1500 or more and 8000 or less.
  • the total content of the T1, T2 and T3 bodies is preferably 80 mol% or more and 90 mol% or more with respect to the total content of all structural units of the silicone resin A. More preferably, it is more preferably 95 mol% or more.
  • the content of the T3 body is preferably 65% or more and 90% or less, and more preferably 70% or more and 85% or less with respect to the total content of all the structural units of the silicone resin A. preferable.
  • the weight average molecular weight in terms of polystyrene of the silicone resin A is preferably 1500 or more and 7000 or less, and more preferably 2000 or more and 5000 or less.
  • silicone resin A a commercially available silicone resin can be used.
  • the silicone resin A preferably has a silanol group (Si—OH).
  • the silicon atom having a silanol group is preferably 1 to 30 mol%, more preferably 5 to 27 mol%, based on all silicon atoms contained in the silicone resin A. More preferably, it is ⁇ 25 mol%.
  • the curing speed will be within an appropriate range, and it is cured by combining with the structure control by the curing conditions of the silicone resin described later. It is possible to effectively control mechanical properties such as hardness and strength of the object.
  • the silicon atom having an alkoxy group is preferably more than 0 mol% and not more than 20 mol%, more than 0 mol% and not more than 10 mol% with respect to all silicon atoms contained in the silicone resin A. More preferably, it is 1 mol% or more and 10 mol% or less.
  • the silicone resin A if the content of silicon atoms having an alkoxy group is within the above range, the fluidity of the silicone resin composition obtained by dissolving the silicone resin in a solvent is within the appropriate range, and the silicone resin The handling property of the composition is improved.
  • the silicone resin A can be synthesized using an organosilicon compound having a functional group capable of generating a siloxane bond as a starting material.
  • the “functional group capable of generating a siloxane bond” include a halogen atom, a hydroxyl group, and an alkoxy group.
  • the organosilicon compound corresponding to the structural unit represented by the above formula (A3) include organotrihalosilane and organotrialkoxysilane.
  • Silicone resin A is obtained by reacting an organic silicon compound, which is a starting material, with a hydrolysis condensation method in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide at a ratio corresponding to the existing ratio of each structural unit. Can be synthesized. By appropriately selecting an organic silicon compound that is a starting material, the abundance ratio of T3 silicon atoms contained in the silicone resin A can be adjusted.
  • the content of the silicone resin A contained in the condensation type silicone resin is preferably 60% by mass to 100% by mass, preferably 70% by mass to the total content of all silicone resins contained in the condensation type silicone resin. More preferably, it is 95 mass%.
  • the condensation-type silicone resin contains silicone resin A and an oligomer having a linear structure with less content of T3 than silicone resin A, a region where polymerization reaction easily occurs and a region where polymerization reaction hardly occurs are generated. . As a result, the resulting cured product has “appropriate non-uniformity”.
  • oligomer component examples include an oligomer containing a structural unit represented by the following formula (B1), formula (B1 ′), formula (B2), or formula (B3).
  • R 3 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
  • R 4 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group.
  • a plurality of R 3 and R 4 may be the same or different.
  • the weight average molecular weight in terms of polystyrene of the oligomer containing the structural unit represented by the formula (B1), formula (B1 ′), formula (B2) and formula (B3) is preferably 1000 to 10,000, and 2000 to 8000. More preferably, it is 3000 to 6000.
  • oligomer B an oligomer component having a structural unit represented by formula (B1), formula (B1 ′), formula (B2), and formula (B3) and having a polystyrene-equivalent weight average molecular weight of 1000 to 10,000 is used. , Referred to as “oligomer B”.
  • Oligomer B is preferably (a) an oligomer containing T2 form or (b) an oligomer containing D form, more preferably an oligomer satisfying (a) and (b), that is, (c) an oligomer containing T2 form and D form. .
  • the oligomer containing T2 isomer is a structural unit represented by the formula (B2), wherein R 4 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group
  • the T2 isomer content is preferably 30 to 60 mol%, more preferably 40 to 55 mol%.
  • oligomer B is an oligomer containing (a) T2 form
  • the condensation type silicone resin ensures the solubility of silicone resin A and oligomer B, Good curing reactivity is exhibited during heat curing.
  • the oligomer containing D isomer is a silicone resin containing a structural unit represented by formula (B1), formula (B1 ′), formula (B2) or formula (B3).
  • a silicone resin having an average composition formula represented by the following formula (I) is preferable.
  • n represents a real number satisfying 1 ⁇ n ⁇ 2.
  • m represents a real number satisfying 0 ⁇ m ⁇ 1.
  • the oligomer B whose average composition formula is represented by the following formula (I) includes the above-mentioned “T-form” and “D-form”.
  • R 5 is preferably a methyl group
  • R 6 is preferably a methyl group or a hydrogen atom
  • n is a real number satisfying 1 ⁇ n ⁇ 1.5
  • m is preferably a real number satisfying 0.5 ⁇ m ⁇ 1
  • n is a real number satisfying 1.1 ⁇ n ⁇ 1.4.
  • m is a real number that satisfies 0.55 ⁇ m ⁇ 0.75.
  • a structural unit represented by the formula (B1) and a structural unit represented by the formula (B1 ′) one of the two R 4 has 1 to 10 carbon atoms
  • the structural unit in which the alkyl group or aryl group having 6 to 10 carbon atoms and the other is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group is “D1 form”.
  • the total content of D1 isomer and D2 isomer among all structural units contained in the oligomer B is preferably 5 to 80 mol%. It is more preferably 70 mol%, and further preferably 15 to 50 mol%.
  • the structural unit which is a hydroxyl group is T1 body.
  • the structural unit represented by the formula (B2), in which R 4 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, is a T2 isomer.
  • the structural unit represented by the formula (B3) is a T3 body.
  • the oligomer B is an oligomer containing (c) the T2 form and the D form, among the total structural units contained in the oligomer B, the total content of the T1 form, the T2 form and the T3 form, and the content of the D form
  • the molar ratio (T-form: D-form) is preferably 60:40 to 90:10.
  • the oligomer B can be synthesized using an organosilicon compound having a functional group capable of forming a siloxane bond as a starting material corresponding to each of the structural units described above constituting the silicone resin.
  • a functional group capable of generating a siloxane bond include a halogen atom, a hydroxyl group, and an alkoxy group.
  • organosilicon compound corresponding to the structural unit represented by the above formula (B3) examples include organotrihalosilane, organotrialkoxysilane and the like.
  • organosilicon compound corresponding to the structural unit represented by the above formula (B2) examples include organodihalosilane and organodialkoxysilane.
  • Oligomer B is obtained by reacting an organosilicon compound as a starting material at a ratio corresponding to the abundance ratio of each structural unit in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide by a hydrolytic condensation method. Can be synthesized. By appropriately selecting the organosilicon compound as the starting material, the abundance ratio of the T-form silicon atom and the D-form silicon atom contained in the oligomer B can be adjusted.
  • the content of the oligomer B contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the total content of all silicone resins contained in the condensation type silicone resin.
  • the content is more preferably from 15% by mass to 15% by mass, and further preferably from 0.5% by mass to 10% by mass.
  • the content of the oligomer B contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the content of the silicone resin A contained in the condensation type silicone resin. % To 15% by mass is more preferable, and 5% to 12% by mass is even more preferable.
  • oligomer C include, for example, a silicone resin containing a structural unit represented by the above formula (A1), the above formula (A1 ′), the above formula (A2), or the above formula (A3), The ratio of the content of the structural unit represented by the above formula (A3) to the total content of the structural units represented by A1), the above formula (A1 ′), the above formula (A2) and the above formula (A3) is A silicone resin having a polystyrene-reduced weight average molecular weight of less than 1500 and having a molecular weight of 0 to 30 mol% can be mentioned. In the following description, such a silicone resin is referred to as “oligomer C”.
  • Oligomer C is a silicone in which the ratio of the content of T3 silicon atoms to the total content of T1 silicon atoms, T2 silicon atoms and T3 silicon atoms is 0 to 30 mol%, and the weight average molecular weight in terms of polystyrene is less than 1500 Resin.
  • the ratio of the content of T3 silicon atoms to the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is preferably 0 to 25 mol%.
  • the oligomer C preferably has substantially no silicon atom (hydrosilyl group) bonded to a hydrogen atom and silicon atom bonded to an alkenyl group.
  • the heat resistance of the cured product of this embodiment tends to be low.
  • the oligomer C is preferably an oligomer having an organopolysiloxane structure represented by the following formula (2).
  • R 1 and R 2 represent the same meaning as described above.
  • a plurality of R 1 and R 2 may be the same or different.
  • R 1 is one or more groups selected from the group consisting of a methyl group, an ethyl group and a phenyl group
  • R 2 is a methoxy group, an ethoxy group, an iso group. It is preferably one or more groups selected from the group consisting of a propoxy group and a hydroxyl group
  • R 1 is one or more groups selected from the group consisting of a methyl group and an ethyl group
  • R 2 is a methoxy group
  • R 1 is preferably a methyl group.
  • the abundance ratio of each silicon atom in the oligomer C can be adjusted by appropriately adjusting the numerical values of p 2 , q 2 , r 2 , a 2 and b 2 .
  • [A 2 ⁇ q 2 ] / [(p 2 + b 2 ⁇ q 2 ) + a 2 ⁇ q 2 + (r 2 + q 2 )] is a T3 silicon atom in the organopolysiloxane structure represented by the formula (2) Abundance ratio: equal to [y 2 / (x 2 + y 2 + z 2 )]. That is, p 2 , q 2 , r 2 , a 2 and b 2 in the formula (2) are appropriately adjusted so that the abundance ratio of T3 silicon atoms is in the range of 0 to 0.3.
  • the oligomer C that may be contained in the condensed silicone resin that is the raw material of the condensed silicone resin cured product contained in the cured product of the present embodiment is a silicone resin having an organopolysiloxane structure represented by the formula (2).
  • the ratio of the content of T3 silicon atom to the total content of T1 silicon atom, T2 silicon atom and T3 silicon atom: [y 2 / (x 2 + y 2 + z 2 )] is 0 to 0.3
  • the oligomer whose weight average molecular weight of polystyrene conversion is less than 1500 is preferable.
  • the abundance ratio of T3 silicon atoms is within this range, the abundance ratio of T2 silicon atoms: [x 2 / (x 2 + y 2 + z 2 )] and the abundance ratio of T1 silicon atoms: [z 2 / (x 2 + y 2 + z 2 )] is not particularly limited.
  • the oligomer C [y 2 / (x 2 + y 2 + z 2 )] is preferably in the range of 0 to 0.25, more preferably in the range of 0.05 to 0.2.
  • Oligomer C has a relatively low abundance ratio of T3 silicon atoms, and therefore has a small branched chain structure and contains many linear molecules and cyclic molecules.
  • the oligomer C may include only cyclic molecules, but preferably includes many linear molecules.
  • an abundance ratio of T1 silicon atom: [z 2 / (x 2 + y 2 + z 2 )] is preferably in the range of 0 to 0.80, preferably 0.30 to 0.80. Those within the range are more preferred, those within the range of 0.35 to 0.75 are still more preferred, and those within the range of 0.35 to 0.55 are particularly preferred.
  • the content of the oligomer C contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the total content of all silicone resins contained in the condensation type silicone resin.
  • the content is more preferably from 15% by mass to 15% by mass, and further preferably from 0.5% to 10% by mass.
  • the content of the oligomer C contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the content of the silicone resin A contained in the condensation type silicone resin. It is more preferably 3% by mass to 10% by mass, and further preferably 0.5% by mass to 5% by mass.
  • the weight average molecular weight of the oligomer C in terms of polystyrene is less than 1500.
  • the polystyrene-converted weight average molecular weight of the oligomer C measured by GPC may be less than 1000.
  • the number of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms in one molecule of oligomer C is appropriately adjusted so that the resin having an organopolysiloxane structure represented by formula (2) has a desired molecular weight. .
  • the sum of the number of T1 silicon atoms, the number of T2 silicon atoms and the number of T3 silicon atoms in the oligomer C1 molecule is preferably 2 or more.
  • the oligomer C can be synthesized using an organosilicon compound having a functional group capable of generating a siloxane bond corresponding to each structural unit described above constituting the oligomer C as a starting material.
  • the “functional group capable of generating a siloxane bond” has the same meaning as described above.
  • Examples of the organosilicon compound corresponding to the structural unit represented by the above formula (A3) include organotrihalosilane and organotrialkoxysilane.
  • the oligomer C can be synthesized by reacting such an organic silicon compound as a starting material at a ratio corresponding to the abundance ratio of each structural unit by a hydrolytic condensation method.
  • an organosilicon compound corresponding to the structural unit represented by the above formula (A1) and an organosilicon compound corresponding to the structural unit represented by the above formula (A1 ′) are mixed. Will be.
  • these organosilicon compounds are polymerized by hydrolytic condensation reaction, these organosilicon compounds are bonded to the terminals of the polymerization reaction to stop the polymerization reaction.
  • the condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment preferably includes the silicone resin A and an oligomer component.
  • oligomer component oligomer B or oligomer C is preferable.
  • the condensation-type silicone resin that is a raw material of the condensation-type silicone resin cured product contained in the cured product of the present embodiment preferably includes silicone resin A and oligomer B, and silicone resin A, oligomer B, and oligomer C. And more preferably.
  • Examples of other oligomer components include a silicone resin containing a structural unit represented by the above formula (A1) and a structural unit represented by the above formula (A2).
  • the silicone resin may contain a D body.
  • the condensation type silicone resin which is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment has a high content of T3 body. Therefore, a solvent may be added to the condensation-type silicone resin for the purpose of improving handling properties.
  • a composition containing a condensation type silicone resin and a solvent is referred to as a “silicone resin composition”.
  • the solvent is not particularly limited as long as the silicone resin can be dissolved.
  • the solvent for example, two or more solvents having different boiling points (hereinafter referred to as solvent P and solvent Q) can be used.
  • an organic solvent having a boiling point of less than 100 ° C. is preferable.
  • ketone solvents such as acetone and methyl ethyl ketone
  • alcohol solvents such as methanol, ethanol, isopropyl alcohol, and normal propyl alcohol
  • hydrocarbon solvents such as hexane, cyclohexane, heptane, and benzene
  • An acetate solvent such as diethyl ether or tetrahydrofuran is preferred.
  • alcohol solvents such as methanol, ethanol, isopropyl alcohol, and normal propyl alcohol are more preferable.
  • Solvent Q is preferably an organic solvent having a boiling point of 100 ° C. or higher. Specifically, a glycol ether solvent and a glycol ester solvent are preferable.
  • glycol ether solvent examples include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol monoethyl hexyl ether, ethylene glycol monophenyl ether, ethylene Glycol monobenzyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, diethylene glycol monoethyl hexyl ether, diethylene glycol monophenyl ether, di Tylene glycol monobenzyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monoisopropyl ether, propylene glycol monobutyl ether, propylene glyco
  • glycol ester solvent examples include ethylene glycol monoethyl ether acetate, ethylene glycol monoisopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monohexyl ether acetate, ethylene glycol monoethyl hexyl ether acetate, ethylene glycol monophenyl ether acetate, And ethylene glycol monobenzyl ether acetate.
  • ethylene glycol monobutyl ether diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, and ethylene glycol monobutyl ether acetate are more preferable.
  • silicone resin composition A silicone resin composition is obtained by mixing a condensation-type silicone resin, which is a raw material of the condensation-type silicone resin cured product contained in the cured product of this embodiment, and a solvent.
  • the silicone resin composition may contain a curing catalyst, a filler, and other components described below.
  • the viscosity of the silicone resin composition is usually 100 to 500000 mPa ⁇ s, preferably 300 to 20000 mPa ⁇ s, more preferably 400 to 15000 mPa ⁇ s, and more preferably 500 to 10000 mPa ⁇ s at 25 ° C. More preferably. If the viscosity of the silicone resin composition is within the above range, when the wavelength conversion material is further included, the mixing property of the condensation type silicone resin and the wavelength conversion material is good, and the precipitation of the wavelength conversion material is suppressed. Is done.
  • the mixing method of the silicone resin A, the oligomer B, and the oligomer C is not particularly limited, and any known method that is performed when two or more kinds of polymers are mixed may be used.
  • the silicone resin A, the oligomer B, the oligomer C, and other components as necessary may be dissolved in an organic solvent, and then the obtained solution may be mixed.
  • the silicone resin can be mixed more uniformly and the stability of the prepared silicone resin composition can be improved, after dissolving the silicone resin in an organic solvent having high volatility and solubility, It is preferable to substitute the organic solvent with another solvent.
  • the silicone resin A is heated to a temperature near the boiling point of the solvent P and stirred to thereby form the silicone.
  • Resin A is dissolved in solvent P.
  • oligomer B, oligomer C, and other components as needed to the obtained solution oligomer B, oligomer C, and other components as needed in the same manner as above.
  • the ingredients are dissolved in solvent P.
  • a solvent having a lower volatility than the solvent P (for example, the solvent Q described above) is added to the obtained solution, and then the solvent P is distilled by heating until the concentration of the solvent P becomes 1% or less.
  • solvent Q can be performed. In order to efficiently perform solvent replacement, heat distillation may be performed under reduced pressure.
  • Residual solvent, water, and the like that can be contained in each of the silicone resin A, the oligomer B, the oligomer C, and other components can be removed by performing solvent substitution. Therefore, the stability of the silicone resin composition can be improved by solvent replacement.
  • the non-uniform domain size wrinkles of the cured product can be controlled.
  • the rate of temperature increase from 80 ° C to 125 ° C is preferably 4 ° C / min or more, and 4.5 ° C / min or more. More preferred.
  • the temperature rise rate in this temperature range the molecular motion at the initial stage of curing of the condensation-type silicone resin is activated, and the condensation reaction occurs simultaneously at various places, so the distance between the regions where the crosslinking points are dense is increased. Become.
  • the condensation type silicone resin being cured may be in a gel state and have fluidity when the temperature reaches 120 ° C. or higher. . In such a state, the domain formation reaction proceeds more effectively, and a large domain is formed early. The large domains formed in this way are immobilized by a late curing reaction.
  • the temperature rising rate from 125 ° C. to 180 ° C. is preferably 0.1 ° C. to 7 ° C./min.
  • the heterogeneous domain size can be controlled by the temperature increase rate in this temperature range. For example, when the rate of temperature increase is 0.1 ° C./min, a reaction in which a region having a denser cross-linking point is formed is likely to occur, so that the heterogeneous domain size can be set to 100 mm or more. Further, for example, if the temperature rising rate is 5.5 ° C./min, the curing reaction is completed before the reaction for forming a region where the crosslinking points are denser is completed. It can be made less than 100 mm.
  • a cured product having a large heterogeneous domain size is in an energetically stabilized state, and has high hardness, high crack resistance, and high heat resistance.
  • a curing accelerator such as a phosphoric acid catalyst or a metal catalyst may be added to the silicone resin.
  • Examples of the curing catalyst include R 2 in the structural unit represented by the above formula (A1), the structural unit represented by the above formula (A1 ′), and the structural unit represented by the above formula (A2).
  • inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid
  • organic acids such as formic acid, acetic acid, succinic acid, citric acid, propionic acid, butyric acid, lactic acid and succinic acid are used to promote the hydrolysis and condensation reaction.
  • inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid
  • organic acids such as formic acid, acetic acid, succinic acid, citric acid, propionic acid, butyric acid, lactic acid and succinic acid are used to promote the hydrolysis and condensation reaction.
  • the curing catalyst not only an acidic compound but also an alkaline compound can be used. Specifically, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, or the like can be used as a curing catalyst.
  • An organometallic compound catalyst can also be used as the curing catalyst.
  • an organometallic compound catalyst containing aluminum, zirconium, tin, titanium, or zinc can be used as the curing catalyst.
  • organometallic compound catalyst containing aluminum examples include aluminum triacetyl acetate and aluminum triisopropoxide.
  • organometallic compound catalyst containing zirconium examples include zirconium tetraacetylacetonate, zirconium tributoxyacetylacetonate, zirconium dibutoxydiacetylacetonate, zirconium tetranormal propoxide, zirconium tetraisopropoxide, zirconium tetranormal butoxide, Examples include zirconium acylate and zirconium tributoxy systemate.
  • organometallic compound catalyst containing tin examples include tetrabutyltin, monobutyltin trichloride, dibutyltin dichloride, dibutyltin oxide, tetraoctyltin, dioctyltin dichloride, dioctyltin oxide, tetramethyltin, dibutyltin laurate, dioctyltin laurate Rate, bis (2-ethylhexanoate) tin, bis (neodecanoate) tin, di-n-butylbis (ethylhexylmalate) tin, di-normal butylbis (2,4-pentanedionate) tin, di-normal Examples thereof include butyl butoxychlorotin, di-normal butyl diacetoxy tin, di-normal butyl dilaurate tin, and dimethyl dineodecanoate
  • titanium-containing organometallic compound catalyst examples include titanium tetraisopropoxide, titanium tetranormal butoxide, butyl titanate dimer, tetraoctyl titanate, titanium acetylacetonate, titanium octylene glycolate, and titanium ethyl acetoacetate.
  • organometallic compound catalyst containing zinc examples include zinc triacetylacetonate.
  • phosphoric acid ester or phosphoric acid is preferable, and phosphoric acid is more preferable.
  • the curing catalyst In order to add the curing catalyst to the silicone resin at a predetermined concentration, it is preferable to dilute the curing catalyst in water, an organic solvent, a silicone-based monomer, an alkoxysilane oligomer, etc., and then add it to the silicone resin.
  • the content of the curing catalyst can be appropriately adjusted in consideration of the temperature and time of the curing reaction of the silicone resin, the type of catalyst, and the like.
  • the content of the curing catalyst is preferably 0.01 parts by mass or more and 10 parts by mass or less, and more preferably 0.01 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the condensation type silicone resin.
  • 0.1 part by mass or more and 1 part by mass or less are particularly preferable.
  • the curing catalyst may be added to the silicone resin in advance, or may be added to the silicone resin immediately before the curing reaction of the silicone resin is performed.
  • a filler may be dispersed in the condensed silicone resin cured product.
  • a wavelength conversion material is preferable.
  • wavelength conversion materials include phosphors and quantum dots.
  • the phosphor include a red phosphor emitting fluorescence in the wavelength range of 570 nm to 700 nm, a green phosphor emitting fluorescence in the range of 490 nm to 570 nm, and a blue phosphor emitting fluorescence in the range of 420 nm to 480 nm.
  • red phosphor examples include europium-activated alkaline earth silicon nitride phosphors composed of fractured particles having a red fracture surface and represented by (Mg, Ca, Sr, Ba) 2 Si 5 N 8 : Eu.
  • a europium-activated rare earth oxychalcogenide phosphor composed of grown particles having a substantially spherical shape as a regular crystal growth shape and represented by (Y, La, Gd, Lu) 2 O 2 S: Eu;
  • red phosphors include fluorescence containing oxynitride and / or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W and Mo, or both. And phosphors containing an oxynitride having an alpha sialon structure in which a part or all of the Al element is substituted with a Ga element.
  • red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) 2 O 2 S: Eu; Eu such as Y (V, P) O 4 : Eu, Y 2 O 3 : Eu Activated oxide phosphor; (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, Mn, (Ba, Mg) 2 SiO 4 : Eu, Mn activated silicate phosphor such as Eu, Mn; (Ca Sr) Eu: Eu-activated sulfide phosphors such as Eu; YAlO 3 : Eu-activated aluminate phosphors such as Eu; LiY 9 (SiO 4 ) 6 O 2 : Eu, Ca 2 Y 8 (SiO 4 ) 6 O 2 : Eu, (Sr, Ba, Ca) 3 SiO 5 : Eu, Sr 2 BaSiO 5 : Eu-activated silicate phosphor such as Eu; (Y, Gd) 3 Al 5
  • Eu, Ce-activated nitride phosphors such as (Ca, Sr, Ba, Mg) 10 (PO 4 ) 6 (F, Cl, Br, OH): Eu, Mn-activated halophosphoric acid such as Eu, Mn Salt phosphor; ((Y, Lu, Gd, Tb) 1-x Sc x Ce y ) 2 (Ca, Mg) 1-r (Mg, Zn) 2+ r Si z-q Ge q O 12 + ⁇ , etc.
  • Examples include silicate phosphors.
  • red phosphors include red organic phosphors composed of rare earth element ion complexes having an anion such as ⁇ -diketonate, ⁇ -diketone, aromatic carboxylic acid and Bronsted acid as ligands, and perylene pigments (for example, Dibenzo ⁇ [f, f ′]-4,4 ′, 7,7′-tetraphenyl ⁇ diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone pigment, Lake pigments, azo pigments, quinacridone pigments, anthracene pigments, isoindoline pigments, isoindolinone pigments, phthalocyanine pigments, triphenylmethane basic dyes, indanthrone pigments, indophenol pigments, Examples thereof include cyanine pigments and dioxazine pigments.
  • perylene pigments for example, Dibenzo ⁇ [f, f
  • a red phosphor having a peak wavelength of fluorescence emission of 580 nm or more, preferably 590 nm or more and a peak wavelength of fluorescence emission of 620 nm or less, preferably 610 nm or less is suitable as an orange phosphor.
  • orange phosphors include (Sr, Ba) 3 SiO 5 : Eu, (Sr, Mg) 3 PO 4 ) 2 : Sn 2+ , and SrCaAlSiN 3 : Eu.
  • yellow phosphors include oxide-based, nitride-based, oxynitride-based, sulfide-based, and oxysulfide-based phosphors.
  • RE 3 M 5 O 12 Ce (where RE represents at least one element selected from the group consisting of Y, Tb, Gd, Lu and Sm, and M represents Al, Ga and Represents at least one element selected from the group consisting of Sc), M 2 3 M 3 2 M 4 3 O 12 : Ce (where M 2 represents a divalent metal element, and M 3 represents trivalent).
  • M 4 represents a tetravalent metal element garnet phosphor having a garnet structure represented by like; AE 2 M 5 O 4: Eu ( here, AE is, Ba, Sr , And at least one element selected from the group consisting of Ca, Mg and Zn, and M 5 represents at least one element selected from the group consisting of Si and Ge.
  • Oxynitride-based phosphor obtained by substituting a part of oxygen atoms are formed elemental nitrogen atom; AEAlSiN 3: Ce (here, AE is at least 1 selected from the group consisting of Ba, Sr, Ca, Mg and Zn And phosphors activated with Ce such as a nitride-based phosphor having a CaAlSiN 3 structure.
  • yellow phosphors include sulfide phosphors such as CaGa 2 S 4 : Eu (Ca, Sr) Ga 2 S 4 : Eu, (Ca, Sr) (Ga, Al) 2 S 4 : Eu; Examples include phosphors activated with Eu such as oxynitride phosphors having a SiAlON structure such as x (Si, Al) 12 (O, N) 16 : Eu.
  • Green phosphor for example, a europium-activated alkaline earth silicon oxynitride fluorescent material composed of fractured particles having a fracture surface and represented by (Mg, Ca, Sr, Ba) Si 2 O 2 N 2 : Eu Body: Europium-activated alkaline earth silicate phosphors composed of fractured particles having a fractured surface and represented by (Ba, Ca, Sr, Mg) 2 SiO 4 : Eu.
  • green phosphors include Eu-activated aluminate phosphors such as Sr 4 Al 14 O 25 : Eu, (Ba, Sr, Ca) Al 2 O 4 : Eu; (Sr, Ba) Al 2 Si 2 O 8 : Eu, (Ba, Mg) 2 SiO 4 : Eu, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, (Ba, Sr, Ca) 2 (Mg, Zn) Si 2 O 7 : Eu Eu activated silicate phosphor such as Y 2 SiO 5 : Ce, Tb activated silicate phosphor such as Ce, Tb; Eu activated such as Sr 2 P 2 O 7 —Sr 2 B 2 O 5 : Eu Borate phosphate phosphor; Sr 2 Si 3 O 8 -2SrCl 2 : Eu-activated halosilicate phosphor such as Eu; Zn 2 SiO 4 : Mn-activated silicate phosphor such as Mn; CeMgAl 11 O
  • green phosphors include pyridine-phthalimide condensed derivatives, benzoxazinone-based, quinazolinone-based, coumarin-based, quinophthalone-based, naltalimide-based fluorescent dyes; terbium complexes having hexyl salicylate as a ligand, etc. And organic phosphors.
  • a europium-activated barium magnesium aluminate phosphor composed of grown particles having a substantially hexagonal shape as a regular crystal growth shape and represented by BaMgAl 10 O 17 : Eu; a regular crystal growth shape A europium-activated calcium halophosphate phosphor expressed by (Ca, Sr, Ba) 5 (PO 4 ) 3 Cl: Eu; a substantially cubic shape as a regular crystal growth shape A europium-activated alkaline earth chloroborate-based phosphor represented by (Ca, Sr, Ba) 2 B 5 O 9 Cl: Eu; a fractured particle having a fracture surface (Sr , Ca, Ba) Al 2 O 4: Eu or (Sr, Ca, Ba) 4 Al 1 4O 25: Eu Europium-activated alkaline earth aluminate phosphors represented the like.
  • blue phosphors include Sn-activated phosphate phosphors such as Sr 2 P 2 O 7 : Sn; Sr 4 Al 14 O 25 : Eu, BaMgAl 10 O 17 : Eu, BaAl 8 O 13 : Eu, etc.
  • Eu-activated aluminate phosphors Ce-activated thiogallate phosphors such as SrGa 2 S 4 : Ce, CaGa 2 S 4 : Ce; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, BaMgAl 10 O 17 : Eu-activated aluminate phosphor such as Eu, Tb, Sm; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, Mn-activated aluminate phosphor such as Eu, Mn; (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, (Ba, Sr, Ca) 5 (PO 4 ) 3 (Cl, F, Br, OH): Eu-activated halophosphoric acid such as Eu, Mn, Sb Salt phosphor; B Al 2 Si 2 O 8: Eu , (Sr, Ba) 3 MgSi 2 O 8: Eu -activated silicate phosphors
  • blue phosphors examples include fluorescent dyes such as naphthalic acid imide compounds, benzoxazole compounds, styryl compounds, coumarin compounds, pyrarizone compounds, triazole compounds, and organic phosphors such as thulium complexes. .
  • These phosphors may be used alone or in combination of two or more.
  • the content of the wavelength conversion material is usually 20% by mass to 95% by mass and 40% by mass to 95% by mass with respect to the total content of the condensed silicone resin cured product and the wavelength conversion material. It is preferably 50% by mass or more and 95% by mass or less, and more preferably 60% by mass or more and 95% by mass or less.
  • the cured product of the present embodiment may contain a silicone filler.
  • the silicone filler include a silicone resin filler and a silicone rubber filler.
  • the cured product of this embodiment may contain additives such as inorganic particles and a silane coupling agent in addition to the condensed silicone resin cured product and the filler.
  • Inorganic particles can scatter light in the hardened
  • inorganic particles include oxides such as silicon, titanium, zirconia, aluminum, iron, and zinc, carbon black, barium titanate, calcium silicate, and calcium carbonate, and oxidation of silicon, titanium, zirconia, aluminum, and the like. Things are preferred.
  • Examples of the shape of the inorganic particles include a substantially spherical shape, a plate shape, a columnar shape, a needle shape, a whisker shape, and a fiber shape, and a substantially uniform composition is obtained, so that a substantially spherical shape is preferable.
  • the inorganic particles contained in the cured product of the present embodiment may be only one type or two or more types, but are preferably two or more types of inorganic particles having different particle sizes.
  • the cured product of the present embodiment more preferably includes inorganic particles having an average primary particle diameter of 100 nm to 500 nm and inorganic particles having an average primary particle diameter of less than 100 nm. preferable.
  • the average particle diameter of the primary particles of the inorganic particles can be determined by, for example, an image imaging method in which the particles are directly observed with an electron microscope or the like. Specifically, first, a liquid in which inorganic particles to be measured are dispersed in an arbitrary solvent is prepared, and the obtained dispersion liquid is dropped on a slide glass or the like and dried. Alternatively, inorganic particles may be directly sprayed on the adhesive surface of the adhesive tape to produce inorganic particles attached thereto. Next, the average particle diameter of the primary particles of the inorganic particles is obtained by directly observing the particles with a scanning electron microscope (SEM) or a transmission electron microscope (TEM) and determining the size of the inorganic particles from the obtained shape. It is done.
  • SEM scanning electron microscope
  • TEM transmission electron microscope
  • the content of the inorganic particles is preferably 0.01 parts by mass or more and 100 parts by mass or less, and preferably 0.1 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the cured silicone resin product. More preferred.
  • silane coupling agent examples include at least one group selected from the group consisting of a vinyl group, an epoxy group, a styryl group, a methacryl group, an acrylic group, an amino group, a ureido group, a mercapto group, a sulfide group, and an isocyanate group.
  • a coupling agent having an epoxy group or a mercapto group is preferable.
  • silane coupling agent examples include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxy.
  • examples thereof include propylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane.
  • a composition containing a silicone resin contains a silane coupling agent
  • the silicon atom contained in the silane coupling agent is also detected as a 29 Si-NMR signal.
  • a composition containing a silicone resin is used.
  • the signal of the silane coupling agent shall be included in the calculation of the signal area.
  • the content of the silane coupling agent is preferably 0.0001 parts by mass or more and 1.0 parts by mass or less, and 0.001 parts by mass or more and 0.1 parts by mass with respect to 100 parts by mass of the total content of the silicone resin. It is more preferable that the amount is not more than parts.
  • cured material of this embodiment may also contain additives other than the above-mentioned material.
  • additives other than the above-described materials include dispersants, leveling agents, and antifoaming agents.
  • the condensed silicone resin cured product contained in the cured product of the present embodiment preferably includes a structural unit represented by the above formula (A3). Further, the condensed silicone resin cured product is selected from the group consisting of the structural unit represented by the above formula (A1), the structural unit represented by the above formula (A1 ′), and the structural unit represented by the above formula (A2). More preferably, it further contains one or more selected structural units.
  • the condensed silicone resin cured product contained in the cured product of the present embodiment is represented by the above formula (C1), the above formula (C1 ′), the above formula (C2), the above formula (C3), or the above formula (C4). Further structural units may be included.
  • the content of the T3 body is 50 mol% or more with respect to the total content of all structural units of the condensed silicone resin cured product.
  • the content of T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms of the condensed silicone resin cured product.
  • the content of T3 silicon atoms is more preferably 60 mol% or more, further preferably 70 mol% or more, with respect to the total content of all silicon atoms of the condensed silicone resin cured product, More preferably, it is 75 mol% or more.
  • a cured product having a non-uniform domain size of 50 mm or more When a cured product having a non-uniform domain size of 50 mm or more is stressed, the stress can be dispersed throughout the cured product. On the other hand, a cured product having a non-uniform domain size of less than 50 mm has a uniform distribution of T3 silicon atoms. Therefore, when stress is applied, the stress cannot be dispersed throughout the cured product, and cracks are easily generated.
  • a cured product having a non-uniform domain size of 50 mm or more has both high hardness and high crack resistance. For example, even when continuously heated at 250 ° C., the stress caused by heating is dispersed throughout the cured product. Can be made.
  • a cured product having both high hardness, high crack resistance, and high heat resistance can be provided.
  • FIG. 2 is a schematic diagram showing the wavelength conversion sheet of the present embodiment.
  • the wavelength conversion sheet 30 is formed of a cured product that includes a condensed silicone resin cured product 40 and a filler 50 that is a wavelength conversion material dispersed in the condensed silicone resin cured product 40.
  • Such a wavelength conversion sheet 30 is formed into a thin plate shape using the above-described cured product of the present embodiment as a forming material.
  • the wavelength conversion sheet 30 may include a base material on one surface.
  • a base material what is necessary is just to select suitably by the use of a wavelength conversion sheet
  • metal base materials such as aluminum
  • Transparent base materials such as quartz and sapphire, are mentioned.
  • the wavelength conversion sheet of the present embodiment can be used for wavelength conversion in LEDs, solar cells, semiconductor lasers, photodiodes, CCDs, CMOSs, and the like.
  • the wavelength conversion sheet of this embodiment is excellent in heat resistance, it can be suitably used for a light emitting part of a semiconductor laser that is expected to be used at high temperatures.
  • the wavelength conversion sheet of this embodiment may contain the inorganic particles described above.
  • the wavelength conversion material can be effectively excited by scattering light in the wavelength conversion sheet. Moreover, it can suppress that a wavelength conversion material settles in the composition containing a silicone resin in the manufacture stage of a wavelength conversion sheet.
  • the thickness (film thickness) of the wavelength conversion sheet is preferably 10 ⁇ m or more.
  • the thickness of the wavelength conversion sheet is preferably 1 mm or less, more preferably 500 ⁇ m or less, and even more preferably 200 ⁇ m or less from the viewpoint of enhancing the optical properties and heat resistance of the wavelength conversion sheet.
  • the thickness of the wavelength conversion sheet is 1 mm or less, light absorption and light scattering by the silicone resin can be reduced.
  • the film thickness of the wavelength conversion sheet can be determined, for example, by measuring the film thickness at a plurality of locations of the wavelength conversion sheet using a micrometer and calculating the average value.
  • the plurality of locations may include a total of five locations including one central portion of the wavelength conversion sheet and four corner portions of the wavelength conversion sheet.
  • the wavelength conversion sheet 30 may be formed on a support base material.
  • a support base material a base material using a known metal, film, glass, ceramic, paper, or the like as a forming material can be used.
  • the material for forming the supporting substrate include transparent inorganic oxide glasses such as quartz glass, borosilicate glass, and sapphire; metal plates and foils such as aluminum (including aluminum alloys), zinc, copper, and iron; cellulose acetate Polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, aramid and other plastic films; paper laminated with the plastic; paper coated with the plastic; Examples include a paper on which the metal is laminated or vapor-deposited; and a plastic film on which the metal is laminated or vapor-deposited. Among these, inorganic oxide glass or a metal plate is preferable.
  • the thickness of the supporting substrate is preferably 30 ⁇ m or more, and more preferably 50 ⁇ m or more. When the thickness of the support substrate is 30 ⁇ m or more, the support substrate has sufficient strength to protect the shape of the wavelength conversion sheet.
  • the thickness of the supporting substrate is preferably 5000 ⁇ m or less, more preferably 3000 ⁇ m or less, from the viewpoint of economy.
  • a wavelength conversion material-containing silicone resin composition in which a wavelength conversion material is dispersed in the above-described silicone resin composition (condensation type silicone resin + solvent) is prepared.
  • the wavelength conversion material-containing silicone resin composition may contain additives such as inorganic particles and adhesion aids. .
  • a wavelength conversion material-containing silicone resin composition can be obtained by uniformly mixing and dispersing using a known stirring and kneading machine.
  • known stirring and kneading machines include a homogenizer, a self-revolving stirrer, a three-roller, a ball mill, a planetary ball mill, and a bead mill.
  • the wavelength conversion material-containing silicone resin composition may be defoamed under vacuum or reduced pressure as necessary.
  • the obtained wavelength conversion material-containing silicone resin composition is applied onto a supporting substrate.
  • coating of the wavelength conversion material containing silicone resin composition can be performed using a well-known coating device.
  • Known coating devices include, for example, reverse roll coaters, blade coaters, slit die coaters, direct gravure coaters, offset gravure coaters, reverse roll coaters, blade coaters, kiss coaters, natural roll coaters, air knife coaters, roll blade coaters, varistors. Examples include a bar roll blade coater, a two stream coater, a rod coater, a wire bar coater, an applicator, a dip coater, a curtain coater, a spin coater, and a knife coater. Among these, a slit die coater or an applicator is preferable because the film thickness of the obtained wavelength conversion sheet tends to be uniform.
  • the coating film formed on the support substrate is heated and cured to obtain a wavelength conversion sheet.
  • the coating film is heated using a natural convection oven, a blower oven, a vacuum oven, an inert oven, a hot plate, a hot press, an infrared heater, or the like.
  • a blower oven is preferable from the viewpoint of productivity.
  • Examples of the heating conditions for the coating film include a method of heating at 40 ° C. to 250 ° C. for 5 minutes to 100 hours.
  • the heating time is preferably 1 to 30 hours, more preferably 2 to 10 hours, still more preferably 3 to 8 hours. When the heating time is within this range, the solvent can be sufficiently removed and coloring during heating can be prevented.
  • the coating film After coating the wavelength conversion material-containing silicone resin composition on the support substrate, the coating film may be cured by leaving it in an atmosphere having a temperature of 250 ° C. or lower. The coating film may be cured by leaving it in the atmosphere. Further, when curing the coating film, in order to reduce the solvent and water present in the wavelength conversion material-containing silicone resin composition, and to control the condensation reaction rate between the silicone resin A and the silicone oligomer, for example, The coating film is formed in stages, such as at 40 to 60 ° C. for 5 to 30 minutes, then at 60 to 100 ° C. for 10 to 60 minutes, and then at 140 to 200 ° C. for 30 to 5 hours. It may be cured.
  • cured material which forms a wavelength conversion sheet can be enlarged by making the temperature increase rate from 80 degreeC to 125 degreeC into 4 degrees C / min or more.
  • the coating film may be in a gel state and have fluidity when the temperature reaches 120 ° C. or higher. In such a state, the domain formation reaction proceeds more effectively, and a large domain is formed at an early stage, which is preferable.
  • the temperature rising rate from 125 ° C. to 180 ° C. is preferably 0.1 ° C. to 7 ° C./min.
  • the nonuniform domain size of the cured product forming the wavelength conversion sheet can be controlled by the temperature increase rate in this temperature range. For example, when the rate of temperature rise is 0.1 ° C./min, a reaction in which a region having a denser crosslinking point is formed is likely to occur. Therefore, the non-uniform domain size ⁇ of the cured product forming the wavelength conversion sheet is 100 ⁇ . This can be done.
  • the non-uniform domain size wrinkle of the cured product can be 50 mm or more and less than 100 mm.
  • the non-uniform domain size of the cured product forming the wavelength conversion sheet becomes larger and the non-uniform domain size is fixed in a large state.
  • the wavelength conversion sheet of this embodiment uses the cured product of this embodiment as a forming material, it has high hardness, high crack resistance, and high heat resistance, and has high reliability.
  • FIG. 3 is a schematic view showing the light emitting device of this embodiment.
  • the light emitting device 100 includes the wavelength conversion sheet 30 and the light source 60 described above.
  • the light source 60 a known light source such as a mercury lamp or a semiconductor light emitting element can be used.
  • a light source that emits high-density energy such as a high-intensity LED or a semiconductor laser, or a light source that emits high-energy ultraviolet light having a wavelength of 400 nm or less and 300 nm or less is used.
  • the light source 60 includes a substrate 70 and a light emitting element 80 provided on one surface of the substrate 70.
  • the wavelength conversion sheet 30 is disposed at a position where the light L1 emitted from the light source 60 is incident.
  • the light L1 emitted from the light source 60 enters the wavelength conversion sheet 30.
  • the filler 50 which is a wavelength conversion material, converts the light L1 into converted light L2 having a wavelength different from that of the light L1.
  • the converted light L2 is emitted from the wavelength conversion sheet 30.
  • FIG. 4 is a cross-sectional view showing the structure of a light emitting device provided with the wavelength conversion sheet of the present embodiment.
  • the light emitting device 1000 includes a substrate 110, a semiconductor laser element (light source) 120, a light guide unit 130, a wavelength conversion sheet 140, and a reflecting mirror 150.
  • the wavelength conversion sheet 140 can be configured as described above.
  • the semiconductor laser element 120 is set on the substrate 110.
  • the light guide unit 130 receives the laser beam La emitted from the semiconductor laser element 120 and guides the laser beam La therein.
  • the semiconductor laser element 120 is optically connected to one end of the light guide unit 130, and the wavelength conversion sheet 140 is optically connected to the other end.
  • the light guide unit 130 has a weight shape in which the width gradually decreases from one end side to the other end side, and the laser light La emitted from the semiconductor laser element 120 is focused on the wavelength conversion sheet 140. .
  • the reflecting mirror 150 is a bowl-shaped member disposed around the wavelength conversion sheet 140, and a curved surface facing the wavelength conversion sheet 140 is a light reflecting surface.
  • the reflecting mirror 150 deflects the light emitted from the wavelength conversion sheet 140 toward the front of the apparatus (irradiation direction of the laser light La).
  • the laser light La irradiated on the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140 and output from the light emitting device 1000.
  • the light emitting device 1000 has one semiconductor laser element 120, but may have two or more.
  • FIG. 5 is a cross-sectional view showing a modification of the light emitting device. 5 and the following description, the same components as those described in FIG. 4 are denoted by the same reference numerals as those in FIG.
  • the light emitting device 1100 includes a plurality of substrates 110, a plurality of semiconductor laser elements (light sources) 120, a plurality of optical fibers 180, a light guide unit 130, a wavelength conversion sheet 140, a reflecting mirror 150, and a transparent support 190. have.
  • the optical fiber 180 receives the laser beam La emitted from the semiconductor laser element 120 and guides the laser beam La therein.
  • a semiconductor laser element 120 is optically connected to one end of each of the plurality of optical fibers 180.
  • the plurality of optical fibers 180 are bundled on the other end side, and are optically connected to the light guide unit 130 at the other end in a bundled state.
  • the light guide unit 130 receives the laser beam La emitted from the semiconductor laser element 120 therein, guides the laser beam La therein, and then emits the laser beam La toward the front of the apparatus.
  • the light guide unit 130 may have a function of condensing the laser light La emitted to the front of the apparatus.
  • the wavelength conversion sheet 140 is disposed so as to be separated from the light guide unit 130 and opposed to the light guide unit 130 while being supported by the transparent support 190.
  • the transparent support 190 is provided in front of the apparatus so as to cover the opening of the reflecting mirror 150.
  • the transparent support 190 is a member made of a transparent material that does not deteriorate due to heat generated during use of the apparatus, and for example, a glass plate can be used.
  • the laser light La irradiated on the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140 and is output from the light emitting device 1100.
  • the light source semiconductor laser element 120
  • the light emitting unit wavelength conversion sheet 140
  • the light emitting device having the above-described configuration includes the wavelength conversion sheet of the present embodiment having both high hardness, high crack resistance, and high heat resistance, the light emitting device has high reliability.
  • FIG. 6 is a cross-sectional view of the semiconductor light emitting device 200 of this embodiment.
  • the semiconductor light emitting device of this embodiment can also be used as a light source of the light emitting device in FIGS.
  • the semiconductor light emitting device 200 includes a substrate 210, a semiconductor light emitting element 220 disposed on the substrate, and a sealing member 230 that seals the semiconductor light emitting element 220.
  • the sealing member 230 uses the above-described cured product as a forming material.
  • the semiconductor light emitting element 220 is covered and sealed by the substrate 210 and the sealing member 230 and is isolated from the outside air.
  • the cured product constituting the sealing member 230 has both high hardness, high crack resistance, and high heat resistance as described above. Moreover, compared with the sealing part comprised with quartz glass, the transmittance
  • the cured product constituting the sealing member 230 includes a condensed silicone resin cured product as a constituent element, the cured product is hardly deteriorated by UV light. Therefore, the semiconductor light emitting device 200 having the sealing member 230 of the present embodiment is deteriorated even if the semiconductor light emitting element 220 that is a light source is a UV light source having an emission wavelength of 400 nm or less, and further 300 nm or less. It is difficult and reliable.
  • the semiconductor light emitting element 220 is not limited to one that emits UV light.
  • the emission wavelength of the semiconductor light emitting device 220 may be in the ultraviolet region (for example, 10 to 400 nm), in the visible light region (for example, more than 400 nm and less than 830 nm), or in the infrared region (for example, 830 nm to 1000 nm). It may be.
  • the sealing member having the above-described configuration uses the above-described cured product of the present embodiment as a forming material, the sealing member has high reliability. Moreover, since the semiconductor light-emitting device having the above configuration includes a sealing member that uses the cured product of the present embodiment described above as a forming material, the reliability is high.
  • the obtained sample was evaluated or measured by the following method.
  • ⁇ Crack resistance> 1.2 g of the silicone resin composition was added to an aluminum cup having a diameter of 4 cm and cured. About the obtained hardened
  • the average value of the load (bending fracture load, unit N) when the test piece was broken was defined as the bending strength.
  • a specimen having a bending strength of 20 MPa or more was considered good.
  • the average value of the fracture displacement (amount of deflection at break, unit mm) when the test piece was broken was defined as the strain at break.
  • a specimen having a strain at break of 3.0% or more was regarded as good.
  • ⁇ Heat resistance> A condensed silicone resin cured product (a disk shape having a diameter of 4 cm and a thickness of 500 ⁇ m) was heated in an oven at 250 ° C. About the hardened
  • a durometer (manufactured by Teclock Co., Ltd., model number GS-720G, type D) mounted on an automatic low-pressure loader for durometer (manufactured by Teclock Co., Ltd., model number GS-610) was used as a measuring device.
  • the durometer is a rubber / plastic hardness meter. Using this measuring apparatus, the Shore D hardness of the cured silicone resin was measured at a descending speed of 1 mm / second. Measurement was carried out at five locations, and the average value was calculated.
  • a cured product of a condensation type silicone resin having a Shore D hardness of 70 or more was considered good.
  • ⁇ Transmissivity> A cured product having a thickness of 500 ⁇ m was prepared. About the obtained hardened
  • a cured product having a transmittance of 85% or more was considered good.
  • Measuring device Small-angle X-ray scattering device (NanoSTAR, Bruker AXS Co., Ltd.)
  • Light source Rotating anti-cathode type X-ray generator of Cu target. Output 50kV, 100mA.
  • Two-dimensional detector Two-dimensional multi wire detector, Hi-STAR Degree of vacuum in the device: 40 Pa Analysis software: SAXS Ver. 4.1.29 (Bruker AXS)
  • the silicone cured product was pulverized using a freeze pulverizer.
  • a freeze pulverizer JFC-300 manufactured by Nippon Kogyo Co., Ltd. was used.
  • the silicone cured product was allowed to stand in liquid nitrogen for 10 minutes and then pulverized for 15 minutes.
  • FIG. 7 is an SEM photograph of the cured silicone after pulverization.
  • the swollen sample (sample) was irradiated with X-rays, and the small-angle X-ray scattering of the swollen sample was measured.
  • the length from the swollen sample to the detector was 106 cm, and the size of the direct beam stopper was 2 mm ⁇ .
  • the range of measurable scattering angle 2 ⁇ was 0.08 to 3 °.
  • the measurement result was analyzed using analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS, and a small-angle X-ray small-angle scattering spectrum was obtained.
  • SAXS Ver. 4.1.29 analysis software manufactured by Bruker AXS
  • blank measurement using a quartz cell into which no swollen sample was added was performed in the same manner as described above.
  • the horizontal axis represents the wave number of X-rays used in the measurement of small-angle X-ray scattering of the swollen sample, and blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the swollen sample
  • a graph in which the measured values of small-angle X-ray scattering of the swollen sample were plotted with the scattering intensity obtained by subtracting the ordinate as the vertical axis was prepared.
  • the initial values of the fitting were 1 ⁇ ⁇ ⁇ 50 ⁇ and 1 ⁇ ⁇ ⁇ 250 ⁇ .
  • the alkoxysilicone oligomer corresponds to “oligomer B” in the present specification.
  • the low molecular silicone corresponds to “oligomer C” in the present specification.
  • the sum of the peak areas existing in a region having a weight average molecular weight of 7500 or more is 20% or more of the total peak area, and the peak existing in a region having a weight average molecular weight of 1000 or less.
  • the total area was 30% or more with respect to the total peak area.
  • the structural units contained in the silicone resin A are shown in Table 1.
  • Table 2 shows the structural units contained in the low molecular silicone.
  • the alkoxysilicone oligomer contained 95% or more of a resin composed of the structural units shown in Table 3.
  • the abundance ratio of the structural units of each condensation type silicone resin shown in Tables 1 to 3 is a value calculated based on the measurement result of solution NMR measured under the following conditions.
  • the obtained mixture is set in an evaporator, the temperature of the mixture is 85 ° C., and the degree of vacuum of the evaporator is 2.0 kPa. Then, the total concentration of propyl acetate and isopropyl alcohol in the mixture is 1% by mass or less. Until then, propyl acetate and isopropyl alcohol were distilled off.
  • the obtained silicone resin composition is heated stepwise from room temperature (25 ° C.) to 80 ° C., 125 ° C. and 180 ° C., held at 80 ° C. for 30 minutes, held at 125 ° C. for 30 minutes, and held at 180 ° C. for 60 minutes.
  • the step cure which hardens by doing was implemented. Specifically, the temperature was raised from room temperature (25 ° C.) to 80 ° C. at 1.4 ° C./min and held at 80 ° C. for 30 minutes. Subsequently, it heated up to 125 degreeC at 4.5 degreeC / min, and hold
  • the SAXS profile was created from the result of the SAXS measurement.
  • the SAXS profile is shown in FIG. In FIG. 8, the horizontal axis Q indicates the wave number (unit: ⁇ -1 ) of X-rays used in the measurement of small-angle X-ray scattering.
  • the vertical axis I indicates the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the cured silicone resin cured product. From the created SAXS profile, it was confirmed that the heterogeneous domain size ⁇ was 74 ⁇ .
  • the obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
  • Example 2 About the thermosetting conditions of the silicone resin composition in Example 1, the hardened
  • a SAXS profile was created from the results of SAXS measurement.
  • the created SAXS profile is shown in FIG. From the created SAXS profile, it was confirmed that the heterogeneous domain size ⁇ was 134 ⁇ .
  • the obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
  • the abundance ratio of the structural unit of the silicone resin B shown in Table 4 is a value calculated based on the measurement result of the solution NMR described above.
  • Silicone resin B corresponds to “condensation type silicone resin” in the present specification.
  • the obtained silicone resin composition was thermally cured under the same conditions as the silicone resin composition in Example 2 to obtain a cured product.
  • the obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
  • the obtained silicone composition composition was heated from room temperature to 150 ° C. and kept at 150 ° C. for 5 hours to be thermoset. Specifically, the temperature was raised from 25 ° C. (room temperature) to 40 ° C. at 3 ° C./min and held at 40 ° C. for 10 minutes. Next, the temperature was raised to 150 ° C. at 4 ° C./min and held at 150 ° C. for 5 hours. Then, the hardened
  • a SAXS profile was created from the results of SAXS measurement.
  • the created SAXS profile is shown in FIG. From the created SAXS profile, it was confirmed that the heterogeneous domain size ⁇ was 36 ⁇ .
  • the obtained cured product had cracks and had poor crack resistance.
  • the obtained cured product was not large enough to measure the bending strength, Shore D hardness and transmittance.
  • a cured product having both high hardness, high crack resistance and high heat resistance can be provided.
  • cured material as a forming material, a light-emitting device, the member for sealing, and a semiconductor light-emitting device can be provided.

