WO2017085068A1 - Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique - Google Patents

Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique Download PDF

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Publication number
WO2017085068A1
WO2017085068A1 PCT/EP2016/077755 EP2016077755W WO2017085068A1 WO 2017085068 A1 WO2017085068 A1 WO 2017085068A1 EP 2016077755 W EP2016077755 W EP 2016077755W WO 2017085068 A1 WO2017085068 A1 WO 2017085068A1
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WO
WIPO (PCT)
Prior art keywords
layer
organic
electrode
emitting diode
metallic
Prior art date
Application number
PCT/EP2016/077755
Other languages
German (de)
English (en)
Inventor
Tobias Hero
Richard Baisl
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2017085068A1 publication Critical patent/WO2017085068A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers

Definitions

  • An organic light-emitting diode and a method for producing an organic light-emitting diode are specified.
  • OLEDs organic light emitting diodes
  • bottom emitters that is to say organic light emitting diodes which emit light from only one surface
  • electrodes made of silver or comprising silver have a high reflectivity for
  • At least one object of certain embodiments is to provide an organic light-emitting diode that is very efficient on the one hand and has a long service life on the other hand. Another object is to provide a method for producing an organic light emitting diode.
  • the organic light-emitting diode comprises a first electrode, an organic layer stack for generating light which is arranged above the first electrode and a second electrode which is arranged above the organic layer stack.
  • a layer or an element is arranged or applied "on” or “above” another layer or another element can mean here and below that the one layer or the one element directly in direct mechanical and / or electrical contact is arranged on the other layer or the other element.
  • the one layer or the one element is arranged indirectly on or above the other layer or the other element.
  • further layers and / or elements can then be arranged between the one or the other layer or between the one or the other element.
  • light is meant here and below electromagnetic radiation which is in an ultraviolet to infrared and especially in a visible
  • Spectral range is. Light can thus preferably have spectral components in a blue to red wavelength range.
  • the first and / or the second electrode comprises a first metallic layer and a barrier layer.
  • the barrier layer is between the first metallic layer and the organic layer stack arranged.
  • the barrier layer comprises a material selected from a group comprising an inorganic metal oxide, nitride and / or carbide or an organic material.
  • the barrier layer is configured to form a barrier between the first metallic layer and the organic layer stack.
  • the barrier layer Furthermore, it is possible through the barrier layer, the
  • the organic layer may be, for example, the organic light-emitting layer or a carrier injection layer of the
  • Radiation can be free charge carriers, in particular
  • plasmon peripheral surface plasmon polaritons designate longitudinal charge carrier density oscillations which occur parallel to the plane of extent of a surface of a metallic electrode or of a surface of a metallic layer of an electrode on this surface.
  • Surface plasmons can in this case in particular at the surface of the organic light-emitting layer facing this
  • Barrier layer is the distance of the first metallic layer to the organic layer stack, in particular to increases the organic light-emitting layer and thus reduces the energy transfer and thus the excitation of plasmons or suppressed.
  • the barrier layer is in direct mechanical contact with the organic layer stack.
  • the first and / or second electrode consists of the barrier layer and the first metallic layer. In this embodiment, there is thus direct mechanical contact between the barrier layer and the first metallic layer.
  • the first electrode as used herein may firstly be an anode.
  • the second electrode is formed as a cathode.
  • the second electrode is an anode and the first electrode is a cathode.
  • Cathode means the negatively charged electrode
  • first electrical connection is permanently connected to a first electrical connection at least during operation and receives electrons via this first electrical connection.
  • Anode means the positively charged electrode which, at least during operation, is permanently connected to a second electrical connection and receives positive charge carriers (holes) via this second electrical connection.
  • organic light emitting diode for example, a
  • Electrode should be transparent and the other reflective.
  • the organic light-emitting diode can thus be embodied either as a bottom emitter or as a top emitter. Alternatively, both electrodes can be made transparent. If both electrodes are transparent, the light-emitting diode can be referred to as a transparent OLED.
  • transparent is here and below referred to a layer that is transparent to visible light, especially for light that is in operation of the organic
  • a transparent layer can be clear translucent.
  • a layer designated here as transparent has the lowest possible absorption of light.
  • the second electrode comprises or consists of a first metallic layer and a barrier layer.
  • the barrier layer is over the organic layer stack and the first metallic layer is over the barrier layer.
  • the second electrode may in this embodiment as a cathode
  • the first electrode comprises or consists of a first metallic layer and a barrier layer.
  • the barrier layer is over the first metallic layer and the organic one
  • the first electrode may be formed as an anode in this embodiment.
  • the first metallic contains
  • the first metallic layer is silver or silver and another metal. In one embodiment, the further metal is made
  • the further metal is selected from magnesium and / or aluminum.
  • Germanium, silver and nickel, silver and indium, silver and gallium or silver and aluminum preferably from silver, silver and magnesium or silver and aluminum.
  • the first layer is at least 80% by weight of silver, for example, 88% by weight.
