WO2017113127A1 - 一种基片集成波导喇叭天线 - Google Patents

一种基片集成波导喇叭天线 Download PDF

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Publication number
WO2017113127A1
WO2017113127A1 PCT/CN2015/099588 CN2015099588W WO2017113127A1 WO 2017113127 A1 WO2017113127 A1 WO 2017113127A1 CN 2015099588 W CN2015099588 W CN 2015099588W WO 2017113127 A1 WO2017113127 A1 WO 2017113127A1
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Prior art keywords
horn antenna
antenna
integrated waveguide
substrate integrated
wavelength
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PCT/CN2015/099588
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English (en)
French (fr)
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廖丹
金海焱
陆川
张力
张明
董昕宇
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电子科技大学成都研究院
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Priority to PCT/CN2015/099588 priority Critical patent/WO2017113127A1/zh
Publication of WO2017113127A1 publication Critical patent/WO2017113127A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/02—Waveguide horns

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  • the invention belongs to the technical field of microwave antennas, and more particularly to a substrate integrated waveguide horn antenna.
  • the low frequency channel Due to the widespread use of low frequency wireless communication devices, the low frequency channel is becoming more and more congested. People generally focus on the high-frequency band, and also require the structure of the RF circuit components to be compact and lightweight.
  • Substrate Integrated Waveguide is a new type of microwave transmission structure.
  • the basic principle is to form an electric wall on a dielectric substrate with adjacent metal through holes, so that it is similar to the upper and lower metal sheets.
  • Substrate integrated waveguides have attracted widespread attention due to their low cost and planar circuit structure.
  • a number of excellent microwave devices have also been developed.
  • many passive microwave devices based on substrate integrated waveguides and related technologies have appeared, such as couplers, power dividers, and antennas.
  • the horn antenna is a widely used microwave antenna, which has the advantages of simple structure, large frequency bandwidth, large power capacity, and convenient adjustment and use.
  • the substrate integrated waveguide technology and the horn antenna technology are combined to form a substrate integrated waveguide horn antenna.
  • the prior art substrate integrated waveguide horn antenna has some drawbacks:
  • the original plane electromagnetic wave is deformed into a spherical electromagnetic wave, which reduces the gain of the horn antenna, reduces the working bandwidth, and widens the antenna beam;
  • the object of the present invention is to overcome the deficiencies of the prior art and provide a substrate integrated waveguide horn antenna. In order to improve the gain of the antenna, expand the working bandwidth, reduce the antenna beam, and enhance its application in the millimeter wave band.
  • the substrate integrated waveguide horn antenna of the present invention comprises a dielectric substrate and upper and lower metal sheets adhered to the upper and lower surfaces of the dielectric substrate, and is characterized in that:
  • the upper and lower metal sheets are all isosceles trapezoidal (horn) structures of uniform size and shape, and have a set of open 1/4 wavelength open microstrip lines parallel to the two bottoms on the outer sides of the two waists, each open circuit One end of the microstrip line is connected to the waist of the upper metal plate or the lower metal piece; the lower bottom side of the upper and lower metal pieces constitute a radiation port.
  • the substrate integrated waveguide horn antenna of the present invention further includes:
  • a rectangular waveguide has one end as an input end, and the wide sides of the upper and lower sides of the other end are respectively connected to the upper bottom (short parallel sides) of the upper and lower metal sheets.
  • the object of the invention is achieved in this way.
  • the substrate integrated waveguide horn antenna of the present invention is designed on the basis of the prior art, and the upper and lower metal sheets are designed as an isosceles trapezoidal (horn) structure having the same size and shape, and a set of the outer sides of the two waists is parallel to the two bottoms.
  • An approximately 1/4 wavelength open microstrip line forms two sets of ripple.
  • an open microstrip line of approximately 1/4 wavelength is used to replace the ground via hole of the existing substrate integrated waveguide antenna, thereby reducing processing error, improving device uniformity and yield, and reducing processing difficulty, thereby making application thereof
  • the millimeter wave band becomes possible; on the other hand, the equivalent dielectric constant of both sides is gradually reduced to form a fast wave region, and the transmission phase of the quasi-TE mode electromagnetic wave is adjusted to be uniform at the radiation end of the horn antenna, thereby To achieve the purpose of improving antenna gain, expanding working bandwidth, reducing antenna beam, and improving radiation efficiency.
  • FIG. 1 is a schematic structural view of a specific embodiment of a substrate integrated waveguide horn antenna of the present invention
  • Figure 2 is a dimensional view of the substrate integrated waveguide horn antenna of Figure 1;
  • FIG. 3 is an electric field distribution diagram of the substrate integrated waveguide horn antenna shown in FIG. 1;
  • FIG. 4 is a S-parameter simulation diagram of the substrate integrated waveguide horn antenna shown in FIG. 1;
  • FIG. 5 is a 3-dimensional antenna gain pattern of the substrate integrated waveguide horn antenna shown in FIG. 1;
  • FIG. 6 is a graph showing gain curves of different radiation directions of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • FIG. 1 is a schematic structural view of a specific embodiment of a substrate integrated waveguide horn antenna of the present invention.
  • the substrate integrated waveguide horn antenna of the present invention comprises a dielectric substrate 1 and upper metal sheets 2, lower metal sheets 3 and rectangular waveguides 4 adhered to the upper and lower surfaces of the dielectric substrate.
  • a ladder-shaped impedance transformer 5 is added to the rectangular waveguide.
  • the upper metal piece 2 and the lower metal piece 3 are all isosceles trapezoidal (horn) structures having the same size and shape, and have a set and two bottoms on the outer sides of the two waists.
