WO2017098881A1 - Novolac resin and resist film - Google Patents

Abstract

The present invention addresses the issue of providing: a novolac resin having excellent development properties, heat resistance, and dry-etching resistance; and a resist film. The novolac resin is characterized by: containing a cyclic novolac resin (A) having a molecular structure indicated by structural formula (1) (in the formula α indicates a structural moiety (α) indicated by structural formula (2) and n is an integer between 2-10); and at least one X present in the resin being a tertiary alkyl group, an alkoxy alkyl group, an acyl group, an alkoxy carbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkyl silyl group.

Description

Novolac resin and resist film

The present invention relates to a novolak resin excellent in developability, heat resistance and dry etching resistance, and a resist film using the same.

In addition to being used for adhesives, molding materials, paints, photoresist materials, epoxy resin raw materials, epoxy resin curing agents, etc., phenolic hydroxyl group-containing resins are excellent in heat resistance and moisture resistance in cured products, As a curable composition containing a phenolic hydroxyl group-containing resin itself as a main ingredient, or as a curing agent such as an epoxy resin, it is widely used in the electrical and electronic fields such as semiconductor sealing materials and insulating materials for printed wiring boards.

Among these, in the field of photoresists, a variety of resist pattern forming methods that have been subdivided according to applications and functions have been developed one after another, and the performance requirements for resist resin materials have become sophisticated and diversified accordingly. . For example, not only high developability for forming a fine pattern accurately and with high production efficiency on a highly integrated semiconductor, but also when used as a resist underlayer film, dry etching resistance, heat resistance, etc. are required. Moreover, when using for a resist permanent film, especially high heat resistance is requested | required.

The phenolic hydroxyl group-containing resin most widely used for photoresist applications is of the cresol novolac type, but as mentioned above, it does not meet the demands of today's increasingly sophisticated and diversified markets, and is heat resistant. Also, developability was not sufficient (see Patent Document 1).

JP-A-2-55359

Therefore, the problem to be solved by the present invention is to provide a novolac resin excellent in developability, heat resistance and dry etching resistance, a photosensitive composition containing the same, a curable composition, and a resist film.

As a result of intensive studies to solve the above-mentioned problems, the present inventors have a calixarene structure using a naphthol compound as a reaction raw material, and acid dissociative protection for a part or all of the phenolic hydroxyl groups derived from the naphthol compound. The novolac resin obtained by introducing a group has been found to be excellent in developability, heat resistance and dry etching resistance, and the present invention has been completed.

That is, the present invention has the following structural formula (1)

[Wherein α is the following structural formula (2)

(In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, It is an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5. X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group. , An acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group.)
And n is an integer of 2 to 10. ]
And a cyclic novolac resin (A) having a molecular structure represented by the formula: wherein at least one of X present in the resin is a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic group The present invention relates to a novolac resin characterized by being either a hydrocarbon group or a trialkylsilyl group.

The present invention further relates to a photosensitive composition containing the novolac resin and a photosensitive agent.

The present invention further relates to a resist film comprising the photosensitive composition.

The present invention further relates to a curable composition containing the novolak type resin and a curing agent.

The present invention further relates to a resist film comprising the curable composition.

The present invention is further obtained by reacting naphthol compound (a1) and aldehyde compound (a2) as essential components obtained by reacting naphthol compound (a1) and aldehyde compound (a2) as essential components. The following structural formula (3)

[Wherein β is the following structural formula (4)

(In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, (It is either an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5.)
And n is an integer of 2 to 10. ]
A part or all of the hydrogen atoms of the phenolic hydroxyl group of the phenol resin intermediate containing the cyclic phenol resin intermediate (A ′) having a molecular structure represented by: a tertiary alkyl group, an alkoxyalkyl group, an acyl group, The present invention relates to a method for producing a novolac resin, which is substituted with any one of an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

According to the present invention, it is possible to provide a novolak resin excellent in developability, heat resistance and dry etching resistance, a photosensitive composition and a curable composition containing the resin, and a resist film.

1 is a GPC chart of a phenol resin intermediate (1) obtained in Production Example 1. FIG. FIG. 2 is an FD-MS chart of the phenol resin intermediate (1) obtained in Production Example 1. FIG. 3 is a GPC chart of the phenol resin intermediate (2) obtained in Production Example 2. FIG. 4 is an FD-MS chart of the phenol resin intermediate (2) obtained in Production Example 2.

Hereinafter, the present invention will be described in detail.
The novolac resin of the present invention has the following structural formula (1)

[Wherein α is the following structural formula (2)

(In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, It is an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5. X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group. , An acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group.)
And n is an integer of 2 to 10. ]
And a cyclic novolac resin (A) having a molecular structure represented by the formula: wherein at least one of X present in the resin is a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic group It is either a hydrocarbon group or a trialkylsilyl group.

R ¹ in the structural formula (2) is any ^one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. Examples of the alkyl group which may have a substituent include alkyl groups such as a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and a cyclohexyl group, and hydrogens of these alkyl groups. A structural moiety in which some of the atoms are represented by —OX (where X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group) And a structural site substituted with a primary or secondary alkyloxy group, a halogen atom, or the like. Examples of the aryl group that may have a substituent include an aryl group such as a phenyl group, a tolyl group, a xylyl group, and a naphthyl group, and a structure in which a part of hydrogen atoms of these aryl groups is represented by —OX. Site (where X is a hydrogen atom, tertiary alkyl group, alkoxyalkyl group, acyl group, alkoxycarbonyl group, heteroatom-containing cyclic hydrocarbon group, or trialkylsilyl group), primary or secondary alkyloxy And structural sites substituted with groups, halogen atoms, and the like.

Among these, since it becomes a novolac resin having an excellent balance between heat resistance and developability, it is preferably an alkyl group which may have a substituent or an aryl group which may have a substituent, and carbon. An alkyl group having 1 to 3 atoms or a structural moiety represented by —OX (where X is a hydrogen atom, tertiary alkyl group, alkoxyalkyl group, acyl group, alkoxycarbonyl group, heteroatom-containing cyclic hydrocarbon group, An aryl group having any of alkylsilyl groups) is preferred.

R ² in the structural formula (2) is independently a hydrogen atom, an alkyl group, an alkoxy group or a halogen atom. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and a cyclohexyl group. Examples of the alkoxy group include a methoxy group, an ethoxy group, a propyloxy group, a butoxy group, a pentyloxy group, a hexyloxy group, and a cyclohexyloxy group. Examples of the halogen atom include a fluorine atom, a chlorine atom, and a bromine atom. Among these, R ² is preferably a hydrogen atom because it becomes a novolak type resin having an excellent balance between heat resistance and developability.

N in the structural formula (1) is an integer of 2 to 10. Especially, since it becomes excellent in structural stability and becomes a novolak resin with high heat resistance, it is preferably 2, 3, 4, 5, 6, or 8 and particularly preferably 4.

X in the structural formula (2) is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group. Examples of the tertiary alkyl group include a t-butyl group and a t-pentyl group. Examples of the alkoxyalkyl group include a methoxyethyl group, an ethoxyethyl group, a propoxyethyl group, a butoxyethyl group, a cyclohexyloxyethyl group, and a phenoxyethyl group. Examples of the acyl group include an acetyl group, an ethanoyl group, a propanoyl group, a butanoyl group, a cyclohexanecarbonyl group, and a benzoyl group. Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, a butoxycarbonyl group, a cyclohexyloxycarbonyl group, and a phenoxycarbonyl group. Examples of the heteroatom-containing cyclic hydrocarbon group include a tetrahydrofuranyl group and a tetrahydropyranyl group. Examples of the trialkylsilyl group include a trimethylsilyl group, a triethylsilyl group, a t-butyldimethylsilyl group, and the like.

Among them, it is preferably an alkoxyalkyl group, an alkoxycarbonyl group, or a heteroatom-containing cyclic hydrocarbon group, since it becomes a novolak type resin having an excellent balance between heat resistance and developability, and is preferably an ethoxyethyl group, tetrahydropyrani group. It is preferably any one of the above groups.

The substitution position on the naphthalene ring of the structural moiety represented by —OX in the structural formula (2) is not particularly limited. However, since it is a novolak resin having an excellent balance between heat resistance and developability, It preferably has a structural moiety represented by —OX at the position.

