WO2017124718A1

WO2017124718A1 - Nano-generator and manufacturing method therefor

Info

Publication number: WO2017124718A1
Application number: PCT/CN2016/091551
Authority: WO
Inventors: 李军
Original assignee: 中兴通讯股份有限公司
Priority date: 2016-01-19
Filing date: 2016-07-25
Publication date: 2017-07-27
Also published as: CN106992247A; CN106992247B

Abstract

Provided are a nano-generator and a manufacturing method therefor. The nano-generator comprises: a positive electrode (11) and a negative electrode (12). The negative electrode (12) is used for forming a nested structure with the positive electrode (11), wherein the positive electrode (11) is an electrode formed after forming a zinc oxide nano-rod array on a silicon substrate, and the negative electrode (12) is an electrode formed after forming a zinc oxide nano-needle array on a zinc substrate.

Description

Nano generator and manufacturing method thereof

Technical field

The present application relates to, but is not limited to, microelectronic technology, and more particularly to a nanogenerator and a method of fabricating the same.

Background technique

Battery life is one of the important factors for users to purchase mobile terminals such as smart phones. At present, mobile terminal manufacturers usually use large-capacity batteries or fast charging technology to solve battery life problems.

With the development of modern microelectronics technology, the miniaturization, intelligence and high integration of microelectronic devices have put forward nanometer requirements for the materials involved. Moreover, the unique properties of nanomaterials, such as small size effects, quantum size effects, surface effects, and macroscopic quantum tunneling effects, make them unique in their catalysis, electrical, optical, magnetic, and mechanical properties. nature.

Summary of the invention

The following is an overview of the topics detailed in this document. This Summary is not intended to limit the scope of the claims.

A nanogenerator comprising:

Positive electrode.

a negative electrode for forming a nested structure with the positive electrode.

Wherein, the positive electrode is an electrode formed after forming a zinc oxide nanorod array on a silicon substrate; and the negative electrode is an electrode formed after forming a zinc oxide nanoneedle array on a zinc substrate.

Optionally, the silicon substrate in the positive electrode is a P-type semiconductor material, the zinc oxide nanorod array is an N-type semiconductor material; and the contact region of the silicon substrate and the zinc oxide nanorod array in the positive electrode is formed. There is a PN heterojunction.

Optionally, the nanogenerator further includes a first lead, a second lead, and a package; the first lead and the second lead are correspondingly connected to the positive electrode and the negative electrode.

The package is configured to sleeve the positive electrode and the negative electrode.

Optionally, the zinc oxide nanoneedle array has a length of 5-10 micrometers in the zinc oxide nanoneedle array. The diameter is 200-800 nm.

Optionally, the zinc oxide nanorods in the zinc oxide nanorod array have a length of 8-12 microns and a diameter of 100-200 nm.

Optionally, the positive electrode and the negative electrode are both formed by hydrothermal method.

A method of manufacturing a nanogenerator, comprising:

A zinc oxide nanoneedle array is formed on a zinc substrate.

A zinc oxide nanorod array is formed on a silicon substrate.

The zinc substrate on which the zinc oxide nanoneedle array is formed is set as a negative electrode, and the silicon substrate on which the zinc oxide nanorod array is formed is set as a positive electrode, and the zinc oxide nanoneedle array is formed into the zinc oxide nanorod array. Set of structures.

Optionally, the method further includes:

The first lead and the second lead are connected to the positive electrode and the negative electrode.

A package is sleeved on the positive electrode and the negative electrode.

Optionally, forming the zinc oxide nanoneedle array on the zinc substrate comprises:

A zinc oxide nanoneedle array is formed on a zinc substrate by hydrothermal method.

Optionally, forming a zinc oxide nanorod array on the silicon substrate, comprising:

A zinc oxide nanorod array is formed on a silicon substrate by a hydrothermal method.

Optionally, the zinc oxide nanoneedle in the zinc oxide nanoneedle array has a length of 5-10 microns and a diameter of 200-800 nm.