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Abstract

The invention provides a cured product having high hardness, high crack-resistance, and high heat-resistance, simultaneously. The cured product contains a condensation-type silicone resin cured product and satisfies (1) and (2). (1) In a solid 29Si-nuclear magnetic resonance spectrum of the condensation-type silicone resin cured product, a peak attributable to a T-body silicon atom (silicon atom bonded to three oxygen atoms) is present. (2) The non-uniform domain size is 50 Å or greater (value obtained by: impregnating with tetrahydrofuran and thereby causing a swelling of the condensation-type silicone resin cured product; plotting a graph of the small-angle X-ray scattering measurement values for this sample, with the X-ray wavenumber on the horizontal axis, and the scattering intensities comprising the measured scattering intensities minus the blank scattering on the vertical axis; and fitting the graph with formula (A)). (In the formula, ξ represents the network mesh size, Ξ represents the non-uniform domain size, I(q) represents the scattering intensity, q represents the wavenumber, A and B represent fitting constants).

Description

硬化物、波長変換シート、発光装置、封止用部材および半導体発光装置Cured product, wavelength conversion sheet, light emitting device, sealing member, and semiconductor light emitting device
 本発明は、硬化物、波長変換シート、発光装置、封止用部材および半導体発光装置に関する。 The present invention relates to a cured product, a wavelength conversion sheet, a light emitting device, a sealing member, and a semiconductor light emitting device.
 近年、半導体レーザー(LD、Laser Diode)または発光ダイオード(LED、Light Emitting Diode)を用いた発光装置が検討されている。
 半導体レーザーは、高電流密度域においても高い変換効率を維持できる。また、半導体レーザーは、発光部と励起部とを分離させることで装置の小型化が可能である。そのため、半導体レーザーを照明装置に用いることが期待されている。
 発光ダイオードは、最近の技術開発の進展により、高輝度化が進んでいる。
In recent years, a light emitting device using a semiconductor laser (LD, Laser Diode) or a light emitting diode (LED, Light Emitting Diode) has been studied.
The semiconductor laser can maintain high conversion efficiency even in a high current density region. In addition, the semiconductor laser can be downsized by separating the light emitting portion and the excitation portion. Therefore, it is expected that a semiconductor laser is used for the lighting device.
Light-emitting diodes are becoming brighter due to recent technological developments.
 発光装置に用いられる透明材料として、シリコーン樹脂硬化物が知られている。例えば、特許文献1には、LEDの蛍光体シートのマトリックス材として、重合性のシリコーン樹脂の硬化物を用いることが記載されている。シリコーン樹脂硬化物は、光透過性に優れるだけでなく、耐熱性およびUV耐性にも優れる。そのため、シリコーン樹脂硬化物を形成材料とする部材は、長期間使用される発光装置に用いた場合であっても劣化しにくいため、好適である。 A cured silicone resin is known as a transparent material used in a light emitting device. For example, Patent Document 1 describes that a cured product of a polymerizable silicone resin is used as a matrix material of a phosphor sheet of an LED. The cured silicone resin not only has excellent light transmittance, but also has excellent heat resistance and UV resistance. Therefore, a member using a cured silicone resin as a forming material is suitable because it hardly deteriorates even when used in a light-emitting device that is used for a long period of time.
特開2013-1792号公報JP 2013-1792 A
 高硬度のシリコーン樹脂硬化物を形成材料とする部材は、傷がつきにくいという利点がある。一方、高硬度のシリコーン樹脂硬化物は、硬化の際にクラックが生じやすいため、歩留まりが低下しやすいという欠点がある。また、高硬度のシリコーン樹脂硬化物は、使用の際に、熱応力等に起因するクラックが生じやすいという欠点がある。そのため、高硬度のシリコーン樹脂硬化物であって、硬化の際にクラックが生じにくく、加熱の際にクラックが生じにくいシリコーン樹脂硬化物が求められていた。 A member made of a hardened silicone resin cured material has an advantage that it is difficult to be damaged. On the other hand, the hardened silicone resin cured product has a disadvantage that the yield tends to decrease because cracks are likely to occur during curing. Further, a hardened silicone resin cured product has a drawback that cracks due to thermal stress or the like are likely to occur during use. Therefore, there has been a demand for a cured silicone resin having a high hardness, which is less likely to crack during curing and less likely to crack during heating.
 以下の説明においては、「硬化の際にクラックが生じにくい性質」のことを「クラック耐性」と称することがある。また、「加熱の際にクラックが生じにくい性質」のことを「耐熱性」と称することがある。 In the following description, “the property that cracks hardly occur during curing” may be referred to as “crack resistance”. In addition, “the property that cracks are less likely to occur during heating” may be referred to as “heat resistance”.
 半導体レーザーまたはUV-LEDを用いた発光装置においては、部材に高いエネルギー密度の光が照射されることがある。また、高輝度のLEDを用いた発光装置においては、使用時の発熱により、部材が高温に曝されることがある。そのため、これらの発光装置に用いられる部材には、高い耐熱性が求められていた。 In a light emitting device using a semiconductor laser or UV-LED, a member may be irradiated with light having a high energy density. Moreover, in the light-emitting device using high-intensity LED, a member may be exposed to high temperature by the heat_generation | fever at the time of use. Therefore, high heat resistance has been required for members used in these light emitting devices.
 本発明は、このような事情に鑑みてなされたものであって、高硬度と高いクラック耐性と高い耐熱性とを兼ね備えた硬化物を提供することを目的とする。また、当該硬化物を形成材料とする波長変換シート、発光装置、封止用部材および半導体発光装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and an object thereof is to provide a cured product having both high hardness, high crack resistance, and high heat resistance. It is another object of the present invention to provide a wavelength conversion sheet, a light emitting device, a sealing member, and a semiconductor light emitting device using the cured product as a forming material.
 上記の課題を解決するため、本発明は以下の[1]~[13]を提供する。 In order to solve the above problems, the present invention provides the following [1] to [13].
[1]縮合型シリコーン樹脂硬化物を含み、下記(1)および(2)を満たす硬化物。

(1)前記縮合型シリコーン樹脂硬化物の固体29Si-核磁気共鳴スペクトルにおいて、T体のケイ素原子に帰属されるピークが存在する。
(ここで、T体のケイ素原子とは、3個の酸素原子と結合しているケイ素原子を意味する。)

(2)下記の不均一ドメインサイズが50Å以上である。
(ここで、不均一ドメインサイズとは、
 前記縮合型シリコーン樹脂硬化物をテトラヒドロフランに含浸させて膨潤させた試料の小角X線散乱の測定値を、
 小角X線散乱の測定で用いるX線の波数を横軸とし、小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、プロットすることにより得られるグラフを、
 下記式(A)でフィッティングすることにより得られる値である。)
Figure JPOXMLDOC01-appb-M000003
(ここで、ξは網目メッシュサイズを表し、Ξは不均一ドメインサイズを表し、I(q)は散乱強度を表し、qは波数を表し、AおよびBはフィッティング定数を表す。)

[2]前記縮合型シリコーン樹脂硬化物に含まれる全ケイ素原子に対する前記T体のケイ素原子の割合が、50モル%以上である、[1]に記載の硬化物。
[3]前記縮合型シリコーン樹脂硬化物に含まれる全ケイ素原子に対するT3ケイ素原子の割合が、50モル%以上である、[2]に記載の硬化物。
(ここで、T3ケイ素原子とは、T体のケイ素原子のうち、3個の酸素原子の全てが他のケイ素原子と結合しているケイ素原子を意味する。)
[4]前記縮合型シリコーン樹脂硬化物が、式(A1)、式(A1’)、式(A2)または式(A3)で表される構造単位を含む、[1]~[3]のいずれかに記載の硬化物。
Figure JPOXMLDOC01-appb-C000004
(式(A1)、式(A1’)、式(A2)および式(A3)中、
 Rは、炭素数1~10のアルキル基または炭素数6~10のアリール基を表す。
 Rは、炭素数1~4のアルコキシ基または水酸基を表す。
 複数あるRおよびRは、それぞれ同一であっても異なっていてもよい。)
[5]前記Rがメチル基であり、
 前記Rが炭素数1~3のアルコキシ基または水酸基であり、複数あるRは同一であっても異なっていてもよい、[4]に記載の硬化物。
[6]前記縮合型シリコーン樹脂硬化物中にフィラーが分散している、[1]~[5]のいずれかに記載の硬化物。
[7]前記フィラーが、波長変換材料である、[6]に記載の硬化物。
[8]前記波長変換材料が、蛍光体である、[7]に記載の硬化物。
[9][7]または[8]に記載の硬化物を形成材料とする波長変換シート。
[10]光を射出する光源と、
 前記光源から射出される光が入射する位置に配置された[9]に記載の波長変換シートと、を有する発光装置。
[11][1]~[8]のいずれかに記載の硬化物を形成材料とする封止用部材。
[12]基材と、
 前記基材に配置された半導体発光素子と、
 前記半導体発光素子の少なくとも一部を封止する封止用部材と、を有し、
 前記封止用部材が、[11]に記載の封止用部材である、半導体発光装置。
[13]前記半導体発光素子の発光波長が400nm以下である、[12]に記載の半導体発光装置。
[1] A cured product that includes a cured cured silicone resin and satisfies the following (1) and (2).

(1) In the solid 29 Si-nuclear magnetic resonance spectrum of the cured silicone resin cured product, there is a peak attributed to the silicon atom of the T form.
(Here, the silicon atom of the T form means a silicon atom bonded to three oxygen atoms.)

(2) The following non-uniform domain size is 50 mm or more.
(Here, non-uniform domain size means
The measurement value of small-angle X-ray scattering of a sample obtained by impregnating tetrahydrofuran of the condensed silicone resin cured product with swelling,
A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering,
It is a value obtained by fitting with the following formula (A). )
Figure JPOXMLDOC01-appb-M000003
(Where ξ represents the mesh size, Ξ represents the heterogeneous domain size, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.)

[2] The cured product according to [1], wherein the ratio of silicon atoms of the T-form to the total silicon atoms contained in the condensed silicone resin cured product is 50 mol% or more.
[3] The cured product according to [2], wherein a ratio of T3 silicon atoms to all silicon atoms contained in the condensed silicone resin cured product is 50 mol% or more.
(Here, the T3 silicon atom means a silicon atom in which all three oxygen atoms are bonded to other silicon atoms in the T-body silicon atoms.)
[4] Any of [1] to [3], wherein the cured silicone resin cured product includes a structural unit represented by formula (A1), formula (A1 ′), formula (A2), or formula (A3) Cured product according to crab.
Figure JPOXMLDOC01-appb-C000004
(In Formula (A1), Formula (A1 ′), Formula (A2) and Formula (A3),
R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
R 2 represents an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group.
A plurality of R 1 and R 2 may be the same or different. )
[5] R 1 is a methyl group,
The cured product according to [4], wherein R 2 is an alkoxy group having 1 to 3 carbon atoms or a hydroxyl group, and a plurality of R 2 may be the same or different.
[6] The cured product according to any one of [1] to [5], wherein a filler is dispersed in the condensed silicone resin cured product.
[7] The cured product according to [6], wherein the filler is a wavelength conversion material.
[8] The cured product according to [7], wherein the wavelength conversion material is a phosphor.
[9] A wavelength conversion sheet using the cured product according to [7] or [8] as a forming material.
[10] a light source that emits light;
A wavelength conversion sheet according to [9], which is disposed at a position where light emitted from the light source is incident.
[11] A sealing member comprising the cured product according to any one of [1] to [8] as a forming material.
[12] a substrate;
A semiconductor light emitting device disposed on the substrate;
A sealing member for sealing at least a part of the semiconductor light emitting element,
A semiconductor light-emitting device, wherein the sealing member is the sealing member according to [11].
[13] The semiconductor light emitting device according to [12], wherein an emission wavelength of the semiconductor light emitting element is 400 nm or less.
 本発明によれば、高硬度と高いクラック耐性と高い耐熱性とを兼ね備えた硬化物を提供することができる。また、当該硬化物を形成材料とする波長変換シート、発光装置、封止用部材および半導体発光装置を提供することができる。 According to the present invention, a cured product having both high hardness, high crack resistance and high heat resistance can be provided. Moreover, the wavelength conversion sheet which uses the said hardened | cured material as a forming material, a light-emitting device, the member for sealing, and a semiconductor light-emitting device can be provided.
本実施形態の硬化物の膨潤サンプルの状態を示す模式図である。It is a schematic diagram which shows the state of the swelling sample of the hardened | cured material of this embodiment. 本実施形態における波長変換シートを示す模式図である。It is a schematic diagram which shows the wavelength conversion sheet in this embodiment. 本実施形態の発光装置を示す模式図である。It is a schematic diagram which shows the light-emitting device of this embodiment. 本実施形態の発光装置を示す模式図である。It is a schematic diagram which shows the light-emitting device of this embodiment. 本実施形態の発光装置を示す模式図である。It is a schematic diagram which shows the light-emitting device of this embodiment. 本実施形態の半導体発光装置の断面図である。It is sectional drawing of the semiconductor light-emitting device of this embodiment. 冷凍粉砕機にて粉砕後のシリコーン硬化物のSEM写真である。It is a SEM photograph of the silicone hardened material after crushing with a freeze crusher. 実施例および比較例の硬化物について作成したSAXSプロファイルである。It is the SAXS profile created about the hardened | cured material of an Example and a comparative example.
 以下、本発明の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described.
 シリコーン樹脂に含まれる構造単位は、繰り返し単位としてシリコーン樹脂に含まれていることが好ましい。 The structural unit contained in the silicone resin is preferably contained in the silicone resin as a repeating unit.
<硬化物>
 本発明の硬化物は、縮合型シリコーン樹脂硬化物を含み、下記(1)および(2)を満たす。

(1)前記縮合型シリコーン樹脂硬化物の固体29Si-核磁気共鳴スペクトルにおいて、T体のケイ素原子に帰属されるピークが存在する。
(ここで、T体のケイ素原子とは、3個の酸素原子と結合しているケイ素原子を意味する。)

(2)下記の不均一ドメインサイズが50Å以上である。
(ここで、不均一ドメインサイズとは、
 前記縮合型シリコーン樹脂硬化物をテトラヒドロフランに含浸させて膨潤させた試料の小角X線散乱の測定値を、
 小角X線散乱の測定で用いるX線の波数を横軸とし、小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、プロットすることにより得られるグラフを、
 下記式(A)でフィッティングすることにより得られる値である。)
<Hardened product>
The cured product of the present invention includes a condensed silicone resin cured product and satisfies the following (1) and (2).

