WO2017052562A1 - Methods of forming backside self-aligned vias and structures formed thereby - Google Patents

Methods of forming backside self-aligned vias and structures formed thereby Download PDF

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Publication number
WO2017052562A1
WO2017052562A1 PCT/US2015/052033 US2015052033W WO2017052562A1 WO 2017052562 A1 WO2017052562 A1 WO 2017052562A1 US 2015052033 W US2015052033 W US 2015052033W WO 2017052562 A1 WO2017052562 A1 WO 2017052562A1
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WIPO (PCT)
Prior art keywords
source
drain
drain contact
coupled
device layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/US2015/052033
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French (fr)
Inventor
Patrick Morrow
Mauro J. Kobrinsky
Kimin JUN
Il-Seok Son
Paul B. Fischer
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Intel Corp
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Intel Corp
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Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to DE112015006959.3T priority Critical patent/DE112015006959T5/en
Priority to US15/754,804 priority patent/US10367070B2/en
Priority to PCT/US2015/052033 priority patent/WO2017052562A1/en
Priority to TW109134264A priority patent/TWI757900B/en
Priority to TW105125329A priority patent/TWI706469B/en
Publication of WO2017052562A1 publication Critical patent/WO2017052562A1/en
Anticipated expiration legal-status Critical
Priority to US16/457,728 priority patent/US10797139B2/en
Ceased legal-status Critical Current

