WO2018046075A1 - Heat assisted magnetic recording media with optimized heat sink layer - Google Patents
Heat assisted magnetic recording media with optimized heat sink layer Download PDFInfo
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- WO2018046075A1 WO2018046075A1 PCT/EP2016/070964 EP2016070964W WO2018046075A1 WO 2018046075 A1 WO2018046075 A1 WO 2018046075A1 EP 2016070964 W EP2016070964 W EP 2016070964W WO 2018046075 A1 WO2018046075 A1 WO 2018046075A1
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- WIPO (PCT)
- Prior art keywords
- magnetic recording
- heat sink
- sink layer
- heat
- assisted magnetic
- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 28
- 150000003624 transition metals Chemical class 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 229910009817 Ti3SiC2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 61
- 125000004429 atom Chemical group 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 240000008564 Boehmeria nivea Species 0.000 description 1
- 239000006244 Medium Thermal Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PWBYYTXZCUZPRD-UHFFFAOYSA-N iron platinum Chemical compound [Fe][Pt][Pt] PWBYYTXZCUZPRD-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 transition metal carbides Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7375—Non-polymeric layer under the lowermost magnetic recording layer for heat-assisted or thermally-assisted magnetic recording [HAMR, TAMR]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7373—Non-magnetic single underlayer comprising chromium
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
Definitions
- the present invention relates to a heat assisted magnetic recording disk drive comprising a magnetic recording media with a heat sink layer.
- Heat assisted magnetic recording is one of the most promising technologies for future hard disk drive applications with increased storage density.
- a magnetic medium is heated above its Curie temperature by a laser beam.
- NFT near field optical transducer
- the laser beam is concentrated to nanosize to locally heat the recording medium.
- the cooling rate of the magnetic medium needs to be fast enough to avoid the thermal destabilization of the recorded information during the cool down time of the medium.
- the medium thermal profile has a direct impact on the recording performance and the record- ing density.
- the thermal profile formed on the recording medium depends on the optical profile generated by the optical transducer and also on the micro structure and the layer structure of the recording medium. It is known that the thermal gradient dominates the transition sharpness in HAMR and therefore the thermal gradient at the recording point determines the quality of the written transitions. It is found that strong heat-sinking of the media increases the thermal gradient.
- heat sink layers are used in HAMR media.
- the heat sink layer in the magnetic medium can help to provide minimal thermal spot sizes on the magnetic recording layer and data stability by removing the heat from the magnetic recording layer rapidly.
- materials with high thermal conductivity are preferred. In the prior art, for example Ag, Cu, and their alloys are candidates to act as a heat sink layer.
- US 8,576,672 describes a magnetic stack for a heat assisted magnetic recording media wherein a layer of the magnetic stack is configured as heat sink layer.
- the heat sink layer in the magnetic medium is used to achieve a specified thermal spot on the magnetic recording layer. It comprises different kinds of materials like conductors, lossy metal materials, dielectric materials, semiconductors and magnetic alloys.
- the objective of the present invention is to provide a heat assisted magnetic recording disk drive comprising a magnetic recording media with a heat sink layer, wherein the storage den- sity of the magnetic recording media is increased.
- the heat sink layer comprises at least a material being defined by the general structure M n+1 AX n , wherein M is a transition metal, A is an A-group element, X is C or N or a mixture of C and N, and n is a positive inte- ger, or a material defined by the general structure M n+1 X n , wherein M is a transition metal, X is one or both of C and N, and n is a positive integer, or a mixture of the materials being defined by the general structure M n+1 AX n and the material defined by the general structure M n+1 X n , wherein the crystal structure of the materials is hexagonal with repeated M-X-M (quasi 2D) atomic layers, the atomic layers are stacked along the c-axis and the c-axis is ori- ented substantially parallel to the surface normal of the heat sink layer.
- M is a transition metal
- A is an A-group element
- X is C or N or a
- MAX phases The materials being defined by the general structure M n+1 AX n are called "MAX phases" due to their chemical formula. All known MAX phases have a layered hexagonal structure with P6 3 /mmc symmetry, where the M layers are nearly closed packed, and the X atoms fill the oc- tahedral sites. The M n+1 X n layers are interleaved with the A element.