A computer readable storage medium storing computer executable instructions that, when executed by a processor, implement the method of fabricating the nanogenerator.

The nano-generator and the manufacturing method thereof according to the embodiments of the invention can convert the mechanical energy existing in the working environment into electric energy, realize the conversion of the sound vibration energy to the mechanical energy and then to the electric energy, thereby realizing that the external power source is not needed. The purpose of continuous work has laid the foundation for the application of large-scale nano-generators.

BRIEF abstract

1 is a schematic structural view of a nano-generator according to an embodiment of the present invention;

2 is an energy band diagram of a P-Si/N-ZnO heterojunction according to an embodiment of the present invention;

3 is a schematic diagram of a power generation principle of a nano-generator having a P-Si/N-ZnO heterojunction according to an embodiment of the present invention;

4 is a schematic flow chart showing the implementation of a method for manufacturing a nano-generator according to an embodiment of the present invention.

Embodiments of the invention

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the features of the embodiments and the embodiments in the present application can be combined with each other without conflict.

With the help of atomic force microscopy, the vertical nanogenerator was invented using the unique properties of vertical structure zinc oxide (ZnO) nanorods; the working principle of the vertical nanogenerator is: zinc oxide (ZnO) nanorods The piezoelectric effect causes a strain field to be generated by the lateral force of the AFM (Atomic Force Microscope) probe, and the polarized charge is generated by the stretched side and the compressed side of the ZnO nanorod to form a potential difference. The stretched surface is a positive potential, and the compressed surface is a negative potential; at the same time, since the ZnO nanorod has semiconductor characteristics, the ZnO nanorod can form a Schottky contact with the metal probe, that is, the AFM probe, that is, when the AFM probe When the needle is in contact with the ZnO nanorod by the stretched surface, it is equivalent to a reverse biased Schottky diode, and the piezoelectric charge accumulates on the ZnO nanorod; when the AFM probe is in contact with the ZnO nanorod by the compressed surface, it is equivalent to a positive A biased Schottky diode, such that, driven by a positive piezoelectric voltage, electrons flow from the ZnO nanorods to the AFM probe to form a current.

Using the working principle of the above-mentioned vertical nano-generator, a DC piezoelectric nano-electric power generation device is invented, which uses a vertical substrate ZnO nanorod array as a piezoelectric material, that is, a vertical substrate. ZnO nanorod array as the lower electrode (ie positive electrode) will be used A nano-electrode of a zirconium structure of a metal platinum (Pt) is deposited as an upper electrode (ie, a negative electrode), and finally the lower electrode and the positive electrode are encapsulated by a polymer to finally form a DC piezoelectric nano-electric power generation device. Under the driving of the external ultrasonic wave, the lower electrode corresponding to the ZnO nanorod will vibrate or bend, so that a Schottky contact is formed between the metal electrode, that is, the upper electrode and the lower electrode of the semiconductor ZnO nanorod. Outputs unidirectional piezoelectric energy.

Using the working principle of the above-mentioned vertical nano-generator, a soft fiber-nanobar composite structure piezoelectric nano-power generation device was invented; the fiber-nano-bar composite structure piezoelectric nano-power generation device has two surfaces grown with ZnO nanometers. The filaments of the rod are entangled, one of which is plated with a gold film, so that when the two surfaces grow relative to each other with ZnO nanorods, the ZnO nanorods interact, and the electrical energy is realized by the piezoelectric effect. Output; here, the output current peak is 5pA and the output voltage peaks at 1mV.

The manufacturing process of the nano-generator described above may require Pt plating on the nano-scale electrode or gold (Au) on the ZnO nano-array, and the process of plating Pt and gold-plating will cause environmental pollution and cost. High, the preparation process is difficult to control, and as a result, the practical application of the nanogenerator cannot be achieved.

