WO2018040021A1 - 一种2.1微米波段脉冲激光的产生装置、产生方法及应用 - Google Patents

一种2.1微米波段脉冲激光的产生装置、产生方法及应用 Download PDF

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WO2018040021A1
WO2018040021A1 PCT/CN2016/097669 CN2016097669W WO2018040021A1 WO 2018040021 A1 WO2018040021 A1 WO 2018040021A1 CN 2016097669 W CN2016097669 W CN 2016097669W WO 2018040021 A1 WO2018040021 A1 WO 2018040021A1
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micron
pulsed laser
laser
band
pulse laser
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PCT/CN2016/097669
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English (en)
French (fr)
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于永芹
谢建
梁德志
杜晨林
阮双琛
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深圳大学
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Priority to PCT/CN2016/097669 priority Critical patent/WO2018040021A1/zh
Publication of WO2018040021A1 publication Critical patent/WO2018040021A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects

Definitions

  • the invention belongs to the field of optics, and in particular relates to a 2.1 micron band pulse laser generating device, a generating method and an application thereof.
  • the technology for generating ultrashort pulse lasers in the 2.1 micron band is mainly divided into active mode locking and passive mode locking.
  • Active mode-locking has a wide response time due to the long response time of the required modulation components, and the resulting loss window is wide, typically on the order of tens to hundreds of picoseconds (ps).
  • Passive mode-locking utilizes the fast response time of a saturable absorber to achieve an ultrashort pulse laser as short as femtosecond (fs).
  • the saturable absorbers in the 2.1 micron band mainly include: (1) absorption crystals such as: PbS quantum dot glass, Cr 2+ : ZnS, Cr 2+ : ZnSe, etc.; (2) semiconductor materials: such as semiconductor saturable absorption mirrors (SESAM), InGaAs, etc.; (3) New one-dimensional, two-dimensional materials such as graphene, carbon nanotubes, MoS 2, and the like.
  • the lower photodamage threshold of the saturable absorber limits the output power of the passive mode-locked ultrashort pulse laser in the 2.1 micron band.
  • the present invention provides a 2.1 micron band pulse laser generating device and a generating method, aiming at Get high-power, high-energy 2.1 micron ultrashort pulse lasers while simplifying the process.
  • the invention provides a 2.1 micron band pulse laser generating device, comprising a semiconductor pump pulse laser, a pump light focusing coupling system and a resonant cavity, the resonant cavity comprising an end face pumping laser medium, the end face pumping laser medium a vanadate crystal doped with cerium ions; the pump light generated by the semiconductor pump pulsed laser is coupled into the vanadium-doped vanadate crystal via the pump light focusing coupling system, and the cerium ion passes through Excimer radiation, generating a 1.34 micron band pulsed laser, the 1.34 micron band pulsed laser oscillates in the resonant cavity; the vanadate crystal performs Raman frequency conversion and mode locking on the 1.34 micron band pulsed laser to generate 1.52 micron band pulsed laser, the 1.52 micron band pulsed laser oscillates in the resonant cavity; the vanadate crystal further performs Raman frequency conversion and mode locking on the 1.52 micrometer band pulsed laser to generate a 1.76 micron band a
  • the resonant cavity further includes a pump end mirror, the pump end mirror is located between the pump light focusing coupling system and the end pump laser medium for reflecting 1.34 micrometers, 1.52 micrometers Pulsed lasers in the 1.76-micron and 2.1-micron bands, as well as pumping light through the 808 nm band.
  • the resonant cavity further includes an output mirror for reflecting the 1.34 micron, 1.52 micron, and 1.76 micron wavelength bands while simultaneously reflecting and transmitting the pulsed laser light in the 2.1 micron band.
  • the resonant cavity further includes an acousto-optic Q switch located between the end-pumped laser medium and the output mirror for increasing the pulsed laser power density in the resonant cavity.
  • the pump light has a wavelength of 808 nm.
  • the end-pumped laser medium is a Nd:YVO 4 crystal or a Nd:GdVO 4 crystal.
