WO2017077835A1

WO2017077835A1 - Radiographic image capturing element and method of manufacturing radiographic image capturing element

Info

Publication number: WO2017077835A1
Application number: PCT/JP2016/080433
Authority: WO
Inventors: 水村　通伸; 裕也藤森
Original assignee: 株式会社ブイ・テクノロジー
Priority date: 2015-11-06
Filing date: 2016-10-13
Publication date: 2017-05-11
Also published as: TW201717378A; JP2017090164A

Abstract

Provided is a radiographic image capturing element with which it is possible to suppress detection, as a noise component by a pixel electrode, of scintillation light that should be detected by an adjoining pixel electrode. A radiographic image capturing element according to the present invention is formed by stacking on one another: a scintillator which absorbs radiation and emits light; a TFT circuit which generates and outputs an image signal; a transparent electrode; a photoelectric conversion film which detects the emitted light via the transparent electrode and converts the detected light into an electrical signal; pixel electrodes which correspond to pixels and which receive the electrical signals converted by the photoelectric conversion film and transfer the electrical signals to the TFT circuit; and a substrate. The photoelectric conversion film has a configuration in which central regions including locations corresponding at least to a central portion of each pixel electrode have an increased photoelectric conversion efficiency with respect to the wavelength of the light emitted by the scintillator, compared with end portion regions including locations corresponding to end portions of each pixel electrode.

Description

Radiation image pickup device and method for manufacturing radiation image pickup device

The present invention relates to a radiographic image sensor that captures an image using radiation.

Conventionally, there is a radiation image pickup element for taking a so-called X-ray photograph. Such a radiographic imaging device has a structure including a scintillator that absorbs radiation and emits light, and a photodiode having a photoelectric conversion film that detects scintillation light emitted from the scintillator and converts it into an electrical signal. Patent Document 1 discloses an example of such a radiation image pickup element.

JP 2012-247327 A

By the way, in the radiographic image pickup device, it is desired to obtain a clearer radiographic image by increasing the light detection efficiency in the photoelectric conversion film corresponding to each pixel electrode.

Therefore, the present invention has been made in view of the above-described demand, and an object thereof is to provide a radiographic imaging device capable of capturing a clearer radiographic image and a manufacturing method thereof.

In order to solve the above problems, a radiographic imaging device according to an aspect of the present invention includes a scintillator that absorbs radiation and emits light, a TFT circuit that generates and outputs an image signal, a transparent electrode, and the transparent electrode A photoelectric conversion film that detects the light emission through the photoelectric conversion film and converts it into an electrical signal; and a pixel electrode corresponding to each pixel that receives the electrical signal obtained by the conversion by the photoelectric conversion film and transmits it to the TFT circuit; A radiographic image pickup device comprising a substrate and a layer, wherein the photoelectric conversion film has a central region including a portion corresponding to at least a central portion of the pixel electrode, and a portion corresponding to an end portion of the pixel electrode. The photoelectric conversion efficiency with respect to the emission wavelength of the scintillator is higher than that of the end region including

In addition, when the emission wavelength of the scintillator is more suitable for the absorption wavelength of polysilicon than the absorption wavelength of amorphous silicon, the photoelectric conversion film includes amorphous silicon formed in the end region, polysilicon formed in the center region, and It may be composed of:

In addition, when the emission wavelength of the scintillator matches the absorption wavelength of amorphous silicon rather than the absorption wavelength of polysilicon, the photoelectric conversion film includes polysilicon formed in the end region, amorphous silicon formed in the central region, and It may be composed of:

Further, the radiation image pickup device may be formed by laminating a TFT circuit, a pixel electrode, a photoelectric conversion film, a transparent electrode, and a scintillator in this order on a substrate.

In addition, a method for manufacturing a radiographic imaging device according to an aspect of the present invention includes a step of forming a TFT circuit on a substrate, and a step of forming a pixel electrode corresponding to each pixel on the side on which the TFT circuit is formed. A step of forming an amorphous silicon film as a photoelectric conversion film on the side where the pixel electrode is formed, and a central region including a portion corresponding to the central portion of each pixel electrode of amorphous silicon are annealed and converted to polysilicon. And a step of forming a transparent electrode on the side on which the photoelectric conversion film is formed, and a step of forming a scintillator that absorbs radiation and emits light on the side on which the transparent electrode is formed. It matches the absorption wavelength of polysilicon rather than the absorption wavelength of amorphous silicon.