In order to solve the above problems, an embodiment of the present invention provides an environment-friendly nano-generator and a manufacturing method thereof. Here, in order to understand the features and technical contents of the embodiments of the present invention in more detail, the embodiments of the present invention are described below with reference to the accompanying drawings. The implementations are described in detail, and the drawings are for illustrative purposes only and are not intended to limit the embodiments of the invention.

Embodiment 1

The embodiment of the invention provides an environment-friendly nano-generator; the embodiment of the invention realizes a novel nano-generator by using a heterojunction rectification effect and a semiconductor ZnO piezoelectric effect, and has environmental friendliness and low cost. , the preparation process is simple and so on. The nanogenerator comprises an electrode formed with a ZnO nanoneedle array on a Zn substrate, an electrode of a ZnO nanorod array formed on a silicon (Si) substrate, a package and a lead. Wherein, an electrode having a ZnO nanoneedle array formed on a Zn substrate is used as an upper electrode of the nanogenerator, that is, a negative electrode; an electrode having a ZnO nanorod array formed on the Si substrate as a lower electrode of the nanogenerator, that is, a positive electrode The upper and lower electrodes of the nano-generator are respectively connected by different leads, and the ZnO nano-needle array and the ZnO nano-rod array form a nested structure, and the outer circumference is sleeved with a package. Here, the sound energy causes the ZnO nanorod array on the Si substrate to be transported relative to each other. At this time, the ZnO nanoneedle array with stronger hardness on the Zn substrate acts like an AFM probe, and the polarized charge is generated on the stretched side and the compressed side of the ZnO nanorod array to form a potential difference, and is The tensile surface is a positive potential and the compressed surface is a negative potential; since the ZnO nanorod has semiconductor characteristics, the Si substrate and the ZnO nanorod semiconductor have a heterojunction finishing effect, which is equivalent to a reverse biased Schottky diode. Driven by the positive piezoelectric voltage, electrons flow from the ZnO nanoneedle array to the ZnO nanorod array to enter the corresponding electrode of the Si substrate to form a current, thereby realizing the conversion of sound vibration energy to mechanical energy to electrical energy, thereby realizing the situation without external power supply. Next, the purpose of continuous operation of the nano-generator by sound vibration.

Optionally, as shown in FIG. 1 , the nano-generator according to the embodiment of the present invention includes: a positive electrode 11; a negative electrode 12 for forming a nested structure with the positive electrode 11; wherein the positive electrode 11 An electrode formed after forming a zinc oxide nanorod array on a silicon substrate; the negative electrode 12 is an electrode formed after forming a zinc oxide nanoneedle array on a zinc substrate. Here, the positive electrode 11 and the negative electrode 12 form a nested structure, that is, the zinc oxide nanoneedle array corresponding to the negative electrode forms a nested structure with the zinc oxide nanorod array corresponding to the positive electrode; alternatively, the positive electrode The silicon substrate in 11 is a P-type semiconductor material, and the zinc oxide nanorod array is an N-type semiconductor material; and a contact region of the silicon substrate and the zinc oxide nanorod array in the positive electrode is formed with a PN heterojunction.

Optionally, the nanogenerator further includes a first lead and a second lead; the first lead and the second lead are correspondingly connected to the positive electrode and the negative electrode; that is, the positive electrode and the negative electrode Each of the nano-generators further includes a package member 13 , the package member 13 is sleeved with the positive electrode and the negative electrode; here, the package member 13 can be For epoxy resin.

Optionally, the zinc oxide nanoneedle array has a length of 5-10 micrometers and a diameter of 200-800 nm; and the zinc oxide nanorods have a length of 8-12 micrometers in diameter. 100-200 nm.

In order to make the preparation process of the nano-generator have the advantages of environmental friendliness, low cost, simple preparation process, etc., both the positive electrode and the negative electrode described in this embodiment are formed by hydrothermal method; that is, the invention EXAMPLES A zinc oxide nanorod array was formed on a silicon substrate by a hydrothermal method, and a zinc oxide nanoneedle array was formed on a zinc substrate by a hydrothermal method.

