WO2017146541A1 - High frequency device capable of selectively controlling penetration depth of skin using magnetic field - Google Patents

High frequency device capable of selectively controlling penetration depth of skin using magnetic field Download PDF

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Publication number
WO2017146541A1
WO2017146541A1 PCT/KR2017/002105 KR2017002105W WO2017146541A1 WO 2017146541 A1 WO2017146541 A1 WO 2017146541A1 KR 2017002105 W KR2017002105 W KR 2017002105W WO 2017146541 A1 WO2017146541 A1 WO 2017146541A1
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high frequency
magnetic field
module
skin
electrode
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PCT/KR2017/002105
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French (fr)
Korean (ko)
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김건형
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주식회사 메드믹스
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Publication of WO2017146541A1 publication Critical patent/WO2017146541A1/en

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/02—Details
    • A61N1/04—Electrodes
    • A61N1/06—Electrodes for high-frequency therapy
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/02—Details
    • A61N1/08—Arrangements or circuits for monitoring, protecting, controlling or indicating
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/40—Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/40—Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals
    • A61N1/403—Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals for thermotherapy, e.g. hyperthermia

Definitions

  • the present invention relates to a radio frequency device, and more particularly, to a radio frequency device capable of selectively controlling the depth of skin penetration using a magnetic field.
  • the invasive method is to artificially form a wound by reaching the microneedles through the skin epidermis and into the dermis, and then, as the body's natural healing ability fills the wounds with new flesh, aging collagen is activated and elastic. Wrinkles or scars on the skin are treated.
  • this invasive approach presents problems with the risk of infection and pain causing through microneedles.
  • the non-invasive method uses high frequencies generated from electrodes in contact with the skin surface to raise the temperature of the skin, thereby promoting blood circulation, activating aged collagen to restore skin elasticity, and inducing the production of new collagen. It is a high frequency treatment method that improves drooping skin and fine wrinkles.
  • the epidermal layer of the skin could be heated using high frequency, but there was a limitation that the high frequency could not be penetrated into the epidermal layer of the skin and heated to the dermis layer.
  • Korean Patent Publication No. 10-2011-0080872 name of the invention: high frequency treatment device, published date: July 13, 2011
  • Patent No. 10-1065611 invention Name: high frequency skin care device, date of publication: September 19, 2011.
  • the present invention has been proposed to solve the above problems of the conventionally proposed methods, by generating a magnetic field at a position orthogonal to the direction in which the high frequency current flows, so that the force acting on the high frequency current is reduced by the Fleming's left hand law. It is an object of the present invention to provide a high frequency device capable of selectively controlling the depth of penetration of the skin by using a magnetic field, which allows the high frequency current to flow inside the skin to be heated to the dermis layer of the skin.
  • the present invention by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, by using a magnetic field that can selectively adjust the depth of the skin that the high frequency current can penetrate It is another object of the present invention to provide a high frequency device capable of selectively controlling the depth of skin penetration.
  • a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field
  • An electrode module comprising an electrode pair consisting of a (+) electrode and a ( ⁇ ) electrode, wherein a high frequency current flows in the electrode pair;
  • a magnetic field generating module disposed at a position orthogonal to an electrode pair located in the electrode module and generating a magnetic field
  • the magnetic field is generated by the magnetic field generating module so that the force acting on the high frequency current flowing in the electrode pair is directed to the inside of the skin by the Fleming's left-hand rule so that the high frequency current flows inside the skin. It is done.
  • the direction of the magnetic field generated through the magnetic field generating module is reversed, so that the direction of the force acting on the high frequency current flowing in the electrode pair of the electrode module It may further include a magnetic field conversion module to be maintained in the skin direction.
  • the apparatus may further include an intensity adjusting module for adjusting the intensity of the high frequency current flowing in the electrode module and the intensity of the magnetic field generated by the magnetic field generating module.
  • the intensity control module More preferably, the intensity control module,
  • the intensity of the high frequency current flowing in the electrode module and the intensity of the magnetic field generated by the magnetic field generating module By adjusting the intensity of the high frequency current flowing in the electrode module and the intensity of the magnetic field generated by the magnetic field generating module, the magnitude of the force acting on the high frequency current flowing in the electrode pair of the electrode module is adjusted, so that the high frequency current penetrates. You can selectively adjust the depth of skin you can.
  • the electrode module Preferably, the electrode module, the electrode module, and
  • It may include a plurality of electrode pairs.
  • the magnetic field generation module More preferably, the magnetic field generation module,
  • a plurality of electrodes may be disposed at positions orthogonal to each electrode pair positioned in the electrode module.
  • the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, and the force acting on the high frequency current is applied to Fleming's left hand law.
  • a high frequency electric current can flow to the inside of the skin to heat up to the dermis layer of the skin.
  • the present invention by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, it is possible to selectively adjust the depth of the skin that the high frequency current can penetrate.
  • FIG. 1 is a view showing the configuration of a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
  • FIG. 2 is a view showing the configuration of an electrode module in a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
  • FIG 3 is a view showing a state in which a magnetic field generating module is disposed at a position orthogonal to an electrode pair in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention.
  • the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, the force acting on the high frequency current is Fleming Figure showing the direction of the downward direction by the left hand law.
  • FIG. 5 is a view showing the appearance of a general AC waveform in the high-frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
  • FIG. 6 is a high-frequency device capable of selectively controlling skin penetration depth by using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by the magnetic field is the law of the left hand of Fleming Drawing showing the state facing up by.
  • FIG. 7 is a high frequency device capable of selectively adjusting the depth of skin penetration using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by inverting the direction of the magnetic field The figure which shows the state maintained in this downward direction.
  • FIG. 8 illustrates a comparison of the flow of high frequency current in a magnetic field deactivation state and the flow of high frequency current in a magnetic field activation state in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention.
  • a high frequency device capable of selectively controlling the depth of skin penetration using a magnetic field according to an embodiment of the present invention
  • the high frequency device 10 capable of selectively adjusting skin penetration depth by using a magnetic field according to an embodiment of the present invention includes an electrode module 100 and a magnetic field generating module 200. Can be configured.
  • the magnetic field conversion module 300, the high frequency generation module 400, the power supply module 500 and the intensity control module 600 may be further included.
  • each configuration of the high frequency device 10 capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention will be described.