  • a parallel 1/4 wavelength open microstrip line 6 is parallel, and one end of each open microstrip line is connected to the waist of the upper metal plate 2 or the lower metal piece 3.
  • approximately 1/4 wavelength refers to the wavelength of the central electromagnetic wave of the operating frequency band.
  • One end of the rectangular waveguide 4 serves as an input end, and the wide sides of the upper and lower sides of the other end are respectively connected to the upper bottom (short parallel sides) of the upper metal plate 2 and the lower metal piece 3.
  • the present invention will be described in detail below by taking a ripple substrate integrated waveguide horn antenna of a 70 GHz-105 GHz operating band as an example.
  • the selection of the dielectric substrate is a key. Not only because it is the carrier of the entire horn antenna, the horn antenna needs to be generated on its surface, and more importantly, the input and output energy propagates inside it, which directly affects the gain and working bandwidth of the entire horn antenna.
  • the plate has the characteristics of low dielectric loss, good adhesion between the conduction band metal and the substrate medium, and is suitable as a dielectric substrate for the substrate integrated waveguide in the microwave frequency band.
  • the radiation surface is the size of the upper and lower metal sheets.
  • the literature D.G.Chen and K.W.Eccleston “Substrate integrated waveguide”. With corrugated wall,” in Proc. Asia - Pacific Microw. Conf., 2008 and the literature M. Abdolhamidi, A. Enayati, M. Shahabadi, and R. Faraji-Dana, "Wideband single-layer DC-decoupled substrate integrated waveguide ( SIW)-to-microstrip transition using an interdigital configuration," in Proc. Asia - Pacific Microw. Conf., 2007. This design belongs to the prior art and will not be described again here.
  • the input end of the horn antenna is designed as a "rectangular waveguide + trapezoidal waveguide", and a good standing wave loss is achieved by adjusting the width Wt and length Lt parameters of the trapezoidal waveguide input port.
  • the trapezoidal waveguide is placed as an impedance transformer in a rectangular waveguide, and its broad side is gradually reduced to a width Wt toward the rectangular waveguide.
  • the prior art practice placing a grounded metal via on the sidewall of the substrate integrated waveguide.
  • an open microstrip line of approximately 1/4 wavelength is used in place of the substrate integrated waveguide sidewall ground metal via.
  • the equivalent dielectric constant of the region is gradual, and a fast wave effect is formed in the boundary region. Further adjust the phase consistency of the electromagnetic wave to achieve the purpose of improving the antenna gain.
  • Figure 2 is a dimensional view of the substrate integrated waveguide horn antenna shown in Figure 1.
  • the parameters of the open microstrip line include the length W3, the period p, and the spacing d, which may be adjusted according to actual conditions to maximize the gain of the horn antenna.
  • the dielectric substrate is a rectangular + trapezoidal structure, and the specific parameters include the width W1 of the opening portion of the dielectric substrate, the length L2 of the opening portion of the dielectric substrate, and the overall length L1 of the dielectric substrate.
  • the width of the width input end of the rectangular waveguide is W, the length L3 of the rear end of the trapezoidal waveguide, the length Lt of the transition section, and the width Wt of the input end;
  • the width of the opening portion of the upper and lower metal sheets is W2, W4 is the distance from the open end of the open bottom microstrip line of the upper and lower metal sheets to the rectangular waveguide, and W5 is the distance from the edge of the connecting end of the dielectric substrate to the rectangular waveguide.
  • FIG. 3 is an electric field distribution diagram of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • the electromagnetic wave energy gradually propagates outward along the substrate integrated waveguide horn antenna, and the input spherical surface is gradually transformed by the 1/4 wavelength open microstrip line of the horn antenna.
  • the wave is transformed into a plane wave with the same phase, so that the radiated port of the horn antenna is made to have the same phase of the radiated plane wave, thereby improving the gain of the horn antenna and improving the radiation efficiency.
  • the ripple of the horn antenna that is, the outer edge of the open microstrip line array, has no significant energy radiation at its edges due to the switching action of the open microstrip line (open circuit is converted to a short circuit).
  • FIG. 4 is a S-parameter simulation diagram of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • the entire 20 Ghz band has a -10 dB port standing wave in the frequency range of 80-100 GHz, which indicates that the substrate integrated waveguide horn antenna of the present invention has a wide operating frequency.
  • FIG. 5 is a 3-dimensional antenna gain pattern of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • FIG. 5 is a 3-dimensional antenna gain pattern of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • the antenna has a maximum gain of 12.8 dB, which indicates a higher gain of the substrate integrated waveguide horn antenna of the present invention.
  • FIG. 6 is a graph showing gain curves of different radiation directions of the substrate integrated waveguide horn antenna shown in FIG. 1.
  • the direction of the maximum gain of the antenna is in the radiation direction of 270 degrees.
  • the substrate integrated waveguide horn opening antenna proposed by the present invention replaces the substrate integrated waveguide grounding metal through hole by using an open microstrip line of approximately 1/4 wavelength compared with the conventional substrate integrated waveguide horn opening antenna.
  • the design model is more accurate, the design process is simpler and the processing cost is lower; at the same time, the consistency and yield of the device are improved, and the processing difficulty and processing cost are reduced;
  • the substrate integrated waveguide horn open antenna proposed by the invention adopts an open microstrip line of approximately 1/4 wavelength instead of the substrate integrated waveguide grounding metal through hole, so as to construct an equivalent dielectric constant gradient region in the region, and adjust The transmission phase of the quasi-TE mode electromagnetic wave is compared with the conventional substrate integrated waveguide horn antenna.
  • the line has higher gain, wider operating bandwidth, and higher radiation efficiency.