- the MAX phase structure can be described as 2D layers of early transition metal carbides and/or nitrides wherein an A element is metallically bonded to the M element.
- MXenes adopt the structures inherited from the parent MAX phases. They are produced by selectively etching out the A element from a MAX phase.
- the storage density of the magnetic recording media is increased by an optimized thermal gradient at the recording point.
- MAX phases and MXenes exhibit unusual and exceptional mechanical, electrical, thermal and chemical properties. They are electrically and thermally conductive due to their metallic-like nature of bonding.
- the key properties of the MAX phases and MXenes for their use as heat sink layers are their anisotropic thermal and electrical conductivities.
- the thermal and electrical conductivities in the direction parallel to the c-axis are 100 to 1000 times smaller with respect to the conductivities within the M-X-M plane perpendicular to the c-axis. Due to the orientation of the MAX phases or the MXenes in the heat sink layer and their 2D heat conductivity the heat wave contact area is enlarged. This promotes more efficient heat sinks wherein the heat is expanded laterally, only in the heat sink and not in the magnetic media. The thermal gradient is enlarged removing the heat more efficiently from the thermal spot in the media and preventing the spread of the same.
- the transition metal is selected from the group consisting of Sc, Ti, V, Cr, Mn, Zr, Nb, Mo, Tc, Lu, Hf, Ta, W or a combination of these elements.
- the A-group element is selected from the group consisting of Al, Si, P, S, Ga, Ge As, Cd, In, Sn, Sb, Tl, Pb, Bi or a combination of these elements.
- the atomic layers are repeated along the c-axis to define an optimal thickness based on the system requirements.
- the heat sink layer according to the present invention maybe a single layer or a multi-layer structure.
- the heat sink layer determines how fast the magnetic volume cools down wherein increasing the thermal conductivity or the thickness will result in lower temperatures in the magnetic media. Due to the excellent anisotropic thermal properties of the MAX phases or the MXenes the thickness of the heat sink layer can be thinner compared to the heat sink layers known from the prior art. Advantageously, the MAX phase or MXene layer thickness can be thinned at least down to about 10 nm.
- the absolute thermal conductivity of the heat sink layer is another factor that affects the thermal gradient and therefore the removal from heat of the thermal spot. Due to the fact that MAX phases or MXenes possess metal-like properties their electrical and thermal conductivity are sufficiently high ensuring a high thermal gradient in the magnetic media.
- Fig. 1 is a cross sectional diagram of a heat assisted magnetic recording media.
- Fig. 2 is a cross sectional diagram of a heat sink layer comprising a material being defined by the general structure M n+1 AX n .
- Fig. 3 is a cross sectional diagram of a heat sink layer comprising a material being defined by the general structure M n+1 X n .
- Fig. 1 is a cross sectional diagram of a heat assisted magnetic recording media 1 including a heat sink layer 4.
- the magnetic recording media 1 comprises a substrate 5, the heat sink layer 4 disposed over the substrate 5, a seed layer 3 disposed between the heat sink layer 4 and a magnetic recording layer 2.
- the substrate 5 may be made of any suitable material, such as ce- ramie glass, amorphous glass, or NiP coated Al-Mg alloy.
- the seed layer 3 utilizes e.g. MgO underlayers to induce the proper growth mode of the magnetic recording layer 2.
- the magnetic recording layer 2 may include crystalline grains of magnetic material, such as Ll 0 - chemically- ordered iron-platinum alloy film segregated by a non-magnetic material, such as an oxide, a carbide or a nitride.
- the heat sink layer 4 may be a single layer or a multi-layer structure, wherein the heat sink layer 4 comprises at least a material being defined by the general structure M n+1 AX n or by the general structure M n+1 X n .
- Fig. 2 shows a cross section of a heat sink layer 6 and illustrates the layer structures of the MAX phases being defined by the general structure M n+1 AX n in which the transitional metal carbide and/or nitride layers are interleaved with layers of pure A-group element and each X atom 9 is positioned within an octahedral array of M atoms 7.