  • the first metallic layer consists of 88% by weight of silver and 12% by weight of magnesium or
  • the first metallic layer has a layer thickness between 7 nm and 1000 nm. If the first and / or second electrode is transparent, the first metallic layer has a layer thickness
  • the first metallic layer has a layer thickness
  • the first metallic layer is preferably made of silver, silver and magnesium or silver and aluminum, more preferably of silver.
  • Silver has one
  • Reflectivity for light in the visible range of the electromagnetic spectrum for example between 450 nm to 800 nm of about 95 percent.
  • the efficiency of the organic light emitting diode can be significantly increased because absorption losses are kept low.
  • the barrier layer an interaction of the silver or an undesirable reaction of the layers of the organic
  • the first and / or second electrode can be increased by up to 20% while maintaining or improving the optoelectronic characteristics such as optical efficiency, current efficiency, external quantum efficiency and the threshold voltage. Furthermore, no shift of the color locus of the radiation emitted by the organic light emitting diode is observed.
  • the first and / or the second electrode is arranged on a substrate. Is the first and / or second electrode transparent
  • the substrate may be a steel foil.
  • the barrier layer has a layer thickness between 1 atomic layer or molecular layer and 20 nm.
  • the barrier layer preferably has a layer thickness between 3 nm and 7 nm, for example 3 nm. With these layer thicknesses of the barrier layer, it is possible to use a
  • the life of the organic light emitting diode compared to light emitting diodes in which the metallic electrode is in direct mechanical contact with the organic layer stack can be significantly increased.
  • the optoelectronic data of the organic light-emitting diode are not or only slightly influenced by these thin layer thicknesses.
  • the barrier layer is formed of an insulating material and is in particular made of an insulating material. Due to the small layer thickness of the barrier layer, it is possible that a tunnel contact between the first metallic layer and the organic layer stack, in particular with a
  • the barrier layer is formed of or consists of a conductive material
  • Barrier layer be masked around a
  • a shadow mask made of stainless steel can be used.
  • a shadow mask By applying a shadow mask, short circuits between the first and the second electrode can be prevented, in particular in the case of a barrier layer composed of a conductive material, which is applied, for example, via an ALD method, at the edge regions of the organic light-emitting diode.
  • the first or the second electrode comprises a second metallic layer.
  • the second electrode comprises or consists of a second metallic layer, a first metallic layer and a barrier layer.
  • the second metallic layer is above the organic one
  • the barrier layer is above the second metallic layer and the first metallic
  • the second layer is disposed over the barrier layer.
  • the first electrode comprises or consists of a second metallic layer, a first metallic layer and a barrier layer.
  • the barrier layer is arranged above the first metallic layer, the second metallic layer is above the first metallic layer
  • the first electrode may be preferred in this embodiment as
  • the first and / or the second electrode consists of the first metallic layer, the barrier layer and the second metallic layer.
  • the second metallic layer has direct contact with the organic layer stack.
  • the barrier layer is disposed between the first and second metallic layers.
  • the second metallic layer is next to the first metallic layer
  • Barrier layer as a barrier between the first metallic layer and the organic layer stack.
  • the second metallic layer can serve as well as protective layer.
  • it may be the organic
  • Layer stacks protect against damaging influences of subsequent application processes.
  • the organic layer stack can be protected from water pulses of an ALD method ("atomic layer deposition") for depositing the barrier layer.
  • ALD method atomic layer deposition
  • the second metallic layer is transparent. Due to the transparent formation of the second metallic layer, the second metallic layer absorbs
  • the second metallic layer hardly light, so that this layer does not adversely affect the luminance of the organic light emitting diode.
  • the second metallic layer consists of silver and magnesium, aluminum, magnesium,
  • Germanium, nickel or copper The second metallic layer preferably consists of aluminum.
  • the second metallic layer has a layer thickness between an atomic layer and 20 nm
  • the second metallic layer is transparent.
  • the second metallic layer hardly absorbs light.
  • the optoelectronic data of the organic light-emitting diode are not or only slightly influenced.
  • the barrier layer comprises or consists of an inorganic metal oxide, nitride, and / or carbide.
  • the inorganic metal oxide, nitride and / or carbide is selected from the group consisting of alumina, silica, silicon carbide, silicon nitride, silicon oxynitride, titanium oxide, zinc oxide, zirconium oxide,
  • Hafnium oxide aluminum zinc oxide and combinations thereof.
  • Zirconium oxide and hafnium oxide are insulating.
  • the inorganic metal oxide, nitride and / or carbide is selected from the group consisting of alumina, silica, silicon carbide, silicon nitride, silicon oxynitride, titania, zinc oxide, zirconia, hafnia, and combinations thereof.
  • the barrier layer is made
  • the barrier layer comprises an organic material or consists of an organic material
  • the organic material may be selected from electron or hole transporting organic materials.
  • Electron-transporting material of the barrier layer selected from a group comprising NET-18, 2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1H-benzimidazole), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalene -l-yl) -3,5-diphenyl-4H-1,2,2,4-triazole, 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo -5-yl] benzene, 4,7-diphenyl-l, 10-phenanthroline (BPhen), 3- (4-biphenylyl) -4-phenyl-5-tert-butylpheny