  • the electrode module 100 includes an electrode pair consisting of a positive electrode and a negative electrode, and a high frequency current may flow in the electrode pair.
  • FIG. 2 is a diagram illustrating a configuration of an electrode module in a high frequency device capable of selectively adjusting skin penetration depth by using a magnetic field according to an embodiment of the present invention.
  • the electrode module 100 may be configured to include an electrode pair consisting of a (+) electrode and a ( ⁇ ) electrode, and according to an embodiment, as shown in FIG. 2 (b).
  • a plurality of electrode pairs may be included, and a high frequency current may flow in each electrode pair.
  • the magnetic field generating module 200 is disposed at a position orthogonal to the pair of electrodes located in the electrode module 100 and generates a magnetic field.
  • 3 is a view showing a state in which a magnetic field generating module is disposed at a position orthogonal to an electrode pair in a high frequency device capable of selectively controlling skin penetration depth using a magnetic field according to an embodiment of the present invention.
  • the magnetic field generating module 200 is disposed at a position orthogonal to the electrode pairs, and according to an embodiment, as shown in FIG. 3B, when a plurality of electrode pairs exist, respectively,
  • the plurality of magnetic field generating modules 200 are disposed at positions orthogonal to the electrode pairs of, and may generate magnetic fields at positions disposed respectively.
  • the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, the force acting on the high frequency current is Fleming
  • Fleming This figure shows the state of facing downward by the left hand law of.
  • Fleming's left-hand rule is a rule that determines the direction of the force that the conductor receives in the direction of the magnetic field and the current flowing through the conductor when current flows through the conductor in the magnetic field.
  • Fleming's left-hand rule is a rule that determines the direction of the force that the conductor receives in the direction of the magnetic field and the current flowing through the conductor when current flows through the conductor in the magnetic field.
  • the force acting on the high frequency current may be directed downward as shown in FIG. 4 (b).
  • the magnetic field is generated through the magnetic field generating module 200 so that the force acting on the high frequency current flowing in the electrode pair of the electrode module 100 is directed downward (inside the skin) by the left hand rule of Fleming.
  • a high frequency electric current can flow inside the skin.
  • FIG. 5 is a view showing the appearance of a general AC waveform in a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
  • the horizontal axis represents time change
  • the vertical axis represents voltage level
  • the part indicated by (+) and the part indicated by ( ⁇ ) indicate opposite directions of flowing current.
  • the high frequency current flowing in the electrode pair of the electrode module 100 is 100,000 Hz or more alternating current, and the direction of the high frequency current flowing in the electrode pair may change periodically with time.
  • FIG. 6 it will be described that the direction of the force acting on the high frequency current is changed by the magnetic field when the direction of the high frequency current is reversed.
  • FIG. 6 is a high-frequency device capable of selectively controlling skin penetration depth by using a magnetic field according to an embodiment of the present invention
  • the force acting on the high frequency current by the magnetic field is the law of the left hand of Fleming
  • FIG. 6 (a) the direction of the high frequency current flowing in the A '-> A direction changes in the A-> A' direction as time changes, and the direction of the magnetic field is shown in Fig. 6 (a).
  • the direction of the force acting on the high frequency current by the magnetic field can be directed upward as shown in Fig. 6 (b) by Fleming's left hand law.
  • the direction of the force acting on the high frequency current may also change periodically from the inside to the outside of the skin, and as a result, there is a limit point in which the high frequency current cannot continuously flow inside the skin. do.
  • the magnetic field conversion module 300 of the present invention when the direction of the high frequency current flowing in the electrode pair of the electrode module 100 is reversed, the direction of the magnetic field generated through the magnetic field generation module 200 is changed. By reversely converting, the direction of the force acting on the high frequency current flowing in the electrode pair of the electrode module 100 can be maintained in the skin direction.
  • the role of the magnetic field conversion module 300 will be described in detail with reference to FIG. 7 below.
  • the magnetic field conversion module 300 changes the direction of the magnetic field as shown in 7 (a) when the direction of the high frequency current flowing in the A '-> A direction changes in the high A-> A' direction as time changes. By converting in the opposite direction, the direction of the force acting on the high frequency current by the magnetic field can be kept downward (inside the skin).
  • the magnetic field conversion module 300 periodically changes the direction of the magnetic field as the direction of the high frequency current changes periodically, thereby maintaining the direction of the force acting on the high frequency current toward the downward direction (inside the skin), High frequency currents can flow continuously inside the skin.
  • FIG. 8 illustrates a comparison of the flow of high frequency current in a magnetic field deactivation state and the flow of high frequency current in a magnetic field activation state in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention.
  • One drawing. according to the present invention, by generating a magnetic field through the magnetic field generating module 200, and periodically converts the direction of the magnetic field through the magnetic field conversion module 300 as the direction of the high frequency current is periodically changed, as shown in FIG. As such, it is possible to allow high frequency current to flow continuously inside the skin (dermis layer).
  • the high frequency generation module 400 serves to generate a high frequency.
  • the high frequency generating module 400 and the electrode module 100 are connected by a cable, and the high frequency generated by the high frequency generating module 400 is transmitted to the electrode module 100, thereby providing the electrodes of the electrode module 100. High frequency currents can flow in the pair.
  • the power supply module 500 serves to supply power so that each component of the high frequency device 10 capable of selectively adjusting the skin penetration depth using a magnetic field can be operated by receiving power from the outside.
  • the intensity adjusting module 600 controls the intensity of the high frequency current flowing in the electrode module 100 and the strength of the magnetic field generated by the magnetic field generating module 200.
  • a force called electric magnetic force acts on the wire due to a magnetic field generated around the wire.
  • the generated electric magnetic force can be obtained through Equation 1.
  • B is the strength of the magnetic field
  • I is the strength of the current
  • l is the length of the wire
  • ⁇ represents the angle between the direction of the wire and the magnetic field.
  • the magnitude of the electric magnetic force is proportional to the strength of the magnetic field and the strength of the current.
  • the intensity control module 600 of the present invention the intensity of the high frequency current flowing in the electrode module 100, and the intensity of the magnetic field generated through the magnetic field generation module 200 to control the high frequency current generated by the magnetic field
  • the magnitude of the force electromagnettic force
  • size of the force (electromagnetic force) acting on a high frequency electric current a high frequency electric current can flow inside a skin more.