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Definitions

  • Microelectronic devices such as monolithic integrated circuits (ICs), for example, may include a number of transistors, such as metal oxide semiconductor field effect transistors (MOSFETs) fabricated over a substrate, such as a silicon wafer.
  • MOSFETs metal oxide semiconductor field effect transistors
  • a substrate such as a silicon wafer.
  • MOSFETs metal oxide semiconductor field effect transistors
  • FIG. 1 represents a perspective view of a structure according to embodiments.
  • FIGS. 2a-2p represent side cross sectional views of structures according to
  • FIG. 3 represents a cross sectional view of a structure according to embodiments.
  • FIG. 4 represents a flow chart of a method according to embodiments.
  • FIG. 5 represents an interposer implementing one or more embodiments.
  • FIG. 6 represents a schematic of a system according to embodiments.
  • Implementations of the embodiments herein may be formed or carried out on a substrate, such as a semiconductor substrate.
  • the semiconductor substrate may be a crystalline substrate formed using a bulk silicon or a silicon-on-insulator substructure.
  • the semiconductor substrate may be formed using alternate materials, which may or may not be combined with silicon, that include but are not limited to germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, indium gallium arsenide, gallium antimonide, or other combinations of group III-V or group IV materials.
  • any material that may serve as a foundation upon which a semiconductor device may be built falls within the spirit and scope.
  • MOSFET metal-oxide-semiconductor field-effect transistors
  • the MOS transistors may be planar transistors, nonplanar transistors, or a combination of both.
  • Nonplanar transistors include FinFET transistors such as double-gate transistors and tri-gate transistors, and wrap-around or all-around gate transistors such as nanoribbon and nanowire transistors.
  • Each transistor may include a gate stack formed of at least two layers, for example, a gate dielectric layer and a gate electrode layer.
  • the gate dielectric layer may include one layer or a stack of layers.
  • the one or more layers may include silicon oxide, silicon dioxide (Si0 2 ) and/or a high-k dielectric material.
  • the high-k dielectric material may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc.
  • high-k materials that may be used in the gate dielectric layer include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.
  • an annealing process may be carried out on the gate dielectric layer to improve its quality when a high-k material is used.
  • the gate electrode layer may be formed on the gate dielectric layer and may consist of at least one P-type workfunction metal or N-type workfunction metal, depending on whether the transistor is to be a PMOS or an NMOS transistor.
  • the gate electrode layer may consist of a stack of two or more metal layers, where one or more metal layers are workfunction metal layers and at least one metal layer is a fill metal layer.
  • metals that may be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide.
  • a P-type metal layer will enable the formation of a PMOS gate electrode with a workfunction that is between about 4.9 eV and about 5.2 eV.
  • metals that may be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, and carbides of these metals such as hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide.
  • An N-type metal layer will enable the formation of an NMOS gate electrode with a workfunction that is between about 3.9 eV and about 4.2 eV.
  • the gate electrode may consist of a "U"-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate.
  • at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate.
  • the gate electrode may consist of a combination of U-shaped structures and planar, non-U-shaped structures.
  • the gate electrode may consist of one or more U- shaped metal layers formed atop one or more planar, non-U-shaped layers.
  • a pair of sidewall spacers may be formed on opposing sides of the gate stack that bracket the gate stack.
  • the sidewall spacers may be formed from a material such as silicon nitride, silicon oxide, silicon carbide, silicon nitride doped with carbon, and silicon oxynitride. Processes for forming sidewall spacers may include deposition and etching process steps. In an alternate implementation, a plurality of spacer pairs may be used, for instance, two pairs, three pairs, or four pairs of sidewall spacers may be formed on opposing sides of the gate stack.
  • Source and drain regions may be formed within the substrate adjacent to the gate stack of each MOS transistor.
  • the source and drain regions are generally formed using either an implantation/diffusion process or an etching/deposition process.
  • dopants such as boron, aluminum, antimony, phosphorous, or arsenic may be ion-implanted into the substrate to form the source and drain regions.
  • An annealing process that activates the dopants and causes them to diffuse further into the substrate typically follows the ion implantation process.
  • the substrate may first be etched to form recesses at the locations of the source and drain regions.
  • An epitaxial deposition process may then be carried out to fill the recesses with material that is used to fabricate the source and drain regions.
  • the source and drain regions may be fabricated using a silicon alloy such as silicon germanium or silicon carbide.
  • the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorous.
  • the source and drain regions may be formed using one or more alternate semiconductor materials such as germanium or a group III-V material or alloy.
  • one or more layers of metal and/or metal alloys may be used to form the source and drain regions.
  • ILD interlayer dielectrics
  • the ILD layers may be formed using dielectric materials known for their applicability in integrated circuit structures, such as low-k dielectric materials. Examples of dielectric materials that may be used include, but are not limited to, silicon dioxide (Si0 2 ), carbon doped oxide (CDO), silicon nitride, organic polymers such as perfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass (FSG), and organosilicates such as silsesquioxane, siloxane, or organo silicate glass.
  • the ILD layers may include pores or air gaps to further reduce their dielectric constant.
  • Those methods/structures may include forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material.
  • the self- aligned vias/contacts of the embodiments herein provide interconnect structures for both above and below a device layer, within the footprint of the device.
  • the methods and structures herein may include any type of transistor/device, such as a planar, trigate, fin-fet, omega gate, gate all around device structures, and may comprise silicon or any other type of materials, such as III-V materials, for example.
  • FIG. 1 is a perspective view of a non-planar transistor 100, including at least one gate formed on at least one transistor fin, which are formed on a microelectronic substrate 102.
  • the microelectronic substrate 102 may be a monocrystalline silicon substrate.
  • the microelectronic substrate 102 may also be other types of substrates, such as silicon-on- insulator ("SOI"), germanium, gallium arsenide, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, gallium antimonide, and the like, any of which may be combined with silicon.
  • SOI silicon-on- insulator
  • the non-planar transistor shown as a tri-gate transistor, may include at least one non- planar transistor fin 112.
  • the non-planar transistor fin 112 may have a top surface 114 and a pair of laterally opposite sidewalls, sidewall 116 and opposing sidewall 118, respectively.
  • At least one non-planar transistor gate 122 may be formed over the non-planar transistor fin 112.
  • the non-planar transistor gate 122 may be fabricated by forming a gate dielectric layer 124 on or adjacent to the non-planar transistor fin top surface 114 and on or adjacent to the non-planar transistor fin sidewall 116 and the opposing non-planar transistor fin sidewall 118.
  • a gate electrode 126 may be formed on or adjacent the gate dielectric layer 124.
  • the non-planar transistor fin 112 may run in a direction substantially perpendicular to the non-planar transistor gate 122.
  • the gate dielectric layer 124 may be formed from any well-known gate dielectric material, including but not limited to silicon dioxide (Si0 2 ), silicon oxynitride (SiO x N y ), silicon nitride (Si 3 N 4 ), and high-k dielectric materials such as hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.
  • the gate dielectric layer 124 can be formed by well-known techniques, such as by conformally depositing a gate dielectric material and then patterning the gate dielectric material with well-known photolithography and etching techniques, as will be understood to those skilled in the art.
  • the gate electrode 126 may be formed by various methods, according to the particular application.
  • a source region and a drain region (not shown in FIG. 1) may be formed in the non- planar transistor fin 112 on opposite sides of the gate electrode 126.
  • the source and drain regions may be formed by doping the non-planar transistor fins 112, as will be understood to those skilled in the art.
  • the source and drain regions may be formed by removing potions of the non-planar transistor fins 112 and replacing these portions with appropriate material(s) to form the source and drain regions, as will be understood to those skilled in the art.
  • the source and drain regions may be formed by exitaxially growing doped or undoped strain layers on the fins 112. Other methods or
  • FIGS. 2a-2p side cross sectional views of structures and methods of forming self- aligned vias are depicted.
  • FIGS. 2a- 2p depict cross sectional views along arrows A-A and B-B of a non-planar device, such as the non-planar device of FIG. 1.
  • a portion of a device 200 such as a transistor device, is depicted.
  • the device 200 may comprise a substrate 201, in an embodiment, which may further comprise a portion of a silicon fin 203.
  • a layer 202 may be disposed on the substrate 200, wherein the layer 202 may comprise a dielectric layer/material, but in other embodiments it may comprise a silicon material.
  • a gate electrode 226 may be disposed on the layer 202, and may comprise a gate electrode material.
  • the gate electrode 226 may further comprise a gate dielectric material (not shown), disposed between the gate electrode 226 and the layer 202, as well as between a silicon fin 212 and the gate electrode 226.
  • a pair of gate spacers 206 may be disposed on either side of the gate electrode 226.
  • the view through B depicts the fin 212 portion of the substrate 200, wherein the gate 226 is disposed on the silicon fin 212 portion of the substrate 200.
  • Source/drain regions 208 are adjacent the gate spacers 206 in an embodiment, but in other embodiments, there may be no gate spacers 206 adjacent the gate 226, so that the source/drain regions may be adjacent the gate electrode 226, without the intervening gate spacers 206.
  • a mask material 210 may be formed on the gate electrode 226 and on the fin 201 of the device 200, to define an opening 211 in the source drain regions 208. Any type of process, such as an etching process, may be utilized to form a deep trench opening 211 in the source/drain regions 208.
  • the mask material 210 may be removed, and the trench opening 211, which may comprise a source/drain contact opening 211, may comprise a depth 203 of between about 20 nanometers and about 500 nanometers, in an embodiment (FIG. 2d).
  • the trench 211 may be lined with a liner material 217, along a sidewall of the trench 211, in an embodiment (FIG. 2e).
  • the liner 217 (it may comprise an insulating material, such as an alumina, silicon nitride, silicon carbide, material, for example.
  • the trench 211 may not be lined with the liner material 217.
  • a fill material 214 may be formed within and/or may fill the trench 211 (FIG. 2f). In an embodiment, the fill material 214 may be formed within the trench 211 by using a multi-step process, wherein the high aspect trench opening may be filled uniformly. In an embodiment, the fill material 214 may comprise a temporary material, such as a titianium containing material, such as titanium nitride, titanium oxide. In another embodiment, the fill material 214 may comprise a conductive material such as titanium, cobalt, tungsten, copper, or combinations thereof, and the like. In an embodiment, the fill material 214 may be a permanent portion of the device, and may be non-sacrificial.
  • the fill material 214 may be located below a typical source/drain trench depth, for example, the fill material 214 may completely or substantially extend through the layer 202. In an embodiment, the fill material 214 may be recessed with an etch process so that the fill material 214 may extend through the layer 202. In an embodiment, the fin 212 may be recessed and undercut/removed from the substrate 201(FIG. 2g).
  • source/drain material 218 may be formed on and/or in the source/drain regions (FIG. 2h).
  • the source drain material 218 may comprise an epitaxial material, such as a silicon germanium material, for example.