  • the hole-transporting material of the barrier layer is selected from a group comprising HAT-CN, F16CuPc, LG-101, ⁇ -NPD, NPB (N, N'-bis (naphthalen-1-yl) -N, -bis (phenyl) benzidine), beta-NPB N, N'-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) benzidine), TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -benzidine), spiro TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) -N,' -bis (phenyl) -benzidine), spiro-NPB (N, '-Bis ( naphthalene-1-yl) -N, '-bis (phenyl) -spiro), DMFL-TPD N,' -Bis (3-methylphenyl)
  • the second electrode comprises a first metallic layer and a barrier layer.
  • the second electrode may preferably be formed as a cathode.
  • the first electrode may be used according to this embodiment as
  • Anode may be formed and may consist of a Locherinjimonyden material.
  • a hole-injecting material any hole-injecting one known in the art may be used Material used. If the radiation-emitting device is designed, for example, as a "bottom emitter” or as a transparent OLED, then the anode is formed
  • TCO transparent conductive oxides
  • metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or
  • Indium tin oxide, Zn2SnOzi, CdSnO3, ZnSnO3, Mgln20zi, GalnO3, ⁇ 2 ⁇ 5 or In4Sn30) _2, or mixtures of different transparent conductive oxides, are, however, not limited thereto.
  • the TCOs are not necessarily subject to a stoichiometric composition and may also be p- or n-doped.
  • the first electrode comprises a first metallic layer and a barrier layer.
  • the first electrode may preferably be formed as an anode.
  • the second electrode may be used according to this embodiment as
  • Cathode can be molded and can be made from one
  • Cathode materials may also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the cathode can also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the cathode can also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the cathode can also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the cathode can also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the cathode can also contain one or more of the TCOs mentioned in the anode materials, or the cathode may also consist entirely of one of these materials.
  • the organic compound is N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl
  • Layer stack at least one organic light-emitting layer in the form of an organic electroluminescent layer, which is adapted to be in a Operating state of the organic light to light
  • Suitable materials for the organic light-emitting layer are materials which have a radiation emission due to fluorescence or phosphorescence, for example polyfluorene, polythiophene or polyphenylene or derivatives, compounds, mixtures or copolymers thereof.
  • materials which have a radiation emission due to fluorescence or phosphorescence for example polyfluorene, polythiophene or polyphenylene or derivatives, compounds, mixtures or copolymers thereof.
  • organic functional layer stack can also be one
  • the organic layer stack may comprise layers with organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or combinations thereof
  • organic functional layer stacks may be in addition to the organic light emitting layer
  • Charge carrier blocking layers are known to the person skilled in the art.
  • the organic light-emitting diode has a substrate on which the electrodes and the organic layer stack are applied.
  • the substrate may for example comprise one or more materials in the form of a layer, a plate, a foil or a laminate, which are selected from steel, glass, quartz, Plastic, metal, silicon wafers.
  • the substrate glass or / and plastic for example in the form of a glass layer, glass sheet, glass plate, plastic layer, plastic film, plastic plate or a glass-plastic laminate, on or is therefrom.
  • the substrate for example, in the case of plastic as the substrate material, one or more barrier layers have, with which the plastic material is sealed.
  • the first electrode is disposed above the substrate and is preferably in contact therewith
  • the second electrode is disposed over the first electrode.
  • a first electrode Over the electrodes and the organic layer stack, preferably over the second electrode, a
  • Encapsulation arrangement for example a
  • Thin-film encapsulation be arranged, which protects the electrodes and the organic layer stack from harmful external
  • Influences such as moisture, oxygen,
  • Hydrogen sulfide or other substances can protect.
  • the encapsulation arrangement is in direct
  • the method comprises
  • method step D) comprises the following method steps:
  • barrier layer comprises a material or consists of a material selected from a group comprising an inorganic metal oxide, nitride and / or carbide or an organic material
  • D3 application a first metallic layer on the barrier layer.
  • method step B) comprises the following method steps:
  • the barrier layer comprises a material or consists of a material selected from a group comprising an inorganic metal oxide, nitride and / or carbide or an organic material.
  • method step D) comprises a method step D1):
  • method step B) comprises a method step D3):
  • the barrier layer is formed directly on the barrier layer.
  • process step D2) follows after process step D1) and process step D3)
  • the method comprises a further method step: E) applying a shadow mask to the side surfaces of the organic layer stack.
  • Process step takes place in particular before process step D) and particularly preferably before process step D2).
  • a shadow mask before applying the barrier layer in step D2) can be prevented be that the barrier layer is deposited on the side surfaces of the organic layer stack.
  • the barrier layer is formed of a conductive material, so in the organic
  • Process step E) preferably takes place when the barrier layer in
  • Process step D2) is applied by means of ALD.
  • PVD physical vapor deposition
  • knife coating screen printing or inkjet, preferably applied by physical vapor deposition.
  • the barrier layer is in
  • ALD atomic layer deposition
  • MLD molecular layer deposition
  • method step D1) takes place when the barrier layer is applied in method step D2) by means of ALD.
  • the organic layer stack can be protected from water pulses of this method.
