WO2017222181A1 - Composition for p-type solar cell electrode, electrode prepared therefrom and p-type solar cell prepared using the same - Google Patents

Composition for p-type solar cell electrode, electrode prepared therefrom and p-type solar cell prepared using the same Download PDF

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Publication number
WO2017222181A1
WO2017222181A1 PCT/KR2017/004961 KR2017004961W WO2017222181A1 WO 2017222181 A1 WO2017222181 A1 WO 2017222181A1 KR 2017004961 W KR2017004961 W KR 2017004961W WO 2017222181 A1 WO2017222181 A1 WO 2017222181A1
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Prior art keywords
solar cell
composition
type solar
glass frit
electrode
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PCT/KR2017/004961
Other languages
French (fr)
Inventor
Sang Hee Park
Sang Jin Kim
Hee In Nam
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Samsung Sdi Co., Ltd.
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Publication date
Application filed by Samsung Sdi Co., Ltd. filed Critical Samsung Sdi Co., Ltd.
Priority to EP17815594.1A priority Critical patent/EP3475955A4/en
Priority to US16/099,898 priority patent/US20190157473A1/en
Priority to CN201780039354.9A priority patent/CN109416954B/en
Priority to JP2018565749A priority patent/JP6940166B2/en
Publication of WO2017222181A1 publication Critical patent/WO2017222181A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a composition for p-type solar cell electrodes, an electrode fabricated using the same, and a p-type solar cell using the same. More particularly, the present invention relates to a composition for p-type solar cell electrodes which uses glass frits including a very small amount of Al, thereby improving resistance characteristics and contact efficiency between an electrode and a wafer, an electrode fabricated using the same, and a p-type solar cell fabricated using the same.
  • Solar cells generate electricity using the photovoltaic effect of a p-n junction which converts photons of sunlight into electricity.
  • front and rear electrodes are formed on upper and lower surfaces of a semiconductor wafer or substrate with the p-n junctions, respectively. Then, the photovoltaic effect at the p-n junction is induced by sunlight entering the semiconductor wafer and electrons generated by the photovoltaic effect at the p-n junction provide electric current through the electrodes.
  • the electrodes of the solar cell are formed on the wafer by applying, patterning, and baking an electrode composition.
  • a conductive paste composition including a conductive powder, glass frits, and an organic vehicle is used.
  • a silicon substrate As a wafer or substrate for solar cells, a silicon substrate is mainly used.
  • Solar cells using a silicon substrate may be divided into a p-type solar cell including an n-type emitter layer formed by doping a p-type silicon substrate with dopants such as phosphorus (P) and an n-type solar cell including a p-type emitter layer formed by doping an n-type silicon substrate with dopants such as boron (B).
  • P phosphorus
  • B boron
  • the p-type solar cell has an advantage in that phosphorus diffusion used in formation of the emitter layer can be performed at a lower temperature than boron diffusion and mobility of electrons is faster than that of holes.
  • the p-type solar cell has lower efficiency than the n-type solar cell.
  • composition for p-type solar cell electrodes which can prevent damage to a p-n junction due to an emitter layer under various sheet resistances and can improve conductivity at an interface between a wafer and an electrode so as to enhance contact resistance, thereby improving solar cell efficiency.
  • composition for p-type solar cell electrodes including: (A) silver powder; (B) a glass frit; and (C) an organic vehicle, wherein the glass frit includes about 50 ppm to about 10,000 ppm of aluminum (Al).
  • the glass frit may include tellurium (Te).
  • the glass frit may include at least one of lead (Pb) and bismuth (Bi) together with tellurium (Te).
  • the glass frit may include tellurium and lead, and a molar ratio of tellurium to lead in the glass frit may range from about 1:10 to about 30:1.
  • the glass frit may include tellurium and bismuth, and a molar ratio of tellurium to bismuth in the glass frit may range from about 1:10 to about 40:1.
  • the composition for p-type solar cell electrodes may include: about 60 wt% to about 95 wt% of the silver powder; about 0.5 wt% to about 20 wt% of the glass frit; and about 1 wt% to about 30 wt% of the organic vehicle.
  • the composition for p-type solar cell electrodes may further include tungsten oxide particles and/or at least one additive selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agents, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
  • a p-type solar cell electrode fabricated using the composition for p-type solar cell electrodes according to the present invention.
  • a p-type solar cell including: a wafer comprising a p-type substrate and an n-type emitter formed on one surface of the p-type substrate; a front electrode formed on the n-type emitter; a rear electrode formed on the other surface of the p-type substrate, wherein the front electrode is formed of the composition for p-type solar cell electrodes according to the present invention.
  • the present invention provide a composition for p-type solar cell electrodes, which uses glass frits including a very small amount of Al, thereby improving resistance characteristics and contact efficiency between an electrode and a substrate (wafer) without a shunting phenomenon.
  • the present invention provide p-type solar cell electrodes and a p-type solar cell prepared by using a composition for p-type solar cell electrodes having excellent Fill Factor and conversion efficiency due to minimized resistance.
  • FIG. 1 is a schematic view of a solar cell according to one embodiment of the present invention.
  • FIG. 2 is a diagram showing a ternary eutectic point of Ag-Al-Si.
  • a composition for solar cell electrodes according to the present invention includes: silver powder; a glass frit; and an organic vehicle, wherein the glass frit includes about 50 ppm to about 10,000 ppm of aluminum (Al).
