WO2017126098A1 - Dividing device for plate shaped member and dividing method for plate shaped member - Google Patents

Dividing device for plate shaped member and dividing method for plate shaped member Download PDF

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Publication number
WO2017126098A1
WO2017126098A1 PCT/JP2016/051816 JP2016051816W WO2017126098A1 WO 2017126098 A1 WO2017126098 A1 WO 2017126098A1 JP 2016051816 W JP2016051816 W JP 2016051816W WO 2017126098 A1 WO2017126098 A1 WO 2017126098A1
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Prior art keywords
plate
wafer
dividing
modified layer
shaped member
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PCT/JP2016/051816
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French (fr)
Japanese (ja)
Inventor
祐太 黒澤
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リンテック株式会社
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Priority to PCT/JP2016/051816 priority Critical patent/WO2017126098A1/en
Publication of WO2017126098A1 publication Critical patent/WO2017126098A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a plate member dividing apparatus and a plate member dividing method.
  • a plate-like member such as a semiconductor wafer (hereinafter sometimes abbreviated as “wafer”) has a diameter of 300 mm so that a half of a diameter of 200 mm is 725 ⁇ m, for example, according to SEMI (SemiconductorSEquipment and Materials International) standards. Is defined to have a thickness of 775 ⁇ m. Since such a wafer is formed with a large number of electronic circuits such as ICs and LSIs (hereinafter sometimes abbreviated as circuits), it is ground to, for example, about 50 ⁇ m to form semiconductor chips (individual pieces). More than 90% of them will be thrown away.
  • Patent Document 1 discloses a step of diffusing impurities on both sides of a semiconductor substrate (plate-like member) to form a diffusion region, a step of dividing the semiconductor substrate into two in the thickness direction, and a semiconductor substrate divided into two. And a step of polishing the opposite surface of the diffusion region to make a mirror surface.
  • the cutting member (diamond blade 17 in the slicing device) in the cutting means has to be enlarged as the diameter of the plate-shaped member (wafer) increases. As this increases, the cutting member is greatly shaken and distorted, and the thickness of the divided plate-like member cannot be accurately adjusted.
  • An object of the present invention is to provide a plate member dividing apparatus and a plate member dividing method capable of accurately adjusting the thickness of a divided plate member even when the plate member becomes large. .
  • a plate-like member dividing device includes a first support means for supporting one surface of a plate-like member, and one surface or the other surface of the plate-like member.
  • a modified layer forming means for forming a modified layer in which the plate-like member becomes brittle; a second support means for supporting the other surface of the plate-like member; the first support means and the second support means; Dividing means for dividing the plate-like member into a plurality of pieces along the modified layer.
  • the plate member dividing method of the present invention includes a modified layer forming step of forming a modified layer in which the plate member becomes brittle along one surface or the other surface of the plate member, and the modified layer And a dividing step of dividing the plate-like member into a plurality of pieces.
  • a molded object forming step of forming a molded object on at least one surface of the plate-shaped member may be included.
  • a reforming line forming step of forming a reforming line in which the plate-like member becomes brittle along the periphery of the modeled object may be provided.
  • the plate-shaped member may be cut along the periphery of the modeled object and separated into a plurality of individual pieces.
  • a modified layer in which the plate member becomes brittle is formed along one surface or the other surface of the plate member, and the plate member is divided into a plurality along the modified layer. Therefore, even if the cutting member is not shaken or distorted as in the prior art, and the plate member becomes large, the thickness of the divided plate member can be adjusted accurately.
  • a desired modeling object can be arbitrarily formed to a plate-like member after division or before division.
  • the reforming line forming step the plate-like member can be arbitrarily separated.
  • an individualization step the plate-like member can be arbitrarily individualized.
  • the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane.
  • the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane.
  • a plate-shaped member dividing apparatus 10 includes a first support means 20 that supports one surface of a wafer WF as a plate-shaped member, and one surface or the other surface of the wafer WF.
  • Dividing means 50 that divides the wafer WF into a plurality of pieces along the modified layer 11 by relatively moving 40.
  • the first support means 20 is supported by a linear motor 21 as a driving device and a slider 21A of the linear motor 21, and is capable of adsorbing and holding the wafer WF on the upper surface 22A by decompression means (not shown) such as a decompression pump or a vacuum ejector. And a support plate 22.
  • the modified layer forming means 30 includes a laser irradiation device 31 that can irradiate a strip laser beam 31 ⁇ / b> A having a width longer than the diameter of the wafer WF in the Y-axis direction.
  • the laser irradiation device 31 can focus on a predetermined position inside the wafer WF and make the focused position fragile.
  • the second support means 40 is supported by a linear motion rotation motor 41 as a drive device and an output shaft 41A of the linear motion rotation motor 41, and the wafer WF on the lower surface 42A by a decompression means (not shown) such as a decompression pump or a vacuum ejector. And a second support plate 42 capable of adsorbing and holding.
  • the dividing means 50 includes a linear motor 51 as a driving device that supports the linear motion rotation motor 41 by the slider 51A, and vibration applying means such as an ultrasonic vibration device or an eccentric motor provided in the second support plate 42. 52. Note that the rotating portion of the linear motion rotating motor 41 is a component of the dividing means 50.
  • a plate member dividing method using the plate member dividing apparatus 10 will be described.
  • a conveying means such as an operator or an articulated robot or a belt conveyor is provided with the first support plate 22.
  • a wafer WF is placed on the upper surface 22A of the substrate (plate-like member preparation step).
  • the linear motor 21 is driven to move the first support plate 22 to the right. As shown in FIGS.
  • the wafer WF is formed with a number of circuits CA such as ICs and LSIs on one surface, and streets ST are formed in a lattice pattern between the circuits CA. ing.
  • the wafer WF is first supported so that a surface protection member (not shown) such as an adhesive sheet or a resin is laminated on one surface where the circuit CA is formed, and the surface protection member abuts on the upper surface 22A. It is placed on the plate 22.
  • the modified layer forming unit 30 moves the laser irradiation device. 31 is driven, and irradiation of the strip-shaped laser beam 31A is started with a focus on the center in the vertical direction on the wafer WF. Thereafter, when the first support plate 22 continues to move to the right, the planar modified layer 11 along one surface or the other surface of the wafer WF is formed at the center position in the vertical direction of the wafer WF. (Modified layer forming step).
  • the first support means 20 stops driving the linear motor 21.
  • the second support means 40 drives the linear motion rotation motor 41, lowers the second support plate 42 and brings the lower surface 42A into contact with the upper surface of the wafer WF, and then drives the decompression means (not shown), The wafer WF is sucked and held by the lower surface 42A.
  • the dividing unit 50 drives the vibration applying unit 52 and also drives the linear motion rotation motor 41 to rotate the second support plate 42 within the lower surface 42A.
  • the wafer WF is divided into two along the modified layer 11 and is divided into a lower half wafer WF1 supported by the first support plate 22 and an upper half wafer WF2 supported by the second support plate 42. (Division process).
  • the dividing unit 50 drives the linear motor 51 to move the upper half wafer WF2 to the right, stops driving the decompression unit (not shown), and transfers the upper half wafer WF2 to the transfer unit (not shown). Further, when the second support means 40 also stops driving the decompression means (not shown) and transfers the lower half wafer WF1 to the transfer means (not shown), the first support means 20 and the dividing means 50 drive the linear motors 21, 51. The first and second support plates 22 and 42 are returned to the initial positions. Thereafter, the same operation as described above is repeated.