  • the source drain material 218 adjacent the gate electrode 226 may be on the material 214.
  • at least a portion of the source/drain material 218 may be directly on the material 214.
  • a first source/drain contact 220 may be coupled with and/or formed on the source/drain material 218 (FIG. 2i).
  • the first source/drain contact 220 may comprise a lower source/drain contact 220.
  • a carrier wafer may be attached to the device 200 (not shown), and the substrate 201 may be reduced in depth and or removed, from the layer 202 (FIG. 2j).
  • a portion of the substrate 201 may be removed by utilizing a grinding, wet etch or CMP process for example.
  • the mechanical base of the silicon fin 212 may be revealed/exposed, the fill material 214 may be exposed, and the back surface of the substrate 202 may be exposed.
  • the base of the silicon fin(s) 212 may be recessed, wherein an opening 215 is formed (FIG. 2k). The recess of the silicon fin 212 may reduce subfin leakage, in an
  • the recessed silicon fin regions may then be filled with a dielectric material 227, such as a silicon dioxide material for example, (FIG. 21), and may be polished to smooth out the surface.
  • a dielectric material 227 such as a silicon dioxide material for example, (FIG. 21)
  • the dielectric 227 may be patterned and etched to form source drain contact openings 229 (FIGS. 2m-2n).
  • the source/drain contact openings 229 may comprise deep openings, and may comprise a depth of about 20nm to about 300nm, in an embodiment.
  • the fill material 214 may be removed. However, in some embodiments, the fill material 214 may remain.
  • the source/drain openings 229 may be filled with a conductive material to form a second source/drain contact 230 (FIG. 2o).
  • the second source/drain contacts 230 may comprise self-aligned backside vias, and may comprise a height of about 40nm to about 500nm, in an embodiment.
  • the second source/drain contacts 230 may comprise conductive materials such as copper, tungsten, cobalt, and titanium, and may comprise an upper contact 230.
  • a first side 219 of the source/drain material 218 may be in direct contact with the first source/drain contact 220, and a second side 221 of the source/drain material 218 may be in direct contact with the second source/drain contact 230.
  • the second side 221 of the source/drain material 218 may be in direct contact with a non- sacrificial fill material 214, and the non- sacrificial fill material 214 may be in direct contact with the second contact 230 (FIG. 2p).
  • the first side 219 of the source/drain material 218 may be in direct contact with the first source/drain contact 220.
  • the gate electrode 226 may be adjacent to the first and second source/drain contacts 220, 230, and may be directly adjacent in some embodiments.
  • the first source/drain contact and the second source/drain contact may comprise substantially different heights, and in another embodiment, the height of one of the first source/drain contacts is about twice the height of the other of the source/drain contacts.
  • Embodiments herein enable the ability to make electrical connections between interconnect layers above and below transistor layers without increasing the transistor footprint.
  • the additional depth of the trench opening provides margin needed to connect to the other side of the device layer without electrically connecting the transistor channel region, in an embodiment.
  • self-aligned source drain contacts go through the source drain material and connect to an upper interconnect layer. The connection is within the footprint of the device.
  • a device structure 300 may comprise a plurality of upper interconnect structures 335 and a plurality of lower interconnect structures 325.
  • a device layer 310 may comprise a plurality of devices 322 that may be coupled to both the upper interconnect structures 335 and the lower interconnect structures 325, wherein the upper interconnect structures 335 are located above the device layer 310 and the lower interconnect structures 325 are located below the device layer 310.
  • devices 322 may comprise low power range, typically fast devices including logic devices such as FinFETs or other reduced form factor devices that can generally be arranged on a device layer at a higher pitch than higher voltage range devices.
  • a first source/drain contact 320 may be coupled with a first side 319 of a source/drain region 318 of one of the devices 322, and a second source/drain contact 330 may be coupled with a second side 321 of the source/drain region 318.
  • the first and second source/drain contacts 320, 330 may be directly coupled to the source/drain region 318 of the device 322, similar to the structure of FIG. 2o.
  • the devices 332 may comprise devices which do not comprise fin structures, such as planar transistor devices, or other types of device structures without a silicon fin.
  • the first and second source/drain contacts 320, 330 may comprise a via structure (not shown) between them.
  • the second source/drain contact 330 may be directly coupled with a fill material (not shown), similar to the structure of FIG. 2p.
  • the upper and lower source/drain contacts 330, 320 are coupled with the upper and lower plurality of interconnects 325, 335, respectively.
  • the device 300 may comprise multi-layers of interconnects, such as a first layer of lower interconnects 327, and a first layer of upper interconnects 337, and so on.
  • a source drain region 318 may be disposed between the first source/drain contact 320 and the second source/drain contact 320, and may be directly in contact with both first and second source/drain contacts, however in other embodiments there may be intervening layers between the first and second source/drain contacts and the source/drain region 318.
  • the upper and lower plurality of interconnects 325, 335 comprise a copper material and may be patterned as is known in the art.
  • Source/drain contacts 320, 330 disposed between circuit devices may comprise such materials as tungsten or copper material.
  • the plurality of upper and lower interconnects, as well as the source/drain contacts may be insulated from one another and from the devices by dielectric materials 303, such as with an oxide 303, for example.
  • FIG. 4 depicts a method according to embodiments herein.
  • a deep source/drain trench opening may be formed through a source/drain region of a substrate adjacent a gate electrode.
  • a fill material may be formed in the deep trench opening.
  • a source/drain material may be formed on the fill material, and then a first source/drain contact material may be formed on a first side of the source/drain material.
  • a second source/drain contact material may be formed on a second side of the source/drain material.
  • the structures of the embodiments herein may be coupled with any suitable type of structures capable of providing electrical communications between a
  • microelectronic device such as a die, disposed in package structures, and a next-level component to which the package structures may be coupled (e.g., a circuit board).
  • the device structures, and the components thereof, of the embodiments herein may comprise circuitry elements such as logic circuitry for use in a processor die, for example.
  • Metallization layers and insulating material may be included in the structures herein, as well as conductive contacts/bumps that may couple metal layers/interconnects to external devices/layers.
  • the structures/devices described in the various figures herein may comprise portions of a silicon logic die or a memory die, for example, or any type of suitable microelectronic device/die.
  • the devices may further comprise a plurality of dies, which may be stacked upon one another, depending upon the particular embodiment.
  • the die(s) may be partially or fully embedded in a package structure.
  • the various embodiments of the device structures included herein may be used for system on a chip (SOC) products, and may find application in such devices as smart phones, notebooks, tablets, wearable devices and other electronic mobile devices.
  • SOC system on a chip
  • the package structures may be included in a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobilePC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an
  • the package devices herein may be included in any other electronic devices that process data.
  • FIG. 5 illustrates a device 500 that includes one or more embodiments of the invention.
  • the device 500 may include interposer 501, which may comprise an intervening substrate used to bridge a first substrate 502 to a second substrate 504.
  • the first substrate 402 may be, for instance, an integrated circuit die, and may or may not include embodiments of the self-aligned via described structures herein.
  • the second substrate 504 may be, for instance, a memory module, a computer motherboard, or another integrated circuit die, and may or may not include embodiments of the self-aligned via described structures herein.
  • the purpose of an interposer 501 is to spread a connection to a wider pitch or to reroute a connection to a different connection.
  • an interposer 501 may couple an integrated circuit die to a ball grid array (BGA) 506 that can subsequently be coupled to the second substrate 504.
  • BGA ball grid array
  • the first and second substrates 502/504 are attached to opposing sides of the interposer 501.
  • the first and second substrates 502/504 are attached to the same side of the interposer 501.
  • three or more substrates are interconnected by way of the interposer 501.
  • the interposer 501 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In further implementations, the interposer may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials.
  • the interposer may include metal interconnects 508 and vias 510, including but not limited to through-silicon vias (TSVs) 512.
  • TSVs through-silicon vias
  • the interposer 501 may further include embedded devices 514, including both passive and active devices.
  • Such devices include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, and electrostatic discharge (ESD) devices. More complex devices such as radio-frequency (RF) devices, power amplifiers, power management devices, antennas, arrays, sensors, and MEMS devices may also be formed on the interposer 501.
  • RF radio-frequency
  • apparatuses or processes disclosed herein may be used in the fabrication of interposer 501.
  • FIG. 6 is a schematic of a computing device 600 according to an embodiment.
  • the computing device 600 houses a board 602, such as a motherboard 602 for example.
  • the board 602 may include a number of components, including but not limited to a processor 604, and an on-die memory 606, that may be communicatively coupled with an integrated circuit die 603, and at least one communication chip 608.
  • the processor 604 may be physically and electrically coupled to the board 602.
  • the at least one communication chip 608 may be physically and electrically coupled to the board 602.
  • the communication chip 606 is part of the processor 604.
  • computing device 600 may include other components that may or may not be physically and electrically coupled to the board 602, and may or may not be communicatively coupled to each other.
  • these other components include, but are not limited to, volatile memory (e.g., DRAM) 610, non-volatile memory (e.g., ROM) 612, flash memory (not shown), a graphics processor unit (GPU) 614, a digital signal processor (DSP) 616, a crypto processor 642, a chipset 620, an antenna 622, a display 624 such as a touchscreen display, a touchscreen controller 626, a battery 628, an audio codec (not shown), a video codec (not shown), a global positioning system (GPS) device 629, a compass 630, accelerometer, a gyroscope and other inertial sensors 632, a speaker 634, a camera 636, and a mass storage device (such as hard disk drive, or solid state drive) 640, compact disk (such as hard
  • the communication chip 608 enables wireless and/or wired communications for the transfer of data to and from the computing device 600.
  • wireless and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not.
  • the communication chip 608 may implement any of a number of wireless or wired standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA,
  • the computing device 600 may include a plurality of communication chips 608.
  • a first communication chip 608 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 1006 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.
  • the term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
  • the computing device 600 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a wearable device, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder.
  • the computing device 600 may be any other electronic device that processes data.
  • Embodiments may be implemented as a part of one or more memory chips, controllers, CPUs (Central Processing Unit), microchips or integrated circuits interconnected using a motherboard, an application specific integrated circuit (ASIC), and/or a field programmable gate array (FPGA).
  • CPUs Central Processing Unit
  • ASIC application specific integrated circuit
  • FPGA field programmable gate array

