WO2018023882A1 - Amplitude limit control circuit, device and method - Google Patents

Amplitude limit control circuit, device and method Download PDF

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Publication number
WO2018023882A1
WO2018023882A1 PCT/CN2016/102563 CN2016102563W WO2018023882A1 WO 2018023882 A1 WO2018023882 A1 WO 2018023882A1 CN 2016102563 W CN2016102563 W CN 2016102563W WO 2018023882 A1 WO2018023882 A1 WO 2018023882A1
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WO
WIPO (PCT)
Prior art keywords
capacitor
voltage
switch
resonant
control
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Application number
PCT/CN2016/102563
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French (fr)
Chinese (zh)
Inventor
徐宝华
朱斯忠
何智
许向东
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中惠创智无线供电技术有限公司
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Publication date
Priority claimed from CN201620847019.4U external-priority patent/CN205945253U/en
Priority claimed from CN201620841267.8U external-priority patent/CN205921462U/en
Priority claimed from CN201610634335.8A external-priority patent/CN106059112B/en
Priority claimed from CN201610634350.2A external-priority patent/CN106253494B/en
Application filed by 中惠创智无线供电技术有限公司 filed Critical 中惠创智无线供电技术有限公司
Publication of WO2018023882A1 publication Critical patent/WO2018023882A1/en

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type

Definitions

  • the driven resonant ring has the dual characteristics of receiving energy and transmitting energy.
  • the driven resonant ring is often used as a receiving resonant ring to supply power to the terminal.
  • the driven resonant ring operates in a resonant state, the voltage and current amplitudes in the resonant ring are large and unstable. If the terminal is directly powered, large current and voltage fluctuations will occur, which will have a serious impact on the terminal. It will even burn electrical appliances. Therefore, there is a need for a circuit that controls the amplitude of the driven resonant ring voltage or current to ensure stable operation of the driven resonant ring.
  • the present invention provides a limiting control circuit, apparatus and method for solving the problem of unstable operation of a driven resonant ring.
  • a limiting control circuit includes:
  • the resonant coil and the resonant capacitor are connected in series; two switch ends of the voltage controlled switch are respectively connected to two end points of the resonant capacitor.
  • the voltage controlled switch is a MOSFET tube, and the drain and source of the MOSFET tube are two switch ends.
  • the voltage controlled switch is an IGBT tube, and the collector and the emitter of the IGBT tube are two switch ends.
  • the voltage control switch is a TRIAC tube, and the main electrode T1 and the main electrode T2 of the TRIAC tube are two switch ends.
  • the voltage control switch is a reverse series connection of two IGBT tubes, and the two collectors after the reverse connection of the two IGBT tubes are two switch ends.
  • the voltage controlled switch is in reverse series connection of two MOSFET tubes, and the two drains after the reverse connection of the two MOSFET tubes are two switch ends.
  • the voltage control switch is a reverse series connection of two TRIAC tubes, and the two main electrodes T2 after the reverse connection of the two TRIAC tubes are two switch ends.
  • the method further comprises:
  • first capacitor the first capacitor and the MOSFET tube form a first half-control capacitor
  • One end of the first capacitor is connected to a source of the MOSFET, and the other end of the first capacitor is connected to one end of the resonant capacitor not connected to the resonant coil, and a drain of the MOSFET is A resonant coil and a connection point of the resonant capacitor are connected.
  • the method further comprises:
  • the second capacitor and the IGBT tube form a second half-control capacitor
  • One end of the second capacitor is connected to the emitter of the IGBT tube, and the other end of the second capacitor is connected to one end of the resonant capacitor not connected to the resonant coil, and the collector of the IGBT tube is A resonant coil and a connection point of the resonant capacitor are connected.
  • a limiter control device comprising the above-mentioned limiter control circuit, further comprising:
  • the first driving voltage supply circuit is configured to supply a voltage to the first half control capacitor
  • the first driving voltage supply circuit includes:
  • Rectifier filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
  • the resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the first half-control capacitor are sequentially connected, the isolation A switching power supply is connected in parallel across the filter capacitor.
  • a limiter control device comprising the above-mentioned limiter control circuit, further comprising:
  • the second driving voltage supply circuit is configured to supply a voltage to the second half control capacitor
  • the second driving voltage supply circuit includes:
  • Rectifier filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
  • the resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier, and the second half-control capacitor are sequentially connected, and the isolation A switching power supply is connected in parallel across the filter capacitor.
  • a limiting control method is applied to the above-mentioned limiting control circuit, and the limiting control method includes:
  • the voltage control switch is controlled to be turned on when it is required to provide a stable voltage.
  • the controlling the voltage control switch to be turned on includes:
  • the voltage control switch is controlled to be turned on by inputting a high level and a low level.
  • the controlling the voltage control switch to be turned on includes:
  • the voltage control switch is controlled to be turned on by pulse width modulation.
  • the invention provides a limiting control circuit, device and method, the circuit comprising: a resonant coil, a resonant capacitor and a voltage controlled switch; the resonant coil and the resonant capacitor are connected in series; two switches of the voltage controlled switch The terminals are respectively connected to the two end points of the resonant capacitor.
  • the voltage-controlled switch is controlled to be turned on, and the resonant capacitor is short-circuited.
  • the resonant state of the original circuit is destroyed, which can provide a stable voltage or current, and solves the problem that the driven resonant ring is unstable.
  • FIG. 1 is a circuit diagram of a limiter control circuit according to Embodiment 1 of the present invention.
  • FIG. 2 is a circuit diagram of a limiter control circuit according to Embodiment 2 of the present invention.
  • 3a is a schematic structural view of a three-terminal voltage control switch provided by the present invention.
  • FIG. 3b is a schematic structural diagram of a three-terminal voltage control switch according to the present invention.
  • 3c is a schematic structural view of another three-terminal voltage control switch provided by the present invention.
  • 3d is a schematic structural view of a third three-terminal voltage control switch provided by the present invention.
  • 4a is a schematic structural view of a four-terminal voltage control switch provided by the present invention.
  • 4b is a schematic structural view of a four-terminal voltage control switch according to the present invention.
  • 4c is a schematic structural view of another four-terminal voltage control switch provided by the present invention.
  • 4d is a schematic structural view of a third four-terminal voltage control switch provided by the present invention.
  • FIG. 5 is a circuit diagram of a limiter control circuit according to Embodiment 3 of the present invention.
  • FIG. 6 is a circuit diagram of a limiter control circuit according to Embodiment 4 of the present invention.
  • Figure 7 is a circuit diagram of a limiter control device provided by the present invention.
  • FIG. 8 is a schematic structural diagram of a limiter control circuit according to Embodiment 5 of the present invention.
  • FIG. 9 is a schematic structural diagram of a limiter control circuit according to Embodiment 6 of the present invention.
  • FIG. 10 is a schematic structural diagram of a limiter control circuit according to Embodiment 7 of the present invention.
  • FIG. 11 is a schematic structural diagram of a limiter control circuit according to Embodiment 8 of the present invention.
  • FIG. 12 is a schematic structural diagram of a limiter control circuit according to Embodiment 9 of the present invention.
  • FIG. 13 is a schematic structural diagram of a limiter control circuit according to Embodiment 10 of the present invention.
  • Embodiments of the present invention provide a limiting control circuit, including:
  • the resonant coil and the resonant capacitor are connected in series; the two switch terminals of the voltage controlled switch are respectively connected to the two end points of the resonant capacitor.
  • Figures 1 and 2 illustrate the connection relationship of the components of the limiter control circuit.
  • L1 represents a resonant coil
  • C1 represents a resonant capacitor
  • voltage-controlled switch S1 is a three-terminal voltage-controlled switch
  • an arrow represents a magnetic field.
  • the resonant coil L1 and the resonant capacitor C1 are connected in series to form a driven resonant ring, and the two switching ends of the voltage controlled switch S1 are respectively connected to the two end points of the resonant capacitor C1.
  • the limiter control circuit has three output terminals: A, B, C, where C is the common end of the slave resonant ring; the circuit has two output combinations: AB or AC, and the AB output is from both ends of the series driven ring. The output is output from the non-common terminal; the AC output is output from both ends of the resonant coil L1, and the output terminal includes a common terminal C.
  • L1 represents a resonant coil
  • C1 represents a resonant capacitor
  • voltage-controlled switch S1 is a four-terminal voltage-controlled switch
  • an arrow represents a magnetic field.
  • the resonant coil L1 and the resonant capacitor C1 are connected in series to form a driven resonant ring, and the two switching ends of the voltage controlled switch S1 are respectively connected to the two end points of the resonant capacitor C1.
  • the limiter control circuit has three outputs: A, B, and C, where C is the common end of the slave resonant ring.
  • the circuit has two output combinations: AB or AC.
  • the AB output is output from both ends of the driven resonant ring, that is, from the non-common terminal.
  • the AC output is output from both ends of the resonant coil L1, and the output terminal includes a common terminal C. .
  • the working process is: when the voltage control switch S1 is turned on, the resonant capacitor C1 is short-circuited, and the resonant state of the driven resonant ring is destroyed, the amplitude of the resonant ring is controlled within a certain range, and a stable voltage or current can be output. .
  • the voltage control switch S1 is turned off, the resonant capacitor C1 is not short-circuited and does not destroy the resonance state.
  • the limiter control circuit provided by the invention controls the voltage control switch to be turned on when the stable voltage needs to be supplied, and the resonant capacitor is short-circuited.