The novolac resin of the present invention may contain an acyclic novolac resin (B) having the structural site (α) as a repeating unit in addition to the cyclic novolac resin (A). *

When the novolak resin of the present invention contains an acyclic novolak resin (B), the content of the cyclic novolak resin (A) in the novolak resin is excellent in the balance between heat resistance and developability. Therefore, the range of 5 to 80% is preferable, and the range of 30 to 80% is more preferable.

In addition, the content rate of the said cyclic novolak-type resin (A) in a novolak resin is a value computed from the area ratio of the chart figure of the gel permeation chromatography (GPC) measured on the following conditions.

In the present invention, GPC measurement conditions are as follows.
[GPC measurement conditions]
Measuring device: “HLC-8220 GPC” manufactured by Tosoh Corporation
Column: “Shodex KF802” manufactured by Showa Denko KK (8.0 mm （× 300 mm)
+ Showa Denko “Shodex KF802” (8.0 mmФ × 300 mm)
+ Showa Denko Co., Ltd. “Shodex KF803” (8.0 mmФ × 300 mm)
+ Showa Denko Co., Ltd. “Shodex KF804” (8.0 mmФ × 300 mm)
Column temperature: 40 ° C
Detector: RI (differential refractometer)
Data processing: “GPC-8020 Model II version 4.30” manufactured by Tosoh Corporation
Developing solvent: Tetrahydrofuran Flow rate: 1.0 ml / min Sample: 0.5% by mass tetrahydrofuran solution in terms of resin solids filtered through a microfilter Injection volume: 0.1 ml
Standard sample: Monodispersed polystyrene below (Standard sample: Monodispersed polystyrene)
“A-500” manufactured by Tosoh Corporation
“A-2500” manufactured by Tosoh Corporation
"A-5000" manufactured by Tosoh Corporation
“F-1” manufactured by Tosoh Corporation
“F-2” manufactured by Tosoh Corporation
“F-4” manufactured by Tosoh Corporation
“F-10” manufactured by Tosoh Corporation
“F-20” manufactured by Tosoh Corporation

In the novolak resin of the present invention, a structural moiety represented by —OX (X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group. The ratio of the structural moiety (OX ′) in which X is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group is In order to obtain a novolac resin having an excellent balance between heat resistance and developability, the content is preferably in the range of 30 to 100%, more preferably in the range of 70 to 100%.

In the present invention, the abundance ratio of the structural moiety (OX ′) in which X is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group, In the ¹³ C-NMR measurement measured under the following conditions, a peak of 145 to 160 ppm derived from a structural site (OH) in which X is a hydrogen atom, that is, a carbon atom on a benzene ring to which a phenolic hydroxyl group is bonded, and X is Bonded to an oxygen atom derived from a phenolic hydroxyl group in a structural moiety (OX ') that is any of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group It is a value calculated from the ratio to the peak of 95 to 105 ppm derived from the carbon atom in X.
Equipment: “JNM-LA300” manufactured by JEOL Ltd.
Solvent: DMSO-d ₆

The method for producing the novolak resin of the present invention is not particularly limited. For example, the following structural formula (3) obtained by reacting a naphthol compound (a1) and an aldehyde compound (a2) as essential components

[Wherein β is the following structural formula (4)

(In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, (It is either an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5.)
And n is an integer of 2 to 10. ]
A part or all of the hydrogen atoms of the phenolic hydroxyl group of the phenol resin intermediate containing the cyclic phenol resin intermediate (A ′) having a molecular structure represented by: a tertiary alkyl group, an alkoxyalkyl group, an acyl group, Examples of the method include substitution with any of an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

^{R 1, R} 2, n of the structural formula (4) is as defined ^{R 1, R} 2, n of the structural formula (2).

The naphthol compound (a1) is a compound having one or more substituents such as an alkyl group, an alkoxy group, and a halogen atom on naphthol and an aromatic nucleus of naphthol, and one kind may be used alone. More than one type may be used in combination. The position of the phenolic hydroxyl group on the naphthalene ring and the substitution position of various substituents are not particularly limited. However, since it becomes a novolak resin having a good balance between heat resistance and developability, it is phenolic at the 1-position on the naphthalene ring. A compound having a hydroxyl group is preferred, and 1-naphthol is particularly preferred.

Examples of the aldehyde compound (a2) include alkyl aldehydes such as formaldehyde, acetaldehyde, propyl aldehyde, butyraldehyde, isobutyraldehyde, pentyl aldehyde, and hexyl aldehyde; salicyl aldehyde, 3-hydroxybenzaldehyde, 4-hydroxybenzaldehyde, 2-hydroxy Hydroxybenzaldehyde such as -4-methylbenzaldehyde, 2,4-dihydroxybenzaldehyde, 3,4-dihydroxybenzaldehyde; 1-hydroxy-2-naphthaldehyde, 2-hydroxy-1-naphthaldehyde, 6-hydroxy-2-naphthaldehyde Hydroxy naphthaldehydes such as; alkoxy benzaldehydes such as methoxybenzaldehyde and ethoxybenzaldehyde; Hydroxyl groups and alkoxy such as loxy-3-methoxybenzaldehyde, 3-hydroxy-4-methoxybenzaldehyde, 4-hydroxy-3-methoxybenzaldehyde, 3-ethoxy-4-hydroxybenzaldehyde, 4-hydroxy-3,5-dimethoxybenzaldehyde Benzaldehyde having both groups; halogenated benzaldehydes such as bromobenzaldehyde and the like. Each of these may be used immediately, or two or more of them may be used in combination.

Especially, since it becomes a novolak-type resin excellent in balance between heat resistance and developability, alkyl aldehyde or the hydroxybenzaldehyde is preferable, and since it becomes a cyclic novolak-type resin (A) having further excellent developability, salicylaldehyde, 3 -Hydroxybenzaldehyde or 4-hydroxybenzaldehyde is preferred.

The reaction ratio between the naphthol compound (a1) and the aldehyde compound (a2) is preferably performed under the condition that the molar ratio [(a1) / (a2)] is in the range of 0.5 to 1.5. .

The reaction between the naphthol compound (a1) and the aldehyde compound (a2) is preferably performed under acid catalyst conditions since the reaction proceeds efficiently. Examples of the acid catalyst include acetic acid, oxalic acid, sulfuric acid, hydrochloric acid, phenolsulfonic acid, paratoluenesulfonic acid, zinc acetate, manganese acetate, and the like. These may be used alone or in combination of two or more. The addition amount of the acid catalyst is preferably in the range of 0.1 to 10% by mass with respect to the total mass of the reaction raw materials.

The reaction temperature condition of the naphthol compound (a1) and the aldehyde compound (a2) is preferably in the range of 50 to 120 ° C., since the reaction proceeds efficiently.

The reaction of the naphthol compound (a1) and the aldehyde compound (a2) may be performed in an organic solvent or a mixed solvent of water and an organic solvent as desired. The organic solvent to be used can be appropriately selected according to the reaction temperature conditions, the solubility of the reaction raw materials, and the like. Specifically, alcohol solvents such as 2-ethoxyethanol, propanol, butanol, octanol, ethylene glycol, glycerin, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether; methyl ethyl ketone, methyl isobutyl Examples include ketone solvents such as ketones; ester solvents such as butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, and propylene glycol monomethyl ether acetate. Each of these may be used alone, or two or more kinds of mixed solvents may be used.

After completion of the reaction, the phenol resin intermediate containing the cyclic phenol resin intermediate (A ′) is obtained by washing the reaction product with water.

When the cyclic novolac resin of the present invention is produced by the above method, the reaction product of the naphthol compound (a1) and the aldehyde compound (a2) has a molecular structure represented by the structural formula (3). In addition to the cyclic phenol resin intermediate (A ′), an acyclic phenol resin intermediate (B ′) having the structural site (β) as a repeating unit may be obtained.

The amount of the acyclic phenol resin intermediate (B ′) produced is determined by selecting a reaction raw material, the reaction ratio between the naphthol compound (a1) and the aldehyde compound (a2), and performing a purification operation such as reprecipitation after the reaction. It is adjusted appropriately depending on whether or not. Among these, since the finally obtained novolac resin has an excellent balance between heat resistance and developability, the content of the cyclic phenol resin intermediate (A ′) in the phenol resin intermediate is 5 to 80. % Is preferable, and a range of 30 to 80% is more preferable.

The content of the cyclic phenol resin intermediate (A ′) in the phenol resin intermediate is a gel permeation chromatography (GPC) chart, as is the content of the cyclic novolac resin (A) in the novolak resin. It is a value calculated from the area ratio of the figure.