(1) In the solid 29 Si-nuclear magnetic resonance spectrum of the cured silicone resin cured product, there is a peak attributed to the silicon atom of the T form.
(Here, the silicon atom of the T form means a silicon atom bonded to three oxygen atoms.)

(2) The following non-uniform domain size is 50 mm or more.
(Here, non-uniform domain size means
The measurement value of small-angle X-ray scattering of a sample obtained by impregnating tetrahydrofuran of the condensed silicone resin cured product with swelling,
A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering,
It is a value obtained by fitting with the following formula (A). )
Figure JPOXMLDOC01-appb-M000005
(ここで、ξは網目メッシュサイズを表し、Ξは不均一ドメインサイズを表し、I(q)は散乱強度を表し、qは波数を表し、AおよびBはフィッティング定数を表す。)
Figure JPOXMLDOC01-appb-M000005
(Where ξ represents the mesh size, Ξ represents the heterogeneous domain size, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.)
 以下の説明では、小角X線散乱(small angle X-ray scattering)のことをSAXSと略称することがある。 In the following description, small angle X-ray scattering may be abbreviated as SAXS.
(縮合型シリコーン樹脂硬化物)
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料には、縮合型シリコーン樹脂が用いられる。縮合型シリコーン樹脂は、1種単独で用いてもよいし、2種以上を用いてもよい。
 縮合型シリコーン樹脂とは、ケイ素原子に結合した水酸基と、別のケイ素原子に結合したアルコキシ基または水酸基とを、脱アルコール反応または脱水反応させることにより重縮合する樹脂である。
(Condensed silicone resin cured product)
A condensation type silicone resin is used as a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment. Condensation type silicone resin may be used individually by 1 type, and may use 2 or more types.
The condensation type silicone resin is a resin that undergoes polycondensation by subjecting a hydroxyl group bonded to a silicon atom and an alkoxy group or hydroxyl group bonded to another silicon atom to a dealcoholization reaction or a dehydration reaction.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂は、下記式(A3)で表される構造単位を含む。また、縮合型シリコーン樹脂は、式(A1)で表される構造単位、式(A1’)で表される構造単位および式(A2)で表される構造単位からなる群から選ばれる1種以上の構造単位をさらに含むことが好ましく、式(A1)で表される構造単位、式(A1’)で表される構造単位および式(A2)で表される構造単位の全てをさらに含むことがより好ましい。 The condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment includes a structural unit represented by the following formula (A3). The condensed silicone resin is one or more selected from the group consisting of a structural unit represented by the formula (A1), a structural unit represented by the formula (A1 ′), and a structural unit represented by the formula (A2). The structural unit is preferably further included, and further includes all of the structural unit represented by the formula (A1), the structural unit represented by the formula (A1 ′), and the structural unit represented by the formula (A2). More preferred.
Figure JPOXMLDOC01-appb-C000006
 (式(A1)、式(A1’)、式(A2)および式(A3)中、
 Rは、炭素数1~10のアルキル基または炭素数6~10のアリール基を表す。
 Rは、炭素数1~4のアルコキシ基または水酸基を表す。
 複数あるRおよびRは、それぞれ同一であっても異なっていてもよい。)
Figure JPOXMLDOC01-appb-C000006
(In Formula (A1), Formula (A1 ′), Formula (A2) and Formula (A3),
R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
R 2 represents an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group.
A plurality of R 1 and R 2 may be the same or different. )
 本明細書では、3個の酸素原子と結合しているケイ素原子を含む構造単位を「T体」という。
 また、当該3個の酸素原子の全てが他のケイ素原子と結合しているケイ素原子を含む構造単位を「T3体」という。
 また、当該3個の酸素原子のうち2個の酸素原子が他のケイ素原子と結合しているケイ素原子を含む構造単位を「T2体」という。
 また、当該3個の酸素原子のうち1個の酸素原子が他のケイ素原子と結合しているケイ素原子を含む構造単位を「T1体」という。
 つまり、「T体」は、「T1体」、「T2体」および「T3体」を意味する。
In this specification, a structural unit including a silicon atom bonded to three oxygen atoms is referred to as a “T body”.
A structural unit containing a silicon atom in which all of the three oxygen atoms are bonded to another silicon atom is referred to as a “T3 body”.
A structural unit containing a silicon atom in which two of the three oxygen atoms are bonded to another silicon atom is referred to as a “T2 body”.
In addition, a structural unit including a silicon atom in which one of the three oxygen atoms is bonded to another silicon atom is referred to as a “T1 body”.
That is, “T body” means “T1 body”, “T2 body”, and “T3 body”.
 本明細書では、2個の酸素原子と結合しているケイ素原子を含む構造単位を「D体」という。1個の酸素原子と結合しているケイ素原子を含む構造単位を「M体」という。 In this specification, a structural unit containing a silicon atom bonded to two oxygen atoms is referred to as “D-form”. A structural unit containing a silicon atom bonded to one oxygen atom is referred to as an “M body”.
 式(A3)で表される構造単位は、他のケイ素原子と結合した3個の酸素原子およびRと結合しているケイ素原子を含んでいる。Rは炭素数1~10のアルキル基または炭素数6~10のアリール基であるため、式(A3)で表される構造単位はT3体である。 The structural unit represented by the formula (A3) includes three oxygen atoms bonded to other silicon atoms and a silicon atom bonded to R 1 . Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, the structural unit represented by the formula (A3) is a T3 isomer.
 式(A2)で表される構造単位は、他のケイ素原子と結合した2個の酸素原子2個、RおよびRと結合しているケイ素原子を含んでいる。Rは炭素数1~4のアルコキシ基または水酸基であるため、式(A2)で表される構造単位はT2体である。 The structural unit represented by the formula (A2) includes two oxygen atoms bonded to other silicon atoms, and a silicon atom bonded to R 1 and R 2 . Since R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structural unit represented by the formula (A2) is a T2 isomer.
 式(A1)で表される構造単位は、他のケイ素原子と結合した1個の酸素原子、Rおよび2個のRと結合しているケイ素原子を含んでいる。Rは炭素数1~10のアルキル基または炭素数6~10のアリール基であり、Rは炭素数1~4のアルコキシ基または水酸基であるため、式(A1)で表される構造単位はT1体である。 The structural unit represented by the formula (A1) includes one oxygen atom bonded to another silicon atom, a silicon atom bonded to R 1 and two R 2 atoms. Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structural unit represented by the formula (A1) Is T1 body.
 式(A1’)で表される構造単位は、Rおよび2個のRと結合しているケイ素原子を含み、当該ケイ素原子は、他の構造単位中のケイ素原子と結合している酸素原子と結合している。Rは炭素数1~10のアルキル基または炭素数6~10のアリール基であり、Rは炭素数1~4のアルコキシ基または水酸基であるため、式(A1’)で表される構造単位はT1体である。 The structural unit represented by the formula (A1 ′) includes a silicon atom bonded to R 1 and two R 2, and the silicon atom is bonded to a silicon atom in another structural unit. It is bonded to an atom. Since R 1 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, and R 2 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, the structure represented by the formula (A1 ′) The unit is T1 body.
 式(A1)で表される構造単位および式(A1’)で表される構造単位は、縮合型シリコーン樹脂に含まれるオルガノポリシロキサン鎖の末端を構成している。また、式(A3)で表される構造単位は、縮合型シリコーン樹脂に含まれるオルガノポリシロキサン鎖の分岐鎖構造を構成している。すなわち、式(A3)で表される構造単位は、縮合型シリコーン樹脂における網目構造や環構造の一部を形成している。 The structural unit represented by the formula (A1) and the structural unit represented by the formula (A1 ′) constitute the end of the organopolysiloxane chain contained in the condensed silicone resin. The structural unit represented by the formula (A3) constitutes a branched structure of an organopolysiloxane chain contained in the condensation type silicone resin. That is, the structural unit represented by the formula (A3) forms a part of a network structure or a ring structure in the condensed silicone resin.
 本明細書では、T3体に含まれるケイ素原子のことを「T3ケイ素原子」と称する。また、T2体に含まれるケイ素原子のことを「T2ケイ素原子」と称する。また、T1体に含まれるケイ素原子のことを「T1ケイ素原子」と称する。 In this specification, the silicon atom contained in the T3 body is referred to as “T3 silicon atom”. A silicon atom contained in the T2 body is referred to as “T2 silicon atom”. The silicon atom contained in the T1 body is referred to as “T1 silicon atom”.
 T1体、T2体およびT3体の合計含有量は、縮合型シリコーン樹脂の全構造単位の合計含有量に対して、50モル%以上であることが好ましい。換言すると、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の合計含有量は、縮合型シリコーン樹脂の全ケイ素原子の合計含有量に対して、50モル%以上であることが好ましい。さらに、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の合計含有量は、縮合型シリコーン樹脂の全ケイ素原子の合計含有量に対して、60モル%以上であることがより好ましく、70モル%以上であることがさらに好ましく、80モル%以上であることがよりさらに好ましく、90モル%以上であることが殊更に好ましい。 The total content of T1 body, T2 body and T3 body is preferably 50 mol% or more based on the total content of all structural units of the condensation type silicone resin. In other words, the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms in the condensed silicone resin. Furthermore, the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is more preferably 60 mol% or more, and 70 mol% or more based on the total content of all silicon atoms in the condensation type silicone resin. More preferably, it is 80 mol% or more, still more preferably 90 mol% or more.
 D体の含有量は、縮合型シリコーン樹脂の全構造単位の合計含有量に対して、30モル%以下であることが好ましく、20モル%以下であることがより好ましく、10モル%以下であることがさらに好ましく、5モル%以下であることがよりさらに好ましく、4モル%以下であることが殊更に好ましい。 The content of D-form is preferably 30 mol% or less, more preferably 20 mol% or less, and more preferably 10 mol% or less with respect to the total content of all structural units of the condensation-type silicone resin. Is more preferably 5 mol% or less, and still more preferably 4 mol% or less.
 T1体、T2体およびT3体の合計含有量は、固体29Si-NMR測定において求められる全ケイ素原子のシグナルの合計面積で、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子として帰属されるシグナルの合計面積を除することで求めることができる。 The total content of T1, T2, and T3 is the total area of signals of all silicon atoms determined by solid-state 29 Si-NMR measurement, and is the signal attributed as T1, T2, and T3 silicon atoms. It can be obtained by dividing the total area.
 T3体の含有量は、縮合型シリコーン樹脂の全構造単位の合計含有量に対して、50モル%以上であることが好ましい。換言すると、T3ケイ素原子の含有量は、縮合型シリコーン樹脂の全ケイ素原子の合計含有量に対して、50モル%以上であることが好ましい。さらに、T3ケイ素原子の含有量は、縮合型シリコーン樹脂の全ケイ素原子の合計含有量に対して、60モル%以上であることがより好ましく、70モル%以上であることがさらに好ましい。 The content of the T3 body is preferably 50 mol% or more with respect to the total content of all structural units of the condensation type silicone resin. In other words, the content of T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms in the condensation type silicone resin. Further, the content of T3 silicon atoms is more preferably 60 mol% or more, and further preferably 70 mol% or more, based on the total content of all silicon atoms in the condensation type silicone resin.
 T3ケイ素原子の含有量は、固体29Si-NMR測定において求められる全ケイ素原子のシグナルの合計面積で、T3ケイ素原子として帰属されるシグナルの面積を除することで求めることができる。なお、T3ケイ素原子以外のケイ素原子の含有量についても、同様に求めることができる。 The content of T3 silicon atoms can be obtained by dividing the area of signals attributed as T3 silicon atoms by the total area of signals of all silicon atoms obtained in solid 29 Si-NMR measurement. The content of silicon atoms other than T3 silicon atoms can be determined in the same manner.
 Rで表される炭素数1~10のアルキル基は、直鎖状のアルキル基であってもよく、分岐鎖状のアルキル基であってもよく、環状構造を有するアルキル基であってもよい。これらの中でも、直鎖状または分岐鎖状のアルキル基が好ましく、直鎖状のアルキル基がより好ましい。 The alkyl group having 1 to 10 carbon atoms represented by R 1 may be a linear alkyl group, a branched alkyl group, or an alkyl group having a cyclic structure. Good. Among these, a linear or branched alkyl group is preferable, and a linear alkyl group is more preferable.
 Rで表される炭素数1~10のアルキル基は、当該アルキル基を構成する1個以上の水素原子が、他の官能基で置換されていてもよい。アルキル基の置換基としては、例えば、フェニル基、ナフチル基等の炭素数6~10のアリール基が挙げられ、フェニル基が好ましい。 In the alkyl group having 1 to 10 carbon atoms represented by R 1 , one or more hydrogen atoms constituting the alkyl group may be substituted with another functional group. Examples of the substituent of the alkyl group include aryl groups having 6 to 10 carbon atoms such as a phenyl group and a naphthyl group, and a phenyl group is preferable.
 Rで表される炭素数1~10のアルキル基としては、例えば、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、n-ペンチル基、ネオペンチル基、ヘキシル基、オクチル基、ノニル基、デシル基等の無置換のアルキル基、フェニルメチル基、フェニルエチル基、フェニルプロピル基等のアラルキル基が挙げられる。これらの中でも、メチル基、エチル基、n-プロピル基またはn-ブチル基が好ましく、メチル基、エチル基またはイソプロピル基がより好ましく、メチル基がさらに好ましい。 Examples of the alkyl group having 1 to 10 carbon atoms represented by R 1 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, and an n-pentyl group. And an unsubstituted alkyl group such as a neopentyl group, a hexyl group, an octyl group, a nonyl group and a decyl group, and an aralkyl group such as a phenylmethyl group, a phenylethyl group and a phenylpropyl group. Among these, a methyl group, an ethyl group, an n-propyl group or an n-butyl group is preferable, a methyl group, an ethyl group or an isopropyl group is more preferable, and a methyl group is more preferable.
 Rで表される炭素数6~10のアリール基は、当該アリール基を構成する1個以上の水素原子が、他の官能基で置換されていてもよい。アリール基の置換基としては、例えば、メチル基、エチル基、プロピル基、ブチル基等の炭素数1~10のアルキル基が挙げられる。 In the aryl group having 6 to 10 carbon atoms represented by R 1 , one or more hydrogen atoms constituting the aryl group may be substituted with another functional group. Examples of the substituent for the aryl group include alkyl groups having 1 to 10 carbon atoms such as a methyl group, an ethyl group, a propyl group, and a butyl group.
 Rで表される炭素数6~10のアリール基としては、例えば、フェニル基、ナフチル基等の無置換のアリール基、メチルフェニル基、エチルフェニル基、プロピルフェニル基等のアルキルアリール基が挙げられる。これらの中でも、フェニル基が好ましい。 Examples of the aryl group having 6 to 10 carbon atoms represented by R 1 include unsubstituted aryl groups such as a phenyl group and a naphthyl group, and alkylaryl groups such as a methylphenyl group, an ethylphenyl group, and a propylphenyl group. It is done. Among these, a phenyl group is preferable.
 Rとしては、アルキル基が好ましく、メチル基、エチル基またはイソプロピル基がより好ましく、メチル基が更に好ましい。 R 1 is preferably an alkyl group, more preferably a methyl group, an ethyl group or an isopropyl group, and even more preferably a methyl group.
 Rで表される炭素数1~4のアルコキシ基は、直鎖状のアルコキシ基であってもよく、分岐鎖状のアルコキシ基であってもよく、環状構造を有するアルコキシ基であってもよい。これらの中でも、直鎖状または分岐鎖状のアルコキシ基が好ましく、直鎖状のアルコキシ基がより好ましい。 The C 1-4 alkoxy group represented by R 2 may be a linear alkoxy group, a branched alkoxy group, or an alkoxy group having a cyclic structure. Good. Among these, a linear or branched alkoxy group is preferable, and a linear alkoxy group is more preferable.
 Rで表される炭素数1~4のアルコキシ基としては、例えば、メトキシ基、エトキシ基、n-プロポキシ基、イソプロポキシ基、n-ブトキシ基、イソブトキシ基またはtert-ブトキシ基が好ましく、メトキシ基、エトキシ基またはイソプロポキシ基がより好ましい。 The alkoxy group having 1 to 4 carbon atoms represented by R 2 is, for example, preferably a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group or a tert-butoxy group. A group, an ethoxy group or an isopropoxy group is more preferable.
 Rとしては、メトキシ基、エトキシ基、イソプロポキシ基または水酸基が好ましい。 R 2 is preferably a methoxy group, an ethoxy group, an isopropoxy group or a hydroxyl group.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂は、下記式(C1)、式(C1’)、式(C2)、式(C3)または式(C4)で表される構造単位をさらに含んでいてもよい。 The condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment is represented by the following formula (C1), formula (C1 ′), formula (C2), formula (C3), or formula (C4). ) May be further included.
Figure JPOXMLDOC01-appb-C000007
(式(C1)、式(C1’)、式(C2)、式(C3)および式(C4)中、Rは、炭素数1~4のアルコキシ基または水酸基を表す。複数あるRは、同一であっても異なっていてもよい。)
Figure JPOXMLDOC01-appb-C000007
(Formula (C1), formula (C1 '), wherein (C2), formula (C3) and formula (C4), R 7 is, R 7 in. A plurality of an alkoxy group or hydroxyl group having 1 to 4 carbon atoms , May be the same or different.)
 本明細書では、4個の酸素原子と結合しているケイ素原子を含む構造単位を「Q体」という。
 また、当該4個の酸素原子のうち1個の酸素原子が他のケイ素原子と結合しているケイ素原子を含む構造単位を「Q1体」という。式(C1)で表される構造単位および式(C1’)で表される構造単位はQ1体である。
 また、当該4個の酸素原子のうち2個の酸素原子が他のケイ素原子と結合しているケイ素原子を含む構造単位を「Q2体」という。式(C2)で表される構造単位はQ2体である。
 また、当該4個の酸素原子のうち3個の酸素原子が他のケイ素原子と結合しているケイ素原子を含む構造単位を「Q3体」という。式(C3)で表される構造単位はQ3体である。
 また、当該4個の酸素原子の全てが他のケイ素原子と結合しているケイ素原子を含む構造単位を「Q4体」という。式(C4)に含まれるケイ素原子はQ4体である。
In this specification, a structural unit including a silicon atom bonded to four oxygen atoms is referred to as a “Q body”.
A structural unit containing a silicon atom in which one of the four oxygen atoms is bonded to another silicon atom is referred to as “Q1 body”. The structural unit represented by the formula (C1) and the structural unit represented by the formula (C1 ′) are Q1 isomers.
Further, a structural unit containing a silicon atom in which two of the four oxygen atoms are bonded to another silicon atom is referred to as “Q2 body”. The structural unit represented by the formula (C2) is Q2 isomer.
In addition, a structural unit including a silicon atom in which three oxygen atoms among the four oxygen atoms are bonded to other silicon atoms is referred to as “Q3 body”. The structural unit represented by the formula (C3) is Q3 body.
A structural unit containing a silicon atom in which all of the four oxygen atoms are bonded to another silicon atom is referred to as “Q4 body”. The silicon atom contained in Formula (C4) is Q4 body.
 つまり、Q体は、Q1体、Q2体、Q3体およびQ4体を意味する。 That is, Q body means Q1, Q2, Q3 and Q4 bodies.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の比重は、1.20~1.35であることが好ましい。縮合型シリコーン樹脂硬化物の比重は、D体、T体およびQ体の含有比率を制御することで適宜調整可能である。 The specific gravity of the condensed silicone resin cured product contained in the cured product of this embodiment is preferably 1.20 to 1.35. The specific gravity of the condensed silicone resin cured product can be appropriately adjusted by controlling the content ratio of the D-form, T-form and Q-form.
[不均一ドメインサイズ]
 発明者らが鋭意検討した結果、縮合型シリコーン樹脂硬化物について、小角X線散乱の測定を行い、小角X線散乱の測定値から算出される特定のパラメータが、硬化物のクラック耐性および硬度(すなわち、硬化物の力学物性)と相関することを見出した。すなわち、特定のパラメータが所定の要件を満たす硬化物は、硬度およびクラック耐性に優れることを見出した。また、特定のパラメータが所定の要件を満たす硬化物は、高温に曝された後でも、強度および透明性を保持すること(すなわち、耐熱性に優れること)を見出した。
[Non-uniform domain size]
As a result of intensive studies by the inventors, the cured silicone resin cured product was measured for small-angle X-ray scattering, and the specific parameters calculated from the measured values of the small-angle X-ray scattering determined the crack resistance and hardness ( That is, it was found to correlate with the mechanical properties of the cured product. That is, it has been found that a cured product in which a specific parameter satisfies a predetermined requirement is excellent in hardness and crack resistance. Moreover, the hardened | cured material which a specific parameter satisfy | fills a predetermined requirement discovered that intensity | strength and transparency were hold | maintained (that is, it was excellent in heat resistance), even after being exposed to high temperature.
 具体的には、パラメータとして下記の不均一ドメインサイズが50Å以上である硬化物は、硬度、クラック耐性および耐熱性に優れる。 Specifically, a cured product having the following non-uniform domain size of 50 mm or more as a parameter is excellent in hardness, crack resistance and heat resistance.
 不均一ドメインサイズは、縮合型シリコーン樹脂硬化物をテトラヒドロフランに含浸させて膨潤させた試料の小角X線散乱の測定値を、
 小角X線散乱の測定で用いるX線の波数を横軸とし、小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、プロットすることにより得られるグラフを、
 下記式(A)でフィッティングすることにより得られる値である。
The heterogeneous domain size is a measured value of small-angle X-ray scattering of a sample in which a condensed silicone resin cured product is impregnated with tetrahydrofuran and swollen.
A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering,
It is a value obtained by fitting with the following formula (A).
Figure JPOXMLDOC01-appb-M000008
(ここで、ξは網目メッシュサイズを表し、Ξは不均一ドメインサイズを表し、I(q)は散乱強度を表し、qは波数を表し、AおよびBはフィッティング定数を表す。)
Figure JPOXMLDOC01-appb-M000008
(Where ξ represents the mesh size, Ξ represents the heterogeneous domain size, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.)
 ξで表される網目メッシュサイズは、本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物をテトラヒドロフランに含浸させて膨張させた試料において、架橋点であるT3ケイ素原子間の距離に関する指標値である。 The mesh mesh size represented by ξ is an index value related to the distance between T3 silicon atoms, which are crosslinking points, in a sample obtained by impregnating and expanding a condensed silicone resin cured product contained in the cured product of this embodiment with tetrahydrofuran. It is.
 AおよびBで表されるフィッティング定数は、式(A)でフィッティングする際に用いる任意の定数である。 The fitting constants represented by A and B are arbitrary constants used when fitting with the formula (A).
 式(A)は、Squaredローレンチアン関数およびオルンシュタイン・ゼルニケ関数によりカーブフィッティングを行うことを意味する。フィッティングパラメータについては、最小二乗法で求める。 Equation (A) means that curve fitting is performed using a Squared Laurentian function and an Ornstein Zernike function. The fitting parameter is obtained by the least square method.
 フィッティングの範囲は、q=0.022Å-1~0.13Å-1の範囲で行う。
 フィッティングの初期値は、1Å<ξ<50Å、1Å<Ξ<250Åとする。
The fitting range is q = 0.022Å −1 to 0.13Å −1 .
The initial value of the fitting is 1Å <ξ <50Å and 1Å <Ξ <250Å.
 小角X線散乱の測定は、二次元検出器搭載の小角X線散乱装置を用いて行うことができる。このような装置としては、例えば、NanoSTAR(装置名、ブルカー・エイエックスエス株式会社製)が挙げられる。 Measurement of small-angle X-ray scattering can be performed using a small-angle X-ray scattering device equipped with a two-dimensional detector. An example of such a device is NanoSTAR (device name, manufactured by Bruker AXS Co., Ltd.).
 まず、冷凍粉砕機を用いて縮合型シリコーン樹脂硬化物を粉砕する。冷凍粉砕機としては、例えば、日本興業株式会社製のJFC-300が挙げられる。シリコーン硬化物を、平均粒径が100μm以下となるまで、粉砕する。 First, the condensed silicone resin cured product is pulverized using a freeze pulverizer. Examples of the freeze pulverizer include JFC-300 manufactured by Nippon Kogyo Co., Ltd. The silicone cured product is pulverized until the average particle size becomes 100 μm or less.
 次に、得られた粉砕物10質量部に対して、テトラヒドロフラン90質量部を加え、24時間静置する。このようにして得られた膨潤サンプルを石英セルに投入し、小角X線解析を行う。 Next, 90 parts by mass of tetrahydrofuran is added to 10 parts by mass of the obtained pulverized product, and left to stand for 24 hours. The swollen sample thus obtained is put into a quartz cell and small angle X-ray analysis is performed.
 X線は、例えば、Cuターゲットの回転対陰極型のX線発生器を用い、出力50kV、100mAで発生させる。そして、発生させたX線を、膨潤サンプル(試料)に照射する。 X-rays are generated at an output of 50 kV and 100 mA using, for example, a rotating anti-cathode X-ray generator of a Cu target. Then, the generated X-ray is irradiated to the swollen sample (specimen).
 X線は、例えば、クロスカップルド・ゲーベルミラーと3つのピンホールスリット(スリットの孔径はX線発生器側から500μmφ、150μmφ、500μmφ)からなるX線の光学系を通って、膨潤サンプルに照射される。そして、膨潤サンプルで散乱されたX線は、二次元検出器(2次元Multi Wire検出器、Hi-STAR)を用いて検出される。 X-rays are irradiated to the swollen sample through an X-ray optical system consisting of, for example, a cross-coupled gobel mirror and three pinhole slits (the diameters of the slits are 500 μmφ, 150 μmφ and 500 μmφ from the X-ray generator side). Is done. The X-rays scattered by the swollen sample are detected using a two-dimensional detector (two-dimensional multi wire detector, Hi-STAR).
 膨潤サンプルから検知器までの長さは、例えば、106cmとすることができ、ダイレクトビームストッパーの大きさは、例えば、2mmφとすることができる。装置内の真空度は、例えば、40Pa以下である。 The length from the swollen sample to the detector can be, for example, 106 cm, and the size of the direct beam stopper can be, for example, 2 mmφ. The degree of vacuum in the apparatus is, for example, 40 Pa or less.
 散乱角2θとダイレクトビーム位置の校正は、例えば、ベヘン酸銀の1次(2θ=1.513°)と2次(2θ=3.027°)のそれぞれのピークを用いて行う。この場合、測定可能な散乱角2θの範囲は、0.08~3°である。 The calibration of the scattering angle 2θ and the direct beam position is performed using, for example, the primary (2θ = 1.513 °) and secondary (2θ = 3.027 °) peaks of silver behenate. In this case, the range of the scattering angle 2θ that can be measured is 0.08 to 3 °.
 検出により得られる二次元の散乱像を、例えば、ブルカー・エイエックスエス社製の解析ソフト(SAXS Ver.4.1.29)を用いて解析し、小角X線小角散乱スペクトルを得ることができる。得られた小角X線散乱スペクトルは、横軸がX線の波数(単位:Å-1)であり、縦軸が測定散乱強度である。 A two-dimensional scattered image obtained by detection can be analyzed using, for example, analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS, and a small-angle X-ray small-angle scattering spectrum can be obtained. . In the obtained small-angle X-ray scattering spectrum, the horizontal axis is the wave number of X-rays (unit: Å -1 ), and the vertical axis is the measured scattering intensity.
 また、膨潤サンプルを投入していない石英セルを用いたブランク散乱の測定についても、上記と同様に行うことができる。 Also, the measurement of blank scattering using a quartz cell into which no swollen sample has been added can be performed in the same manner as described above.
 それぞれの測定で得られた測定値を用いて、膨潤サンプルの小角X線散乱の測定で用いるX線の波数を横軸とし、膨潤サンプルの小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、膨潤サンプルの小角X線散乱の測定値をプロットしたグラフを作成する。得られたグラフについて、上記式(A)でフィッティングすることにより、不均一ドメインサイズΞが得られる。 Using the measured values obtained in each measurement, the horizontal axis represents the wave number of X-rays used in the measurement of small-angle X-ray scattering of the swollen sample, and blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the swollen sample A graph in which the measured values of small-angle X-ray scattering of the swollen sample are plotted with the scattering intensity obtained by subtracting the ordinate as the vertical axis is created. By fitting the obtained graph with the above formula (A), a non-uniform domain size Ξ is obtained.
 小角X線散乱では、一般的に、粒子の形状や架橋点の疎密に由来した物質中の電子密度のコントラストが散乱プロファイルに反映される。架橋密度の高い領域(例えば、T3ケイ素原子の密集した領域)については、通常の小角X線散乱では架橋点の電子密度差による散乱は得られない。しかし、硬化物を溶媒で膨潤させることにより、硬化物中の網目構造を拡げるとともに、溶媒と硬化物とのコントラストが付くため、硬化物中の架橋点の不均一性に由来した散乱を得ることができる。 In small-angle X-ray scattering, the contrast of electron density in a substance derived from the shape of particles and the density of cross-linking points is generally reflected in the scattering profile. In a region having a high crosslinking density (for example, a region where T3 silicon atoms are dense), scattering due to an electron density difference at a crosslinking point cannot be obtained by ordinary small-angle X-ray scattering. However, when the cured product is swollen with a solvent, the network structure in the cured product is expanded and the contrast between the solvent and the cured product is increased, so that scattering resulting from the non-uniformity of the crosslinking points in the cured product is obtained. Can do.
 発明者らが検討した結果、上述した架橋点の不均一性と、硬化物の力学物性とが相関していることを見出した。硬化物が形成される際、架橋反応が空間的に均一に生じると、架橋点が均一に分布した硬化物が得られる。一方、硬化物が形成される際、分子のゆらぎ等のために架橋反応が空間的に不均一に生じると、架橋点が不均一に分布した硬化物が得られる。発明者ら検討した結果、硬化物が形成される際の架橋反応を制御し、架橋点が所定の基準よりも不均一に分布した硬化物は、硬度およびクラック耐性に優れることを見出した。また、「架橋点の不均一さ」は、上述した不均一ドメインサイズΞによって定量的に評価できることを見出した。 As a result of investigations by the inventors, it has been found that the above-described non-uniformity of the cross-linking points correlates with the mechanical properties of the cured product. When the cured product is formed, if the crosslinking reaction occurs spatially uniformly, a cured product in which crosslinking points are uniformly distributed is obtained. On the other hand, when a cured product is formed, if a crosslinking reaction occurs spatially non-uniformly due to molecular fluctuations or the like, a cured product in which cross-linking points are non-uniformly distributed is obtained. As a result of investigations by the inventors, it has been found that a cured product that controls a crosslinking reaction when a cured product is formed and in which crosslinking points are distributed more unevenly than a predetermined standard is excellent in hardness and crack resistance. Moreover, it discovered that "the nonuniformity of a crosslinking point" can be evaluated quantitatively by the heterogeneous domain size flaw mentioned above.
 図1は、上述した重合の状態を示す模式図であり、縮合型シリコーン樹脂硬化物に含まれるT3ケイ素原子の分布を示している。図1において、色付きの濃淡は、T3ケイ素原子の量を示している。色付きが薄い箇所は、T3ケイ素原子が少ない領域であることを示し、色付きが濃い箇所は、T3ケイ素原子が多い領域であることを示している。 FIG. 1 is a schematic diagram showing the above-described polymerization state, and shows the distribution of T3 silicon atoms contained in the condensed silicone resin cured product. In FIG. 1, the shades of color indicate the amount of T3 silicon atoms. A lightly colored portion indicates that the region has few T3 silicon atoms, and a darkly colored portion indicates that the region has many T3 silicon atoms.
 すなわち、縮合型シリコーン樹脂硬化物をテトラヒドロフランで膨潤させる前(図1(a))は、T3ケイ素原子の疎密が不明確な場合であっても、縮合型シリコーン樹脂硬化物をテトラヒドロフランで膨潤させることにより、T3ケイ素原子が少ない領域(図中、符号Aで示す)と、T3ケイ素原子が多い領域(図中、符号Bで示す)とが混在している「不均一」な状態を強調することができる(図1(b))。 That is, before the condensed silicone resin cured product is swollen with tetrahydrofuran (FIG. 1 (a)), the condensed silicone resin cured product is swollen with tetrahydrofuran even when the density of T3 silicon atoms is unclear. To emphasize the “non-uniform” state in which a region having a small amount of T3 silicon atoms (indicated by symbol A in the figure) and a region having a large amount of T3 silicon atoms (indicated by symbol B in the figure) are mixed. (FIG. 1B).
 小角X線散乱では、領域Aと領域Bとの電子密度のコントラストに基づいて、散乱プロファイルが得られる。上述した不均一ドメインサイズΞは、図1(b)で模式的に示す領域A1と領域A2との間の中心間距離dの平均の距離に対応する。図1(b)においては、領域A1の中心を符号P1で示し、領域A2の中心を符号P2で示している。 In small-angle X-ray scattering, a scattering profile is obtained based on the contrast of the electron density between region A and region B. The non-uniform domain size ド メ イ ン described above corresponds to the average distance of the center-to-center distance d between the region A1 and the region A2 schematically shown in FIG. In FIG. 1B, the center of the area A1 is indicated by reference numeral P1, and the center of the area A2 is indicated by reference numeral P2.
 領域の中心は、各領域の重心位置にあたる。すなわち、領域A1の中心であるP1と領域A2の中心であるP1は、それぞれ領域A1と領域A2の重心に対応する。 The center of the area corresponds to the center of gravity of each area. That is, P1 that is the center of the region A1 and P1 that is the center of the region A2 correspond to the centers of gravity of the region A1 and the region A2, respectively.
 硬化物中にT3ケイ素原子が均一に分布している場合、膨潤サンプル中でもT3ケイ素原子が均一に分布するため、不均一ドメインサイズΞは小さくなる。すなわち、不均一ドメインサイズΞが小さい硬化物では、T3ケイ素原子の分布が均一であることを意味する。硬化物中にT3ケイ素原子が所定の基準よりも不均一に分布している場合、硬化物に応力がかかっても、応力を硬化物全体に分散させることができる。そのため、T3ケイ素原子が所定の基準よりも不均一に分布している硬化物は、高いクラック耐性を備える。発明者らが検討した結果、不均一ドメインサイズΞが50Å以上の硬化物では、高硬度と、高いクラック耐性とを兼ね備えることが明らかとなった。T3ケイ素原子が密である領域で強度を保持し、T3ケイ素原子が疎である領域で応力を緩和するためと考えられる。 When the T3 silicon atoms are uniformly distributed in the cured product, the T3 silicon atoms are uniformly distributed even in the swollen sample, so that the non-uniform domain size is small. That is, it means that the distribution of T3 silicon atoms is uniform in a cured product having a small heterogeneous domain size Ξ. When T3 silicon atoms are distributed more unevenly than the predetermined standard in the cured product, even if stress is applied to the cured product, the stress can be dispersed throughout the cured product. Therefore, a cured product in which T3 silicon atoms are distributed more unevenly than a predetermined standard has high crack resistance. As a result of investigations by the inventors, it has been clarified that a cured product having a non-uniform domain size Ξ of 50 Å or more has both high hardness and high crack resistance. This is because the strength is maintained in the region where the T3 silicon atoms are dense and the stress is relaxed in the region where the T3 silicon atoms are sparse.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物は、不均一ドメインサイズΞが50Å以上600Å以下であることが好ましい。 The cured silicone resin cured product contained in the cured product of this embodiment preferably has a non-uniform domain size of 50 to 600 cm.
 不均一ドメインサイズΞは、60Å以上であることが好ましく、70Å以上であることがより好ましく、80Å以上であることがさらに好ましく、90Å以上であることが特に好ましく、100Å以上であることが殊更に好ましく、110Å以上であることが殊更により好ましく、120Å以上であることが殊更にさらに好ましく、130Å以上であることが殊更に特に好ましい。 The heterogeneous domain size wrinkle is preferably 60 mm or more, more preferably 70 mm or more, further preferably 80 mm or more, particularly preferably 90 mm or more, and particularly preferably 100 mm or more. Preferably, it is 110 mm or more, even more preferably 120 mm or more, even more preferably 130 kg or more.
 また、不均一ドメインサイズΞは、500Å以下であることが好ましく、400Å以下であることがより好ましく、300Å以下であることがさらに好ましく、200Å以下であることが特に好ましく、150Å以下であることが殊更に好ましい。 The heterogeneous domain size wrinkle is preferably 500 mm or less, more preferably 400 mm or less, further preferably 300 mm or less, particularly preferably 200 mm or less, and preferably 150 mm or less. Even more preferred.
 不均一ドメインサイズΞがこの範囲内を満たす硬化物は、高硬度(ショアD硬度で70以上)と、高いクラック耐性とを満たすため、デバイス応用する際に好適である。 A cured product having a non-uniform domain size Ξ within this range satisfies a high hardness (Shore D hardness of 70 or more) and a high crack resistance, and thus is suitable for device application.
 本明細書では、タイプDのデュロメータ(ゴム・プラスチック硬度計)を用いて1mm/秒の下降スピードで測定した硬度を、ショアD硬度とした。 In the present specification, the hardness measured at a descending speed of 1 mm / second using a type D durometer (rubber / plastic hardness meter) is defined as Shore D hardness.
(不均一ドメインサイズΞの制御方法)
 不均一ドメインサイズΞの制御方法について説明する。
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物は、主剤となるシリコーン樹脂(以下、「シリコーン樹脂A」と称する。)と、後述するオリゴマー成分とを配合して得られる縮合型シリコーン樹脂を、加熱硬化させることにより得られる硬化物であることが好ましい。この際、原料であるシリコーン樹脂Aおよびオリゴマー成分の種類、配合比率を調整することや、硬化の際の硬化条件を調整することにより、不均一ドメインサイズΞを制御することができる。硬化の際の硬化条件の調整が、不均一ドメインサイズΞの制御には、より効果的である。
(Control method of non-uniform domain size Ξ)
A method for controlling the non-uniform domain size 説明 will be described.
The condensed silicone resin cured product contained in the cured product of the present embodiment is a condensed silicone obtained by blending a silicone resin as a main ingredient (hereinafter referred to as “silicone resin A”) and an oligomer component described later. It is preferable that it is a hardened | cured material obtained by heat-curing resin. At this time, the heterogeneous domain size wrinkles can be controlled by adjusting the types and blending ratios of the silicone resin A and the oligomer component as raw materials, and adjusting the curing conditions at the time of curing. Adjustment of the curing conditions during curing is more effective for controlling the non-uniform domain size wrinkles.
 シリコーン樹脂Aは、網目構造を形成する架橋点(分岐構造)を多く含む材料である。オリゴマー成分は、T2体、D体構造等の直鎖構造を有しており、シリコーン樹脂Aよりも架橋点の少ない材料である。
 以下、シリコーン樹脂Aとオリゴマー成分について、説明する。
Silicone resin A is a material containing many crosslinking points (branched structures) that form a network structure. The oligomer component has a linear structure such as a T2 body or a D body structure, and is a material having fewer crosslinking points than the silicone resin A.
Hereinafter, the silicone resin A and the oligomer component will be described.
 《シリコーン樹脂A》
 シリコーン樹脂Aは、上記式(A3)で表される構造単位を含む。また、シリコーン樹脂Aは、上記式(A1)で表される構造単位、上記式(A1’)で表される構造単位および上記式(A2)で表される構造単位からなる群から選ばれる1種以上の構造単位をさらに含むことが好ましい。
<< Silicone resin A >>
Silicone resin A includes a structural unit represented by the above formula (A3). The silicone resin A is selected from the group consisting of a structural unit represented by the above formula (A1), a structural unit represented by the above formula (A1 ′), and a structural unit represented by the above formula (A2). It is preferable that a structural unit of more than seeds is further included.
 シリコーン樹脂Aにおいて、T1体、T2体およびT3体の合計含有量は、通常、シリコーン樹脂Aの全構造単位の合計含有量に対して、70モル%以上である。
 シリコーン樹脂Aにおいて、T3体の含有量は、通常、シリコーン樹脂Aの全構造単位の合計含有量に対して、60モル%以上90モル%以下である。
 シリコーン樹脂Aのポリスチレン換算の重量平均分子量は、通常、1500以上8000以下である。
In the silicone resin A, the total content of the T1 body, the T2 body, and the T3 body is usually 70 mol% or more with respect to the total content of all the structural units of the silicone resin A.
In the silicone resin A, the content of the T3 body is usually 60 mol% or more and 90 mol% or less with respect to the total content of all the structural units of the silicone resin A.
The polystyrene-reduced weight average molecular weight of the silicone resin A is usually 1500 or more and 8000 or less.
 シリコーン樹脂Aにおいて、T1体、T2体およびT3体の合計含有量は、シリコーン樹脂Aの全構造単位の合計含有量に対して、80モル%以上であることが好ましく、90モル%以上であることがより好ましく、95モル%以上であることがさらに好ましい。 In the silicone resin A, the total content of the T1, T2 and T3 bodies is preferably 80 mol% or more and 90 mol% or more with respect to the total content of all structural units of the silicone resin A. More preferably, it is more preferably 95 mol% or more.
 シリコーン樹脂Aにおいて、T3体の含有量は、シリコーン樹脂Aの全構造単位の合計含有量に対して、65%以上90%以下であることが好ましく、70%以上85%以下であることがより好ましい。 In the silicone resin A, the content of the T3 body is preferably 65% or more and 90% or less, and more preferably 70% or more and 85% or less with respect to the total content of all the structural units of the silicone resin A. preferable.
 シリコーン樹脂Aのポリスチレン換算の重量平均分子量は、1500以上7000以下であることが好ましく、2000以上5000以下であることがより好ましい。 The weight average molecular weight in terms of polystyrene of the silicone resin A is preferably 1500 or more and 7000 or less, and more preferably 2000 or more and 5000 or less.
 シリコーン樹脂Aとしては、市販のシリコーンレジンを用いることができる。 As the silicone resin A, a commercially available silicone resin can be used.
 シリコーン樹脂Aは、シラノール基(Si-OH)を有することが好ましい。シリコーン樹脂Aにおいて、シラノール基を有するケイ素原子は、シリコーン樹脂Aに含まれる全ケイ素原子に対して、1~30モル%であることが好ましく、5~27モル%であることがより好ましく、10~25モル%であることが更に好ましい。シリコーン樹脂Aにおいて、シラノール基を有するケイ素原子の含有量が上記の範囲内であれば、硬化の進行スピードが適切な範囲内となり、後述するシリコーン樹脂の硬化条件による構造制御と組み合わせることで、硬化物の硬度、強度等の力学物性を効果的に制御することができる。 The silicone resin A preferably has a silanol group (Si—OH). In the silicone resin A, the silicon atom having a silanol group is preferably 1 to 30 mol%, more preferably 5 to 27 mol%, based on all silicon atoms contained in the silicone resin A. More preferably, it is ˜25 mol%. In the silicone resin A, if the content of silicon atoms having a silanol group is within the above range, the curing speed will be within an appropriate range, and it is cured by combining with the structure control by the curing conditions of the silicone resin described later. It is possible to effectively control mechanical properties such as hardness and strength of the object.
 また、シリコーン樹脂Aにおいて、アルコキシ基を有するケイ素原子は、シリコーン樹脂Aに含まれる全ケイ素原子に対して、0モル%超20モル%以下であることが好ましく、0モル%超10モル%以下であることがより好ましく、1モル%以上10モル%以下であることがさらに好ましい。シリコーン樹脂Aにおいて、アルコキシ基を有するケイ素原子の含有量が上記範囲内であれば、シリコーン樹脂を溶媒に溶解させることで得られるシリコーン樹脂組成物の流動性が適切な範囲内となり、当該シリコーン樹脂組成物のハンドリング性が向上する。 Further, in the silicone resin A, the silicon atom having an alkoxy group is preferably more than 0 mol% and not more than 20 mol%, more than 0 mol% and not more than 10 mol% with respect to all silicon atoms contained in the silicone resin A. More preferably, it is 1 mol% or more and 10 mol% or less. In the silicone resin A, if the content of silicon atoms having an alkoxy group is within the above range, the fluidity of the silicone resin composition obtained by dissolving the silicone resin in a solvent is within the appropriate range, and the silicone resin The handling property of the composition is improved.
 シリコーン樹脂Aは、シロキサン結合を生じ得る官能基を有する有機ケイ素化合物を出発原料として合成することができる。ここで、「シロキサン結合を生じ得る官能基」としては、ハロゲン原子、水酸基、アルコキシ基を挙げることができる。上記式(A3)で表される構造単位に対応する有機ケイ素化合物としては、例えば、オルガノトリハロシラン、オルガノトリアルコキシシラン等が挙げられる。シリコーン樹脂Aは、出発原料である有機ケイ素化合物を、各構造単位の存在比率に対応した比率で、塩酸等の酸または水酸化ナトリウム等の塩基の存在下で、加水分解縮合法で反応させることにより合成することができる。出発原料である有機ケイ素化合物を適宜選択することにより、シリコーン樹脂Aに含まれるT3ケイ素原子の存在比率を調整することができる。 The silicone resin A can be synthesized using an organosilicon compound having a functional group capable of generating a siloxane bond as a starting material. Here, examples of the “functional group capable of generating a siloxane bond” include a halogen atom, a hydroxyl group, and an alkoxy group. Examples of the organosilicon compound corresponding to the structural unit represented by the above formula (A3) include organotrihalosilane and organotrialkoxysilane. Silicone resin A is obtained by reacting an organic silicon compound, which is a starting material, with a hydrolysis condensation method in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide at a ratio corresponding to the existing ratio of each structural unit. Can be synthesized. By appropriately selecting an organic silicon compound that is a starting material, the abundance ratio of T3 silicon atoms contained in the silicone resin A can be adjusted.
 縮合型シリコーン樹脂に含まれるシリコーン樹脂Aの含有量は、縮合型シリコーン樹脂に含まれる全シリコーン樹脂の合計含有量に対して、60質量%~100質量%であることが好ましく、70質量%~95質量%であることがより好ましい。 The content of the silicone resin A contained in the condensation type silicone resin is preferably 60% by mass to 100% by mass, preferably 70% by mass to the total content of all silicone resins contained in the condensation type silicone resin. More preferably, it is 95 mass%.
 《オリゴマー成分》
 縮合型シリコーン樹脂が、シリコーン樹脂Aと、シリコーン樹脂AよりもT3体の含有量が少なく、直鎖構造を有するオリゴマーとを含む場合、重合反応の起こりやすい領域と重合反応が起こりにくい領域が生じる。その結果として、得られる硬化物が「適切な不均一さ」を有する。
<Oligomer component>
When the condensation-type silicone resin contains silicone resin A and an oligomer having a linear structure with less content of T3 than silicone resin A, a region where polymerization reaction easily occurs and a region where polymerization reaction hardly occurs are generated. . As a result, the resulting cured product has “appropriate non-uniformity”.
 [オリゴマーB]
 オリゴマー成分としては、例えば、下記式(B1)、式(B1’)、式(B2)または式(B3)で表される構造単位を含むオリゴマーが挙げられる。
[Oligomer B]
Examples of the oligomer component include an oligomer containing a structural unit represented by the following formula (B1), formula (B1 ′), formula (B2), or formula (B3).
Figure JPOXMLDOC01-appb-C000009
(式(B1)、式(B1’)、式(B2)および式(B3)中、
 Rは、炭素数1~10のアルキル基または炭素数6~10のアリール基を表す。
 Rは、炭素数1~10のアルキル基、炭素数6~10のアリール基、炭素数1~4のアルコキシ基または水酸基を表す。
 複数あるRおよびRは、それぞれ同一であっても異なっていてもよい。)
Figure JPOXMLDOC01-appb-C000009
(In Formula (B1), Formula (B1 ′), Formula (B2) and Formula (B3),
R 3 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
R 4 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a hydroxyl group.
A plurality of R 3 and R 4 may be the same or different. )
 式(B1)、式(B1’)、式(B2)および式(B3)で表される構造単位を含むオリゴマーのポリスチレン換算の重量平均分子量は、1000~10000であることが好ましく、2000~8000であることがより好ましく、3000~6000であることがさらに好ましい。 The weight average molecular weight in terms of polystyrene of the oligomer containing the structural unit represented by the formula (B1), formula (B1 ′), formula (B2) and formula (B3) is preferably 1000 to 10,000, and 2000 to 8000. More preferably, it is 3000 to 6000.
 以下の説明においては、式(B1)、式(B1’)、式(B2)および式(B3)で表される構造単位を含み、ポリスチレン換算の重量平均分子量が1000~10000であるオリゴマー成分を、「オリゴマーB」と称する。 In the following description, an oligomer component having a structural unit represented by formula (B1), formula (B1 ′), formula (B2), and formula (B3) and having a polystyrene-equivalent weight average molecular weight of 1000 to 10,000 is used. , Referred to as “oligomer B”.
 オリゴマーBは、(a)T2体を含むオリゴマーまたは(b)D体を含むオリゴマーが好ましく、(a)および(b)を満たすオリゴマー、すなわち(c)T2体およびD体を含むオリゴマーがより好ましい。 Oligomer B is preferably (a) an oligomer containing T2 form or (b) an oligomer containing D form, more preferably an oligomer satisfying (a) and (b), that is, (c) an oligomer containing T2 form and D form. .
(a)T2体を含むオリゴマー
 (a)T2体を含むオリゴマーとしては、式(B2)で表される構造単位であって、Rが炭素数1~4のアルコキシ基または水酸基である構造単位の含有量、すなわちT2体の含有量が30~60モル%であるものが好ましく、40~55モル%であるものがより好ましい。
(A) Oligomer containing T2 isomer (a) The oligomer containing T2 isomer is a structural unit represented by the formula (B2), wherein R 4 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group In other words, the T2 isomer content is preferably 30 to 60 mol%, more preferably 40 to 55 mol%.
 オリゴマーBが(a)T2体を含むオリゴマーである場合、T2体の含有量が上述の範囲内であれば、縮合型シリコーン樹脂は、シリコーン樹脂AとオリゴマーBとの溶解性を確保しながら、熱硬化時に良好な硬化反応性を示す。 When oligomer B is an oligomer containing (a) T2 form, if the content of T2 form is in the above-mentioned range, the condensation type silicone resin ensures the solubility of silicone resin A and oligomer B, Good curing reactivity is exhibited during heat curing.
(b)D体を含むオリゴマー
 (b)D体を含むオリゴマーとしては、式(B1)、式(B1’)、式(B2)または式(B3)で表される構造単位を含むシリコーン樹脂であって、平均組成式が下記式(I)で表されるシリコーン樹脂が好ましい。

