WO2017198000A1 - 超材料及其频率调节方法和装置 - Google Patents
超材料及其频率调节方法和装置 Download PDFInfo
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- WO2017198000A1 WO2017198000A1 PCT/CN2017/079578 CN2017079578W WO2017198000A1 WO 2017198000 A1 WO2017198000 A1 WO 2017198000A1 CN 2017079578 W CN2017079578 W CN 2017079578W WO 2017198000 A1 WO2017198000 A1 WO 2017198000A1
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- metamaterial
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/00006—Changing the frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
Definitions
- the present invention relates to the field of control, and in particular to a metamaterial and a frequency adjustment method and apparatus therefor.
- metamaterials In the existing society, metamaterials have artificial composite structures of extraordinary physical properties that are not possessed by traditional natural materials. However, for metamaterials, their singular electromagnetic properties have a frequency range beyond which this strange Electromagnetic properties will weaken or even disappear.
- controllable metamaterials mainly include three categories: (1) mechanically controllable metamaterials; (2) loading microwave switches; 3) Loading a controllable material (for example, ferrite, liquid crystal material, graphene, etc.).
- the mechanically controllable metamaterial has a relatively large volume and is difficult to operate due to the precise control of the amount of movement; the state of the controllable metamaterial loaded with the microwave switch is related to the number of switches, and sufficient A large number of states requires the addition of a sufficient number of switches, resulting in an increase in the complexity of the structure; while the metamaterial loaded with the controllable material has a small frequency range of regulation, and requires an external bias field to cause a complicated structure. In response to the above problems, no effective solution has been proposed yet.
- Embodiments of the present invention provide a metamaterial and a frequency adjustment method and apparatus thereof to at least solve the technical problem that the operating frequency of the metamaterial cannot be quickly and accurately adjusted in the prior art.
- a metamaterial comprising: a substrate material; an array of electrically controllable microstructure units, the array of electrically controllable microstructure units being disposed on the substrate material,
- the array of controlled microstructure units includes a plurality of electrically controllable microstructure units, wherein each electrically controllable microstructure unit comprises: an outer metal structure and an inner metal structure, the inner metal structure and the outer metal structure forming a circular channel a varactor diode disposed in the channel of each of the electrically controllable microstructure units for adjusting each of said electricity according to a voltage applied across said varactor The operating frequency of the controllable microstructure unit.
- the outer metal structure is a square structure
- the inner metal structure is a rectangular metal patch
- the inner metal structure is nested within the outer metal structure.
- the adjustment range of the operating frequency includes: 0.3 GHz to 300 GHz.
- the material of the outer metal structure and the inner metal structure is at least one of copper, silver and gold.
- the voltage applied across the varactor diode ranges from 0V to 20V.
- the positive-negative direction of the varactor in the annular passage is the same as the direction of the electromagnetic field in the metamaterial.
- the base material is a non-magnetic dielectric material, and the dielectric constant of the base material ranges from 2 to 10, and the magnetic permeability of the base material is 1.
- any two of the electrically controllable microstructure units in the array of electrically controllable microstructure units have the same size.
- the metamaterial further includes: a coaxial through hole disposed on the inner metal structure, wherein the inner metal structure is connected to the feed network through the coaxial through hole for the varactor diode Apply voltage.
- the electromagnetic waves incident perpendicular to the surface of the metal structure are plane waves whose amplitude and phase are equal in perpendicular to the incident direction.
- a distance between any two adjacent electrically controllable microstructure units in the array of electrically controllable microstructure units is a preset distance, wherein the value of the preset distance is The range is 1/2 ⁇ to ⁇ , which is the wavelength of the electromagnetic wave in the metamaterial.
- a method for frequency adjustment of a metamaterial comprising the electrically controllable metamaterial of any of the above, the method comprising: obtaining a voltage applied to both ends of the varactor Determining whether the operating frequency of the metamaterial satisfies a preset frequency; if it is determined that the operating frequency of the metamaterial does not satisfy the preset frequency, adjusting a voltage value across the varactor to make the metamaterial The operating frequency satisfies the predetermined frequency, wherein the operating frequency of the metamaterial varies with the voltage across the varactor.
- the adjustment The voltage value at the two ends of the varactor includes: determining whether the operating frequency of the metamaterial is greater than or equal to a preset frequency; if it is determined that the operating frequency of the metamaterial is greater than or equal to a preset frequency, then controlling to reduce loading to the The voltage value across the varactor; if it is determined that the operating frequency of the metamaterial is less than the preset frequency, then controlling increases the voltage value applied to both ends of the varactor.
- a frequency adjusting device for a metamaterial comprising: any one of the above-described metamaterials, the device comprising: an acquiring unit for acquiring a loading to a varactor a voltage value at both ends; a determining unit, configured to determine whether the operating frequency of the metamaterial meets the preset frequency; and an adjusting unit, configured to determine that the working frequency of the metamaterial does not satisfy the preset frequency, and adjust the varactor
- the voltage values at both ends are such that the operating frequency of the metamaterial satisfies the predetermined frequency, wherein the operating frequency of the metamaterial varies with the voltage across the varactor.
- the adjusting unit includes: a determining module, configured to determine whether the operating frequency of the metamaterial is greater than or equal to a preset frequency; and the first control module is configured to determine that the operating frequency of the metamaterial is greater than or equal to In the case of the preset frequency, the control reduces the voltage value applied to the two ends of the varactor; the first control module is configured to increase the loading to the control when the operating frequency of the metamaterial is determined to be less than the preset frequency The voltage value across the varactor.
