WO2017034157A1 - Cmp slurry composition for organic film, preparation method therefor, and method for polishing organic film by using same - Google Patents

Abstract

The present invention relates to an organic film CMP slurry comprising an oxidant and a solvent. The organic film CMP slurry of the present invention has a ΔθW, of approximately 5-90°, which is the amount of change in water contact angle, represented by formula (1), and measured after a wafer, coated with an organic film and to be polished, is dipped in the CMP slurry for 10 hours.

Description

CPM slurry composition for organic films, its manufacturing method, and organic film polishing method using the same

The present invention relates to a CMP slurry composition for an organic film, a method for producing the same, and an organic film polishing method using the same. More specifically, the present invention relates to a CMP slurry composition suitable for polishing an organic film formed on the surface of an abrasive, such as a semiconductor wafer, a method for producing the same, and an organic film polishing method using the same.

As semiconductor devices have been highly integrated, formation of finer patterns, circuits of multilayer structures, and the like are required. Accordingly, a technique of using a hydrocarbon-based organic film that can be exclusively etched with an inorganic film such as a silicon oxide film or a silicon nitride film formed on a semiconductor has been developed. For example, a gap for forming an inorganic film such as a silicon oxide film or a silicon nitride film on a patterned silicon wafer, and then filling via-holes formed in the inorganic film with an organic film material by spin coating. Filling (gap-filling) processes are being applied. After such a gap-fill process, a planarization process of removing the excess organic film through a chemical mechanical polishing (CMP) process is performed.

However, most of the currently known CMP slurries are for polishing inorganic films such as copper interconnects, silicon nitride films, or silicon oxide films, and are not suitable for polishing organic films. This is because when the organic film is polished using the inorganic film CMP because the organic film is thinner than the inorganic film, the mechanical action of the abrasive particles is dispersed and the polishing hardly proceeds. On the other hand, when increasing the content or size of the abrasive particles to increase the amount of polishing, there is a problem that dishing phenomenon that is polished together with the inorganic film as well as the organic film occurs.

Korean Patent Publication No. 2007-0057009 discloses a technique of using polymer particles having functional groups on the surface of the CMP slurry instead of inorganic particles to solve the above problems. However, the CMP slurry using the polymer particles as the abrasive particles as described above has a problem in that a sufficient polishing amount cannot be obtained when polishing the organic film having a high film density or a high degree of curing.

In addition, since the organic film has various film qualities according to the film composition, it is necessary to provide CMP having an optimized composition according to the film qualities of the organic film to be polished. However, since the organic film is formed by reacting various compounds, it is difficult to predict polishing characteristics according to the composition of the CMP slurry unlike the inorganic film. Therefore, at present, a slurry having a specific composition is prepared, and then the wafer coated with the organic film to be actually polished is used, and then the film thickness and film characteristics are monitored to monitor the suitability of the composition. Development of CMP slurry for membranes is underway. However, the slurry development through the above method has a high cost and time input, there is a problem inefficient.

An object of the present invention is to provide a CMP slurry composition for organic membranes having an excellent polishing effect on organic membranes.

It is another object of the present invention to provide a method for preparing a CMP slurry composition for organic membranes that can provide optimized polishing properties for organic films to be polished in less time and cost.

Still another object of the present invention is to provide a method for polishing an organic film using the CMP slurry composition for organic films having an excellent polishing effect on the organic film.

In one aspect, the present invention provides a CMP slurry for an organic film comprising an oxidizing agent and a solvent to provide. In the CMP slurry for organic films according to the present invention, when the wafer coated with the organic film to be polished is immersed in the CMP slurry for about 10 hours, the change amount Δθ _W of the water contact angle represented by the following formula (1) is about 5 ° to About 90 °, specifically about 5 ° to about 70 °, more specifically about 10 ° to about 50 °.

Equation (1): change in male contact angle (Δθ _W ) = │θ ₁ -θ ₂ │

In Equation (1), θ ₁ is a water contact angle measured by dropping DI WATER on the surface of the organic film before immersing the organic film-coated wafer in a CMP slurry, and θ ₂ is the organic film coated It is a water contact angle measured by immersing the wafer in a CMP slurry for about 10 hours and then dropping DI water on the surface of the organic film.

The oxidizing agent is ^{Fe 3 +, Ce 4 +,} Ce 3 +, Cu 2 + , and can include one or more of Ag ^+, as required, may further include a hydrogen peroxide. Specifically, the oxidizing agent is Fe ³⁺ , Cu ^{2 +,} The Ce ^{3 +} or Ce ^{4 +} It may be one containing inclusive, or Ce ^{4 +,} Ce ^{3 +,} Cu ^{2 +,} and Ag ⁺ 1 mixture of types of metal ions and hydrogen peroxide or more of which.

The oxidizing agent may include a metal salt including Ce and hydrogen peroxide in a weight ratio of about 1: 1.5 to about 1: 3.

The oxidant may be included in about 0.001% to about 5% by weight based on the total weight of the CMP slurry composition.

In addition, the CMP slurry composition for organic films of the present invention may further include an abrasive comprising at least one of silica, alumina, ceria, titania, and zirconia. In this case, the abrasive may be included in about 0.01% to about 5% by weight based on the total weight of the CMP slurry composition.

In addition, the CMP slurry composition for organic membranes of the present invention has a contact angle with respect to cyclohexane represented by the following formula (2) when the wafer coated with the organic film to be polished is immersed in the CMP slurry for about 10 hours. The amount of change Δθ _n may be about 1 ° to about 50 °, specifically about 1 ° to about 20 °, more specifically about 1 ° to about 10 °.

Equation (2): change in contact angle (Δθ _n ) = │θ ₃ -θ ₄ │

In Equation (2), θ ₃ is a contact angle measured by dropping cyclohexane onto an organic film surface before immersing the organic film-coated wafer in a CMP slurry, and θ ₄ is a wafer coated with the organic film. After immersing in a CMP slurry for about 10 hours, the contact angle was measured by dropping cyclohexane on the surface of the organic film.