    (RSi(OR(4-n―m)/2   …(I)
(式中、
 Rは、炭素数1~10のアルキル基または炭素数6~10のアリール基を表す。
 Rは、炭素数1~10のアルキル基、炭素数6~10のアリール基または水素原子を表す。
 nは1<n<2を満たす実数を表す。mは0<m<1を満たす実数を表す。)
(B) Oligomer containing D isomer (b) The oligomer containing D isomer is a silicone resin containing a structural unit represented by formula (B1), formula (B1 ′), formula (B2) or formula (B3). A silicone resin having an average composition formula represented by the following formula (I) is preferable.

(R 5 ) n Si (OR 6 ) m O (4-n−m) / 2 (I)
(Where
R 5 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
R 6 represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or a hydrogen atom.
n represents a real number satisfying 1 <n <2. m represents a real number satisfying 0 <m <1. )
 平均組成式が下記式(I)で表されるオリゴマーBは、上述した「T体」および「D体」を含む。 The oligomer B whose average composition formula is represented by the following formula (I) includes the above-mentioned “T-form” and “D-form”.
 式(I)において、Rはメチル基が好ましく、Rはメチル基または水素原子が好ましい。nは1<n≦1.5を満たす実数であり、且つ、mは0.5≦m<1を満たす実数であることが好ましく、nは1.1≦n≦1.4を満たす実数であり、且つ、mは0.55≦m≦0.75を満たす実数であることがより好ましい。式(I)におけるnおよびmがこれらの範囲内であると、オリゴマーBとシリコーン樹脂Aとの相溶性が良好になる。 In the formula (I), R 5 is preferably a methyl group, and R 6 is preferably a methyl group or a hydrogen atom. n is a real number satisfying 1 <n ≦ 1.5, and m is preferably a real number satisfying 0.5 ≦ m <1, and n is a real number satisfying 1.1 ≦ n ≦ 1.4. More preferably, m is a real number that satisfies 0.55 ≦ m ≦ 0.75. When n and m in the formula (I) are within these ranges, the compatibility between the oligomer B and the silicone resin A becomes good.
 オリゴマーBに含まれる全構造単位のうち、式(B1)で表される構造単位および式(B1’)で表される構造単位であって、2つのRのうち一方が炭素数1~10のアルキル基または炭素数6~10のアリール基であり、他方が炭素数1~4のアルコキシ基または水酸基である構造単位は、「D1体」である。 Among all the structural units contained in the oligomer B, a structural unit represented by the formula (B1) and a structural unit represented by the formula (B1 ′), one of the two R 4 has 1 to 10 carbon atoms The structural unit in which the alkyl group or aryl group having 6 to 10 carbon atoms and the other is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group is “D1 form”.
 オリゴマーBに含まれる全構造単位のうち、式(B2)で表される構造単位であって、Rが炭素数1~10のアルキル基または炭素数6~10のアリール基である構造単位は、「D2体」である。 Of all the structural units contained in the oligomer B, the structural unit represented by the formula (B2), wherein R 4 is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, , “D2 body”.
 オリゴマーBが(b)D体を含むオリゴマーである場合、オリゴマーBに含まれる全構造単位のうち、D1体およびD2体の合計含有量は、5~80モル%であることが好ましく、10~70モル%であることがより好ましく、15~50モル%であることがさらに好ましい。 When the oligomer B is an oligomer containing (b) D isomer, the total content of D1 isomer and D2 isomer among all structural units contained in the oligomer B is preferably 5 to 80 mol%. It is more preferably 70 mol%, and further preferably 15 to 50 mol%.
(c)T2体およびD体を含むオリゴマー
 (c)T2体およびD体を含むオリゴマーは、(a)T2体を含むオリゴマーと、(b)D体を含むオリゴマーの双方の要件を満たすものである。
(C) Oligomer containing T2 form and D form (c) The oligomer containing T2 form and D form satisfies the requirements of (a) an oligomer containing T2 form and (b) an oligomer containing D form. is there.
 オリゴマーBに含まれる全構造単位のうち、式(B1)で表される構造単位および式(B1’)で表される構造単位であって、2つのRが炭素数1~4のアルコキシ基または水酸基である構造単位は、T1体である。 Among all structural units contained in the oligomer B, a structural unit represented by the formula (B1) and a structural unit represented by the formula (B1 ′), wherein two R 4 are alkoxy groups having 1 to 4 carbon atoms Or the structural unit which is a hydroxyl group is T1 body.
 オリゴマーBに含まれる全構造単位のうち、式(B2)で表される構造単位であって、Rが炭素数1~4のアルコキシ基または水酸基である構造単位は、T2体である。 Of all the structural units contained in the oligomer B, the structural unit represented by the formula (B2), in which R 4 is an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group, is a T2 isomer.
 オリゴマーBに含まれる全構造単位のうち、式(B3)で表される構造単位は、T3体である。 Of all the structural units contained in the oligomer B, the structural unit represented by the formula (B3) is a T3 body.
 オリゴマーBが(c)T2体およびD体を含むオリゴマーである場合、オリゴマーBに含まれる全構造単位のうち、T1体、T2体およびT3体の合計含有量と、D体の含有量とのモル比(T体:D体)は、60:40~90:10であること好ましい。 When the oligomer B is an oligomer containing (c) the T2 form and the D form, among the total structural units contained in the oligomer B, the total content of the T1 form, the T2 form and the T3 form, and the content of the D form The molar ratio (T-form: D-form) is preferably 60:40 to 90:10.
 オリゴマーBは、シリコーン樹脂を構成する上述した各構造単位に対応し、シロキサン結合を生じ得る官能基を有する有機ケイ素化合物を出発原料として合成することができる。ここで、「シロキサン結合を生じ得る官能基」としては、ハロゲン原子、水酸基、アルコキシ基を挙げることができる。 The oligomer B can be synthesized using an organosilicon compound having a functional group capable of forming a siloxane bond as a starting material corresponding to each of the structural units described above constituting the silicone resin. Here, examples of the “functional group capable of generating a siloxane bond” include a halogen atom, a hydroxyl group, and an alkoxy group.
 上記式(B3)で表される構造単位に対応する有機ケイ素化合物としては、例えば、オルガノトリハロシラン、オルガノトリアルコキシシラン等が挙げられる。上記式(B2)で表される構造単位に対応する有機ケイ素化合物としては、例えば、オルガノジハロシラン、オルガノジアルコキシシラン等が挙げられる。 Examples of the organosilicon compound corresponding to the structural unit represented by the above formula (B3) include organotrihalosilane, organotrialkoxysilane and the like. Examples of the organosilicon compound corresponding to the structural unit represented by the above formula (B2) include organodihalosilane and organodialkoxysilane.
 オリゴマーBは、出発原料である有機ケイ素化合物を、各構造単位の存在比率に対応した比率で、塩酸等の酸または水酸化ナトリウム等の塩基の存在下で、加水分解縮合法で反応させることにより合成することができる。出発原料である有機ケイ素化合物を適宜選択することにより、オリゴマーBに含まれるT体のケイ素原子とD体のケイ素原子の存在比率を調整することができる。 Oligomer B is obtained by reacting an organosilicon compound as a starting material at a ratio corresponding to the abundance ratio of each structural unit in the presence of an acid such as hydrochloric acid or a base such as sodium hydroxide by a hydrolytic condensation method. Can be synthesized. By appropriately selecting the organosilicon compound as the starting material, the abundance ratio of the T-form silicon atom and the D-form silicon atom contained in the oligomer B can be adjusted.
 縮合型シリコーン樹脂に含まれるオリゴマーBの含有量は、縮合型シリコーン樹脂に含まれる全シリコーン樹脂の合計含有量に対して、0.1質量%~20質量%であることが好ましく、0.2質量%~15質量%であることがより好ましく、0.5質量%~10質量%であることがさらに好ましい。 The content of the oligomer B contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the total content of all silicone resins contained in the condensation type silicone resin. The content is more preferably from 15% by mass to 15% by mass, and further preferably from 0.5% by mass to 10% by mass.
 また、縮合型シリコーン樹脂に含まれるオリゴマーBの含有量は、縮合型シリコーン樹脂に含まれるシリコーン樹脂Aの含有量に対して、0.1質量%~20質量%であることが好ましく、1質量%~15質量%であることがより好ましく、5質量%~12質量%であることがさらに好ましい。 The content of the oligomer B contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the content of the silicone resin A contained in the condensation type silicone resin. % To 15% by mass is more preferable, and 5% to 12% by mass is even more preferable.
《オリゴマーC》
 その他のオリゴマー成分としては、例えば、上記式(A1)、上記式(A1’)、上記式(A2)または上記式(A3)で表される構造単位を含むシリコーン樹脂であって、上記式(A1)、上記式(A1’)、上記式(A2)および上記式(A3)で表される構造単位の合計含有量に対する、上記式(A3)で表される構造単位の含有量の割合が0~30モル%であり、ポリスチレン換算の重量平均分子量が1500未満であるシリコーン樹脂が挙げられる。
 以下の説明においては、このようなシリコーン樹脂を、「オリゴマーC」と称する。
<< Oligomer C >>
Other oligomer components include, for example, a silicone resin containing a structural unit represented by the above formula (A1), the above formula (A1 ′), the above formula (A2), or the above formula (A3), The ratio of the content of the structural unit represented by the above formula (A3) to the total content of the structural units represented by A1), the above formula (A1 ′), the above formula (A2) and the above formula (A3) is A silicone resin having a polystyrene-reduced weight average molecular weight of less than 1500 and having a molecular weight of 0 to 30 mol% can be mentioned.
In the following description, such a silicone resin is referred to as “oligomer C”.
 オリゴマーCは、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の合計含有量に対する、T3ケイ素原子の含有量の割合が0~30モル%であり、ポリスチレン換算の重量平均分子量が1500未満であるシリコーン樹脂である。T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の合計含有量に対する、T3ケイ素原子の含有量の割合は、0~25モル%であることが好ましい。 Oligomer C is a silicone in which the ratio of the content of T3 silicon atoms to the total content of T1 silicon atoms, T2 silicon atoms and T3 silicon atoms is 0 to 30 mol%, and the weight average molecular weight in terms of polystyrene is less than 1500 Resin. The ratio of the content of T3 silicon atoms to the total content of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms is preferably 0 to 25 mol%.
 オリゴマーCは、水素原子と結合したケイ素原子(ヒドロシリル基)、およびアルケニル基と結合したケイ素原子を実質的に有しないことが好ましい。オリゴマーCが、アルケニル基と結合したケイ素原子またはヒドロシリル基を有する場合、本実施形態の硬化物の耐熱性が低くなる傾向がある。 The oligomer C preferably has substantially no silicon atom (hydrosilyl group) bonded to a hydrogen atom and silicon atom bonded to an alkenyl group. When the oligomer C has a silicon atom or a hydrosilyl group bonded to an alkenyl group, the heat resistance of the cured product of this embodiment tends to be low.
 オリゴマーCは、下記式(2)で表されるオルガノポリシロキサン構造を有するオリゴマーであることが好ましい。 The oligomer C is preferably an oligomer having an organopolysiloxane structure represented by the following formula (2).
Figure JPOXMLDOC01-appb-C000010
(式(2)中、
 RおよびRは、前記と同じ意味を表す。複数あるRおよびRは、それぞれ同一であっても異なっていてもよい。
 p、q、r、aおよびbは、[a×q]/[(p+b×q)+a×q+(r+q)]=0~0.3となる任意の0以上の数を表す。)
Figure JPOXMLDOC01-appb-C000010
(In the formula (2),
R 1 and R 2 represent the same meaning as described above. A plurality of R 1 and R 2 may be the same or different.
p 2 , q 2 , r 2 , a 2 and b 2 are [a 2 × q 2 ] / [(p 2 + b 2 × q 2 ) + a 2 × q 2 + (r 2 + q 2 )] = 0 to It represents an arbitrary number of 0 or more that becomes 0.3. )
 式(2)で表されるオルガノポリシロキサン構造において、Rがメチル基、エチル基およびフェニル基からなる群より選択される1種以上の基であり、Rがメトキシ基、エトキシ基、イソプロポキシ基および水酸基からなる群より選択される1種以上の基であることが好ましく、Rがメチル基およびエチル基からなる群より選択される1種以上の基であり、Rがメトキシ基、エトキシ基およびイソプロポキシ基からなる群より選択される1種以上の基であることがより好ましい。特に、本実施形態の硬化物の耐熱性の観点から、Rはメチル基であることが好ましい。 In the organopolysiloxane structure represented by the formula (2), R 1 is one or more groups selected from the group consisting of a methyl group, an ethyl group and a phenyl group, and R 2 is a methoxy group, an ethoxy group, an iso group. It is preferably one or more groups selected from the group consisting of a propoxy group and a hydroxyl group, R 1 is one or more groups selected from the group consisting of a methyl group and an ethyl group, and R 2 is a methoxy group And more preferably one or more groups selected from the group consisting of ethoxy groups and isopropoxy groups. In particular, from the viewpoint of the heat resistance of the cured product of the present embodiment, R 1 is preferably a methyl group.
 式(2)で表されるオルガノポリシロキサン構造を有するオリゴマーCの各構造単位の存在比率は、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の存在比率で表すことができる。すあわち、T1ケイ素原子:T2ケイ素原子:T3ケイ素原子=[r+q]:[p+b×q]:[a×q]である。オリゴマーC中の各ケイ素原子の存在比率は、p、q、r、aおよびbの数値を適宜調整することによって調整することができる。例えば、aとqの少なくとも一方が0の場合、オリゴマーC中にはT3ケイ素原子が存在せず、直鎖状または環状の分子のみが含まれる。一方、rとqの両方が0の場合、オリゴマーC中にはT2ケイ素原子のみが存在し、環状の分子のみが含まれる。 The abundance ratio of each structural unit of the oligomer C having an organopolysiloxane structure represented by the formula (2) can be represented by the abundance ratio of T1 silicon atom, T2 silicon atom, and T3 silicon atom. That is, T1 silicon atom: T2 silicon atom: T3 silicon atom = [r 2 + q 2 ]: [p 2 + b 2 × q 2 ]: [a 2 × q 2 ]. The abundance ratio of each silicon atom in the oligomer C can be adjusted by appropriately adjusting the numerical values of p 2 , q 2 , r 2 , a 2 and b 2 . For example, when at least one of a 2 and q 2 is 0, there is no T3 silicon atom in the oligomer C, and only a linear or cyclic molecule is included. On the other hand, when both r 2 and q 2 are 0, only the T2 silicon atom is present in the oligomer C, and only cyclic molecules are included.
 式(2)で表されるオルガノポリシロキサン構造において、T2ケイ素原子の数をxとし、T3ケイ素原子の数をyとし、T1ケイ素原子の数をzとした場合、式(2)で表されるオルガノポリシロキサン構造中のT3ケイ素原子の存在比率は、[y/(x+y+z)]で表される。 If the organopolysiloxane structure represented by formula (2), the number of T2 silicon atoms and x 2, the number of T3 silicon atoms and y 2, and the number of T1 silicon atoms and z 2, formula (2) The abundance ratio of the T3 silicon atom in the organopolysiloxane structure represented by is represented by [y 2 / (x 2 + y 2 + z 2 )].
 [a×q]/[(p+b×q)+a×q+(r+q)]は、式(2)で表されるオルガノポリシロキサン構造中のT3ケイ素原子の存在比率:[y/(x+y+z)]に等しい。すなわち、式(2)中のp、q、r、aおよびbは、T3ケイ素原子の存在比率が0~0.3の範囲内となるように適宜調整される。 [A 2 × q 2 ] / [(p 2 + b 2 × q 2 ) + a 2 × q 2 + (r 2 + q 2 )] is a T3 silicon atom in the organopolysiloxane structure represented by the formula (2) Abundance ratio: equal to [y 2 / (x 2 + y 2 + z 2 )]. That is, p 2 , q 2 , r 2 , a 2 and b 2 in the formula (2) are appropriately adjusted so that the abundance ratio of T3 silicon atoms is in the range of 0 to 0.3.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂が含んでいてもよいオリゴマーCは、式(2)で表されるオルガノポリシロキサン構造を有するシリコーン樹脂であって、T1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の合計含有量に対する、T3ケイ素原子の含有量の割合:[y/(x+y+z)]が0~0.3であり、且つ、ポリスチレン換算の重量平均分子量が1500未満であるオリゴマーが好ましい。T3ケイ素原子の存在比率がこの範囲内であれば、T2ケイ素原子の存在比:[x/(x+y+z)]およびT1ケイ素原子の存在比:[z/(x+y+z)]は特に限定されない。オリゴマーCとしては、[y/(x+y+z)]が0~0.25の範囲内であるものが好ましく、0.05~0.2の範囲内であるものがより好ましい。 The oligomer C that may be contained in the condensed silicone resin that is the raw material of the condensed silicone resin cured product contained in the cured product of the present embodiment is a silicone resin having an organopolysiloxane structure represented by the formula (2). The ratio of the content of T3 silicon atom to the total content of T1 silicon atom, T2 silicon atom and T3 silicon atom: [y 2 / (x 2 + y 2 + z 2 )] is 0 to 0.3 And the oligomer whose weight average molecular weight of polystyrene conversion is less than 1500 is preferable. If the abundance ratio of T3 silicon atoms is within this range, the abundance ratio of T2 silicon atoms: [x 2 / (x 2 + y 2 + z 2 )] and the abundance ratio of T1 silicon atoms: [z 2 / (x 2 + y 2 + z 2 )] is not particularly limited. As the oligomer C, [y 2 / (x 2 + y 2 + z 2 )] is preferably in the range of 0 to 0.25, more preferably in the range of 0.05 to 0.2.
 オリゴマーCは、T3ケイ素原子の存在比率が比較的低いため、分岐鎖構造が少なく、直鎖状の分子や環状の分子を多く含む。オリゴマーCとしては、環状の分子のみを含むものであってもよいが、直鎖状の分子を多く含むものが好ましい。オリゴマーCとしては、例えば、T1ケイ素原子の存在比率:[z/(x+y+z)]が0~0.80の範囲内であるものが好ましく、0.30~0.80の範囲内であるものがより好ましく、0.35~0.75の範囲内であるものが更に好ましく、0.35~0.55の範囲内であるものが特に好ましい。 Oligomer C has a relatively low abundance ratio of T3 silicon atoms, and therefore has a small branched chain structure and contains many linear molecules and cyclic molecules. The oligomer C may include only cyclic molecules, but preferably includes many linear molecules. As the oligomer C, for example, an abundance ratio of T1 silicon atom: [z 2 / (x 2 + y 2 + z 2 )] is preferably in the range of 0 to 0.80, preferably 0.30 to 0.80. Those within the range are more preferred, those within the range of 0.35 to 0.75 are still more preferred, and those within the range of 0.35 to 0.55 are particularly preferred.
 縮合型シリコーン樹脂に含まれるオリゴマーCの含有量は、縮合型シリコーン樹脂に含まれる全シリコーン樹脂の合計含有量に対して、0.1質量%~20質量%であることが好ましく、0.2質量%~15質量%であることがより好ましく、0.5~10質量%であることがさらに好ましい。 The content of the oligomer C contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the total content of all silicone resins contained in the condensation type silicone resin. The content is more preferably from 15% by mass to 15% by mass, and further preferably from 0.5% to 10% by mass.
 また、縮合型シリコーン樹脂に含まれるオリゴマーCの含有量は、縮合型シリコーン樹脂に含まれるシリコーン樹脂Aの含有量に対して、0.1質量%~20質量%であることが好ましく、0.3質量%~10質量%であることがより好ましく、0.5質量%~5質量%であることがさらに好ましい。 Further, the content of the oligomer C contained in the condensation type silicone resin is preferably 0.1% by mass to 20% by mass with respect to the content of the silicone resin A contained in the condensation type silicone resin. It is more preferably 3% by mass to 10% by mass, and further preferably 0.5% by mass to 5% by mass.
 オリゴマーCのポリスチレン換算の重量平均分子量は1500未満である。オリゴマーCのポリスチレン換算の重量平均分子量が大きすぎる場合、本実施形態の硬化物の耐クラック性が不十分な場合がある。GPCで測定されるオリゴマーCのポリスチレン換算の重量平均分子量は、1000未満であってもよい。 The weight average molecular weight of the oligomer C in terms of polystyrene is less than 1500. When the weight average molecular weight of the oligomer C in terms of polystyrene is too large, the crack resistance of the cured product of this embodiment may be insufficient. The polystyrene-converted weight average molecular weight of the oligomer C measured by GPC may be less than 1000.
 オリゴマーCの1分子中のT1ケイ素原子、T2ケイ素原子およびT3ケイ素原子の数は、式(2)で表されるオルガノポリシロキサン構造を有する樹脂が、所望の分子量となるように適宜調整される。一実施形態においては、オリゴマーC1分子中のT1ケイ素原子の数とT2ケイ素原子の数とT3ケイ素原子の数との和は、2以上であることが好ましい。 The number of T1 silicon atoms, T2 silicon atoms, and T3 silicon atoms in one molecule of oligomer C is appropriately adjusted so that the resin having an organopolysiloxane structure represented by formula (2) has a desired molecular weight. . In one embodiment, the sum of the number of T1 silicon atoms, the number of T2 silicon atoms and the number of T3 silicon atoms in the oligomer C1 molecule is preferably 2 or more.
 オリゴマーCは、オリゴマーCを構成する上述した各構造単位に対応し、シロキサン結合を生じ得る官能基を有する有機ケイ素化合物を出発原料として合成することができる。ここで、「シロキサン結合を生じ得る官能基」は、上述したものと同じ意味を表す。上記式(A3)で表される構造単位に対応する有機ケイ素化合物としては、例えば、オルガノトリハロシラン、オルガノトリアルコキシシラン等が挙げられる。オリゴマーCは、このような出発原料である有機ケイ素化合物を各構造単位の存在比率に対応した比率で、加水分解縮合法で反応させることにより合成することができる。 The oligomer C can be synthesized using an organosilicon compound having a functional group capable of generating a siloxane bond corresponding to each structural unit described above constituting the oligomer C as a starting material. Here, the “functional group capable of generating a siloxane bond” has the same meaning as described above. Examples of the organosilicon compound corresponding to the structural unit represented by the above formula (A3) include organotrihalosilane and organotrialkoxysilane. The oligomer C can be synthesized by reacting such an organic silicon compound as a starting material at a ratio corresponding to the abundance ratio of each structural unit by a hydrolytic condensation method.
 オリゴマーCの合成時には、出発原料として、上記式(A1)で表される構造単位に対応する有機ケイ素化合物と、上記式(A1’)で表される構造単位に対応する有機ケイ素化合物とを混合することとなる。これらの有機ケイ素化合物は、有機ケイ素化合物が加水分解縮合反応して重合する際に、重合反応の末端に結合して重合反応を停止させる。 At the time of synthesis of the oligomer C, as a starting material, an organosilicon compound corresponding to the structural unit represented by the above formula (A1) and an organosilicon compound corresponding to the structural unit represented by the above formula (A1 ′) are mixed. Will be. When these organosilicon compounds are polymerized by hydrolytic condensation reaction, these organosilicon compounds are bonded to the terminals of the polymerization reaction to stop the polymerization reaction.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂は、シリコーン樹脂Aと、オリゴマー成分とを含むことが好ましい。オリゴマー成分としては、オリゴマーBまたはオリゴマーCが好ましい。本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂は、シリコーン樹脂Aと、オリゴマーBとを含むことが好ましく、シリコーン樹脂Aと、オリゴマーBと、オリゴマーCとを含むことがより好ましい。 The condensation type silicone resin that is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment preferably includes the silicone resin A and an oligomer component. As the oligomer component, oligomer B or oligomer C is preferable. The condensation-type silicone resin that is a raw material of the condensation-type silicone resin cured product contained in the cured product of the present embodiment preferably includes silicone resin A and oligomer B, and silicone resin A, oligomer B, and oligomer C. And more preferably.
 その他のオリゴマー成分としては、例えば、上記式(A1)で表される構造単位および上記式(A2)で表される構造単位を含むシリコーン樹脂が挙げられる。当該シリコーン樹脂は、D体を含んでいてもよい。 Examples of other oligomer components include a silicone resin containing a structural unit represented by the above formula (A1) and a structural unit represented by the above formula (A2). The silicone resin may contain a D body.
(溶媒)
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂は、T3体の含有量が高い。そのため、ハンドリング性を向上させる目的で、縮合型シリコーン樹脂に溶媒が添加されることがある。縮合型シリコーン樹脂と溶媒とを含む組成物を、「シリコーン樹脂組成物」と称する。
(solvent)
The condensation type silicone resin which is a raw material of the condensation type silicone resin cured product contained in the cured product of the present embodiment has a high content of T3 body. Therefore, a solvent may be added to the condensation-type silicone resin for the purpose of improving handling properties. A composition containing a condensation type silicone resin and a solvent is referred to as a “silicone resin composition”.
 溶媒は、シリコーン樹脂を溶解させることができる限り特に限定されない。溶媒としては、例えば、沸点がそれぞれ異なる2種以上の溶媒(以下、溶媒Pおよび溶媒Qと称する。)を使用することができる。 The solvent is not particularly limited as long as the silicone resin can be dissolved. As the solvent, for example, two or more solvents having different boiling points (hereinafter referred to as solvent P and solvent Q) can be used.
 溶媒Pとしては、沸点が100℃未満の有機溶媒が好ましい。具体的には、アセトン、メチルエチルケトン等のケトン系溶媒;メタノール、エタノール、イソプロピルアルコール、ノルマルプロピルアルコール等のアルコール系溶媒;ヘキサン、シクロヘキサン、ヘプタン、ベンゼン等の炭化水素系溶媒;酢酸メチル、酢酸エチル等の酢酸エステル系溶媒;ジエチルエーテル、テトラヒドロフラン等のエーテル系溶媒が好ましい。 As the solvent P, an organic solvent having a boiling point of less than 100 ° C. is preferable. Specifically, ketone solvents such as acetone and methyl ethyl ketone; alcohol solvents such as methanol, ethanol, isopropyl alcohol, and normal propyl alcohol; hydrocarbon solvents such as hexane, cyclohexane, heptane, and benzene; methyl acetate, ethyl acetate, and the like An acetate solvent such as diethyl ether or tetrahydrofuran is preferred.
 これらの中でも、溶媒Pとしては、メタノール、エタノール、イソプロピルアルコール、ノルマルプロピルアルコール等のアルコール系溶媒がより好ましい。 Among these, as the solvent P, alcohol solvents such as methanol, ethanol, isopropyl alcohol, and normal propyl alcohol are more preferable.
 溶媒Qとしては、沸点が100℃以上の有機溶媒が好ましい。具体的には、グリコールエーテル溶媒、グリコールエステル溶媒が好ましい。 Solvent Q is preferably an organic solvent having a boiling point of 100 ° C. or higher. Specifically, a glycol ether solvent and a glycol ester solvent are preferable.
 グリコールエーテル溶媒の具体例としては、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールモノヘキシルエーテル、エチレングリコールモノエチルヘキシルエーテル、エチレングリコールモノフェニルエーテル、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノブチルエーテル、ジエチレングリコールモノヘキシルエーテル、ジエチレングリコールモノエチルヘキシルエーテル、ジエチレングリコールモノフェニルエーテル、ジエチレングリコールモノベンジルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノイソプロピルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコールモノヘキシルエーテル、プロピレングリコールモノエチルヘキシルエーテル、プロピレングリコールモノフェニルエーテル、プロピレングリコールモノベンジルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノイソプロピルエーテル、ジプロピレングリコールモノブチルエーテル、ジプロピレングリコールモノヘキシルエーテル、ジプロピレングリコールモノエチルヘキシルエーテル、ジプロピレングリコールモノフェニルエーテル、ジプロピレングリコールモノベンジルエーテルが挙げられる。 Specific examples of the glycol ether solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol monoethyl hexyl ether, ethylene glycol monophenyl ether, ethylene Glycol monobenzyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, diethylene glycol monoethyl hexyl ether, diethylene glycol monophenyl ether, di Tylene glycol monobenzyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monoisopropyl ether, propylene glycol monobutyl ether, propylene glycol monohexyl ether, propylene glycol monoethyl hexyl ether, propylene glycol monophenyl ether, propylene glycol monobenzyl ether Ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monoisopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol monohexyl ether, dipropylene glycol monoethylhexyl ether, dipropylene glycol Mono phenyl ether, dipropylene glycol monobenzyl ether.
 グリコールエステル溶媒の具体例としては、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノイソプロピルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、エチレングリコールモノヘキシルエーテルアセテート、エチレングリコールモノエチルヘキシルエーテルアセテート、エチレングリコールモノフェニルエーテルアセテート、エチレングリコールモノベンジルエーテルアセテートが挙げられる。 Specific examples of the glycol ester solvent include ethylene glycol monoethyl ether acetate, ethylene glycol monoisopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monohexyl ether acetate, ethylene glycol monoethyl hexyl ether acetate, ethylene glycol monophenyl ether acetate, And ethylene glycol monobenzyl ether acetate.
 これらの中でも、溶媒Qとしては、エチレングリコールモノブチルエーテル、ジエチレングリコールモノブチルエーテル、ジプロピレングリコールモノメチルエーテル、エチレングリコールモノブチルエーテルアセテートがより好ましい。 Among these, as the solvent Q, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, and ethylene glycol monobutyl ether acetate are more preferable.
(シリコーン樹脂組成物)
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物の原料である縮合型シリコーン樹脂と、溶媒とを混合することで、シリコーン樹脂組成物が得られる。シリコーン樹脂組成物は、後述する硬化触媒、フィラー、その他の成分を含んでいてもよい。
(Silicone resin composition)
A silicone resin composition is obtained by mixing a condensation-type silicone resin, which is a raw material of the condensation-type silicone resin cured product contained in the cured product of this embodiment, and a solvent. The silicone resin composition may contain a curing catalyst, a filler, and other components described below.
 シリコーン樹脂組成物の粘度は、25℃において、通常、100~500000mPa・sであり、300~20000mPa・sであることが好ましく、400~15000mPa・sであることがより好ましく、500~10000mPa・sであることが更に好ましい。シリコーン樹脂組成物の粘度が上記の範囲内であれば、波長変換材料をさらに含む場合に、縮合型シリコーン樹脂と波長変換材料との混合性が良好であり、かつ、波長変換材料の沈降が抑制される。 The viscosity of the silicone resin composition is usually 100 to 500000 mPa · s, preferably 300 to 20000 mPa · s, more preferably 400 to 15000 mPa · s, and more preferably 500 to 10000 mPa · s at 25 ° C. More preferably. If the viscosity of the silicone resin composition is within the above range, when the wavelength conversion material is further included, the mixing property of the condensation type silicone resin and the wavelength conversion material is good, and the precipitation of the wavelength conversion material is suppressed. Is done.
《シリコーン樹脂組成物の製造方法》
 シリコーン樹脂A、オリゴマーBおよびオリゴマーCの混合方法は特に限定されるものではなく、2種類以上の高分子を混合する際に行われる公知の方法のいずれを用いてもよい。例えば、シリコーン樹脂A、オリゴマーB、オリゴマーC、および、必要に応じてその他の成分のそれぞれを有機溶媒に溶解させた後、得られた溶液を混合してもよい。
<< Method for Producing Silicone Resin Composition >>
The mixing method of the silicone resin A, the oligomer B, and the oligomer C is not particularly limited, and any known method that is performed when two or more kinds of polymers are mixed may be used. For example, the silicone resin A, the oligomer B, the oligomer C, and other components as necessary may be dissolved in an organic solvent, and then the obtained solution may be mixed.
 シリコーン樹脂をより均一に混合させることができ、かつ、調製されたシリコーン樹脂組成物の安定性を向上させることができるため、シリコーン樹脂を揮発性および溶解性が高い有機溶媒に溶解させた後、当該有機溶媒を別の溶媒に置換することが好ましい。 Since the silicone resin can be mixed more uniformly and the stability of the prepared silicone resin composition can be improved, after dissolving the silicone resin in an organic solvent having high volatility and solubility, It is preferable to substitute the organic solvent with another solvent.
 具体的には、まず、揮発性および溶解性の高い有機溶媒(例えば、上記の溶媒P)にシリコーン樹脂Aを加えた後、溶媒Pの沸点付近の温度まで加熱し、攪拌することによって、シリコーン樹脂Aを溶媒Pに溶解させる。
 次に、得られた溶液に、オリゴマーB、オリゴマーC、および、必要に応じてその他の成分を加えた後、上記と同様の方法で、オリゴマーB、オリゴマーC、および、必要に応じてその他の成分を、溶媒Pに溶解させる。
 次に、得られた溶液に、溶媒Pよりも揮発性が低い溶媒(例えば、上記の溶媒Q)を加えた後、溶媒Pの濃度が1%以下になるまで加熱蒸留することにより、溶媒Pから溶媒Qへの置換を行うことができる。溶媒置換を効率的に行うために、加熱蒸留を減圧状態下で行ってもよい。
Specifically, first, after adding the silicone resin A to an organic solvent having high volatility and solubility (for example, the above-mentioned solvent P), the silicone resin A is heated to a temperature near the boiling point of the solvent P and stirred to thereby form the silicone. Resin A is dissolved in solvent P.
Next, after adding oligomer B, oligomer C, and other components as needed to the obtained solution, oligomer B, oligomer C, and other components as needed in the same manner as above. The ingredients are dissolved in solvent P.
Next, a solvent having a lower volatility than the solvent P (for example, the solvent Q described above) is added to the obtained solution, and then the solvent P is distilled by heating until the concentration of the solvent P becomes 1% or less. To solvent Q can be performed. In order to efficiently perform solvent replacement, heat distillation may be performed under reduced pressure.
 溶媒置換を行うことにより、シリコーン樹脂A、オリゴマーB、オリゴマーC、および、その他の成分のそれぞれに含まれ得る残存溶媒、水等を除去することができる。そのため、溶媒置換により、シリコーン樹脂組成物の安定性を向上させることができる。 Residual solvent, water, and the like that can be contained in each of the silicone resin A, the oligomer B, the oligomer C, and other components can be removed by performing solvent substitution. Therefore, the stability of the silicone resin composition can be improved by solvent replacement.
 縮合型シリコーン樹脂を硬化させる際の硬化条件を調整することにより、硬化物の不均一ドメインサイズΞを制御することができる。 By adjusting the curing conditions for curing the condensation type silicone resin, the non-uniform domain size wrinkles of the cured product can be controlled.
 硬化物の不均一ドメインサイズΞを50Å以上とするためには、80℃から125℃までの昇温レートを4℃/分以上とすることが好ましく、4.5℃/分以上とすることがより好ましい。この温度域の昇温レートを大きくすることで、縮合型シリコーン樹脂の硬化初期における分子運動が活性化され、縮合反応が各所で同時に生じるため、架橋点が密である領域の間の距離が大きくなる。80℃から125℃までの昇温レートが1℃/分以下とした場合、縮合型シリコーン樹脂の硬化初期で架橋点が密である領域(ドメイン構造)が形成されにくく、不均一ドメインサイズΞが50Åよりも小さくなりやすい。 In order to set the non-uniform domain size Ξ of the cured product to 50 Å or more, the rate of temperature increase from 80 ° C to 125 ° C is preferably 4 ° C / min or more, and 4.5 ° C / min or more. More preferred. By increasing the temperature rise rate in this temperature range, the molecular motion at the initial stage of curing of the condensation-type silicone resin is activated, and the condensation reaction occurs simultaneously at various places, so the distance between the regions where the crosslinking points are dense is increased. Become. When the rate of temperature increase from 80 ° C. to 125 ° C. is 1 ° C./min or less, it is difficult to form a region (domain structure) where the crosslinking points are dense at the initial stage of curing of the condensation type silicone resin, and the non-uniform domain size wrinkles It tends to be smaller than 50 mm.