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Abstract

本发明公开了一种基片集成波导喇叭天线，在现有技术的基础上，将上、下金属片设计为大小形状一致的等腰梯形(喇叭)结构，并在两腰的外侧设置一组与两底平行的近似1/4波长的开路微带线，构成两组纹波。这样，利用近似1/4波长的开路微带线代替现有基片集成波导天线侧壁接地通孔，一方面减少加工误差，提高器件的一致性和成品率，减少加工的难度，使得其应用于毫米波频段成为可能；另一方面使两侧区域的等效介电常数渐变变小，形成快波区域，调整准TE模电磁波的传输相位，使其在喇叭天线的辐射端保持一致，从而达到提高天线增益、拓展工作带宽、缩减天线波束、提高辐射效率的目的。

Description

一种基片集成波导喇叭天线 技术领域
本发明属于微波天线技术领域，更为具体地讲，涉及一种基片集成波导喇叭天线。
背景技术
随着现代通信技术的发展，市场对通讯设备的效率要求越来越高，也相应的引发了对宽通带、高传输效率的实时视频设备及数据传输设备的研究。
由于市场对低频无线通信设备的广泛应用，使得低频信道越来越拥堵。人们普遍把目光集中在高频波段，同时还要求射频电路组件结构要紧凑、质量轻便。
基片集成波导(Substrate Integrated Waveguide，简称SIW)是一种最新的微波传输结构，其基本原理是在介质基片上用相邻很近的金属通孔形成电壁，这样与上下金属片一起构成类似于普通波导的结构。基片集成波导凭着低廉的成本和平面的电路结构，引起人们的广泛关注。同时，一批性能优良的微波器件也被开发出来。迄今为止，已经出现了许多基于基片集成波导及其相关技术的无源微波器件，例如耦合器、功分器、和天线等
而在天线领域，喇叭天线是一种应用广泛的微波天线，其优点是结构简单、频带宽、功率容量大、调整与使用方便。
将基片集成波导技术与喇叭天线技术向结合，形成了基片集成波导喇叭天线，然而，在应用的过程中，现有技术的基片集成波导喇叭天线存在一些弊端：
1)、随着电磁波在基片集成波导喇叭天线的传输，原来的平面电磁波畸变为球面电磁波，这会降低喇叭天线的增益、缩减工作带宽、拓宽天线波束；
2)、在毫米波频段，由于电路尺寸对频率的敏感性，现有技术的基片集成波导需要的接地金属通孔，由于尺寸太小往往无法进行机械加工，因此也成为限制基片集成波导在毫米波频段喇叭天线应用的主要因素。
发明内容
本发明的目的在于克服现有技术的不足，提供一种基片集成波导喇叭天线， 以提高天线的增益、拓展工作带宽、缩减天线波束，同时，增强其在毫米波频段的应用。
为实现上述发明目的，本发明基片集成波导喇叭天线，包括介质基片以及黏附在介质基片上、下表面的上、下金属片，其特征在于：
所述的上、下金属片均为大小形状一致的等腰梯形(喇叭)结构，并在两腰的外侧均有一组与两底平行的近似1/4波长的开路微带线，每根开路微带线的一端与上金属板或下金属片的腰连接；上、下金属片的下底边构成辐射端口。
作为进一步的改进，本发明基片集成波导喇叭天线还包括：
一矩形波导，其一端作为输入端，另一端上、下侧的宽边分别与所述上、下金属片的上底(短的平行边)连接。
本发明的目的是这样实现的。
本发明基片集成波导喇叭天线，在现有技术的基础上，将上、下金属片设计为大小形状一致的等腰梯形(喇叭)结构，并在两腰的外侧设置一组与两底平行的近似1/4波长的开路微带线，构成两组纹波。这样，利用近似1/4波长的开路微带线代替现有基片集成波导天线侧壁接地通孔，一方面减少加工误差，提高器件的一致性和成品率，减少加工的难度，使得其应用于毫米波频段成为可能；另一方面使两侧区域的等效介电常数渐变变小，形成快波区域，调整准TE模电磁波的传输相位，使其在喇叭天线的辐射端保持一致，从而达到提高天线增益、拓展工作带宽、缩减天线波束、提高辐射效率的目的。
