WO2017130573A1 - Power conversion device and thermal resistance measurement method for power module - Google Patents
Power conversion device and thermal resistance measurement method for power module Download PDFInfo
- Publication number
- WO2017130573A1 WO2017130573A1 PCT/JP2016/086140 JP2016086140W WO2017130573A1 WO 2017130573 A1 WO2017130573 A1 WO 2017130573A1 JP 2016086140 W JP2016086140 W JP 2016086140W WO 2017130573 A1 WO2017130573 A1 WO 2017130573A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermal resistance
- power module
- gate
- phase
- voltage
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
Definitions
- the present invention relates to a power conversion device having a power module incorporating a plurality of semiconductor elements, and more particularly to a technique effective when applied to measurement of thermal resistance of a power module.
- Power semiconductor elements such as power MOSFETs (Metal-Oxide-Semiconductor-Field-Effect-Transistors) and IGBTs (Insulated Gate-Bipolar-Transistors) built in power converters generate a large amount of heat and are designed to maintain the operating temperature below the rated value. In this case, the thermal resistance is measured in order to grasp the heat dissipation capability.
- MOSFETs Metal-Oxide-Semiconductor-Field-Effect-Transistors
- IGBTs Insulated Gate-Bipolar-Transistors
- the thermal resistance is determined by the thermal conductivity and shape of the material on the heat dissipation path, and the thermal resistance increases when the heat dissipation path deteriorates. For example, when the power semiconductor element is repeatedly turned on / off, the power semiconductor element and the solder bonded to the power semiconductor element are repeatedly expanded and contracted. At this time, since the thermal expansion coefficients of the power semiconductor element and the solder are different, stress / strain is generated at the joint surface, and eventually a crack is generated at the joint surface to increase the thermal resistance.
- the thermal resistance is related to the degradation of the power semiconductor element, and the degree of degradation of the power semiconductor element can be grasped by measuring the thermal resistance.
- FIG. 1 is a circuit diagram for explaining the ⁇ VGS method, which is a conventional method for measuring the thermal resistance of a power MOSFET. This conventional method measures the thermal resistance by utilizing the fact that the MOSFET gate voltage value changes linearly according to the device junction temperature.
- the ⁇ VGS method in order to measure the element temperature before heating the element, the ⁇ VGS method first flows a small current from the current source 1a to the semiconductor element 2 to the extent that the semiconductor element 2 does not generate heat. Measure the element temperature.
- the current value flowing between the drain and source terminals (between DS) of the semiconductor element 2 when measuring the element temperature before heating is, for example, a current value of about 1/1000 of the rated value.
- the temperature characteristic data of the gate voltage is acquired in advance, and the element temperature is obtained by converting from the gate voltage using the acquired data.
- a current having a larger value than the current for measuring element temperature before heating is supplied from the current source 1b to the semiconductor element 2 for element heating.
- the gate voltage value is decreased to increase the drain-source terminal voltage (DS voltage).
- DS voltage drain-source terminal voltage
- the thermal resistance value of the power semiconductor element can be obtained by dividing the amount of change in element temperature before and after heating by the value of heating power.
- Patent Document 1 As a background art in this technical field, there is a technique such as Patent Document 1.
- Patent Document 1 “at least one of a step of measuring a temperature coefficient of a forward gate-source voltage of a semiconductor element and a step of obtaining a difference between forward gate-source voltages before and after applying a drain voltage, A “thermal resistance measuring method including a temperature raising step of a semiconductor element” is disclosed.
- FIG. 2 is a diagram for explaining the transfer characteristics of the MOSFET.
- the two graphs in FIG. 2 show the transfer characteristics when the element temperature Tj is room temperature and high temperature.
- the gate voltage Vgs1 crosses the room temperature and high temperature transfer characteristics, and when the gate voltage is greater than Vgs1 (temperature coefficient positive region), the amount of current flowing through the element is suppressed as the element temperature increases. When the gate voltage is smaller than Vgs1 (temperature coefficient negative region), the amount of current flowing through the element increases as the element temperature increases.
- the above-mentioned patent document 1 is a method for measuring thermal resistance using temperature characteristics of a semiconductor element, but is a method for measuring the thermal resistance of a single semiconductor element, in a power module having a plurality of semiconductor elements as described above. There is no mention of problems caused by variations in the heat generated between the elements and solutions for the problems.
- the present invention has been made in view of the above points, and its object is to provide a thermal resistance measuring method for accurately measuring the thermal resistance of a power module incorporating a plurality of semiconductor elements and a function for accurately measuring the thermal resistance. It is providing the power converter device provided with.
- the present invention provides a power conversion device including a power module, a thermal resistance measurement unit that measures a thermal resistance of the power module, and a control unit that controls a gate voltage of the power module.
- the power module includes a plurality of semiconductor elements connected in parallel with each other with a source and a drain as a common node, and the control unit applies a predetermined pulse voltage between the drain and source of the plurality of semiconductor elements. Applying electric power for heating each of the plurality of semiconductor elements by applying to the plurality of semiconductor elements, and measuring the gate-source voltages of the plurality of semiconductor elements based on the results obtained Controlling the operation of the thermal resistance measuring unit.
- the present invention also relates to a method for measuring thermal resistance of a power module having a plurality of semiconductor elements connected in parallel with each other using a source and a drain as a common node, wherein a predetermined pulse is applied between the drain and source of the plurality of semiconductor elements. Based on a result obtained by applying electric power for heating each of the plurality of semiconductor elements by applying a voltage to the plurality of semiconductor elements and measuring a gate-source voltage of the plurality of semiconductor elements. And determining whether thermal resistance measurement is possible.
- a thermal resistance measuring method for accurately measuring thermal resistance by reducing the variation in heat generation between elements of a power module incorporating a plurality of semiconductor elements, and a power converter having a function for accurately measuring thermal resistance can be provided.
- FIG. 3 is a measurement circuit diagram in the thermal resistance measurement method according to the first embodiment. It is a figure for demonstrating the temperature characteristic of the transfer characteristic of MOSFET. It is a figure which shows schematic structure of the power converter device which concerns on one Embodiment of this invention. It is a flowchart which shows the thermal resistance measuring method which concerns on one Embodiment of this invention.
- FIG. 3 shows a schematic configuration of a power conversion device using the thermal resistance measurement method in the first embodiment.
- the power conversion device 5 of this embodiment includes a power module 7 including a plurality of MOSFETs 6 (1, 2,..., N), and a thermal resistance measurement unit that measures the thermal resistance of the power module 7. 8 and a control unit 9 for controlling the gate voltage of the power module 7.
- FIG. 4 shows a thermal resistance measurement circuit of the thermal resistance measurement unit 8.
- the thermal resistance measurement circuit of FIG. 4 includes a terminal D for connecting to the drain terminal of the power module 2, a terminal S for connecting to the source terminal, a terminal G for connecting to the gate terminal, and the element temperature before and after element heating.
- the comparator 4 is configured.
- control unit 9 for controlling the energization condition to the gate terminal is provided.
- the control unit 9 is connected to the thermal resistance measurement unit 8, and transmits an instruction to start and stop measurement of thermal resistance of the power module 2 to the thermal resistance measurement unit 8.
- the thermal resistance measurement method in the present embodiment will be described with reference to FIGS. First, current is supplied from the current source 1a to the extent that the semiconductor element (power module) 2 does not generate heat between the drain and source terminals before element heating, and the element temperature before heating is measured from the voltage between the gate and source terminals at this time. To do.
- a current having a larger value than the current for measuring element temperature before heating is supplied from the current source 1b to the semiconductor element (power module) 2 for element heating.