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Abstract

Methods and structures formed thereby are described, of forming self-aligned contact structures for microelectronic devices. An embodiment includes forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material.

Description

METHODS OF FORMING BACKSIDE SELF-ALIGNED VIAS AND STRUCTURES
FORMED THEREBY
BACKGROUND OF THE INVENTION
Microelectronic devices, such as monolithic integrated circuits (ICs), for example, may include a number of transistors, such as metal oxide semiconductor field effect transistors (MOSFETs) fabricated over a substrate, such as a silicon wafer. As device sizes continue to decrease, stacking of devices in a third dimension, typically referred to as vertical scaling, or three-dimensional (3D) integration, becomes a promising path toward greater device density.
BRIEF DESCRIPTION OF THE DRAWINGS While the specification concludes with claims particularly pointing out and distinctly claiming certain embodiments, the advantages of these embodiments can be more readily ascertained from the following description of the invention when read in conjunction with the accompanying drawings in which:
FIG. 1 represents a perspective view of a structure according to embodiments.
FIGS. 2a-2p represent side cross sectional views of structures according to
embodiments
FIG. 3 represents a cross sectional view of a structure according to embodiments.
FIG. 4 represents a flow chart of a method according to embodiments.
FIG. 5 represents an interposer implementing one or more embodiments.
FIG. 6 represents a schematic of a system according to embodiments.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the methods and structures may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the embodiments. It is to be understood that the various embodiments, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein, in connection with one embodiment, may be implemented within other embodiments without departing from the spirit and scope of the embodiments. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the embodiments. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the embodiments is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the claims are entitled. In the drawings, like numerals may refer to the same or similar functionality throughout the several views.
Implementations of the embodiments herein may be formed or carried out on a substrate, such as a semiconductor substrate. In one implementation, the semiconductor substrate may be a crystalline substrate formed using a bulk silicon or a silicon-on-insulator substructure. In other implementations, the semiconductor substrate may be formed using alternate materials, which may or may not be combined with silicon, that include but are not limited to germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, indium gallium arsenide, gallium antimonide, or other combinations of group III-V or group IV materials.
Although a few examples of materials from which the substrate may be formed are described here, any material that may serve as a foundation upon which a semiconductor device may be built falls within the spirit and scope.
A plurality of transistors, such as metal-oxide-semiconductor field-effect transistors (MOSFET or simply MOS transistors), may be fabricated on the substrate such as in device layers as will be noted herein. In various implementations, the MOS transistors may be planar transistors, nonplanar transistors, or a combination of both. Nonplanar transistors include FinFET transistors such as double-gate transistors and tri-gate transistors, and wrap-around or all-around gate transistors such as nanoribbon and nanowire transistors. Although the implementations described herein may illustrate non-planar transistors, it should be noted that embodiments may also be carried out using any other suitable type of transistor architecture.
Each transistor may include a gate stack formed of at least two layers, for example, a gate dielectric layer and a gate electrode layer. The gate dielectric layer may include one layer or a stack of layers. The one or more layers may include silicon oxide, silicon dioxide (Si02) and/or a high-k dielectric material. The high-k dielectric material may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used in the gate dielectric layer include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, an annealing process may be carried out on the gate dielectric layer to improve its quality when a high-k material is used.
The gate electrode layer may be formed on the gate dielectric layer and may consist of at least one P-type workfunction metal or N-type workfunction metal, depending on whether the transistor is to be a PMOS or an NMOS transistor. In some implementations, the gate electrode layer may consist of a stack of two or more metal layers, where one or more metal layers are workfunction metal layers and at least one metal layer is a fill metal layer.
For a PMOS transistor, metals that may be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide. A P-type metal layer will enable the formation of a PMOS gate electrode with a workfunction that is between about 4.9 eV and about 5.2 eV. For an NMOS transistor, metals that may be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, and carbides of these metals such as hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide. An N-type metal layer will enable the formation of an NMOS gate electrode with a workfunction that is between about 3.9 eV and about 4.2 eV.
In some implementations, the gate electrode may consist of a "U"-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate. In another implementation, at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In further implementations, the gate electrode may consist of a combination of U-shaped structures and planar, non-U-shaped structures. For example, the gate electrode may consist of one or more U- shaped metal layers formed atop one or more planar, non-U-shaped layers.
In some implementations, a pair of sidewall spacers may be formed on opposing sides of the gate stack that bracket the gate stack. The sidewall spacers may be formed from a material such as silicon nitride, silicon oxide, silicon carbide, silicon nitride doped with carbon, and silicon oxynitride. Processes for forming sidewall spacers may include deposition and etching process steps. In an alternate implementation, a plurality of spacer pairs may be used, for instance, two pairs, three pairs, or four pairs of sidewall spacers may be formed on opposing sides of the gate stack.
Source and drain regions may be formed within the substrate adjacent to the gate stack of each MOS transistor. The source and drain regions are generally formed using either an implantation/diffusion process or an etching/deposition process. In the former process, dopants such as boron, aluminum, antimony, phosphorous, or arsenic may be ion-implanted into the substrate to form the source and drain regions. An annealing process that activates the dopants and causes them to diffuse further into the substrate typically follows the ion implantation process. In an embodiment, the substrate may first be etched to form recesses at the locations of the source and drain regions. An epitaxial deposition process may then be carried out to fill the recesses with material that is used to fabricate the source and drain regions. In some
implementations, the source and drain regions may be fabricated using a silicon alloy such as silicon germanium or silicon carbide. In some implementations the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorous. In further embodiments, the source and drain regions may be formed using one or more alternate semiconductor materials such as germanium or a group III-V material or alloy. And in further embodiments, one or more layers of metal and/or metal alloys may be used to form the source and drain regions.
One or more interlayer dielectrics (ILD) are deposited over the MOS transistors. The ILD layers may be formed using dielectric materials known for their applicability in integrated circuit structures, such as low-k dielectric materials. Examples of dielectric materials that may be used include, but are not limited to, silicon dioxide (Si02), carbon doped oxide (CDO), silicon nitride, organic polymers such as perfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass (FSG), and organosilicates such as silsesquioxane, siloxane, or organo silicate glass. The ILD layers may include pores or air gaps to further reduce their dielectric constant.
Methods and associated structures of forming microelectronic device structures, such as self-aligned via structures, are presented. Those methods/structures may include forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material. The self- aligned vias/contacts of the embodiments herein provide interconnect structures for both above and below a device layer, within the footprint of the device. Although embodiments herein depict examples of a non-planar device, the methods and structures herein may include any type of transistor/device, such as a planar, trigate, fin-fet, omega gate, gate all around device structures, and may comprise silicon or any other type of materials, such as III-V materials, for example.
FIG. 1 is a perspective view of a non-planar transistor 100, including at least one gate formed on at least one transistor fin, which are formed on a microelectronic substrate 102. In an embodiment, the microelectronic substrate 102 may be a monocrystalline silicon substrate. The microelectronic substrate 102 may also be other types of substrates, such as silicon-on- insulator ("SOI"), germanium, gallium arsenide, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, gallium antimonide, and the like, any of which may be combined with silicon.
The non-planar transistor, shown as a tri-gate transistor, may include at least one non- planar transistor fin 112. The non-planar transistor fin 112 may have a top surface 114 and a pair of laterally opposite sidewalls, sidewall 116 and opposing sidewall 118, respectively.
As further shown in FIG. 1, at least one non-planar transistor gate 122 may be formed over the non-planar transistor fin 112. The non-planar transistor gate 122 may be fabricated by forming a gate dielectric layer 124 on or adjacent to the non-planar transistor fin top surface 114 and on or adjacent to the non-planar transistor fin sidewall 116 and the opposing non-planar transistor fin sidewall 118. A gate electrode 126 may be formed on or adjacent the gate dielectric layer 124. In one embodiment of the present disclosure, the non-planar transistor fin 112 may run in a direction substantially perpendicular to the non-planar transistor gate 122.
The gate dielectric layer 124 may be formed from any well-known gate dielectric material, including but not limited to silicon dioxide (Si02), silicon oxynitride (SiOxNy), silicon nitride (Si3N4), and high-k dielectric materials such as hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. The gate dielectric layer 124 can be formed by well-known techniques, such as by conformally depositing a gate dielectric material and then patterning the gate dielectric material with well-known photolithography and etching techniques, as will be understood to those skilled in the art.
The gate electrode 126 may be formed by various methods, according to the particular application. A source region and a drain region (not shown in FIG. 1) may be formed in the non- planar transistor fin 112 on opposite sides of the gate electrode 126. In one embodiment, the source and drain regions may be formed by doping the non-planar transistor fins 112, as will be understood to those skilled in the art. In another embodiment, the source and drain regions may be formed by removing potions of the non-planar transistor fins 112 and replacing these portions with appropriate material(s) to form the source and drain regions, as will be understood to those skilled in the art. In still another embodiment, the source and drain regions may be formed by exitaxially growing doped or undoped strain layers on the fins 112. Other methods or
combination of methods, may be utilized to form the source/drain regions, according to the particular application. In FIGS. 2a-2p, side cross sectional views of structures and methods of forming self- aligned vias are depicted. FIGS. 2a- 2p depict cross sectional views along arrows A-A and B-B of a non-planar device, such as the non-planar device of FIG. 1. In FIG. 2a, a portion of a device 200, such as a transistor device, is depicted. The device 200 may comprise a substrate 201, in an embodiment, which may further comprise a portion of a silicon fin 203. A layer 202 may be disposed on the substrate 200, wherein the layer 202 may comprise a dielectric layer/material, but in other embodiments it may comprise a silicon material. A gate electrode 226 may be disposed on the layer 202, and may comprise a gate electrode material. The gate electrode 226 may further comprise a gate dielectric material (not shown), disposed between the gate electrode 226 and the layer 202, as well as between a silicon fin 212 and the gate electrode 226. In an embodiment, a pair of gate spacers 206 may be disposed on either side of the gate electrode 226. The view through B depicts the fin 212 portion of the substrate 200, wherein the gate 226 is disposed on the silicon fin 212 portion of the substrate 200. Source/drain regions 208 are adjacent the gate spacers 206 in an embodiment, but in other embodiments, there may be no gate spacers 206 adjacent the gate 226, so that the source/drain regions may be adjacent the gate electrode 226, without the intervening gate spacers 206.
In FIGS. 2b-2c, a mask material 210 may be formed on the gate electrode 226 and on the fin 201 of the device 200, to define an opening 211 in the source drain regions 208. Any type of process, such as an etching process, may be utilized to form a deep trench opening 211 in the source/drain regions 208. The mask material 210 may be removed, and the trench opening 211, which may comprise a source/drain contact opening 211, may comprise a depth 203 of between about 20 nanometers and about 500 nanometers, in an embodiment (FIG. 2d). In an optional embodiment, the trench 211 may be lined with a liner material 217, along a sidewall of the trench 211, in an embodiment (FIG. 2e). In an embodiment, the liner 217 (it may comprise an insulating material, such as an alumina, silicon nitride, silicon carbide, material, for example. In an embodiment, the trench 211 may not be lined with the liner material 217.
In an embodiment, a fill material 214 may be formed within and/or may fill the trench 211 (FIG. 2f). In an embodiment, the fill material 214 may be formed within the trench 211 by using a multi-step process, wherein the high aspect trench opening may be filled uniformly. In an embodiment, the fill material 214 may comprise a temporary material, such as a titianium containing material, such as titanium nitride, titanium oxide. In another embodiment, the fill material 214 may comprise a conductive material such as titanium, cobalt, tungsten, copper, or combinations thereof, and the like. In an embodiment, the fill material 214 may be a permanent portion of the device, and may be non-sacrificial. In an embodiment, the fill material 214 may be located below a typical source/drain trench depth, for example, the fill material 214 may completely or substantially extend through the layer 202. In an embodiment, the fill material 214 may be recessed with an etch process so that the fill material 214 may extend through the layer 202. In an embodiment, the fin 212 may be recessed and undercut/removed from the substrate 201(FIG. 2g).