Next, a part or all of the hydrogen atoms of the phenolic hydroxyl group of the obtained phenol resin intermediate is converted to a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkyl. Specifically, the substitution method with any of the silyl groups specifically includes the phenol resin intermediate and the following structural formulas (5-1) to (5-8).

(In the formula, X represents a halogen atom, R ³ each independently represents an alkyl group having 1 to 6 carbon atoms or a phenyl group, and n is 1 or 2.)
Or a compound represented by any of the above (hereinafter abbreviated as “protecting group introducing agent”).

Among the protecting group-introducing agents, since the cleavage is likely to proceed under acid catalyst conditions and the resin is excellent in photosensitivity, resolution and alkali developability, the structural formula (5-2) or (5-7) The compounds represented are preferred, with ethyl vinyl ether or dihydropyran being particularly preferred.

The method of reacting the phenol resin intermediate with the protecting group introducing agent represented by any one of the structural formulas (5-1) to (5-8) depends on which compound is used as the protecting group introducing agent. Differently, the protective group-introducing agent is represented by any one of the structural formulas (5-1), (5-3), (5-4), (5-5), (5-6), and (5-8). In the case of using such a compound, for example, a method of reacting the phenol resin intermediate and a protecting group introducing agent under basic catalyst conditions such as pyridine and triethylamine can be mentioned. Further, when the compound represented by the structural formula (5-2) or (5-7) is used as the protective group introducing agent, for example, the phenol resin intermediate and the protective group introducing agent are mixed with hydrochloric acid or the like. The method of making it react on acidic catalyst conditions is mentioned.

The reaction ratio between the phenol resin intermediate and the protecting group introducing agent represented by any one of the structural formulas (5-1) to (5-8) depends on which compound is used as the protecting group introducing agent. Although it is different, a structural site represented by -OX existing in the obtained novolak type resin (X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, A structural site in which X is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group. It is preferable to carry out the reaction at such a ratio that the ratio of OX ′) is in the range of 30 to 100%. That is, the protective group introducing agent is preferably reacted at a ratio of 0.3 to 2 mol with respect to a total of 1 mol of phenolic hydroxyl groups in the phenol resin intermediate, and 0.6 to 2.0 mol. It is more preferable to make it react in the range.

The reaction between the phenol resin intermediate and the protecting group introducing agent may be performed in an organic solvent. Examples of the organic solvent used here include 1,3-dioxolane. Each of these organic solvents may be used alone or as a mixed solvent of two or more types.

After completion of the reaction, the desired novolak resin can be obtained by washing the reaction mixture with water and purifying it by reprecipitation or the like.

The novolak type resin of the present invention described in detail above is easily dissolved in a general-purpose organic solvent and has excellent heat resistance. Therefore, various electric and electronic materials such as adhesives, paints, photoresists, printed wiring boards, etc. It can be used for member applications. Among these applications, it is particularly suitable for resist applications that make use of the characteristics that are excellent in developability, heat resistance and dry etching resistance, as an alkali-developable resist material combined with a photosensitive agent, or in combination with a curing agent, It can also be suitably used for thick film applications, resist underlayer films, and resist permanent film applications.

The photosensitive composition of the present invention contains the novolak resin of the present invention and a photoacid generator as essential components.

Examples of the photoacid generator include organic halogen compounds, sulfonic acid esters, onium salts, diazonium salts, disulfone compounds, and the like. These may be used alone or in combination of two or more. . Specific examples thereof include, for example, tris (trichloromethyl) -s-triazine, tris (tribromomethyl) -s-triazine, tris (dibromomethyl) -s-triazine, and 2,4-bis (tribromomethyl). Haloalkyl group-containing s-triazine derivatives such as -6-p-methoxyphenyl-s-triazine;

Halogen-substituted paraffinic hydrocarbon compounds such as 1,2,3,4-tetrabromobutane, 1,1,2,2-tetrabromoethane, carbon tetrabromide, iodoform; hexabromocyclohexane, hexachlorocyclohexane, hexabromocyclo Halogen-substituted cycloparaffinic hydrocarbon compounds such as dodecane;

Halogenated benzene derivatives such as bis (trichloromethyl) benzene and bis (tribromomethyl) benzene; Sulfone compounds containing haloalkyl groups such as tribromomethylphenylsulfone and trichloromethylphenylsulfone; Halogen containing such as 2,3-dibromosulfolane Sulfolane compounds; haloalkyl group-containing isocyanurate compounds such as tris (2,3-dibromopropyl) isocyanurate;

Triphenylsulfonium chloride, triphenylsulfonium methanesulfonate, triphenylsulfonium trifluoromethanesulfonate, diphenyl (4-methylphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium tetrafluoroborate, triphenylsulfonium trifluorosulfonate Sulfonium salts such as phenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluorophosphonate;

Iodonium salts such as diphenyliodonium trifluoromethanesulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluoroarsenate, diphenyliodonium hexafluorophosphonate;

methyl p-toluenesulfonate, ethyl p-toluenesulfonate, butyl p-toluenesulfonate, phenyl p-toluenesulfonate, 1,2,3-tris (p-toluenesulfonyloxy) benzene, benzoin p-toluenesulfonate Esters, methyl methanesulfonate, ethyl methanesulfonate, butyl methanesulfonate, 1,2,3-tris (methanesulfonyloxy) benzene, phenyl methanesulfonate, benzoin methanesulfonate, methyl trifluoromethanesulfonate, trifluoromethane Ethyl sulfonate, butyl trifluoromethanesulfonate, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, phenyl trifluoromethanesulfonate, benzoin ester of trifluoromethanesulfonate Sulfonate compounds such as ether; disulfone compounds such as diphenyl sulfone;

Bis (phenylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, cyclohexylsulfonyl- (2-methoxyphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (3-methoxyphenylsulfonyl) diazomethane, Cyclohexylsulfonyl- (4-methoxyphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2-methoxyphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (3-methoxyphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (4-methoxyphenylsulfonyl) diazomethane, cyclohexylsulfonyl -(2-Fluorophenylsulfonyl) diazomethane, cycl Hexylsulfonyl- (3-fluorophenylsulfonyl) diazomethane, cyclohexylsulfonyl- (4-fluorophenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2-fluorophenylsulfonyl) diazomethane, cyclopentylsulfonyl- (3-fluorophenylsulfonyl) diazomethane, cyclopentylsulfonyl -(4-fluorophenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2-chlorophenylsulfonyl) diazomethane, cyclohexylsulfonyl- (3-chlorophenylsulfonyl) diazomethane, cyclohexylsulfonyl- (4-chlorophenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2-chlorophenyl) Sulfonyl) diazomethane, cyclopenty Sulfonyl- (3-chlorophenylsulfonyl) diazomethane, cyclopentylsulfonyl- (4-chlorophenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2-trifluoromethylphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (3-trifluoromethylphenylsulfonyl) diazomethane, cyclohexyl Sulfonyl- (4-trifluoromethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2-trifluoromethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (3-trifluoromethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (4-trifluoromethyl) Phenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2- Trifluoromethoxyphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (3-trifluoromethoxyphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (4-trifluoromethoxyphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2-trifluoromethoxyphenylsulfonyl) diazomethane, Cyclopentylsulfonyl- (3-trifluoromethoxyphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (4-trifluoromethoxyphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2,4,6-trimethylphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2, 3,4-trimethylphenylsulfonyl) diazomethane, cyclohexyl Sulfonyl- (2,4,6-triethylphenylsulfonyl) diazomethane, cyclohexylsulfonyl- (2,3,4-triethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2,4,6-trimethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2,3,4-trimethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2,4,6-triethylphenylsulfonyl) diazomethane, cyclopentylsulfonyl- (2,3,4-triethylphenylsulfonyl) diazomethane, phenylsulfonyl- (2 -Methoxyphenylsulfonyl) diazomethane, phenylsulfonyl- (3-methoxyphenylsulfonyl) diazomethane, phenylsulfonyl- (4-methoxypheny Sulfonyl) diazomethane, bis (2-methoxyphenylsulfonyl) diazomethane, bis (3-methoxyphenylsulfonyl) diazomethane, bis (4-methoxyphenylsulfonyl) diazomethane, phenylsulfonyl- (2,4,6-trimethylphenylsulfonyl) diazomethane, Phenylsulfonyl- (2,3,4-trimethylphenylsulfonyl) diazomethane, phenylsulfonyl- (2,4,6-triethylphenylsulfonyl) diazomethane, phenylsulfonyl- (2,3,4-triethylphenylsulfonyl) diazomethane, 2, 4-dimethylphenylsulfonyl- (2,4,6-trimethylphenylsulfonyl) diazomethane, 2,4-dimethylphenylsulfonyl- (2,3,4-trimethylphenylsulfonyl) ) Sulfonediazide compounds such as diazomethane, phenylsulfonyl- (2-fluorophenylsulfonyl) diazomethane, phenylsulfonyl- (3-fluorophenylsulfonyl) diazomethane, phenylsulfonyl- (4-fluorophenylsulfonyl) diazomethane;

O-nitrobenzyl ester compounds such as o-nitrobenzyl-p-toluenesulfonate; sulfone hydrazide compounds such as N, N'-di (phenylsulfonyl) hydrazide and the like.