  • the invention also provides a method for generating a pulsed laser in a 2.1 micron band, comprising the following steps:
  • the pump light generated by the semiconductor pump pulse laser is coupled into the vanadate crystal doped with ytterbium ions through a pump light focusing coupling system, and the erbium ions pass the stimulated radiation to generate a pulsed laser of 1.34 micron wavelength;
  • the Raman frequency conversion of the vanadium crystal and the mode-locking action are used to convert the 1.76 micron pulsed laser into a 2.1 micron pulsed laser.
  • the pump light has a wavelength of 808 nm.
  • the vanadate crystal is a Nd:YVO 4 crystal or a Nd:GdVO 4 crystal.
  • the present invention also provides an application of a 2.1 micron pulsed laser that applies a 2.1 micron pulsed laser to military, medical, environmental monitoring, material processing, telecommunications, or metrology.
  • the present invention has the beneficial effects that the present invention provides a 2.1 micron band pulse laser generating device and a generating method, wherein the resonant cavity of the generating device comprises an end face pumping laser medium, and the end face pumping
  • the laser medium is a vanadium-doped vanadate crystal
  • the stimulated radiation is generated by the erbium ion to generate a pulsed laser of 1.34 micron band
  • the pulsed laser of 1.34 micron is used as the fundamental light
  • the three-dimensional Raman of the vanadate crystal is utilized. Frequency conversion and clamping mode, output pulsed laser in 2.1 micron band.
  • the invention combines the excellent self-Raman frequency conversion characteristic of the ytterbium ion doped vanadate crystal with the Kerr lens lock model property, and adopts the three mechanisms of Kerr lens mode locking, saturated Raman gain and synchronous pumping. Produces stable mode-locking of pulsed lasers in the 2.1 micron band, and finally outputs ultrashort pulse lasers in the 2.1 micron band.
  • the 2.1 micron band pulse laser generating device and the generating method provided by the invention can avoid the limitation of the light damage threshold of the saturable absorber, so that a high power and high energy 2.1 micron ultrashort pulse laser can be obtained.
  • FIG. 1 is a schematic structural view of a 2.1 micron-band pulse laser generating apparatus according to an embodiment of the present invention.
  • an embodiment of the present invention provides a 2.1 micron band pulse laser generating apparatus 100, including a semiconductor pump pulse laser (not shown), a pump light focusing coupling system 2, and a resonant cavity 7, a resonant cavity.
  • the end-pumped laser medium 4 includes an end-pumped laser medium 4; wherein 1 is the fiber output end of the semiconductor pump pulsed laser, the end-pumped laser medium 4 is a vanadium-doped vanadate crystal; and the pump light generated by the semiconductor pump pulsed laser
  • the pumping light focusing coupling system 2 is coupled into a vanadate crystal doped with ytterbium ions (end-pumped laser medium 4), and the erbium ions pass through the stimulated radiation to generate a pulsed laser of 1.34 micron band, and the 1.34 micron band pulse laser is
  • the vanadate crystal further performs Raman frequency conversion and mode locking on the 1.52 micron band pulse laser to generate a 1.76 micron band pulse laser
  • the 1.34 micron-band pulsed laser generates a pulsed laser of 2.1 micron band under the self-Raman frequency conversion and the Kerr lens mode-locking function of the vanadate crystal.
  • the pump light has a wavelength of 808 nm.
  • the resonant cavity 7 further includes a pumping end mirror 3 between the pumping light focusing coupling system 2 and the end pumped laser medium 4 for reflecting 1.34 micrometers, 1.52 micrometers, 1.76 micrometers, and 2.1 micrometers.
  • the pulsed laser of the band passes through the pump light of the 808 nm band at the same time.
  • the resonant cavity 7 also includes an output mirror 6 for reflecting pulsed lasers in the 1.34 micron, 1.52 micron, and 1.76 micron bands while reflecting and transmitting through the 2.1 micron band.
  • the pump end mirror 3 can be a plane mirror, a plano-convex mirror or a flat-concave mirror, and is plated with a high-permeability pulsed laser in the 808 nm band and a high-reversal dielectric film of 1.34 micrometers, 1.52 micrometers, 1.76 micrometers, and 2.1 micrometers.