Meanwhile, the organic film to be polished may have a carbon content of about 50 wt% to about 95 wt%.

The CMP slurry composition for organic films has a polishing rate of about 500 kW / min to about 10,000 kW / min, specifically about 1000 kW / min to about 8000 kW / min, and more specifically about 1500 kW / min to the organic film. About 5000 mW / min.

In another aspect, the present invention provides a method for producing a CMP slurry for an organic film comprising a step of mixing an oxidant and a solvent, wherein the step of mixing the oxidant and the solvent is a wafer coated with an organic film to be subjected to the organic When the film is immersed in the CMP slurry for 10 hours, the change amount Δθ _W of the water contact angle represented by the above formula (1) is performed to be about 5 ° to about 90 °.

In another aspect, the present invention provides an organic film polishing method comprising the step of polishing the organic film using the CMP slurry composition for organic films according to the present invention described above.

The CMP slurry composition for organic membranes of the present invention has excellent polishing rate for organic films and provides optimized polishing properties for various organic films.

In addition, according to the method for preparing an organic film CMP slurry composition of the present invention, it is possible to produce a CMP slurry composition for an organic film having an optimized polishing properties for various organic films without a wafer polishing process.

1 is a schematic diagram of an organic film polishing method of an embodiment of the present invention.

Hereinafter, the present invention will be described in more detail.

For organic membrane CMP  Slurry composition

First, the CMP slurry composition for organic membranes of this invention is demonstrated.

The CMP slurry composition for organic membranes of the present invention comprises a solvent and an oxidizing agent, the amount of change in the water contact angle represented by the following formula (1) measured after immersing the wafer coated with the organic film to be polished in the CMP slurry for 10 hours Δθ _W is about 5 ° to about 90 °.

For example, the amount of change Δθ _W of the water contact angle represented by the following formula (1) measured after immersing the wafer coated with the organic film to be polished in the CMP slurry for 10 hours is about 5 °, 6 °, 7 °, 8 °, 9 °, 10 °, 11 °, 12 °, 13 °, 14 °, 15 °, 16 °, 17 °, 18 °, 19 °, 20 °, 21 °, 22 °, 23 °, 24 ° , 25 °, 26 °, 27 °, 28 °, 29 °, 30 °, 31 °, 32 °, 33 °, 34 °, 35 °, 36 °, 37 °, 38 °, 39 °, 40 °, 41 °, 42 °, 43 °, 44 °, 45 °, 46 °, 47 °, 48 °, 49 °, 50 °, 51 °, 52 °, 53 °, 54 °, 55 °, 56 °, 57 °, 58 °, 59 °, 60 °, 61 °, 62 °, 63 °, 64 °, 65 °, 66 °, 67 °, 68 °, 69 °, 70 °, 71 °, 72 °, 73 °, 74 ° , 75 °, 76 °, 77 °, 78 °, 79 °, 80 °, 81 °, 82 °, 83 °, 84 °, 85 °, 86 °, 87 °, 88 °, 89 ° or 90 ° have. Further, the change amount Δθ _W of the water contact angle may be in the range of at least one of the above values and at most one of the above values. Specifically, the change amount Δθ _W of the water contact angle is About 5 ° to about 70 °, more specifically about 10 ° to about 50 °.

Equation (1): change in water contact angle (Δθ _W ) = │θ ₁ -θ ₂ │

In Equation (1), θ ₁ is a water contact angle measured by dropping DI WATER on the surface of the organic film before immersing the organic film-coated wafer in a CMP slurry, and θ ₂ is the organic film coated It is a water contact angle measured by immersing the wafer in a CMP slurry for about 10 hours and then dropping DI water on the surface of the organic film.

As described above, since the organic film forms a film through various chemical reactions, the film structure is complicated and it is impossible to predict polishing properties in advance. However, the inventors have found out that, after diligent research, the amount of change in the water contact angle measured after immersing the wafer coated with the organic film to be polished in the CMP slurry composition correlates with the polishing property of the organic film.

Specifically, the amount of change in the water contact angle measured after immersing the object to be polished in the CMP slurry composition is about 5 ° to about 90 °, for example, about 5 ° to about 70 °, or about 10 ° to about 50 °. When it satisfies, it has excellent polishing performance with respect to the organic film to be polished. On the other hand, when the amount of change in the water contact angle was less than about 5 degrees or more than about 90 degrees, the polishing rate for the organic film was significantly lowered.

On the other hand, the organic film-coated wafer used in the water contact angle measurement may be prepared by coating an organic film on a silicon oxide wafer.

In this case, the silicon oxide wafer may be, for example, on a standard silicon wafer having a diameter of about 200 mm or about 300 mm, and a silicon oxide film having a thickness of about 2,000 to 12,000 mm 3 is uniformly within about 10% of the relative standard deviation with respect to the thickness. The wafer may be formed, but is not limited thereto.

The organic film-coated wafer may be manufactured by applying the composition for forming an organic film on the silicon oxide wafer as described above. In this case, the coating of the organic layer is not limited thereto, but may be performed through a multi-step process having different rotation rates. For example, the coating of the organic layer may be performed by applying a three-step spincoating process performed under the following conditions:

1st stage: about 1000rpm, about 2 seconds

Stage 2: about 1500 rpm, about 20 seconds

Step 3: about 1000 rpm, about 2 seconds

The rotary coating may be used general and standard equipment, such as MS-A200 from Mikasa. After the composition for forming an organic film is coated on the wafer in the same manner as described above, the organic film is cured by baking on a hot plate or the like. For example, the baking may be performed in air for about 2 minutes on a hot plate of about 400 degrees, and may be cooled by about 10 minutes at room temperature to form an organic film after baking. . Through the above process, the organic film having an average thickness of about 2,000 to 3,000 Å can be uniformly formed within about 5% of the relative standard deviation with respect to the thickness.

