WO2017069574A1 - Silicon carbide composite and power storage device including same - Google Patents
Silicon carbide composite and power storage device including same Download PDFInfo
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- WO2017069574A1 WO2017069574A1 PCT/KR2016/011918 KR2016011918W WO2017069574A1 WO 2017069574 A1 WO2017069574 A1 WO 2017069574A1 KR 2016011918 W KR2016011918 W KR 2016011918W WO 2017069574 A1 WO2017069574 A1 WO 2017069574A1
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- silicon carbide
- core
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- carbide composite
- power storage
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 85
- 239000002131 composite material Substances 0.000 title claims abstract description 67
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- 229910052799 carbon Inorganic materials 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
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- 239000007789 gas Substances 0.000 claims description 10
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- 239000000377 silicon dioxide Substances 0.000 claims description 5
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- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010453 quartz Substances 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
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- OKTJSMMVPCPJKN-YPZZEJLDSA-N carbon-10 atom Chemical compound [10C] OKTJSMMVPCPJKN-YPZZEJLDSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
Definitions
- the silicon carbide powder forms a silicon carbide composite alone or by being mixed with other material and the silicon carbide composite can be applied to the electrode layers of various power storage devices, such as a super capacitor, an ultra capacitor.
- silicon carbide composite may include a core 100 and a shell 200.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Carbon And Carbon Compounds (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
The silicon carbide composite according to the present embodiments includes a core and a shell which surrounds the core. Densities of the core and the shell may be different from each other. And a method for producing silicon carbide composite comprises preparing a carbon source and a silicon source, generating carbon by thermal decomposition of the carbon source, and synthesizing the carbon and the silicon source, wherein the synthesizing of the carbon and the silicon source is conducted at a temperature of 1000 ℃ to 1700 ℃.
Description
The present embodiment relates silicon carbide composite and a power storage device including the same.
Recently, silicon carbide powder is used as a semiconductor material for various electronic devices and purposes. The silicon carbide powder is particularly useful due to the physical strength and high resistance to chemical attack. The silicon carbide powder has also radiation hardness, a relatively wide band gap, high saturated electron drift velocity, high operating temperature, and excellent electronic properties including absorption and emission of high energy protons in the blue, violet, and ultra-violet region of a spectrum.
A method for producing the silicon carbide powder has a variety of methods and, as one example, is used the Acheson method, a carbon thermal reduction method, a liquid polymer pyrolysis method, a CVD method or the like. Particularly, synthesis method of high purity silicon carbide powder is used the liquid polymer pyrolysis method or the carbon thermal reduction method.
The silicon carbide powder forms a silicon carbide composite alone or by being mixed with other material and the silicon carbide composite can be applied to the electrode layers of various power storage devices, such as a super capacitor, an ultra capacitor.
At this time, in a case of being applied to these electrode layers, a specific surface area, a capacity per unit volume, and the like can be a significant factor in determining the efficiency and a storage capacity of the power storage device.
Accordingly, silicon carbide composite is required of which the specific surface area and the capacity per unit volume are improved.
The present embodiment provides silicon carbide composite having improved density and a power storage device including the same.
The silicon carbide composite according to the present embodiment includes a core and a shell which surrounds the core. Densities of the core and the shell may be different from each other.
Silicon carbide composite according to the embodiment is capable of improving a density of electrode material. In other words, the overall density of the silicon carbide composite, as a core is capable of being improved according to formation of silicon carbide crystal having a large molecular weight.
In addition, the silicon carbide composite according to the embodiment is capable of increasing a specific surface area of the electrode material. In other words, the overall specific surface area of the silicon carbide composite is capable of being improved according to formation of carbon crystal including pores on the shell.
Accordingly, power storage device having a large capacity can be realized since an electrical capacity is improved when the silicon carbide composite according to the embodiment is applied to the power storage device such as super capacitors and ultra capacitors.
In addition, when forming an electrode layer, additional conductive material cannot be added, since the silicon carbide composite plays a role as conductive material at the same time.