- a substrate material is used; an array of electrically controllable microstructure units, the array of electrically controllable microstructure units is disposed on the substrate material, and the array of electrically controllable microstructure units includes a plurality of electrically a microstructure control unit, wherein each electrically controllable microstructure unit comprises: an outer metal structure and an inner metal structure, the inner metal structure and the outer metal structure forming an annular channel; a varactor diode, the varactor diode Provided in the channel of each of the electrically controllable microstructure units for adjusting the operating frequency of each of the electrically controllable microstructure units in accordance with a voltage applied across the varactor diode, By arranging a variable capacitance varactor in each electrically controllable microstructure unit in the array of electrically controllable microstructure units to achieve the purpose of adjusting the operating frequency of each electrically controllable microstructure unit, thereby enabling The technical effect of the operating frequency of the metamaterial can be adjusted by the varactor dio
- FIG. 1 is a schematic view of a metamaterial according to an embodiment of the present invention.
- FIG. 2 is a schematic structural diagram of an electrically controllable microstructure unit array according to an embodiment of the invention.
- FIG. 3 is a schematic diagram showing a relationship between capacitance and frequency variation according to an embodiment of the present invention.
- FIG. 4 is a flow chart of a method for frequency adjustment of a metamaterial according to an embodiment of the present invention.
- FIG. 5 is a schematic diagram of a frequency adjustment device for a metamaterial according to an embodiment of the present invention.
- FIG. 1 is a schematic diagram of a metamaterial according to an embodiment of the invention
- FIG. 2 is a schematic structural diagram of an array of electrically controllable microstructure units according to an embodiment of the invention.
- the metamaterial comprises: a base material 11 and an electrically controllable micro-composition composed of at least one electrically controllable microstructure unit 13.
- the electrically controllable microstructure unit array is disposed on the substrate material, and the electrically controllable microstructure unit array comprises a plurality of electrically controllable microstructure units, wherein each electrically controllable microstructure unit comprises: an outer metal structure and an inner metal structure, The inner metal structure and the outer metal structure form an annular passage;
- a varactor diode 15 is disposed within the channel of each electrically controllable microstructure unit for regulating the operating frequency of each of the electrically controllable microstructure units in accordance with a voltage applied across the varactor.
- a variable capacitance varactor is disposed in each electrically controllable microstructure unit in the array of electrically controllable microstructure units to adjust the operating frequency of each electrically controllable microstructure unit.
- the purpose of the invention is to realize the technical effect that the operating frequency of the metamaterial can be adjusted by the varactor, thereby solving the technical problem in the prior art that the operating frequency of the metamaterial cannot be adjusted quickly and accurately.
- FIG. 2 is a 10 ⁇ 10 electrically controllable microstructure unit array in which 10 ⁇ 10 electrically controllable microstructure units 13 are included.
- any two electrically controllable microstructure units in the array of electrically controllable microstructure units have the same size, and the units are arranged in a tight array. That is, a plurality of identical electrically controllable microstructure units are included in the electrically controllable array of structural units, wherein the structure of any of the electrically controllable microstructure units 13 in the array of electrically controllable microstructure units is as shown in FIG. .
- the electrically controllable microstructure unit 13 includes an outer metal structure 132 and an inner metal structure 131, the inner metal structure 131 and the outer metal structure 132 forming an annular passage 17 having a spacing d.
- the outer metal structure 132 may be a square structure, and the inner metal structure 131 may be a rectangular metal patch.
- the inner metal structure is nested outside. Inside the metal structure, the above-mentioned passage 17 is formed.
- the material of the outer metal structure and the inner metal structure may be at least one of the following: copper, silver, and gold. Since the cost of the electrically controllable metamaterial is considered, as a preference, the material of the outer metal structure and the inner metal structure may be selected as copper. It should be noted that if the materials of the outer metal structure and the inner metal structure are selected as copper, gold may be plated on the copper surface to prevent oxidation of the electrically controllable metamaterial of the copper material due to long-term use.
- a varactor diode 15 can also be mounted in the channel 17 of each electrically controllable microstructure unit, wherein the varactor diode is a variable capacitance diode, which is loaded at both ends of the varactor diode.
- the capacitance of the varactor can be changed when the variable reverse bias DC voltage is applied.
- the adjustment range of the operating frequency of each of the electrically controllable microstructure units includes: 0.3 GHz to 300 GHz, that is, the operating frequency of each of the electrically controllable microstructure units can be adjusted within the above adjustment range.
- the voltage applied across the varactor diode ranges from 0V to 20V, and can be adjusted in the frequency range of 0.3 GHz to 300 GHz by loading the voltage values in the above range at both ends of the varactor diode.
- the operating frequency of an electrically controllable microstructured cell array is a configurable microstructured cell array.
- the varactor diode may be installed at the position shown in FIGS. 1 and 2 (ie, the lower side channel of the annular channel), and may also be disposed in the left channel and the right channel in the annular channel. It can also be inside the channel on the upper side. It should be noted that no matter which position of the varactor is disposed in the channel, it is ensured that the positive-negative direction of the varactor is the same as the direction of the electromagnetic field in the metamaterial, wherein the positive-negative direction may be the positive pole of the varactor
- the direction of the negative pole can also be the direction in which the negative pole of the varactor diode is directed to the positive pole. For example, when the direction of the electromagnetic field in the metamaterial is from the top to the bottom, the varactor can be placed at the position as shown in FIGS. 1 and 2 at this time.