  • the magnetic field is generated at a position orthogonal to the direction in which the high-frequency current flows, so that the force acting on the high-frequency current
  • a high frequency current can flow inside the skin to allow heating to the dermis layer of the skin.
  • the present invention by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, it is possible to selectively adjust the depth of the skin that the high frequency current can penetrate.

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Abstract

A high frequency device capable of selectively controlling a penetration depth of a skin using a magnetic field, according to the present invention, generates a magnetic field at a position orthogonal to a direction in which high frequency current flows and directs a force acting on the high frequency current toward the inside of the skin by Fleming's left hand rule, thereby allowing the high frequency current to flow further inside the skin to heat the skin to a dermal layer thereof.

Description

자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치Radio frequency device for selective control of skin penetration depth using magnetic field
본 발명은 고주파 장치에 관한 것으로서, 보다 구체적으로는 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에 관한 것이다.The present invention relates to a radio frequency device, and more particularly, to a radio frequency device capable of selectively controlling the depth of skin penetration using a magnetic field.
최근 여드름 치료, 모공 축소, 주름 제거, 흉터 제거 등의 피부를 치료하기 위해 여러 가지 방법이 시도되고 있으며, 대표적인 피부 치료 시술방법으로, 침습적 방식과 비침습적 방식이 있다.Recently, various methods have been tried to treat skin such as acne treatment, pore reduction, wrinkle removal, scar removal, and the like, and typical skin treatment procedures include invasive and non-invasive methods.
침습적 방식은, 마이크로니들을 피부 표피층을 지나 진피층까지 도달시켜 인위적으로 상처를 형성한 다음, 인체의 자연 치유 능력에 의해 상처들에 새 살이 차오르는 과정에서, 노화된 콜라겐이 활성화되고, 탄력을 가지게 되어 피부의 주름이나 흉터 등이 치료되는 방식이다. 하지만, 이러한 침습적 방식은 마이크로니들을 통한 감염의 위험 및 통증 유발의 문제점이 존재한다.The invasive method is to artificially form a wound by reaching the microneedles through the skin epidermis and into the dermis, and then, as the body's natural healing ability fills the wounds with new flesh, aging collagen is activated and elastic. Wrinkles or scars on the skin are treated. However, this invasive approach presents problems with the risk of infection and pain causing through microneedles.
비침습적 방식은, 피부 표면에 접촉된 전극으로부터 발생하는 고주파를 이용하여 피부의 온도를 상승시킴으로써, 혈액 순환을 촉진시키고, 노화된 콜라겐을 활성화시켜 피부의 탄력을 회복시키며, 새로운 콜라겐의 생성을 유도하여 처진 피부와 잔주름을 개선 시켜주는 고주파 시술 방식으로서, 현재 가장 널리 사용되고 있는 방식이다. 하지만, 기존의 비침습적 고주파 시술에서는, 고주파를 이용해 피부의 표피층은 가열할 수 있었으나, 고주파를 보다 피부의 표피층 안쪽으로 침투시켜 진피층까지 가열시킬 수 없는 한계가 있었다.The non-invasive method uses high frequencies generated from electrodes in contact with the skin surface to raise the temperature of the skin, thereby promoting blood circulation, activating aged collagen to restore skin elasticity, and inducing the production of new collagen. It is a high frequency treatment method that improves drooping skin and fine wrinkles. However, in the conventional non-invasive radiofrequency procedure, the epidermal layer of the skin could be heated using high frequency, but there was a limitation that the high frequency could not be penetrated into the epidermal layer of the skin and heated to the dermis layer.
이와 같은 고주파를 이용한 장치와 관련하여, 공개특허공보 제10-2011-0080872호(발명의 명칭: 고주파 치료장치, 공개일자: 2011년 07월 13일), 등록특허 제10-1065611호(발명의 명칭: 고주파 피부 미용 장치, 공고일자: 2011년 09월 19일) 등이 개시된 바 있다.With respect to such a device using a high frequency, Korean Patent Publication No. 10-2011-0080872 (name of the invention: high frequency treatment device, published date: July 13, 2011), Patent No. 10-1065611 (invention) Name: high frequency skin care device, date of publication: September 19, 2011).
본 발명은 기존에 제안된 방법들의 상기와 같은 문제점들을 해결하기 위해 제안된 것으로서, 고주파 전류가 흐르는 방향과 직교되는 위치에 자기장을 생성하여, 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 피부 안쪽으로 향하도록 함으로써, 고주파 전류가 보다 피부의 안쪽에 흐르게 하여 피부의 진피층까지 가열시킬 수 있는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치를 제공하는 것을 그 목적으로 한다.The present invention has been proposed to solve the above problems of the conventionally proposed methods, by generating a magnetic field at a position orthogonal to the direction in which the high frequency current flows, so that the force acting on the high frequency current is reduced by the Fleming's left hand law. It is an object of the present invention to provide a high frequency device capable of selectively controlling the depth of penetration of the skin by using a magnetic field, which allows the high frequency current to flow inside the skin to be heated to the dermis layer of the skin.
또한, 본 발명은, 고주파 전류의 세기 및 자기장의 세기를 조절하여, 고주파 전류에 작용하는 힘의 크기를 조절함으로써, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치를 제공하는 것을 또 다른 목적으로 한다.In addition, the present invention, by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, by using a magnetic field that can selectively adjust the depth of the skin that the high frequency current can penetrate It is another object of the present invention to provide a high frequency device capable of selectively controlling the depth of skin penetration.
상기한 목적을 달성하기 위한 본 발명의 특징에 따른, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치는,According to a feature of the present invention for achieving the above object, a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field,
자기장을 이용한 고주파 장치로서,A high frequency device using a magnetic field,
(+)전극 및 (-)전극으로 이루어지는 전극 쌍을 포함하며, 상기 전극 쌍 내에 고주파 전류가 흐르는 전극 모듈; 및An electrode module comprising an electrode pair consisting of a (+) electrode and a (−) electrode, wherein a high frequency current flows in the electrode pair; And
상기 전극 모듈 내에 위치한 전극 쌍과 직교되는 위치에 배치되며, 자기장을 생성하는 자기장 생성 모듈을 포함하되,A magnetic field generating module disposed at a position orthogonal to an electrode pair located in the electrode module and generating a magnetic field;
상기 자기장 생성 모듈을 통해 자기장을 생성하여, 상기 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 피부 안쪽으로 향하도록 해서, 상기 고주파 전류가 피부 안쪽에서 흐르게 하는 것을 그 구성상의 특징으로 한다.The magnetic field is generated by the magnetic field generating module so that the force acting on the high frequency current flowing in the electrode pair is directed to the inside of the skin by the Fleming's left-hand rule so that the high frequency current flows inside the skin. It is done.