Fig. 1 is a perspective view of silicon carbide composite according to an embodiment.
Fig. 2 is a cross sectional view of the silicon carbide composite according to the embodiment.
Fig. 3 is a view illustrating process flow chart of a method for producing silicon carbide composite according to the embodiment.
Fig. 4 is a sectional view of a power storage device to which the silicon carbide composite is applied according to the embodiment.
Fig. 5 is a sectional view of an anode electrode of the power storage device.
Fig. 6 is a graph illustration a capacity of the power storage device according to embodiments and comparative examples.
In the embodiments described, in a case where each of layers (films), regions, patterns or structures is formed "on" or "under" a substrate, each of layers (films), regions, pads, or patterns, the "on" or the "under" includes both a case where each of layers (films), regions, patterns or structures is "directly" formed "on" or "under" a substrate, each of layers (films), regions, pads, or patterns and a case where each of layers (films), regions, patterns or structures is formed "on" or "under" a substrate, each of layers (films), regions, pads, or patterns "with another layer being inserted therebetween (indirectly)". Reference regarding on or under of each of layers is described based on the drawings.
Actual sizes are not entirely reflected, since a thickness and a size of each layer (film), regions, patterns or structures in the figures may be modified for the sake of clarity and convenience of description.
Hereinafter, with reference to the drawings attached, an embodiment of the present invention will be in detail described as follows.
With reference to Fig. 1 to Fig. 3, silicon carbide composite according to the embodiment may include a core 100 and a shell 200.
The core 100 may include carbon and silicon. Specifically, the core 100 may include silicon carbide (SiC). For, example, the core 100 may include at least one of beta-phase silicon carbide and alpha-phase silicon carbide.
The core 100 may be in a spherical shape. However, the embodiment is not limited to this and the core 100 may be formed in a shape as a polygonal shape such as a triangular shape, a rectangular shape, a circle shape, an ellipse shape, or the like.
A particle diameter of the core 100 may be few micrometers (㎛). Specifically, The particle diameter of the core 100 may be about 1 ㎛ to about 100 ㎛. In a case where the size of the core 100 is less than about 1 ㎛, the overall density of the silicon carbide composite is reduced and then the capacity per unit volume may be decreased when the silicon carbide composite is applied to the power storage device. In addition, the size of the core 100 is greater than about 100 ㎛, conductivity may be reduced when the silicon carbide composite is applied to the power storage device.
The shell 200 may be disposed on the core 100. Specifically, the shell 200 may be disposed to surround the core 100. The shell 200 may be disposed to be in contact with the core 100. In other words, the core 100 and the shell 200 form an interface. Alternatively, the core 100 and the shell 200 are in contact with each other.
The shell 200 may be include the core 100 and another material. Specifically, the shell 200 may include carbon.
Pores P may be formed in the shell 200 by a irregularly self-assembled carbon structure. In other words, the shell 200 may a porous structure.
Specific surface area of the core 100 and specific surface area of the shell 200 may be different from each other.
Specifically, the specific surface area of the shell 200 may be greater than the specific area of the core 100. In other words, the specific surface area of the shell 200 having a porous structure may be increased by the pores. Accordingly, the specific surface area of the shell 200 may be greater than the specific area of the core 100.
the density of the core 100 and the density of the shell 200 may be different from each other.
Specifically, the density of the core 100 may be greater than the density of the shell 200. In other words, the density of the core 100 including silicon carbide may be greater than the density of the shell 200 including carbon.
The molecular weight of the core 100 and the molecular weight of the shell 200 may be different from each other.
Specifically, the molecular weight of the core 100 may be greater than the molecular weight of the shell 200. In other words, the molecular weight of the core 100 including silicon carbide may be greater than the molecular weight of the shell 200 including carbon.
The core 100 and the shell 200 may has a predetermined weight ratio. The weight ratio of the core 100 and the shell 200 may be about 2:8 to about 8:2. Specifically, the core 100 may be include about 20 weight% to about 80 weight% with respect to the overall silicon carbide composite.