附图说明
图1是本发明基片集成波导喇叭天线一种具体实施方式的结构示意图；
图2是图1所示基片集成波导喇叭天线的尺寸图；
图3是图1所示基片集成波导喇叭天线的电场分布图；
图4是图1所示基片集成波导喇叭天线的S参数仿真图；
图5是图1所示基片集成波导喇叭天线的3维天线增益方向图；
图6是图1所示基片集成波导喇叭天线不同辐射方向的增益曲线图。
具体实施方式
下面结合附图对本发明的具体实施方式进行描述，以便本领域的技术人员 更好地理解本发明。需要特别提醒注意的是，在以下的描述中，当已知功能和设计的详细描述也许会淡化本发明的主要内容时，这些描述在这里将被忽略。
图1是本发明基片集成波导喇叭天线一种具体实施方式的结构示意图。
在本实施例中，如图1所示，本发明基片集成波导喇叭天线，包括介质基片1以及黏附在介质基片上、下表面的上金属片2、下金属片3以及矩形波导4。为了实现良好的阻抗匹配，在矩形波导中加入了一个梯形结构的阻抗变换器5。
在本实施例中，如图1所示，所述的上金属片2、下金属片3均为大小形状一致的等腰梯形(喇叭)结构，并在两腰的外侧均有一组与两底平行的近似1/4波长的开路微带线6，且每根开路微带线的一端与上金属板2或下金属片3的腰连接。在本发明中，近似1/4波长是指的工作频带的中心电磁波的波长。
矩形波导4一端作为输入端，另一端上、下侧的宽边分别与所述上金属板2、下金属片3的上底(短的平行边)连接。
在本发明中，上金属板2或下金属片3两侧的近似1/4波长的开路微带线组分别构成一个阵列即一组纹波，因此，本发明称为纹波基片集成波导喇叭天线。
下面以一个70GHz－105GHz工作频带的纹波基片集成波导喇叭天线为例，对本发明进行详细说明。
1、介质基片的选择
在本实施例中，纹波基片集成波导喇叭天线的设计中，介质基片的选取是个关键。不仅因为它是整个喇叭天线的载体，喇叭天线需要在其表面生成，更重要的是输入输出的能量在它的内部传播，它直接影响着整个喇叭天线的增益和工作带宽。
综合考虑，在本实施例中，选用厚度为1.5mm，损耗角正切tgσ＝0.0012和相对介电常数εr＝2.94的板材作为制作基片集成波导的介质基片。该板材具有介质损耗低，导带金属与基片介质黏附力好等特点，比较适合作为微波频段的基片集成波导的介质基片。
2、喇叭天线的设计
2.1、辐射面设计
根据喇叭天线工作频段和辐射模式设计辐射面即上、下金属片的尺寸，具体可以参考文献D.G.Chen and K.W.Eccleston，“Substrate integrated waveguide  with corrugated wall,”in Proc.Asia–Pacific Microw.Conf.,2008以及文献M.Abdolhamidi,A.Enayati,M.Shahabadi,and R.Faraji-Dana，“Wideband single-layer DC-decoupled substrate integrated waveguide(SIW)-to-microstrip transition using an interdigital configuration,”in Proc.Asia–Pacific Microw.Conf.,2007。该设计属于现有技术，在此不再赘述。
2.2、输入端口设计
在本实施例中，把喇叭天线的输入口端设计成“矩形波导+梯形波导”，通过调整梯形波导输入端口的宽度Wt和长度Lt参数，实现良好的驻波损耗。梯形波导作为阻抗变换器置于矩形波导中，其宽边向矩形波导方向逐步减小为宽度Wt。
2.3、增益设计