- the electrically controllable metamaterial further comprises a substrate material 11, wherein the substrate material is used to mount the array of electrically controllable microstructure units.
- the above substrate material may be selected as a non-magnetic dielectric material, and the dielectric constant of the substrate material ranges from 2 to 10, and the magnetic permeability of the substrate material is 1.
- the passage 17 is a hollow passage which is a gap between the inner metal structure and the outer metal structure, the material exposed in the passage is the base material 11.
- the metamaterial further includes: a coaxial through hole 19, as shown in FIG. 1 and FIG. 2, the coaxial through hole 19 is disposed on the inner metal structure, and the inner metal structure passes through the coaxial through hole and Feed network connection, use Apply a reverse bias voltage to the varactor.
- the electromagnetic waves when electromagnetic waves are incident perpendicular to the surfaces of the outer metal structure and the inner metal structure, the electromagnetic waves may be plane waves, and the amplitude and phase of the electromagnetic waves are equal in perpendicular to the incident direction.
- the distance between any two adjacent electrically controllable microstructure units in the array of electrically controllable microstructure units is a preset distance, wherein The preset distance ranges from 1/2 ⁇ to ⁇ , which is the wavelength of the electromagnetic wave in the metamaterial. It should be noted that the distance between any two adjacent electrically controllable microstructure units in the metamaterials in different frequency bands is different.
- the researcher designs a metamaterial in which the working frequency of the metamaterial is required to be: 17.5 GHz to 13.4 GHz, and the selected center operating frequency f is 15 GHz.
- the metamaterial can be applied to a specific device, for example, to an antenna.
- a super-material flat panel antenna can adopt the above-mentioned designed electrically controllable metamaterial.
- the phase shift distribution of the array element can be controlled by the voltage of the varactor to achieve wide angle continuous scanning.
- the frequency adjustment process of the above-described super metamaterial is specifically described below. Specifically, when the operating frequency band of the electrically controllable metamaterial is 17.5 GHz to 13.4 GHz, the capacitance value of the varactor can be changed from 0.02 pF to 0.32 pF, and the relationship between the frequency and the capacitance is as shown in FIG. As shown in FIG. 3, when the capacitance is gradually increased, the frequency is gradually decreased; when the capacitance is gradually decreased, the frequency is gradually increased, that is, the relationship between the capacitance and the frequency is inversely proportional.
- the operating frequency of the electrically controllable metamaterial can be adjusted within a preset frequency band by controlling the size of the capacitance of the varactor.
- the selected electrically controllable metamaterial has a center operating frequency f of 15 GHz. If the current frequency of the electrically controllable metamaterial is detected to be greater than 15 GHz, the capacitance of the varactor can be increased to reduce the current current of electrically controllable metamaterials. frequency.
- the capacitance of the varactor can be adjusted by the reverse bias voltage of the capacitor loaded in the varactor, and then the operating frequency of the electrically controllable metamaterial can be adjusted by adjusting the capacitance.
- the capacitance of the varactor can be adjusted by adjusting the voltage of the varactor loaded on the electrically controllable metamaterial, and then according to the formula
- Adjust the operating frequency of the electrically controllable metamaterial By adopting the above-mentioned method for adjusting the operating frequency of the electrically controllable metamaterial, the operating frequency of the electrically controllable metamaterial can be adjusted in a preset frequency band, and the structure is simple, no complicated structure is needed, and the production is convenient. In the above manner, continuous control of the electromagnetic properties of the metamaterial can be realized by controlling the external bias voltage of the varactor while ensuring that the entire metamaterial does not change.
- an embodiment of a method of frequency adjustment of a metamaterial is also provided.
- 4 is a flow chart of a method for adjusting a frequency of a metamaterial according to an embodiment of the present invention. As shown in FIG. 4, the method includes the following steps:
- Step S402 obtaining a voltage value that is applied to both ends of the varactor, wherein the step is the above step one;
- Step S404 determining whether the operating frequency of the metamaterial meets the preset frequency, wherein the step is the above step two;
- Step S406 if it is determined that the operating frequency of the metamaterial does not satisfy the preset frequency, adjusting the voltage value across the varactor to make the working frequency of the metamaterial meet the preset frequency, wherein the working frequency of the metamaterial follows the varactor The voltage changes at both ends, wherein the step is the above step three.
- adjusting the voltage values at both ends of the varactor includes: determining whether the operating frequency of the metamaterial is greater than or equal to the preset frequency; and determining the operating frequency of the metamaterial If it is greater than or equal to the preset frequency, the control reduces the voltage value applied to both ends of the varactor; if it is determined that the working frequency of the metamaterial is less than the preset frequency, the control increases The value of the voltage carried across the varactor.
- a bias voltage may be applied to the varactor, and the capacitance of the varactor may be adjusted by an applied bias voltage.
- the operating frequency of the metamaterial of the controllable metamaterial can be adjusted in the above operating frequency band by an applied bias voltage.
- the central operating frequency (ie, the preset frequency) of the supermaterial of the controllable metamaterial is 15 GHz, but at the present moment, the operating frequency of the supermaterial of the controllable metamaterial is 16 GHz. At this time, it is necessary to reduce the super-controllable super material.