  • the composition for solar cell electrodes according to the present invention includes silver (Ag) powder as a conductive powder.
  • the silver powder may have a nanometer or micrometer-scale particle size.
  • the silver powder may have a particle size of dozens to several hundred nanometers, or a particle diameter of several to dozens of micrometers.
  • the silver powder may be a mixture of two or more types of silver powder having different particle sizes.
  • the silver powder may have various particle shapes such as a spherical, flake or amorphous particle shape without limitation.
  • the silver powder may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m, more specifically about 0.5 ⁇ m to about 5 ⁇ m. Within this range of average particle diameter, it is possible to reduce contact resistance and line resistance.
  • the average particle diameter may be measured using, for example, a Model 1064D (CILAS Co., Ltd.) after dispersing the silver powder in isopropyl alcohol (IPA) at 25°C for 3 minutes via ultrasonication.
  • IPA isopropyl alcohol
  • the silver powder may be present in an amount of about 60 wt% to about 95 wt% based on the total weight of the composition for solar cell electrodes. Within this range, the composition can improve conversion efficiency of a solar cell and can be easily prepared in paste form. Specifically, the silver powder may be present in an amount of about 70 wt% to about 90 wt% based on the total weight of the composition.
  • the glass frit serves to form silver crystal grains in an emitter region by etching an anti-reflection layer and melting the silver powder during a baking process of the composition for solar cell electrodes. Further, the glass frit improves adhesion of the silver powder to a wafer and is softened to decrease the baking temperature during the baking process.
  • the glass frit may include about 50 ppm, 100 ppm, 200 ppm, 300 ppm, 400 ppm, 500 ppm, 600 ppm, 700 ppm, 800 ppm, 900 ppm, 1,000 ppm, 1,500 ppm, 2,000 ppm, 2,500 ppm, 3,000 ppm, 3,500 ppm, 4,000 ppm, 4,500 ppm, 5,000 ppm, 5,500 ppm, 6,000 ppm, 6,500 ppm, 7,000 ppm, 7,500 ppm, 8,000 ppm, 8,500 ppm, 9,000 ppm, 9,500 ppm, or 10,000 ppm of aluminum.
  • the glass frit may include about 50 ppm to about 10,000 ppm, specifically about 100 ppm to about 10,000 ppm of aluminum.
  • a p-type solar cell has a structure in which an emitter layer may be formed by doping one surface of a p-type substrate with dopants such as phosphorous (P), and a front electrode is formed on the emitter layer.
  • dopants such as phosphorous (P)
  • P phosphorous
  • a front electrode is formed on the emitter layer.
  • Al aluminum
  • typical compositions for a front electrode of a p-type solar cell generally do not include Al.
  • FIG. 2 is a diagram showing a ternary eutectic point of silver (Ag), aluminum (Al), and silicon (Si).
  • the eutectic point decreases with decreasing content of aluminum. That is, when aluminum is present in a very small amount in the glass frit as in the present invention, eutectic reaction between aluminum in the glass frit, silver powder, and silicon in the substrate can occur at low temperature, causing increase in sintering rate, and the silver powder is melted in a liquid state at the sintering temperature of the electrode, causing liquid phase sintering, thereby reducing contact resistance with a surface of the silicon substrate (wafer).
  • glass frit which comprises of aluminum (Al) of more than about 10,000 ppm is not suitable for a p-type solar cell.
  • the glass frit may further include tellurium (Te) and may be a tellurium oxide (TeO 2 )-based glass frit including about 10 wt% to about 80 wt% of tellurium oxide.
  • Te tellurium
  • TeO 2 tellurium oxide
  • the glass frit may further include at least one of lead (Pb) and bismuth (Bi), together with aluminum (Al) and tellurium (Te).
  • the glass frit may be a Te-Pb-O-based glass frit including tellurium and lead.
  • a molar ratio of tellurium to lead may be about 1:10, 1:5, 1:2, 1:1, 2:1, 5:1, 10:1, 15:1, 20:1, 25:1, or 30:1.
  • the molar ratio of tellurium to lead may range from one of the numerical values set forth above to another numerical value set forth above.
  • the molar ratio of tellurium to lead may range from about 1:10 to about 30:1, specifically about 1:5 to about 20:1.
  • the glass frit may be a Te-Bi-O-based glass frit including tellurium and bismuth.
  • a molar ratio of tellurium to bismuth may be about 1:10, 1:5, 1:2, 1:1, 2:1, 5:1, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, or 40:1.
  • the molar ratio of tellurium to bismuth may range from one of the numerical values set forth above to another numerical value set forth above.
  • the molar ratio of tellurium to bismuth may range from about 1:10 to about 40:1, specifically about 1:5 to about 30:1.
  • the glass frit may further include a metal and/or a metal oxide in addition to aluminum, tellurium, and lead and/or bismuth.
  • the glass frit may further include at least one selected from the group consisting of lithium (Li), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), and oxides thereof.
  • the glass frit may be prepared by any typical method known in the art.
  • the glass frit may be prepared by mixing the above-described components using a ball mill or a planetary mill, melting the mixture at about 900°C to about 1300°C, and quenching the melted mixture to about 25°C, followed by pulverizing the obtained product using a disk mill, a planetary mill or the like.
  • the glass frit may have an average particle diameter (D50) of about 0.1 ⁇ m to about 10 ⁇ m, without being limited thereto.
  • the glass frit may have various shapes such as a spherical or amorphous shape without limitation.