  • the resonance state of the original circuit is destroyed and can provide stable
  • the voltage or current solves the problem of unstable operation of the driven resonant ring.
  • the voltage control switch may select different voltage control switches according to specific conditions.
  • the voltage control switch can be an IGBT tube, the collector and the emitter of the IGBT tube are two switch ends; the voltage control switch can be a MOSFET tube, the drain and source of the MOSFET tube are two switch ends; the voltage control switch can be a TRIAC tube, The main electrode T1 and the main electrode T2 of the TRIAC tube are two switch ends; the voltage control switch can be reversely connected in series for two IGBT tubes, and the two collectors after the reverse connection of the two IGBT tubes are two switch ends; The switch can be reversely connected in series for two MOSFET tubes.
  • the two drains of the two MOSFET tubes in reverse series are two switch terminals; the voltage control switch can be reverse series connected for two TRIAC tubes, and the two TRIAC tubes are connected in series after reverse connection.
  • the two main electrodes T2 are two switch terminals.
  • an IGBT Insulated Gate Bipolar Transistor
  • an insulated gate bipolar transistor are composite full-voltage-driven power semiconductor devices composed of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor).
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • the triac TRIAC tube is essentially a bidirectional thyristor. It is developed on the basis of a common thyristor. It can replace not only two thyristors connected in parallel with reverse polarity, but also a single trigger circuit.
  • the collector of the IGBT tube is also referred to as a drain
  • the emitter of the IGBT tube is also referred to as a source
  • the gate of the IGBT tube is also referred to as a gate.
  • the voltage control switch in Fig. 3a is a three-terminal voltage control switch
  • the voltage control switch in Fig. 4a is a four-terminal voltage control switch.
  • the voltage control switch S1 has three ends of 1, 2, and 3, wherein the two ends are the two switch ends, and the one end is the control end.
  • the IGBT tube in Figure 3b has three poles, namely collector C, emitter E and gate G.
  • the MOSFET of Figure 3c also has three poles, namely drain D, gate G and source S.
  • the three poles of the TRIAC tube in Figure 3d are the main electrode T1, the main electrode T2 and the gate G, respectively.
  • the corresponding relationship of the pin position is: 1-G, 2-C, 3-E; when the voltage control switch S1 is a MOSFET tube, the corresponding relationship of the pin position is: 1-G, 2- D, 3-S; when the voltage control switch When S1 is a TRIAC tube, the corresponding relationship of the feet is: 1-G, 2-T2, 3-T1.
  • the voltage control switch S1 has four ends of 1, 2, 3 and 4, wherein 2 and 3 are two switch terminals, and 1, 4 are two control terminals, wherein 4 terminals are used for grounding.
  • the voltage-controlled switch S1 has two IGBT tubes in reverse series or two MOSFET tubes in reverse series or two TRIAC tubes in reverse series.
  • the corresponding relationship of the pins is: 1-G, 2-C, 3-C, 4-E
  • the voltage control switch S1 is When the two MOSFET tubes are connected in series in reverse, referring to FIG. 4c, the corresponding positions of the pins are: 1-G, 2-D, 3-D, 4-S.
  • the voltage control switch S1 is in reverse series connection of two TRIAC tubes, Referring to FIG. 4d, the correspondence between the feet is: 1-G, 2-T2, 3-T2, 4-T1.
  • control terminal 1 is used to control the on/off of the voltage control switch.
  • the voltage control switch S1 is an IGBT tube or a MOSFET tube or a TRIAC tube, or the voltage control switch is two IGBT tubes in reverse series or two MOSFET tubes in reverse series or two TRIAC tubes in reverse series. There are many ways to choose, and you can choose according to different situations.
  • the limiting control circuit when the voltage control switch S1 is a MOSFET, the limiting control circuit further includes:
  • first capacitor the first capacitor and the MOSFET tube form a first half-control capacitor
  • One end of the first capacitor is connected to the source of the MOSFET, the other end of the first capacitor is connected to one end of the resonant capacitor to which the resonant coil is not connected, and the drain of the MOSFET is connected to the connection point of the resonant coil and the resonant capacitor.
  • the limiting control circuit further includes: a second capacitor; the second capacitor and the IGBT tube form a second half control capacitor;
  • One end of the second capacitor is connected to the emitter of the IGBT tube, and the other end of the second capacitor is connected to one end of the resonant capacitor to which the resonant coil is not connected, and the collector of the IGBT tube is connected to the connection point of the resonant coil and the resonant capacitor.
  • the voltage control switch S1 is a MOSFET
  • a limiting control device is provided.
  • the method further includes:
  • a first driving voltage supply circuit for supplying a voltage to the first half control capacitor
  • the first driving voltage supply circuit includes:
  • Rectifier filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
  • One end of the non-connecting point of the resonant coil, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the first half-control capacitor are sequentially connected, and the isolating switching power supply is connected in parallel at both ends of the filter capacitor.
  • a limiting control device when the voltage control switch S1 is an IGBT tube, a limiting control device is provided.
  • the method further includes:
  • a second driving voltage supply circuit for supplying a voltage to the second half control capacitor
  • the second driving voltage supply circuit includes:
  • Rectifier filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
  • One end of the non-connecting point of the resonant coil, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the second half-control capacitor are sequentially connected, and the isolating switching power supply is connected in parallel at both ends of the filter capacitor.
  • the voltage control switch S1 is an IGBT tube or a MOSFET tube
  • the voltage control switch may also be referred to as a switch tube.
  • FIG. 5 shows a case where the resonant coil and the resonant capacitor are connected in series, and the switching transistor is a MOSFET.
  • L1 is a resonant coil
  • C1 is a resonant capacitor
  • L1 and C1 are connected in series to form a driven resonant ring
  • the first capacitor C2 is connected in series with the MOSFET 101 to form a first half-controlled capacitor
  • the first half-controlled capacitor is connected in parallel with the resonant capacitor C1.
  • a and B are output terminals, and arrows indicate magnetic fields.
  • the MOSFET 101 When the gate of the MOSFET 101 is at a high level, the MOSFET 101 is turned on, since the internal resistance of the MOSFET 101 is small, close to 0, at this time, the capacitor C2 is connected in parallel with the resonant capacitor C1, and the driven resonant ring is optimal. The resonance state is destroyed, the amplitude is reduced or even completely stopped; when the gate When it is low, the MOSFET 101 is turned off, and since the MOSFET 101 is open, the capacitor C2 is inactive.
  • Fig. 6 shows a case where the resonant coil and the resonant capacitor are connected in series, and the voltage controlled switch is an IGBT tube.
  • L1 is a resonant coil
  • C1 is a resonant capacitor
  • L1 and C1 are connected in series to form a driven resonant ring
  • a second capacitor C3 is connected in series with the IGBT tube 102 to form a second half-controlled capacitor
  • the second half-controlled capacitor is connected in parallel with the resonant capacitor C1.
  • a and B are output terminals, and arrows indicate magnetic fields. The specific working process is the same as that of FIG. 1 and will not be described here.
  • the circuit diagram of the limiter control device is shown in Fig. 7. Specifically, the resonant capacitor C1 and the resonant coil L1 are connected in series to form a driven resonant ring, 103 is a rectifier, C4 is a filter capacitor, 104 is an isolated switching power supply, resistors R1 and R2 are connected in series to form a voltage sampling circuit, 105 is a comparator, 106 is The driver amplifier, capacitor C2 and MOSFET 101 form the first half-control capacitor, Vd represents the output voltage, Vreg is the reference voltage, R3 is the current limiting resistor, and R4 is the discharge resistor.
  • the output end of the driven resonant ring is filtered by the rectifier 103 and filtered by the filter capacitor C4 to obtain a high voltage direct current.
  • the isolated switching power supply 104 is input to a switching power supply, and the high voltage direct current is voltage-converted to obtain the DC voltage required for the gate of the MOSFET.
  • the DC high voltage is subjected to voltage sampling by a voltage sampling circuit composed of R1 and R2, and then sent to the comparator 105 for voltage comparison. If the detected voltage exceeds the set voltage, the comparator 105 outputs a high level.
  • the high level is then amplified by the driver amplifier 106, and then sent to the gate of the MOSFET through the resistor R3.
  • the MOSFET is turned on, the first half control capacitor is effective, and the complete resonance of the slave resonant ring is destroyed. Can provide a stable voltage or current.
  • the current limiting resistor R3 and the discharging resistor R4 protect the MOSFET.
  • the first half-control capacitor is composed of the first capacitor and the MOSFET tube
  • the second half-control capacitor is composed of the second capacitor and the IGBT tube
  • the MOSFET tube and the IGBT tube are in operation.
  • One end must be connected to "ground”, which is the lowest potential reference point of a circuit, not the real ground.
  • ground is to facilitate the effective operation of the MOSFET and IGBT tubes.
  • the limiting control circuit provided in this embodiment controls the MOSFET tube or the IGBT tube to be turned on when a stable voltage or current is required to be supplied, thereby controlling the conduction of the first half-controlled capacitor or the second half-controlled capacitor, the resonant coil and the resonant capacitor.
  • the resonant state is destroyed, and a stable voltage or current can be provided, which solves the problem that the driven resonant ring is unstable.
  • the first half-control capacitor or the second half-control capacitor can be supplied with a suitable voltage, and the driven resonant ring can be controlled by the first half-controlled capacitor or the second half-controlled capacitor being turned on and off. The state of resonance.