为了形成固定的边界条件，现有技术的做法：在基片集成波导侧壁放上接地金属通孔。在本发明中，采用近似1/4波长的开路微带线代替基片集成波导侧壁接地金属通孔。这样，一方面，替代金属通孔的功能；两一方面，使该区域的等效介电常数渐变，在边界区域形成快波效应。进一步调整电磁波的相位一致性，达到提高天线增益的目的。
图2是图1所示基片集成波导喇叭天线的尺寸图.
在本实施例中，如图2所示，开路微带线的参数包括长度W3、周期p和间距d，具体可以根据实际情况进行调整，使喇叭天线的增益最大。
介质基片为矩形+梯形结构，具体参数包括介质基片开口部分的宽度W1、介质基片开口部分的长度L2、介质基片整体长度L1。
矩形波导的宽度输入端宽度为W、其中的梯形波导的后端长度L3、过渡段长度Lt，输入端的宽度Wt；
上下金属片开口部分的宽度为W2，W4是上下金属片上底边开路微带线开口端距离矩形波导的距离，W5是介质基片连接端边缘距离矩形波导的距离。
在上述2.1、2.2、2.3的基础上，如图2所示，综合调整L1，L2，L3，Lt，W1，W2，W3的尺寸，使得电磁波在同一波平面上的相位一致。借助电磁场仿真软件Ansoft HFSS，在上述设计的基础上进行综合的仿真优化，设计70GHz-105GHz的喇叭开口天线，具体的参数(单位毫米)如表1所示。
L1 L2 L3 Lt W1 W2 W3
18.00 4.00 2.00 6.00 20.00 15.00 1.26
W4 W5 Wt p d h  
1.90 3.50 0.20 0.326 0.125 1.5  
表1
图3是图1所示基片集成波导喇叭天线的电场分布图。
在本实施例中，如图3所示，电磁波能量沿着基片集成波导喇叭天线逐渐向外传播，经过喇叭天线的近似1/4波长的开路微带线的变换作用，逐渐把输入的球面波变换为相位一致的平面波，从而在喇叭天线的辐射端口，使辐射的平面波相位一致，从而达到提高喇叭天线增益提高辐射效率的目的。另一方面，在喇叭天线的纹波即开路微带线阵列的外边缘，由于开路微带线的变换作用(开路变换为短路)，其边缘并没有明显的能量辐射。
图4是图1所示基片集成波导喇叭天线的S参数仿真图。
在本实例中，如图4所示，在80-100GHz频率范围内，整个20Ghz频带具有-10dB的端口驻波，这说明本发明基片集成波导喇叭天线具有宽的工作频率。
图5是图1所示基片集成波导喇叭天线的3维天线增益方向图。
在本实施例中，如图5所示，在90GHz频率处，天线具有最大增益12.8dB，这说明本发明基片集成波导喇叭天线更高的增益。
图6是图1所示基片集成波导喇叭天线不同辐射方向的增益曲线图。
在本实施例中，如图6所示，从不同方向的天线增益曲线可以看出，在80-100GHz频率范围内，天线的最大增益的方向在270度方向的辐射方。
本发明的有益效果是：
1、本发明提出的基片集成波导喇叭开口天线，与传统的基片集成波导喇叭开口天线相比，由于采用近似1/4波长的开路微带线代替基片集成波导接地金属通孔，因此其设计模型更加准确，设计过程更加简单和加工成本更为低廉；同时，提高器件的一致性和成品率，减少加工的难度和加工成本；
2、本发明提出的基片集成波导喇叭开口天线，采用近似1/4波长的开路微带线代替基片集成波导接地金属通孔，使其在该区域构建等效介电常数渐变区域，调整准TE模电磁波的传输相位，与传统的基片集成波导喇叭天线相比，天 线的增益更高、工作带宽更宽、辐射效率更高。
尽管上面对本发明说明性的具体实施方式进行了描述，以便于本技术领域的技术人员理解本发明，但应该清楚，本发明不限于具体实施方式的范围，对本技术领域的普通技术人员来讲，只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内，这些变化是显而易见的，一切利用本发明构思的发明创造均在保护之列。