In an embodiment, source/drain material 218 may be formed on and/or in the source/drain regions (FIG. 2h). In an embodiment, the source drain material 218 may comprise an epitaxial material, such as a silicon germanium material, for example. In an embodiment, the source drain material 218 adjacent the gate electrode 226 may be on the material 214. In an embodiment, at least a portion of the source/drain material 218 may be directly on the material 214. In an embodiment, a first source/drain contact 220 may be coupled with and/or formed on the source/drain material 218 (FIG. 2i). In an embodiment, the first source/drain contact 220 may comprise a lower source/drain contact 220.
In an embodiment, a carrier wafer may be attached to the device 200 (not shown), and the substrate 201 may be reduced in depth and or removed, from the layer 202 (FIG. 2j). In an embodiment, a portion of the substrate 201 may be removed by utilizing a grinding, wet etch or CMP process for example. The mechanical base of the silicon fin 212 may be revealed/exposed, the fill material 214 may be exposed, and the back surface of the substrate 202 may be exposed. In an embodiment, the base of the silicon fin(s) 212 may be recessed, wherein an opening 215 is formed (FIG. 2k). The recess of the silicon fin 212 may reduce subfin leakage, in an
embodiment. The recessed silicon fin regions may then be filled with a dielectric material 227, such as a silicon dioxide material for example, (FIG. 21), and may be polished to smooth out the surface.
In an embodiment, the dielectric 227 may be patterned and etched to form source drain contact openings 229 (FIGS. 2m-2n). In an embodiment, the source/drain contact openings 229 may comprise deep openings, and may comprise a depth of about 20nm to about 300nm, in an embodiment. In an embodiment, the fill material 214 may be removed. However, in some embodiments, the fill material 214 may remain. In an embodiment, the source/drain openings 229 may be filled with a conductive material to form a second source/drain contact 230 (FIG. 2o). In an embodiment, the second source/drain contacts 230 may comprise self-aligned backside vias, and may comprise a height of about 40nm to about 500nm, in an embodiment. The second source/drain contacts 230 (as well as the first source/drain contacts) may comprise conductive materials such as copper, tungsten, cobalt, and titanium, and may comprise an upper contact 230. In an embodiment, a first side 219 of the source/drain material 218 may be in direct contact with the first source/drain contact 220, and a second side 221 of the source/drain material 218 may be in direct contact with the second source/drain contact 230. In another embodiment, the second side 221 of the source/drain material 218 may be in direct contact with a non- sacrificial fill material 214, and the non- sacrificial fill material 214 may be in direct contact with the second contact 230 (FIG. 2p). The first side 219 of the source/drain material 218 may be in direct contact with the first source/drain contact 220. In an embodiment, the gate electrode 226 may be adjacent to the first and second source/drain contacts 220, 230, and may be directly adjacent in some embodiments. In an embodiment, the first source/drain contact and the second source/drain contact may comprise substantially different heights, and in another embodiment, the height of one of the first source/drain contacts is about twice the height of the other of the source/drain contacts.
The ability to route the electrical interconnects above and below a transistor layer provides novel routing and scaling options. Embodiments herein enable the ability to make electrical connections between interconnect layers above and below transistor layers without increasing the transistor footprint. The additional depth of the trench opening provides margin needed to connect to the other side of the device layer without electrically connecting the transistor channel region, in an embodiment. In an embodiment, self-aligned source drain contacts go through the source drain material and connect to an upper interconnect layer. The connection is within the footprint of the device.
Referring to FIG. 3, in an embodiment, a device structure 300 may comprise a plurality of upper interconnect structures 335 and a plurality of lower interconnect structures 325. A device layer 310 may comprise a plurality of devices 322 that may be coupled to both the upper interconnect structures 335 and the lower interconnect structures 325, wherein the upper interconnect structures 335 are located above the device layer 310 and the lower interconnect structures 325 are located below the device layer 310. In one embodiment, devices 322 may comprise low power range, typically fast devices including logic devices such as FinFETs or other reduced form factor devices that can generally be arranged on a device layer at a higher pitch than higher voltage range devices. In an embodiment, a first source/drain contact 320 may be coupled with a first side 319 of a source/drain region 318 of one of the devices 322, and a second source/drain contact 330 may be coupled with a second side 321 of the source/drain region 318. In an embodiment, the first and second source/drain contacts 320, 330 may be directly coupled to the source/drain region 318 of the device 322, similar to the structure of FIG. 2o. In an embodiment, the devices 332 may comprise devices which do not comprise fin structures, such as planar transistor devices, or other types of device structures without a silicon fin. In an embodiment, the first and second source/drain contacts 320, 330 may comprise a via structure (not shown) between them. In another embodiment, the second source/drain contact 330 may be directly coupled with a fill material (not shown), similar to the structure of FIG. 2p.
The upper and lower source/drain contacts 330, 320 are coupled with the upper and lower plurality of interconnects 325, 335, respectively. In an embodiment, the device 300 may comprise multi-layers of interconnects, such as a first layer of lower interconnects 327, and a first layer of upper interconnects 337, and so on. In an embodiment, a source drain region 318, may be disposed between the first source/drain contact 320 and the second source/drain contact 320, and may be directly in contact with both first and second source/drain contacts, however in other embodiments there may be intervening layers between the first and second source/drain contacts and the source/drain region 318.
In one embodiment, the upper and lower plurality of interconnects 325, 335 comprise a copper material and may be patterned as is known in the art. Source/drain contacts 320, 330 disposed between circuit devices may comprise such materials as tungsten or copper material. The plurality of upper and lower interconnects, as well as the source/drain contacts may be insulated from one another and from the devices by dielectric materials 303, such as with an oxide 303, for example.
FIG. 4 depicts a method according to embodiments herein. At step 402, a deep source/drain trench opening may be formed through a source/drain region of a substrate adjacent a gate electrode. At step 404, a fill material may be formed in the deep trench opening. At step 406, a source/drain material may be formed on the fill material, and then a first source/drain contact material may be formed on a first side of the source/drain material. At step 408, a second source/drain contact material may be formed on a second side of the source/drain material.
In an embodiment, the structures of the embodiments herein may be coupled with any suitable type of structures capable of providing electrical communications between a
microelectronic device, such as a die, disposed in package structures, and a next-level component to which the package structures may be coupled (e.g., a circuit board).
The device structures, and the components thereof, of the embodiments herein may comprise circuitry elements such as logic circuitry for use in a processor die, for example.
Metallization layers and insulating material may be included in the structures herein, as well as conductive contacts/bumps that may couple metal layers/interconnects to external devices/layers. The structures/devices described in the various figures herein may comprise portions of a silicon logic die or a memory die, for example, or any type of suitable microelectronic device/die. In some embodiments the devices may further comprise a plurality of dies, which may be stacked upon one another, depending upon the particular embodiment. In an embodiment, the die(s) may be partially or fully embedded in a package structure.
The various embodiments of the device structures included herein may be used for system on a chip (SOC) products, and may find application in such devices as smart phones, notebooks, tablets, wearable devices and other electronic mobile devices. In various
implementations, the package structures may be included in a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobilePC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an
entertainment control unit, a digital camera, a portable music player, or a digital video recorder, and wearable devices. In further implementations, the package devices herein may be included in any other electronic devices that process data.
FIG. 5 illustrates a device 500 that includes one or more embodiments of the invention.
The device 500 may include interposer 501, which may comprise an intervening substrate used to bridge a first substrate 502 to a second substrate 504. The first substrate 402 may be, for instance, an integrated circuit die, and may or may not include embodiments of the self-aligned via described structures herein. The second substrate 504 may be, for instance, a memory module, a computer motherboard, or another integrated circuit die, and may or may not include embodiments of the self-aligned via described structures herein. Generally, the purpose of an interposer 501 is to spread a connection to a wider pitch or to reroute a connection to a different connection.
For example, an interposer 501 may couple an integrated circuit die to a ball grid array (BGA) 506 that can subsequently be coupled to the second substrate 504. In some embodiments, the first and second substrates 502/504 are attached to opposing sides of the interposer 501. In other embodiments, the first and second substrates 502/504 are attached to the same side of the interposer 501. And in further embodiments, three or more substrates are interconnected by way of the interposer 501.
The interposer 501 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In further implementations, the interposer may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials. The interposer may include metal interconnects 508 and vias 510, including but not limited to through-silicon vias (TSVs) 512. The interposer 501 may further include embedded devices 514, including both passive and active devices. Such devices include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, and electrostatic discharge (ESD) devices. More complex devices such as radio-frequency (RF) devices, power amplifiers, power management devices, antennas, arrays, sensors, and MEMS devices may also be formed on the interposer 501.
In accordance with embodiments, apparatuses or processes disclosed herein may be used in the fabrication of interposer 501.
FIG. 6 is a schematic of a computing device 600 according to an embodiment. In an embodiment, the computing device 600 houses a board 602, such as a motherboard 602 for example. The board 602 may include a number of components, including but not limited to a processor 604, and an on-die memory 606, that may be communicatively coupled with an integrated circuit die 603, and at least one communication chip 608. The processor 604 may be physically and electrically coupled to the board 602. In some implementations the at least one communication chip 608 may be physically and electrically coupled to the board 602. In further implementations, the communication chip 606 is part of the processor 604.
Depending on its applications, computing device 600 may include other components that may or may not be physically and electrically coupled to the board 602, and may or may not be communicatively coupled to each other. These other components include, but are not limited to, volatile memory (e.g., DRAM) 610, non-volatile memory (e.g., ROM) 612, flash memory (not shown), a graphics processor unit (GPU) 614, a digital signal processor (DSP) 616, a crypto processor 642, a chipset 620, an antenna 622, a display 624 such as a touchscreen display, a touchscreen controller 626, a battery 628, an audio codec (not shown), a video codec (not shown), a global positioning system (GPS) device 629, a compass 630, accelerometer, a gyroscope and other inertial sensors 632, a speaker 634, a camera 636, and a mass storage device (such as hard disk drive, or solid state drive) 640, compact disk (CD) (not shown), digital versatile disk (DVD) (not shown), and so forth). These components may be connected to the system board 602, mounted to the system board, or combined with any of the other components.
The communication chip 608 enables wireless and/or wired communications for the transfer of data to and from the computing device 600. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 608 may implement any of a number of wireless or wired standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA,
TDMA, DECT, Bluetooth, Ethernet derivatives thereof, as well as any other wireless and wired protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 600 may include a plurality of communication chips 608. For instance, a first communication chip 608 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 1006 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others. The term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
In various implementations, the computing device 600 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a wearable device, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 600 may be any other electronic device that processes data.
Embodiments may be implemented as a part of one or more memory chips, controllers, CPUs (Central Processing Unit), microchips or integrated circuits interconnected using a motherboard, an application specific integrated circuit (ASIC), and/or a field programmable gate array (FPGA).
Although the foregoing description has specified certain steps and materials that may be used in the methods of the embodiments, those skilled in the art will appreciate that many modifications and substitutions may be made. Accordingly, it is intended that all such modifications, alterations, substitutions and additions be considered to fall within the spirit and scope of the embodiments as defined by the appended claims. In addition, the Figures provided herein illustrate only portions of exemplary microelectronic devices and associated package structures that pertain to the practice of the embodiments. Thus the embodiments are not limited to the structures described herein.