  • a limiting control method is provided, which is applied to the above-mentioned limiting control circuit, and the limiting control method includes:
  • the control voltage control switch is turned on.
  • control voltage control switch is turned on, and specifically includes: controlling the voltage control switch to be turned on by adopting an input high and low level mode or a pulse width modulation manner.
  • control terminal 1 when the control terminal 1 inputs a high level, the two switch terminals are turned on, the on-resistance is zero or close to zero, the resonant capacitor is short-circuited, the original resonance state is changed, and the amplitude is decreased.
  • control terminal 1 When the control terminal 1 is low level, the two switch terminals are short-circuited, and the open circuit resistance is infinite. The resonant capacitor is effective, restores the original resonant state, and the amplitude rises.
  • L1 denotes a resonance coil
  • C1 denotes a resonance capacitor
  • resonance coil L1 and resonance capacitor C1 constitute a driven resonance ring.
  • S1 represents the voltage control switch.
  • the voltage control switch S1 is a three-terminal voltage control switch
  • 103 represents a rectifier, which is used to convert alternating current into direct current
  • C4 is a filter capacitor
  • 107 represents a direct current DC2DC power supply or a switching power supply SMPS, which is used for voltage
  • the control switch S1 provides a driving voltage
  • the resistors R1 and R2 constitute a voltage sampling circuit
  • 108 represents a voltage comparator or a pulse width modulation PWM generator for providing a high-low level or PWM signal for the voltage-controlled switch S1, and Q1 and Q2 constitute a driving amplifier.
  • R3 is a current limiting resistor
  • R4 is a discharging resistor
  • Vd is an output voltage.
  • the AB output terminal is used.
  • the AB output terminal outputs alternating current, which is rectified by the rectifier 103 and filtered by the filter capacitor C4 to obtain a DC voltage.
  • the DC voltage reaches a certain value, at this time, if the voltage is 108, the voltage is 108.
  • the comparator, the voltage comparator 108 outputs a high level, is amplified by the driver amplifier 106, and is output to the control terminal of the voltage control switch S1, at which time the voltage control is turned on.
  • the duty ratio of the PWM signal is proportional to the voltage at the input terminal.
  • the duty ratio of the PWM signal increases, and the on-time of the voltage-controlled switch S1.
  • the time of the deceleration of the slave resonant ring is prolonged, and the voltage on the filter capacitor C4 is decreased.
  • the duty ratio of the PWM signal output by the PWM generator 108 decreases, and the slave resonant ring stops vibrating. The time is shortened, the voltage on the filter capacitor C4 rises, and the cycle is such that the voltage on C4 is maintained at the specified value.
  • the resistors R1, R2 and R5 constitute a voltage sampling circuit, and the voltage control switch S1 is a four-terminal voltage control switch.
  • the rectifier 103 employs full-wave rectification.
  • the rectifier 103 is full-wave rectified, and the voltage-controlled switch S1 is a four-terminal voltage-controlled switch.
  • the output is the A-C output and the rectifier 103 is full-wave rectified.
  • the rectifier 103 is full-wave rectified, and the voltage control switch S1 is a four-terminal voltage control switch.
  • the "ground” is set for the effective operation of the voltage control switch S1, that is, the three ends of the three-terminal voltage control switch are grounded, and the four ends of the four-terminal voltage control switch are grounded, one end is grounded
  • the voltages are: 10-18VDC for the IGBT tube, 5-10VDC for the MOSFET, and 1-5VDC for the TRIAC tube. In order to be able to achieve the above voltage, in Figures 8 to 13, the places where the ground terminal symbols are drawn are grounded.

Abstract

An amplitude limit control circuit, device and method. The circuit comprises a resonant coil (L1), a resonant capacitor (C1), and a voltage controlled switch (S1). The resonant coil (L1) and the resonant capacitor (C1) are connected in series. Two switching ends of the voltage controlled switch (S1) are connected to two end points of the resonant capacitor (C1) respectively. When a stable voltage needs to be provided, the voltage controlled switch (S1) is controlled to be turned on, and the resonant capacitor (C1) is shorted. The previous resonant state of the circuit is damaged, and a stable voltage or current can be provided, so that the problem that a driven resonant ring works unstably is resolved.

Description

一种限幅控制电路、装置及方法Limiting control circuit, device and method 技术领域Technical field
本申请要求于2016年8月4日提交中国专利局、申请号为201610634350.2、发明名称为“一种限幅控制电路、装置及方法”的国内申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the domestic application filed on August 4, 2016, the Chinese Patent Office, the application number is 201610634350.2, and the invention name is "a limit control circuit, device and method", the entire contents of which are incorporated herein by reference. In the application.
本申请要求于2016年8月4日提交中国专利局、申请号为201620841267.8、发明名称为“一种限幅控制电路及装置”的国内申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the domestic application filed on August 4, 2016, the Chinese Patent Application No. 201620841267.8, entitled "A Limit Control Circuit and Device", the entire contents of which are incorporated herein by reference. .
本申请要求于2016年8月4日提交中国专利局、申请号为201610634335.8、发明名称为“一种限幅控制电路及方法”的国内申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the domestic application filed on August 4, 2016 by the Chinese Patent Office, Application No. 201610634335.8, entitled "A Limiting Control Circuit and Method", the entire contents of which are incorporated herein by reference. .
本申请要求于2016年8月4日提交中国专利局、申请号为201620847019.4、发明名称为“一种限幅控制电路”的国内申请的优先权,其全部内容通过引用结合在本申请中。The present application claims priority to the Chinese Patent Application, filed on Aug. 4, 2016, Serial No. No. No. No. No. No. No. No. No. No. No. No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No No
背景技术Background technique
从动谐振环具有接受能量和发射能量的双重特性,在无线供电的终端,从动谐振环常当作接收谐振环使用,为终端电器供电。The driven resonant ring has the dual characteristics of receiving energy and transmitting energy. In the wirelessly powered terminal, the driven resonant ring is often used as a receiving resonant ring to supply power to the terminal.
由于从动谐振环工作于谐振状态,谐振环内的电压和电流振幅很大,而且不稳定,如果直接给终端电器供电,会产生巨大的电流和电压波动,会给终端电器带来严重的影响,甚至会烧毁电器。因此,亟需一种控制从动谐振环电压或电流的振幅,保证从动谐振环工作稳定的电路。Since the driven resonant ring operates in a resonant state, the voltage and current amplitudes in the resonant ring are large and unstable. If the terminal is directly powered, large current and voltage fluctuations will occur, which will have a serious impact on the terminal. It will even burn electrical appliances. Therefore, there is a need for a circuit that controls the amplitude of the driven resonant ring voltage or current to ensure stable operation of the driven resonant ring.
发明内容Summary of the invention
有鉴于此,本发明提供一种限幅控制电路、装置及方法,以解决从动谐振环工作不稳定的问题。In view of this, the present invention provides a limiting control circuit, apparatus and method for solving the problem of unstable operation of a driven resonant ring.
为了实现上述目的,本发明实施例提供了以下技术方案: In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
一种限幅控制电路,包括:A limiting control circuit includes:
谐振线圈、谐振电容和压控开关;Resonant coil, resonant capacitor and voltage controlled switch;
所述谐振线圈和所述谐振电容串联;所述压控开关的两个开关端分别与所述谐振电容的两个端点连接。The resonant coil and the resonant capacitor are connected in series; two switch ends of the voltage controlled switch are respectively connected to two end points of the resonant capacitor.
优选地,所述压控开关为MOSFET管,所述MOSFET管的漏极和源极为两个开关端。Preferably, the voltage controlled switch is a MOSFET tube, and the drain and source of the MOSFET tube are two switch ends.
优选地,所述压控开关为IGBT管,所述IGBT管的集电极和发射极为两个开关端。Preferably, the voltage controlled switch is an IGBT tube, and the collector and the emitter of the IGBT tube are two switch ends.
优选地,所述压控开关为TRIAC管,所述TRIAC管的主电极T1和主电极T2为两个开关端。Preferably, the voltage control switch is a TRIAC tube, and the main electrode T1 and the main electrode T2 of the TRIAC tube are two switch ends.
优选地,所述压控开关为两个IGBT管反向串联,所述两个IGBT管反向串联之后的两个集电极为两个开关端。Preferably, the voltage control switch is a reverse series connection of two IGBT tubes, and the two collectors after the reverse connection of the two IGBT tubes are two switch ends.
优选地,所述压控开关为两个MOSFET管反向串联,所述两个MOSFET管反向串联之后的两个漏极为两个开关端。Preferably, the voltage controlled switch is in reverse series connection of two MOSFET tubes, and the two drains after the reverse connection of the two MOSFET tubes are two switch ends.
优选地,所述压控开关为两个TRIAC管反向串联,所述两个TRIAC管反向串联之后的两个主电极T2为两个开关端。Preferably, the voltage control switch is a reverse series connection of two TRIAC tubes, and the two main electrodes T2 after the reverse connection of the two TRIAC tubes are two switch ends.
优选地,还包括:Preferably, the method further comprises:
第一电容;所述第一电容与所述MOSFET管组成第一半控电容;a first capacitor; the first capacitor and the MOSFET tube form a first half-control capacitor;
所述第一电容的一端与所述MOSFET管的源极连接,所述第一电容的另一端与所述谐振电容未连接所述谐振线圈的一端连接,所述MOSFET管的漏极与所述谐振线圈、所述谐振电容的连接点连接。One end of the first capacitor is connected to a source of the MOSFET, and the other end of the first capacitor is connected to one end of the resonant capacitor not connected to the resonant coil, and a drain of the MOSFET is A resonant coil and a connection point of the resonant capacitor are connected.
