WO2017026766A1 - Pérovskite ayant une meilleure stabilité à l'humidité et une meilleure photostabilité, et cellule solaire l'utilisant - Google Patents
Pérovskite ayant une meilleure stabilité à l'humidité et une meilleure photostabilité, et cellule solaire l'utilisant Download PDFInfo
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- WO2017026766A1 WO2017026766A1 PCT/KR2016/008710 KR2016008710W WO2017026766A1 WO 2017026766 A1 WO2017026766 A1 WO 2017026766A1 KR 2016008710 W KR2016008710 W KR 2016008710W WO 2017026766 A1 WO2017026766 A1 WO 2017026766A1
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- perovskite
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- solar cell
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- pbi
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical class OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000003072 pyrazolidinyl group Chemical group 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 125000006413 ring segment Chemical group 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Un mode de réalisation de la présente invention concerne un procédé de fabrication de cellule solaire de type pérovskite et une cellule solaire de type pérovskite comprenant une pérovskite. Le procédé de fabrication de cellule solaire de type pérovskite comprend l'étape consistant à former une couche de prévention de recombinaison sur une première électrode, une couche de pérovskite comprenant une pérovskite, une couche de transport de trous, et une seconde électrode, laquelle couche de pérovskite comprenant la pérovskite formée lors du procédé de fabrication de cellule solaire et laquelle pérovskite de la cellule solaire de type pérovskite ont la formule chimique (R)1-yAyMX3 et ont pour effet d'améliorer la stabilité à l'humidité et la photostabilté.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0111615 | 2015-08-07 | ||
| KR20150111615 | 2015-08-07 | ||
| KR10-2016-0011694 | 2016-01-29 | ||
| KR1020160011694A KR101715253B1 (ko) | 2015-08-07 | 2016-01-29 | 수분 및 광 안정성이 향상된 페로브스카이트 및 이를 이용한 태양전지 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017026766A1 true WO2017026766A1 (fr) | 2017-02-16 |
Family
ID=57984272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2016/008710 WO2017026766A1 (fr) | 2015-08-07 | 2016-08-08 | Pérovskite ayant une meilleure stabilité à l'humidité et une meilleure photostabilité, et cellule solaire l'utilisant |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2017026766A1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107464882A (zh) * | 2017-06-26 | 2017-12-12 | 中国科学院广州能源研究所 | 一种有机‑无机杂化钙钛矿太阳能电池及其制备方法 |
| CN108258127A (zh) * | 2018-01-10 | 2018-07-06 | 西安交通大学 | 一种喷涂制备钙钛矿纳米晶薄膜的方法 |
| CN108493266A (zh) * | 2018-03-29 | 2018-09-04 | 安徽三电光伏科技有限公司 | 一种太阳能硅片的丝网印刷工艺 |
| CN111403547A (zh) * | 2020-03-11 | 2020-07-10 | 武汉理工大学 | 一种钙钛矿太阳能电池及其制备方法 |
| CN113270552A (zh) * | 2021-05-27 | 2021-08-17 | 电子科技大学 | 一种基于2d-3d-2d吸光层的钙钛矿太阳能电池及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100132788A (ko) * | 2009-06-10 | 2010-12-20 | 동우 화인켐 주식회사 | 유기 태양 전지 및 그 제조방법 |
| KR20140003998A (ko) * | 2012-06-29 | 2014-01-10 | 성균관대학교산학협력단 | 페로브스카이트 기반 메조다공 박막 태양전지 제조 기술 |
| KR20140091488A (ko) * | 2013-01-10 | 2014-07-21 | 한국화학연구원 | 내구성과 고성능의 무유기 하이브리드 태양전지 |
| JP2015119102A (ja) * | 2013-12-19 | 2015-06-25 | アイシン精機株式会社 | ハイブリッド型太陽電池 |
-
2016
- 2016-08-08 WO PCT/KR2016/008710 patent/WO2017026766A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100132788A (ko) * | 2009-06-10 | 2010-12-20 | 동우 화인켐 주식회사 | 유기 태양 전지 및 그 제조방법 |
| KR20140003998A (ko) * | 2012-06-29 | 2014-01-10 | 성균관대학교산학협력단 | 페로브스카이트 기반 메조다공 박막 태양전지 제조 기술 |
| KR20140091488A (ko) * | 2013-01-10 | 2014-07-21 | 한국화학연구원 | 내구성과 고성능의 무유기 하이브리드 태양전지 |
| JP2015119102A (ja) * | 2013-12-19 | 2015-06-25 | アイシン精機株式会社 | ハイブリッド型太陽電池 |
Non-Patent Citations (1)
| Title |
|---|
| LEE, JIN - WOOK ET AL.: "High-Efficiency Perovskite Solar Cells Based on the Black Polymorph of HC(NH2)2PbI3", ADVANCED MATERIALS, vol. 26, no. 29, 13 June 2014 (2014-06-13), pages 4991 - 4998, XP055162818 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107464882A (zh) * | 2017-06-26 | 2017-12-12 | 中国科学院广州能源研究所 | 一种有机‑无机杂化钙钛矿太阳能电池及其制备方法 |
| CN108258127A (zh) * | 2018-01-10 | 2018-07-06 | 西安交通大学 | 一种喷涂制备钙钛矿纳米晶薄膜的方法 |
| CN108493266A (zh) * | 2018-03-29 | 2018-09-04 | 安徽三电光伏科技有限公司 | 一种太阳能硅片的丝网印刷工艺 |
| CN111403547A (zh) * | 2020-03-11 | 2020-07-10 | 武汉理工大学 | 一种钙钛矿太阳能电池及其制备方法 |
| CN113270552A (zh) * | 2021-05-27 | 2021-08-17 | 电子科技大学 | 一种基于2d-3d-2d吸光层的钙钛矿太阳能电池及其制备方法 |
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