  • the modified layer 11 that makes the wafer WF fragile is formed along one surface or the other surface of the wafer WF, and a plurality of wafers WF are formed along the modified layer 11. Therefore, even if the wafer WF becomes larger, the thickness of the divided wafer WF (lower half, upper half wafers WF1, WF2) can be accurately adjusted. Can do.
  • the wafer WF can be divided faster than the conventional cutting member.
  • the modified layer 11 whose vertical width is narrower than the cut formed by the conventional cutting member can be formed, so that one wafer WF can be formed compared to the conventional cutting member. It can be divided into a number of divided wafers.
  • the means and steps in the present invention are not limited in any way as long as the operations, functions, or steps described for these means and steps can be performed.
  • the process is not limited at all.
  • the modified layer forming means can form a modified layer that makes the plate-like member fragile along one surface or the other surface of the plate-like member, it is in light of the common general technical knowledge at the time of filing. If it is in the range, it will not be limited at all (explanation about other means and processes is omitted).
  • a wafer WF on which no circuit CA is formed on both sides is prepared, and as shown in FIG. 4A, a model is formed at a stage before the wafer WF is placed on the first support plate 22.
  • the circuit CA may be formed on at least one surface of the wafer WF by the circuit forming means 60 as means (modeled object forming step).
  • the modeled object is not limited to a circuit pattern CA, a predetermined pattern, a picture, a pattern, a character, a number, a three-dimensional diagram, a concavo-convex pattern, or a combination thereof. There is no limitation as long as it can be formed.
  • circuit forming means 60 After dividing wafer WF into lower and upper half wafers WF1 and WF2, as shown in FIG. 4B, a circuit is formed on at least one surface of lower and upper half wafers WF1 and WF2 by circuit forming means 60. It is good (molded object formation process).
  • the reforming line forming means 70 includes a laser irradiation device 71 that irradiates a laser beam 71A, and is provided so as to be movable in the X-axis direction and the Y-axis direction by a driving device (not shown).
  • the laser irradiation device 71 can focus on a predetermined position inside the wafer WF and make the focused position fragile.
  • the reforming line forming means 70 defines the reforming line 12 from the surface of the lower half and upper half wafers WF1 and WF2 where the circuit CA is formed or from the surface where the circuit CA is not formed. Can be formed.
  • the reforming line 12 may be formed by stopping the movement of the laser irradiation device 71 and moving the lower and upper half wafers WF1 and WF2 or by moving both of them. As shown in FIG.
  • the lower half and upper half wafers WF1 and WF2 on which the reforming line 12 is formed are held by holding means 80 such as a deformable adhesive sheet or a suction member, and the holding means 80 is pulled.
  • the reforming line 12 is divided into a plurality of semiconductor chips (hereinafter, may be abbreviated as chips) CP as individual pieces.
  • the lower half and upper half wafers WF1 and WF2 in which the reforming line 12 is formed may be bent into individual chips CP.
  • the lower half and upper half wafers WF1 and WF2 are cut along the periphery of the circuit CA (along the street ST). It may be cut by a cutting means BL such as a blade, a laser irradiation device, etching, etc., and divided into a plurality of chips CP (single piece process).
  • the cutting means BL is provided on the lower half and upper half wafers WF1, WF1, WF2 from the surface where the circuit CA is formed or from the surface where the circuit CA is not formed. WF2 can be cut.
  • the reforming line 12 is formed by the reforming line forming means 70 as described above, the lower half and upper half wafers WF1, WF2 may be cut along the reforming line 12 by the cutting means BL.
  • the dividing surface of the lower half and upper half wafers WF1, WF2 or the plurality of chips CP may be ground by a grinding means 90 such as a laser irradiation device or etching, and then ground to a predetermined thickness of 30 ⁇ m or 50 ⁇ m (grinding) Process).
  • the first support means 20 may be configured to support the wafer WF with a support member such as an adhesive or a mechanical chuck.
  • the first support means 20 may move to form the modified layer 11 by moving the modified layer forming means 30 without moving, or both may move to form the modified layer 11.
  • the first support means 20 may support the wafer WF from the surface where the circuit CA is not formed.
  • the laser irradiation device 31 can change the width in the Y-axis direction of the strip-shaped laser light 31A according to the diameter of the wafer WF.
  • the laser irradiation device 31 changes the width in the Y-axis direction of the strip-shaped laser light 31A according to the change in the width.
  • the laser irradiation apparatus 102 can also focus on a predetermined position inside the wafer WF and make the focused position fragile.
  • the first support means 20 drives the linear motor 21 and intermittently feeds the first support plate 22.
  • the modified layer forming means 100 drives the linear motor 101 to move the laser irradiation device 102 in the Y-axis direction and have a predetermined width in the X-axis direction. 11 is formed. Thereafter, the first support means 20 drives the linear motor 21 to move the first support plate 22 to the right by the width of the belt-like laser beam 102A in the X-axis direction and stop. Next, the modified layer forming means 100 drives the linear motor 101 to move the laser irradiation device 102 in the Y-axis direction to form the modified layer 11 having a predetermined width in the X-axis direction. Repeated.
  • the width in the X-axis direction of the belt-shaped laser beam 102A in the laser irradiation apparatus 102 is made larger than the diameter of the wafer WF, and the laser irradiation apparatus 102 is moved once or twice in the Y-axis direction to modify the modified layer 11. May be formed.
  • the laser irradiation apparatus 102 changes the width in the X-axis direction of the belt-shaped laser light 102A in accordance with the change in the width.
  • the modified layer forming means 30 may form the modified layer 11 from the side where the circuit CA is formed, or may form the modified layer 11 from both sides of the wafer WF.
  • the second support means 40 may be configured to support the wafer WF with a support member such as an adhesive or a mechanical chuck.
  • the dividing unit 50 may not include the vibration applying unit 52.
  • the dividing means 50 moves the first support plate 22 to the left, moves the second support plate 42 to the right, or moves both of them away from each other without rotating the second support plate 42.
  • the wafer WF may be divided.
  • the dividing means 50 may rotate the first support plate 22 without rotating the second support plate 42 to divide the wafer WF, rotate both of them in the opposite direction, or both of them in the same direction.
  • the wafer WF may be divided by varying the rotation amount.
  • the dividing unit 50 may divide the wafer WF by driving the vibration applying unit 52 without rotating the second support plate 42. As long as the wafer WF can be divided, the dividing unit 50 may be provided with at least one of the rotating portions of the linear motor 51, the vibration applying unit 52, and the linear motion rotating motor 41.
  • the plate-like member in addition to a semiconductor wafer, for example, a circuit board, a base board, a lead frame, a glass plate, a steel plate, ceramics, a wooden plate, or a resin plate may be used. It is not a thing. Therefore, the individual piece may be cut from any member or article in any form, and is not limited at all.
  • the wafer WF include a disk-shaped silicon semiconductor wafer, a SiC (silicon carbide) wafer, a sapphire wafer, and a compound semiconductor wafer.
  • Examples of the compound semiconductor wafer include a GaP (gallium phosphide) wafer, a GaA (gallium arsenide) wafer, an InP (indium gallium phosphide) wafer, and a GaN (gallium nitride) wafer.