In a case where the weight ratio of the core 100 is less than about 20 weight% with respect to the overall silicon carbide composite, the overall density of the silicon carbide composite is reduced and then the capacity per unit volume may be decreased when the silicon carbide composite is applied to the power storage device.
In addition, In a case where the weight ratio of the core 100 is greater than about 80 weight% with respect to the silicon carbide composite, that is, in a case where the weight ratio of the shell 200 is less than about 20 weight%, the specific surface area of the silicon carbide composite is reduced and then the capacity per unit volume may be reduced when the silicon carbide composite is applied to the power storage device.
Hereinafter, with reference to Fig. 3, a method for producing silicon carbide composite according to the embodiment will be described.
With reference to Fig. 3, a method for producing silicon carbide composite according to the embodiment may include preparing a carbon source and a silicon source (ST10), carbonizing the carbon source (ST20) and synthesizing the carbon source and the silicon source (ST30).
The preparing a carbon source and a silicon source (ST10) may prepare a raw material for producing a silicon carbide composite.
The carbon source (C source) may include organic carbon compounds. The carbon source may include at least one organic carbon compound of methane gas, ethane gas, propane gas, butane gas, methanol, ethanol, propanol, butanol, ethylene glycol, polyethylene glycol, dextrin, cellulose, lignin, pitch, xylene, polyurethane, polyacrylonitrile or polyvinyl alcohol, polyvinyl acetate. However, the embodiment is not limited to this.
The silicon source (Si source) may include a various material which is capable of providing silicon. As an example, the silicon source may include silica. In addition, Silica powder, silica sol, silica gel, quartz powder, or the like may be used as the silicon source, in addition to silica. However, the embodiment is not limited to this and organic silicon compound including silicon may be used as a silicon source.
Subsequently, carbon my generated by carbonizing the carbon source in the carbonizing the carbon source (ST20). For example, the carbon source may be injected to the chamber in an aerosol form after the silicon source is disposed on the chamber. At this time, the carbon source may be injected to an inside of the chamber can be injected into the chamber in an inert gas atmosphere and the conditions of a temperature of about 1400 ℃.
Subsequently, in the synthesizing the carbon source and the silicon source (ST30), the injected carbon source is decomposed and is transformed into carbon gas or carbon particles through a recrystallization process. The transformed carbon source can cause two reactions. Specifically, the transformed carbon source may be converted into a carbon crystal structure such as porous graphite, graphene, and carbon nanotube by a reaction which generates silicon carbide by being in contact with the silicon particles and then carbonating silicon and self-assembly of the carbon source having an irregular shape which is excessively in contact with a surface of silicon or silicon carbide.
Pores are formed between the carbon crystal structures in the shell. Accordingly, the shell may generally have the porous crystal structure.
The synthesizing the carbon source and the silicon source may proceed at the temperature of greater than about 1000℃. Specifically, the synthesizing the carbon source and the silicon source may proceed at the temperature between about 1000℃ and about 1700℃. More specifically, the synthesizing the carbon and the silicon source may proceed at the temperature between about 1000℃ and about 1400℃.
In a case where the synthesizing the carbon source and the silicon source proceeds at the temperature of less than about 1000℃, since, in a reaction step, silicon carbide or unreacted silicon, that is only core is formed and according to this, there is no increase effect of the specific surface area which is increased by the shell, the capacity per unit volume may be reduced when the silicon carbide composite manufactured according to this is applied to the power storage device.
In addition, in a case where the synthesizing the carbon source and the silicon source proceeds at the temperature of greater than about 1700℃, the overall silicon source is gasified during the reaction and the core including silicon carbide may not be formed.
Hereinafter, with reference to Fig. 4 and Fig. 5, a power storage device to which silicon carbide composite according to the embodiment is applied will be described.