- the operating frequency of the material increases the capacitance of the varactor to reduce the operating frequency of the metamaterial of the controllable metamaterial. Therefore, the bias voltage of the varactor can be adjusted. To increase the capacitance of the varactor to reduce the operating frequency of the metamaterial of the controllable metamaterial.
- a variable capacitance varactor is disposed in each electrically controllable microstructure unit in the array of electrically controllable microstructure units to adjust the operating frequency of each electrically controllable microstructure unit.
- the purpose of the invention is to realize the technical effect that the operating frequency of the metamaterial can be adjusted by the varactor, thereby solving the technical problem in the prior art that the operating frequency of the metamaterial cannot be adjusted quickly and accurately.
- FIG. 5 is a schematic diagram of a frequency adjustment device for a metamaterial according to an embodiment of the present invention. As shown in FIG. 5, the device includes:
- An obtaining unit 51 configured to acquire a voltage value loaded to both ends of the varactor
- the determining unit 53 is configured to determine whether the working frequency of the metamaterial meets the preset frequency
- the adjusting unit 55 is configured to determine that the working frequency of the metamaterial does not satisfy the preset frequency, and adjust the voltage value at both ends of the varactor to make the working frequency of the metamaterial meet the preset frequency, wherein the operating frequency of the metamaterial varies with the variable frequency The voltage across the diode changes.
- the adjusting unit includes: a determining module, configured to determine whether the working frequency of the metamaterial is greater than or equal to the preset frequency; and the first control module is configured to: when determining that the working frequency of the metamaterial is greater than or equal to the preset frequency, The control reduces the voltage value applied to both ends of the varactor; the first control module is configured to increase the voltage value applied to both ends of the varactor when it is determined that the operating frequency of the metamaterial is less than the preset frequency.
- a variable capacitance varactor is disposed in each electrically controllable microstructure unit in the array of electrically controllable microstructure units to adjust the operating frequency of each electrically controllable microstructure unit.
- the purpose of the invention is to realize the technical effect that the operating frequency of the metamaterial can be adjusted by the varactor, thereby solving the technical problem in the prior art that the operating frequency of the metamaterial cannot be adjusted quickly and accurately.