In addition, a method for manufacturing a radiographic imaging device according to an aspect of the present invention includes a step of forming a TFT circuit on a substrate, and a step of forming a pixel electrode corresponding to each pixel on the side on which the TFT circuit is formed. The step of forming an amorphous silicon film as a photoelectric conversion film on the side where the pixel electrode is formed and the end region including the portion corresponding to the end of each pixel electrode of amorphous silicon are annealed and converted to polysilicon The step of forming a transparent electrode on the side where the photoelectric conversion film is formed, and the step of forming a scintillator that absorbs radiation and emits light on the side where the transparent electrode is formed, and the emission wavelength of the scintillator is It matches the absorption wavelength of amorphous silicon rather than the absorption wavelength of polysilicon.

In the radiographic imaging device according to one embodiment of the present invention, the central region corresponding to the central portion of the pixel electrode corresponding to each pixel is more photoelectrically sensitive to the emission wavelength of the scintillator than the end region corresponding to the end portion of the pixel electrode. It has a configuration with high conversion efficiency. Therefore, in the edge area, the light that should be detected by the adjacent pixels is detected as noise, and the image may be blurred. By reducing the photoelectric conversion efficiency of the edge area compared to the central area, the pixel The noise component contained in the electrical signal to be detected by the electrode can be reduced, and the possibility that a blurred image is generated can be suppressed.

An upper part is sectional drawing which shows the structure of the radiographic image pick-up element based on Embodiment. The middle part is a graph showing the S / N ratio in the radiation image element. The lower part is a graph showing the photoelectric conversion efficiency of the radiation image element. It is a flowchart which shows the manufacturing method of a radiographic image pick-up element. An upper part is sectional drawing which shows the structure of the conventional radiographic image pick-up element. The middle part is a graph showing the S / N ratio in a conventional radiographic image element. The lower part is a graph showing the photoelectric conversion efficiency of the radiation image element.

<Knowledge obtained by the inventors>
In the upper part of FIG. 3, a cross-sectional view showing an example of a general radiographic image pickup device 300 is shown. As shown in the upper part of FIG. 3, the radiation image pickup device 300 includes a TFT circuit 302 that converts an electrical signal into an image signal,

pixel electrodes

303 a, 303 b, and 303 c corresponding to each pixel, a photoelectric conversion film 304, on a substrate 301. A transparent electrode 305, a scintillator 306 that absorbs radiation and emits light, and a reflective film 307 that reflects light are laminated.

In the radiation image pickup device 300, the scintillator 306 absorbs radiation (not shown), and emits light starting from the

light sources

308 and 309, for example. At this time, light originating from the light source 308 should be converted into an electrical signal by the photoelectric conversion film 304 and transmitted to the pixel electrode 303b, and light originating from the light source 309 is similarly converted to an electrical signal. Should be transmitted to the pixel electrode 303c. According to the cross-sectional view shown in the upper part of FIG. 3, an electrical signal based on the light indicated by the

optical axes

308b and 308c starting from the light source 308 is transmitted to the pixel electrode 303b. Further, since the light indicated by the optical axis 308a reaches between the pixel electrode 303a and the pixel electrode 303b, an electric signal is not transmitted to any pixel electrode. On the other hand, although the electrical signal based on the light indicated by the

optical axes

309b and 309c starting from the light source 309 is transmitted to the pixel electrode 303c, the light indicated by the optical axis 309a reaches the pixel electrode 303b. Then, it is converted into an electric signal and transmitted by the pixel electrode 303b. That is, the pixel electrode 303b is in a state of detecting light that should not be detected, starting from the light source 309, and an electrical signal based on the light is a noise component.

Based on this consideration, it is considered that the S / N ratio in the radiation image pickup device 300 is like the S / N ratio graph shown in the middle part of FIG. Further, the photoelectric conversion film 304 is uniformly formed, and the photoelectric conversion efficiency is also uniform throughout the radiation image pickup device 300 as shown in the lower part of FIG. Therefore, a radiographic image is generated by receiving an electric signal mixed with a noise component as indicated by the S / N ratio in the middle of FIG. The inventors have found that the radiation image may be blurred because such a state occurs.

Therefore, in Patent Document 1, in order to avoid such a state, the photoelectric conversion film in the region located between the pixel electrodes is removed by a photolithography process so that light components that should not be detected are not detected. ing. However, there is a problem that it is troublesome to remove an unnecessary photoelectric conversion film by this photolithography process.