  • the glass frit may be present in an amount of about 0.5 wt% to about 20 wt%, for example, about 3 wt% to about 15 wt%, based on the total weight of the composition for solar cell electrodes. Within this range, the glass frit can secure stability of a p-n junction under various sheet resistances, minimize resistance, and ultimately improve solar cell efficiency.
  • the organic vehicle imparts suitable viscosity and rheological characteristics for printing to the composition for solar cell electrodes through mechanical mixing with the inorganic component of the composition.
  • the organic vehicle may be any typical organic vehicle used in a composition for solar cell electrodes and may include a binder resin, a solvent, and the like.
  • the binder resin may be selected from acrylate resins or cellulose resins. Ethyl cellulose is generally used as the binder resin. In addition, the binder resin may be selected from among ethyl hydroxyethyl cellulose, nitrocellulose, blends of ethyl cellulose and phenol resins, alkyd, phenol, acrylate ester, xylene, polybutane, polyester, urea, melamine, vinyl acetate resins, wood rosin, polymethacrylates of alcohols, and the like.
  • the solvent may be selected from the group consisting of, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methylethylketone, benzylalcohol, ⁇ -butyrolactone, and ethyl lactate. These may be used alone or as a mixture thereof.
  • the organic vehicle may be present in an amount of about 1 wt% to about 30 wt% based on the total weight of the composition for solar cell electrodes. Within this range, the organic vehicle can provide sufficient adhesive strength and excellent printability to the composition.
  • composition for solar cell electrodes according to the present invention may further include metal oxide particles, as needed, in addition to the aforementioned components.
  • a solar cell may include multiple cells. Here, adjacent cells are connected to one another through a ribbon.
  • the ribbon may be directly bonded to a busbar-type electrode. If adhesive strength of the solar cell electrode to the ribbon is not sufficiently secured, a cell can be detached or reliability of the solar cell can be deteriorated.
  • the metal oxide particles serve to improve the adhesive strength between the electrode and the ribbon, and may be, for example, tungsten oxide (WO 3 ) particles.
  • the tungsten oxide (WO 3 ) particles may take the form of powder or granules.
  • the tungsten oxide (WO 3 ) particles may have an average particle size (D50) of for example, about 0.1 ⁇ m to about 10 ⁇ m, specifically about 0.1 ⁇ m to about 5 ⁇ m before sintering. Within this range, a solar cell electrode fabricated using the composition can have excellent adhesive strength and photoelectric conversion efficiency.
  • the tungsten oxide particles may be present in an amount of about 0.1 wt% to about 1.0 wt% based on the total weight of the electrode paste. Within this range, it is possible to form a precise pattern when the electrode is etched. In addition, the tungsten oxide particles can improve the open-circuit voltage of the electrode while securing excellent adhesive strength of the electrode.
  • the composition for solar cell electrodes according to the present invention may further include typical additives to enhance fluidity, process properties and stability, as needed.
  • the additives may include dispersants, thixotropic agents, plasticizers, viscosity stabilizers, anti-foaming agents, pigments, UV stabilizers, antioxidants, coupling agents, and the like. These additives may be used alone or as mixtures thereof.
  • the additives may be present in an amount of about 0.1 wt% to about 5 wt% based on the total weight of the composition for solar cell electrodes, without being limited thereto.
  • the composition according to the present invention uses a glass frit including a very small amount of Al such that eutectic reaction between aluminum, silver powder, and silicon can occur during baking of an electrode to induce liquid phase sintering, thereby improving resistance characteristics and contact efficiency between the electrode and a wafer.
  • the composition includes a very small amount of aluminum and thus does not cause shunting even when applied to a p-type solar cell.
  • FIG. 1 shows a solar cell in accordance with one embodiment of the present invention.
  • a solar cell according to the present invention may include: a wafer 100 including a p-type substrate 101 and an n-type emitter 102 formed on one surface of the p-type substrate; a front electrode 230 formed on the n-type emitter; and a rear electrode 210 formed on the other surface of the p-type substrate 101.
  • the n-type emitter 102 may be formed by doping one surface of the p-type substrate 101 with dopants such as antimony (Sb), arsenic (As), or phosphorus (P), which is a group V element.
  • dopants such as antimony (Sb), arsenic (As), or phosphorus (P), which is a group V element.
  • the front electrode 230 may be formed of the composition for solar cell electrodes according to the present invention, and the rear electrode 210 may be formed of an aluminum paste.
  • the front electrode (P+ electrode) 230 may be formed by printing the composition for solar cell electrodes on a front surface of the wafer 100 including the p-type substrate 101 and the n-type emitter 102, followed by baking, and the rear electrode 210 may be formed by applying the aluminum paste to the back surface of the wafer, followed by baking.
  • a preliminary process of forming the rear electrode is performed by printing the composition on the back surface of the wafer and drying the printed composition at about 200°C to about 400°C for about 10 to about 60 seconds.
  • a preliminary process of forming the front electrode may be performed by printing the composition on the front surface of the wafer and drying the printed composition. Then, the front electrode 230 and the rear electrode 210 may be formed by baking the wafer at about 400°C to about 950°C, specifically at about 850°C to about 950°C, for about 30 to about 50 seconds.