- the disclosed technical contents may be implemented in other manners.
- the device embodiments described above are only schematic.
- the division of the unit may be a logical function division.
- there may be another division manner for example, multiple units or components may be combined or may be Integrate into another system, or some features can be ignored or not executed.
- the mutual coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interface, unit or module, and may be electrical or otherwise.
- the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of the embodiment.
- each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.
- the above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.
- the integrated unit if implemented in the form of a software functional unit and sold or used as a standalone product, may be stored in a computer readable storage medium.
- the technical solution of the present invention which is essential or contributes to the prior art, or all or part of the technical solution, may be embodied in the form of a software product stored in a storage medium. , including a number of instructions to make a computer device (can be a personal computer, server or network All or part of the steps of the method described in various embodiments of the invention are performed.
- the foregoing storage medium includes: a U disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a removable hard disk, a magnetic disk, or an optical disk, and the like. .
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Abstract
一种超材料及其频率调节方法和装置。其中,该超材料包括:基底材料(11);电可控微结构单元阵列,电可控微结构单元阵列设置在基底材料(11)上,电可控微结构单元阵列包括多个电可控微结构单元(13),其中,每个电可控微结构单元(13)包括:外金属结构(132)和内金属结构(131),内金属结构(131)和外金属结构(132)组成环形的通道(17);变容二极管(15),变容二极管(15)设置在每个电可控微结构单元(13)的通道(17)内,用于根据加载在变容二极管(15)两端的电压调节每个电可控微结构单元(13)的工作频率。该方案解决了现有技术中无法快速准确地调节超材料的工作频率的技术问题。
Description
本发明涉及控制领域,具体而言,涉及一种超材料及其频率调节方法和装置。
现有社会中的,超材料具有传统自然材料所不具备的超常物理性质的人工复合结构,但是,对于超材料来说,其奇异的电磁特性都有一个频带范围,超出这个范围,这个奇异的电磁特性会减弱甚至消失。
因此,相关技术人员就开始研究可控的超材料,在现有的研究成果中,可控超材料主要包括三大类:(1)机械式可控超材料;(2)加载微波开关;(3)加载可控材料(例如,铁氧体、液晶材料、石墨烯等)。其中,机械式可控的超材料由于要对移动量进行精确的控制,因此,使得体积相对较大,不易操作;加载微波开关的可控超材料其状态与开关的个数有关,要实现足够多的状态数就需要添加足够多的开关个数,导致结构的复杂度增加;而加载可控材料的超材料其调控的频率范围不大,而且需要外加偏置场导致结构复杂。针对上述的问题,目前尚未提出有效的解决方案。
问题的解决方案
本发明实施例提供了一种超材料及其频率调节方法和装置,以至少解决现有技术中无法快速准确地调节超材料的工作频率的技术问题。
根据本发明实施例的一个方面,提供了一种超材料,包括:基底材料;电可控微结构单元阵列,所述电可控微结构单元阵列设置在所述基底材料上,所述电可控微结构单元阵列包括多个电可控微结构单元,其中,每个电可控微结构单元包括:外金属结构和内金属结构,所述内金属结构和所述外金属结构组成环形的通道;变容二极管,所述变容二极管设置在所述每个电可控微结构单元的所述通道内,用于根据加载在所述变容二极管两端的电压调节所述每个所述电
可控微结构单元的工作频率。
进一步地,所述外金属结构为方框结构,所述内金属结构为矩形金属贴片,所述内金属结构嵌套于所述外金属结构内。
进一步地,所述工作频率的调节范围包括:0.3GHz至300GHz。
进一步地,所述外金属结构和所述内金属结构的材料为以下至少一种:铜、银和金。
进一步地,加载在所述变容二极管两端的电压的取值范围为:0V至20V。
进一步地,所述变容二极管在所述环形的通道中的正-负极方向与所述超材料中的电磁场方向相同。
进一步地,述基底材料为非磁性介质材料,并且所述基底材料的介电常数的取值范围为:2至10,所述基底材料的磁导率为1。
进一步地,所述电可控微结构单元阵列中任意两个所述电可控微结构单元的大小相同。
进一步地,所述超材料还包括:同轴通孔,设置在所述内金属结构上,所述内金属结构通过所述同轴通孔与馈电网络连接,用于向所述变容二极管施加电压。