The working principle of the embodiment of the present invention will be described in detail below with reference to the accompanying drawings:

In the nanogenerator of the embodiment, the vibration of the sound can cause relative movement of the ZnO nanorod array on the silicon substrate, and the ZnO nanoneedle in the ZnO nanoneedle array on the zinc substrate with stronger hardness acts like AFM. The action of the probe is such that a polarized charge is generated on the stretched side and the compressed side of the ZnO nanorod in the ZnO nanorod array to form a potential difference, the stretched surface is a positive potential, and the compressed surface is a negative potential; here, Since the Si substrate is a P-type semiconductor material, the ZnO nanorods in the ZnO nanorod array are N-type semiconductor materials, so the Si substrate is in contact with the ZnO nanorod semiconductor to form a PN heterojunction, that is, P-Si/N-ZnO is different. The energy band diagram of the P-ZnO/N-ZnO heterojunction established by Anderson model; as shown in Fig. 2; the electron affinity of silicon is 4.05eV, the band gap is 1.12eV; the electron affinity of ZnO Can be 4.35 eV, the forbidden band is 3.37 eV; the conduction band of the P-Si/N-ZnO heterojunction is 0.3 eV, and the valence band is 2.55 eV; since the valence band is significantly larger than the conduction band, The carrier transport of the P-Si/N-ZnO heterojunction interface can only be achieved by free electrons, the P-Si/N-ZnO heterojunction It is determined by the electrical properties of conduction band electrons. Since the carrier concentration of the P-type semiconductor material silicon is greater than about two orders of magnitude of the N-type semiconductor material ZnO nanorods, the dissipative region of the P-Si/N-ZnO heterojunction interface is mainly derived from the ZnO region, That is, the built-in electric field of the P-Si/N-ZnO heterojunction is mainly derived from the ZnO region; as can be seen from the energy band structure of the P-Si/N-ZnO heterojunction, the P The existence barrier of the -Si/N-ZnO heterojunction will affect the conduction of conduction band electrons, and its rectification effect is equivalent to a reverse biased Schottky diode.

As shown in Fig. 3, under the driving of the positive piezoelectric voltage, whether the ZnO nanoneedle moves to the left or to the right relative to the ZnO nanorod, electrons flow from the ZnO nanoneedle to the ZnO nanorod into the corresponding positive electrode of the silicon substrate. Further, a current is formed in the loop; the P-Si/N-ZnO heterojunction barrier effectively prevents electrons from being transmitted from the silicon substrate to the ZnO nanorods, and thus becomes a key factor for maintaining the piezoelectric potential and the unidirectional current. .

For a single ZnO nanorod, the current generation process is transient, but when a large number of ZnO nanorods in the ZnO nanorod array produce a current output, the current in the loop is a superposition of the current generated by all ZnO nanorods. Since the currents output by each working ZnO nanorod have the same direction, the generated currents are all positively superimposed, so that a stable and continuous current signal can be output.

In this way, the nano-generator according to the embodiment of the present invention can convert the mechanical energy existing in the working environment into electrical energy, and convert the sound vibration to the mechanical energy and then to the electrical energy, thereby achieving no need. The purpose of continuous operation in the case of external power supply lays the foundation for the application of large-scale nano-generators. At the same time, it also provides an implementation method for charging the terminal with sound.

Moreover, both the positive electrode and the negative electrode in the nano-generator according to the embodiments of the present invention are prepared by hydrothermal method, so compared with the preparation process of the related nano-generator, the embodiment of the present invention The nano-generator has the advantages of environmental friendliness, low cost and simple preparation process, thus laying a foundation for large-scale application.

Embodiment 2

The embodiment of the invention provides a method for manufacturing a nano-generator according to the first embodiment; as shown in FIG. 4, the method includes steps 401-403:

Step 401: Forming a zinc oxide nanoneedle array on a zinc substrate.

Step 402: Forming a zinc oxide nanorod array on a silicon substrate.