优选地,还包括:Preferably, the method further comprises:
第二电容;所述第二电容与所述IGBT管组成第二半控电容;a second capacitor; the second capacitor and the IGBT tube form a second half-control capacitor;
所述第二电容的一端与所述IGBT管的发射极连接,所述第二电容的另一端与所述谐振电容未连接所述谐振线圈的一端连接,所述IGBT管的集电极与所述谐振线圈、所述谐振电容的连接点连接。One end of the second capacitor is connected to the emitter of the IGBT tube, and the other end of the second capacitor is connected to one end of the resonant capacitor not connected to the resonant coil, and the collector of the IGBT tube is A resonant coil and a connection point of the resonant capacitor are connected.
一种限幅控制装置,包括上述的限幅控制电路,还包括:A limiter control device, comprising the above-mentioned limiter control circuit, further comprising:
第一驱动电压供给电路;a first driving voltage supply circuit;
所述第一驱动电压供给电路,用于为所述第一半控电容提供电压; The first driving voltage supply circuit is configured to supply a voltage to the first half control capacitor;
所述第一驱动电压供给电路包括:The first driving voltage supply circuit includes:
整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
所述谐振线圈非所述连接点的一端、所述整流器、所述滤波电容、所述电压采样电路、所述比较器、所述驱动放大器和所述第一半控电容依次连接,所述隔离开关电源并联在所述滤波电容的两端。The resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the first half-control capacitor are sequentially connected, the isolation A switching power supply is connected in parallel across the filter capacitor.
一种限幅控制装置,包括上述的限幅控制电路,还包括:A limiter control device, comprising the above-mentioned limiter control circuit, further comprising:
第二驱动电压供给电路;a second driving voltage supply circuit;
所述第二驱动电压供给电路,用于为所述第二半控电容提供电压;The second driving voltage supply circuit is configured to supply a voltage to the second half control capacitor;
所述第二驱动电压供给电路包括:The second driving voltage supply circuit includes:
整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
所述谐振线圈非所述连接点的一端、所述整流器、所述滤波电容、所述电压采样电路、所述比较器、所述驱动放大器和所述第二半控电容依次连接,所述隔离开关电源并联在所述滤波电容的两端。The resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier, and the second half-control capacitor are sequentially connected, and the isolation A switching power supply is connected in parallel across the filter capacitor.
一种限幅控制方法,应用于上述的限幅控制电路,所述限幅控制方法包括:A limiting control method is applied to the above-mentioned limiting control circuit, and the limiting control method includes:
当需要提供稳定的电压时,控制所述压控开关导通。The voltage control switch is controlled to be turned on when it is required to provide a stable voltage.
优选地,所述控制所述压控开关导通,具体包括:Preferably, the controlling the voltage control switch to be turned on includes:
采用输入高低电平的方式控制所述压控开关导通。The voltage control switch is controlled to be turned on by inputting a high level and a low level.
优选地,所述控制所述压控开关导通,具体包括:Preferably, the controlling the voltage control switch to be turned on includes:
采用脉冲宽度调制的方式控制所述压控开关导通。The voltage control switch is controlled to be turned on by pulse width modulation.
本发明提供了一种限幅控制电路、装置及方法,所述电路包括:谐振线圈、谐振电容和压控开关;所述谐振线圈和所述谐振电容串联;所述压控开关的两个开关端分别与所述谐振电容的两个端点连接。当需要提供稳定的电压时,控制所述压控开关导通,所述谐振电容被短路。原先电路的谐振状态被破坏,能够提供稳定的电压或电流,解决了从动谐振环工作不稳定的问题。 The invention provides a limiting control circuit, device and method, the circuit comprising: a resonant coil, a resonant capacitor and a voltage controlled switch; the resonant coil and the resonant capacitor are connected in series; two switches of the voltage controlled switch The terminals are respectively connected to the two end points of the resonant capacitor. When it is desired to provide a stable voltage, the voltage-controlled switch is controlled to be turned on, and the resonant capacitor is short-circuited. The resonant state of the original circuit is destroyed, which can provide a stable voltage or current, and solves the problem that the driven resonant ring is unstable.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any creative work.
图1为本发明实施例一提供的限幅控制电路的电路图;1 is a circuit diagram of a limiter control circuit according to Embodiment 1 of the present invention;
图2为本发明实施例二提供的限幅控制电路的电路图;2 is a circuit diagram of a limiter control circuit according to Embodiment 2 of the present invention;
图3a为本发明提供的三端压控开关的结构示意图;3a is a schematic structural view of a three-terminal voltage control switch provided by the present invention;
图3b为本发明提供的一种三端压控开关的结构示意图;FIG. 3b is a schematic structural diagram of a three-terminal voltage control switch according to the present invention; FIG.
图3c为本发明提供的另一种三端压控开关的结构示意图;3c is a schematic structural view of another three-terminal voltage control switch provided by the present invention;
图3d为本发明提供的第三种三端压控开关的结构示意图;3d is a schematic structural view of a third three-terminal voltage control switch provided by the present invention;
图4a为本发明提供的四端压控开关的结构示意图;4a is a schematic structural view of a four-terminal voltage control switch provided by the present invention;
图4b为本发明提供的一种四端压控开关的结构示意图;4b is a schematic structural view of a four-terminal voltage control switch according to the present invention;
图4c为本发明提供的另一种四端压控开关的结构示意图;4c is a schematic structural view of another four-terminal voltage control switch provided by the present invention;
图4d为本发明提供的第三种四端压控开关的结构示意图;4d is a schematic structural view of a third four-terminal voltage control switch provided by the present invention;
图5为本发明实施例三提供的限幅控制电路的电路图;5 is a circuit diagram of a limiter control circuit according to Embodiment 3 of the present invention;
图6为本发明实施例四提供的限幅控制电路的电路图;6 is a circuit diagram of a limiter control circuit according to Embodiment 4 of the present invention;
图7为本发明提供的限幅控制装置的电路图;Figure 7 is a circuit diagram of a limiter control device provided by the present invention;
图8为本发明实施例五提供的限幅控制电路的结构示意图;8 is a schematic structural diagram of a limiter control circuit according to Embodiment 5 of the present invention;
图9为本发明实施例六提供的限幅控制电路的结构示意图;9 is a schematic structural diagram of a limiter control circuit according to Embodiment 6 of the present invention;
图10为本发明实施例七提供的限幅控制电路的结构示意图;10 is a schematic structural diagram of a limiter control circuit according to Embodiment 7 of the present invention;
图11为本发明实施例八提供的限幅控制电路的结构示意图;11 is a schematic structural diagram of a limiter control circuit according to Embodiment 8 of the present invention;
图12为本发明实施例九提供的限幅控制电路的结构示意图;12 is a schematic structural diagram of a limiter control circuit according to Embodiment 9 of the present invention;
图13为本发明实施例十提供的限幅控制电路的结构示意图。FIG. 13 is a schematic structural diagram of a limiter control circuit according to Embodiment 10 of the present invention.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进 行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solution in the embodiment of the present invention will be further described below with reference to the accompanying drawings in the embodiments of the present invention. The invention is described in a clear and complete manner, and it is obvious that the described embodiments are only a part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
本发明实施例提供了一种限幅控制电路,包括:Embodiments of the present invention provide a limiting control circuit, including:
谐振线圈、谐振电容和压控开关;Resonant coil, resonant capacitor and voltage controlled switch;
谐振线圈和谐振电容串联;压控开关的两个开关端分别与谐振电容的两个端点连接。The resonant coil and the resonant capacitor are connected in series; the two switch terminals of the voltage controlled switch are respectively connected to the two end points of the resonant capacitor.
参照图1和图2,图1和图2介绍了限幅控制电路的元件的连接关系。Referring to Figures 1 and 2, Figures 1 and 2 illustrate the connection relationship of the components of the limiter control circuit.
图1中,L1表示谐振线圈,C1表示谐振电容,压控开关S1为三端压控开关,箭头表示磁场。谐振线圈L1与谐振电容C1串联组成一个从动谐振环,压控开关S1的两个开关端与谐振电容C1的两个端点分别连接。In Fig. 1, L1 represents a resonant coil, C1 represents a resonant capacitor, voltage-controlled switch S1 is a three-terminal voltage-controlled switch, and an arrow represents a magnetic field. The resonant coil L1 and the resonant capacitor C1 are connected in series to form a driven resonant ring, and the two switching ends of the voltage controlled switch S1 are respectively connected to the two end points of the resonant capacitor C1.
限幅控制电路有三个输出端:A、B、C,其中C为从动谐振环的公共端;电路共有两种输出组合:A-B或A-C,A-B输出是从串联的从动谐振环的两端输出,即从非公共端输出;A-C输出是从谐振线圈L1的两端输出,输出端包含一个公共端C。The limiter control circuit has three output terminals: A, B, C, where C is the common end of the slave resonant ring; the circuit has two output combinations: AB or AC, and the AB output is from both ends of the series driven ring. The output is output from the non-common terminal; the AC output is output from both ends of the resonant coil L1, and the output terminal includes a common terminal C.