The relative standard deviation with respect to the average thickness and thickness of the organic film can be obtained by measuring a thickness of about 30 points at equal intervals along the diameter of the surface of the organic film coated wafer. In this case, the thickness at each point is obtained using a standard spectrometer such as K-MAC, but the calibration is performed based on the SEM image of the wafer cut surface. It should be within 5%.

Meanwhile, the water contact angle measurement is performed by cutting the entire organic film-coated wafer prepared by the above method or the wafer coated with the organic film into a size of about 2 cm or more and about 2 cm or more within the range of no damage to the organic film. It can be measured using the specimen. At this time, the measurement of the water contact angle should of course be applied to the surface coated with the organic film.

Next, the oxidizing agent is for oxidizing the surface layer of the organic film to facilitate polishing of the organic film, and to improve the planarization degree by making the surface of the organic film even.

The oxidizing agent used in the present invention may be one containing at least one of Fe ^{3 +} , Ce ^{4 +} , Ce ^{3 +} , Cu ^{2 +} and Ag ⁺ . For example, the oxidizing agent in terms of polishing rate Fe ^{3 +} , Cu ^{2 +,} Ce ^3+, and it may include at least one of Ce ^{+ 4.} Specifically, the oxidizing agent may be a metal salt including the metal ions as described above, for example, ceric ammonium nitrate, ceric sulfate, cupric chloride, cupric It may include at least one of cupric nitride, ferric nitride, ferric chloride, cerous nitrate, and silver nitrate. .

Meanwhile, the oxidant may further include hydrogen peroxide together with the metal ions. When hydrogen peroxide is additionally included in the oxidizing agent, there is an effect of further improving the polishing rate by improving the oxidizing power. For example, thereby but are not limited, the oxidizing agent may be one containing Ce ^{4 +,} Ce ^{3 +,} Cu ^{2 +,} and Ag ⁺ 1 mixture of types of metal ions and hydrogen peroxide or more of.

Meanwhile, the oxidizing agent may be about 0.001, 0.005, 0.01, 0.05, 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5 or 5% by weight based on the total weight of the CMP slurry composition. The oxidant may also be in the range of about one or more of the above values and about one or less of the above values relative to the total weight of the CMP slurry composition. Specifically, the oxidizing agent may be included in about 0.001 to about 5% by weight, for example about 0.01 to about 3% by weight, or about 0.05 to about 3% by weight relative to the total weight of the CMP slurry composition. When the content of the oxidant satisfies the above range, proper etching property to the organic film may be maintained.

The oxidizing agent may include a metal salt including Ce and hydrogen peroxide in a weight ratio of about 1: 1.5 to about 1: 3. In this range, the polishing rate is further improved.

Next, the solvent is to reduce the friction between the abrasive and the organic film when polishing the organic film, for example, water, ultrapure water, organic amine, organic alcohol, organic alcohol amine, organic ether, organic ketone, etc. Can be. The solvent may be included in the balance in the CMP slurry composition.

Next, the CMP slurry composition for organic films of the present invention may include an abrasive. In this case, the abrasive may be a metal oxide abrasive. The abrasive is intended to enable polishing of the organic film with a high polishing amount, and may include, for example, one or more of silica, alumina, ceria, titania, and zirconia. Specifically, the abrasive may include one or more of silica having excellent dispersion stability and ceria having an excellent polishing speed improving effect.

The abrasive may be spherical particles having an average particle diameter of about 10 to about 150 nm, for example, about 30 to about 70 nm. Within this range, it is possible to achieve a sufficient polishing rate with respect to the organic film to be polished of the present invention, prevent scratches from occurring, and increase flatness.

The abrasive may be about 0.01, 0.05, 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5 or 5 weight percent based on the total weight of the CMP slurry composition. In addition, the abrasive may range from about one or more of the above values and about one or less of the above values relative to the total weight of the CMP slurry composition. Specifically, the abrasive may be included in about 0.01 to about 5% by weight, for example about 0.01 to about 3% by weight based on the total weight of the CMP slurry composition. When the content of the abrasive satisfies the above range, it is possible to achieve a sufficient polishing rate with respect to the organic film to be polished of the present invention, prevent scratches from occurring, and excellent dispersion stability. Specifically, by increasing the average particle diameter of the abrasive, but lowering the content in the slurry composition, it is possible to implement an improved polishing rate for the organic film, a lower polishing rate for the inorganic film.

On the other hand, in the CMP slurry composition of the present invention, the mixing ratio of the abrasive and the oxidant is about 100: 1 to about 1: 500 by weight ratio, and specifically, the mixing ratio of the abrasive and the oxidant is about 10: 1 to about by weight ratio. 1: 100.

On the other hand, the CMP slurry composition of the present invention may be acidic. When the CMP slurry is acidic, the polishing selectivity of the organic film to the inorganic film is increased, and the polishing amount per unit time and the flatness of the polishing surface to the organic film are improved. Specifically, the CMP slurry composition of the present invention may have a pH of about 7 or less, specifically about 6 or less, more specifically about 1 to about 5. For example, by using a pH adjuster, the CMP slurry composition of one embodiment of the present invention can be adjusted to the pH in the above-described range. The pH adjusting agent may include at least one of an inorganic acid, such as nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid, and may include an organic acid, for example, an organic acid having a p K a value of about 5 or less, for example acetic acid, But may not include one or more of citric acid.

In addition, the CMP slurry composition according to the present invention may further include an additive. The additive is to assist physical properties of the CMP slurry, and may be, for example, an abrasive accelerator. By further including a polishing accelerator, the polishing rate for the inorganic film can be suppressed to increase the polishing selectivity for the inorganic film. The polishing promoter may include one or more of an organic acid, for example malic acid, citric acid, formic acid, glutaric acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, maleic acid, malonic acid. The polishing accelerator may be included in about 0.01% to about 1% by weight of the CMP slurry composition, and may have no adverse effect on the polishing rate, dispersion stability of the slurry, and surface characteristics of the organic carbon film in the above range.