The amount of the photoacid generator added is in the range of 0.1 to 20 parts by mass with respect to 100 parts by mass of the resin solid content of the photosensitive composition because the photosensitive composition has high photosensitivity. preferable.

The photosensitive composition of the present invention may contain an organic base compound for neutralizing the acid generated from the photoacid generator during exposure. The addition of the organic base compound has an effect of preventing the dimensional variation of the resist pattern due to the movement of the acid generated from the photoacid generator. Examples of the organic base compound used here include organic amine compounds selected from nitrogen-containing compounds, and specifically include pyrimidine, 2-aminopyrimidine, 4-aminopyrimidine, 5-aminopyrimidine, and 2,4-diamino. Pyrimidine, 2,5-diaminopyrimidine, 4,5-diaminopyrimidine, 4,6-diaminopyrimidine, 2,4,5-triaminopyrimidine, 2,4,6-triaminopyrimidine, 4,5,6-tri Aminopyrimidine, 2,4,5,6-tetraaminopyrimidine, 2-hydroxypyrimidine, 4-hydroxypyrimidine, 5-hydroxypyrimidine, 2,4-dihydroxypyrimidine, 2,5-dihydroxypyrimidine, 4,5-dihydroxypyrimidine 4,6-dihydroxypyrimidine, 2,4,5-trihydroxy Limidine, 2,4,6-trihydroxypyrimidine, 4,5,6-trihydroxypyrimidine, 2,4,5,6-tetrahydroxypyrimidine, 2-amino-4-hydroxypyrimidine, 2-amino-5-hydroxy Pyrimidine, 2-amino-4,5-dihydroxypyrimidine, 2-amino-4,6-dihydroxypyrimidine, 4-amino-2,5-dihydroxypyrimidine, 4-amino-2,6-dihydroxypyrimidine, 2-amino- 4-methylpyrimidine, 2-amino-5-methylpyrimidine, 2-amino-4,5-dimethylpyrimidine, 2-amino-4,6-dimethylpyrimidine, 4-amino-2,5-dimethylpyrimidine, 4-amino -2,6-dimethylpyrimidine, 2-amino-4-methoxypyrimidine, 2-amino-5-methyl Xypyrimidine, 2-amino-4,5-dimethoxypyrimidine, 2-amino-4,6-dimethoxypyrimidine, 4-amino-2,5-dimethoxypyrimidine, 4-amino-2,6-dimethoxypyrimidine, 2-hydroxy -4-methylpyrimidine, 2-hydroxy-5-methylpyrimidine, 2-hydroxy-4,5-dimethylpyrimidine, 2-hydroxy-4,6-dimethylpyrimidine, 4-hydroxy-2,5-dimethylpyrimidine, 4- Hydroxy-2,6-dimethylpyrimidine, 2-hydroxy-4-methoxypyrimidine, 2-hydroxy-4-methoxypyrimidine, 2-hydroxy-5-methoxypyrimidine, 2-hydroxy-4,5-dimethoxypyrimidine, 2-hydroxy -4,6-dimethoxypyrimidine, 4-hydroxy-2 Pyrimidine compounds such as 1,5-dimethoxypyrimidine, 4-hydroxy-2,6-dimethoxypyrimidine;

Pyridine compounds such as pyridine, 4-dimethylaminopyridine, 2,6-dimethylpyridine;

An amine compound substituted with a hydroxyalkyl group having 1 to 4 carbon atoms such as diethanolamine, triethanolamine, triisopropanolamine, tris (hydroxymethyl) aminomethane, bis (2-hydroxyethyl) iminotris (hydroxymethyl) methane;

Examples include aminophenol compounds such as 2-aminophenol, 3-aminophenol, and 4-aminophenol. These may be used alone or in combination of two or more. Among them, the pyrimidine compound, the pyridine compound, or the amine compound having a hydroxy group is preferable because the dimensional stability of the resist pattern after exposure is excellent, and the amine compound having a hydroxy group is particularly preferable.

When the organic base compound is added, the addition amount is preferably in the range of 0.1 to 100 mol%, preferably in the range of 1 to 50 mol%, with respect to the content of the photoacid generator. Is more preferable.

The photosensitive composition of the present invention may be used in combination with other resin (V) in addition to the novolak resin of the present invention. As the other resin (V), any resin can be used as long as it is soluble in an alkali developer or can be dissolved in an alkali developer by using it in combination with an additive such as an acid generator. .

Examples of the other resin (V) used here include other phenolic resins (V-1) other than the novolak resin of the present invention, p-hydroxystyrene, and p- (1,1,1,3,3,3). A homopolymer or copolymer (V-2) of a hydroxy group-containing styrene compound such as -hexafluoro-2-hydroxypropyl) styrene, and the hydroxyl group of (V-1) or (V-2) is t-butoxycarbonyl Modified with an acid-decomposable group such as benzyloxycarbonyl group (V-3), homopolymer or copolymer (V-4) of (meth) acrylic acid, norbornene compound, tetracyclododecene compound, etc. And an alternating polymer (V-5) of alicyclic polymerizable monomer and maleic anhydride or maleimide.

Examples of the other phenol resin (V-1) include phenol novolak resin, cresol novolak resin, naphthol novolak resin, co-condensed novolak resin using various phenolic compounds, aromatic hydrocarbon formaldehyde resin-modified phenol resin, Cyclopentadiene phenol addition resin, phenol aralkyl resin (Zylok resin), naphthol aralkyl resin, trimethylol methane resin, tetraphenylol ethane resin, biphenyl-modified phenol resin (polyhydric phenol compound in which phenol nucleus is linked by bismethylene group), Biphenyl-modified naphthol resin (polyvalent naphthol compound in which phenol nucleus is linked by bismethylene group), aminotriazine-modified phenol resin (melamine, benzoguanamine, etc. Nuclei include phenolic resins such as polyhydric phenol compound) and an alkoxy group-containing aromatic ring-modified novolac resins, which are linked (polyhydric phenol compound phenol nucleus and an alkoxy group-containing aromatic ring are connected by formaldehyde).

Among the other phenol resins (V-1), a photosensitive resin composition having high sensitivity and excellent heat resistance is obtained, so that a cresol novolac resin or a co-condensed novolak resin of cresol and another phenolic compound is used. preferable. Specifically, the cresol novolak resin or the co-condensed novolak resin of cresol and other phenolic compound comprises at least one cresol selected from the group consisting of o-cresol, m-cresol and p-cresol and an aldehyde compound. It is a novolak resin obtained as an essential raw material and appropriately used in combination with other phenolic compounds.

Other phenolic compounds other than the cresol include, for example, phenol; 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol Xylenol such as o-ethylphenol, m-ethylphenol, p-ethylphenol, etc .; butylphenol such as isopropylphenol, butylphenol, pt-butylphenol; p-pentylphenol, p-octylphenol, p-nonylphenol, alkylphenols such as p-cumylphenol; halogenated phenols such as fluorophenol, chlorophenol, bromophenol and iodophenol; p-phenylphenol, aminophenol, nitrophenol, 1-substituted phenols such as nitrophenol and trinitrophenol; condensed polycyclic phenols such as 1-naphthol and 2-naphthol; resorcin, alkylresorcin, pyrogallol, catechol, alkylcatechol, hydroquinone, alkylhydroquinone, phloroglucin, bisphenol A, bisphenol And polyhydric phenols such as F, bisphenol S, and dihydroxynaphthalene. These other phenolic compounds may be used alone or in combination of two or more. When these other phenolic compounds are used, the amount used is preferably such that the other phenolic compound is in the range of 0.05 to 1 mol with respect to a total of 1 mol of the cresol raw material.