图2中,L1表示谐振线圈,C1表示谐振电容,压控开关S1为四端压控开关,箭头表示磁场。谐振线圈L1与谐振电容C1串联组成一个从动谐振环,压控开关S1的两个开关端与谐振电容C1的两个端点分别连接。In Fig. 2, L1 represents a resonant coil, C1 represents a resonant capacitor, voltage-controlled switch S1 is a four-terminal voltage-controlled switch, and an arrow represents a magnetic field. The resonant coil L1 and the resonant capacitor C1 are connected in series to form a driven resonant ring, and the two switching ends of the voltage controlled switch S1 are respectively connected to the two end points of the resonant capacitor C1.
限幅控制电路有三个输出端:A、B、C,其中C为从动谐振环的公共端。电路共有两种输出组合:A-B或A-C,A-B输出是从从动谐振环的两端输出,即从非公共端输出;A-C输出是从谐振线圈L1的两端输出,输出端包含一个公共端C。The limiter control circuit has three outputs: A, B, and C, where C is the common end of the slave resonant ring. The circuit has two output combinations: AB or AC. The AB output is output from both ends of the driven resonant ring, that is, from the non-common terminal. The AC output is output from both ends of the resonant coil L1, and the output terminal includes a common terminal C. .
工作过程为:当压控开关S1导通时,谐振电容C1被短路,此时从动谐振环的谐振状态被破坏,谐振环的振幅就被控制在一定范围内,能够输出稳定的电压或电流。当压控开关S1断开时,谐振电容C1不被短路,不会破坏谐振状态。The working process is: when the voltage control switch S1 is turned on, the resonant capacitor C1 is short-circuited, and the resonant state of the driven resonant ring is destroyed, the amplitude of the resonant ring is controlled within a certain range, and a stable voltage or current can be output. . When the voltage control switch S1 is turned off, the resonant capacitor C1 is not short-circuited and does not destroy the resonance state.
本发明提供的限幅控制电路,当需要提供稳定的电压时,控制压控开关导通,谐振电容被短路。原先电路的谐振状态被破坏,能够提供稳定的 电压或电流,解决了从动谐振环工作不稳定的问题。The limiter control circuit provided by the invention controls the voltage control switch to be turned on when the stable voltage needs to be supplied, and the resonant capacitor is short-circuited. The resonance state of the original circuit is destroyed and can provide stable The voltage or current solves the problem of unstable operation of the driven resonant ring.
可选的,本发明的另一实施例中,压控开关可以根据具体情况选择不同的压控开关。压控开关可为IGBT管,IGBT管的集电极和发射极为两个开关端;压控开关可为MOSFET管,MOSFET管的漏极和源极为两个开关端;压控开关可为TRIAC管,TRIAC管的主电极T1和主电极T2为两个开关端;压控开关可为两个IGBT管反向串联,两个IGBT管反向串联之后的两个集电极为两个开关端;压控开关可为两个MOSFET管反向串联,两个MOSFET管反向串联之后的两个漏极为两个开关端;压控开关可为两个TRIAC管反向串联,两个TRIAC管反向串联之后的两个主电极T2为两个开关端。Optionally, in another embodiment of the present invention, the voltage control switch may select different voltage control switches according to specific conditions. The voltage control switch can be an IGBT tube, the collector and the emitter of the IGBT tube are two switch ends; the voltage control switch can be a MOSFET tube, the drain and source of the MOSFET tube are two switch ends; the voltage control switch can be a TRIAC tube, The main electrode T1 and the main electrode T2 of the TRIAC tube are two switch ends; the voltage control switch can be reversely connected in series for two IGBT tubes, and the two collectors after the reverse connection of the two IGBT tubes are two switch ends; The switch can be reversely connected in series for two MOSFET tubes. The two drains of the two MOSFET tubes in reverse series are two switch terminals; the voltage control switch can be reverse series connected for two TRIAC tubes, and the two TRIAC tubes are connected in series after reverse connection. The two main electrodes T2 are two switch terminals.
其中,IGBT管(Insulated Gate Bipolar Transistor),绝缘栅双极型晶体管,是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件。MOSFET管(Metal-Oxide-Semiconductor Field-Effect Transistor),金属-氧化物半导体场效应晶体管,是一种可以广泛使用在模拟电路与数字电路的场效晶体管。三端双向交流开关TRIAC管实质上是双向晶闸管,它是在普通晶闸管的基础上发展起来的,它不仅能代替两只反极性并联的晶闸管,而且仅用一个触发电路。Among them, an IGBT (Insulated Gate Bipolar Transistor) and an insulated gate bipolar transistor are composite full-voltage-driven power semiconductor devices composed of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor). MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a metal-oxide semiconductor field effect transistor, is a field effect transistor that can be widely used in analog circuits and digital circuits. The triac TRIAC tube is essentially a bidirectional thyristor. It is developed on the basis of a common thyristor. It can replace not only two thyristors connected in parallel with reverse polarity, but also a single trigger circuit.
需要说明的是,IGBT管的集电极也称为漏极,IGBT管的发射极也称为源极,IGBT管的门极也称为栅极。It should be noted that the collector of the IGBT tube is also referred to as a drain, the emitter of the IGBT tube is also referred to as a source, and the gate of the IGBT tube is also referred to as a gate.
为了能够使本领域的技术人员更加清楚的了解本发明中的压控开关,请参照图1、图2、图3a、图3b、图3c、图3d、图4a、图4b、图4c和图4d。其中,图3a中的压控开关为三端压控开关,图4a中的压控开关为四端压控开关。In order to enable those skilled in the art to more clearly understand the voltage control switch of the present invention, please refer to FIG. 1, FIG. 2, FIG. 3a, FIG. 3b, FIG. 3c, FIG. 3d, FIG. 4a, FIG. 4b, FIG. 4d. Among them, the voltage control switch in Fig. 3a is a three-terminal voltage control switch, and the voltage control switch in Fig. 4a is a four-terminal voltage control switch.
图3a中压控开关S1共有1、2、3三个端,其中2端和3端是两个开关端,1端为控制端。图3b中IGBT管共有三个极,分别为集电极C、发射极E和门极G。图3c中MOSFET管也有三个极,分别为漏极D、栅极G和源极S,图3d中TRIAC管的三个极分别为主电极T1、主电极T2和栅极G。In Fig. 3a, the voltage control switch S1 has three ends of 1, 2, and 3, wherein the two ends are the two switch ends, and the one end is the control end. The IGBT tube in Figure 3b has three poles, namely collector C, emitter E and gate G. The MOSFET of Figure 3c also has three poles, namely drain D, gate G and source S. The three poles of the TRIAC tube in Figure 3d are the main electrode T1, the main electrode T2 and the gate G, respectively.
当压控开关S1为IGBT管时,脚位对应关系为:1-G、2-C、3-E;当压控开关S1为MOSFET管时,脚位对应关系为:1-G、2-D、3-S;当压控开关 S1为TRIAC管时,脚位对应关系为:1-G、2-T2、3-T1。When the voltage control switch S1 is an IGBT tube, the corresponding relationship of the pin position is: 1-G, 2-C, 3-E; when the voltage control switch S1 is a MOSFET tube, the corresponding relationship of the pin position is: 1-G, 2- D, 3-S; when the voltage control switch When S1 is a TRIAC tube, the corresponding relationship of the feet is: 1-G, 2-T2, 3-T1.
图4a中压控开关S1共有1、2、3、4四个端,其中,2、3为两个开关端,1、4为两个控制端,其中,4端用来接地。压控开关S1为两个IGBT管反向串联或两个MOSFET管反向串联或两个TRIAC管反向串联。In Fig. 4a, the voltage control switch S1 has four ends of 1, 2, 3 and 4, wherein 2 and 3 are two switch terminals, and 1, 4 are two control terminals, wherein 4 terminals are used for grounding. The voltage-controlled switch S1 has two IGBT tubes in reverse series or two MOSFET tubes in reverse series or two TRIAC tubes in reverse series.
具体的,当压控开关S1为两个IGBT管反向串联时,参照图4b,脚位对应关系为:1-G、2-C、3-C、4-E,当压控开关S1为两个MOSFET管反向串联时,参照图4c,脚位对应关系为:1-G、2-D、3-D、4-S,当压控开关S1为两个TRIAC管反向串联时,参照图4d,脚位对应关系为:1-G、2-T2、3-T2、4-T1。Specifically, when the voltage control switch S1 is in reverse series connection of two IGBT tubes, referring to FIG. 4b, the corresponding relationship of the pins is: 1-G, 2-C, 3-C, 4-E, when the voltage control switch S1 is When the two MOSFET tubes are connected in series in reverse, referring to FIG. 4c, the corresponding positions of the pins are: 1-G, 2-D, 3-D, 4-S. When the voltage control switch S1 is in reverse series connection of two TRIAC tubes, Referring to FIG. 4d, the correspondence between the feet is: 1-G, 2-T2, 3-T2, 4-T1.
需要说明的是,不管是三端压控开关,还是四端压控开关,控制端1用来控制压控开关的通断。It should be noted that, whether it is a three-terminal voltage control switch or a four-terminal voltage control switch, the control terminal 1 is used to control the on/off of the voltage control switch.
本实施例中,压控开关S1为IGBT管或MOSFET管或TRIAC管,或者压控开关为两个IGBT管反向串联或两个MOSFET管反向串联或两个TRIAC管反向串联。选择方式较多,可以根据不同的情况进行选择。In this embodiment, the voltage control switch S1 is an IGBT tube or a MOSFET tube or a TRIAC tube, or the voltage control switch is two IGBT tubes in reverse series or two MOSFET tubes in reverse series or two TRIAC tubes in reverse series. There are many ways to choose, and you can choose according to different situations.