On the other hand, the CMP slurry composition for organic films of the present invention, the amount of change in contact angle with respect to cyclohexane represented by the following formula (2) measured after immersing the wafer coated with the organic film to be polished in the CMP slurry for about 10 hours Δθ _n is approximately 1 °, 2 °, 3 °, 4 °, 5 °, 6 °, 7 °, 8 °, 9 °, 10 °, 11 °, 12 °, 13 °, 14 °, 15 °, 16 °, 17 °, 18 °, 19 °, 20 °, 21 °, 22 °, 23 °, 24 °, 25 °, 26 °, 27 °, 28 °, 29 °, 30 °, 31 °, 32 °, 33 °, 34 °, 35 °, 36 °, 37 °, 38 °, 39 °, 40 °, 41 °, 42 °, 43 °, 44 °, 45 °, 46 °, 47 °, 48 °, 49 ° Or 50 °. In addition, the change amount Δθ _n of the contact angle with respect to the cyclohexane may be in the range of at least one of the above values and at most one of the above values. For example, the amount of change Δθ _n of the contact angle with respect to cyclohexane may be about 1 ° to about 50 °, specifically about 1 ° to about 20 °, more specifically about 1 ° to about 10 °.

Equation (2): change in contact angle (Δθ _n ) = │ ₃ -θ ₄ │

In Equation (2), θ ₃ is a contact angle measured by dropping cyclohexane onto an organic film surface before immersing the organic film-coated wafer in a CMP slurry, and θ ₄ is a wafer coated with the organic film. Is a contact angle measured by dropping cyclohexane onto the surface of an organic film after immersing in a CMP slurry for about 10 hours. In this case, the wafer coated with the organic film used for measuring the contact angle is the same as that used for the above-described water contact angle measurement.

As described above, the CMP slurry composition for organic membranes of the present invention has a polishing rate of about 500 mW / min to about 10,000 mW / min, specifically about 1000 mW / min to about 8000 mW / min, more specifically about 1500 mW for the organic film. Very good from dl / min to about 5000 dl / min.

For organic membrane CMP  Method of Preparation Slurry Composition

The CMP slurry composition for an organic film according to the present invention may be prepared by mixing the oxidizing agent and a solvent, wherein the oxidizing agent and the solvent are mixed with the organic film coated wafer to be subjected to polishing to the CMP slurry for the organic film. When immersed for 10 hours, the change amount θ _W of the water contact angle represented by the above formula (1) is performed so that it is about 5 ° to about 90 °.

On the other hand, the step of mixing the oxidant and the solvent may further comprise the step of mixing the abrasive.

In addition, the mixing of the oxidant and the solvent may further include mixing an additive such as an abrasive promoter.

Specific examples and contents of the oxidizing agent, the solvent, the abrasive, and the additive are the same as those described above, and thus detailed description thereof will be omitted.

Organic membrane

Next, the organic film to be polished of the present invention will be described.

As used herein, "substituted" in "substituted or unsubstituted" means that at least one hydrogen atom of the functional group is a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, an amino group, a C1 to C30 alkyl group, a C2 to C30 alkenyl group , C2 to C30 alkynyl group, C3 to C30 cycloalkyl group, C3 to C30 cycloalkenyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C20 heteroalkyl group, C2 to C30 heterocycloalkyl group, C2 to C30 heterocyclo Alkenyl group, C2 to C30 heteroaryl group, C2 to C30 heteroarylalkyl group, C1 to C20 alkylamine group, C1 to C30 alkoxy group, C6 to C30 aryloxy group, C1 to C20 aldehyde group, C1 to C40 alkylether group, C7 To C20 arylalkylene ether group, C1 to C30 haloalkyl group, a functional group containing P, a functional group containing B, or a combination thereof.

In the present specification, the "functional group including P" may be represented by the following Chemical Formula A, and the "functional group including B" may be represented by the following Chemical Formula B:

<Formula A>

*-(O) _n- (CH ₂ ) _m -P (= O) (R ^a ) (R ^b )

<Formula B>

* -B (R ^c ) (R ^d )

In <Formula A> and <Formula B>, n is 0 or 1, m is an integer of 0 to 10, R ^a , R ^b , R ^c and R ^d are each independently hydrogen, hydroxyl, substituted or Unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C2 to C20 alkenyl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C1 to C20 haloalkyl group, substituted or unsubstituted C1 to C20 alkylsulfonate group, substituted or unsubstituted C1 to C20 alkylsulfonyl group, substituted or unsubstituted C2 to C20 alkylamide group, substituted or unsubstituted C3 to C20 alkyl ester group, substituted or Unsubstituted C2 to C20 cyanoalkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C6 to C30 arylalkyl group, substituted or unsubstituted or C6 to C30 aryloxy group, or R ^a and R ^b again R ^c and R ^d are connected to each other to form a heterocycloalkyl group of the substituted or unsubstituted C3 to C20 cycloalkyl group or a substituted or non-substituted of unsubstituted C3 to C20.

Specifically, the "functional group including P" is a functional group including P and O, for example, -OP (= O) (OH) ₂ , -P (= O) (OCH ₂ CH ₃ ) ₂ , Or -P (= 0) (C ₂ H ₄ C ₆ H ₅ ) (OCH ₂ CH ₃ ), etc., wherein the "functional group including B" is a functional group including B and O, for example,- B (OH) ₂ , -B (H) (CH ₃ ), or -B (CH ₂ CH ₃ ) ₂ , and the like.

On the other hand, the organic film has a carbon content of about 50 to about 95% by weight, specifically, 65 to 95% by weight or 70 to 92% by weight, for example, about 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94 or 95% by weight. When the carbon content of the organic film satisfies the above range, the polishing amount may be high during polishing, no scratches may occur, and the flatness of the polishing surface may also be high.

In addition, the organic film may have a film density of about 0.5 to about 2.5 g / cm ³ , specifically, about 1.0 to about 2.0 g / cm ³ or about 1.2 to about 1.6 g / cm ³ , for example about 0.5 , 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, or 2.5 g / cm ³ . When the film density of the organic film satisfies the above range, the polishing amount may be high during polishing, no scratch may occur, and the flatness of the polishing surface may be high.