 また、80℃から125℃までの昇温レートを大きくすることで、120℃以上の温度に達した時に硬化中の縮合型シリコーン樹脂がゲル状態であり、流動性を有していることがある。このような状態では、ドメインの形成反応がより効果的に進み、大きなドメインが早期に形成される。このように形成された大きなドメインは、後期の硬化反応で固定化される。 Further, by increasing the temperature rising rate from 80 ° C. to 125 ° C., the condensation type silicone resin being cured may be in a gel state and have fluidity when the temperature reaches 120 ° C. or higher. . In such a state, the domain formation reaction proceeds more effectively, and a large domain is formed early. The large domains formed in this way are immobilized by a late curing reaction.
 125℃から180℃までの昇温レートは、0.1℃~7℃/分であることが好ましい。この温度域の昇温レートによって、不均一ドメインサイズを制御することができる。例えば、昇温レートが0.1℃/分であれば、架橋点がより密である領域が形成される反応が生じやすいため、不均一ドメインサイズを100Å以上とすることができる。また、例えば、昇温レートが5.5℃/分であれば、架橋点がより密である領域が形成される反応が完了する前に、硬化反応が完了するため、不均一ドメインサイズを50Å以上100Å未満とすることができる。 The temperature rising rate from 125 ° C. to 180 ° C. is preferably 0.1 ° C. to 7 ° C./min. The heterogeneous domain size can be controlled by the temperature increase rate in this temperature range. For example, when the rate of temperature increase is 0.1 ° C./min, a reaction in which a region having a denser cross-linking point is formed is likely to occur, so that the heterogeneous domain size can be set to 100 mm or more. Further, for example, if the temperature rising rate is 5.5 ° C./min, the curing reaction is completed before the reaction for forming a region where the crosslinking points are denser is completed. It can be made less than 100 mm.
 150℃以上の温度領域で30分間以上保持することが好ましい。この温度領域において保持する時間を十分に確保することで、不均一ドメインサイズがより大きくなり、不均一ドメインサイズが大きい状態で固定化される。
 不均一ドメインサイズが大きい硬化物は、エネルギー的に安定化した状態であり、高硬度、高いクラック耐性および高い耐熱性を兼ね備える。
It is preferable to hold for 30 minutes or more in a temperature range of 150 ° C. or higher. By securing a sufficient holding time in this temperature region, the non-uniform domain size becomes larger and the non-uniform domain size is fixed in a large state.
A cured product having a large heterogeneous domain size is in an energetically stabilized state, and has high hardness, high crack resistance, and high heat resistance.
 また、硬化反応の速度を制御するために、リン酸系触媒、金属系触媒等の硬化促進剤をシリコーン樹脂に添加してもよい。 Further, in order to control the speed of the curing reaction, a curing accelerator such as a phosphoric acid catalyst or a metal catalyst may be added to the silicone resin.
(硬化用触媒)
 硬化用触媒としては、例えば、上記式(A1)で表される構造単位、上記式(A1’)で表される構造単位および上記式(A2)で表される構造単位におけるRが、アルコキシ基または水酸基である場合、加水分解縮合反応を促進するため、塩酸、硫酸、硝酸、燐酸等の無機酸、蟻酸、酢酸、蓚酸、クエン酸、プロピオン酸、酪酸、乳酸、コハク酸等の有機酸を用いることができる。
(Curing catalyst)
Examples of the curing catalyst include R 2 in the structural unit represented by the above formula (A1), the structural unit represented by the above formula (A1 ′), and the structural unit represented by the above formula (A2). In the case of a group or a hydroxyl group, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid and phosphoric acid, organic acids such as formic acid, acetic acid, succinic acid, citric acid, propionic acid, butyric acid, lactic acid and succinic acid are used to promote the hydrolysis and condensation reaction. Can be used.
 硬化用触媒として、酸性化合物だけではなく、アルカリ性の化合物を用いることができる。具体的には、硬化用触媒として、水酸化アンモニウム、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム等を用いることができる。 As the curing catalyst, not only an acidic compound but also an alkaline compound can be used. Specifically, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, or the like can be used as a curing catalyst.
 硬化用触媒として、有機金属化合物触媒を用いることもできる。具体的には、硬化用触媒として、アルミニウム、ジルコニウム、スズ、チタンまたは亜鉛を含有する有機金属化合物触媒を用いることができる。 An organometallic compound catalyst can also be used as the curing catalyst. Specifically, an organometallic compound catalyst containing aluminum, zirconium, tin, titanium, or zinc can be used as the curing catalyst.
 アルミニウムを含有する有機金属化合物触媒としては、例えば、アルミニウムトリアセチルアセテート、アルミニウムトリイソプロポキシドが挙げられる。 Examples of the organometallic compound catalyst containing aluminum include aluminum triacetyl acetate and aluminum triisopropoxide.
 ジルコニウムを含有する有機金属化合物触媒としては、例えば、ジルコニウムテトラアセチルアセトネート、ジルコニウムトリブトキシアセチルアセトネート、ジルコニウムジブトキシジアセチルアセトネート、ジルコニウムテトラノルマルプロポキシド、ジルコニウムテトライソプロポキシド、ジルコニウムテトラノルマルブトキシド、ジルコニウムアシレート、ジルコニウムトリブトキシステアレートが挙げられる。 Examples of the organometallic compound catalyst containing zirconium include zirconium tetraacetylacetonate, zirconium tributoxyacetylacetonate, zirconium dibutoxydiacetylacetonate, zirconium tetranormal propoxide, zirconium tetraisopropoxide, zirconium tetranormal butoxide, Examples include zirconium acylate and zirconium tributoxy systemate.
 スズを含有する有機金属化合物触媒としては、例えば、テトラブチルスズ、モノブチルスズトリクロライド、ジブチルスズジクロライド、ジブチルスズオキサイド、テトラオクチルスズ、ジオクチルスズジクロライド、ジオクチルスズオキサイド、テトラメチルスズ、ジブチルスズラウレート、ジオクチルスズラウレート、ビス(2-エチルヘキサノエート)スズ、ビス(ネオデカノエート)スズ、ジ-n-ブチルビス(エチルへキシルマレート)スズ、ジ-ノルマルブチルビス(2,4-ペンタンジオネート)スズ、ジ-ノルマルブチルブトキシクロロスズ、ジ-ノルマルブチルジアセトキシスズ、ジ-ノルマルブチルジラウリル酸スズ、ジメチルジネオデカノエートスズが挙げられる。 Examples of the organometallic compound catalyst containing tin include tetrabutyltin, monobutyltin trichloride, dibutyltin dichloride, dibutyltin oxide, tetraoctyltin, dioctyltin dichloride, dioctyltin oxide, tetramethyltin, dibutyltin laurate, dioctyltin laurate Rate, bis (2-ethylhexanoate) tin, bis (neodecanoate) tin, di-n-butylbis (ethylhexylmalate) tin, di-normal butylbis (2,4-pentanedionate) tin, di-normal Examples thereof include butyl butoxychlorotin, di-normal butyl diacetoxy tin, di-normal butyl dilaurate tin, and dimethyl dineodecanoate tin.
 チタンを含有する有機金属化合物触媒としては、例えば、チタニウムテトライソプロポキシド、チタニウムテトラノルマルブトキシド、プチルチタネートダイマー、テトラオクチルチタネート、チタンアセチルアセトナート、チタンオクチレングリコレート、チタンエチルアセトアセテートが挙げられる。 Examples of the titanium-containing organometallic compound catalyst include titanium tetraisopropoxide, titanium tetranormal butoxide, butyl titanate dimer, tetraoctyl titanate, titanium acetylacetonate, titanium octylene glycolate, and titanium ethyl acetoacetate. .
 亜鉛を含有する有機金属化合物触媒としては、例えば、亜鉛トリアセチルアセトネートが挙げられる。 Examples of the organometallic compound catalyst containing zinc include zinc triacetylacetonate.
 これらの中でも、得られる硬化物の透明性の観点から、燐酸エステルまたは燐酸が好ましく、燐酸がより好ましい。 Among these, from the viewpoint of transparency of the obtained cured product, phosphoric acid ester or phosphoric acid is preferable, and phosphoric acid is more preferable.
 硬化用触媒を所定の濃度でシリコーン樹脂に添加するためには、硬化用触媒を水、有機溶媒、シリコーン系モノマー、アルコキシシランオリゴマー等に希釈した後、シリコーン樹脂へ添加することが好ましい。 In order to add the curing catalyst to the silicone resin at a predetermined concentration, it is preferable to dilute the curing catalyst in water, an organic solvent, a silicone-based monomer, an alkoxysilane oligomer, etc., and then add it to the silicone resin.
 硬化用触媒の含有量は、シリコーン樹脂の硬化反応の温度、時間、触媒の種類等を考慮して、適宜調整することができる。硬化用触媒の含有量は、縮合型シリコーン樹脂100質量部に対して、0.01質量部以上10質量部以下であることが好ましく、0.01質量部以上5質量部以下であることがより好ましく、0.1質量部以上1質量部以下が特に好ましい。 The content of the curing catalyst can be appropriately adjusted in consideration of the temperature and time of the curing reaction of the silicone resin, the type of catalyst, and the like. The content of the curing catalyst is preferably 0.01 parts by mass or more and 10 parts by mass or less, and more preferably 0.01 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the condensation type silicone resin. Preferably, 0.1 part by mass or more and 1 part by mass or less are particularly preferable.
 硬化用触媒は、シリコーン樹脂へ事前に添加されていてもよいし、シリコーン樹脂の硬化反応を行う直前に、シリコーン樹脂へ添加されてもよい。 The curing catalyst may be added to the silicone resin in advance, or may be added to the silicone resin immediately before the curing reaction of the silicone resin is performed.
(フィラー)
 本実施形態の硬化物は、縮合型シリコーン樹脂硬化物中にフィラーが分散していてもよい。フィラーとしては、波長変換材料が好ましい。
(Filler)
In the cured product of this embodiment, a filler may be dispersed in the condensed silicone resin cured product. As the filler, a wavelength conversion material is preferable.
 波長変換材料としては、例えば、蛍光体、量子ドットが挙げられる。蛍光体としては、例えば、波長570nmから700nmの範囲で蛍光を発する赤色蛍光体、490nmから570nmの範囲で蛍光を発する緑色蛍光体、420nmから480nmの範囲で蛍光を発する青色蛍光体が挙げられる。 Examples of wavelength conversion materials include phosphors and quantum dots. Examples of the phosphor include a red phosphor emitting fluorescence in the wavelength range of 570 nm to 700 nm, a green phosphor emitting fluorescence in the range of 490 nm to 570 nm, and a blue phosphor emitting fluorescence in the range of 420 nm to 480 nm.
《赤色蛍光体》
 赤色蛍光体としては、例えば、赤色破断面を有する破断粒子から構成され、(Mg,Ca,Sr,Ba)Si:Euで表わされるユウロピウム付活アルカリ土類シリコンナイトライド系蛍光体;規則的な結晶成長形状としてほぼ球形状を有する成長粒子から構成され、(Y,La,Gd,Lu)S:Euで表わされるユウロピウム付活希土類オキシカルコゲナイド系蛍光体が挙げられる。
《Red phosphor》
Examples of the red phosphor include europium-activated alkaline earth silicon nitride phosphors composed of fractured particles having a red fracture surface and represented by (Mg, Ca, Sr, Ba) 2 Si 5 N 8 : Eu. A europium-activated rare earth oxychalcogenide phosphor composed of grown particles having a substantially spherical shape as a regular crystal growth shape and represented by (Y, La, Gd, Lu) 2 O 2 S: Eu;
 他の赤色蛍光体としては、Ti、Zr、Hf、Nb、Ta、WおよびMoよりなる群から選ばれる少なくも1種の元素を含有する酸窒化物もしくは酸硫化物またはその両方を含有する蛍光体であって、Al元素の一部または全てがGa元素で置換されたアルファサイアロン構造をもつ酸窒化物を含有する蛍光体が挙げられる。 Other red phosphors include fluorescence containing oxynitride and / or oxysulfide containing at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, W and Mo, or both. And phosphors containing an oxynitride having an alpha sialon structure in which a part or all of the Al element is substituted with a Ga element.
 他の赤色蛍光体としては、(La,Y)S:Eu等のEu付活酸硫化物蛍光体;Y(V,P)O:Eu、Y:Eu等のEu付活酸化物蛍光体;(Ba,Sr,Ca,Mg)SiO:Eu,Mn、(Ba,Mg)SiO:Eu,Mn等のEu,Mn付活珪酸塩蛍光体;(Ca,Sr)S:Eu等のEu付活硫化物蛍光体;YAlO:Eu等のEu付活アルミン酸塩蛍光体;LiY(SiO:Eu、Ca(SiO:Eu、(Sr,Ba,Ca)SiO:Eu、SrBaSiO:Eu等のEu付活珪酸塩蛍光体;(Y,Gd)Al12:Ce、(Tb,Gd)Al12:Ce等のCe付活アルミン酸塩蛍光体;(Ca,Sr,Ba)Si:Eu、(Mg,Ca,Sr,Ba)SiN:Eu、(Mg,Ca,Sr,Ba)AlSiN:Eu等のEu付活窒化物蛍光体;(Mg,Ca,Sr,Ba)AlSiN:Ce等のCe付活窒化物蛍光体;(Sr,Ca,Ba,Mg)10(POCl:Eu,Mn等のEu,Mn付活ハロリン酸塩蛍光体;(BaMg)Si:Eu,Mn、(Ba,Sr,Ca,Mg)(Zn,Mg)Si:Eu,Mn等のEu,Mn付活珪酸塩蛍光体;3.5MgO・0.5MgF・GeO:Mn等のMn付活ゲルマン酸塩蛍光体;Eu付活αサイアロン等のEu付活酸窒化物蛍光体;(Gd,Y,Lu,La):Eu,Bi等のEu,Bi付活酸化物蛍光体;(Gd,Y,Lu,La)S:Eu,Bi等のEu,Bi付活酸硫化物蛍光体;(Gd,Y,Lu,La)VO:Eu,Bi等のEu,Bi付活バナジン酸塩蛍光体;SrY:Eu,Ce等のEu,Ce付活硫化物蛍光体;CaLa:Ce等のCe付活硫化物蛍光体;(Ba,Sr,Ca)MgP:Eu,Mn、(Sr,Ca,Ba,Mg,Zn):Eu,Mn等のEu,Mn付活リン酸塩蛍光体;(Y,Lu)WO:Eu,Mo等のEu,Mo付活タングステン酸塩蛍光体;(Ba,Sr,Ca)Si:Eu,Ce(ここで、x、yおよびzは、1以上の整数を表す。)等のEu,Ce付活窒化物蛍光体;(Ca,Sr,Ba,Mg)10(PO(F,Cl,Br,OH):Eu,Mn等のEu,Mn付活ハロリン酸塩蛍光体;((Y,Lu,Gd,Tb)1-xScCe(Ca,Mg)1-r(Mg,Zn)2+rSiz-qGe12+δ等のCe付活珪酸塩蛍光体が挙げられる。 Other red phosphors include Eu-activated oxysulfide phosphors such as (La, Y) 2 O 2 S: Eu; Eu such as Y (V, P) O 4 : Eu, Y 2 O 3 : Eu Activated oxide phosphor; (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, Mn, (Ba, Mg) 2 SiO 4 : Eu, Mn activated silicate phosphor such as Eu, Mn; (Ca Sr) Eu: Eu-activated sulfide phosphors such as Eu; YAlO 3 : Eu-activated aluminate phosphors such as Eu; LiY 9 (SiO 4 ) 6 O 2 : Eu, Ca 2 Y 8 (SiO 4 ) 6 O 2 : Eu, (Sr, Ba, Ca) 3 SiO 5 : Eu, Sr 2 BaSiO 5 : Eu-activated silicate phosphor such as Eu; (Y, Gd) 3 Al 5 O 12 : Ce, ( Tb, Gd) 3 Al 5 O 12 : Ce-activated aluminate phosphor such as Ce; (Ca, Sr, Ba) 2 Si 5 N 8 : Eu, (Mg, Ca, Sr, Ba) Eu-activated nitride phosphors such as SiN 2 : Eu, (Mg, Ca, Sr, Ba) AlSiN 3 : Eu; Ca, Sr, Ba) Ce-activated nitride phosphors such as AlSiN 3 : Ce; (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, Mn-activated halophosphoric acid such as Eu and Mn Salt phosphors: (Ba 3 Mg) Si 2 O 8 : Eu, Mn, (Ba, Sr, Ca, Mg) 3 (Zn, Mg) Si 2 O 8 : Eu, Mn activated silicates such as Eu, Mn Phosphor; 3.5MgO.0.5MgF 2 .GeO 2 : Mn-activated germanate phosphor such as Mn; Eu-activated oxynitride phosphor such as Eu-activated α-sialon; (Gd, Y, Lu, la) 2 O 3: Eu, Eu Bi, etc., Bi-activated oxide phosphor; ( d, Y, Lu, La) 2 O 2 S: Eu, Eu Bi, etc., Bi Tsukekatsusan sulfide phosphor; (Gd, Y, Lu, La) VO 4: Eu, Eu Bi, etc., with Bi Activated vanadate phosphor; SrY 2 S 4 : Eu, Ce activated sulfide phosphor such as Eu, Ce, etc .; CaLa 2 S 4 : Ce activated sulfide phosphor such as Ce; (Ba, Sr, Ca) MgP 2 O 7: Eu, Mn , (Sr, Ca, Ba, Mg, Zn) 2 P 2 O 7: Eu, Eu such as Mn, Mn-activated phosphate phosphor; (Y, Lu) 2 WO 6 : Eu, Mo-activated tungstate phosphor such as Eu, Mo; (Ba, Sr, Ca) x Si y N z : Eu, Ce (where x, y and z represent an integer of 1 or more) . Eu, Ce-activated nitride phosphors such as (Ca, Sr, Ba, Mg) 10 (PO 4 ) 6 (F, Cl, Br, OH): Eu, Mn-activated halophosphoric acid such as Eu, Mn Salt phosphor; ((Y, Lu, Gd, Tb) 1-x Sc x Ce y ) 2 (Ca, Mg) 1-r (Mg, Zn) 2+ r Si z-q Ge q O 12 + δ, etc. Examples include silicate phosphors.
 他の赤色蛍光体としては、β-ジケトネート、β-ジケトン、芳香族カルボン酸、ブレンステッド酸等のアニオンを配位子とする希土類元素イオン錯体からなる赤色有機蛍光体、ペリレン系顔料(例えば、ジベンゾ{[f,f’]-4,4’,7,7’-テトラフェニル}ジインデノ[1,2,3-cd:1’,2’,3’-lm]ペリレン)、アントラキノン系顔料、レーキ系顔料、アゾ系顔料、キナクリドン系顔料、アントラセン系顔料、イソインドリン系顔料、イソインドリノン系顔料、フタロシアニン系顔料、トリフェニルメタン系塩基性染料、インダンスロン系顔料、インドフェノール系顔料、シアニン系顔料、ジオキサジン系顔料が挙げられる。 Other red phosphors include red organic phosphors composed of rare earth element ion complexes having an anion such as β-diketonate, β-diketone, aromatic carboxylic acid and Bronsted acid as ligands, and perylene pigments (for example, Dibenzo {[f, f ′]-4,4 ′, 7,7′-tetraphenyl} diindeno [1,2,3-cd: 1 ′, 2 ′, 3′-lm] perylene), anthraquinone pigment, Lake pigments, azo pigments, quinacridone pigments, anthracene pigments, isoindoline pigments, isoindolinone pigments, phthalocyanine pigments, triphenylmethane basic dyes, indanthrone pigments, indophenol pigments, Examples thereof include cyanine pigments and dioxazine pigments.
 赤色蛍光体のうち、蛍光発光のピーク波長が580nm以上、好ましくは590nm以上であり、かつ、蛍光発光のピーク波長が620nm以下、好ましくは610nm以下である赤色蛍光体は、橙色蛍光体として好適に用いることができる。このような橙色蛍光体としては、例えば、(Sr,Ba)SiO:Eu、(Sr,Mg)PO:Sn2+、SrCaAlSiN:Euが挙げられる。 Among the red phosphors, a red phosphor having a peak wavelength of fluorescence emission of 580 nm or more, preferably 590 nm or more and a peak wavelength of fluorescence emission of 620 nm or less, preferably 610 nm or less is suitable as an orange phosphor. Can be used. Examples of such orange phosphors include (Sr, Ba) 3 SiO 5 : Eu, (Sr, Mg) 3 PO 4 ) 2 : Sn 2+ , and SrCaAlSiN 3 : Eu.
《黄色蛍光体》
 黄色蛍光体としては、例えば、酸化物系、窒化物系、酸窒化物系、硫化物系、酸硫化物系等の蛍光体が挙げられる。具体的には、RE12:Ce(ここで、REは、Y、Tb、Gd、LuおよびSmからなる群から選ばれる少なくとも1種類の元素を表し、Mは、Al、GaおよびScからなる群から選ばれる少なくとも1種類の元素を表す。)、M 12:Ce(ここで、Mは2価の金属元素を表し、Mは3価の金属元素を表し、Mは4価の金属元素を表す。)等で表されるガーネット構造を有するガーネット系蛍光体;AE:Eu(ここで、AEは、Ba、Sr、Ca、MgおよびZnからなる群から選ばれる少なくとも1種類の元素を表し、Mは、SiおよびGeからなる群から選ばれる少なくとも1種類の元素を表す。)等で表されるオルソシリケート系蛍光体;これらの蛍光体の構成元素である酸素原子の一部を窒素原子で置換した酸窒化物系蛍光体;AEAlSiN:Ce(ここで、AEは、Ba、Sr、Ca、MgおよびZnからなる群から選ばれる少なくとも1種類の元素を表す。)等のCaAlSiN構造を有する窒化物系蛍光体等のCeで付活した蛍光体が挙げられる。
《Yellow phosphor》
Examples of yellow phosphors include oxide-based, nitride-based, oxynitride-based, sulfide-based, and oxysulfide-based phosphors. Specifically, RE 3 M 5 O 12 : Ce (where RE represents at least one element selected from the group consisting of Y, Tb, Gd, Lu and Sm, and M represents Al, Ga and Represents at least one element selected from the group consisting of Sc), M 2 3 M 3 2 M 4 3 O 12 : Ce (where M 2 represents a divalent metal element, and M 3 represents trivalent). . represents a metal element, M 4 represents a tetravalent metal element) garnet phosphor having a garnet structure represented by like; AE 2 M 5 O 4: Eu ( here, AE is, Ba, Sr , And at least one element selected from the group consisting of Ca, Mg and Zn, and M 5 represents at least one element selected from the group consisting of Si and Ge. Phosphors; of these phosphors Oxynitride-based phosphor obtained by substituting a part of oxygen atoms are formed elemental nitrogen atom; AEAlSiN 3: Ce (here, AE is at least 1 selected from the group consisting of Ba, Sr, Ca, Mg and Zn And phosphors activated with Ce such as a nitride-based phosphor having a CaAlSiN 3 structure.
 他の黄色蛍光体としては、CaGa:Eu(Ca,Sr)Ga:Eu、(Ca,Sr)(Ga,Al):Eu等の硫化物系蛍光体;Cax(Si,Al)12(O,N)16:Eu等のSiAlON構造を有する酸窒化物系蛍光体等のEuで付活した蛍光体が挙げられる。 Other yellow phosphors include sulfide phosphors such as CaGa 2 S 4 : Eu (Ca, Sr) Ga 2 S 4 : Eu, (Ca, Sr) (Ga, Al) 2 S 4 : Eu; Examples include phosphors activated with Eu such as oxynitride phosphors having a SiAlON structure such as x (Si, Al) 12 (O, N) 16 : Eu.
《緑色蛍光体》
 緑色蛍光体としては、例えば、破断面を有する破断粒子から構成され、(Mg,Ca,Sr,Ba)Si:Euで表わされるユウロピウム付活アルカリ土類シリコンオキシナイトライド系蛍光体;破断面を有する破断粒子から構成され、(Ba,Ca,Sr,Mg)SiO:Euで表わされるユウロピウム付活アルカリ土類シリケート系蛍光体が挙げられる。
<Green phosphor>
As the green phosphor, for example, a europium-activated alkaline earth silicon oxynitride fluorescent material composed of fractured particles having a fracture surface and represented by (Mg, Ca, Sr, Ba) Si 2 O 2 N 2 : Eu Body: Europium-activated alkaline earth silicate phosphors composed of fractured particles having a fractured surface and represented by (Ba, Ca, Sr, Mg) 2 SiO 4 : Eu.
 他の緑色蛍光体としては、SrAl1425:Eu、(Ba,Sr,Ca)Al:Eu等のEu付活アルミン酸塩蛍光体;(Sr,Ba)AlSi:Eu、(Ba,Mg)SiO:Eu、(Ba,Sr,Ca,Mg)SiO:Eu、(Ba,Sr,Ca)(Mg,Zn)Si:Eu等のEu付活珪酸塩蛍光体;YSiO:Ce,Tb等のCe,Tb付活珪酸塩蛍光体;Sr-Sr:Eu等のEu付活硼酸リン酸塩蛍光体;SrSi-2SrCl:Eu等のEu付活ハロ珪酸塩蛍光体;ZnSiO:Mn等のMn付活珪酸塩蛍光体;CeMgAl1119:Tb、YAl12:Tb等のTb付活アルミン酸塩蛍光体;Ca(SiO:Tb、LaGaSiO14:Tb等のTb付活珪酸塩蛍光体;(Sr,Ba,Ca)Ga:Eu,Tb,Sm等のEu,Tb,Sm付活チオガレート蛍光体;Y(Al,Ga)12:Ce、(Y,Ga,Tb,La,Sm,Pr,Lu)(Al,Ga)12:Ce等のCe付活アルミン酸塩蛍光体;CaScSi12:Ce、Ca(Sc,Mg,Na,Li)Si12:Ce等のCe付活珪酸塩蛍光体;CaSc:Ce等のCe付活酸化物蛍光体;SrSi:Eu、(Sr,Ba,Ca)Si:Eu、Eu付活βサイアロン、Eu付活αサイアロン等のEu付活酸窒化物蛍光体;BaMgAl1017:Eu,Mn等のEu,Mn付活アルミン酸塩蛍光体;SrAl:Eu等のEu付活アルミン酸塩蛍光体;(La,Gd,Y)S:Tb等のTb付活酸硫化物蛍光体;LaPO:Ce,Tb等のCe,Tb付活リン酸塩蛍光体;ZnS:Cu,Al、ZnS:Cu,Au,Al等の硫化物蛍光体;(Y,Ga,Lu,Sc,La)BO:Ce,Tb、NaGd:Ce,Tb、(Ba,Sr)(Ca,Mg,Zn)B:K,Ce,Tb等のCe,Tb付活硼酸塩蛍光体;CaMg(SiOCl:Eu,Mn等のEu,Mn付活ハロ珪酸塩蛍光体;(Sr,Ca,Ba)(Al,Ga,In):Eu等のEu付活チオアルミネート蛍光体またはチオガレート蛍光体;(Ca,Sr)(Mg,Zn)(SiOCl:Eu,Mn等のEu,Mn付活ハロ珪酸塩蛍光体が挙げられる。 Other green phosphors include Eu-activated aluminate phosphors such as Sr 4 Al 14 O 25 : Eu, (Ba, Sr, Ca) Al 2 O 4 : Eu; (Sr, Ba) Al 2 Si 2 O 8 : Eu, (Ba, Mg) 2 SiO 4 : Eu, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, (Ba, Sr, Ca) 2 (Mg, Zn) Si 2 O 7 : Eu Eu activated silicate phosphor such as Y 2 SiO 5 : Ce, Tb activated silicate phosphor such as Ce, Tb; Eu activated such as Sr 2 P 2 O 7 —Sr 2 B 2 O 5 : Eu Borate phosphate phosphor; Sr 2 Si 3 O 8 -2SrCl 2 : Eu-activated halosilicate phosphor such as Eu; Zn 2 SiO 4 : Mn-activated silicate phosphor such as Mn; CeMgAl 11 O 19 : Tb, Y 3 Al 5 O 12 : Tb -activated aluminate of Tb such Phosphor; Ca 2 Y 8 (SiO 4 ) 6 O 2: Tb, La 3 Ga 5 SiO 14: Tb -activated silicate phosphors such as Tb; (Sr, Ba, Ca ) Ga 2 S 4: Eu, Eu, Tb, Sm activated thiogallate phosphors such as Tb, Sm; Y 3 (Al, Ga) 5 O 12 : Ce, (Y, Ga, Tb, La, Sm, Pr, Lu) 3 (Al, Ga) 5 O 12 : Ce-activated aluminate phosphor such as Ce; Ca 3 Sc 2 Si 3 O 12 : Ce, Ca 3 (Sc, Mg, Na, Li) 2 Si 3 O 12 : Ce-activated such as Ce Silicate phosphor; Ce-activated oxide phosphor such as CaSc 2 O 4 : Ce; SrSi 2 O 2 N 2 : Eu, (Sr, Ba, Ca) Si 2 O 2 N 2 : Eu, Eu-activated β Eu-activated oxynitride phosphors such as sialon and Eu-activated α-sialon; aMgAl 10 O 17: Eu, Eu such as Mn, Mn-activated aluminate phosphor; SrAl 2 O 4: Eu-activated aluminate phosphor such as Eu; (La, Gd, Y ) 2 O 2 S: Tb-activated oxysulfide phosphors such as Tb; LaPO 4 : Ce, Tb-activated phosphate phosphors such as Ce and Tb; Sulfide phosphors such as ZnS: Cu, Al, ZnS: Cu, Au, Al (Y, Ga, Lu, Sc, La) BO 3 : Ce, Tb, Na 2 Gd 2 B 2 O 7 : Ce, Tb, (Ba, Sr) 2 (Ca, Mg, Zn) B 2 O 6 : Ce, Tb activated borate phosphors such as K, Ce, Tb; Ca 8 Mg (SiO 4 ) 4 Cl 2 : Eu, Mn activated halosilicate phosphors such as Eu, Mn; (Sr, Ca, Ba) ) (Al, Ga, in) 2 S 4: Eu activated thioaluminate fireflies such as Eu Body or thiogallate phosphor; (Ca, Sr) 8 ( Mg, Zn) (SiO 4) 4 Cl 2: Eu, Eu such as Mn, Mn-activated halo silicate phosphor can be cited.
 他の緑色蛍光体としては、ピリジン-フタルイミド縮合誘導体、ベンゾオキサジノン系、キナゾリノン系、クマリン系、キノフタロン系、ナルタル酸イミド系等の蛍光色素;ヘキシルサリチレートを配位子として有するテルビウム錯体等の有機蛍光体が挙げられる。 Other green phosphors include pyridine-phthalimide condensed derivatives, benzoxazinone-based, quinazolinone-based, coumarin-based, quinophthalone-based, naltalimide-based fluorescent dyes; terbium complexes having hexyl salicylate as a ligand, etc. And organic phosphors.
《青色蛍光体》
 青色蛍光体としては、規則的な結晶成長形状としてほぼ六角形状を有する成長粒子から構成され、BaMgAl1017:Euで表わされるユウロピウム付活バリウムマグネシウムアルミネート系蛍光体;規則的な結晶成長形状としてほぼ球形状を有する成長粒子から構成され、(Ca,Sr,Ba)(POCl:Euで表わされるユウロピウム付活ハロリン酸カルシウム系蛍光体;規則的な結晶成長形状としてほぼ立方体形状を有する成長粒子から構成され、(Ca,Sr,Ba)Cl:Euで表わされるユウロピウム付活アルカリ土類クロロボレート系蛍光体;破断面を有する破断粒子から構成され、(Sr,Ca,Ba)Al:Euまたは(Sr,Ca,Ba)Al4O25:Euで表わされるユウロピウム付活アルカリ土類アルミネート系蛍光体が挙げられる。
<Blue phosphor>
As the blue phosphor, a europium-activated barium magnesium aluminate phosphor composed of grown particles having a substantially hexagonal shape as a regular crystal growth shape and represented by BaMgAl 10 O 17 : Eu; a regular crystal growth shape A europium-activated calcium halophosphate phosphor expressed by (Ca, Sr, Ba) 5 (PO 4 ) 3 Cl: Eu; a substantially cubic shape as a regular crystal growth shape A europium-activated alkaline earth chloroborate-based phosphor represented by (Ca, Sr, Ba) 2 B 5 O 9 Cl: Eu; a fractured particle having a fracture surface (Sr , Ca, Ba) Al 2 O 4: Eu or (Sr, Ca, Ba) 4 Al 1 4O 25: Eu Europium-activated alkaline earth aluminate phosphors represented the like.
 他の青色蛍光体としては、Sr:Sn等のSn付活リン酸塩蛍光体;SrAl1425:Eu、BaMgAl1017:Eu、BaAl13:Eu等のEu付活アルミン酸塩蛍光体;SrGa:Ce、CaGa:Ce等のCe付活チオガレート蛍光体;(Ba,Sr,Ca)MgAl1017:Eu、BaMgAl1017:Eu,Tb,Sm等のEu付活アルミン酸塩蛍光体;(Ba,Sr,Ca)MgAl1017:Eu,Mn等のEu,Mn付活アルミン酸塩蛍光体;(Sr,Ca,Ba,Mg)10(POCl:Eu、(Ba,Sr,Ca)(PO(Cl,F,Br,OH):Eu,Mn,Sb等のEu付活ハロリン酸塩蛍光体;BaAlSi:Eu、(Sr,Ba)MgSi:Eu等のEu付活珪酸塩蛍光体;Sr:Eu等のEu付活リン酸塩蛍光体;ZnS:Ag、ZnS:Ag,Al等の硫化物蛍光体;YSiO:Ce等のCe付活珪酸塩蛍光体;CaWO等のタングステン酸塩蛍光体;(Ba,Sr,Ca)BPO:Eu,Mn、(Sr,Ca)10(PO・nB:Eu、2SrO・0.84P・0.16B:Eu等のEu,Mn付活硼酸リン酸塩蛍光体;SrSi・2SrCl:Eu等のEu付活ハロ珪酸塩蛍光体が挙げられる。 Other blue phosphors include Sn-activated phosphate phosphors such as Sr 2 P 2 O 7 : Sn; Sr 4 Al 14 O 25 : Eu, BaMgAl 10 O 17 : Eu, BaAl 8 O 13 : Eu, etc. Eu-activated aluminate phosphors; Ce-activated thiogallate phosphors such as SrGa 2 S 4 : Ce, CaGa 2 S 4 : Ce; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, BaMgAl 10 O 17 : Eu-activated aluminate phosphor such as Eu, Tb, Sm; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, Mn-activated aluminate phosphor such as Eu, Mn; (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, (Ba, Sr, Ca) 5 (PO 4 ) 3 (Cl, F, Br, OH): Eu-activated halophosphoric acid such as Eu, Mn, Sb Salt phosphor; B Al 2 Si 2 O 8: Eu , (Sr, Ba) 3 MgSi 2 O 8: Eu -activated silicate phosphors such as Eu; Sr 2 P 2 O 7 : Eu -activated phosphate phosphor such as Eu; Sulfide phosphors such as ZnS: Ag, ZnS: Ag, Al; Ce activated silicate phosphors such as Y 2 SiO 5 : Ce; Tungsten phosphors such as CaWO 4 ; (Ba, Sr, Ca) BPO 5: Eu, Mn, (Sr , Ca) 10 (PO 4) 6 · nB 2 O 3: Eu, 2SrO · 0.84P 2 O 5 · 0.16B 2 O 3: Eu such as Eu, Mn-activated borate Examples include phosphate phosphors; Eu-activated halosilicate phosphors such as Sr 2 Si 3 O 8 .2SrCl 2 : Eu.
 他の青色蛍光体としては、ナフタル酸イミド系化合物、ベンゾオキサゾール系化合物、スチリル系化合物、クマリン系化合物、ピラリゾン系化合物、トリアゾール系化合物等の蛍光色素;ツリウム錯体等の有機蛍光体等が挙げられる。 Examples of other blue phosphors include fluorescent dyes such as naphthalic acid imide compounds, benzoxazole compounds, styryl compounds, coumarin compounds, pyrarizone compounds, triazole compounds, and organic phosphors such as thulium complexes. .
 これらの蛍光体は、1種類のみを単独で使用してもよいし、2種類以上を組み合わせて使用してもよい。 These phosphors may be used alone or in combination of two or more.
《量子ドット》
 量子ドットとしては、例えば、InAs系の量子ドット、CdE(E=S,Se,Te)系の量子ドット(CdSSe1-x/ZnS等)が挙げられる。
《Quantum dots》
Examples of the quantum dots include InAs quantum dots and CdE (E = S, Se, Te) quantum dots (CdS x Se 1-x / ZnS, etc.).
 波長変換材料の含有量は、縮合型シリコーン樹脂硬化物と波長変換材料との合計含有量に対して、通常、20質量%以上95質量%以下であり、40質量%以上95質量%以下であることが好ましく、50質量%以上95質量%以下であることがより好ましく、60質量%以上95質量%以下であることがさらに好ましい。 The content of the wavelength conversion material is usually 20% by mass to 95% by mass and 40% by mass to 95% by mass with respect to the total content of the condensed silicone resin cured product and the wavelength conversion material. It is preferably 50% by mass or more and 95% by mass or less, and more preferably 60% by mass or more and 95% by mass or less.
 また、本実施形態の硬化物は、シリコーンフィラーを含んでいてもよい。シリコーンフィラーとしては、例えば、シリコーンレジンフィラー、シリコーンゴムフィラーが挙げられる。 Further, the cured product of the present embodiment may contain a silicone filler. Examples of the silicone filler include a silicone resin filler and a silicone rubber filler.
(その他の成分)
 本実施形態の硬化物は、縮合型シリコーン樹脂硬化物およびフィラーの他に、無機粒子、シランカップリング剤等の添加剤を含んでいてもよい。
(Other ingredients)
The cured product of this embodiment may contain additives such as inorganic particles and a silane coupling agent in addition to the condensed silicone resin cured product and the filler.
(無機粒子)
 無機粒子は、本実施形態の硬化物中で、光を散乱させて波長変換材料を効果的に励起させることができる。また、本実施形態の硬化物の製造段階において、シリコーン樹脂を含む組成物中で波長変換材料が沈降することを抑制することができる。
(Inorganic particles)
Inorganic particle | grains can scatter light in the hardened | cured material of this embodiment, and can excite the wavelength conversion material effectively. Moreover, in the manufacturing stage of the hardened | cured material of this embodiment, it can suppress that a wavelength conversion material settles in the composition containing a silicone resin.
 無機粒子としては、例えば、ケイ素、チタン、ジルコニア、アルミニウム、鉄、亜鉛等の酸化物、カーボンブラック、チタン酸バリウム、ケイ酸カルシウム、炭酸カルシウムが挙げられ、ケイ素、チタン、ジルコニア、アルミニウム等の酸化物が好ましい。 Examples of inorganic particles include oxides such as silicon, titanium, zirconia, aluminum, iron, and zinc, carbon black, barium titanate, calcium silicate, and calcium carbonate, and oxidation of silicon, titanium, zirconia, aluminum, and the like. Things are preferred.
 無機粒子の形状としては、例えば、略球状、板状、柱状、針状、ウィスカー状、繊維状が挙げられ、より均一な組成物が得られるため、略球状が好ましい。 Examples of the shape of the inorganic particles include a substantially spherical shape, a plate shape, a columnar shape, a needle shape, a whisker shape, and a fiber shape, and a substantially uniform composition is obtained, so that a substantially spherical shape is preferable.
 本実施形態の硬化物に含まれる無機粒子は、1種類のみであってもよく、2種類以上であってもよいが、粒径の異なる2種類以上の無機粒子であることが好ましい。具体的には、本実施形態の硬化物が、一次粒子の平均粒子径が100nm以上500nm以下である無機粒子と、同じく一次粒子の平均粒子径が100nm未満である無機粒子とを含むことがより好ましい。一次粒子の平均粒径が異なる2種類以上の無機粒子を含むことにより、光の散乱による波長変換材料の励起効率が向上し、かつ、シリコーン樹脂を含む組成物中での波長変換材料の沈降が抑制される。 The inorganic particles contained in the cured product of the present embodiment may be only one type or two or more types, but are preferably two or more types of inorganic particles having different particle sizes. Specifically, the cured product of the present embodiment more preferably includes inorganic particles having an average primary particle diameter of 100 nm to 500 nm and inorganic particles having an average primary particle diameter of less than 100 nm. preferable. By including two or more kinds of inorganic particles having different average particle diameters of primary particles, the excitation efficiency of the wavelength conversion material by light scattering is improved, and the precipitation of the wavelength conversion material in the composition containing the silicone resin is improved. It is suppressed.
 無機粒子の一次粒子の平均粒子径は、例えば、電子顕微鏡等により粒子を直接観察する画像イメージング法により求めることができる。
 具体的には、まず、測定対象となる無機粒子を任意の溶媒に分散させた液を調製し、得られた分散液をスライドガラス等に滴下し、乾燥させる。接着テープの接着面に無機粒子を直接散布し、無機粒子を付着させたものを作製してもよい。
 次に、走査型電子顕微鏡(SEM)または透過型電子顕微鏡(TEM)により粒子を直接観察し、得られた形状から無機粒子の寸法を割り出すことにより、無機粒子の一次粒子の平均粒子径が求められる。
The average particle diameter of the primary particles of the inorganic particles can be determined by, for example, an image imaging method in which the particles are directly observed with an electron microscope or the like.
Specifically, first, a liquid in which inorganic particles to be measured are dispersed in an arbitrary solvent is prepared, and the obtained dispersion liquid is dropped on a slide glass or the like and dried. Alternatively, inorganic particles may be directly sprayed on the adhesive surface of the adhesive tape to produce inorganic particles attached thereto.
Next, the average particle diameter of the primary particles of the inorganic particles is obtained by directly observing the particles with a scanning electron microscope (SEM) or a transmission electron microscope (TEM) and determining the size of the inorganic particles from the obtained shape. It is done.
 無機粒子の含有量は、縮合型シリコーン樹脂硬化物100質量部に対して、0.01質量部以上100質量部以下であることが好ましく、0.1質量部以上50質量部以下であることがより好ましい。 The content of the inorganic particles is preferably 0.01 parts by mass or more and 100 parts by mass or less, and preferably 0.1 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the cured silicone resin product. More preferred.
(シランカップリング剤)
 シランカップリング剤としては、例えば、ビニル基、エポキシ基、スチリル基、メタクリル基、アクリル基、アミノ基、ウレイド基、メルカプト基、スルフィド基およびイソシアネート基からなる群から選ばれる少なくとも1種の基を有するシランカップリング剤が挙げられる。これらの中でも、エポキシ基またはメルカプト基を有するカップリング剤が好ましい。
(Silane coupling agent)
Examples of the silane coupling agent include at least one group selected from the group consisting of a vinyl group, an epoxy group, a styryl group, a methacryl group, an acrylic group, an amino group, a ureido group, a mercapto group, a sulfide group, and an isocyanate group. The silane coupling agent which has is mentioned. Among these, a coupling agent having an epoxy group or a mercapto group is preferable.
 シランカップリング剤の具体例としては、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、3-グリシドキシプロピルメチルジメトキシシラン、3-グリシドキシプロピルトリメトキシシラン、3-グリシドキシプロピルメチルジエトキシシラン、3-グリシドキシプロピルトリエトキシシラン、3-メルカプトプロピルメチルジメトキシシラン、3-メルカプトプロピルトリメトキシシランが挙げられる。 Specific examples of the silane coupling agent include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxy. Examples thereof include propylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane.
 シリコーン樹脂を含む組成物にシランカップリング剤が含まれる場合、シランカップリング剤に含まれるケイ素原子も29Si-NMRのシグナルとして検出されるが、本明細書においては、シリコーン樹脂を含む組成物のシグナル面積の計算時にシランカップリング剤のシグナルも含めるものとする。 When a composition containing a silicone resin contains a silane coupling agent, the silicon atom contained in the silane coupling agent is also detected as a 29 Si-NMR signal. In the present specification, a composition containing a silicone resin is used. The signal of the silane coupling agent shall be included in the calculation of the signal area.