可选的,本发明的另一实施例中,当压控开关S1为MOSFET管时,限幅控制电路还包括:Optionally, in another embodiment of the present invention, when the voltage control switch S1 is a MOSFET, the limiting control circuit further includes:
第一电容;第一电容与MOSFET管组成第一半控电容;a first capacitor; the first capacitor and the MOSFET tube form a first half-control capacitor;
第一电容的一端与MOSFET管的源极连接,第一电容的另一端与谐振电容未连接谐振线圈的一端连接,MOSFET管的漏极与谐振线圈、谐振电容的连接点连接。One end of the first capacitor is connected to the source of the MOSFET, the other end of the first capacitor is connected to one end of the resonant capacitor to which the resonant coil is not connected, and the drain of the MOSFET is connected to the connection point of the resonant coil and the resonant capacitor.
当压控开关S1为IGBT管时,限幅控制电路还包括:第二电容;第二电容与IGBT管组成第二半控电容;When the voltage control switch S1 is an IGBT tube, the limiting control circuit further includes: a second capacitor; the second capacitor and the IGBT tube form a second half control capacitor;
第二电容的一端与IGBT管的发射极连接,第二电容的另一端与谐振电容未连接谐振线圈的一端连接,IGBT管的集电极与谐振线圈、谐振电容的连接点连接。One end of the second capacitor is connected to the emitter of the IGBT tube, and the other end of the second capacitor is connected to one end of the resonant capacitor to which the resonant coil is not connected, and the collector of the IGBT tube is connected to the connection point of the resonant coil and the resonant capacitor.
可选的,本发明的另一实施例中,当压控开关S1为MOSFET管时,提供了一种限幅控制装置,除包括由MOSFET管组成的限幅控制电路,还包括:Optionally, in another embodiment of the present invention, when the voltage control switch S1 is a MOSFET, a limiting control device is provided. In addition to the limiting control circuit including the MOSFET, the method further includes:
第一驱动电压供给电路; a first driving voltage supply circuit;
第一驱动电压供给电路,用于为第一半控电容提供电压;a first driving voltage supply circuit for supplying a voltage to the first half control capacitor;
第一驱动电压供给电路包括:The first driving voltage supply circuit includes:
整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
谐振线圈非连接点的一端、整流器、滤波电容、电压采样电路、比较器、驱动放大器和第一半控电容依次连接,隔离开关电源并联在滤波电容的两端。One end of the non-connecting point of the resonant coil, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the first half-control capacitor are sequentially connected, and the isolating switching power supply is connected in parallel at both ends of the filter capacitor.
可选的,本发明的另一实施例中,当压控开关S1为IGBT管时,提供了一种限幅控制装置,除包括由IGBT管组成的限幅控制电路,还包括:Optionally, in another embodiment of the present invention, when the voltage control switch S1 is an IGBT tube, a limiting control device is provided. In addition to the limiting control circuit including the IGBT tube, the method further includes:
第二驱动电压供给电路;a second driving voltage supply circuit;
第二驱动电压供给电路,用于为第二半控电容提供电压;a second driving voltage supply circuit for supplying a voltage to the second half control capacitor;
第二驱动电压供给电路包括:The second driving voltage supply circuit includes:
整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
谐振线圈非连接点的一端、整流器、滤波电容、电压采样电路、比较器、驱动放大器和第二半控电容依次连接,隔离开关电源并联在滤波电容的两端。One end of the non-connecting point of the resonant coil, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the second half-control capacitor are sequentially connected, and the isolating switching power supply is connected in parallel at both ends of the filter capacitor.
需要说明的是,当压控开关S1为IGBT管或MOSFET管时,压控开关也可以称为开关管。It should be noted that when the voltage control switch S1 is an IGBT tube or a MOSFET tube, the voltage control switch may also be referred to as a switch tube.
现参照图5、图6和图7介绍一下当压控开关为MOSFET管或IGBT管时的限幅控制电路的电路图以及限幅控制装置。Referring now to Figures 5, 6, and 7, a circuit diagram and a limiter control device for a limiter control circuit when the voltage control switch is a MOSFET or an IGBT tube will be described.
参照图5,图5为谐振线圈和谐振电容串联、开关管为MOSFET管的情况Referring to FIG. 5, FIG. 5 shows a case where the resonant coil and the resonant capacitor are connected in series, and the switching transistor is a MOSFET.
其中,L1为谐振线圈,C1为谐振电容,L1、C1串联组成一个从动谐振环,第一电容C2与MOSFET管101串联组成第一半控电容,第一半控电容与谐振电容C1并联,同时与谐振线圈L1串联,A、B是输出端,箭头表示磁场。当MOSFET管101的栅极为高电平时,MOSFET管101导通,由于MOSFET管101的内阻很小,接近0,这时,相当于电容C2与谐振电容C1并联,从动谐振环的最佳谐振状态被破坏,振幅下降甚至完全停振;当栅极 为低电平时,MOSFET管101截止,由于MOSFET管101开路,电容C2无效。Wherein, L1 is a resonant coil, C1 is a resonant capacitor, L1 and C1 are connected in series to form a driven resonant ring, and the first capacitor C2 is connected in series with the MOSFET 101 to form a first half-controlled capacitor, and the first half-controlled capacitor is connected in parallel with the resonant capacitor C1. At the same time, it is connected in series with the resonant coil L1, A and B are output terminals, and arrows indicate magnetic fields. When the gate of the MOSFET 101 is at a high level, the MOSFET 101 is turned on, since the internal resistance of the MOSFET 101 is small, close to 0, at this time, the capacitor C2 is connected in parallel with the resonant capacitor C1, and the driven resonant ring is optimal. The resonance state is destroyed, the amplitude is reduced or even completely stopped; when the gate When it is low, the MOSFET 101 is turned off, and since the MOSFET 101 is open, the capacitor C2 is inactive.
参照图6,图6为谐振线圈和谐振电容串联、压控开关为IGBT管的情况。Referring to Fig. 6, Fig. 6 shows a case where the resonant coil and the resonant capacitor are connected in series, and the voltage controlled switch is an IGBT tube.
其中,L1为谐振线圈,C1为谐振电容,L1、C1串联组成从动谐振环,第二电容C3与IGBT管102串联组成第二半控电容,第二半控电容与谐振电容C1并联,同时与谐振线圈L1串联,A、B是输出端,箭头表示磁场。具体工作过程同图1对应的说明,在此不再赘述。Wherein, L1 is a resonant coil, C1 is a resonant capacitor, L1 and C1 are connected in series to form a driven resonant ring, and a second capacitor C3 is connected in series with the IGBT tube 102 to form a second half-controlled capacitor, and the second half-controlled capacitor is connected in parallel with the resonant capacitor C1. In series with the resonant coil L1, A and B are output terminals, and arrows indicate magnetic fields. The specific working process is the same as that of FIG. 1 and will not be described here.
限幅控制装置的电路图参照图7。具体的,谐振电容C1与谐振线圈L1串联组成一个从动谐振环,103为整流器,C4为滤波电容,104为隔离开关电源,电阻R1和R2串联组成电压采样电路,105为比较器,106为驱动放大器,电容C2和MOSFET管101组成第一半控电容,Vd表示输出电压,Vreg为参考电压,R3为限流电阻,R4为放电电阻。The circuit diagram of the limiter control device is shown in Fig. 7. Specifically, the resonant capacitor C1 and the resonant coil L1 are connected in series to form a driven resonant ring, 103 is a rectifier, C4 is a filter capacitor, 104 is an isolated switching power supply, resistors R1 and R2 are connected in series to form a voltage sampling circuit, 105 is a comparator, 106 is The driver amplifier, capacitor C2 and MOSFET 101 form the first half-control capacitor, Vd represents the output voltage, Vreg is the reference voltage, R3 is the current limiting resistor, and R4 is the discharge resistor.
从动谐振环、第一半控电容的电路图已经在上述实施例中进行介绍,请参照上述实施例,在此不再赘述。MOSFET管和IGBT管都是压控器件,需要为它们的栅极提供一个合适的驱动电压才能正常工作。图7中各个模块的工作过程为:The circuit diagram of the driven resonant ring and the first half-controlled capacitor has been described in the above embodiments. Please refer to the above embodiment, and details are not described herein again. Both MOSFET and IGBT transistors are voltage-controlled devices that require a suitable drive voltage for their gates to function properly. The working process of each module in Figure 7 is:
从动谐振环的输出端经整流器103整流和滤波电容C4滤波后,得到一个高压直流电,隔离开关电源104输入一个开关电源,将高压直流电进行电压转换,得到MOSFET管的栅极所需要的直流电压,通常在10V-18V之间,直流高压经R1和R2组成的电压采样电路进行电压采样,然后送到比较器105进行电压对比,如果检测电压超过设定电压,比较器105输出高电平,这个高电平再经驱动放大器106进行电流放大后,经电阻R3送到MOSFET管的栅极,这时MOSFET管导通,第一半控电容有效,从动谐振环的完全谐振被破坏,进而能够提供稳定的电压或电流。The output end of the driven resonant ring is filtered by the rectifier 103 and filtered by the filter capacitor C4 to obtain a high voltage direct current. The isolated switching power supply 104 is input to a switching power supply, and the high voltage direct current is voltage-converted to obtain the DC voltage required for the gate of the MOSFET. Generally, between 10V and 18V, the DC high voltage is subjected to voltage sampling by a voltage sampling circuit composed of R1 and R2, and then sent to the comparator 105 for voltage comparison. If the detected voltage exceeds the set voltage, the comparator 105 outputs a high level. The high level is then amplified by the driver amplifier 106, and then sent to the gate of the MOSFET through the resistor R3. At this time, the MOSFET is turned on, the first half control capacitor is effective, and the complete resonance of the slave resonant ring is destroyed. Can provide a stable voltage or current.