바람직하게는,Preferably,
상기 전극 모듈의 전극 쌍 내에 흐르는 고주파 전류의 방향이 반대로 변할 때, 상기 자기장 생성 모듈을 통해 생성된 자기장의 방향을 반대로 변환하여, 상기 전극 모듈의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘의 방향이 피부 안쪽 방향으로 유지되도록 하는 자기장 변환 모듈을 더 포함할 수 있다.When the direction of the high frequency current flowing in the electrode pair of the electrode module is reversed, the direction of the magnetic field generated through the magnetic field generating module is reversed, so that the direction of the force acting on the high frequency current flowing in the electrode pair of the electrode module It may further include a magnetic field conversion module to be maintained in the skin direction.
바람직하게는,Preferably,
고주파를 발생하는 고주파 발생 모듈을 더 포함할 수 있다.It may further include a high frequency generation module for generating a high frequency.
바람직하게는,Preferably,
외부로부터 전원을 공급받을 수 있는 전원 공급 모듈을 더 포함할 수 있다.It may further include a power supply module that can receive power from the outside.
바람직하게는,Preferably,
상기 전극 모듈 내에 흐르는 고주파 전류의 세기, 및 상기 자기장 생성 모듈에 의해 생성되는 자기장의 세기를 조절할 수 있는 세기 조절 모듈을 더 포함할 수 있다.The apparatus may further include an intensity adjusting module for adjusting the intensity of the high frequency current flowing in the electrode module and the intensity of the magnetic field generated by the magnetic field generating module.
더욱 바람직하게는, 상기 세기 조절 모듈은,More preferably, the intensity control module,
상기 전극 모듈 내에 흐르는 고주파 전류의 세기, 및 상기 자기장 생성 모듈에 의해 생성되는 자기장의 세기를 조절하여, 상기 전극 모듈의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘의 크기를 조절해서, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있다.By adjusting the intensity of the high frequency current flowing in the electrode module and the intensity of the magnetic field generated by the magnetic field generating module, the magnitude of the force acting on the high frequency current flowing in the electrode pair of the electrode module is adjusted, so that the high frequency current penetrates. You can selectively adjust the depth of skin you can.
바람직하게는, 상기 전극 모듈은,Preferably, the electrode module,
복수 개의 전극 쌍을 포함할 수 있다.It may include a plurality of electrode pairs.
더욱 바람직하게는, 상기 자기장 생성 모듈은,More preferably, the magnetic field generation module,
상기 전극 모듈 내에 위치한 각각의 전극 쌍과 직교되는 위치에 복수 개 배치될 수 있다.A plurality of electrodes may be disposed at positions orthogonal to each electrode pair positioned in the electrode module.
본 발명에서 제안하고 있는 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에 따르면, 고주파 전류가 흐르는 방향과 직교되는 위치에 자기장을 생성하여, 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 피부 안쪽으로 향하도록 함으로써, 고주파 전류가 보다 피부의 안쪽에 흐르게 하여 피부의 진피층까지 가열시킬 수 있다.According to the high frequency device capable of selectively controlling the depth of skin penetration using the magnetic field proposed by the present invention, the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, and the force acting on the high frequency current is applied to Fleming's left hand law. By directing it to the inside of the skin, a high frequency electric current can flow to the inside of the skin to heat up to the dermis layer of the skin.
또한, 본 발명은, 고주파 전류의 세기 및 자기장의 세기를 조절하여, 고주파 전류에 작용하는 힘의 크기를 조절함으로써, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있다.In addition, the present invention, by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, it is possible to selectively adjust the depth of the skin that the high frequency current can penetrate.
도 1은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치의 구성을 도시한 도면.1 is a view showing the configuration of a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 전극 모듈의 구성을 도시한 도면.2 is a view showing the configuration of an electrode module in a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
도 3은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 자기장 생성 모듈이 전극 쌍과 직교되는 위치에 배치되어 있는 모습을 도시한 도면.3 is a view showing a state in which a magnetic field generating module is disposed at a position orthogonal to an electrode pair in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention.
도 4는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류가 흐르는 방향과 직교되는 위치에 자기장이 생성되어, 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 아래 방향으로 향하고 있는 모습을 도시한 도면.4 is a high frequency device capable of selectively adjusting the depth of skin penetration using a magnetic field according to an embodiment of the present invention, the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, the force acting on the high frequency current is Fleming Figure showing the direction of the downward direction by the left hand law.
도 5는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 일반적인 교류 파형의 모습을 도시한 도면.5 is a view showing the appearance of a general AC waveform in the high-frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention.
도 6은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류의 방향이 반대로 변할 때, 자기장에 의해 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 위로 향하고 있는 모습을 도시한 도면.6 is a high-frequency device capable of selectively controlling skin penetration depth by using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by the magnetic field is the law of the left hand of Fleming Drawing showing the state facing up by.
도 7은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류의 방향이 반대로 변할 때, 자기장의 방향을 반대로 변환하여, 고주파 전류에 작용하는 힘이 아래 방향으로 유지되는 모습을 도시한 도면.7 is a high frequency device capable of selectively adjusting the depth of skin penetration using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by inverting the direction of the magnetic field The figure which shows the state maintained in this downward direction.
도 8은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 자기장 비활성화 상태에서의 고주파 전류의 흐름과 자기장 활성화 상태에서의 고주파 전류의 흐름을 비교하여 도시한 도면.FIG. 8 illustrates a comparison of the flow of high frequency current in a magnetic field deactivation state and the flow of high frequency current in a magnetic field activation state in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention. One drawing.