  • step D3) or Bl) silver is deposited or silver and magnesium, silver and aluminum, silver and germanium, silver and nickel, silver and indium or silver and gallium are deposited simultaneously.
  • FIGS 1 and 2 show schematic side views of
  • FIG. 3 shows life curves of an exemplary embodiment of an organic light-emitting diode described here in comparison with a reference.
  • FIG. 1 shows an exemplary embodiment of an organic light-emitting diode 1.
  • the light-emitting diode 1 comprises a substrate 5, for example a glass substrate.
  • a first electrode 2 is arranged on the substrate 5.
  • the first electrode 2 is formed as an anode and consists for example of ITO.
  • On The first electrode 2 is arranged an organic layer stack 3 for generating light.
  • Layer stack 3 has a planar configuration and has an organic light-emitting layer (not shown here) for generating light.
  • the organic layer stack 3 may also include a plurality of organic light-emitting layer for generating light of different or the same
  • a charge carrier generating layer is arranged between two organic light-emitting layers. Above the organic layer stack 3, a second electrode 4 is arranged.
  • the second electrode 4 is a cathode
  • the second electrode comprises a
  • the barrier layer 42 is in direct contact with the organic layer stack 3 and completely covers the surface of the organic layer stack 3 facing away from the substrate 5.
  • the barrier layer 42 has a layer thickness of 5 nm.
  • the second electrode 4 comprises a first metallic layer 43 consisting of silver. Due to the small layer thickness of the barrier layer 42 is a tunnel junction between the first metallic
  • Layer 43 is arranged over the entire surface over the entire surface of the barrier layer 42 facing away from the substrate 5 and has a thickness of 200 nm. This is the second one
  • the organic light emitting diode 1 is a bottom emitter.
  • a first metallic layer 43 of silver has a reflectivity of 95% for visible light, which is much higher than, for example, a layer of aluminum. Thus, the effectiveness and the light output of the light emitting diode 1 are particularly high.
  • the barrier layer 42 forms a barrier to an interaction or reaction of the silver of the first metallic layer 43 with the organic layer stack 3. Thus, little or no silver can penetrate into or onto the organic layer stack 3 during the lifetime of the organic light-emitting diode 1, and in particular there is no direct
  • the silver can not damage the organic layer stack.
  • a reaction of the silver at the interface of the organic layer stack can be prevented. This can be compared to LEDs without
  • Barrier layer 42 life can be increased.
  • the excitation of plasmons on the surface of the first metallic layer 43 is largely suppressed by the barrier layer 42, so that to achieve a certain
  • the second metallic layer 41 is disposed between the first metallic layer 43 and the barrier layer 42.
  • the second metallic layer 41 covers the entire surface of the organic layer stack 3 facing away from the substrate 5.
  • the second metallic layer 41 is transparent and serves as a protective layer of the organic layer stack 3, for example when the
  • FIG. 3 shows the life curves of an organic light-emitting diode according to the invention (curve with the reference symbol I) and that of a conventional organic light-emitting diode as a reference (curve with the reference symbol II).
  • the time in h is plotted on the x-axis and the relative luminance on the y-axis.
  • the LEDs are up to the second
  • the second electrode is each formed as a cathode and consists in the known, conventional light-emitting diode of the reference of a layer consisting of silver and magnesium, in direct
  • the cathode consists of a first metallic layer, a barrier layer and a second metallic layer.
  • the second metallic layer is in direct mechanical contact with the organic layer stack and the barrier layer.
  • the barrier layer is in direct mechanical contact with the first and second
  • Metallic layer is made of silver and has a
  • the barrier layer consists of Al 2 O 3 and has a layer thickness of 3 nm.
  • the second metallic layer consists of aluminum and has a layer thickness of 3 nm.
  • the organic layer stack consists in two light emitting diodes of a substrate, an anode of ITO, a hole transport layer, a
  • Electron blocking layer an organic light
  • the cathode is arranged and is in direct mechanical and electrical contact with this.
  • the thin-film encapsulation covers the side surfaces of the organic layer stack.
  • the organic light-emitting diode according to the invention shows a markedly less marked drop in relative luminance over time (curve I).
  • the light-emitting diode according to the invention still has a relative luminance of about 80% after 300 h (curve I), while the conventional organic light-emitting diode after 300 h hours only a relative luminance
  • the organic light-emitting diode according to the invention has a luminance (l eff ) of 11.5 cd / A, while the reference has a luminance of 10.5 cd / A.
  • the external quantum efficiency is 7.19% for the inventive light-emitting diode and 6.04% for the reference.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une diode électroluminescente organique. La diode électroluminescente organique comprend : - une première électrode, - un empilement de couches organiques destiné à la génération de lumière et disposé sur la première électrode, - une deuxième électrode disposée sur l'empilement de couches organiques. La première électrode et/ou la deuxième électrode comprennent une première couche métallique et une couche barrière. La couche barrière est disposée entre la première couche métallique et l'empilement de couches organiques. La couche barrière comprend un matériau sélectionné dans un groupe comportant un oxyde, nitrure et/ou carbure métallique inorganique, ou un matériau organique.
PCT/EP2016/077755 2015-11-16 2016-11-15 Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique WO2017085068A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015119772.3A DE102015119772A1 (de) 2015-11-16 2015-11-16 Organische Leuchtdiode und Verfahren zur Herstellung einer organischen Leuchtdiode
DE102015119772.3 2015-11-16

