WO2017043704A1 - Photodétecteur d'ultraviolets et son procédé de fabrication - Google Patents

Photodétecteur d'ultraviolets et son procédé de fabrication Download PDF

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Publication number
WO2017043704A1
WO2017043704A1 PCT/KR2015/013790 KR2015013790W WO2017043704A1 WO 2017043704 A1 WO2017043704 A1 WO 2017043704A1 KR 2015013790 W KR2015013790 W KR 2015013790W WO 2017043704 A1 WO2017043704 A1 WO 2017043704A1
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WO
WIPO (PCT)
Prior art keywords
bonding layer
layer
transparent conductive
ultraviolet
conductive layer
Prior art date
Application number
PCT/KR2015/013790
Other languages
English (en)
Korean (ko)
Inventor
김준동
파텔말케시쿠마르
김홍식
Original Assignee
인천대학교 산학협력단
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Publication of WO2017043704A1 publication Critical patent/WO2017043704A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type

Definitions

  • Another object of the present invention is to provide an ultraviolet photodetecting method with improved photoreaction rate.
  • FIG. 1 is a perspective view illustrating a ultraviolet photo detector according to an embodiment of the present invention.
  • 3 is an isometric view of a cubic unit cell for explaining the molecular structure of NiO of the present invention.
  • 13 to 15 are views for explaining the photoreaction at the reverse bias of the ultraviolet photo detector according to an embodiment of the present invention.
  • spatially relative terms below “, “ beneath “, “ lower”, “ above “, “ upper” It may be used to easily describe the correlation of a device or components with other devices or components. Spatially relative terms are to be understood as including terms in different directions of the device in use or operation in addition to the directions shown in the figures. For example, when flipping a device shown in the figure, a device described as “below or beneath” of another device may be placed “above” of another device. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be oriented in other directions as well, in which case spatially relative terms may be interpreted according to orientation.
  • Electrons are asymmetrically present in the substrate 100 and the transparent conductive layer 200 of the photo detector. In the thermal equilibrium, in the diode region formed by the junction of the transparent conductive layer 200 and the substrate 100, an imbalance of charge occurs due to diffusion due to the concentration gradient of the carrier, and thus an electric field is formed.
  • the transparent conductive layer 200 may transmit light, the non-reflected light may reach the substrate 100. Electrons excited by the reached light can easily migrate to the transparent conductive layer 200 due to the difference in resistivity in the substrate 100.
  • the first bonding layer 300 may include a metal oxide.
  • the first bonding layer 300 may include, for example, ZnO.
  • the first bonding layer 300 may have a first conductivity type. This may be a different conductivity type from the second bonding layer 400 described later.
  • the first conductivity type may be N type, but is not limited thereto.
  • FIG. 10 is a view for explaining a ultraviolet detection method of the ultraviolet photo detector according to an embodiment of the present invention.
  • NiO nanocrystals have a N A value of 4.6 x 10 18 cm -3 , which suppresses leakage current at the interface of neatly formed junctions, and can function as an excellent electron blocker in reverse bias operation.

Abstract

La présente invention a trait à un photodétecteur d'ultraviolets et à son procédé de fabrication. Le photodétecteur d'ultraviolets comprend : un substrat ; une couche conductrice transparente formée sur le substrat ; et une couche d'hétérojonction comprenant une première couche de jonction d'un premier type de conductivité, qui est formée sur la couche conductrice transparente, et une seconde couche de jonction d'un second type de conductivité, qui est différent du premier type de conductivité, la seconde couche de jonction constituant une hétérojonction avec la première couche de jonction.
PCT/KR2015/013790 2015-09-09 2015-12-16 Photodétecteur d'ultraviolets et son procédé de fabrication WO2017043704A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0127602 2015-09-09
KR20150127602 2015-09-09

Publications (1)

Publication Number Publication Date
WO2017043704A1 true WO2017043704A1 (fr) 2017-03-16

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Application Number Title Priority Date Filing Date
PCT/KR2015/013790 WO2017043704A1 (fr) 2015-09-09 2015-12-16 Photodétecteur d'ultraviolets et son procédé de fabrication

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107640793A (zh) * 2017-11-02 2018-01-30 上海纳米技术及应用国家工程研究中心有限公司 非连续双面异质结夹层结构二氧化锡‑氧化镍‑二氧化锡的制备方法及其产品和应用
KR101853588B1 (ko) 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992298B2 (en) * 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
US7400030B2 (en) * 2002-01-04 2008-07-15 Rutgers, The State University Of New Jersey Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992298B2 (en) * 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
US7400030B2 (en) * 2002-01-04 2008-07-15 Rutgers, The State University Of New Jersey Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KIM, JUN DONG: "Photoelectric Element using Transparent Electrode", ELECTRICAL AND ELECTRONIC MATERIALS., vol. 28, no. 9, 1 September 2015 (2015-09-01), pages 1 - 37 *
NEL, J. M. ET AL.: "Fabrication and Characterization of NiO/ZnO Structures", SENSORS AND ACTUATORS., vol. 100, 1 June 2004 (2004-06-01), pages 270 - 276, XP004509090, Retrieved from the Internet <URL:www.sciencedirect.com/science/article/pii/S0925400503009535> *
OHTA, HIROMICHI ET AL.: "UV-ditector based on Pn-heterojunction Diode Composed of Transparent Oxide Semiconductors , p-NiO/n-ZnO", THIN SOLID FILMS, vol. 445, 15 December 2013 (2013-12-15), pages 317 - 321, XP004479614, Retrieved from the Internet <URL:www.sciencedirect.com/science/article/pii/S0040609003011787> *
PATEL, MALKESHKUMAR ET AL.: "Nanoscale NiO for Transparent Solid State Devices", THE KOREAN VACUUM SOCIETY, JOURNAL OF THE KOREAN VACUUM SOCIETY, vol. 24, no. 2, 24 August 2015 (2015-08-24), pages 1 - 308 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101853588B1 (ko) 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법
CN107640793A (zh) * 2017-11-02 2018-01-30 上海纳米技术及应用国家工程研究中心有限公司 非连续双面异质结夹层结构二氧化锡‑氧化镍‑二氧化锡的制备方法及其产品和应用

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