- the drain-source terminal voltage of the power module 2 is detected and input to the control unit 9, and the control unit 9 applies a pulse voltage to the gate of the power module 2 so that the drain-source terminal voltage becomes a predetermined value.
- the thermal resistance In order to measure the thermal resistance, it is necessary to heat the element. If the heat generation of the element is small, the measurement accuracy of the thermal resistance is deteriorated. In order to increase the element heat generation, it is preferable to set the drain-source voltage large, but at this time the gate voltage decreases. If the gate voltage becomes too small, the transfer characteristic of the power module 2 becomes a temperature coefficient negative region, and when the element is heated, the heat generation between elements of the plurality of MOSFETs 6 built in the power module 2 varies, and the thermal resistance cannot be measured accurately. .
- the change in the gate voltage during element heating is measured so that the thermal resistance can be measured under the condition that the variation in heat generation between elements does not occur.
- the gate voltage decreases as the element temperature increases during heating.
- the control unit 9 samples the gate voltage at the time of heating the element, and when the change in the gate voltage during heating decreases, issues a stop instruction to the thermal resistance measurement unit 8 and disconnects the thermal resistance measurement circuit from the power module 2. To do.
- the drain-source current / voltage value of the power module 2 is reset and the thermal resistance measurement is started again.
- the current source is A current is passed from 1a to the element to measure the element temperature after heating.
- the thermal resistance is calculated by dividing the amount of change in element temperature before and after element heating by the heating power (p).
- energization conditions Vds, Ids
- a drain-source voltage (Vds) and a drain-source current (Ids) for heating the element (chip) are applied to the element (sample).
- the gate voltage (Vgs) during energization is measured.
- a slope (dVgs / dt) is calculated from the gate voltage (Vgs) measured in step S3.
- Step S4 Subsequently, whether the slope (dVgs / dt) calculated in step S4 is positive or negative is determined.
- Step S6 Subsequently, by dividing the element temperature change amount before and after the element heating by the heating power (p), that is, by calculating the value of ( ⁇ Tj ⁇ Tc) / p, the thermal resistance Rj ⁇ c of the element (sample) is calculated. Is calculated. (Step S7) With the above method, it is possible to accurately measure the thermal resistance of a power conversion device having a power module incorporating a plurality of MOSFETs without causing variations in heat generation between elements.
- FIG. 6 shows a schematic configuration of a power conversion device using the thermal resistance measurement method in the second embodiment.
- the power conversion device of FIG. 6 is an embodiment in which a three-phase AC type power module in which semiconductor elements are respectively arranged on the upper and lower arms of the U phase, V phase, and W phase is mounted.
- the power conversion apparatus 5 of the present embodiment includes power modules 2a to 2f incorporating a plurality of MOSFETs, a thermal resistance measuring unit 8 that measures the thermal resistance of the power module, and a gate voltage of the power module.
- a control unit 9 for controlling the voltage a voltmeter 10 for detecting the voltage between the drain and source terminals of the MOSFET, a voltmeter 11 for detecting the voltage between the gate and source terminals of the MOSFET, and measuring the current between the drain and source terminals of the MOSFET It comprises a current sensor 12, a power source 13, and a motor 14.
- the controller 9 applies a voltage to the gate so that the power module 2a and the power module 2d are on and the other power modules are off. At this time, the current is supplied in the order of the power source 13, the power module 2a, the motor 14, the power module 2d, and the power source 13.
- the voltmeter 10 is provided between the drain and source terminals, and a current sensor 12 is provided between the power module 2a and the power module 2d, which is a path through which the drain-source current of the power module 2a flows.
- the drain-source current of the power module 2a detected by the current sensor 12 is input to the control unit 9 so that a constant drain-source current flows through the power module 2a during the thermal resistance measurement.
- a voltage that periodically repeats on / off is applied from the control unit 9 to the gate of the power module 2d so that the current is always constant.
- the control unit 9 controls the value of the current flowing through the power module 2a by changing the ON / OFF cycle of the gate voltage pulse of the power module 2d.
- the gate voltage of the power module 2a is turned off, the high voltage of the power source 13 is applied between the drain and source terminals, so that the voltmeters 10 and 11 are powered simultaneously with turning off the gate voltage of the power module 2a.
- the control unit 9 controls the module 2a so as to be disconnected from the drain terminal and the source terminal.
- a current of about 1/1000 of the rated current flows through the power module 2a.
- a current for heating is passed through the power module 2a for about several seconds.
- the gate voltage of the power module 2a is sampled.
- the control unit 9 turns off the power module 2d and stops measuring the thermal resistance so that no current flows between the drain and source terminals of the power module 2a. To do.
- the drain-source current value of the power module 2a is changed to sample the change in the gate voltage during heating again. If the gate voltage is constant or increased during the heating, the current for measuring the element temperature after heating is changed.
- the element temperature is calculated from the gate voltage of the power module at this time. The thermal resistance is obtained by dividing the amount of change in element temperature before and after heating by the heating power value (p).
- this invention is not limited to the above-mentioned Example, Various modifications are included.
- the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.
- a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
- SYMBOLS 1a, 1b ... Current source, 2, 2a-2f ... Semiconductor element (power module), 3 ... Voltage source, 4 ... Comparator, 5 ... Power converter, 6 ... MOSFET, 7 ... Power module, 8 ... Thermal resistance measurement Part, 9 ... control part, 10, 11 ... voltmeter, 12 ... current sensor, 13 ... power supply, 14 ... motor.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
Provided is a thermal resistance measurement method for accurately measuring a thermal resistance by reducing the variation in inter-element heat generation of a power module embedding a plurality of semiconductor elements and also provided is a power conversion device equipped with a function for accurately measuring the thermal resistance. The power conversion device is provided with a power module, a thermal resistance measurement unit for measuring the thermal resistance of the power module, and a control unit for controlling the gate voltage of the power module and is characterized in that: the power module has a plurality of semiconductor elements, the sources and drains of which are connected in parallel with each other as common nodes; and the control unit applies a predetermined pulse voltage between the drains and the sources of the semiconductor elements, thereby applying power for heating each of the semiconductor elements to the semiconductor elements and controlling the operation of the thermal resistance measurement unit on the basis of the results obtained by measuring the gate-source voltages of the semiconductor elements.
Description
本発明は、複数の半導体素子を内蔵したパワーモジュールを有する電力変換装置に係り、特に、パワーモジュールの熱抵抗計測に適用して有効な技術に関する。
The present invention relates to a power conversion device having a power module incorporating a plurality of semiconductor elements, and more particularly to a technique effective when applied to measurement of thermal resistance of a power module.
電力変換装置内に内蔵されるパワーMOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)やIGBT(Insulated Gate Bipolar Transistor)といったパワー半導体素子は発熱量が多く、動作温度を定格以下に維持するため熱設計の最適化が厳しくなされており、このとき放熱性能力を把握するために熱抵抗が計測される。
Power semiconductor elements such as power MOSFETs (Metal-Oxide-Semiconductor-Field-Effect-Transistors) and IGBTs (Insulated Gate-Bipolar-Transistors) built in power converters generate a large amount of heat and are designed to maintain the operating temperature below the rated value. In this case, the thermal resistance is measured in order to grasp the heat dissipation capability.