Therefore, the inventors have sought to find a method that makes it easier to detect unnecessary and undesired light components as noise when creating a radiation image pickup device, and has created the present invention. Hereinafter, an embodiment of a radiographic imaging device according to the present invention and a manufacturing method thereof will be described with reference to the drawings.

<Embodiment>
<Configuration>
A radiographic imaging device 100 according to an embodiment of the present invention includes a scintillator 106 that absorbs radiation and emits light, a TFT circuit 102 that generates and outputs an image signal, a transparent electrode 105, and a transparent electrode 105. A photoelectric conversion film 104 that detects light emission and converts it into an electric signal; a pixel electrode 103 corresponding to each pixel that receives an electric signal converted by the photoelectric conversion film 104 and transmits the electric signal to the TFT circuit 102; a substrate 101; The photoelectric conversion film 104 includes

end regions

141a, 142a, 142b, and 142c that include portions corresponding to at least the central portion of the pixel electrode. 141b, 141c, and 141d have higher photoelectric conversion efficiency.

FIG. 1 is a cross-sectional view showing a detailed configuration of the radiation image pickup element 100. As shown in FIG. 1, in the radiographic imaging device 100, a TFT circuit 102 is formed on a substrate 101, pixel electrodes 103a to 103c are formed thereon, and a photoelectric conversion film 104 is formed thereon. A transparent electrode 105 is formed thereon, a scintillator 106 is formed on the transparent electrode 105, and a reflective film 107 is further formed thereon. Note that in this specification, the pixel electrode is collectively referred to as the pixel electrode 103.

The substrate 101 is made of, for example, glass.

The TFT circuit 102 has a function of generating and outputting an image signal indicating one radiation image based on the electrical signal transmitted from each pixel electrode 103.

The pixel electrode 103 is an electrode corresponding to each pixel that forms a radiographic image, and transmits an electrical signal based on the electrical signal transmitted from the photoelectric conversion film 104 to the TFT circuit 102.

The photoelectric conversion film 104 detects the light emitted from the scintillator 106, converts the light into an electric signal corresponding to the light amount, and transmits the electric signal to the pixel electrode 103. The photoelectric conversion film 104 is photoelectrically converted into a

central region

142a, 142b, 142c including a portion corresponding to the central portion of the pixel electrode 103 and an

end region

141a, 141b, 141c, 141d including a portion corresponding to the end portion. It has a structure with different efficiency. Specifically, the photoelectric conversion film 104 has a structure in which the

central regions

142a, 142b, and 142c have higher photoelectric conversion efficiency than the

end regions

141a, 141b, 141c, and 141d. The

central regions

142a, 142b, 142c are realized by, for example, p-Si (polysilicon). The

end regions

141a, 141b, and 141c are realized by a-Si (amorphous silicon).

The transparent electrode 105 is an electrode that is paired with the pixel electrode and allows an electric signal generated in the photoelectric conversion film 104 to flow from the transparent electrode 105 side to the pixel electrode side.

The scintillator 106 is an element that absorbs emitted radiation and emits light, and emits so-called scintillation light. In FIG. 1, for easy understanding, the

light sources

108 and 109 are indicated by dots, and light indicated by the

optical axes

108 a, 108 b, 108 c, 109 a, 109 b, and 109 c starting from the

light sources

108 and 109 is applied to the transparent electrode 105. In fact, the scintillator 106 absorbs and emits light from the side irradiated with radiation, but in a scintillator 106, in a rod shape (cylindrical shape) at a position irradiated with radiation while reducing the amount of emitted light. Emits light.

In addition, the scintillator 106 according to the present embodiment has an emission wavelength that matches the absorption wavelength (light absorption wavelength) of polysilicon rather than the absorption wavelength (light absorption wavelength) of amorphous silicon. Here, that the wavelength is matched means that the overlapping degree of the emission wavelength with respect to one absorption wavelength is higher than the overlapping degree of the emission wavelength with respect to the other absorption wavelength. Further, that the emission wavelength of the scintillator matches the absorption wavelength of amorphous silicon or polysilicon means that the photoelectric conversion rate of the material with respect to the emission wavelength is high. The absorption wavelength of amorphous silicon is approximately 300 to 600 nm, and the absorption wavelength of polysilicon is approximately 600 to 1100 nm. That is, the absorption wavelength range of polysilicon is longer than the absorption wavelength range of amorphous silicon, and in this embodiment, the emission wavelength of scintillator 106 is in the range of 600 to 1100 nm.