Examples of the aldehyde compound include formaldehyde, paraformaldehyde, trioxane, acetaldehyde, propionaldehyde, polyoxymethylene, chloral, hexamethylenetetramine, furfural, glyoxal, n-butyraldehyde, caproaldehyde, allylaldehyde, benzaldehyde, croton. Examples include aldehyde, acrolein, tetraoxymethylene, phenylacetaldehyde, o-tolualdehyde, salicylaldehyde, and the like. These may be used alone or in combination of two or more. Among these, formaldehyde is preferable because of its excellent reactivity, and formaldehyde and other aldehyde compounds may be used in combination. When formaldehyde and other aldehyde compounds are used in combination, the amount of the other aldehyde compounds used is preferably in the range of 0.05 to 1 mole per mole of formaldehyde.

The reaction ratio between the phenolic compound and the aldehyde compound in producing the novolak resin is such that a photosensitive resin composition having excellent sensitivity and heat resistance can be obtained. The range is preferably 1.6 mol, and more preferably in the range of 0.5 to 1.3.

The reaction between the phenolic compound and the aldehyde compound is performed in the presence of an acid catalyst at a temperature of 60 to 140 ° C., and then water and residual monomers are removed under reduced pressure. Examples of the acid catalyst used here include oxalic acid, sulfuric acid, hydrochloric acid, phenolsulfonic acid, p-toluenesulfonic acid, zinc acetate, manganese acetate, etc., each of which may be used alone or in combination of two or more. May be. Of these, oxalic acid is preferred because of its excellent catalytic activity.

Among the cresol novolak resins detailed above or co-condensed novolak resins of cresol and other phenolic compounds, cresol novolak resins using metacresol alone or cresol novolak resins using metacresol and paracresol in combination It is preferable that In the latter case, the reaction molar ratio of metacresol to paracresol [metacresol / paracresol] is a photosensitive resin composition having an excellent balance between sensitivity and heat resistance, so that the ratio is 10/0 to 2/8. The range is preferable, and the range of 7/3 to 2/8 is more preferable.

When the other resin (V) is used, the blending ratio of the novolac resin of the present invention to the other resin (V) can be arbitrarily adjusted depending on the desired application. For example, since the novolak resin of the present invention is excellent in light sensitivity, resolution, and heat resistance when combined with a photosensitive agent, a photosensitive composition containing this as a main component is optimal for resist applications. At this time, the proportion of the novolak resin of the present invention in the total resin component is preferably 60% by mass or more, because it is a curable composition having high photosensitivity and excellent resolution and heat resistance. % Or more is more preferable.

Further, taking advantage of the excellent photosensitivity of the novolac resin of the present invention, it can be used as a sensitivity improver. In this case, the blending ratio of the novolac resin of the present invention to the other resin (V) is in the range of 3 to 80 parts by mass of the novolac resin of the present invention with respect to 100 parts by mass of the other resin (V). It is preferable.

The photosensitive composition of the present invention may further contain a photosensitive agent used for a normal resist material. Examples of the photosensitive agent include compounds having a quinonediazide group. Specific examples of the compound having a quinonediazide group include, for example, an aromatic (poly) hydroxy compound, naphthoquinone-1,2-diazide-5-sulfonic acid, naphthoquinone-1,2-diazide-4-sulfonic acid, orthoanthra Examples thereof include complete ester compounds, partial ester compounds, amidated products, and partially amidated products with sulfonic acids having a quinonediazide group such as quinonediazidesulfonic acid.

Examples of the aromatic (poly) hydroxy compound used here include 2,3,4-trihydroxybenzophenone, 2,4,4′-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,4, 6-trihydroxybenzophenone, 2,3,4-trihydroxy-2′-methylbenzophenone, 2,3,4,4′-tetrahydroxybenzophenone, 2,2 ′, 4,4′-tetrahydroxybenzophenone, 2, 3 ′, 4,4 ′, 6-pentahydroxybenzophenone, 2,2 ′, 3,4,4′-pentahydroxybenzophenone, 2,2 ′, 3,4,5-pentahydroxybenzophenone, 2,3 ′, 4,4 ′, 5 ′, 6-hexahydroxybenzophenone, 2,3,3 ′, 4,4 ′, 5′-hexahydroxyben Polyhydroxy benzophenone compounds such phenone;

Bis (2,4-dihydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, 2- (4-hydroxyphenyl) -2- (4′-hydroxyphenyl) propane, 2- (2, 4-dihydroxyphenyl) -2- (2 ′, 4′-dihydroxyphenyl) propane, 2- (2,3,4-trihydroxyphenyl) -2- (2 ′, 3 ′, 4′-trihydroxyphenyl) Propane, 4,4 '-{1- [4- [2- (4-hydroxyphenyl) -2-propyl] phenyl] ethylidene} bisphenol, 3,3'-dimethyl- {1- [4- [2- ( Bis [(poly) hydroxyphenyl] alkane compounds such as 3-methyl-4-hydroxyphenyl) -2-propyl] phenyl] ethylidene} bisphenol;

Tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethyl) A tris (hydroxyphenyl) methane compound such as phenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, or a methyl-substituted product thereof;

Bis (3-cyclohexyl-4-hydroxyphenyl) -3-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -2-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxyphenyl) -4- Hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis ( 5-cyclohexyl-4-hydroxy-2-methylphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-3- Methylph Nyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-3-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-3-methylphenyl) -2-hydroxy Phenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-2-hydroxyphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4) -Methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-2-hydroxy-4-methylphenyl) -4-hydroxyphenylmethane and the like, bis (cyclohexylhydroxyphenyl) (hydroxyphenyl) methane compounds Methyl-substituted products thereof. These photosensitizers may be used alone or in combination of two or more.

The blending amount of the photosensitive agent in the photosensitive composition of the present invention is a photosensitive composition having excellent photosensitivity, and therefore 5 to 50 parts by mass with respect to 100 parts by mass in total of the resin solid content of the photosensitive composition. It is preferable that the ratio is

The photosensitive composition of the present invention may contain a surfactant for the purpose of improving the film-forming property and pattern adhesion when used for resist applications, and reducing development defects. Examples of the surfactant used here include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ether compounds such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene Polyoxyethylene alkyl allyl ether compounds such as ethylene nonylphenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Sorbitan fatty acid ester compounds such as polyoxyethylene sorbitan monolaurate, poly Nonionic surfactants such as polyoxyethylene sorbitan fatty acid ester compounds such as xylethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate; fluoro fat Fluorosurfactants having a fluorine atom in the molecular structure such as a copolymer of a polymerizable monomer having a group and [poly (oxyalkylene)] (meth) acrylate; having a silicone structure site in the molecular structure Examples thereof include silicone surfactants. These may be used alone or in combination of two or more.

The compounding amount of these surfactants is preferably in the range of 0.001 to 2 parts by mass with respect to a total of 100 parts by mass of the resin solid content in the photosensitive composition of the present invention.

When the photosensitive composition of the present invention is used for photoresist applications, in addition to the novolak-type resin and photoacid generator of the present invention, other phenol resins (V), photosensitive agents, and surfactants as necessary. A resist composition can be obtained by adding various additives such as dyes, fillers, crosslinking agents and dissolution accelerators and dissolving them in an organic solvent. This may be used as it is as a positive resist solution, or may be used as a positive resist film obtained by removing the solvent by applying the resist composition in a film form. Examples of the support film used as a resist film include synthetic resin films such as polyethylene, polypropylene, polycarbonate, and polyethylene terephthalate, and may be a single layer film or a plurality of laminated films. The surface of the support film may be a corona-treated one or a release agent.

The organic solvent used in the resist composition of the present invention is not particularly limited. For example, alkylene glycol monoalkyl such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether propylene glycol monomethyl ether, etc. Ethers; Dialkylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether; alkylene groups such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate Cole alkyl ether acetate; Ketone compounds such as acetone, methyl ethyl ketone, cyclohexanone, and methyl amyl ketone; Cyclic ethers such as dioxane; Methyl 2-hydroxypropionate, Ethyl 2-hydroxypropionate, Ethyl 2-hydroxy-2-methylpropionate , Ethyl ethoxyacetate, ethyl oxyacetate, methyl 2-hydroxy-3-methylbutanoate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl formate, ethyl acetate, butyl acetate, methyl acetoacetate, acetoacetic acid Examples thereof include ester compounds such as ethyl, and these may be used alone or in combination of two or more.

The resist composition of the present invention can be prepared by blending the above components and mixing them using a stirrer or the like. Moreover, when the resin composition for photoresists contains a filler and a pigment, it can adjust by disperse | distributing or mixing using dispersers, such as a dissolver, a homogenizer, and a 3 roll mill.