  • the output mirror 6 can be a plane mirror, a plano-convex mirror or a plano-concave mirror, and is plated with a 1.34 micron, 1.52 micron, and 1.76 micron pulsed laser high-reflection and a partially transmissive dielectric film for a 2.1 micron pulsed laser.
  • the resonant cavity 7 also includes an acousto-optic Q switch 5 between the end-pumped laser medium 4 and the output mirror 6 for increasing the pulsed laser power density within the resonant cavity 7.
  • the end-pumped laser medium 4 may be Nd:YVO 4 crystal or Nd:GdVO 4 crystal, Nd:YVO 4 crystal or Nd:GdVO 4 crystal with a pulsed laser of 1.34 micron wavelength as the base frequency light, using vanadate Three-dimensional Raman frequency conversion and mode-locking of the crystal around 890 cm -1 produces a pulsed laser of 2.1 micron band.
  • Generating 2.1 micron band pulsed laser apparatus provides, neodymium ions doped vanadate crystal has characteristic Raman frequency conversion, and 890cm -1 Kerr lens mode-locking characteristics combined, in particular by Kerr-lens
  • the three mechanisms of mode-locking, saturated Raman gain and synchronous pumping result in stable mode-locking of the 2.1-micron pulsed laser, resulting in a high-power, high-energy 2.1 micron ultrashort pulse laser.
  • This embodiment also provides a method for generating a pulsed laser in a 2.1 micron band, comprising the following steps:
  • the pump light generated by the semiconductor pump pulse laser is coupled into the vanadate crystal doped with ytterbium ions through a pumping light focusing coupling system, and the erbium ions pass the stimulated radiation to generate a pulsed laser of 1.34 micron wavelength;
  • step S1 the pump light generated by the semiconductor pump pulse laser is output from the fiber output end 1 of the semiconductor pump pulse laser, and enters the pump light through the pump light focusing coupling system 2, and the pump light focusing coupling system 2 pumping the pump light into the end-pumped laser medium 4 (yttrium-doped vanadate crystal), wherein the helium ions pass through the stimulated radiation to produce a pulsed laser of 1.34 micron band, and the 1.34 micron band pulse laser is The inside of the cavity 7 oscillates.
  • the end-pumped laser medium 4 yttrium-doped vanadate crystal
  • step S2 the vanadate crystal is outputted in a 1.34 micron-band pulsed laser as a baseband light, using Raman frequency conversion and mode-locking action of the vanadate crystal, and the pump end mirror 3 and the output mirror 6 The role of generating a pulsed laser in the 1.52 micron band.
  • step S3 the Raman frequency conversion and the mode locking action of the vanadate crystal, and the action of the pump end mirror 3 and the output mirror 6 are used to convert the 1.52 micrometer pulse laser into a 1.76 micrometer pulse. laser.
  • step S4 the Raman frequency conversion and the mode locking action of the vanadate crystal, and the action of the pump end mirror 3 and the output mirror 6 are used to convert the 1.76 micron pulse laser into a 2.1 micron pulse. laser.
  • the pump light has a wavelength of 808 nm.
  • the pump end mirror 3 can be a plane mirror, a plano-convex mirror or a flat-concave mirror, and is plated with a high-permeability pulsed laser in the 808 nm band and a high-reverse dielectric film for the pulsed lasers of 1.34 micrometers, 1.52 micrometers, 1.76 micrometers, and 2.1 micrometers; 6 can be a plane mirror, a plano-convex mirror or a flat-concave mirror, and is coated with a dielectric film that reflects pulsed lasers of 1.34 micrometers, 1.52 micrometers, and 1.76 micrometers, and partially reflects and partially transmits a pulsed laser of 2.1 micrometers.
  • the cerium ion doped vanadate crystal may be a Nd:YVO 4 crystal or a Nd:GdVO 4 crystal.
  • the Nd:YVO 4 crystal or the Nd:GdVO 4 crystal in the step S2 uses a pulsed laser of 1.34 micron band as the baseband light, and uses a three-dimensional Raman frequency conversion and a mode-locking action of the vanadium crystal of about 890 cm -1 .