The reflection film 107 is a mirror that reflects the scintillation light generated by the scintillator 106 and collects it on the photoelectric conversion film 104.

By providing the configuration shown in FIG. 1, the radiographic imaging device 100 according to the present embodiment detects an electrical signal based on scintillation light to be detected at an adjacent pixel electrode as noise at the end of the pixel electrode. However, the abundance ratio can be suppressed. More specifically, since the ratio of the noise component can be suppressed with respect to the entire electrical signal detected by the pixel electrode 103, a clearer radiation image can be obtained.

The S / N ratio in the radiation image pickup element 100 photoelectric conversion film 104 having such a configuration will be described with reference to the graph in the middle of FIG. The horizontal axis of the graph in the middle of FIG. 1 corresponds to the arrangement of the central region and the end region of the radiation image pickup element 100 shown in the upper part of FIG. Further, the graph in the middle of FIG. 1 shows the S / N ratio of the photoelectric conversion film 104 on the vertical axis. As described above, the S / N ratio varies depending on a noise component generated by detecting light from a light source that does not correspond to the pixel electrode. Accordingly, as can be seen from the middle part of FIG. 1, the central part of the pixel electrode 103 is the farthest from the other pixel electrode and is the position where the light corresponding to the other pixel electrode is most difficult to detect. The position corresponding to is the highest S / N ratio. Further, since the position corresponding to the end of the pixel electrode 103 is closest to the other pixel electrodes, the S / N ratio is the lowest.

In such a state, the radiation image pickup element 100 has the photoelectric conversion efficiency shown in the lower part of FIG. As shown in the lower part of FIG. 1, the photoelectric conversion efficiency is high at positions corresponding to the

central regions

142a, 142b, 142c of the photoelectric conversion film 104 of the radiation image pickup device 100, and corresponds to the

end regions

141a, 141b, 141c, 141d. The photoelectric conversion efficiency is low at the position where it is to be performed. Therefore, the substantial S / N ratio in the radiographic image pickup device 100 according to the present embodiment is obtained by multiplying the S / N ratio in the middle part of FIG. 1 by the photoelectric conversion efficiency in the lower part of FIG. Therefore, the ratio of the electrical signal of the noise component included in the electrical signal transmitted through the pixel electrode 103 can be reduced as compared with the conventional case. Therefore, a clearer radiographic image than conventional can be obtained.

<Method for Manufacturing Radiation Imaging Device>
Hereinafter, the manufacturing method of the radiographic imaging device 100 described above will be described with reference to FIG.

First, the substrate 101 is prepared, and the TFT circuit 102 is formed thereon (step S201). Next, the pixel electrode 103 corresponding to each pixel is formed on the TFT circuit 102 (step S202).

An amorphous silicon layer is formed on the pixel electrode 103 (step S203).

Then, uniformly irradiate the formed amorphous silicon layer to a position corresponding to the central region of each pixel electrode, and anneal it (step S203). The laser is used to irradiate amorphous silicon into polysilicon, and each pixel is output from a laser irradiation device to a 100 nm amorphous silicon layer with a wavelength of 308 nm and a laser output of 400 J / cm ^2. By irradiating the central region corresponding to the central portion of the electrode 103, the amorphous silicon is annealed. Thereby, the central region corresponding to the central portion of each pixel electrode 103 is annealed and transformed into polysilicon, and a photoelectric conversion film 104 (see FIG. 1) in which amorphous silicon and polysilicon are mixed is formed.

Next, the transparent electrode 105 is formed on the photoelectric conversion film 104 (step S205). The scintillator 106 is formed on the transparent electrode 105 (step S206). Here, it is assumed that the scintillator 106 to be formed has an emission wavelength that matches the absorption wavelength of polysilicon with respect to the emission wavelength of light that is emitted by absorbing radiation. Finally, the scintillator 106 is formed, and then the reflective film 107 is formed (step S207), and the radiation image pickup device 100 is manufactured.

<Operation of radiation image sensor>
Below, operation | movement of the radiographic image pick-up element 100 is demonstrated easily.

A part of the radiation irradiated from a radiation irradiation apparatus (not shown) is reflected and absorbed by the imaging target, and the rest is transmitted and reaches the radiation image capturing element 100. The radiation irradiated from the reflective film 107 side of the radiation image pickup device 100 passes through the reflective film 107 and is absorbed by the scintillator 106.