In the photolithography method using the resist composition of the present invention, for example, the resist composition is applied onto an object to be subjected to silicon substrate photolithography, and prebaked at a temperature of 60 to 150 ° C. The coating method at this time may be any method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor blade coating and the like. Next, a resist pattern is created. Since the resist composition of the present invention is a positive type, the target resist pattern is exposed through a predetermined mask, and the exposed portion is dissolved with an alkaline developer. Thus, a resist pattern is formed. Since the resist composition of the present invention has both high alkali solubility in the exposed area and high alkali resistance in the non-exposed area, it is possible to form a resist pattern with excellent resolution.

The curable composition of the present invention contains the novolac resin of the present invention and a curing agent as essential components. The curable composition of the present invention may use other resin (W) in addition to the novolac resin of the present invention. Other resins (W) used here include, for example, various novolak resins, addition polymerization resins of alicyclic diene compounds such as dicyclopentadiene and phenol compounds, phenolic hydroxyl group-containing compounds and alkoxy group-containing aromatic compounds, Modified novolak resin, phenol aralkyl resin (Xylok resin), naphthol aralkyl resin, trimethylol methane resin, tetraphenylol ethane resin, biphenyl modified phenol resin, biphenyl modified naphthol resin, aminotriazine modified phenol resin, and various vinyl polymers Etc.

More specifically, the various novolak resins include phenolphenol, cresol, xylenol and other alkylphenols, phenylphenol, resorcinol, biphenyl, bisphenols such as bisphenol A and bisphenol F, phenolic hydroxyl group-containing compounds such as naphthol and dihydroxynaphthalene. And a polymer obtained by reacting an aldehyde compound with acid catalyst conditions.

The various vinyl polymers include polyhydroxystyrene, polystyrene, polyvinyl naphthalene, polyvinyl anthracene, polyvinyl carbazole, polyindene, polyacenaphthylene, polynorbornene, polycyclodecene, polytetracyclododecene, polynortricyclene, poly ( A homopolymer of a vinyl compound such as (meth) acrylate or a copolymer thereof may be mentioned.

When these other resins are used, the blending ratio of the novolak resin of the present invention and the other resin (W) can be arbitrarily set according to the application, but the dry etching resistance and thermal decomposition exhibited by the present invention are achieved. From the standpoint of more remarkably improving the performance of the resin, it is preferable that the ratio of the other resin (W) is 0.5 to 100 parts by mass with respect to 100 parts by mass of the novolak resin of the present invention.

The curing agent used in the present invention is, for example, a melamine compound, a guanamine compound, a glycoluril compound, a urea compound, a resole resin, an epoxy substituted with at least one group selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Compound, isocyanate compound, azide compound, compound containing double bond such as alkenyl ether group, acid anhydride, oxazoline compound and the like.

Examples of the melamine compound include hexamethylol melamine, hexamethoxymethyl melamine, a compound in which 1 to 6 methylol groups of hexamethylol melamine are methoxymethylated, hexamethoxyethyl melamine, hexaacyloxymethyl melamine, hexamethylol melamine methylol Examples include compounds in which 1 to 6 groups are acyloxymethylated. *

Examples of the guanamine compound include tetramethylol guanamine, tetramethoxymethyl guanamine, tetramethoxymethyl benzoguanamine, a compound in which 1 to 4 methylol groups of tetramethylol guanamine are methoxymethylated, tetramethoxyethyl guanamine, tetraacyloxyguanamine, tetra Examples thereof include compounds in which 1 to 4 methylol groups of methylolguanamine are acyloxymethylated.

Examples of the glycoluril compound include 1,3,4,6-tetrakis (methoxymethyl) glycoluril, 1,3,4,6-tetrakis (butoxymethyl) glycoluril, 1,3,4,6-tetrakis ( Hydroxymethyl) glycoluril and the like.

Examples of the urea compound include 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea and 1,1,3,3-tetrakis (methoxymethyl) urea. It is done.

The resole resin may be, for example, an alkylphenol such as phenol, cresol or xylenol, a bisphenol such as phenylphenol, resorcinol, biphenyl, bisphenol A or bisphenol F, a phenolic hydroxyl group-containing compound such as naphthol or dihydroxynaphthalene, and an aldehyde compound. Examples include polymers obtained by reacting under catalytic conditions.

Examples of the epoxy compound include diglycidyloxynaphthalene, phenol novolac type epoxy resin, cresol novolac type epoxy resin, naphthol novolak type epoxy resin, naphthol-phenol co-condensed novolac type epoxy resin, naphthol-cresol co-condensed novolac type epoxy resin, Phenol aralkyl type epoxy resin, naphthol aralkyl type epoxy resin, 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane, naphthylene ether type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene- Examples include phenol addition reaction type epoxy resins, phosphorus atom-containing epoxy resins, polyglycidyl ethers of cocondensates of phenolic hydroxyl group-containing compounds and alkoxy group-containing aromatic compounds, and the like. That.

Examples of the isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, and cyclohexane diisocyanate.

Examples of the azide compound include 1,1'-biphenyl-4,4'-bisazide, 4,4'-methylidenebisazide, 4,4'-oxybisazide, and the like.

Examples of the compound containing a double bond such as an alkenyl ether group include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1,4-butanediol divinyl ether, tetramethylene glycol divinyl ether. , Neopentyl glycol divinyl ether, trimethylolpropane trivinyl ether, hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, sorbitol tetravinyl ether, sorbitol pentavinyl ether, trimethylolpropane trivinyl ether Etc.

Examples of the acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, 4,4 Aromatic acid anhydrides such as '-(isopropylidene) diphthalic anhydride, 4,4'-(hexafluoroisopropylidene) diphthalic anhydride; tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride And alicyclic carboxylic acid anhydrides such as methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, and trialkyltetrahydrophthalic anhydride.

Among these, a glycoluril compound, a urea compound, and a resole resin are preferable, and a glycoluril compound is particularly preferable because it is a curable composition having excellent curability and heat resistance in a cured product.

Since the compounding amount of the curing agent in the curable composition of the present invention is a composition having excellent curability, it is 0 with respect to a total of 100 parts by mass of the novolac resin of the present invention and the other resin (W). The ratio is preferably 5 to 50 parts by mass.

When the curable composition of the present invention is used for a resist underlayer film (BARC film), in addition to the novolac resin and the curing agent of the present invention, other resins (W), surfactants, By adding various additives such as dyes, fillers, cross-linking agents and dissolution accelerators and dissolving them in an organic solvent, a resist underlayer film composition can be obtained.

The organic solvent used in the resist underlayer film composition is not particularly limited. For example, alkylene glycol monoalkyl such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether propylene glycol monomethyl ether, etc. Ethers; Dialkylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether; alkylene groups such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate Cole alkyl ether acetate; Ketone compounds such as acetone, methyl ethyl ketone, cyclohexanone, and methyl amyl ketone; Cyclic ethers such as dioxane; Methyl 2-hydroxypropionate, Ethyl 2-hydroxypropionate, Ethyl 2-hydroxy-2-methylpropionate , Ethyl ethoxyacetate, ethyl oxyacetate, methyl 2-hydroxy-3-methylbutanoate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl formate, ethyl acetate, butyl acetate, methyl acetoacetate, acetoacetic acid Examples thereof include ester compounds such as ethyl, and these may be used alone or in combination of two or more.

The resist underlayer film composition can be prepared by blending the above components and mixing them using a stirrer or the like. When the resist underlayer film composition contains a filler or a pigment, it can be adjusted by dispersing or mixing using a dispersing device such as a dissolver, a homogenizer, or a three roll mill.

In order to prepare a resist underlayer film from the resist underlayer film composition, for example, the resist underlayer film composition is applied onto an object to be subjected to photolithography such as a silicon substrate, and is subjected to a temperature condition of 100 to 200 ° C. After drying, a resist underlayer film is formed by a method such as heat curing under a temperature condition of 250 to 400 ° C. Next, a resist pattern is formed on this lower layer film by performing a normal photolithography operation, and a resist pattern by a multilayer resist method can be formed by performing a dry etching process with a halogen-based plasma gas or the like.

When the curable composition of the present invention is used for resist permanent film applications, in addition to the novolak type resin and the curing agent of the present invention, other resins (W), surfactants, dyes, and fillers as necessary. The composition for a resist permanent film can be obtained by adding various additives such as a crosslinking agent and a dissolution accelerator and dissolving in an organic solvent. The organic solvent used here is the same as the organic solvent used in the resist underlayer film composition.