Step 403: The zinc substrate formed with the zinc oxide nanoneedle array is set as a negative electrode, and the silicon substrate on which the zinc oxide nanorod array is formed is set as a positive electrode, and the zinc oxide nanoneedle array and the zinc oxide nanorod are arranged. The array forms a nested structure.

Here, the silicon substrate in the positive electrode is a P-type semiconductor material, the zinc oxide nanorod array is an N-type semiconductor material; and a contact region of the silicon substrate and the zinc oxide nanorod array in the positive electrode is formed with a PN Heterojunction.

In a practical application, the method further includes: connecting the first lead and the second lead to the positive electrode and the negative electrode; that is, the positive electrode and the negative electrode are respectively connected by different leads; Optionally, the package is sleeved on the positive electrode and the negative electrode; wherein the package may be an epoxy resin, and thus, the structure shown in FIG. 1 is formed.

In order to make the preparation process of the nano-generator have the advantages of environmental friendliness, low cost, simple preparation process, etc., both the positive electrode and the negative electrode described in this embodiment are formed by hydrothermal method; that is, the invention EXAMPLES A zinc oxide nanoneedle array was formed on a zinc substrate by a hydrothermal method, and a zinc oxide nanorod array was formed on a silicon substrate by a hydrothermal method.

Optionally, the step of preparing the ZnO nanoneedle array on the zinc substrate by hydrothermal method comprises steps 1-5:

Step 1: Take a piece of zinc as a zinc substrate, sequentially using acetone with a purity of 99.5%, and the purity is Ultrasonic cleaning of zinc tablets with 99.7% absolute ethanol for 10-20 minutes.

Step 2: Measure 1-3 ml of 99.5% pure n-butylamine solution, dilute the n-butylamine solution to 70-100 ml with deionized water, and dilute the hydrothermal method to form zinc oxide on the silicon substrate. The nanorod array was placed in a 50 ml stainless steel autoclave with a Teflon liner.

Step 3: The ultrasonically cleaned zinc sheet is immersed in step 2 to obtain a diluted n-butylamine solution, and the autoclave is sealed.

Step 4: The autoclave is placed in an oven and reacted at a temperature of 70-120 ° C for 2-8 hours.

Step 5: After the reaction is completed, and the autoclave is naturally cooled, the zinc flakes are taken out, and the zinc flakes are sequentially washed with deionized water and absolute ethanol; after drying in air, the ZnO nanoneedle array can be obtained on the surface of the zinc flakes. That is, a zinc substrate on which a ZnO nanoneedle array is formed is obtained.

Here, the ZnO nanoneedle array in the embodiment is vertically and directly formed on the Zn substrate, and the length of the single ZnO nanoneedle in the ZnO nanoneedle array is about 5-10 microns, and the average diameter is 200-800 nm. Left and right; so the ZnO nanoneedle array is very hard and not easily bent.

In practical applications, a gold (Au) film can be deposited by vacuum evaporation coating on a ZnO nanoneedle array prepared on a zinc substrate, so that the single ZnO nanoneedle has stronger hardness and better conductivity. The process is as follows: in the evaporation coating equipment, a refractory metal such as tungsten or tantalum is made into a boat foil or a filament, placed on a crucible, and Au (as an evaporation source) is placed on a boat foil or a filament, ZnO nanometer. The needle array substrate is placed in front of the crucible; after the evaporation coating device is pumped to a high vacuum, the crucible is heated to evaporate the Au, and the atoms or molecules of the evaporated substance are deposited on the surface of the ZnO nanoneedle array substrate by condensation, by rotating the ZnO nanometer. The needle array can obtain a gold-coated ZnO nanoneedle array with uniform film thickness.

Optionally, the step of preparing the ZnO nanorod array on the Si substrate by hydrothermal method comprises steps 11-18:

Step 11: using silicon wafer (111) as a substrate, placing it in acetone and carbon tetrachloride solution in a volume ratio of 1:1, ultrasonically cleaning for 10-20 minutes, and repeating washing twice to remove grease; The water is repeatedly washed with anhydrous ethanol to remove an organic solvent such as acetone or carbon tetrachloride.