The scintillator 106 emits light by absorbing radiation (see the light sources 108 and 109). In the scintillator 106, the light originating from the

light sources

108 and 109 includes light directed toward the transparent electrode 105 indicated by the

optical axes

108a, 108b, and 108c, and the

optical axes

109a, 109b, and 109c. In the opposite direction, there is light that is reflected by the reflective film 107 and travels toward the transparent electrode 105. The light passes through the transparent electrode 105 and is converted into an electrical signal corresponding to the detected light amount in the photoelectric conversion film 104. In the case of the radiation image pickup device 100 shown in the upper part of FIG. 1, the light indicated by the optical axis 108b detected in the central region 142b and the light indicated by the optical axis 109c detected in the central region 142c are converted into electrical signals with high efficiency. Converted. On the other hand, the light indicated by the optical axis 108a detected in the end region 141b and the light indicated by the

optical axes

108c, 109a, and 109b detected in the end region 141c are converted into electric signals with low efficiency. Accordingly, in the case of the upper part of FIG. 1, although the light indicated by the optical axis 109a is detected by the end region 141c corresponding to the pixel electrode 103b and converted into an electric signal, the conversion efficiency is low, so the entire pixel electrode 103b The ratio with respect to the electric signal obtained by the photoelectric conversion film corresponding to is low. Therefore, the noise component of the electrical signal based on the light indicated by the optical axis 109a is reduced, so that the S / N ratio in the photoelectric conversion film 104 in the portion corresponding to the pixel electrode 103b is made higher than before. Is done.

The electrical signal obtained by the photoelectric conversion film 104 is transmitted to the TFT circuit 102 via the pixel electrodes 103a to 103c. The TFT circuit 102 generates and outputs a radiation image according to the electrical signals obtained from the pixel electrodes 103a to 103c and the coordinates of the image corresponding to the pixel electrodes.

In this way, the radiographic image capturing device 100 can capture a radiographic image that is clearer than before.

<Reference example>
In the above embodiment, a configuration example is shown in which the central region is polysilicon and the end region is amorphous silicon. As described above, this is a configuration for adjusting the emission wavelength of the scintillator 106 to the absorption wavelength of polysilicon.

Therefore, conversely, when the emission wavelength of the scintillator 106 matches the absorption wavelength of amorphous silicon rather than the absorption wavelength of polysilicon, a configuration in which the central region is amorphous silicon and the end region is polysilicon is used. To do. In this case, in order to form polysilicon in the end region, when the photoelectric conversion layer is formed, a laser annealing process is performed on the end region.

In the above description, amorphous silicon and polysilicon have been described as examples of materials that absorb radiation and emit light, but other materials may be used as long as they absorb radiation and emit light.

<Supplement>
Here, one embodiment of the radiation image pickup device according to the present invention and the effect thereof will be described.

(A) A radiographic imaging device according to an embodiment of the present invention includes a scintillator that absorbs radiation to emit light, a TFT circuit that generates and outputs an image signal, a transparent electrode, and the transparent electrode through the transparent electrode. A photoelectric conversion film that detects light emission and converts it into an electric signal; a pixel electrode corresponding to each pixel that receives an electric signal obtained by conversion by the photoelectric conversion film and transmits the electric signal to the TFT circuit; and a substrate; The photoelectric conversion film has a central region including a portion corresponding to at least a central portion of the pixel electrode, and an end portion including a portion corresponding to an end portion of the pixel electrode. The photoelectric conversion efficiency with respect to the emission wavelength of the scintillator is higher than that of the region.

As a result, even if the scintillation light to be detected by the adjacent pixel electrode is detected near the end of each pixel electrode, the ratio to the electrical signal detected by the entire pixel electrode can be reduced. A clearer radiation image can be obtained.

(B) In the radiographic imaging device according to (a) above, when the emission wavelength of the scintillator matches the absorption wavelength of polysilicon rather than the absorption wavelength of amorphous silicon, the photoelectric conversion film is formed in the end region. It may be made of amorphous silicon and polysilicon formed in the central region.

Alternatively, when the emission wavelength of the scintillator matches the absorption wavelength of amorphous silicon rather than the absorption wavelength of polysilicon, the photoelectric conversion film includes polysilicon formed in the end region and amorphous silicon formed in the central region. It may be characterized by comprising.

This makes it possible to use amorphous silicon and polysilicon, which are generally used as a photoelectric conversion film for the radiation image pickup device, so that the radiation image pickup device can be easily realized.