A photolithography method using the resist permanent film composition includes, for example, dissolving and dispersing a resin component and an additive component in an organic solvent, and applying the solution on an object to be subjected to silicon substrate photolithography, and a temperature of 60 to 150 ° C. Pre-bake under the following temperature conditions. The coating method at this time may be any method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor blade coating and the like. Next, when creating the resist pattern, if the resist permanent film composition is positive, the target resist pattern is exposed through a predetermined mask, and the exposed portion is dissolved with an alkali developer. Thus, a resist pattern is formed.

The permanent film made of the resist permanent film composition is, for example, a solder resist, a package material, an underfill material, a package adhesive layer such as a circuit element, an integrated circuit element-circuit board adhesive layer, an LCD, or an OELD for semiconductor devices. Can be suitably used for thin film transistor protective films, liquid crystal color filter protective films, black matrices, spacers and the like.

Hereinafter, the present invention will be described in more detail with specific examples.

[GPC measurement conditions]
In the following examples, the content of the cyclic phenol resin intermediate (A ′) in the phenol resin intermediate is a value calculated from the area ratio of the chart of gel permeation chromatography (GPC) measured under the following conditions. .
Measuring device: “HLC-8220 GPC” manufactured by Tosoh Corporation
Column: “Shodex KF802” (8.0 mmФ × 300 mm) manufactured by Showa Denko KK + “Shodex KF802” (8.0 mmФ × 300 mm) manufactured by Showa Denko KK
+ Showa Denko Co., Ltd. “Shodex KF803” (8.0 mmФ × 300 mm) + Showa Denko Co., Ltd. “Shodex KF804” (8.0 mmФ × 300 mm)
Column temperature: 40 ° C
Detector: RI (differential refractometer)
Data processing: “GPC-8020 Model II version 4.30” manufactured by Tosoh Corporation
Developing solvent: Tetrahydrofuran Flow rate: 1.0 mL / min Sample: 0.5% by mass tetrahydrofuran solution filtered with a microfilter in terms of resin solids Injection volume: 0.1 mL
Standard sample: Monodispersed polystyrene below (Standard sample: Monodispersed polystyrene)
“A-500” manufactured by Tosoh Corporation
“A-2500” manufactured by Tosoh Corporation
"A-5000" manufactured by Tosoh Corporation
“F-1” manufactured by Tosoh Corporation
“F-2” manufactured by Tosoh Corporation
“F-4” manufactured by Tosoh Corporation
“F-10” manufactured by Tosoh Corporation
“F-20” manufactured by Tosoh Corporation

The FD-MS spectrum of the phenol resin intermediate was measured using a double-focusing mass spectrometer “AX505H (FD505H)” manufactured by JEOL Ltd.

Production Example 1 Production of Phenol Resin Intermediate (1) In a flask equipped with a thermometer, a dropping funnel, a condenser, and a stirrer, 288 parts by mass of 1-naphthol, 107 parts by mass of paraaldehyde, 500 parts by mass of 2-ethoxyethanol, The mixture was charged with 5.8 parts by mass of 95% sulfuric acid, heated to 80 ° C., and stirred for 10 hours. After completion of the reaction, 300 parts by mass of ethyl acetate and 160 parts by mass of ion-exchanged water were added, and the aqueous layer was discarded with a separatory funnel. The pH of the aqueous layer was 1. The organic layer was washed with 160 parts by mass of ion-exchanged water, and this was repeated 7 times. The pH of the water layer rejected in the final water washing was 4. The organic layer after washing with water was dried under reduced pressure with an evaporator to obtain 309 parts by mass of a phenol resin intermediate (1) (yield 91%). The content of the cyclic phenol resin intermediate (A ′) in the phenol resin intermediate (1) calculated from the GPC chart was 18%. Further, in the FD-MS spectrum, a peak of 680 indicating the presence of a compound having a value of n of 4 in the following structural formula was detected. A GPC chart of the phenol resin intermediate (1) is shown in FIG. 1, and an FD-MS chart is shown in FIG.

Production Example 2 Production of Phenol Resin Intermediate (2) A flask equipped with a thermometer, a dropping funnel, a condenser, and a stirrer was charged with 288 parts by mass of 1-naphthol, 244 parts by mass of 4-hydroxybenzaldehyde, and 500 parts by mass of 1-butanol. The mixture was charged with 14.4 parts by mass of 95% sulfuric acid, heated to 80 ° C., and stirred for 17 hours. After completion of the reaction, 300 parts by mass of ethyl acetate and 160 parts by mass of ion-exchanged water were added, and the aqueous layer was discarded with a separatory funnel. The pH of the aqueous layer was 1. The organic layer was washed with 160 parts by mass of ion-exchanged water, and this was repeated 7 times. The pH of the water layer rejected in the final water washing was 4. The organic layer after washing with water was dried under reduced pressure with an evaporator to obtain 466 parts by mass of a phenol resin intermediate (2) (yield 94%). The content of the cyclic phenol resin intermediate (A ′) in the phenol resin intermediate (2) calculated from the GPC chart was 52%. In the FD-MS spectrum, 992 peaks indicating the presence of a compound having a value of n of 4 in the following structural formula were detected. The GPC chart of the phenol resin intermediate (2) is shown in FIG. 3, and the FD-MS chart is shown in FIG.

Example 1 Production of Novolac Type Resin (1) A 1000 ml three-necked flask equipped with a cooling tube was charged with 60 parts by mass of the phenol resin intermediate (1) synthesized in Production Example 1 and 40 parts by mass of ethyl vinyl ether as a protecting group introducing agent. Thereafter, it was dissolved in 300 parts by mass of 1,3-dioxolane. After adding 0.1 part by mass of 35 wt% hydrochloric acid aqueous solution, stirring was continued at 25 ° C. for 4 hours to cause reaction. Titration with methanol was performed during the reaction, and after confirming that the methanol-dissolved component disappeared and that the protective group was introduced into almost all of the hydroxyl groups, 1 part by mass of 25 wt% aqueous ammonia solution was added. Water was added to the resulting solution for reprecipitation, and the precipitate was filtered off and vacuum dried to obtain 68 parts by mass of a novolac resin (1) as a reddish purple powder.

Example 2 Production of Novolak Type Resin (2) The same procedure as in Example 1 was conducted except that 40 parts by mass of ethyl vinyl ether was used as a protective group introducing agent, and novolac type of reddish purple powder was used. 66 mass parts of resin (2) was obtained.

Example 3 Production of Novolac Type Resin (3) The procedure of Example 1 was repeated except that 60 parts by mass of phenol resin intermediate (1) was replaced by 60 parts by mass of phenol resin intermediate (1). 72 parts by mass of powdered novolac resin (3) was obtained.

Example 4 Production of Novolac Type Resin (4) Phenol resin intermediate (1) 60 parts by mass of phenol resin intermediate (2) 60 parts by mass of phenol resin, 44 parts by mass of dihydropyran instead of 40 parts by mass of ethyl vinyl ether Except for the above, the same operation as in Example 1 was carried out to obtain 71 parts by mass of a reddish purple powder of Borac resin (4).

Comparative Production Example 1 Production of Novolak Type Resin (1 ′) Into a flask equipped with a thermometer, dropping funnel, condenser and stirrer, 160 parts by mass of 1,6-dihydroxynaphthalene, 122 parts by mass of 4-hydroxybenzaldehyde, 2- 290 parts by mass of ethoxyethanol and 1.7 parts by mass of 95% sulfuric acid were added, and the temperature was raised to 80 ° C., followed by stirring for 8 hours for reaction. After completion of the reaction, 300 parts by mass of ethyl acetate and 160 parts by mass of ion-exchanged water were added, and the aqueous layer was discarded with a separatory funnel. The pH of the aqueous layer was 1. The organic layer was washed with 160 parts by mass of ion-exchanged water, and this was repeated 7 times. The pH of the water layer rejected in the final water washing was 4. The organic layer after washing with water was dried under reduced pressure with an evaporator to obtain 247 parts by mass of a crude product. Next, 100 parts by mass of the obtained crude product was dissolved in 100 parts by mass of methanol, and then dropwise added to 300 parts by mass of ion-exchanged water with stirring to perform a reprecipitation operation. The produced | generated precipitation was filtered with a filter, the obtained filtration residue was fractionated, and it dried using the reduced pressure dryer, and obtained 60 mass parts of cyclic phenol resin intermediate bodies (1 ').