  • the circuit CA may be anything, for example, the circuit CA may have a through electrode (or only have a through electrode). In this case, a step of embedding the through electrode can be provided, and the wafer WF in which the through electrode is embedded in the dividing step can be divided into two within the thickness to form a plurality of wafers with the through electrode.
  • the wafer WF may have any thickness such as 725 ⁇ m and 625 ⁇ m, and may have any diameter such as 300 mm and 450 mm.
  • the shape of the wafer WF may be any shape such as a circle, a D shape, an ellipse, a rectangle, and other polygons.
  • the wafer WF may have the circuit CA formed in advance on at least one surface thereof, or the circuit CA may not be formed on both surfaces.
  • the circuit formed on the wafer WF may have a different size and pattern on one surface and the other surface.
  • the surface protection member may be laminated on at least one surface of the wafer WF, or the surface protection member may not be laminated on both surfaces.
  • the plate-shaped member dividing apparatus 10 may further form the modified layer 11 on the two-divided wafer WF to divide the wafer WF into three or more.
  • the drive device in the embodiment employs an electric device such as a rotation motor, a linear motion motor, a linear motor, a single-axis robot, and an articulated robot, an actuator such as an air cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder.
  • an electric device such as a rotation motor, a linear motion motor, a linear motor, a single-axis robot, and an articulated robot
  • an actuator such as an air cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

A dividing device (10) for a plate shaped member is provided with: a first support means (20) for supporting one surface of a wafer (WF) which is the plate shaped member; a modified layer forming means (30) for forming a modified layer (11) wherein the wafer (WF) becomes brittle along one surface or the other surface of the wafer (WF); a second support means (40) for supporting the other surface of the wafer (WF); and a dividing means (50) for dividing the wafer (WF) into a plurality of pieces along the modified layer (11) by moving the first support means (20) and the second support means (40) relative to each other. A dividing method for a plate shaped member has: a modified layer forming step for forming the modified layer (11) wherein the plate shaped member becomes brittle along one surface or the other surface of the plate shaped member; and a dividing step for dividing the plate shaped member into a plurality of pieces along the modified layer (11).

Description

板状部材の分割装置および板状部材の分割方法Plate-shaped member dividing apparatus and plate-shaped member dividing method
　本発明は、板状部材の分割装置および板状部材の分割方法に関する。 The present invention relates to a plate member dividing apparatus and a plate member dividing method.
　半導体ウエハ（以下、ウエハと省略する場合がある）等の板状部材は、例えばＳＥＭＩ（Semiconductor Equipment and Materials International）規格により、直径が２００ｍｍの半ものは厚みが７２５μｍになるように、直径が３００ｍｍのものは厚みが７７５μｍとなるようにと規定されている。このようなウエハは、多数のＩＣやＬＳＩ等の電子回路（以下、回路と略称する場合がある）が形成された後、例えば５０μｍ前後にまで研削されて半導体チップ（個片体）となるので、その９割以上が捨てられることになる。 A plate-like member such as a semiconductor wafer (hereinafter sometimes abbreviated as “wafer”) has a diameter of 300 mm so that a half of a diameter of 200 mm is 725 μm, for example, according to SEMI (SemiconductorSEquipment and Materials International) standards. Is defined to have a thickness of 775 μm. Since such a wafer is formed with a large number of electronic circuits such as ICs and LSIs (hereinafter sometimes abbreviated as circuits), it is ground to, for example, about 50 μm to form semiconductor chips (individual pieces). More than 90% of them will be thrown away.
　特許文献１には、半導体基板（板状部材）の両面に不純物を拡散して拡散領域を形成する工程と、上記半導体基板を厚み方向で２分割する工程と、２分割されたそれぞれの半導体基板における拡散領域の反対面を研磨して鏡面化する工程とを備える半導体基板の製造方法が記載されている。 Patent Document 1 discloses a step of diffusing impurities on both sides of a semiconductor substrate (plate-like member) to form a diffusion region, a step of dividing the semiconductor substrate into two in the thickness direction, and a semiconductor substrate divided into two. And a step of polishing the opposite surface of the diffusion region to make a mirror surface.
特開平１－１１４０４４号公報Japanese Patent Laid-Open No. 1-114044
　しかしながら、このような従来の板状部材の分割方法では、板状部材（ウエハ）の直径が大きくなるに従って切断手段における切断部材（スライシング装置におけるダイヤモンドブレード１７）を大きくしなければならず、切断部材が大きくなるに従って当該切断部材のぶれや歪みが大きくなり、分割後の板状部材の厚みを正確に調節することができなくなるという不都合がある。 However, in such a conventional method for dividing a plate-shaped member, the cutting member (diamond blade 17 in the slicing device) in the cutting means has to be enlarged as the diameter of the plate-shaped member (wafer) increases. As this increases, the cutting member is greatly shaken and distorted, and the thickness of the divided plate-like member cannot be accurately adjusted.
　本発明の目的は、板状部材が大きくなっても、分割後の板状部材の厚みを正確に調節することができる板状部材の分割装置および板状部材の分割方法を提供することである。 An object of the present invention is to provide a plate member dividing apparatus and a plate member dividing method capable of accurately adjusting the thickness of a divided plate member even when the plate member becomes large. .
　上記目的を解決するために、本発明の板状部材の分割装置は、板状部材の一方の面を支持する第１支持手段と、前記板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成する改質層形成手段と、前記板状部材の他方の面を支持する第２支持手段と、前記第１支持手段および前記第２支持手段を相対移動させて前記改質層に沿って前記板状部材を複数に分割する分割手段とを備えている。 In order to solve the above object, a plate-like member dividing device according to the present invention includes a first support means for supporting one surface of a plate-like member, and one surface or the other surface of the plate-like member. A modified layer forming means for forming a modified layer in which the plate-like member becomes brittle; a second support means for supporting the other surface of the plate-like member; the first support means and the second support means; Dividing means for dividing the plate-like member into a plurality of pieces along the modified layer.
　本発明の板状部材の分割方法は、板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成する改質層形成工程と、前記改質層に沿って前記板状部材を複数に分割する分割工程とを有している。 The plate member dividing method of the present invention includes a modified layer forming step of forming a modified layer in which the plate member becomes brittle along one surface or the other surface of the plate member, and the modified layer And a dividing step of dividing the plate-like member into a plurality of pieces.
　前記板状部材の少なくとも一方の面に造形物を形成する造形物形成工程を有していてもよい。 A molded object forming step of forming a molded object on at least one surface of the plate-shaped member may be included.
　前記造形物の周囲に沿って前記板状部材が脆弱になる改質ラインを形成する改質ライン形成工程を有していてもよい。 A reforming line forming step of forming a reforming line in which the plate-like member becomes brittle along the periphery of the modeled object may be provided.
　前記造形物の周囲に沿って前記板状部材を切断し、複数の個片体に個片化する個片化工程を有していてもよい。 </ RTI> The plate-shaped member may be cut along the periphery of the modeled object and separated into a plurality of individual pieces.