(C) In the radiographic image capturing device according to (a) or (b), the radiographic image capturing device includes a TFT circuit, a pixel electrode, a photoelectric conversion film, a transparent electrode, and a scintillator on a substrate. It is good also as being laminated | stacked in order.
Thereby, a radiation image pick-up element is realizable.

(D) A method of manufacturing a radiographic imaging device according to an embodiment of the present invention includes a step of forming a TFT circuit on a substrate, and a pixel electrode corresponding to each pixel is formed on the side on which the TFT circuit is formed. A step of forming an amorphous silicon film as a photoelectric conversion film on the side where the pixel electrode is formed, and annealing a central region including a portion corresponding to a central portion of each of the amorphous silicon pixel electrodes to form polysilicon. Converting, forming a transparent electrode on the side where the photoelectric conversion film is formed, and forming a scintillator that absorbs radiation and emits light on the side where the transparent electrode is formed.

Thus, unlike the conventional case, the photoelectric conversion film is appropriately formed with a portion with a high photoelectric conversion efficiency and a portion with a low photoelectric conversion film by a simple process called laser annealing without removing the end region by a photolithography process. Can do.

DESCRIPTION OF SYMBOLS 100 Radiographic image pick-up element 101 Board | substrate 102

TFT circuit

103a, 103b, 103c Pixel electrode 104 Photoelectric conversion film 105 Transparent electrode 106 Scintillator 107

Reflective film

141a, 141b, 141c,

141d End area

142a, 142b, 142c Central area

Claims

A scintillator that absorbs radiation and emits light;
A TFT circuit that generates and outputs an image signal;
A transparent electrode;
A photoelectric conversion film that detects the light emission through the transparent electrode and converts it into an electrical signal;
A pixel electrode corresponding to each pixel that receives an electrical signal obtained by conversion by the photoelectric conversion film and transmits the electrical signal to the TFT circuit;
A substrate,
A radiographic image pickup device comprising:
The photoelectric conversion film has a photoelectric conversion efficiency with respect to a light emission wavelength of the scintillator in which a central region including a portion corresponding to at least a central portion of the pixel electrode is more than an end region including a portion corresponding to an end of the pixel electrode. The radiation image pick-up element characterized by having high composition.
When the emission wavelength of the scintillator matches the absorption wavelength of polysilicon rather than the absorption wavelength of amorphous silicon,
The radiographic imaging device according to claim 1, wherein the photoelectric conversion film is made of amorphous silicon formed in the end region and polysilicon formed in the central region.
When the emission wavelength of the scintillator matches the absorption wavelength of amorphous silicon rather than the absorption wavelength of polysilicon,
The radiographic imaging device according to claim 1, wherein the photoelectric conversion film is made of polysilicon formed in the end region and amorphous silicon formed in the central region.
The radiation image pickup element is on the substrate.
The radiation image pickup device according to claim 1, wherein the TFT circuit, the pixel electrode, the photoelectric conversion film, the transparent electrode, and the scintillator are stacked in this order.
Forming a TFT circuit on the substrate;
Forming a pixel electrode corresponding to each pixel on the side on which the TFT circuit is formed;
Forming an amorphous silicon film as a photoelectric conversion film on the side on which the pixel electrode is formed;
Annealing the central region including a portion corresponding to the central portion of each of the pixel electrodes of the amorphous silicon to convert it into polysilicon;
Forming a transparent electrode on the side where the photoelectric conversion film is formed;
Forming a scintillator that absorbs radiation and emits light on the side on which the transparent electrode is formed,
The method of manufacturing a radiographic imaging element in which the emission wavelength of the scintillator is more suitable for the absorption wavelength of the polysilicon than the absorption wavelength of the amorphous silicon.
Forming a TFT circuit on the substrate;
Forming a pixel electrode corresponding to each pixel on the side on which the TFT circuit is formed;
Forming an amorphous silicon film as a photoelectric conversion film on the side on which the pixel electrode is formed;
Annealing the end region including the portion corresponding to the end of each of the pixel electrodes of the amorphous silicon to convert it to polysilicon;
Forming a transparent electrode on the side where the photoelectric conversion film is formed;
Forming a scintillator that absorbs radiation and emits light on the side on which the transparent electrode is formed,
The method of manufacturing a radiographic imaging element in which the emission wavelength of the scintillator is more suitable for the absorption wavelength of the amorphous silicon than the absorption wavelength of the polysilicon.