  • a pulsed laser of 2.1 micron band is produced.
  • the method for generating a pulsed laser in the 2.1 micron band provided by the embodiment can avoid the limitation of the lower light damage threshold of the saturable absorber, so that a high power and high energy ultrashort pulse laser of 2.1 micron band can be obtained.
  • This embodiment also provides the application of the above-mentioned 2.1 micron band pulse laser, which has extensive and important applications in the fields of military, medical, environmental monitoring, material processing, telecommunications, or metrology.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

一种2.1微米波段脉冲激光的产生装置（100），包括半导体泵浦脉冲激光器、泵浦光聚焦耦合系统（2）及谐振腔（7）。谐振腔（7）包括端面泵浦激光介质（4），端面泵浦激光介质（4）为掺杂钕离子的钒酸盐晶体；半导体泵浦脉冲激光器产生的泵浦光经泵浦光聚焦耦合系统（2）耦合进入掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段脉冲激光，1.34微米波段脉冲激光在谐振腔（7）内振荡；钒酸盐晶体对1.34微米波段脉冲激光进行三次拉曼变频作用及锁模作用，输出2.1微米波段脉冲激光。这种2.1微米波段脉冲激光的产生装置，避免了可饱和吸收体光损伤阈值较低的局限性，从而获得高功率、高能量的2.1微米波段超短脉冲激光。

Description

一种2.1微米波段脉冲激光的产生装置、产生方法及应用 技术领域
本发明属于光学领域，尤其涉及一种2.1微米波段脉冲激光的产生装置、产生方法及应用。
背景技术
目前2.1微米波段脉冲激光的获取方式主要有两种：一、以三价稀土元素Tm3+、Ho3+为激活离子的固体或者光纤脉冲激光器。二、利用1微米波段脉冲激光泵浦ZnGeP（ZGP)或者KTiOPO4（KTP）晶体的光参量振荡器（OPO）。第二种获取方式由于所用器件结构复杂、成本较高、效率低而极少采用。
产生2.1微米波段超短脉冲激光的技术主要分为主动锁模和被动锁模两种。主动锁模由于所需要的调制元件响应时间比较长，而且其产生的损耗窗口非常宽，因此获得的脉宽较宽，通常在几十到上百皮秒（ps）量级。被动锁模利用可饱和吸收体的快速响应时间，可以获得短至飞秒（fs）量级的超短脉冲激光。目前2.1微米波段的可饱和吸收体主要有：（1）吸收晶体，如：PbS量子点玻璃、Cr2+:ZnS、Cr2+:ZnSe等；（2）半导体材料：如半导体可饱和吸收镜（SESAM）、InGaAs等；（3）新型一维、二维材料，如石墨烯、碳纳米管、MoS2等。然而，可饱和吸收体较低的光损伤阈值限制了2.1微米波段被动锁模超短脉冲激光的输出功率。
因此，现有技术存在缺陷，需要改进。
 技术问题
为解决上述技术 问题，本发明提供了一种 2.1 微米波段脉冲激光的产生装置、产生方法 ，旨在 获得高功率、高能量的 2.1 微米波段超短脉冲激光，同时简化产生过程 。
技术解决方案