其中,限流电阻R3和放电电阻R4对MOSFET管起到保护作用。Among them, the current limiting resistor R3 and the discharging resistor R4 protect the MOSFET.
需要说明的是,图5、图6和图7中第一半控电容是第一电容与MOSFET管组成,第二半控电容是第二电容与IGBT管组成,MOSFET管和IGBT管在工作中一端必须接“地”,这是一个电路的最低电位参考点,并不是真正的地面,选择“地”是为了便于控制MOSFET管和IGBT管有效地工作。在串联的从动谐振环中,谐振线圈L1与谐振电容C1只有一个 公共中点,选择这个中点作为“地”。It should be noted that, in FIG. 5, FIG. 6 and FIG. 7, the first half-control capacitor is composed of the first capacitor and the MOSFET tube, and the second half-control capacitor is composed of the second capacitor and the IGBT tube, and the MOSFET tube and the IGBT tube are in operation. One end must be connected to "ground", which is the lowest potential reference point of a circuit, not the real ground. The choice of "ground" is to facilitate the effective operation of the MOSFET and IGBT tubes. In the series of driven resonant rings, there is only one resonant coil L1 and resonant capacitor C1. At the public midpoint, select this midpoint as the "ground".
本实施例提供的限幅控制电路,当需要提供稳定的电压或电流时,控制MOSFET管或IGBT管导通,进而控制第一半控电容或第二半控电容导通,谐振线圈和谐振电容的谐振状态被破坏,能够提供稳定的电压或电流,解决了从动谐振环工作不稳定的问题。另外,通过设置驱动电压供给电路,能够给第一半控电容或第二半控电容提供合适的电压,进而能够通过第一半控电容或第二半控电容的通断来控制从动谐振环的谐振状态。The limiting control circuit provided in this embodiment controls the MOSFET tube or the IGBT tube to be turned on when a stable voltage or current is required to be supplied, thereby controlling the conduction of the first half-controlled capacitor or the second half-controlled capacitor, the resonant coil and the resonant capacitor. The resonant state is destroyed, and a stable voltage or current can be provided, which solves the problem that the driven resonant ring is unstable. In addition, by setting the driving voltage supply circuit, the first half-control capacitor or the second half-control capacitor can be supplied with a suitable voltage, and the driven resonant ring can be controlled by the first half-controlled capacitor or the second half-controlled capacitor being turned on and off. The state of resonance.
本发明的另一实施例中,提供了一种限幅控制方法,应用于上述限幅控制电路,限幅控制方法包括:In another embodiment of the present invention, a limiting control method is provided, which is applied to the above-mentioned limiting control circuit, and the limiting control method includes:
当需要提供稳定的电压时,控制压控开关导通。When the stable voltage needs to be supplied, the control voltage control switch is turned on.
具体的,控制压控开关导通,具体包括:采用输入高低电平的方式或脉冲宽度调制的方式控制压控开关导通。Specifically, the control voltage control switch is turned on, and specifically includes: controlling the voltage control switch to be turned on by adopting an input high and low level mode or a pulse width modulation manner.
需要说明的是,当控制端1输入高电平时,两个开关端导通,接通电阻为零或接近于零,谐振电容被短路,原有的谐振状态被改变,振幅下降。当控制端1为低电平时,两个开关端短路,开路电阻无穷大。谐振电容有效,恢复原有的谐振状态,振幅上升。It should be noted that when the control terminal 1 inputs a high level, the two switch terminals are turned on, the on-resistance is zero or close to zero, the resonant capacitor is short-circuited, the original resonance state is changed, and the amplitude is decreased. When the control terminal 1 is low level, the two switch terminals are short-circuited, and the open circuit resistance is infinite. The resonant capacitor is effective, restores the original resonant state, and the amplitude rises.
为了本领域的技术人员更加清楚的了解本方案,现将限幅控制电路的工作原理进行说明。参照图8、图9、图10、图11、图12和图13。In order to understand the solution more clearly by those skilled in the art, the working principle of the limiter control circuit will now be described. Reference is made to Figures 8, 9, 10, 11, 12 and 13.
图8中,L1表示谐振线圈,C1表示谐振电容,谐振线圈L1和谐振电容C1组成从动谐振环。S1表示压控开关,此时压控开关S1为三端压控开关,103表示整流器,用来把交流电转换成直流电,C4为滤波电容,107表示直流DC2DC电源或开关电源SMPS,用来为压控开关S1提供驱动电压,电阻R1和R2组成电压采样电路,108表示电压比较器或脉冲宽度调制PWM发生器,用来为压控开关S1提供高低电平或者PWM信号,Q1和Q2组成驱动放大器106,R3为限流电阻,R4为放电电阻,Vd为输出电压。In Fig. 8, L1 denotes a resonance coil, C1 denotes a resonance capacitor, and resonance coil L1 and resonance capacitor C1 constitute a driven resonance ring. S1 represents the voltage control switch. At this time, the voltage control switch S1 is a three-terminal voltage control switch, 103 represents a rectifier, which is used to convert alternating current into direct current, C4 is a filter capacitor, and 107 represents a direct current DC2DC power supply or a switching power supply SMPS, which is used for voltage The control switch S1 provides a driving voltage, the resistors R1 and R2 constitute a voltage sampling circuit, and 108 represents a voltage comparator or a pulse width modulation PWM generator for providing a high-low level or PWM signal for the voltage-controlled switch S1, and Q1 and Q2 constitute a driving amplifier. 106, R3 is a current limiting resistor, R4 is a discharging resistor, and Vd is an output voltage.
本实施例使用A-B输出端,在交变磁场中,A-B输出端输出交流电,经整流器103整流、滤波电容C4滤波后,得到一个直流电压,当直流电压达到一定数值时,此时若108为电压比较器,电压比较器108输出高电平,经驱动放大器106放大后,输出到压控开关S1的控制端,此时压控开 关S1导通,谐振电容C1被短路,原来的谐振状态被改变,A-B两端的振幅下降,滤波电容C4上的电压也随着下降,当下降到指定数值时,电压比较器108反转,输出低电平,压控开关S1被断开,恢复原有的谐振状态,如此循环,使滤波电容C4上的电压维持在指定数值。In this embodiment, the AB output terminal is used. In the alternating magnetic field, the AB output terminal outputs alternating current, which is rectified by the rectifier 103 and filtered by the filter capacitor C4 to obtain a DC voltage. When the DC voltage reaches a certain value, at this time, if the voltage is 108, the voltage is 108. The comparator, the voltage comparator 108 outputs a high level, is amplified by the driver amplifier 106, and is output to the control terminal of the voltage control switch S1, at which time the voltage control is turned on. When S1 is turned on, the resonant capacitor C1 is short-circuited, the original resonant state is changed, the amplitude of the two ends of AB decreases, and the voltage across the smoothing capacitor C4 also decreases. When falling to a specified value, the voltage comparator 108 is inverted, and the output is inverted. Low level, the voltage control switch S1 is turned off, the original resonance state is restored, and the cycle is performed to maintain the voltage on the filter capacitor C4 at a specified value.
当108为PWM发生器时,其PWM信号的占空比与输入端的电压成正比,随着滤波电容C4上的电压的上升,PWM信号的占空比增大,压控开关S1的导通时间增加,从动谐振环停振的时间延长,滤波电容C4上的电压就下降,随着滤波电容C4电压的下降,PWM发生器108输出的PWM信号的占空比下降,从动谐振环停振的时间缩短,滤波电容C4上的电压就上升,如此循环,使C4上的电压维持在指定数值。When 108 is a PWM generator, the duty ratio of the PWM signal is proportional to the voltage at the input terminal. As the voltage on the filter capacitor C4 rises, the duty ratio of the PWM signal increases, and the on-time of the voltage-controlled switch S1. Increasing, the time of the deceleration of the slave resonant ring is prolonged, and the voltage on the filter capacitor C4 is decreased. As the voltage of the filter capacitor C4 decreases, the duty ratio of the PWM signal output by the PWM generator 108 decreases, and the slave resonant ring stops vibrating. The time is shortened, the voltage on the filter capacitor C4 rises, and the cycle is such that the voltage on C4 is maintained at the specified value.