<부호의 설명><Description of the code>
10: 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치10: a high frequency device capable of selectively controlling the depth of skin penetration using a magnetic field according to an embodiment of the present invention
100: 전극 모듈100: electrode module
200: 자기장 생성 모듈200: magnetic field generating module
300: 자기장 변형 모듈300: magnetic field deformation module
400 고주파 발생 모듈400 high frequency generation module
500: 전원 공급 모듈500: power supply module
600: 세기 조절 모듈600: intensity control module
이하에서는 첨부된 도면을 참조하여 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명을 용이하게 실시할 수 있도록 바람직한 실시예를 상세히 설명한다. 다만, 본 발명의 바람직한 실시예를 상세하게 설명함에 있어, 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략한다. 또한, 유사한 기능 및 작용을 하는 부분에 대해서는 도면 전체에 걸쳐 동일 또는 유사한 부호를 사용한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. However, in describing the preferred embodiment of the present invention in detail, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. In addition, the same or similar reference numerals are used throughout the drawings for parts having similar functions and functions.
덧붙여, 명세서 전체에서, 어떤 부분이 다른 부분과 ‘연결’되어 있다고 할 때, 이는 ‘직접적으로 연결’되어 있는 경우뿐만 아니라, 그 중간에 다른 소자를 사이에 두고 ‘간접적으로 연결’되어 있는 경우도 포함한다. 또한, 어떤 구성요소를 ‘포함’한다는 것은, 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있다는 것을 의미한다.In addition, throughout the specification, when a part is 'connected' to another part, it is not only 'directly connected' but also 'indirectly connected' with another element in between. Include. In addition, "including" a certain component means that it may further include other components, except to exclude other components unless specifically stated otherwise.
도 1은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치의 구성을 도시한 도면이다. 도 1에 도시된 바와 같이, 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10)는, 전극 모듈(100), 자기장 생성 모듈(200)을 포함하여 구성될 수 있다. 또한, 실시예에 따라, 자기장 변환 모듈(300), 고주파 발생 모듈(400), 전원 공급 모듈(500) 및 세기 조절 모듈(600)을 더 포함하여 구성될 수 있다. 이하에서는, 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10)의 각각의 구성에 대하여 설명하기로 한다.1 is a view showing the configuration of a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention. As shown in FIG. 1, the high frequency device 10 capable of selectively adjusting skin penetration depth by using a magnetic field according to an embodiment of the present invention includes an electrode module 100 and a magnetic field generating module 200. Can be configured. In addition, according to an embodiment, the magnetic field conversion module 300, the high frequency generation module 400, the power supply module 500 and the intensity control module 600 may be further included. Hereinafter, each configuration of the high frequency device 10 capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention will be described.
전극 모듈(100)은 (+)전극 및 (-)전극으로 이루어지는 전극 쌍을 포함하며, 전극 쌍 내에는 고주파 전류가 흐를 수 있다. 도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 전극 모듈의 구성을 도시한 도면이다. 도 2에 도시된 바와 같이, 전극 모듈(100)은 (+)전극 및 (-)전극으로 이루어지는 전극 쌍을 포함하며 구성될 수 있고, 실시예에 따라서는, 도 2(b)에 도시된 바와 같이 복수 개의 전극 쌍을 포함하여 구성될 수 있으며, 각각의 전극 쌍 내에는 고주파 전류가 흐를 수 있다.The electrode module 100 includes an electrode pair consisting of a positive electrode and a negative electrode, and a high frequency current may flow in the electrode pair. FIG. 2 is a diagram illustrating a configuration of an electrode module in a high frequency device capable of selectively adjusting skin penetration depth by using a magnetic field according to an embodiment of the present invention. As shown in FIG. 2, the electrode module 100 may be configured to include an electrode pair consisting of a (+) electrode and a (−) electrode, and according to an embodiment, as shown in FIG. 2 (b). Likewise, a plurality of electrode pairs may be included, and a high frequency current may flow in each electrode pair.
자기장 생성 모듈(200)은 전극 모듈(100) 내에 위치한 전극 쌍과 직교되는 위치에 배치되며, 자기장을 생성하는 역할을 한다. 도 3은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 자기장 생성 모듈이 전극 쌍과 직교되는 위치에 배치되어 있는 모습을 도시한 도면이다. 도 3에 도시된 바와 같이, 자기장 생성 모듈(200)은 전극 쌍과 직교되는 위치에 배치되고, 실시예에 따라, 도 3(b)에 도시된 바와 같이, 복수 개의 전극 쌍이 존재하는 경우, 각각의 전극 쌍과 직교되는 위치에 복수 개의 자기장 생성 모듈(200)이 배치되며, 각각 배치된 위치에서 자기장을 생성할 수 있다.The magnetic field generating module 200 is disposed at a position orthogonal to the pair of electrodes located in the electrode module 100 and generates a magnetic field. 3 is a view showing a state in which a magnetic field generating module is disposed at a position orthogonal to an electrode pair in a high frequency device capable of selectively controlling skin penetration depth using a magnetic field according to an embodiment of the present invention. As shown in FIG. 3, the magnetic field generating module 200 is disposed at a position orthogonal to the electrode pairs, and according to an embodiment, as shown in FIG. 3B, when a plurality of electrode pairs exist, respectively, The plurality of magnetic field generating modules 200 are disposed at positions orthogonal to the electrode pairs of, and may generate magnetic fields at positions disposed respectively.
도 4는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류가 흐르는 방향과 직교되는 위치에 자기장이 생성되어, 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 아래 방향으로 향하고 있는 모습을 도시한 도면이다. 여기서, 플레밍의 왼손 법칙은 자기장 속에 있는 도선에 전류가 흐를 때 자기장의 방향과 도선에 흐르는 전류의 방향으로 도선이 받는 힘의 방향을 결정하는 규칙이다. 실시예에 따라, 전극 모듈(100)의 전극 쌍 내의 고주파 전류가 흐르는 방향과 자기장 생성 모듈(200)을 통해 생성된 자기장의 방향이 도 4(a)에 도시된 바와 같을 때, 플레밍의 왼손 법칙에 따라 고주파 전류에 작용하는 힘은 도 4(b)에 도시된 바와 같이 아래 방향으로 향할 수 있다. 이처럼 본 발명에서는, 자기장 생성 모듈(200)을 통해 자기장을 생성하여, 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 아래 방향(피부 안쪽)으로 향하도록해서, 고주파 전류가 피부 안쪽에서 흐르게 할 수 있다.4 is a high frequency device capable of selectively adjusting the depth of skin penetration using a magnetic field according to an embodiment of the present invention, the magnetic field is generated at a position orthogonal to the direction in which the high frequency current flows, the force acting on the high frequency current is Fleming This figure shows the state of facing downward by the left hand law of. Here, Fleming's left-hand rule is a rule that determines the direction of the force that the conductor receives in the direction of the magnetic field and the current flowing through the conductor when current flows through the conductor in the magnetic field. According to an embodiment, when the direction in which the high frequency current flows in the electrode pair of the electrode module 100 and the direction of the magnetic field generated through the magnetic field generating module 200 are as shown in FIG. As a result, the force acting on the high frequency current may be directed downward as shown in FIG. 4 (b). As described above, in the present invention, the magnetic field is generated through the magnetic field generating module 200 so that the force acting on the high frequency current flowing in the electrode pair of the electrode module 100 is directed downward (inside the skin) by the left hand rule of Fleming. Thus, a high frequency electric current can flow inside the skin.