本发明提供了一种2.1微米波段脉冲激光的产生装置，包括半导体泵浦脉冲激光器、泵浦光聚焦耦合系统及谐振腔，所述谐振腔包括端面泵浦激光介质，所述端面泵浦激光介质为掺杂钕离子的钒酸盐晶体；所述半导体泵浦脉冲激光器产生的泵浦光经所述泵浦光聚焦耦合系统耦合进入所述掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段脉冲激光，所述1.34微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体对所述1.34微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光，所述1.52微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体再对所述1.52微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.76微米波段脉冲激光，所述1.76微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体对所述1.76微米波段脉冲激光进行拉曼变频作用及锁模作用，输出2.1微米波段脉冲激光。
进一步地，所述谐振腔还包括泵浦端腔镜，所述泵浦端腔镜位于所述泵浦光聚焦耦合系统和所述端面泵浦激光介质之间，用于反射1.34微米、1.52微米、1.76微米及2.1微米波段的脉冲激光、同时透过808纳米波段的泵浦光。
进一步地，所述谐振腔还包括输出镜，用于反射1.34微米、1.52微米及1.76微米波段、同时反射及透过2.1微米波段的脉冲激光。
进一步地，所述谐振腔还包括声光Q开关，所述声光Q开关位于所述端面泵浦激光介质和所述输出镜之间，用于提高所述谐振腔内的脉冲激光功率密度。
进一步地，所述泵浦光的波长为808纳米。
进一步地，所述端面泵浦激光介质为Nd:YVO4晶体或Nd:GdVO4晶体。
本发明还提供了一种2.1微米波段脉冲激光的产生方法，包括以下步骤：
半导体泵浦脉冲激光器产生的泵浦光经泵浦光聚焦耦合系统耦合进入掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段的脉冲激光；
以所述1.34微米波段的脉冲激光为基频光，利用钒酸盐晶体的拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光；
利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.52微米波段脉冲激光转变为1.76微米波段脉冲激光；
再利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.76微米波段脉冲激光转变为2.1微米波段脉冲激光。
进一步地，所述泵浦光的波长为808纳米。
进一步地，所述钒酸盐晶体为Nd:YVO4晶体或Nd:GdVO4晶体。
本发明还提供了一种2.1微米波段脉冲激光的应用，将2.1微米波段脉冲激光应用于军事、医学、环境监测、材料加工、远程通信或计量学领域。
 有益效果
本发明与现有技术相比，有益效果在于：本发明提供的一种2.1微米波段脉冲激光的产生装置、产生方法，所述产生装置的谐振腔包括端面泵浦激光介质，所述端面泵浦激光介质为掺杂钕离子的钒酸盐晶体；先通过钕离子产生受激辐射，产生1.34微米波段脉冲激光，再以1.34微米波段脉冲激光为基频光，利用钒酸盐晶体的三次拉曼变频作用及锁模作用，输出2.1微米波段脉冲激光。本发明将掺杂钕离子的钒酸盐晶体所具有的优良的自拉曼变频特性和克尔透镜锁模特性结合起来，通过克尔透镜锁模、饱和拉曼增益和同步泵浦三种机制产生对2.1微米波段脉冲激光的稳定锁模，最终输出2.1微米波段的超短脉冲激光。本发明提供的2.1微米波段脉冲激光的产生装置、产生方法由于避免了可饱和吸收体光损伤阈值较低的局限性，从而可以获得高功率、高能量的2.1微米波段超短脉冲激光。
 附图说明
图1是本发明 实施例提供的 2.1 微米波段脉冲激光的产生装置的结构示意图。
本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图1所示，本发明实施例提供了一种2.1微米波段脉冲激光的产生装置100，包括半导体泵浦脉冲激光器（未示出）、泵浦光聚焦耦合系统2及谐振腔7，谐振腔7包括端面泵浦激光介质4；其中，1为半导体泵浦脉冲激光器的光纤输出端，端面泵浦激光介质4为掺杂钕离子的钒酸盐晶体；半导体泵浦脉冲激光器产生的泵浦光经泵浦光聚焦耦合系统2耦合进入掺杂钕离子的钒酸盐晶体（端面泵浦激光介质4），钕离子通过受激辐射，产生1.34微米波段脉冲激光，所述1.34微米波段脉冲激光在谐振腔7内震荡；所述钒酸盐晶体对所述1.34微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光，所述1.52微米波段脉冲激光在谐振腔7内震荡；所述钒酸盐晶体再对所述1.52微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.76微米波段脉冲激光，所述1.76微米波段脉冲激光在谐振腔7内震荡；所述钒酸盐晶体对所述1.76微米波段脉冲激光进行拉曼变频作用及锁模作用，输出2.1微米波段脉冲激光。