　本発明によれば、板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成し、当該改質層に沿って板状部材を複数に分割するので、従来のような切断部材のぶれや歪みがなくなり、板状部材が大きくなっても、分割後の板状部材の厚みを正確に調節することができる。
　造形物形成工程を有することで、分割後または分割前の板状部材に対し、所望の造形物を任意に形成することができる。
　改質ライン形成工程を有することで、板状部材を任意に個片化することができる。
　個片化工程を有することで、板状部材を任意に個片化することができる。 According to the present invention, a modified layer in which the plate member becomes brittle is formed along one surface or the other surface of the plate member, and the plate member is divided into a plurality along the modified layer. Therefore, even if the cutting member is not shaken or distorted as in the prior art, and the plate member becomes large, the thickness of the divided plate member can be adjusted accurately.
By having a modeling object formation process, a desired modeling object can be arbitrarily formed to a plate-like member after division or before division.
By having the reforming line forming step, the plate-like member can be arbitrarily separated.
By having an individualization step, the plate-like member can be arbitrarily individualized.
本実施形態に係る板状部材の分割装置の側面図。The side view of the division apparatus of the plate-shaped member which concerns on this embodiment. 上記板状部材の分割装置の部分正面図。The fragmentary front view of the division apparatus of the said plate-shaped member. 上記実施形態に係る板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division method of the plate-shaped member which concerns on the said embodiment. 上記実施形態に係る板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division method of the plate-shaped member which concerns on the said embodiment. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification. 変形例の板状部材の分割方法の工程の説明図。Explanatory drawing of the process of the division | segmentation method of the plate-shaped member of a modification.
　以下、本発明の一実施形態に係る板状部材の分割装置を図１に基づいて説明する。なお、本明細書におけるＸ軸、Ｙ軸、Ｚ軸は、それぞれが直交する関係にあり、Ｘ軸およびＹ軸は、所定平面内の軸とし、Ｚ軸は、前記所定平面に直交する軸とする。さらに、本実施形態では、Ｙ軸と平行な図１の手前方向から観た場合を基準とし、方向を示した場合、「上」がＺ軸の矢印方向で「下」がその逆方向、「左」がＸ軸の矢印方向で「右」がその逆方向、「前」がＹ軸方向であって紙面に直交する手前方向、「後」がその逆方向とする。 Hereinafter, a plate-shaped member dividing apparatus according to an embodiment of the present invention will be described with reference to FIG. In this specification, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane. To do. Furthermore, in the present embodiment, when viewed from the near side of FIG. 1 parallel to the Y axis, when indicating the direction, “up” is the arrow direction of the Z axis, “down” is the opposite direction, “ “Left” is the X-axis arrow direction, “Right” is the opposite direction, “Front” is the Y-axis direction and is the front direction orthogonal to the paper surface, and “Back” is the opposite direction.
　図１において、本実施形態に係る板状部材の分割装置１０は、板状部材としてのウエハＷＦの一方の面を支持する第１支持手段２０と、ウエハＷＦの一方の面または他方の面に沿って当該ウエハＷＦが脆弱になる改質層１１を形成する改質層形成手段３０と、ウエハＷＦの他方の面を支持する第２支持手段４０と、第１支持手段２０および第２支持手段４０を相対移動させて改質層１１に沿ってウエハＷＦを複数に分割する分割手段５０とを備えている。 In FIG. 1, a plate-shaped member dividing apparatus 10 according to the present embodiment includes a first support means 20 that supports one surface of a wafer WF as a plate-shaped member, and one surface or the other surface of the wafer WF. A modified layer forming means 30 for forming the modified layer 11 along which the wafer WF becomes brittle, a second support means 40 for supporting the other surface of the wafer WF, a first support means 20 and a second support means. Dividing means 50 that divides the wafer WF into a plurality of pieces along the modified layer 11 by relatively moving 40.
　第１支持手段２０は、駆動機器としてのリニアモータ２１と、リニアモータ２１のスライダ２１Ａに支持され、減圧ポンプや真空エジェクタ等の図示しない減圧手段によって上面２２ＡでウエハＷＦを吸着保持可能な第１支持プレート２２とを備えている。 The first support means 20 is supported by a linear motor 21 as a driving device and a slider 21A of the linear motor 21, and is capable of adsorbing and holding the wafer WF on the upper surface 22A by decompression means (not shown) such as a decompression pump or a vacuum ejector. And a support plate 22.
　改質層形成手段３０は、図２に示すように、Ｙ軸方向にウエハＷＦの直径よりも長い幅の帯状レーザ光３１Ａを照射可能なレーザ照射装置３１を備えている。レーザ照射装置３１は、ウエハＷＦの内部における所定の位置に焦点を合わせ、当該焦点とされた位置を脆弱にすることができる。 As shown in FIG. 2, the modified layer forming means 30 includes a laser irradiation device 31 that can irradiate a strip laser beam 31 </ b> A having a width longer than the diameter of the wafer WF in the Y-axis direction. The laser irradiation device 31 can focus on a predetermined position inside the wafer WF and make the focused position fragile.
　第２支持手段４０は、駆動機器としての直動回動モータ４１と、直動回動モータ４１の出力軸４１Ａに支持され、減圧ポンプや真空エジェクタ等の図示しない減圧手段によって下面４２ＡでウエハＷＦを吸着保持可能な第２支持プレート４２とを備えている。 The second support means 40 is supported by a linear motion rotation motor 41 as a drive device and an output shaft 41A of the linear motion rotation motor 41, and the wafer WF on the lower surface 42A by a decompression means (not shown) such as a decompression pump or a vacuum ejector. And a second support plate 42 capable of adsorbing and holding.
　分割手段５０は、そのスライダ５１Ａで直動回動モータ４１を支持する駆動機器としてのリニアモータ５１と、第２支持プレート４２の内部に設けられた超音波振動装置や偏心モータ等の振動付与手段５２とを備えている。なお、直動回動モータ４１における回動部は、分割手段５０の構成部材である。 The dividing means 50 includes a linear motor 51 as a driving device that supports the linear motion rotation motor 41 by the slider 51A, and vibration applying means such as an ultrasonic vibration device or an eccentric motor provided in the second support plate 42. 52. Note that the rotating portion of the linear motion rotating motor 41 is a component of the dividing means 50.
　次に、本実施形態に係る板状部材の分割装置１０を用いた板状部材の分割方法について説明する。
　先ず、各部材が初期位置に配置された図１中実線で示す状態の板状部材の分割装置１０に対し、作業者または多関節ロボットやベルトコンベア等の図示しない搬送手段が第１支持プレート２２の上面２２ＡにウエハＷＦを載置する（板状部材用意工程）。次いで、第１支持手段２０が図示しない減圧手段を駆動し、上面２２ＡでウエハＷＦを吸着保持した後、リニアモータ２１を駆動し、第１支持プレート２２を右方へ移動させる。なお、ウエハＷＦは、図３Ａ、図３Ｂに示すように、一方の面に多数のＩＣやＬＳＩ等の造形物としての回路ＣＡが形成され、各回路ＣＡ間にストリートＳＴが格子状に形成されている。本実施形態の場合、ウエハＷＦは、回路ＣＡが形成された一方の面に接着シートや樹脂等の図示しない表面保護部材が積層され、当該表面保護部材が上面２２Ａに当接するように第１支持プレート２２に載置される。 Next, a plate member dividing method using the plate member dividing apparatus 10 according to the present embodiment will be described.