Claims

IN THE CLAIMS What is claimed is:
1. A microelectronic structure comprising:
a substrate;
a device layer on the substrate;
at least one device disposed within the device layer, wherein the at least one device comprises a gate electrode disposed between source/drain regions; a first source/drain contact coupled to a first side of one of the source/drain regions; and
a second source/drain contact coupled to a second side of the one of the source/drain regions.
2. The structure of claim 1 wherein the source/drain regions comprise an epitaxial material, and wherein the first source/drain contact is coupled with a plurality of first interconnects that are below the device layer.
3. The structure of claim 1 wherein the source/drain regions comprises an epitaxial material, and wherein the second source/drain contact is coupled with a plurality of second interconnects that are above the device layer.
4. The structure of claim 1 wherein a fill material is disposed between one of the first source/drain contact or the second source/drain contact, and the one of the source/drain regions.
5. The structure of claim 4 wherein the fill material is selected from the group consisting of titanium, cobalt, tungsten and copper.
6. The structure of claim 4 wherein the fill material further comprises a liner material.
7. The structure of claim 1 wherein the device comprises a non-planar device.
8. The structure of claim 1 further comprising wherein the first source/drain contact and the second source/drain contact are directly coupled to the one of the source/drain region.
9. A structure comprising:
a substrate;
a fin on the substrate, wherein the fin comprises a silicon fin;
a device layer disposed on the substrate, wherein at least one device is disposed within the device layer, and wherein the at least one device comprises a gate electrode disposed between source/drain regions;
a first source/drain contact coupled with a first side of one of the source/drain regions of one of the at least one devices, wherein the first source/drain contact is coupled with a plurality of lower interconnect structures below the device layer; and
a second source/drain contact coupled with a second side of the one of the source/drain regions, wherein the second source/drain contact is coupled with a plurality of upper interconnect structures below the device layer.
10. The structure of claim 9 further comprising wherein the silicon fin
comprises a recessed silicon fin.
11. The structure of claim 9 wherein the gate electrode is adjacent the first source/drain contact and the second source/drain contact.
12. The structure of claim 9 wherein the source/drain regions comprise an epitaxial material, wherein the epitaxial material comprises silicon and germanium.
13. The structure of claim 9 wherein the first source/drain contact and the second source/drain contact comprises substantially different heights.
14. The structure of claim 13 wherein the height of one of the first and second source/drain contacts is about twice the height of the other of the first and second source/drain contacts.
The structure of claim 9 further comprising a system comprising: a communication chip communicatively coupled to the structure; and a DRAM communicatively coupled to the communication chip.
16. The structure of claim 8 further comprising wherein the structure comprises a monolithic 3D device structure.
17. A method of forming a microelectronic structure, comprising:
forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate;
forming a fill material in the trench;
forming a source/drain material on the fill material;
forming a first source/drain contact on a first side of the source/drain material; and
forming a second source drain contact on a second side of the source/drain material.
18. The method of claim 17 further comprising wherein the first source/drain contact is further coupled to a first plurality of interconnects located below the device layer.
19. The method of claim 17 further comprising wherein the second source/drain contact is coupled to a second plurality of interconnects located above the device layer.
20. The method of claim 17 wherein the fill material comprises a conductive material.
21. The method of claim 17 further comprising wherein the fill material is removed prior to forming the second source/drain contact.
22. The method of claim 17, further comprising wherein the second source/drain contact is formed on the fill material.
23. The method of claim 17 further comprising wherein the device comprises a portion of one of a FINFET, a tri-gate, or a planar transistor structure.
24. The method of claim 17 further comprising wherein a silicon fin of the device comprises a recessed silicon fin.
25. The method of claim 17 further comprising wherein the source/drain material comprises an epitaxial material.
PCT/US2015/052033 2015-09-24 2015-09-24 Methods of forming backside self-aligned vias and structures formed thereby Ceased WO2017052562A1 (en)