Step 12: Select 0.35mol/L (3.8801g) of zinc acetate (Zn(CH ₃ COO) ₂ ·2H ₂ O) or ZnCl2 dissolved in 50mL of ethylene glycol methyl ether (C ₃ H ₈ O ₂ ), and then use The pipette was added dropwise 1 mL of ethanolamine in ethylene glycol methyl ether, and the mixture was stirred at a constant temperature of 60 ° C for 2-6 hours in a water bath, and then aged in a 40-80 ° C oven for 48-72 hours to change the colloidal solution from colorless transparent to light. yellow.

Step 13: The colloidal solution obtained in the step 12 is uniformly spin-coated on the surface of the silicon substrate. When the gel is homogenized, the cleaned and dried silicon substrate is gently placed on the rotor of the mixing table, and when the rotor is at 300 r/min. When rotating, the colloidal solution obtained in the step 12 was dropped at the center thereof, and then rotated at a speed of 2000 r/min and 3000 r/min for 5-10 seconds to uniformly adhere the colloidal solution to the surface of the substrate.

Step 14: After the homogenization is completed, the silicon substrate is placed in a 100-130 ° C oven for heat treatment for 10-20 min to continue the hydrolysis polycondensation reaction, thereby evaporating the solvent, increasing the viscosity, and continuously changing the sol to the gel.

Step 15: The spin-coated silicon substrate of step 14 is placed in a muffle furnace at a high temperature of 500-700 ° C for 1-4 h to form a ZnO thin film sample on a silicon substrate.

Step 16: The silicon substrate spin-coated with the ZnO thin film sample described in the step 15 was vertically inserted into a susceptor made of polytetrafluoroethylene, and placed in a high pressure reaction vessel by using tweezers.

Step 17: separately arranging a mixture of a concentration of 0.025-0.1 mol/L and a concentration ratio of 1:1 zinc nitrate and a hexamethylenetetramine solution, and uniformly dissolving the ZnO thin film sample by stirring with a constant temperature magnetic stirrer. In order to obtain a transparent, uniform liquid.

Step 8: Mixing the liquids configured in step 17 and transferring them to a 70% high pressure autoclave for sealing, placing them in an electric blast drying oven, adjusting the reaction temperature to 80-100 ° C, and reacting for 1-4 h. The ZnO thin film sample was sufficiently reacted with the liquid obtained in the step 17 after the mixing. After the reaction is completed, it is naturally cooled to room temperature; the silicon substrate is taken out, and the surface precipitate is repeatedly washed with absolute ethanol, and after drying at room temperature, an array of zinc oxide nanorods can be obtained on the surface of the silicon substrate.

Here, in the present embodiment, the ZnO nanorod array is grown perpendicular to the silicon substrate, and the length of the single ZnO nanorods in the zinc oxide nanorod array is about 8-12 microns, and the average diameter is about 100-200 nm; The zinc oxide nanorod array has an ultra-high aspect ratio and is grown on a ZnO thin film sample, which is extremely flexible.

Thus, in the method for fabricating a nano-generator according to an embodiment of the present invention, a zinc oxide nanorod array is formed on a silicon substrate by a hydrothermal method, and a zinc oxide nanoneedle array is formed on the zinc substrate by a hydrothermal method. Therefore, the manufacturing method described in the embodiments of the present invention is environmentally friendly and low in cost. The preparation process is simple, and it is easy to mass production.

The above is only the embodiment of the present invention, but the scope of protection of the embodiment of the present invention is not limited thereto, and any person skilled in the art can easily think of it within the technical scope disclosed by the embodiment of the present invention. Variations or substitutions are intended to be included within the scope of the embodiments of the invention. Therefore, the scope of protection of the embodiments of the present invention should be determined by the scope of the claims.