First, with respect to the plate-like member dividing apparatus 10 in the state indicated by the solid line in FIG. 1 in which each member is arranged at the initial position, a conveying means (not shown) such as an operator or an articulated robot or a belt conveyor is provided with the first support plate 22. A wafer WF is placed on the upper surface 22A of the substrate (plate-like member preparation step). Next, after the first support unit 20 drives a decompression unit (not shown) and sucks and holds the wafer WF on the upper surface 22A, the linear motor 21 is driven to move the first support plate 22 to the right. As shown in FIGS. 3A and 3B, the wafer WF is formed with a number of circuits CA such as ICs and LSIs on one surface, and streets ST are formed in a lattice pattern between the circuits CA. ing. In the case of the present embodiment, the wafer WF is first supported so that a surface protection member (not shown) such as an adhesive sheet or a resin is laminated on one surface where the circuit CA is formed, and the surface protection member abuts on the upper surface 22A. It is placed on the plate 22.
　第１支持プレート２２の右方への移動中、ウエハＷＦの右端部がレーザ照射装置３１のレーザ照射位置（レーザ照射装置３１の直下位置）に到達すると、改質層形成手段３０がレーザ照射装置３１を駆動し、ウエハＷＦにおける上下方向の中心に焦点をおいて帯状レーザ光３１Ａの照射を開始する。その後も第１支持プレート２２の右方への移動が継続されると、ウエハＷＦにおける上下方向の中心位置にウエハＷＦの一方の面または他方の面に沿う面状の改質層１１が形成される（改質層形成工程）。そして、ウエハＷＦの左端部がレーザ照射位置を通過し、当該ウエハＷＦが第２支持プレート４２の直下に到達すると、第１支持手段２０がリニアモータ２１の駆動を停止する。 When the right end portion of the wafer WF reaches the laser irradiation position of the laser irradiation device 31 (a position directly below the laser irradiation device 31) during the movement of the first support plate 22 to the right, the modified layer forming unit 30 moves the laser irradiation device. 31 is driven, and irradiation of the strip-shaped laser beam 31A is started with a focus on the center in the vertical direction on the wafer WF. Thereafter, when the first support plate 22 continues to move to the right, the planar modified layer 11 along one surface or the other surface of the wafer WF is formed at the center position in the vertical direction of the wafer WF. (Modified layer forming step). When the left end portion of the wafer WF passes through the laser irradiation position and the wafer WF reaches just below the second support plate 42, the first support means 20 stops driving the linear motor 21.
　次に、第２支持手段４０が直動回動モータ４１を駆動し、第２支持プレート４２を下降させて下面４２ＡをウエハＷＦの上面に当接させた後、図示しない減圧手段を駆動し、下面４２ＡでウエハＷＦを吸着保持する。そして、分割手段５０が振動付与手段５２を駆動するとともに、直動回動モータ４１を駆動し、下面４２Ａ内で第２支持プレート４２を回転させる。これにより、ウエハＷＦは、改質層１１に沿って２分割され、第１支持プレート２２に支持された下半ウエハＷＦ１と第２支持プレート４２に支持された上半ウエハＷＦ２とに分割される（分割工程）。その後、分割手段５０がリニアモータ５１を駆動し、上半ウエハＷＦ２を右方に移動させ、図示しない減圧手段の駆動を停止して当該上半ウエハＷＦ２を図示しない搬送手段に受け渡す。また、第２支持手段４０も図示しない減圧手段の駆動を停止して下半ウエハＷＦ１を図示しない搬送手段に受け渡すと、第１支持手段２０および分割手段５０がリニアモータ２１、５１を駆動し、第１、第２支持プレート２２、４２を初期位置に復帰させる。そして、以降上記同様の動作が繰り返される。 Next, the second support means 40 drives the linear motion rotation motor 41, lowers the second support plate 42 and brings the lower surface 42A into contact with the upper surface of the wafer WF, and then drives the decompression means (not shown), The wafer WF is sucked and held by the lower surface 42A. Then, the dividing unit 50 drives the vibration applying unit 52 and also drives the linear motion rotation motor 41 to rotate the second support plate 42 within the lower surface 42A. Thus, the wafer WF is divided into two along the modified layer 11 and is divided into a lower half wafer WF1 supported by the first support plate 22 and an upper half wafer WF2 supported by the second support plate 42. (Division process). Thereafter, the dividing unit 50 drives the linear motor 51 to move the upper half wafer WF2 to the right, stops driving the decompression unit (not shown), and transfers the upper half wafer WF2 to the transfer unit (not shown). Further, when the second support means 40 also stops driving the decompression means (not shown) and transfers the lower half wafer WF1 to the transfer means (not shown), the first support means 20 and the dividing means 50 drive the linear motors 21, 51. The first and second support plates 22 and 42 are returned to the initial positions. Thereafter, the same operation as described above is repeated.
　以上のような実施形態によれば、ウエハＷＦの一方の面または他方の面に沿って当該ウエハＷＦが脆弱になる改質層１１を形成し、当該改質層１１に沿ってウエハＷＦを複数に分割するので、従来のような切断部材のぶれや歪みがなくなり、ウエハＷＦが大きくなっても、分割後のウエハＷＦ（下半、上半ウエハＷＦ１、ＷＦ２）の厚みを正確に調節することができる。
　また、本発明によれば、従来の切断部材よりも速くウエハＷＦを分割することができる。
　さらに、本発明によれば、従来の切断部材によって形成される切込よりも上下方向の幅が狭い改質層１１を形成することができるので、従来の切断部材に比べて１のウエハＷＦを沢山の分割後のウエハに分割することができる。 According to the embodiment as described above, the modified layer 11 that makes the wafer WF fragile is formed along one surface or the other surface of the wafer WF, and a plurality of wafers WF are formed along the modified layer 11. Therefore, even if the wafer WF becomes larger, the thickness of the divided wafer WF (lower half, upper half wafers WF1, WF2) can be accurately adjusted. Can do.
Moreover, according to the present invention, the wafer WF can be divided faster than the conventional cutting member.
Furthermore, according to the present invention, the modified layer 11 whose vertical width is narrower than the cut formed by the conventional cutting member can be formed, so that one wafer WF can be formed compared to the conventional cutting member. It can be divided into a number of divided wafers.
　本発明における手段および工程は、それら手段および工程について説明した動作、機能または工程を果たすことのできる限りなんら限定されるものではなく、まして、前記実施形態で示した単なる１実施形態の構成物や工程に全く限定されるものではない。例えば、改質層形成手段は、板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成可能なものであれば、出願当初の技術常識に照らし合わせてその範囲内であればなんら限定されることはない（他の手段および工程についての説明は省略する）。 The means and steps in the present invention are not limited in any way as long as the operations, functions, or steps described for these means and steps can be performed. The process is not limited at all. For example, if the modified layer forming means can form a modified layer that makes the plate-like member fragile along one surface or the other surface of the plate-like member, it is in light of the common general technical knowledge at the time of filing. If it is in the range, it will not be limited at all (explanation about other means and processes is omitted).