进一步地,垂直于所述金属结构的表面入射的电磁波为平面波,所述电磁波的幅值和相位在垂直于入射方向上相等。
进一步地,在预设频段内,所述电可控微结构单元阵列中任意相邻的两个电可控微结构单元之间的距离为预设距离,其中,所述预设距离的取值范围为:1/2λ至λ,所述λ为所述超材料中电磁波的波长。
根据本发明实施例的另一方面,还提供了一种超材料的频率调节方法,包括上述任一项所述的电可控超材料,所述方法包括:获取加载至变容二极管两端的电压值;判断超材料的工作频率是否满足预设频率;如果判断出所述超材料的工作频率不满足所述预设频率,则调整所述变容二极管两端的电压值,以使所述超材料的工作频率满足所述预设频率,其中,所述超材料的工作频率随所述变容二极管两端的电压变化。
进一步地,如果判断出所述超材料的工作频率不满足所述预设频率,则调整所
述变容二极管两端的电压值包括:判断所述超材料的工作频率是否大于或者等于预设频率;如果判断出所述超材料的工作频率大于或者等于预设频率,则控制降低加载至所述变容二极管两端的电压值;如果判断出所述超材料的工作频率小于预设频率,则控制增加加载至所述变容二极管两端的电压值。
根据本发明实施例的另一方面,还提供了一种超材料的频率调节装置,其特征在于,包括上述任一项超材料,所述装置包括:获取单元,用于获取加载至变容二极管两端的电压值;判断单元,用于判断超材料的工作频率是否满足预设频率;调整单元,用于判断出所述超材料的工作频率不满足所述预设频率,调整所述变容二极管两端的电压值,以使所述超材料的工作频率满足所述预设频率,其中,所述超材料的工作频率随所述变容二极管两端的电压变化。
进一步地,所述调整单元包括:判断模块,用于判断所述超材料的工作频率是否大于或者等于预设频率;第一控制模块,用于在判断出所述超材料的工作频率大于或者等于预设频率的情况下,控制降低加载至所述变容二极管两端的电压值;第一控制模块,用于在判断出所述超材料的工作频率小于预设频率的情况下,控制增加加载至所述变容二极管两端的电压值。
发明的有益效果
在本发明实施例中,采用基底材料;电可控微结构单元阵列,所述电可控微结构单元阵列设置在所述基底材料上,所述电可控微结构单元阵列包括多个电可控微结构单元,其中,每个电可控微结构单元包括:外金属结构和内金属结构,所述内金属结构和所述外金属结构组成环形的通道;变容二极管,所述变容二极管设置在所述每个电可控微结构单元的所述通道内,用于根据加载在所述变容二极管两端的电压调节所述每个所述电可控微结构单元的工作频率的方式,通过在电可控微结构单元阵列中每个电可控微结构单元中设置一个电容可变的变容二极管,以达到调节每个电可控微结构单元的工作频率的目的,从而实现了能够通过变容二极管就可以调节超材料的工作频率的技术效果,进而解决了现有技术中无法快速准确地调节超材料的工作频率的技术问题。
对附图的简要说明
此处所说明的附图用来提供对本发明的进一步理解,构成本申请的一部分,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1是根据本发明实施例的一种超材料的示意图;
图2是根据本发明实施例的一种电可控微结构单元阵列的结构示意图;
图3是根据本发明实施例的一种电容和频率变化关系的示意图;
图4是根据本发明实施例的一种超材料的频率调节方法的流程图;以及
图5是根据本发明实施例的一种超材料的频率调节装置的示意图。
发明实施例
为了使本技术领域的人员更好地理解本发明方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分的实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都应当属于本发明保护的范围。
需要说明的是,本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
根据本发明实施例,提供了一种超材料的实施例。下面结合图1和图2对本发明实施例进行说明。图1是根据本发明实施例的一种超材料的示意图,图2是根据本发明实施例的一种电可控微结构单元阵列的结构示意图。如图1和图2所示,该超材料包括:基底材料11、由至少一个电可控微结构单元13组成的电可控微
结构单元阵列和变容二极管15,其中:
电可控微结构单元阵列设置在基底材料上,电可控微结构单元阵列包括多个电可控微结构单元,其中,每个电可控微结构单元包括:外金属结构和内金属结构,内金属结构和外金属结构组成环形的通道;
变容二极管15设置在每个电可控微结构单元的通道内,用于根据加载在变容二极管两端的电压调节每个电可控微结构单元的工作频率。
在本发明实施例中,通过在电可控微结构单元阵列中每个电可控微结构单元中设置一个电容可变的变容二极管,以达到调节每个电可控微结构单元的工作频率的目的,从而实现了能够通过变容二极管就可以调节超材料的工作频率的技术效果,进而解决了现有技术中无法快速准确地调节超材料的工作频率的技术问题。
如图2所示的为10×10的电可控微结构单元阵列,在该阵列中,包括10×10个电可控微结构单元13。如图2所示,在本发明实施例中,电可控微结构单元阵列中的任意两个电可控微结构单元的大小均相同,各个单元紧密的阵列排布。也即在电可控为结构单元阵列中包括多个相同的电可控微结构单元,其中,电可控微结构单元阵列中任一个电可控微结构单元13的结构图如图1所示。在图1中,电可控微结构单元13包括外金属结构132和内金属结构131,内金属结构131和外金属结构132组成间距为d的环形的通道17。在如图2所示的电可控微结构单元13中,外金属结构132可以为方框结构,内金属结构131可以为矩形金属贴片,如图1所示,内金属结构嵌套于外金属结构内,并形成上述通道17。
上述外金属结构和内金属结构的材料可以为以下至少一种:铜、银和金。由于考虑到电可控超材料的成本,作为优选,外金属结构和内金属结构的材料可以选取为铜。需要说明的是,如果上述外金属结构和内金属结构的材料选取为铜,则可以在铜表面镀金,以防止铜材料的电可控超材料由于长时间使用造成的氧化。
在本发明实施例中,还可以在每个电可控微结构单元的通道17中安装一个变容二极管15,其中,该变容二极管为电容可变的二极管,当在变容二极管两端加载可变反偏置直流电压时,即可以改变该变容二极管的电容。根据公式
用可知,当变容二极管的电容发生改变时,该电可控微结构单元13的
ω
发生了改变,其中,
ω
即为电可控微结构单元13对应的瞬时工作频率。
在本发明的一个可选实施方式中,每个电可控微结构单元工作频率的调节范围包括:0.3GHz至300GHz,即可以在上述调节范围内调节每个电可控微结构单元工作频率。
进一步地,加载在变容二极管两端的电压的取值范围为:0V至20V,通过在该变容二极管的两端加载上述范围内的电压值即可实现在0.3GHz至300GHz的频率范围内调节电可控微结构单元阵列的工作频率。