Industrial applicability

The nano-generator and the manufacturing method thereof according to the embodiments of the invention can convert the mechanical energy existing in the working environment into electric energy, realize the conversion of the sound vibration energy to the mechanical energy and then to the electric energy, thereby realizing that the external power source is not needed. The purpose of continuous work has laid the foundation for the application of large-scale nano-generators. Moreover, in the method for fabricating a nano-generator according to the embodiments of the present invention, a zinc oxide nanorod array is formed on a silicon substrate by a hydrothermal method, and a zinc oxide nanoneedle array is formed on the zinc substrate by a hydrothermal method. Therefore, the manufacturing method of the embodiment of the invention has the advantages of environmental friendliness, low cost, simple preparation process, and easy mass production.

Claims

A nanogenerator comprising:

Positive electrode

a negative electrode for forming a nested structure with the positive electrode;

Wherein, the positive electrode is an electrode formed after forming a zinc oxide nanorod array on a silicon substrate; and the negative electrode is an electrode formed after forming a zinc oxide nanoneedle array on a zinc substrate.
The nanogenerator according to claim 1, wherein the silicon substrate in the positive electrode is a P-type semiconductor material, the zinc oxide nanorod array is an N-type semiconductor material; and the silicon substrate in the positive electrode A contact region of the zinc oxide nanorod array is formed with a PN heterojunction.
The nanogenerator according to claim 1 or 2, further comprising a first lead, a second lead, and a package; the first lead and the second lead are connected to the positive electrode and the negative electrode ;

The package is configured to sleeve the positive electrode and the negative electrode.
The nanogenerator according to claim 1 or 2, wherein the zinc oxide nanoneedle in the zinc oxide nanoneedle array has a length of 5 to 10 μm and a diameter of 200 to 800 nm.
The nanogenerator according to claim 1 or 2, wherein the zinc oxide nanorods in the zinc oxide nanorod array have a length of 8 to 12 μm and a diameter of 100 to 200 nm.
The nanogenerator according to claim 1 or 2, wherein the positive electrode and the negative electrode are each formed by a hydrothermal method.
A method of manufacturing a nanogenerator, the method comprising:

Forming a zinc oxide nanoneedle array on a zinc substrate;

Forming a zinc oxide nanorod array on a silicon substrate;

The zinc substrate on which the zinc oxide nanoneedle array is formed is set as a negative electrode, and the silicon substrate on which the zinc oxide nanorod array is formed is set as a positive electrode, and the zinc oxide nanoneedle array is formed into the zinc oxide nanorod array. Set of structures.
The method of manufacturing a nanogenerator according to claim 7, wherein the silicon substrate in the positive electrode is a P-type semiconductor material, and the zinc oxide nanorod array is an N-type semiconductor a material; a P-N heterojunction is formed in a contact region between the silicon substrate and the zinc oxide nanorod array in the positive electrode.
The method of manufacturing a nanogenerator according to claim 7 or 8, the method further comprising:

Connecting the first lead and the second lead to the positive electrode and the negative electrode;

A package is sleeved on the positive electrode and the negative electrode.
The method of manufacturing a nanogenerator according to claim 7 or 8, wherein the forming a zinc oxide nanoneedle array on a zinc substrate comprises:

A zinc oxide nanoneedle array is formed on a zinc substrate by hydrothermal method.
The method of manufacturing a nanogenerator according to claim 7 or 8, wherein the forming of the zinc oxide nanorod array on the silicon substrate comprises:

A zinc oxide nanorod array is formed on a silicon substrate by a hydrothermal method.
The method of manufacturing a nanogenerator according to claim 7 or 8, wherein the zinc oxide nanoneedle in the zinc oxide nanoneedle array has a length of 5 to 10 μm and a diameter of 200 to 800 nm.
The method of manufacturing a nanogenerator according to claim 7 or 8, wherein the zinc oxide nanorods in the zinc oxide nanorod array have a length of 8 to 12 μm and a diameter of 100 to 200 nm.