  • ethylcellulose As an organic binder, 1.0 wt% of ethylcellulose (STD4, Dow Chemical Company) was sufficiently dissolved in 6.2 wt% of Texanol at 60°C, and 89.0 wt% of spherical silver powder (AG-4-8, Dowa Hightech Co., Ltd.) having an average particle diameter of 1.0 ⁇ m, 3.0 wt% of a glass frit prepared according to the composition as listed in Table 1, 0.2 wt% of a dispersant BYK102 (BYK-Chemie), 0.3 wt% of a thixotropic agent Thixatrol ST (Elementis Co., Ltd.), and 0.3 wt% of tungsten oxide particles were added to the binder solution, followed by mixing and kneading in a 3-roll kneader, thereby preparing an electrode paste.
  • composition and content of each glass frit were measured in the following manner:
  • Pretreatment of samples 0.5 g of a glass frit sample to be analyzed was placed in a beaker and correctly weighed to within 0.0001 g. 5 ml of sulfuric acid (H2SO4) was added to the beaker, followed by heating at 220°C for 3 hours using a hot plate, thereby completely carbonizing the sample. Hydrogen peroxide (H2O2) was added to the beaker until the beaker including the carbonized sample became transparent, thereby completing pretreatment.
  • H2SO4 sulfuric acid
  • Nitric acid (HNO 3 ) was added to the beaker including the pre-treated sample, followed by heating for 5 minutes and air cooling.
  • the prepared standard solution was introduced into an ICP-OES tester (PerkinElmer, Inc.) and a calibration curve was plotted by an external standard method, followed by measuring and converting the concentration of each element in the sample using the ICP-OES tester, thereby calculating the content of Al in the glass frit.
  • Nitric acid (HNO 3 ) was added to the beaker including the pre-treated sample, followed by heating for 5 minutes and air cooling.
  • the prepared standard solution was introduced into an ICP-OES tester (PerkinElmer, Inc.) and a calibration curve was plotted by an external standard method, followed by measuring and converting the concentration of each element in the sample using the ICP-OES tester, thereby calculating the content of Al in the glass frit.
  • ICP-OES tester PerkinElmer, Inc.
  • Each of the pastes for solar cell electrodes prepared in Examples and Comparative Examples was deposited over a front surface of a p-type substrate doped with POCL 3 (c-Si p-type wafer, LIGHTWAY GREEN NEW ENERGY CO., LTD.) by screen printing in a predetermined pattern, followed by drying in an IR drying furnace. Then, an aluminum paste was printed on a back surface of the wafer and dried in the same manner.
  • a cell formed according to this procedure was subjected to baking at a temperature of 400°C to 950°C for 30 to 180 seconds in a belt-type baking furnace, thereby fabricating a solar cell.
  • the solar cell was evaluated as to contact resistance (Rs) (ohm), shunt resistance (Rsh) (ohm), fill factor (FF, %), and conversion efficiency (Eff., %) using a solar cell efficiency tester (CT-801, Pasan Co., Ltd.).
  • the solar cells fabricated using the electrode pastes of Examples 1 to 6, which were prepared using the glass frits including Al within the range specified in the present invention exhibited minimized shunting, that is, high shunt resistance (Rsh), and good contact resistance (Rs), and thus exhibited excellent electrical properties (fill factor and conversion efficiency).
  • the solar cell fabricated using the electrode paste of Comparative Example 1 which was prepared using the glass frit including Al in an amount exceeding the range specified in the present invention, had good contact resistance but underwent shunting and exhibited relatively poor electrical properties, and the solar cell fabricated using the electrode paste of Comparative Example 2 using the glass frit not including Al exhibited high contact resistance and thus poor electrical properties.

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Abstract

A composition for p-type solar cell electrodes, an electrode fabricated using the same, and a solar cell fabricated using the same. The composition for p-type solar cell electrodes includes: (A) silver powder; (B) a glass frit; and (C) an organic vehicle, wherein the glass frit includes about 50 ppm to about 10,000 ppm of aluminum (Al).

Description

COMPOSITION FOR P-TYPE SOLAR CELL ELECTRODE, ELECTRODE PREPARED THEREFROM AND P-TYPE SOLAR CELL PREPARED USING THE SAME
The present invention relates to a composition for p-type solar cell electrodes, an electrode fabricated using the same, and a p-type solar cell using the same. More particularly, the present invention relates to a composition for p-type solar cell electrodes which uses glass frits including a very small amount of Al, thereby improving resistance characteristics and contact efficiency between an electrode and a wafer, an electrode fabricated using the same, and a p-type solar cell fabricated using the same.
Solar cells generate electricity using the photovoltaic effect of a p-n junction which converts photons of sunlight into electricity. In the solar cell, front and rear electrodes are formed on upper and lower surfaces of a semiconductor wafer or substrate with the p-n junctions, respectively. Then, the photovoltaic effect at the p-n junction is induced by sunlight entering the semiconductor wafer and electrons generated by the photovoltaic effect at the p-n junction provide electric current through the electrodes. The electrodes of the solar cell are formed on the wafer by applying, patterning, and baking an electrode composition. As the composition for solar cell electrodes, a conductive paste composition including a conductive powder, glass frits, and an organic vehicle is used.
As a wafer or substrate for solar cells, a silicon substrate is mainly used. Solar cells using a silicon substrate may be divided into a p-type solar cell including an n-type emitter layer formed by doping a p-type silicon substrate with dopants such as phosphorus (P) and an n-type solar cell including a p-type emitter layer formed by doping an n-type silicon substrate with dopants such as boron (B). The p-type solar cell has an advantage in that phosphorus diffusion used in formation of the emitter layer can be performed at a lower temperature than boron diffusion and mobility of electrons is faster than that of holes. However, the p-type solar cell has lower efficiency than the n-type solar cell.