　板状部材用意工程において、両面に回路ＣＡが形成されていないウエハＷＦを用意し、図４Ａに示すように、当該ウエハＷＦを第１支持プレート２２に載置する前の段階で、造形物形成手段としての回路形成手段６０によって当該ウエハＷＦの少なくとも一方の面に回路ＣＡを形成してもよい（造形物形成工程）。
　造形物は、回路ＣＡ以外に、所定の図柄、絵、模様、文字、数字、立体図、凹凸模様またはそれらを組み合わせたもの等、何ら限定されることはなく、造形物形成手段も、それらを形成できるものであれば何ら限定されることはない。 In the plate-like member preparation process, a wafer WF on which no circuit CA is formed on both sides is prepared, and as shown in FIG. 4A, a model is formed at a stage before the wafer WF is placed on the first support plate 22. The circuit CA may be formed on at least one surface of the wafer WF by the circuit forming means 60 as means (modeled object forming step).
The modeled object is not limited to a circuit pattern CA, a predetermined pattern, a picture, a pattern, a character, a number, a three-dimensional diagram, a concavo-convex pattern, or a combination thereof. There is no limitation as long as it can be formed.
　ウエハＷＦを下半、上半ウエハＷＦ１、ＷＦ２に分割した後に、図４Ｂに示すように、回路形成手段６０によってそれら下半、上半ウエハＷＦ１、ＷＦ２の少なくとも一方の面に回路を形成してもよい（造形物形成工程）。 After dividing wafer WF into lower and upper half wafers WF1 and WF2, as shown in FIG. 4B, a circuit is formed on at least one surface of lower and upper half wafers WF1 and WF2 by circuit forming means 60. It is good (molded object formation process).
　ウエハＷＦを下半、上半ウエハＷＦ１、ＷＦ２に分割した後に、図５Ａに示すように、改質ライン形成手段７０によって回路ＣＡの周囲に沿って（ストリートＳＴに沿って）それら下半、上半ウエハＷＦ１、ＷＦ２が脆弱になる改質ライン１２を形成してもよい（改質ライン形成工程）。改質ライン形成手段７０は、レーザ光７１Ａを照射するレーザ照射装置７１を備え、図示しない駆動機器によってＸ軸方向とＹ軸方向とに移動可能に設けられている。レーザ照射装置７１は、ウエハＷＦの内部における所定の位置に焦点を合わせ、当該焦点とされた位置を脆弱にすることができる。改質ライン形成手段７０は、下半、上半ウエハＷＦ１、ＷＦ２の回路ＣＡが形成された面からでも、回路ＣＡが形成されていない面からでも、それら両方も面からでも改質ライン１２を形成することができる。なお、レーザ照射装置７１の移動を停止させておき、下半、上半ウエハＷＦ１、ＷＦ２を移動させたり、それら両方を移動させたりして改質ライン１２を形成してもよい。改質ライン１２が形成された下半、上半ウエハＷＦ１、ＷＦ２は、図５Ｂに示すように、変形可能な接着シートや吸着部材等の保持手段８０で保持され、当該保持手段８０が引っ張られることで改質ライン１２で複数の個片体としての半導体チップ（以下、チップと省略する場合がある）ＣＰに個片化される。また、改質ライン１２が形成された下半、上半ウエハＷＦ１、ＷＦ２を折り曲ることで、複数のチップＣＰに個片化してもよい。 After the wafer WF is divided into the lower half and upper half wafers WF1 and WF2, as shown in FIG. 5A, the lower and upper half of the circuit WF is formed along the periphery of the circuit CA (along the street ST) by the reforming line forming means 70. A modified line 12 in which the half-wafers WF1 and WF2 become brittle may be formed (modified line forming step). The reforming line forming means 70 includes a laser irradiation device 71 that irradiates a laser beam 71A, and is provided so as to be movable in the X-axis direction and the Y-axis direction by a driving device (not shown). The laser irradiation device 71 can focus on a predetermined position inside the wafer WF and make the focused position fragile. The reforming line forming means 70 defines the reforming line 12 from the surface of the lower half and upper half wafers WF1 and WF2 where the circuit CA is formed or from the surface where the circuit CA is not formed. Can be formed. Alternatively, the reforming line 12 may be formed by stopping the movement of the laser irradiation device 71 and moving the lower and upper half wafers WF1 and WF2 or by moving both of them. As shown in FIG. 5B, the lower half and upper half wafers WF1 and WF2 on which the reforming line 12 is formed are held by holding means 80 such as a deformable adhesive sheet or a suction member, and the holding means 80 is pulled. Thus, the reforming line 12 is divided into a plurality of semiconductor chips (hereinafter, may be abbreviated as chips) CP as individual pieces. Further, the lower half and upper half wafers WF1 and WF2 in which the reforming line 12 is formed may be bent into individual chips CP.
　ウエハＷＦを下半、上半ウエハＷＦ１、ＷＦ２に分割した後に、図６に示すように、回路ＣＡの周囲に沿って（ストリートＳＴに沿って）それら下半、上半ウエハＷＦ１、ＷＦ２を切削ブレード、レーザ照射装置、エッチング等の切断手段ＢＬによって切断し、複数のチップＣＰに個片化してもよい（個片化工程）。切断手段ＢＬは、下半、上半ウエハＷＦ１、ＷＦ２の回路ＣＡが形成された面からでも、回路ＣＡが形成されていない面からでも、それら両方も面からでも下半、上半ウエハＷＦ１、ＷＦ２を切断することができる。
　上述のように改質ライン形成手段７０によって改質ライン１２を形成した後、切断手段ＢＬによって改質ライン１２に沿って下半、上半ウエハＷＦ１、ＷＦ２を切断してもよい。 After the wafer WF is divided into the lower half and upper half wafers WF1 and WF2, as shown in FIG. 6, the lower half and upper half wafers WF1 and WF2 are cut along the periphery of the circuit CA (along the street ST). It may be cut by a cutting means BL such as a blade, a laser irradiation device, etching, etc., and divided into a plurality of chips CP (single piece process). The cutting means BL is provided on the lower half and upper half wafers WF1, WF1, WF2 from the surface where the circuit CA is formed or from the surface where the circuit CA is not formed. WF2 can be cut.
After the reforming line 12 is formed by the reforming line forming means 70 as described above, the lower half and upper half wafers WF1, WF2 may be cut along the reforming line 12 by the cutting means BL.
　ウエハＷＦを下半、上半ウエハＷＦ１、ＷＦ２に分割した後や、下半、上半ウエハＷＦ１、ＷＦ２を複数のチップＣＰに個片化した後、図７に示すように、砥石、研削ブレードレーザ照射装置、エッチング等の研削手段９０で下半、上半ウエハＷＦ１、ＷＦ２または複数のチップＣＰの分割面を研削し、それらを３０μｍや５０μｍといった所定の厚みにまで研削してもよい（研削工程）。 After the wafer WF is divided into the lower half and upper half wafers WF1 and WF2, or after the lower half and upper half wafers WF1 and WF2 are separated into a plurality of chips CP, as shown in FIG. The dividing surface of the lower half and upper half wafers WF1, WF2 or the plurality of chips CP may be ground by a grinding means 90 such as a laser irradiation device or etching, and then ground to a predetermined thickness of 30 μm or 50 μm (grinding) Process).
　第１支持手段２０は、ウエハＷＦを接着剤やメカチャック等の支持部材でウエハＷＦを支持する構成でもよい。
　第１支持手段２０は、移動することなく改質層形成手段３０が移動して改質層１１を形成してもよいし、それら両方が移動して改質層１１を形成してもよい。
　第１支持手段２０は、回路ＣＡが形成されていない面からウエハＷＦを支持してもよい。 The first support means 20 may be configured to support the wafer WF with a support member such as an adhesive or a mechanical chuck.