- the MAX phases are oriented substantially with their c-axis parallel to the surface normal of the heat sink layer.
- Fig. 3 shows a cross section of a heat sink layer 10 and illustrates the layer structures of the MXenes being defined by the general structure M n+1 X n .
- MXenes adopt the structures inherited from the parent MAX phases the M atoms 11 are arranged within the M n+1 X n framework, wherein each X atom 12 is positioned within an octahedral array of M atoms 11.
- the MXenes are oriented substantially with their c-axis parallel to the surface normal of the heat sink layer.
Abstract
According to the invention, a heat assisted magnetic recording disk drive is provided which comprises a magnetic recording medium (1) with a heat sink layer (4), characterized in that the heat sink layer (4) comprises at least a material being defined by the general structure Mn+1AXn, wherein M is a transition metal, A is an A-group element, X is C or N or a mixture of C and N, and n is a positive integer, or a material defined by the general structure Mn+1AXn, wherein M is a transition metal, X is one or both of C and N, and n is a positive integer, or a mixture of the materials being defined by the general structure Mn+1AXn and the material defined by the general structure Mn+1Xn, wherein the crystal structure of the materials is hexagonal with repeated M-X-M (quasi 2D) atomic layers, the atomic layers are stacked along the (AA) and the (AA) is oriented substantially parallel to the surface normal of the heat sink layer. In this way, a heat assisted magnetic recording disk drive comprising a magnetic recording medium (1) with a heat sink layer (4) is provided, wherein the storage density of the magnetic recording medium (1) is increased.
Description
Heat Assisted Magnetic Recording Media with Optimized Heat Sink Layer
The present invention relates to a heat assisted magnetic recording disk drive comprising a magnetic recording media with a heat sink layer.
Heat assisted magnetic recording (HAMR) is one of the most promising technologies for future hard disk drive applications with increased storage density. In the writing process of HAMR, a magnetic medium is heated above its Curie temperature by a laser beam. Using a near field optical transducer (NFT), the laser beam is concentrated to nanosize to locally heat the recording medium. The cooling rate of the magnetic medium needs to be fast enough to avoid the thermal destabilization of the recorded information during the cool down time of the medium.
The medium thermal profile has a direct impact on the recording performance and the record- ing density. The thermal profile formed on the recording medium depends on the optical profile generated by the optical transducer and also on the micro structure and the layer structure of the recording medium. It is known that the thermal gradient dominates the transition sharpness in HAMR and therefore the thermal gradient at the recording point determines the quality of the written transitions. It is found that strong heat-sinking of the media increases the thermal gradient.
To support the ultrahigh areal density recording, the thermal issue needs to be well managed not only from the light delivery part, but also from the medium layer structure design. Therefore to facilitate thermal management heat sink layers are used in HAMR media. The heat sink layer in the magnetic medium can help to provide minimal thermal spot sizes on the magnetic recording layer and data stability by removing the heat from the magnetic recording layer rapidly. As heat sink layers play a key role in the thermal control of the magnetic medium, materials with high thermal conductivity are preferred. In the prior art, for example Ag, Cu, and their alloys are candidates to act as a heat sink layer.
US 8,576,672 describes a magnetic stack for a heat assisted magnetic recording media wherein a layer of the magnetic stack is configured as heat sink layer. The heat sink layer in the magnetic medium is used to achieve a specified thermal spot on the magnetic recording layer.
It comprises different kinds of materials like conductors, lossy metal materials, dielectric materials, semiconductors and magnetic alloys.
The disadvantages of most of the materials used as a heat sink layer described in the prior art are that they show an isotropic heat conduction, wherein the thermal conductivity does not depend on the direction.
The objective of the present invention is to provide a heat assisted magnetic recording disk drive comprising a magnetic recording media with a heat sink layer, wherein the storage den- sity of the magnetic recording media is increased.