Recently, in order to increase solar cell efficiency, the area of a solar cell is gradually increased and the thickness of an emitter layer is continuously reduced. Sheet resistance of a wafer increases with increasing solar cell area, thereby causing increase in contact resistance of the solar cell and deterioration in solar cell efficiency. In addition, continuous reduction in emitter thickness causes frequent shunting, which can lead to deterioration in solar cell performance.
Therefore, there is a need for a composition for p-type solar cell electrodes, which can prevent damage to a p-n junction due to an emitter layer under various sheet resistances and can improve conductivity at an interface between a wafer and an electrode so as to enhance contact resistance, thereby improving solar cell efficiency.
It is an aspect of the present invention to provide a composition for p-type solar cell electrodes which can improve resistance characteristics and contact efficiency between an electrode and a substrate (wafer).
It is another aspect of the present invention to provide p-type solar cell electrodes and a p-type solar cell having excellent Fill Factor and conversion efficiency.
It is a further aspect of the present invention to provide p-type solar cell electrodes and a p-type solar cell prepared by using a composition for p-type solar cell electrodes.
In accordance with one aspect of the present invention, there is provided a composition for p-type solar cell electrodes including: (A) silver powder; (B) a glass frit; and (C) an organic vehicle, wherein the glass frit includes about 50 ppm to about 10,000 ppm of aluminum (Al).
The glass frit may include tellurium (Te). In addition, the glass frit may include at least one of lead (Pb) and bismuth (Bi) together with tellurium (Te).
In one embodiment, the glass frit may include tellurium and lead, and a molar ratio of tellurium to lead in the glass frit may range from about 1:10 to about 30:1.
In another embodiment, the glass frit may include tellurium and bismuth, and a molar ratio of tellurium to bismuth in the glass frit may range from about 1:10 to about 40:1.
The composition for p-type solar cell electrodes may include: about 60 wt% to about 95 wt% of the silver powder; about 0.5 wt% to about 20 wt% of the glass frit; and about 1 wt% to about 30 wt% of the organic vehicle.
The composition for p-type solar cell electrodes may further include tungsten oxide particles and/or at least one additive selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agents, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
In accordance with another aspect of the present invention, there is provided a p-type solar cell electrode fabricated using the composition for p-type solar cell electrodes according to the present invention.
In accordance with a further aspect of the present invention, there is provided a p-type solar cell including: a wafer comprising a p-type substrate and an n-type emitter formed on one surface of the p-type substrate; a front electrode formed on the n-type emitter; a rear electrode formed on the other surface of the p-type substrate, wherein the front electrode is formed of the composition for p-type solar cell electrodes according to the present invention.
The present invention provide a composition for p-type solar cell electrodes, which uses glass frits including a very small amount of Al, thereby improving resistance characteristics and contact efficiency between an electrode and a substrate (wafer) without a shunting phenomenon.
The present invention provide p-type solar cell electrodes and a p-type solar cell prepared by using a composition for p-type solar cell electrodes having excellent Fill Factor and conversion efficiency due to minimized resistance.
FIG. 1 is a schematic view of a solar cell according to one embodiment of the present invention.
FIG. 2 is a diagram showing a ternary eutectic point of Ag-Al-Si.
Hereinafter, embodiments of the present invention will be described in detail.
Composition for solar cell electrodes
A composition for solar cell electrodes according to the present invention includes: silver powder; a glass frit; and an organic vehicle, wherein the glass frit includes about 50 ppm to about 10,000 ppm of aluminum (Al).
(A) Silver powder
The composition for solar cell electrodes according to the present invention includes silver (Ag) powder as a conductive powder. The silver powder may have a nanometer or micrometer-scale particle size. For example, the silver powder may have a particle size of dozens to several hundred nanometers, or a particle diameter of several to dozens of micrometers. Alternatively, the silver powder may be a mixture of two or more types of silver powder having different particle sizes.
The silver powder may have various particle shapes such as a spherical, flake or amorphous particle shape without limitation.
Specifically, the silver powder may have an average particle diameter (D50) of about 0.1 μm to about 10 μm, more specifically about 0.5 μm to about 5 μm. Within this range of average particle diameter, it is possible to reduce contact resistance and line resistance. The average particle diameter may be measured using, for example, a Model 1064D (CILAS Co., Ltd.) after dispersing the silver powder in isopropyl alcohol (IPA) at 25℃ for 3 minutes via ultrasonication.
The silver powder may be present in an amount of about 60 wt% to about 95 wt% based on the total weight of the composition for solar cell electrodes. Within this range, the composition can improve conversion efficiency of a solar cell and can be easily prepared in paste form. Specifically, the silver powder may be present in an amount of about 70 wt% to about 90 wt% based on the total weight of the composition.
(B) Glass frit
The glass frit serves to form silver crystal grains in an emitter region by etching an anti-reflection layer and melting the silver powder during a baking process of the composition for solar cell electrodes. Further, the glass frit improves adhesion of the silver powder to a wafer and is softened to decrease the baking temperature during the baking process.