In addition, the organic layer may have a hardness of about 0.4 GPa or more, specifically about 1.0 GPa or more, or about 1.3 GPa or more, for example, about 1.0 to about 1.5 GPa, for example, about 0.4, 0.5, 0.6, 0.7, It may be 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5 GPa. When the hardness of the organic layer satisfies the above range, the polishing amount may be high, the scratch may not occur, and the flatness of the polishing surface may be high.

In addition, the organic film to be polished of the present invention may have an acid value of about 0 mgKOH / g substantially. At this time, the "substantially" includes not only when the acid value is about 0mgKOH / g, but also a slight error is added or subtracted at about 0mgKOH / g. When the acid value of the organic film is substantially about 0 mgKOH / g, the polishing rate is further improved.

More specifically, the organic film to be polished of the present invention may be formed by a composition comprising a compound having a substituted or unsubstituted aromatic group, and more specifically a composition comprising a compound having a substituted or unsubstituted aromatic group. After application, it may be formed by thermal curing (baking) at a high temperature, for example, about 200 to about 400.

In the case of the organic film formed by using the composition containing the compound having a substituted or unsubstituted aromatic group as described above, since the aromatic group does not decompose even after thermal curing, it exhibits a high carbon content. In this case, the aromatic group may have a single ring structure having 6 to 100 carbon atoms, for example, 6 to 50 carbon atoms or a polycyclic structure in which two or more rings are fused. For example, the following Chemical Formula 1 It may include a compound represented by -1 to 1-26.

<Formula 1-1>

<Formula 1-2>

<Formula 1-3>

<Formula 1-4>

<Formula 1-5>

<Formula 1-6>

<Formula 1-7>

<Formula 1-8>

<Formula 1-9>

<Formula 1-10>

<Formula 1-11>

<Formula 1-12>

<Formula 1-13>

<Formula 1-14>

<Formula 1-15>

<Formula 1-16>

<Formula 1-17>

<Formula 1-18>

<Formula 1-19>

<Formula 1-20>

<Formula 1-21>

<Formula 1-22>

<Formula 1-23>

<Formula 1-24>

<Formula 1-25>

<Formula 1-26>

(In the above Chemical Formulas 1-1 to 1-26, Z ¹ to Z ¹⁸ are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted A substituted C2 to C20 alkynylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C3 to C20 cycloalkenylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group,-(C = O)-, -NR ^e- , -CR ^f R ^g- , oxygen (O), sulfur (S) or a combination thereof, wherein R ^e , R ^f and R ^g is each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C2 to C20 heteroarylene group, or a combination thereof)

Hereinafter, the composition for organic film formation containing the compound which has a substituted or unsubstituted aromatic group is demonstrated in detail.

In one embodiment, the composition for forming an organic layer may include a material having a unit represented by the following Formula 2 as a compound having a substituted or unsubstituted aromatic group:

<Formula 2>

In Formula 2, a is 1≤a <190, R ₁ is hydrogen, hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 To C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or Unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 To C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or unsubstituted C2 to C30 heteroarylalkyl group, substituted or unsubstituted C1 to C20 alkylamine group, substituted or Unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C1 to C30 heteroalkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted C1 to A C40 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, a functional group comprising P, a functional group including B, or a combination thereof,

R ₂ is hydrogen, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C20 aryloxy group, -NR ^h R ⁱ (where R ^h and R ⁱ Are independently substituted or unsubstituted C1 to C10 alkyl group or substituted or unsubstituted C6 to C10 aryl group), hydroxy group, halogen atom, allyl group, thionyl group, thiol group, cyano group, substituted or unsubstituted Substituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, Substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or unsubstituted C2 to C30 heteroarylalkyl group, substituted or unsubstituted C1 to C20 alkylamine group, substituted or unsubstituted C1 To C30 heteroalkoxy group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted C1 to C40 alkylether group, substituted or unsubstituted C7 to C20 arylalkylene ether group, substituted or unsubstituted C1 to C30 A haloalkyl group, a functional group comprising P, a functional group comprising B, or a combination thereof,

R ₃ is substituted or unsubstituted,

to be.

For example, R ₂ may be a substituted or unsubstituted C1 to C10 alkoxy group.

The material including Chemical Formula 2 may increase carbon content, film density, and hardness after thermal curing of the composition for forming an organic film, and refer to Korean Patent No. 10-0866015 for a more detailed manufacturing method thereof.

The composition of the first embodiment may further include at least one of a crosslinking component, an acid catalyst, and an organic solvent, in addition to the material containing the unit represented by Formula 2 above. Specifically, about 1 to about 20 wt% of the material represented by Formula 2, about 0.1 to about 5 wt% of the crosslinking component, about 0.001 to about 0.05 wt% of the acid catalyst, and about 75 to about 98.8 wt% of the organic solvent. Can be.

The crosslinking component may be a melamine resin (for example, N-methoxymethyl-melamine resin, N-butoxymethylmelamine resin), methylated or butylated urea resin, amino resin, glycoluril derivative represented by the following Chemical Formula 3, It may include one or more of the bisepoxy compound represented by the formula (4), the melamine derivative represented by the following formula (5):

<Formula 3>

<Formula 4>

<Formula 5>

The acid catalyst is composed of p-toluenesulfonic acid monohydrate, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate and eutechonic acid. It may include one or more of the alkyl esters.

The organic solvent is not particularly limited as long as it is an organic solvent having sufficient solubility in a compound having a substituted or unsubstituted aromatic group, and examples thereof include propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, and the like.

The composition for forming an organic film of the first embodiment is coated to a thickness of about 500 kPa to about 4,000 kPa, specifically about 2,000 to 3,000 kPa, and thermally cured at about 200 to about 400 for about 10 seconds to about 10 minutes to form an organic film. You can, but are not limited to this.