图9中,电阻R1、R2和R5组成电压采样电路,压控开关S1为四端压控开关。图10中,整流器103采用的是全波整流。图11中整流器103采用的是全波整流,压控开关S1为四端压控开关。图12中输出端为A-C输出端,整流器103采用的是全波整流。图13中,整流器103采用的是全波整流,压控开关S1为四端压控开关。其余元件以及各个元件的工作过程请参照图8中的说明,在此不再赘述。需要说明的是,图8至图13的电路图略有不同,但是工作原理可以相互参考。In Fig. 9, the resistors R1, R2 and R5 constitute a voltage sampling circuit, and the voltage control switch S1 is a four-terminal voltage control switch. In Fig. 10, the rectifier 103 employs full-wave rectification. In Figure 11, the rectifier 103 is full-wave rectified, and the voltage-controlled switch S1 is a four-terminal voltage-controlled switch. In Figure 12, the output is the A-C output and the rectifier 103 is full-wave rectified. In Fig. 13, the rectifier 103 is full-wave rectified, and the voltage control switch S1 is a four-terminal voltage control switch. For the working process of the remaining components and the respective components, please refer to the description in FIG. 8 , and details are not described herein again. It should be noted that the circuit diagrams of FIG. 8 to FIG. 13 are slightly different, but the working principles can be referred to each other.
需要说明的是,“地”是为压控开关S1的有效工作而设置的,即三端压控开关的3端为接地端,四端压控开关的4端为接地端,1端对地电压分别为:IGBT管为10-18VDC,MOSFET管为5-10VDC,TRIAC管为1-5VDC。为了能够达到上述电压,图8至图13中,画了接地端符号的地方均接地。It should be noted that the "ground" is set for the effective operation of the voltage control switch S1, that is, the three ends of the three-terminal voltage control switch are grounded, and the four ends of the four-terminal voltage control switch are grounded, one end is grounded The voltages are: 10-18VDC for the IGBT tube, 5-10VDC for the MOSFET, and 1-5VDC for the TRIAC tube. In order to be able to achieve the above voltage, in Figures 8 to 13, the places where the ground terminal symbols are drawn are grounded.
需要说明的是,上述实施例之间是采用递进的关系进行撰写,上述实施例之间可以相互参考。It should be noted that the foregoing embodiments are written in a progressive relationship, and the foregoing embodiments may be referred to each other.
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的 范围。 The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments are obvious to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the broadest of the principles and novel features disclosed herein. range.

Claims (14)

  1. 一种限幅控制电路,其特征在于,包括:A limiter control circuit, comprising:
    谐振线圈、谐振电容和压控开关;Resonant coil, resonant capacitor and voltage controlled switch;
    所述谐振线圈和所述谐振电容串联;所述压控开关的两个开关端分别与所述谐振电容的两个端点连接。The resonant coil and the resonant capacitor are connected in series; two switch ends of the voltage controlled switch are respectively connected to two end points of the resonant capacitor.
  2. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为MOSFET管,所述MOSFET管的漏极和源极为两个开关端。The limiter control circuit of claim 1 wherein said voltage controlled switch is a MOSFET transistor, said drain and source of said MOSFET being substantially two switch terminals.
  3. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为IGBT管,所述IGBT管的集电极和发射极为两个开关端。The limiter control circuit according to claim 1, wherein the voltage control switch is an IGBT tube, and the collector and the emitter of the IGBT tube are two switch terminals.
  4. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为TRIAC管,所述TRIAC管的主电极T1和主电极T2为两个开关端。The limiter control circuit according to claim 1, wherein the voltage control switch is a TRIAC tube, and the main electrode T1 and the main electrode T2 of the TRIAC tube are two switch terminals.
  5. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为两个IGBT管反向串联,所述两个IGBT管反向串联之后的两个集电极为两个开关端。The limiter control circuit according to claim 1, wherein the voltage control switch is a reverse series connection of two IGBT tubes, and the two collectors after the reverse connection of the two IGBT tubes are two switch ends. .
  6. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为两个MOSFET管反向串联,所述两个MOSFET管反向串联之后的两个漏极为两个开关端。The limiter control circuit according to claim 1, wherein the voltage-controlled switch has two MOSFET tubes connected in reverse series, and the two drains after the reverse connection of the two MOSFET tubes are two switch terminals.
  7. 根据权利要求1所述的限幅控制电路,其特征在于,所述压控开关为两个TRIAC管反向串联,所述两个TRIAC管反向串联之后的两个主电极T2为两个开关端。The limiter control circuit according to claim 1, wherein the voltage control switch has two TRIAC tubes connected in reverse series, and the two main electrodes T2 after the two TRIAC tubes are connected in series are two switches. end.
  8. 根据权利要求2所述的限幅控制电路,其特征在于,还包括:The limiter control circuit of claim 2, further comprising:
    第一电容;所述第一电容与所述MOSFET管组成第一半控电容;a first capacitor; the first capacitor and the MOSFET tube form a first half-control capacitor;
    所述第一电容的一端与所述MOSFET管的源极连接,所述第一电容的另一端与所述谐振电容未连接所述谐振线圈的一端连接,所述MOSFET管的漏极与所述谐振线圈、所述谐振电容的连接点连接。One end of the first capacitor is connected to a source of the MOSFET, and the other end of the first capacitor is connected to one end of the resonant capacitor not connected to the resonant coil, and a drain of the MOSFET is A resonant coil and a connection point of the resonant capacitor are connected.
  9. 根据权利要求3所述的限幅控制电路,其特征在于,还包括:The limiter control circuit of claim 3, further comprising:
    第二电容;所述第二电容与所述IGBT管组成第二半控电容;a second capacitor; the second capacitor and the IGBT tube form a second half-control capacitor;
    所述第二电容的一端与所述IGBT管的发射极连接,所述第二电容的 另一端与所述谐振电容未连接所述谐振线圈的一端连接,所述IGBT管的集电极与所述谐振线圈、所述谐振电容的连接点连接。One end of the second capacitor is connected to an emitter of the IGBT tube, and the second capacitor The other end is connected to one end of the resonant capacitor to which the resonant coil is not connected, and the collector of the IGBT transistor is connected to a connection point of the resonant coil and the resonant capacitor.
  10. 一种限幅控制装置,其特征在于,包括如权利要求8所述的限幅控制电路,还包括:A limiter control device, comprising the limiter control circuit of claim 8, further comprising:
    第一驱动电压供给电路;a first driving voltage supply circuit;
    所述第一驱动电压供给电路,用于为所述第一半控电容提供电压;The first driving voltage supply circuit is configured to supply a voltage to the first half control capacitor;
    所述第一驱动电压供给电路包括:The first driving voltage supply circuit includes:
    整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
    所述谐振线圈非所述连接点的一端、所述整流器、所述滤波电容、所述电压采样电路、所述比较器、所述驱动放大器和所述第一半控电容依次连接,所述隔离开关电源并联在所述滤波电容的两端。The resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier and the first half-control capacitor are sequentially connected, the isolation A switching power supply is connected in parallel across the filter capacitor.
  11. 一种限幅控制装置,其特征在于,包括如权利要求9所述的限幅控制电路,还包括:A limiter control device, comprising the limiter control circuit of claim 9, further comprising:
    第二驱动电压供给电路;a second driving voltage supply circuit;
    所述第二驱动电压供给电路,用于为所述第二半控电容提供电压;The second driving voltage supply circuit is configured to supply a voltage to the second half control capacitor;
    所述第二驱动电压供给电路包括:The second driving voltage supply circuit includes:
    整流器、滤波电容、隔离开关电源、电压采样电路、比较器和驱动放大器;Rectifier, filter capacitor, isolated switching power supply, voltage sampling circuit, comparator and driver amplifier;
    所述谐振线圈非所述连接点的一端、所述整流器、所述滤波电容、所述电压采样电路、所述比较器、所述驱动放大器和所述第二半控电容依次连接,所述隔离开关电源并联在所述滤波电容的两端。The resonant coil is not connected to one end of the connection point, the rectifier, the filter capacitor, the voltage sampling circuit, the comparator, the driving amplifier, and the second half-control capacitor are sequentially connected, and the isolation A switching power supply is connected in parallel across the filter capacitor.
  12. 一种限幅控制方法,其特征在于,应用于如权利要求1~9任意一项所述的限幅控制电路,所述限幅控制方法包括:A limiting control method, which is applied to the limiting control circuit according to any one of claims 1 to 9, wherein the limiting control method comprises:
    当需要提供稳定的电压时,控制所述压控开关导通。The voltage control switch is controlled to be turned on when it is required to provide a stable voltage.
  13. 根据权利要求12所述的限幅控制方法,其特征在于,所述控制所述压控开关导通,具体包括:The limiting control method according to claim 12, wherein the controlling the voltage control switch to be turned on comprises:
    采用输入高低电平的方式控制所述压控开关导通。The voltage control switch is controlled to be turned on by inputting a high level and a low level.
  14. 根据权利要求12所述的限幅控制方法,其特征在于,所述控制所 述压控开关导通,具体包括:The limiter control method according to claim 12, wherein said control station The voltage control switch is turned on, and specifically includes:
    采用脉冲宽度调制的方式控制所述压控开关导通。 The voltage control switch is controlled to be turned on by pulse width modulation.
PCT/CN2016/102563 2016-08-04 2016-10-19 Amplitude limit control circuit, device and method WO2018023882A1 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
CN201620847019.4U CN205945253U (en) 2016-08-04 2016-08-04 Limitation control circuit
CN201610634335.8 2016-08-04
CN201620847019.4 2016-08-04
CN201620841267.8 2016-08-04
CN201620841267.8U CN205921462U (en) 2016-08-04 2016-08-04 Limitation control circuit and device
CN201610634350.2 2016-08-04
CN201610634335.8A CN106059112B (en) 2016-08-04 2016-08-04 A kind of clipping control circuit and method
CN201610634350.2A CN106253494B (en) 2016-08-04 2016-08-04 A kind of clipping control circuit, device and method

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