在本发明实施例中,变容二极管可以安装在如图1和图2中所示的位置(即环形通道的下侧通道),还可以设置在环形的通道中的左侧通道、右侧通道,还可以为上侧的通道内。需要说明的是,无论变容二极管设置在通道的哪个位置,都要保证变容二极管的正-负极方向与超材料中的电磁场方向相同,其中,上述正-负极方向可以为变容二极管的正极指向负极的方向,还可以为变容二极管的负极指向正极的方向。例如,当超材料中的电磁场方向为由上到下的垂直方向时,此时可以将变容二极管设置在如图1和图2中所示的位置。
在本发明实施例中,上述电可控超材料还包括基底材料11,其中,基底材料用于安装上述电可控微结构单元阵列。上述基底材料可以选取为非磁性介质材料,并且基底材料的介电常数的取值范围为:2至10,基底材料的磁导率为1。如图1所示,由于通道17为中空的通道,该通道为内金属结构和外金属结构之间的缝隙,因此,在该通道裸露出来的材料即为基底材料11。
在本发明实施例中,上述超材料还包括:同轴通孔19,如图1和图2所示,该同轴通孔19设置在内金属结构上,内金属结构通过同轴通孔与馈电网络连接,用
于向变容二极管施加反向偏置电压。
可选地,当有电磁垂直于外金属结构和内金属结构的表面入射时,该电磁波可以为平面波,并且该电磁波的幅值和相位在垂直于入射方向上相等。
在本发明实施例中,当超材料的工作频率在预设频段内时,电可控微结构单元阵列中任意相邻的两个电可控微结构单元之间的距离为预设距离,其中,预设距离的取值范围为:1/2λ至λ,λ为超材料中电磁波的波长。需要说明的是,处于不同频段的超材料中的任意两个相邻的电可控微结构单元之间的距离不相同。
下面以具体实施例对本发明进行说明。例如,研发人员设计一个超材料,其中,要求该超材料的工作频段为:17.5GHz-13.4GHz,选取的中心工作频率f为15GHz。此时,根据选取的工作频段可以选取该超材料中的电磁波的波长λ为20mm;并且上述内金属结构和外金属结构的材料可以选取为铜,基底材料可以为F4B材料,其中,该基底材料的介电常数ε=3.0,磁导率μ=1;以及该可控超材料单元阵列中每个电可控微结构单元可以为“方环型”,其中,每个电可控微结构单元中外金属结构的外边长和宽相等,例如选取为a=7.5mm,内金属结构(例如,矩形金属贴片)的长与宽可以为6mm;上述通道的宽度可以为0.75mm,上述外金属结构和内金属结构的金属厚度可以为0.035mm,基底材料厚可以为0.3mm,电可控微结构单元阵列中任意相邻的两个电可控微结构单元之间的距离为预设距离为7.5mm。
在设计好上述超材料之后,则可以将该超材料应用到具体的设备中,例如应用到天线中,例如,超材料的平板天线中可以采用上述设计好的电可控超材料。在超材料中采用加载变容二极管的电可控超材料时,可以通过控制变容二极管的电压调控阵列单元相移分布,实现宽角度连续扫描。
下面具体介绍上述设置好的超材料的频率调节过程。具体地,当电可控超材料的工作频段为17.5GHz-13.4GHz时,变容二极管的电容值可以从0.02pF至0.32pF之间进行变化,频率与电容的变化关系如图3所示。如图3所示,当电容逐渐增大时,频率逐渐减小;当电容逐渐减小时,频率逐渐增大,即,电容和频率之间的关系为反比例关系。因此,在本发明实施例中,当变容二极管的电容增大时,电可控超材料的工作频段将减小,当变容二极管的电容减小时,电可控超
材料的工作频段将增大。因此,可以通过控制变容二极管的电容的大小在预设频段内调整电可控超材料的工作频率。例如,选取的电可控超材料的中心工作频率f为15GHz,如果检测到电可控超材料的当前频率大于15GHz,则可以增大变容二极管的电容,以降低电可控超材料的当前频率。其中,可以通过加载在变容二极管的电容的反偏置电压调节该变容二极管的电容,进而,通过调节电容来调节电可控超材料的工作频率。
综上,在本发明上述实施例中,可以通过调节加载在电可控超材料上变容二极管的电压来调节变容二极管的电容,然后根据公式
调节电可控超材料的工作频率。采用上述本发明提供的调节电可控超材料的工作频率的方式,可以实现在预设频段内调节电可控超材料的工作频率,并且结构简单,无需复杂的结构,方便制作。采用上述方式可以在保证整个超材料不发生变化的情况下,只需控制变容二极管的外加偏置电压即可实现对超材料电磁性能的连续控制。
根据本发明实施例,还提供了一种超材料的频率调节方法的实施例。图4是根据本发明实施例的一种超材料的频率调节方法的流程图,如图4所示,该方法包括如下步骤:
步骤S402,获取加载至变容二极管两端的电压值,其中,该步骤即上述步骤一;
步骤S404,判断超材料的工作频率是否满足预设频率,其中,该步骤即上述步骤二;
步骤S406,如果判断出超材料的工作频率不满足预设频率,则调整变容二极管两端的电压值,以使超材料的工作频率满足预设频率,其中,超材料的工作频率随变容二极管两端的电压变化,其中,该步骤即上述步骤三。
进一步地,如果判断出超材料的工作频率不满足预设频率,则调整变容二极管两端的电压值包括:判断超材料的工作频率是否大于或者等于预设频率;如果判断出超材料的工作频率大于或者等于预设频率,则控制降低加载至变容二极管两端的电压值;如果判断出超材料的工作频率小于预设频率,则控制增加加
载至变容二极管两端的电压值。
具体地,在图1和图2所示的超材料中,可以对变容二极管外加偏置电压,进而通过外加的偏置电压调整变容二极管的电容。例如,如果某一超材料工作频段为17.5GHz-13.4GHz内,则可以通过外加的偏置电压在上述工作频段内调节可控超材料的超材料的工作频率。假设,可控超材料的超材料的中心工作频率(即预设频率)为15GHz,但是当前时刻,可控超材料的超材料的工作频率为16GHz,此时,需要降低可控超材料的超材料的工作频率,通过如图3所示的关系图可知,增大变容二极管的电容值可以降低可控超材料的超材料的工作频率,因此,可以通过调整变容二极管的外加偏置电压来增大变容二极管的电容值,以降低可控超材料的超材料的工作频率。
在本发明实施例中,通过在电可控微结构单元阵列中每个电可控微结构单元中设置一个电容可变的变容二极管,以达到调节每个电可控微结构单元的工作频率的目的,从而实现了能够通过变容二极管就可以调节超材料的工作频率的技术效果,进而解决了现有技术中无法快速准确地调节超材料的工作频率的技术问题。
根据本发明实施例,还提供了一种超材料的频率调节装置的实施例。图5是根据本发明实施例的一种超材料的频率调节装置的示意图,如图5所示,该装置包括:
获取单元51,用于获取加载至变容二极管两端的电压值;
判断单元53,用于判断超材料的工作频率是否满足预设频率;
调整单元55,用于判断出超材料的工作频率不满足预设频率,调整变容二极管两端的电压值,以使超材料的工作频率满足预设频率,其中,超材料的工作频率随变容二极管两端的电压变化。