 シランカップリング剤の含有量は、シリコーン樹脂の合計含有量100質量部に対して、0.0001質量部以上1.0質量部以下であることが好ましく、0.001質量部以上0.1質量部以下であることがより好ましい。 The content of the silane coupling agent is preferably 0.0001 parts by mass or more and 1.0 parts by mass or less, and 0.001 parts by mass or more and 0.1 parts by mass with respect to 100 parts by mass of the total content of the silicone resin. It is more preferable that the amount is not more than parts.
(その他の添加剤)
 本実施形態の硬化物は、上述の材料以外の添加剤を含んでもよい。上述の材料以外の添加剤としては、例えば、分散剤、レベリング剤、消泡剤が挙げられる。
(Other additives)
The hardened | cured material of this embodiment may also contain additives other than the above-mentioned material. Examples of additives other than the above-described materials include dispersants, leveling agents, and antifoaming agents.
(硬化物)
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物は、上記式(A3)で表される構造単位を含むことが好ましい。また、縮合型シリコーン樹脂硬化物は、上記式(A1)で表される構造単位、上記式(A1’)で表される構造単位および上記式(A2)で表される構造単位からなる群から選ばれる1種以上の構造単位を更に含むことがより好ましい。
(Cured product)
The condensed silicone resin cured product contained in the cured product of the present embodiment preferably includes a structural unit represented by the above formula (A3). Further, the condensed silicone resin cured product is selected from the group consisting of the structural unit represented by the above formula (A1), the structural unit represented by the above formula (A1 ′), and the structural unit represented by the above formula (A2). More preferably, it further contains one or more selected structural units.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物は、上記式(C1)、上記式(C1’)、上記式(C2)、上記式(C3)または上記式(C4)で表される構造単位をさらに含んでいてもよい。 The condensed silicone resin cured product contained in the cured product of the present embodiment is represented by the above formula (C1), the above formula (C1 ′), the above formula (C2), the above formula (C3), or the above formula (C4). Further structural units may be included.
 本実施形態の硬化物に含まれる縮合型シリコーン樹脂硬化物において、T3体の含有量は、縮合型シリコーン樹脂硬化物の全構造単位の合計含有量に対して、50モル%以上であることが好ましい。換言すると、T3ケイ素原子の含有量は、縮合型シリコーン樹脂硬化物の全ケイ素原子の合計含有量に対して、50モル%以上であることが好ましい。さらに、T3ケイ素原子の含有量は、縮合型シリコーン樹脂硬化物の全ケイ素原子の合計含有量に対して、60モル%以上であることがより好ましく、70モル%以上であることがさらに好ましく、75モル%以上であることがよりさらに好ましい。 In the condensed silicone resin cured product contained in the cured product of the present embodiment, the content of the T3 body is 50 mol% or more with respect to the total content of all structural units of the condensed silicone resin cured product. preferable. In other words, the content of T3 silicon atoms is preferably 50 mol% or more with respect to the total content of all silicon atoms of the condensed silicone resin cured product. Furthermore, the content of T3 silicon atoms is more preferably 60 mol% or more, further preferably 70 mol% or more, with respect to the total content of all silicon atoms of the condensed silicone resin cured product, More preferably, it is 75 mol% or more.
 不均一ドメインサイズが50Å以上である硬化物は、応力かかった場合、応力を硬化物全体に分散させることができる。
 一方、不均一ドメインサイズが50Åより小さい硬化物は、T3ケイ素原子の分布が均一である。そのため、応力がかかった場合、応力を硬化物全体に分散させることができず、クラックが入りやすくなる。
When a cured product having a non-uniform domain size of 50 mm or more is stressed, the stress can be dispersed throughout the cured product.
On the other hand, a cured product having a non-uniform domain size of less than 50 mm has a uniform distribution of T3 silicon atoms. Therefore, when stress is applied, the stress cannot be dispersed throughout the cured product, and cracks are easily generated.
 不均一ドメインサイズが50Å以上である硬化物は、高硬度と高いクラック耐性とを兼ね備えており、例えば250℃で継続的に加熱された場合であっても、加熱による応力を硬化物全体に分散させることができる。 A cured product having a non-uniform domain size of 50 mm or more has both high hardness and high crack resistance. For example, even when continuously heated at 250 ° C., the stress caused by heating is dispersed throughout the cured product. Can be made.
 本実施形態によれば、高硬度と高いクラック耐性と高い耐熱性とを兼ね備えた硬化物を提供することができる。 According to the present embodiment, a cured product having both high hardness, high crack resistance, and high heat resistance can be provided.
<波長変換シート>
 図2は、本実施形態の波長変換シートを示す模式図である。波長変換シート30は、縮合型シリコーン樹脂硬化物40と、縮合型シリコーン樹脂硬化物40に分散した波長変換材料であるフィラー50とを含む硬化物を形成材料としている。このような波長変換シート30は、上述した本実施形態の硬化物を形成材料とし、薄板状に成形されたものである。
<Wavelength conversion sheet>
FIG. 2 is a schematic diagram showing the wavelength conversion sheet of the present embodiment. The wavelength conversion sheet 30 is formed of a cured product that includes a condensed silicone resin cured product 40 and a filler 50 that is a wavelength conversion material dispersed in the condensed silicone resin cured product 40. Such a wavelength conversion sheet 30 is formed into a thin plate shape using the above-described cured product of the present embodiment as a forming material.
 波長変換シート30は、一方の面に基材を備えてもよい。基材としては、波長変換シートの用途により適宜選択すればよいが、例えば、アルミニウム等の金属基材;石英、サファイア等の透明性基材が挙げられる。 The wavelength conversion sheet 30 may include a base material on one surface. As a base material, what is necessary is just to select suitably by the use of a wavelength conversion sheet | seat, For example, metal base materials, such as aluminum; Transparent base materials, such as quartz and sapphire, are mentioned.
 本実施形態の波長変換シートは、LED、太陽電池、半導体レーザー、フォトダイオード、CCD、CMOS等における波長変換の用途に用いることができる。特に、本実施形態の波長変換シートは耐熱性に優れているため、高温下での使用が予想される半導体レーザーの発光部に好適に用いることができる。 The wavelength conversion sheet of the present embodiment can be used for wavelength conversion in LEDs, solar cells, semiconductor lasers, photodiodes, CCDs, CMOSs, and the like. In particular, since the wavelength conversion sheet of this embodiment is excellent in heat resistance, it can be suitably used for a light emitting part of a semiconductor laser that is expected to be used at high temperatures.
 本実施形態の波長変換シートは、上述した無機粒子を含んでいてもよい。無機粒子を含有することにより、波長変換シート中で、光を散乱させて波長変換材料を効果的に励起させることができる。また、波長変換シートの製造段階において、シリコーン樹脂を含む組成物中で波長変換材料が沈降することを抑制することができる。 The wavelength conversion sheet of this embodiment may contain the inorganic particles described above. By containing the inorganic particles, the wavelength conversion material can be effectively excited by scattering light in the wavelength conversion sheet. Moreover, it can suppress that a wavelength conversion material settles in the composition containing a silicone resin in the manufacture stage of a wavelength conversion sheet.
(膜厚)
 波長変換シートの厚み(膜厚)は、波長変換シートを安定的に製造できるため、10μm以上であることが好ましい。また、波長変換シートの厚みは、波長変換シートの光学特性や耐熱性を高める観点から、1mm以下であることが好ましく、500μm以下であることがより好ましく、200μm以下であることがさらに好ましい。波長変換シートの厚みが1mm以下であることで、シリコーン樹脂による光吸収や光散乱を低減することができる。
(Film thickness)
Since the wavelength conversion sheet can be stably produced, the thickness (film thickness) of the wavelength conversion sheet is preferably 10 μm or more. The thickness of the wavelength conversion sheet is preferably 1 mm or less, more preferably 500 μm or less, and even more preferably 200 μm or less from the viewpoint of enhancing the optical properties and heat resistance of the wavelength conversion sheet. When the thickness of the wavelength conversion sheet is 1 mm or less, light absorption and light scattering by the silicone resin can be reduced.
 波長変換シートの膜厚は、例えば、マイクロメーターを用いて波長変換シートの複数箇所における膜厚を測定し、その平均値を算出することにより求めることができる。複数箇所とは、例えば、波長変換シートの形状が四角形の場合、波長変換シートの中心部1箇所と、波長変換シートの隅部4箇所の合計5箇所が挙げられる。 The film thickness of the wavelength conversion sheet can be determined, for example, by measuring the film thickness at a plurality of locations of the wavelength conversion sheet using a micrometer and calculating the average value. For example, when the shape of the wavelength conversion sheet is a quadrangle, the plurality of locations may include a total of five locations including one central portion of the wavelength conversion sheet and four corner portions of the wavelength conversion sheet.
 波長変換シート30は、支持基材上に形成されていてもよい。支持基材としては、公知の金属、フィルム、ガラス、セラミック、紙等を形成材料とする基材を使用することができる。 The wavelength conversion sheet 30 may be formed on a support base material. As the support base material, a base material using a known metal, film, glass, ceramic, paper, or the like as a forming material can be used.
 支持基材の形成材料の具体例として、石英ガラス、ホウケイ酸ガラス、サファイア等の透明な無機酸化物ガラス;アルミニウム(アルミニウム合金も含む)、亜鉛、銅、鉄等の金属板や箔;セルロースアセテート、ポリエチレンテレフタレート(PET)、ポリエチレン、ポリエステル、ポリアミド、ポリイミド、ポリフェニレンスルフィド、ポリスチレン、ポリプロピレン、ポリカーボネート、ポリビニルアセタール、アラミド等のプラスチックのフィルム;上記プラスチックがラミネートされた紙;上記プラスチックによりコーティングされた紙;上記金属がラミネートまたは蒸着された紙;上記金属がラミネートまたは蒸着されたプラスチックフイルムが挙げられる。これらの中でも、無機酸化物ガラスまたは金属板が好ましい。 Specific examples of the material for forming the supporting substrate include transparent inorganic oxide glasses such as quartz glass, borosilicate glass, and sapphire; metal plates and foils such as aluminum (including aluminum alloys), zinc, copper, and iron; cellulose acetate Polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, aramid and other plastic films; paper laminated with the plastic; paper coated with the plastic; Examples include a paper on which the metal is laminated or vapor-deposited; and a plastic film on which the metal is laminated or vapor-deposited. Among these, inorganic oxide glass or a metal plate is preferable.
 支持基材の厚みは、30μm以上が好ましく、50μm以上がより好ましい。支持基材の厚みが30μm以上であると、波長変換シートの形状を保護するのに十分な強度を有する。また、支持基材の厚みは、経済性の観点から、5000μm以下が好ましく、3000μm以下がより好ましい。 The thickness of the supporting substrate is preferably 30 μm or more, and more preferably 50 μm or more. When the thickness of the support substrate is 30 μm or more, the support substrate has sufficient strength to protect the shape of the wavelength conversion sheet. The thickness of the supporting substrate is preferably 5000 μm or less, more preferably 3000 μm or less, from the viewpoint of economy.
(波長変換シートの製造方法)
 本実施形態の波長変換シートの製造方法について説明する。
(Wavelength conversion sheet manufacturing method)
The manufacturing method of the wavelength conversion sheet of this embodiment is demonstrated.
 まず、波長変換材料を上述したシリコーン樹脂組成物(縮合型シリコーン樹脂+溶媒)に分散させた、波長変換材料含有シリコーン樹脂組成物を調製する。 First, a wavelength conversion material-containing silicone resin composition in which a wavelength conversion material is dispersed in the above-described silicone resin composition (condensation type silicone resin + solvent) is prepared.
 波長変換材料の拡散や波長変換材料含有シリコーン樹脂組成物の塗布性改善のために、波長変換材料含有シリコーン樹脂組成物には、無機粒子、接着助剤等の添加物が含まれていてもよい。 In order to diffuse the wavelength conversion material and improve the coating property of the wavelength conversion material-containing silicone resin composition, the wavelength conversion material-containing silicone resin composition may contain additives such as inorganic particles and adhesion aids. .
 これらの成分を所定の組成になるよう配合した後、公知の撹拌・混練機を用いて均質に混合分散することで、波長変換材料含有シリコーン樹脂組成物を得ることができる。公知の撹拌・混練機としては、例えば、ホモジナイザー、自公転型攪拌機、3本ローラー、ボールミル、遊星式ボールミル、ビーズミルが挙げられる。混合分散後または混合分散の過程において、必要に応じて、真空または減圧条件下で、波長変換材料含有シリコーン樹脂組成物を脱泡してもよい。 After blending these components so as to have a predetermined composition, a wavelength conversion material-containing silicone resin composition can be obtained by uniformly mixing and dispersing using a known stirring and kneading machine. Examples of known stirring and kneading machines include a homogenizer, a self-revolving stirrer, a three-roller, a ball mill, a planetary ball mill, and a bead mill. After mixing / dispersing or in the process of mixing / dispersing, the wavelength conversion material-containing silicone resin composition may be defoamed under vacuum or reduced pressure as necessary.
 次に、得られた波長変換材料含有シリコーン樹脂組成物を支持基材上に塗布する。波長変換材料含有シリコーン樹脂組成物の塗布は、公知の塗布装置を用いて行うことができる。公知の塗布装置としては、例えば、リバースロールコーター、ブレードコーター、スリットダイコーター、ダイレクトグラビアコーター、オフセットグラビアコーター、リバースロールコーター、ブレードコーター、キスコーター、ナチュラルロールコーター、エアーナイフコーター、ロールブレードコーター、バリバーロールブレードコーター、トゥーストリームコーター、ロッドコーター、ワイヤーバーコーター、アプリケーター、ディップコーター、カーテンコーター、スピンコーター、ナイフコーターが挙げられる。これらの中でも、得られる波長変換シートの膜厚が均一になりやすいことから、スリットダイコーターまたはアプリケーターが好ましい。 Next, the obtained wavelength conversion material-containing silicone resin composition is applied onto a supporting substrate. Application | coating of the wavelength conversion material containing silicone resin composition can be performed using a well-known coating device. Known coating devices include, for example, reverse roll coaters, blade coaters, slit die coaters, direct gravure coaters, offset gravure coaters, reverse roll coaters, blade coaters, kiss coaters, natural roll coaters, air knife coaters, roll blade coaters, varistors. Examples include a bar roll blade coater, a two stream coater, a rod coater, a wire bar coater, an applicator, a dip coater, a curtain coater, a spin coater, and a knife coater. Among these, a slit die coater or an applicator is preferable because the film thickness of the obtained wavelength conversion sheet tends to be uniform.
 他の塗布法としては、スクリーン印刷、グラビア印刷、平版印刷等の印刷法等が挙げられる。これらの中でも、簡便性の観点から、スクリーン印刷が好ましい。 Other application methods include printing methods such as screen printing, gravure printing, and lithographic printing. Among these, screen printing is preferable from the viewpoint of simplicity.
 次に、支持基材上に形成された塗布膜を加熱硬化させて波長変換シートを得る。塗布膜の加熱は、自然対流式オーブン、送風式オーブン、真空オーブン、イナートオーブン、ホットプレート、熱プレス機、赤外線ヒーター等の機器を用いて行われる。これらの中でも、生産性の観点から、送風式オーブンが好ましい。 Next, the coating film formed on the support substrate is heated and cured to obtain a wavelength conversion sheet. The coating film is heated using a natural convection oven, a blower oven, a vacuum oven, an inert oven, a hot plate, a hot press, an infrared heater, or the like. Among these, a blower oven is preferable from the viewpoint of productivity.
 塗布膜の加熱条件としては、例えば、40℃~250℃で、5分間~100時間加熱する方法が挙げられる。加熱時間は、1~30時間であることが好ましく、2~10時間であることがより好ましく、3~8時間であることが更に好ましい。加熱時間がこの範囲内にあることで、十分に溶媒を除去できるとともに、加熱時の着色を防ぐことができる。 Examples of the heating conditions for the coating film include a method of heating at 40 ° C. to 250 ° C. for 5 minutes to 100 hours. The heating time is preferably 1 to 30 hours, more preferably 2 to 10 hours, still more preferably 3 to 8 hours. When the heating time is within this range, the solvent can be sufficiently removed and coloring during heating can be prevented.
 波長変換材料含有シリコーン樹脂組成物を支持基材上に塗布した後、250℃以下の温度の雰囲気内に放置することによって塗布膜を硬化させてもよく、例えば、40℃~200℃の温度の雰囲気内に放置することによって塗布膜を硬化させてもよい。また、塗布膜の硬化の際には、波長変換材料含有シリコーン樹脂組成物中に存在する溶媒や水を低減し、かつ、シリコーン樹脂Aとシリコーンオリゴマーとの縮合反応速度を制御するために、例えば、40℃~60℃で5分間~30分間、次いで、60℃~100℃で10分間~60分間、次いで、140℃~200℃で30分間~5時間というように、塗布膜を段階的に硬化させてもよい。 After coating the wavelength conversion material-containing silicone resin composition on the support substrate, the coating film may be cured by leaving it in an atmosphere having a temperature of 250 ° C. or lower. The coating film may be cured by leaving it in the atmosphere. Further, when curing the coating film, in order to reduce the solvent and water present in the wavelength conversion material-containing silicone resin composition, and to control the condensation reaction rate between the silicone resin A and the silicone oligomer, for example, The coating film is formed in stages, such as at 40 to 60 ° C. for 5 to 30 minutes, then at 60 to 100 ° C. for 10 to 60 minutes, and then at 140 to 200 ° C. for 30 to 5 hours. It may be cured.
 塗布膜の硬化条件について、80℃から125℃までの昇温レートを4℃/分以上とすることで、波長変換シートを形成する硬化物の不均一ドメインサイズΞを大きくすることができる。 About the hardening conditions of a coating film, the nonuniform domain size flaw of the hardened | cured material which forms a wavelength conversion sheet can be enlarged by making the temperature increase rate from 80 degreeC to 125 degreeC into 4 degrees C / min or more.
 また、80℃から125℃までの昇温レートを大きくすることで、120℃以上の温度に達した時に塗布膜がゲル状態であり、流動性を有していることがある。このような状態では、ドメインの形成反応がより効果的に進み、大きなドメインが早期に形成されるため、好ましい。 Also, by increasing the rate of temperature increase from 80 ° C. to 125 ° C., the coating film may be in a gel state and have fluidity when the temperature reaches 120 ° C. or higher. In such a state, the domain formation reaction proceeds more effectively, and a large domain is formed at an early stage, which is preferable.
 125℃から180℃までの昇温レートは、0.1℃~7℃/分であることが好ましい。この温度域の昇温レートによって、波長変換シートを形成する硬化物の不均一ドメインサイズを制御することができる。例えば、昇温レートが0.1℃/分であれば、架橋点がより密である領域が形成される反応が生じやすいため、波長変換シートを形成する硬化物の不均一ドメインサイズΞを100Å以上とすることができる。また、例えば、昇温レートが5.5℃/分であれば、架橋点がより密である領域が形成される反応が完了する前に、硬化反応が完了するため、波長変換シートを形成する硬化物の不均一ドメインサイズΞを50Å以上100Å未満とすることができる。 The temperature rising rate from 125 ° C. to 180 ° C. is preferably 0.1 ° C. to 7 ° C./min. The nonuniform domain size of the cured product forming the wavelength conversion sheet can be controlled by the temperature increase rate in this temperature range. For example, when the rate of temperature rise is 0.1 ° C./min, a reaction in which a region having a denser crosslinking point is formed is likely to occur. Therefore, the non-uniform domain size の of the cured product forming the wavelength conversion sheet is 100 Å. This can be done. For example, if the temperature rising rate is 5.5 ° C./minute, the curing reaction is completed before the reaction for forming the region where the cross-linking points are denser is completed, and thus the wavelength conversion sheet is formed. The non-uniform domain size wrinkle of the cured product can be 50 mm or more and less than 100 mm.
 150℃以上の温度領域で30分間以上保持することが好ましい。この温度領域において保持する時間を十分に確保することで、波長変換シートを形成する硬化物の不均一ドメインサイズがより大きくなり、不均一ドメインサイズが大きい状態で固定化される。 It is preferable to hold for 30 minutes or more in a temperature range of 150 ° C. or higher. By sufficiently securing the time for holding in this temperature region, the non-uniform domain size of the cured product forming the wavelength conversion sheet becomes larger and the non-uniform domain size is fixed in a large state.
 本実施形態の波長変換シートは、本実施形態の硬化物を形成材料とするため、高硬度と高いクラック耐性と高い耐熱性とを兼ね備え、信頼性が高いものとなる。 Since the wavelength conversion sheet of this embodiment uses the cured product of this embodiment as a forming material, it has high hardness, high crack resistance, and high heat resistance, and has high reliability.
<発光装置>
 図3は、本実施形態の発光装置を示す模式図である。発光装置100は、上述した波長変換シート30と、光源60とを有している。
<Light emitting device>
FIG. 3 is a schematic view showing the light emitting device of this embodiment. The light emitting device 100 includes the wavelength conversion sheet 30 and the light source 60 described above.
 光源60としては、水銀ランプ、半導体発光素子等の公知の光源を用いることができる。本実施形態の発光装置には、高輝度LED、半導体レーザー等の高密度のエネルギーを照射する光源、UV-LED等の波長が400nm以下、300nm以下の高エネルギーの紫外線を発する光源を用いることが適している。光源60は、基板70と、基板70の一面に設けられた発光素子80とを有している。 As the light source 60, a known light source such as a mercury lamp or a semiconductor light emitting element can be used. In the light emitting device of the present embodiment, a light source that emits high-density energy such as a high-intensity LED or a semiconductor laser, or a light source that emits high-energy ultraviolet light having a wavelength of 400 nm or less and 300 nm or less is used. Is suitable. The light source 60 includes a substrate 70 and a light emitting element 80 provided on one surface of the substrate 70.
 波長変換シート30は、光源60から射出される光L1が入射する位置に配置されている。 The wavelength conversion sheet 30 is disposed at a position where the light L1 emitted from the light source 60 is incident.
 このような発光装置100においては、光源60から射出された光L1が波長変換シート30に入射する。波長変換シート30においては、波長変換材料であるフィラー50が、光L1を、光L1とは波長の異なる変換光L2に変換する。変換光L2は波長変換シート30から射出される。 In such a light emitting device 100, the light L1 emitted from the light source 60 enters the wavelength conversion sheet 30. In the wavelength conversion sheet 30, the filler 50, which is a wavelength conversion material, converts the light L1 into converted light L2 having a wavelength different from that of the light L1. The converted light L2 is emitted from the wavelength conversion sheet 30.
 図4は、本実施形態の波長変換シートを備えた発光装置の構造を示す断面図である。
 発光装置1000は、基板110と、半導体レーザー素子(光源)120と、導光部130と、波長変換シート140と、反射鏡150とを有している。波長変換シート140は、上述した構成のものを用いることができる。
FIG. 4 is a cross-sectional view showing the structure of a light emitting device provided with the wavelength conversion sheet of the present embodiment.
The light emitting device 1000 includes a substrate 110, a semiconductor laser element (light source) 120, a light guide unit 130, a wavelength conversion sheet 140, and a reflecting mirror 150. The wavelength conversion sheet 140 can be configured as described above.
 半導体レーザー素子120は、基板110上に設定されている。 The semiconductor laser element 120 is set on the substrate 110.
 導光部130は、内部に半導体レーザー素子120から射出されたレーザー光Laが入射され、内部でレーザー光Laを導光する。導光部130の一端には半導体レーザー素子120が光学的に接続され、他端には波長変換シート140が光学的に接続されている。
導光部130は、一端側から他端側に向けて幅が漸減する錘状を呈しており、半導体レーザー素子120から射出されたレーザー光Laが波長変換シート140に集束する構成となっている。
The light guide unit 130 receives the laser beam La emitted from the semiconductor laser element 120 and guides the laser beam La therein. The semiconductor laser element 120 is optically connected to one end of the light guide unit 130, and the wavelength conversion sheet 140 is optically connected to the other end.
The light guide unit 130 has a weight shape in which the width gradually decreases from one end side to the other end side, and the laser light La emitted from the semiconductor laser element 120 is focused on the wavelength conversion sheet 140. .
 反射鏡150は、波長変換シート140の周囲に配置された椀状の部材であり、波長変換シート140に面する曲面が光反射面となっている。反射鏡150は、波長変換シート140から射出される光を装置前方(レーザー光Laの照射方向)に偏向する。 The reflecting mirror 150 is a bowl-shaped member disposed around the wavelength conversion sheet 140, and a curved surface facing the wavelength conversion sheet 140 is a light reflecting surface. The reflecting mirror 150 deflects the light emitted from the wavelength conversion sheet 140 toward the front of the apparatus (irradiation direction of the laser light La).
 波長変換シート140に照射されたレーザー光Laは、波長変換シート140が含有する波長変換材料により白色光Lbに変換され、発光装置1000から出力される。 The laser light La irradiated on the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140 and output from the light emitting device 1000.
 発光装置1000は、半導体レーザー素子120を1つ有しているが、2つ以上有していてもよい。 The light emitting device 1000 has one semiconductor laser element 120, but may have two or more.
 図5は、発光装置の変形例を示す断面図である。図5および以下の説明において、図4で説明した構成と同じ構成については、図4と共通する符号を付している。 FIG. 5 is a cross-sectional view showing a modification of the light emitting device. 5 and the following description, the same components as those described in FIG. 4 are denoted by the same reference numerals as those in FIG.
 発光装置1100は、複数の基板110と、複数の半導体レーザー素子(光源)120と、複数の光ファイバー180と、導光部130と、波長変換シート140と、反射鏡150と、透明支持体190とを有している。 The light emitting device 1100 includes a plurality of substrates 110, a plurality of semiconductor laser elements (light sources) 120, a plurality of optical fibers 180, a light guide unit 130, a wavelength conversion sheet 140, a reflecting mirror 150, and a transparent support 190. have.
 光ファイバー180は、内部に半導体レーザー素子120から射出されたレーザー光Laが入射され、内部でレーザー光Laを導光する。複数の光ファイバー180の一端にはそれぞれ半導体レーザー素子120が光学的に接続されている。また、複数の光ファイバー180は他端側で束ねられており、一束にまとめられた状態で他端において導光部130に光学的に接続されている。
 導光部130は、内部に半導体レーザー素子120から射出されたレーザー光Laが入射され、内部でレーザー光Laを導光した後、装置前方に向けて射出する。導光部130は、装置前方に射出するレーザー光Laを集光する機能を有していてもよい。
The optical fiber 180 receives the laser beam La emitted from the semiconductor laser element 120 and guides the laser beam La therein. A semiconductor laser element 120 is optically connected to one end of each of the plurality of optical fibers 180. The plurality of optical fibers 180 are bundled on the other end side, and are optically connected to the light guide unit 130 at the other end in a bundled state.
The light guide unit 130 receives the laser beam La emitted from the semiconductor laser element 120 therein, guides the laser beam La therein, and then emits the laser beam La toward the front of the apparatus. The light guide unit 130 may have a function of condensing the laser light La emitted to the front of the apparatus.
 波長変換シート140は、透明支持体190に支持された状態で、導光部130と離間し導光部130に対向して配置されている。透明支持体190は、反射鏡150の開口部分を覆うようにして装置前方に設けられている。透明支持体190は、装置使用中に発生する熱により劣化しない透明材料を形成材料とする部材であり、例えば、ガラス板を用いることができる。 The wavelength conversion sheet 140 is disposed so as to be separated from the light guide unit 130 and opposed to the light guide unit 130 while being supported by the transparent support 190. The transparent support 190 is provided in front of the apparatus so as to cover the opening of the reflecting mirror 150. The transparent support 190 is a member made of a transparent material that does not deteriorate due to heat generated during use of the apparatus, and for example, a glass plate can be used.
 波長変換シート140に照射されたレーザー光Laは、波長変換シート140が含有する波長変換材料により白色光Lbに変換され、発光装置1100から出力される。 The laser light La irradiated on the wavelength conversion sheet 140 is converted into white light Lb by the wavelength conversion material contained in the wavelength conversion sheet 140 and is output from the light emitting device 1100.
 発光装置1000、1100においては、上述したように光源(半導体レーザー素子120)および発光部(波長変換シート140)が分離されている。これにより、発光装置の小型化や、デザイン性を向上させることが容易になる。 In the light emitting devices 1000 and 1100, as described above, the light source (semiconductor laser element 120) and the light emitting unit (wavelength conversion sheet 140) are separated. Thereby, it becomes easy to reduce the size and improve the design of the light emitting device.
 以上のような構成の発光装置は、高硬度と高いクラック耐性と高い耐熱性とを兼ね備えた本実施形態の波長変換シートを備えるため、信頼性が高いものとなる。 Since the light emitting device having the above-described configuration includes the wavelength conversion sheet of the present embodiment having both high hardness, high crack resistance, and high heat resistance, the light emitting device has high reliability.
<封止用部材、半導体発光装置>
 図6は、本実施形態の半導体発光装置200の断面図である。本実施形態の半導体発光装置は、図3~5における発光装置の光源としても使用可能である。
<Sealant, semiconductor light emitting device>
FIG. 6 is a cross-sectional view of the semiconductor light emitting device 200 of this embodiment. The semiconductor light emitting device of this embodiment can also be used as a light source of the light emitting device in FIGS.
 半導体発光装置200は、基板210と、基板上に配置された半導体発光素子220と、半導体発光素子220を封止する封止用部材230とを有している。封止用部材230は、上述した硬化物を形成材料とする。半導体発光素子220は、基板210と封止用部材230とによって覆われて、密封されており、外気から隔離されている。 The semiconductor light emitting device 200 includes a substrate 210, a semiconductor light emitting element 220 disposed on the substrate, and a sealing member 230 that seals the semiconductor light emitting element 220. The sealing member 230 uses the above-described cured product as a forming material. The semiconductor light emitting element 220 is covered and sealed by the substrate 210 and the sealing member 230 and is isolated from the outside air.
 封止用部材230を構成する硬化物は、上述のように高硬度と高いクラック耐性と高い耐熱性とを兼ね備えている。また、石英ガラスによって構成された封止部と比べて、UV光の透過性は同等であり、光の取出し効率が高く安価である。そのため、本実施形態の封止用部材230を有する半導体発光装置は、破損しにくく、信頼性が高いものとなる。 The cured product constituting the sealing member 230 has both high hardness, high crack resistance, and high heat resistance as described above. Moreover, compared with the sealing part comprised with quartz glass, the transmittance | permeability of UV light is equivalent, and the extraction efficiency of light is high and cheap. Therefore, the semiconductor light emitting device having the sealing member 230 of the present embodiment is not easily damaged and has high reliability.
 また、封止用部材230を構成する硬化物は、縮合型シリコーン樹脂硬化物を構成要素とするため、UV光により劣化しにくい。そのため、本実施形態の封止用部材230を有する半導体発光装置200は、光源である半導体発光素子220が、発光波長が400nm以下、さらには300nm以下であるUV光源であったとしても、劣化しにくく信頼性が高いものとなる。 Moreover, since the cured product constituting the sealing member 230 includes a condensed silicone resin cured product as a constituent element, the cured product is hardly deteriorated by UV light. Therefore, the semiconductor light emitting device 200 having the sealing member 230 of the present embodiment is deteriorated even if the semiconductor light emitting element 220 that is a light source is a UV light source having an emission wavelength of 400 nm or less, and further 300 nm or less. It is difficult and reliable.
 半導体発光素子220としては、UV光を射出するものに限らない。半導体発光素子220の発光波長は、紫外線領域(例えば10~400nm)であってもよいし、可視光領域(例えば400nm超830nm未満)であってもよいし、赤外線領域(例えば830nm以上1000nm以下)であってもよい。 The semiconductor light emitting element 220 is not limited to one that emits UV light. The emission wavelength of the semiconductor light emitting device 220 may be in the ultraviolet region (for example, 10 to 400 nm), in the visible light region (for example, more than 400 nm and less than 830 nm), or in the infrared region (for example, 830 nm to 1000 nm). It may be.
 以上のような構成の封止用部材は、上述した本実施形態の硬化物を形成材料とするため、信頼性が高いものとなる。
 また、以上のような構成の半導体発光装置は、上述した本実施形態の硬化物を形成材料とする封止用部材を有するため、信頼性が高いものとなる。
Since the sealing member having the above-described configuration uses the above-described cured product of the present embodiment as a forming material, the sealing member has high reliability.
Moreover, since the semiconductor light-emitting device having the above configuration includes a sealing member that uses the cured product of the present embodiment described above as a forming material, the reliability is high.
 図面1~6を用いて本発明の好適な実施形態について説明したが、本発明の実施形態はこれらの例に限定されるものではない。上述した例において示した各構成部材の諸形状、組み合わせ等は、設計要求等に基づき種々変更可能である。 Although the preferred embodiments of the present invention have been described using the drawings 1 to 6, the embodiments of the present invention are not limited to these examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples can be variously changed based on design requirements and the like.
 以下、本発明を実施例により具体的に説明するが、本発明は以下の実施例に限定されるものではない。 Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to the following examples.
 本実施例においては、得られた試料を下記方法で評価または測定した。 In this example, the obtained sample was evaluated or measured by the following method.
<耐クラック性>
 直径4cmのアルミニウム製カップに、1.2gのシリコーン樹脂組成物を加え、硬化させた。得られた硬化物について、クラックの有無を目視評価した。
<Crack resistance>
1.2 g of the silicone resin composition was added to an aluminum cup having a diameter of 4 cm and cured. About the obtained hardened | cured material, the presence or absence of the crack was visually evaluated.
<強度>
 幅10mm、長さ30mm、厚み1mmの試験片を作製し、下記条件で試験片の中央に2.0mm/秒の速度で荷重を加え、試験片が折れたときの荷重および破壊変位を測定した。試験数(n数)を5とし、算術平均値を測定結果とした。