도 5는 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 일반적인 교류 파형의 모습을 도시한 도면이다. 도 5에서 가로축은 시간의 변화, 세로축은 전압의 크기를 나타내며, (+)로 표시한 부분과 (-)로 표시한 부분은 흐르는 전류의 방향이 서로 반대임을 나타낸다. 이처럼, 교류를 도선에 흘려주면 도 5에 도시된 바와 같이, 전류의 방향이 시간에 따라 주기적으로 변할 수 있다. 본 발명에서 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류는 100,000㎐ 이상의 교류 전류로서, 전극 쌍 내에 흐르는 고주파 전류의 방향은 시간에 따라 주기적으로 변할 수 있다. 이하에서는, 도 6을 참조하여 고주파 전류의 방향이 반대로 변할 때, 자기장에 의해 고주파 전류에 작용하는 힘의 방향이 변하는 것에 대해 설명하기로 한다.5 is a view showing the appearance of a general AC waveform in a high frequency device capable of selectively adjusting the skin penetration depth by using a magnetic field according to an embodiment of the present invention. In FIG. 5, the horizontal axis represents time change, and the vertical axis represents voltage level, and the part indicated by (+) and the part indicated by (−) indicate opposite directions of flowing current. As such, when the alternating current flows through the conductive wire, the direction of the current may change periodically with time. In the present invention, the high frequency current flowing in the electrode pair of the electrode module 100 is 100,000 ㎐ or more alternating current, and the direction of the high frequency current flowing in the electrode pair may change periodically with time. Hereinafter, with reference to FIG. 6, it will be described that the direction of the force acting on the high frequency current is changed by the magnetic field when the direction of the high frequency current is reversed.
도 6은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류의 방향이 반대로 변할 때, 자기장에 의해 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 위로 향하고 있는 모습을 도시한 도면이다. 도 6(a)에 도시된 바와 같이, A′ -> A 방향으로 흐르던 고주파 전류의 방향이 시간에 변함에 따라 A -> A′ 방향으로 변하고, 자기장의 방향이 도 6(a)에 도시된 바와 같을 때, 자기장에 의해 고주파 전류에 작용하는 힘의 방향은 플레밍의 왼손 법칙에 의해 도 6(b)에 도시된 바와 같이 위로 향할 수 있다. 즉, 고주파 전류의 방향이 주기적으로 변함에 따라, 고주파 전류에 작용하는 힘의 방향도 피부 안쪽에서 바깥쪽으로 주기적으로 변할 수 있고, 그 결과 고주파 전류가 피부 안쪽에서 지속적으로 흐르게 할 수 없는 한계점이 발생한다.6 is a high-frequency device capable of selectively controlling skin penetration depth by using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by the magnetic field is the law of the left hand of Fleming It is a figure which shows the state which turned up by. As shown in Fig. 6 (a), the direction of the high frequency current flowing in the A '-> A direction changes in the A-> A' direction as time changes, and the direction of the magnetic field is shown in Fig. 6 (a). As can be seen, the direction of the force acting on the high frequency current by the magnetic field can be directed upward as shown in Fig. 6 (b) by Fleming's left hand law. That is, as the direction of the high frequency current changes periodically, the direction of the force acting on the high frequency current may also change periodically from the inside to the outside of the skin, and as a result, there is a limit point in which the high frequency current cannot continuously flow inside the skin. do.
이와 같은 문제점을 개선하기 위해 본 발명의 자기장 변환 모듈(300)에서는, 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류의 방향이 반대로 변할 때, 자기장 생성 모듈(200)을 통해 생성된 자기장의 방향을 반대로 변환하여, 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘의 방향이 피부 안쪽 방향으로 유지되도록 할 수 있다. 자기장 변환 모듈(300)의 역할에 대해서는 이하에서 도 7을 참조하여 자세히 설명하도록 한다.In order to improve such a problem, in the magnetic field conversion module 300 of the present invention, when the direction of the high frequency current flowing in the electrode pair of the electrode module 100 is reversed, the direction of the magnetic field generated through the magnetic field generation module 200 is changed. By reversely converting, the direction of the force acting on the high frequency current flowing in the electrode pair of the electrode module 100 can be maintained in the skin direction. The role of the magnetic field conversion module 300 will be described in detail with reference to FIG. 7 below.
도 7은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 고주파 전류의 방향이 반대로 변할 때, 자기장의 방향을 반대로 변환하여, 고주파 전류에 작용하는 힘이 아래 방향으로 유지되는 모습을 도시한 도면이다. 자기장 변환 모듈(300)은, A′ -> A 방향으로 흐르던 고주파 전류의 방향이 시간에 변함에 따라 고 A -> A′ 방향으로 변할 때, 7(a)에 도시된 바와 같이 자기장의 방향을 반대 방향으로 변환하여, 자기장에 의해 고주파 전류에 작용하는 힘의 방향을 아래 방향(피부 안쪽)으로 유지시킬 수 있다. 이처럼, 자기장 변환 모듈(300)은, 고주파 전류의 방향이 주기적으로 변함에 따라, 자기장의 방향을 주기적으로 변환시켜, 고주파 전류에 작용하는 힘의 방향이 아래 방향(피부 안쪽)으로 향하게 유지함으로써, 고주파 전류가 피부 안쪽에서 지속적으로 흐르게 할 수 있다.7 is a high frequency device capable of selectively adjusting the depth of skin penetration using a magnetic field according to an embodiment of the present invention, when the direction of the high frequency current is reversed, the force acting on the high frequency current by inverting the direction of the magnetic field It is a figure which shows the state maintained in this downward direction. The magnetic field conversion module 300 changes the direction of the magnetic field as shown in 7 (a) when the direction of the high frequency current flowing in the A '-> A direction changes in the high A-> A' direction as time changes. By converting in the opposite direction, the direction of the force acting on the high frequency current by the magnetic field can be kept downward (inside the skin). As described above, the magnetic field conversion module 300 periodically changes the direction of the magnetic field as the direction of the high frequency current changes periodically, thereby maintaining the direction of the force acting on the high frequency current toward the downward direction (inside the skin), High frequency currents can flow continuously inside the skin.