With reference to Fig. 4 and Fig. 5, the power storage device according to the embodiment may include an anode electrode, a cathode electrode, an electrolyte and a separator which are disposed between the anode electrode and the cathode electrode.
The anode electrode and the cathode electrode may include a substrate 10 and an electrode layer 20 on the substrate 10. The silicon carbide composite according to the embodiment may be applied to the electrode layer 20.
For example, the substrate 10 may include a first substrate and a second substrate. A first electrode layer including the anode electrode may be disposed on the first substrate and a cathode electrode is included on the second substrate and a second electrode layer which is disposed to be spaced apart from the first electrode layer may be disposed on the second substrate.
The substrate may include metal. Specifically, the substrate may include aluminum (Al), copper (Cu), nickel (Ni) or alloys thereof.
Specifically, the electrode layer 20 may be formed by printing, coating or stretching electrode material which is mixed silicon carbide composite and a binder on the substrate 10. The electrode layer 20 may be formed in a thickness of about 100 ㎛ to about 500 ㎛ on the substrate 10.
The binder may include at least one of polyvinylidene Fluoride(PVDF), Polytetrafluoroethylene(PTFE), carboxymethyl cellulose(CMC) and styrene-butadiene rubber (SBR), as a material for printing, coating or stretching the silicon carbide composite on the substrate 10.
With reference to Fig. 5, the electrode layer 20 may be disposed in a thickness (T) of about 100 ㎛ to about 500 ㎛ on the substrate 10. In a case where the thickness of the electrode layer 20 is disposed to less than about 100 ㎛, the capacity of the power storage device may be reduced, the resistance thereof increases and thus output characteristics thereof may be reduced.
The electrode layer 20 may further include conductive material. The conductive material may play a role which smoothes movement of electrons of the electrode layer. However, the embodiment is not limited to this and the electrode layer 20 may not include the conductive material and the silicon carbide composite is capable of also playing a role as the conductive material.
In addition, the electrolyte 30 and the separator 40 which is preventing contact between the anode electrode 21 and the cathode electrode 22 may be disposed between the anode electrode 21 and the cathode electrode 22.
The silicon carbide composite according to the embodiment is capable of improving a density of electrode material. In other words, the overall density of the silicon carbide composite, as a core, is capable of being improved according to formation of silicon carbide crystal having a large molecular weight.
in addition, the silicon carbide composite according to the embodiment is capable of being increased a specific surface area of the electrode material. In other words, the overall specific surface area of the silicon carbide composite is improved according to formation of carbon crystal including pores on the shell.
Accordingly, the power storage device having a large capacity can be realized since an electrical capacity is improved when the silicon carbide composite according to the embodiment applies to the power storage device such as super capacitors and ultra capacitors.
In addition, when forming an electrode layer, additional conductive material may not be added, since the silicon carbide composite plays a role as conductive material at the same time.
Hereinafter, the present invention will be described in more detail through a method for producing silicon carbide composite according to embodiments and comparative examples. The embodiments and the comparative examples only provide as examples in order to describe the present invention in more detail. Accordingly, the present invention is not limited to the embodiments and the comparative examples.
Embodiment 1
Silicon powder is prepared as a silicon source and ethanol gas is prepared as a carbon source.
Subsequently, the ethanol gas is injected as an aerosol shape through a injecting port, after the silicon power is input in the chamber. At this time, the ethanol gas may be injected under the temperature of about 1000℃ and argon (Ar) gas atmosphere.
Subsequently, after the temperature of the chamber is increased to the temperature of about 1000℃ and then after a synthesis reaction of a carbon source and a silicon source is performed, the component is analyzed through an X-ray diffraction analyzer, and the specific surface area of the silicon carbide composite after reaction is measured.
Embodiment 2
After the temperature of the chamber is increased to the temperature of about 1400℃ and then after a synthesis reaction of a carbon source and a silicon source is performed in the same manner as in Embodiment 1 except that the synthesis reaction of the silicon source and the carbon source is performed, the component is analyzed through an X-ray diffraction analyzer, and the specific surface area of the silicon carbide composite after reaction is measured.