In a second embodiment, the composition for forming an organic film may include a compound represented by the following Chemical Formula 6 as a compound having a substituted or unsubstituted aromatic group:

<Formula 6>

In Formula 6, R ₄ to R ₉ and X ₁ to X ₆ are each independently hydrogen, a hydroxy group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, Substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, Substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or unsubstituted C2 to C30 heteroarylalkyl group, substituted or unsubstituted C1 C20 alkylamine group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C1 to C30 heteroalkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C1 to C20 aldehyde group, A substituted or unsubstituted C1 to C40 alkylether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, a functional group comprising P, a functional group including B or these N ₁ to n ₆ are each independently in a range of 0 to 2, and 2 ≦ n ₁ + n ₂ + n ₃ + n ₄ + n ₅ + n ₆ ≦ ₆ .

For example, R ₄ to R ₉ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It may be an unsubstituted C3 to C20 cycloalkenyl group, a functional group including P or a functional group including B.

For example, X ₁ to X ₆ may be each independently hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C20 alkylamine group, an amino group, a functional group including P, a functional group including B.

The composition for forming an organic film according to the second embodiment is a compound having a substituted or unsubstituted aromatic group, except that the material represented by the formula (6) instead of the material containing the unit represented by the formula (2) Is substantially the same as the composition for forming an organic film of the first embodiment. Therefore, hereinafter, only the substance represented by Chemical Formula 6 will be described.

The aromatic group compound of Chemical Formula 6 may have a weight average molecular weight of about 500 to about 4000, and may implement a thickness or good thin film of the organic film in the above range.

The material represented by Chemical Formula 6 may be prepared by a conventional method, for example, it may be prepared by reacting and reducing acetyl chloride, benzoyl chloride, naphthoyl chloride, cyclohexanecarbonyl chloride to coronene, but It is not limited. For more detailed manufacturing method refer to Korea Patent Registration No. 10-1311942.

When the organic film is formed using the composition for forming an organic film including the material represented by Chemical Formula 6, carbon content, film density, and hardness may be increased after thermosetting. In addition, the composition for forming an organic film including the material represented by Chemical Formula 6 includes an aromatic ring having strong absorption in a short wavelength region (for example, about 193 nm and about 248 nm), even though a special catalyst is not used. Since the crosslinking reaction proceeds at a temperature, it is possible to prevent contamination by catalysts, especially acids. Meanwhile, the composition for forming an organic film of the present invention may be represented by Chemical Formula 6, and may include a mixture of two or more compounds having different positions of substituents.

In a third embodiment, the composition for forming an organic film may include an aromatic group-containing polymer selected from (i), (ii) and (iii) as a compound having an unsubstituted or unsubstituted aromatic group:

(i) a compound comprising a unit represented by the following formula (7),

(ii) a mixture of a compound comprising a unit represented by the following formula (7) and a compound comprising a unit represented by the following formula (8),

(iii) A compound comprising a unit represented by the following formula (9).

<Formula 7>

<Formula 8>

<Formula 9>

(In the formulas 7 to 9, b, c, d and e are each independently 1 to 750, 2≤c + d <1500,

R ₁₀ is substituted or unsubstituted,

Wherein R is any substituted or unsubstituted C1 to C10 alkyl group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C3 to Cycloalkenyl group of C20),

R ₁₁ is hydrogen, a hydroxy group, a halogen atom, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or Unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C1 to C30 heterocycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkenyl group, substituted or unsubstituted C2 to C30 heteroaryl Groups, substituted or unsubstituted C2 to C30 heteroarylalkyl group, substituted or unsubstituted C1 to C20 alkylamine group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or Unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted C1 to C40 alkylether group, substituted or unsubstituted C7 to C20 arylalkylene ether group, substituted or unsubstituted A C1 to C30 haloalkyl group, a functional group including P, a functional group including B, or a combination thereof,

R ₁₂ and R ₁₄ are each independently substituted or unsubstituted,

Any one of

R ₁₃ is substituted or unsubstituted,

Wherein R is any substituted or unsubstituted C1 to C10 alkyl group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C3 to Cycloalkenyl group of C20),

R ₁₅ is substituted or unsubstituted,

Wherein R is any substituted or unsubstituted C1 to C10 alkyl group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C3 to C20 cycloalkyl group, substituted or unsubstituted C3 to Cycloalkenyl group of C20),

R in R ₁₀ , R ₁₃ and R ₁₅ are each independently hydrogen, hydroxy group, halogen atom, thionyl group, thiol group, cyano group, substituted or unsubstituted amino group, substituted or unsubstituted C1 to C30 alkyl group, substituted Or an unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C2 to C30 heterocycloalke Nyl group, substituted or unsubstituted C2 to C30 heteroaryl group, substituted or unsubstituted C2 to C30 heteroarylalkyl group, substituted or unsubstituted C1 to C20 alkylamine group, substituted or non- Substituted C1 to C30 alkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C1 to C20 aldehyde group, substituted or unsubstituted C1 to C40 alkylether group, substituted or unsubstituted C7 to C20 Arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, a functional group including P, a functional group including B, or a combination thereof.

The composition for forming an organic film according to the third embodiment is a compound having a substituted or unsubstituted aromatic group, except that the composition includes the aromatic group-containing polymer instead of the material including the unit represented by Formula 2 above. It is substantially the same as the composition for organic film formation of a specific example.

The aromatic group-containing polymer can increase carbon content, film density and hardness after thermosetting the composition for forming an organic film, and can be produced by a conventional method. For more details, refer to Korean Patent Registration No. 10-0908601.

In a fourth embodiment, the composition for forming an organic film is a compound having an unsubstituted or unsubstituted aromatic group material comprising a unit represented by the formula (2); A substance represented by Chemical Formula 6; It may contain two or more of the aromatic group-containing polymers selected from the above (i), (ii) and (iii). The composition for forming an organic film according to the fourth embodiment is substantially the same as the composition of the first embodiment, except for including two or more compounds having a substituted or unsubstituted aromatic group.