具体地，所述1.34微米波段脉冲激光在钒酸盐晶体所具有的自拉曼变频作用和克尔透镜锁模作用下，产生2.1微米波段脉冲激光。
具体地，所述泵浦光的波长为808纳米。
谐振腔7还包括泵浦端腔镜3，泵浦端腔镜3位于泵浦光聚焦耦合系统2和端面泵浦激光介质4之间，用于反射1.34微米、1.52微米、1.76微米及2.1微米波段的脉冲激光、同时透过808纳米波段的泵浦光。
谐振腔7还包括输出镜6，用于反射1.34微米、1.52微米及1.76微米波段、同时反射及透过2.1微米波段的脉冲激光。
具体地，泵浦端腔镜3可以为平面镜、平凸镜或平凹镜，镀对808nm波段脉冲激光高透和对1.34微米、1.52微米、1.76微米及2.1微米波段脉冲激光高反的介质膜；输出镜6可以为平面镜、平凸镜或平凹镜，镀对1.34微米、1.52微米及1.76微米波段脉冲激光高反及对2.1微米波段脉冲激光部分反射、部分透过的介质膜。
谐振腔7还包括声光Q开关5，声光Q开关5位于端面泵浦激光介质4和输出镜6之间，用于提高谐振腔7内的脉冲激光功率密度。
具体地，端面泵浦激光介质4可以为Nd:YVO4晶体或Nd:GdVO4晶体，Nd:YVO4晶体或Nd:GdVO4晶体以1.34微米波段的脉冲激光为基频光，利用钒酸盐晶体的890cm-1左右的三次拉曼变频作用及锁模作用，产生2.1微米波段脉冲激光。
本实施例提供的2.1微米波段脉冲激光的产生装置，将掺杂钕离子的钒酸盐晶体所具有的890cm-1的拉曼变频特性和克尔透镜锁模特性结合起来，具体通过克尔透镜锁模、饱和拉曼增益和同步泵浦三种机制产生对2.1微米波段脉冲激光的稳定锁模，从而获得了高功率、高能量的2.1微米波段超短脉冲激光。
本实施例还提供了一种2.1微米波段脉冲激光的产生方法，包括以下步骤：
S1：半导体泵浦脉冲激光器产生的泵浦光经泵浦光聚焦耦合系统耦合进入掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段的脉冲激光；
S2：以所述1.34微米波段的脉冲激光为基频光，利用钒酸盐晶体的拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光；
S3：利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.52微米波段脉冲激光转变为1.76微米波段脉冲激光；
S4：再利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.76微米波段脉冲激光转变为2.1微米波段脉冲激光。
结合上述2.1微米波段脉冲激光的产生装置100：
具体地，步骤S1中，半导体泵浦脉冲激光器产生的泵浦光由半导体泵浦脉冲激光器的光纤输出端1输出，进入泵浦光经泵浦光聚焦耦合系统2中，泵浦光聚焦耦合系统2将泵浦光聚焦于端面泵浦激光介质4（掺杂钕离子的钒酸盐晶体）中，其中的钕离子通过受激辐射，产生1.34微米波段脉冲激光，所述1.34微米波段脉冲激光在谐振腔7内震荡。
具体地，步骤S2中，钒酸盐晶体以输出的1.34微米波段脉冲激光为基频光，利用钒酸盐晶体的拉曼变频作用及锁模作用，以及泵浦端腔镜3和输出镜6的作用，产生1.52微米波段脉冲激光。
具体地，步骤S3中，利用钒酸盐晶体的拉曼变频作用及锁模作用，以及泵浦端腔镜3和输出镜6的作用，将所述1.52微米波段脉冲激光转变为1.76微米波段脉冲激光。
具体地，步骤S4中，利用钒酸盐晶体的拉曼变频作用及锁模作用，以及泵浦端腔镜3和输出镜6的作用，将所述1.76微米波段脉冲激光转变为2.1微米波段脉冲激光。