In the present invention, the glass frit may include about 50 ppm, 100 ppm, 200 ppm, 300 ppm, 400 ppm, 500 ppm, 600 ppm, 700 ppm, 800 ppm, 900 ppm, 1,000 ppm, 1,500 ppm, 2,000 ppm, 2,500 ppm, 3,000 ppm, 3,500 ppm, 4,000 ppm, 4,500 ppm, 5,000 ppm, 5,500 ppm, 6,000 ppm, 6,500 ppm, 7,000 ppm, 7,500 ppm, 8,000 ppm, 8,500 ppm, 9,000 ppm, 9,500 ppm, or 10,000 ppm of aluminum. Alternatively, aluminum may be present in an amount ranging from one of the numerical values set forth above to another numerical value set forth above. For example, the glass frit may include about 50 ppm to about 10,000 ppm, specifically about 100 ppm to about 10,000 ppm of aluminum.
As described above, a p-type solar cell has a structure in which an emitter layer may be formed by doping one surface of a p-type substrate with dopants such as phosphorous (P), and a front electrode is formed on the emitter layer. When aluminum (Al) is bonded to the n-type emitter layer, shunting can occur. Therefore, typical compositions for a front electrode of a p-type solar cell generally do not include Al.
However, in accordance with research conducted by the present inventors, it has been found that, when a very small amount of aluminum is contained in the glass frit, resistance characteristics and contact efficiency between an electrode and a substrate (wafer) can be improved without a shunting phenomenon due to reaction between aluminum (Al) and an n-type emitter layer. It is considered that improvement in contact efficiency with the substrate and resistance characteristics are caused by the fact that eutectic reaction between the aluminum contained in the glass frit, the silver powder, and silicon contained in the substrate occurs at low temperature during baking.
FIG. 2 is a diagram showing a ternary eutectic point of silver (Ag), aluminum (Al), and silicon (Si). Referring to FIG. 2, it can be seen that, in the ternary system of silver, aluminum, and silicon, the eutectic point decreases with decreasing content of aluminum. That is, when aluminum is present in a very small amount in the glass frit as in the present invention, eutectic reaction between aluminum in the glass frit, silver powder, and silicon in the substrate can occur at low temperature, causing increase in sintering rate, and the silver powder is melted in a liquid state at the sintering temperature of the electrode, causing liquid phase sintering, thereby reducing contact resistance with a surface of the silicon substrate (wafer). If more than about 10,000 ppm of aluminum is contained in the glass frit, aluminum contained in the glass frit can react with the n-type emitter layer, thereby causing shunting. Thus, such a glass frit which comprises of aluminum (Al) of more than about 10,000 ppm is not suitable for a p-type solar cell.
In addition to aluminum (Al), the glass frit may further include tellurium (Te) and may be a tellurium oxide (TeO2)-based glass frit including about 10 wt% to about 80 wt% of tellurium oxide.
The glass frit may further include at least one of lead (Pb) and bismuth (Bi), together with aluminum (Al) and tellurium (Te).
In one embodiment, the glass frit may be a Te-Pb-O-based glass frit including tellurium and lead. Here, in the glass frit, a molar ratio of tellurium to lead may be about 1:10, 1:5, 1:2, 1:1, 2:1, 5:1, 10:1, 15:1, 20:1, 25:1, or 30:1. Alternatively, the molar ratio of tellurium to lead may range from one of the numerical values set forth above to another numerical value set forth above. For example, the molar ratio of tellurium to lead may range from about 1:10 to about 30:1, specifically about 1:5 to about 20:1.
In another embodiment, the glass frit may be a Te-Bi-O-based glass frit including tellurium and bismuth. In the glass frit, a molar ratio of tellurium to bismuth may be about 1:10, 1:5, 1:2, 1:1, 2:1, 5:1, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, or 40:1. Alternatively, the molar ratio of tellurium to bismuth may range from one of the numerical values set forth above to another numerical value set forth above. For example, the molar ratio of tellurium to bismuth may range from about 1:10 to about 40:1, specifically about 1:5 to about 30:1.
The glass frit may further include a metal and/or a metal oxide in addition to aluminum, tellurium, and lead and/or bismuth. For example, the glass frit may further include at least one selected from the group consisting of lithium (Li), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), silicon (Si), zinc (Zn), tungsten (W), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), and oxides thereof.
The glass frit may be prepared by any typical method known in the art. For example, the glass frit may be prepared by mixing the above-described components using a ball mill or a planetary mill, melting the mixture at about 900℃ to about 1300℃, and quenching the melted mixture to about 25℃, followed by pulverizing the obtained product using a disk mill, a planetary mill or the like.
The glass frit may have an average particle diameter (D50) of about 0.1 μm to about 10 μm, without being limited thereto. In addition, the glass frit may have various shapes such as a spherical or amorphous shape without limitation.
The glass frit may be present in an amount of about 0.5 wt% to about 20 wt%, for example, about 3 wt% to about 15 wt%, based on the total weight of the composition for solar cell electrodes. Within this range, the glass frit can secure stability of a p-n junction under various sheet resistances, minimize resistance, and ultimately improve solar cell efficiency.
(C) Organic vehicle
The organic vehicle imparts suitable viscosity and rheological characteristics for printing to the composition for solar cell electrodes through mechanical mixing with the inorganic component of the composition.
The organic vehicle may be any typical organic vehicle used in a composition for solar cell electrodes and may include a binder resin, a solvent, and the like.
The binder resin may be selected from acrylate resins or cellulose resins. Ethyl cellulose is generally used as the binder resin. In addition, the binder resin may be selected from among ethyl hydroxyethyl cellulose, nitrocellulose, blends of ethyl cellulose and phenol resins, alkyd, phenol, acrylate ester, xylene, polybutane, polyester, urea, melamine, vinyl acetate resins, wood rosin, polymethacrylates of alcohols, and the like.