According to the invention, this object is achieved in that the heat sink layer comprises at least a material being defined by the general structure Mn+1AXn, wherein M is a transition metal, A is an A-group element, X is C or N or a mixture of C and N, and n is a positive inte- ger, or a material defined by the general structure Mn+1Xn, wherein M is a transition metal, X is one or both of C and N, and n is a positive integer, or a mixture of the materials being defined by the general structure Mn+1AXn and the material defined by the general structure Mn+1Xn, wherein the crystal structure of the materials is hexagonal with repeated M-X-M (quasi 2D) atomic layers, the atomic layers are stacked along the c-axis and the c-axis is ori- ented substantially parallel to the surface normal of the heat sink layer.
The materials being defined by the general structure Mn+1AXn are called "MAX phases" due to their chemical formula. All known MAX phases have a layered hexagonal structure with P63/mmc symmetry, where the M layers are nearly closed packed, and the X atoms fill the oc- tahedral sites. The Mn+1Xn layers are interleaved with the A element. In other words, the MAX phase structure can be described as 2D layers of early transition metal carbides and/or nitrides wherein an A element is metallically bonded to the M element.
The materials being defined by the general structure Mn+1Xn are called "MXenes". MXenes adopt the structures inherited from the parent MAX phases. They are produced by selectively etching out the A element from a MAX phase.
It was found that materials with an anisotropic heat conduction wherein the thermal conductivity varies with direction will sharpen the thermal gradient and therefore improve and sharp-
en the bit size of the magnetic media. According to the invention, the storage density of the magnetic recording media is increased by an optimized thermal gradient at the recording point. Studies have shown that MAX phases and MXenes exhibit unusual and exceptional mechanical, electrical, thermal and chemical properties. They are electrically and thermally conductive due to their metallic-like nature of bonding. The key properties of the MAX phases and MXenes for their use as heat sink layers are their anisotropic thermal and electrical conductivities. The thermal and electrical conductivities in the direction parallel to the c-axis are 100 to 1000 times smaller with respect to the conductivities within the M-X-M plane perpendicular to the c-axis. Due to the orientation of the MAX phases or the MXenes in the heat sink layer and their 2D heat conductivity the heat wave contact area is enlarged. This promotes more efficient heat sinks wherein the heat is expanded laterally, only in the heat sink and not in the magnetic media. The thermal gradient is enlarged removing the heat more efficiently from the thermal spot in the media and preventing the spread of the same. MAX phase or MXene materials with the largest electronic contribution to the thermal conductivity and with the largest anisotropy of electrical conductivity are preferred for replacing isotropic metallic heat sink layers in HAMR media. Advantageously, the transition metal is selected from the group consisting of Sc, Ti, V, Cr, Mn, Zr, Nb, Mo, Tc, Lu, Hf, Ta, W or a combination of these elements.
Further, advantageously the A-group element is selected from the group consisting of Al, Si, P, S, Ga, Ge As, Cd, In, Sn, Sb, Tl, Pb, Bi or a combination of these elements.
According to a preferred embodiment of the invention the atomic layers are repeated along the c-axis to define an optimal thickness based on the system requirements. The heat sink layer according to the present invention maybe a single layer or a multi-layer structure. The most promising compounds for replacing isotropic metallic heat-sink layers in HAMR media are Ti2AlC and Ti3SiC2 due to their high electrical and thermal conductivities. The main reason of the good thermal conductivities in these compounds is their good electrical conductivity. According to Wiedmann-Franz Law the electronic contribution to the total thermal conductivity, ke, can be estimated as ke = LoT/p, where Lo is the classical Lorenz
-8 2
number (Lo = 2.45· 10" \ΥΏ/Κ ) and p is the electrical resistivity at temperature T. The electronic contribution to the total thermal conductivity at T = 300 K and 1300 K for Ti3SiC2 is about 30 W/(m- K), which is 97% of the total thermal conductivity. Thus, in these systems, where thermal conductivity is mostly defined by ke the largest anisotropy in thermal conduc- tivities is expected due to anisotropic electrical properties. The anisotropic heat conduction is required for sharpen the thermal gradient what is the objective of the present invention.