도 8은 본 발명의 일실시예에 따른 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에서, 자기장 비활성화 상태에서의 고주파 전류의 흐름과 자기장 활성화 상태에서의 고주파 전류의 흐름을 비교하여 도시한 도면이다. 본 발명에 따르면, 자기장 생성 모듈(200)을 통해 자기장을 생성하고, 고주파 전류의 방향이 주기적으로 변함에 따라 자기장 변환 모듈(300)을 통해 자기장의 방향을 주기적으로 변환시킴으로써, 도 8에 도시된 바와 같이, 고주파 전류가 피부 안쪽(진피층)에서 지속적으로 흐를 수 있도록 할 수 있다.FIG. 8 illustrates a comparison of the flow of high frequency current in a magnetic field deactivation state and the flow of high frequency current in a magnetic field activation state in a high frequency device capable of selectively adjusting skin penetration depth using a magnetic field according to an embodiment of the present invention. One drawing. According to the present invention, by generating a magnetic field through the magnetic field generating module 200, and periodically converts the direction of the magnetic field through the magnetic field conversion module 300 as the direction of the high frequency current is periodically changed, as shown in FIG. As such, it is possible to allow high frequency current to flow continuously inside the skin (dermis layer).
고주파 발생 모듈(400)은 고주파를 발생시키는 역할을 한다. 실시예에 따라, 고주파 발생 모듈(400)과 전극 모듈(100)은 케이블로 연결되며, 고주파 발생 모듈(400)에서 발생된 고주파가 전극 모듈(100)에 전달되어, 전극 모듈(100)의 전극 쌍 내에 고주파 전류가 흐를 수 있다.The high frequency generation module 400 serves to generate a high frequency. According to an embodiment, the high frequency generating module 400 and the electrode module 100 are connected by a cable, and the high frequency generated by the high frequency generating module 400 is transmitted to the electrode module 100, thereby providing the electrodes of the electrode module 100. High frequency currents can flow in the pair.
전원 공급 모듈(500)은 외부로부터 전원을 공급받아 자기장을 이용한 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10)의 각각의 구성이 작동될 수 있도록 전원을 공급하는 역할을 한다.The power supply module 500 serves to supply power so that each component of the high frequency device 10 capable of selectively adjusting the skin penetration depth using a magnetic field can be operated by receiving power from the outside.
세기 조절 모듈(600)은 전극 모듈(100) 내에 흐르는 고주파 전류의 세기, 및 자기장 생성 모듈(200)에 의해 생성되는 자기장의 세기를 조절하는 역할을 한다. 일반적으로 자기장 내에 전선을 두고 전류를 흘려주면 전선 주위에 발생하는 자기장으로 인하여 전선에 전기자기력이라는 힘이 작용하게 되는데, 이때 발생되는 전기자기력은 수학식 1을 통해 구할 수 있다.The intensity adjusting module 600 controls the intensity of the high frequency current flowing in the electrode module 100 and the strength of the magnetic field generated by the magnetic field generating module 200. In general, when a current is passed through a wire in a magnetic field, a force called electric magnetic force acts on the wire due to a magnetic field generated around the wire. The generated electric magnetic force can be obtained through Equation 1.
수학식 1
Figure PCTKR2017002105-appb-M000001
 Equation 1
Figure PCTKR2017002105-appb-M000001
여기서, B는 자기장의 세기, I는 전류의 세기, l은 전선의 길이, θ는 전선과 자기장의 방향이 이루는 각도를 나타낸다.Here, B is the strength of the magnetic field, I is the strength of the current, l is the length of the wire, θ represents the angle between the direction of the wire and the magnetic field.
즉, 전기자기력의 크기는 자기장의 세기 및 전류의 세기에 비례한다. 본 발명의 세기 조절 모듈(600)에서는, 전극 모듈(100) 내에 흐르는 고주파 전류의 세기, 및 자기장 생성 모듈(200)을 통해 생성된 자기장의 세기를 조절하여, 자기장에 의해 발생되는 고주파 전류에 작용하는 힘(전기자기력)의 크기를 조절함으로써, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있다. 예를 들어, 고주파 전류를 보다 피부 깊이 침투 시키고 싶은 경우, 세기 조절 모듈(600)을 통해 전극 모듈(100) 내에 흐르는 고주파 전류의 세기 및 자기장 생성 모듈(200)을 통해 생성된 자기장의 세기를 세게 조절하여, 고주파 전류에 작용하는 힘(전기자기력)의 크기를 크게 함으로써, 보다 피부 안쪽에서 고주파 전류가 흐르게 할 수 있다.That is, the magnitude of the electric magnetic force is proportional to the strength of the magnetic field and the strength of the current. In the intensity control module 600 of the present invention, the intensity of the high frequency current flowing in the electrode module 100, and the intensity of the magnetic field generated through the magnetic field generation module 200 to control the high frequency current generated by the magnetic field By controlling the magnitude of the force (electromagnetic force), it is possible to selectively adjust the depth of the skin through which the high-frequency current can penetrate. For example, if the high frequency current is to penetrate deeper into the skin, the intensity of the high frequency current flowing in the electrode module 100 through the intensity control module 600 and the intensity of the magnetic field generated through the magnetic field generation module 200 are increased. By adjusting and increasing the magnitude | size of the force (electromagnetic force) acting on a high frequency electric current, a high frequency electric current can flow inside a skin more.
이상 설명한 바와 같이, 본 발명에서 제안하고 있는 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치에 따르면, 고주파 전류가 흐르는 방향과 직교되는 위치에 자기장을 생성하여, 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 피부 안쪽으로 향하도록 함으로써, 고주파 전류가 보다 피부의 안쪽에 흐르게 하여 피부의 진피층까지 가열시킬 수 있다.As described above, according to the high-frequency device capable of selectively adjusting the skin penetration depth by using the magnetic field proposed by the present invention, the magnetic field is generated at a position orthogonal to the direction in which the high-frequency current flows, so that the force acting on the high-frequency current By directing the inside of the skin according to Fleming's left-hand rule, a high frequency current can flow inside the skin to allow heating to the dermis layer of the skin.