熱抵抗は放熱経路上の材料の熱伝導性や形状により決定され、放熱経路に劣化が生じるとその熱抵抗は増大する。例えば、パワー半導体素子のオン/オフが繰り返されるとパワー半導体素子およびパワー半導体素子と接合される半田は熱膨張・収縮が繰り返される。その際にパワー半導体素子と半田の熱膨張率が異なるため、接合面で応力・ひずみが生じ、やがて接合面でき裂が発生して熱抵抗が増大する。
The thermal resistance is determined by the thermal conductivity and shape of the material on the heat dissipation path, and the thermal resistance increases when the heat dissipation path deteriorates. For example, when the power semiconductor element is repeatedly turned on / off, the power semiconductor element and the solder bonded to the power semiconductor element are repeatedly expanded and contracted. At this time, since the thermal expansion coefficients of the power semiconductor element and the solder are different, stress / strain is generated at the joint surface, and eventually a crack is generated at the joint surface to increase the thermal resistance.
また、劣化が進展して熱抵抗が増大していくと、パワー半導体素子の動作温度が定格以上となり素子破壊につながる。このように熱抵抗はパワー半導体素子の劣化と関連しており、熱抵抗を計測することで、パワー半導体素子の劣化の程度を把握することができる。
Also, as the deterioration progresses and the thermal resistance increases, the operating temperature of the power semiconductor element exceeds the rating, leading to element destruction. Thus, the thermal resistance is related to the degradation of the power semiconductor element, and the degree of degradation of the power semiconductor element can be grasped by measuring the thermal resistance.
図1は従来のパワーMOSFETの熱抵抗計測方法であるΔVGS法を説明するための回路図である。この従来方法は、MOSFETのゲート電圧値が素子接合温度に応じて線形に変化することを利用して熱抵抗を測定するものである。図1においてΔVGS法は、まず素子加熱前の素子温度を測定するために、電流源1aから半導体素子2へ半導体素子2が発熱しない程度に小さな電流を流し、このときのゲート電圧値から加熱前の素子温度を測定する。
FIG. 1 is a circuit diagram for explaining the ΔVGS method, which is a conventional method for measuring the thermal resistance of a power MOSFET. This conventional method measures the thermal resistance by utilizing the fact that the MOSFET gate voltage value changes linearly according to the device junction temperature. In FIG. 1, in order to measure the element temperature before heating the element, the ΔVGS method first flows a small current from the current source 1a to the semiconductor element 2 to the extent that the semiconductor element 2 does not generate heat. Measure the element temperature.
加熱前素子温度を測定するときの半導体素子2のドレイン-ソース端子間(D-S間)に流す電流値は、例えば定格の1/1000程度の電流値が選択される。ゲート電圧の温度特性データは予め取得しておき、素子温度は取得済データを用いてゲート電圧から換算して求める。加熱前素子温度を計測した後、素子加熱のために、加熱前素子温度測定用の電流と比較して値の大きな電流を、電流源1bから半導体素子2に流す。このとき、ゲート電圧値を小さくして、ドレイン-ソース端子間電圧(D-S間電圧)を大きくするようにする。ドレイン-ソース端子間電圧を大きくすることで、素子に加える電力の値(ドレイン-ソース端子間の電流と電圧との積)が大きくなり熱抵抗を計測するために充分な加熱を半導体素子2に与えることができる。
The current value flowing between the drain and source terminals (between DS) of the semiconductor element 2 when measuring the element temperature before heating is, for example, a current value of about 1/1000 of the rated value. The temperature characteristic data of the gate voltage is acquired in advance, and the element temperature is obtained by converting from the gate voltage using the acquired data. After measuring the element temperature before heating, a current having a larger value than the current for measuring element temperature before heating is supplied from the current source 1b to the semiconductor element 2 for element heating. At this time, the gate voltage value is decreased to increase the drain-source terminal voltage (DS voltage). By increasing the voltage between the drain and source terminals, the value of power applied to the element (the product of the current and voltage between the drain and source terminals) is increased, and sufficient heating is applied to the semiconductor element 2 to measure the thermal resistance. Can be given.
加熱後は、再び素子温度測定のために電流源1bからソース-ドレイン端子間へ電流を流す。パワー半導体素子の熱抵抗値は、加熱前後の素子温度の変化量を、加熱電力の値で除することにより求めることができる。
After heating, a current is passed again from the current source 1b between the source and drain terminals to measure the element temperature. The thermal resistance value of the power semiconductor element can be obtained by dividing the amount of change in element temperature before and after heating by the value of heating power.
本技術分野の背景技術として、特許文献1のような技術がある。特許文献1には、「半導体素子の順方向ゲートソース間電圧の温度係数を測定する工程とドレイン電圧印加前後の順方向ゲートソース間電圧の差分を求める工程の少なくとも一方の工程の前に、該半導体素子の昇温工程を有する熱抵抗測定方法」が開示されている。
As a background art in this technical field, there is a technique such as Patent Document 1. In Patent Document 1, “at least one of a step of measuring a temperature coefficient of a forward gate-source voltage of a semiconductor element and a step of obtaining a difference between forward gate-source voltages before and after applying a drain voltage, A “thermal resistance measuring method including a temperature raising step of a semiconductor element” is disclosed.
上述したように従来のMOSFETの熱抵抗計測方法では、素子を加熱するときにゲート電圧を小さくする。図2はMOSFETの伝達特性を説明するための図である。図2中の2つのグラフは素子温度Tjが室温、高温ときの各々の伝達特性を示している。
As described above, in the conventional MOSFET thermal resistance measurement method, the gate voltage is reduced when the element is heated. FIG. 2 is a diagram for explaining the transfer characteristics of the MOSFET. The two graphs in FIG. 2 show the transfer characteristics when the element temperature Tj is room temperature and high temperature.
図2に示すようにゲート電圧Vgs1で室温と高温の伝達特性はクロスし、ゲート電圧がVgs1より大きい場合(温度係数正領域)には素子温度が高くなるほど素子に流れる電流量は抑制され、一方、ゲート電圧がVgs1より小さくなる場合(温度係数負領域)では、素子温度が高くなるほど素子に流れる電流量は多くなる。
As shown in FIG. 2, the gate voltage Vgs1 crosses the room temperature and high temperature transfer characteristics, and when the gate voltage is greater than Vgs1 (temperature coefficient positive region), the amount of current flowing through the element is suppressed as the element temperature increases. When the gate voltage is smaller than Vgs1 (temperature coefficient negative region), the amount of current flowing through the element increases as the element temperature increases.
熱抵抗計測における素子加熱時に、ゲート電圧がVgs1より大きい場合には、電流が多く流れる素子ほど素子温度が高くなり、素子温度が高くなるとさらに電流がその素子に多く流れるといった正帰還が起こる。正帰還が起きると、複数のMOSFETが内蔵されたパワーモジュールの熱抵抗を計測する場合に、特定の素子に電流が集中して各素子間で発熱バラつきが生じてしまい、熱抵抗を精度良く計測できないといった問題が生じてしまう。
When the gate voltage is higher than Vgs1 when the element is heated in the thermal resistance measurement, the element temperature increases as the element flows with a large amount of current, and when the element temperature increases, a positive feedback occurs such that a larger amount of current flows through the element. When positive feedback occurs, when measuring the thermal resistance of a power module with multiple MOSFETs, current concentrates on a specific element, causing variations in heat generation between elements, and accurately measuring the thermal resistance. The problem of being unable to occur.
上記特許文献1は、半導体素子の温度特性を利用して熱抵抗測定を行うものであるが、半導体素子単体の熱抵抗測定方法であり、上記のような複数の半導体素子を有するパワーモジュールでの各素子間の発熱バラつきによる課題やその解決方法については述べられていない。
The above-mentioned patent document 1 is a method for measuring thermal resistance using temperature characteristics of a semiconductor element, but is a method for measuring the thermal resistance of a single semiconductor element, in a power module having a plurality of semiconductor elements as described above. There is no mention of problems caused by variations in the heat generated between the elements and solutions for the problems.