The first support means 20 may move to form the modified layer 11 by moving the modified layer forming means 30 without moving, or both may move to form the modified layer 11.
The first support means 20 may support the wafer WF from the surface where the circuit CA is not formed.
　レーザ照射装置３１は、ウエハＷＦの直径に応じて帯状レーザ光３１ＡのＹ軸方向の幅を変えることができる。
　レーザ照射装置３１は、ウエハＷＦとの相対移動によってレーザ照射位置におけるウエハＷＦのＹ軸方向の幅が変化する場合、当該幅の変化に応じて帯状レーザ光３１ＡのＹ軸方向の幅を変更させるＹ軸方向照射領域変更手段を有してもよい。
　改質層形成手段３０の代わりに、図８に示すように、駆動機器としてのリニアモータ１０１と、リニアモータ１０１のスライダ１０１Ａに支持され、Ｘ軸方向に延びた帯状レーザ光１０２Ａを照射するレーザ照射装置１０２を備えた改質層形成手段１００を採用してもよい。レーザ照射装置１０２も、ウエハＷＦの内部における所定の位置に焦点を合わせ、当該焦点とされた位置を脆弱にすることができる。この場合、第１支持手段２０がリニアモータ２１を駆動し、第１支持プレート２２を間欠送りする。そして、第１支持プレート２２が停止中に、改質層形成手段１００がリニアモータ１０１を駆動し、レーザ照射装置１０２をＹ軸方向に移動させてＸ軸方向に所定の幅を有する改質層１１を形成する。その後、第１支持手段２０がリニアモータ２１を駆動し、帯状レーザ光１０２ＡのＸ軸方向の幅分第１支持プレート２２を右方に移動させて停止する。次いで、改質層形成手段１００がリニアモータ１０１を駆動し、レーザ照射装置１０２をＹ軸方向に移動させてＸ軸方向に所定の幅を有する改質層１１を形成し、以降同様の動作が繰り返される。なお、レーザ照射装置１０２における帯状レーザ光１０２ＡのＸ軸方向の幅をウエハＷＦの直径よりも大きくし、当該レーザ照射装置１０２をＹ軸方向に１回または２回以上移動させて改質層１１を形成するようにしてもよい。このとき、レーザ照射装置１０２は、ウエハＷＦとの相対移動によってレーザ照射位置におけるウエハＷＦのＸ軸方向の幅が変化する場合、当該幅の変化に応じて帯状レーザ光１０２ＡのＸ軸方向の幅を変更させるＸ軸方向照射領域変更手段を有してもよい。
　改質層形成手段３０は、回路ＣＡが形成された面側から改質層１１を形成してもよいし、ウエハＷＦの両面側から改質層１１を形成してもよい。 The laser irradiation device 31 can change the width in the Y-axis direction of the strip-shaped laser light 31A according to the diameter of the wafer WF.
When the width in the Y-axis direction of the wafer WF at the laser irradiation position changes due to relative movement with the wafer WF, the laser irradiation device 31 changes the width in the Y-axis direction of the strip-shaped laser light 31A according to the change in the width. You may have a Y-axis direction irradiation area change means.
As shown in FIG. 8, instead of the modified layer forming means 30, a laser that irradiates a belt-like laser beam 102 </ b> A that is supported by a linear motor 101 as a driving device and a slider 101 </ b> A of the linear motor 101 and extends in the X axis direction You may employ | adopt the modified layer formation means 100 provided with the irradiation apparatus 102. FIG. The laser irradiation apparatus 102 can also focus on a predetermined position inside the wafer WF and make the focused position fragile. In this case, the first support means 20 drives the linear motor 21 and intermittently feeds the first support plate 22. Then, while the first support plate 22 is stopped, the modified layer forming means 100 drives the linear motor 101 to move the laser irradiation device 102 in the Y-axis direction and have a predetermined width in the X-axis direction. 11 is formed. Thereafter, the first support means 20 drives the linear motor 21 to move the first support plate 22 to the right by the width of the belt-like laser beam 102A in the X-axis direction and stop. Next, the modified layer forming means 100 drives the linear motor 101 to move the laser irradiation device 102 in the Y-axis direction to form the modified layer 11 having a predetermined width in the X-axis direction. Repeated. Note that the width in the X-axis direction of the belt-shaped laser beam 102A in the laser irradiation apparatus 102 is made larger than the diameter of the wafer WF, and the laser irradiation apparatus 102 is moved once or twice in the Y-axis direction to modify the modified layer 11. May be formed. At this time, when the width in the X-axis direction of the wafer WF at the laser irradiation position changes due to relative movement with the wafer WF, the laser irradiation apparatus 102 changes the width in the X-axis direction of the belt-shaped laser light 102A in accordance with the change in the width. X axis direction irradiation area changing means for changing
The modified layer forming means 30 may form the modified layer 11 from the side where the circuit CA is formed, or may form the modified layer 11 from both sides of the wafer WF.
　第２支持手段４０は、ウエハＷＦを接着材やメカチャック等の支持部材でウエハＷＦを支持する構成でもよい。 The second support means 40 may be configured to support the wafer WF with a support member such as an adhesive or a mechanical chuck.
　分割手段５０は、振動付与手段５２を備えていなくてもよい。
　分割手段５０は、第２支持プレート４２を回転させることなく、第１支持プレート２２を左方に移動させるか、第２支持プレート４２を右方に移動させるか、それら両方を離れる方向に移動させるかしてウエハＷＦを分割してもよい。
　分割手段５０は、第２支持プレート４２を回転させることなく、第１支持プレート２２を回転させてウエハＷＦを分割してもよいし、それら両方を反対方向に回転させたり、それら両方を同じ方向であっても回転量を異ならせたりしてウエハＷＦを分割してもよい。
　分割手段５０は、第２支持プレート４２を回転させることなく、振動付与手段５２を駆動してウエハＷＦを分割してもよい。
　分割手段５０は、ウエハＷＦを分割できる限りにおいて、リニアモータ５１、振動付与手段５２および直動回動モータ４１における回動部の内、少なくとも１つが設けられていればよい。 The dividing unit 50 may not include the vibration applying unit 52.
The dividing means 50 moves the first support plate 22 to the left, moves the second support plate 42 to the right, or moves both of them away from each other without rotating the second support plate 42. Thus, the wafer WF may be divided.
The dividing means 50 may rotate the first support plate 22 without rotating the second support plate 42 to divide the wafer WF, rotate both of them in the opposite direction, or both of them in the same direction. However, the wafer WF may be divided by varying the rotation amount.
The dividing unit 50 may divide the wafer WF by driving the vibration applying unit 52 without rotating the second support plate 42.
As long as the wafer WF can be divided, the dividing unit 50 may be provided with at least one of the rotating portions of the linear motor 51, the vibration applying unit 52, and the linear motion rotating motor 41.