The solvent may be selected from the group consisting of, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol, methylethylketone, benzylalcohol, γ-butyrolactone, and ethyl lactate. These may be used alone or as a mixture thereof.
The organic vehicle may be present in an amount of about 1 wt% to about 30 wt% based on the total weight of the composition for solar cell electrodes. Within this range, the organic vehicle can provide sufficient adhesive strength and excellent printability to the composition.
(D) Metal oxide
The composition for solar cell electrodes according to the present invention may further include metal oxide particles, as needed, in addition to the aforementioned components.
A solar cell may include multiple cells. Here, adjacent cells are connected to one another through a ribbon. The ribbon may be directly bonded to a busbar-type electrode. If adhesive strength of the solar cell electrode to the ribbon is not sufficiently secured, a cell can be detached or reliability of the solar cell can be deteriorated. The metal oxide particles serve to improve the adhesive strength between the electrode and the ribbon, and may be, for example, tungsten oxide (WO3) particles.
Here, the tungsten oxide (WO3) particles may take the form of powder or granules. The tungsten oxide (WO3) particles may have an average particle size (D50) of for example, about 0.1 μm to about 10 μm, specifically about 0.1 μm to about 5 μm before sintering. Within this range, a solar cell electrode fabricated using the composition can have excellent adhesive strength and photoelectric conversion efficiency.
The tungsten oxide particles may be present in an amount of about 0.1 wt% to about 1.0 wt% based on the total weight of the electrode paste. Within this range, it is possible to form a precise pattern when the electrode is etched. In addition, the tungsten oxide particles can improve the open-circuit voltage of the electrode while securing excellent adhesive strength of the electrode.
(E) Additives
The composition for solar cell electrodes according to the present invention may further include typical additives to enhance fluidity, process properties and stability, as needed. The additives may include dispersants, thixotropic agents, plasticizers, viscosity stabilizers, anti-foaming agents, pigments, UV stabilizers, antioxidants, coupling agents, and the like. These additives may be used alone or as mixtures thereof. The additives may be present in an amount of about 0.1 wt% to about 5 wt% based on the total weight of the composition for solar cell electrodes, without being limited thereto.
The composition according to the present invention uses a glass frit including a very small amount of Al such that eutectic reaction between aluminum, silver powder, and silicon can occur during baking of an electrode to induce liquid phase sintering, thereby improving resistance characteristics and contact efficiency between the electrode and a wafer. In addition, the composition includes a very small amount of aluminum and thus does not cause shunting even when applied to a p-type solar cell.
Solar cell electrode and solar cell including the same
Other aspects of the invention relate to an electrode formed of the composition for solar cell electrodes and a solar cell including the same. FIG. 1 shows a solar cell in accordance with one embodiment of the present invention.
Referring to FIG. 1, a solar cell according to the present invention may include: a wafer 100 including a p-type substrate 101 and an n-type emitter 102 formed on one surface of the p-type substrate; a front electrode 230 formed on the n-type emitter; and a rear electrode 210 formed on the other surface of the p-type substrate 101.
Here, the n-type emitter 102 may be formed by doping one surface of the p-type substrate 101 with dopants such as antimony (Sb), arsenic (As), or phosphorus (P), which is a group V element.
The front electrode 230 may be formed of the composition for solar cell electrodes according to the present invention, and the rear electrode 210 may be formed of an aluminum paste. Specifically, the front electrode (P+ electrode) 230 may be formed by printing the composition for solar cell electrodes on a front surface of the wafer 100 including the p-type substrate 101 and the n-type emitter 102, followed by baking, and the rear electrode 210 may be formed by applying the aluminum paste to the back surface of the wafer, followed by baking. For example, a preliminary process of forming the rear electrode is performed by printing the composition on the back surface of the wafer and drying the printed composition at about 200℃ to about 400℃ for about 10 to about 60 seconds. Further, a preliminary process of forming the front electrode may be performed by printing the composition on the front surface of the wafer and drying the printed composition. Then, the front electrode 230 and the rear electrode 210 may be formed by baking the wafer at about 400℃ to about 950℃, specifically at about 850℃ to about 950℃, for about 30 to about 50 seconds.
Next, the present invention will be described in more detail with reference to examples. However, it should be noted that these examples are provided for illustration only and should not be construed in any way as limiting the invention.
Examples and Comparative Examples
As an organic binder, 1.0 wt% of ethylcellulose (STD4, Dow Chemical Company) was sufficiently dissolved in 6.2 wt% of Texanol at 60℃, and 89.0 wt% of spherical silver powder (AG-4-8, Dowa Hightech Co., Ltd.) having an average particle diameter of 1.0 μm, 3.0 wt% of a glass frit prepared according to the composition as listed in Table 1, 0.2 wt% of a dispersant BYK102 (BYK-Chemie), 0.3 wt% of a thixotropic agent Thixatrol ST (Elementis Co., Ltd.), and 0.3 wt% of tungsten oxide particles were added to the binder solution, followed by mixing and kneading in a 3-roll kneader, thereby preparing an electrode paste.