The heat sink layer determines how fast the magnetic volume cools down wherein increasing the thermal conductivity or the thickness will result in lower temperatures in the magnetic media. Due to the excellent anisotropic thermal properties of the MAX phases or the MXenes the thickness of the heat sink layer can be thinner compared to the heat sink layers known from the prior art. Advantageously, the MAX phase or MXene layer thickness can be thinned at least down to about 10 nm.
The absolute thermal conductivity of the heat sink layer is another factor that affects the thermal gradient and therefore the removal from heat of the thermal spot. Due to the fact that MAX phases or MXenes possess metal-like properties their electrical and thermal conductivity are sufficiently high ensuring a high thermal gradient in the magnetic media.
In the drawings:
Fig. 1 is a cross sectional diagram of a heat assisted magnetic recording media. Fig. 2 is a cross sectional diagram of a heat sink layer comprising a material being defined by the general structure Mn+1AXn.
Fig. 3 is a cross sectional diagram of a heat sink layer comprising a material being defined by the general structure Mn+1Xn.
Fig. 1 is a cross sectional diagram of a heat assisted magnetic recording media 1 including a heat sink layer 4. The magnetic recording media 1 comprises a substrate 5, the heat sink layer 4 disposed over the substrate 5, a seed layer 3 disposed between the heat sink layer 4 and a magnetic recording layer 2. The substrate 5 may be made of any suitable material, such as ce-
ramie glass, amorphous glass, or NiP coated Al-Mg alloy. The seed layer 3 utilizes e.g. MgO underlayers to induce the proper growth mode of the magnetic recording layer 2. The magnetic recording layer 2 may include crystalline grains of magnetic material, such as Ll0- chemically- ordered iron-platinum alloy film segregated by a non-magnetic material, such as an oxide, a carbide or a nitride. The heat sink layer 4 may be a single layer or a multi-layer structure, wherein the heat sink layer 4 comprises at least a material being defined by the general structure Mn+1AXn or by the general structure Mn+1Xn.
Fig. 2 shows a cross section of a heat sink layer 6 and illustrates the layer structures of the MAX phases being defined by the general structure Mn+1AXn in which the transitional metal carbide and/or nitride layers are interleaved with layers of pure A-group element and each X atom 9 is positioned within an octahedral array of M atoms 7. The MAX phases are oriented substantially with their c-axis parallel to the surface normal of the heat sink layer. Fig. 3 shows a cross section of a heat sink layer 10 and illustrates the layer structures of the MXenes being defined by the general structure Mn+1Xn. Because MXenes adopt the structures inherited from the parent MAX phases the M atoms 11 are arranged within the Mn+1Xn framework, wherein each X atom 12 is positioned within an octahedral array of M atoms 11. The MXenes are oriented substantially with their c-axis parallel to the surface normal of the heat sink layer.
Reference Signs
1 Magnetic recording media
2 Magnetic recording layer
3 Seed layer
4 Heat sink layer
5 Substrate
6 Heat sink layer made of MAX phase material
7 Transition metal atom M
8 A-group element A
9 C and/or N atom X
10 Heat sink layer made of MXene material
11 Transition metal atom M
12 C and/or N atom X
Claims
1. A heat assisted magnetic recording disk drive comprising a magnetic recording media (1) with a heat sink layer (4), characterized in that
the heat sink layer (4) comprises
at least a material being defined by the general structure Mn+1AXn, wherein M is a transition metal, A is an A-group element, X is C or N or a mixture of C and N, and n is a positive integer, or
a material defined by the general structure Mn+1Xn, wherein M is a transition metal, X is one or both of C and N, and n is a positive integer, or
a mixture of the materials being defined by the general structure Mn+1AXn and the material defined by the general structure Mn+1Xn, wherein
the crystal structure of the materials is hexagonal with repeated M-X-M (quasi 2D) atomic layers,
the atomic layers are stacked along the c-axis and
the c-axis is oriented substantially parallel to the surface normal of the heat sink layer.
2. The heat assisted magnetic recording disk drive of claim 1, characterized in that the transition metal is selected from the group consisting of Sc, Ti, V, Cr, Mn, Zr, Nb, Mo, Tc, Lu, Hf, Ta, W or a combination of these elements.