装置名      :卓上精密荷重測定器 MODEL-1605IIVL
ロードセル    :MODEL-3000シリーズ
測定温度     :25℃
<Strength>
A test piece having a width of 10 mm, a length of 30 mm, and a thickness of 1 mm was prepared. A load was applied to the center of the test piece at a speed of 2.0 mm / sec under the following conditions, and the load and fracture displacement when the test piece was broken were measured. . The number of tests (number n) was set to 5, and the arithmetic average value was taken as the measurement result.

Device name: Desktop precision load measuring device MODEL-1605IIVL
Load cell: MODEL-3000 series Measurement temperature: 25 ° C
 試験片が折れたときの荷重(曲げ破壊荷重、単位N)の平均値を、曲げ強度とした。曲げ強度が20MPa以上であった試験片を良好とした。 The average value of the load (bending fracture load, unit N) when the test piece was broken was defined as the bending strength. A specimen having a bending strength of 20 MPa or more was considered good.
 試験片が折れたときの破壊変位(破壊時たわみ量、単位mm)の平均値を、破断時のひずみとした。破断時のひずみが3.0%以上であった試験片を良好とした。 The average value of the fracture displacement (amount of deflection at break, unit mm) when the test piece was broken was defined as the strain at break. A specimen having a strain at break of 3.0% or more was regarded as good.
<耐熱性>
 縮合型シリコーン樹脂硬化物(直径4cm、厚み500μmの円板状)を250℃のオーブン中で加熱した。加熱前後の縮合型シリコーン樹脂の硬化物について、波長400nmにおける光透過率および外観(しわ、クラックの有無)を評価した。
<Heat resistance>
A condensed silicone resin cured product (a disk shape having a diameter of 4 cm and a thickness of 500 μm) was heated in an oven at 250 ° C. About the hardened | cured material of the condensation type silicone resin before and behind a heating, the light transmittance in wavelength 400nm and external appearance (wrinkle, the presence or absence of a crack) were evaluated.
<ショア硬度>
 縮合型シリコーン樹脂硬化物(直径4cm、厚み1500μmの円板状)について、下記条件でショアD硬度を測定した。
<Shore hardness>
The Shore D hardness of the cured silicone resin cured product (diameter 4 cm, thickness 1500 μm) was measured under the following conditions.
 デュロメータ用自動低圧荷重器(株式会社テクロック製、型番GS-610)に、デュロメータ(株式会社テクロック製、型番GS-720G、タイプD)を装着したものを測定装置とした。なお、デュロメータは、ゴム・プラスチック硬度計である。この測定装置を用いて、縮合型シリコーン樹脂の硬化物について、1mm/秒の下降スピードでショアD硬度を測定した。測定は5箇所で実施し、平均値を算出した。 A durometer (manufactured by Teclock Co., Ltd., model number GS-720G, type D) mounted on an automatic low-pressure loader for durometer (manufactured by Teclock Co., Ltd., model number GS-610) was used as a measuring device. The durometer is a rubber / plastic hardness meter. Using this measuring apparatus, the Shore D hardness of the cured silicone resin was measured at a descending speed of 1 mm / second. Measurement was carried out at five locations, and the average value was calculated.
 ショアD硬度が70以上であった縮合型シリコーン樹脂の硬化物を、良好とした。 A cured product of a condensation type silicone resin having a Shore D hardness of 70 or more was considered good.
<透過率>
 500μm厚の硬化物を作製した。得られた硬化物について、下記条件で400nmの波長の光に対する透過率を測定した。

装置名     :JASCO V-670 紫外可視近赤分光光度計
         積分球ユニット(ISN-723/B004861118)
 走査速度(C)   :1000nm/分
 測定波長      :200~800nm
 データ取込間隔(L):1.0nm
<Transmissivity>
A cured product having a thickness of 500 μm was prepared. About the obtained hardened | cured material, the transmittance | permeability with respect to the light of a wavelength of 400 nm was measured on condition of the following.