本発明は上述の点に鑑みなされたもので、その目的とするところは、複数の半導体素子を内蔵したパワーモジュールの熱抵抗を精度良く計測する熱抵抗計測方法および熱抵抗を精度良く計測する機能を備えた電力変換装置を提供することにある。
The present invention has been made in view of the above points, and its object is to provide a thermal resistance measuring method for accurately measuring the thermal resistance of a power module incorporating a plurality of semiconductor elements and a function for accurately measuring the thermal resistance. It is providing the power converter device provided with.
上記課題を解決するために、本発明は、パワーモジュールと、前記パワーモジュールの熱抵抗を計測する熱抵抗計測部と、前記パワーモジュールのゲート電圧を制御する制御部と、を備える電力変換装置であって、前記パワーモジュールは、ソースおよびドレインを共通ノードとして互いに並列に接続された複数の半導体素子を有し、前記制御部は、前記複数の半導体素子のドレイン-ソース間に所定のパルス電圧を印加することにより前記複数の半導体素子の各々を加熱するための電力を当該複数の半導体素子に印加し、前記複数の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて前記熱抵抗計測部の動作を制御することを特徴とする。
In order to solve the above-described problems, the present invention provides a power conversion device including a power module, a thermal resistance measurement unit that measures a thermal resistance of the power module, and a control unit that controls a gate voltage of the power module. The power module includes a plurality of semiconductor elements connected in parallel with each other with a source and a drain as a common node, and the control unit applies a predetermined pulse voltage between the drain and source of the plurality of semiconductor elements. Applying electric power for heating each of the plurality of semiconductor elements by applying to the plurality of semiconductor elements, and measuring the gate-source voltages of the plurality of semiconductor elements based on the results obtained Controlling the operation of the thermal resistance measuring unit.
また、本発明は、ソースおよびドレインを共通ノードとして互いに並列に接続された複数の半導体素子を有するパワーモジュールの熱抵抗計測方法であって、前記複数の半導体素子のドレイン-ソース間に所定のパルス電圧を印加することにより前記複数の半導体素子の各々を加熱するための電力を当該複数の半導体素子に印加し、前記複数の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて熱抵抗計測の可否を判定することを特徴とする。
The present invention also relates to a method for measuring thermal resistance of a power module having a plurality of semiconductor elements connected in parallel with each other using a source and a drain as a common node, wherein a predetermined pulse is applied between the drain and source of the plurality of semiconductor elements. Based on a result obtained by applying electric power for heating each of the plurality of semiconductor elements by applying a voltage to the plurality of semiconductor elements and measuring a gate-source voltage of the plurality of semiconductor elements. And determining whether thermal resistance measurement is possible.
本発明によれば、複数の半導体素子を内蔵したパワーモジュールの素子間発熱バラつきを低減して精度良く熱抵抗を計測する熱抵抗計測方法および熱抵抗を精度良く計測する機能を備えた電力変換装置を提供することができる。
Advantageous Effects of Invention According to the present invention, a thermal resistance measuring method for accurately measuring thermal resistance by reducing the variation in heat generation between elements of a power module incorporating a plurality of semiconductor elements, and a power converter having a function for accurately measuring thermal resistance Can be provided.
上記した以外の課題、構成及び効果は、以下の実施形態の説明により明らかにされる。
Issues, configurations, and effects other than those described above will be clarified by the following description of the embodiments.
以下、図面を用いて本発明の熱抵抗計測方法と熱抵抗計測機能を有する電力変換装置を説明する。なお、各図面において、同一の構成については同一の符号を付し、重複する部分についてはその詳細な説明は省略する。
Hereinafter, the thermal resistance measuring method and the power converter having the thermal resistance measuring function of the present invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and detailed description of the overlapping portions is omitted.
図3に実施例1における熱抵抗計測方法を用いた電力変換装置の概略構成を示す。図3に示すように、本実施例の電力変換装置5は、複数のMOSFET6(1,2,…,n)を内蔵するパワーモジュール7と、パワーモジュール7の熱抵抗を計測する熱抵抗計測部8、パワーモジュール7のゲート電圧を制御する制御部9とから構成されている。
FIG. 3 shows a schematic configuration of a power conversion device using the thermal resistance measurement method in the first embodiment. As shown in FIG. 3, the power conversion device 5 of this embodiment includes a power module 7 including a plurality of MOSFETs 6 (1, 2,..., N), and a thermal resistance measurement unit that measures the thermal resistance of the power module 7. 8 and a control unit 9 for controlling the gate voltage of the power module 7.
図4に熱抵抗計測部8の熱抵抗計測回路を示す。図4の熱抵抗計測回路は、パワーモジュール2のドレイン端子と接続するための端子D、ソース端子と接続するための端子S、ゲート端子と接続するための端子G、素子加熱前後の素子温度を測定するために用いる電流源1a、素子加熱用の電流源1b、パワーモジュール2のゲート電圧を検出するための電圧計V、パワーモジュール2のドレイン-ソース間に電圧を印加するための電圧源3、比較器4から構成されている。
FIG. 4 shows a thermal resistance measurement circuit of the thermal resistance measurement unit 8. The thermal resistance measurement circuit of FIG. 4 includes a terminal D for connecting to the drain terminal of the power module 2, a terminal S for connecting to the source terminal, a terminal G for connecting to the gate terminal, and the element temperature before and after element heating. A current source 1a used for measurement, a current source 1b for element heating, a voltmeter V for detecting the gate voltage of the power module 2, and a voltage source 3 for applying a voltage between the drain and source of the power module 2 The comparator 4 is configured.
また、比較器4と端子Gの間には、ゲート端子への通電条件を制御する制御部9が設けられている。制御部9は熱抵抗計測部8に接続されており、パワーモジュール2の熱抵抗の計測開始と計測停止の指示を熱抵抗計測部8へ伝送する。
Also, between the comparator 4 and the terminal G, a control unit 9 for controlling the energization condition to the gate terminal is provided. The control unit 9 is connected to the thermal resistance measurement unit 8, and transmits an instruction to start and stop measurement of thermal resistance of the power module 2 to the thermal resistance measurement unit 8.
図3および図4を用いて、本実施例における熱抵抗計測方法について説明する。先ず、素子加熱前のドレイン-ソース端子間に半導体素子(パワーモジュール)2が発熱しない程度に電流源1aから電流を通電させて、このときのゲート-ソース端子間電圧から加熱前素子温度を測定する。
The thermal resistance measurement method in the present embodiment will be described with reference to FIGS. First, current is supplied from the current source 1a to the extent that the semiconductor element (power module) 2 does not generate heat between the drain and source terminals before element heating, and the element temperature before heating is measured from the voltage between the gate and source terminals at this time. To do.
加熱前素子温度を計測した後、素子加熱のために、加熱前素子温度測定用の電流と比較して値の大きな電流を電流源1bから半導体素子(パワーモジュール)2に流す。このとき、パワーモジュール2のドレイン-ソース端子間電圧を検出して制御部9に入力し、制御部9はドレイン-ソース端子間電圧が所定の値となるようにパワーモジュール2のゲートへパルス電圧を印加する。
After measuring the element temperature before heating, a current having a larger value than the current for measuring element temperature before heating is supplied from the current source 1b to the semiconductor element (power module) 2 for element heating. At this time, the drain-source terminal voltage of the power module 2 is detected and input to the control unit 9, and the control unit 9 applies a pulse voltage to the gate of the power module 2 so that the drain-source terminal voltage becomes a predetermined value. Apply.