또한, 본 발명은, 고주파 전류의 세기 및 자기장의 세기를 조절하여, 고주파 전류에 작용하는 힘의 크기를 조절함으로써, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있다.In addition, the present invention, by adjusting the intensity of the high frequency current and the strength of the magnetic field, by controlling the magnitude of the force acting on the high frequency current, it is possible to selectively adjust the depth of the skin that the high frequency current can penetrate.
이상 설명한 본 발명은 본 발명이 속한 기술분야에서 통상의 지식을 가진 자에 의하여 다양한 변형이나 응용이 가능하며, 본 발명에 따른 기술적 사상의 범위는 아래의 특허청구범위에 의하여 정해져야 할 것이다.The present invention described above may be variously modified or applied by those skilled in the art, and the scope of the technical idea according to the present invention should be defined by the following claims.

Claims (8)

  1. 자기장을 이용한 고주파 장치로서,A high frequency device using a magnetic field,
    (+)전극 및 (-)전극으로 이루어지는 전극 쌍을 포함하며, 상기 전극 쌍 내에 고주파 전류가 흐르는 전극 모듈(100); 및An electrode module (100) comprising an electrode pair consisting of a (+) electrode and a (-) electrode, through which a high frequency current flows in the electrode pair; And
    상기 전극 모듈(100) 내에 위치한 전극 쌍과 직교되는 위치에 배치되며, 자기장을 생성하는 자기장 생성 모듈(200)을 포함하되,It includes a magnetic field generating module 200 is disposed in a position orthogonal to the electrode pair located in the electrode module 100, and generates a magnetic field,
    상기 자기장 생성 모듈(200)을 통해 자기장을 생성하여, 상기 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘이 플레밍의 왼손 법칙에 의해 피부 안쪽으로 향하도록 해서, 상기 고주파 전류가 피부 안쪽에서 흐르게 하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).By generating a magnetic field through the magnetic field generating module 200, the force acting on the high frequency current flowing in the electrode pair is directed to the inside of the skin by the Fleming's left hand law, so that the high frequency current flows inside the skin. A high frequency device (10) capable of selectively controlling the depth of skin penetration using a magnetic field.
  2. 제1항에 있어서,The method of claim 1,
    상기 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류의 방향이 반대로 변할 때, 상기 자기장 생성 모듈(200)을 통해 생성된 자기장의 방향을 반대로 변환하여, 상기 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘의 방향이 피부 안쪽 방향으로 유지되도록 하는 자기장 변환 모듈(300)을 더 포함하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).When the direction of the high frequency current flowing in the electrode pair of the electrode module 100 is reversed, the direction of the magnetic field generated through the magnetic field generation module 200 is reversed, and flows in the electrode pair of the electrode module 100. A high frequency device capable of selectively controlling the depth of skin penetration using a magnetic field, characterized in that it further comprises a magnetic field conversion module 300 to maintain the direction of the force acting on the high frequency current in the skin direction.
  3. 제1항에 있어서,The method of claim 1,
    고주파를 발생하는 고주파 발생 모듈(400)을 더 포함하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).High frequency device (10) capable of selectively controlling the depth of skin penetration using a magnetic field, characterized in that it further comprises a high frequency generating module 400 for generating a high frequency.
  4. 제1항에 있어서,The method of claim 1,
    외부로부터 전원을 공급받을 수 있는 전원 공급 모듈(500)을 더 포함하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).High frequency device (10) capable of selectively controlling the depth of skin penetration using a magnetic field, characterized in that it further comprises a power supply module 500 that can be supplied with power from the outside.
  5. 제1항에 있어서,The method of claim 1,
    상기 전극 모듈(100) 내에 흐르는 고주파 전류의 세기, 및 상기 자기장 생성 모듈(200)에 의해 생성되는 자기장의 세기를 조절할 수 있는 세기 조절 모듈(600)을 더 포함하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).Using the magnetic field, characterized in that it further comprises an intensity control module 600 that can adjust the strength of the high-frequency current flowing in the electrode module 100, and the strength of the magnetic field generated by the magnetic field generating module 200 High frequency device (10) capable of selectively controlling the depth of skin penetration.
  6. 제5항에 있어서, 상기 세기 조절 모듈(600)은,The method of claim 5, wherein the intensity control module 600,
    상기 전극 모듈(100) 내에 흐르는 고주파 전류의 세기, 및 상기 자기장 생성 모듈(200)에 의해 생성되는 자기장의 세기를 조절하여, 상기 전극 모듈(100)의 전극 쌍 내에 흐르는 고주파 전류에 작용하는 힘의 크기를 조절해서, 고주파 전류가 침투할 수 있는 피부의 깊이를 선택적으로 조절할 수 있는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).The intensity of the high frequency current flowing in the electrode module 100 and the strength of the magnetic field generated by the magnetic field generating module 200 are adjusted to control the high frequency current flowing in the electrode pair of the electrode module 100. By adjusting the size, it is possible to selectively control the depth of the skin through which the high frequency current can penetrate, the high frequency device capable of selective control of the skin penetration depth by using a magnetic field.
  7. 제1항에 있어서, 상기 전극 모듈(100)은,The method of claim 1, wherein the electrode module 100,
    복수 개의 전극 쌍을 포함하는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).A high frequency device (10) capable of selectively controlling the depth of skin penetration using a magnetic field, characterized in that it comprises a plurality of electrode pairs.
  8. 제7항에 있어서, 상기 자기장 생성 모듈(200)은,The method of claim 7, wherein the magnetic field generation module 200,
    상기 전극 모듈(100) 내에 위치한 각각의 전극 쌍과 직교되는 위치에 복수 개 배치되는 것을 특징으로 하는, 자기장을 이용하여 피부 침투 깊이의 선택적 조절이 가능한 고주파 장치(10).A high frequency device (10) capable of selectively controlling the depth of skin penetration using a magnetic field, characterized in that a plurality is disposed in a position orthogonal to each electrode pair located in the electrode module (100).
PCT/KR2017/002105 2016-02-26 2017-02-24 High frequency device capable of selectively controlling penetration depth of skin using magnetic field WO2017146541A1 (en)

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