Organic membrane  Polishing method

Next, the organic film polishing method of the present invention will be described.

The organic film polishing method of the present invention includes the step of polishing the organic film using the organic film CMP slurry composition, wherein the organic film CMP slurry composition is the organic film CMP slurry composition of the present invention described above.

Referring to FIG. 1A, FIG. 1A illustrates a lamination state of a silicon wafer, an inorganic film, and an organic carbon film before polishing an organic film, and the silicon wafer 100 is intaglio patterned to be locally concave. An addition is formed. The inorganic film 110 is deposited on the silicon wafer 100, the organic carbon film 120 is coated on the inorganic film, and manufactured by thermal curing at about 200 to about 400. In FIG. 1A, T represents an imaginary polishing stop line. After applying the CMP slurry composition for the organic film of the present invention on the organic film of Figure 1 (a) and installing a polishing pad, the silicon wafer 100 is rotated and polished until it reaches the polishing stop line T of FIG. As shown in (b), a silicon wafer with an organic film polished can be obtained.

Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.

Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

Example

Production Example  One - Organic membrane  Formation composition

A 2000 ml three-necked flask equipped with a thermometer, a condenser, a mechanical stirrer, and a dropping funnel was prepared, and then immersed in an oil bath at 140 ° C. Heating and stirring by magnets were performed on a hotplate and the cooling water temperature of the condenser was fixed at 40 ° C. 220 g of 1 mol of 1-methoxypyrene was added to the reactor, and 138 g of 1.0 mol of 1,4-bismethoxymethylbenzene was added and then dissolved in 656 g of propylene glycol monomethyl ether acetate. Then 4.6 g of 0.03 mol of diethylsulfate were added. The temperature of the reactor was maintained at 130 ° C. During the polymerization, the molecular weight was measured at regular time intervals to determine the completion time of the reaction. At this time, the sample for measuring the molecular weight was prepared by diluting 1 g of the reactant, quenching to room temperature, 0.02 g of the sample was diluted to 4% by weight using tetrahydrofuran as a solvent. At the completion of the reaction, 0.03 mol of triethanolamine 4.48 g was added to the reactor as a neutralizing agent and terminated. The reaction was then slowly cooled to room temperature. The reaction was diluted with 500 g of propylene glycol monomethyl ether acetate. The solvent was then added to a 2000 ml separatory funnel. 4 kg of a methanol: ethylene glycol mixture in a 90:10 g / g ratio were prepared. The synthesized polymer solution was added dropwise to the alcohol mixture under vigorous stirring. The resulting polymer was collected at the bottom of the flask and the supernatant was stored separately. After removing the supernatant, methanol of the final reaction product was removed by rotary evaporation under reduced pressure for 10 minutes at 60 ℃.

The molecular weight and the dispersity of the obtained copolymer were measured by GPC under tetrahydrofuran, and as a result, a polymer containing a unit represented by the following formula (11) having a weight average molecular weight of 4000 dispersion of 2.3 was obtained.

<Formula 11>

(Average a = 11, Me is methyl group)

0.8 g of the polymer prepared above, 0.2 g of a crosslinking agent of Formula 4 (Powderlink 1174, Cytec Industries Inc) and 2 mg of pyridinium p-toluenesulfonate were dissolved in 9 g of propylene glycol monomethyl ether acetate, and then filtered to form an organic film. The composition was prepared.

Production Example  2 - Organic film  Coated wafer

The organic film-forming composition prepared according to Preparation Example 1 was formed on the surface of a silicon oxide wafer on which a silicon oxide film was formed on a silicon wafer having a diameter of 200 mm, using a MS-A200 manufactured by Mikasa for 2 seconds at 1000 rpm (1 step) and 20 at 1500 rpm. Second (stage 2), spin coating at 1000 rpm for 2 seconds (stage 3).

Then, baking in air on a 400 hot plate for 2 minutes and cooling for 10 minutes at room temperature, as a result, an organic film having an average thickness of 2300 Å uniformly formed within 5% of the relative standard deviation of the thickness. Then, the wafer was cut to a size of 2 cm in width and 10 cm in length to form a specimen.

Examples and Comparative Examples

A CMP slurry composition was prepared comprising ultra pure water and the components of Table 1 below.

CMP  Specification of each composition of slurry composition

(A) Oxidizer

(a1) Ceric ammonium oxide nitrate (Samsung Pure Chemical Co., Ltd.) was used.

(a2) Ceric sulfate (Acros) was used.

(a3) Cerus nitrate (Sigma-Aldrich) was used.

(a4) Couric nitrate (Great Gold Co., Ltd.) was used.

(a5) Coupric chloride (Samjeon Pure Chemical Co., Ltd.) was used.

(a6) Ferric nitrate (Samjeon Pure Chemical Co., Ltd.) was used.

(a7) Hydrogen peroxide (Dongwoo Finechem Co., Ltd.) was used.

(B) Abrasive: Colloidal ceria (Zenus) was used.

Property measurement method

Distilled water and apolar solvent were added dropwise to the organic membrane surface of the specimen prepared in Preparation Example 2 to measure the contact angle θ ₁ and the contact angle θ ₃ with respect to the nonpolar solvent before immersion. Then, the specimens were immersed in the CMP slurry compositions of Examples and Comparative Examples for 10 hours and then taken out and dried, and after immersion, the water contact angle θ ₂ and the contact angle θ ₄ for the nonpolar solvent were measured. The amount of change in water contact angle before and after dipping and the amount of change in contact angle of the nonpolar solvent were calculated.

In this case, the contact angle was measured by the angle between the tangent at the contact point of the drop of the solvent and the surface of the organic film and the surface of the organic film. The measurement results are shown in the following [Table 1].

In addition, in order to confirm the polishing properties of the CMP slurry compositions of Examples and Comparative Examples,

The organic film-coated wafer prepared in Preparation Example 2 was polished using the CMP slurry compositions of Examples and Comparative Examples.