熱抵抗を計測するためには素子を発熱させる必要があり、素子の発熱が小さいと熱抵抗の計測精度は悪くなる。素子発熱を大きくするためには、ドレイン-ソース電圧を大きく設定すると良いが、このときゲート電圧は小さくなる。ゲート電圧が小さくなり過ぎると、パワーモジュール2の伝達特性は温度係数負領域となり、素子加熱時に、パワーモジュール2に内蔵する複数のMOSFET6の素子間発熱バラつきが生じ、熱抵抗を精度良く計測できなくなる。
In order to measure the thermal resistance, it is necessary to heat the element. If the heat generation of the element is small, the measurement accuracy of the thermal resistance is deteriorated. In order to increase the element heat generation, it is preferable to set the drain-source voltage large, but at this time the gate voltage decreases. If the gate voltage becomes too small, the transfer characteristic of the power module 2 becomes a temperature coefficient negative region, and when the element is heated, the heat generation between elements of the plurality of MOSFETs 6 built in the power module 2 varies, and the thermal resistance cannot be measured accurately. .
つまり、パワーモジュール2の熱抵抗を精度良く計測するためにはゲート電圧を小さくする必要があるが、ゲート電圧を小さくし過ぎると素子間発熱バラつきが生じ熱抵抗を精度よく計測することができない。
That is, in order to accurately measure the thermal resistance of the power module 2, it is necessary to reduce the gate voltage. However, if the gate voltage is too small, variation in heat generation between elements occurs and the thermal resistance cannot be accurately measured.
そこで、本実施例においては、素子間発熱バラつきが生じない条件で熱抵抗を計測できるよう素子加熱中のゲート電圧の変化を測定する。図5の伝達特性に示すように、素子間発熱バラつきが生じる条件で熱抵抗を計測している場合には、加熱中に素子温度が高くなるにつれてゲート電圧が減少していく。制御部9は素子加熱時のゲート電圧をサンプリングし、加熱中のゲート電圧変化が減少する場合には、熱抵抗計測部8へ停止指示を出し、熱抵抗計測回路をパワーモジュール2から切り離すようにする。
Therefore, in this embodiment, the change in the gate voltage during element heating is measured so that the thermal resistance can be measured under the condition that the variation in heat generation between elements does not occur. As shown in the transfer characteristics of FIG. 5, in the case where the thermal resistance is measured under a condition that causes variation in heat generation between elements, the gate voltage decreases as the element temperature increases during heating. The control unit 9 samples the gate voltage at the time of heating the element, and when the change in the gate voltage during heating decreases, issues a stop instruction to the thermal resistance measurement unit 8 and disconnects the thermal resistance measurement circuit from the power module 2. To do.
そして、パワーモジュール2のドレイン-ソース電流・電圧値を設定し直し、再度熱抵抗計測を開始し、素子加熱中のゲート電圧の変化が一定もしくは増加する場合には、素子加熱終了後に、電流源1aから素子へ電流を流して加熱後素子温度を測定する。熱抵抗は素子加熱前後の素子温度変化量を加熱電力(p)で除することで算出される。
Then, the drain-source current / voltage value of the power module 2 is reset and the thermal resistance measurement is started again. When the change in the gate voltage during element heating is constant or increased, the current source is A current is passed from 1a to the element to measure the element temperature after heating. The thermal resistance is calculated by dividing the amount of change in element temperature before and after element heating by the heating power (p).
上記の熱抵抗計測方法を図7のフローチャートに示す。先ず、通電条件(Vds,Ids)を設定する。(ステップS1)
続いて、素子(チップ)加熱のためのドレイン-ソース電圧(Vds)およびドレイン-ソース電流(Ids)を素子(サンプル)へ印加する。(ステップS2)
続いて、通電中のゲート電圧(Vgs)を測定する。(ステップS3)
ステップS3で計測したゲート電圧(Vgs)から傾き(dVgs/dt)を算出する。(ステップS4)
続いて、ステップS4で算出した傾き(dVgs/dt)の正負を判定する。傾き(dVgs/dt)が負の場合、すなわちdVgs/dt<0の場合は、ゲート-ソース間電圧が減少していることになるため、測定を停止し、ステップS1へ戻り、通電条件(Vds,Ids)を設定し直す。 The above thermal resistance measurement method is shown in the flowchart of FIG. First, energization conditions (Vds, Ids) are set. (Step S1)
Subsequently, a drain-source voltage (Vds) and a drain-source current (Ids) for heating the element (chip) are applied to the element (sample). (Step S2)
Subsequently, the gate voltage (Vgs) during energization is measured. (Step S3)
A slope (dVgs / dt) is calculated from the gate voltage (Vgs) measured in step S3. (Step S4)
Subsequently, whether the slope (dVgs / dt) calculated in step S4 is positive or negative is determined. When the slope (dVgs / dt) is negative, that is, when dVgs / dt <0, the voltage between the gate and the source is decreased. Therefore, the measurement is stopped, the process returns to step S1, and the energization condition (Vds , Ids).
続いて、素子(チップ)加熱のためのドレイン-ソース電圧(Vds)およびドレイン-ソース電流(Ids)を素子(サンプル)へ印加する。(ステップS2)
続いて、通電中のゲート電圧(Vgs)を測定する。(ステップS3)
ステップS3で計測したゲート電圧(Vgs)から傾き(dVgs/dt)を算出する。(ステップS4)
続いて、ステップS4で算出した傾き(dVgs/dt)の正負を判定する。傾き(dVgs/dt)が負の場合、すなわちdVgs/dt<0の場合は、ゲート-ソース間電圧が減少していることになるため、測定を停止し、ステップS1へ戻り、通電条件(Vds,Ids)を設定し直す。 The above thermal resistance measurement method is shown in the flowchart of FIG. First, energization conditions (Vds, Ids) are set. (Step S1)
Subsequently, a drain-source voltage (Vds) and a drain-source current (Ids) for heating the element (chip) are applied to the element (sample). (Step S2)
Subsequently, the gate voltage (Vgs) during energization is measured. (Step S3)
A slope (dVgs / dt) is calculated from the gate voltage (Vgs) measured in step S3. (Step S4)
Subsequently, whether the slope (dVgs / dt) calculated in step S4 is positive or negative is determined. When the slope (dVgs / dt) is negative, that is, when dVgs / dt <0, the voltage between the gate and the source is decreased. Therefore, the measurement is stopped, the process returns to step S1, and the energization condition (Vds , Ids).
一方、傾き(dVgs/dt)が正の場合、すなわちdVgs/dt≧0の場合は、ゲート-ソース間電圧が一定もしくは増加していることになるため、ステップ6へ移行し、素子(サンプル)への通電を継続する。(ステップS6)
続いて、素子加熱前後の素子温度変化量を加熱電力(p)で除すことにより、すなわち、(ΔTj-ΔTc)/pの値を算出することにより、素子(サンプル)の熱抵抗Rj-cを算出する。(ステップS7)
以上の方法により、複数のMOSFETが内蔵されたパワーモジュールを有する電力変換装置について、素子間発熱バラつきを生じさせずに熱抵抗を精度良く計測することができる。 On the other hand, when the slope (dVgs / dt) is positive, that is, when dVgs / dt ≧ 0, the gate-source voltage is constant or increased. Continue energizing the. (Step S6)
Subsequently, by dividing the element temperature change amount before and after the element heating by the heating power (p), that is, by calculating the value of (ΔTj−ΔTc) / p, the thermal resistance Rj−c of the element (sample) is calculated. Is calculated. (Step S7)
With the above method, it is possible to accurately measure the thermal resistance of a power conversion device having a power module incorporating a plurality of MOSFETs without causing variations in heat generation between elements.