Table 1
Figure PCTKR2017004961-appb-I000001
Measurement of content ( wt% ) of Al in glass frit using ICP- OES
The composition and content of each glass frit were measured in the following manner:
Pretreatment of samples: 0.5 g of a glass frit sample to be analyzed was placed in a beaker and correctly weighed to within 0.0001 g. 5 ml of sulfuric acid (H2SO4) was added to the beaker, followed by heating at 220℃ for 3 hours using a hot plate, thereby completely carbonizing the sample. Hydrogen peroxide (H2O2) was added to the beaker until the beaker including the carbonized sample became transparent, thereby completing pretreatment.
Preparation of standard solution: A standard solution of each element to be analyzed (including Al) was prepared.
Measurement of content of metal component: Nitric acid (HNO3) was added to the beaker including the pre-treated sample, followed by heating for 5 minutes and air cooling. The prepared standard solution was introduced into an ICP-OES tester (PerkinElmer, Inc.) and a calibration curve was plotted by an external standard method, followed by measuring and converting the concentration of each element in the sample using the ICP-OES tester, thereby calculating the content of Al in the glass frit.: Nitric acid (HNO3) was added to the beaker including the pre-treated sample, followed by heating for 5 minutes and air cooling. The prepared standard solution was introduced into an ICP-OES tester (PerkinElmer, Inc.) and a calibration curve was plotted by an external standard method, followed by measuring and converting the concentration of each element in the sample using the ICP-OES tester, thereby calculating the content of Al in the glass frit.
Amount of each element (%) = Concentration of each element (ppm) × Dilution Factor (DF)/10000
Content of Al (wt%) = (Amount of elemental Al/Amount of all elements) × 100
Property evaluation
(1) Rs (series resistance), Rsh (shunt resistance), fill factor (FF, %), and conversion efficiency ( Eff ., % ):
Each of the pastes for solar cell electrodes prepared in Examples and Comparative Examples was deposited over a front surface of a p-type substrate doped with POCL3 (c-Si p-type wafer, LIGHTWAY GREEN NEW ENERGY CO., LTD.) by screen printing in a predetermined pattern, followed by drying in an IR drying furnace. Then, an aluminum paste was printed on a back surface of the wafer and dried in the same manner. A cell formed according to this procedure was subjected to baking at a temperature of 400℃ to 950℃ for 30 to 180 seconds in a belt-type baking furnace, thereby fabricating a solar cell. The solar cell was evaluated as to contact resistance (Rs) (ohm), shunt resistance (Rsh) (ohm), fill factor (FF, %), and conversion efficiency (Eff., %) using a solar cell efficiency tester (CT-801, Pasan Co., Ltd.).
Table 2
Figure PCTKR2017004961-appb-I000002
As shown in Table 2, it can be seen that the solar cells fabricated using the electrode pastes of Examples 1 to 6, which were prepared using the glass frits including Al within the range specified in the present invention, exhibited minimized shunting, that is, high shunt resistance (Rsh), and good contact resistance (Rs), and thus exhibited excellent electrical properties (fill factor and conversion efficiency). Conversely, the solar cell fabricated using the electrode paste of Comparative Example 1, which was prepared using the glass frit including Al in an amount exceeding the range specified in the present invention, had good contact resistance but underwent shunting and exhibited relatively poor electrical properties, and the solar cell fabricated using the electrode paste of Comparative Example 2 using the glass frit not including Al exhibited high contact resistance and thus poor electrical properties.
Example embodiments have been disclosed herein, and although specific terms have been employed, such terms are used and are to be interpreted in a generic and descriptive sense only and not for purposes of limitation. In some instances, as would be apparent to one of ordinary skill in the art as of the filing of the present application, features, characteristics, and/or elements described in connection with a particular embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims (10)

  1. A composition for p-type solar cell electrodes, comprising: (A) silver powder; (B) a glass frit; and (C) an organic vehicle,
    wherein the glass frit comprises about 50 ppm to about 10,000 ppm of aluminum (Al).
  2. The composition for p-type solar cell electrodes according to claim 1, wherein the glass frit comprises tellurium (Te).
  3. The composition for p-type solar cell electrodes according to claim 2, wherein the glass frit comprises at least one of lead (Pb) and bismuth (Bi).
  4. The composition for p-type solar cell electrodes according to claim 1, wherein the glass frit comprises tellurium and lead, and a molar ratio of tellurium to lead in the glass frit ranges from about 1:10 to about 30:1.
  5. The composition for p-type solar cell electrodes according to claim 1, wherein the glass frit comprises tellurium and bismuth, and a molar ratio of tellurium to bismuth in the glass frit ranges from about 1:10 to about 40:1.
  6. The composition for p-type solar cell electrodes according to claim 1, comprising: about 60 wt% to about 95 wt% of the silver powder; about 0.5 wt% to about 20 wt% of the glass frit; and about 1 wt% to about 30 wt% of the organic vehicle.
  7. The composition for p-type solar cell electrodes according to claim 1, further comprising: tungsten oxide particles.
  8. The composition for p-type solar cell electrodes according to claim 1, further comprising: at least one additive selected from the group consisting of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agents, a pigment, a UV stabilizer, an antioxidant, and a coupling agent.
  9. A p-type solar cell electrode fabricated using the composition for p-type solar cell electrodes according to any one of claims 1 to 8.
  10. A p-type solar cell comprising:
    a wafer comprising a p-type substrate and an n-type emitter formed on one surface of the p-type substrate;
    a front electrode formed on the n-type emitter;
    a rear electrode formed on the other surface of the p-type substrate,
    wherein the front electrode is formed of the composition for p-type solar cell electrodes according to any one of claims 1 to 8.
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