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WO2017085068A1 true WO2017085068A1 (fr) 2017-05-26

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Citations (5)

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JP3551475B2 (ja) * 1994-06-25 2004-08-04 凸版印刷株式会社 薄膜型ｅｌ素子
US20060261727A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Reduced reflectance display devices containing a thin-layer metal-organic mixed layer (MOML)
WO2010066245A1 (fr) 2008-12-11 2010-06-17 Osram Opto Semiconductors Gmbh Diode électroluminescente organique et moyen d'éclairage
CN104124358A (zh) * 2013-04-24 2014-10-29 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN104183714A (zh) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 有机电致发光装置及制备方法、显示屏及其终端

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CN101548582B (zh) * 2006-11-17 2012-11-14 法国圣-戈班玻璃公司 用于有机发光装置的电极、其酸蚀刻以及包括它的有机发光装置
DE102012210494B4 (de) * 2012-06-21 2023-12-28 Pictiva Displays International Limited Organische Leuchtdiode
DE102014102281B4 (de) * 2014-02-21 2017-01-05 Osram Oled Gmbh Verfahren zum Herstellen eines organischen optoelektronischen Bauelements und organisches optoelektronisches Bauelement
DE102014106069B4 (de) * 2014-04-30 2023-02-16 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung, Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung und Betriebsverfahren einer optoelektronischen Bauelementevorrichtung

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3551475B2 (ja) * 1994-06-25 2004-08-04 凸版印刷株式会社 薄膜型ｅｌ素子
US20060261727A1 (en) * 2005-05-20 2006-11-23 Xerox Corporation Reduced reflectance display devices containing a thin-layer metal-organic mixed layer (MOML)
WO2010066245A1 (fr) 2008-12-11 2010-06-17 Osram Opto Semiconductors Gmbh Diode électroluminescente organique et moyen d'éclairage
CN104124358A (zh) * 2013-04-24 2014-10-29 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN104183714A (zh) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 有机电致发光装置及制备方法、显示屏及其终端

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