続いて、素子加熱前後の素子温度変化量を加熱電力(p)で除すことにより、すなわち、(ΔTj-ΔTc)/pの値を算出することにより、素子(サンプル)の熱抵抗Rj-cを算出する。(ステップS7)
以上の方法により、複数のMOSFETが内蔵されたパワーモジュールを有する電力変換装置について、素子間発熱バラつきを生じさせずに熱抵抗を精度良く計測することができる。 On the other hand, when the slope (dVgs / dt) is positive, that is, when dVgs / dt ≧ 0, the gate-source voltage is constant or increased. Continue energizing the. (Step S6)
Subsequently, by dividing the element temperature change amount before and after the element heating by the heating power (p), that is, by calculating the value of (ΔTj−ΔTc) / p, the thermal resistance Rj−c of the element (sample) is calculated. Is calculated. (Step S7)
With the above method, it is possible to accurately measure the thermal resistance of a power conversion device having a power module incorporating a plurality of MOSFETs without causing variations in heat generation between elements.
図6に実施例2における熱抵抗計測方法を用いた電力変換装置の概略構成を示す。図6の電力変換装置は、U相、V相、W相の上下アームに各々半導体素子を配置した三相交流型のパワーモジュールを搭載する実施例である。
FIG. 6 shows a schematic configuration of a power conversion device using the thermal resistance measurement method in the second embodiment. The power conversion device of FIG. 6 is an embodiment in which a three-phase AC type power module in which semiconductor elements are respectively arranged on the upper and lower arms of the U phase, V phase, and W phase is mounted.
図6に示すように、本実施例の電力変換装置5は、複数のMOSFETを内蔵するパワーモジュール2a~2fと、パワーモジュールの熱抵抗を計測する熱抵抗計測部8と、パワーモジュールのゲート電圧を制御する制御部9と、MOSFETのドレイン-ソース端子間電圧を検出する電圧計10、MOSFETのゲート-ソース端子間電圧を検出するための電圧計11、MOSFETのドレイン-ソース端子間電流を計測するための電流センサ12、電源13、モータ14とから構成されている。
As shown in FIG. 6, the power conversion apparatus 5 of the present embodiment includes power modules 2a to 2f incorporating a plurality of MOSFETs, a thermal resistance measuring unit 8 that measures the thermal resistance of the power module, and a gate voltage of the power module. A control unit 9 for controlling the voltage, a voltmeter 10 for detecting the voltage between the drain and source terminals of the MOSFET, a voltmeter 11 for detecting the voltage between the gate and source terminals of the MOSFET, and measuring the current between the drain and source terminals of the MOSFET It comprises a current sensor 12, a power source 13, and a motor 14.
ここでは、パワーモジュール2aの熱抵抗を計測する方法を説明する。制御部9はパワーモジュール2aとパワーモジュール2dがオン、その他のパワーモジュールはオフとなるようにゲートに電圧を印加する。このとき、電流は電源13、パワーモジュール2a、モータ14、パワーモジュール2d、電源13の順に通電する。
Here, a method for measuring the thermal resistance of the power module 2a will be described. The controller 9 applies a voltage to the gate so that the power module 2a and the power module 2d are on and the other power modules are off. At this time, the current is supplied in the order of the power source 13, the power module 2a, the motor 14, the power module 2d, and the power source 13.
パワーモジュール2aの熱抵抗を算出するにはドレイン-ソース端子間の電圧値、電流値を計測する必要がある。そこで、ドレイン-ソース端子間に電圧計10、パワーモジュール2aのドレイン-ソース電流が流れる経路であるパワーモジュール2aとパワーモジュール2dとの間には電流センサ12が設けられている。
To calculate the thermal resistance of the power module 2a, it is necessary to measure the voltage value and current value between the drain and source terminals. Therefore, the voltmeter 10 is provided between the drain and source terminals, and a current sensor 12 is provided between the power module 2a and the power module 2d, which is a path through which the drain-source current of the power module 2a flows.
熱抵抗計測時にパワーモジュール2aには一定の値のドレイン-ソース電流を流すようにするため、電流センサ12により検出されたパワーモジュール2aのドレイン-ソース電流は制御部9に入力され、ドレイン-ソース電流が常に一定となるように制御部9からパワーモジュール2dのゲートへオン/オフを周期的に繰り返す電圧を印加する。
The drain-source current of the power module 2a detected by the current sensor 12 is input to the control unit 9 so that a constant drain-source current flows through the power module 2a during the thermal resistance measurement. A voltage that periodically repeats on / off is applied from the control unit 9 to the gate of the power module 2d so that the current is always constant.
制御部9はパワーモジュール2dのゲート電圧のパルスのオン/オフの周期を変えることで、パワーモジュール2aに流す電流の値を制御する。なお、パワーモジュール2aのゲート電圧をオフにした場合にはドレイン-ソース端子間に電源13の高電圧が印加されるため、パワーモジュール2aのゲート電圧をオフにすると同時に電圧計10,11をパワーモジュール2aのドレイン端子、ソース端子から切り離すように制御部9が制御する。
The control unit 9 controls the value of the current flowing through the power module 2a by changing the ON / OFF cycle of the gate voltage pulse of the power module 2d. When the gate voltage of the power module 2a is turned off, the high voltage of the power source 13 is applied between the drain and source terminals, so that the voltmeters 10 and 11 are powered simultaneously with turning off the gate voltage of the power module 2a. The control unit 9 controls the module 2a so as to be disconnected from the drain terminal and the source terminal.
熱抵抗を計測するには、はじめに加熱前の素子温度を計測するため、パワーモジュール2aに定格の1/1000程度の電流が流れるようにする。次に、加熱のための電流をパワーモジュール2aに数秒程度流す。加熱中はパワーモジュール2aのゲート電圧をサンプリングする。加熱中にパワーモジュール2aのゲート電圧が減少した場合には、制御部9はパワーモジュール2dをオフにして、パワーモジュール2aのドレイン-ソース端子間に電流が流れないようにして熱抵抗計測を停止する。
In order to measure the thermal resistance, first, in order to measure the element temperature before heating, a current of about 1/1000 of the rated current flows through the power module 2a. Next, a current for heating is passed through the power module 2a for about several seconds. During the heating, the gate voltage of the power module 2a is sampled. When the gate voltage of the power module 2a decreases during heating, the control unit 9 turns off the power module 2d and stops measuring the thermal resistance so that no current flows between the drain and source terminals of the power module 2a. To do.
その後、パワーモジュール2aのドレイン-ソース間電流値を変えて再び加熱中のゲート電圧の変化をサンプリングし、加熱中にゲート電圧が一定もしくは増加する場合には、加熱後に素子温度測定用の電流が流し、このときのパワーモジュールのゲート電圧から素子温度を算出する。加熱前後の素子温度変化量を加熱電力値(p)で除することで熱抵抗が求められる。
Thereafter, the drain-source current value of the power module 2a is changed to sample the change in the gate voltage during heating again. If the gate voltage is constant or increased during the heating, the current for measuring the element temperature after heating is changed. The element temperature is calculated from the gate voltage of the power module at this time. The thermal resistance is obtained by dividing the amount of change in element temperature before and after heating by the heating power value (p).
以上説明した方法により、複数のMOSFETが内蔵されたパワーモジュールを有する電力変換装置について、素子間発熱バラつきを生じさせずに熱抵抗を精度良く計測することができる。
By the method described above, it is possible to accurately measure the thermal resistance of a power conversion device having a power module in which a plurality of MOSFETs are built in without causing variation in heat generation between elements.