Comparative Example 1
After the temperature of the chamber is increased to the temperature of about 800℃ and then after a synthesis reaction a carbon source and a silicon source is performed in the same manner as in Embodiment 1 except that the synthesis reaction of the silicon source and the carbon source is performed, the component is analyzed through an X-ray diffraction analyzer, and the specific surface area of the silicon carbide composite after reaction is measured,
Comparative Example 2
After the temperature of the chamber is increased to the temperature of about 1700℃ and then after a synthesis reaction of a carbon source and a silicon source is performed, the component is analyzed through an X-ray diffraction analyzer, and the specific surface area of the silicon carbide composite after reaction is measured.
| XRD component analysis | specific surface area(㎡/g) | density(g/cc) | ||
| Embodiment 1 | silicon, silicon carbide | 1044 | 0.83 | |
| Embodiment 2 | silicon carbide | 1590 | 0.81 | |
| Comparative Example 1 | silicon, silicon carbide | 187 | 1.2 | |
| | carbon | 10 | 0.5 |
With reference to Table 1, we can see that Embodiment 1 and Embodiment 2 include a core which includes silicon carbide by the carbon source and the silicon source sufficiently being reacted and a shell which includes carbon and is formed pores and has sufficient specific surface area by shell.
In addition, with reference to Comparative Example 1, we can see that the specific surface area is small by the shell is not sufficiently formed. In addition, in a case of Comparative Example 2, the silicon source is vaporized before reaction between the carbon source by high temperature process and the silicon source and then silicon carbide is not formed and the specific surface area is small.
Silicon carbide composite which is produced according to Embodiment 1 mixes with polyvinylidene fluoride as a binder and applies the mixed material on aluminum base material and then forms the anode electrode and the cathode electrode.
Subsequently, the power storage device is manufactured by aqueous or non-aqueous electrolyte and a separator being disposed between the anode electrode and the cathode electrode.
Subsequently, capacity per unit volume of the power storage device is measured.
The power storage device is manufactured in the same manner as in Embodiment 3 except that silicon carbide composite which is manufactured according to Embodiment 2 is used.
Subsequently, capacity per unit volume of the power storage device is measured.
Comparative Example 3
The power storage device is manufactured in the same manner as in Embodiment 3 except that silicon carbide composite which is manufactured according to Comparative Example 1 is used.
Subsequently, capacity per unit volume of the power storage device is measured.
Comparative Example 4
The power storage device is manufactured in the same manner as in Embodiment 3 except that silicon carbide composite which is manufactured according to Comparative Example 2 is used.
Subsequently, capacity per unit volume of the power storage device is measured.
Comparative Example 5
The power storage device is manufactured in the same manner as in Embodiment 3 except that activated carbon, carbon black, and a binder are mixed with each other, as electrode material.
Subsequently, capacity per unit volume of the power storage device is measured.
| Electrical capacity per unit volume (F/cc) | |
| |
10 |
| |
18 |
| Comparative Example 3 | 3 |
| Comparative Example 4 | 1 |
| Comparative Example 5 | 14 |
With reference to Table 2 and Fig. 6, we can see that the electrical capacity per unit volume of the power storage devices of Embodiment 3 and Embodiment 4 is greater than those of power storage devices according to the Comparative examples.
It is described with reference to the embodiments above, but it is illustrative only and is not intended to limit the present invention. Those of ordinary skill in the art belonging to the present invention will recognize that various modifications and applications which are not illustrated in the above are possible without departing from the essential characteristics of this embodiment. For example, each component which is specifically described in the embodiments can be modified and performed. Differences relating to these modifications and applications should have to be construed as being included in the scope of the present invention set out in the appended claims.
Claims (20)
- Silicon carbide composite, comprising:a core; anda shell which surrounds the core,wherein densities of the core and the shell are different from each other.