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PCT/US2015/052033 WO2017052562A1 (en) 2015-09-24 2015-09-24 Methods of forming backside self-aligned vias and structures formed thereby
TW109134264A TWI757900B (en) 2015-09-24 2016-08-09 Methods of forming backside self-aligned vias and structures formed thereby
TW105125329A TWI706469B (en) 2015-09-24 2016-08-09 Methods of forming backside self-aligned vias and structures formed thereby
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3579274A1 (en) * 2018-06-07 2019-12-11 INTEL Corporation Deep trench via for three-dimensional integrated circuit
EP3504738A4 (en) * 2016-08-26 2020-09-02 INTEL Corporation INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE SIDED MANUFACTURING TECHNIQUES
US10797139B2 (en) 2015-09-24 2020-10-06 Intel Corporation Methods of forming backside self-aligned vias and structures formed thereby
US11270991B1 (en) 2020-09-02 2022-03-08 Qualcomm Incorporated Integrated circuits (ICs) employing front side (FS) back end-of-line (BEOL) (FS-BEOL) input/output (I/O) routing and back side (BS) BEOL (BS-BEOL) power routing for current flow organization, and related methods
US11328951B2 (en) 2016-04-01 2022-05-10 Intel Corporation Transistor cells including a deep via lined wit h a dielectric material
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US11688780B2 (en) 2019-03-22 2023-06-27 Intel Corporation Deep source and drain for transistor structures with back-side contact metallization
US11869890B2 (en) 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US12604481B2 (en) 2021-12-21 2026-04-14 Intel Corporation IC's with multple levels of embedded memory

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017052630A1 (en) 2015-09-25 2017-03-30 Intel Corporation Wrap-around source/drain method of making contacts for backside metals
US9972537B2 (en) * 2016-02-24 2018-05-15 Globalfoundries Inc. Methods of forming graphene contacts on source/drain regions of FinFET devices
US10079290B2 (en) * 2016-12-30 2018-09-18 United Microelectronics Corp. Semiconductor device having asymmetric spacer structures
US11776898B2 (en) * 2018-02-22 2023-10-03 Intel Corporation Sidewall interconnect metallization structures for integrated circuit devices
US10741451B2 (en) 2018-10-03 2020-08-11 Globalfoundries Inc. FinFET having insulating layers between gate and source/drain contacts
US11450665B2 (en) 2020-03-30 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with self-aligned backside power rail
US11362213B2 (en) * 2020-03-31 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trench
DE102020129842A1 (en) * 2020-03-31 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. FINFET DEVICES WITH REAR BUSBAR AND REAR SELF-ADJUSTING THROUGH CONTACT
US11342413B2 (en) 2020-04-24 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Selective liner on backside via and method thereof
DE102020121223A1 (en) 2020-04-24 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selective lining on back vias and their processes
US11349004B2 (en) * 2020-04-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Backside vias in semiconductor device
US11239325B2 (en) * 2020-04-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside via and method of fabricating thereof
DE102020127451B4 (en) 2020-05-08 2023-12-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for forming a long-channel rear busbar device and associated semiconductor device
US11637101B2 (en) 2020-05-26 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
TWI762196B (en) * 2020-05-26 2022-04-21 台灣積體電路製造股份有限公司 Semiconductor device and manufacturing method thereof
US11799002B2 (en) * 2020-05-29 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
US11233005B1 (en) * 2020-07-10 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing an anchor-shaped backside via
US11588050B2 (en) 2020-08-31 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Backside contact
US11784228B2 (en) 2021-04-09 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Process and structure for source/drain contacts
US11848372B2 (en) 2021-04-21 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing source/drain contact resistance at wafer backside
US12136655B2 (en) 2021-09-22 2024-11-05 International Business Machines Corporation Backside electrical contacts to buried power rails
US12243913B2 (en) 2022-02-23 2025-03-04 International Business Machines Corporation Self-aligned backside contact integration for transistors
US12593468B2 (en) 2022-05-24 2026-03-31 International Business Machines Corporation Self-aligned backside contact with increased contact area
US12581702B2 (en) 2022-06-24 2026-03-17 International Business Machines Corporation Common self aligned gate contact for stacked transistor structures
US12426327B2 (en) * 2022-08-17 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US12604674B2 (en) 2022-08-23 2026-04-14 International Business Machines Corporation Back side phase change memory (PCM) with PCM back side source/drain contact structure
US12341099B2 (en) 2022-09-23 2025-06-24 International Business Machines Corporation Semiconductor backside transistor integration with backside power delivery network
US12469785B2 (en) 2022-09-26 2025-11-11 International Business Machines Corporation Backside power rail with tight space
US12527032B2 (en) 2022-09-30 2026-01-13 International Business Machines Corporation Backside contact with shallow placeholder and easy backside semiconductor removal
US12557356B2 (en) 2022-10-17 2026-02-17 International Business Machines Corporation Semiconductor structure with fully wrapped-around backside contact
US12419080B2 (en) 2022-10-18 2025-09-16 International Business Machines Corporation Semiconductor structure with wrapped-around backside contact
US12557338B2 (en) 2022-11-08 2026-02-17 International Business Machines Corporation Semiconductor structure having a backside contact with backside sidewall spacers
EP4379784B1 (en) * 2022-11-30 2025-09-17 Imec VZW A method for forming a semiconductor device with a buried power rail
US12506049B2 (en) 2022-12-05 2025-12-23 International Business Machines Corporation Transistors with backside source/drain contact and spacer
US12451412B2 (en) 2023-03-02 2025-10-21 International Business Machines Corporation Backside gate via structure using self-aligned scheme
US12500144B2 (en) 2023-05-05 2025-12-16 International Business Machines Corporation Backside self aligned skip via
US12557359B2 (en) 2023-06-06 2026-02-17 International Business Machines Corporation Self-aligned backside contact with protruding source/drain
US12598789B2 (en) 2023-06-22 2026-04-07 International Business Machines Corporation Self-aligned backside contact
US12581723B2 (en) 2023-07-31 2026-03-17 International Business Machines Corporation Backside power via
US12588265B2 (en) 2023-08-10 2026-03-24 International Business Machines Corporation Semiconductor structure with enhanced placeholder position margin
US20250089336A1 (en) * 2023-09-11 2025-03-13 International Business Machines Corporation Dual sided circuit connections
US12588266B2 (en) 2023-09-19 2026-03-24 International Business Machines Corporation CMOS integration for doped placeholder as direct backside contact
US12615832B2 (en) 2023-11-21 2026-04-28 International Business Machines Corporation Self-aligned backside contact structure for semiconductor device power delivery