Claims (3)

  1. 一种基片集成波导喇叭天线，包括介质基片以及黏附在介质基片上、下表面的上、下金属片，其特征在于：
    所述的上、下金属片均为大小形状一致的等腰梯形(喇叭)结构，并在两腰的外侧均有一组与两底平行的近似1/4波长的开路微带线，每根开路微带线的一端与上金属板或下金属片的腰连接；上、下金属片的下底边构成辐射端口。
  2. 根据权利要求1所述的喇叭天线，其特征在于，还包括：
    一矩形波导，其一端作为输入端，另一端上、下侧的宽边分别与所述上、下金属片的上底(短的平行边)连接。
  3. 根据权利要求1所述的喇叭天线，其特征在于，所述的近似1/4波长是指的工作频带的中心电磁波的波长。
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CN106602274A (zh) * 2016-11-18 2017-04-26 电子科技大学 一种基片集成波导宽带角锥喇叭天线及其设计方法
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CN109546348A (zh) * 2018-11-26 2019-03-29 贵州大学 一种新型小型化宽带sw-siw喇叭天线及其设计方法
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CN111180877A (zh) * 2019-12-30 2020-05-19 深圳大学 一种基片集成波导喇叭天线及其控制方法
CN112271445A (zh) * 2020-07-08 2021-01-26 中山大学 一种高增益低剖面大带宽的表面波天线
CN115863995A (zh) * 2022-12-07 2023-03-28 深圳职业技术学院 一种宽带高增益喇叭天线
CN116759816A (zh) * 2023-01-13 2023-09-15 安徽大学 基于基片集成波导的双频双极化天线

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CN106602273A (zh) * 2016-11-18 2017-04-26 电子科技大学 一种基片集成波导角锥喇叭天线及其设计方法
CN106602274A (zh) * 2016-11-18 2017-04-26 电子科技大学 一种基片集成波导宽带角锥喇叭天线及其设计方法
CN106602273B (zh) * 2016-11-18 2019-04-05 电子科技大学 一种基片集成波导角锥喇叭天线及其设计方法
CN106602274B (zh) * 2016-11-18 2019-04-05 电子科技大学 一种基片集成波导宽带角锥喇叭天线及其设计方法
CN108666750A (zh) * 2018-04-09 2018-10-16 广东曼克维通信科技有限公司 基片集成波导圆极化天线
CN109546348A (zh) * 2018-11-26 2019-03-29 贵州大学 一种新型小型化宽带sw-siw喇叭天线及其设计方法
CN110289486A (zh) * 2019-06-28 2019-09-27 南京邮电大学 宽带高增益喇叭天线
CN110323568A (zh) * 2019-06-28 2019-10-11 南京邮电大学 角锥喇叭天线
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CN112271445A (zh) * 2020-07-08 2021-01-26 中山大学 一种高增益低剖面大带宽的表面波天线
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CN116759816B (zh) * 2023-01-13 2023-10-27 安徽大学 基于基片集成波导的双频双极化天线

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