- The silicon carbide composite according to claim 1,wherein the density of the core is greater than that of the shell.
- The silicon carbide composite according to claim 1,wherein the core includes silicon carbide, and the shell includes carbon.
- The silicon carbide composite according to claim 3,wherein a weight ratio of the core and the shell is 2:8 to 8:4.
- The silicon carbide composite according to claim 1,wherein a plurality of pores is formed on the shell.
- The silicon carbide composite according to claim 1,wherein molecular weights of the core and the shell are different from each other.
- The silicon carbide according to claim 6,wherein the molecular weight of the core is greater than that of the shell.
- A method for producing silicon carbide composite, comprising:preparing a carbon source and a silicon source;generating carbon by thermal decomposition of the carbon source; andsynthesizing the carbon and the silicon source,wherein the synthesizing the carbon and the silicon source is conducted at a temperature of 1000℃ to 1700℃.
- The method for producing silicon carbide composite according to claim 8,wherein the carbon source includes methane gas, ethane gas, propane gas, butane gas, methanol, ethanol, propanol, butanol, ethylene glycol, polyethylene glycol, dextrin, cellulose, lignin, pitch, xylene, polyurethane, polyacrylonitrile, polyvinyl alcohol, or polyvinyl acetate.
- The method for producing silicon carbide composite according to claim 8,wherein the silicon source includes silica, silica powder, silica sol, silica gel or quartz powder.
- A power storage device, comprising:a first substrate;a first electrode layer on the first substrate;a second substrate which is disposed to be spaced apart from the first substrate;a second electrode layer on the second substrate; andelectrolyte between the first electrode layer and the second electrode layer,wherein silicon carbide composite is included in the first electrode layer and the second electrode layer,wherein the silicon carbide composite comprisinga core; anda shell which surrounds the core,wherein densities of the core and the shell are different from each other.
- The power storage device according to claim 11,wherein the electrode layers further include conductive material.
- The power storage device according to claim 11,wherein density of the silicon carbide composite is 0.5 g/cc to 1.5 g/cc.
- The power storage device according to claim 11,wherein the density of the core is greater than that of the shell.
- The power storage device according to claim 11,wherein the core includes silicon carbide, and the shell includes carbon.
- The power storage device according to claim 15,wherein a weight ratio of the core and the shell is 2:8 to 8:4.
- The power storage device according to claim 11,wherein a plurality of pores is formed on the shell.
- The power storage device according to claim 11,wherein molecular weights of the core and the shell are different from each other.
- The power storage device according to claim 18,wherein molecular weight of the core is greater than that of the shell.
- The power storage device according to claim 11,wherein the first electrode layer is an anode electrode, andwherein the second electrode layer is a cathode electrode.
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| KR1020150146998A KR20170046538A (en) | 2015-10-21 | 2015-10-21 | Silicon carbide composite and power strage divice |
| KR10-2015-0146998 | 2015-10-21 |
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| CN108706977A (en) * | 2018-06-04 | 2018-10-26 | 陕西固勤材料技术有限公司 | A kind of shove charge method of silicon carbide reaction-sintered |
| US20230390746A1 (en) * | 2022-06-23 | 2023-12-07 | Guangdong University Of Technology | Silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and preparation thereof |
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| US20150200316A1 (en) * | 2012-08-10 | 2015-07-16 | Dimerond Technologies, Inc. | Solar cells having nanowire titanium oxide and/or silicon carbide cores and graphene exteriors |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108706977A (en) * | 2018-06-04 | 2018-10-26 | 陕西固勤材料技术有限公司 | A kind of shove charge method of silicon carbide reaction-sintered |
| US20230390746A1 (en) * | 2022-06-23 | 2023-12-07 | Guangdong University Of Technology | Silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and preparation thereof |
| US11969716B2 (en) * | 2022-06-23 | 2024-04-30 | Guangdong University Of Technology | Silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and preparation thereof |
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| KR20170046538A (en) | 2017-05-02 |
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