FUJIBO's H0800 CMP pad was used as the polishing pad. Using Applied Materials (AMAT) 200mm MIRRA equipment, polishing was performed for 30 seconds at a lower pressure of 1.0 psi, a slurry flow rate of 200 mL / minute, platen speed of 60 rpm, and head speed of 55 rpm. The amount was measured using a Cay Mac thickness meter. The measurement results are shown in Table 1 below.

division		Example							Comparative example
		One	2	3	4	5	6	7	One	2
(A) Oxidizer	(a1)	0.05							0.05
	(a2)		0.05
	(a3)			0.05						0.05
	(a4)				0.01
	(a5)					0.01	0.02
	(a6)							0.6
	(a7)	0.1	0.1	0.1
(B) abrasive		0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05
Water contact angle change (°)		41	38	35	39	34	46	22	2	2
Nonpolar solvent contact angle change (°)		3.4	3.3	3.7	3.3	3.3	4.0	2.6	1.2	0.9
Polishing Speed (Å / min)		3900	3800	4000	3800	3700	4100	2200	1200	1000

Unit: weight%

Through Table 1, the CMP slurry of Examples 1 to 7 having a water contact angle change amount of 5 ° or more after immersing the wafer specimen in the CMP slurry, the polishing rate was significantly higher than that of the CMP slurry of Comparative Examples 1 to 2 It can be seen that excellent.

As described above in the present invention has been described by a limited embodiment, but this is only provided to help a more general understanding of the present invention, the present invention is not limited to the above embodiments, the present invention is not limited to the common knowledge Those having a variety of modifications and variations are possible from these descriptions.

Therefore, the spirit of the present invention should not be limited to the described embodiments, and all the things that are equivalent to or equivalent to the claims as well as the following claims will belong to the scope of the present invention. .

Claims (15)

1. CMP slurry for an organic film containing an oxidizing agent and a solvent,

   The CMP slurry for organic membranes having a change in water contact angle Δθ _W represented by the following equation (1) measured after immersing the wafer specimen coated with the organic film to be polished in the CMP slurry for about 10 hours is about 5 ° to about 90 °. :

   Equation (1): change in water contact angle (Δθ _W ) = │θ ₁ -θ ₂ │

   In Equation (1), θ ₁ is a water contact angle measured by dropping DI WATER on the surface of an organic film before immersing the organic film-coated wafer specimen in a CMP slurry, and θ ₂ is the coating of the organic film. It is a water contact angle measured by immersing the prepared wafer specimen in CMP slurry for about 10 hours and then dropping DI water on the surface of the organic film.
2. The method of claim 1,

   Wherein the oxidizing agent comprises at least one of Fe ^{3 +} , Ce ^{4 +} , Ce ^{3 +} , Cu ^{2 +} and Ag ⁺ CMP slurry composition for an organic film.
3. The method of claim 2,

   The oxidizing agent further comprises hydrogen peroxide CMP slurry composition for an organic film.
4. The method of claim 1,

   The oxidizing agent Fe ^{3 +} , Cu ^{2 +,} The Ce ^{3 +} or Ce ^{4 +} CMP slurry composition for organic membrane comprising.
5. The method of claim 1,

   Wherein the oxidant comprises a mixture of hydrogen peroxide and at least one metal ion of Ce ^{4 +} , Ce ^{3 +} , Cu ^{2 +} and Ag ⁺ CMP slurry composition for organic membranes.
6. The method of claim 1,

   The oxidizing agent comprises a metal salt containing Ce and hydrogen peroxide in a weight ratio of about 1: 1.5 to about 1: 3.
7. The method of claim 1,

   The oxidizing agent is contained in about 0.001 to about 5% by weight based on the total weight of the CMP slurry composition CMP slurry composition for organic films.
8. The method of claim 1,

   The organic film CMP slurry composition is an organic film CMP slurry composition further comprises an abrasive.
9. The method of claim 8,

   The abrasive is an organic film CMP slurry composition comprising at least one of silica, alumina, ceria, titania and zirconia.
10. The method of claim 8,

    Wherein the abrasive is present in an amount of about 0.01 wt% to about 5 wt% based on the total weight of the CMP slurry composition.
11. The method of claim 1,

    The change in contact angle Δθ _n with respect to cyclohexane represented by the following formula (2) measured after immersing the wafer coated with the organic film to be polished in the CMP slurry for about 10 hours is about 1 ° to about CMP slurry for organic films at 50 °:

    Equation (2): change in contact angle (Δθ _n ) = │ ₃ -θ ₄ │

    In Equation (2), θ ₃ is a contact angle measured by dropping cyclo hexane onto the surface of the organic film before immersing the organic film-coated wafer in a CMP slurry, and θ ₄ is the organic film coated The contact angle was measured by immersing the wafer in a CMP slurry for about 10 hours and then dropping cyclohexane on the surface of the organic film.
12. The method of claim 1,

    Wherein the organic film has a carbon content of about 50 wt% to about 95 wt%.
13. The method of claim 12,

    The CMP slurry composition for the organic film has a polishing rate for the organic film is about 500 to about 10000 dl / min CMP slurry composition.
14. Method for producing a CMP slurry for organic membrane comprising the step of mixing an oxidizing agent and a solvent,

    The step of mixing the oxidizing agent and the solvent, the amount of change of the water contact angle Δθ _W represented by the following equation (1) measured after immersing the wafer specimen coated with the organic film to be polished in the CMP slurry for the organic film for about 10 hours And about 5 ° to about 90 °.

    Equation (1): change in water contact angle (Δθ _W ) = │θ ₁ -θ ₂

    In Equation (1), θ ₁ is a water contact angle measured by dropping DI WATER on the surface of an organic film before immersing the organic film-coated wafer specimen in a CMP slurry, and θ ₂ is the coating of the organic film. It is a water contact angle measured by immersing the prepared wafer specimen in CMP slurry for about 10 hours and then dropping DI water on the surface of the organic film.
15. An organic film polishing method comprising polishing an organic film using the CMP slurry composition for organic films according to any one of claims 1 to 13.

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