In a 100 mL two-necked flask equipped with a condenser tube, 4.4 parts by mass of the cyclic phenol resin intermediate (1 ′) obtained previously and 4.2 parts by mass of dihydropyran were charged to 30 parts by mass of 1,3-dioxolane. Dissolved. Next, 0.01 parts by mass of a 35 wt% hydrochloric acid aqueous solution was added to the reaction system solution, followed by reaction at 25 ° C. for 4 hours. After the reaction, 0.1 part by mass of a 25 wt% aqueous ammonia solution was added to the reaction system solution, and then poured into 100 parts by mass of ion-exchanged water to precipitate the reaction product. The obtained reaction product was dried under reduced pressure at 80 ° C. and 1.3 kPa to obtain 4.3 parts by mass of a novolac resin (1 ′).

Examples 5 to 8 and Comparative Example 1
The novolac resin obtained in Examples 1 to 5 and Comparative Production Example 1 was subjected to various evaluations by preparing a photosensitive composition in the following manner. The results are shown in Table 1.

Preparation of photosensitive composition 19 parts by mass of a novolak resin was dissolved in 80 parts by mass of propylene glycol monomethyl ether acetate, and 1 g of a photoacid generator was added to the solution and dissolved. This was filtered through a 0.2 μm membrane filter to obtain a photosensitive composition.
As the photoacid generator, “WPAG-336” [diphenyl (4-methylphenyl) sulfonium trifluoromethanesulfonate] manufactured by Wako Pure Chemical Industries, Ltd. was used.

Preparation of composition for heat resistance test 19 g of the novolak type resin was dissolved in 80 g of propylene glycol monomethyl ether acetate, and this was filtered through a 0.2 μm membrane filter to obtain a composition for heat resistance test.

Evaluation of Alkali Developability [ADR (nm / s)] The photosensitive composition obtained above was applied on a 5-inch silicon wafer with a spin coater to a thickness of about 1 μm, and then on a hot plate at 110 ° C. Dried for 60 seconds. Two wafers were prepared, and one of the wafers was designated as “no exposure sample”. The other was used as an “exposed sample” and irradiated with 100 mJ / cm ² of ghi line using a ghi line lamp (“Multi Light” manufactured by USHIO INC.), And then heat-treated at 140 ° C. for 60 seconds. .
Both the “non-exposed sample” and the “exposed sample” were immersed in an alkaline developer (2.38% tetramethylammonium hydroxide aqueous solution) for 60 seconds and then dried on a hot plate at 110 ° C. for 60 seconds. The film thickness of each sample before and after immersion in the developer was measured, and the value obtained by dividing the difference by 60 was defined as alkali developability [ADR (nm / s)].

Evaluation of Photosensitivity The photosensitive composition obtained above was applied on a 5 inch silicon wafer with a spin coater so as to have a thickness of about 1 μm, and dried on a hot plate at 110 ° C. for 60 seconds. A mask corresponding to a resist pattern with a line-and-space ratio of 1: 1 and a line width of 1 to 10 μm set every 1 μm is brought into close contact with this wafer, and then a ghi-line lamp (“Multi Light” manufactured by USHIO INC. )) Was used for irradiation with ghi rays, and heat treatment was performed at 140 ° C. for 60 seconds. Next, the film was immersed in an alkaline developer (2.38% tetramethylammonium hydroxide aqueous solution) for 60 seconds, and then dried on a hot plate at 110 ° C. for 60 seconds.
The exposure amount (Eop exposure amount) capable of faithfully reproducing the line width of 3 μm when the ghi line exposure amount was increased from 30 mJ / cm ² to 5 mJ / cm ² was evaluated.

Evaluation of Resolution The photosensitive composition obtained above was applied on a 5-inch silicon wafer with a spin coater to a thickness of about 1 μm, and dried on a hot plate at 110 ° C. for 60 seconds. A photomask was placed on the obtained wafer, and an alkali development operation was performed by irradiating with 200 mJ / cm ² of ghi line in the same manner as in the previous alkali developability evaluation. Use a laser microscope (Keyence Co., Ltd. “VK-X200”) to check the pattern state, and those that can be resolved at L / S = 5 μm are ○, those that are not resolved at L / S = 5 μm Was evaluated as x.

Evaluation of heat resistance The composition for heat resistance test obtained above was applied onto a 5-inch silicon wafer with a spin coater so as to have a thickness of about 1 μm, and dried on a hot plate at 110 ° C. for 60 seconds. The resin content was scraped from the obtained wafer and its glass transition temperature (Tg) was measured. The glass transition temperature (Tg) was measured using a differential scanning calorimeter (DSC) (“Q100” manufactured by TA Instruments Co., Ltd.) under a nitrogen atmosphere, a temperature range of −100 to 200 ° C., and a temperature rising temperature of 10 ° C. / Performed under the condition of minutes. The case where the glass transition temperature was 200 ° C. or higher was evaluated as “◯”, and the case where it was lower than 200 ° C. was evaluated as “X”.

Examples 9-12
For the novolak resins obtained in Examples 1 to 4 and Comparative Production Example 1, curable compositions were prepared in the following manner, and various evaluation tests were performed. The results are shown in Table 2.

Preparation of curable composition 16 g of novolak resin and 4 g of a curing agent (“1,3,4,6-tetrakis (methoxymethyl) glycoluril” manufactured by Tokyo Chemical Industry Co., Ltd.) were dissolved in 30 g of propylene glycol monomethyl ether acetate. This was filtered through a 0.2 μm membrane filter to obtain a curable composition.

Evaluation of dry etching resistance The curable composition obtained above was applied onto a 5-inch silicon wafer with a spin coater and dried on a hot plate at 110 ° C. for 60 seconds. In a hot plate having an oxygen concentration of 20% by volume, heating was performed at 180 ° C. for 60 seconds, and further heating was performed at 350 ° C. for 120 seconds to obtain a cured coated moon silicon wafer having a film thickness of 0.3 μm. The cured coating film on the wafer was subjected to CF ₄ / Ar / O ₂ (CF ₄ : 40 mL / min, Ar: 20 mL / min, O ₂ : 5 mL) using an etching apparatus (“EXAM” manufactured by Shinko Seiki Co., Ltd.). / Min Pressure: 20 Pa RF power: 200 W Processing time: 40 seconds Temperature: 15 ° C.) Etching was performed. The film thickness before and after the etching treatment at this time was measured, the etching rate was calculated, and the etching resistance was evaluated. The evaluation criteria are as follows.
○: When the etching rate is 150 nm / min or less ×: When the etching rate exceeds 150 nm / min

Claims (8)

1. The following structural formula (1)
   

   

   [Wherein α is the following structural formula (2)
   

   

   (In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, It is an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5. X is a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group. , An acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, or a trialkylsilyl group.)
   And n is an integer of 2 to 10. ]
   And a cyclic novolac resin (A) having a molecular structure represented by the formula: wherein at least one of X present in the resin is a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic group A novolak resin characterized by being either a hydrocarbon group or a trialkylsilyl group.
2. A cyclic novolac resin (A) having a molecular structure represented by the structural formula (1), and an acyclic novolac resin (B) having the structural site (α) as a repeating unit; 2. The novolac resin according to claim 1, wherein at least one of X present is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group.
3. A photosensitive composition comprising the novolac resin according to claim 1 or 2 and a photoacid generator.
4. A resist film comprising the photosensitive composition according to claim 3.
5. A curable composition comprising the novolac resin according to claim 1 or 2 and a curing agent.
6. A cured product of the curable composition according to claim 5.
7. A resist film comprising the curable composition according to claim 5.
8. The following structural formula (3) obtained by reacting the naphthol compound (a1) and the aldehyde compound (a2) as essential components
   

   

   [Wherein β is the following structural formula (4)
   

   

   (In the formula, R ¹ is any one of a hydrogen atom, an alkyl group which may have a substituent, and an aryl group which may have a substituent. R ² is independently a hydrogen atom, an alkyl group, (It is either an alkoxy group or a halogen atom, and may be bonded to any carbon atom on the naphthalene ring, and m is an integer of 1 to 5.)
   And n is an integer of 2 to 10. ]
   A part or all of the hydrogen atoms of the phenolic hydroxyl group of the phenol resin intermediate containing the cyclic phenol resin intermediate (A ′) having a molecular structure represented by: a tertiary alkyl group, an alkoxyalkyl group, an acyl group, A method for producing a novolak-type resin, which is substituted with any of an alkoxycarbonyl group, a heteroatom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

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