3. The heat assisted magnetic recording disk drive of claim 1 or 2, characterized in that the A-group element is selected from the group consisting of Al, Si, P, S, Ga, Ge As, Cd, In, Sn, Sb, TI, Pb, Bi or a combination of these elements.
4. The heat assisted magnetic recording disk drive of one of the preceding claims, characterized in that the atomic layers are repeated along the c-axis.
5. The heat assisted magnetic recording disk drive of one of the preceding claims, char- acterized in that Mn+1AXn is Ti2AlC, Ti3SiC2, etc.
6. The heat assisted magnetic recording disk drive of one of the preceding claims, characterized in that the thickness of the heat sink layer is between lOnm and 50nm, preferably between lOnm and 20nm.
7. The heat assisted magnetic recording disk drive of one of the preceding claims, characterized in that the thermal conductivity of heat sink layer is between 30 W/m/K and 200 W/m/K, preferably between 30 W/m/K and 50 W/m/K.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/070964 WO2018046075A1 (en) | 2016-09-06 | 2016-09-06 | Heat assisted magnetic recording media with optimized heat sink layer |
| US16/330,560 US20200211590A1 (en) | 2016-09-06 | 2016-09-06 | Heat assisted magnetic recording media with optimized heat sink layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/070964 WO2018046075A1 (en) | 2016-09-06 | 2016-09-06 | Heat assisted magnetic recording media with optimized heat sink layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018046075A1 true WO2018046075A1 (en) | 2018-03-15 |
Family
ID=56877050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2016/070964 WO2018046075A1 (en) | 2016-09-06 | 2016-09-06 | Heat assisted magnetic recording media with optimized heat sink layer |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20200211590A1 (en) |
| WO (1) | WO2018046075A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040240327A1 (en) * | 2003-05-29 | 2004-12-02 | Seagate Technology Llc | Patterned media for heat assisted magnetic recording |
| WO2005038985A2 (en) * | 2003-10-16 | 2005-04-28 | Abb Research Ltd. | COATINGS OF Mn+1AXn MATERIAL FOR ELECTRICAL CONTACT ELEMENTS |
| US20050157597A1 (en) * | 2003-05-29 | 2005-07-21 | Seagate Technology Llc | Optimized media grain packing fraction for bit patterned magnetic recording media |
| US8576672B1 (en) * | 2012-05-25 | 2013-11-05 | Seagate Technology Llc | Heat sink layer |
| WO2014088995A1 (en) * | 2012-12-04 | 2014-06-12 | Drexel University | Compositions comprising free-standing two-dimensional nanocrystal |
| US20150179204A1 (en) * | 2013-12-24 | 2015-06-25 | HGST Netherlands B.V. | Thermally stable au alloys as a heat diffusion and plasmonic underlayer for heat-assisted magnetic recording (hamr) media |
-
2016
- 2016-09-06 WO PCT/EP2016/070964 patent/WO2018046075A1/en active Application Filing
- 2016-09-06 US US16/330,560 patent/US20200211590A1/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040240327A1 (en) * | 2003-05-29 | 2004-12-02 | Seagate Technology Llc | Patterned media for heat assisted magnetic recording |
| US20050157597A1 (en) * | 2003-05-29 | 2005-07-21 | Seagate Technology Llc | Optimized media grain packing fraction for bit patterned magnetic recording media |
| WO2005038985A2 (en) * | 2003-10-16 | 2005-04-28 | Abb Research Ltd. | COATINGS OF Mn+1AXn MATERIAL FOR ELECTRICAL CONTACT ELEMENTS |
| US8576672B1 (en) * | 2012-05-25 | 2013-11-05 | Seagate Technology Llc | Heat sink layer |
| WO2014088995A1 (en) * | 2012-12-04 | 2014-06-12 | Drexel University | Compositions comprising free-standing two-dimensional nanocrystal |
| US20150179204A1 (en) * | 2013-12-24 | 2015-06-25 | HGST Netherlands B.V. | Thermally stable au alloys as a heat diffusion and plasmonic underlayer for heat-assisted magnetic recording (hamr) media |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200211590A1 (en) | 2020-07-02 |
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