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869867A (en) * 1996-03-19 1999-02-09 Nec Corporation FET semiconductor integrated circuit device having a planar element structure
US20060115943A1 (en) * 2001-11-05 2006-06-01 Zycube Co., Ltd. Method of fabricating semiconductor device using low dielectric constant material film
US20070296002A1 (en) * 2006-06-27 2007-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contacts for MOS devices
US20140332749A1 (en) * 2013-05-08 2014-11-13 Sony Corporation Semiconductor device and method of manufacturing same
US20150069520A1 (en) * 2013-09-09 2015-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Backside Contacts for Integrated Circuit Devices

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006546A2 (en) 1999-07-16 2001-01-25 Massachusetts Institute Of Technology Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
TW593116B (en) 2000-02-16 2004-06-21 Toshiba Corp Elevator device
KR101057569B1 (en) 2009-03-24 2011-08-17 이상윤 Manufacturing method of three-dimensional semiconductor device
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7485508B2 (en) 2007-01-26 2009-02-03 International Business Machines Corporation Two-sided semiconductor-on-insulator structures and methods of manufacturing the same
JP2009164589A (en) 2007-12-12 2009-07-23 Elpida Memory Inc Semiconductor device and manufacturing method thereof
JP2009164158A (en) * 2007-12-28 2009-07-23 Panasonic Corp Semiconductor device and manufacturing method thereof
US9379059B2 (en) 2008-03-21 2016-06-28 Mediatek Inc. Power and ground routing of integrated circuit devices with improved IR drop and chip performance
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8084795B2 (en) 2009-05-22 2011-12-27 James Nan Hsi Pan Resonant cavity complementary optoelectronic transistors
US8232597B2 (en) 2009-07-15 2012-07-31 Io Semiconductor, Inc. Semiconductor-on-insulator with back side connection
US8716091B2 (en) 2010-03-30 2014-05-06 International Business Machines Corporation Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain
US8354675B2 (en) 2010-05-07 2013-01-15 International Business Machines Corporation Enhanced capacitance deep trench capacitor for EDRAM
US8426258B2 (en) 2010-10-12 2013-04-23 Io Semiconductor, Inc. Vertical semiconductor device with thinned substrate
JP5678866B2 (en) * 2011-10-31 2015-03-04 株式会社デンソー Semiconductor device and manufacturing method thereof
ITTO20120742A1 (en) 2012-08-24 2014-02-25 St Microelectronics Srl SEMICONDUCTOR DEVICE WITH IMPROVED LINEAR AND SWITCHING OPERATING MODES, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD OF POLARIZATION OF THE SEMICONDUCTOR DEVICE
US9735243B2 (en) 2013-11-18 2017-08-15 Infineon Technologies Ag Semiconductor device, integrated circuit and method of forming a semiconductor device
KR101968351B1 (en) 2013-01-28 2019-08-13 서울대학교산학협력단 Semiconductor device and method of fabricating the same
US9640531B1 (en) 2014-01-28 2017-05-02 Monolithic 3D Inc. Semiconductor device, structure and methods
US20140264632A1 (en) 2013-03-18 2014-09-18 Globalfoundries Inc. Semiconductor structure including a transistor having a layer of a stress-creating material and method for the formation thereof
US9059123B2 (en) 2013-07-24 2015-06-16 International Business Machines Corporation Active matrix using hybrid integrated circuit and bipolar transistor
US9929133B2 (en) * 2013-08-27 2018-03-27 Taiwan Semiconductor Manufacturing Company Limited Semiconductor logic circuits fabricated using multi-layer structures
JP2015050339A (en) 2013-09-02 2015-03-16 ソニー株式会社 Semiconductor device and manufacturing method of the same
CN105723501B (en) 2013-12-18 2020-02-21 英特尔公司 Heterogeneous layer device
CN104810396B (en) 2014-01-23 2018-02-06 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and its manufacture method
US9293437B2 (en) 2014-02-20 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Functional block stacked 3DIC and method of making same
US9385201B2 (en) 2014-06-06 2016-07-05 Stmicroelectronics, Inc. Buried source-drain contact for integrated circuit transistor devices and method of making same
US9431296B2 (en) 2014-06-26 2016-08-30 International Business Machines Corporation Structure and method to form liner silicide with improved contact resistance and reliablity
KR102230198B1 (en) * 2014-09-23 2021-03-19 삼성전자주식회사 Semiconductor device and method for manufacturing the same
US20160095221A1 (en) 2014-09-27 2016-03-31 Qualcomm Incorporated Integration of electronic elements on the backside of a semiconductor die
US9385195B1 (en) 2015-03-31 2016-07-05 Stmicroelectronics, Inc. Vertical gate-all-around TFET
US20190057959A1 (en) 2015-06-06 2019-02-21 Monolithic 3D Inc. Semiconductor device and structure with thermal isolation
DE112015006959T5 (en) 2015-09-24 2018-06-07 Intel Corporation METHOD FOR FORMING BACK-EITHER SELF-ALIGNED CONTACT AND STRUCTURES MADE THEREFROM
WO2017052626A1 (en) 2015-09-25 2017-03-30 Intel Corporation Power gate with metal on both sides
US10790281B2 (en) 2015-12-03 2020-09-29 Intel Corporation Stacked channel structures for MOSFETs
US9780210B1 (en) 2016-08-11 2017-10-03 Qualcomm Incorporated Backside semiconductor growth
US10420171B2 (en) 2016-08-26 2019-09-17 Qualcomm Incorporated Semiconductor devices on two sides of an isolation layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869867A (en) * 1996-03-19 1999-02-09 Nec Corporation FET semiconductor integrated circuit device having a planar element structure
US20060115943A1 (en) * 2001-11-05 2006-06-01 Zycube Co., Ltd. Method of fabricating semiconductor device using low dielectric constant material film
US20070296002A1 (en) * 2006-06-27 2007-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contacts for MOS devices
US20140332749A1 (en) * 2013-05-08 2014-11-13 Sony Corporation Semiconductor device and method of manufacturing same
US20150069520A1 (en) * 2013-09-09 2015-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Backside Contacts for Integrated Circuit Devices

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10797139B2 (en) 2015-09-24 2020-10-06 Intel Corporation Methods of forming backside self-aligned vias and structures formed thereby
US11328951B2 (en) 2016-04-01 2022-05-10 Intel Corporation Transistor cells including a deep via lined wit h a dielectric material
US10872820B2 (en) 2016-08-26 2020-12-22 Intel Corporation Integrated circuit structures
EP3504738A4 (en) * 2016-08-26 2020-09-02 INTEL Corporation INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE SIDED MANUFACTURING TECHNIQUES
US11854894B2 (en) 2016-08-26 2023-12-26 Intel Corporation Integrated circuit device structures and double-sided electrical testing
US11869890B2 (en) 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US11869894B2 (en) 2018-03-05 2024-01-09 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
EP3579274A1 (en) * 2018-06-07 2019-12-11 INTEL Corporation Deep trench via for three-dimensional integrated circuit
US11373999B2 (en) 2018-06-07 2022-06-28 Intel Corporation Deep trench via for three-dimensional integrated circuit
US12100705B2 (en) 2018-06-07 2024-09-24 Intel Corporation Deep trench via for three-dimensional integrated circuit
US11688780B2 (en) 2019-03-22 2023-06-27 Intel Corporation Deep source and drain for transistor structures with back-side contact metallization
US11270991B1 (en) 2020-09-02 2022-03-08 Qualcomm Incorporated Integrated circuits (ICs) employing front side (FS) back end-of-line (BEOL) (FS-BEOL) input/output (I/O) routing and back side (BS) BEOL (BS-BEOL) power routing for current flow organization, and related methods
WO2022051028A1 (en) * 2020-09-02 2022-03-10 Qualcomm Incorporated Integrated circuit with front side beol i/o routing and back side beol power routing, and related methods
US12604481B2 (en) 2021-12-21 2026-04-14 Intel Corporation IC's with multple levels of embedded memory

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