　板状部材としては、半導体ウエハ以外に、例えば、回路基板、ベース基板、リードフレーム、ガラス板、鋼板、陶器、木板または樹脂板等、任意の形態の部材や物品等でよく、何ら限定されるものではない。従って、個片体も、それら任意の形態の部材や物品等から切断されたものでよく、何ら限定されるものではない。ウエハＷＦは、円盤状のシリコン半導体ウエハ、ＳｉＣ（シリコンカーバイド）ウエハ、サファイアウエハ、化合物半導体ウエハなどが例示できる。化合物半導体ウエハは、例えばＧａＰ（リン化ガリウム）ウエハ、ＧａＡ（ヒ化ガリウム）ウエハ、ＩｎＰ（リン化インジウムガリウム）ウエハ、ＧａＮ（窒化ガリウム）ウエハ等が挙げられる。
　回路ＣＡはどのようなものでもよく、例えば回路ＣＡが、貫通電極を有する（あるいは貫通電極のみを有する）ものでもよい。この場合、貫通電極を埋め込む工程を設け、上記分割工程において当該貫通電極を埋め込んだウエハＷＦを厚み内で２分割して貫通電極付きの複数のウエハを形成することができる。
　ウエハＷＦは、７２５μｍ、６２５μｍ等どんな厚みでもよいし、３００ｍｍ、４５０ｍｍ等どんな直径でもよい。
　ウエハＷＦの形状は、円形、Ｄ型、楕円形、四角形、その他の多角形等どんな形でもよい。
　ウエハＷＦは、少なくとも一方の面に予め回路ＣＡが形成させていてもよいし、両面とも回路ＣＡが形成されていなくてもよい。
ウエハＷＦに形成される回路は、一方の面と他方の面とで大きさやパターンが異なっていてもよい。
　ウエハＷＦ少なくとも一方の面に表面保護部材が積層されていてもよいし、両面とも表面保護部材が積層されていなくてもよい。
　板状部材の分割装置１０は、２分割されたウエハＷＦに、さらに改質層１１を形成して当該ウエハＷＦを３分割以上に分割してもよい。 As the plate-like member, in addition to a semiconductor wafer, for example, a circuit board, a base board, a lead frame, a glass plate, a steel plate, ceramics, a wooden plate, or a resin plate may be used. It is not a thing. Therefore, the individual piece may be cut from any member or article in any form, and is not limited at all. Examples of the wafer WF include a disk-shaped silicon semiconductor wafer, a SiC (silicon carbide) wafer, a sapphire wafer, and a compound semiconductor wafer. Examples of the compound semiconductor wafer include a GaP (gallium phosphide) wafer, a GaA (gallium arsenide) wafer, an InP (indium gallium phosphide) wafer, and a GaN (gallium nitride) wafer.
The circuit CA may be anything, for example, the circuit CA may have a through electrode (or only have a through electrode). In this case, a step of embedding the through electrode can be provided, and the wafer WF in which the through electrode is embedded in the dividing step can be divided into two within the thickness to form a plurality of wafers with the through electrode.
The wafer WF may have any thickness such as 725 μm and 625 μm, and may have any diameter such as 300 mm and 450 mm.
The shape of the wafer WF may be any shape such as a circle, a D shape, an ellipse, a rectangle, and other polygons.
The wafer WF may have the circuit CA formed in advance on at least one surface thereof, or the circuit CA may not be formed on both surfaces.
The circuit formed on the wafer WF may have a different size and pattern on one surface and the other surface.
The surface protection member may be laminated on at least one surface of the wafer WF, or the surface protection member may not be laminated on both surfaces.
The plate-shaped member dividing apparatus 10 may further form the modified layer 11 on the two-divided wafer WF to divide the wafer WF into three or more.
　前記実施形態における駆動機器は、回動モータ、直動モータ、リニアモータ、単軸ロボット、多関節ロボット等の電動機器、エアシリンダ、油圧シリンダ、ロッドレスシリンダおよびロータリシリンダ等のアクチュエータ等を採用することができる上、それらを直接的又は間接的に組み合せたものを採用することもできる（実施形態で例示したものと重複するものもある）。 The drive device in the embodiment employs an electric device such as a rotation motor, a linear motion motor, a linear motor, a single-axis robot, and an articulated robot, an actuator such as an air cylinder, a hydraulic cylinder, a rodless cylinder, and a rotary cylinder. In addition, it is possible to adopt a combination of them directly or indirectly (some of them overlap with those exemplified in the embodiment).
　１０　板状部材の分割装置
　１１　改質層
　１２　改質ライン
　２０　第１支持手段
　３０、１００　改質層形成手段
　４０　第２支持手段
　５０　分割手段
　ＷＦ　半導体ウエハ（板状部材）
　ＣＡ　回路（造形物）
　ＣＰ　半導体チップ（個片体） DESCRIPTION OF SYMBOLS 10 Plate-like member dividing device 11 Modified layer 12 Modified line 20 First support means 30, 100 Modified layer forming means 40 Second support means 50 Dividing means WF Semiconductor wafer (plate-like member)
CA circuit (molded article)
CP semiconductor chip (single piece)

Claims (5)

  1. 　板状部材の一方の面を支持する第１支持手段と、
    　前記板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成する改質層形成手段と、
    　前記板状部材の他方の面を支持する第２支持手段と、
    　前記第１支持手段および前記第２支持手段を相対移動させて前記改質層に沿って前記板状部材を複数に分割する分割手段とを備えていることを特徴とする板状部材の分割装置。     First support means for supporting one surface of the plate-like member;
    A modified layer forming means for forming a modified layer in which the plate member becomes brittle along one surface or the other surface of the plate member;
    Second support means for supporting the other surface of the plate-like member;
    A plate-like member splitting device, comprising: a splitting device that splits the plate-like member into a plurality of pieces along the modified layer by relatively moving the first support means and the second support means. .
  2. 　板状部材の一方の面または他方の面に沿って当該板状部材が脆弱になる改質層を形成する改質層形成工程と、
    　前記改質層に沿って前記板状部材を複数に分割する分割工程とを有していることを特徴とする板状部材の分割方法。     A modified layer forming step of forming a modified layer in which the plate member becomes brittle along one surface or the other surface of the plate member;
    And a dividing step of dividing the plate-like member into a plurality along the modified layer.
  3. 　前記板状部材の少なくとも一方の面に造形物を形成する造形物形成工程を有していることを特徴とする請求項２に記載の板状部材の分割方法。 3. The plate member dividing method according to claim 2, further comprising a formed object forming step of forming a formed object on at least one surface of the plate member.
  4. 　前記造形物の周囲に沿って前記板状部材が脆弱になる改質ラインを形成する改質ライン形成工程を有していることを特徴とする請求項３に記載の板状部材の分割方法。 4. The plate member dividing method according to claim 3, further comprising a reforming line forming step of forming a reforming line in which the plate member becomes brittle along the periphery of the modeled article.
  5. 　前記造形物の周囲に沿って前記板状部材を切断し、複数の個片体を形成する個片化工程を有していることを特徴とする請求項３または請求項４に記載の板状部材の分割方法。
     
          The plate-shaped member according to claim 3 or 4, further comprising an individualizing step of cutting the plate-shaped member along the periphery of the modeled object to form a plurality of individual pieces. Method of dividing the member.

PCT/JP2016/051816 2016-01-22 2016-01-22 Dividing device for plate shaped member and dividing method for plate shaped member WO2017126098A1 (en)

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JP2011077219A (en) * 2009-09-30 2011-04-14 Disco Abrasive Syst Ltd Method for processing wafer
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