なお、本発明は上記した実施例に限定されるものではなく、様々な変形例が含まれる。例えば、上記した実施例は本発明を分かりやすく説明するために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。また、ある実施例の構成の一部を他の実施例の構成に置き換えることが可能であり、また、ある実施例の構成に他の実施例の構成を加えることも可能である。また、各実施例の構成の一部について、他の構成の追加・削除・置換をすることが可能である。
In addition, this invention is not limited to the above-mentioned Example, Various modifications are included. For example, the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described. Further, a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. Further, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.
1a,1b…電流源、2,2a~2f…半導体素子(パワーモジュール)、3…電圧源、4…比較器、5…電力変換装置、6…MOSFET、7…パワーモジュール、8…熱抵抗計測部、9…制御部、10,11…電圧計、12…電流センサ、13…電源、14…モータ。
DESCRIPTION OF SYMBOLS 1a, 1b ... Current source, 2, 2a-2f ... Semiconductor element (power module), 3 ... Voltage source, 4 ... Comparator, 5 ... Power converter, 6 ... MOSFET, 7 ... Power module, 8 ... Thermal resistance measurement Part, 9 ... control part, 10, 11 ... voltmeter, 12 ... current sensor, 13 ... power supply, 14 ... motor.
Claims (10)
- パワーモジュールと、
前記パワーモジュールの熱抵抗を計測する熱抵抗計測部と、
前記パワーモジュールのゲート電圧を制御する制御部と、を備える電力変換装置であって、
前記パワーモジュールは、ソースおよびドレインを共通ノードとして互いに並列に接続された複数の半導体素子を有し、
前記制御部は、前記複数の半導体素子のドレイン-ソース間に所定のパルス電圧を印加することにより前記複数の半導体素子の各々を加熱するための電力を当該複数の半導体素子に印加し、
前記複数の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて前記熱抵抗計測部の動作を制御することを特徴とする電力変換装置。 A power module;
A thermal resistance measuring unit for measuring the thermal resistance of the power module;
A power converter comprising: a control unit that controls a gate voltage of the power module;
The power module includes a plurality of semiconductor elements connected in parallel with each other with a source and a drain as a common node,
The control unit applies power for heating each of the plurality of semiconductor elements to the plurality of semiconductor elements by applying a predetermined pulse voltage between the drain and source of the plurality of semiconductor elements,
A power conversion device that controls an operation of the thermal resistance measurement unit based on a result obtained by measuring a gate-source voltage of the plurality of semiconductor elements. - 請求項1に記載の電力変換装置であって、
前記制御部は、前記所定のパルス電圧を印加中に前記ゲート-ソース間電圧が減少する場合、前記熱抵抗計測部の動作を停止する機能を有することを特徴とする電力変換装置。 The power conversion device according to claim 1,
The control unit has a function of stopping the operation of the thermal resistance measurement unit when the gate-source voltage decreases during application of the predetermined pulse voltage. - 請求項1に記載の電力変換装置であって、
前記制御部は、前記所定の電圧を印加中に前記ゲート-ソース間電圧が一定もしくは増加する場合、前記所定のパルス電圧の印加を一定時間継続した後、前記熱抵抗計測部により前記パワーモジュールの熱抵抗を算出することを特徴とする電力変換装置。 The power conversion device according to claim 1,
When the gate-source voltage is constant or increased during the application of the predetermined voltage, the control unit continues the application of the predetermined pulse voltage for a predetermined time, and then the thermal resistance measurement unit performs the operation of the power module. A power converter that calculates thermal resistance. - 請求項1に記載の電力変換装置であって、
前記パワーモジュールは、U相、V相、W相の上下アームに各々半導体素子を配置した三相交流型のパワーモジュールであり、
前記制御部は、前記上下アームのうち一方のアームのU相、V相、W相のいずれかに接続された第1の半導体素子をオンとし、他方のアームのU相、V相、W相のいずれかに接続された第2の半導体素子をオンとなるようにゲート電圧を印加し、
前記第1の半導体素子および前記第2の半導体素子に所定のドレイン-ソース電流が流れるように前記第2の半導体素子のゲートへパルス電圧を周期的に印加し、
前記第1の半導体素子のドレイン-ソース間電圧が所定の値になるようにゲート電圧を印加し、
前記第1の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて前記熱抵抗計測部の動作を制御することを特徴とする電力変換装置。 The power conversion device according to claim 1,
The power module is a three-phase AC type power module in which semiconductor elements are arranged on the upper and lower arms of the U phase, V phase, and W phase,
The control unit turns on the first semiconductor element connected to one of the U phase, V phase, and W phase of one of the upper and lower arms, and the U phase, V phase, and W phase of the other arm. A gate voltage is applied to turn on the second semiconductor element connected to any one of
Applying a pulse voltage to the gate of the second semiconductor element periodically such that a predetermined drain-source current flows through the first semiconductor element and the second semiconductor element;
Applying a gate voltage so that a drain-source voltage of the first semiconductor element has a predetermined value;
A power conversion device that controls an operation of the thermal resistance measurement unit based on a result obtained by measuring a gate-source voltage of the first semiconductor element. - 請求項4に記載の電力変換装置であって、
前記制御部は、前記第1の半導体素子のゲート-ソース間電圧が減少する場合、前記第2の半導体素子のゲートをオフにして、前記熱抵抗計測部の動作を停止する機能を有することを特徴とする電力変換装置。 The power conversion device according to claim 4,
The control unit has a function of turning off the gate of the second semiconductor element and stopping the operation of the thermal resistance measurement unit when the gate-source voltage of the first semiconductor element decreases. A power conversion device. - ソースおよびドレインを共通ノードとして互いに並列に接続された複数の半導体素子を有するパワーモジュールの熱抵抗計測方法であって、
前記複数の半導体素子のドレイン-ソース間に所定のパルス電圧を印加することにより前記複数の半導体素子の各々を加熱するための電力を当該複数の半導体素子に印加し、
前記複数の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて熱抵抗計測の可否を判定することを特徴とするパワーモジュールの熱抵抗計測方法。 A method for measuring thermal resistance of a power module having a plurality of semiconductor elements connected in parallel with each other with a source and a drain as a common node,
Applying a predetermined pulse voltage between the drain and source of the plurality of semiconductor elements to apply electric power for heating each of the plurality of semiconductor elements to the plurality of semiconductor elements;
A method for measuring thermal resistance of a power module, comprising: determining whether thermal resistance measurement is possible based on a result obtained by measuring gate-source voltages of the plurality of semiconductor elements. - 請求項6に記載のパワーモジュールの熱抵抗計測方法であって、
前記所定のパルス電圧を印加中に前記ゲート-ソース間電圧が減少する場合、前記パワーモジュールの熱抵抗計測を停止することを特徴とするパワーモジュールの熱抵抗計測方法。 A thermal resistance measurement method for a power module according to claim 6,
A method for measuring a thermal resistance of a power module, wherein the measurement of thermal resistance of the power module is stopped when the gate-source voltage decreases during application of the predetermined pulse voltage. - 請求項6に記載のパワーモジュールの熱抵抗計測方法であって、
前記所定の電圧を印加中に前記ゲート-ソース間電圧が一定もしくは増加する場合、前記所定のパルス電圧の印加を一定時間継続した後、前記パワーモジュールの熱抵抗を算出することを特徴とするパワーモジュールの熱抵抗計測方法。 A thermal resistance measurement method for a power module according to claim 6,
When the gate-source voltage is constant or increases during the application of the predetermined voltage, the application of the predetermined pulse voltage is continued for a predetermined time, and then the thermal resistance of the power module is calculated. Module thermal resistance measurement method. - 請求項6に記載のパワーモジュールの熱抵抗計測方法であって、
前記パワーモジュールは、U相、V相、W相の上下アームに各々半導体素子を配置した三相交流型のパワーモジュールであり、
前記上下アームのうち一方のアームのU相、V相、W相のいずれかに接続された第1の半導体素子をオンとし、他方のアームのU相、V相、W相のいずれかに接続された第2の半導体素子をオンとなるようにゲート電圧を印加し、
前記第1の半導体素子および前記第2の半導体素子に所定のドレイン-ソース電流が流れるように前記第2の半導体素子のゲートへパルス電圧を周期的に印加し、
前記第1の半導体素子のドレイン-ソース間電圧が所定の値になるようにゲート電圧を印加し、
前記第1の半導体素子のゲート-ソース間電圧を測定して得られた結果に基づいて熱抵抗計測の可否を判定することを特徴とするパワーモジュールの熱抵抗計測方法。 A thermal resistance measurement method for a power module according to claim 6,