具体地，所述泵浦光的波长为808纳米。泵浦端腔镜3可以为平面镜、平凸镜或平凹镜，镀对808nm波段脉冲激光高透和对1.34微米、1.52微米、1.76微米及2.1微米波段脉冲激光高反的介质膜；输出镜6可以为平面镜、平凸镜或平凹镜，镀反射1.34微米、1.52微米及1.76微米波段脉冲激光、同时部分反射、部分透过2.1微米波段脉冲激光的介质膜。所述掺杂钕离子的钒酸盐晶体可以为Nd:YVO4晶体或Nd:GdVO4晶体。
具体地，步骤S2中的Nd:YVO4晶体或Nd:GdVO4晶体以1.34微米波段脉冲激光为基频光，利用钒酸盐晶体的890cm-1左右的三次拉曼变频作用及锁模作用，产生2.1微米波段脉冲激光。
本实施例提供的一种2.1微米波段脉冲激光的产生方法，由于避免了可饱和吸收体光损伤阈值较低的局限性，从而可以获得高功率、高能量的2.1微米波段超短脉冲激光。
本实施例还提供了上述2.1微米波段脉冲激光的应用，所述2.1微米波段脉冲激光在军事、医学、环境监测、材料加工、远程通信或计量学等领域具有广泛而重要的应用。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种2.1微米波段脉冲激光的产生装置，包括半导体泵浦脉冲激光器、泵浦光聚焦耦合系统及谐振腔，其特征在于，所述谐振腔包括端面泵浦激光介质，所述端面泵浦激光介质为掺杂钕离子的钒酸盐晶体；所述半导体泵浦脉冲激光器产生的泵浦光经所述泵浦光聚焦耦合系统耦合进入所述掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段脉冲激光，所述1.34微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体对所述1.34微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光，所述1.52微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体再对所述1.52微米波段脉冲激光进行拉曼变频作用及锁模作用，产生1.76微米波段脉冲激光，所述1.76微米波段脉冲激光在所述谐振腔内震荡；所述钒酸盐晶体对所述1.76微米波段脉冲激光进行拉曼变频作用及锁模作用，输出2.1微米波段脉冲激光。
  2. 如权利要求1所述的产生装置，其特征在于，所述谐振腔还包括泵浦端腔镜，所述泵浦端腔镜位于所述泵浦光聚焦耦合系统和所述端面泵浦激光介质之间，用于反射1.34微米、1.52微米、1.76微米及2.1微米波段的脉冲激光、同时透过808纳米波段的泵浦光。
  3. 如权利要求2所述的产生装置，其特征在于，所述谐振腔还包括输出镜，用于反射1.34微米、1.52微米及1.76微米波段、同时反射及透过2.1微米波段的脉冲激光。
  4. 如权利要求1所述的产生装置，其特征在于，所述谐振腔还包括声光Q开关，所述声光Q开关位于所述端面泵浦激光介质和所述输出镜之间，用于提高所述谐振腔内的脉冲激光功率密度。
  5. 如权利要求1所述的产生装置，其特征在于，所述泵浦光的波长为808纳米。
  6. 如权利要求1所述的产生装置，其特征在于，所述端面泵浦激光介质为Nd:YVO4晶体或Nd:GdVO4晶体。
  7. 一种2.1微米波段脉冲激光的产生方法，其特征在于，包括以下步骤：
    半导体泵浦脉冲激光器产生的泵浦光经泵浦光聚焦耦合系统耦合进入掺杂钕离子的钒酸盐晶体，钕离子通过受激辐射，产生1.34微米波段的脉冲激光；
    以所述1.34微米波段的脉冲激光为基频光，利用钒酸盐晶体的拉曼变频作用及锁模作用，产生1.52微米波段脉冲激光；
    利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.52微米波段脉冲激光转变为1.76微米波段脉冲激光；
    再利用钒酸盐晶体的拉曼变频作用及锁模作用，将所述1.76微米波段脉冲激光转变为2.1微米波段脉冲激光。
  8. 如权利要求7所述的产生方法，其特征在于，所述泵浦光的波长为808纳米。
  9. 如权利要求7所述的产生方法，其特征在于，所述钒酸盐晶体为Nd:YVO4晶体或Nd:GdVO4晶体。
  10. 一种2.1微米波段脉冲激光的应用，其特征在于，将2.1微米波段脉冲激光应用于军事、医学、环境监测、材料加工、远程通信或计量学领域。
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