其中,调整单元包括:判断模块,用于判断超材料的工作频率是否大于或者等于预设频率;第一控制模块,用于在判断出超材料的工作频率大于或者等于预设频率的情况下,控制降低加载至变容二极管两端的电压值;第一控制模块,用于在判断出超材料的工作频率小于预设频率的情况下,控制增加加载至变容二极管两端的电压值。
在本发明实施例中,通过在电可控微结构单元阵列中每个电可控微结构单元中设置一个电容可变的变容二极管,以达到调节每个电可控微结构单元的工作频率的目的,从而实现了能够通过变容二极管就可以调节超材料的工作频率的技术效果,进而解决了现有技术中无法快速准确地调节超材料的工作频率的技术问题。
上述本发明实施例序号仅仅为了描述,不代表实施例的优劣。
在本发明的上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
在本申请所提供的几个实施例中,应该理解到,所揭露的技术内容,可通过其它的方式实现。其中,以上所描述的装置实施例仅仅是示意性的,例如所述单元的划分,可以为一种逻辑功能划分,实际实现时可以有另外的划分方式,例如多个单元或组件可以结合或者可以集成到另一个系统,或一些特征可以忽略,或不执行。另一点,所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口,单元或模块的间接耦合或通信连接,可以是电性或其它的形式。
所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。
另外,在本发明各个实施例中的各功能单元可以集成在一个处理单元中,也可以是各个单元单独物理存在,也可以两个或两个以上单元集成在一个单元中。上述集成的单元既可以采用硬件的形式实现,也可以采用软件功能单元的形式实现。
所述集成的单元如果以软件功能单元的形式实现并作为独立的产品销售或使用时,可以存储在一个计算机可读取存储介质中。基于这样的理解,本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的全部或部分可以以软件产品的形式体现出来,该计算机软件产品存储在一个存储介质中,包括若干指令用以使得一台计算机设备(可为个人计算机、服务器或者网络设
备等)执行本发明各个实施例所述方法的全部或部分步骤。而前述的存储介质包括:U盘、只读存储器(ROM,Read-Only Memory)、随机存取存储器(RAM,Random Access Memory)、移动硬盘、磁碟或者光盘等各种可以存储程序代码的介质。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (14)
- 一种超材料,其特征在于,包括:基底材料;电可控微结构单元阵列,所述电可控微结构单元阵列设置在所述基底材料上,所述电可控微结构单元阵列包括多个电可控微结构单元,其中,每个电可控微结构单元包括:外金属结构和内金属结构,所述内金属结构和所述外金属结构组成环形的通道;变容二极管,所述变容二极管设置在所述每个电可控微结构单元的所述通道内,用于根据加载在所述变容二极管两端的电压调节所述每个电可控微结构单元的工作频率。
- 根据权利要求1所述的超材料,其特征在于,所述外金属结构为方框结构,所述内金属结构为矩形金属贴片,所述内金属结构嵌套于所述外金属结构内。
- 根据权利要求1所述的超材料,其特征在于,所述工作频率的调节范围包括:0.3GHz至300GHz。
- 根据权利要求1所述的超材料,其特征在于,加载在所述变容二极管两端的电压的取值范围为:0V至20V。
- 根据权利要求1所述的超材料,其特征在于,所述变容二极管在所述环形的通道中的正-负极方向与所述超材料中的电磁场方向相同。
- 根据权利要求1所述的超材料,其特征在于,所述基底材料为非磁性介质材料,并且所述基底材料的介电常数的取值范围为:2至10,所述基底材料的磁导率为1。
- 根据权利要求1所述的超材料,其特征在于,所述电可控微结构单元阵列中任意两个所述电可控微结构单元的大小相同。
- 根据权利要求1至7中任一项所述的超材料,其特征在于,所述超材料还包括:同轴通孔,设置在所述内金属结构上,所述内金属结构通过所述 同轴通孔与馈电网络连接,用于向所述变容二极管施加电压。
- 根据权利要求1所述的超材料,其特征在于,垂直于所述外金属结构和所述内金属结构的表面入射的电磁波为平面波,所述电磁波的幅值和相位在垂直于入射方向上相等。
- 根据权利要求9所述的超材料,其特征在于,在预设频段内,所述电可控微结构单元阵列中任意相邻的两个电可控微结构单元之间的距离为预设距离,其中,所述预设距离的取值范围为:1/2λ至λ,所述λ为所述超材料中电磁波的波长。
- 一种超材料的频率调节方法,其特征在于,包括上述权利要求1至10中任一项所述的超材料,所述方法包括:步骤一:获取加载至变容二极管两端的电压值;步骤二:判断超材料的工作频率是否满足预设频率;步骤三:如果判断出所述超材料的工作频率不满足所述预设频率,则调整所述变容二极管两端的电压值,以使所述超材料的工作频率满足所述预设频率,其中,所述超材料的工作频率随所述变容二极管两端的电压变化。
- 根据权利要求11所述的方法,其特征在于,所述步骤三包括:判断所述超材料的工作频率是否大于或者等于预设频率;如果判断出所述超材料的工作频率大于或者等于预设频率,则控制降低加载至所述变容二极管两端的电压值;如果判断出所述超材料的工作频率小于预设频率,则控制增加加载至所述变容二极管两端的电压值。
- 一种超材料的频率调节装置,其特征在于,包括上述权利要求1至10中任一项所述的超材料,所述装置包括:获取单元,用于获取加载至变容二极管两端的电压值;判断单元,用于判断超材料的工作频率是否满足预设频率;调整单元,用于判断出所述超材料的工作频率不满足所述预设频率,调整所述变容二极管两端的电压值,以使所述超材料的工作 频率满足所述预设频率,其中,所述超材料的工作频率随所述变容二极管两端的电压变化。
- 根据权利要求13所述的装置,其特征在于,所述调整单元包括:判断模块,用于判断所述超材料的工作频率是否大于或者等于预设频率;第一控制模块,用于在判断出所述超材料的工作频率大于或者等于预设频率的情况下,控制降低加载至所述变容二极管两端的电压值;第一控制模块,用于在判断出所述超材料的工作频率小于预设频率的情况下,控制增加加载至所述变容二极管两端的电压值。
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CN113206385B (zh) * | 2021-04-09 | 2022-04-19 | 华中科技大学 | 一种智能超表面结构单元的控制方法及控制装置 |
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