The power module is a three-phase AC type power module in which semiconductor elements are arranged on the upper and lower arms of the U phase, V phase, and W phase,
The first semiconductor element connected to one of the U-phase, V-phase, and W-phase of one of the upper and lower arms is turned on and connected to any of the U-phase, V-phase, and W-phase of the other arm. Applying a gate voltage so as to turn on the second semiconductor element,
Applying a pulse voltage to the gate of the second semiconductor element periodically such that a predetermined drain-source current flows through the first semiconductor element and the second semiconductor element;
Applying a gate voltage so that a drain-source voltage of the first semiconductor element has a predetermined value;
A method for measuring a thermal resistance of a power module, comprising: determining whether thermal resistance measurement is possible based on a result obtained by measuring a gate-source voltage of the first semiconductor element. - 請求項9に記載のパワーモジュールの熱抵抗計測方法であって、
前記第1の半導体素子のゲート電圧が減少する場合、前記第2の半導体素子のゲートをオフにして、前記パワーモジュールの熱抵抗計測を停止することを特徴とするパワーモジュールの熱抵抗計測方法。 A thermal resistance measurement method for a power module according to claim 9,
When the gate voltage of the first semiconductor element decreases, the gate of the second semiconductor element is turned off and the thermal resistance measurement of the power module is stopped.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-014053 | 2016-01-28 | ||
JP2016014053A JP6616699B2 (en) | 2016-01-28 | 2016-01-28 | Power converter and thermal resistance measurement method for power module |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017130573A1 true WO2017130573A1 (en) | 2017-08-03 |
Family
ID=59397620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/086140 WO2017130573A1 (en) | 2016-01-28 | 2016-12-06 | Power conversion device and thermal resistance measurement method for power module |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6616699B2 (en) |
WO (1) | WO2017130573A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107622958A (en) * | 2017-09-13 | 2018-01-23 | 北京工业大学 | A kind of accurate measurement method of heterogeneous semiconductor device longitudinal direction thermal resistance |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019244710A1 (en) | 2018-06-22 | 2019-12-26 | ソニー株式会社 | Slipping detection device |
CN112098797B (en) * | 2020-09-17 | 2021-12-14 | 南方电网科学研究院有限责任公司 | SiC power module thermal resistance measurement method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012145354A (en) * | 2011-01-07 | 2012-08-02 | Mitsubishi Electric Corp | Measurement method of thermal resistance |
JP2013258857A (en) * | 2012-06-13 | 2013-12-26 | Honda Motor Co Ltd | Semiconductor module and method for controlling the same |
JP2015526932A (en) * | 2012-06-11 | 2015-09-10 | ゼネラル・エレクトリック・カンパニイ | Apparatus and method for power switch health monitoring |
JP2016005289A (en) * | 2014-06-13 | 2016-01-12 | 株式会社日立製作所 | Power conversion device having deterioration diagnosis function |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832177A (en) * | 1981-08-20 | 1983-02-25 | Nec Corp | Measuring method for temperature in mosfet channel part |
JP6221408B2 (en) * | 2013-06-27 | 2017-11-01 | 富士電機株式会社 | Thermal resistance measuring method and thermal resistance measuring device |
-
2016
- 2016-01-28 JP JP2016014053A patent/JP6616699B2/en active Active
- 2016-12-06 WO PCT/JP2016/086140 patent/WO2017130573A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012145354A (en) * | 2011-01-07 | 2012-08-02 | Mitsubishi Electric Corp | Measurement method of thermal resistance |
JP2015526932A (en) * | 2012-06-11 | 2015-09-10 | ゼネラル・エレクトリック・カンパニイ | Apparatus and method for power switch health monitoring |
JP2013258857A (en) * | 2012-06-13 | 2013-12-26 | Honda Motor Co Ltd | Semiconductor module and method for controlling the same |
JP2016005289A (en) * | 2014-06-13 | 2016-01-12 | 株式会社日立製作所 | Power conversion device having deterioration diagnosis function |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107622958A (en) * | 2017-09-13 | 2018-01-23 | 北京工业大学 | A kind of accurate measurement method of heterogeneous semiconductor device longitudinal direction thermal resistance |
Also Published As
Publication number | Publication date |
---|---|
JP2017135868A (en) | 2017-08-03 |
JP6616699B2 (en) | 2019-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK3224631T3 (en) | Method for Determining Aging of Power Semiconductor Modules and Device and Circuit Device | |
KR101601363B1 (en) | Apparatus and method for power cycle test | |
Choi et al. | Advanced accelerated power cycling test for reliability investigation of power device modules | |
US10288672B2 (en) | Monitoring aging of power semiconductor devices based on case temperature | |
US11248966B2 (en) | Health monitoring and failure prognosis of power electronics devices | |
US9689754B2 (en) | Method and apparatus for estimating the temperature of a semiconductor chip | |
KR20190080764A (en) | Power conversion device and semiconductor device | |
JP6221408B2 (en) | Thermal resistance measuring method and thermal resistance measuring device | |
WO2017130573A1 (en) | Power conversion device and thermal resistance measurement method for power module | |
JP2014020892A5 (en) | ||
Zhang et al. | Online junction temperature monitoring using turn-off delay time for silicon carbide power devices | |
CN111505475B (en) | Method and device for calibrating parameters of electric heating model of power semiconductor module | |
JP5371353B2 (en) | Device for calculating junction temperature of semiconductor element in voltage type power converter | |
Ghimire et al. | An online V ce measurement and temperature estimation method for high power IGBT module in normal PWM operation | |
JP2016220481A (en) | Electric power conversion system | |
US11418104B2 (en) | Current measurement method for three-phase pulse width modulation inverter using real-time switch junction temperature estimation technique and three-phase pulse width modulation inverter system | |
KR102520851B1 (en) | Apparatus for estimating junction temperature of IGBT module | |
Zheng et al. | Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents | |
Jones et al. | Thermal characterization and design for a high density GaN-based power stage | |
Chen et al. | Driver Integrated Online R ds-on Monitoring Method for SiC Power Converters | |
Choi et al. | Advanced power cycling test for power module with on-line on-state V CE measurement | |
US20210408939A1 (en) | Power module for operating an electric vehicle drive with improved temperature determination of the power semiconductors | |
Lefebvre et al. | Discrete power semiconductor losses versus junction temperature estimation based on thermal impedance curves | |
CN116500400A (en) | Online in-situ characterization system and method for failure state of solder layer of silicon carbide power device | |
JP6218156B2 (en) | Power converter and control method of power converter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16888157 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16888157 Country of ref document: EP Kind code of ref document: A1 |