Device name: JASCO V-670 UV-visible near-red spectrophotometer Integrating sphere unit (ISN-723 / B004861118)
Scanning speed (C): 1000 nm / min Measurement wavelength: 200 to 800 nm
Data capture interval (L): 1.0 nm
 透過率が85%以上であった硬化物を、良好とした。 A cured product having a transmittance of 85% or more was considered good.
<ゲルパーメーションクロマトグラフィー(GPC)測定>
 試料(シリコーン樹脂)を溶離液に溶解させた後、ポアサイズ0.45μmのメンブランフィルターでろ過することにより、測定溶液を調製した。得られた調製溶液について、下記条件で標準ポリスチレン換算の重量平均分子量(Mw)を測定した。

 装置名  :東ソー社製HLC-8220 GPC
 カラム  :TSKgel SuperHM-H×2+SuperH2500×1(内径6.0mm×150mm×3本)
 溶離液  :トルエン
 流量   :0.6mL/分
 検出器  :RI検出器(ポラリティー:-)
 カラム温度:40℃
 注入量  :40μL
 分子量標準:標準ポリスチレン
<Gel permeation chromatography (GPC) measurement>
A sample (silicone resin) was dissolved in the eluent and then filtered through a membrane filter having a pore size of 0.45 μm to prepare a measurement solution. About the obtained preparation solution, the weight average molecular weight (Mw) of standard polystyrene conversion was measured on condition of the following.

Device name: HLC-8220 GPC manufactured by Tosoh Corporation
Column: TSKgel SuperHM-H × 2 + SuperH2500 × 1 (inner diameter 6.0 mm × 150 mm × 3)
Eluent: Toluene Flow rate: 0.6 mL / min Detector: RI detector (Polarity:-)
Column temperature: 40 ° C
Injection volume: 40 μL
Molecular weight standard: Standard polystyrene
<固体29Si-NMR>
 硬化物を作製し、得られた硬化物について、下記条件でT体のケイ素原子に帰属されるピークを測定した。具体的には、-80ppmから-40ppmの領域内のピークをT体のケイ素原子に帰属されるピークとし、上記領域における有無を確認した。

装置名      :Bruker社製 AVANCE300
観測核      :29Si
観測周波数    :59.6MHz
測定温度     :室温
測定法      :DDMAS法
基準物質     :ヘキサメチルシクロトリシロキサン
          (-9.66ppmに設定、TMS0ppm設定に相当)
MAS条件    :3.5kHz
パルス幅     :π/6(1.4μs)
待ち時間     :20.0sec
積算回数     :4096回
試料量      :290mg
<Solid 29 Si-NMR>
A cured product was prepared, and for the obtained cured product, the peak attributed to the silicon atom of the T-form was measured under the following conditions. Specifically, the peak in the region from −80 ppm to −40 ppm was regarded as the peak attributed to the silicon atom of T-form, and the presence or absence in the above region was confirmed.

Device name: AVANCE300 manufactured by Bruker
Observation nucleus: 29Si
Observation frequency: 59.6 MHz
Measurement temperature: Room temperature measurement method: DDDMA method reference material: Hexamethylcyclotrisiloxane (set to -9.66 ppm, equivalent to TMS 0 ppm setting)
MAS condition: 3.5 kHz
Pulse width: π / 6 (1.4 μs)
Waiting time: 20.0 sec
Integration number: 4096 times Sample amount: 290 mg
<不均一ドメインサイズΞ>
(測定条件)
測定装置     :小角X線散乱装置(NanoSTAR、ブルカー・エイエックスエス株式会社製)
光源       :Cuターゲットの回転対陰極型のX線発生器。出力50kV、100mA。クロスカップルド・ゲーベルミラーと3つのピンホールスリット使用(スリットの孔径はX線発生器側から500μmφ、150μmφ、500μmφ)
二次元検出器   :2次元Multi Wire検出器、Hi-STAR
装置内の真空度:40Pa
 解析ソフト   :SAXS Ver.4.1.29(ブルカー・エイエックスエス社製)
<Non-uniform domain size>
(Measurement condition)
Measuring device: Small-angle X-ray scattering device (NanoSTAR, Bruker AXS Co., Ltd.)
Light source: Rotating anti-cathode type X-ray generator of Cu target. Output 50kV, 100mA. Uses a cross-coupled gobel mirror and three pinhole slits (slit diameters are 500 μmφ, 150 μmφ, 500 μmφ from the X-ray generator)
Two-dimensional detector: Two-dimensional multi wire detector, Hi-STAR
Degree of vacuum in the device: 40 Pa
Analysis software: SAXS Ver. 4.1.29 (Bruker AXS)
 まず、冷凍粉砕機を用いてシリコーン硬化物を粉砕した。冷凍粉砕機としては、日本興業株式会社製のJFC-300を用いた。シリコーン硬化物を液体窒素中で10分間静置した後、15分間粉砕を行った。図7は、粉砕後のシリコーン硬化物のSEM写真である。 First, the silicone cured product was pulverized using a freeze pulverizer. As the freeze pulverizer, JFC-300 manufactured by Nippon Kogyo Co., Ltd. was used. The silicone cured product was allowed to stand in liquid nitrogen for 10 minutes and then pulverized for 15 minutes. FIG. 7 is an SEM photograph of the cured silicone after pulverization.
 次に、得られた粉砕物10質量部に対して、テトラヒドロフラン90質量部を加え、24時間静置した。得られた膨潤サンプルを石英セルに投入し、小角X線解析を行った。 Next, 90 parts by mass of tetrahydrofuran was added to 10 parts by mass of the obtained pulverized product and allowed to stand for 24 hours. The obtained swollen sample was put into a quartz cell and small-angle X-ray analysis was performed.
 膨潤サンプル(試料)に対しX線を照射して、膨潤サンプルの小角X線散乱を測定した。膨潤サンプルから検知器までの長さは106cmとし、ダイレクトビームストッパーの大きさは2mmφとした。 The swollen sample (sample) was irradiated with X-rays, and the small-angle X-ray scattering of the swollen sample was measured. The length from the swollen sample to the detector was 106 cm, and the size of the direct beam stopper was 2 mmφ.
 散乱角2θとダイレクトビーム位置の校正は、例えば、ベヘン酸銀の1次(2θ=1.513°)と2次(2θ=3.027°)のそれぞれのピークを用いて行った。測定可能な散乱角2θの範囲は、0.08~3°であった。 The calibration of the scattering angle 2θ and the direct beam position was performed using, for example, the primary (2θ = 1.513 °) and secondary (2θ = 3.027 °) peaks of silver behenate. The range of measurable scattering angle 2θ was 0.08 to 3 °.
 測定結果を、ブルカー・エイエックスエス社製の解析ソフト(SAXS Ver.4.1.29)を用いて解析し、小角X線小角散乱スペクトルを得た。
 また、膨潤サンプルを投入していない石英セルを用いたブランク測定についても、上記と同様に行った。
The measurement result was analyzed using analysis software (SAXS Ver. 4.1.29) manufactured by Bruker AXS, and a small-angle X-ray small-angle scattering spectrum was obtained.
In addition, blank measurement using a quartz cell into which no swollen sample was added was performed in the same manner as described above.
 それぞれの測定で得られた測定値を用いて、膨潤サンプルの小角X線散乱の測定で用いるX線の波数を横軸とし、膨潤サンプルの小角X線散乱で測定された測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、膨潤サンプルの小角X線散乱の測定値をプロットしたグラフを作成した。得られたグラフについて、上記式(A)でフィッティングすることで、不均一ドメインサイズΞを得た。
 フィッティングの範囲は、q=0.022Å-1~0.13Å-1の範囲で行った。
 フィッティングの初期値は、1Å<ξ<50Å、1Å<Ξ<250Åとした。
Using the measured values obtained in each measurement, the horizontal axis represents the wave number of X-rays used in the measurement of small-angle X-ray scattering of the swollen sample, and blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the swollen sample A graph in which the measured values of small-angle X-ray scattering of the swollen sample were plotted with the scattering intensity obtained by subtracting the ordinate as the vertical axis was prepared. By fitting the obtained graph with the above formula (A), a heterogeneous domain size wrinkle was obtained.
The fitting range was q = 0.022Å −1 to 0.13Å −1 .
The initial values of the fitting were 1Å <ξ <50Å and 1Å <Ξ <250Å.
[実施例1]
 下記のシリコーン樹脂A(Mw=3500)、低分子シリコーン(Mw<1000)およびアルコキシシリコーンオリゴマー(改質用シリコーン、Mw=3400)は、いずれも、「縮合型シリコーン樹脂」である。アルコキシシリコーンオリゴマーは、本明細書における「オリゴマーB」に該当する。低分子シリコーンは、本明細書における「オリゴマーC」に該当する。
[Example 1]
The following silicone resin A (Mw = 3500), low molecular silicone (Mw <1000) and alkoxysilicone oligomer (modifying silicone, Mw = 3400) are all “condensation type silicone resins”. The alkoxysilicone oligomer corresponds to “oligomer B” in the present specification. The low molecular silicone corresponds to “oligomer C” in the present specification.
 アルコキシシリコーンオリゴマーは、重量平均分子量7500以上の領域に存在するピークの面積の総和が、ピークの全面積の総和に対して、20%以上であり、重量平均分子量1000以下の領域に存在するピークの面積の総和が、ピークの全面積の総和に対して、30%以上であった。 In the alkoxysilicone oligomer, the sum of the peak areas existing in a region having a weight average molecular weight of 7500 or more is 20% or more of the total peak area, and the peak existing in a region having a weight average molecular weight of 1000 or less. The total area was 30% or more with respect to the total peak area.
 シリコーン樹脂Aに含まれる構造単位を表1に示す。低分子シリコーンに含まれる構造単位を表2に示す。アルコキシシリコーンオリゴマーは、表3に示される構造単位から構成される樹脂を95%以上含んでいた。 The structural units contained in the silicone resin A are shown in Table 1. Table 2 shows the structural units contained in the low molecular silicone. The alkoxysilicone oligomer contained 95% or more of a resin composed of the structural units shown in Table 3.
 (シリコーン樹脂A) (Silicone resin A)
Figure JPOXMLDOC01-appb-T000011
Figure JPOXMLDOC01-appb-T000011
 (低分子シリコーン) (Low molecular silicone)
Figure JPOXMLDOC01-appb-T000012
Figure JPOXMLDOC01-appb-T000012
 (アルコキシシリコーンオリゴマー) (Alkoxy silicone oligomer)
Figure JPOXMLDOC01-appb-T000013
Figure JPOXMLDOC01-appb-T000013
 表1~3に示される各縮合型シリコーン樹脂の構造単位の存在比率は、下記条件で測定された溶液NMRの測定結果に基づいて算出した値である。 The abundance ratio of the structural units of each condensation type silicone resin shown in Tables 1 to 3 is a value calculated based on the measurement result of solution NMR measured under the following conditions.
H-NMR測定条件>
装置名          :JEOL RESONANCE社製 ECA-500
観測核          :
観測周波数        :500.16MHz
測定温度         :室温
測定溶媒         :DMSO-d
パルス幅         :6.60μsec(45°)
パルス繰り返し時間    :7.0sec
積算回数         :16回
試料濃度(試料/測定溶媒):300mg/0.6ml
<1 H-NMR measurement conditions>
Device name: ECA-500 manufactured by JEOL RESONANCE
Observation nucleus: 1 H
Observation frequency: 500.16 MHz
Measurement temperature: Room temperature Measurement solvent: DMSO-d 6
Pulse width: 6.60 μsec (45 °)
Pulse repetition time: 7.0 sec
Integration count: 16 times Sample concentration (sample / measuring solvent): 300 mg / 0.6 ml
29Si-NMR測定条件>
装置名          :Agilent社製 400-MR
観測核          :29Si
観測周波数        :79.42MHz
測定温度         :室温
測定溶媒         :CDCl
パルス幅         :8.40μsec(45°)
パルス繰り返し時間    :15.0sec
積算回数         :4000回
試料濃度(試料/測定溶媒):300mg/0.6ml
<29 Si-NMR measurement conditions>
Device name: 400-MR manufactured by Agilent
Observation nucleus: 29 Si
Observation frequency: 79.42 MHz
Measurement temperature: room temperature measurement solvent: CDCl 3
Pulse width: 8.40 μsec (45 °)
Pulse repetition time: 15.0 sec
Integration count: 4000 times Sample concentration (sample / measuring solvent): 300 mg / 0.6 ml
 オイルバス内に設置したフラスコ内に、789.60gのシリコーン樹脂Aと、96.00gの酢酸プロピルと、314.40gのイソプロピルアルコールとを加え、80℃で攪拌することにより、シリコーン樹脂Aを溶媒に溶解させた。
 得られた溶液に、8.47gの低分子シリコーンと、75.08gのアルコキシシリコーンオリゴマーとを加え、1時間以上攪拌することにより、低分子シリコーンおよびアルコキシシリコーンオリゴマーを溶媒に溶解させた。
 得られた溶液に、274.49gの酢酸2-ブトキシエチルと、0.22gの3-グリシドキシプロピルトリメトキシシラン(シランカップリング剤)とを加えた。
In a flask placed in an oil bath, 789.60 g of silicone resin A, 96.00 g of propyl acetate, and 314.40 g of isopropyl alcohol are added and stirred at 80 ° C. Dissolved in.
To the obtained solution, 8.47 g of low molecular silicone and 75.08 g of alkoxysilicone oligomer were added and stirred for 1 hour or longer to dissolve the low molecular silicone and alkoxysilicone oligomer in the solvent.
To the resulting solution, 274.49 g of 2-butoxyethyl acetate and 0.22 g of 3-glycidoxypropyltrimethoxysilane (silane coupling agent) were added.
 得られた混合物をエバポレーターにセットし、当該混合物の温度を85℃、エバポレーターの減圧度を2.0kPaの条件とした後、当該混合物中の酢酸プロピルおよびイソプロピルアルコールの合計濃度が1質量%以下になるまで、酢酸プロピルおよびイソプロピルアルコールを留去した。 The obtained mixture is set in an evaporator, the temperature of the mixture is 85 ° C., and the degree of vacuum of the evaporator is 2.0 kPa. Then, the total concentration of propyl acetate and isopropyl alcohol in the mixture is 1% by mass or less. Until then, propyl acetate and isopropyl alcohol were distilled off.
 得られた混合物100質量部に対して、硬化用触媒(リン酸を15質量%含有する)を2質量部添加した後、十分撹拌することにより、シリコーン樹脂組成物を得た。 After adding 2 parts by mass of a curing catalyst (containing 15% by mass of phosphoric acid) to 100 parts by mass of the obtained mixture, a silicone resin composition was obtained by sufficiently stirring.
 得られたシリコーン樹脂組成物を、室温(25℃)から80℃、125℃、180℃に段階的に加熱し、80℃で30分間保持、125℃で30分間保持、180℃で60分間保持することで硬化させるステップキュアを実施した。具体的には、室温(25℃)から1.4℃/分で80℃まで昇温させ、80℃で30分間保持した。次いで、4.5℃/分で125℃まで昇温させ、125℃で30分間保持した。次いで、5.5℃/分で180℃まで昇温させ、180℃で60分間保持した。
 その後、100分間かけて180℃から25℃まで放冷させることで、硬化物を得た。
The obtained silicone resin composition is heated stepwise from room temperature (25 ° C.) to 80 ° C., 125 ° C. and 180 ° C., held at 80 ° C. for 30 minutes, held at 125 ° C. for 30 minutes, and held at 180 ° C. for 60 minutes. The step cure which hardens by doing was implemented. Specifically, the temperature was raised from room temperature (25 ° C.) to 80 ° C. at 1.4 ° C./min and held at 80 ° C. for 30 minutes. Subsequently, it heated up to 125 degreeC at 4.5 degreeC / min, and hold | maintained at 125 degreeC for 30 minutes. Next, the temperature was raised to 180 ° C. at 5.5 ° C./min and held at 180 ° C. for 60 minutes.
Then, the hardened | cured material was obtained by allowing it to cool from 180 degreeC to 25 degreeC over 100 minutes.
 得られた硬化物の固体29Si-NMR測定において、T体のケイ素原子に帰属されるピークが確認された。 In the solid 29 Si-NMR measurement of the obtained cured product, a peak attributed to the silicon atom of T-form was confirmed.
 得られた硬化物について、SAXS測定の結果からSAXSプロファイルを作成した。SAXSプロファイルを図8に示す。図8において、横軸Qは、小角X線散乱の測定で用いるX線の波数(単位:Å-1)を示している。縦軸Iは、縮合型シリコーン樹脂硬化物の小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を示している。作成されたSAXSプロファイルより、不均一ドメインサイズΞは74Åであることを確認した。 About the obtained hardened | cured material, the SAXS profile was created from the result of the SAXS measurement. The SAXS profile is shown in FIG. In FIG. 8, the horizontal axis Q indicates the wave number (unit: Å -1 ) of X-rays used in the measurement of small-angle X-ray scattering. The vertical axis I indicates the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering of the cured silicone resin cured product. From the created SAXS profile, it was confirmed that the heterogeneous domain size Ξ was 74 Å.
 得られた硬化物について、クラックは無く、耐クラック性は良好であった。
 得られた硬化物について、曲げ強度は35MPaであり、曲げ歪みは5%であり、強度は良好であった。
 得られた硬化物について、ショアD硬度は73であり、良好であった。
 得られた硬化物について、透過率は92%であり、良好であった。
About the obtained hardened | cured material, there were no cracks and the crack resistance was favorable.
About the obtained hardened | cured material, bending strength was 35 Mpa, bending distortion was 5%, and intensity | strength was favorable.
About the obtained hardened | cured material, Shore D hardness was 73 and was favorable.
About the obtained hardened | cured material, the transmittance | permeability was 92% and was favorable.
 得られた硬化物について、250℃、100時間の耐熱性試験を実施した。耐熱性試験後の硬化物の外観において、しわ、クラックの発生は認められなかった。また、耐熱試験後の硬化物の透過率は92%であり、透明性を維持した。 The obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
[実施例2]
 実施例1におけるシリコーン樹脂組成物の熱硬化条件について、125℃から180℃までの昇温レートを0.1℃/分としたこと以外は、実施例1と同様にて、硬化物を得た。
[Example 2]
About the thermosetting conditions of the silicone resin composition in Example 1, the hardened | cured material was obtained similarly to Example 1 except having made the temperature increase rate from 125 degreeC to 180 degreeC into 0.1 degree-C / min. .
 得られた硬化物の固体29Si-NMR測定において、T体のケイ素原子に帰属されるピークが確認された。 In the solid 29 Si-NMR measurement of the obtained cured product, a peak attributed to the silicon atom of T-form was confirmed.
 得られた硬化物について、SAXS測定の結果からSAXSプロファイルを作成した。作成されたSAXSプロファイルを図8に示す。作成されたSAXSプロファイルより、不均一ドメインサイズΞは134Åであることを確認した。 For the obtained cured product, a SAXS profile was created from the results of SAXS measurement. The created SAXS profile is shown in FIG. From the created SAXS profile, it was confirmed that the heterogeneous domain size Å was 134 Å.
 得られた硬化物について、クラックは無く、耐クラック性は良好であった。
 得られた硬化物について、曲げ強度は28MPaであり、曲げ歪みは5%であり、強度は良好であった。
 得られた硬化物について、ショアD硬度は76であり、良好であった。
 得られた硬化物について、透過率は92%であり、良好であった。
About the obtained hardened | cured material, there were no cracks and the crack resistance was favorable.
About the obtained hardened | cured material, bending strength was 28 Mpa, bending distortion was 5%, and intensity | strength was favorable.
About the obtained hardened | cured material, Shore D hardness was 76 and was favorable.
About the obtained hardened | cured material, the transmittance | permeability was 92% and was favorable.
 得られた硬化物について、250℃、100時間の耐熱性試験を実施した。耐熱性試験後の硬化物の外観において、しわ、クラックの発生は認められなかった。また、耐熱性試験後の硬化物の透過率は92%であり、透明性を維持した。 The obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
[実施例3]
 下記のシリコーン樹脂B(Mw=3500)に含まれる構造単位を表4に示す。表4に示されるシリコーン樹脂Bの構造単位の存在比率は、上述の溶液NMRの測定結果に基づいて算出した値である。シリコーン樹脂Bは、本明細書における「縮合型シリコーン樹脂」に該当する。
[Example 3]
Table 4 shows structural units contained in the following silicone resin B (Mw = 3500). The abundance ratio of the structural unit of the silicone resin B shown in Table 4 is a value calculated based on the measurement result of the solution NMR described above. Silicone resin B corresponds to “condensation type silicone resin” in the present specification.
 (シリコーン樹脂B) (Silicone resin B)
Figure JPOXMLDOC01-appb-T000014
Figure JPOXMLDOC01-appb-T000014
 フラスコ内に、シリコーン樹脂80質量部と、酢酸2-ブトキシエチル20質量部とを加え、攪拌して混合物を得た。その後、得られた混合物100質量部に対して、硬化用触媒(リン酸を15質量%含有する)を2質量部加え、十分撹拌することにより、シリコーン樹脂組成物を得た。 In the flask, 80 parts by mass of a silicone resin and 20 parts by mass of 2-butoxyethyl acetate were added and stirred to obtain a mixture. Thereafter, 2 parts by mass of a curing catalyst (containing 15% by mass of phosphoric acid) was added to 100 parts by mass of the obtained mixture, and the mixture was sufficiently stirred to obtain a silicone resin composition.
 得られたシリコーン樹脂組成物を、実施例2におけるシリコーン樹脂組成物の熱硬化条件と同じ条件で熱硬化させることにより、硬化物を得た。 The obtained silicone resin composition was thermally cured under the same conditions as the silicone resin composition in Example 2 to obtain a cured product.
 得られた硬化物の固体29Si-NMR測定において、T体のケイ素原子に帰属されるピークが確認された。 In the solid 29 Si-NMR measurement of the obtained cured product, a peak attributed to the silicon atom of T-form was confirmed.
 得られた硬化物について、SAXS測定の結果からSAXSプロファイルを作成した。作成されたSAXSプロファイルより、不均一ドメインサイズΞは213Åであることを確認した。 For the obtained cured product, a SAXS profile was created from the results of SAXS measurement. From the created SAXS profile, it was confirmed that the heterogeneous domain size Ξ was 213 Å.
 得られた硬化物について、クラックは無く、耐クラック性は良好であった。
 得られた硬化物について、曲げ強度は35MPaであり、曲げ歪みは5.0%であり、強度は良好であった。
 得られた硬化物について、ショアD硬度は74であり、良好であった。
 得られた硬化物について、透過率は92%であり、良好であった。
About the obtained hardened | cured material, there were no cracks and the crack resistance was favorable.
About the obtained hardened | cured material, bending strength was 35 Mpa, bending distortion was 5.0%, and intensity | strength was favorable.
About the obtained hardened | cured material, Shore D hardness was 74 and was favorable.
About the obtained hardened | cured material, the transmittance | permeability was 92% and was favorable.
 得られた硬化物について、250℃、100時間の耐熱性試験を実施した。耐熱性試験後の硬化物の外観において、しわ、クラックの発生は認められなかった。また、耐熱性試験後の硬化物の透過率は92%であり、透明性を維持した。 The obtained cured product was subjected to a heat resistance test at 250 ° C. for 100 hours. In the appearance of the cured product after the heat resistance test, wrinkles and cracks were not observed. Further, the transmittance of the cured product after the heat resistance test was 92%, and transparency was maintained.
[比較例1]
 シリコーン樹脂B80質量部と酢酸2-ブトキシエチル20質量部とを撹拌混合し、シリコーン樹脂組成物を得た。
[Comparative Example 1]
80 parts by mass of silicone resin B and 20 parts by mass of 2-butoxyethyl acetate were mixed with stirring to obtain a silicone resin composition.
 得られたシリコーン組成物組成物を、室温から150℃に加熱し、150℃で5時間保持することで、熱硬化させた。具体的には、25℃(室温)から3℃/分で40℃まで昇温させ、40℃で10分間保持した。次いで、4℃/分で150℃まで昇温させ、150℃で5時間保持した。その後、2時間かけて室温まで放冷させることで、硬化物を得た。 The obtained silicone composition composition was heated from room temperature to 150 ° C. and kept at 150 ° C. for 5 hours to be thermoset. Specifically, the temperature was raised from 25 ° C. (room temperature) to 40 ° C. at 3 ° C./min and held at 40 ° C. for 10 minutes. Next, the temperature was raised to 150 ° C. at 4 ° C./min and held at 150 ° C. for 5 hours. Then, the hardened | cured material was obtained by allowing to cool to room temperature over 2 hours.
 得られた硬化物の固体29Si-NMR測定において、T体のケイ素原子に帰属されるピークが確認された。 In the solid 29 Si-NMR measurement of the obtained cured product, a peak attributed to the silicon atom of T-form was confirmed.
 得られた硬化物について、SAXS測定の結果からSAXSプロファイルを作成した。作成されたSAXSプロファイルを図8に示す。作成されたSAXSプロファイルより、不均一ドメインサイズΞは36Åであることを確認した。 For the obtained cured product, a SAXS profile was created from the results of SAXS measurement. The created SAXS profile is shown in FIG. From the created SAXS profile, it was confirmed that the heterogeneous domain size Å was 36 Å.
 得られた硬化物について、クラックが有り、耐クラック性は不良であった。
 得られた硬化物は、曲げ強度、ショアD硬度および透過率が測定可能な大きさではなかった。
The obtained cured product had cracks and had poor crack resistance.
The obtained cured product was not large enough to measure the bending strength, Shore D hardness and transmittance.
 以上より、本発明の硬化物が有用であることが分かった。 From the above, it was found that the cured product of the present invention is useful.
 本発明によれば、高硬度と高いクラック耐性と高い耐熱性とを兼ね備えた硬化物を提供することができる。また、当該硬化物を形成材料とする波長変換シート、発光装置、封止用部材および半導体発光装置を提供することができる。 According to the present invention, a cured product having both high hardness, high crack resistance and high heat resistance can be provided. Moreover, the wavelength conversion sheet which uses the said hardened | cured material as a forming material, a light-emitting device, the member for sealing, and a semiconductor light-emitting device can be provided.
10…シリコーン樹脂、30…波長変換シート、40…重合体、50…フィラー、60…光源、70…基板、80…発光素子、100,1000,1100…発光装置、110…基板、120…半導体レーザー素子(光源)、130…導光部、140…波長変換シート、150…反射鏡、160…レーザー光、170…白色光、180…光ファイバー、190…透明支持体、200…半導体発光装置、210…基板、220…半導体発光素子、230…封止用部材230、L1…光、L2…変換光 DESCRIPTION OF SYMBOLS 10 ... Silicone resin, 30 ... Wavelength conversion sheet, 40 ... Polymer, 50 ... Filler, 60 ... Light source, 70 ... Substrate, 80 ... Light emitting element, 100, 1000, 1100 ... Light emitting device, 110 ... Substrate, 120 ... Semiconductor laser Element (light source) 130 ... light guide part 140 ... wavelength conversion sheet 150 ... reflecting mirror 160 ... laser light 170 ... white light 180 ... optical fiber 190 ... transparent support 200 ... semiconductor light emitting device 210 ... Substrate, 220 ... semiconductor light emitting element, 230 ... sealing member 230, L1 ... light, L2 ... converted light

Claims (13)

  1.  縮合型シリコーン樹脂硬化物を含み、下記(1)および(2)を満たす硬化物。

    (1)前記縮合型シリコーン樹脂硬化物の固体29Si-核磁気共鳴スペクトルにおいて、T体のケイ素原子に帰属されるピークが存在する。
    (ここで、T体のケイ素原子とは、3個の酸素原子と結合しているケイ素原子を意味する。)

    (2)下記の不均一ドメインサイズが50Å以上である。
    (ここで、不均一ドメインサイズとは、
     前記縮合型シリコーン樹脂硬化物をテトラヒドロフランに含浸させて膨潤させた試料の小角X線散乱の測定値を、
     小角X線散乱の測定で用いるX線の波数を横軸とし、小角X線散乱で測定される測定散乱強度からブランク散乱を減じた散乱強度を縦軸として、プロットすることにより得られるグラフを、
     下記式(A)でフィッティングすることにより得られる値である。)
    Figure JPOXMLDOC01-appb-M000001
    (ここで、ξは網目メッシュサイズを表し、Ξは不均一ドメインサイズを表し、I(q)は散乱強度を表し、qは波数を表し、AおよびBはフィッティング定数を表す。)
    A cured product containing a condensed silicone resin cured product and satisfying the following (1) and (2).

    (1) In the solid 29 Si-nuclear magnetic resonance spectrum of the cured silicone resin cured product, there is a peak attributed to the silicon atom of the T form.
    (Here, the silicon atom of the T form means a silicon atom bonded to three oxygen atoms.)

    (2) The following non-uniform domain size is 50 mm or more.
    (Here, non-uniform domain size means
    The measurement value of small-angle X-ray scattering of a sample obtained by impregnating tetrahydrofuran of the condensed silicone resin cured product with swelling,
    A graph obtained by plotting, with the horizontal axis representing the wave number of X-rays used in the measurement of small-angle X-ray scattering, and the vertical axis representing the scattering intensity obtained by subtracting blank scattering from the measured scattering intensity measured by small-angle X-ray scattering,
    It is a value obtained by fitting with the following formula (A). )
    Figure JPOXMLDOC01-appb-M000001
    (Where ξ represents the mesh size, Ξ represents the heterogeneous domain size, I (q) represents the scattering intensity, q represents the wave number, and A and B represent the fitting constants.)
  2.  前記縮合型シリコーン樹脂硬化物に含まれる全ケイ素原子に対する前記T体のケイ素原子の割合が、50モル%以上である、請求項1に記載の硬化物。 2. The cured product according to claim 1, wherein the ratio of silicon atoms of the T-form to the total silicon atoms contained in the condensed silicone resin cured product is 50 mol% or more.
  3.  前記縮合型シリコーン樹脂硬化物に含まれる全ケイ素原子に対するT3ケイ素原子の割合が、50モル%以上である、請求項2に記載の硬化物。
    (ここで、T3ケイ素原子とは、T体のケイ素原子のうち、3個の酸素原子の全てが他のケイ素原子と結合しているケイ素原子を意味する。)
    The cured product according to claim 2, wherein a ratio of T3 silicon atoms to all silicon atoms contained in the condensed silicone resin cured product is 50 mol% or more.
    (Here, the T3 silicon atom means a silicon atom in which all three oxygen atoms are bonded to other silicon atoms in the T-body silicon atoms.)
  4.  前記縮合型シリコーン樹脂硬化物が、式(A1)、式(A1’)、式(A2)または式(A3)で表される構造単位を含む、請求項1~3のいずれか1項に記載の硬化物。
    Figure JPOXMLDOC01-appb-C000002
    (式(A1)、式(A1’)、式(A2)および式(A3)中、
     Rは、炭素数1~10のアルキル基または炭素数6~10のアリール基を表す。
     Rは、炭素数1~4のアルコキシ基または水酸基を表す。
     複数あるRおよびRは、それぞれ同一であっても異なっていてもよい。)
    The condensed silicone resin cured product according to any one of claims 1 to 3, comprising a structural unit represented by formula (A1), formula (A1 '), formula (A2), or formula (A3). Cured product.
    Figure JPOXMLDOC01-appb-C000002
    (In Formula (A1), Formula (A1 ′), Formula (A2) and Formula (A3),
    R 1 represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms.
    R 2 represents an alkoxy group having 1 to 4 carbon atoms or a hydroxyl group.
    A plurality of R 1 and R 2 may be the same or different. )
  5.  前記Rがメチル基であり、
     前記Rが炭素数1~3のアルコキシ基または水酸基であり、複数あるRは同一であっても異なっていてもよい、請求項4に記載の硬化物。
    R 1 is a methyl group,
    The cured product according to claim 4, wherein R 2 is an alkoxy group having 1 to 3 carbon atoms or a hydroxyl group, and a plurality of R 2 may be the same or different.
  6.  前記縮合型シリコーン樹脂硬化物中にフィラーが分散している、請求項1~5のいずれか1項に記載の硬化物。 The cured product according to any one of claims 1 to 5, wherein a filler is dispersed in the condensed silicone resin cured product.
  7.  前記フィラーが、波長変換材料である、請求項6に記載の硬化物。 The cured product according to claim 6, wherein the filler is a wavelength conversion material.
  8.  前記波長変換材料が、蛍光体である、請求項7に記載の硬化物。 The cured product according to claim 7, wherein the wavelength conversion material is a phosphor.
  9.  請求項7または8に記載の硬化物を形成材料とする波長変換シート。 A wavelength conversion sheet using the cured product according to claim 7 or 8 as a forming material.
  10.  光を射出する光源と、
     前記光源から射出される光が入射する位置に配置された請求項9に記載の波長変換シートと、を有する発光装置。
    A light source that emits light;
    A light emitting device comprising: the wavelength conversion sheet according to claim 9 disposed at a position where light emitted from the light source is incident.
  11.  請求項1~8のいずれか1項に記載の硬化物を形成材料とする封止用部材。 A sealing member comprising the cured product according to any one of claims 1 to 8 as a forming material.
  12.  基材と、
     前記基材に配置された半導体発光素子と、
     前記半導体発光素子の少なくとも一部を封止する封止用部材と、を有し、
     前記封止用部材が、請求項11に記載の封止用部材である、半導体発光装置。
    A substrate;
    A semiconductor light emitting device disposed on the substrate;
    A sealing member for sealing at least a part of the semiconductor light emitting element,
    A semiconductor light-emitting device, wherein the sealing member is the sealing member according to claim 11.
  13.  前記半導体発光素子の発光波長が400nm以下である、請求項12に記載の半導体発光装置。 The semiconductor light-emitting device according to claim 12, wherein an emission wavelength of the semiconductor light-emitting element is 400 nm or less.
PCT/JP2017/031732 2016-09-07 2017-09-04 Cured product, wavelength conversion sheet, light-emitting device, sealing member, and semiconductor light-emitting device WO2018047760A1 (en)

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